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TW201251006A - Reduction of stored charge in the base region of a bipolar transistor to improve switching speed - Google Patents

Reduction of stored charge in the base region of a bipolar transistor to improve switching speed Download PDF

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TW201251006A
TW201251006A TW100147591A TW100147591A TW201251006A TW 201251006 A TW201251006 A TW 201251006A TW 100147591 A TW100147591 A TW 100147591A TW 100147591 A TW100147591 A TW 100147591A TW 201251006 A TW201251006 A TW 201251006A
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David Neil Casey
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Diodes Zetex Semiconductors Ltd
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    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04113—Modifications for accelerating switching without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
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Description

201251006 六、發明說明： 【發明所屬之技術領域】 特定實施例大致係關於達林頓電晶體組態。 本申請案主張於2010年12月20日申請之「具有中間基極 接觸之達林頓（Darlington with Intermediate Base Contact)」 之美國臨時申請案第61/424,956號之優先權，該案之内容 以引用的方式全部併入本文中。 【先前技術】 圖1展示一傳統佈局1〇〇。一基極接觸遮罩1〇2係放置於 一基極遮罩外緣104之内。射極遮罩外緣106係放置於距離 基極接觸遮罩102某一距離内。射極需要距離一基極接點 某一距離。該接點係放置於如藉由基極遮罩外緣1〇4界定 之外部基極區域内之一基極擴散之外部區域中β然而，在 後續處理期間’該外部基極邊緣明顯移動及接著湧出放置 該接點之區域之外。此區域不包含有用之特徵（諸如，一 射極擴散）甚至也不包含接點本身。然而，此「空」體積 儲存基極電荷以及貢獻於集極基極電容。問題在於：為自 「接通（ON)」狀態切換至「斷開（〇FF)」狀態，一電晶體 , 的驅動電路首先必須移除此儲存電荷》因此，此非所需體 積之存在添加了非所需儲存電荷，其使切換時間稍增加。 添加之電容亦具有一降級影響，但為一較小程度。 【發明内容】 在一實施例中，一種方法包含使用一基極遮罩形成用於 一電晶體之一基極區域及形成至該基極區域之一接觸區 161087.doc 201251006 域。該接觸區域係、形成於至少部分在該基之外之— 區域令。該方法接著在_擴散基極區域中形成—射極區 域。該基極區域向外擴散以形成於該接觸區域之下。 在另-實施例t ’ -種方法包含：放置用於一電晶體之 -基極區域之-基極遮罩；將至該基極區域之—接觸區域 之-接觸遮罩放置於至少部分在該基極遮罩之一邊緣之外 之一區域中；及將用於-射極區域之—射極遮罩放置於遠 離該接觸遮罩一經界定之距離處，其中在處理期間該基極 區域向外擴散以形成於該接觸區域之下。 下列詳細描述及附圖提供本發明之本質及優點之一更好 理解。 【實施方式】 本文描述用於將基極接點放置於一基極區域之外之一佈 局之技術。在下列描述中，出於解釋之目的，闡釋數種實 例及具體細節以提供本發明之實施例之全面理解。如藉由 申請專利範圍界定之特定實施例可單獨包含此等實例中的 一些特徵或所有特徵或結合下文所描述之其他特徵，且可 進一步包含本文所描述之特徵及概念之修改及等效物。 圖2及圖3描繪根據一實施例之將基極接點放置於一基極 區域之外之一佈局之一實例。圖3係圖2之一放大版本。該 佈局可為一電晶體的佈局，該電晶體可包含一雙極性接面 電晶體（例如’ PNP或NPN)或一金屬氧化物半導體場效應 電晶體（MOSFETp討論將描述一 BJT設計。可藉由一基極 遮罩界定基極區域。基極接點可放置於如藉由基極接觸遮 161087.doc • 4· 201251006 罩界疋之經界定基極區域之外。例如，頂面基極金屬化與 下伏石夕基極區域之間之外部接點可置於基極遮罩區域外。 在處理期間，該基極區域向外擴散以形成於該接觸區域之 下。此導致不包含一射極擴散之基極體積減少。此藉由減 少基極儲存電荷（而非減少基極電容）之一方式（儘管亦減少 基極電容）改良切換效能。包含射極之基極體積不累積儲 存之基極電荷^ 一電晶體之切換效能可取決於儲存於該電晶體之基極區 域中的電荷。可藉由移除實際上未被射極區域或支撐電場 所需之接點或區域佔據的任何基極區域而減少儲存電荷。 特定實施例藉由將接點完全或部分放置於一經界定基極區 域之外且放置於該基極區域之一側向擴散區域内而利用 (leverage)側向擴散。此允許射極以與接點向外移動相同的 量向外延伸，其填充先前已被基極接點佔據之基極區域。 此可減少射極至基極之距離（諸如減少75%)。在一實例 中’表面上之基極至射極之距離自4微米減少至1微米。 例如，參考圖2及圖3，於以304展示之一基極遮罩外緣 之外找到一基極接觸遮罩302。此外，一射極遮罩外緣3〇6 可放置於該基極區域中《可減少放置射極遮罩外緣3〇6處 至該基極遮罩邊緣304之距離。一射極可經移動為更接近 於該基極邊緣，此係因為該射極需要距離接點某一距離。 若該接點移動至該基極遮罩邊緣之外，則該射極可經移動 為更接近於該基極遮罩邊緣304。 在基極已擴散之後且在沈積一金屬層之前，該等接點可 161087.doc 201251006 摻雜或可轉雜有基極㈣㈣卜此具有改良該金屬與該 基極之間的接觸之優點β此可為用於—刪電晶體之一不 同程序，但熟習此項技術者將瞭解如何基於本文之揭示内 同及教示執行該程序。 藉由減少不包含射極之基極體積改良切換速度。切換效 能取決於儲存於此未佔據之基極區域_的電荷且藉由減少 此區域體積，（消散減少量之儲存電荷花費的時間對應地 減少）。 圖4描繪根據一實施例之在處理之後之一佈局之一實 例。展示在處理之後未移動之一基極接觸孔31〇。一基極 區域312已向外擴散且處於基極接觸孔31〇之區域中。一射 極邊緣314亦予以展示且係包含於基極區域312中。包含於 基極區域3 12中的射極擴散量增加，此係因為由於基極接 觸孔310向外移動而引起射極區域314向外移動。 圖5展示根據一實施例之來自圖3之一截面A-A。基極區 域312已向外擴散且處於基極接觸孔31〇之下。即使接觸遮 罩302係在基極遮罩外緣304之外，基極區域312亦已移動 至基極接觸孔310之下。射極區域314亦包含於基極區域 3 12中。相應地，特定實施例已利用基極區域3 12之外部擴 散以使基極接觸孔310向外移動，容許基極區域312更大面 積藉由射極區域314擴散。 如本文之描述及遍及下文之申請專利範圍中所使用，除 非上下文另外明確指示，否則「一（a)」、「一（an)」及「該 (the)」包含複數個參照。此外，如本文之描述及遍及下文 161087.doc 201251006 之申請專利範圍中所使用，除非上下文另外明確指示，否 則「在…中（in)」之意義包含「在…中（in)」及「在…上 (on)」。 上文之描述繪示本發明之各種實施例及可如何實施本發 明之態樣之實例。上文之實例及實施例不應視為唯一實施 例，且係經呈現以繪示如由下列申請專利範圍界定之本發 明之靈活性及優點。基於上文之揭示内容及下列申請專利 範圍，可在不脫離如由申請專利範圍界定之本發明之範疇 之情況下使用其他配置、實施例、實施方案及等效物》 【圖式簡單說明】 圖1展示一傳統佈局》 圖2及圖3描繪根據一實施例之將基極接點放置於一基極 區域之外之一佈局之一實例。 圖4描繪根據一實施例之在處理之後之一佈局之一實 例0 圖5展示根據一實施例之來自圖3之一截面A-A。 【主要元件符號說明】 102 基極接觸遮罩 104 基極遮罩外緣 106 射極遮罩外緣 302 基極接觸遮罩 304 基極遮罩外緣/基極遮罩邊緣 306 射極遮罩外緣 310 基極接觸孔 161087.doc 201251006 312 314 基極區域 射極區域/射極邊緣 161087.doc

Claims (1)

  1. 201251006 七、申請專利範圍： ι_ 一種方法’其包括： 使用一基極遮罩形成用於一電晶體之一基極區域； 形成至該基極區域之一接觸區域，其中該接觸區域係 形成於至少部分在該基極遮罩之外之一區域中；及 在一擴散基極區域中形成一射極區域，其中該基極區 域向外擴散以形成於該接觸區域之下。 2·如請求項1之方法，其中該基極區域於至少部分在該基 極遮罩之外之該區域中向外擴散。 3. 如請求項丨之方法，其中該射極區域係放置於遠離該接 觸區域一距離處，其中該距離為一經界定之臨限值。 4. 如請求項1之方法，其中一接觸遮罩為完全在該基極遮 5. 如請求項4之方法 觸遮罩一距離處， 6. 一種方法，其包括 ，其中一射極遮罩係放置於遠離該接 其中該距離為一經界定之臨限值。 —基極遮罩； 接觸遮罩放置於至 一區域中；及 置於遠離該接觸遮 間該基極區域向外 放置用於一電晶體之一基極區域之 將至該基極區域之一接觸區域之— 少部分在該基極遮罩之一邊緣之外之 將用於一射極區域之一射極遮罩放 罩一經界定之距離處，其中在處理期 擴散以形成於該接觸區域之下。 如請求項1之方法 之外。 其中該接觸遮罩為完全在該基極遮罩 161087.doc
TW100147591A 2010-12-20 2011-12-20 在雙極性電晶體之基極區域中減少儲存電荷以改良切換速度 TWI521694B (zh)

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US2011065907 2011-12-19
US13/330,340 US8623749B2 (en) 2010-12-20 2011-12-19 Reduction of stored charge in the base region of a bipolar transistor to improve switching speed

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US9245880B2 (en) * 2013-10-28 2016-01-26 Mosway Semiconductor Limited High voltage semiconductor power switching device

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US20120319768A1 (en) 2012-12-20
US20120322219A1 (en) 2012-12-20
CN103430310A (zh) 2013-12-04
WO2012085676A1 (en) 2012-06-28
EP2656387B1 (en) 2014-07-30
EP2656387A1 (en) 2013-10-30
US8623749B2 (en) 2014-01-07
TWI521694B (zh) 2016-02-11

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