201250756 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種使用多個帶電 ^^ ^ 电丁十子束的帶電粒子多 束*又備，S亥裝置包括用於多個帶電 m μ φ ^ , η 、子子束的一個或多 4子射束的操縱的操縱器裝置。例如 正在為了高產電子射束系統 電子m道 電子射束顯微鏡和多 電子射束誘導沉積裝置而開發。 本發明更具體涉及到一種使用在帶電粒 的操縱器裝置，以；5磁田认拍紅β 夕卞末6又備 個轉多個帶電粒子子束的-個或夕個帶電粒子子束的方法。 本發明進一步涉及到一種盔 李罐、一括“ 裡.，，、元卓帚電粒子多子束微影 —種帶電粒子多子束顯微鏡线種帶電粒子 多子束射束誘導沉積裝置。 ㈣電拉子 【先前技術】 使用多個子束而暴露目標的帶電粒子子束微影系 露於例如^测肪659〜中。㈣裝置包括 :二個偏轉器的偏轉裝置，其中該偏轉裝置包括多個記 ' 1母個單元提供了存儲元件並連接到偏轉器。存 田，2有放地作為局冑可用的放A器的控制訊號來使 供了到偏轉器的實f上數位的訊號1句話說， 益疋打開或是關閉。這對於獲取微影系統的圖荦步驟 的高精度和高晶圓產量是非常重要的一步。 5 201250756 【發明内容】 一 t發明的目的是提供—種操縱器裝置和-種包括這樣 :钿縱器裝置的帶電粒子多子束設備，其使得多個子束 的個別子束的操縱改善。 根據第一態樣’本發明提供了一種帶電粒子多子束設 =其包括用於在該帶電粒子多子束設備中的複數個帶電 ;署：束的自或多個的帶電粒子射束的操縱的操縱器裝 置，其中，該操縱器裝置包括： 平面基板，其包含在這基板的平面上的-陣列的通 :這些通孔的各者係配置以用於讓至少—個帶電粒子子 通過於此，纟中這些通孔的各者係與配置在該通孔周圍 =少兩對電極來提供，並且其中該至少兩對電極係配置 -亥基板中及/或上’其中該至少兩對電極的第一對係配置 以用於將至少-個帶電粒子子束偏轉於第一方向上，以及 其中該至少兩對電極的第二對係配置以用於將至少一個帶 電粒子子束偏轉於不同於第-方向的第二方向上，以及 電子控制電路’其用於提供個別可控制的電壓差至各 個通孔的至少兩對電極的各對電極。 藉由提供電壓差到第一對電極，靜電場在第一方向中 這個場可以用於影響及/或控制在帶電粒子子束中的 帶電粒子的轨跡。. 此外，或者，電壓差可以提供至第二對 從而在不同於第一方向的第二方向中產生靜電場。 月提供了 一基板，其具有一陣列的個別操縱器位在該基 反上’其中每個個別的操縱器包括具有至少兩對電極的通 6 201250756 孔，以為了能夠在不只一個方向中偏轉通過該通孔的子 束’特別是至少兩個方向，最好是正交的方向。 直到現在子束的個別的操縱，至少在帶電粒子光學列 中，其中多個子束源自於發出的帶電粒子射束的一個源， 該帶電粒子射束被分裂成多個子束，其被限制在用於個別 子束的實質上數位開啟或關閉切換的偏轉器陣列。為了改 善此點，在本發明的實施例中，電子控制電路被配置以用 於調整針對每個通孔的至少兩對電壓的每對電極的個別可 控制的電壓差。 在一實施例中，該個別可控制的電壓差是可變的電壓 差，其中该電子控制電路係配置以用於控制該可變的電壓 差的量及/或方向。在一實施例申，該可變的電壓差的量及/ 或方向是可針對各個通孔的至少兩對電極的各對電極個別 控制的。 本發明的帶電粒子多子束設備的操縱器裝置是能夠提 供對於每個個別通孔的電極的個別可調整的電壓控制。最 好地，電壓可以針對每個個別的通孔設置在各種不同位準 處’提供針對每個子束的個別調整控帝^。特別的是，電壓 或電壓差是針對每對電極或者甚至針對每個個別電極而可 個別調整的’在兩對以上的電極的每對上創造了這種可變 的電壓差’最好是在兩對以上的電極的每對上獨立地創造。 在一實施例中，該操縱器裝置係配置以用於該等複數 個子束的個別子束的聚焦、偏轉或像散。本發明改善的操 縱器裝置可用於多個子束的個別子束的操縱，不僅用於偏 7 201250756 轉個別子束，也用於其他功能，諸如子束的個別聚焦或個 別子束的像散校正，這將可從以下的實施例的描述中顯而 易見的。 在一實施例中，每個通孔係配置以用於提供一個單一 子束的通過。在另一種實施例中，每個通孔係配置以用於 提供數個子束的通過，例如，一組7χ7的子束。 在-實施例中’該電子控制電路係配置以用於提供可 調變的電壓到每個個別通孔的每個電極，最好是每個個別 通孔的至少兩對電極的每一對，最好是至少實質上類比的 可調變電壓》使用這種可調變的電壓，小校正可以對每個 子束執行’例如偏轉角校正、調整靜電透鏡的強度或提供 像散的校正以優化多個子束，最好能優化多個子束的每個 個別子束。 在一實施例中，該平面基板是晶圓，以及其令該電子 控制電路包括在該平面基板上的積體電路。在一實施例 中’該電子控制電路是至少部分地配置在兩個通孔中間。 適當地’控制電路係配置在具有至少兩對電極的實際通孔 附近。特別是在通孔之間，更特別的是在兩組通孔之間的 非射束區’這些皆為電子控制電路適當地配置。 在-實施例中，電子控制電路包括一用於存储控制一 個或多個個別的通孔的一個或多個電極的電壓的控制數據 之記憶體’其中該記憶體係配置在該平面基板上並且相鄰 於該些通孔。在進-步的實施例中，該記憶體係、配置以用 於存儲用⑤設置針對每個個別通孔的電壓的各種不同位準 8 201250756 的電壓之控制數據。 在一實施例中，記憶體係配置以用於存儲用於控制一 個個別通孔的一個或多個電極上的電壓的控制數據，該記 憶體被配置在平面基板上並且和相鄰於該個別的通孔。在 一實施例中，記憶體被配置在兩個通孔中間。 在一實施例中，一個或多個電極包括沉積在該平面基 板上的金屬。在一實施例中，該金屬包括鉬。雖然在晶圓 上沉積鉬的結構是一個艱難的製程，但是這是有利的，因 為匕的表面氧化物疋導電的，從而最小化由於電極的充電 所致的射束錯誤。 在一實施例中，至少兩對電極的電極係配置在基板中 及/或上。在一實施例中，通孔至少實質上橫向延長至該基 本的表面。 在一實施例中，該通孔的一個或多個電極是靠著面對 該通孔的牆的内部至少部分配置。在一實施例巾，該一個 或多個電極以一個方向延伸到該通孔，該方向實質上平行 該通孔的中心線。這些電極可以更準確的操縱在子束中的 帶電粒子以提供更均勻的靜電場。 在一實施例中，各個通孔的電極是至少實質上藉由接 地電極所包圍。在-實施例中，該接地電極包括沉積在該 平面基板上的金屬。在一實施例中，t亥金屬包括鉬。由於 個別通孔和他們的電極是相當緊密地配置，所以周圍的接 地電極至少減少了串擾，特別是在相鄰通孔之間。 在-實施例中，背離該平面基板的該至少兩對電極的 201250756 表面係配置成比背離該平面基板的接地電極的表面更接近 該平面基板。纟-實施例中，在該平面基板上的接地電極 的厚度大於在該平面基板上的至少兩對電極的厚度。在這 些實施例中，至少兩對電極被配置在與周圍的接地電極有 關的凹槽的位置處。在通孔處與一個或多個電極的位準有 關的周圍的接地電極的更高位準進一步降低任何在相鄰通 孔的一個或多個電極之間的串擾。此外，在通孔處與一個 或多個電極的位準有關的周圍的接地電極的更高位準降低 由於靜電的雜散場所致的射束錯誤。 在一實施例中，該電子控制電路包括用於以一個或多 個電極連接該電子控制電路的連接導線，其中該些連接線 的至少一個是至少部分配置在兩個接地導電層之間。在一 實施例中，該些連接導線的至少一個是至少部分配置在兩 個接地導線之間。藉由配置至少一些連接導線，至少部分 在導電層及/或導線之間，導線被屏蔽，從而減少在連接導 線之間的任何干擾。 在一實施例中，操縱器裝置包括一陣列的靜電透鏡， 其中每個靜電透鏡包括該陣列的通孔的一個通孔，其中每 個通孔包括配置在對應的通孔周遭的一個電極，以及其中 該電子控制電路被配置以用於將用於個別調整該透鏡的強 度的可調變的電壓來提供至該陣列的靜電透鏡的透鏡的每 個個別的電極的一個電極。 在一實施例中，操縱器裝置包括一陣列的靜電偏轉 器’其中每個靜電偏轉器包括該陣列的通孔的一個通孔， 10 201250756 其中每個通孔包括配置在對應的通孔周遭的兩個以上的電 極：以及其中該電子控制電路被配置以用於將用於個別調 整藉由該偏轉器所誘導的帶電粒子子束的偏轉量的可調變 的電壓來提供至該陣列的靜電偏轉器的偏轉器的每個個別 通孔的兩個以上的電極。 」-實施例中，該操縱器裝置包括一陣列的靜電散光 校正器’纟中各個靜電散光校正器包括該陣列的通孔的一 個通孔，以及其_該電子控制電路係配置以用於將用於個 別調整藉由散光校正器所誘發的帶電粒子子束的散光校正 的數量的可調整的電麼提供到該陣列的靜電散光校正器的 政光校正器的各個個別通孔的八個電極。 在一實施例令，該電子控制電路包括一用於從一多工 的訊號提取一個或多個個別的通孔的控制數據的解多工 器，《亥解多工器係配置在該平面基板上並且相鄰於該些通 孔。 在實施例中，該解多工器係配置以用於提取一個個 別的通孔的至少兩對電極的控制數據，該解多工器係配置 在該平面基板上並且相鄰於該個別的通孔。 在一實施例中，該解多工器係配置在相鄰的通孔中間。 在一實施例中，連接到該裝置的連接導線的數目實質 上小於電極的數目。在一實施例中，連接到通孔的連接導 線的數目小於該通孔的電極的數目。 在一實施例中，帶電粒子多子束設備進一步包括用於 確定该多個帶電粒子子束的至少一個特性的感測器，其中 11 201250756 該感測器連接到用於提供回饋的該電子控制電路。這樣的 回饋配置在多子束系統令是特別有利的，以為了使得針對 每個個別的通孔的一個或多個電壓的每個電壓的個別可調 變的電壓之自動的回饋’用於設定每個可調變的電壓到用 於獲得多俯帶電粒子子束的每個子束的所希望的校正之所 需求的值。 在-實施例中’該操縱器裝置是具有第一平面基板的 第-操縱器裝置，該第-平面基板包括在該第一平面基板 的平面中的一第一陣列的通孔，其中該帶電粒子子束裝置 包括具有第二平面基板的第二操縱器裝置，該第二平面基 板包括在該第二平面基板的平面中的一第二陣列的通孔， 其中每個通孔包括配置在對應的通孔周圍的一個或多個電 極’以及其中一個或多個電極係配置在該基板中及/或上’ 其中該第二平面基板係配置在一距離處並實質上平行該第 平面基板其十s玄第二陣列的通孔的每一通孔與該第一 陣列的通孔中的通孔實質上至少對齊。在一實施例中，該 通孔據有-半徑P以及其中在該等第—和第二平面基板之 間的距離d等於或小於半徑Γ。在一實施例中，該些第一和 第二操縱器裝置的一個或多個電極係分別配置在該些第一 泮第基板上，以及其中該第一基板上的一個或多個電極 和該第二基板上的一個或多個電極彼此相對。在一實施例 中5玄第一操縱器裝置是實質上至少鏡像對稱於該第一操 縱器裝置，至少與該些第一和第二操縱器裝置之間的中心 平面有關。 12 201250756 “根據第二態本發明提供了_種帶電粒子多子束無 光罩微影裝置’其包括如上所述的帶電粒子多子束設備。 <根據第三態樣，本發明提供了一種帶電粒子多子束檢 測設備用於量測包括如上所述的帶電粒子多子束設備 之個別子束的射束屬性。 人根據第四態樣，本發明提供了一種操縱器裝置，其適 合及/或意圖用於如上所述的帶電粒子多子束設備。 一據第五態樣，本發明提供了一種操縱帶電粒子多子束 無光罩微影裝置或者用&量測個別子束的射束屬性的帶電 粒子多子束檢測設備之一個或多個子束的方法，其使用如 上所述的帶電粒子多子束設備。 描述並顯示在說明書中的各個態樣和特徵是可以個別 地應：的，無論在哪種其況下皆可能的。這些個別的態樣， 特别是描述於所附加的巾請專利範圍所述的各個態樣和特 徵’可被做為分割專利申請的標的。 【實施方式】 多電子射束系統正在為了高產量微影、多電子射束顯 微鏡和多電子射束誘導沉積裝置而開發。尤其是針對微影 矛’儿積系、充，開啟或關閉切換的個別射束封鎖是用於圖案 化的使用。 J而匕也是有利於定位、聚焦、向量掃描和個別標 这子束。m至目前為止’沒有與定位、聚焦 '向量掃描和 “上有關的個別調整用於一個或多個帶電粒子子束的一 13 201250756 個或夕個帶電粒子射束的個別操縱之操縱器裳置 =ΤΓ是針對每個子束的個別控制所需的大量個別 二問題是每個操縱器的體積小，並且在相鄰操 縱益之間的間距小。 本發明提出了採用用於包括用於操縱多個帶電粒子子 束的-個或多個帶電粒子子束的操縱器陣 :右製造之购技術。取決於操縱器的目的，操縱器= 具有從約15〇微米至2微米的橫向大小。 敢 〜挑戰之一是設計具有晶片製造和電子光學設計規則兼 製造製程。此外，它是理想的控制數千射束而 無需具有數千的外部控制線路。 圖1顯示了基於無所有帶電粒子子束的共同交又的帶 Ζ粒子射束光學系統之帶電粒子多子束微影裝置⑽的示 』。這種微影系統包括帶電粒子源1(Η，例如電子源，用 =產生擴大的帶電粒子射束12〇。擴大的射束通過用於準直 帶電粒子射束120的準直透鏡1〇2。 隨後’準直射束120撞擊到孔徑陣列1〇4上，其阻止 用於創建次射束（suM)eam) 121的部分準直射束II次射 束⑵影響了用於創建子纟122的進一步孔徑陣列1〇5。聚 光透鏡陣列則或聚光透鏡陣列組）被列入以用於將次射 束121朝向在末端模'组107的射束停止陣们08中的對應 的開口聚焦。 子束創建孔徑陣列105的最好地是包括在子束抑制器 陣列106的組合中’例如在抑制器陣列106之前與孔徑陣 14 201250756 列105緊密配置。 如圖1所示，聚光透鏡103將次射束121聚焦在末端 模組1 07的射束停止陣列1 〇8中的相應的開口中或者朝向 其聚焦。在這個範例中，孔徑陣列i 〇5從次射束丨2丨產生 三個子束122，其撞擊在對應的開口處的射束停止陣列 1〇8，使得三個子束122藉由在末端模組1〇7中的投影鏡頭 系統109而投射到目標丨10上。在實踐中，具有更大量的 子束的一組子束可藉由孔徑陣列1〇5所產生以用於在末端 模組107中的每個投影鏡頭系統1〇9。在實際的實施例中， 通常約50個子束可直接通過單一投影鏡頭系統1〇9,這可 能會提高到兩百或更多。如冑！所*，子束抑制器陣列ι〇6 可能在某些時候偏轉在—組子束122中的個別子束以抑制 它們。這是藉由被抑制的子纟123來說明，其被偏離到開 口附近的射束停止陣列108的位置，但不在開口處。 根據本發明’帶電粒子光學列可以下面更詳細地描述 的個或夕個操縱器裝置來提供。這樣的操縱器裝置3〇〇 可配置在準直透鏡1 〇2之後： -在實質上垂直於帶電粒子光學列的光軸之平面中提 供偏轉，以校正用於帶電粒子光學列的一個或多 偏差，及/或 ^仏了藉由祕距透鏡（maCr〇SC〇piC lens)所造成的任 可像散光之校_通常是磁透鏡其衍射整個射束 =、所有的次測束121或所有的子束122，諸如準直透鏡 15 201250756 這樣的操縱器裝置310也可作為在投影鏡頭系統1〇9 中提供二維偏轉並且使得一組子束的向量掃描之部分末端 模塊107來提供。 知縱器裝置300、310被連接到電子控制電路43〇，其 提供了控制訊號433、434到操縱器裝置3〇〇、310。 此外，帶電粒子光學列係具有用於確定多個子束的至 少一個子束特性的感測器來提供，其中感測器4丨〇連接到 電子控制電路430以提供回饋訊號。這種感測器可置於射 束停止陣列108處，最好是當子束被抑制時置於子束指向 之處》另外一個感測器42〇可實質上配置在已處理的目標 和待處理的目標交換期間的目標11〇的位置。在此交換期 間，探測器420可以在子束下方移動χγ並且可以檢查子束 的對齊，以及視需要操縱器裝置3〇〇、31〇是基於藉由感測 器410、420所提供的回饋訊號431、432至電子控制電路 430 -最好自動地-調整。 值得注意的是，當與由子束抑制器陣列i 〇6的子束i 22 的偏轉相比，子束122的對齊之任何惡化及/或漂移發生在 非常緩慢的步卩。例如’在每次目標交換期間，使用感測 器410、420來檢查子束122並且控制電路43〇調整控制訊 號433、434以提供操縱器裝置300 ' 310的經校正的設定 至至少實質上校正一個或多個個別子束122的惡化/漂移。 隨後’在隨後的目標處理期間，操縱器裝置3〇〇、3 1〇的經 校正的設定係維持。 根據本發明的操縱器裝i 3〇〇、3 1〇的第一範例是部分 16 201250756 顯示在圖2和3。圖2顯示了多子束四極偏轉器丨，其使用 MEMS技術所製造。製造製程是雙極兼容，允許局部的電 子物件被納入，例如使得樣品和保持功能性。 多子束四極偏轉器丨包括實質上平面基板3，其具有在 行和列上週期地配置的一陣列的通孔2。通孔2實質上撗向 延伸到平面基板3的表面S，並且係配置以用於穿過至少一 個帶電粒子子束。 在平面基板3的頂部上，在這個範例是一個矽晶片， 電子控制電路4係配置。電子控制電路4包括已相鄰通孔2 而配置的積體電路，特別是在平面餘3的非射束區。在 電子控制電路4的頂部上，提供了絕緣層5,在絕緣層5的 頂部上’配置了電極層6。 每個通孔2係具有在基板3上通孔2周圍的四個電極7 來提供。具有各自的四個電# 7的每個通孔2形成了用於 操縱橫越通孔2的一個或多個子束之個別的操縱者1〇。因 此操縱益裝置1包括在行和列上配置的一陣列的個別 操縱器1 0。 電極7最好是由钥所製成’但是他們也可能由其他導 電材料所製成。電極層6約“微米厚，並且電極已經是 藉由使用反應離子刻蝕的鉬的各向異性刻蝕所製成。 值得注意的是，四個電極7藉由電極層6的剩餘部分8 所圍繞’如圖2的示音頂邱；j目国一 扪不蒽頂邛視圖所不。與電極7電氣隔離 的剩餘部分8是作為以—SB ife FS1 疋邗马以5巨離包圍四個電極7之接地電極 8。在電極層6下方，具有一 a紹络从 八,層絕緣材料5，其是以用於連 17 201250756 接在該層絕緣材料5下的每個電極7到電子控制電路4的 通路51來提供。 電子控制電路4提供控制訊號至每個通孔2的四個電 極7之每個電極。電子控制電路4被配置在平面基板3上， 以及至少部分相鄰於诵；f丨，，# Q v 、通孔2並且係配置以在使用時用於將 用於偏II個或多個代電粒子子束的個別可調變的電壓提 供至每個通孔2的四個雷极— 7 電極7的母個電極，橫越該開口 2。 因此操縱器裝置！的每個操縱器1〇可將用於個別調整藉由 偏轉器10所誘導的帶電粒子子束的偏轉的量之可調變的電 壓用於在平行於平面基板3的表面s的平面上的任何方向 上偏轉帶電粒子子束。 。圖4和圖5顯示了用於使.用在本發明的操縱器裝置中 11的第二範例。從本質上講，第二範例的操縱器 裝置包括如在圖2的分解視圖所示的裝置之相同的结構。 也就是說，該裝置包括實質上平面基板13，其以在行和列 :期地配置的一陣列通孔12所提供，如在圖4的頂部視圖 、不、通孔12係、配置以用於讓至少—個帶電粒子子束通 過並以在通孔12周圍的一個電極17所提供。 電子Ϊ =基板13的頂部表面上’配置電子控制電路14。 :::電路Η包括已配製程相鄰通孔12的積體電路。 在追個例中，電子控制電路14由具有整 數個層15所建立，其連接到通路… 子電路的 再者，在通孔12的邊緣處，提供了通路52， 連接到頂部電極17。通路52提供 ^門邛的頂部電 18 201250756 -極17的延伸。因此，通孔的電極17靠著面對該通孔的牆 的内部至少部分配置。在通孔12的邊緣處的通孔52在用 於製造積體電子控制電路14的同一時間被產生並且使用相 同的製程" 每個通孔12以具有在該基板13上的通孔12周圍配置 的一個電極17來提供。在平面基板13上方的一距離處， 配置進-步電極19。進一步電才亟19 &包括一陣列的通孔 12，其與基板13的通孔12對齊，如圖5的橫截面圖中所 不意顯不。具有各自的電極17和進一步電極19的每個通 孔12形成了㈣單透鏡u，其以用於個別調整聚焦距離或 透鏡11的強度的可調變的電壓來提供。 因此第二範例提供了操縱器裝置丨6包括一陣列的靜電 透鏡1卜其中每個靜電透鏡u包括該陣列的通孔的一個通 孔12 ’其中每個通孔12包括配置在對應的通孔12的周圍 的-個電極17，其中該電子控制電路14係配置以將用於個 別調整鏡頭U的強度的可調變的電壓用於提供該陣列的靜 電透鏡的透鏡1 1的每個個別通孔的一個電極12。 圖6顯示了本發明的操縱器裝置20的第三範例。從本 質上講，第三範例的操縱器裝置20包括如在圖2的分解視 圖所不的裝置之相同的結構。也就是說，該裝置包括實質 平面基板其以在行和列週期地配置的一陣列通孔丨2所 提供，如在圖6的頂部視圖所示。通孔。係配置以用於讓 至/個帶電粒子子束通過。每個通孔22係具有在通孔□ 周圍的八個電極27來提供。具有各自的八個電極27的每 19 201250756 個通孔12形成了個別的八極偏轉器，其以用於個別調整橫 越该通孔1 2之一者的子束的執跡的可調變的電壓來提供， 例如’提供用於每個個別子束的標註校正。 因此，第三範例的操縱器裝置2〇包括例如用於校正子 束的任何像散的一陣列的靜電標註校正21，其中每個靜電 標註校正21包括該陣列的通孔的一個通孔22，其中每個通 孔22包括配置在對應的通孔22周圍的八個電極27，其中 電子控制電路係配置以用於將用於個別調整藉由標註校正 器所誘導的|電粒子子束的才票f主校正的量提供於該陣列的 靜電標註校正的標註校正器21的每個個別通孔22的八個 電極27。 在本發明的裝置的進一步範例巾，如在@ 7的部分相 截面視圖所示，裝置31包括具有第一平面基板33的第一 操縱器裝置30,該第-平面基板33包括在該第一平面基相 33的平面中的一第一陣列的通孔32，其中每個通孔W自 括在相應通孔的32周圍配置的一個或多個電極37,其中一 或多個電極37被配置在基板33上。除此之外，裝置3 包括具有第二平面基板33’的第二操縱器裝置，該第二平面 板33包括在該第二平面基板的平面中的一第二陣列的 通孔32，其中每個通孔32,包括在相應通孔的32,周圍配置 的-個或多個電極37’，其中一個或多個電極37，被配置在 :板^3’上。第二平面基板33,以-距離d被配置並且實質 上平仃第—平面基板33,其中第二操縱器裝置30,的每個通 孔32,是與第一操縱器3〇的通孔“至少實質上對齊。在一 /:(、 20 201250756 實施例中’第-操縱器30和第二操縱器30,是形成為一個 單位。 通孔32、32’具有一半徑為r，並且在第一和第二平面 基板之間的距離d是適當地等於或小於半徑r。此外’第一 操縱器3〇和第—操縱器3 0 ’的—個或多個電極3 7、73，係配 置在第基板33和第二基板33,上，這樣的在第一基板33 上的_或多個電極37和在第二基板33,上的一個或多的 個電極37彼此相對。該第二操縱器裝置是實質上至少 鏡像對稱於該第-操縱器裝* 30，至少與該些第一操縱器 裝置30和第二操縱器裝置3〇,之間时心平面有關，以將 第操縱器裝置30的每個通孔32與第二操縱器裝置，的 對應的通孔32,結合。 每個第-操縱器裝置30和第二操縱器裝置3〇,可包括 具有針對每個通孔32、32，的兩個以上的電極37、^，卜 陣列的偏轉器’如在圖2和_ 3所示的四個電極，具有針 對每個通孔32、32,的電極37、37，之—陣列的靜電透鏡， 如圖4所示，及/或具有針對每個通孔32的八個電極η、 37’之一陣列的靜電標註校正器，如圖6所示。 回到如圖1所示的f電粒子多子束微影裝置⑽，值得 注意的是子束122為分組配置。由於—組子束122,在孔徑 陣列1〇4之後的帶電粒子光學列會被分成為射束區200和 非射束區210，如圖8 A所示音沪洽认 ^ 丁蒽描繪的，其中孔徑陣列1〇4 阻擋用於創建次射束121的部分進古以土 刀早直射束丨2〇。位於一組子 束之間的非射束區2 1 0，例如藉由 人射束121所定義，可以 21 201250756 用來作為控制配置在射束區200中的操縱器52〇的電子控 制電路510之位置，如圖8B所示意顯示的。在非射束區的 邊緣附近，連接器500係使用數據線而被提供，其連接到 用於在射束區200中的每個操縱器52〇的電子控制電路 51〇。來自每個電子控制電路51G之高壓線53()被導引至每 個操縱器520之個別電極以提供每個電極一個個別的 電壓》 在非射束區210的位置處，足夠的空間是可用於配置 用於存儲配置在相鄰的射束$ 2〇〇中的操縱器裝置的控制 數據之整合電子控制電路的記憶體裝置。尤其是記憶體係 配置以用於存料對每個個別操縱器52()而設定的各種不 同位準處的電壓之控制數據。 再者’解多工器係被配置在非射束區21G以用於解多 多數據Λ號和傳輸被解多工的數據到其之電子杵制 電路及/或存儲裝置。這樣的實施例實質上需要每個非-個 射束區2 0 1 —個數撼邋括 -. 據導線，其大大減少連接導線的數量。 發月的進步不範性實施例顯示在圖9。圖9顯示了 於：測個別子束的射束屬性的帶電粒子多子束檢測 橫截面圖°帶電粒子多子束檢㈣備包括入口 孔徑陣列1〇50,在使用中，其與一組子束mo對齊，使 得這些子束⑽進人檢測設備。«本發明，檢㈣，包 括一包含個別子束掘俠。。Λ 揉縱盗2、22的操縱器裝置3〇〇〇，例如 在圖2、3和6所千 m 、 於按照從控制器4300的控制訊號 4 3 3 0來個別偏轉—個 或多個的子束1220。在從操縱器裝置 Γ- 22 201250756 3 000的一側處，背離入 口孔往陣列1050並與操縱器裝置 3 000相距一距離，配番 衣夏 置了 —系‘列的感測器41〇〇、41〇1、42〇〇。 在這個範例中，兮么^ ^ 4糸列的感測器包括中央感測器 42 00，其包括法拉第权 币杯（Faraday cup)。當控制器43〇〇提 =制訊號侧到操縱器襄置删的個別子束操縱器以偏 轉所有t束1220到法拉第杯侧，帶電粒子子束mo的 總電流疋被測置的。、本知μ。η 去拉第杯4200的測量的測量訊號43 10 才日向控制器4300並可力祕 亚了在控制器4300中顯示、存儲及/或進 —步評估。 此外’中央感測器4200是由用於測量個別子束123〇 的射束屬性的多個感測器侧、41〇1所包圍。為了測量個 別子束1230的射束屬性，控制器43〇〇提供了控制訊號433〇 以將個別+纟1230偏轉到感測器之—41〇〇。在操縱器裝置 3000包括如圖2、3所示的個別偏轉器2的情況下，個別子 束1230可以在任何方向上偏轉並且在某一方向的偏轉量可 以個別地調整。因此，每個個別子束123〇可以被隨後指向 兩個以上的感測器41〇〇、4101以測量不同的射束屬性。例 如兩個以上的感測器4100、4101係配置以用於測量個別子 束1230的總電流，兩個以上的感測器41〇〇、41〇ι的第二 感測器係配置以用於測量第一射束剖面同時個別子束123〇 在第一感測器上方的第一方向上掃描，以及兩個以上的感 測器4100、4101的第三感測器係配置以用於測量第二射束 剖面同時個別子束123〇在第三感測器上方的實質上至少垂 直第一方向的第二方向上掃描。感測器4丨〇〇、4丨〇 1的測量 23 201250756 的測量讯號4320指向控制器4300並且可以在控制器43〇〇 上顯示、存儲及/或進一步評估。 這疋可以理解的，上面的描述被包括以說明最佳的實 施例的操作，並不意味著限制本發明的冑圍》從上面的討 論中’對於熟知本領域的技術人士來說，許多變化在沒有 超過由本發明的精神和範疇所涵蓋將是顯而易見的。 «丁、上所述，本發明涉及一種帶電粒子多子束設備，其 包括用於多個帶電粒子子束的一個或多個帶電粒子射束的 操縱的操縱器設備。操縱器裝置包括：平面基板，其包含 在這基板的平面上的一陣列的通孔，這些通孔的各者係配 置以用於讓至少—個帶電粒子子束通過於此，彡中這些通 孔的各者係與配置在該通孔周圍的一個或多個電極來提 供；以及電子控制電路，其用於提供控制訊號到各個通孔 的一個或多個電極’其中電子控制電路配置在該平面基板 上且至少部份部分相鄰於該些通孔，並且其中該電子控制 電路係配置㈣於提供可調的電壓至各個個別的通孔的一 個或多個電極。 【圖式簡單說明】 本發明將基於顯示於所附的@式中的示範性實施例為 基礎上來闡明： 圖"員示了帶電粒子多子束的無光罩微影系統的概要 橫截面圖， 圖2顯示了包含四極偏轉器陣列的操縱器裝置的第一201250756 VI. Description of the Invention: [Technical Field] The present invention relates to a multi-beam charged particle using a plurality of charged tens of electron beams, and the S-H device includes a plurality of charged m μ φ ^ , η , manipulated manipulator device of one or more 4 beamlets of a sub-beam. For example, it is being developed for high-product electron beam system electronic m-channel electron beam microscopy and multi-electron beam induced deposition devices. More particularly, the present invention relates to a manipulator device for use in charged particles, wherein: 5 magnetic field recognition of red beta 卞 6 6 and a plurality of charged particle beamlets - or a charged particle beamlet method. The invention further relates to a helmet and a can, and a multi-beam beam-induced deposition device for charged particles of a multi-beam lithography of a charged particle multi-beam beam microscope. Puller [Prior Art] A charged particle beamlet lithography system that exposes a target using a plurality of beamlets is exposed, for example, to a fat 659~. (4) The device includes: two deflector deflection devices, wherein the deflection device includes a plurality of Note that the 1 parent unit provides the storage element and is connected to the deflector. The storage field, 2 has the ground level as the control signal of the available A device, so that the signal of the real f on the deflector is given. In other words, it is a very important step for obtaining the high precision and high wafer yield of the lithography system. 5 201250756 [Summary] The purpose of the invention is to provide a manipulator. The apparatus and the like include: a charged particle multi-beamlet device of the escapement device that improves the manipulation of individual beamlets of the plurality of beamlets. According to a first aspect, the invention provides a charged particle multi-beamlet arrangement = comprising a plurality of electrified devices for use in the charged particle multi-beamlet device; a manipulation manipulator device of the beam of one or more charged particle beams, wherein the manipulator device comprises: a planar substrate, Included in the plane of the substrate - the passage of the array: each of the through holes is configured to pass at least one of the charged particles through, and each of the through holes is disposed in the Around the hole = less than two pairs of electrodes are provided, and wherein the at least two pairs of electrodes are configured in a substrate and/or in a top portion, wherein the first pair of electrodes of the at least two pairs of electrodes are configured for at least one charged particle The beam is deflected in a first direction, and wherein the second pair of the at least two pairs of electrodes are configured to deflect the at least one charged particle beamlet in a second direction different from the first direction, and the electronic control circuit Each pair of electrodes for providing an individually controllable voltage difference to at least two pairs of electrodes of each via. By providing a voltage difference to the first pair of electrodes, the field of the electrostatic field in the first direction can be used to influence and/or Controlled in live The trajectory of the charged particles in the sub-beams. In addition, alternatively, a voltage difference may be provided to the second pair to generate an electrostatic field in a second direction different from the first direction. The month provides a substrate having an array The individual manipulators are located on the base pair' each of which includes a pass 6 201250756 hole having at least two pairs of electrodes in order to be able to deflect the beamlets through the through hole in more than one direction 'especially at least Two directions, preferably orthogonal directions. Until now the individual manipulation of the beamlets, at least in the charged particle optical column, wherein the plurality of beamlets originate from a source of emitted charged particle beam, the charged particle beam The beam is split into a plurality of beamlets that are confined to a deflector array for substantially digital on or off switching of individual beamlets. To improve this, in an embodiment of the invention, the electronic control circuitry is configured to An individual controllable voltage difference is adjusted for each pair of electrodes of at least two pairs of voltages for each via. In one embodiment, the individually controllable voltage difference is a variable voltage difference, wherein the electronic control circuit is configured to control the amount and/or direction of the variable voltage difference. In one embodiment, the amount and/or direction of the variable voltage difference is individually controllable for each pair of electrodes of at least two pairs of electrodes of each via. The manipulator device of the charged particle multi-beamlet device of the present invention is an individually adjustable voltage control capable of providing electrodes for each individual via. Preferably, the voltage can be provided at each of the various vias at a variety of different levels to provide individual adjustments for each sub-beam. In particular, the voltage or voltage difference is individually adjustable for each pair of electrodes or even for each individual electrode. 'This variable voltage difference is created on each pair of two or more electrodes'. Each pair of two or more electrodes is independently created. In an embodiment, the manipulator device is configured for focusing, deflecting or astigmatizing the individual beamlets of the plurality of beamlets. The improved manipulator device of the present invention can be used for the manipulation of individual beamlets of multiple beamlets, not only for partial 7 201250756 individual beamlets, but also for other functions, such as individual focusing of beamlets or astigmatism correction of individual beamlets This will be apparent from the description of the embodiments below. In an embodiment, each via is configured to provide for the passage of a single beamlet. In another embodiment, each via is configured to provide for the passage of a plurality of beamlets, e.g., a set of 7-7 beamlets. In an embodiment, the electronic control circuit is configured to provide a variable voltage to each of the electrodes of each individual via, preferably each pair of at least two pairs of electrodes of each individual via, Preferably, at least substantially analogy of the variable voltage is used. With this variable voltage, a small correction can be performed on each beamlet, such as a deflection angle correction, adjusting the intensity of the electrostatic lens, or providing astigmatism correction to optimize multiple It is better to optimize each individual beamlet of multiple beamlets. In one embodiment, the planar substrate is a wafer and the integrated circuitry on the planar substrate is included in the electronic control circuitry. In an embodiment the electronic control circuit is at least partially disposed intermediate the two vias. Suitably the control circuitry is disposed adjacent the actual via having at least two pairs of electrodes. In particular, between the vias, and more particularly the non-beam regions between the two sets of vias, these are suitably configured for the electronic control circuitry. In an embodiment, the electronic control circuit includes a memory for storing control data for controlling a voltage of one or more electrodes of the one or more individual vias, wherein the memory system is disposed on the planar substrate and Adjacent to the through holes. In an advanced embodiment, the memory system is configured to store control data for the voltages of various different levels 8 201250756 for the voltage of each individual via. In one embodiment, the memory system is configured to store control data for controlling a voltage on one or more electrodes of an individual via, the memory being disposed on the planar substrate and adjacent to the individual Through hole. In one embodiment, the memory is disposed intermediate the two vias. In an embodiment, the one or more electrodes comprise a metal deposited on the planar substrate. In an embodiment, the metal comprises molybdenum. Although the deposition of molybdenum on the wafer is a difficult process, it is advantageous because the surface oxide of germanium is electrically conductive, thereby minimizing beam errors due to charging of the electrodes. In one embodiment, the electrode systems of at least two pairs of electrodes are disposed in and/or on the substrate. In an embodiment, the through hole extends at least substantially laterally to the substantially surface. In one embodiment, the one or more electrodes of the via are at least partially disposed against the interior of the wall facing the via. In one embodiment, the one or more electrodes extend in one direction to the through hole, the direction being substantially parallel to the centerline of the through hole. These electrodes can more accurately manipulate charged particles in the beamlets to provide a more uniform electrostatic field. In one embodiment, the electrodes of the respective vias are at least substantially surrounded by the ground electrodes. In an embodiment, the ground electrode comprises a metal deposited on the planar substrate. In an embodiment, the t-metal includes molybdenum. Since the individual vias and their electrodes are relatively closely spaced, the surrounding ground electrodes reduce crosstalk at least, especially between adjacent vias. In an embodiment, the 201250756 surface of the at least two pairs of electrodes facing away from the planar substrate is configured to be closer to the planar substrate than the surface of the ground electrode facing away from the planar substrate. In an embodiment, the thickness of the ground electrode on the planar substrate is greater than the thickness of at least two pairs of electrodes on the planar substrate. In these embodiments, at least two pairs of electrodes are disposed at locations of the recesses associated with the surrounding ground electrodes. The higher level of the surrounding ground electrode associated with the level of one or more electrodes at the via further reduces any crosstalk between one or more of the adjacent vias. In addition, the higher level of surrounding ground electrodes associated with the level of one or more electrodes at the vias reduces beam errors due to stray places of static electricity. In one embodiment, the electronic control circuit includes connection leads for connecting the electronic control circuit with one or more electrodes, wherein at least one of the connection lines is at least partially disposed between the two grounded conductive layers. In one embodiment, at least one of the connecting wires is at least partially disposed between the two ground wires. By arranging at least some of the connecting wires, at least partially between the conductive layers and/or the wires, the wires are shielded, thereby reducing any interference between the connecting wires. In an embodiment, the manipulator device includes an array of electrostatic lenses, wherein each electrostatic lens includes a through hole of the array of through holes, wherein each of the through holes includes an electrode disposed around the corresponding through hole, and Wherein the electronic control circuit is configured to provide a variable voltage for individually adjusting the intensity of the lens to one electrode of each individual electrode of the lens of the electrostatic lens of the array. In one embodiment, the manipulator device includes an array of electrostatic deflectors 'each of which includes a through hole of the array of through holes, 10 201250756 wherein each of the through holes includes a configuration disposed adjacent the corresponding through hole Two or more electrodes: and wherein the electronic control circuit is configured to provide an electrostatically variable voltage to the array for individually adjusting the adjustable amount of deflection of the charged particle beamlets induced by the deflector Two or more electrodes of each individual through hole of the deflector of the deflector. In an embodiment, the manipulator device includes an array of electrostatic astigmatism correctors, wherein each of the electrostatic astigmatism correctors includes a through hole of the array of through holes, and wherein the electronic control circuit is configured for The adjustable amount of the individual for adjusting the amount of astigmatism correction of the charged particle beamlets induced by the astigmatism corrector is provided to the eight electrodes of the respective individual vias of the electrostatic astigmatism corrector of the array. In an embodiment, the electronic control circuit includes a demultiplexer for extracting control data of one or more individual vias from a multiplexed signal, and the multiplexer is disposed on the planar substrate. Up and adjacent to the through holes. In an embodiment, the demultiplexer is configured to extract control data for at least two pairs of electrodes of an individual via, the demultiplexer being disposed on the planar substrate and adjacent to the individual pass hole. In an embodiment, the demultiplexer is disposed intermediate the adjacent vias. In one embodiment, the number of connecting wires connected to the device is substantially less than the number of electrodes. In an embodiment, the number of connection wires connected to the via holes is smaller than the number of electrodes of the via holes. In an embodiment, the charged particle multi-beamlet device further comprises a sensor for determining at least one characteristic of the plurality of charged particle beamlets, wherein 11 201250756 the sensor is coupled to the electronic control for providing feedback Circuit. Such a feedback configuration is particularly advantageous in multi-beamlet systems in order to enable automatic feedback of individually adjustable voltages for each voltage of one or more voltages for each individual via. Each of the tunable voltages is a desired value for obtaining a desired correction for each of the sub-beams of the multi-pitch charged particle beam. In an embodiment, the manipulator device is a first manipulator device having a first planar substrate, the first planar substrate comprising a first array of through holes in a plane of the first planar substrate, wherein the charging The particle beamlet device includes a second manipulator device having a second planar substrate, the second planar substrate including a second array of vias in a plane of the second planar substrate, wherein each via comprises a corresponding configuration One or more electrodes ' around the via hole and one or more of the electrode systems are disposed in the substrate and/or above' wherein the second planar substrate is disposed at a distance and substantially parallel to the first planar substrate Each via of the via of the ten s second array is substantially at least aligned with the via in the via of the first array. In one embodiment, the via has a radius -P and wherein the distance d between the first and second planar substrates is equal to or less than the radius Γ. In one embodiment, one or more electrode systems of the first and second manipulator devices are respectively disposed on the first plurality of substrates, and wherein the one or more electrodes on the first substrate and the One or more electrodes on the second substrate are opposite each other. In one embodiment, the fifth manipulator device is substantially at least mirror symmetrical to the first manipulator device, at least in relation to a center plane between the first and second manipulator devices. 12 201250756 "The invention provides a charged particle multi-beamlet reticle lithography apparatus according to the second aspect which comprises a charged particle multi-beamlet apparatus as described above. <According to a third aspect, the present invention provides a charged particle multi-beamlet detecting apparatus for measuring beam properties of individual sub-beams including charged particle multi-beamlet devices as described above. According to a fourth aspect, the present invention provides a manipulator device that is suitable and/or intended for use with a charged particle multi-beamlet device as described above. According to a fifth aspect, the present invention provides a multi-beamlet lithography apparatus for manipulating charged particles or one or more of charged particle multi-beamlet detection devices for measuring the beam properties of individual beamlets A method of beaming using a charged particle multi-beamlet device as described above. The various aspects and features described and illustrated in the specification are individually applicable, regardless of the circumstances. These individual aspects, particularly the various aspects and features described in the scope of the appended claims, may be taken as the subject of the divisional patent application. [Embodiment] Multi-electron beam systems are being developed for high-volume lithography, multi-electron beam microscopy, and multi-electron beam induced deposition devices. In particular, individual beam blocking for lithography spears, charging, switching on or off is used for patterning. J is also advantageous for positioning, focusing, vector scanning, and individual sub-beams. m to date, there are no individual controls for positioning, focusing 'vector scans and 'independent individual adjustments for one or more charged particle beamlets of a single 2012 50756 or a charged particle beam = ΤΓ is a large number of individual two problems required for individual control of each beamlet is that the volume of each manipulator is small and the spacing between adjacent manipulators is small. The invention proposes to be used for inclusion for manipulation Manipulator array of one or more charged particle beamlets of charged particle beamlets: right-hand-made technology. Manipulators = have lateral dimensions from about 15 μm to 2 μm depending on the purpose of the manipulator. One of the challenges is to design wafer fabrication and electro-optical design rules and manufacturing processes. In addition, it is ideal for controlling thousands of beams without the need for thousands of external control lines. Figure 1 shows the absence of all charged particle beamlets. A common image of a charged particle multi-beam lithography device (10) with a Ζ particle beam optical system. The lithography system includes a charged particle source 1 (Η, such as an electron source, used = An enlarged charged particle beam 12 产生 is produced. The enlarged beam passes through a collimating lens 1 〇 2 for collimating the charged particle beam 120. The subsequent 'collimation beam 120 strikes the aperture array 1 〇 4, which blocks The partial collimated beam II beam (2) for creating the secondary beam (suM) eam) 121 affects the further aperture array 1〇5 used to create the sub-122. The concentrating lens array or the concentrating lens array group is The inclusions are used to focus the secondary beam 121 toward the corresponding opening in the beam stop array 08 of the end mode group 107. The beamlet creation aperture array 105 is preferably included in the beamlet suppressor array 106. The combination is 'closed, for example, prior to the suppressor array 106, to the aperture array 14 201250756 column 105. As shown in Figure 1, the concentrating lens 103 focuses the secondary beam 121 at the beam stop array 1 of the end module 107. In or corresponding to the corresponding opening in 8. In this example, the aperture array i 〇 5 generates three sub-beams 122 from the secondary beam 丨 2 , which strike the beam stop array 1 〇 8 at the corresponding opening. So that the three beamlets 122 are in the end module 1〇7 The lens system 109 is projected onto the target pupil 10. In practice, a set of beamlets having a larger number of beamlets can be generated by the aperture array 1〇5 for each projection in the end module 107. Lens system 1〇9. In a practical embodiment, typically about 50 beamlets can pass directly through a single projection lens system 1〇9, which may increase to two hundred or more. For example, the beam stop suppressor The array 〇6 may deflect the individual beamlets in the group beam 122 at some point to suppress them. This is illustrated by the suppressed sub-123, which is offset from the beam stop array 108 near the opening. The location, but not at the opening. According to the present invention, the charged particle optics column can be provided as described in more detail below or in the case of a manipulator device. Such a manipulator device 3〇〇 can be arranged after the collimating lens 1 〇 2: - providing a deflection in a plane substantially perpendicular to the optical axis of the charged particle optical column to correct one or more of the charged particle optical columns Deviation, and / or 任 任 藉 藉 藉 藉 藉 藉 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The beamlet 122, such as the collimator device 310 of the collimating lens 15 201250756, can also be provided as part of the end module 107 that provides two-dimensional deflection in the projection lens system 1〇9 and that causes a vector scan of a set of beamlets. The senser devices 300, 310 are coupled to an electronic control circuit 43A that provides control signals 433, 434 to the manipulator devices 3, 310. In addition, the charged particle optical train is provided with a sensor for determining at least one beamlet characteristic of the plurality of beamlets, wherein the sensor 4 is coupled to the electronic control circuit 430 to provide a feedback signal. Such a sensor can be placed at the beam stop array 108, preferably where the beamlets are directed when the beamlets are suppressed. Another sensor 42 can be substantially configured for the processed target and to be processed. The target 11〇 position during the target exchange during processing. During this exchange, the detector 420 can move χ γ under the beamlets and can check the alignment of the beamlets, and the manipulator devices 3〇〇, 31〇 are based on the feedback signals provided by the sensors 410, 420 as needed. 431, 432 to electronic control circuit 430 - preferably automatically - adjusted. It is worth noting that any deterioration and/or drift of the alignment of the beamlets 122 occurs at a very slow pace when compared to the deflection of the beamlet i 22 by the beamlet suppressor array i 〇6. For example, during each target exchange, sensors 410, 420 are used to inspect beamlet 122 and control circuit 43 adjusts control signals 433, 434 to provide corrected settings of manipulator device 300' 310 to at least substantially correct Deterioration/drift of one or more individual beamlets 122. Subsequently, during subsequent target processing, the corrected settings of the manipulator devices 3〇〇, 3 1〇 are maintained. A first example of a manipulator mount i 3〇〇, 3 1〇 according to the present invention is a portion 16 201250756 shown in Figures 2 and 3. Figure 2 shows a multi-beam quadrupole deflector, which is fabricated using MEMS technology. The manufacturing process is bipolar compatible, allowing local electronic objects to be incorporated, for example, to make samples and maintain functionality. The multi-beam quadrupole deflector 丨 includes a substantially planar substrate 3 having an array of through holes 2 that are periodically arranged in rows and columns. The through hole 2 extends substantially diagonally to the surface S of the planar substrate 3 and is configured to pass through at least one charged particle beam. On top of the planar substrate 3, in this example is a germanium wafer, and the electronic control circuit 4 is configured. The electronic control circuit 4 includes an integrated circuit that has been disposed adjacent to the through hole 2, particularly in the non-beam region of the remaining plane. On the top of the electronic control circuit 4, an insulating layer 5 is provided, and on the top of the insulating layer 5, an electrode layer 6 is disposed. Each of the through holes 2 is provided with four electrodes 7 around the through holes 2 on the substrate 3. Each of the through holes 2 having the respective four electric wires 7 forms an individual operator 1 for manipulating one or more sub-beams that traverse the through holes 2. Thus, the operating device 1 includes an array of individual manipulators 10 arranged in rows and columns. The electrodes 7 are preferably made of a key 'but they may also be made of other electrically conductive materials. The electrode layer 6 is about "micron thick, and the electrode is already made by anisotropic etching of molybdenum using reactive ion etching. It is worth noting that the four electrodes 7 are surrounded by the remaining portion 8 of the electrode layer 6. Around the sound of the top of the figure as shown in Fig. 2; the head of the country is not the top view. The remaining part 8 electrically isolated from the electrode 7 is surrounded by four giants with the SB ife FS1 The ground electrode 8 of the electrode 7. Below the electrode layer 6, there is a layer of a layer of insulating material 5, which is used for connecting 17 201250756 to each electrode 7 under the layer of insulating material 5 to electronic control. The path 51 of the circuit 4 is provided. The electronic control circuit 4 provides a control signal to each of the four electrodes 7 of each of the vias 2. The electronic control circuit 4 is disposed on the planar substrate 3 and at least partially adjacent to the 诵;f丨,,# Q v , via 2 and are configured to provide a voltage for individual adjustment of the partial or multiple generation sub-beams to each via 2 in use. Four lightning poles - the parent electrode of the 7 electrode 7, traversing the opening 2. Therefore the manipulator device! Each manipulator 1 can use a variable voltage for individually adjusting the amount of deflection of the charged particle beamlets induced by the deflector 10 for any of the planes parallel to the surface s of the planar substrate 3. The charged particle beamlets are deflected in the direction. Figures 4 and 5 show a second example for use in the manipulator device 11 of the present invention. Essentially, the manipulator device of the second example includes The same structure of the device shown in the exploded view of Fig. 2. That is, the device includes a substantially planar substrate 13 provided by an array of vias 12 arranged in rows and columns, as in Figure 4. The top view, the no, the via 12, are configured to pass at least one charged particle beamlet and are provided by an electrode 17 around the via 12. Electron Ϊ = 'Electronics on the top surface of the substrate 13 Control circuit 14. The ::: circuit Η includes an integrated circuit that has been programmed to adjacent vias 12. In an example, electronic control circuit 14 is formed by having an integer number of layers 15 connected to the vias... Furthermore, at the edge of the through hole 12, a pass is provided. 52, connected to the top electrode 17. The via 52 provides an extension of the top of the gate 18 201250756 - the pole 17. Therefore, the electrode 17 of the via is at least partially disposed against the interior of the wall facing the via. The through holes 52 at the edges of 12 are produced at the same time for manufacturing the integrated electronic control circuit 14 and use the same process " each through hole 12 has one disposed around the through hole 12 on the substrate 13. The electrode 17 is provided. At a distance above the planar substrate 13, the step electrode 19 is disposed. Further, the electrode 19 includes an array of through holes 12 which are aligned with the through hole 12 of the substrate 13, as shown in FIG. The cross-sectional view is not intended to be obvious. Each of the through holes 12 having the respective electrodes 17 and further electrodes 19 forms a (iv) single lens u which is provided with a variable voltage for individually adjusting the focus distance or the intensity of the lens 11. The second example therefore provides that the manipulator device 6 includes an array of electrostatic lenses 1 each of which includes a through hole 12' of the array of through holes, wherein each of the through holes 12 includes a corresponding through hole An electrode 17 surrounding the 12, wherein the electronic control circuit 14 is configured to apply a variable voltage for individually adjusting the intensity of the lens U for each individual pass of the lens 11 of the electrostatic lens of the array. One electrode 12 of the hole. Figure 6 shows a third example of the manipulator device 20 of the present invention. Essentially, the manipulator device 20 of the third example includes the same structure as the device shown in the exploded view of Fig. 2. That is, the apparatus includes a substantially planar substrate that is provided by an array of vias 2 that are periodically arranged in rows and columns, as shown in the top view of FIG. Through hole. It is configured to pass through to a charged particle beamlet. Each of the through holes 22 is provided with eight electrodes 27 around the through holes □. Each 19 201250756 through holes 12 having respective eight electrodes 27 form an individual octopole deflector for individually adjusting the deflection of the sub-beams of one of the through-holes 1 2 The voltage is supplied, for example, to provide an annotation correction for each individual beamlet. Thus, the manipulator device 2 of the third example includes, for example, an array of electrostatic annotation corrections 21 for correcting any astigmatism of the beamlets, wherein each electrostatic annotation correction 21 includes a through hole 22 of the via of the array, Each of the through holes 22 includes eight electrodes 27 disposed around the corresponding through holes 22, wherein the electronic control circuit is configured for individually adjusting the electron beam beamlets induced by the labeling corrector The amount of the main correction of the ticket f is provided to the eight electrodes 27 of each individual through hole 22 of the label corrector 21 of the electrostatic annotation correction of the array. In a further exemplary embodiment of the apparatus of the present invention, as shown in the partial phase cross-sectional view of @7, the apparatus 31 includes a first manipulator device 30 having a first planar substrate 33, the first planar substrate 33 being included in the first a first array of vias 32 in the plane of the planar base phase 33, wherein each via W is from one or more electrodes 37 disposed about the respective via 32, wherein one or more of the electrodes 37 are configured On the substrate 33. In addition, the apparatus 3 includes a second manipulator device having a second planar substrate 33, the second planar plate 33 including a second array of through holes 32 in the plane of the second planar substrate, wherein each The through holes 32 include one or more electrodes 37' disposed around the respective through holes 32, and one or more of the electrodes 37 are disposed on the board 3'. The second planar substrate 33 is disposed at a distance d and substantially planar to the first planar substrate 33, wherein each of the through holes 32 of the second manipulator device 30 is a through hole with the first manipulator 3〇 At least substantially aligned. In a /: (, 20 201250756 embodiment 'the first manipulator 30 and the second manipulator 30 are formed as one unit. The through holes 32, 32' have a radius r, and in the The distance d between the first and second planar substrates is suitably equal to or smaller than the radius r. Further, the one or more electrodes 3, 73 of the 'first manipulator 3' and the first manipulator 30' are configured On the first substrate 33 and the second substrate 33, such _ or a plurality of electrodes 37 on the first substrate 33 and one or more electrodes 37 on the second substrate 33 are opposed to each other. The device device is substantially at least mirror-symmetrical to the first manipulator device 30, at least in relation to the first manipulator device 30 and the second manipulator device 3, between the heart planes to move the manipulator device Each of the through holes 32 of the 30 is coupled to a corresponding through hole 32 of the second manipulator device. Each of the first manipulator devices 30 and The second manipulator device 3A may include four or more electrodes 37, 32 for each of the through holes 32, 32, a deflector of the array, such as the four electrodes shown in Figures 2 and 3, having For each of the vias 32, 32, the electrodes 37, 37, the array of electrostatic lenses, as shown in Figure 4, and/or have an array of eight electrodes η, 37' for each via 32 Electrostatic labeling corrector, as shown in Figure 6. Returning to the f-electron multi-beamlet lithography apparatus (10) shown in Figure 1, it is worth noting that the beamlet 122 is a packet configuration. Because of the group beam 122, in the aperture The charged particle optical column after the array 1〇4 is divided into a beam region 200 and a non-beam region 210, as depicted in Fig. 8A, wherein the aperture array 1〇4 is blocked for The portion of the secondary beam 121 is created to be a direct beam 丨 2 〇. The non-beam region 2 1 0 between a set of beamlets, as defined by the human beam 121, can be used by 21 201250756 As the position of the electronic control circuit 510 that controls the manipulator 52A disposed in the beam region 200, as shown in Fig. 8B, the non-beam is shown. Near the edge, the connector 500 is provided using a data line that is connected to an electronic control circuit 51 for each manipulator 52A in the beam region 200. The high voltage line 53 from each electronic control circuit 51G. () is directed to the individual electrodes of each manipulator 520 to provide an individual voltage for each electrode." At the location of the non-beam region 210, sufficient space is available for configuration for storage configuration in adjacent shots. The control device of the manipulator device in the bundle $2〇〇 integrates the memory device of the electronic control circuit. In particular, the memory system is configured for storing various different levels of each individual manipulator 52(). Voltage control data. Further, the 'demultiplexer' is disposed in the non-beam area 21G for solving the multi-data nickname and transmitting the demultiplexed data to the electronic snubber circuit and/or the storage device. Such an embodiment essentially requires each non-beam region 2 0 1 - number to include -. According to the wire, it greatly reduces the number of connecting wires. An example of the progress of the moon is shown in Figure 9. Figure 9 shows a cross-sectional view of charged particle multi-beamlet detection for measuring the beam properties of individual beamlets. Charged particle multi-beam beam inspection (4) includes an inlet aperture array 1〇50, in use, with a set of sub- The bundles mo are aligned such that the beamlets (10) enter the detection device. «The invention, the inspection (four), includes a separate sub-gear. .操纵 The manipulator device 3 of the hack 2, 22, for example, thousands of meters in Figures 2, 3 and 6, and individually deflected one or more according to the control signal 4 3 3 0 of the controller 4300 Sub-beam 1220. At the side from the manipulator device Γ-22 201250756 3 000, away from the entrance hole to the array 1050 and a distance from the manipulator device 3 000, with the fan-cloth summer set--" column of sensors 41 〇〇 41〇1, 42〇〇. In this example, the sensor of the ^^4 array includes a central sensor 42 00, which includes a Faraday cup. When the controller 43 raises the individual beam manipulators from the signal side to the manipulator to offset all of the t-beams 1220 to the Faraday cup side, the total current 带 of the charged particle beamlets mo is measured. Know the μ. The measured measurement signal 43 10 of the η cup 4200 can be displayed to the controller 4300 and can be displayed, stored, and/or evaluated in the controller 4300. Further, the central sensor 4200 is surrounded by a plurality of sensor sides, 41〇1, for measuring the beam properties of the individual beamlets 123A. To measure the beam properties of the individual beamlets 1230, the controller 43 provides a control signal 433 偏转 to deflect the individual +纟 1230 to the sensor. In the case where the manipulator device 3000 includes the individual deflectors 2 as shown in Figures 2 and 3, the individual beamlets 1230 can be deflected in any direction and the amount of deflection in a certain direction can be individually adjusted. Thus, each individual beamlet 123 can be subsequently directed to more than two sensors 41, 4101 to measure different beam properties. For example, two or more sensors 4100, 4101 are configured to measure the total current of the individual beamlets 1230, and a second sensor system of two or more sensors 41, 41" is configured for Measuring the first beam profile while the individual beamlets 123 are scanned in a first direction above the first sensor, and the third sensor configurations of the two or more sensors 4100, 4101 are configured for measurement The two beam profile simultaneously scans the individual beamlets 123 in a second direction substantially at least perpendicular to the first direction above the third sensor. Measurements of the sensors 4丨〇〇, 4丨〇 1 The measurement signals 4320 of 201250756 are directed to the controller 4300 and can be displayed, stored and/or further evaluated on the controller 43A. It is to be understood that the above description is included to illustrate the operation of the preferred embodiments and is not intended to limit the scope of the invention. It will be apparent that there is no scope beyond the spirit and scope of the invention. The present invention relates to a charged particle multi-beamlet device comprising a manipulator device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets. The manipulator device includes: a planar substrate including an array of through holes in a plane of the substrate, each of the through holes being configured to pass at least one charged particle beamlet therethrough Each of the holes is provided with one or more electrodes disposed around the through hole; and an electronic control circuit for providing a control signal to the one or more electrodes of the respective through holes, wherein the electronic control circuit is disposed At least a portion of the planar substrate is adjacent to the vias, and wherein the electronic control circuitry is configured (4) to provide an adjustable voltage to the one or more electrodes of each individual via. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be elucidated on the basis of an exemplary embodiment shown in the attached @式: Figure "Summary cross-section of a maskless lithography system with charged particle multi-beamlets Figure 2 shows the first of a manipulator device comprising a quadrupole deflector array
24 201250756 範例的示意分解圖， 圖3顯不了圖i的四極原型的操縱器取置的頂部視圖， 圖4顯不了操縱器陣列的第二範例的頂部視圖，每個 包括使用在單鏡頭（Einzel Lens)陣列的一個電極， 圖―、員示了 一個使用在圖4的操縱器裝置中的操縱器 11的示意橫戴面圖， 圖6顯不了操縱器陣列的第三範例的頂部視圖，每個 操縱器包括用於形成八極的8個電極， 圖7顯不了使用在操縱器裝置中的操縱器的進一步範 例的示意橫截面圖， 圖8A顯不了使用在圖1的微影系統中的操縱器裝置的 斧意頂部視圖， 圖8B顯不了圖8A的示意頂部視圖的細節，示意地顯 斧了在非射束區中的電子控制電路，以及 圖9顯示了帶電粒子多子束檢查設備的示意橫截面圖。 【主要元件符號說明】 1 多子束四極偏轉器/操縱器裝置 2 通孔 3 平面基板 4 電子控制電路 5 絕緣層/絕緣材料 6 電極層 7 電極 25 201250756 8 接地電極 10 偏轉器/操縱器 11 操縱器 12 通孔 13 平面基板 14 電子控制 15 層 16 操縱器裝 17 電極 18 接地電極 19 電極 20 操縱器裝 21 靜電標註 22 通孔 27 電極 28 接地電極 30 第一操縱 30， 第二操縱 31 裝置 32 通孔 33 第一平面 33， 第二平面 37 電極 37， 電極 電路 置 置 校正/標註校正器 器裝置/第一操縱器 器裝置/第二操縱器 基板 基板 26 广 201250756 38 接地電極 38’ 接地電極 51 通路 52 通路 100 帶電粒子多子束微影裝置 101 帶電粒子源 102 準直透鏡 103 準直透鏡 104 孔徑陣列 105 孔徑陣列 106 子束抑制器陣列 107 末端模組 108 射束停止陣列 109 投影鏡頭系統 110 目標 120 準直射束 121 次射束 122 子束 123 被抑制的子束 200 射束區 210 非射束區 300 操縱器裝置 310 操縱器裝置 410 感測器 27 201250756 420 感 測 器 430 電 子 控 制 電 路 431 回 饋 訊 號 432 回 饋 訊 號 433 控 制 訊 號 434 控 制 訊 號 500 連接 器 5 10 電 子 控 制 電 路 520 操 縱 器 1050 入 口 孔 徑 陣 列 1220 子 束 1230 個 別 子 束 3000 個 別 子 束 4100 感 測 器 4101 感 測 器 4200 感 測 器 4300 控 制 器 4310 測 量 訊 號 4320 測 量 訊 號 4330 控 制 訊 號 2824 201250756 Schematic exploded view of the example, Figure 3 shows the top view of the manipulator's pick-up of the quadrupole prototype of Figure i, Figure 4 shows the top view of the second example of the manipulator array, each of which is used in a single lens (Einzel An electrode of the Lens array, the figure shows a schematic cross-sectional view of the manipulator 11 used in the manipulator device of Fig. 4, and Fig. 6 shows a top view of the third example of the manipulator array, each The manipulators include eight electrodes for forming eight poles. Figure 7 shows a schematic cross-sectional view of a further example of a manipulator used in a manipulator device. Figure 8A shows no use in the lithography system of Figure 1. Axial top view of the manipulator device, Figure 8B shows details of the schematic top view of Figure 8A, schematically shows the electronic control circuit in the non-beam region, and Figure 9 shows the charged particle multi-beam inspection device Schematic cross-sectional view. [Main component symbol description] 1 Multi-beam quadrupole deflector/manipulator device 2 Through hole 3 Planar substrate 4 Electronic control circuit 5 Insulation/insulation material 6 Electrode layer 7 Electrode 25 201250756 8 Ground electrode 10 Deflector/manipulator 11 Manipulator 12 Through Hole 13 Planar Substrate 14 Electronic Control 15 Layer 16 Manipulator Mount 17 Electrode 18 Ground Electrode 19 Electrode 20 Manipulator Mount 21 Electrostatic Label 22 Through Hole 27 Electrode 28 Ground Electrode 30 First Manipulation 30, Second Manipulation 31 Device 32 through hole 33 first plane 33, second plane 37 electrode 37, electrode circuit placement correction/labeling corrector device / first manipulator device / second manipulator substrate substrate 26 wide 201250756 38 ground electrode 38' ground electrode 51 path 52 path 100 charged particle multi-beam lithography device 101 charged particle source 102 collimating lens 103 collimating lens 104 aperture array 105 aperture array 106 beam suppressor array 107 end module 108 beam stop array 109 projection lens system 110 target 120 collimated beam 121 sub-beam 122 sub-beam 123 Suppressed beamlet 200 Beam region 210 Non-beam region 300 Manipulator device 310 Manipulator device 410 Sensor 27 201250756 420 Sensor 430 Electronic control circuit 431 Feedback signal 432 Feedback signal 433 Control signal 434 Control signal 500 Connection 5 10 electronic control circuit 520 manipulator 1050 inlet aperture array 1220 beam 1230 individual beam bundle 3000 individual beam bundle 4100 sensor 4101 sensor 4200 sensor 4300 controller 4310 measurement signal 4320 measurement signal 4330 control signal 28