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TW201248903A - Sputtering target for forming transparent film for solar cells, and process for production thereof - Google Patents

Sputtering target for forming transparent film for solar cells, and process for production thereof Download PDF

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TW201248903A
TW201248903A TW101104037A TW101104037A TW201248903A TW 201248903 A TW201248903 A TW 201248903A TW 101104037 A TW101104037 A TW 101104037A TW 101104037 A TW101104037 A TW 101104037A TW 201248903 A TW201248903 A TW 201248903A
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powder
sputtering target
transparent film
sputtering
zno
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TW101104037A
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Chinese (zh)
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TWI556465B (en
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Gou Yamaguchi
shou-bin Zhang
Yuichi Kondou
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Mitsubishi Materials Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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Abstract

Provided are: a sputtering target for forming a transparent film for solar cells, which can achieve the DC sputtering of a ZnO-SiO2-Al2O3 film that has a lower refractive index than that of an AZO film; and a process for producing the sputtering target. The sputtering target comprises a sintered oxide material having a component composition comprising 0.3-4.0 wt% of Al, 6.0-14.5 wt% of Si and a remainder made up by Zn and unavoidable impurities in which all of the amounts are expressed relative to the total amount of all of the metal components, wherein composite oxides Zn2SiO4 and ZnO are contained in the structure of the sintered material. The process for producing the sputtering target comprises: a step of mixing an Al2O3 powder, an SiO2 powder and a ZnO powder together at such a proportion that Al2O3 is contained in an amount of 0.5-5.0 wt%, SiO2 is contained in an amount of 10-22 wt% and the remainder is made up by ZnO and unavoidable impurities, thereby producing a mixed power; and a step of sintering the mixed powder under vacuum by hop pressing.

Description

201248903 六、發明說明： 【發明所屬之技術領域】 本發明有關很適合作爲薄膜太陽電池（thin film solar cell)用之低折射率的透明膜之Zn0-Si02-Al203(氧化鋅-二 氧化矽-三氧化二鋁）膜的成膜之太陽電池用透明膜形成用 灘鍍靶（sputtering target)及其製造方法。 【先前技術】 近年來，薄膜太陽電池已開始提供爲實用。此種薄膜 太陽電池，具有形成有 AZ0(Al-Zn-0: Aluminium doped Zinc Oxide:摻雜有鋁之氧化鋅）等的透明電極層（transparent electrode layer)、再於該透明電極層上形成有爲防止反射 用之低折射率的透明膜之基本構造。 上述低折射率的透明膜，係配置於透明導電膜（ transparent conductive film)的上面藉以緩和與大氣之間的 折射率的變化而防止反射之用所設置者。 在來，例如專利文獻1中所記載，透明導電層上之低 折射率透明膜，係由MgF2(氟化鎂）所形成者。 又，例如專利文獻2中所記載，爲抑制各層的折射率 差爲小，抑制在界面的反射以增大到達受光面（light reception surface)之光量起見、爲連續性增大折射率起見，形成有 多層的防反射塗膜（anti-reflection coating)。 [先前技術文獻] [專利文獻] -5- 201248903 [專利文獻1]日本專利特開2001-257374號公報 [專利文獻2]日本專利特開平7-235684號公報 【發明內容】 [發明所欲解決之課題] 上述在來技術中’尙留存有下述的課題。 亦即’低折射率的透明膜而言，在來，在採用折射率 1·37(對波長550nm的光）的MgF2膜，惟由於該MgF2膜下 的透明導電層之AZO膜的折射率爲1.8(對波長5 50nm的 光）之故，因兩者的折射率差而有發生相當不少程度之光 反射之問題。因此，希望開發一種使具有較AZO膜爲低 ，而接近MgF2膜之折射率之透明膜介在兩者之間，以使 階段性變化折射率，藉以抑制光的反射之作法。又，希望 開發一種能將此種太陽電池用透明膜，利用生產性優異的 DC (直流）濺鍍進行成膜之濺鍍靶。 本發明乃係鑑於前述之課題所開發者，其目的在於提 供一種能將較AZO膜之折射率爲低的Zn0-Si02-Al203膜 進行DC濺鍍之太陽電池用透明膜形成用濺鍍靶及其製造 方法。 [用以解決課題之手段] 本發明人等根據，如使AZ0膜中含有Si〇2則折射率會降 低之事贲，爲製造能作爲太陽電池用透明膜之Zn〇_Si〇2_Al2〇3 膜之成膜之濺鍍靶起見，進行硏究。於此硏究中’如將 -6- 201248903201248903 VI. Description of the Invention: [Technical Field] The present invention relates to Zn0-SiO 2 -Al 203 (zinc oxide-cerium oxide - which is suitable as a low refractive index transparent film for thin film solar cells A sputtering target for forming a transparent film for forming a solar cell for forming a film of a film of aluminum oxide, and a method for producing the same. [Prior Art] In recent years, thin film solar cells have begun to be provided as practical. The thin film solar cell has a transparent electrode layer formed with AZ0 (Al-Zn-0: Aluminium doped Zinc Oxide), and further formed on the transparent electrode layer. The basic structure of a transparent film having a low refractive index for preventing reflection. The transparent film having a low refractive index is disposed on the upper surface of the transparent conductive film to relax the change in the refractive index with the atmosphere to prevent reflection. For example, as described in Patent Document 1, the low refractive index transparent film on the transparent conductive layer is formed of MgF2 (magnesium fluoride). Further, for example, as disclosed in Patent Document 2, in order to suppress the difference in refractive index of each layer, it is possible to suppress reflection at the interface to increase the amount of light reaching the light reception surface, and to increase the refractive index for continuity. A multilayer anti-reflection coating is formed. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-257374 [Patent Document 2] Japanese Patent Laid-Open No. Hei 7-235684 Problem] In the above-mentioned technology, there are the following problems. That is, in the case of a transparent film having a low refractive index, a MgF2 film having a refractive index of 1.37 (light of a wavelength of 550 nm) is used, but the refractive index of the AZO film of the transparent conductive layer under the MgF2 film is 1.8 (for light with a wavelength of 50 nm), a considerable amount of light reflection occurs due to the difference in refractive index between the two. Therefore, it has been desired to develop a method in which a transparent film having a lower refractive index than the AZO film and having a refractive index close to that of the MgF2 film is interposed therebetween so as to change the refractive index stepwise, thereby suppressing reflection of light. Further, it has been desired to develop a sputtering target which can form a transparent film for a solar cell by DC (direct current) sputtering which is excellent in productivity. The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a sputtering target for forming a transparent film for solar cell which can perform DC sputtering on a Zn0-SiO 2 -Al 203 film having a lower refractive index than an AZO film. Its manufacturing method. [Means for Solving the Problem] The present inventors have made it possible to produce a Zn〇_Si〇2_Al2〇3 which can be used as a transparent film for solar cells, if the AZ0 film contains Si〇2, and the refractive index is lowered. For the sputtering target of film formation, the film is investigated. In this study, 'will be -6- 201248903

Al2〇3粉末與Si〇2粉末與ZnO粉末之混合粉末在大氣中燒 成或氮氣氣氛中燒成以製作濺鍍靶之情形，發生Si02與 ZnO進行反應而成爲複合氧化物（compound oxide)，並且 電阻升高爲1x1 〇6Ω /cm2以上而發生異常放電，以致不能 進行DC濺鍍之問題。又，如將Si02的含量設定爲少量時 ，雖然依上述製法仍能製得低電阻的濺鍍靶，惟利用該濺 鍍靶之成膜時，則不能獲得作爲太陽電池用透明膜所要求 之低折射率。於是，本發明人等再進行硏究之結果發現， 如成分組成控制爲既定範圍以實施熱壓（hot pressing)時， 則可製得低電阻且能進行良好的DC濺鍍之濺鍍靶，如使 用該濺鍍靶以進行濺鍍成膜時則可製得一種低折射率之 Zn0-Si02-Al203 膜之事實。 因而，本發明係根據上述心得所開發者，爲解決前述 課題起見，採用如下述之構成。亦即，本發明之濺鍍靶， 係由具有對全金屬成分量含有A1: 0.3至4.0 wt(重量）％、 Si : 6.0至14.5 wt%、餘部爲由Zn以及不可避免之不純物 所成之成分組成之氧化物燒結體所成者，其特徵爲：該燒 結體的組織中存在有複合氧化物Zn2 Si 04及ZnO。 由於此種太陽電池用透明膜形成用濺鍍靶，係由具有 對全金屬成分量含有 A1 : 0.3至 4.0wt%、Si : 6.0至 1 4.5 wt %、餘部爲由Zn以及不可避免之不純物所成之成分 組成之氧化物燒結體所成，而於該燒結體的組織中存在有 複合氧化物Zn2Si04及ZnO之故，複合氧化物Zn2Si04與 ZnO共存於組織中而藉以獲得導電性，除能進行良好的 201248903 DC濺鍍之同時，尙可製得較AZO膜爲低折射率且適合於 太陽電池用透明膜之Zn0-Si02-Al203膜。 在此，將上述A1的含量作成0.3至4.0wt°/〇之理由’ 係如在0.3 wt%以下時，則由於不能獲得足夠的導電性而 發生異常放電，以致不能實施DC濺鍍之故’如在4.0wt% 以上時，則由於將發生起因於所產生之Al2〇3與ZnO的複 合氧化物ZnAl204之異常放電’以致不能實施DC濺鍍之 故。 又，將上述Si的含量作成6.0至14.5wt%之理由，係 如在6.Owt%以下時，則由於不能獲得降低折射率之充分 的效果而發生異常放電，以致不能實施DC濺鍍之故，如 在14.5 wt%以上時，則由於不能獲得足夠的導電性而發生 異常放電，以致不能實施DC濺鍍之故》 又，本發明之太陽電池用透明膜形成用濺鍍靶之特徵 爲：前述燒結體的密度，係以理論密度比（theoretical density ratio)計，爲 100 至 108%。 由於該太陽電池用透明膜形成用濺鍍靶，係燒結體的 密度爲理論密度的100至108%之故，除能實施DC濺鑪之 同時，尙可抑制靶龜裂。 亦即，將上述燒結體的密度以理論密度比計，作成 100至108%之理由，係如在100%以下時，則由於會發生 靶龜裂等問題之故，如在1 〇 8 %以上時，則由於殆全部將 成爲複合氧化物Zn2Si04的組織，以致不能實施藉由DC 濺鍍之放電之故。 -8- 201248903 在此，爲理論密度的計算上，採用ZnO: 5.61g/Cm3、 Si02 : 2·20 g/cm3、Al2〇3 : 3.99 g/cm3 之値進行計算。 又’本發明之太陽電池用透明膜形成用濺鍍靶之特徵 爲：體電阻（bulk resistance)，爲 1Ω · cm 以下。 亦即，由於該太陽電池用透明膜形成用濺鍍靶，係體 電阻在1 Ω · cm以下之故，能穩定進行良好的DC濺鍍。 本發明之太陽電池用透明膜形成用濺鍍靶之製造方法 ，係製作上述太陽電池用透明膜形成用濺鍍靶之方法，其 特徵爲：包含；將Al2〇3粉末與Si02粉末與ZnO粉末， 按能成爲由 Al2〇3: 0.5 至 5.0wt%、Si02: 10 至 22wt%、 餘部·· ZnO以及不可避免之不純物所成之方式混合以作成 混合粉末之過程、及將前述混合粉末在真空中使用熱壓機 (hot press)以進行燒結之過程。 亦即，於該太陽電池用透明膜形成用濺鍍靶之製造方 法中，由於依上述的範圍混合ai2o3粉末與Si02粉末與 ZnO粉末以作成混合粉末之過程後，將前述混合粉末在真 空中使用熱壓機以進行燒結之故，能穩定地實施良好的 DC濺鎪，且可製作能進行低折射率透明膜之成膜之濺鍍 耙。 [發明之效果] 如採用本發明，則可發揮如下述之效果。 亦即，如採用有關本發明之太陽電池用透明膜形成用 濺鍍靶，則由於由具有對全金屬成分量含有：A1: 0.3至 -9- 201248903 4.0wt%、Si: 6.0至14.5wt%、餘部爲由Zn以及不可避免 之不純物所成之成分組成之氧化物燒結體所成，而於該燒 結體的組織中存在有複合氧化物Zn2Si04及ZnO之故，可 製得一種除能進行良好的DC濺鍍之同時，尙較AZO膜之 折射率爲低且適合於太陽電池用透明膜之Zn0-Si02-Al203 膜。如採用本發明之濺鍍靶之製造方法，而將經依上述的 範圍混合Al2〇3粉末與Si02粉末與ZnO粉末之混合粉末 ，在真空中使用熱壓機進行燒結後，則可製作上述濺鍍靶 〇 因而，在經採用本發明之濺鍍靶並藉由DC濺鍍所成膜 之太陽電池用透明膜，可獲得作爲薄膜太陽電池的AZO膜（ 透明電極層）上所形成之防止反射用之透明膜所要求之低折 射率，且能以低成本製作轉換效率（convertion efficiency) 良好的薄膜太陽電池。 [發明之最佳K施形態] 以下，在參考第1圖及第2圖之下，將有關本發明之 太陽電池用透明膜形成用濺鍍靶及其製造方法之一實施形 態加以說明。 本實施形態之太陽電池用透明膜形成用濺鍍靶，係由 具有對全金屬成分量含有：A1: 0.3至4.0wt%、Si : 6.0 至14.5 wt%、餘部爲由Zn以及不可避免之不純物所成之 成分組成之氧化物燒結體所成，於該燒結體之組織中存在 有複合氧化物Zn2Si04及ZnO之靶。 -10- 201248903 又，該濺鍍靶，係燒結體的密度爲理論密度之100至 108 %者。再者，該濺鍍靶，係體電阻爲IQ· cin以下者 〇 製作本實施形態之太陽電池用透明膜形成用濺鍍靶之 方法，包含；將Ah〇3粉末與Si02粉末與ZnO粉末，按 能成爲由 Al2〇3: 〇.5 至 5_0wt%、S丨02: 10 至 22wt%、餘 部：ZnO以及不可避免之不純物所成之方式混合以作成混 合粉末之過程、及將前述混合粉末在真空中使用熱壓機以 進行燒結之過程。 如就上述製法之一例加以詳述時，則例如，第1圖所 不般’首先將Al2〇3粉末與Si〇2粉末與ZnO粉末按能成 爲上述含量範圍之方式進行稱量，使用濕式球磨機加以粉 碎·混合以製作混合粉末。例如，將經稱量所得之各粉末 及氧化鉻球置入聚乙烯容器（聚乙烯製壺）中，使用球磨機 裝置進fr濕式混合既定時間，以作成混合粉末。在此，爲 溶劑，則例如，採用乙醇。 · 其次’將所得之混合粉末乾燥後，過篩例如，篩孔： 250μηι的篩子並造粒、再在真空乾燥後，例如在】2〇(rCT 5小時，以200kgf(千克力）/Cm2的壓力、在真空中進行熱 壓以作成燒結體。在此，熱壓溫度，較佳爲11〇〇至1250 C的範圍’壓力較佳爲150至350kgf/cm2之範圍》 經如此方式熱壓之燒結體，通常採用放電加工、切削 或磨削技法機械加工爲耙的指定形狀，將加工後的耙以 In(銦）作爲銲劑’並黏合（bonding)於由Cu(銅）或SUS(不鏽 -11 - 201248903 鋼）或者其他金屬（例如’ Mo(鉬））所成之背板（backing plate)以供爲濺鍍之用。 在此，其他的製造方法而言，亦可爲將上述製造方法 所採用之濕式球磨機之粉碎、混合，以純水作爲溶劑並使 用內容積300L(公升）的球磨機裝置替代實施，然後，經由 噴霧乾燥所乾燥造粒者，再使用乾式球磨機加以撕碎，並 將該撕碎粉末按與上述同樣方式進行熱壓之方法。又，亦 可爲經省略使用上述乾式球磨機之撕碎過程。 經使用該本實施形態之濺鍍靶實施DC濺鎞之太陽電 池用透明膜，具有含有Αΐ2〇3: 〇·5至5.0wt%、Si〇2: 10 至22wt%、餘部爲由ZnO以及不可避免之不純物所成之成 分組成。 經採用此種太陽電池用透明膜之薄膜太陽電池，例如 第2圖所示，係於驗石灰玻璃基板（soda lime glass board)l上 依序層合：Mo(鉬）後面電極（rear-face electrode)2、CIGS(銅 銦鎵硒）吸收層3、屬於η型半導體層之ZnO(氧化鋅）， ZnS(硫化鋅），ZnOH(氫氧化鋅），CdS(硫化鎘）等的緩衝層 (buffer layer)4、屬於高電阻層之i(異）ZnO緩衝層5、屬 於上部透明電極層之AZO電極6、防反射膜7a、7b、以 及表面電極8、所構成，其中，屬於M gF2(氟化鎂）膜之防 反射膜7b與AZO電極6之間的防反射膜7a，即爲本责施 形態之太陽電池用透明膜。 於如此之本實施形態之太陽電池用透明膜形成用濺鍍 靶中，由於由具有對全金厕成分量含有A1: 0.3至4.0wt% -12- 201248903 ' Si: 6.0至14.5wt%、餘部爲由Zn以及不可 物所成之成分組成之氧化物燒結體所成、而於 組織中存在有複合氧化物Zn2Si04及ZnO之故 中共存有複合氧化物Zn2Si04與ZnO之結果獲 而可製得除能進行良好的DC濺鍍之同時，尙| 折射率爲低且適合於太陽電池用透明膜之ZnO 膜。 又，由於該太陽電池用透明膜形成用濺鍍 密度，係理論密度的100至108%之故，除能進 之同時，尙可抑制靶的龜裂。 再者，由於該太陽電池用透明膜形成用濺 阻，係1 Ω · cm以下之故，能穩定進行良好的 又，由於本實施形態之太陽電池用透明膜 靶之製造方法，係將ai2o3粉末與Si〇2粉末劈 ，依上述的範圍進行混合以作成混合粉末之過 混合粉末在真空中使用熱壓機進行燒結之故， 良好的DC濺鍍，而可製作能進行低折射率透 之上述濺鍍靶。 再者’由於採用該濺鍍靶以進行DC濺鍍 射用透明膜，係依上述含有範圍含有ai2o3、S 餘部爲由ZnO以及不可避免之不純物所成之成 ’可獲得作爲將形成於薄膜太陽電池的透明電 反射用透明膜所需要之低折射率，如採用該膜 太陽電池而獲得高的轉換效率。 避免之不純 該燒結體的 ，藉由組織 得導電性， 交AZO膜之 -Si〇2'Al2〇3 靶的燒結體 行DC濺鍍 鑛靶的體電 DC濺鎪。 形成用濺鍍 ! ZnO粉末 程後，將此 能穩定進行 明膜之成膜 所得之防反 iO，並具有 分組成之故 極層上之防 ，則可作爲 -13- 201248903 【實施方式】 將就根據上述本實施形態實際所製作之太陽電池用透 明膜形成用濺鍍靶之實施例所評價之結果，加以說明如下 〇 本實施例之製造，係依下列條件所實施者。 首先，將Al2〇3粉末及Si02粉末及ZnO粉末，依表1 中所示之各比例加以稱fi後，將所得之粉末及其4倍量（ 重量比）的氧化錐球（將直徑5mm的球及直徑10mm的球各 一半）置入10公升的聚乙烯容器（聚乙烯製壺）中，使用球 磨機裝置進行濕式混合48小時，作成混合粉末。在此， 爲溶劑，則例如，採用乙醇。 其次，將所得之混合粉末乾燥後，過篩例如，篩孔： 2 5 Ομηι的篩子並造粒，再在真空乾燥後，在1 2〇〇 °c下5小 時’以200kgf/cm2的壓力，在真空中進行熱壓以作成燒結 體。 將經如此方式熱壓之燒結體，機械加工爲靶的指定形 狀（直徑125mm、厚度10mm)，並將經加工者黏合於由無 氧銅所成之背板以製作本實施例之濺鍍靶。 再者’作爲比較例1至1 1，將Al2〇3粉末及Si02粉 末及ZnO粉末依表丨所示之各比例稱量，並將所得之各粉 末混合’以0.6t(噸）/cm2加壓，再使用CIP(冷間等靜水壓 壓機）依175MPa(兆帕斯卡）進行成型，將此在14〇(rc下實 施大氣燒成以製作濺鍍靶。又，作爲比較例12至14，按 -14 - 201248903 本發明之成分組成的範圍外而依表1中所示之各比例稱量 ，按與本實施例同樣條件進行真空熱壓以製作濺鍍靶。 再者，將此等濺鍍靶裝附於磁控式濺鍍裝置（magnetron sputtering device)上，依電源：DC(直流）、施加電力： 200W(瓦特）、到達真空度：lxl(T4pa(帕）、濺鍍氣體：Ar( 氬）' 濺鍍壓力：〇_67Pa之條件，於經加熱爲200°C之玻璃 基板（康寧社 1737#縱：20x橫：20、厚度：0.7mm)上，嘗 試具有膜厚：300nm之透明膜之形成。 就如此所製作之本發明之實施例及比較例，分別測定： 燒結體的密度（理論密度比），藉由X射線繞射法（XRD)之 ZnO(lOl)及Zn2SiO4(410)的繞射峰値之有無、DC濺鏟之可否 、體電阻、60分鐘之DC濺鑛時的異常放電（extraordinary discharge)次數、經DC濺鍍之透明膜的折射率（對波長 3 8 0nm、5 5 0nm、7 5 0nm的光），並加以評價。將其結果表 示於表1中。 -15- 201248903When the Al2〇3 powder and the mixed powder of the Si〇2 powder and the ZnO powder are fired in the air or fired in a nitrogen atmosphere to form a sputtering target, SiO 2 and ZnO react to form a compound oxide. And the resistance rises to 1x1 〇 6 Ω / cm 2 or more and abnormal discharge occurs, so that the problem of DC sputtering cannot be performed. Further, when the content of SiO 2 is set to a small amount, a low-resistance sputtering target can be obtained by the above-described production method, but when it is formed by the sputtering target, it is not required as a transparent film for a solar cell. Low refractive index. As a result of the investigation by the inventors of the present invention, it has been found that when the composition of the composition is controlled to a predetermined range to perform hot pressing, a sputtering target having low resistance and good DC sputtering can be obtained. The fact that a low refractive index Zn0-SiO 2 -Al 203 film can be obtained when the sputtering target is used for sputtering film formation. Therefore, in the present invention, in order to solve the above problems, the present invention has adopted the following configuration. That is, the sputtering target of the present invention has an A1 content of 0.3 to 4.0 wt%, Si: 6.0 to 14.5 wt%, and a balance of Zn and unavoidable impurities. The oxide sintered body having a compositional composition is characterized in that a composite oxide of Zn2Si04 and ZnO is present in the structure of the sintered body. Since such a sputtering target for forming a transparent film for a solar cell has a total metal content of A1: 0.3 to 4.0 wt%, Si: 6.0 to 14.5 wt%, and the balance is Zn and unavoidable impurities. The oxide sintered body composed of the constituent components is formed, and the composite oxides Zn2Si04 and ZnO are present in the structure of the sintered body, and the composite oxide Zn2Si04 and ZnO coexist in the structure to obtain conductivity, and can be carried out. Good 201248903 DC sputtering, 尙 can produce a Zn0-SiO2-Al203 film which is lower in refractive index than AZO film and suitable for transparent film for solar cells. Here, the reason why the content of the above A1 is made 0.3 to 4.0 wt%/〇 is, for example, when it is 0.3 wt% or less, abnormal discharge occurs because sufficient conductivity cannot be obtained, so that DC sputtering cannot be performed. When the content is 4.0% by weight or more, the abnormal discharge of the composite oxide ZnAl204 due to the generated Al2〇3 and ZnO will occur, so that DC sputtering cannot be performed. In addition, when the content of Si is 6.0 to 14.5% by weight, if it is 6.8 wt% or less, abnormal discharge occurs due to the inability to obtain a sufficient effect of lowering the refractive index, so that DC sputtering cannot be performed. When the amount is 14.5 wt% or more, abnormal discharge occurs due to insufficient conductivity, so that DC sputtering cannot be performed. Further, the sputtering target for forming a transparent film for a solar cell of the present invention is characterized by: The density of the sintered body is from 100 to 108% in terms of a theoretical density ratio. Since the sputtering target for forming a transparent film for a solar cell has a density of 100 to 108% of the theoretical density, the DC sputtering furnace can be used, and the target crack can be suppressed. In other words, when the density of the sintered body is 100 to 108% in terms of the theoretical density ratio, if it is 100% or less, problems such as target cracking may occur, for example, at 1 〇 8 % or more. At this time, since all of the ruthenium will become a structure of the composite oxide Zn2Si04, discharge by DC sputtering cannot be performed. -8- 201248903 Here, for the calculation of the theoretical density, calculation is performed using ZnO: 5.61 g/cm 3 , SiO 2 : 2·20 g/cm 3 , and Al 2 〇 3 : 3.99 g/cm 3 . Further, the sputtering target for forming a transparent film for a solar cell of the present invention is characterized by a bulk resistance of 1 Ω·cm or less. In other words, since the sputtering target for forming a transparent film for a solar cell has a system resistance of 1 Ω·cm or less, good DC sputtering can be stably performed. A method for producing a sputtering target for forming a transparent film for a solar cell according to the present invention is the method for producing the sputtering target for forming a transparent film for a solar cell, comprising: comprising Al2〇3 powder, SiO2 powder and ZnO powder , a process of mixing into a mixed powder by Al2〇3: 0.5 to 5.0 wt%, SiO 2 : 10 to 22 wt%, residual ZnO, and unavoidable impurities, and the above mixed powder in a vacuum A hot press is used to carry out the sintering process. In the method for producing a sputtering target for forming a transparent film for a solar cell, the mixed powder is used in a vacuum after the ai2o3 powder and the SiO2 powder and the ZnO powder are mixed in the above range to form a mixed powder. The hot press can perform good DC sputtering stably by sintering, and can produce sputtering which can form a film of a low refractive index transparent film. [Effects of the Invention] According to the present invention, the following effects can be exhibited. That is, if the sputtering target for forming a transparent film for a solar cell according to the present invention is used, it has a total organic component content of: A1: 0.3 to -9 - 201248903 4.0 wt%, Si: 6.0 to 14.5 wt%. The remainder is made of an oxide sintered body composed of Zn and an unavoidable impurity, and the composite oxides Zn2Si04 and ZnO are present in the structure of the sintered body, so that a good de-energization can be obtained. At the same time as the DC sputtering, the ytterbium has a lower refractive index than the AZO film and is suitable for the Zn0-SiO2-Al203 film of the transparent film for solar cells. According to the method for producing a sputtering target of the present invention, the mixed powder of Al2〇3 powder and SiO2 powder and ZnO powder is mixed in the above range, and after sintering in a vacuum using a hot press, the above-mentioned splash can be produced. Therefore, the antireflection formed on the AZO film (transparent electrode layer) as a thin film solar cell can be obtained by using a transparent film for a solar cell formed by sputtering using the sputtering target of the present invention by DC sputtering. The low refractive index required for the transparent film is used, and a thin film solar cell having good conversion efficiency can be produced at low cost. [Best K embodiment of the invention] Hereinafter, a sputtering target for forming a transparent film for a solar cell according to the present invention and a method for producing the same will be described below with reference to Figs. 1 and 2 . The sputtering target for forming a transparent film for a solar cell according to the present embodiment contains: A1: 0.3 to 4.0 wt%, Si: 6.0 to 14.5 wt%, the balance being Zn, and unavoidable impurities. The oxide sintered body having the composition of the composition is formed, and a target of the composite oxides Zn2Si04 and ZnO is present in the structure of the sintered body. -10- 201248903 Further, the sputtering target is a sintered body having a density of 100 to 108% of the theoretical density. In addition, the method of producing a sputtering target for forming a transparent film for a solar cell of the present embodiment, wherein the sputtering target has a system resistance of less than or equal to IQ cin, comprises: containing Ah 3 powder, SiO 2 powder, and ZnO powder; a process of mixing into a mixed powder by means of Al2〇3: 〇.5 to 5_0wt%, S丨02: 10 to 22wt%, remainder: ZnO, and unavoidable impurities, and mixing the aforementioned powder A hot press is used in the vacuum to carry out the sintering process. When the details of the above-mentioned production method are described in detail, for example, in the first embodiment, the Al2〇3 powder and the Si〇2 powder and the ZnO powder are first weighed so as to be in the above-described content range, and the wet type is used. The ball mill is pulverized and mixed to prepare a mixed powder. For example, each of the weighed powder and the chrome oxide ball is placed in a polyethylene container (polyethylene pot), and wet-mixed for a predetermined time using a ball mill apparatus to prepare a mixed powder. Here, as the solvent, for example, ethanol is used. · Nextly, after drying the obtained mixed powder, it is sieved, for example, sieved: 250 μm sieve and granulated, and then dried under vacuum, for example, at 2 Torr (rCT 5 hours, at 200 kgf (kg gram) / Cm 2 The pressure is hot pressed in a vacuum to form a sintered body. Here, the hot pressing temperature is preferably in the range of 11 Torr to 1250 C. The pressure is preferably in the range of 150 to 350 kgf/cm 2 . The sintered body is usually machined into a specified shape of tantalum by electric discharge machining, cutting or grinding techniques, and the processed tantalum is indium (indium) as a flux 'and bonded to Cu (copper) or SUS (stainless) -11 - 201248903 steel) or other metal (such as 'Mo (molybdenum)) made of backing plate for sputtering. Here, other manufacturing methods can also be used for the above manufacturing The wet ball mill used in the method is pulverized and mixed, and pure water is used as a solvent and replaced with a 300 L (liter) ball mill device. Then, the granulator is dried by spray drying, and then shredded by a dry ball mill. And the shredded powder A method of performing hot pressing in the same manner as described above, or a shredding process in which the above-described dry ball mill is omitted. The transparent film for solar cells subjected to DC sputtering using the sputtering target of the present embodiment has a Αΐ2〇3: 〇·5 to 5.0wt%, Si〇2: 10 to 22wt%, and the remainder is composed of ZnO and unavoidable impurities. The thin film solar cell using the transparent film for solar cells, For example, as shown in Fig. 2, it is sequentially laminated on a soda lime glass board: a Mo (molybdenum) rear-surface electrode 2, a CIGS (copper indium gallium selenide) absorption layer 3 a buffer layer 4 of ZnO (zinc oxide), ZnS (zinc sulfide), ZnOH (zinc hydroxide), CdS (cadmium sulfide), etc. belonging to the n-type semiconductor layer, and i (different) belonging to the high resistance layer The ZnO buffer layer 5, the AZO electrode 6, which belongs to the upper transparent electrode layer, the anti-reflection films 7a and 7b, and the surface electrode 8, wherein the anti-reflection film 7b and the AZO electrode 6 belonging to the MgF2 (magnesium fluoride) film are formed. The anti-reflection film 7a between the two is used for the solar cell In the sputtering target for forming a transparent film for a solar cell according to the present embodiment, the amount of the component contained in the total amount of the gold-containing component is A1: 0.3 to 4.0 wt% -12 - 201248903 'Si: 6.0 to 14.5 wt% The remainder is made of an oxide sintered body composed of Zn and a component which is not formed, and the composite oxides Zn2Si04 and ZnO are present in the structure, and the composite oxides Zn2Si04 and ZnO are coexistent. In addition to being able to perform good DC sputtering, 尙| has a low refractive index and is suitable for a ZnO film for a transparent film for solar cells. Further, since the sputtering density for forming a transparent film for a solar cell is 100 to 108% of the theoretical density, the target can suppress cracking of the target. In addition, since the sputtering method for forming a transparent film for a solar cell is 1 Ω·cm or less, it is stable and stable, and the method for producing a transparent film target for a solar cell according to the present embodiment is ai2o3 powder. The Si〇2 powder crucible is mixed with the above-mentioned range to form a mixed powder, and the super-mixed powder is sintered in a vacuum using a hot press, and good DC sputtering can be used to produce a low refractive index permeation. Sputter target. In addition, the use of the sputtering target to perform a DC sputtering sputtering transparent film is based on the above-mentioned range containing ai2o3, and the remainder of S is formed of ZnO and unavoidable impurities. The low refractive index required for the transparent film for transparent electroreflection of the battery, such as the use of the film solar cell, achieves high conversion efficiency. To avoid the impureness of the sintered body, by the electrical conductivity of the structure, the sintered body of the -Si〇2'Al2〇3 target of the AZO film is subjected to DC sputtering of the DC sputtering target. After the ZnO powder process is formed, the anti-reflection iO obtained by the film formation of the bright film can be stably stabilized, and the anti-iO layer having the composition of the composition can be used as the prevention of the electrode layer, and it can be used as the -13-201248903. The results of the evaluation of the examples of the sputtering target for forming a transparent film for a solar cell produced in the above-described embodiment are as follows. The production of the present embodiment is carried out under the following conditions. First, the Al2〇3 powder, the SiO2 powder and the ZnO powder are weighed according to the respective ratios shown in Table 1, and the obtained powder and its 4 times (weight ratio) oxidized cone (with a diameter of 5 mm) Each of the balls and the balls having a diameter of 10 mm was placed in a 10 liter polyethylene container (polyethylene pot), and wet-mixed for 48 hours using a ball mill apparatus to prepare a mixed powder. Here, as the solvent, for example, ethanol is used. Next, after the obtained mixed powder is dried, it is sieved, for example, through a sieve of 2 5 Ομηι and granulated, and after vacuum drying, at a pressure of 200 kgf/cm 2 at 1 2 ° C for 5 hours. Hot pressing is performed in a vacuum to form a sintered body. The sintered body which was hot pressed in this manner was machined into a specified shape of the target (diameter: 125 mm, thickness: 10 mm), and the processed person was bonded to a back sheet made of oxygen-free copper to prepare a sputtering target of the present embodiment. . Further, as Comparative Examples 1 to 1, the Al 2 〇 3 powder, the SiO 2 powder and the ZnO powder were weighed according to the respective ratios shown in Table ,, and the obtained powders were mixed 'to 0.6 t (ton) / cm 2 The pressure was further molded by using a CIP (cold isostatic hydrostatic press) at 175 MPa (megapascals), and this was subjected to atmospheric firing at 14 Torr (rc) to prepare a sputtering target. Further, as Comparative Examples 12 to 14 According to the range of the composition of the present invention, the ratios of the components of the present invention are weighed and the respective ratios shown in Table 1 are weighed, and vacuum hot pressing is carried out under the same conditions as in the present embodiment to prepare a sputtering target. The sputtering target is attached to the magnetron sputtering device according to the power supply: DC (DC), applied power: 200W (watt), reaching the vacuum: lxl (T4pa (pa), sputtering gas: Ar (argon)' sputtering pressure: 〇_67Pa, on a glass substrate heated to 200 ° C (Corning 1737 # vertical: 20x horizontal: 20, thickness: 0.7mm), try to have a film thickness: 300nm The formation of the transparent film. The examples and comparative examples of the present invention thus produced were respectively measured: the density of the sintered body Degree (theoretical density ratio), the diffraction peak of ZnO (lOl) and Zn2SiO4 (410) by X-ray diffraction (XRD), the presence or absence of DC spatter, body resistance, 60 minutes of DC sputtering The number of extraordinary discharges at the time, the refractive index of the transparent film by DC sputtering (light of wavelengths of 380 nm, 550 nm, and 750 nm) were evaluated and the results are shown in Table 1. -15- 201248903

【SJ 折射率 750 nm 1 1 U7 1.74 1M 1 1 1.73 1 1 I U2 1 I 5 CO (Ο 1.63 I 1.62 P 1.63 1.65 ΰ 550 nm 1 1 1.Θ5 1M «a 1 1 1.83 1 1 I 1.$3 1 I <〇 s <s «η $ <〇 1.54 Ε i cn 1 1 2.15 Ν 2.07 1 1 1.98 1 1 I s •m： 1 I ir> a> to s ε 1.66 卜· (0 U> 異常放 電次數 (6吩鐘） 1380 變 严 rg ΙΩ 89t 1470 2042 1 1 I o 1 762 04 - ο 严 o η 電阻値 (Ω _cnr〇 4.6X10"* 1.8 X10'3 2.3X10'5 6ΛΧ10*4 7*2X10— 8.6 X10-4 9.1 ΧΙΟ"4 8.8X10"* OV.RG OV.RG OV.RG voxuT3 丨 OV.RG 6.9 x I O'3 1.5X10_, xi O'5 3^x10 3 4.8 X10"3 52X10^ 9.1 xIO"3 9.3 XIO'3 3.3^10^ DC可否 1? t? 1? 1? 1? t? 不可1 1不可I i不可| t? 不可 t? 1? t? tH1 I? t? XRD峰値 Zn,Si〇4 (410) 摧 雔 摧 摧 摧 壊 w 擗 耻 up 2nO (ton 聛 W- w 揲 裢 戡 聛 m 耻 擗 理論. 密度比 σ> a Ο) I 9> σ> ίΛ β> aft 〇> η ο 〇 s η ο S O o Ϊ Ο 姿 o g o % ο 〇 ο s o 〇 理論 密度 g/cm3 S in w ΙΟ 5.59 | 5.54 J ΙΑ ΙΟ 5.43 5.39 6.15 4.81 4.52 4爻6 5.15 1 s in 454 4.15 4£4 4.17 4^8 Ml 製法 燒成 燒成 燒成 燒成 燒成 燒成 燒成 燒成 燒成 燒成 燒成 % ϊ a. X 1 X ϊ 僅靶金屬成分之重量％ •5 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 I餘部I 餘部 m 錐 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 (7) ο 〇 〇 〇 〇 〇 ο 〇 5 G〇 〇 A 12.79 14.98 12.99 寸 5 12^4 14·26 g <£> 14.15 12.72 12.94 < 0.07 0.13 0.66 CM 3.35 5.42 6.82 2.04 2·08 1-½ 1.Λ5 2.04 j 4.41 S 2.13 2.18 CsJ 0.69 0.73 0.36 3.66 原料混合組成 ZnO 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 I餘部I l餘部I 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 餘部 o ΪΛ I 1 1 1 1 1 I 5wt% 10wt% I 15w% 20wt% 5wt% 23wt% 20vwtt 10wt% 15wt% i I 10wt\ 22wtX 20wt% 20wt% ai2o3 O.lwt% 0.2wrt Iwtt 1 Qwt% 10wtX 3wtt 3wtt 2wtt 2wt% 3wrt I 6wt% 1 3w« 3wt% i iw« \wt% 0.5wtX I «Μ co 寸 \〇 卜 00 9> o 二 — CO \n c〇 卜 00 比較例 實施例 -16- 201248903 由此結果可知，採用大氣燒成之比較例之中，在 Al2〇3的含量少而不含Si〇2之比較例1、2，貝IJ異常放電次 數多以致不能實施穩定的DC濺鍍、在雖然有某程度之 Ah〇3的含量惟不含Si02之比較例3至5，貝IJ未倉g獲得低 折射率。又，採用大氣燒成之比較例之中，A1203的含量 多而不含Si02之比較例6、7，則異常放電次數多以致不 能實施穩定的DC濺鍍，在含有A1203及Si02之比較例8 至11，則異常放電次數多或靶不具有導電性以致不能實施 DC濺鍍。在此，比較例1至7中，密度均在理論密度之 1 0 0 %以下者。 再者，採用熱壓機之比較例之中，Si02的含量較本發 明之範圍爲少的比較例1 2中，則未能獲得低的折射率而 Si 〇2的含量較本發明之範圍爲多之比較例13中，則靶不 具有導電性以致未能實施DC濺鍍。又，Al2〇3的含量較 本發明之範圍爲多之比較例1 4中，則異常放電次數多以 致未能實施穩定的DC濺鍍。再者，在比較例8，12，14 ，則雖於XRD時觀察有ZnO(lOl)及Zn2Si〇4(410)的兩峰 値，然而由於A1或Si的含量係本發明之範圍外之故，發 生有上述之缺點。 相對於此，本實施例中，均於XRD觀察有ZnO(lOl) 及Zn2SiO4(410)的兩峰値，因異常放電次數非常少之故能 穩定實施有良好的DC濺鍍、就折射率而言，亦均獲得有 較AZO膜爲低的折射率。又，就密度而言，於本實施例 中，均在理論密度的1〇〇至108 %之範圍內。 -17- 201248903 其次，就表1中所示實施例3(Si02 : 20wt%)，將藉由 X射線繞射（XRD)所觀察之結果，表示於第3圖中。在此 施例3中，均以高的強度觀察有複合氧化物Zn2Si04的 (410)的繞射峰値及ΖηΟ的（101)的繞射峰値。相對於此， 經按與ΪΪ施例3同樣成分組成但依大氣燒成所製作之比較 例中，則如第4圖所示，未能獲得ΖηΟ的（1 01)的繞射峰 値。因而，如欲獲得導電性時，則如本實施例般，需要在 組織中共存複合氧化物Zn2Si04及ΖηΟ之情況。 再者，本發明之技術範圍並不因上述實施形態及上述 贲施例而有所限定，可於不脫離本發明之要旨之範圍內加 以種種變更。 【圖式簡單說明】 [第1圖]於有關本發明之太陽電池用透明膜形成用濺 鍍靶及其製造方法之實施形態中，表示濺鍍靶之製造過程 之'流程圖。 [第2圖]表示經採用本實施形態之太陽電池用透明膜 之薄膜太陽電池之槪略剖面圖。 [第3圖]於有關本發明之太陽電池用透明膜形成用濺 鍍靶及其製造方法之實施例中，表示濺鍍靶之X射線繞射 (XRD)的分析結果之圖。 [第4圖]於有關本發明之太陽電池用透明膜形成用濺 鍍靶及其製造方法之比較例（大氣燒成）中，表示濺鍍靶的 X射線繞射（XRD)的分析結果之圖。 -18- 201248903 【主要元件符號說明】 1 :鹼石灰玻璃基板 2 : Mo後面電極 3 : CIG S吸收層 4 :緩衝層 5 : i-ZnO緩衝層 6 : AZO電極 7a :防反射膜（太陽電池用透明膜） 7b :防反射膜（MgF2膜） 8 :表面電極 -19-[SJ refractive index 750 nm 1 1 U7 1.74 1M 1 1 1.73 1 1 I U2 1 I 5 CO (Ο 1.63 I 1.62 P 1.63 1.65 ΰ 550 nm 1 1 1.Θ5 1M «a 1 1 1.83 1 1 I 1.$3 1 I <〇s <s «η $ <〇1.54 Ε i cn 1 1 2.15 Ν 2.07 1 1 1.98 1 1 I s •m: 1 I ir>a> to s ε 1.66 卜· (0 U> Abnormal discharge times (6 knives) 1380 Strictness rg ΙΩ 89t 1470 2042 1 1 I o 1 762 04 - ο 严 o η Resistance 値 (Ω _cnr〇4.6X10"* 1.8 X10'3 2.3X10'5 6ΛΧ10*4 7 *2X10— 8.6 X10-4 9.1 ΧΙΟ"4 8.8X10"* OV.RG OV.RG OV.RG voxuT3 丨OV.RG 6.9 x I O'3 1.5X10_, xi O'5 3^x10 3 4.8 X10"3 52X10^ 9.1 xIO"3 9.3 XIO'3 3.3^10^ DC Can 1? t? 1? 1? 1? t? Not 1 1 Not I i not | t? Not t? 1? t? tH1 I? t? XRD peak 値Zn, Si〇4 (410) Destroy and destroy 壊 w 擗 up up 2nO (ton 聛W- w 揲裢戡聛m shame theory. Density ratio σ> a Ο) I 9>σ> Λ &> aft 〇> η ο 〇s η ο SO o Ϊ Ο posture ogo % ο 〇ο so 〇 theoretical density g/cm3 S In w ΙΟ 5.59 | 5.54 J ΙΑ ΙΟ 5.43 5.39 6.15 4.81 4.52 4爻6 5.15 1 s in 454 4.15 4£4 4.17 4^8 Ml Process firing, firing, firing, firing, baking, firing, firing Firing and firing % ϊ a. X 1 X ϊ Only the weight of the target metal component % • 5 remainder of the remainder of the surplus, the remainder of the surplus, the remainder of the surplus, the remainder of the remainder, the remainder of the surplus, the remainder of the surplus, and the remainder of the remainder (7) 〇〇〇〇〇ο 〇5 G〇〇A 12.79 14.98 12.99 inch 5 12^4 14·26 g <£> 14.15 12.72 12.94 < 0.07 0.13 0.66 CM 3.35 5.42 6.82 2.04 2·08 1-1⁄2 1. Λ 2.0 2.0 2.0 2.0 2.0 2.0 1 1 I 5wt% 10wt% I 15w% 20wt% 5wt% 23wt% 20vwtt 10wt% 15wt% i I 10wt\ 22wtX 20wt% 20wt% ai2o3 O.lwt% 0.2wrt Iwtt 1 Qwt% 10wtX 3wtt 3wtt 2wtt 2wt% 3wrt I 6wt% 1 3w« 3wt% i iw« \wt% 0.5wtX I «Μ co 寸 \ 〇 00 9> o II - CO \nc〇 00 Comparative Example 16 - 201248903 From this result, it can be seen that in the comparative example of atmospheric firing In Comparative Examples 1 and 2 in which the content of Al2〇3 was small and Si〇2 was not contained, the number of abnormal discharges of the shell IJ was so large that stable DC sputtering could not be performed, and although there was a certain degree of Ah〇3, it was not included. In Comparative Examples 3 to 5 of Si02, the shell IJ did not have a low refractive index. Further, in the comparative example in which the air was fired, in Comparative Examples 6 and 7 in which the content of A1203 was large and SiO2 was not contained, the number of abnormal discharges was large, so that stable DC sputtering could not be performed, and Comparative Example 8 containing A1203 and SiO2 was used. To 11, the number of abnormal discharges is large or the target is not electrically conductive so that DC sputtering cannot be performed. Here, in Comparative Examples 1 to 7, the density was all below 100% of the theoretical density. Further, in Comparative Example using a hot press, in Comparative Example 1 2 in which the content of SiO 2 was smaller than the range of the present invention, a low refractive index was not obtained, and the content of Si 〇 2 was in the range of the present invention. In Comparative Example 13, the target was not electrically conductive so that DC sputtering could not be performed. Further, in Comparative Example 14 in which the content of Al2〇3 was larger than the range of the present invention, the number of abnormal discharges was large, so that stable DC sputtering could not be performed. Further, in Comparative Examples 8, 12, and 14, the two peaks of ZnO (101) and Zn2Si〇4 (410) were observed at the time of XRD, but since the content of A1 or Si was outside the range of the present invention, The above disadvantages occur. On the other hand, in the present example, both peaks of ZnO (101) and Zn2SiO4 (410) were observed by XRD, and since the number of abnormal discharges was very small, stable DC sputtering and refractive index were stably performed. In other words, the refractive index is lower than that of the AZO film. Further, in terms of density, in the present embodiment, they are all in the range of 1 〇〇 to 108% of the theoretical density. -17-201248903 Next, with respect to Example 3 (SiO 2 : 20 wt%) shown in Table 1, the results observed by X-ray diffraction (XRD) are shown in Fig. 3. In this Example 3, the diffraction peak of (410) of the composite oxide Zn2Si04 and the diffraction peak of (101) of ΖηΟ were observed with high strength. On the other hand, in the comparative example produced by the same composition as that of the third embodiment but fired by the atmosphere, as shown in Fig. 4, the diffraction peak of (1 01) of ΖηΟ was not obtained. Therefore, when conductivity is desired, as in the present embodiment, it is necessary to coexist the composite oxides Zn2Si04 and ΖηΟ in the structure. In addition, the technical scope of the present invention is not limited by the above-described embodiments and the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. [Brief Description of the Drawings] [Fig. 1] A flow chart showing a manufacturing process of a sputtering target in an embodiment of a sputtering target for forming a transparent film for a solar cell according to the present invention and a method for producing the same. [Fig. 2] is a schematic cross-sectional view showing a thin film solar cell using the transparent film for a solar cell of the present embodiment. [Fig. 3] Fig. 3 is a view showing an analysis result of X-ray diffraction (XRD) of a sputtering target in an embodiment of a sputtering target for forming a transparent film for a solar cell according to the present invention and a method for producing the same. [Fig. 4] A comparative example (atmospheric firing) of a sputtering target for forming a transparent film for a solar cell according to the present invention, and an analysis result of X-ray diffraction (XRD) of a sputtering target Figure. -18- 201248903 [Description of main components] 1 : Soda lime glass substrate 2 : Mo back electrode 3 : CIG S absorbing layer 4 : Buffer layer 5 : i-ZnO buffer layer 6 : AZO electrode 7a : Anti-reflection film (solar battery Transparent film) 7b: Anti-reflection film (MgF2 film) 8 : Surface electrode-19-

Claims (1)

201248903 七、申請專利範圍： 1. 一種太陽電池用透明膜形成用濺鍍靶，其特徵爲： 由具有對全金屬成分量含有A1: 0.3至4.Owt%、Si : 6.0 至14.5wt%、餘部爲由Zn以及不可避免之不純物所成之 成分組成之氧化物燒結體所成者， 該燒結體的組織中存在有複合氧化物Zn2Si04及ZnO 〇 2. 如申請專利範圍第1項之太陽電池用透明膜形成用 濺鍍靶，其中， 該燒結體的密度，係以理論密度比計，爲1 00至 10 8%° 3 .如申請專利範圍第1項之太陽電池用透明膜形成用 濺鑛靶，其中， 體電阻，爲1Ω· cm以下》 4· 一種太陽電池用透明膜形成用濺鍍靶之製造方法， 係製作如申請專利範圍第1項之太陽電池用透明膜形成用 濺鍍靶之方法，其特徵爲： 包含有：將Ah〇3粉末與Si〇2粉末與Zn0粉末，按 由 Al2〇3 : 0.5 至 5.0wt°/〇、Si02 : 10 至 22wt%、餘部： ZnO以及不可避免之不純物所成之方式混合作成混合粉末 之步驟、及 將前述混合粉末在真空中使用熱壓機以進行燒結之步 驟。 -20-201248903 VII. Patent application scope: 1. A sputtering target for forming a transparent film for a solar cell, characterized in that it has an A1: 0.3 to 4.0 wt%, Si: 6.0 to 14.5 wt%, and has an amount of all metal components. The remainder is an oxide sintered body composed of a composition of Zn and an unavoidable impurity, and the composite oxide Zn2Si04 and ZnO 〇2 are present in the structure of the sintered body. The solar cell of claim 1 The sputtering target is formed by a transparent film, wherein the density of the sintered body is from 100 to 10 8% ° 3 in terms of a theoretical density ratio. The transparent film for solar cell formation is coated as in the first application of the patent scope. In the ore target, the bulk resistance is 1 Ω·cm or less. 4. A method for producing a sputtering target for forming a transparent film for a solar cell, which is a sputtering method for forming a transparent film for a solar cell according to the first application of the patent application. The method of the target is characterized in that: the powder comprising Ah 〇 3 and Si 〇 2 powder and Zn 0 powder, according to Al 2 〇 3 : 0.5 to 5.0 wt ° / Si, SiO 2 : 10 to 22 wt%, the balance: ZnO and Inevitable impure The step of mixing and mixing the powder, and the step of sintering the mixed powder in a vacuum using a hot press. -20-
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