201242085 3/UJltwt.doc/t 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光元件結構，且特別是一種發 光效率較佳的發光元件結構。 【先前技術】 近年來，由於發光二極體的發光效率不斷提升，使得 發光二極體在某些領域已漸漸取代日光燈與白熱燈泡，例 如需要高速反應的掃描器燈源、液晶顯示器的背光源或前 光源汽車的儀表板照明、交通號誌燈，以及一般的照明裝 置等。一般常見的發光二極體係使用氮化物之半導體材料 來形成，大多數如上所述之發光二極體係以磊晶方式形成 於藍寶石基板上。 傳統的發光二極體結構通常會包含一基板、一 N型下 偈限層（N type cladding layer)、一多重量子井結構(multiple quantum well structure)、一 P型上侷限層、一 N型電極及 一P型電極。N型下侷限層、多重量子井結構與p型上偈 限層依序配置於基板上，而N型電極及P型電極分別電性 連接N型下侷限層與p型上侷限層，其中施加驅動電壓於 N型電極及p型電極，便可驅動發光二極體結構發光。 一般來說，發光二極體結構被驅動而發光時，由於基 板與N型下侷限層的折射率相近，因此光線可被基板所反 射的角度與程度亦會有限，如此一來將會造成發光二極體 結構的光取出效率無法獲得提升。因此，如何在不增加成 4 201242085 37031twf.doc/t 本與改變材料的愔τ 有效地提升發:=二=由結構上的設計，進而可 之課題 、，，°構的光取出效率，實為一項重要 【發明内容】 本發明提供一種於杏分 率。 心先兀件結構，其具有較佳的發光效 本發明另提供—種發光 成上述的發光it件結構。I構的域方法’其可形 本發明的其他目的釦儡 術特徵中制進―步的了解° M從本發明所揭露的技 明之部份或全部目的或是其他目的，本發 貫施例^出-種發光 一蟲晶體。基板具mu苒^括基板以及 的_凸起部。這：劇間隔排列且凸起表面 =些_曲面與表面連接，且各轉曲面相對於表面的 對值隨著靠近基板的方向上遞m體配置於基 相配合而界定峨二;些弧形凸起部 弧形凸起部。_感間隙’其中各環形間隙環繞各 起邱2發明之—貫施财’蟲晶體實體連接這些弧形凸 ==局部區域’而蟲晶體與各弧形凸起部未實體連接並 ' 空隙的部分構成這些環形間隙。 在本發明之-實施例中，這些環形間隙佔據各弧形曲 201242085 j /vjiiwi.d〇c/t 面之表面積的比例實質上落在20%至80%之間。 在本發明之-實施例中，任二相鄰之這些弧形凸起部 的頂部之距離實質上落在1.5#„1至6#111之間。 在本發明之一實施例中，各弧形凸起部之寬 古 的比例實質上落在75%至200%之間。 又，、间又 在本發明之一實施例中，各弧形凸起部之高度實質上 落在1.4 // m至1.6 // m之間。 在本發明之一實施例中，基板包括一藍寶石（sapphire) 基板、一碳化矽(Sic)基板或一矽(Si)基板。 在本發明之一實施例中，磊晶體自基板向遠離基板的 方向上依序具有一第一型半導體層、一局部覆蓋第一型半 導體層的發光層及一覆蓋發光層的第二型半導體層。 在本發明之一實施例中，磊晶體的材質包括I[族及V 族元素之半導體化合物。 在本發明之一實施例中，第一型半導體層是一 n型半 導體層，而第二型半導體層是一 p型半導體層。 在本發明之一實施例中，發光元件結構更包含有一第 電極及一第二電極，其中第一電極形成在第一型半導體 層上，而第二電極形成在第二型半導體層上。 本發明之另一實施例提出一種形成發光元件結構的 才2，其至少包括下列步驟。首先，提供一基板，其中基 =具有一表面與複數個間隔排列且凸起表面的弧形凸起 面，而這些弧形凸起部分別具有與表面連接的一弧形曲 且各弧形曲面相對於表面的斜率絕對值隨著靠近基板 201242085 37031twf.doc/t 的方向上遞增。接著，形成一磊晶體於基板之表面與這些 弧形凸起部上，其中磊晶體與這些弧形凸起部相配合而界 定出複數個環形間隙，且各環形間隙環繞各弧形凸起部。 在本發明之一實施例中，形成磊晶體於基板的方法包 括下列步驟。首先，形成一第一型半導體層於基板上。之 後，形成一發光層於第一型半導體層上。接著，形成一第 二型半導體層於發光層上。 在本發明之一實施例中，形成第一型半導體層於基板 的方法包括依序於一第一時間内及一第二時間内將第一型 半導體層蟲晶於基板上，以使第一型半導體層與這些孤形 凸起部相配合而界定出這些環形間隙，其中於第一時間 内，縱向的蟲晶速度大於橫向的遙晶速度，而於第二時間 内’4¾向的蟲晶速度大於縱向的蟲晶速度。 在本發明之一實施例中，形成發光元件結構的方法更 包括形成一第一電極於第一型半導體層上，以及形成一第 二電極形成在第二型半導體層上。 基於上述’本發明之發光元件結構藉由將磊晶體形成 於圖案化基板上’其中圖案化基板具有複數個間隔排列且 ^起表面的弧形凸起部，因此便可藉由控制磊晶過程中之 検向磊晶速度與縱向磊晶速度，使磊晶體實體連接這些弧 形凸=部之局部區域，而未實體連接並補空隙的部分則 形成來繞弧形凸起部的環形随。如此，當發光元件結構 被驅動而於内部產生光時，便很容易會被環形間隙所反 射’而可提高發光元件結構的光取出率。 201242085 —為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如^。 【實施方式】 有關本發明之前述及其他技術内容、特點盥 :乂下配合參考圖式之一較佳實施例的詳細說寺:二j 楚的呈現。以下實施例中所提到的方向用語，例如：上、 下、左、右、前或後等，僅是參考附加圖式的方向。因此， 使用的方向用語是用來說明並非用來限制本發明。 圖1A為本發明一實施例之發光元件結構的 圖，圖m為圖1A所繪示之發光元件結構的局部上視^不 其中為了方便制’ ® 1B麟示出基板及位於基板上之 環形間隙之技術特徵，而省略其他位於基板上之 心 同時參考圖1A與圖1B，本實施例之發光元件結構；^ 括一基板110以及一磊晶體120。基板11〇具有一表面U2 與複數個間隔排列且凸起表面112的弧形凸起部114。 別的是，這些弧形凸起部114分別具有一弧形曲面8卜复 中這些弧形曲面S1與表面112連接，且各弧形曲面S1相 對於表© 112的斜率絕對值隨著靠近基板11〇的方向 增。具體而言，這些弧形凸起部114例如是以一砲彈形 之凸起部，但不限於此，其亦可為半球形之曲率、擴圓 之曲率、雙曲線之曲率或是其他可能的光滑連續之曲面， 此部份可視乎各弧形凸起部114之寬度d2與高度m 你I而京。 8 201242085 37031twf.doc/t 舉例來說，弧形凸起部114 ^ 值越來越大，贼纽料 U與高度H1的比 較平緩；相對地，若弧形凸起部’意即 的比值越來越小，則代表弧 寬度（12與咼度Hl 意即較陡山肖。因此，這此二=S1之斜率變化會較大， 求與設計而定’上述僅為舉例說明部者的需 部114的頂部ιΐ4=:實= d2與高度H1的比例實質上可落在 分視乎使用者所採狀 丨4之寬度d2與高度H1的比值而定。 弓瓜开’蟲晶體120配置於基板110之表面112與這些 U4上，如圖1Α所繪示。具體而言，磊晶體 隙lioH瓜形成凸起部114相配合而界定出複數個環形間 ^ 、中各環形間隙130環繞各狐形凸起部114，如圖 圖1B所示。在本實施例中，環繞各弧形凸起部⑴ 130^2間隙I30例如是一環形封閉間隙，其中此環形間隙 的形成方式係可於磊晶體12〇形成於基板11〇的過程 之糟由控制橫向磊晶速度與縱向磊晶速度之不同而形成 中其中關於環形間隙13〇的詳細形成方式將於後續段落 ^仃說明。換言之，形成於基板11〇上的磊晶體120會 與連接這些狐形凸起部114之局部區域，且蟲晶體12〇 /、各弧形凸起部114未實體連接並保持一空隙的部分便會 201242085 J/U3itwt.doc/t 構成如圖1A與圖IB所繪示的環形間隙130。 在本實施例中，磊晶體120自基板no向遠離基板110 的方向上依序具有一第一型半導體層122、一局部覆蓋第 一型半導體層122的發光層124及一覆蓋發光層124的第 二型半導體層126，其中第一型半導體層122可以是一 n 型半導體層，第二型半導體層126可以是一 ρ型半導體層， 而發光層124可以是多重量子井層。 另外，磊晶體120的材質可以是選用π[族及ν族元素 之半導體化合物，因此第一型半導體層122與第二型半導 體層126的材質可以選用二元化合物(binary comp〇und)， 如：氮化鎵、氮化鋁、化銦；三元化合物（ternary compound)，如：氮化鋁鎵、氮化鎵銦、氮化鋁銦、砷化 紹鎵、珅化銦鎵；及四元化合物(qUaternary c〇mp〇und)，如： 氮化鍊銦紹、填化銘銦鎵或上述組合，並藉由摻雜紬物 以形成第一型半導體與第二型半導體層，此部份材料選用 視使用者的需求與設計而定，其中本實施例係以氮化鎵作 為舉例說明。 在本實施例中，發光元件結構100更可包含有一第一 電極E1及一第二電極E2，其中第一電極E1形成在第一 型半導體層122上，而第二電極E2形成在第二型半導體 層126上。第一電極E1與第二電極E2可以是單一層或是 多層金屬堆疊，且二者的材質亦可以選用如：金、銀、銅、 錫、鉛、铪、鎢、鉬、鈥、鈦、鋁、鋁、鋅等導電性良好 的金屬、上述合金、上述金屬氧化物、上述金屬氮化物， 201242085 37031twf.doc/t 或上述組合之材質。 具體來說，當使用者對第一電極扪與第二電極£2施 加驅動電壓時，便可於發光元件結構1〇〇内部產生一光 L1，其中光L1出射於發光元件結構1〇〇外部時，便可形 成一種明光源。在本貫施例中，由於環形間隙1 3 〇是蠢 晶體120與各弧形凸起部114未實體連接並保持空隙的部 分，因此’環形間隙130可以是一空氣間隙或—真空間隙。 以環形間隙為空氣間隙來說，由於空氣的折射率為 1.00027，因此磊晶體120與各弧形凸起部114未實體連接 的部分便會纽較高的騎轻，HM12G選用氮 化鎵材質時’其折射率為n=2,5。也就是說，位於蠢晶體 120内部的光L1在傳遞至環形間隙13〇時便很容易會被環 形間隙130所反射，進而提高發光元件結構1〇〇的光取出 率。此外，由於環形間隙130與磊晶體12〇(如第一型半導 體層122)接觸的表面亦為一曲面，因此被環形間隙謂所 反射的光L1便較容㈣出射於發光元件結構刚外，此 亦為發光元件結構100的光取出率可獲得提升之原因。 一般來說，環形間隙130佔據各弧形曲面S1、之表面 積的比例越高’職光元件結構⑽的絲出率亦會隨之 提升，但礙於製程之因素，此比例無法達到⑽％，因此 若為使發光7L件結構100的光取出率獲得提升 130佔據各_曲面S1之表面積便會落在_可實施之範圍 内，具體而言，環形間隙130佔據各弧形曲面S1之表面 積的比例實質上可落在20%至80%之間。 201242085 i/UJitwt'.doc/t 另外’上述的基板110可以是一藍寶石（sapphire)基 板、一碳化矽(Sic)基板、一矽(Si)基板或是其他適當基板， 其中本實施例以藍寶石基板作為舉例說明，但不以此為限。 基於上述可知，本實施例之發光元件結構100主要是 藉由將磊晶體120形成於圖案化基板11〇上，其中圖案化 基板110具有複數個間隔排列且凸起表面丨12的孤形凸起 部114,因此便可藉由控制磊晶過程中之橫向磊晶速度與 縱向磊晶速度，使磊晶體120實體連接這些弧形凸起部114 之局部區域，而未實體連接並保持空隙的部分則形成環繞 弧形凸起部114的環形間隙130〇如此一來，當發光元件 結構100被驅動而於内部產生光L1時，便很容易會被環 形間隙130所反射，而可提高發光元件結構1〇〇的光取出 率。另外，由於環形間隙130與磊晶體12〇接觸的表面亦 為曲面，因此被環形間隙130所反射的光u亦會較容易 地出射於發光元件結構100外，此亦為發光元件結構1〇〇 的光取出率可獲得提升之原因。 圖2為本發明另一實施例之發光元件結構的局部剖示 圖。凊參考圖2，本實施例之發光元件結構2〇〇與前述發 光兀件結構100採用相同的概念與原理，二者不同之處在 於.基板110a上的弧形凸起部114a之寬度似與高度m 的比值較大’其比值實質上落在125%至2〇〇%之間。具體 而έ，由於弧形凸起部114a之寬度汜與高度m的比值 車，大(相較於II 1A所输示的狐形凸起部114)，因此代表弧 形曲面S2之斜率變化較小，意即較平緩。如此—來，遙 12 201242085 37031twf.doc/t 晶體m形成於基板服時，環形_ 形曲面Μ之表面積的比例便會提高 提 件結構2GG的光取出率。 _々升發先tl 的比二=凸起部_之寬度d2與高度H1 的比值右過大時’發光元件結構的 弱，因此基板_上的狐形凸起㈣4a之寬度 ?的:實質上落在75%至纏之間，發光元件結構；； 被驅動後將可呈現較佳的光取出率。 圖3A〜圖3F為本發明一實施例之發光元件結構的製 作流程圖。請先參考圖3A，首先，提供前述的基板則， 其中關於此基板110的具體結構描述可參考上述，在此便 不再贅言。 之後，形成前述的第一型半導體層122於基板U〇之 表面112與派形凸起部114，如圖3B所示。在本實施例中， 形成第-型半導體層122的方法例如是使用傳統的蠢晶方 式。特別的n型半導體層122之遙晶厚度在蟲晶至 一預没水平線310之前，其縱向P2的磊晶速度可等於橫 向P1的磊晶速度。 接著’第一型半導體層122之磊晶厚度在磊晶至一預 設水平線310之後’便可加快縱向的磊晶速度或是減弱橫 向的蠢晶速度’使得於一第一時間内縱向P2的磊晶速度 會大於橫向P1的磊晶速度，如此便會形成圖3C所繪示的 形態。 然後’於第一型半導體層122之磊晶厚度在磊晶至弧 ；；! 13 201242085 3VU31twt.doc/t 形凸起部之厚度前，將縱向P2的轰晶速度大於橫向PI的 絲日日，度轉換成橫向ρι的蟲日日日速度大於縱向p2的蟲晶速 度思、即曰，接續前述第一時間之後的一第二時間内，橫向 P1的蠢晶速度會大於縱向P2的蟲晶速度，如此一來，便 可形成如圖3D崎示的形態。至此第-型半導體層122 便會與各弧形凸起部114相配合而界定出前述的環形間隙 130，且，環形間隙13。環繞各弧形凸起部114。 接著’依序形成前述發光層124與前述第二型半導體 層126於第一型半導體層I22上，而可構成前述的蟲晶體 120’如圖3E所繪示。在本實施例中，第一型半導體層122、 發光層124與第二型半導體層126的材質可參考上述的描 述，在此便不再贅述。 另外’由於本實施例之發光元件結構1〇〇是以水平式 發光元件結構作為舉例說明，因此便可進行微影蝕刻製 程，以移除部分發光層124與第二型半導體層126而暴露 出部分第一型半導體層122，如圖3F。之後，分別形成前 述第一電極與前述的第二電極於第一型半導體層與第二型 半導體層上’便可完成一種如圖1A所示之發光元件結構 100的製作方法。 綜上所述，本發明之發光元件結構及其製作方法至少 具有下列優點。首先’藉由將磊晶體形成於圖案化基板上， 其中圖案化基板具有複數個間隔排列且凸起表面的弧形凸 起部’因此便可藉由控制磊晶過程中之橫向磊晶速度與縱 向磊晶速度，使磊晶體實體連接這些弧形凸起部之局部區 201242085 37031twf.doc/t 域’而未實體連接並保持空隙的部分則形成環繞弧形凸起 部的環形間隙。如此’當發光元件結構被驅動而於内部產201242085 3/UJltwt.doc/t VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting element structure, and more particularly to a light-emitting element structure having a better light-emitting efficiency. [Prior Art] In recent years, due to the increasing luminous efficiency of light-emitting diodes, light-emitting diodes have gradually replaced fluorescent lamps and incandescent light bulbs in some fields, such as scanner light sources requiring high-speed reaction, and backlights for liquid crystal displays. Or the dashboard lighting of the front light source car, the traffic light, and the general lighting device. A common light-emitting diode system is formed using a nitride semiconductor material, and most of the above-described light-emitting diode systems are formed on the sapphire substrate in an epitaxial manner. A conventional light-emitting diode structure usually includes a substrate, an N-type cladding layer, a multiple quantum well structure, a P-type upper confinement layer, and an N-type. Electrode and a P-type electrode. The N-type lower confinement layer, the multiple quantum well structure and the p-type upper confinement layer are sequentially arranged on the substrate, and the N-type electrode and the P-type electrode are electrically connected to the N-type lower confinement layer and the p-type upper confinement layer, respectively. The driving voltage is applied to the N-type electrode and the p-type electrode to drive the light-emitting diode structure to emit light. Generally, when the light emitting diode structure is driven to emit light, since the refractive index of the substrate and the N-type lower confinement layer are similar, the angle and degree of light reflected by the substrate may be limited, thereby causing the light to be emitted. The light extraction efficiency of the diode structure cannot be improved. Therefore, how to effectively increase the hair without changing the 愔τ of the change of the material: = two = by the structural design, and then the problem, the light extraction efficiency of the structure It is an important [invention] The present invention provides a rate of apricot. The spheroidal structure of the heart has a better illuminating effect. The present invention further provides a structure for illuminating the illuminating member. The domain method of the I structure can be shaped into the other aspects of the invention. It is understood that some or all of the objectives of the invention are disclosed or other objects. ^ Out - kind of luminescent insect crystal. The substrate has a substrate and a raised portion. This is: the interval is arranged and the convex surface = some _ curved surface is connected with the surface, and the value of the respective curved surface relative to the surface is defined by the mating of the base phase in the direction close to the substrate; The convex portion has an arcuate convex portion. _ 感 间隙 ′ ′ ′ ′ ′ ′ ′ ′ ′ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ Part of these annular gaps are formed. In the embodiment of the invention, the ratio of the surface area of each of the annular gaps occupying each of the arcuate curves 20122085 j /vjiiwi.d〇c/t falls substantially between 20% and 80%. In an embodiment of the invention, the distance between the tops of any two adjacent arcuate projections substantially falls between 1.5#1 to 6#111. In one embodiment of the invention, the arcs The ratio of the width of the convex portion falls substantially between 75% and 200%. Further, in an embodiment of the invention, the height of each curved convex portion substantially falls at 1.4 // m to 1.6 // m. In one embodiment of the invention, the substrate comprises a sapphire substrate, a bismuth carbide (Sic) substrate or a germanium (Si) substrate. In one embodiment of the invention The epitaxial crystal has a first type semiconductor layer, a light emitting layer partially covering the first type semiconductor layer, and a second type semiconductor layer covering the light emitting layer from the substrate in a direction away from the substrate. In one example, the material of the epitaxial crystal includes a semiconductor compound of the I[ group and the V group element. In one embodiment of the invention, the first type semiconductor layer is an n type semiconductor layer, and the second type semiconductor layer is a p type. a semiconductor layer. In an embodiment of the invention, the light-emitting element structure further comprises a first And a second electrode, wherein the first electrode is formed on the first type semiconductor layer, and the second electrode is formed on the second type semiconductor layer. Another embodiment of the present invention provides a structure for forming a light emitting element structure. It comprises at least the following steps. First, a substrate is provided, wherein the base has an arcuate convex surface having a surface and a plurality of spaced and convex surfaces, and the curved convex portions respectively have an arc connected to the surface The absolute value of the slope of each curved surface relative to the surface increases with the direction of the substrate 201242085 37031twf.doc/t. Then, an epitaxial crystal is formed on the surface of the substrate and the curved protrusions, wherein the crystal is lifted. Cooperating with the arcuate protrusions defines a plurality of annular gaps, and each annular gap surrounds each of the arcuate protrusions. In one embodiment of the invention, the method of forming the epitaxial crystals on the substrate comprises the following steps. Forming a first type semiconductor layer on the substrate. Thereafter, forming a light emitting layer on the first type semiconductor layer, and then forming a second type semiconductor layer on the light emitting layer. In one embodiment of the present invention, the method of forming the first type semiconductor layer on the substrate comprises: sequentially patterning the first type semiconductor layer on the substrate in a first time and a second time to make the first type The semiconductor layer cooperates with the isolated protrusions to define the annular gaps, wherein in the first time, the longitudinal worm speed is greater than the lateral crystal speed, and the '43⁄4 direction of the worm speed in the second time In one embodiment of the present invention, the method of forming the light emitting device structure further includes forming a first electrode on the first type semiconductor layer, and forming a second electrode to be formed on the second type semiconductor layer The above-mentioned 'light-emitting element structure of the present invention is formed by forming an epi-crystal on a patterned substrate, wherein the patterned substrate has a plurality of arc-shaped convex portions arranged at intervals and surface-up, so that the control can be controlled by The epitaxial velocity and the longitudinal epitaxial velocity in the crystal process cause the epitaxial crystal to physically connect the local regions of the arcuate convex portions, while the portions that are not physically connected and complement the voids are formed to form With the annular-shaped protrusion. Thus, when the light-emitting element structure is driven to generate light internally, it is easily reflected by the annular gap, and the light extraction rate of the light-emitting element structure can be improved. 201242085 - In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following detailed description of the embodiments and the accompanying drawings. [Embodiment] The foregoing and other technical contents and features of the present invention are described in detail with reference to a preferred embodiment of a preferred embodiment of the present invention. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only directions referring to the additional drawings. Therefore, the directional terminology used is for the purpose of illustration and not limitation. 1A is a view showing the structure of a light-emitting element according to an embodiment of the present invention, and FIG. 1 is a partial top view of the structure of the light-emitting element illustrated in FIG. 1A, wherein the substrate is shown and the ring is formed on the substrate for convenience. The technical features of the gap are omitted, and the other elements on the substrate are omitted. Referring to FIG. 1A and FIG. 1B, the light-emitting element structure of the present embodiment includes a substrate 110 and an epi-crystal 120. The substrate 11A has a surface U2 and a plurality of arcuate projections 114 spaced apart from each other and having a convex surface 112. In addition, the arcuate convex portions 114 respectively have a curved curved surface 8 and the curved curved surfaces S1 are connected to the surface 112, and the absolute values of the slopes of the curved curved surfaces S1 with respect to the table © 112 are close to the substrate 11〇. The direction is increasing. Specifically, the arcuate protrusions 114 are, for example, a bullet-shaped protrusion, but are not limited thereto, and may also have a hemispherical curvature, a curvature of a circle, a curvature of a hyperbola, or other possibilities. Smooth continuous curved surface, this part can be seen from the width d2 and the height m of each curved convex portion 114. 8 201242085 37031twf.doc/t For example, the arcuate convex portion 114 ^ value is getting larger and larger, the thief button material U and the height H1 are relatively flat; relatively, if the curved convex portion 'meaning the ratio is more The smaller the value, the more the arc width (12 and the degree of Hl means steeper mountain. Therefore, the slope of S2=S1 will be larger, and the design depends on the design. The above is only an example to illustrate the needs of the department. The top ιΐ4= of the portion 114=: the ratio of the real=d2 to the height H1 may substantially fall depending on the ratio of the width d2 to the height H1 of the shape 4 taken by the user. The surface 112 of the substrate 110 and the U4 are as shown in FIG. 1A. Specifically, the epitaxial crystal gap lioH melon forming protrusion 114 cooperates to define a plurality of annular spaces, and each of the annular gaps 130 surrounds the foxes. The convex portion 114 is as shown in Fig. 1B. In the present embodiment, the gap I30 surrounding the arcuate convex portions (1) 130^2 is, for example, an annular closed gap, wherein the annular gap is formed in a manner The process of forming the crystal 12〇 on the substrate 11〇 is controlled by the lateral epitaxial velocity and the longitudinal epitaxial velocity. In the same manner, the detailed formation manner of the annular gap 13A will be described in the following paragraphs. In other words, the epitaxial crystal 120 formed on the substrate 11〇 will be connected to a partial region of the fox-shaped convex portion 114, and the worm The portion of the crystal 12 〇 /, each of the curved convex portions 114 not physically connected and maintaining a gap will form 201242085 J / U3itwt.doc / t constitute the annular gap 130 as shown in Figures 1A and IB. The epitaxial crystal 120 sequentially has a first type semiconductor layer 122, a light emitting layer 124 partially covering the first type semiconductor layer 122, and a second type semiconductor covering the light emitting layer 124 from the substrate no in a direction away from the substrate 110. The layer 126, wherein the first type semiconductor layer 122 can be an n-type semiconductor layer, the second type semiconductor layer 126 can be a p-type semiconductor layer, and the light-emitting layer 124 can be a multiple quantum well layer. The semiconductor compound of the π[ group and the ν group element may be selected. Therefore, the material of the first type semiconductor layer 122 and the second type semiconductor layer 126 may be a binary compound such as gallium nitride or nitride. Indium; ternary compounds such as: aluminum gallium nitride, gallium indium nitride, aluminum indium nitride, gallium arsenide, indium gallium antimonide; and quaternary compounds (qUaternary c〇mp〇und) ), such as: nitridium chain indium, filled with indium gallium or a combination thereof, and doped with germanium to form a first type semiconductor and a second type semiconductor layer, this part of the material is selected according to the needs of the user Depending on the design, this embodiment is exemplified by gallium nitride. In this embodiment, the light emitting device structure 100 further includes a first electrode E1 and a second electrode E2, wherein the first electrode E1 is formed on the first type semiconductor layer 122, and the second electrode E2 is formed in the second type. On the semiconductor layer 126. The first electrode E1 and the second electrode E2 may be a single layer or a multi-layer metal stack, and the materials of the two electrodes may also be selected from the group consisting of gold, silver, copper, tin, lead, antimony, tungsten, molybdenum, niobium, titanium, aluminum. A metal having good conductivity such as aluminum or zinc, the above alloy, the above metal oxide, or the above metal nitride, 201242085 37031 twf.doc/t or a combination of the above materials. Specifically, when the user applies a driving voltage to the first electrode 扪 and the second electrode £2, a light L1 can be generated inside the light emitting element structure 1 ,, wherein the light L1 is emitted outside the light emitting element structure 1 At that time, a bright light source can be formed. In the present embodiment, the annular gap 130 may be an air gap or a vacuum gap since the annular gap 13 3 is a portion where the stray crystal 120 is not physically connected to each of the arcuate projections 114 and maintains a gap. In the case of the annular gap as the air gap, since the refractive index of the air is 1.00027, the portion of the epi-crystal 120 that is not physically connected to each of the curved convex portions 114 will be lighter, and when the HM12G is made of gallium nitride. 'The refractive index is n=2,5. That is to say, the light L1 located inside the stray crystal 120 is easily reflected by the annular gap 130 when it is transmitted to the annular gap 13〇, thereby improving the light extraction rate of the light-emitting element structure 1〇〇. In addition, since the surface of the annular gap 130 that is in contact with the epitaxial crystal 12〇 (eg, the first type semiconductor layer 122) is also a curved surface, the light L1 reflected by the annular gap is more (4) emitted outside the structure of the light emitting element. This is also the reason why the light extraction rate of the light-emitting element structure 100 can be improved. In general, the higher the proportion of the annular gap 130 occupying the surface area of each curved curved surface S1, the higher the silk-out rate of the light-emitting element structure (10), but the ratio cannot be reached (10)% due to the process factor. Therefore, if the light extraction rate of the light-emitting 7L structure 100 is increased, the surface area of each of the curved surfaces S1 will fall within the range that can be implemented. Specifically, the annular gap 130 occupies the surface area of each curved curved surface S1. The ratio can fall substantially between 20% and 80%. 201242085 i/UJitwt'.doc/t Further, the substrate 110 may be a sapphire substrate, a Sic substrate, a Si substrate or other suitable substrate, wherein the embodiment is sapphire. The substrate is exemplified, but not limited thereto. Based on the above, the light emitting device structure 100 of the present embodiment is mainly formed by forming an epitaxial crystal 120 on the patterned substrate 11 , wherein the patterned substrate 110 has a plurality of isolated protrusions arranged at intervals and having a convex surface 丨 12 . The portion 114, so that the epitaxial crystal 120 can be physically connected to a partial region of the arcuate convex portion 114 by controlling the lateral epitaxial velocity and the longitudinal epitaxial velocity during the epitaxial process, while the portion not physically connected and maintaining the void Then, the annular gap 130 surrounding the curved convex portion 114 is formed. When the light emitting element structure 100 is driven to generate the light L1 internally, it is easily reflected by the annular gap 130, and the light emitting element structure can be improved. 1 〇〇 light extraction rate. In addition, since the surface of the annular gap 130 that is in contact with the epitaxial crystal 12 is also a curved surface, the light u reflected by the annular gap 130 is also easily emitted outside the light-emitting element structure 100, which is also a light-emitting element structure. The light extraction rate can be increased. Fig. 2 is a partial cross-sectional view showing the structure of a light-emitting element according to another embodiment of the present invention. Referring to FIG. 2, the light-emitting element structure 2A of the present embodiment adopts the same concept and principle as the foregoing light-emitting element structure 100, and the difference is that the width of the curved convex portion 114a on the substrate 110a is similar to The ratio of the height m is larger 'the ratio actually falls between 125% and 2%. Specifically, since the ratio of the width 汜 of the curved convex portion 114a to the height m is large (compared to the fox-shaped convex portion 114 shown by II 1A), the slope of the curved curved surface S2 is changed. Small, meaning is more gradual. So, come, 12 201242085 37031twf.doc / t When the crystal m is formed on the substrate, the ratio of the surface area of the annular Μ-shaped curved surface will increase the light extraction rate of the lifting structure 2GG. _ 々 发 发 tl tl tl = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = Between 75% and the winding, the light-emitting element structure;; after being driven, will exhibit a better light extraction rate. 3A to 3F are flow charts showing the structure of a light-emitting element according to an embodiment of the present invention. Referring first to FIG. 3A, first, the foregoing substrate is provided. The specific structural description of the substrate 110 can be referred to the above, and will not be further described herein. Thereafter, the aforementioned first type semiconductor layer 122 is formed on the surface 112 of the substrate U and the convex portion 114 as shown in Fig. 3B. In the present embodiment, the method of forming the first-type semiconductor layer 122 is, for example, a conventional stray crystal method. The delta crystal thickness of the particular n-type semiconductor layer 122 may be equal to the epitaxial velocity of the transverse P1 before the crystallites to a pre-existing horizontal line 310. Then, 'the epitaxial thickness of the first type semiconductor layer 122 after epitaxial growth to a predetermined horizontal line 310' can accelerate the longitudinal epitaxy speed or attenuate the lateral stupid crystal speed' so that the longitudinal P2 in a first time period The epitaxial velocity will be greater than the epitaxial velocity of the lateral P1, thus forming the morphology depicted in Figure 3C. Then, the epitaxial thickness of the first type semiconductor layer 122 is higher than that of the lateral PI before the thickness of the epitaxial to arc;;! 13 201242085 3VU31twt.doc/t convex portion The daytime speed of the insects converted into the horizontal ρι is greater than the worm speed of the longitudinal p2, that is, the second time after the first time, the stupid crystal velocity of the lateral P1 is greater than that of the longitudinal P2. The speed, as a result, can form a shape as shown in Fig. 3D. Thus, the first-type semiconductor layer 122 cooperates with the arcuate projections 114 to define the aforementioned annular gap 130 and the annular gap 13. Around each of the arcuate projections 114. Then, the light-emitting layer 124 and the second-type semiconductor layer 126 are sequentially formed on the first-type semiconductor layer I22, and the aforementioned insect crystal 120' can be formed as shown in FIG. 3E. In the present embodiment, the materials of the first type semiconductor layer 122, the light emitting layer 124 and the second type semiconductor layer 126 can be referred to the above description, and will not be described herein. In addition, since the light-emitting element structure 1 of the present embodiment is exemplified by the horizontal light-emitting element structure, a lithography process can be performed to remove part of the light-emitting layer 124 and the second-type semiconductor layer 126 to expose A portion of the first type semiconductor layer 122 is as shown in FIG. 3F. Thereafter, a method of fabricating the light-emitting device structure 100 as shown in FIG. 1A can be completed by forming the first electrode and the second electrode on the first-type semiconductor layer and the second-type semiconductor layer, respectively. As described above, the light-emitting element structure of the present invention and the method of fabricating the same have at least the following advantages. Firstly, by forming an epitaxial crystal on a patterned substrate, wherein the patterned substrate has a plurality of arcuate protrusions arranged at intervals and convex surfaces, it is possible to control the lateral epitaxy speed in the epitaxial process. The longitudinal epitaxial velocity causes the epitaxial crystal to physically connect the local regions of the arcuate projections 201242085 37031twf.doc/t domain' while the portions that are not physically connected and maintain the voids form an annular gap around the arcuate projections. So when the light-emitting element structure is driven and produced internally
生光時’便很容易會被環形間隙所反射，而可提高發光元 件結構的光取出率。 X 另外，由於環形間隙與磊晶體接觸的表面亦為曲面， 因此被環形間隙所反射的光亦會較容易地出射於發光元件 結構外，此亦為發光元件結構的光取出率可獲得提升之原 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實叙顧，即大凡 ^ ，㈣兒明内容所作之簡單的等效變化與修 之範圍内。另外本發明的任-實施例或 特：“：達成本發明所揭露之全部目㈣憂點或 要部分和標題僅是用來輔助專利文件搜尋 用亚非用來限制本發明之權利範圍。 【圖式簡單說明】 0。圖1 Α為本翻—實關讀光元件結構的局部剖示 圖1Β為圖1所1會示之發光元件結構的局部上視圖。 目。圖2為本發實關之發光元件結構的局部剖示 w 〜圖3F為本發明—實施例之發統件結構的製 15 201242085 j / \jj i iwi.doc/t 【主要元件符號說明】 100 :發光元件結構 110 :基板 112 :表面 114 :弧形凸起部 114b :頂部 120 :磊晶體 122 :第一型半導體層 124 :發光層 126 :第二型半導體層 200 :發光元件結構 110a :基板 114a :弧形凸起部 S1 :弧形曲面 dl :距離 d2 : 寬度 H1 : 高度 130 =環形間隙 E1 ： 第一電極 E2 : 第二電極 L1 ： 光 S2 ： 弧形曲面 16When the light is generated, it is easily reflected by the annular gap, and the light extraction rate of the light-emitting element structure can be improved. In addition, since the surface of the annular gap in contact with the epitaxial crystal is also a curved surface, the light reflected by the annular gap can also be easily emitted outside the structure of the light-emitting element, which also improves the light extraction rate of the light-emitting element structure. The foregoing is only the preferred embodiment of the present invention, and should not be construed as limiting the scope of the present invention, that is, the simple equivalent changes and modifications made by the content of the present invention. Further, any of the embodiments of the present invention or the following: ": Achieve all the objects (4) of the present invention, or the title and the title are only used to assist the use of the Asian and African patent documents for the purpose of limiting the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing the structure of a light-receiving light-receiving element. Fig. 1 is a partial top view showing the structure of a light-emitting element shown in Fig. 1. Fig. 2 is a practical example A partial cross-sectional view of the structure of the light-emitting element w to FIG. 3F is a system for the structure of the hair piece of the present invention - an embodiment 15 201242085 j / \jj i iwi.doc/t [Description of main component symbols] 100: light-emitting element structure 110: substrate 112: surface 114: arcuate convex portion 114b: top portion 120: epitaxial crystal 122: first type semiconductor layer 124: light emitting layer 126: second type semiconductor layer 200: light emitting element structure 110a: substrate 114a: curved convex portion S1: curved surface dl: distance d2: width H1: height 130 = annular gap E1: first electrode E2: second electrode L1: light S2: curved surface 16