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TW201247056A - Wiring method for surface of solid structure, intermediate structure for obtaining solid structure having surface provided with wiring, and solid structure having surface provided with wiring - Google Patents

Wiring method for surface of solid structure, intermediate structure for obtaining solid structure having surface provided with wiring, and solid structure having surface provided with wiring Download PDF

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Publication number
TW201247056A
TW201247056A TW100140115A TW100140115A TW201247056A TW 201247056 A TW201247056 A TW 201247056A TW 100140115 A TW100140115 A TW 100140115A TW 100140115 A TW100140115 A TW 100140115A TW 201247056 A TW201247056 A TW 201247056A
Authority
TW
Taiwan
Prior art keywords
insulating
wiring
convex body
laser
forming
Prior art date
Application number
TW100140115A
Other languages
Chinese (zh)
Inventor
Hiromitsu Takashita
Tsuyoshi Takeda
Yuko Konno
Hiroaki Fujiwara
Shingo Yoshioka
Original Assignee
Panasonic Corp
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Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of TW201247056A publication Critical patent/TW201247056A/en

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Classifications

    • H10W74/114
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • H10W90/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/119Details of rigid insulating substrates therefor, e.g. three-dimensional details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09845Stepped hole, via, edge, bump or conductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H10W70/093
    • H10W70/60
    • H10W70/654
    • H10W70/655
    • H10W72/01
    • H10W72/834
    • H10W74/40
    • H10W90/22
    • H10W90/26
    • H10W90/28

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Structure Of Printed Boards (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention is directed to providing a wiring method for the surface of a solid structure, an intermediate structure for obtaining a solid structure having a surface provided with wiring, and a solid structure having a surface provided with wiring, wherein a laser can irradiate along only one direction with the arranged position or direction of a laser irradiation device or a stage being unchanged, whereby a circuit pattern is well formed in the solid structure. In the invention, a convex body 13a is formed on the surface of an insulated substrate 11 by using an insulated resin 13. A resin film 14 is formed on the surface of the convex body 13a and the surface of the insulated substrate 11. A circuit pattern 15 having a depth greater than that of the resin film 14 is formed by performing a laser processing from the outer surface side. A plating catalyst 16 is coated on the surface of the circuit pattern 15 and the surface of the resin film 14. The resin film 14 is removed, and an electroless plating film 17 is only formed on the residual portion of the plating catalyst 16. In the step (B) of forming a convex body, a convex body 13a, having an inclined plane 13b inclining relatively to the surface of the insulated substrate 11, is formed. In the step (D) of forming a circuit pattern, a laser irradiates toward the surface of the insulated substrate 11 along a vertical direction.

Description

201247056 六、發明說明: 【發明所屬之技術領域】 [0001] 之配線方法、用以獲得表 、及表面設有配線之立體201247056 VI. Description of the Invention: [Technical Field of the Invention] [0001] Wiring method, for obtaining a watch, and a three-dimensional wiring having a surface

本發明係關於對立體構造物的表面 面設有配線之立體構造物的中間構造物 構造物。 D 【先前技術】 [0002] 近^來,伴隨著電氣、電子領域中電路之高密度化,配線寬 ^細線化或配線間隔窄化正在進展中。細,配線_愈狹窄, 在鄰接之配線間愈易引起短路或遷移。 〜 [0003] 造方此ΐΐϊΐΐ,專利文獻1中記載有如下之電路製 ^方法。首先’在纟G緣基材表面形成樹脂H欠,自樹脂膜外 或孔以形成電路圖案。其次,令電鍍 、,緣紐之電關絲Φ及被舰絲狀翻旨縣面。立次, 樹Ϊ膜。其次,藉由對經剝離樹脂膜之絕緣基材 =丁無?; 於電路圖案形成電鍍。依此技術,可藉由雷 射加工綠度轉電路_之輪廓,抑輸 [0004] ^ 且專彳】文獻2巾’作為在電路基彳减半導體封裝等立體構造 物表面形成配線之技術,揭示有如下之 ΪΓ其次,藉由自絕緣樹脂外表面侧及絕緣 3外ΐίϊίϊ 形成深度在樹脂膜厚度分以上之配線 ,槽。其_人’ 5電鑛觸媒或其前驅物包覆配線溝槽表面。 轉其去除之。其次,僅於去除樹脂膜後 由電鑛觸媒I』驅物形紅電綱媒前之雜軸無電解電 201247056 鍍膜。 [先前技術文獻] [專利文獻] [0005] [專利文獻1]日本特開2010-80946號公報(段落〇〇1 [專利文獻2]賺公開獨2_〇87336號 ) 落0126〜013卜圖12、圖15〜19) W又洛U100 &amp; 【發明内容】 [0006] 專利文獻2所記載之立麵造物巾,紅崎娜被覆 於絕緣基材之半導體晶狀階段,藉由_翻旨形成上表 於絕緣基材表面且側面垂直於絕緣基材表面之凸狀體。藉由 加工在此凸狀體上表面或絕緣基材表面形成配線溝槽時,一车 自外表面側沿垂直於凸狀體上表面或絕緣基材表面之方向昭 射:藉此’雷射良好地沖擊凸狀體上表面或絕緣基材表面, 地形成配線溝槽。 [0007] 然而,於凸狀體侧面形成配線溝槽時,為使雷射良好地 凸狀體側面,需變更雷射照射裝置之配置位置或方向,或 置立體構造_工作件)之平台之配置位置或方向。如此之作業 費時間而招致生產力之降低。料使如此之敎成為可能而^改 造雷射照射裝置或平台時亦會招致生產成本之提升。 [0008] 、本發明=目的在於提供一種對立體構造物的表面之配線方 ,、用以獲得表面設有配線之立體構造物的中間構造物、及表面 設有配線之立體構造物,在具有凸狀體之立體構造物表面形成配 線時’可*變更f射照雜置或平台之配置位置或方向,僅沿一 方向照射f射’藉此於凸狀體良好地電路圖案。 [0009] 201247056 亦即,本發明係一種對立體構造物的表面之配 凸狀體形成步驟,於絕缓其丄 &quot; 去,包含: 樹脂膜形成步驟,於2,由絕緣樹脂形成凸狀體; 電路圖案形成步驟,#由體自表外面緣基材表面形成樹月旨膜; 電鍍觸媒包覆步驟’令雷 面及樹蘭絲; 麵㈣·前驅物包㈣路圖案表 =膜去除步驟,去;及 觸媒的殘==無職由其細_彡成之電鍍 之傾步驟,“具有相對於絕緣基材表面傾斜 射。於該電路_形成步驟,她緣紐表面沿垂直方向照射雷 [0010] JL本發明之另一離揭总 造物的中間構造物,包含:'、翻以獲得表面設有配線之立體構 絕緣基材;及 凸狀體’於絕緣基材表面藉 且該凸狀體具有相對於成, [00Π] 、、吧、,彖基材表面傾斜之傾斜面。 且本發明之又一態樣 法,包含: 〜像係種對立體構造物的表面之配線方 絕緣樹脂層形成步驟, 含凸狀體之絕緣樹脂層;%、、、巴緣基材表面猎由絕緣樹脂形成包 樹脂膜形成步驟,於絕绫椒 電路圖案形成步驟,夢^曰^表面形成樹脂膜; 度超過樹脂膜厚度,呈所自外表_進行雷射加工,形成深 電路圖案; 主之形狀及深度之溝槽及/或孔,形成 201247056 面及覆步驟,令電鑛觸媒或其前驅物包覆電路圖案表 樹脂膜去除步驟,去除樹脂膜;及 觸媒==無?=媒或由其前驅物所形成之電鍍 表面====^_於絕緣基材 射。於該電關_齡驟,誠緣紐表面料直方向照射雷 [0012] 造物係—細獲得表面設有配線之立體構 絕緣基材;及 狀體絕緣樹脂層,包含於絕緣基材表面藉由絕緣樹脂所形成之凸 _^該凸狀體具有相對於絕緣基材表面傾斜之傾斜面。 法,g發日狀其簡祕—㈣立賴造㈣表面之配線方 ======凸狀體; 難厚度’呈所希望之形狀及深度^ 面及胸,馈峨騎爾㈣路圖案表 樹脂膜去除步驟,去除樹脂膜;及 觸媒無=媒或由其前驅物所形成之電鑛 且於該凸《形成步驟,戦具有相私絕絲材表面傾斜 201247056 之傾斜面之凸狀體, 朝絕緣基材表面沿垂直方向照射雷 於該電路圖案形成步」 射,且朝凸狀體傾斜面照射堂二二琢签何衣囟沿垂直方向照射雷 面的面照射雷射時,使备,相較於朝平行於絕緣基材表 [〇〇14] 早位時間的雷射之能量增大。 法,^發明之另―錄係—種對立體構造物的表面之配線方 系巴緣柄·脂層形成步驟,於 含凸狀體之絕緣樹脂層;於、、、邑緣基材表面猎由絕緣樹脂形成包 驟於》表面形成樹脂膜; 賴厚度,呈所孔形= 面及樹步驟’令電_媒或其前驅物包覆電路圖案表 樹脂臈去除步驟,去除樹脂膜;及 娜=====軸編騎形成之電鐘 絕緣細旨層形成步驟,形成包含具有姉於絕缘Α材 表面傾斜之傾斜面之凸狀體之絕緣翻層, 則緣基材 =電路圖案形成步驟,朝絕緣基&amp;表面沿垂直方向 而·朝凸狀體傾斜面照射#射時,相較於朝平行於輯基材ΐ [〇〇$照射雷射時,使每單位時間的雷射之能量增大。、土 由上述it態樣係一種表面設有配線之立體構造物,藉 _ 士體構仏物的表面之配線方法獲得。 構造凸狀體設置傾斜面,於具有凸狀體之立體 置或方向,僅卜料㈣^• 财錢千台之配置位 僅化方向&amp;射㈣射’藉此於凸狀财好地 201247056 圖案。 [0017] ^依本發明’於凸狀體設置傾斜面,且朝凸狀體傾斜面照射 田士日、相幸父於朝平行於絕緣基材表面的面照射雷射時,使每單 射之能直增大’藉此在將配線形成於具有凸狀體之立 ,構k物表©時,可錢更雷射照㈣置或平台之配置位 °,僅沿一方向照射雷射,以在凸狀體良好地形成電路圖案。 【實施方式】 [0019] 已 4 往,於半導體封裝中,為避免封裝樹脂時金線偏移, ϋϊΓ代替引線接合而形成連結半導體晶片連接端子與絕緣 子之配線’俾緊貼延伸轉體晶片及絕緣基材表面 、、Ί ’有日樣半導體{表面會難以直接形成崎, 一發明’以絕緣樹脂被覆半導體晶片,於此絕緣樹 = =體表面形成配線(國際公開W02Gl()/()87336號公報)。' 線溝成n時,齡料射加獨成包含配 槽之電路圖案’可^精度獲得經細微化之高密度 列如’自凸狀體上表面橫跨側面乃至於絕緣基材表面連芦來 成電路圖案時,若令雷射自凸狀體上方 = =狀體上表面及絕緣基材表面,良好地二會; 而,雷射無法有效沖擊凸狀體側面,I法良 u然 好地形成,於凸狀體側面即會發生配線斷線。 /、良 [0021] 對於ΪίΪϊίΪΪΖ下列者而完成本發明:使凸狀體側面相 沖擊之傾斜面,藉此可不變更雷射照射裝置或是载置工Ug 9 201247056 台配置位置或方向,令雷射恰僅沿垂直於 ,以使電路圖案於凸狀體側面亦可良成。之方向照 ^案發明人等亦著眼於下列者而 :相對於絕緣基材表面非垂直面,而傾體側 邑緣基材表面之面照射雷射時,使每單 ,,稭此可不變更雷射照射裝置或是载置1作件^ ^月Ά 或方向,令雷射恰僅沿垂直於絕緣基 置 於凸狀體側面亦可良好地形成。机、、、射並移動, 面為傾斜面,此非科之事。於此有本細概部分2本 陳^下,分歸歡制麟狀_來朗本㈣實施形態。 [步驟說明] 〈第1及第3貫施形態&gt; 总i照圖1 ’說明本發明第1及第3實施形態。圖中,符!卢10 立體構造物’符號1GA、係中間構造物 ‘ “狀之連接端子,符號13係絕緣樹脂,符號13a 15 圖付之傾斜面,符號14係樹脂膜,符號 符號㈣電綱媒,魏17係電賴(配線), [0026] 依第1及第3實施形態之配線方法中,首先,如圖丨⑷所示, 201247056 準備於絕緣基材11安梦右雪 晶之遴勃主敗女裝有電子構件之構造物。電子構件俜多於姥 12 it 旧,於半雜W 有連接端子 12a於構造物表面露出。冑連料子12&amp;。此等連接端子11a、 [0027] 又,圖例雖顯示連接端子Ua、丨 體晶片12表面(未自表面突出)之^ °垃H基材11或半導 形成於絕緣基材u或半導5 / = 子lla、12a亦可 lla亦可係電路之-it 表面(自表面突出)。連接端子 [0028] =施形巧,未特別限定堆叠晶片對絕 法。例如:可夾著黏接層將堆疊晶片安裝於絕緣基=η。 晶片中半導體晶片12彼此之最居古土二土 且 接層堆疊半導體晶片12=Γ層方法亦未蚊。例如,可夾著黏 [0029] ㈣ίί^圖矣1iB)戶Γ ’以絕緣樹脂13被覆電子構件。藉此, 於,J基材11表面以絕緣樹脂13形成凸狀體13 緣基材U表面傾斜之傾斜面13b之凸狀體13a(=體 [0030] =土!!i凸狀體形成步驟’亦可將預先以絕緣樹脂13被覆電 子^者女裝於絕絲材11。藉此亦可於絕緣紐11表面以絕緣 樹脂械凸狀體13a(具有相對於絕緣基材11表面傾斜之傾斜 面13b之凸狀體13a)。 [0031] 又’圖例^ ’凸狀體13a之傾斜面13b雖連續為j個,但亦 V追隨梯狀堆4“,如_線所示,-傾斜面呈梯狀分為複數個。 [0032] 於此階段’可獲得中間構造物1〇A。中間構造物1〇A係用來 11 201247056 獲得於表面設有配線17之立體構造物ι〇之中間構造物。中間 造物10A包含: 絕緣基材11,及 凸狀體13a ’於絕緣基材11表面藉由絕緣樹脂形成。 又,凸狀體13a具有相對於絕緣基材u表面傾斜之傾 13b。 [0033] 其次’如圖1(C)所示,於凸狀體13a表面及未形成有凸 13a之絕緣基材11表面形成樹脂膜14(樹脂膜形成步驟)。 [0034] 於此階段’可獲得中間構造物10B。中間構造物聰 用來獲得於表面設有配線17之立體構造物1〇之中間盖 ^ 間構造物10B包含: ° f 絕緣基材11 ; 凸狀體13a ’於絕緣基材11表面以絕緣樹脂开彡 樹月旨膜Η,於凸;J大體Da表面及絕緣基材u表^以可 方式形成。 * &lt; 又 13b ,凸狀體13a具有相對於絕緣基材^表面傾斜之傾斜面 [0035] 其,,如圖1(D)所示,藉由自樹脂膜M 工,形成深度超過樹脂膜14之厚度,呈:面射加 案b。此時,沿垂直於絕緣基材n表面電路圖 雷射沿平行於絕緣基材丨i表面之方向;f射雷射(Laser)。 案形成步驟)。且對凸狀體13a之傾斜態之電路圖 對平行於絕緣基材11表面之面⑽例中絕緣時,相較於 】3a上表面}照射雷射時,使每單位的表面及凸狀體 施形態之電路圖案形成步驟)。 田射之此置增大(第3實 [0036] 12 201247056 電路圖案15之配線溝槽於凸狀體13a上表面、凸狀體i3a之 =斜面(侧面)13b、絕緣基材η表面連續形成,一端到達絕緣基材 ^之連接端子11a。電關案之賴孔自配線溝猶下方延 伸,到達半導體晶片12之連接端子12a。 [0037] 其次,如圖1(E)所示,令電鍍觸媒16或其前驅物包覆電路圖 表面及樹脂膜14表面(電鑛觸媒包覆步驟)。 脂膜步=。_示’藉由細旨膜14溶解或刺去除之(樹 [0039] 碰圖KG)所示,藉由進行無電解電鑛,僅在由電鐵觸 二ϋ别驅物形成之電鑛觸媒殘留之部位形成無電解電鍍膜 膜形成步驟)。藉此,獲得於表面設有配線17之立體 1G中,其後以封裝樹脂18封裝凸狀H 及配線17,成半導體封裝。 [0040] 矣而絲1及第3實施形態之配線方法所獲得,於 之立體構造物10之1例之俯視圖。圖中,辟 13d係凸狀體上表面。如圖示,配線17〜〗7樺跨絕緣基 儿 凸狀體13a之傾斜面13b及凸狀體❿上表面i3d ^ 表。面、 線17…17於凸狀體13a之傾斜面i3b亦盥絕緣美材u、/ *己 狀㈣上表㈣嫩好戦,^生^材11表面或凸 [0041] 1 民寸 &lt;第2及第4貫施形態〉 /參照圖3,說明本發明第2及第4實施形態 f 物’符號1GA、廳係中間構造物,符號^^ 材,付唬11a係絕緣基材之連接端子,符號12係 、、二 半晶片之連接端子,符號13係絕緣樹脂:“= 係凸狀體’付遽13b係凸狀體傾斜面,符號W係絕緣樹^層, 13 201247056 符號14係樹脂膜,符號15係電路圖案,符號 a 號17係電鍍膜(配線),符號18係封。糸電鍍觸媒,付 [0042] 、 依第2及第4貫施形態之配線方法中,首先 準備於絕緣基材11安裝有電子構件 ,3(A)所不, 疊之複數半導體晶片12(堆疊 f導^ =係多^堆 1C、LSI、VLSI、LED晶片等。乂體:曰片12,例如係 113,於半導體“ 12絲設冑2 連接端子 仏於構造物表面露出。有連私子以。此等連接端子以、 [0043] 又,圖例雖顯示連接端子lla、12 體晶片12表面(未自表面突出)心緣基材11或半導 形成於絕緣基^ 端子m亦可 na亦可係電路之表面(自表面突出)。連接端子 [0044] 法。irij二==限定堆疊晶片對絕緣基材u之安裝方 晶片中铸體晶片安裝於絕緣基材11。且堆疊 接層堆層方法亦姐定。修。,可夾著黏 [0045] 板。此^ :4絕緣基材11,亦可係例如放熱用金屬 [0046] 子Ua設於其次說明之絕緣樹脂13。 材11。藉此,不’以絕緣樹脂13被覆電子構件及絕緣基 體叫之絕緣掛、j基材11表面藉由絕緣樹脂13形成包含凸狀 π表面傾斜之倾粗曰^ Uc。此時,形成包含具有相對於絕緣基材 脂層形成步驟)/ 13b之凸狀體13a之絕緣樹脂層13c(絕緣樹 [0047] 為’邑緣樹$旨層形成步驟,亦可將預先以絕緣樹脂13被 14 201247056 覆電子構件者安裝於絕緣基材11。藉此亦可於絕緣基材η表面以 絕緣樹脂13形成凸狀體13a(具有相對於絕緣基材I〗表面傾 傾斜面13b之凸狀體13a)。 ^ [0048] 又,圖例中,凸狀體13a之傾斜面13b雖連續為丨個,但 可追隨梯狀堆疊晶片,如以鏈線所示’傾斜面呈梯狀分為複數個。 於此階段,可獲得中間構造物1GA。中間構造物· 獲得於表面設有配線17之立體構造物1〇之中間構造中 造物10A包含: 间稱 絕緣基材11 ;及 絕緣樹脂層13c,包含於絕緣基材u表面以 成之凸狀體13a。 所形 又 nb。 [0050] ’凸狀體1¼具有姆魏緣紐u表賴斜之傾斜面 其次,如圖3(C)所示’於絕緣樹脂層i3 # 脂膜形成步驟) [0051] 形絲舶。 糊日層⑸表㈣成樹脂膜14(樹 於此階段,可獲得中間構造物1〇Β。中 間構造物10Β包含: 絕緣基材11 ; 用來獲得於表面設有配線17之立體構造物忉、:也J p。,嫌诰舨1 ηη白厶: 〜τ间稱造物。中 13形成 之凸= 旨層及 13c’包含於絕緣基材11表面以絕緣樹脂 1北。 [0052] 樹脂膜14 ’於絕緣樹脂層13c表面以可去 又,凸狀體13a具編斜面 其次,如圖3(D)所示,藉由自樹脂膜14外表面側進行雷射加 15 201247056 工 ,形成深度超過樹脂膜14之厚度,?张圣沙y 槽及孔。藉此,於包含凸狀體13a之絶=狀,度之溝 路圖案Ϊ5。此時,沿垂直於絕緣基材^面形成電 (Laser)。雷射沿平行於絕緣基材u射雷射 =射=目較於料行於絕緣基㈣麵 月: 照射雷_以每單位時fB爾射之 路圖案形成步驟)。 此约大U 4貫娜怨之電 [0053] 電路圖案is之配線溝槽於凸狀體13a上表面 繼脂層i3e表面連續形成。電路圖案^ i 11之連接端子- [0054] 其^欠’如圖3(E)所示,令電鍍觸媒16或其前驅物包覆電 案15表面及樹脂膜14表面(電鐘觸媒 [0055] ) 脂膜t^r(F)解’藉__ 14溶_嫩除之(樹 [0056] 其次’如圖3(G)所示,藉由進行無電解電鍍,僅在由電鍍觸 ^ 16或其前驅物形成之電鍍觸媒殘留之部位形成無電解電鍍膜 (配線)17(電鍍膜形成步驟)。藉此,獲得於表面設有配線17之立體 構造物10。立體構造物10中,其後以封裝樹脂18封裝包含凸狀 體13a之絕緣樹脂層13c及配線π,成半導體封裝。, [0057] &quot; &lt;凸狀體其他構造&gt; 參照圖4、圖5、圖6,說明凸狀體13a之其他構造。圖4(a)〜 圖4(D)相當於第1及第3實施形態(B)凸狀體形成步驟結束之階 16 201247056 實施樹脂層i3c)所示,相當於第2及第4 第!及第3 ,之階段,、圖6相^於 19係晶片電感器或^容)形成步驟結束之階段。圖中,符號 板(圖6中係堆疊晶片),符^^係多層電路基 之連接端子,符號各電路基_ 6中係各晶片) 係再配線)。 連接端子與配線之連絡配線(圖6中 [0058] 堆叠晶片而形成。各半=絕緣樹脂13被覆此 因此,堆疊晶片不具11表面, 即,堆疊晶片、、、έ緣基材11表面傾斜之傾斜面。亦 成形成ί;=Γ。)雖不具有傾斜面’但被覆此之凸狀㈣ [0059] 相對於此’如圖4(a)所示,各丰導髀曰 緣基材U表面傾斜,因此,堆2之側面相對於絕 表面傾斜之鱗面。亦即,堆目對魏緣基材η [ooiot^13a 5 ^ 體…_面’追隨此’凸狀 亦可追隨梯狀堆疊晶片,、凸狀體以^線所示, 數個。 狀般a之傾斜面13b呈梯狀分為複 [0061] 且如圖4⑻所示’凸狀體13a亦 ====追=== 不限於此,亦可係+導體晶片電子構件)之側面雖 17 201247056 等突ϋ。狀體a中,絕緣樹脂13亦可被覆插腳或凸塊 [0062] 且如圖4(C)所示,凸狀體i3a亦可藉由將晶只雷咸吳+ $ + ΪίίΪ搭Ϊ元件19安裝於絕緣基材U,以絕緣樹^ Ϊ 麻彖基材表面,但被覆此之凸狀體13a成形成且有 心iti緣基材表面傾斜,被覆此之凸狀體❿_隨宜而 覆=::=。又’凸狀體说中,絕緣樹脂u柯被 [0063] 形。ΐ/如f 4(D)所* ’凸狀體❿* ’絕緣樹月旨13亦可成形為凸 ’雖係凸狀體A為實心之情形,但依狀況亦可中空。 i t 输彡胁靖_ ig表面之配 [0064] 或衝材等電子構件以外之構成構件。 多片ΐίϊϋ不’凸狀體❿亦可藉由將搭載於絕緣基材11之 20 f脂13被覆而形成。構成多層電路基板 於立體構連接w2Ga經由連絡配線電性連接形成 配線?7構^ (更詳細而言係凸狀體13a之傾斜面说)之 作為用來# η、^ϋ達絕緣基材11之連接端子lla。配線17用 Ϊίϊί f連接多層電路基板2G之外部配線。在此,亦可代替 ===2”基板2°最下層之電路基板二 未形成配線17\側電路基板2G。凸狀體13a側面中 [0065] 下列絡配線勘於凸狀體仏内部水平延伸。可例如 又版作之。預先,多層電路基板20各連接端子20a連接連 18 201247056 絡配線20b之-端。製作凸狀體13a日夺,使連絡配線2〇b水平延 1 ’連絡配、線20b之另-端面對凸狀體13a之傾斜面既。電路圖 案=成步驟巾’形成配線溝槽,俾依序通過自應連接之電路基板 延伸之連絡配線20b另一端。 [0066] M 所示’凸狀體13a亦可藉由將搭載於絕緣基材11之 片樹脂13被覆而形成。構成堆疊晶片20之各晶 ΐ 再配線勘電性連接形成於立體構造物w表 凸狀體13a之傾斜面13b)之配線17。配線17更 i連接端子lla。配線17用作為用來使堆疊晶片 ίοοΓη片間連接外部配線(可代替貫通矽通孔(Tsv))。 之傾狀體13a具有相對於絕緣基材11表面傾斜 可為狀為胁獅等,但亦 之卜矣而了依狀况為不具有平行於絕緣基材11表面 挪或®錐料。·^亦可為半球形狀等。 以上凸S 體才f物10中僅存在1個,亦可存在2個 上夺’各凸狀體13a可在如前诚爐;止φ在土曰s 相同之構造s亦可係不同構造(混載)。 ° [0069] &lt;凸狀體各部規格&gt; γ係雷射焦點位置,符號z z㈣m係雷射照射裝置,符號 焦點位置之轉),符號θ·晴於絕緣;面至雷射 傾斜角度。又,所謂基準面係樹脂&amp; 2狀體傾斜面之 絕緣樹脂丨3之紅歧縣紐’續賴Η下層 [0070] 19 201247056 緣基======㈣之傾斜角度㊀在絕 上限值在_ 絕緣基材11表面為10。〜83。。 下則f A理相4。上限值在75。以下則更佳。上限值在60。以 [Sif為心。上限值在衫。以下則極為理想。 -a &amp;錄、z純角化。不過,依狀況(例如依角隅部 係^之角隅%去角或曲隅面部 =或曲面化。例如,無需將原來即 [0072] 本實施形態中,立體構造物1G及凸狀體❿之大小可依立 :造之各種用途等變更。例如,立體構造物1〇之長度或J 寬度(付唬a)約為1mm至數十cm,凸狀體13a基部長度或 (符號b)約為1〇哗至數十cm ’凸狀體❿高度(符號c)約為= 至數mm。 [0073] 本實施形態中,雷射照射裝置X無特別限定。例如,可適告 使用二氧化碳氣體雷射、準分子雷射、uv_YAG雷射等。形: 電路圖案15之配線溝槽寬度例如約2〇μηι,亦可依狀況形成 微化之高密度電路圖案。 ” [0074] 本實施形態中,雷射照射各種參數可依各種構成凸狀體以 之絕緣樹脂13種類,或構成絕緣基材I〗之材料種類,及凸狀體 13a傾斜面13b之傾斜角度Θ等變更。例如雷射乙之頻率宜約為 10〜100Hz ’約為40〜70Hz更佳,約為50〜70Hz則相當理想,約^ 60〜70Hz則更為理想。雷射L之移動速度(沿平行於絕緣基材^ 表面之方向之移動速度:加工速度)宜約為100〜2〇〇111111/秒,約為 « 20 201247056 120〜150mm/秒則更佳,約為12〇〜14〇mm/秒 nowcw秒則極為理想。雷射L之輸’ 0.3-0.5W „J , 〇.35^〇.5W ^^ 〇 41;〇15〇;§, 才ίίί想。惟錄更雷射加工機頻率或速度或輪出之設定當然即 [0075] 昭身^第4實施形態中,對凸狀體仏傾斜面⑽ f 表面及ί狀體❿上表面⑽)照射雷射l二二單 p田射L之能量增大。藉由組合提高雷射乙 射L之機速度(泣速度)、提締射L = 以上並進行之,可實現此能量之增大。j出作者或2者 [0076] a㈣態中,設定雷射焦點位置y在凸狀體13基部附近 面13d附近位置之間。或是亦可設定雷職點位置γ 在凸狀體13基部位置與上表面13d位置之間。亦即,纽設 13之高度(c)之間’圖例中係在傾斜面现長度之間。此時, 古》又疋雷射焦點位置γ在低於凸狀體13基部之位置,亦可設定在 i if f體13上表面13d之位置。本實施形態中,前述自基準面 #二η焦點t置γ之距離稱為焦點偏離m。焦點偏離m可依凸 : 之各種尚度C等變更。焦點偏離m例如約為數μιη〜數_, 作為代表性數值之一,例如為〇 35mm等。 [0078] &lt;本實施形態之作用效果&gt; Μ丨/斤不之第1實施形態中,在包含(B)凸狀體形成步驟、(C) 形成步驟、(D)電路圖案形成步驟、⑻電鍍觸媒包覆步驟、 )樹脂膜去除步驟及(G)電鍍膜形成步驟之對立體構造物10表面 21 201247056 體形成步驟,形成具有相對於絕緣紐 對絕緣=?; f 凸狀體13a’於⑼電路圖案形成步驟, 外表‘昭射之方向^f雷射L。藉此,自樹脂膜14 训,,、'射之雷射L可有效沖擊凸狀體13a之傾 L相ίίϊίίί照射裝置X絲台之配置位置或方向,令雷射 對於絕緣A材^材矣U表面僅沿垂直方向照射,並同時令雷射L相 狀'if,表面恰平行移動,藉此不僅於絕緣基材11,Μ [0079] 斜面13b亦可良好地形成電路圖案15(參照圖2) 之傾G S 電路圖案形成步驟,對凸狀體13a 照射雷射L時,相較於對平行於絕緣基材11表面之 二射L時’使每單辦間f射L之能量增大。因此,可不 平台之配置位置或方向’令雷射L相對於 美^材▲表面僅沿垂直方向照射,並同時令雷射L相對於絕緣 轉,藉糾4於絕絲材1卜心狀體❿ [QQ8(^面13t&gt;亦可良好地形成電路圖案15(參照圖2)。The present invention relates to an intermediate structure structure in which a three-dimensional structure having wiring is provided on a surface of a three-dimensional structure. D [Prior Art] [0002] In recent years, with the increase in density of circuits in the electrical and electronic fields, wiring width, thinning, and narrowing of wiring intervals are progressing. Thinner, the narrower the wiring _, the more likely to cause short circuit or migration between adjacent wiring. [0003] In the meantime, Patent Document 1 describes the following circuit manufacturing method. First, a resin H is formed on the surface of the ruthenium G-edge substrate, and a circuit pattern is formed from the outside of the resin film or the hole. Secondly, the electroplating, the edge of the electric wire Φ and the ship's filaments are turned over. Standing times, tree mulch. Next, electroplating is performed on the circuit pattern by the insulating substrate of the peeled resin film. According to this technology, it is possible to use laser processing to convert the greenness to the outline of the circuit, and to [0004] ^ and to specialize in the literature 2 towel' as a technique for forming wiring on the surface of a three-dimensional structure such as a semiconductor package. It is revealed that the wiring and the groove having a depth greater than or equal to the thickness of the resin film are formed by the outer surface side of the insulating resin and the outer surface of the insulating resin. The _man' 5 electromineral catalyst or its precursor covers the surface of the wiring trench. Transfer it to remove it. Secondly, only after removing the resin film, the electro-mineral catalyst I is used to drive the red shaft of the red electric medium before the electroless electricity 201247056 coating. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2010-80946 (Paragraph 〇〇 1 [Patent Document 2] earning a publicly exclusive 2_〇87336) Falling 0126~013 12, FIG. 15 to 19) W. U.S. U.S. Patent Application [0006] The façade fabric of the invention described in Patent Document 2 is formed by the crystallization of the semiconductor substrate in the insulating substrate. The convex body on the surface of the insulating substrate and the side surface perpendicular to the surface of the insulating substrate. When forming a wiring trench on the upper surface of the convex body or the surface of the insulating substrate, a vehicle is projected from the outer surface side in a direction perpendicular to the upper surface of the convex body or the surface of the insulating substrate: thereby The wiring trench is formed by a good impact on the upper surface of the convex body or the surface of the insulating substrate. [0007] However, when the wiring trench is formed on the side surface of the convex body, in order to make the laser beam convexly good to the side surface of the convex body, it is necessary to change the arrangement position or direction of the laser irradiation device, or to place the platform of the three-dimensional structure_work piece. Configure the location or direction. Such an operation takes time and leads to a decrease in productivity. It is expected that such a defect will be possible and that the cost of production will be increased when the laser irradiation device or platform is modified. [0008] The present invention has been made in an effort to provide a wiring structure for a surface of a three-dimensional structure, an intermediate structure for obtaining a three-dimensional structure having a wiring on the surface thereof, and a three-dimensional structure having wiring on the surface thereof. When the wiring is formed on the surface of the three-dimensional structure of the convex body, the position or direction of the misalignment or the arrangement of the stage can be changed, and the radiation can be irradiated only in one direction to form a good circuit pattern on the convex body. [0009] 201247056 That is, the present invention is a step of forming a convex body on the surface of the three-dimensional structure, in order to delay the 丄&quot;, comprising: a resin film forming step, and 2, forming a convex shape from an insulating resin Body; circuit pattern forming step, # by the body from the outer surface of the surface of the substrate to form a tree moon film; plating catalyst coating step 'Lean and sapphire; face (four) · precursor package (four) road pattern table = film The removal step, go; and the residual of the catalyst = = no job, the step of electroplating by its fine ,, "has a tilted surface relative to the surface of the insulating substrate. In the circuit _ formation step, the edge of her edge is vertical Illuminating Ray [0010] JL is another intermediate structure of the present invention, comprising: 'turning to obtain a three-dimensional insulating substrate having wiring on the surface; and the convex body' borrowing from the surface of the insulating substrate The convex body has an inclined surface which is inclined with respect to the surface of the substrate, and the surface of the substrate is inclined to the surface of the three-dimensional structure. Square insulating resin layer forming step, containing a convex body Resin layer; %,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Appearance_Laser processing to form a deep circuit pattern; the main shape and depth of the grooves and / or holes, forming a 201247056 surface and covering steps, so that the electro-mineral catalyst or its precursor coated circuit pattern table resin film removal step , removing the resin film; and the catalyst == no? = medium or the plating surface formed by the precursor ====^_ on the insulating substrate. In the electrical shutdown _ age, Cheng Yuan New surface straight Directional irradiation of lightning [0012] Creating system - finely obtaining a three-dimensional insulating substrate having wiring on the surface; and an insulating resin layer comprising a convex body formed on the surface of the insulating substrate by an insulating resin An inclined surface that is inclined with respect to the surface of the insulating substrate. The method is g-shaped and its secret is simple—(4) depending on the wiring of the surface (4) surface ====== convex body; difficult thickness 'in the desired shape and depth ^ Face and chest, feeding the 峨 (4) road pattern table resin film removal step, In addition to the resin film; and the catalyst is not the medium or the electric ore formed by the precursor, and in the convex "forming step, the convex body having the inclined surface of the surface of the private wire is inclined to 201247056, toward the insulating substrate The surface is irradiated with a lightning in the vertical direction to form a step of the circuit pattern, and the convex surface of the convex body is irradiated to the surface of the mirror surface to illuminate the surface of the lightning surface in the vertical direction to illuminate the laser. The energy of the laser toward the early time parallel to the insulating substrate table [〇〇14] increases. Method, ^Invention of the other - Recording system - the wiring of the surface of the three-dimensional structure is the edge of the bar edge and the formation of the lipid layer, in the insulating resin layer containing the convex body; hunting on the surface of the substrate Forming a resin from the insulating resin to form a resin film on the surface; the thickness is in the shape of the hole = the surface and the step of the tree, the step of removing the resin film by removing the resin film from the circuit pattern of the electric or medium or the precursor =====Electric clock insulation forming step formed by the shaft knitting, forming an insulating layer comprising a convex body having an inclined surface inclined to the surface of the insulating coffin, then the edge substrate = circuit pattern forming step When the surface of the insulating substrate & the surface is irradiated toward the inclined surface of the convex body in the vertical direction, the laser is irradiated per unit time as compared with the surface of the insulating substrate. The energy increases. Soil The above-mentioned it is a three-dimensional structure in which wiring is provided on the surface, and is obtained by the wiring method of the surface of the body. The embossed body is provided with an inclined surface, and has a three-dimensional arrangement or direction of the convex body, and only the material (four) ^• The position of the financial platform is only the direction & the shot (four) shot 'by taking the convex shape good land 201247056 pattern. [0017] According to the present invention, the inclined surface is provided on the convex body, and the oblique surface of the convex body is irradiated to the surface of the surface of the insulating substrate to irradiate the laser, and each of the single shots is irradiated to the surface of the surface parallel to the surface of the insulating substrate. It can be directly increased 'by this, when the wiring is formed on the stand with the convex body, and the configuration of the k-object is ©, the laser can be irradiated (four) or the configuration position of the platform, and the laser is irradiated only in one direction. The circuit pattern is formed well in the convex body. [Embodiment] [0019] In the semiconductor package, in order to avoid gold wire offset when encapsulating the resin, the wiring for connecting the semiconductor chip connection terminal and the insulator is formed instead of the wire bonding. The surface of the insulating substrate, Ί 'Japanese-like semiconductors {the surface will be difficult to form a direct formation, an invention' is covered with a semiconductor resin with an insulating resin, and the insulating tree = = body surface forming wiring (International Publication W02Gl()/()87336 Bulletin). 'When the line groove is n, the age of the material is added and the circuit pattern containing the matching groove is selected'. The precision can be obtained by subdividing the high-density column such as 'the upper surface of the convex body across the side surface or even the surface of the insulating substrate. When the circuit pattern is formed, if the laser is made from the top of the convex body = the upper surface of the upper body and the surface of the insulating substrate, it is good for two; however, the laser cannot effectively impact the side of the convex body, and the method is good. The ground is formed, and the wiring is broken on the side of the convex body. /,良良 [0021] The present invention is completed by the following: an inclined surface that impacts the side of the convex body, thereby making it possible to change the position or direction of the laser irradiation device or the mounting device Ug 9 201247056 The shot is only perpendicular to the plane so that the circuit pattern can be formed on the side of the convex body. The inventors of the present invention also pay attention to the following: when the surface of the surface of the base material of the tilting side is irradiated with a laser against the non-vertical surface of the surface of the insulating substrate, the straw is not changed. The laser irradiation device is either placed with a workpiece or a direction such that the laser is formed well only along the side perpendicular to the insulating substrate on the side of the convex body. The machine, the, the shot and the movement, the surface is the inclined surface, this non-section. Here is a summary of this part of the 2nd Chen Chen, divided into a favored _ _ _ Longben (four) implementation. [Description of Steps] <First and Third Configuration Modes> The first and third embodiments of the present invention will be described with reference to Fig. 1 '. In the figure, Fu! Lu 10 three-dimensional structure 'symbol 1GA, intermediate structure' "connection terminal, symbol 13 insulation resin, symbol 13a 15 Figure of the inclined surface, symbol 14 resin film, symbol symbol (four) electricity In the wiring method according to the first and third embodiments, first, as shown in Fig. 4 (4), 201247056 is prepared for the insulating substrate 11 The 遴 主 主 女装 女装 女装 女装 女装 女装 女装 女装 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 it it it it it it it it it it it it it it it it it it it it it it it it 0027] Further, the illustration shows that the connection terminal Ua and the surface of the body wafer 12 (not protruding from the surface) are formed on the insulating substrate u or the semiconductor 5 or the sub-lla, 12a. The lla can also be a circuit-it surface (protruding from the surface). The connection terminal [0028] = the shape of the chip, the stacking wafer is not particularly limited. For example, the stacked wafer can be mounted on the insulating substrate with the adhesive layer interposed therebetween. = η. The semiconductor wafers 12 in the wafer are the most ancient and two layers of each other. The conductor wafer 12=the layer method is also a mosquito. For example, the electronic component can be covered with the insulating resin 13 by sandwiching the adhesive [0029] (4), and the surface of the J substrate 11 is made of an insulating resin. 13 forming the convex body 13 The convex body 13a of the inclined surface 13b of the edge of the base material U is inclined (the body [0030] = soil!! i convex body forming step] may also be coated with the insulating resin 13 in advance. In the case of the insulating member 11, the insulating member 11a (the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating substrate 11) may be used on the surface of the insulating member 11. [0031] 'Illustration^' Although the inclined surface 13b of the convex body 13a is continuous j, but V follows the ladder-shaped stack 4", as shown by the _ line, the inclined surface is divided into a plurality of ladders. [0032] In the stage, the intermediate structure 1A can be obtained. The intermediate structure 1〇A is used in 11 201247056 to obtain an intermediate structure in which the three-dimensional structure ι is provided on the surface. The intermediate product 10A includes: an insulating substrate 11, And the convex body 13a' is formed of an insulating resin on the surface of the insulating substrate 11. Further, the convex body 13a has a surface opposite to the insulating substrate u. [0033] Next, as shown in Fig. 1(C), a resin film 14 is formed on the surface of the convex body 13a and the surface of the insulating base material 11 on which the projection 13a is not formed (resin film forming step). At this stage, the intermediate structure 10B can be obtained. The intermediate structure of the intermediate structure is used to obtain the three-dimensional structure 1B having the wiring 17 on the surface, and the intermediate structure 10B includes: ° f insulating substrate 11; convex shape The body 13a' is formed on the surface of the insulating substrate 11 by an insulating resin, and is formed on the surface of the large Da surface and the insulating substrate. * &lt; Further, 13b, the convex body 13a has an inclined surface inclined with respect to the surface of the insulating substrate [0035], as shown in Fig. 1(D), by forming a depth exceeding the resin film by the resin film The thickness of 14 is: face shot plus case b. At this time, the laser is perpendicular to the surface of the insulating substrate n. The laser is directed in a direction parallel to the surface of the insulating substrate 丨i; a laser is emitted. Case formation step). Further, when the circuit diagram of the inclined state of the convex body 13a is insulated in the case of the surface (10) parallel to the surface of the insulating substrate 11, when the laser is irradiated with respect to the upper surface of the 3a, the surface and the convex body are applied per unit. Form circuit pattern forming step). The field is increased. (3rd real [0036] 12 201247056 The wiring pattern of the circuit pattern 15 is formed on the upper surface of the convex body 13a, the convex body i3a = the inclined surface (side surface) 13b, and the surface of the insulating substrate η is continuously formed. One end reaches the connection terminal 11a of the insulating substrate ^. The via hole of the electrical connection case extends from the wiring groove to the connection terminal 12a of the semiconductor wafer 12. [0037] Next, as shown in FIG. 1(E), the plating is performed. The catalyst 16 or its precursor coats the surface of the circuit diagram and the surface of the resin film 14 (electro-metal catalyst coating step). The lipid film step =. _ shows that the film 14 is dissolved or punctured by the thin film (tree [0039] As shown in Fig. KG), by electroless electrowinning, an electroless plating film formation step is formed only in a portion where the electrocaloric catalyst formed by the electric iron contact is left. Thereby, in the stereo 1G in which the wiring 17 is provided on the surface, the convex H and the wiring 17 are encapsulated by the encapsulating resin 18 to form a semiconductor package. [0040] A plan view of an example of the three-dimensional structure 10 obtained by the wire bonding method of the wire 1 and the third embodiment. In the figure, the upper surface of the convex body is 13d. As shown in the figure, the wiring 17 to 7 are formed by the inclined surface 13b of the convex body 13a and the upper surface i3d of the convex body. The surface, the line 17...17 on the inclined surface i3b of the convex body 13a is also insulated from the material u, / * has a shape (four) on the table (four) is tender, the surface of the material 11 or convex [0041] 1 inch inch &lt; 2 and 4th embodiment> Referring to Fig. 3, the connection terminals of the first and fourth embodiments of the present invention, the symbol 1GA, the hall intermediate structure, the symbol, and the 11a insulating substrate, will be described. , symbol 12, connection terminal of two halves, symbol 13 is insulating resin: "= convex body" 遽 13b convex body inclined surface, symbol W is insulating tree layer, 13 201247056 symbol 14 resin Film, symbol 15 series circuit pattern, symbol a 17-series plating film (wiring), symbol 18-series. 糸 plating catalyst, [0042], according to the wiring method of the second and fourth modes, first prepare The electronic component is mounted on the insulating substrate 11, and the plurality of semiconductor wafers 12 are stacked in a stack of 3 (A) (the stacking is a stack of 1C, an LSI, a VLSI, an LED chip, etc.): a wafer 12, For example, the system 113 is exposed on the surface of the structure in the semiconductor "12 wire 胄 2 connection terminal. There is a connection to the connection. These connection terminals are, [0043] again, For example, although the surface of the connection terminal 11a, 12 body wafer 12 (not protruding from the surface), the core substrate 11 or the semiconducting layer is formed on the insulating base terminal m, or may be the surface of the circuit (projecting from the surface). [0044] Method. Iirij===Defining the stacked wafer to the insulating substrate u The mounting wafer in the mounting wafer is mounted on the insulating substrate 11. The stacking layer stacking method is also determined. The insulating substrate 11 may be, for example, an exothermic metal [0046] Sub-Ua is provided in the insulating resin 13 described below. The material 11 is thereby not covered with the insulating resin 13 And the insulating substrate is called an insulating hang, and the surface of the j substrate 11 is formed by the insulating resin 13 to form a convex π surface inclined 曰 曰 U U U 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 U U The insulating resin layer 13c of the convex body 13a (insulating tree [0047] is a step of forming a layer of the edge of the tree, and may be attached to the insulating substrate 11 by an insulating member 13 previously covered with an insulating member 13 201247056. This also forms the convex body 13a with the insulating resin 13 on the surface of the insulating substrate η ( There is a convex body 13a) which is inclined with respect to the surface of the insulating substrate 1 with respect to the surface inclined surface 13b. [0048] Further, in the illustrated example, the inclined surface 13b of the convex body 13a is continuous, but can follow the ladder-shaped stacked wafer. As shown by the chain line, the 'inclined surface is divided into a plurality of ladders. At this stage, the intermediate structure 1GA is obtained. The intermediate structure is obtained in the intermediate structure of the three-dimensional structure in which the wiring 17 is provided on the surface. The product 10A includes: an insulating substrate 11 interposed therebetween; and an insulating resin layer 13c, which is included in the surface of the insulating substrate u to form a convex body 13a. Shaped and nb. [0050] The convex body 11⁄4 has an inclined surface of the slanting edge of the smear. Next, as shown in FIG. 3(C), the insulating resin layer i3 #lip film forming step is performed. The paste layer (5) Table (4) is formed into the resin film 14 (at this stage, the intermediate structure 1 可获得 can be obtained. The intermediate structure 10 Β includes: an insulating substrate 11; and a three-dimensional structure for obtaining the wiring 17 on the surface 忉:: J p., 诰舨 诰舨 ηη 厶 厶 厶 〜 〜 〜 〜 〜 〜 〜 〜 〜 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中14' is on the surface of the insulating resin layer 13c, and the convex body 13a has a beveled surface. Next, as shown in Fig. 3(D), the laser is applied from the outer surface side of the resin film 14 to form a depth. Exceeding the thickness of the resin film 14, the sacred sand y groove and the hole, thereby forming a channel pattern Ϊ5 including the convex shape of the convex body 13a. At this time, the electricity is formed perpendicular to the insulating substrate. (Laser). The laser is laser-parallel to the insulating substrate. The laser is irradiated with the material in the insulating substrate. The illuminating ray is a step of forming a pattern of fB radiance per unit time. The wiring pattern of the circuit pattern is formed on the upper surface of the convex body 13a continuously along the surface of the lipid layer i3e. The connection pattern of the circuit pattern ^ i 11 - [0054] as shown in FIG. 3(E), the plating catalyst 16 or its precursor is coated on the surface of the circuit 15 and the surface of the resin film 14 (electric clock catalyst) [0055] The lipid film t^r (F) solution 'borrowed __ 14 dissolved_ tenderly removed (tree [0056] secondly] as shown in Figure 3 (G), by electroless plating, only by electroplating The electroless plating film (wiring) 17 is formed in the portion where the plating catalyst is formed by the contact 16 or its precursor (the plating film forming step). Thereby, the three-dimensional structure 10 having the wiring 17 on the surface is obtained. In the case of 10, the insulating resin layer 13c including the convex body 13a and the wiring π are encapsulated by the encapsulating resin 18 to form a semiconductor package. [0057] &lt;&lt;Other structures of the convex body&gt; Referring to Figs. 4 and 5, Fig. 6 is a view showing another structure of the convex body 13a. Fig. 4(a) to Fig. 4(D) correspond to the first and third embodiments (B) the step of forming the convex body forming step 16 201247056 Implementing the resin layer i3c) As shown, it is equivalent to the 2nd and 4thth! And in the third stage, the phase of Fig. 6 is in the stage of the end of the forming process of the 19-series wafer inductor or capacitor. In the figure, the symbol plate (the stacked chip in Fig. 6), the connection terminal of the multi-layer circuit base, and the respective circuit blocks in the circuit base 6 are rewiring. The connection wiring of the connection terminal and the wiring is formed by stacking the wafers in [0058] in Fig. 6. The respective halves = the insulating resin 13 is covered. Therefore, the stacked wafer does not have the surface of 11, that is, the surface of the stacked wafer, and the edge of the substrate 11 is inclined. Inclined surface. Also formed ί; = Γ.) Although there is no inclined surface 'but the convex shape is covered (4) [0059] Relative to this 'as shown in Fig. 4 (a), each of the fat guiding edge substrate U The surface is inclined so that the sides of the stack 2 are inclined with respect to the surface of the surface. That is, the stack may follow the ladder-shaped stacked wafers for the wei edge substrate η [ooiot^13a 5 ^ body..._face], and the convex bodies are shown by a plurality of lines. The inclined surface 13b of the shape a is divided into a ladder shape [0061] and as shown in Fig. 4 (8), the convex body 13a is also ======== not limited thereto, and may be a + conductor chip electronic component) Although the side is 17 201247056 and so on. In the shape a, the insulating resin 13 may also be covered with a pin or a bump [0062] and as shown in FIG. 4(C), the convex body i3a may also be a member of the prism 19 by using a crystal of only a salty sulphide + $ + Ϊ ίίΪ It is mounted on the insulating substrate U to insulate the surface of the substrate with an insulating tree, but the convex body 13a is formed to be formed and the surface of the substrate is inclined, and the convex body covered with the convex body _ ::=. Further, in the case of the convex body, the insulating resin u is [0063] shaped. ΐ/, as f 4 (D) * ′ 凸 ❿ 绝缘 绝缘 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ i t 彡 彡 靖 _ ig surface matching [0064] or components such as punching materials other than electronic components. The plurality of ridges may be formed by coating the 20 f grease 13 mounted on the insulating base material 11. The multilayer circuit board is formed by electrically connecting the three-dimensional structure w2Ga via the connection wiring to form a wiring structure (in more detail, the inclined surface of the convex body 13a) is used as the insulating substrate 11 for the η, ϋ The connection terminal 11a. The wiring 17 is connected to the external wiring of the multilayer circuit substrate 2G by Ϊίϊί f. Here, instead of the ===2" substrate 2, the circuit board 2 of the lowermost layer is not formed with the wiring 17\ side circuit board 2G. In the side surface of the convex body 13a [0065] The following wiring is recorded inside the convex body For example, the connection terminal 20a of each of the multi-layer circuit boards 20 is connected to the end of the 201247056 network wiring 20b. The convex body 13a is formed, and the connection wiring 2〇b is horizontally extended by 1 'connection. The other end face of the wire 20b is inclined to the convex body 13a. The circuit pattern=the step towel' forms a wiring groove, and sequentially passes through the other end of the connecting wire 20b extending from the circuit substrate to be connected. The 'protruding body 13a' shown by M can also be formed by covering the sheet resin 13 mounted on the insulating base material 11. The respective wafers constituting the stacked wafer 20 are re-wired and electrically connected to each other to form a three-dimensional structure w. The wiring 17 of the inclined surface 13b) of the shape 13a. The wiring 17 is further connected to the terminal 11a. The wiring 17 is used to connect the stacked wiring to the external wiring (which can replace the through-hole (Tsv)). The body 13a has a shape that is inclined with respect to the surface of the insulating substrate 11. Lions, etc., but also according to the situation, do not have parallel to the surface of the insulating substrate 11 or ® cone material. ·^ can also be a hemispherical shape, etc. The above convex S body only has 1 in the object 10 There may also be two upper-capacity 'each convex body 13a can be in the former furnace; the same structure s in the soil 曰 s can also be different structures (mixed). ° [0069] &lt; convex body Specifications of each part > γ-ray laser focus position, symbol z z (four) m-ray laser irradiation device, symbol focus position rotation), symbol θ · clear to insulation; surface to laser tilt angle. Also, reference surface resin &amp; Insulating Resin of the inclined surface of the 2-shaped body 红3 of the Hongqi County New ' continuation of the lower layer [0070] 19 201247056 rim base ====== (4) The inclination angle is at the upper limit of _ the surface of the insulating substrate 11 The ratio is 10. to 83. The lower limit is f A. The upper limit is 75. The upper limit is 60. The upper limit is 60. The upper limit is in the shirt. The following is extremely desirable. a &amp; recording, z pure keratinization. However, depending on the situation (for example, according to the angle of the 隅 系 ^ ^ 去 去 去 或 或 或 或 or curved face = or curved. For example, do not need to be the original [0072] this embodiment In addition, the size of the three-dimensional structure 1G and the convex body 可 can be changed depending on the various uses and the like. For example, the length of the three-dimensional structure 1 or the width J (approximately a) is about 1 mm to several tens of cm, convex. The length of the base of the shape 13a or (symbol b) is about 1 〇哗 to several tens of cm 'the height of the convex body ( (symbol c) is about = to several mm. [0073] In the present embodiment, the laser irradiation device X There is no particular limitation. For example, a carbon dioxide gas laser, a pseudo-molecular laser, a uv_YAG laser, or the like can be used. Shape: The width of the wiring trench of the circuit pattern 15 is, for example, about 2 〇 μηι, and a high-density circuit pattern can be formed according to the situation. [0074] In the present embodiment, the laser irradiation various parameters may be various types of the insulating resin 13 or the material type of the insulating substrate I and the inclined angle of the inclined surface 13b of the convex body 13a. For example, the frequency of laser B should be about 10~100Hz. It is preferably about 40~70Hz. It is quite ideal for about 50~70Hz. It is more ideal for about 60~70Hz. The moving speed of laser L (moving speed in the direction parallel to the surface of the insulating substrate ^: processing speed) is preferably about 100~2〇〇111111/sec, more preferably about «20 201247056 120~150mm/sec, about 12〇~14 〇mm/second nowcw seconds is extremely ideal. Laser L loses '0.3-0.5W „J , 〇.35^〇.5W ^^ 〇41; 〇15〇; §, only ίίί. However, the setting of the frequency or speed of the laser processing machine or the setting of the wheel is of course [0075]. In the fourth embodiment, the surface of the inclined surface (10) f of the convex body and the upper surface (10) of the convex body are irradiated with lightning. The energy of the shot l two two single p field L is increased. This energy increase can be achieved by combining the speed of the laser beam L (cry speed) and the ejection of L = above. j. The author or the two [0076] In the a (four) state, the laser focus position y is set between the positions near the base 13d near the base of the convex body 13. Alternatively, the position of the mine position γ may be set between the position of the base of the convex body 13 and the position of the upper surface 13d. That is, the height between the heights (c) of the buttons 13 is between the lengths of the inclined faces. At this time, the ancient 疋 laser focus position γ is lower than the base of the convex body 13, and can also be set at the upper surface 13d of the i if f body 13. In the present embodiment, the distance from the reference surface #二η focus t to γ is referred to as a focus deviation m. The focus deviation m can be changed according to the convexity: various degrees C and the like. The focus deviation m is, for example, about several μηη to _, and is one of representative values, for example, 〇 35 mm or the like. &lt;Operation and Effect of the Present Embodiment&gt; In the first embodiment, the (B) convex body forming step, the (C) forming step, the (D) circuit pattern forming step, and the (D) circuit pattern forming step are included. (8) Electroplating catalyst coating step, ) Resin film removing step and (G) plating film forming step on the surface of the solid structure 10 21 201247056 Body forming step, forming insulation with respect to the insulating pair = F; convex body 13a 'In (9) circuit pattern forming step, appearance 'direction of the shot ^f laser L. Thereby, from the resin film 14 training, the 'shot laser L can effectively impact the tilting direction of the convex body 13a. The position or direction of the X-ray table of the device is irradiated, so that the laser is insulated for the material A. The U surface is irradiated only in the vertical direction, and at the same time, the laser L phase is shaped as 'if, and the surface is moved in parallel, whereby not only the insulating substrate 11, but also the inclined surface 13b can form the circuit pattern 15 well (refer to the figure). 2) The step of forming the GS circuit pattern, when the laser beam L is irradiated to the convex body 13a, the energy of the L-ray is increased per unit when compared with the two-shot L parallel to the surface of the insulating substrate 11. . Therefore, the position or direction of the platform can be omitted, so that the laser L is irradiated only in the vertical direction with respect to the surface of the material ▲, and at the same time, the laser L is rotated relative to the insulation, and the wire is cut into the heart. ❿ [QQ8 (^ surface 13t>) The circuit pattern 15 can also be formed well (see Fig. 2).

II

雖吞ΐUi緣基材11表面沿垂直方向照射雷射L時,雷射L 面m愛f平行於絕緣基材11表面的面,但對凸狀體13a之傾斜 之傾直沖擊而係傾斜沖擊。其結果,於凸狀體13a 於凸狀H ^之反射增加,能量分布高的部分減少。因此, 於编Hi %所形成之電路圖案15之溝槽或孔傾向 於鈿小(溝槽或孔之寬度或深度變細或變淺 [0081] 之勺IH15之溝槽或孔若縮小’電路圖案15中電鐘觸媒16 ^覆里即會減少,以電鍍觸媒16為核心成長夂無電解電膜 以會變得難以形成。其結果,於凸狀體m之傾斜面既會易 梯配線17之斷線。或是電路圖案15之溝槽或孔若縮小,溝 白曰it容量即會減少,故成長之無電解電麵(配線)17會易於 自溝槽或孔溢出而過度魏。其結果,易於引起短路或遷移。 22 201247056 [0082] 面對如此失放之情形,於凸狀體13a之傾斜面13b 罝 時間雷射L之能量增大,钕闵帝身 文母早位 产甘^^ 故因雷射L之反射失去之能量可獲得補 J、之 饧。八二果,形成於傾斜面13b之電路圖案15之溝槽或孔縮, 傾向可獲得抑制,可抑购線或瓣或是遷移 '、' [0083] 第1及第3實施形態之中間構造物10A、10B包含: 絕緣基材11 ;及 凸狀體13a ’於絕緣基材.^表面以絕緣樹脂13形成。 又’凸狀體13a具有相對於絕緣基材u表面傾斜之傾斜面 1 罢3by°m’此等中間構造物騰、腦巾,可不變更雷射照射裝 或平口之配置位置或方向,令雷射丄相對於絕緣基材u表面 ,沿垂直f向照射’並同時令雷射匕相對於絕、緣基材U表面恰平 灯移動’藉此不僅於絕緣基材u,在凸狀體13a之傾斜面既亦 I良好地形成電路圖案15。因此,此等中間構造物嫩、麵適 δ作為用賴面設有配叙讀構造物丨0之巾 [0084] 第1及第3實施形態之中間構造物更包含於凸狀體13a ^及絕緣基材11表面以可去除之方式形成之樹脂膜14。因此, 5越此樹脂膜14而在凸狀體13a表面及絕緣基材u表面形成電 =圖案15,包覆電鏟觸媒ι6後,去除樹脂膜14,藉此使電鍵觸 、可僅殘留於電路圖案15之部分’形成無電解電嫂膜(配線)17。 因j,此中間構造物10B更適合作為用械得於表面設有配線之 立體構造物10之中間構造物。 [0085] 圖3所示之第2及第4實施形態宁,在包含(B)絕緣樹脂層形 成步驟、(C)樹脂膜形成步驟、(d)電4圖案形成步驟、但)電鍍觸 ,包覆_、(:ρ)_駐除步·((})電顧舰轉讀立體構 10表面之配線方法内,於(Β)絕緣樹脂層形成步驟,形成包含 八有相對於絕緣基材11表面傾斜之傾斜面13b之凸狀體13a之絕 23 201247056 緣樹脂層13c,於(D)電路圖案形成牛&amp; 直方向照射雷射L·。藉此,自樹,對絕緣基材11表面沿垂 有效沖擊凸狀體13a之傾斜面i^ 外表面侧照射之雷射L可 X或平台之配置位置或方向,人’可不變更雷射照射裝置 沿垂直方向照射’並同時令雷:相對==材η表面僅 移動,藉此不僅於絕緣樹脂層13c中且古;^基材11表面恰平行 之表面之部分’在凸狀體丨3傾钭面『二於絕緣基材11表面 圖案15。 .貝斜面13b亦可良好地形成電路 [0086] 變更雷射照射裝置X或平台之配詈# 大口此,可不 絕緣狀11 #祕%千置置或方向’令魏L相對於 ίίίΛ 方向照射’並同時令雷射L相對於絕緣 基材11表面恰平行移動,藉此不僅於絕緣樹脂層以巾且有= 於絕緣基材11表面之表面之部分,在凸狀體13a之傾斜^现 可良好地形成電路圖案15。亦即,於傾斜面既因雷射 ^ 失去之能量可獲得補償’形成於傾斜面13b之電路圖案Μ 接 [ϊί小之傾向可猶抑制,可抑_線或鱗或是遷移之問題曰。 第2實施形態之中間構造物ι〇Α、1〇Β包含: 絕緣基材11 ;及 絕緣樹脂層13c,包含於絕緣基材U表面以絕緣 之凸狀體13a。 且第4實施形態之中間構造物ι〇Α、10B包含: 絕緣基材11 ;及 絕緣樹脂層13c’包含於絕緣基材η表面以絕緣樹浐 之凸狀體13a。 9 [0088] 又’無論是在任一者中’凸狀體13a皆具有相對於絕緣基材 24 201247056 之傾斜面13b。因此,此等中間構造物1()A、10B中, 對:ίΐΐ射照射裝置X或平台之配置位置或方向 ,令雷射L相 絕绦二材^1表面僅沿垂直方向照射,並同時令雷射L相對於 平行二㈣恰平行移動’藉此不僅於絕緣樹脂層13c中具有 11表面之表面之部分,在凸狀體说之傾斜面说 i商人ί 成電路圖案15。因此’此等中間構造物10A、_ [00^9]為用來獲得表面設桃線之立體構造物10之中間構造物。 13c ^ 2及,4貫施形態之中間構造物10B更包含於絕緣樹脂層 面以可去除之方式形成之樹脂膜14。因此,跨越此樹脂膜 kUt脂層13c表面形成電路圖案15,包覆電鍍觸= 八知膜14 ’藉此使電鍍觸媒可僅殘留於電路圖案15之部 二電解電錢膜(配線)17。因此’此中間構造物励更適合 [ooiof來獲得於表面設桃線之域構造物1G之巾間構造物。 穿雷ϊϋ第4實施形態中,不僅於電子構件(堆疊晶片),在未安 jr構件之絕緣基材11部分上亦形成絕緣樹脂層13e。又,於 、、、=脂層13e表面形成電路_15,形成配線17。因此,可防 自=。17接觸絕緣基材u之連接端子Ua,擴大配線17迴繞之 [0091] 本實施形態中,凸狀體13a係下列中至少任一者: 絕緣樹脂13呈凸狀成形(圖4(D)); 將安裝於絕緣基材η之電子構件(電子構件具有相對於絕緣 基材11表面傾斜之傾斜面)以絕緣樹脂13 4(A)、圖4(B));及 很復糟此形成(圖 將安裝於絕緣紐11之電子構件(電讀料具有相絕 緣基材11表面傾斜之傾斜面)以絕緣樹脂13 ', 1(B)、圖·、圖⑽。 被覆错此形成(圖 藉此’可依立體構造物10是否侧如轉麟錢電路基板 25 201247056 者而自此等射選擇凸狀體13n 斜面之情形即ί件絕緣基材11表面傾斜之傾 =13a形成傾斜面可輕易於被覆電子構件之 ί實=態中,電子構件係下列中至少任-者: 早一半導體晶片(圖4(B)); ί 之複數半導體晶片⑽1⑻、圖3(Β)、圖4(Α));及 =片電感器或電容器等電路搭載元件(圖4(Q)。)及 等任1而=立等如半導體封料電路基板 [0094] 如圖1(B)、圖3(B)、圖4(A)所*之堆疊晶片巾,夢由 態立體構造物1G之表面配線,她 ^ ‘ 省空間化、配線自由度之增大、可靠 了:;見 日日片之大型化、更多段化等。 層 [0095] 本實施形態中,凸狀體l3a傾斜面13b之傾斜 =11表面角度為0。時’相對於絕緣基材u表面為:邑夢 由使凸狀體13a傾斜面13b之傾斜角度θ為如此範圍 ^ ^H13a基部之長度或度⑻不過大’且不變更雷射照射^ ί ί之配置位置或方向,令雷射L相對於絕緣基材U j ,垂直方向照射’並同時令雷射L相對於絕緣基材u表 = 動,藉此於該傾斜面13b可充分滿足地形成電路圖案15。° 又’第3及第4實施形態中,藉由提高雷射乙之頻率 雷射L之移動速度(加工速度)且/或提高雷射L之輸出 射LM量增大,故可簡單且辟地實絲㈣#之增大。 26 201247056 么且於第3及第4實施形態中,凸狀體13a傾斜面13b之傾斜 : : t單位時,射l之能量愈更為增大,故即使傾:When the surface of the Ui edge substrate 11 is irradiated with the laser beam L in the vertical direction, the laser surface L is in parallel with the surface of the surface of the insulating substrate 11, but the tilting impact on the inclination of the convex body 13a is obliquely impacted. . As a result, the reflection of the convex body 13a in the convex H^ is increased, and the portion having a high energy distribution is reduced. Therefore, the trench or hole of the circuit pattern 15 formed by the Hi% tends to be small (the width or depth of the trench or the hole is thinned or lightened [0081]. The groove or hole of the IH15 is reduced] circuit In the pattern 15, the electric clock catalyst 16 ^ is reduced, and the electroplating catalyst 16 is used as the core to grow and the electroless electroless film is formed, so that it becomes difficult to form. As a result, the inclined surface of the convex body m is easy to be formed. If the wiring or the hole of the circuit pattern 15 is reduced, the capacity of the groove will be reduced, so that the growth of the electroless (electrical) surface 17 will easily overflow from the groove or the hole. As a result, it is easy to cause a short circuit or migration. 22 201247056 [0082] In the face of such a loss, the energy of the laser L is increased on the inclined surface 13b of the convex body 13a, and the body of the emperor is early. Therefore, the energy lost by the reflection of the laser L can be supplemented with J. The octagonal fruit, the groove or the hole of the circuit pattern 15 formed on the inclined surface 13b, tends to be suppressed, and can be suppressed. Line or flap or migration ', ' [0083] The intermediate structures 10A, 10B of the first and third embodiments include: an insulating base The material 11 and the convex body 13a' are formed of an insulating resin 13 on the surface of the insulating substrate. The 'convex body 13a has an inclined surface 1 inclined with respect to the surface of the insulating substrate u. The object or the brain towel can change the position or direction of the laser irradiation device or the flat opening, so that the laser beam is irradiated along the vertical f direction with respect to the surface of the insulating substrate u, and at the same time, the laser beam is opposite to the edge and the edge. The surface of the material U is moved by the flat lamp. Thus, not only the insulating substrate u but also the circuit pattern 15 is formed well on the inclined surface of the convex body 13a. Therefore, the intermediate structure is tender and the surface is suitable for δ. The surface of the first and third embodiments is further provided on the surface of the insulating body 11a and the resin substrate 14 which is formed in a removable manner. Therefore, the electric film 15 is formed on the surface of the convex body 13a and the surface of the insulating substrate u over the resin film 14, and after the electric shovel catalyst ι6 is coated, the resin film 14 is removed, whereby the electric key can be touched. The portion remaining in the circuit pattern 15 'forms an electroless electrolytic film (wiring) 17. This intermediate structure is due to j 10B is more suitable as an intermediate structure in which the three-dimensional structure 10 having wiring is provided on the surface. [0085] The second and fourth embodiments shown in FIG. 3 include a step (B) of forming an insulating resin layer. (C) resin film forming step, (d) electric 4 pattern forming step, but) electroplating contact, cladding _, (: ρ) _ station step ((}) electric ship to read the stereo 10 surface wiring In the method, in the (Β) insulating resin layer forming step, the edge 23 201247056 edge resin layer 13c including the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating substrate 11 is formed, and the (D) circuit pattern is formed. The cow &amp; directs the laser L·. Thereby, from the tree, the surface of the insulating substrate 11 is irradiated with the inclined surface of the vertical effective impact convex body 13a, and the position or direction of the laser is irradiated, and the position of the laser can be changed without changing the laser irradiation. The device illuminates 'in the vertical direction' and at the same time causes the lightning: relative == material η surface to move only, thereby not only in the insulating resin layer 13c but also in the surface of the substrate 11 which is exactly parallel to the surface of the substrate 11 in the convex body 丨 3 The tilting surface "two is in the surface pattern 15 of the insulating substrate 11. The beveled surface 13b can also form a circuit well [0086] Change the laser irradiation device X or the platform of the platform #大口 this, can not be insulated 11 #秘%千置置或方向'Welve Wei L relative to the ίίίΛ direction and At the same time, the laser beam L is moved in parallel with respect to the surface of the insulating substrate 11, whereby the inclination of the convex body 13a is good not only in the insulating resin layer but also in the portion of the surface of the surface of the insulating substrate 11. The circuit pattern 15 is formed. That is, the slope of the inclined surface is compensated by the energy lost by the laser. The circuit pattern formed on the inclined surface 13b is spliced. [The tendency of ϊί small can be suppressed, and the problem of _ line or scale or migration can be suppressed. The intermediate structure 〇Α, 1〇Β according to the second embodiment includes: an insulating base material 11; and an insulating resin layer 13c, which is provided on the surface of the insulating base material U to insulate the convex body 13a. Further, the intermediate structures ι and 10B of the fourth embodiment include: an insulating base material 11; and an insulating resin layer 13c' which is provided on the surface of the insulating base material η to insulate the convex body 13a. 9 [0088] Further, in either of them, the convex body 13a has an inclined surface 13b with respect to the insulating base material 24 201247056. Therefore, in the intermediate structures 1 () A, 10B, the position or direction of the illuminating device X or the platform is such that the surface of the laser L-phase is only irradiated in the vertical direction, and at the same time The laser beam L is moved in parallel with respect to the parallel two (four)', thereby not only the portion having the surface of the surface of the insulating resin layer 13c, but also the circuit pattern 15 on the inclined surface of the convex body. Therefore, the intermediate structures 10A and _[00^9] are intermediate structures for obtaining the three-dimensional structure 10 of the surface-setting peach line. The intermediate structure 10B of the 13c ^ 2 and 4 embodiments further includes a resin film 14 which is formed in a removable manner on the surface of the insulating resin layer. Therefore, the circuit pattern 15 is formed across the surface of the resin film kUt lipid layer 13c, and the plating contact is known as the octopus film 14', whereby the plating catalyst can remain only in the portion of the circuit pattern 15 (electrolytic film). . Therefore, the intermediate structure excitation is more suitable for [ooiof to obtain the inter-sheet structure of the surface structure 1G of the surface-setting peach line. In the fourth embodiment of the lightning striker, the insulating resin layer 13e is formed not only on the electronic component (stacked wafer) but also on the portion of the insulating base material 11 on which the jr member is not mounted. Further, a circuit _15 is formed on the surface of the grease layer 13e to form the wiring 17. Therefore, it can be prevented from =. 17 Contacting the connection terminal Ua of the insulating substrate u, and expanding the wiring 17 to rewind [0091] In the present embodiment, the convex body 13a is at least one of the following: The insulating resin 13 is formed in a convex shape (Fig. 4(D)) An electronic component (the electronic component having an inclined surface inclined with respect to the surface of the insulating substrate 11) to be mounted on the insulating substrate η is made of an insulating resin 13 4 (A), FIG. 4 (B)); The figure will be mounted on the electronic component of the insulating button 11 (the electrical reading material has an inclined surface inclined on the surface of the phase insulating substrate 11) to insulate the resin 13 ', 1 (B), Fig., and Fig. 10 (10). This can be based on whether the side of the three-dimensional structure 10 is the same as that of the sleek circuit board 25 201247056, and the inclination of the surface of the insulating substrate 11 is inclined. In the actual state of the coated electronic component, the electronic component is at least one of the following: a semiconductor wafer (Fig. 4(B)); a plurality of semiconductor wafers (10) 1 (8), Fig. 3 (Β), Fig. 4 (Α )); and = chip inductors or capacitors and other circuit-mounted components (Fig. 4 (Q).) and other 1 and = such as semiconductor sealing circuit [0094] As shown in Fig. 1 (B), Fig. 3 (B), and Fig. 4 (A), the stacked wafer towel, the surface wiring of the 1D stereoscopic structure 1G, saves space and wiring freedom. Increased and reliable: see the enlargement of the Japanese film, more segmentation, etc. Layer [0095] In the present embodiment, the inclination of the inclined surface 13b of the convex body l3a = 11 surface angle is 0. When 'relative The surface of the insulating substrate u is: the nightmare is such that the inclination angle θ of the inclined surface 13b of the convex body 13a is such a range ^ ^ H13a the length or degree of the base portion (8) is not too large and does not change the position of the laser irradiation ^ ί ί Or the direction, the laser L is irradiated with respect to the insulating substrate U j in the vertical direction, and at the same time, the laser L is rotated relative to the insulating substrate u, whereby the circuit pattern 15 can be sufficiently satisfied with the inclined surface 13b. Further, in the third and fourth embodiments, the moving speed (machining speed) of the laser beam L is increased, and/or the amount of output LM of the laser beam L is increased, so that it is simple and 26 201247056 In the third and fourth embodiments, the inclination of the inclined surface 13b of the convex body 13a is as follows: : t unit, shot l The energy is increased even more, so even if it is tilted:

又a ,亦可經常簡單且確實地補償於傾斜面13b因雷射L 之反射失去之能量。 [0098] π 土 軸巾,凸狀體13a複數面交又之舰部z因應所需 °亦即鈍角化。因此’於(〇樹脂膜形成步驟,藉 由例如塗布繼溶液或堆疊薄而軟的樹脂薄膜,可在凸狀體 脂;14。亦即’凸狀體13a之角隅部ζ若為銳角, 倉布·糾’有可能發生被覆不均而難以在越部Ζ表面良 成膜14。且堆疊薄而軟的樹脂薄膜時,薄膜有可能破 裂而難以在角’ Z表面良好地形成樹賴14。其絲 覆步驟及(G)電賴形成步驟,不要的電_媒16有 可月b 〇覆角隅部Z且形成電鐘膜而成為電路形成不良(電路短路 ^原因1在Ϊ,以去角或曲面化預先使凸狀體13a之角隅部Z鈍 此貫現於角隅部Z樹脂溶液陕的塗布或樹脂薄膜良好 [0099] 本實施形悲中,立體構造物1〇於表面設有配線17,藉由圖工 ,圖3所示之配線方法獲得,故於凸狀體⑸之傾斜面既亦可 良f地形严關案I5’*斷線而良好地形成配線丨%於第3及第 形態中’除此之外’更可抑制短路或遷移之問題)(參照圖2)。 本具把形態t,於(D)電路圖案形成步驟,形成深度超過樹脂 膜14厚度之溝槽及孔。因此,電路圖案15深入立體構造物1〇表 面,配線17其-部分或全部嵌入立體構造物1〇表面。其結果, /If升配線Π對立體構造物10之雜強度,抑制配線17脫落或 偏離。 [0101] 本實施形態中’於(D)電路圖案形成步驟,設定雷射焦點位置 27 201247056 Y在凸狀體13a基部附近位置與上表面i3d附近位置之間。亦即, 大致設定在凸狀體13a傾斜面13b之長度之間。一般而言,雷射 力口工時,宜保持雷射L之焦點位置γ於—定。然而,本實施形態 中,加工對象物係對lOOnm〜4〇〇nm波長區域之雷射光具有高吸收Also a, it is also possible to easily and surely compensate for the energy lost by the reflection of the laser beam L on the inclined surface 13b. [0098] π soil Axle, the convex body 13a of the plurality of face-to-face and the ship's z are required to be obtuse. Therefore, (in the resin film forming step, by, for example, coating a solution or stacking a thin and soft resin film, it is possible to use a convex body fat; 14. That is, if the angle of the convex body 13a is an acute angle, It is difficult for the shovel cloth to be unevenly coated and it is difficult to form a film 14 on the surface of the yttrium. When a thin and soft resin film is stacked, the film may be broken and it is difficult to form a good ridge on the corner 'Z surface. The wire coating step and the (G) electric ray forming step, the unnecessary electric medium 16 has a month b 〇 corner 隅 portion Z and forms an electric clock film to become a circuit formation failure (circuit short circuit ^ cause 1 in the De-angching or surface-forming, the corner portion Z of the convex body 13a is bluntly formed in the corner portion Z resin solution, or the resin film is good. [0099] In this embodiment, the three-dimensional structure 1 is on the surface. The wiring 17 is provided, and the wiring method shown in FIG. 3 is obtained by the drawing. Therefore, the inclined surface of the convex body (5) can be well formed, and the wiring is well formed by the I5'* disconnection. In the third and second aspects, 'other than this', the problem of short circuit or migration can be suppressed (see Fig. 2). t, in the (D) circuit pattern forming step, grooves and holes having a depth exceeding the thickness of the resin film 14 are formed. Therefore, the circuit pattern 15 penetrates the surface of the three-dimensional structure 1 , and the wiring 17 is partially or entirely embedded in the three-dimensional structure 1 As a result, the /If wiring is used to suppress the misalignment of the three-dimensional structure 10, and the wiring 17 is prevented from falling off or deviating. [0101] In the present embodiment, the laser focus position is set in the (D) circuit pattern forming step. Y is located between the position near the base of the convex body 13a and the position near the upper surface i3d. That is, it is substantially set between the lengths of the inclined faces 13b of the convex body 13a. Generally, it is preferable to maintain the lightning force during the working hours of the laser beam. The focus position γ of the shot L is set to be constant. However, in the present embodiment, the object to be processed has high absorption of laser light in a wavelength region of 100 nm to 4 nm.

率之樹脂(絕緣樹脂13),或雷射L之焦點深度充分,故/即使雷射L ,焦點位置Y繼偏離亦充分足以進行雷射加工。在此,設定雷 大致在凸狀體仏之傾斜面说長度之間,俾電路 凸狀體13a傾斜面13b全長良好地形成。雷射焦點位 置Y可叹疋於低於凸狀體13a基部之位置,亦 體13a上表® 13(1之位置。 ,又疋於同於凸狀 [0102] [材料之說明] (絕緣基材) 體曰材11,可不特別限定使用自以往如用於安褒半導 舉=列無機基材。作為有機基材之具體例,可 脂氧樹脂、丙婦酸樹脂、聚碳酸脂樹 =井樹脂、雙聚本嘯1、_旨樹脂、苯 種有樹ί要=成例ί可使用,造電路基板之各 者:雙紛Α型環氧樹月:雔Ί別限,。具體而言可舉出例如下列 芳烷環_脂、苯紛^·^ ϋ氧樹脂、雙齡S型環氧樹脂、 與具有紛系氧樹脂、二環戍二稀型環氧樹月旨、_ 縮水甘油i 之縮合物之環氧化物、三聚異氰^員 化或鱗變性之氧=等。且為賦予阻燃性,亦可舉出ί =『使I切可組合日,含有_。此等樹脂 以此等樹脂構成絕緣基材11時,為使樹脂硬化’―般使用硬 28 201247056 胺?: 體,言:舉出例如二氰二 氰酸酯樹脂等。 、刎、私基二氮雜苯紛酸類硬化劑、 [0105] 作為酌類硬化劑,可與山/丨, 且為賦予阻燃性,亦可、芳貌型、輯型等。 ;此等硬化劑可單獨使用&amp;^=旨種= 用之編樹 形成電!案形成她雷射加工 脂等。具體而古,吸收率(uv吸收率)優異之樹 [0107] 了舉出例如聚醯亞胺樹脂等。 於絕緣基材11亦可含有填料 =_絲子,_峨。齡含 分露ώ,以填料之凹凸提升絕絲材11與紐膜17 [0108] =為構成無機微粒子之材料,具體而言,例如可舉訂列者: -tu/Lt(Al203)、氧化鎂(Mg〇)、氮化蝴㈣、氮化銘(Α1Ν)、 ^ ;碎(ι〇2)、鈦酸鋇(BaTi〇3)、氧化鈦(Ti〇2)等高介電常數填充 硬磁等磁性填充材; 氫氧化鎂(Mg(〇H)2)、氫氧化鋁(A1(〇H)2)、三氧化録(Sb2〇3)、 =化=Sb205)、胍鹽、硼酸鋅、翻化合⑯、錫酸鋅等無機類阻 :石(Mg3(Si4O10)(〇H)2)、硫酸鋇(pas〇4)、礙酸妈(cac〇3)、 宴母等。 可單獨使用此等無機微粒子或亦可組合2種以上使用。 [0109] 29 201247056 岛二匕Ϊ無巧粒子熱傳導性、介電常數、阻燃性、粒度分布、 人由度等高’故選擇性地使所希望之功能發揮時,可適當進 及減料料妨純統。 〇.〇===無特別限定,但宜為例如⑽1叫〜10μιη, [0111] 硎邑緣基材11中提高分散性,無機微粒子亦可以石夕烷偶合 理。且為提高無機微粒子於絕緣基材11中之分散性,絕 辦二亦含有石夕院偶合劑。作為石夕烧偶合劑無特別限定。具 類i萁:二?例如下列矽烷偶合劑等:環氧矽烷類、酼基矽烷 窗其ti/烧類、乙歸基石夕烧類、苯乙烯基石夕烧類、曱基丙烯臨 劑$辈二貝闲醯氧基矽烷類、鈦酸酯系類等。此等矽烷偶合 giLt獨使用或亦可組合2種以上使用。 亦可ii雙ίΐ機微粒子於絕緣基材11中之分散性,絕緣基材11 出烧“Hi作為分散劑無特別限^。具體而言,例如可舉 i 類、絲聚醚胺類、高分子類等分散劑 [υγ刀政劑可早獨使用或亦可組合2種以上使用。 子等y作為填料使用之有機微粒子具體射例如可舉出橡膠微粒 [0114] 薄膜作11之祕無_限定。具體而言,可舉出薄片、 ΐϊ、/ϋ三維形狀成形體等。絕緣基材η之厚度亦益特別 限疋。例如係薄片、薄膜、預浸妒笨— 』特別 =’ 目當理想,、想__ 置入,加赢,使^it使^模等將成為絕緣基材之材料 定/、吏化錯此形成為三維形狀之成形體等,亦可 201247056 . 使薄片、薄膜、預浸體經沖裁、秒捐去成儿 其硬化,藉此形成為三維形m更化’或*以加熱加顧 [0116] (絕緣樹脂) 有機與構 係以蒸餘衫顧之,亦可 使無機材料多層戶斤構成之絕緣性^料或是混合或 用絕緣樹麻代之㈣二⑸亦可絲況,不使 機材料等。 石夕(Sl〇2)專為首之陶竞等絕緣性無 [0117] (樹脂膜) 作為用來形成樹脂臈14之材料,口 或膨潤去除之樹4V即==用膜= ,膨潤度高呵藉由膨潤剝離之樹脂。植麻’或對既定液 L^Jl 18] iv丄丄yj 或更生樹宜係如對既定液體膨潤度在5〇%以上, 樹脂之具體^列如^至中在500%以上之膨潤性樹脂。作為如此 :而調整成所希望之化度 :膠、㈣酸_共聚物等類丁:=== [0120] (電鍍觸媒) 電解僅於欲形成無電解電鏟膜17之部分形成盔 电锻膜Π而預先賦予之觸媒。作為電鍍觸媒16,只要是^ 31 201247056 在作為無電解電鍍用觸媒使用者,可田 不使用電_媒16,代之以包覆使t °且亦可 _、= _媒16之_,例如可舉出金屬 [0121] 、 16包覆之方法’可舉㈣如以在_〜3之酸 方Πίΐ之酸tPd_Sn膠體溶液處理後,以酸溶液處理之 ίϊ成ίίΐ 如下列之方法。首先,將於在⑼電路圖 ==所軸之f路_15表面崎之油分等以界面活性劑 劑)等熱水沖洗之。其次,因應所需以過硫酸納-硫 酉夂類軟钮刻劑進行軟颠刻處理。又,爭力 =^溶液等酸性溶液中進行酸洗。其次,浸潰 、主ίΐίΐ水溶料為域分之職較氣化残吸附後,更浸 3與S化鈀之pH1〜3之酸㈣η膠體等酸性觸 ,金屬膠體讀巾’獻使pd及Sn凝聚並韻。又,在吸附之 虱化亞錫與氯化鈀之間引起氧化還原反應 =i+Pdcl2—SnCl4+P(U)。藉此析出係電鑛觸媒16之金屬鈀(pf a又’作為酸性觸媒金屬膠體溶》夜,可使用習知之酸性pd_Sn 秦,觸媒溶液等’亦可使__媒金麟液之市隹電 。如此之製程例如由羅門哈斯電子材料公司系統化而販賣。 (無電解電鍍) ' 作為於(G)電鍍獅齡驟進行之無鱗電鍍方法,可使用如 將電鐘觸媒16包覆之電鐘對象物浸潰於無電解電鍍液槽 解電鍍膜17僅於電鍍觸媒16包覆之部分析出之 … [0124] 丨 作為用於無電解電狀金屬,可舉$銅(Cu)、鎳⑽ 、 在呂(A1)等。於此等者中,以Cu為主成分之電鐘膜因導電性優異之 .特點故相當理想。且包含Ni時因_嫩或與焊料之密接性優異之 32 201247056 特點故相當理想。 [0125] ,鍍膜17之膜厚無特別限定。具體而言例如宜為〇 i m, 約1〜5μιη則更佳。 [0126] 法 如說明,本發日祕—種對立體構造物的表Φ之配線方 弘含β 驟,於絕緣基材表面藉由絕緣樹脂形成凸狀體; ϋΞΐίϊϊ,於凸狀體表面及絕緣基材表面形成樹脂膜; 麵厚度,呈所希望之形狀及深度之_及_ = 面及’令電鍍觸或其細_電路圖案表 樹脂膜去除步驟,去除樹脂膜;及 縮據ϊΐϊ?成步驟,僅於電鍍觸媒或由其前驅物所形成之電鐘 觸媒的殘留部位形成無電解電鍍膜; 雷The rate of the resin (insulating resin 13), or the depth of the focus of the laser L is sufficient, so even if the laser L, the focus position Y is deviated sufficiently to perform laser processing. Here, the setting of the lightning is substantially between the lengths of the inclined surfaces of the convex body 俾, and the entire length of the inclined surface 13b of the 俾 circuit convex body 13a is well formed. The laser focus position Y can be sighed below the base of the convex body 13a, and the body 13a is on the surface of the table 13 (1), and is also the same as the convex shape [0102] [Description of the material] (insulation base) The material coffin 11 can be used without particular limitation, such as for use in an ampoule semi-conductive = column inorganic substrate. As a specific example of the organic substrate, a lipoxy resin, a propylene glycol resin, a polycarbonate tree = Well resin, double-polymerized whistle 1, _ resin, benzene type tree ί want = example ί can be used, the circuit board is made up of: double Α type epoxy tree month: 雔Ί 雔Ί limit, specific For example, the following aralkyl ring-lips, benzenes, oxime resins, double-aged S-type epoxy resins, and various oxygen-based resins, bicyclic fluorene-type epoxy trees, _ shrinkage The epoxide of the condensate of glycerol i, the oxygen of the trimeric isocyanate or the squamous degeneration, etc., and the flame retardancy, ί = "I can combine the day and contain _. When the resin is used to form the insulating base material 11 with such a resin, in order to harden the resin, a hard 28 201247056 amine is used. For example, a dicyanodic acid cyanide resin or the like is used. A sulphur-based benzophenic acid hardener, [0105] as a discretionary hardener, which can be combined with a mountain, a flame retardant, an aromatic form, a type, etc.; Use &amp;^=species alone = use the tree to form electricity! The case forms her laser processing grease, etc.. Concretely, the absorption rate (uv absorption rate) is excellent. [0107] For example, polyimine Resin or the like. The insulating substrate 11 may also contain a filler = _ silk, _ 峨. The age contains a dew point, and the concavity and convexity of the filler 11 and the new film 17 [0108] = a material constituting the inorganic fine particles, Specifically, for example, it can be cited as: -tu/Lt (Al203), magnesium oxide (Mg〇), nitrided butterfly (four), nitrided (Α1Ν), ^; crushed (ι〇2), barium titanate High dielectric constant such as (BaTi〇3) and titanium oxide (Ti〇2) filled with magnetic filler such as hard magnetic material; magnesium hydroxide (Mg(〇H)2), aluminum hydroxide (A1(〇H)2), Inorganic resistance such as trioxide (Sb2〇3), ===Sb205), strontium salt, zinc borate, phosphating hexate, zinc stannate, etc.: stone (Mg3(Si4O10)(〇H)2), barium sulfate (pas) 〇 4), obstructive mother (cac〇3), banquet mother, etc. These inorganic fine particles may be used singly or in combination of two or more. 29 201247056 The inconsistency of the island's innocent particles, such as thermal conductivity, dielectric constant, flame retardancy, particle size distribution, and humanity, so that when the desired function is selectively exerted, the material can be appropriately reduced and reduced. It is pure. 〇.〇=== is not particularly limited, but is preferably, for example, (10) 1 is called 1010 μm, and the dispersibility is improved in the rim substrate 11, and the inorganic fine particles may be cyclized. Further, in order to improve the dispersibility of the inorganic fine particles in the insulating base material 11, the second embodiment also contains a Shi Xiyuan coupling agent. The Shi Xi siu coupling agent is not particularly limited. With class i萁: two? For example, the following decane coupling agents, etc.: epoxy decane, decyl decane window, ti/burning, ethyl ruthenium sulphate, styrene based sulphur, sulphur-based propylene, sulphide Classes, titanates, etc. These decane couplings may be used giLt alone or in combination of two or more. Further, the dispersibility of the fine particles in the insulating substrate 11 and the insulating substrate 11 are burned. "Hi is not particularly limited as a dispersing agent. Specifically, for example, a class I, a silk polyetheramine, and a high A dispersing agent such as a molecule may be used alone or in combination of two or more kinds. The organic fine particles used as a filler may be exemplified by rubber particles [0114]. Specifically, a sheet, a crucible, a crucible, a crucible, a three-dimensional shape molded body, etc. The thickness of the insulating base material η is also particularly limited. For example, a sheet, a film, a prepreg, and the like - "Special = ' Ideally, I want to __ put in, win, and make ^it, etc., which will become the material of the insulating substrate, and the molded body formed into a three-dimensional shape, etc., may also be 201247056. The prepreg is punched out, and the second is donated to the child to harden it, thereby forming a three-dimensional shape, m or the like, or heating to add [0116] (insulating resin) organic and structural system to steam the shirt, It is also possible to make the insulating material of the multi-layered inorganic material or mix or use the insulating tree to replace it (4) (5) It can also be used in silk condition, without making machine materials, etc. Shi Xi (Sl〇2) is specially used for the first time, such as Tao Jing, etc. [0117] (resin film) As the material used to form the resin crucible 14, the mouth or swelling is removed. Tree 4V ===With film=, the degree of swelling is high, and the resin is peeled off by swelling. The planting is 'or for the established liquid L^Jl 18] iv丄丄yj or the tree should be like the liquid swelling degree of the given liquid is 5〇 % or more, the specific resin of the resin is, for example, 500% or more of the swellable resin. As such: it is adjusted to a desired degree: gelatin, (tetra) acid copolymer, etc.: === [0120] (Electroplating Catalyst) Electrolysis is a catalyst that is previously applied to the portion of the electroless shovel film 17 to form a helmet forging film. As the plating catalyst 16, as long as it is ^ 31 201247056, it is used as a catalyst for electroless plating. The user can use the electric medium 16 instead of the electric medium. Instead, the coating can be made to t ° and _, = _ medium 16 _, for example, the metal [0121], 16 coating method can be mentioned (four) For example, after treating with the acid solution of _~3 acid Π ΐ ΐ acid tPd_Sn, the solution treated with acid solution is ίίΐ as follows. First, it will be in (9) circuit == The shaft of the shaft _15 surface is oily and soaked with a hot metal such as a surfactant.) Secondly, the soft etch treatment is carried out with a sodium-sulfur sulphate soft button engraving agent. In addition, the acid solution such as the solution = ^ solution is pickled. Secondly, the dipping, the main ΐ ΐ water solute is the domain of the job, after the gasification residual adsorption, the immersion 3 and S palladium pH 1~3 acid (four) η Acidic contact such as colloid, metal colloidal towel "provides pd and Sn to agglomerate and rhyme. In addition, it causes redox reaction between adsorbed stannous and stannous chloride = i + Pdcl2 - SnCl4 + P (U). In this way, the metal palladium of the electrocatalyst catalyst 16 is precipitated (pf a and 'as the acid catalyst metal colloid dissolved in the night'), and the conventional acidic pd_Sn Qin, catalyst solution, etc. can be used to make the __media Jinlin liquid Such a process is, for example, systematically sold by Rohm and Haas Electronic Materials Co., Ltd. (electroless plating) ' As a method for electroplating of (G) electroplating lions, it can be used as a catalyst. 16 coated electric clock object is immersed in the electroless plating bath. The plating film 17 is only analyzed in the portion coated with the plating catalyst 16 [0124] 丨 is used for the electroless metal, for example Copper (Cu), nickel (10), and Lu (A1), etc. Among them, the electric clock film containing Cu as a main component is excellent in conductivity, and is preferable because it contains Ni. The adhesiveness of the solder is excellent. The thickness of the coating film 17 is not particularly limited. Specifically, for example, it is preferably 〇im, preferably about 1 to 5 μm. [0126] This issue of the Japanese secret - the type of the three-dimensional structure of the table Φ wiring Fang Hong contains β, on the surface of the insulating substrate by The edge resin forms a convex body; ϋΞΐίϊϊ, a resin film is formed on the surface of the convex body and the surface of the insulating substrate; the thickness of the surface is in a desired shape and depth _ and _ = surface and 'the plating contact or its fine _ circuit pattern a resin film removing step, removing the resin film; and a shrinking step, forming an electroless plating film only on the plating catalyst or a residual portion of the electric clock catalyst formed by the precursor;

射 [0127] 構本__趨縣自物收靖_的中間 絕緣基材;及 凸狀體,於絕緣基材表面藉由絕緣樹脂形成; 該凸紐具#減於崎基材表面爾之傾斜面。 ^用以獲得表面設有配線之立體構造物的中 更包含於凸㈣絲及麟基材表㈣可去除之方式碱之U 之傾形成麵,形成具有姆魏·材表面傾斜 於該電路圖案形成步驟,朝絕緣基材表面沿垂直方向照射 33 201247056 膜。 [0129] 且本發明係一種對立體構造物的表面之配線方法,包含: 絕緣樹脂層形成步驟,於絕緣基材表面藉由絕緣樹 句 含凸狀體之絕緣樹脂層; 氐u 樹脂臈形成步驟,於絕緣樹脂層表面形成樹脂膜; 電路圖案形成步驟’藉由自外表關進行雷射加工,形 賴厚度,綺^之雜及深紅溝觀/或孔,形成 面及频,令__或其_物包覆電路圖案表 樹脂臈去除步驟,去除樹脂膜;及[0127] constituting the intermediate insulating substrate of the __ ̄ county self-contained _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Inclined surface. ^In order to obtain a three-dimensional structure having a wiring on the surface, the surface of the convex (four) wire and the surface of the lining substrate (4) can be removed, and the surface of the base of the U can be removed, so that the surface of the material is inclined to the circuit pattern. In the forming step, the film is irradiated 33 in the vertical direction toward the surface of the insulating substrate. [0129] The present invention is a wiring method for a surface of a three-dimensional structure, comprising: an insulating resin layer forming step, an insulating resin layer containing a convex body on an insulating substrate surface by an insulating tree; 氐u resin 臈 formation a step of forming a resin film on the surface of the insulating resin layer; the circuit pattern forming step 'by performing laser processing from the outer surface, depending on the thickness, the impurity and the deep red groove view/or hole, forming the surface and frequency, so that __ Or a material-coated circuit pattern sheet resin 臈 removal step to remove the resin film;

舰彡成轉’僅於輪觸媒或由其前,錄所形成之電鍍 觸媒的殘留部位形成無電解電鍍膜; X 細旨獅齡驟’形成包含射崎於絕緣基材 表面傾斜之傾斜面之凸狀體之絕緣樹脂層, 於錢路随形成步驟,她緣紐表面沿垂直方向照 射。 [0130] 構造^本t係—翻以獲得表面設有配狀立麟造物的中間 絕緣基材;及 狀體邑緣納θ層’包含於絕絲材表面藉由絕緣樹颜形成之凸 [0131^該凸狀體具有姆魏緣基材表面傾斜之傾斜面。 更包Γ有配叙謂構造物財間躲物中亦可 於猶概層表面以可去n切紅樹脂膜。 該用以獲得表面設有配線之立體構造物財間構造物中宜於 34 201247056 凸狀綾S緣樹脂呈凸狀成形;且/或 材丧面傾將絲於絕緣基材,具有或不具有減於絕緣基 斜蚊電子構件加以髓,藉此形成。 爐侏^獲?表面設有配線之立體構造物的巾間構造物中電子 =器:以=搭=疊之複數半输日片、及/或晶 體傾面設有配線之立體構造物的中間構造物中凸狀 材表細紐絲_叫減於絕緣基 [0135] 崎賴造物中凸狀 法,=發明之其他態樣係一種對立體構造物的表面之配線方 =ί 2 ί$Ξ ’ ί絕緣基材表面藉由絕緣樹脂形成凸狀體; 电路_軸步驟,错由自外表面侧進 職厚度,呈所希望之形__^= 面及卿,馈峨編純娜圖案表 樹月曰膜去除步驟,去除樹脂膜;及 網拔=卿成步驟’僅於魏_或由其前驅物所形成之靜 觸媒的殘留雜形成無電解電麵; 爾械之電鍍 之傾綱,細物姆表面傾斜 於該電路圖_成轉’她縣材表响垂直方向照射雷 35 201247056 射,且朝凸狀體傾斜面照射雷 面的面照射雷射時,使每單位時間的^絕緣基材表 [0137] =:包含·· 含凸狀體之絕緣樹脂層; 、'土材表面藉由絕緣樹脂形成包 SSS驟於;==成樹脂膜; 膜厚度’呈所希-望之形綠二形s 面及樹^膜覆4’令電鍍觸或其_她覆電路圖案表 樹脂膜去除步驟,去除樹脂膜;及 觸媒媒或由其前驅物所形成之電鍍 表面緣樹闕形成步^,、形成包含具有姆於絕緣歸 表面傾斜之傾斜面之凸狀體之絕緣樹脂層,于於‘基材 射,案形成步驟,朝絕緣基材表面沿垂直方向昭射雷 射雷射時,使每單位時晴射之能ίΐΓ 脂呈喊蚊輯方糾錄凸狀咖,絕緣樹 材表面】絕緣基材’具有或不具有相對於絕緣基 [0139] ' 1斜面之電子構件加以被覆,藉此形成。 體晶Ϊ對面之配線方法中電子構件宜係單一半導 等電路搭載^件减半導體晶片、及/或晶片電«或電容器 [0140] 36 201247056 該對立體構化物的表面之配線方法中 使每單位時間的雷射之能量增大。 猎由楗间雷射頻率, [0141] 曰 該對立體構造物的表面之配線方法中可 速度’使每單__魏之歸增大。 L心射之移動 [0142] 該對立體構造物的表面之配線方法 出’使每單位時_雷射之能量增大。雷射之輸 [0143] 該對立體構造物的表面之配線方法中 =焦點位置設定在酬基部附近近 [0145] 體構'-上述對立 [0146] 射=== 圖案。向’僅沿—方向騎,藉此於凸狀體陕地形成電路 [0147] 雷射i依’於凸狀體職傾斜面,且朝凸狀體傾斜面照射 位昧較於朝平行於絕緣基材表面的面照射雷射時,使每單 體射之能量增大,藉此在將配線形成於具有凸狀體之立 向ϊϊί㈣’可不變更雷態雜置或平台之配置位置或方 [0148] /〇方向照射雷射,以在凸狀體良好地形成電路圖案。 37 201247056 以下丄通過實補更具體地綱本發明。又 不因以下實施做雜何限定或被轉。 轉明之I巳圍 [實施例] [0149] (實施例) 分別製作圖7中,(a)為lmm,⑼為觸哗 斜面13b之傾斜角度θ為45。(試驗編號υ、75。(試』$ J = 4)、%。(試驗編號5)之中^造物‘ 節 度20卿之,槽。雷射自凸狀體13a上方沿垂直 S面之方向照射,並同時沿平行於絕緣基材11表 iiir動。又’使用顯微鏡觀察形成於傾斜面i3b之溝槽, i雷射1準Γΐ之。將結果併入表1表示。又,進行實施例記載 之雷射加工㈠,使用具有U^YAG雷射 MODEL5330。 % &lt;以丄a岣泉之 [0150] (評價基準) x:完全斷線處有一處以上。 △ 未引起斷線,但傾斜面13b溝槽之寬度未滿15μιη。 18μιη〇。·未引起斷線,傾斜面13b溝槽之寬度在ι5μιη以上,未滿 、◎.未弓丨起斷線,傾斜面13b溝槽之寬度在18μπι 以上,20μιη 以下。 [0151] [表1] 38 201247056The ship is turned into a non-electrolytic plating film formed only by the wheel catalyst or by the front part of the plating catalyst formed by the recording; X is the purpose of forming the slanting inclination of the surface of the insulating substrate The insulating resin layer of the convex surface of the surface is irradiated with the surface of the edge of the gold in the vertical direction. [0130] The structure is t-turned to obtain an intermediate insulating substrate having a matching lining material on the surface; and the θ layer of the ridge body of the ridge is included in the surface of the swarf material by the insulating tree body. 0131^ The convex body has an inclined surface with a tilted surface of the substrate. In addition, there is a description of the structure of the material, and the object can also be used to cut the red resin film on the surface of the layer. The three-dimensional structure for the surface to be provided with wiring is suitable for the 34 201247056 convex 绫 S edge resin is convexly formed; and/or the material surface is inclined to the insulating substrate, with or without Subtracted from the insulating base of the electronic components of the parasitic mosquito to form the marrow. The inside of the furnace is provided with an interconnected structure in which the three-dimensional structure of the wiring is provided. The electrons are: the middle of the three-dimensional structure of the stack, and/or the three-dimensional structure of the crystal inclined surface. In the structure, the convex material of the convex material is reduced to the insulating base [0135]. The convex method of the sacred fabric, = the other aspect of the invention is the wiring of the surface of the three-dimensional structure = ί 2 ί$Ξ ' ί Insulation substrate surface is formed by insulating resin to form a convex body; Circuit _ Axis step, wrong from the outer surface side to enter the thickness, in the desired shape __^= face and Qing, feed 峨 pure na pattern table The step of removing the resin film from the tree decimating film; and removing the resin film from the step of removing the net; and forming the electroless electric surface only by the residual impurities of the static catalyst formed by the Wei or the precursor; The surface of the fine object is inclined to the circuit diagram _ into the turn of her county material sheet in the vertical direction to illuminate the thunder 35 201247056, and the surface of the convex surface is irradiated with the surface of the convex surface to illuminate the laser, so that the insulation per unit time Substrate table [0137] =: contains · · Insulating resin layer containing convex body; , ' soil surface by insulating resin SSS is formed in the package; == into a resin film; the film thickness is in the form of a green-shaped s surface and a tree-coated film 4' to make a plating contact or a resin film removal step thereof. Removing the resin film; and forming a step of forming the plating surface of the catalyst medium or the precursor formed by the precursor, forming an insulating resin layer including a convex body having an inclined surface inclined to the surface of the insulating surface, The substrate is shot, and the case is formed. When the laser is irradiated in the vertical direction toward the surface of the insulating substrate, the energy of the clearing of each unit is squeaky, and the surface of the insulating tree is etched. The insulating substrate 'is formed with or without an electronic member with respect to the insulating substrate [0139] '1 slope. In the wiring method opposite to the body wafer, the electronic component should be a single-half-conducting circuit, such as a semiconductor wafer, and/or a wafer, or a capacitor [0140] 36 201247056 The wiring method of the surface of the pair of steric structures is The energy of the laser per unit time increases. Hunting by the laser frequency between the turns, [0141] 可 The speed of the wiring method of the surface of the pair of stereoscopic structures is increased by __wei. L-Imprint Movement [0142] The method of wiring the surface of the pair of three-dimensional structures is to increase the energy per unit time_laser. Laser transmission [0143] In the wiring method of the surface of the pair of three-dimensional structures, the focus position is set near the base portion [0145] the body configuration - the above-mentioned opposite [0146] shot === pattern. Ride to 'only along the direction—to form a circuit in the convex body [0147] The laser i is inclined to the convex body, and the inclined surface toward the convex body is located parallel to the insulation. When the surface of the surface of the substrate is irradiated with a laser, the energy per shot is increased, whereby the wiring is formed in the vertical direction with the convex body (4) 'the position or side of the configuration where the lightning state is not changed or the platform is not changed [ 0148] The laser is irradiated in the /〇 direction to form a circuit pattern well in the convex body. 37 201247056 The following is a more specific summary of the invention. It is not limited or transferred due to the following implementation. EMBODIMENT OF THE INVENTION [Embodiment] [Examples] In Fig. 7, respectively, (a) is 1 mm, and (9) is the inclination angle θ of the contact inclined surface 13b of 45. (Test No. υ, 75. (Try) $ J = 4), %. (Test No. 5). ^Creation' Degree 20, the groove. The laser is irradiated from the convex body 13a above the vertical S surface. At the same time, it moves along the table iiir parallel to the insulating substrate 11. Further, the groove formed on the inclined surface i3b is observed by a microscope, and the laser is applied to the surface. The results are shown in Table 1. Further, the embodiment is described. Laser processing (1), using U^YAG laser MODEL530. % &lt; 丄a岣泉[0150] (evaluation basis) x: There is more than one point at the complete disconnection. △ No disconnection, but inclined surface The width of the 13b groove is less than 15μηη. 18μιη〇··There is no wire breakage, the width of the groove of the inclined surface 13b is above ι5μιη, not full, ◎.The wire is not broken, and the width of the groove of the inclined surface 13b is 18μπι Above, 20μηη or less. [0151] [Table 1] 38 201247056

[0152] 如表1之結果所明示,藉由使凸狀體1Sa側面 材11表面非垂直而係傾斜,可不變更雷&amp; 、;、’緣土 办苗斗、七Αj个文更番射照射裝置或平台之配置 位置或方向,僅沿一方向照射雷射,藉 置 評價結果 f下時_當優雕_吵且傾^^度^:^ 時,結果更為優異(試驗編號1、2)。 [0153] (實施例2) 傾斜 iii 多 7 ’(a)為lnun ’(b)為,(c)為6一’ ==13b之傾^度Θ為45。之中間構造物說之試麵脂膜 未巧)。又,就各試料,使用UV-YAG雷射(波長355㈣,以表 所不之雷射照射條件,自絕緣基材11表面橫跨凸狀體13a 乃至於凸狀體13a之上表面13d連續等間隔地形成 二條寬度20μιη之溝槽。雷射自凸狀體13a上方沿垂直於絕緣基 材11表面之方向照射,並同時沿平行於絕緣基材u表面之方向 移動又,使用顯微鏡觀察形成於傾斜面13b之溝槽,以下列基 準評價之。將結果併入表2〜表4表示。 [0154] 39 201247056 (評價基準) Χ:完全斷線處有一處以上。 △·雖未引起斷線,但傾斜面13b溝槽之寬度未滿15_。 18μιη 〇 ·未卩丨起斷線’傾斜面13b溝槽之寬度在15μιη以上,未滿 以下 [0155] ◎•未W起斷線’傾斜面13b溝槽之寬度在18μπι以上,2〇吨 -—-- 試驗編號 傾斜角度(。) ------ 6 7 8 9 10 45 焦點偏離(mm) 0.35 -- 頻率(Hz) 30 40 50 60 70 輸出(W) 0.3 — 加工速度(nun/秒) 150 _ 重複數 ---- 1 評價結果 ΓΠ1 Vi X Δ 〇 ◎ ◎ [表3]As is clear from the results of Table 1, the surface of the side material 11 of the convex body 1Sa is inclined without being perpendicular, and it is possible to change the thunder &amp; The position or direction of the irradiation device or the platform is irradiated only in one direction, and when the evaluation result f is used, the result is more excellent when the evaluation result f is arbitrarily and the degree is ^^^^ (test number 1, 2). (Example 2) Inclination iii is more than 7' (a) is lnun' (b) is (c) is 6'' ==13b, and the degree of inclination Θ is 45. The middle structure says that the test film is unsatisfactory). Further, for each sample, a UV-YAG laser (wavelength 355 (4) was used, and the surface of the insulating substrate 11 was traversed from the convex body 13a or the upper surface 13d of the convex body 13a in a laser irradiation condition. Two grooves having a width of 20 μm are formed at intervals. The laser is irradiated from above the convex body 13a in a direction perpendicular to the surface of the insulating substrate 11, and simultaneously moves in a direction parallel to the surface of the insulating substrate u, and is formed by using a microscope. The groove of the inclined surface 13b was evaluated on the following basis. The results are shown in Tables 2 to 4. [0154] 39 201247056 (Evaluation Criteria) Χ: There is one or more points at the complete disconnection. However, the width of the groove of the inclined surface 13b is less than 15 mm. 18μιη 〇·The line is not broken. The width of the groove of the inclined surface 13b is 15 μm or more, less than the following [0155] ◎•The line is not broken. The width of the 13b groove is above 18μπι, 2〇 tons---- Test number tilt angle (.) ------ 6 7 8 9 10 45 Focus deviation (mm) 0.35 -- Frequency (Hz) 30 40 50 60 70 Output (W) 0.3 — Processing speed (nun/sec) 150 _ Complex ---- 1 rating results ΓΠ1 Vi X Δ square ◎ ◎ [Table 3]

試驗編號 ---—____ 傾斜角度(。) 焦點偏離(_) 頻率(Hz) 輪出(W) 40 201247056 加工速度(mm/秒) 120 130 140 150 160 重複數 1 評價結果 ◎ ◎ 0 Δ X [0157] 「[表 4] 式驗編號 16 17 18 19 20 傾斜角度(。) 45 焦點偏離(mm) 0.35 頻率(Hz) 60 輸出(W) 0.25 0.3 0.35 0.4 0.5 加工速度(mm/秒) 150 重複數 1 評價結果 X Δ 〇 ◎ ◎ [0158] 如表2之結果所明示,雷射頻率愈高,愈可不變更雷射照射 裝置或平台之配置位置或方向,僅沿一方向照射雷射,藉此於凸 .狀體13a之傾斜面13b良好地形成溝槽(試驗編號7〜10)。特別是’ 頻率在50Hz以上時,結果相當優異(試驗編號8〜1〇)。且頻率在 60Hz以上時,結果更為優異(試驗編號9、1〇)。 [0159] ^如表3之結果所明示,雷射加工速度愈慢,愈可不變更雷射 照射裴置或平台之配置位置或方向,僅沿一方向照射雷射,藉此 於^狀體13a之傾斜面13b良好地形成溝槽(試驗編號1W4)。特 別是加工速度在140mm/秒以下時結果相當優異(試驗編號 11 13)。且加工逮度在130mm/秒以下時結果更為優異(試驗編號 41 201247056 11 &gt; 12) 〇 [0160] 裝置方:,高,愈可不變更雷射照射 詩1位置或方向’僅沿—方向照射雷射,藉此於凸 輪出在13b良好地形成溝槽(試驗編號17〜2〇)。特別是, 〇】4W以卜技J上時結果相當優異(試驗編號18〜2〇)。且輸出在 =;]以上時結果更為優異(試驗編號19、2〇)。 稱複數於圖7,⑷為lmm ’(b)為⑽,,⑻為6_,Test No.----____ Tilt angle (.) Focus deviation (_) Frequency (Hz) Round-off (W) 40 201247056 Processing speed (mm/sec) 120 130 140 150 160 Repeat number 1 Evaluation result ◎ ◎ 0 Δ X [[Table 4] Test No. 16 17 18 19 20 Tilt angle (.) 45 Focus deviation (mm) 0.35 Frequency (Hz) 60 Output (W) 0.25 0.3 0.35 0.4 0.5 Processing speed (mm/sec) 150 Repeating number 1 Evaluation result X Δ 〇 ◎ ◎ [0158] As shown by the results of Table 2, the higher the laser frequency, the more the position or direction of the laser irradiation device or the platform can be changed, and the laser is irradiated only in one direction. Thereby, the groove was formed favorably on the inclined surface 13b of the convex body 13a (test Nos. 7 to 10). In particular, when the frequency was 50 Hz or more, the result was excellent (test No. 8 to 1 〇), and the frequency was 60 Hz. The above results are more excellent (test No. 9, 1〇). [0159] As shown by the results of Table 3, the slower the laser processing speed, the more the position or direction of the laser irradiation device or the platform can be changed. , irradiating the laser only in one direction, thereby forming the body 13a The inclined surface 13b is well formed with a groove (test No. 1W4). Particularly, when the processing speed is 140 mm/sec or less, the result is quite excellent (test No. 11 13), and the processing accuracy is 130 mm/sec or less, and the result is more excellent (testing) No. 41 201247056 11 &gt; 12) 〇[0160] Device side:, high, the more you can change the laser irradiation poem 1 position or direction 'only the direction of the laser, so that the cam is well formed at 13b (Test No. 17~2〇). In particular, 4] 4W is quite excellent when it is used on the technique J (test No. 18~2〇), and the output is more excellent when it is above =;] (test No. 19, 2〇). The plural is shown in Figure 7, (4) is lmm '(b) is (10), and (8) is 6_,

夫二杰、之巧斜^度θ為7G。之中間構造物之試料(樹脂膜 ^,就各试料,與試驗編號6〜20相同,使用UY-YAG iH:!所示之雷射照射條件,自絕緣基材11表面橫跨凸狀 之傾斜面l3b乃至於凸狀體13a之上表面i3d連續等間隔 絕之溝槽。雷射自凸狀體i3a上方沿垂直於 照射,並同時沿平行於絕緣基材11表面 ^夕動。又,使用顯微鏡觀察形成於傾13 該基準評價之。將結果併入表5表示。 ,苒匕以 [0162] [表5] 試驗編號 21 22 23 24 -----~ 25 傾斜角度(。) 70 ----- J ---— 焦點偏離(mm) 0.35 ~ 頻率(Hz) ---—^ 60 輸出(W) 0.3 加工速度(mm/秒) 100 110 120 130 140 重複數 — 1 評價結果 ◎ ◎ 0 Δ X -----— 42 201247056 [0163] 如比較表3結果與表5結果而明顯得知者,凸狀體i3a之傾 斜面13b之傾斜角度Θ愈大,愈藉由使每單位時間的雷射之能量 更增大(藉由使雷射加工速度更慢),即使傾斜角度Θ自45。增大至 70°,亦可經常於凸狀體13a之傾斜面13b良好地形成溝槽(試驗編 號21〜24)。 [0164] 本申請案係以2010年11月5日所申請之曰本國專利申請案 特願2010-248925及特願2010-248936為基礎,其内容包含於本申 請案。 、 [0165] 為表達本發明,於前述雖參照圖式並同時通過實施形態適當 且充分地說明本發明,但吾人應理解只要是熟悉該技藝者均可輕 易變更且/或改良前述實施形態。因此,熟悉該技藝者實施之變更 形態或改良形態只要非脫離請求範圍所記载之請求頃之權利範圍 之程度者’該變更職或紐㈣態均應轉為包括於該請求項 之權利範圍。 (產業上利用性) [0166] 氣、電子領域帽於電路形成之技術躺内具有 廣辄之產菓上可利用性。 【圖式簡單說明】 配』1(G)係用來說明依本發明第1及第3實施形態之 配線方法的步驟之剖面圖。 执有第1及第1 2實施職之配線方法所獲得,表面 s 又有配線之立體構造物之1例之俯視圖。 43 1 4 2 圖4(A)〜圖4(D)係用來顯示凸狀體各種構造之剖面圖。 201247056 圖5係用來顯示凸狀體另一構造之剖面圖。 圖6係用來顯示凸狀體又一構造之剖面圖。 圖7係用來顯示凸狀體各部規格之剖面圖。 【主要元件符號說明】 a. ..立體構造物之長度或是寬度 b. ..凸狀體基部之長度或是寬度 c. ..凸狀體之向度 L...雷射(雷射束) m...焦點偏離 X. ..雷射照射裝置 Y. ..雷射焦點位置 Z. ..角隅部 0...傾斜角度 10.. .立體構造物 10A、10B...中間構造物 11.. .絕緣基材(電路基板) 11a...絕緣基材之連接端子 12.. .半導體晶片 12a...半導體晶片之連接端子 13.. .絕緣樹脂 13a...凸狀體 13b...凸狀體之傾斜面 13c...絕緣樹脂層 13d...凸狀體上表面 14.. .樹脂膜 15.. .電路圖案 16.. .電鍍觸媒 17.. .配線(無電解電鍍膜) 18.. .封裝樹脂 44 201247056 19·..電路搭載元件 20...多層電路基板(堆疊晶片) 20a...電路基板之連接端子 20b.··連絡配線(再配線) 45The second singer, the slanting degree θ is 7G. The sample of the intermediate structure (resin film) was the same as Test Nos. 6 to 20, and the laser irradiation conditions indicated by UY-YAG iH:! were used to straddle the surface of the insulating substrate 11 from the convex shape. The inclined surface l3b is evenly spaced apart from the upper surface i3d of the convex body 13a. The laser is perpendicular to the upper surface of the convex body i3a and is parallel to the surface of the insulating substrate 11. The microscopic observation was made on the basis of the evaluation of the reference. The results are shown in Table 5. The results are shown in Table 5. [0162] [Table 5] Test No. 21 22 23 24 -----~ 25 Tilt angle (.) 70 ----- J ---— Focus deviation (mm) 0.35 ~ Frequency (Hz) ---—^ 60 Output (W) 0.3 Processing speed (mm/sec) 100 110 120 130 140 Repeat number — 1 Evaluation result ◎ ◎ 0 Δ X ----- 42 201247056 [0163] As is apparent from comparing the results of Table 3 with the results of Table 5, the inclination angle of the inclined surface 13b of the convex body i3a is increased, and the more The energy per unit time of the laser is increased (by making the laser processing slower), even if the tilt angle is increased from 45 to 70°, Grooves can be formed well on the inclined surface 13b of the convex body 13a (test Nos. 21 to 24). [0164] This application is filed on Nov. 5, 2010. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The above-described embodiments can be easily modified and/or modified by those skilled in the art. Therefore, those skilled in the art can change the scope of the claims or the modified forms as described in the claims. The change of position or the state of the new (four) shall be transferred to the scope of the right to be included in the claim. (Industrial use) [0166] The gas and electronic field caps are widely used in the technology of circuit formation. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(G) is a cross-sectional view showing the steps of the wiring method according to the first and third embodiments of the present invention. Obtained, surface s A plan view of one example of a three-dimensional structure having wiring. 43 1 4 2 Fig. 4(A) to Fig. 4(D) are sectional views showing various structures of a convex body. 201247056 Fig. 5 is a view showing a convex body Fig. 6 is a cross-sectional view showing still another structure of the convex body. Fig. 7 is a cross-sectional view showing the specifications of each part of the convex body. [Description of main component symbols] a. .. length or width of the three-dimensional structure b. . . the length or width of the base of the convex body c. .. the convexity of the convex body L... laser (laser) Beam) m... focus deviates from X. .. laser irradiation device Y. . . laser focus position Z. . . angle 0 0... tilt angle 10 .. stereoscopic structures 10A, 10B... Intermediate structure 11. Insulation substrate (circuit board) 11a... Insulation substrate connection terminal 12: Semiconductor wafer 12a... Semiconductor wafer connection terminal 13. Insulation resin 13a...convex The body 13b...the inclined surface 13c of the convex body...the insulating resin layer 13d...the upper surface of the convex body 14.. resin film 15.. circuit pattern 16.. plating catalyst 17.. Wiring (electroless plating film) 18. Packaging resin 44 201247056 19... Circuit mounting component 20... Multi-layer circuit substrate (stacked wafer) 20a... Connection terminal 20b of circuit board. Rewiring) 45

Claims (1)

201247056 七、申請專利範圍: 1.一種對立體構造物的表面之配線方法,包含: 凸狀體形成步驟,藉由絕緣樹脂在絕緣基 電路圖飾成步驟’触自外表面側進行雷射加卫 轉錢呈所較之職與深叙溝槽及/或孔,而形 面及ΞίΙ覆步驟’令電侧媒或其前驅物包覆電路圖案表 树月曰膜去除步驟’去除樹脂膜;及 觸媒=======料㈣魏物卿成之電鏟 射。於該電路_形成步驟,朝絕緣基材表面沿垂直方向照射雷 含:2.一種中間構造物’用以獲得表面設有配線之立體構造物,包 絕緣基材;及 凸狀體’魏緣基材表面藉由絕賴脂形成; 狀體具有相對於絕緣基材表面 3.如申請專利範圍第2項之中 = 表面及絕絲材表面以可錯ft更包含於凸狀體 .種往體構仏物的表面之配線方法,包含. 絕緣樹脂層形成步驟,於絕续其 含凸狀體之絕賴脂層; 緣基·_由輯樹脂形成包 樹脂膜形成步驟,於絕緣樹 _. 度超過樹脂膜厚度,呈所希望之仃^射加工,形成深 電路圖案; 7爿及/木度之溝槽及/或孔,形成 46 201247056 電鍍觸媒包覆步驟,令雷* 面及樹脂膜表面; 又、或刮驅物包覆電路圖案表 樹脂膜去除步驟’去除樹脂獏. 電鍍膜形成步驟,僅於雷 觸媒的殘留部位形成無電解電媒或由其前驅物所形成之電錄 且於該絕緣樹脂層形成步^ 1 表面傾斜之傾斜面之凸狀體 具有相對於絕緣基材 於該電路圖案形成步驟, 射。 月、、、巴緣基材表面沿垂直方向照射雷 含:5.種中間構以物,用以獲得表面設有配線之立體構造物,包 絕緣基材;及 狀體,邑緣树月曰層’包含於絕緣基材表面藉由絕緣樹脂所形成之凸 狀體具有相對於絕絲材 6·如申請專利範圍第5項之中 1竹之^斜面。 樹脂層表面以可絲之枝軸之細旨Ϊ。、’ ^含於絕緣 =中請專利範圍第2項之中間構造物, 該凸狀體的形成方式為: /、甲 以絕緣樹職形為凸狀而構成;及/或 緣樹脂將安襄於絕緣基材並具有或不具有相斜於絕绫其 材表面傾斜之傾斜面的電子構件加以被覆,而形f相對於、、、邑緣基 單-i7導=1範圍上項之中間構造物,其中,該電子構件係 斜面之,頁利範圍第2項之中間構造物’其中’該凸狀體的傾 基材的表緣基材的表面角度為〇°時,相對於該絕緣 ^臟狀體 47 201247056 u·種表面設有配線之立體構造物,藉由如申請專利範 1或4項之對立體構造物的表面之配線方法而獲得。 12·—種對立體構造物的表面之配線方法,包含: ,狀體形成倾,於絕緣基·面藉由樹师成凸狀體. 成步驟,於凸狀體表面及絕緣基材表面形成樹脂臈; 電_案形成步驟’藉由自外表面侧進行雷射加工,形成 賴厚度,呈所輕之雜麵度之溝或孔,形成 面及===㈣,令魏麟或其麵純«路圖案表 樹脂膜去除步驟,去除樹脂膜;及 鍍 咖編物所形成之電 之傾形成步驟,形成具有相對於絕緣基材表面傾斜 於,電路圖案形成步驟,朝絕緣基材表面 :主且朝該凸狀體的傾斜面照射雷射時,相較於朝 材表面的面騎f射時,魅i⑽朝切於絕緣基 13 -種ff彳脚間的f射之能量增大。 .種對立體構&amp;物的表面之配線方法 絕緣樹脂層形成步驟,於絕緣美奸 包含凸狀體之絕賴脂層;緣基㈣表面猎由職樹脂形成 樹脂膜形成_,於絕緣樹 電路圖案形成步驟,# 树月曰膜, 度超過樹賴厚度,呈所希望行雷射加卫,形成深 電路圖案; J /木又之溝槽及/或孔,形成 表面驟’令電錢觸媒或其前驅物包覆電路圖案的 樹脂膜去除步驟,去除樹脂臈;及 電鍍膜形成步驟’僅於雷护總进 觸媒的殘留部位形成無電解電^^或由其則驅物所形成之電鑛 48 201247056 且於該絕緣樹脂層形成步驟,形成 表面傾斜之顯面的凸狀體之絕緣樹t,3具有相對於絕緣基材 於該電路圖案形成步驟,朝絕緣基材表面 射,且朝凸狀體傾斜面照射雷射時,相較於向知、射雷 面的面照射雷射時,使每單位時間的雷射之i量緣基材表 法㈣之配線方 以絕緣樹脂成形為凸狀而構成;及/或 法:申構 體晶片、及/或晶片電感器或電容器等電路搭^件邊之複數半— 法,I2奴肚麟造麵絲之配線方 雷射頻率,使每單位時間的雷射之能量辦大。 法,苴中,12項之對立體構造物的表面之配曰線方 量增;^ 雷射之軸速度,使每單位時_雷射之能 法,ϊί 12項讀立雜補的絲之配線方 大,、巾猎由&amp;向雷射之輪出,使每單位時間的雷射之能量增 法專利範财12項之對立體構造物的表面之配線方 ’辦位時間的 法,圍ΐ u項之對立體構造物的表面之配線方 凸狀其難形成步驟,將該雷射之焦點位置設定在 凸狀體的基挪近之位置與上表爾近的位置之間。 2i. 一種表面設有配線之立體構造物,藉由如第12至20項中 項之對立體構造物的表面之配線方法而獲得。、 49201247056 VII. Patent application scope: 1. A method for wiring the surface of a three-dimensional structure, comprising: a step of forming a convex body, which is decorated by an insulating resin in an insulating circuit diagram step by step from the outer surface side to perform laser protection The transfer of the money is compared to the position and depth of the groove and/or the hole, and the surface and the Ι Ι 步骤 step 'make the electric side medium or its precursor coated circuit pattern table moon 曰 film removal step' to remove the resin film; Catalyst ======= material (four) Wei Shiqing into the electric shovel. In the circuit_forming step, the lightning is irradiated in a vertical direction toward the surface of the insulating substrate: 2. an intermediate structure 'to obtain a three-dimensional structure having wiring on the surface, an insulating substrate; and a convex body' The surface of the substrate is formed by a grease; the shape has a surface relative to the insulating substrate 3. As in the second item of the patent application, the surface and the surface of the wire are more included in the convex body. The wiring method of the surface of the body structure includes: a step of forming an insulating resin layer, and a layer of a perishable layer containing the convex body; a substrate for forming a resin film by the resin, in the insulating tree _ Degree exceeds the thickness of the resin film, and is processed to form a deep circuit pattern; 7 爿 and / / wood grooves and / or holes, forming 46 201247056 plating catalyst coating steps, so that Resin film surface; or, scraper coating circuit pattern table resin film removing step 'Removal of resin 貘. Plating film forming step, forming an electroless dielectric or forming only a precursor thereof only at a residual portion of the thunder catalyst Electric record and the insulating tree Layer is formed of an inclined surface of the step ^ convex surface is tilted with respect to the insulating material forming step in the circuit pattern shot. The surface of the moon, and the edge of the base material is irradiated with lightning in the vertical direction: 5. The intermediate structure is used to obtain a three-dimensional structure with wiring on the surface, and the insulating substrate is wrapped; and the shape, the edge of the tree The layer 'containing a convex body formed of an insulating resin on the surface of the insulating substrate has a beveled surface with respect to the fine wire material 6 as in the fifth item of the patent application. The surface of the resin layer is designed with the purpose of the wire axis. , ^ ^ contained in the insulation = the middle structure of the second paragraph of the patent scope, the convex body is formed in the following manner: /, A is formed by the shape of the insulating tree is convex; and / or the edge resin will be installed An insulating member is coated with or without an electronic member inclined to the inclined surface of the surface of the material, and the intermediate structure of the shape f is relative to the range of the single-i7 derivative=1 The electronic component is a beveled surface, and the intermediate structure of the second item of the second page of the page 2 is in which the surface angle of the surface substrate of the inclined substrate of the convex body is 〇°, relative to the insulation ^ The viscous body 47 201247056 u. The three-dimensional structure in which the surface of the seed is provided with a wiring is obtained by the wiring method of the surface of the three-dimensional structure as in the application of Patent No. 1 or 4. 12. A method for wiring a surface of a three-dimensional structure, comprising: forming a body, and forming a body on the surface of the insulating body and the surface by a tree member. In the step of forming a resin on the surface of the convex body and the surface of the insulating substrate电; electric_case formation step 'by laser processing from the outer surface side, forming a thickness of the lining, showing the surface of the light surface or the hole, forming the surface and === (four), making Wei Lin or its surface pure «The road pattern table resin film removing step, removing the resin film; and the electric charge forming step formed by the plated coffee composition, forming a step opposite to the surface of the insulating substrate, the circuit pattern forming step, facing the surface of the insulating substrate: When the laser beam is irradiated toward the inclined surface of the convex body, the energy of the f-ejection between the 141 and the ff is increased as compared with the surface of the surface of the material. The wiring method of the surface of the stereostructure &amp; the insulating resin layer forming step, the insulating layer of the insulating layer containing the convex body; the rim base (4) surface hunting resin film formed by the resin _, in the insulating tree Circuit pattern forming step, #树月曰膜, degree exceeds the thickness of the tree, and the desired laser is applied to form a deep circuit pattern; J / wood and grooves and / or holes, forming a surface a resin film removing step of the catalyst or its precursor covering the circuit pattern, removing the resin ruthenium; and the plating film forming step 'forming only the electroless electricity in the residual portion of the total protective catalyst of the lightning protection or by the driving device thereof Forming the electric ore 48 201247056 and in the insulating resin layer forming step, the insulating tree t, 3 forming the convex body of the surface inclined surface has a step of forming the circuit pattern with respect to the insulating substrate, and is irradiated toward the surface of the insulating substrate When the laser is irradiated toward the inclined surface of the convex body, the laser is irradiated to the surface of the known and the lightning-emitting surface, and the wiring of the surface of the substrate (4) is insulated every unit time. The resin is formed into a convex shape And / or method: the application of the body wafer, and / or chip inductors or capacitors, etc., the multiplicity of the side of the circuit - the method, the I2 slave belly lining wire, the wiring frequency of the laser, so that each unit of time The energy of the laser is big. In the law, in the middle of the scorpion, the amount of the matching line on the surface of the three-dimensional structure is increased; ^ the speed of the axis of the laser, so that the energy per unit time _ laser, ϊί 12 reading miscellaneous silk The wiring is large, and the towel is used by the &amp; to the laser, so that the energy of the laser per unit time is increased by the method of the patented Fancai 12 on the surface of the three-dimensional structure. It is difficult to form a wiring convex shape on the surface of the three-dimensional structure, and the focus position of the laser is set between the position where the base of the convex body is moved and the position close to the upper surface. 2i. A three-dimensional structure having a wiring provided on the surface, which is obtained by the wiring method of the surface of the three-dimensional structure according to the items 12 to 20. , 49
TW100140115A 2010-11-05 2011-11-03 Wiring method for surface of solid structure, intermediate structure for obtaining solid structure having surface provided with wiring, and solid structure having surface provided with wiring TW201247056A (en)

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