201249102 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種包含電感器構成之濾波器。 【先前技術】 以往，考案有各種包含電感器構成之濾波器。其中， 例如專利文獻1揭示由所謂τ型電路構成之濾波器，該T 型電路，將二個串列電感器串聯於訊號線，在此等串列電 感器之連接點與接地之間連接有分流電感器。 以積層基板實現此種使用串列電感器與分流電感器之 Τ型電路之情形’如專利文獻i所示，有以積層基板之内層 電極圖案心成各電感器之情形。此外，以内層電極圖案形 成各電感器之情形’在以往，如專利文獻1所示，使串列 電感器之形成層與分流電感器之形成層不同，以串列電感 器與刀/爪電感器不會電磁場耦合之方式在此等形成層間形 成接地電極。 專利文獻1 :日本特開2007_ 129565號公報 【發明内容】 '而在上述專利文獻1所示之構成’由於在分流電 感器之形成層與串列電感器之形成層之間必須設置接地電 極層，因此積層體變厚接地電極層之量，且亦必須設計將 串列電感益與分流電感器加以連接之配線圖案或導電性通 孔之位置。是以，不易實現積層體之低高度化或小型化， 201249102 設計之自由度降低。 此外’即使不设置接地電極層，若传电抑# ^ 右便串列電感器之形 成層與分流電感器之形成層分離則亦可抑制電磁場耦入 但為了充分抑制電磁場麵合，益法佶播 w ° 热次使積層體小型化、 化。 / 本發明之目的在於實現即使為具有串列電感器與分流 電感器之構成亦不會使設計自由度降低且能使積層體小型L 化、薄型化之濾波器。 ，具備：第1串列電感器及第2串列 輸出入端子與第2輸出入端子之間； 本發明之濾波器 電感器，係串聯於第 以及分流電感器，將第！串列電感器與第2串列電感器之 連接點連接於接地電位。此濾波器之分流電感器係配置成 與第1串列電感器及第2串列電感器之兩者電磁場耦合。 此構成中，可調整對第i串列電感器與第2串列電感 器之兩者之分流電感器之電磁場耦合量，藉由該耦合量， 可調整對分流電感$之傳送訊號之實質上電感以調整據波 益特性。此時，由於無須介在有接地電位，因此相較於習 知構成能更容易進行與所欲電感及形狀對應之圖案設計。 又’本發明之濾波器中，較佳為，分流電感器，對第1 串列電感器之電磁場耦合量與對第2串列電感器之電磁場 麵合量一致。 藉由上述構成’不使第1串列電感器與第2串列電感 器之電感變化即可僅調整分流電感器之電感。 又’本發明之濾波器中，較佳為下述構成。具備：將 201249102 複數個電介質層積層而成之積層體；以及形成在該積層體 内之第1串列電感器之電極圖案、第2串列電感器之電極 圖案、分流電感器之電極圖案。形成有第1串列電感器之 電極圖案及第2串列電感器之電極圖案之電介質層與形成 有分流電感器之電極圖案之電介質層不同。在積層體之積 層方向觀察，分流電感器之電極圖案係配置成與第1串列 電感器之電極圖案與第2串列電感器之電極圖案之各個局 部重疊。 此構成中’將第1串列電感器及第2串列電感器之各 個與分流電感器之電磁場耦合沿著積層方向實現。 又，本發明之濾波器中，較佳為下述構成。將複數個 電介質層積層而成之積層體、形成有形成在積層體内之第i 串列電感器之電極圖案之電介質層、形成有分流電感器之 電極圖案之電介質層至少局部一致。再者，形成有第2串 列電感器之電極圖案之電介質層、形成有分流電感器之電 極圖案之電介質層至少局部―致。分流電感器係藉由層内 之電磁㈣合與第丨串列電感器及第2 _列電感器電磁場 麵合。 此構成中，將第i串列電感器及第2串列電 個與分流電感^電磁場耗合在電介質層…内實現。 又’本發明之遽波器中，在積層體之積層方向觀察， f 1串列電感器與第2串列電感器之電流方向與分流電感 器之電流方向相同亦可。 此構成中，分流電感器之電感變小。亦即，不使分流 201249102 電感器之形狀變化即可使電感較與各串列電感器不電磁場 耗合之構成變小。 又’本發明之濾波器中’在積層體之積層方向觀察， 第1串列電感器與帛2串列電感器之電流方向與分流電感 益之電流方向相反亦可。 此構成中，分流電感器之電感變大。亦即，不使分流 電感器之形狀變化即可使電感較與各串列電感器不電磁場 耦合之構成變大。亦即，能使用以獲得和與各串列電感器 不電磁場搞合之構成相同之電感之形狀變小。又，作為用 以獲得和與各串列電感器不電磁場耦合之構成相同之電感 之形狀’能使電極寬度變宽。 又，本發明之濾波器中，較佳為，具備第丨串列電感 器第2串列電感器及分流電感器、及電容器，且具有帶 通特性。此構成中，使用上述電感器之連接構成，可實現 帶通濾波器。 又’本發明之濾波器中，較佳為下述構成。具有帶通 特性，該帶通特性，具備：帛1串列電感器、帛2串列電 感器、及分流電感器；帛i電容器，係串聯於第【輸出入 端子與第1串列電感器之間；第2電容器，係串聯於第2 輸出入端子與第2串列電感器之間；帛3電容器，係連接 於分流電感器與接地電位之間；帛4電容器，將第丄串列 電感器與帛i電容器之連接點和分流電感器與第3電容器 之連接點加以連接；第5電容器，將第2串列電感器與第] 電容器之連接點和分流電感器與帛3電容器之連接點加以 (§) 6 201249102 連接；以及第6電容器，係串聯於第1輸出入端子與第2 輸出入端子之間。接著’在積層體之積層方向觀察，配置 成第丨串列電感器、第！電容器、第4電容器之形成區域 與第2串列電感器、第2電容器'第5電容器之形成區域 不重疊。 此構成中，顯示使用上述電感器之連接構成之帶通濾 波器之更具體構成。此外，II由構成為上述積層構造，可 抑制不需要耦合，實現特性優異之帶通濾波器。 又，本發明之濾波器中，具備第〖串列電感器、第2 串列電感器及分流電感器、及電容器’且具有高頻通過特 性亦可。此構成中，使用上述電感器之連接構成，可實現 帶通濾波器。 貫現即使為具有串列電感器與分流電感器之構成亦不 會使設計自由度降低且能使積層體小型化、薄型化之渡波 器。 【實施方式】 參照圖式說明本發明實施形態之濾波器電路。圖丨（A) 係本實施形態之濾波器電路所使用之T型電感器電路之等 效電路圖，圖係易於理解地顯示該T型電感器電路之 電磁場搞合關係之電路圖。 如圖1所示，在本實施形態之τ型電感器電路，對將 第1輸出入端子port 1與第2輸出入端子P〇rt2加以連接之 訊號線串聯有第1串列電感器L1A與第2串列電感器L1B。 201249102 更具體而言’從第1輸出 子Port2側依序串聯有第 器 L1B » 入端子Portl側朝向第2輪出入端 1串列電感器L1A、第2串列電咸 第1串列電感器L1A與第2串列電感器L1B之連接點 係藉由分流電感器L2連接至接地電位。 ” 在上述T型電感器電路，如圖i⑻所示，以部分電感 器L2A’，部分電感器L2,，，部分電感器L2b，之串列電路構 成分流電感器L2。 部分電感器L2A’與第1串列電感器L1A電磁場耦合。 部分電感器L2’’與第i串列電感器L1A及第2串列電感器 lib不電磁場耦合。部分電感器L2B，與第2串列電感器 電磁場耦合。 部分電感器L2A’與第1串列電感器L1A之電磁場耦合 量與部分電感器L2B’與第2串列電感器L1B之電磁場耦合 量相同® 藉由構成此種τ型電感器電路，以第i串列電感器L1A 及第2串列電感器LIB與分流電感器電磁場耦合’分別產 生交互電感Μ。 然而’在串聯於訊號線之第1串列電感器L1Α產生之 交互電感Μ與在第2串列電感器LIB產生之交互電感Μ抵 銷。是以’即使第1串列電感器L1A及第2串列電感器L1B 對分流電感器L2產生交互電感Μ，串聯於訊號線之合成電 感器之實質電感值亦不變化。 另一方面’分流電感器L2’若設為在不產生交互電感 8 201249102 M之狀態下之元件之電感L(L2)，則因交互電感μ，實質電 感成為L(L2)-2M。 此處’若以交互電感Μ成為正值之方式使分流電感器 L2與第1、第2串列電感器L1A，L1B電磁場耦合，則不使 形狀變化即可降低分流電感器L2之實質電感。 又’若以交互電感Μ成為負值之方式使分流電感器與 第1、第2串列電感器L1A，L1B電磁場耦合，則不使形狀 隻化即可增加分流電感器L2之實質電感。 如上述，本案發明之發明人，發現藉由使用本實施形 態之電路構成之Τ型電感器電路，不改變各電感器之形狀， 即可達成在習知Τ型電感器電路無法實現之不使孝聯於訊 號線之串列電感器之電感變化而僅使分流電感器之電感變 化藉此，不使各電感器之形狀變化即可調整具備該τ型 電感器電路之滤波器之遽波器特性。又，即使為相同特性 之濾波益亦可使形狀變化。例如’能將相同特性之濾波器 形成為更小型。 ° 、匕種構成之Τ型電感器電路，能使用積層體藉由下述 構&實現。圖2係實現本實施形態之τ型電感器電路之 層體之分解立體圖。圖3係實現本實施形態之T 感'電路之積層體101之各層圖。圖3係在積層體101< ㈣方向觀察各電介質層之圖，亦即從與積㈣ι〇ι之： 面或底面正交方向德鼓国 貝 τ,… 匕外’圖2、圖3中，僅記動 T型電感器電路之部分己栽 層、其他電極圖案、構裝用電極則省略圖示。 質 201249102 積層體100係將五層電介質層pL1, PL2, pL3, pL4, pL5 積層而成。在第1層即電介質層PL1沿著第1方向（圖2中 從左後向右前之方向，圖3中橫方向）形成有直線狀之線狀 電極1 0 1。線狀電極1 〇 1係由線狀電極1 〇〗A，1 〇丨b連續形 成之構造構成。 線狀電極101 A之與和線狀電極ι〇1Β連接側相反側之 端部，係連接於貫通電介質層PL1，PL2之導電性通孔 VH1 3 A。線狀電極1 〇 1 b之與和線狀電極1 〇丨a連接側相反 側之端部，係連接於貫通電介質層PL1，pL2之導電性通孔 VH13B。 線狀電極101 A，101B之連接點，係透過往此等之正交 第2方向（圖2中從左前向右後之方向，圖3中縱方向）延伸 之短距離之配線電極連接於貫通電介質層pu之導電性通 孔 VH12。 在第1層PL1之下層側之第2層pL2形成有構成上述 分流電感H L2之捲繞形之、線狀電極1〇2。線狀電極1〇2具 備與第2方向平行之線狀電極121，122、與第丨方向平行之 線狀電極123。此等線狀電極121，122，123,與分流電感器 L2之各部分如下對應。線狀電⑮121與上述分流電感器L2 之部分電感器L2A，對應’線狀電極122與上述分流電感器 ^之部分電感器L2B’對應，線狀電極123與上述分流電感 器L2之部分電感器L2’’對應。 線狀電極121之一端係連接於導電性通孔VHi2。線狀 電極m之另—端係連接於線狀電極123之—端。線狀電 10 201249102 極122之一端係連接於線狀電極123之另—端，線狀電極 122之另一端係透過未圖示之導電性通孔連接至作為接地 電位之電極。 在第2層PL2之下層側之第3層PL3形成有構成上述 第1串列電感器L1A之一部分之捲繞形之線狀電極ι〇3Α、 構成第2串列電感器L1B之一部分之捲繞形之線狀電極 103B。線狀電極103A，103B係沿著第i方向相隔既定間隔 形成。 線狀電極1 03 A係由與第2方向平行之二條線狀部1 3丨A， 13 3A與將此等線狀部131A，133A加以連接且與第i方向平 行之中間線狀部132A構成。線狀部13 1A之和與中間線狀 部13 2 A連接側相反側之端部係連接於貫通電介質層pL丄 PL2之導電性通孔VH13A。線狀部133A之和與中間線狀部 1 32A連接側相反側之端部係連接於貫通電介質層pL3之導 電性通孔VH34A。 此處’線狀部133A係以從積層體100之頂面側觀察（俯 視各電介質層）、與形成在電介質層PL2之線狀電極1 〇2之 線狀電極121重疊之方式形成。藉由此構成，構成第i串 列電感器L 1A之線狀部1 3 3 A與構成分流電感器L2之部分 電感器L2A’之線狀電極121沿著積層方向電磁場耦合。藉 此，可在第1串列電感器L1A，與分流電感器L2A，之間產生 交互電感Μ。 線狀電極103Β係由與第2方向平行之二條線狀部13 1Β， 133Β與將此等線狀部131β，133Β加以連接且與第i方向平 201249102 行之中間線狀部132B構成。線狀部mB之和與中間線狀 部132B連接側相反側之端部係連接於貫通電介質層⑴ PL2之導電性通孔VH13B。線妝卹Λ丄曰 ’ 深狀。Ρ 133Β之和與中間線狀部 ⑽連接側相反側之端料連接於貫通電介質層pL3之導 電性通孔VH34B。 此處，線狀M33B係以從積層體1〇〇之頂面側觀察（俯 視各電介質層）、與形成在電介質層pL2之線狀電極1〇2之 線狀電極122重疊之方式形成。#由此構成，構成第2串 列電感器UB之線狀部133B與構成分流電感器L2之部分 電感器L2B，之線狀電㈣2沿著積層方向電磁場耦合。藉 此’可在第2串列電感器L1B’與分流電感器L2B，之間產生 交互電感Μ » 在第3層PL3之下層側之第4層？"形成有構成上述 第1串列電感器L1A之-部分之捲繞形之線狀電極1〇4八、 構成第2串列電感器LIB 部分之捲繞形之線狀電極 觸。線狀電極104A，職係沿著第1方向相隔既定間隔 形成。 線狀電極104A之一端係連接於導電性通孔VH34A。線 狀電極104A之另一端係連接於貫通電介質層之導電性 通孔VH45A。線狀電極104A係以從積層冑1〇〇之頂面側觀 察形成在與線狀電極1〇3Α大致相同區域且局部重疊之方式 形成。 線狀電極104B之一端係連接於導電性通孔VH34B。線 狀電極104B之另一端係連接於貫通電介質層pL4之導電性 12 201249102 通孔VH45B。 在第4層PL4之下層側之第5層PL5形成有構成上述 第1串列電感器L1A之一部分之線狀電極ι〇5Α、構成第2 串列電感器L1B之一部分之線狀電極105Ββ線狀電極1〇5八， 1 05B係沿著第！方向相隔既定間隔形成。 線狀電極1 05A之一端係連接於導電性通孔VH45A。線 狀電極105A之另一端係透過未圖示之導電性通孔連接於構 成上述第1輸出入端子portl之電極。 線狀電極105B之一端係連接於導電性通孔VH45B。線 狀電極105®之另一端係透過未圖示之導電性通孔連接於構 成上述第2輸出入端子port2之電極。 在上述構成，從積層體之頂面側觀察，若藉由第1串 列電感器L1A及第2串列電感器⑽與分流電感器L2以 電流流動方向成為相同之方式進行電磁場耦合，則交互電 感Μ成為正值。從積層體之頂面側觀察，若藉由第丨串列 電感器L1A及第2串列電感器L1B與分流電感器L2以電 流流動方向成為相反之方式進行電磁場耦合，則交互電感Μ 成為負值。是以，若以規定此等之電流方向之關係之方式 配置各電感器，則可獲得與分別之形狀對應之特性。 藉由使用上述構成，可刻意使上述交互電感Μ產生， 實現可調整特性之Τ型電感器電路。 此外，藉由使用此構造，不設置防止第i、帛2串列電 感器L1A’ L1B與分流電感器L2之電磁場耦合之接地電極 層亦可，因此能使積層體低高度化。又，由於不須使第卜 13 201249102 第2串列電感器L1A，LIB與分流電感器L2在接地電極層 之上下分離，因此能使用以將此等等效電路地T型連接之 迴繞電極之配線圖案為簡易之圖案。 由上述電路構成及構造構成之T型電感器電路可利用 於下述帶通濾波器。圖4係本實施形態之帶通滤波器之等 效電路圖。圖5係本實施形態之帶通濾波器之各層圖。此 外，圖5中’亦記載構成與本實施形態之帶通濾波器不同 之電路之電極圖案’以下僅說明與帶通濾波器相關之部 分。又’圖5中’記載在各電介質層pLl〇i〜pli 12之圓形 標記表示導電性通孔。又，圖5中，僅記載與帶通濾波器 相關之電介質層，關於實現帶通濾波器之電介質層以外之 構成則省略圖示，以省略說明。 首先，參照圖4說明電路構成。 本實施形態之帶通濾波器，如上述具備第1串列電感 器L1A與第2串列電感器L1B之串聯電路，第1串列電感 器L1A與第2串列電感器L1B之連接點係藉由分流電感器 L2連接於接地電位。 在第ί串列電感器L1A與第1輸出入端子p〇rt丨之間 連接有第1串列電容器C1A。在第2串列電感器LIB與第 2輸出入端子Port2之間連接有第2串列電容器C1B。 在分流電感器L2與接地電位之間連接有第1分流電容 器C3。 第1串列電感器L1A與第1串列電容器c丨A之連接點 係透過第2分流電容器C2A連接至分流電感器L2與第1 ⑧ 14 201249102 分流電容器C3之連接點。 第2串列電感器l 1B與第2串列電容器匸1 b之連接點 係透過第3分流電容器C2B連接至分流電感器L2與第 流電容器C3之連接點。 在第1輸出入端子Pom與第2輸出入端子p〇rt2之間 連接有第3串列電容器C0。 接著’參照圖5說明積層構造。 在作為帶通濾波器之第1層即電介質層1 〇 1形成有 第3串列電容器c〇用之平板電極。 在電介質層102形成有第3串列電容器c〇與第i串列 電容器C1A與第2串列電容器（：1Β用之平板電極。 電介質層PL1〇3,與上述電介質層pu對應，形成有τ 型電感器電路之迴繞用之線狀電極。 電介質層PL104，與上述雷介暂通 丹工4电；丨負層PL2對應，形成有 分流電感器L2用之線狀電極。 在電介質層PL105形成有用以將八、 令用乂將分流電感器L2連接於 接地電位之迴繞電極。 二介質層_’PLl07，PL1〇8,分別與上述電介質層 -MB 4,PL5對應’第1串列電感器UA與第2串列電感 ㈣用之線狀電極係、形成為以積層方向作為螺㈣。 在電介質層PL1〇9形成有對第丨串列電容器⑽與第 容器以共用之平板電極。又，在電介質層請 $成有對第2串列電容器C1B盥第 士 之平板f極。 /、第3刀流電容器C2B共用 15 201249102 在電介質層PL 110形成有第2分流電容器C2A用之平 板電極、第3分流電容器C2B用之平板電極。 在電介質層PL111形成有第！串列電容器C1A用之平 板電極、第2串列電容器C1B用之平板電極^ 在電介質層PL112形成有第}分流電容器C3用之平板 電極。此外，第1分流電容器C3用之另一平板電極為形成 在未圖示之電介質層之接地電極。 藉由上述構成之帶通濾波器，可調整串列電感器Ua， L1B與分流電感器L2間之電磁場耦合，調整濾波器特性。 圖6係本實施形態之帶通濾波器及習知構成之帶通濾波器 之通過特性圖。圖6(A)、（D)係習知構成之帶通濾波器之通 過特性圖。圖6(B)係與圖6(A)相同電路構成且以交互電感 Μ成為正值之方式使串列電感器與分流電感器電磁場耦合 之情形之通過特性圖。圖6(C)係與圖6(Α)相同電路構成且 以交互電感Μ成為負值之方式使串列電感器與分流電感器 電磁場耦合之情形之通過特性圖。圖6(D)係對圖6(Α)使分 流電感器之電感值變化之情形之通過特性圖。此外，圖6 所不之帶通濾波器係由圖4所示之等效電路構成之帶通濾 波器。又，圖6所示之濾波器特性係藉由模擬所得。具體 之各電路元件之元件值係設定成如下所示。圖6(Α)、（Β)、 (C)、（D)中，第1串列電感器L1Α與第2串列電感器[1Β 之電感為2.0nH。第1串列電容器cia、第2串列電容器 C1B、第2分流電容器C2A、及第3分流電容器C2B之電 容為0.75pF ’第3串列電容器c〇之電容為〇 24pF。此外， 16 ⑧ 201249102 第1分流電容器C3設為導通狀態（電容為〇F)e 另一方面’圖6(A)、（B)、（c)中，分流電感器L2之電 感為l.lnH。圖6(B)、(C)中，分流電感器L2之部分電感器 L2A，L2B之各電感為〇 5nH，部分電感器L2’，之電感為 〇·1ηΗ。圖6(D)中，分流電感器L2之電感力HH。 又’圖6(B)、（C)中’設第i串列電感器L1A及第2串 列電感器L1B與分流電感器L2之耦合係數〖為〇1。此情 形，交互電感Μ之絕對值為〇 UH。 進行此種模擬之結果，如圖6(A)、（B)、（c)所示，即使 相同電路構成’藉由調整串列電感器與分流電感器之電磁 场耦合，亦可構成不同通過特性之帶通濾波器。 具體而言’決定二個串列電感器與分流電感器之電 感’如圖6(A)所示’相對於不產生串列電感器與分流電感 裔之電磁場耦合之通過特性，如圖6(B)所示，交互電感M 成為正值之情形，對分流電感器之訊號之電感降低交互電 感Μ之2倍量，能成為更狹帶域特性，且較大地取得低頻 側之衰減極之衰減量。又，如圖6(c)所示，交互電感Μ成 為正值之情形，對分流電感器之訊號之電感增加交互電感Μ 之2倍量，能成為更廣帶域特性。 又’如圖6(C)、圖6(D)所示，藉由調整串列電感器與 分流電感器之電磁場耦合，即使分流電感器之電感不同， 亦可構成相同通過特性之帶通濾波器。具體而言，圖6(c) 中’儘管分流電感器L2之無訊號時之電感為1 · 1 nH，亦可 獲得與圖6(D)所示之分流電感器L2之電感為1.3nH之情形 17 201249102 相同之通過特性。此輿相 兴相對交互電感]VI為0_ 1 nH增加了其 二倍之 0.2nH 相等。如 f·、+· , '201249102 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a filter including an inductor. [Prior Art] In the past, there were various filters including inductors. For example, Patent Document 1 discloses a filter composed of a so-called τ-type circuit in which two series inductors are connected in series to a signal line, and a connection point between the series inductors and the ground is connected thereto. Shunt inductor. In the case where the tantalum-type circuit using the tandem inductor and the shunt inductor is realized by the laminated substrate, as shown in Patent Document i, there is a case where the inner-layer electrode pattern of the laminated substrate is formed into the respective inductors. Further, in the case where the inductors are formed by the inner layer electrode pattern, in the related art, as shown in Patent Document 1, the formation layer of the tandem inductor is different from the formation layer of the shunt inductor, and the inductor and the blade/claw inductance are arranged in series. The ground electrode is formed between the layers formed without electromagnetic field coupling. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2007-129565 [Draft of the Invention] The configuration shown in the above Patent Document 1 is that a ground electrode layer must be provided between the formation layer of the shunt inductor and the formation layer of the tandem inductor. Therefore, the laminated body is thickened by the amount of the ground electrode layer, and it is also necessary to design a wiring pattern or a conductive via hole to which the series inductance is connected to the shunt inductor. Therefore, it is difficult to achieve a low height or miniaturization of the laminated body, and the degree of freedom of the design of 201249102 is lowered. In addition, even if the grounding electrode layer is not provided, if the formation of the inductor is separated from the forming layer of the shunt inductor, the electromagnetic field coupling can be suppressed, but in order to fully suppress the electromagnetic field, The w ° heat is used to make the laminate smaller and smaller. An object of the present invention is to realize a filter which has a configuration in which a series inductor and a shunt inductor are not reduced in design, and which can reduce the thickness and thickness of the laminate. The first series inductor and the second series input/output terminal and the second input/output terminal are provided. The filter inductor of the present invention is connected in series with the shunt inductor, and will be the first! The connection point between the serial inductor and the second series inductor is connected to the ground potential. The shunt inductor of the filter is configured to be electromagnetically coupled to both the first tandem inductor and the second tandem inductor. In this configuration, the electromagnetic field coupling amount of the shunt inductor for both the i-th series inductor and the second series inductor can be adjusted, and the coupling amount can be adjusted to substantially reduce the transmission signal of the shunt inductor $ Inductance to adjust the characteristics of the wave. At this time, since it is not necessary to have a ground potential, the pattern design corresponding to the desired inductance and shape can be more easily performed than the conventional configuration. Further, in the filter of the present invention, it is preferable that the shunt inductor has the electromagnetic field coupling amount to the first tandem inductor and the electromagnetic field surface amount of the second tandem inductor. According to the above configuration, only the inductance of the shunt inductor can be adjusted without changing the inductance of the first tandem inductor and the second tandem inductor. Further, in the filter of the present invention, the following configuration is preferred. A laminated body in which a plurality of dielectric layers are laminated in 201249102, an electrode pattern of the first series inductor formed in the laminated body, an electrode pattern of the second tandem inductor, and an electrode pattern of the shunt inductor. The dielectric layer in which the electrode pattern of the first tandem inductor and the electrode pattern of the second tandem inductor are formed is different from the dielectric layer in which the electrode pattern of the shunt inductor is formed. The electrode pattern of the shunt inductor is arranged to overlap the respective portions of the electrode pattern of the first tandem inductor and the electrode pattern of the second tandem inductor as viewed in the lamination direction of the laminated body. In this configuration, the electromagnetic field coupling of each of the first tandem inductor and the second tandem inductor to the shunt inductor is realized in the lamination direction. Further, in the filter of the present invention, the following configuration is preferred. The laminated body in which a plurality of dielectric layers are laminated, the dielectric layer in which the electrode pattern of the i-th series inductor formed in the laminated body is formed, and the dielectric layer in which the electrode pattern of the shunt inductor is formed are at least partially identical. Further, the dielectric layer in which the electrode pattern of the second series inductor is formed and the dielectric layer in which the electrode pattern of the shunt inductor is formed are at least partially localized. The shunt inductor is combined with the second-row inductor and the second-row inductor electromagnetic field by electromagnetic (4) bonding in the layer. In this configuration, the i-th serial inductor and the second serial power are combined with the shunt inductor electromagnetic field in the dielectric layer. Further, in the chopper of the present invention, the current direction of the f 1 series inductor and the second series inductor may be the same as the current direction of the shunt inductor when viewed in the stacking direction of the laminated body. In this configuration, the inductance of the shunt inductor becomes small. That is, the shape of the inductor of the 201249102 is not changed, so that the inductance is smaller than that of the series inductors. Further, in the filter of the present invention, the current direction of the first series inductor and the 帛2 series inductor may be opposite to the current direction of the shunt inductor, as viewed in the lamination direction of the laminated body. In this configuration, the inductance of the shunt inductor becomes large. That is, the configuration in which the inductance is not electromagnetically coupled to each of the series inductors can be made larger without changing the shape of the shunt inductor. That is, the shape of the inductor which can be used to obtain the same structure as that of the series inductors without the electromagnetic field becomes small. Further, the electrode width can be widened as the shape of the inductor which is obtained by the same inductance as that of the series inductors. Further, in the filter of the present invention, it is preferable that the second series inductor, the shunt inductor, and the capacitor of the second series inductor are provided, and the band pass characteristic is provided. In this configuration, a band pass filter can be realized by using the above-described connection configuration of the inductor. Further, in the filter of the present invention, the following configuration is preferred. Band pass characteristic, the band pass characteristic includes: 帛1 series inductor, 帛2 series inductor, and shunt inductor; 帛i capacitor is connected in series [input and output terminal and first series inductor The second capacitor is connected in series between the second output terminal and the second series inductor; the 帛3 capacitor is connected between the shunt inductor and the ground potential; the 帛4 capacitor is connected in series The connection point between the inductor and the 帛i capacitor and the connection point of the shunt inductor and the third capacitor are connected; the fifth capacitor connects the connection point of the second series inductor and the cascode capacitor and the shunt inductor and the 帛3 capacitor The connection point is connected by (§) 6 201249102; and the sixth capacitor is connected in series between the first input/output terminal and the second input/output terminal. Then, when viewed in the stacking direction of the laminated body, it is arranged as a tantalum series inductor, the first! The formation region of the capacitor and the fourth capacitor does not overlap with the formation region of the second series inductor and the second capacitor '5th capacitor. In this configuration, a more specific configuration of a band pass filter constructed by using the above-described inductor connection is shown. Further, II is constituted by the above-described laminated structure, and it is possible to suppress a band pass filter having excellent characteristics without requiring coupling. Further, the filter of the present invention may have a high-frequency pass characteristic, such as a tandem inductor, a second tandem inductor, a shunt inductor, and a capacitor. In this configuration, a band pass filter can be realized by using the above-described connection configuration of the inductor. In the case of a configuration having a series inductor and a shunt inductor, it is possible to reduce the degree of freedom in design and to reduce the thickness and thickness of the laminated body. [Embodiment] A filter circuit according to an embodiment of the present invention will be described with reference to the drawings. Fig. A(A) is an equivalent circuit diagram of a T-type inductor circuit used in the filter circuit of the present embodiment, and the circuit diagram showing the electromagnetic field engagement relationship of the T-type inductor circuit is easily understood. As shown in FIG. 1, in the τ-type inductor circuit of the present embodiment, the first series inductor L1A and the signal line connecting the first input/output terminal port 1 and the second input/output terminal P〇rt2 are connected in series. The second series inductor L1B. 201249102 More specifically, 'the first L1B is connected in series from the first output sub-port 2 side» The input port Port1 side faces the second round input/output terminal 1 serial inductor L1A, and the second serial electric salt first inverter inductor The connection point between L1A and the second series inductor L1B is connected to the ground potential by the shunt inductor L2. In the above T-type inductor circuit, as shown in Figure i(8), the partial inductor L2A', the partial inductor L2, and the partial inductor L2b, the serial circuit constitutes the shunt inductor L2. The partial inductor L2A' and The first series inductor L1A is electromagnetically coupled. The partial inductor L2'' is coupled to the ith serial inductor L1A and the second serial inductor lib without electromagnetic fields. Part of the inductor L2B is coupled to the second series inductor electromagnetic field. The electromagnetic field coupling amount of the partial inductor L2A' and the first serial inductor L1A is the same as the electromagnetic field coupling amount of the partial inductor L2B' and the second serial inductor L1B. By constituting such a τ-type inductor circuit, The i-th series inductor L1A and the second series inductor LIB are coupled to the shunt inductor electromagnetic field respectively to generate an alternating inductance Μ. However, the interaction inductance generated by the first series inductor L1 串联 connected in series to the signal line The cross-inductance generated by the second series inductor LIB is offset by the fact that even if the first series inductor L1A and the second series inductor L1B generate an alternating inductance to the shunt inductor L2, the combination of the signal lines is connected. Inductance of the inductor On the other hand, if the shunt inductor L2' is set to the inductance L(L2) of the component in the state where the cross-inductance 8 201249102 M is not generated, the substantial inductance becomes L(L2) due to the mutual inductance μ. 2M. Here, if the shunt inductor L2 is coupled to the electromagnetic field of the first and second series inductors L1A, L1B in such a way that the mutual inductance Μ becomes positive, the essence of the shunt inductor L2 can be reduced without changing the shape. Inductance. If the shunt inductor is coupled to the first and second series inductors L1A, L1B in an electromagnetic field with a negative inductance, the actual inductance of the shunt inductor L2 can be increased without changing the shape. As described above, the inventors of the present invention have found that by using the 电感-type inductor circuit constructed by the circuit of the present embodiment, the shape of each inductor can be changed without achieving the conventional Τ-type inductor circuit. By changing the inductance of the tandem inductor in the signal line and changing only the inductance of the shunt inductor, the chopping of the filter having the τ-type inductor circuit can be adjusted without changing the shape of each inductor. Features. Further, even if the filter is the same characteristic, the shape can be changed. For example, the filter of the same characteristic can be formed to be smaller. The Τ-type inductor circuit of the ° type can be used, and the laminated body can be used by the following structure. Fig. 2 is an exploded perspective view showing a layer body of the τ-type inductor circuit of the present embodiment. Fig. 3 is a view showing layers of the layered body 101 of the T-Sense circuit of the present embodiment. Fig. 3 is a layered body. 101<(4) Observing the diagram of each dielectric layer, that is, from the product (4) ι〇ι: orthogonal to the surface or the bottom surface, Degu Guobei τ,... 匕外' Figure 2, Figure 3, only the T-type inductor Some of the layers of the circuit, the other electrode patterns, and the electrodes for mounting are omitted. Quality 201249102 The laminated body 100 is formed by laminating five dielectric layers pL1, PL2, pL3, pL4, and pL5. In the first layer, that is, the dielectric layer PL1, a linear linear electrode 1 0 1 is formed along the first direction (the direction from the left rear to the right in Fig. 2, and the horizontal direction in Fig. 3). The linear electrode 1 〇 1 is composed of a structure in which the linear electrodes 1 〇 A, 1 〇丨 b are continuously formed. The end portion of the linear electrode 101A opposite to the side on which the linear electrode ι〇1 is connected is connected to the conductive via hole VH1 3A penetrating through the dielectric layers PL1 and PL2. The end portion of the linear electrode 1 〇 1 b opposite to the side on which the linear electrode 1 〇丨 a is connected is connected to the conductive via hole VH13B penetrating through the dielectric layers PL1 and pL2. The connection points of the linear electrodes 101 A and 101B are connected to the wiring electrodes of a short distance extending in the second orthogonal direction (the direction from the left front to the right rear in FIG. 2 and the vertical direction in FIG. 3). Conductive via hole VH12 of dielectric layer pu. The second electrode pL2 on the lower layer side of the first layer PL1 is formed with a linear electrode 1〇2 which forms a winding shape of the above-described shunt inductor H L2 . The linear electrode 1〇2 has linear electrodes 121 and 122 parallel to the second direction, and a linear electrode 123 parallel to the second direction. These linear electrodes 121, 122, 123 correspond to the respective portions of the shunt inductor L2 as follows. The linear electric 15121 and a part of the inductor L2A of the shunt inductor L2 correspond to the 'linear electrode 122 and the partial inductor L2B' of the shunt inductor ^, and the linear electrode 123 and a part of the inductor of the shunt inductor L2 L2'' corresponds. One end of the linear electrode 121 is connected to the conductive via VHi2. The other end of the linear electrode m is connected to the end of the linear electrode 123. Linear Electric 10 201249102 One end of the pole 122 is connected to the other end of the linear electrode 123, and the other end of the linear electrode 122 is connected to an electrode serving as a ground potential through a conductive via (not shown). The third layer PL3 on the lower layer side of the second layer PL2 is formed with a wound electrode line electrode ι3 构成 constituting one of the first series inductors L1A and a portion constituting a part of the second series inductor L1B. The linear electrode 103B is wound. The linear electrodes 103A, 103B are formed at predetermined intervals along the i-th direction. The linear electrode 1300 A is composed of two linear portions 1 3A, 13 3A parallel to the second direction, and the intermediate linear portions 132A connected to the linear portions 131A, 133A and parallel to the ith direction. . The end of the line portion 13 1A opposite to the side on which the intermediate linear portion 13 2 A is connected is connected to the conductive via hole VH13A penetrating through the dielectric layer pL 丄 PL2. The end of the line portion 133A opposite to the side on which the intermediate linear portion 1 32A is connected is connected to the conductive via hole VH34A penetrating the dielectric layer pL3. Here, the linear portion 133A is formed so as to overlap the linear electrode 121 formed on the linear electrode 1 〇 2 of the dielectric layer PL2 as viewed from the top surface side of the laminated body 100 (viewing each dielectric layer). With this configuration, the linear portion 1 3 3 A constituting the i-th series inductor L 1A and the linear electrode 121 constituting the partial inductor L2A' of the shunt inductor L2 are electromagnetically coupled along the lamination direction. Thereby, an interaction inductance 产生 can be generated between the first series inductor L1A and the shunt inductor L2A. The linear electrode 103 is composed of two linear portions 13 1 Β 133 平行 parallel to the second direction, and 133 Β connected to the linear portions 131 β and 133 且 and intersecting with the intermediate linear portion 132B in the i-th direction of 201249102. The end of the line portion mB opposite to the side on which the intermediate linear portion 132B is connected is connected to the conductive via hole VH13B penetrating through the dielectric layer (1) PL2. Line makeup Λ丄曰 ‘ deep. The end of the side opposite to the side on which the intermediate linear portion (10) is connected is connected to the conductive via hole VH34B penetrating through the dielectric layer pL3. Here, the linear M33B is formed so as to overlap the linear electrode 122 formed on the linear electrode 1〇2 of the dielectric layer pL2 as viewed from the top surface side of the laminated body 1 (the dielectric layers are viewed from above). With this configuration, the linear portion 133B constituting the second series inductor UB and the partial inductor L2B constituting the shunt inductor L2 are electrically coupled to each other along the laminated direction electromagnetic field. By this, an alternating inductance Μ can be generated between the second series inductor L1B' and the shunt inductor L2B. » The fourth layer on the layer side below the third layer PL3? " A linear electrode 1?8 having a winding shape constituting a portion of the first series inductor L1A, and a linear electrode contact forming a winding shape of the second series inductor LIB portion. The linear electrodes 104A are formed at predetermined intervals along the first direction. One end of the linear electrode 104A is connected to the conductive via VH34A. The other end of the linear electrode 104A is connected to the conductive via hole VH45A penetrating through the dielectric layer. The linear electrode 104A is formed so as to be formed in substantially the same region as the linear electrode 1〇3Α and partially overlapped from the top surface side of the laminated layer 1〇〇. One end of the linear electrode 104B is connected to the conductive via hole VH34B. The other end of the linear electrode 104B is connected to the conductive 12 201249102 through hole VH45B penetrating through the dielectric layer pL4. The fifth electrode PL5 on the lower layer side of the fourth layer PL4 is formed with a linear electrode ι 5 Α constituting a part of the first series inductor L1A and a linear electrode 105 Β β line constituting a part of the second series inductor L1B. The electrode 1〇5,8 05B is along the first! The directions are formed at regular intervals. One end of the linear electrode 105A is connected to the conductive via VH45A. The other end of the linear electrode 105A is connected to an electrode constituting the first input/output terminal port1 through a conductive via (not shown). One end of the linear electrode 105B is connected to the conductive via hole VH45B. The other end of the linear electrode 105® is connected to an electrode constituting the second input/output terminal port 2 through a conductive via (not shown). In the above-described configuration, when the first series inductor L1A and the second series inductor (10) and the shunt inductor L2 are electromagnetic field coupled so that the current flow directions are the same, the interaction is performed from the top surface side of the laminated body. The inductance Μ becomes a positive value. When the electromagnetic field coupling is performed so that the current flow direction is reversed by the second series inductor L1A and the second series inductor L1B and the shunt inductor L2 as viewed from the top surface side of the laminated body, the mutual inductance Μ becomes negative. value. Therefore, if the inductors are arranged such that the relationship of the current directions is specified, characteristics corresponding to the respective shapes can be obtained. By using the above configuration, the above-described mutual inductance Μ can be intentionally generated, and a Τ-type inductor circuit with adjustable characteristics can be realized. Further, by using this configuration, the ground electrode layer which prevents the electromagnetic field coupling of the i-th and 帛2 series-connected inductors L1A' L1B and the shunt inductor L2 is not provided, so that the laminated body can be made lower in height. Further, since it is not necessary to separate the second series inductor L1A, LIB and the shunt inductor L2 from above and below the ground electrode layer, it is possible to use a rewinding electrode in which the T-type connection of these equivalent circuits is connected. The wiring pattern is a simple pattern. The T-type inductor circuit constructed and constructed as described above can be utilized in the band pass filter described below. Fig. 4 is an equivalent circuit diagram of the band pass filter of the embodiment. Fig. 5 is a view showing each layer of the band pass filter of the embodiment. Further, in Fig. 5, the electrode pattern constituting the circuit different from the band pass filter of the present embodiment is also described. Hereinafter, only the portion related to the band pass filter will be described. Further, the circular marks indicated in the respective dielectric layers pL1 to i to pli 12 in Fig. 5 indicate conductive via holes. In addition, in FIG. 5, only the dielectric layer related to the band pass filter is described, and the configuration other than the dielectric layer for realizing the band pass filter is omitted, and the description thereof is omitted. First, the circuit configuration will be described with reference to Fig. 4 . In the band pass filter of the present embodiment, the series circuit including the first series inductor L1A and the second series inductor L1B is connected, and the connection point between the first series inductor L1A and the second series inductor L1B is The shunt inductor L2 is connected to the ground potential. The first tandem capacitor C1A is connected between the λ series inductor L1A and the first input/output terminal p〇rt丨. A second series capacitor C1B is connected between the second serial inductor LIB and the second input/output terminal Port2. A first shunt capacitor C3 is connected between the shunt inductor L2 and the ground potential. The connection point between the first series inductor L1A and the first series capacitor c丨A is connected to the connection point of the shunt inductor L2 and the first 8 14 201249102 shunt capacitor C3 through the second shunt capacitor C2A. The connection point between the second series inductor 11B and the second series capacitor 匸1b is connected to the connection point of the shunt inductor L2 and the current capacitor C3 through the third shunt capacitor C2B. The third series capacitor C0 is connected between the first input/output terminal Pom and the second input/output terminal p〇rt2. Next, the laminated structure will be described with reference to Fig. 5 . A plate electrode for the third series capacitor c is formed in the dielectric layer 1 〇 1 which is the first layer of the band pass filter. The dielectric layer 102 is formed with a third series capacitor c〇, an i-th serial capacitor C1A, and a second series capacitor (the plate electrode for the first series). The dielectric layer PL1〇3 corresponds to the dielectric layer pu, and is formed with τ. The linear electrode for rewinding the inductor circuit. The dielectric layer PL104 is formed with the linear electrode of the shunt inductor L2 corresponding to the above-mentioned negative dielectric layer PL2, and is formed on the dielectric layer PL105. There is a rewinding electrode for connecting the shunt inductor L2 to the ground potential. The two dielectric layers _'PLl07, PL1〇8 correspond to the above dielectric layers - MB 4, PL5, respectively, 'the first series inductor The linear electrode system for the UA and the second series inductance (4) is formed as a spiral (four) in the lamination direction. The dielectric layer PL1〇9 is formed with a plate electrode that is common to the second tandem capacitor (10) and the first container. In the dielectric layer, the plate f electrode of the second series capacitor C1B 盥 士 is formed. / The third circuit capacitor C2B is shared 15 201249102 The plate electrode for the second shunt capacitor C2A is formed in the dielectric layer PL 110. The third shunt capacitor C2B is used In the dielectric layer PL111, the plate electrode for the series-parallel capacitor C1A and the plate electrode for the second series capacitor C1B are formed. The plate electrode for the shunt capacitor C3 is formed in the dielectric layer PL112. The other plate electrode for the shunt capacitor C3 is a ground electrode formed on a dielectric layer (not shown). The band-pass filter configured as described above can adjust the electromagnetic field between the series inductors Ua, L1B and the shunt inductor L2. Coupling, adjusting the filter characteristics. Fig. 6 is a pass characteristic diagram of the band pass filter of the present embodiment and a band pass filter of a conventional configuration. Fig. 6 (A), (D) are conventionally known band pass filters. The pass characteristic diagram. Fig. 6(B) is a characteristic diagram of the case where the parallel inductor is coupled to the shunt inductor electromagnetic field in such a manner that the mutual inductance Μ becomes a positive value in the same circuit configuration as Fig. 6(A). (C) is a characteristic diagram of the case where the parallel inductor is connected to the shunt inductor electromagnetic field in the same circuit configuration as that of FIG. 6 (Α), and the cross-link inductor is negatively connected. FIG. 6(D) is FIG. (Α) Make the inductance value of the shunt inductor change The pass-through characteristic diagram of the case of the case is also shown. In addition, the band pass filter shown in Fig. 6 is a band pass filter composed of the equivalent circuit shown in Fig. 4. Further, the filter characteristics shown in Fig. 6 are simulated by The component values of the respective circuit elements are set as follows. In Fig. 6 (Α), (Β), (C), (D), the first series inductor L1 Α and the second series inductor The inductance of [1Β is 2.0nH. The capacitance of the first series capacitor cia, the second series capacitor C1B, the second shunt capacitor C2A, and the third shunt capacitor C2B is 0.75 pF. The capacitance of the third series capacitor c〇 is 〇24pF. In addition, 16 8 201249102 The first shunt capacitor C3 is set to the on state (capacitance is 〇F) e On the other hand, in Fig. 6 (A), (B), (c), the inductance of the shunt inductor L2 is l.lnH . In Figs. 6(B) and (C), the inductances of the partial inductors L2A and L2B of the shunt inductor L2 are 〇 5nH, and the inductance of the partial inductor L2' is 〇·1ηΗ. In Fig. 6(D), the inductance HH of the shunt inductor L2. Further, in Figs. 6(B) and 6(C), the coupling coefficient of the ith series inductor L1A and the second series inductor L1B and the shunt inductor L2 is 〇1. In this case, the absolute value of the interaction inductance Μ is 〇 UH. As a result of performing such a simulation, as shown in FIGS. 6(A), (B), and (c), even if the same circuit configuration 'by adjusting the electromagnetic field coupling of the series inductor and the shunt inductor, the configuration can be different. Characteristic bandpass filter. Specifically, 'determine the inductance of the two series inductors and the shunt inductors' as shown in Figure 6(A), as shown in Figure 6 (with respect to the electromagnetic field coupling characteristics of the series inductors and shunt inductors). B), the interaction inductance M becomes a positive value, and the inductance of the signal of the shunt inductor is reduced by twice the amount of the mutual inductance ,, which can become a narrower band characteristic, and a large attenuation of the attenuation side of the low frequency side is obtained. Decrease. Further, as shown in Fig. 6(c), the mutual inductance Μ becomes a positive value, and the inductance of the signal of the shunt inductor is increased by twice the amount of the mutual inductance ,, which can become a wider band characteristic. Moreover, as shown in Fig. 6(C) and Fig. 6(D), by adjusting the electromagnetic field coupling of the series inductor and the shunt inductor, even if the inductance of the shunt inductor is different, the same pass characteristic can be formed. Device. Specifically, in FIG. 6(c), although the inductance of the shunt inductor L2 is 1·1 nH, the inductance of the shunt inductor L2 shown in FIG. 6(D) is 1.3 nH. Scenario 17 201249102 Same pass characteristics. This 舆 相对 relative interaction inductance] VI is 0_ 1 nH increased by twice its 0.2nH equal. Such as f·, +· , '
哥々上迷，藉由調整第1串列電感器L1A 及第2串列電感器L1B與分流電感器L2之電磁場耦合量, 此等不會電磁場耦纟’可實現由不同分流電感器之電感構 成之濾波器特性。 尤其是，如上述，藉由以分流電感器之電感增加之方 式麵合’即使使用由相同電極寬度且相同電極長度構成之 相同捲繞形之線狀電極，亦能使電感增加。相反地，若實 現相同電感，則能縮短電極長度H能使積層體小型 化。又，若實現相同電感，則能增加電極寬度。藉此，能 降低傳送損耗，使濾波器之Q值提升。 又，如上述，在串列電感器之電介質層與分流電感器 之電介質層之間不設置接地電極層亦可，因此能使積層體 薄型化。 此外’在上述帶通濾波器之積層構成，第1串列電感 器L1A、第1串列電容器C1A、第2分流電容器C2A之形 成區域構成為從頂面側觀察積層體重疊。另一方面，第2 串列電感器L1B、第2串列電容器C1B、第3分流電容器 C2B之形成區域構成為從頂面側觀察積層體重疊。此外， 此等二個區域構成為從頂面側觀察積層體不重疊。藉由此 種積層構成，可防止在積層基板内之電路元件間之不需要 之電磁場耦合。藉此，可更正確地實現由上述特性構成之 帶通濾波器。 又，上述說明中’雖以帶通濾波器為例進行說明，但 18 201249102 只要具備Ί型電感益電路，則亦可實現例如圖7、圖8所示 之帶通濾波器。圖7係本發明實施形態之帶通濾波器之等 效電路圖。圖8係圖7所示之本實施形態之高通濾波器之 各層圖。此外，圖8中，與圖5同樣地僅說明必要部位， 其他部位之圖示則局部省略，且說明亦省略。又，記載在 圖8之各電介質層PL201〜PL208之圓形標記表示導電性通 孔。 首先，參照圖7說明電路構成。 高通濾波器具備串聯於第3輸出入端子Port3與第4輸 出入端子Port4之間之串列電感器L5A，L5B。在串列電感 器L5A並聯有電容器C5A。在串列電感器L5B連接有電容 器C5B。串列電感器L5 A與串列電感器L5B之連接點係透 過分流電感器L6與電容器C6之串聯電路連接至接地電位。 接著，參照圖8說明積層構造。 在作為高通濾、波器之第1層即電介質層PL20 1及電介 質層PL202形成有構成串列電感器L5A，L5B之線狀電極。 在電介質層PL203, PL204, PL205形成有配線用之導電 性通孔。 在電介質層PL206, PL207, PL208形成有構成分流電感 器L6之線狀電極。 構成串列電感器L5A，L5B之線狀電極與構成分流電感 器L6之線狀電極係形成為從積層體之頂面側觀察分別局部 重疊。藉由此構造，產生串列電感器L5A，L5]B與分流電感 器L6之間之交互電感。此外’藉由上述構成，可獲得與上 19 201249102 述帶通濾波器相同之作用效果。 又’上述說明中’雖例示沿著積層方向產生串聯於訊 號線之二個串列電感器與連接於此等之連接點與接地電位 之間之分流電感器之間之電磁場搞合，但亦可在電介質層 内產生。圖9係顯示在單一電介質層、二個串列電感器LiA， L 1 B與分流電感器L2電磁場耦合之情形之積層構造例之部 分層圖。圖ίο係顯示二個串列電感器L1A，L1B與分流電 感器L2分別在不同電介質層内電磁場耦合之情形之積層構 造例之部分層圖。 圖9所不之構成之情形，構成第i串列電感器li a與 第2串列電感器LIB之線狀電極，以與上述圖2、圖3相同 之捲繞形狀形成在電介質層pL1A，pL2A，pL3A。構成分流 電感器L2之線狀電極，以與上述圖2、圖3相同之捲繞形 狀形成在電"質層PL 1A。此時’構成分流電感器L2之線 狀電極，係配置在構成帛i串列電感器Li A之線狀電極與 構成第”列電^ UB之線狀電極之間。再者，構成分The brothers are fascinated by adjusting the electromagnetic field coupling amount of the first series inductor L1A and the second series inductor L1B and the shunt inductor L2. These electromagnetic field couplings can realize the inductance of different shunt inductors. The filter characteristics that make up. In particular, as described above, by increasing the inductance of the shunt inductor, the inductance can be increased even if a linear electrode having the same winding shape and having the same electrode width and the same electrode length is used. Conversely, if the same inductance is achieved, the electrode length H can be shortened to make the laminate smaller. Moreover, if the same inductance is achieved, the electrode width can be increased. Thereby, the transmission loss can be reduced and the Q value of the filter can be increased. Further, as described above, since the ground electrode layer is not provided between the dielectric layer of the tandem inductor and the dielectric layer of the shunt inductor, the laminated body can be made thinner. Further, in the laminated structure of the band pass filter, the formation regions of the first tandem inductor L1A, the first tandem capacitor C1A, and the second shunt capacitor C2A are configured such that the laminated body overlaps as viewed from the top surface side. On the other hand, the formation regions of the second tandem inductor L1B, the second tandem capacitor C1B, and the third shunt capacitor C2B are configured such that the laminated body overlaps as viewed from the top surface side. Further, the two regions are configured such that the laminate does not overlap as viewed from the top surface side. With such a laminated structure, unnecessary electromagnetic field coupling between circuit elements in the laminated substrate can be prevented. Thereby, the band pass filter composed of the above characteristics can be realized more accurately. Further, in the above description, the band pass filter will be described as an example. However, as long as the Ί-type inductor circuit is provided, 18 201249102, for example, the band pass filter shown in Figs. 7 and 8 can be realized. Fig. 7 is a circuit diagram showing an equivalent circuit of a band pass filter according to an embodiment of the present invention. Fig. 8 is a view showing each layer of the high-pass filter of the embodiment shown in Fig. 7. In addition, in FIG. 8, only the necessary part is demonstrated similarly to FIG. 5, and the illustration of the other part is partially abbreviate|omitted, and description is abbreviate|omitted. Further, the circular marks described in the respective dielectric layers PL201 to PL208 of Fig. 8 indicate conductive vias. First, the circuit configuration will be described with reference to Fig. 7 . The high-pass filter includes a series inductor L5A, L5B connected in series between the third input/output terminal Port3 and the fourth input/output terminal Port4. A capacitor C5A is connected in parallel with the series inductor L5A. A capacitor C5B is connected to the series inductor L5B. The connection point between the series inductor L5 A and the series inductor L5B is connected to the ground potential through a series circuit of the shunt inductor L6 and the capacitor C6. Next, a laminated structure will be described with reference to Fig. 8 . A linear electrode constituting the series inductors L5A, L5B is formed in the dielectric layer PL20 1 and the dielectric layer PL202 which are the first layers of the high-pass filter and the wave device. Conductive via holes for wiring are formed in the dielectric layers PL203, PL204, and PL205. Linear electrodes constituting the shunt inductor L6 are formed in the dielectric layers PL206, PL207, and PL208. The linear electrodes constituting the series inductors L5A, L5B and the linear electrode system constituting the shunt inductor L6 are formed so as to partially overlap each other as viewed from the top surface side of the laminated body. With this configuration, the mutual inductance between the series inductors L5A, L5] B and the shunt inductor L6 is generated. Further, with the above configuration, the same operational effects as those of the band pass filter described in the above 19 201249102 can be obtained. In the above description, although the electromagnetic field between the two series inductors connected in series with the signal line and the shunt inductor connected between the connection point and the ground potential is generated along the lamination direction, Can be produced within the dielectric layer. Fig. 9 is a partial layer diagram showing a laminated structure example in the case where a single dielectric layer, two series inductors LiA, L 1 B and an shunt inductor L2 are electromagnetically coupled. Figure ίο is a partial layer diagram showing a laminated construction example in which two series inductors L1A, L1B and shunt inductor L2 are respectively coupled in an electromagnetic field in different dielectric layers. In the case of the configuration of FIG. 9, the linear electrodes constituting the i-th series inductor li a and the second tandem inductor LIB are formed in the dielectric layer pL1A in the same winding shape as that of FIGS. 2 and 3 described above. pL2A, pL3A. The linear electrode constituting the shunt inductor L2 is formed in the electric "plasma layer PL 1A in the same winding shape as that of Figs. 2 and 3 described above. At this time, the linear electrode constituting the shunt inductor L2 is disposed between the linear electrode constituting the 帛i series inductor Li A and the linear electrode constituting the first column UB.
流電感器L2之線狀電極’係以與構成第1串列電感器L1A 之線狀電極之間隔和與構成第2串列電感器L1B之線狀電The linear electrode of the current inductor L2 is spaced apart from the linear electrode constituting the first series inductor L1A and the linear electric current constituting the second series inductor L1B.
極之間隔相同之方式配置。又’再者，構成分流電感器U 之線狀電極，係以與構成第1串列電感器L1A之線狀電極 對向之長度和與構成第2串列電感器lib之線狀電極對向 之長度相同之方式配置。 圖1 〇所示之構成之情形 線狀電極’以與上述圖The poles are configured in the same way. Further, the linear electrode constituting the shunt inductor U is opposed to the linear electrode constituting the first tandem inductor L1A and the linear electrode constituting the second tandem inductor lib The length is configured in the same way. Figure 1 shows the configuration of the line electrode ' with the above figure
構成第1串列電感器LI A 2、圖3相同之捲繞形狀形成在電 之 介 201249102 質層PL2B:, PL3B，PL4B。構成第2串列電感器LIB之線狀 電極，以與上述圖2、圖3相同之捲繞形狀形成在電介質層 PL1B，PL2B，PL3B。構成分流電感器L2之線狀電極，以與 上述圖2、圖3類似之捲繞形狀形成在電介質層pL1B， PL2B。此時’構成分流電感器L2之線狀電極，係配置在構 成第1串列電感器L1A之線狀電極與構成第2串列電感器 L 1 B之線狀電極之間。再者，構成分流電感器L2之線狀電 極，係以與構成第1串列電感器L1A之線狀電極在電介質 層PL2B之間隔和與構成第2串列電感器L1B之線狀電極 在電介質層PL1B之間隔相同之方式配置。又，再者，構成 分流電感器L2之線狀電極，係以與構成第1串列電感器[i A 之線狀電極在電介質層PL2B對向之長度和與構成第2串列 電感器L1B之線狀電極在電介質層pL丨b對向之長度相同 之方式配置。 即使為上述圖9、圖1〇所示之構成，亦可獲得與在上 述積層方向電磁場耦合之構成相同之作用效果。 此外，上述說明中，雖顯示串聯於訊號線之二個串列 電感器對分流電感器之電磁場耦合量相同之情形，但藉由 使其不同，刻意地調整串列電感器之電感亦可。 【圖式簡單說明】 圖1(A)、（B)係用以顯示易於理解本發明實施形態之τ 型電感g電路之等纟電路圖及電磁場耗纟關係之電路圖。 圖2係實現本實施形態之τ型電感器電路之積層體ι〇ι 21 201249102 之分解立體圖。 圖3係實現本實施形態之T型電感器電路之積層體1〇1 之各層圖。 圖4係本實施形態之帶通濾波器之等效電路圖。 圖5係本實施形態之帶通濾波器之各層圖。 圖6(A)〜(D)係包含本實施形態之T型電感器電路之帶 通濾波器及習知構成之帶通濾波器之通過特性圖。 圖7係本發明實施形態之帶通濾波器之等效電路圖。 圖8係本實施形態之尚通遽波益之各層圖。 圖9係顯示在單一電介質層、二個串列電感器L1A，L1B 與分流電感器L2電磁場耦合之情形之積層構造例之部分層 圖。 圖10係顯示二個串列電感器L1A，L1B與分流電感器 L2分別在不同電介質層内電磁場耦合之情形之積層構造例 之部分層圖。 【主要元件符號說明】 100 積層體 101，101A，101B，102, 121，122, 123, 103A，103B，104A， 104B, 105A, 105B 線狀電極 131A, 131B, 133A, 133B 線狀部 132A, 132B 中間線狀部 L1A, L1B 串列電感器 L2 分流電感器 ⑧ 201249102 L2A’，L2B’，L2’’ 部分電感器 PL1, PL2, PL3, PL4, PL5, PL101 〜PL112, PL201 〜PL208, PL1A〜PL3A，PL1B〜PL4B 電介質層 VH12, VH13A, VH13B, VH34A, VH34B, VH45A, VH45B 導電性通孔 23The first tandem inductor LI A 2 and the same winding shape as in Fig. 3 are formed in the electrical layer 201249102, the layer PL2B:, PL3B, and PL4B. The linear electrodes constituting the second tandem inductor LIB are formed in the dielectric layers PL1B, PL2B, and PL3B in the same winding shape as in Figs. 2 and 3 described above. The linear electrodes constituting the shunt inductor L2 are formed in the dielectric layers pL1B, PL2B in a wound shape similar to that of Figs. 2 and 3 described above. At this time, the linear electrode constituting the shunt inductor L2 is disposed between the linear electrode constituting the first tandem inductor L1A and the linear electrode constituting the second tandem inductor L 1 B. Further, the linear electrode constituting the shunt inductor L2 is in the dielectric between the linear electrode constituting the first series inductor L1A and the dielectric layer PL2B and the linear electrode constituting the second serial inductor L1B. The layers PL1B are arranged in the same interval. Further, the linear electrode constituting the shunt inductor L2 is formed so as to be the length of the linear electrode constituting the first tandem inductor [i A in the dielectric layer PL2B and to constitute the second tandem inductor L1B. The linear electrodes are arranged such that the lengths of the dielectric layers pL丨b are the same. Even in the configuration shown in Fig. 9 and Fig. 1 described above, the same operational effects as those in the electromagnetic field coupling in the lamination direction described above can be obtained. Further, in the above description, although the electromagnetic field coupling amounts of the two series inductors connected in series to the signal line to the shunt inductor are the same, the inductance of the series inductor may be deliberately adjusted by making it different. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(A) and FIG. 1(B) are circuit diagrams showing an isometric circuit diagram and an electromagnetic field consumption relationship of a τ-type inductor g circuit in which the embodiment of the present invention is easily understood. Fig. 2 is an exploded perspective view showing the laminated body ι〇ι 21 201249102 of the τ-type inductor circuit of the present embodiment. Fig. 3 is a view showing the respective layers of the laminated body 1〇1 of the T-type inductor circuit of the present embodiment. Fig. 4 is an equivalent circuit diagram of the band pass filter of the embodiment. Fig. 5 is a view showing each layer of the band pass filter of the embodiment. Fig. 6 (A) to (D) are transmission characteristic diagrams of a band pass filter including a T-type inductor circuit of the present embodiment and a band pass filter of a conventional configuration. Fig. 7 is an equivalent circuit diagram of a band pass filter according to an embodiment of the present invention. Fig. 8 is a view showing each layer of the present invention. Fig. 9 is a partial layer diagram showing a laminated structure example in the case where a single dielectric layer, two series inductors L1A, L1B and an shunt inductor L2 are electromagnetically coupled. Fig. 10 is a partial layer diagram showing a laminated structure example in which two series inductors L1A, L1B and shunt inductor L2 are electromagnetically coupled in different dielectric layers, respectively. [Description of Main Components] 100 Laminates 101, 101A, 101B, 102, 121, 122, 123, 103A, 103B, 104A, 104B, 105A, 105B Linear electrodes 131A, 131B, 133A, 133B Linear portions 132A, 132B Intermediate Linear L1A, L1B Tandem Inductor L2 Shunt Inductor 8 201249102 L2A', L2B', L2'' Partial Inductors PL1, PL2, PL3, PL4, PL5, PL101 ~ PL112, PL201 ~ PL208, PL1A ~ PL3A , PL1B to PL4B dielectric layers VH12, VH13A, VH13B, VH34A, VH34B, VH45A, VH45B conductive vias 23