201241955 六、發明說明： 【發明所屬之技術領域】 本發明係關於在（例如）用以產生多層半導體晶圓之兩個 晶圓之間進行的直接晶圓接合，該等多層半導體晶圓（例 _· 如）用於需要將微組件之一或多個層轉移至最終支撐基板 . 上的3D整合技術’而且用於電路轉移或用於製造背面光照 式成像器件中。該一或多個經轉移之層包括至少部分地產 生於初始基板上之微組件（電子器件、光電子器件等），該 等層接著經堆疊至自身可包括組件之最終基板上。主要因 為存在於同一層上之微組件之極小的大小及大的數目，所 以每一經轉移之層必須極準確地定位於最終基板上以達成 與下伏層之成功'極嚴格對準。另外，可能有必要在已轉 移層之後對其進行處理（例如）以便形成其他微組件、曝露 基板上之微組件、產生互連件，等等。 【先前技術】 热而，甲謂·人巳觀察到 成之微組件對準的額外微組件，則在轉移之後，處理有時 係極其困難的’此係因為在接合之後晶圓中出現非均勻變 形。申請人已觀察到’該非均勻變形中之至少一些的出現 與晶圓之製造期間在接合之前非均句負載至晶圓 關聯。 旁 尤其關於3D整合，由低壓直接晶圓接合引起之 形接著導致各種層之微組件之未對準的現象。以約/變 [奈米]之缺陷之形式來展現下文參看圖i所描述的彼未 162602.doc 201241955 現象（亦稱為「覆疊」），該等缺陷實質上小於在直接接合 時晶圓對準中的精確度。 圖1說明藉由第一晶圓或初始基板510與第二晶圓或最終 基板520之間的低壓直接晶圓接合而獲得的三維結構5〇〇， 藉由光微影使用光罩以界定用於形成對應於待形成之微組 件之圖案的區來在第一晶圓或初始基板51〇上形成第一系 列微組件511至519。初始基板510在接合之後已被薄化以 便移除材料之存在於微組件51丨至519之層上方的部分，且 微且件521至529之第一層已形成於初始基板510之曝露表 面處。 然而，甚至在使用定位工具時，在微組件511至519中之 一些相對於微組件521至529中之一些之間仍出現偏移，諸 如圖1中所指示之偏移Δη、Δη、、△〇(分別對應於在微 組件對 511/521 ' 512/522、5 13/523 及 514/524 之間觀察到 的偏移）。 該等偏移並非由可源於基板之不準確組裝的基本轉變 (平移、旋轉或其組合）引起。該等偏移由造成某些微組件 511至519處之局部非均勻移動的非均勻變形引起。此外， 在轉移之後形成於基板之曝露表面上之微組件521至529中 的一些展現相對於該等微組件511至519之位置的變化，該 等微組件511至519可為約數百奈米或甚至一微米。 微組件之兩個層之間的彼未對準現象（亦稱為「覆疊」） 可引起短路堆|中之失真或兩個層之微組件之間的連接 障因此s經轉移之微組件為由像素組成之成像器件 162602.doc 201241955 時且當轉移後處理步驟意欲在彼等像素中之每一者上形成 彩色濾光片時，已觀察到彼等像素中之一些上的色彩化功 能損失。 彼覆疊現象因此導致經製造多層半導體晶圓之品質及價 ' 值的降低。因為對增加微組件之小型化及增加其每層整合 .· ㈣的持、續冑求’戶斤以㈣象之影響正變得愈來愈關鍵。 為進行直接晶圓接合’使用包含具有支撐壓板（亦稱作 「夹盤」）之基板載體器件或晶圓载體的接合裝置，該支 撐壓板上停置有待接合在一起之兩個晶圓中的第一者，第 二晶圓係放置於該第-晶圓上。在起始接合波在該兩個晶 圓之間的傳播之前’進行包含使用推送器推送兩個晶圓以 與抵靠元件相抵之對準晶圓之-或多個操作。該等晶圓與 該等對準元件之間的接觸直接或間接地在晶圓中產生機械 應力，若該等機械應力未被鬆弛，則與尚未經受外部接觸 及機械力之相同晶圓相比，該等機械應力導致晶圓中之非 均勻變形。結果，在繼續進行直接晶圓接合之前允許晶圓 中之此等應力鬆他以便避免出現上文所描述之非均句變形 係重要的。 ； 【發明内容】 : 本發明之目的為提供—種可使在對準晶圓時出現於晶圓 中之應力鬆他的解決方案，且接著在晶圓具有少量非均勻 變形之情況下進行直接晶圓接合，且藉此使所得結構中之 覆疊現象減至最少。 為此’本發明提議一種用於至少兩個晶圓之間的直接晶 162602.doc 201241955 圓接合之裝置，該裝置包含至少一晶圓載體器件，該至少 一晶圓載體器件包含由用於收納該兩個晶圓中之一者之一 或多個支樓元件構成的夾盤及放置於該夾盤周圍之對準元 件； 該裝置之特徵在於：該夾盤之該一或多個支撐元件具有 一總接觸表面積，該總接觸表面積不大於待由該一或多個 支撐元件支撐之晶圓之表面積的85%。 如下文所詳細解釋’申請人已觀察到，由直接晶圓接合 引起之導致最大覆疊之非均勻變形位於晶圓側面附近之區 域中。申請人已判定，歸因於晶圓與夾盤之間的吸引力， 與晶圓載體器件之夾盤接觸之晶圓不能相對於該夾盤始終 自由地改變位置，尤其在對準元件附近。 本發明之裝置包括夾盤，與先前技術夾盤相對比，該夾 盤具有小於晶圓之總表面積的與藉此待支撐之晶圓的總接 觸表面積’此情形意謂無接觸區可提供於晶圓與夾盤之 間’從而允許晶圓在此等區中自由地改變位置且減輕應 力。 該夾盤之一或多個支撐元件的總接觸表面積可小於待由 該一或多個支撐元件支撐之晶圓之表面積的6〇%或甚至 50% 〇 在一可能變化中，夾盤之一或多個支撐元件位於距對準 兀件預定距離處，此情形意謂與夾盤接觸之晶圓可至少在 s亥等對準元件附近於垂直方向上自由地改變位置，且因此 在對準操作期間出現於此等元件處之應力可得以鬆弛，或 162602.doc 201241955 與晶圓之較低表面與夾盤之接觸有關聯的機械及/或靜電 黏著相互作用不會發生。此情形因此避免在接合之後出現 晶圓中之非均勻變形的風險。夾盤之支撐元件與對準元件 之間的距離較佳至少為5 mm[毫米]。 尤其關於3D整合’在額外微組件層之後續形成期間或在 接合各自包括意欲相互對準之微組件的兩個晶圓時出現覆 疊之風險被大大減小。 在本發明之接合裝置之一實施例中’該夾盤包含呈鋸齒 形盤之形式的支撐元件，該支撐元件包括在其周邊處分別 放置成面向對準元件之凹進區域。 在本發明之接合裝置之另一實施例中，該夾盤包含直徑 小於圓形區之直徑的圓形支撐元件，該圓形區之直徑對應 於待放置於夾盤上之晶圓之直徑。該晶圓載體器件可進一 步包括在圓形區處之環形區域，該環形區域向上突出達不 同於夾盤突出所達之高度的高度。 在本發明之接合裝置之另—實施例中，該夾盤包括分散 於圓形區内之複數個支撐元件（諸如，螺栓或銷），該圓形 區對應於待由夾盤支撐之晶圓之直徑。該等支撐元件可具 有相同高度或不同高度，以便界定具有凸面或凹面形狀之 夾盤表面。根據本發明之特定態樣，該等對準元件係由一 推送器及兩個抵靠元件構成。該兩個抵靠元件可分別對應 於意欲與晶®中所提供之„凹口合作的保持銷及定位 銷。 在本發明之特定可能實施例中，該接合裝置進一步包含 I62602.doc 201241955 可移動間隔元件，今笼 移動間隔元件係放置灰 以使待接合在一起之θ圓祕士 圓暫時面向彼此而不接觸。 本發明亦提供一種至少一 第一日日圓與一第-曰[§]夕鬥沾 直接晶圓接合之方法分士 圓兴第一日日圓之間的 …曰法係藉由根據本發明之接合裝 置進仃且至少包含： •將第一晶圓放置於該接人 上的步驟. 〇裝置之B曰圓載體器件之夾盤 •將第一晶圓放置於第一 am κ i π乐晶圓上的步驟； •藉由兩個晶圓與對準元件 1千之間的接觸進行之财準該辇 晶圆的一或多個步驟；及 丁平只寻 •起始接合波之傳播的步驟。 根：本發明之方法之特定實施，該方法係藉由根據本發 明之接合裝置進行’該接合裝置包含一推送器、兩個抵靠 兀件及放置於夾盤周圍之至少= 個間隔兀件，該方法之特 徵進一步在於，在將兩個晶圓放 接合裝置之晶圆載體 器件之夾盤上的步驟期間，將筮一 a 。。 夺第圓放置成與晶圆载體 器件之夾盤接觸，而將第二晶圓放 日圓玟置成面向第一晶圓，將 間隔元件插入於兩個晶圓之間 疋难符兩個晶圓之間的空 間，該方法進一步包含在起始接合 依《及之傳播的步驟之前進 行以下操作： •使間隔元件中之一者縮回； 側向力施加至該等 ’ 5亥等晶圓係藉由 •借助於該接合裝置之推送器將第一 晶圓，以便使兩個晶圓相對於彼此對準 該接合裝置之抵靠元件來保持； 162602.doc 201241955 •使其他間隔元件縮回； •使該推送器縮回； •借助於該推送器將第二側向力施加至該兩個晶圓；及 •使該推送器縮回。 在本發明之一態樣中，起始接合波之步驟包含以機械方 式將壓力點施加至兩個晶圓中之一者。 使用本發明之直接晶圓接合方法意謂在微組件層之轉移 期間’可消除或限制覆疊現象且可產生極高品質之多層半 導體晶圓。詳言之’該微組件層可包含成像感測器。 【實施方式】 本發明之其他特性及優點自藉由非限制性實例給出且參 看隨附圖式進行之本發明之特定實施例的以下描述而變得 顯而易見。 本發明大體而言適用於至少包含第一基板或晶圓至第二 基板或晶圓上之直接晶圓接合之複合結構的產生。 直接晶圓接合為本質上熟知之技術。應回想到，直接晶 圓接合之原理係基於使兩個表面直接接觸，亦即，不使用 特定材料（黏著劑、蠟、焊料等）。此操作需要待接合在一 起之表面足夠平滑且不含顆粒或污染物，且需要使該等表 面足夠靠近以允許起始接觸，通常隔開小於數奈米之距 離。當此情形發生時’兩個表面之間的吸引力足夠高以引 起直接接合（藉由待接合之兩個表面之原子或分子之間的 電子相互作用之該組吸引力（凡得瓦爾力）誘發的接合）。 藉由在一晶圓（與另一晶圓緊密接觸）上起始至少一接觸 162602.doc 201241955 點以便觸發自彼接觸點之接合波的傳播，進行晶圓接合。 此處將術語「接合波」應用於接合或直接接合鄰域 (front)，該接合波自起始點傳播且對應於吸引力（凡得瓦爾 力）自接觸點在兩個晶圓之間的整個緊密接觸表面（接合界 面)上的擴散。該接觸點通常可藉由將機械壓力施加至兩 個晶圓中之一者的曝露表面來起始。 如上文所指示，在起始接合波之傳播之前’進行對準晶 圓之一或多個㈣。圖2展示先前技術接合裝置100,其包 含晶圓載體器件m ’該晶圓載體器件UG具備用於收納待 接合在-起之兩個晶圓中之一者的夾盤u卜推送器賺 分別由保持銷13〇及定位銷140構成之兩個抵靠元件安置於 夾盤111周圍。夾盤111之直徑與意欲安置於其上之晶圓的 直徑幾乎相同，使得推送器、保持銷13G及;t位銷140非常 接近於夾船於暫時防止待接合在—起之兩 個晶圓之間的接觸之三個間隔元件15()至152亦存在於爽盤201241955 VI. Description of the Invention: [Technical Field] The present invention relates to direct wafer bonding between, for example, two wafers for producing a multilayer semiconductor wafer, such _· eg) for 3D integration technology on the need to transfer one or more layers of micro-components to the final support substrate. Also used in circuit transfer or in the manufacture of back-illuminated imaging devices. The one or more transferred layers include microcomponents (electronic devices, optoelectronic devices, etc.) that are at least partially native to the initial substrate, the layers then being stacked onto a final substrate that may itself comprise the components. Primarily due to the extremely small size and large number of micro-components present on the same layer, each transferred layer must be positioned very accurately on the final substrate to achieve a 'very tight alignment' with the underlying layer. In addition, it may be necessary to process the transferred layer after it has been transferred (for example) to form other micro-components, expose the micro-components on the substrate, create interconnects, and the like. [Prior Art] It is hot, and it is observed that the additional micro-components that are aligned with the micro-components are sometimes extremely difficult after the transfer. This is because the non-uniformity occurs in the wafer after bonding. Deformation. Applicants have observed that the occurrence of at least some of the non-uniform deformations is associated with a non-uniform load-to-wafer prior to bonding during fabrication of the wafer. In particular, with regard to 3D integration, the shape caused by low voltage direct wafer bonding then leads to misalignment of the micro-components of the various layers. The phenomenon of the 162602.doc 201241955 (also referred to as "overlap") described below with reference to Figure i is shown in the form of a defect of about [nano], which is substantially smaller than the wafer at the time of direct bonding. Accuracy in alignment. 1 illustrates a three-dimensional structure obtained by low-voltage direct wafer bonding between a first wafer or initial substrate 510 and a second wafer or final substrate 520, using a photomask for definition by photolithography A first series of micro-components 511 to 519 are formed on the first wafer or initial substrate 51A in forming a region corresponding to the pattern of the micro-component to be formed. The initial substrate 510 has been thinned after bonding to remove portions of the material present above the layers of the micro-components 51A to 519, and the first layer of the members 521 to 529 has been formed at the exposed surface of the initial substrate 510. . However, even when using the positioning tool, an offset occurs between some of the micro-components 511 to 519 with respect to some of the micro-components 521 to 529, such as the offsets Δη, Δη, Δ indicated in FIG. 〇 (corresponding to the offset observed between the micro-component pairs 511/521 '512/522, 5 13/523, and 514/524). These offsets are not caused by a fundamental transition (translation, rotation, or a combination thereof) that can result from inaccurate assembly of the substrate. These offsets are caused by non-uniform deformations that cause local non-uniform movement at certain microcomponents 511 through 519. In addition, some of the micro-components 521 to 529 formed on the exposed surface of the substrate after the transfer exhibit changes with respect to the positions of the micro-components 511 to 519, which may be about several hundred nanometers. Or even a micron. The misalignment between the two layers of the micro-assembly (also known as "overlap") can cause distortion in the short-circuit stack or a connection between the micro-components of the two layers. For imaging devices consisting of pixels 162602.doc 201241955 and when post-transfer processing steps are intended to form color filters on each of their pixels, colorization functions on some of their pixels have been observed loss. This overlap phenomenon thus leads to a decrease in the quality and price of the manufactured multilayer semiconductor wafer. Because it is becoming more and more important to increase the miniaturization of micro-components and increase the integration of each layer. (4) The persistence and enthusiasm of the households is affected by the influence of (4). For direct wafer bonding 'using a bonding device comprising a substrate carrier device or wafer carrier having a support platen (also referred to as a "clip"), the support platen is parked in two wafers to be joined together The first one, the second wafer is placed on the first wafer. The operation or the plurality of operations comprising pushing the two wafers with the pusher to abut against the abutting element are performed before the initial bonding wave propagates between the two crystal circles. The contact between the wafers and the alignment elements directly or indirectly generates mechanical stress in the wafer, and if the mechanical stress is not relaxed, compared to the same wafer that has not been subjected to external contact and mechanical force These mechanical stresses cause non-uniform deformation in the wafer. As a result, it is important to allow such stresses in the wafer to be relaxed before the direct wafer bonding is continued in order to avoid the non-uniform variation described above. SUMMARY OF THE INVENTION: It is an object of the present invention to provide a solution that allows stress to appear in a wafer when it is aligned with a wafer, and then directly with a small amount of non-uniform deformation of the wafer. Wafer bonding, and thereby minimizing overlaying in the resulting structure. To this end, the present invention proposes a device for direct bonding of at least two wafers between direct wafers 162602.doc 201241955, the device comprising at least one wafer carrier device, the at least one wafer carrier device comprising a chuck formed by one or more of the two wafer components and an alignment component placed around the chuck; the apparatus is characterized by: the one or more support components of the chuck There is a total contact surface area that is no greater than 85% of the surface area of the wafer to be supported by the one or more support members. As explained in detail below, the Applicant has observed that the non-uniform deformation caused by direct wafer bonding resulting in maximum overlap is located in the vicinity of the side of the wafer. Applicants have determined that due to the attractive force between the wafer and the chuck, the wafer in contact with the chuck of the wafer carrier device cannot be free to change position relative to the chuck, particularly in the vicinity of the alignment member. The apparatus of the present invention includes a chuck that, in contrast to prior art chucks, has a total contact surface area less than the total surface area of the wafer with respect to the wafer to be supported. This condition means that a contactless area can be provided Between the wafer and the chuck ' thereby allowing the wafer to freely change position and relieve stress in such zones. The total contact surface area of one or more of the support members of the chuck may be less than 6% or even 50% of the surface area of the wafer to be supported by the one or more support members, in one possible variation, one of the chucks Or the plurality of support members are located at a predetermined distance from the alignment member, which means that the wafer in contact with the chuck can freely change position in the vertical direction at least in the vicinity of the alignment member such as shai, and thus in alignment Stresses at these components can be relaxed during operation, or mechanical and/or electrostatic bonding interactions associated with the lower surface of the wafer and the chuck contact will not occur. This situation therefore avoids the risk of non-uniform deformation in the wafer after bonding. The distance between the support member of the chuck and the alignment member is preferably at least 5 mm [mm]. In particular, the risk of overlaying during 3D integration of additional micro-component layers or during bonding of two wafers each comprising micro-components intended to be aligned with one another is greatly reduced. In an embodiment of the joining device of the invention, the chuck comprises a support member in the form of a serrated disk comprising recessed regions respectively placed at their periphery to face the alignment member. In another embodiment of the joining apparatus of the present invention, the chuck includes a circular support member having a diameter smaller than the diameter of the circular portion, the diameter of the circular portion corresponding to the diameter of the wafer to be placed on the chuck. The wafer carrier device can further include an annular region at the circular region that projects upwardly to a height that is different from the height at which the chuck protrudes. In another embodiment of the joining device of the present invention, the chuck includes a plurality of support members (such as bolts or pins) dispersed in a circular region corresponding to the wafer to be supported by the chuck The diameter. The support members can have the same height or different heights to define a chuck surface having a convex or concave shape. According to a particular aspect of the invention, the alignment elements are comprised of a pusher and two abutment elements. The two abutment elements may each correspond to a retaining pin and a locating pin intended to cooperate with a notch provided in the crystal®. In a particular possible embodiment of the invention, the splicing device further comprises I62602.doc 201241955 movable The spacer element, the present cage moving spacer element is placed so that the θ circle coffin to be joined together temporarily faces each other without contact. The present invention also provides at least a first day yen and a first 曰[§] eve The method of direct wafer bonding is carried out by the joining device according to the present invention and comprises at least: • placing the first wafer on the pick-up Step. The chuck of the B-circle carrier device of the crucible device • the step of placing the first wafer on the first am κ i π-le wafer; • between the two wafers and the alignment element Contacting the one or more steps of the wafer; and Ding Ping only searching for the propagation of the initial bonding wave. Root: A specific implementation of the method of the present invention, by the method according to the present invention Engagement device Including a pusher, two abutting members, and at least one spacer member placed around the chuck, the method further characterized by placing the two wafers on the chuck of the wafer carrier device of the bonding device During the step, the first circle is placed in contact with the chuck of the wafer carrier device, and the second wafer is placed in the Japanese yen to face the first wafer, and the spacer element is inserted into the two. Between the wafers, it is difficult to match the space between the two wafers. The method further comprises the following operations before the initial bonding according to the step of propagating: • retracting one of the spacer elements; lateral force Applying to the '5 liters and the like wafers by holding the first wafer by means of the splicer of the bonding device to maintain the two wafers aligned with each other with respect to the abutting elements of the bonding device; 162602 .doc 201241955 • Retracting other spacer elements; • Retracting the pusher; • Applying a second lateral force to the two wafers by means of the pusher; and • Retracting the pusher. In one aspect of the invention, the initial bonding wave The step includes mechanically applying a pressure point to one of the two wafers. The direct wafer bonding method of the present invention means that during the transition of the micro-component layer, the overlay phenomenon can be eliminated or limited and can be extremely high. A quality multilayer semiconductor wafer. In detail, the micro-component layer may comprise an imaging sensor. [Embodiment] Other features and advantages of the invention are given by way of non-limiting example and reference is made to the accompanying drawings. The following description of specific embodiments of the invention will be apparent. The invention is generally applicable to the production of composite structures comprising at least a first substrate or wafer to a direct substrate bonding on a second substrate or wafer. Circular bonding is a technique well known in the art. It should be recalled that the principle of direct wafer bonding is based on direct contact of two surfaces, i.e., without the use of specific materials (adhesives, waxes, solders, etc.). This operation requires that the surface to be joined together be sufficiently smooth and free of particles or contaminants, and that the surfaces need to be close enough to allow initial contact, typically separated by a distance of less than a few nanometers. When this happens, the attraction between the two surfaces is high enough to cause direct bonding (by the interaction of the electrons between the atoms or molecules of the two surfaces to be joined (Van Valli) Induced engagement). Wafer bonding is initiated by at least one contact 162602.doc 201241955 point on a wafer (in close contact with another wafer) to trigger propagation of the bonding wave from the contact point. The term "bonding wave" is used herein to apply or directly bond a front, which propagates from the starting point and corresponds to the attractive force (vandvar force) from the point of contact between the two wafers. Diffusion across the entire tight contact surface (joining interface). The contact point can typically be initiated by applying mechanical pressure to the exposed surface of one of the two wafers. As indicated above, one or more (4) alignment pixels are performed prior to the propagation of the initial bonding wave. 2 shows a prior art bonding apparatus 100 including a wafer carrier device m' having a chuck for accommodating one of the two wafers to be bonded Two abutting members composed of the retaining pin 13 〇 and the positioning pin 140 are disposed around the chuck 111. The diameter of the chuck 111 is almost the same as the diameter of the wafer on which it is intended to be placed, so that the pusher, the retaining pin 13G and the t-spin 140 are very close to the pinch to temporarily prevent the two wafers to be joined. The three spacer elements 15() to 152 between the contacts also exist in the refreshing plate
111周圍。如下文所詳細解釋，將第—晶圓放置於夾盤1U 上’而最初將第二晶圓在三個間隔元件150至152上放置成 β第Ba圓。藉由逐漸地使間隔元件縮回來逐漸地使第 二晶圓與第-晶圓接觸。在使間隔元件中之一或多者縮回 '每操作之後’大體上藉由致動推送器12Q以與在相對 ϋ藉由保持銷130及定位銷140保持之-個或兩個晶圓相 抵來進行對準操作。 ^準操作期間’在晶圓中於晶圓的與推送器120以及 …劫130及定位銷140接觸之彼等部分處施加機械應力。 I62602.doc 201241955 申請人已進行藉由類似於圖2之接合裝置loo之接合裝置 對準晶圓的測試，以便判定導致晶圓中之非均勻變形之未 減輕應力的一或多個來源。申請人已確定，在包含將晶圓 放置成與保持銷相抵及藉由致動定位推送器之一或多個對 準操作之後，仍存在應力且因此存在晶圓側面之變形，且 該變形在對準元件附近之經界定之區中較大。 對準元件附近之變形之該局部化本質上係歸因於如下兩 個事實：相抵於晶圓而施加之外部接觸力之強度在對準元 件（推送器及抵靠元件）處最大，以及晶圓在該等元件附近 不能在支撐件上自由地改變位置。 當藉由對準元件（推送器及/或保持銷及定位銷）中之一者 將接觸力施加至晶圓時，在晶圓與夾盤之接觸表面之間出 現摩擦，藉此產生摩擦學效應。因此在夾盤上於摩擦最大 之區處（亦即，對準元件附件）產生及維持靜電電荷。此等 電荷產生使晶圓保持於夾盤上之局部電場及吸引力，此情 形引起在晶圓中出現局部應力且構成非均勻變形之第一來 源。 此外，藉此在晶圓中產生之機械應力不能被鬆弛，此係 因為晶圓在對準元件附件不能在支撐件上自由地改變位 置。 為此，本發明提議一種接合裝置，其包含一夹盤，該夾 盤具有比待支撐之晶圓之表面積小85%，較佳小6〇%的總 接觸表面積《與晶圓之接觸表面積之減少或不存在較佳處 於對準元件附近m所描述，該夾盤之總接觸表面積 162602.doc 201241955 可由一或多個支樓元件構成’在該一或多個支樓元件上， 意欲與另一晶圓接合之晶圓僅借助重力而自由地停置，亦 即，不使用用於將晶圓固持於夾盤之該一或多個支樓元件 上的系統（諸如，靜電系統或真空器件）。 圖3展示根據本發明之一實施例之接合裝置2〇〇。接合裝 置200包含具備夾盤211之晶圓載體器件21〇，該夾盤211係 藉由呈錄齒形盤之形式且意欲收納待接合在一起之兩個晶 圓中之一者的支撐元件2110構成。推送器22〇及分別由保 持銷230及定位銷240構成之兩個抵靠元件安置於夾盤 周圍圓形區ZC2處，該圓形區zC2對應於待由夾盤支撐之晶 圓的直徑。用於暫時防止待接合在一起之兩個晶圓之間的 接觸之三個間隔元件250至252亦存在於夾盤11丨周圍。 支撐元件2110包括分別安置於推送器22〇、保持銷23〇及 定位銷240附近之三個凹進區域2111、2112及2113。因為 在此等三個對準元件附近存在凹進區域，所以夾盤211在 此等元件周圍預定距離上不具有接觸表面。因此，在涉及 在晶圓與對準元件之間施加接觸力的對準操作期間在對 應於凹進區域2111、2112及2113之位置的區上不存在晶圓 與夾盤2 11之間的摩擦。因此，此情形防止在此等非接觸 區處在晶圓與支撐元件之間形成靜電電荷，此意謂與支樓 兀件211 〇接觸之晶圓在對準元件附近可自由地改變位置且 鬆他由對準元件在其令產生的應力。 在此處所呈現之實施例中，夾盤2 11進一步包括可產生 直徑上相對（亦即，對稱）之作用力/反作用力的三個凹進區 162602.doc 12 201241955 域2114、2115及2116 〇然而，本發明之接合裝置之夹盤 2U的支樓元件211〇可包括僅在對準元件周圍之凹進區域 (諸如，區域2110至2112)。 圖4Α表示根據本發明之另一實施例之接合裝置3〇〇，其 包含具備夹盤31!之晶圓載體器件31〇，該夾盤3ιι係由用 於收納待接合在-起之兩個晶圓中之一者的圓形支樓元件 3110形成。推送器320及分別由保持銷33〇及定位銷34〇構 成之兩個抵靠元件安置於失盤311周圍圓形區處。用於 暫時防止待接合在-起之兩個晶圓之間的接觸之三個間隔 元件350至352亦存在於夾盤311周圍。 在此實施例十，夾盤3110之元件具有直徑A"，該直徑 、為圓形區Zcs之直徑Dm的若干分之一，該直徑^對 應於待由夹盤支撐之晶圓的直徑。 夾盤311進一步包含由實質上在圓形區ZC3處延伸之環形 區域3111構成的第二支撐元件◦如圖化中所說明，環形區 域360具有（例如）數微米之寬度以便最小化此區中與晶 圓之接觸表面積，且具有不同於夾盤311之高度的高度 h m以便能夠適應晶圓之彎曲。 申清人已觀察到’當增強待停置於夾盤上之晶圓之彎曲 時，兩個晶圓之間的接合缺陷（未轉移區（NTZ)、氣泡、空 隙等）之出現得以減少。因此，若待停置於夾盤上之晶圓 具有凹入彎曲’則高度h3丨丨丨將大於高度h川。相反，若待 知置於失盤311上之晶圓具有凸起彎曲，則高度h3⑴將小 於同度h3n ’如圖48中所說明。支撐元件311及/或環形區 162602.doc -13- 201241955 域3111可安裝於活塞上，以便依據晶圓之形狀調整此等兩 個元件之間的高度。 在本發明之接合裝置之此實施例中，環形區域具有僅數 微来之寬度，以便在對準元件附近呈現與晶圓之減少之接 觸表面積’且允許晶圓在對準元件附近自由地改變位置並 鬆他由對準元件產生之應力。 圖5表示根據本發明之另一實施例之接合裝置4〇〇，其包 含具備夾盤411之晶圓載體器件41〇，該夾盤係藉由意欲收 納待接合在一起之兩個晶圓中之一者的圓形支撐元件411〇 構成。推送器420及分別由保持銷430及定位銷44〇構成之 兩個抵靠元件安置於夾盤411周圍圓形區Ζ(：4處。用於暫時 防止待接合在一起之兩個晶圓之間的接觸之三個間隔元件 450至452亦存在於夾盤411周圍。 在此實施例t，支撐元件4110具有直徑〇411，該直徑 Dw小於圓形區ZC4之直徑dZC4，該直徑dZC4對應於待由夾 盤支撐之晶圓的直徑。該直徑仏丨丨可（例如）為8 cm[公分]， 其短於圓形區ZC4之直徑DzC4使得支撐元件411〇與推送器 420及抵靠元件430及440相距4 cm。 在本發明之接合裝置之此實施例中，夾盤與對準元件相 距足夠遠以允許固持於夾盤上之晶圓在對準元件附近局部 地自由改變位置且鬆弛由對準元件產生之應力。 另外，由於支撐元件411〇具有小於圓形區之直徑的直 徑，圆形區之直徑對應於待由夾盤支撑之晶圓之直徑，因 此具有凸起彎曲之晶圓較佳放置於支撐元件411〇上以便增 162602.doc •14· 201241955 強其彎曲且減少兩個晶圓之間的接合缺陷之出現。 圖8Α展示根據本發明之另一實施例之接合裝置，其 包含具備夾盤511之晶圓载體器件51〇，該夾盤係由用於收 納待接合在一起之兩個晶圓中之一者的複數個支撐元件 511〇形成。在該等支揮元件511()中之每—者的末端處，該 等支撐元件5110中之每一者具有（例如）具有在i mm2[平方 毫米]至4 mm2之範圍内之面積的個別接觸表面S5ii〇,且此 等表面分散於圓形區Zcs内，該圓形區Zcs對應於待由夾盤 支撐之晶圓的直徑。 推送器520及分別由保持銷53〇及定位銷54〇構成之兩個 抵靠元件安置於夾盤511周圍圓形區乙以處。用於暫時防止 待接合在一起之兩個晶圓之間的接觸之三個間隔元件55〇 至552亦存在於夾盤511周圍。 對於所有支撐元件5110,該等元件之高度可相同，且該 尚度可不同以便提供藉由具有凸面或凹面形狀之該等元件 構成的夾盤，該凸面或凹面形狀可用以增強晶圓之彎曲且 減少接合缺陷之出現。在此處所描述且如在圖8B中所說明 之貫例中’自圓形區Zcs之中心至此區之周邊，支樓元件 51丨〇之高度減小，藉此產生具有凸面形狀之夾盤。 在本發明之接合裝置之此實施例中，支撐元件之個別表 面積Ssno之總和對應於不大於待支撐之晶圓之表面積的 85%之總接觸表面積。 熟習此項技術者可易於設想用於本發明之接合裝置之夾 盤的其他形狀及/或尺寸，該等其他形狀及/或尺寸可用以 162602.doc 201241955 防止S亥等對準几件周圍預定距離上之晶圓與對準纟件之間 的接觸。 依據待接合在-起之晶圓之直徑來調適本發明之接合装 置之尺寸及（詳言之）安置有對準元件之圓形區的尺寸；詳 =之’》亥等尺寸可具有1〇〇 _、15〇 _、2〇〇 _、 mm或450 mm之直徑。 參看圖6及圖7A至圖7J，接下來為如藉由圓3之接合裝置 進行且根據本發明之接合方法之一實施的兩個晶圓之間的 直接晶圓接合之實例的描述。將包含夾盤21丨之接合裝置 200且更精確而言晶圓載體器件21〇放置於可控制壓力及溫 度之密封腔室令（圖7A至圆未展示），該夾盤211係由 支撐7C件2110、推送器22〇、保持銷23〇及定位銷24〇以及 間隔元件250至252構成。 在圖7A及圖7B中，將第一晶圓或基板2〇放置於接合裝 置200之晶圓載體器件21〇之夾盤211的支撐元件2丨1〇上（步 驟S1)。晶圓20自由地停置於支撐元件211〇上，亦即，僅 借助重力而不使用用於維持晶圓之主動構件（諸如，與夾 盤相關聯之靜電系統或真空器件）。 一旦已將晶圓20固持於支撐元件211〇上（圖7B)，即將用 於暫時防止兩個晶圓之間的接觸之三個間隔元件25〇至乃2 放置於適當位置（步驟S2)。接合裝置221之推送器22〇包括 頭部241。使推送器220在縮回位置與機械對準位置之間移 動，在縮回位置中，該頭部221與晶圓之側面相距一距離 且並不對晶圓施加任何力（如圖7A中所說明），在機械對準 I62602.doc 201241955 位置中’頭部221緊靠晶圓20及30之側面且主要在徑向方 向上對自相對端藉由兩個抵靠銷230及240保持之兩個晶圓 施加對準力，該定位銷240用於與晶圓20及30中之各別凹 口 21及31合作（如圖7D中所說明）。在其對準位置中，推送 器220之頭部221相抵於晶圓而施加力，此意謂晶圓可緊靠 抵靠銷230及240且確保其對準。 接著將晶圓30沈積於間隔元件250至252上，以便定位晶 圓30之下表面或下部面32從而面向晶圓20之上表面22(圖 7C，步驟 S3)。 一旦已將晶圓30置於適當位置，即將推送器220放置於 其機械對準位置中，且推送器220對晶圓施加固持力以與 銷230及240相抵，以便使兩個晶圓20及30第一次對準（圖 7D ’ 步驟 S4)。 以已知方式，已製備（拋光、清潔、疏水/親水處理等）用 於接合之晶圓20及30之各別表面22及32以便允許直接接 合。 在下一操作期間，撤回間隔元件252且接著將推送器22〇 放置於其縮回位置中（圖7E，步驟S5)，此情形使晶圓3〇之 在間隔元件252及固持銷240之位置處的區域落至晶圓2〇 上。 再次將推送器220放置於其對準位置中，以便在撤回仍 存在於兩個晶圓之間的間隔元件（即’此處為間隔元件2 5 〇 及251)時使晶圓對準（圖7F，S6)，晶圓20及30此時經受壓 縮負載（圖7F，步驟S7)。 I62602.doc 17 201241955 接著將推送器220放置於其縮回位置中，以便使晶圓3〇 免於固持成與銷230及240相抵且使晶圓30之下部面32完全 停置於晶圓20之上部面22上（圖7G，步驟S8)。 再次將推送器220放置於其機械對準位置中，以便確保 在起始接合波之傳播之前晶圓20及30經適當對準（圖7H， 步驟S9)。接著將推送器放置於其縮回位置中（圖71，步驟 S10)。 根據本發明，藉由包含支撐元件211〇且可鬆弛由對準元 件在此等操作期間施加之應力的夾盤2丨丨進行上文所描述 之對準步驟S4、S6及S9,該支撐元件2110包括凹進區域 2111 、 2112及2113 〇 在用機械方式對準晶圓之步驟及使其接觸之步驟之後， 進行直接晶圓接合（圖7J’步驟S10)*如圖7J中所說明，可 借助於具備尖筆51之工具50來起始接合波之傳播，該尖筆 5 1可用以用機械方式將接觸點施加至晶圓3〇。有利地（但 非必要地）’控制藉由尖筆5丨對晶圓3〇施加之機械壓力以 便限制接觸點處之變形。如以高度圖解方式在圖7J中所說 明，工具50可包括測力計53 ^尖筆5丨連接至該測力計53且 包含自由末端52，藉由該自由末端52對晶圓30施加機械應 力以便起始兩個晶圓20與30之間的接觸點。藉由知曉工具 5〇與晶圓30之接觸表面積52a的值，有可能藉由控制由該 工具對晶圓施加之負載F(負載=機械壓力χ負載面積）來施 加在1 MPa[百萬帕斯卡]至33.3 Mpa之範圍内的機械壓 力。因此’藉由以此方式限制在起始接觸點期間施加至兩 162602.doc 201241955 個基板中之一者的壓力，在於兩個晶圓之整個接觸表面上 進行直接晶圓接合時，晶圓中產生之非均勻變形得以減 少。借助於測力計53來控制藉由末端52對晶圓3〇施加之負 載。 可由諸如Teflon®、聚矽氧或聚合物之材料產生或用該 材料覆蓋用於與晶圓接觸之負载元件，且更特定而言為其 末端。大體而言，由足夠剛性以能夠按控制方式施加壓力 之材料產生或用該材料覆蓋負載元件之末端。材料太具撓 f生則可變形且產生不精確之接觸表面，且結果產生所施加 壓力之準確性損失。另外，材料太具剛性則可導致在晶圓 表面中形成缺陷（壓痕）。 亦可藉由將腔室中之壓力減少至極低值（通常小於約J 〇 mbar[毫巴])來在晶圓2〇與3〇之間自發地起始接合波之傳 播。 本發明之接合方法適用於組裝與直接接合相容之任何類 型之材料，尤其為諸如發、鍺、玻璃、石英、藍寶石等之 半導體材料。詳言之，待組裝在一起之晶圓可具有i〇〇 mm、150 mm、200 mm、300 mm或450 mm之直徑。該等 晶圓亦可在其大部分表面上或僅在有限區中包括微組件。 本發明之接合方法之一特定（但非排他）領域為藉由在晶 圓或初始基板之表面上形成第一系列微組件來產生三維結 構，該等微組件可能為整個組件及/或僅組件之部分，且 °亥初始基板可能為單層結構（例如，矽層）或多層結構（諸 如’ SOI類型之結構卜藉由光微影借助於光罩來形成微組 162602.doc •19· 201241955 件，該光罩可用以界定用於形成對應於待產生之微組件之 圖案的區。 為進行直接晶圓接合，接著將包括微組件之初始基板之 面定位成面向最終晶圓或基板之面且與最終晶圓或基板之 面接觸。根據本發明，藉由根據本發明之接合裝置進行初 始基板100與最終基板之間的對準之步驟（諸如，上文所描 述之步驟S4' S6&S9)，以便允許晶圓在對準元件附件相 對於夾盤自由地移動。 ,在接合之後’亦即’在接合波在兩個晶圓之間的傳播之 後’在可能已被薄化之初始基板之曝露表面處形成第二微 組件層。第二層之微組件可對應於第一層之微組件之互補 分以便形成完成組件及/或對應於意欲與第一層之微組 件一起起作用之相異組件。為了形成與第一層之内埋微組 件對準的第二層之微組件，使用類似於用以形成微組件之 光罩的光微影光罩β 在一變化中，藉由層之堆叠形成三維結構，每一層係藉 由本發明之組裝方法來轉移且每—層與直接鄰近層對準。 在又一變化中，最終基板自身包括微組件。 ，因為本發明之直接晶圓接合方法，有可能在無非均勻變 形或至少具有變形之減少的情況下將初始基板接合至最終 基板，使得在初始基板至最終基板上之轉移之前及之後均 不再觀察到微組件之顯著偏移。因此’在晶圓之整個表面 上’殘餘偏移可限於小於5〇 nm之值。因此，甚至在初始 基板之轉移之後，亦可能容易地形成與第一層之微組㈣ 162602.doc -20- 201241955 準的第二層之微組件，甚至形成具有極小尺寸（例如， μηι)之彼等微組件。此情形可（例如）用以經由金屬連接件 使存在於兩個層中或同一層之兩個相異面上的微組件互 連’藉此使不良互連之風險減至最小。 結果，本發明之接合方法可用以在晶圓之直接接合期間 限制晶圓之非均勻變形現象。最後，t兩個晶圓均包括微 組件時’ a方法彳限制在電路層至m或至支標基板 上之轉移期間的覆疊現象，且產生極高品質之多層半導體 晶圓。 【圖式簡單說明】 圖1為展示根據先前技術之在直接晶圓接合之後的三維 結構之圖解視圖； 圖2為先前技術接合裝置之圖解透視圖； 圖3為根據本發明之—香 "々實施例的接合裝置之圖解透視 团 · 圃， 圖4A及圖4B分別為根據本發明之另一實施例的接合裝 置之透視圖及截面圖解視圖； 圖5為根據本發明之另―眘 为貫施例的接合裝置之圖解透視 圖6為圖7A至圖7J中所說 法中之步驟之流程圖； 圖7A至圖7J為根據本發明 之圖解視圖；及 明之本發明的直接晶圓接合方 之一實施的直接晶圓接合方法 圖 8A及圖8B分別為根據 本發明之另一實施例的接合裝 162602.doc 201241955 置之透視圖及截面圖解視圖。 【主要元件符號說明】 20 第一晶圓或基板 21 凹口 22 上表面 30 晶圓 31 凹口 32 下表面或下部面 50 工具 51 尖筆 52 自由端 52a 接觸表面積 53 測力計 100 先前技術接合裝置/初始基板 110 晶圓載體器件 111 夾盤 120 推送器 130 保持銷 140 定位銷 150 間隔元件 151 間隔元件 152 間隔元件 200 接合裝置 210 晶圓載體器件 162602.doc •22· 201241955 211 夾盤/鋸齒形盤 220 推送器/對準元件 221 頭部 230 保持銷/抵靠銷/對準元件/抵靠元件 240 定位銷/抵靠銷/固持銷/對準元件/抵靠元件 250 間隔元件 251 間隔元件 252 間隔元件 300 接合裝置 310 晶圓載體器件 311 夾盤 320 推送器 330 保持銷 340 定位銷 350 間隔元件 351 間隔元件 352 間隔元件 400 接合裝置 410 晶圓載體器件 411 夾盤 420 推送器 430 保持銷/抵靠元件 440 定位銷/抵靠元件 450 間隔元件 162602.doc -23- 201241955 451 間隔元件 452 間隔元件 500 三維結構/接合裝置 510 第一晶圓或初始基板/晶圓載體器件 511 微組件/夾盤 512 微組件 513 微組件 514 微組件 515 微組件 516 微組件 517 微組件 518 微組件 519 微組件 520 第二晶圓或最終基板/推送器 521 微組件 522 微組件 523 微組件 524 微組件 525 微組件 526 微組件 527 微組件 528 微組件 529 微組件 530 保持銷 162602.doc -24- 201241955 540 定位銷 550 間隔元件 551 間隔元件 552 間隔元件 2110 支撐元件 2111 凹進區域 2112 凹進區域 2113 凹進區域 2114 凹進區域 2115 凹進區域 2116 凹進區域 3110 圓形支撐元件 3111 環形區域 4110 圓形支撐元件 5110 支撐元件 〇31 1 直徑 〇41 1 直徑 DzC3 直徑 DzC4 直徑 F 負載 h3n 南度 h3 111 高度 ^360 寬度 S5 1 1 0 表面積 162602.doc -25- 201241955 Ζ〇2 圓形區 Zc3 圓形區 Z〇4 圓區 Zc5 圓形區 Δ,, 偏移 △22 偏移 △33 偏移 △44 偏移 ]62602.docAround 111. As explained in detail below, the first wafer is placed on the chuck 1U and the second wafer is initially placed on the three spacer elements 150 to 152 as a β-Ba circle. The second wafer is gradually brought into contact with the first wafer by gradually retracting the spacer elements. Retracting one or more of the spacer elements 'after each operation' substantially by actuating the pusher 12Q against the one or two wafers held by the retaining pin 130 and the locating pin 140 To perform the alignment operation. During the quasi-operation period, mechanical stress is applied in the wafer at the portions of the wafer that are in contact with the pusher 120 and the contact pins 140 and the locating pins 140. I62602.doc 201241955 The Applicant has performed a test to align wafers by a bonding apparatus similar to the bonding apparatus loo of Figure 2 to determine one or more sources of unmitigated stress that cause non-uniform deformation in the wafer. Applicants have determined that after placing the wafer in contact with the retaining pin and by actuating one or more alignment operations of the positioning pusher, there is still stress and thus deformation of the wafer side, and the deformation is Larger in the defined area near the alignment element. This localization of the deformation near the alignment element is essentially due to two facts: the strength of the external contact force applied against the wafer is greatest at the alignment element (the pusher and the abutment element), and the crystal The circle cannot freely change position on the support near the elements. When a contact force is applied to the wafer by one of the alignment elements (the pusher and/or the retaining pin and the positioning pin), friction occurs between the contact surface of the wafer and the chuck, thereby generating tribology effect. Therefore, an electrostatic charge is generated and maintained on the chuck at the region where the friction is greatest (i.e., the alignment component attachment). These charges create a local electric field and attractive force that holds the wafer on the chuck, which causes a local stress in the wafer and constitutes a first source of non-uniform deformation. In addition, the mechanical stress generated in the wafer cannot be relaxed by this because the wafer cannot be freely changed on the support member in the alignment member attachment. To this end, the present invention proposes a bonding apparatus comprising a chuck having a total surface area of 85%, preferably less than 6%, of the surface area of the wafer to be supported. The reduction or absence of a preferred contact surface area ι 602602.doc 201241955 may be formed by one or more branch elements on the one or A wafer bonded wafer is freely parked by gravity only, that is, without using a system for holding the wafer on the one or more branch elements of the chuck (such as an electrostatic system or vacuum device) ). Figure 3 shows a joining device 2 according to an embodiment of the invention. The bonding apparatus 200 includes a wafer carrier device 21A having a chuck 211, which is a support member 2110 in the form of a recorded toothed disk and intended to receive one of two wafers to be joined together Composition. The pusher 22 and the two abutting members respectively constituted by the retaining pin 230 and the positioning pin 240 are disposed at a circular area ZC2 around the chuck, the circular area zC2 corresponding to the diameter of the crystal to be supported by the chuck. Three spacer elements 250 to 252 for temporarily preventing contact between the two wafers to be joined together are also present around the chuck 11A. The support member 2110 includes three recessed regions 2111, 2112, and 2113 disposed adjacent to the pusher 22, the retaining pin 23, and the positioning pin 240, respectively. Because there are recessed areas in the vicinity of the three alignment elements, the chuck 211 does not have a contact surface a predetermined distance around the elements. Therefore, there is no friction between the wafer and the chuck 2 11 at the regions corresponding to the positions of the recessed regions 2111, 2112, and 2113 during the alignment operation involving the application of the contact force between the wafer and the alignment member. . Therefore, this situation prevents electrostatic charges from being formed between the wafer and the support member at such non-contact regions, which means that the wafer in contact with the branch member 211 自由 can freely change position and looseness in the vicinity of the alignment member. He is stressed by the alignment component in its order. In the embodiment presented herein, the chuck 2 11 further includes three recessed regions 162602.doc 12 201241955 domains 2114, 2115 and 2116 that can produce diametrically opposite (i.e., symmetrical) forces/reaction forces. However, the branch elements 211 of the chuck 2U of the engagement device of the present invention may include recessed areas (such as regions 2110 to 2112) only around the alignment elements. 4A shows a bonding apparatus 3A according to another embodiment of the present invention, which includes a wafer carrier device 31A having a chuck 31!, which is used for housing two to be joined A circular branch element 3110 of one of the wafers is formed. The pusher 320 and the two abutting members respectively constituted by the retaining pin 33 and the positioning pin 34 are disposed at a circular area around the lost disc 311. Three spacer elements 350 to 352 for temporarily preventing contact between the two wafers to be bonded are also present around the chuck 311. In this embodiment 10, the element of the chuck 3110 has a diameter A" which is a fraction of the diameter Dm of the circular zone Zcs which corresponds to the diameter of the wafer to be supported by the chuck. The chuck 311 further includes a second support member comprised of an annular region 3111 extending substantially at the circular zone ZC3, as illustrated in the figure, the annular region 360 having a width of, for example, a few microns to minimize this zone The surface area of contact with the wafer and having a height hm different from the height of the chuck 311 is capable of adapting to the bending of the wafer. Shen Qingren has observed that the occurrence of joint defects (non-transfer zones (NTZ), bubbles, voids, etc.) between the two wafers is reduced when the bending of the wafer to be stopped on the chuck is enhanced. Therefore, if the wafer to be placed on the chuck has a concave curvature, the height h3 丨丨丨 will be greater than the height h. Conversely, if the wafer to be placed on the lost disk 311 has a convex curvature, the height h3(1) will be less than the same degree h3n' as illustrated in FIG. Support member 311 and/or annular region 162602.doc -13- 201241955 Domain 3111 can be mounted on the piston to adjust the height between the two components depending on the shape of the wafer. In this embodiment of the bonding apparatus of the present invention, the annular region has a width of only a few micrometers to present a reduced contact surface area with the wafer near the alignment element and allows the wafer to freely change near the alignment element. Position and loosen the stress he creates from the alignment elements. Figure 5 shows a bonding apparatus 4A according to another embodiment of the present invention, comprising a wafer carrier device 41 having a chuck 411, which is intended to receive two wafers to be bonded together One of the circular support members 411 is formed. The pusher 420 and the two abutting members respectively composed of the retaining pin 430 and the positioning pin 44〇 are disposed at a circular area (: 4) around the chuck 411 for temporarily preventing the two wafers to be joined together. The three spacer elements 450 to 452 of the intervening contact are also present around the chuck 411. In this embodiment t, the support member 4110 has a diameter 〇 411 which is smaller than the diameter dZC4 of the circular zone ZC4, which diameter dZC4 corresponds to The diameter of the wafer to be supported by the chuck. The diameter 仏丨丨 can be, for example, 8 cm [cm], which is shorter than the diameter DzC4 of the circular zone ZC4 such that the support member 411 〇 and the pusher 420 and the abutment member 430 and 440 are 4 cm apart. In this embodiment of the bonding apparatus of the present invention, the chuck is spaced sufficiently far from the alignment element to allow the wafer held on the chuck to locally freely change position and relax near the alignment element. The stress generated by the alignment element. In addition, since the support member 411 has a diameter smaller than the diameter of the circular portion, the diameter of the circular portion corresponds to the diameter of the wafer to be supported by the chuck, and thus has a convex curved crystal. The circle is preferably placed on the support member 411〇上增增162602.doc •14·201241955 Strongly bends and reduces the occurrence of joint defects between the two wafers. FIG. 8A shows a bonding apparatus according to another embodiment of the present invention, which includes a chuck 511. a wafer carrier device 51, the chuck being formed by a plurality of support members 511 for receiving one of two wafers to be joined together. In the support members 511() At each end of the support member, each of the support members 5110 has, for example, an individual contact surface S5ii〇 having an area in the range of i mm 2 [mm 2 ] to 4 mm 2 , and the surfaces are dispersed In the circular zone Zcs, the circular zone Zcs corresponds to the diameter of the wafer to be supported by the chuck. The pusher 520 and the two abutting elements respectively composed of the retaining pin 53〇 and the positioning pin 54〇 are placed on the chuck. 511 is surrounded by a circular area B. Three spacer elements 55A to 552 for temporarily preventing contact between the two wafers to be joined together are also present around the chuck 511. For all the supporting elements 5110, The height of the components can be the same, and the degree can be different Providing a chuck constructed of such elements having a convex or concave shape that can be used to enhance bending of the wafer and reduce the occurrence of joint defects. As described herein and as illustrated in Figure 8B In the example, the height of the branch member 51 is reduced from the center of the circular zone Zcs to the periphery of the zone, thereby producing a chuck having a convex shape. In this embodiment of the joint device of the present invention, the support member The sum of the individual surface areas Ssno corresponds to no more than 85% of the total contact surface area of the surface area of the wafer to be supported. Other shapes and/or sizes of the chuck for the joining apparatus of the present invention are readily contemplated by those skilled in the art. These other shapes and/or sizes may be used to 162602.doc 201241955 to prevent contact between the wafer and the alignment element at a predetermined distance around several pieces. Depending on the diameter of the wafer to be bonded, the size of the bonding device of the present invention and (in detail) the size of the circular region in which the alignment elements are placed; 〇_, 15〇_, 2〇〇_, mm or 450 mm diameter. Referring to Figures 6 and 7A through 7J, a description will now be given of an example of direct wafer bonding between two wafers as performed by a bonding apparatus of the circle 3 and implemented in accordance with one of the bonding methods of the present invention. The bonding device 200 including the chuck 21 and more precisely the wafer carrier device 21 is placed in a seal chamber chamber (Fig. 7A to circle not shown) capable of controlling pressure and temperature, the chuck 211 being supported by 7C The member 2110, the pusher 22, the retaining pin 23 and the positioning pin 24, and the spacer members 250 to 252 are formed. In Figs. 7A and 7B, the first wafer or substrate 2 is placed on the support member 2'' of the chuck 211 of the wafer carrier device 21 of the bonding device 200 (step S1). The wafer 20 is free to rest on the support member 211, i.e., without the use of gravity, without the use of active components for maintaining the wafer (such as electrostatic systems or vacuum devices associated with the chuck). Once the wafer 20 has been held on the support member 211 (Fig. 7B), the three spacer members 25 to 2 for temporarily preventing contact between the two wafers are placed in position (step S2). The pusher 22 of the engagement device 221 includes a head 241. The pusher 220 is moved between a retracted position and a mechanically aligned position. In the retracted position, the head 221 is at a distance from the side of the wafer and does not exert any force on the wafer (as illustrated in Figure 7A). In the position of the mechanical alignment I62602.doc 201241955, the 'head 221 abuts the sides of the wafers 20 and 30 and is mainly held in the radial direction from the opposite ends by the two abutment pins 230 and 240. The wafer applies an alignment force that cooperates with the respective recesses 21 and 31 in the wafers 20 and 30 (as illustrated in Figure 7D). In its aligned position, the head 221 of the pusher 220 applies a force against the wafer, which means that the wafer can abut against the pins 230 and 240 and ensure alignment. Wafer 30 is then deposited over spacer elements 250-252 to position lower or lower surface 32 of wafer 30 to face upper surface 22 of wafer 20 (Fig. 7C, step S3). Once the wafer 30 has been placed in position, the pusher 220 is placed in its mechanically aligned position, and the pusher 220 applies a holding force to the wafer to offset the pins 230 and 240 to enable the two wafers 20 and 30 first alignment (Fig. 7D 'Step S4). In a known manner, the various surfaces 22 and 32 of the bonded wafers 20 and 30 have been prepared (polished, cleaned, hydrophobic/hydrophilic, etc.) to allow for direct bonding. During the next operation, the spacer element 252 is withdrawn and then the pusher 22A is placed in its retracted position (Fig. 7E, step S5), which causes the wafer 3 to be placed at the location of the spacer element 252 and the retaining pin 240. The area falls on the wafer 2 。. The pusher 220 is again placed in its aligned position to align the wafer when withdrawing the spacer elements still present between the two wafers (ie, here the spacer elements 2 5 〇 and 251) 7F, S6), wafers 20 and 30 are now subjected to a compressive load (Fig. 7F, step S7). I62602.doc 17 201241955 Next, the pusher 220 is placed in its retracted position so that the wafer 3 is prevented from being held against the pins 230 and 240 and the lower surface 32 of the wafer 30 is completely parked on the wafer 20 On the upper surface 22 (Fig. 7G, step S8). The pusher 220 is again placed in its mechanically aligned position to ensure proper alignment of the wafers 20 and 30 prior to the initiation of the propagation of the bonding waves (Fig. 7H, step S9). The pusher is then placed in its retracted position (Fig. 71, step S10). According to the invention, the alignment steps S4, S6 and S9 described above are carried out by means of a chuck 2 comprising a support element 211 and which can relax the stress applied by the alignment element during such operations, the support element 2110 includes recessed regions 2111, 2112, and 2113. After the step of mechanically aligning the wafers and contacting them, direct wafer bonding is performed (FIG. 7J 'Step S10)* as illustrated in FIG. 7J. The propagation of the bonding wave is initiated by means of a tool 50 having a stylus 51 which can be used to mechanically apply a contact point to the wafer 3. Advantageously, but not necessarily, the mechanical pressure exerted on the wafer 3 by the stylus 5 控制 is controlled to limit the deformation at the contact point. As illustrated in FIG. 7J in a highly schematic manner, the tool 50 can include a dynamometer 53. The stylus 5 丨 is coupled to the dynamometer 53 and includes a free end 52 by which the wafer 30 is mechanically applied. The stress is such that the point of contact between the two wafers 20 and 30 is initiated. By knowing the value of the contact surface area 52a of the tool 5 〇 with the wafer 30, it is possible to apply at 1 MPa [megapascals] by controlling the load F (load = mechanical pressure χ load area) applied to the wafer by the tool. ] Mechanical pressure in the range of 33.3 Mpa. Therefore, by limiting the pressure applied to one of the two 162602.doc 201241955 substrates during the initial contact point in this way, in the wafer, the direct wafer bonding is performed on the entire contact surface of the two wafers. The resulting non-uniform deformation is reduced. The load applied to the wafer 3 by the tip 52 is controlled by means of a load cell 53. The load element for contact with the wafer, and more particularly its end, may be produced from or covered by a material such as Teflon®, polyfluorene or a polymer. In general, the end of the load element is created by or covered with a material that is sufficiently rigid to apply pressure in a controlled manner. The material is too flexible and can deform and create inaccurate contact surfaces, and as a result, the accuracy of the applied pressure is lost. In addition, the material is too rigid to cause defects (indentations) in the surface of the wafer. The propagation of the bonding wave can also spontaneously initiate between the wafers 2〇 and 3〇 by reducing the pressure in the chamber to a very low value (typically less than about J mbar [mbar]). The joining method of the present invention is suitable for assembling any type of material compatible with direct bonding, especially semiconductor materials such as hair, enamel, glass, quartz, sapphire, and the like. In particular, the wafers to be assembled may have diameters of i〇〇 mm, 150 mm, 200 mm, 300 mm or 450 mm. The wafers may also include microcomponents on most of their surface or only in limited areas. One particular (but not exclusive) aspect of the bonding method of the present invention is to create a three-dimensional structure by forming a first series of micro-components on the surface of a wafer or initial substrate, which may be the entire component and/or only components Part, and the initial substrate may be a single layer structure (for example, germanium layer) or a multilayer structure (such as 'SOI type structure by microphotographing by means of a photomask to form a micro-group 162602.doc •19·201241955 The mask can be used to define a region for forming a pattern corresponding to the microcomponent to be produced. For direct wafer bonding, the surface of the initial substrate including the microcomponent is then positioned to face the final wafer or substrate. And contacting the surface of the final wafer or substrate. According to the present invention, the step of initializing the alignment between the substrate 100 and the final substrate by the bonding apparatus according to the present invention (such as the step S4' S6 & described above) S9), in order to allow the wafer to freely move relative to the chuck in the alignment component attachment. After the bonding, that is, after the propagation of the bonding wave between the two wafers, Forming a second micro-component layer at the exposed surface of the thinned initial substrate. The second layer of micro-components may correspond to complementary portions of the first layer of micro-components to form a completed component and/or corresponding to the intended first layer A dissimilar component that functions together. To form a second layer of micro-components aligned with the buried micro-components within the first layer, a photolithographic mask β similar to the photomask used to form the micro-components is used. In a variation, a three-dimensional structure is formed by stacking of layers, each layer being transferred by the assembly method of the present invention and each layer being aligned with the immediate adjacent layer. In still another variation, the final substrate itself includes micro-components. In the direct wafer bonding method of the invention, it is possible to bond the initial substrate to the final substrate without non-uniform deformation or at least a reduction in deformation, so that no microscopic observation is observed before and after the transfer from the initial substrate to the final substrate Significant offset of the component. Therefore 'the residual offset on the entire surface of the wafer can be limited to a value less than 5 〇 nm. Therefore, even after the transfer of the initial substrate, it is possible It is easy to form a micro-component of the second layer with the micro-layer of the first layer (4) 162602.doc -20- 201241955, and even form micro-components having extremely small dimensions (for example, μηι). This situation can be used, for example, Interconnecting micro-components present in two layers or on two different faces of the same layer via a metal connector' thereby thereby minimizing the risk of poor interconnection. As a result, the bonding method of the present invention can be used in Limiting the non-uniform deformation of the wafer during direct bonding of the wafer. Finally, when both wafers include micro-components, the method is limited to the overlap phenomenon during the transition from the circuit layer to m or to the support substrate. And producing a very high quality multilayer semiconductor wafer. [Schematic Description] FIG. 1 is a diagrammatic view showing a three-dimensional structure after direct wafer bonding according to the prior art; FIG. 2 is a schematic perspective view of a prior art bonding apparatus. 3 is a schematic perspective view of a joining device of an embodiment according to the present invention, and FIG. 4A and FIG. 4B are respectively a perspective view and a cross section of a joining device according to another embodiment of the present invention. Figure 5 is a schematic perspective view of a joining device in accordance with another embodiment of the present invention. Figure 6 is a flow chart of the steps in the method of Figures 7A through 7J; Figures 7A through 7J are in accordance with the present invention. FIG. 8A and FIG. 8B are perspective views of a bonding apparatus 162602.doc 201241955 according to another embodiment of the present invention, respectively, and a direct wafer bonding method implemented by one of the direct wafer bonding methods of the present invention. A schematic view of the section. [Main component symbol description] 20 First wafer or substrate 21 Notch 22 Upper surface 30 Wafer 31 Notch 32 Lower surface or lower surface 50 Tool 51 Tip pen 52 Free end 52a Contact surface area 53 Dynamometer 100 Prior art bonding Device/Initial Substrate 110 Wafer Carrier Device 111 Chuck 120 Pusher 130 Retaining Pin 140 Locating Pin 150 Spacer Element 151 Spacer Element 152 Spacer Element 200 Bonding Device 210 Wafer Carrier Device 162602.doc • 22· 201241955 211 Chuck/Sawtooth Disk 220 Pusher/Alignment Element 221 Head 230 Hold Pin/Abutment Pin/Alignment Element/Abutment Element 240 Locating Pin/Abutment Pin/Retaining Pin/Alignment Element/Abutment Element 250 Spacer Element 251 Spacer Element 252 Spacer Element 300 Bonding Device 310 Wafer Carrier Device 311 Chuck 320 Pusher 330 Hold Pin 340 Locating Pin 350 Spacer Element 351 Spacer Element 352 Spacer Element 400 Bonding Device 410 Wafer Carrier Device 411 Chuck 420 Pusher 430 Hold Pin / abutment element 440 locating pin / abutment element 450 spacer element 162602.doc -23- 201241955 451 spacer element 452 Spacer Element 500 Three-Dimensional Structure/Joining Device 510 First Wafer/Initial Substrate/Wafer Carrier Device 511 Micro-Component/Chuck 512 Micro-Component 513 Micro-Component 514 Micro-Component 515 Micro-Component 516 Micro-Component 517 Micro-Component 518 Micro-Component 519 Micro Component 520 Second Wafer or Final Substrate/Pusher 521 Microcomponent 522 Microcomponent 523 Microcomponent 524 Microcomponent 525 Microcomponent 526 Microcomponent 527 Microcomponent 528 Microcomponent 529 Microcomponent 530 Hold Pin 162602.doc -24- 201241955 540 Locating pin 550 spacer element 551 spacer element 552 spacer element 2110 support element 2111 recessed area 2112 recessed area 2113 recessed area 2114 recessed area 2115 recessed area 2116 recessed area 3110 circular support element 3111 annular area 4110 circular support Element 5110 Support element 〇31 1 Diameter 〇41 1 Diameter DzC3 Diameter DzC4 Diameter F Load h3n South degree h3 111 Height ^360 Width S5 1 1 0 Surface area 162602.doc -25- 201241955 Ζ〇2 Round zone Zc3 Round zone Z 〇4 circular zone Zc5 circular zone Δ, offset △22 offset △33 offset △44 offset]62602. 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