TW201240335A - Band-pass filter device and inductive module - Google Patents
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201240335 、發明說明: 【發明所屬之技術領域】 本發明是有關於一種裝置及模組,特別是指一種帶通 濾波裝置及電感性模組。 【先前技術】 具有電感及電容的帶通濾波裝置被應用於無線電類電 子產品、消費性電子產品中,以作為該產品之前端來過濾 輸入信號,但大多的帶通濾波裝置並不是用積體電路來實 現,因為現有積體電路化的電感,在CMOS製程上具有功 率耗損太大的問題,造成電感之品質因子(quality facr〇r) 較低,因此,在積體電路中,常利用主動式元件產生負電 阻,來補償電感的電阻性損耗,來提高電感的品質因子。 如圖 1 所示’於文獻「T. Soorapanth and S. S. Wong, “A0-dBIL2140±30MHzbandpassfilterutilizingQ- enhanced spiral inductors in standard CMOS,'5 IEEE J. Solid-201240335, invention description: TECHNICAL FIELD The present invention relates to a device and a module, and more particularly to a band pass filter device and an inductive module. [Prior Art] Bandpass filter devices with inductors and capacitors are used in radio electronics and consumer electronics to filter input signals at the front end of the product, but most bandpass filter devices do not use integrated components. The circuit is realized because the existing integrated circuitized inductor has a problem that the power consumption is too large in the CMOS process, and the quality factor (quality facr〇r) of the inductor is low. Therefore, in the integrated circuit, the active is often utilized. The device generates a negative resistance to compensate for the resistive loss of the inductor to improve the quality factor of the inductor. As shown in Figure 1 'in the literature' T. Soorapanth and S. S. Wong, "A0-dBIL2140 ± 30MHz bandpassfilterutilizing Q-reinforced spiral inductors in standard CMOS, '5 IEEE J. Solid-
State Circuits,vol. 37, no. 5, pp. 579-586, May 2002.」提出 一種以積體電路來實現且具有高品質因子的習知帶通濾波 裝置1 ’適用於接收一輸入信號Vin且進行濾波以產生一濾 波信號V〇,且該帶通濾波裝置1包含:第一至第三偏壓電 感RFC1〜RFC3、第一至第三電容C1〜C3、一輸入電容Cin 、一輸出電容Co,及三個電感性模組11〜13。 第一至第三偏壓電感RFC1〜RFC3各自具有一接收一偏 壓電壓VB的第一端及一第二端。 第一至第三電容C1〜C3各自具有一第一端及一接地的 201240335 第二端’且該第一至第三電s C1〜C3之第一端分別電連接 於該第一至第三偏壓電感RFC 1〜RFC3之第二端。 該輸入電容Cin具有一接收該輸入電壓vin的第一端及 一電連接於該第一偏壓電感RFC1之第二端的第二端。 該輸出電容Co具有一提供該濾波信號v〇的第一端, 及一接地的第二端。 該三電感性模組11〜13各自具有一輸入端及一輸出端 〇 該二電感性模組11、12、13的輸入端分別電連接於該 第一偏壓電感RFC1之第二端、該第二偏壓電感RFC2之第 二端、該第三偏壓電感RFC3之第二端。該三電感性模組 11〜13的輸出端分別電連接於該第二偏壓電感RFC2之第二 端、該第三偏壓電感RFC3之第二端、該輸出電容之第 一端。 每一電感性模組11〜13具有一變壓器T、一電晶體14 ,及一電容C。該變壓器τ具有一個一次側電感L丨及一個 二次側電感L2,且該一次及二次側電感li ' L2、電晶體 14,及電容C以回授的方式連接而使每一電感性模組丨丨〜^ 之輸入端的一輸入阻抗Zin (參閱圖2)產生負電阻效應, 以使該電感性模組11等效成為一具有高品質因子的半被動 式電感’又該輸入阻抗Zin如式(1 )所示: Μ X gm^ 1State Circuits, vol. 37, no. 5, pp. 579-586, May 2002." A conventional bandpass filtering device 1' implemented in an integrated circuit and having a high quality factor is adapted to receive an input signal Vin And filtering to generate a filtered signal V〇, and the band pass filtering device 1 includes: first to third bias inductors RFC1 RFC1 to RFC3, first to third capacitors C1 to C3, an input capacitor Cin, and an output. Capacitor Co, and three inductive modules 11 to 13. The first to third bias inductors RFC1 to RFC3 each have a first end and a second end that receive a bias voltage VB. The first to third capacitors C1 - C3 each have a first end and a grounded 201240335 second end ' and the first ends of the first to third electric s C1 - C3 are electrically connected to the first to third respectively The second end of the bias inductors RFC 1 to RFC3. The input capacitor Cin has a first end receiving the input voltage vin and a second end electrically connected to the second end of the first bias inductor RFC1. The output capacitor Co has a first end that provides the filtered signal v〇 and a grounded second end. Each of the three inductive modules 11 to 13 has an input end and an output end. The input ends of the two inductive modules 11 , 12 and 13 are electrically connected to the second end of the first bias inductor RFC1, respectively. The second end of the second bias inductor RFC2 and the second end of the third bias inductor RFC3. The output ends of the three inductive modules 11 to 13 are electrically connected to the second end of the second bias inductor RFC2, the second end of the third bias inductor RFC3, and the first end of the output capacitor. Each of the inductive modules 11 to 13 has a transformer T, a transistor 14, and a capacitor C. The transformer τ has a primary side inductance L丨 and a secondary side inductance L2, and the primary and secondary side inductances li ' L2, the transistor 14 , and the capacitance C are connected in a feedback manner to make each inductive mode An input impedance Zin (see FIG. 2) at the input of the group 丨丨~^ generates a negative resistance effect, so that the inductive module 11 is equivalent to a semi-passive inductor having a high quality factor, and the input impedance Zin is (1) shown: Μ X gm^ 1
Zm = (R'—7Γ-) +……式(1)Zm = (R'—7Γ-) +... (1)
L C〇C 其中’參數R!是該一次側電感L1的寄生電阻值,參L C〇C where 'parameter R! is the parasitic resistance value of the primary side inductor L1,
4 S 201240335 數M是該-次與二次側電感L1、L2之間的互感值,參數 gm疋該電日日體14的轉導值(transc〇nductance),參數[丨是 °亥次側電感L1的電感值,參數C是該電容c的電容值, 參數ω疋角頻率’又該電感性模組u之自振頻率為:在低 頻段期間’有一自振頻率為參數c決定,且在高頻段期間 ’另有-自振頻率為整體佈局所產生的寄生電容所決定。 但是習知的電感性模.组u及帶通遽波裝置i具有以下 缺點: 1_該變壓器T是以該一次侧電感L1和二次側電感L2 來實現,需要較大的晶片面積,導致成本增加。 2·由式(1)的虛部可知該電感性模組u從直流到自振 頻率的低頻段期間,虛部為負值,因此呈電容性,而在超 過自振頻率後的高頻段才呈電感十生,使得可用頻段範圍受 到限制。 3.由式(1)可知該電感性模組u作為等效電感只有相 關於該一次側電感L1之電感值,而無關於該二次側電感L2 之電感值,導致利用率低。 4_由式(1)的實部可知該電感性模組u之負電阻值的 大小只由(Mxgm/C)提供,將導致較高的功率耗損。 5. 該帶通濾波裝置1,還額外需要偏壓電感rfc卜 ,來提供直流的偏壓,因此更增加帶通濾波裝置丨的硬體 成本。 6. 該帶通濾波裝置的第一至第三電容C1〜C3大小無法 動態調整,導致其頻率響應固定,而使用途受到限制。 201240335 【發明内容】 因此,本發明之第一目的,即在提供一種降低成本、 可用頻段範圍廣、高利用率、低功率耗損的帶通濾波裝置 0 該帶通濾波裝置,適用於接收一輸入信號且予以濾波 以產生一濾波信號’且該帶通濾波裝置包含: 一輸入端,用於接收該輸入信號; 一輸出端,用於提供該輸出信號; 一電容模組,電連接於該帶通據波裝置的輸入端與輸 出4之間,且該電谷模組包括至少二個串聯的電容丨及 至少一個電感性模組,具有: 一第一端,電連接於該二電容之間的一共同接點; 一接地的第二端; 电埂接於該電感性模組之第一 端的第-端、-電連接於該電感性模組之第二端的第 :-位於該抽頭式電感的第一及第二端間的一中間抽:端 ^ W α π 乐一端、一 Φ :於該抽頭式電感之中間抽頭端的第二端,及—控:端: 回授電容,電連接於該電晶 電感的第一端之間 體之控制端和該抽 頭式 201240335 一抽頭式電感,具有_第—端、—接地的第二端 -位於該抽頭式電感的第—及第二端間的一中間抽頭端; 一電晶體’具有-接收-第-偏壓的第-端、 接於該抽頭式電感之中間抽頭端的第二端,及_控制端; 及 一回授電纟’電連接於該電晶體之控制端和該抽頭式 電感的第一端之間。 ^ 【實施方式】 有關本發明之前述及其他技術内容、特點與功效,在 以下配5參考圖式之—個較佳實施例的詳細說明中將可 清楚的呈現。 如圖3所示,本發明帶通濾波裝置之較佳實施例,適 用於接收一輸入信號且予以濾波以產生一濾波信號且該 帶通濾波裝置包含:一用於接收該輸入信號Vin的輸入端、 一用於提供該輸出信號Vo的輸出端、一電容模組2、二個 電感性模組3,及一可變電容模組4。 <電容模組> 電谷模組3電連接於該帶通渡波裝置的輸入端與輸出 端之間以提供一等效電容值,且該電容模組3包括三個串 聯的電容,在本實施例中,該三個串聯的電容分別是一輸 入電容Cin、一耦合電容cb,及一輸出電容Co。 輸入電容Cin具有一電連接於該帶通濾波裝置的輸入端 以接收該輸入信號的第一端,及一第二端。 麵合電容Cb具有一電連接於該輸入電容Cin之第二端 201240335 的第一端,及一第二端。 輸出電容Co具有一電連接於該耦合電容Cb之第二端 的第一端,及一電連接於該帶通濾波裝置的輸出端以提供 該濾波信號的第二端。 <電感性模組> 該二電感性模組3各自具有一電連接於該電容模組2 的第一端及一接地的第二端,該二電感性模組3的第一端 分別電連接於該輸入電容Cin之第二端、該耦合電容cb之 第二端,且每一電感性模組3具有一抽頭式電感TL、一電 晶體M0S、二個旁路(bypass)電容C1、C2、一回授電容 Cf,及一電阻r。 該抽頭式電感TL具有一電連接於該電感性模組3之第 一端的第一端P1、一電連接於該電感性模組3之第二端的 第二端P3、一位於該抽頭式電感的第一及第二端中間的一 中間抽頭端P2、_第一部L1及一第二部L2。該抽頭式電 感TL的第一部電連接於該抽頭式電感TL之第一端?1與中 間抽頭端P2之間。該抽頭式電感TL的第二部電連接於該 抽頭式電感TL之第二端P3與中間抽頭端p2之間。 一該電晶體M0S具有一接收一第一偏壓¥1的第一端、 -電?接於該抽頭式電感TL之中間抽頭端的第二端,及一 控制端。在本實施例中,該電晶體購s 體場效電晶體’該第—端是沒極,該第 制端相極。 &祕,該控 β亥電阻R具有—接收-第二偏壓V2的第—端,及一電 201240335 連接於該電晶體MOS之控制端的第二端。 該回授電容Cf電連接於該電晶體m〇S之控制端和該 抽頭式電感TL的第一端之間。 該二旁路電容C1、C2分別電連接於該電晶體M〇s之 第一端與地之間' 該電阻R之第一端與地之間。 又該抽頭式電感TL的第一端與第二端之間的等效阻抗 值Zin (參閱圖4)包括一實部及一虛部,如式(?)所示, 其中該實部提供-等效負阻抗值、而虛部提供—等效電感 值: Ζίη4 S 201240335 The number M is the mutual inductance value between the secondary and secondary side inductors L1 and L2, and the parameter gm is the transconductance value of the electric solar body 14 (transc〇nductance), and the parameter [丨 is the angle of the second side Inductance value of the inductor L1, the parameter C is the capacitance value of the capacitor c, the parameter ω corner frequency 'the self-vibration frequency of the inductive module u is: during the low frequency band, 'there is a natural frequency is determined by the parameter c, and During the high frequency band, 'other-self-vibration frequency is determined by the parasitic capacitance generated by the overall layout. However, the conventional inductive mode group u and the band pass chopper device i have the following disadvantages: 1_ The transformer T is realized by the primary side inductance L1 and the secondary side inductance L2, requiring a large wafer area, resulting in Increased costs. 2. From the imaginary part of equation (1), it can be seen that during the low frequency band of the inductive module u from the direct current to the natural frequency, the imaginary part is negative, so it is capacitive, and only after the high frequency band exceeds the natural frequency. Inductive ten generations, so that the available frequency range is limited. 3. It can be seen from the formula (1) that the inductive module u as the equivalent inductance has only the inductance value of the primary side inductance L1, and the inductance value of the secondary side inductance L2 is not related, resulting in low utilization. 4_ From the real part of equation (1), it is known that the magnitude of the negative resistance of the inductive module u is only provided by (Mxgm/C), which will result in higher power consumption. 5. The band pass filter device 1 additionally requires a bias inductor rfc to provide a DC bias voltage, thereby increasing the hardware cost of the band pass filter device. 6. The size of the first to third capacitors C1 to C3 of the band-pass filter device cannot be dynamically adjusted, resulting in a fixed frequency response and limited use. 201240335 SUMMARY OF THE INVENTION Therefore, the first object of the present invention is to provide a band pass filtering device 0 that reduces cost, wide available frequency range, high utilization rate, and low power consumption. The band pass filtering device is suitable for receiving an input. Signaling and filtering to generate a filtered signal 'and the band pass filtering device comprises: an input for receiving the input signal; an output for providing the output signal; a capacitor module electrically connected to the band Between the input end of the wave device and the output 4, and the electric valley module includes at least two capacitors connected in series and at least one inductive module, having: a first end electrically connected between the two capacitors a common contact; a grounded second end; a first end electrically connected to the first end of the inductive module, and a second end electrically connected to the second end of the inductive module: - the tap An intermediate pumping between the first and second ends of the inductor: the end ^ W α π, one end, a Φ: the second end of the tap end of the tapped inductor, and the control terminal: the feedback capacitor, the electric Connected to the electro-crystalline inductor a control end between the end and the taper type 201240335 one-tap inductor having a _th-end, a grounded second end - a middle tap end between the first and second ends of the tapped inductor; a transistor having a first end of a receive-bias-bias, a second end connected to a center tap end of the tapped inductor, and a control terminal; and a control circuit electrically connected to the transistor Between the end and the first end of the tapped inductor. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. As shown in FIG. 3, a preferred embodiment of the bandpass filtering device of the present invention is adapted to receive an input signal and filter to generate a filtered signal and the bandpass filtering device includes: an input for receiving the input signal Vin An output terminal for providing the output signal Vo, a capacitor module 2, two inductive modules 3, and a variable capacitor module 4. <Capacitor Module> The electric valley module 3 is electrically connected between the input end and the output end of the band pass wave device to provide an equivalent capacitance value, and the capacitor module 3 includes three capacitors connected in series. In this embodiment, the three series capacitors are an input capacitor Cin, a coupling capacitor cb, and an output capacitor Co. The input capacitor Cin has a first end electrically connected to the input of the band pass filtering device to receive the input signal, and a second end. The surface capacitor Cb has a first end electrically connected to the second end 201240335 of the input capacitor Cin, and a second end. The output capacitor Co has a first end electrically connected to the second end of the coupling capacitor Cb, and a second end electrically connected to the output of the band pass filtering means to provide the filtered signal. <Inductive Modules> The two inductive modules 3 each have a first end electrically connected to the capacitor module 2 and a grounded second end, and the first ends of the two inductive modules 3 are respectively Electrically connected to the second end of the input capacitor Cin, the second end of the coupling capacitor cb, and each inductive module 3 has a tapped inductor TL, a transistor MOS, and two bypass capacitors C1 , C2, a feedback capacitor Cf, and a resistor r. The tapped inductor TL has a first end P1 electrically connected to the first end of the inductive module 3, a second end P3 electrically connected to the second end of the inductive module 3, and a tapped type A middle tap end P2, a first portion L1 and a second portion L2 in the middle of the first and second ends of the inductor. The first portion of the tapped inductor TL is electrically coupled to the first end of the tapped inductor TL? 1 is between the intermediate tap end P2. The second portion of the tapped inductor TL is electrically coupled between the second terminal P3 of the tapped inductor TL and the intermediate tap terminal p2. A transistor M0S has a first end that receives a first bias voltage of ¥1, and is electrically charged. Connected to the second end of the center tap end of the tapped inductor TL, and a control terminal. In this embodiment, the transistor is s-field-effect transistor, the first end is a pole, and the terminal is pole-phase. & secret, the controlled beta-resistor R has a first end of the receiving-second bias voltage V2, and a second terminal connected to the control terminal of the transistor MOS. The feedback capacitor Cf is electrically connected between the control terminal of the transistor m〇S and the first terminal of the tapped inductor TL. The two bypass capacitors C1 and C2 are electrically connected between the first end of the transistor M〇s and the ground between the first end of the resistor R and the ground. The equivalent impedance value Zin (see FIG. 4) between the first end and the second end of the tapped inductor TL includes a real part and an imaginary part, as shown by the formula (?), wherein the real part provides - Equivalent negative impedance value, and imaginary part provides - equivalent inductance value: Ζίη
(W Μ gm gm(W Μ gm gm
CC
CC
) + jc〇(L'+L1+2M + Mm2i3i coC 式(2) ‘ "a \热神碩式電感TX之第一 第二:U、L2的等效串聯電阻值、參數。是 的電容值、M是抽頭式電感几之第—及第二部 之間的互感值、gm是$雷 T v g疋°亥電曰曰體M〇s的轉導值、泉動Γ) + jc〇(L'+L1+2M + Mm2i3i coC (2) ' "a \The first and second of the thermal god-type inductor TX: the equivalent series resistance value and parameter of U and L2. The value, M is the number of tapped inductors - and the mutual inductance between the second part, gm is the transduction value of the thre T vg 疋 亥 曰曰 曰曰 、 M 〇 、
刀別是該抽頭式電感TL之第— ^數LI :,又該電感性模組3之自振頻率 的電 佈局所產生的寄生電容所決定。 _間’為整 <可變電容模組> 可變電容模組5具有—接收一 -電連接於該輸入電容Cln之第二端的T 的輸入端 連接於該麵合電容Cb ^端,及一写 而的第-輸出端’且該可變f 201240335 容模組5根據該調整電壓Vc的變化而於該可變電容模組5 的第一及第二輸出端之間提供一大小相關於該調整電壓VC 的調變電容值’來改變該帶通濾波裝置的中心頻率(center frequency )及頻率響應,其中,該調變電容值與該調整電 壓Vc之間的關係式如式(3 )所示,而該中心頻率如式(4 )是相關於該可變電容模組5之等效電容值、該二電感性 模組3的等效電感值,及該調變電容值。The knife is the first of the tapped inductor TL - the number LI is determined by the parasitic capacitance generated by the electrical layout of the natural frequency of the inductive module 3. _ _ ' is a whole <variable capacitance module> The variable capacitance module 5 has an input terminal that receives a -T electrically connected to the second end of the input capacitor Cln and is connected to the CB terminal of the surface capacitance And the first output terminal of the variable capacitance module 5 provides a size correlation between the first and second output ends of the variable capacitance module 5 according to the change of the adjustment voltage Vc. The modulation frequency value of the adjustment voltage VC is used to change a center frequency and a frequency response of the band pass filter device, wherein a relationship between the modulation capacitance value and the adjustment voltage Vc is as follows (3) As shown in the figure, the center frequency is the equivalent capacitance value of the variable capacitance module 5, the equivalent inductance value of the two inductive modules 3, and the modulation capacitance value.
Cg =cmin +^Cg(l + tanh—~^Fc)......式(3) 其中Cg為調變電容值,Cmin為佈局結構之最小電容值 ’ Vc為調整電壓、]^為一電壓係數。dCg與,分別為調變 電容值與調整電壓的變化量。 /〇=^fe··_...^ (4) 其中/〇為中心頻率,Lp為電感性模組之等效電感值、 Cp為可變電容模組5之等效電容值。 該可變電容模組5更具有一第一二極體D1、一第二二 極體D2 第二二極體D3 ’及一第四二極體D4。 該第一極體D1具有一電連接於該可變電容模組$之 第一輸出端的陰極和一電連接於該可變電容模組5之輪 端的陽極。 ~八 5亥第二二極體D2具有一接地的陰極和一電連接於哕可 10 201240335 變電容模組5之輸入端的陽極。 6亥第三二極體D3具有一電連接於該可變電容模組5之 第二輪出端的陰極和一電連接於該可變電容模組5之輪入 端的1%極。 該第四一極體D4具有一接地的陰極和一電連接於該可 變電容模組5之輸入端的陽極。 <實驗結果> 如圖5所示,為該抽頭式電感TL的晶片佈局圖,可看 出其第一端P1、中間抽頭端P2、第二端P3都在同一邊, 因此能減少過長的接線與寄生電容。 如圖6所不’為該電感性模組3於不同第二偏壓V2的 品質因子,可看出當該第二偏壓V2分別& 〇v、〇5術、 0.56V、〇.564V時,所對應品質因子最大值分別是 20.1 、 52.3 、 124 。 圖7、8所示,為該帶通據波裝置的操作於不同調整 電壓時,所對應的模擬S"、S21及量測Sll、S21,其中,參 數Sl1與S21刀別疋反射損耗(return bss)與輸入損耗 (inSertl〇n 1〇SS) ’其中,調整電壓VC分別為+ 1V、— lv且 所對應中心頻率分別是2 8GHZ、2 5GHZ。 如圖9所7F ’為該帶通濾波器於中 2.8GHz、2.5GHz,根攄只午刀別疋 。 艮據不冋輸入功率Pin所得到的增益值 如圖10所示,為該帶m士 认士 2 9 、濾波益於中心頻率分別是 •8GHZ、2.5GHZ,所量測到的雜訊減(noise figure,NF) 201240335 ’可看出分別是6.3dB、7.9dB。 值得注意的是’在本實施例中,該帶通濾波裝置可以 是包括N個電感性模組3,該電容模組2可以是包括N+1 個串聯的電容,其中’ N21 ’不限於n=2,且該N+1個串聯 的電容中任兩電容間的一共同接點電連接於該N個電感性 模組3中相對應一者的第一端。 綜上所述’上述實施例具有以下優點: 1_該抽頭式電感TL是用一個電感來實現’而習知的變 壓器是具有二個電感,因此,該抽頭式電感TL相較於習知 的變壓器在晶片面積上只需習知的一半。 2. 由式(2 )的虛部可知該電感性模組3從直流到自振 頻率的低頻段期間’虛部也是正值而呈電感性,因此相較 於習知具有較大的可用頻段範圍。 3. 由式(2)可知該電感性模組3之等效電感是相關於 該抽頭式電感TL之全部電感值Ll+L2,相較於習知具有較 尚的利用率。 4. 由本案的式(2)及習知的式(1)的實部來比較,可 知本案之電感性模組3的負電阻值較大,具有較小的功率 耗損。 5. 本案的帶通濾波裝置相較於習知,不需要額外偏壓電 感來提供直流的偏壓,因此能減少帶通濾波裝置的硬體成 本0 6. 本案的帶通濾波裝置相較於習知,更利用該可變電容 模組5來調整該帶通濾波裝置之頻率響應,因此,用途更Cg =cmin +^Cg(l + tanh_~^Fc)... Equation (3) where Cg is the modulation capacitance value and Cmin is the minimum capacitance value of the layout structure 'Vc is the adjustment voltage, ^^ A voltage coefficient. dCg and , respectively, are the amount of change in the modulation capacitor value and the adjustment voltage. /〇=^fe··_...^ (4) where /〇 is the center frequency, Lp is the equivalent inductance value of the inductive module, and Cp is the equivalent capacitance value of the variable capacitance module 5. The variable capacitance module 5 further has a first diode D1, a second diode D2, a second diode D3' and a fourth diode D4. The first polar body D1 has a cathode electrically connected to the first output end of the variable capacitance module $ and an anode electrically connected to the wheel end of the variable capacitance module 5. ~8 5H The second diode D2 has a grounded cathode and an anode electrically connected to the input end of the capacitor 10 201240335 variable capacitance module 5. The 6th third diode D3 has a cathode electrically connected to the second output end of the variable capacitance module 5 and a 1% pole electrically connected to the wheel end of the variable capacitance module 5. The fourth body D4 has a grounded cathode and an anode electrically connected to the input end of the variable capacitance module 5. <Experimental Results> As shown in Fig. 5, the wafer layout of the tapped inductor TL shows that the first end P1, the intermediate tap end P2, and the second end P3 are all on the same side, so that it can be reduced. Long wiring and parasitic capacitance. As shown in FIG. 6, the quality factor of the inductive module 3 at different second bias voltages V2 can be seen as the second bias voltage V2 respectively & 〇v, 〇5, 0.56V, 〇.564V The corresponding maximum quality factor is 20.1, 52.3, and 124, respectively. 7 and 8, when the band-passing device operates at different adjustment voltages, the corresponding simulations S", S21 and the measurements S11, S21, wherein the parameters S1 and S21 are different from the reflection loss (return) Bss) and input loss (inSertl〇n 1〇SS) 'where the adjustment voltage VC is + 1V, - lv and the corresponding center frequency is 2 8GHZ, 2 5GHZ respectively. As shown in Fig. 9 by 7F', the band-pass filter is in the middle of 2.8 GHz and 2.5 GHz. The gain value obtained by the input power Pin is shown in Fig. 10. For the band, the filter is beneficial to the center frequency, which is • 8GHZ, 2.5GHZ, and the measured noise reduction ( Noise figure, NF) 201240335 'It can be seen that it is 6.3dB and 7.9dB respectively. It should be noted that in the embodiment, the band pass filtering device may include N inductive modules 3, and the capacitor module 2 may include N+1 series capacitors, where 'N21' is not limited to n. =2, and a common contact between any two of the N+1 series capacitors is electrically connected to the first end of the corresponding one of the N inductive modules 3. In summary, the above embodiment has the following advantages: 1_the tapped inductor TL is implemented by one inductor' and the conventional transformer has two inductors. Therefore, the tapped inductor TL is compared with the conventional one. The transformer requires only half of the wafer area. 2. It can be seen from the imaginary part of equation (2) that the imaginary part of the inductive module 3 is also positive and inductive during the low frequency range from direct current to the natural frequency, and thus has a larger available frequency band than conventional ones. range. 3. It can be seen from equation (2) that the equivalent inductance of the inductive module 3 is related to the total inductance value Ll+L2 of the tapped inductor TL, which has a better utilization ratio than the conventional one. 4. Comparing the formula (2) of the present case with the real part of the conventional formula (1), it is understood that the inductive module 3 of the present invention has a large negative resistance value and a small power consumption. 5. The band-pass filter device of the present invention does not require an additional bias inductor to provide a DC bias voltage, so the hardware cost of the band pass filter device can be reduced. In the conventional use, the variable capacitance module 5 is further used to adjust the frequency response of the band pass filter device, so that the use is more
S 12 201240335 廣。 惟以上所述者,僅為本發明之較佳實施例而已,當不 能以此限定本發明實施之範圍,即大凡依本發明申請I利 範圍及發明說明内容所作之簡單的等效變化與修飾:皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一種習知的帶通濾波裝置的電路圖; 圖2是一種習知的電感性模組; 圖3是本發明帶通濾波裝置之較佳實施例的電路圖; 圖4是本發明電感性模組之較佳實施例的電路圖; 圖5是本發明之抽頭式電感的晶片佈局圖; 圖6是該電感性模組模擬於不同第二偏壓所對應的品 質因子之示意圖; 圖7是該帶通濾波裝置於不同調整電壓時,所對應的 模擬S"、Sn及量測Sn、Su之第一種示意圖; 圖8是該帶通濾波裝置於不同調整電壓時,所對應的 模擬S"、s21及量測S丨丨、S2丨之第二種示意圖; 圖9是該帶通濾波器於中心頻率分別是2 8GHz、 2-5GHz時,根據不同輸入功率所得到的增益值之示意圖; 及 圖ίο是該π通濾波器於中心頻率分別是2 8GHz、 2.5GHz時,所量測到雜訊指數之示意圖。 13 201240335 【主要元件符號說明】 2 ........ …電容模組 C2 ···. •…第二電容 Cin … …輸入電容 R....... •…電阻 Cb…… …耦合電容 5 ....... •…可變電容模組 Co ·...· …輸出電容 D1 ···· •…第一二極體 3 ....... …電感性模組 D2 ··· •…第二二極體 TL ····. …抽頭式電感 D3 .... •…第三二極體 L1 ···.. …第一部 D4 .... •…第四二極體 L2 ·...· …第二部 VI ···· •…第一偏壓 P1…… …第一端 V2 ·.·· …·第二偏壓 P2…… …中間抽頭端 Vc .··. •…調整電壓 P3…… …第二端 Vin… •…輸入#號 MOS .· …電晶體 Vo..… …·輸出k號 Cf…… …回授電容 C1 ····. …第一電容S 12 201240335 wide. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the present invention in accordance with the scope of the invention and the description of the invention. : All are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram of a conventional band pass filter device; FIG. 2 is a conventional inductive module; FIG. 3 is a circuit diagram of a preferred embodiment of the band pass filter device of the present invention; 4 is a circuit diagram of a preferred embodiment of the inductive module of the present invention; FIG. 5 is a wafer layout diagram of the tapped inductor of the present invention; FIG. 6 is a quality factor corresponding to the different second bias voltages of the inductive module FIG. 7 is a first schematic diagram of the corresponding analog S", Sn and measurement Sn and Su when the band pass filter device is adjusted with different voltages; FIG. 8 is a schematic diagram of the band pass filter device when different voltages are adjusted. The corresponding schematic diagram of the simulated S", s21 and the measurement S丨丨, S2丨; Figure 9 is the bandpass filter at the center frequency of 2 8 GHz, 2-5 GHz, according to different input power A schematic diagram of the obtained gain value; and a graph ίο is a schematic diagram of the measured noise index when the center frequency is 2 8 GHz and 2.5 GHz, respectively. 13 201240335 [Explanation of main component symbols] 2 ........ Capacitor module C2 ···. •...Second capacitor Cin ... Input capacitor R....... •...Resistance Cb... ...Coupling Capacitor 5 ....... • Variable Capacitor Module Co ·...· Output Capacitor D1 ·····...First Diode 3 ....... Inductive Module D2 ···•...Second diode TL ····....Tap-type inductor D3 .... •...third diode L1 ····....the first part D4 ..... •...fourth diode L2 ·...·...the second part VI····...the first bias voltage P1...the first end V2 ·.....the second bias voltage P2... Intermediate tap end Vc .··. •...Adjust voltage P3.........Second end Vin...•...Input##MOS.·...Optosystem Vo.....·Output k#Cf.........Return capacitor C1 · ···. ...first capacitor
S 14S 14
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