201246609 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體，特別是指一種具有 表面突出反射層的發光二極體。 【先前技術】 參閱圖1，已知發光 土双11 议復 在該基板11之表面的緩衝層12、一發光單元13、一透明導 電層14、一 η側電極15,以及一 p側電極16。該發光單元 13由下往上依序包括：一個n型披覆層131、一發光層m ’以及一個p型披覆層133。而該n側電極15及p側電極 16可將外部注入的電流傳導給該發光單元13，使電子、電 洞在該發光層132結合而發光。 所述η側電極15及p側電極16都可以為—層、兩層 或三層以上的金屬堆疊而成’但由於早期咖使用的η側 電極15及ρ側電極16的反射率較低，造成入射在電極下 方的光幾乎都被電極吸收，無法有效將光取出，此種現象 無論是在藍光LED或紅光LED都相同。 2_年L K· Sheu等人於期刊中發表（期刊出處： 卸_physicsLet㈣，vol.93，p.1〇35〇7 2〇〇8)，利用高反 射率Ag/Cr/Au (對465nm波長的光反射率為92% )或 (對465nm波長的光反射率為9〇%)取代前述低反 射率的電極以提升光取出效率。 然而，只是單純地改變電極材質，光取出效率還是有 限，因為電極軸可則中路徑的光線反射到 201246609 卜p仁有些光線還是無法被取出，例如路徑A3的光 、：射到該p側電極16的入射角較小，該光線就無法直接 :反射到LED外部’而會在該p側電極16下方來回振盪而 成月匕量損耗’導致光無法被有效地取出。類似地，路徑 A4的光反射到n側電極”下方再往上朝該n側電極b入 射時，也會因為入射角度太小而纟LED内部上下來回振盪 ’亦無法有效地取出。 【發明内容】 *因此，本發明之目的，即在提供一種其反射層的表面 突出，能提升纽射效果及光取出效㈣發光二極體。 於是’本發明具有表面突出反射層的發光二極體’包 含：-基材、-發光單元、—電極單元，以及—反射單元 〇 該發光單元設置在該基材上’並包括由遠離而鄰近該 基材的-第-披覆層、一發光層’以及一第二彼覆層。該 電極單元包括一個位於該第一披覆層上方並電連接該第二 彼覆層的第一電極。 該反射單元包括一個對應地位於該第—電極下方且位 於該發光層上方的第-反射層，該第—反射層具有一個朝 向該第-電極的第一表面’以及一相反於該第一表面的第 一反射面，該第一反射面包括一個圍繞在外周的第一周緣 ，以及一個被包圍在該第一周緣内的第一高點，且該第'一 反射面是由該第-周緣往該第一高點逐漸地朝該發光層方 向突出。 201246609 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之五個較佳實施例的詳細說明中，將可 清楚的呈現。在本發明被詳細描述前，要注意的是’在以 下的說明内容令’類似的元件是以相同的編號來表示。 參閱圖2’本發明具有表面突出反射層的發光二極體之 第一較佳實施例’是以氮化鎵（GaN)系的橫向led為例，但 不以此為限。所述發光二極體包含：一基材2、一發光單元 3、一透明導電層4、一電連接該發光單元3的電極單元5 ，以及一反射單元6。 該基材2包括一基板21，以及一彼覆在該基板21的表 面的緩衝層22。本實施例之基板21為藍寶石基板，該緩衝 層22為未摻雜的GaN製成。所述基材2結構不限於本實施 例之形態。 該發光單元3披覆在該緩衝層22的表面，而且由遠離 而鄰近該基材2(在本實施例相當於由上往下）依序包括：一 第一披覆層31、一發光層32，以及一第二彼覆層％。 該第二彼覆層33為GaN系材料製成的n型半導體層， 位於該緩衝層22之表面。該發光層32可以為涵蓋⑽系 材料的同質結構、#質結構’或多重量子井結構(Μιιΐ_ Q刪um ，簡稱MQW)。而該第一彼覆層3i為⑽系 材料製成的p型半導體層。 該透明導電層4位於該第一彼覆層31的表面，其材料 為氧化銦錫（ιτο)、氧化録錫（CT0)、鎳/金（Ni/Au)、氧化銀 201246609 銦/錫（AgIn〇2/Sn) ’或氧化辞摻雜紹（Zn〇 : ai，簡稱μ⑺… 等等的材料，並具有高度透光性以及良好的導電特性。 該電極單元5包括一個位於該透明導電層4上並透過 該反射單S 6及透明導電層4而電連接該第一披覆層Μ的 第一電極5卜以及一個電連接地位於該第二披覆層μ之裸 露表面上的第二電極52,藉由所述第一、二電極^、^將 外部電能提供給該發光單元3而發光。 該反射單元6包括-個對應該第—電極51地位於第一 電極51下方的第—反射層61，以及_個對應該第二電極 52地位於第二電極52下方的第二反射層62。該第一反射 層61埋設在該透明導電層4的頂部，並介於該透明導電層 4及該第一電極51之間。 該第一反射層61具有一個朝向該第一電極51且水平 的第一表面61卜以及一相反於該第一表面611的第一反射 面612’該第-反射面612包括—個圍繞在外周的第一周緣 613,以及一個被包圍在該第一周緣613内的第_高點：μ ，在本實施例中，該第一反射面612是由 y ^ 疋田邊第—周緣613 往該第一高點614逐漸地朝該發光層32的方向突出延伸， 並且是呈斜直線狀地延伸。本實施例的第一反射面612是 以該第一高點614為中心而呈兩側對稱的形態，該第一高 點614位於該第-反射面612的中央位置，但不限於此， 因為該第一高點614也可以偏離中央位置，或者該第 f 點614的左右兩側的高度變化也可以相 ^日U。本實施例的 第-反射層61材料為具有高反射率的金屬，例如銀㈣、 201246609 鋁（Al)、鉻（Cr)、金（Au)、姥_、鈦（Ti)、銅（cu卜姻⑽ 鉑（Pt) le (Pd)、銀⑻等材料，或上述材料的任一組合。 該第-反射層61的材質可以與該第一電極51相同也可 以不同。 該第二反射層62埋設在該第二披覆層33中，並介於 該第二披覆層33及第二電極52之間，且包括一個朝向該 第二電極52㈣二表自621，卩及一相反於該第二表面 621的第二反射面622,該第二反射面似包括一個圍繞在 外周的第二周緣623，以及一個被包圍在該第二周緣623内 的第二高點624，且該第二反射面622是由該第二周緣623 往該第二高點624逐漸地朝該第二彼覆層33的方向突出延 伸。由於第二反射層62的材料及結構皆與該第一反射層Η 相同，因此不再詳細說明。 本實施例製作時，主要是在形成該透明導電層4之後 ，將該透明導電層4的局部部位蝕刻移除，形成一預定形 狀的凹槽，以本實施例而言，為截面呈三角形的凹槽再 於該凹槽中沉積該第一反射層61，接續再沉積該第一電極 η ;類似地，該第二反射層62是在該第二彼覆層33的局 部部位蝕刻移除後再沉積披覆。 本發明使用時，該發光層32對應於該第一電極51往 上發射的光線，不會直接射向該第一電極51，而是受到該 第一電極51下方的第一反射層61反射，由於其第一反射 面612為向下突出的傾斜表面，有利於將光線反射到 外部，例如圖2的光線Bl、B2所示，因此能提升光取出效 201246609 率。同樣道理，發光層32向下發出的光線B3、B4，在受 到該緩衝層22或其它層體反射且往上朝該第二電極52方 向入射時’光線會受到該第二電極52下方的第二反射層62 之向下突出的第二反射面622反射，因而將光線朝LED外 部反射出去，提升光取出效率。 值得一提的是，將本發明與圖1的已知發光二極體作 比較，本發明圖2的光線B1的初始路徑與圖1的光線A3 相同，但由於本發明第一反射層61的特殊設計，使光線Bl 入射到該第一反射面612的入射角較大’且最後能被向外 反射；類似地，本發明圖2的光線B4相對於圖丨的光線 A4而5，本發明的光線B4也能被朝外反射而達到光取出 目的。 需要說明的是，本發明不以設置該第二反射層62為必 要，因為只設置該第一反射層61時，對於將光線向外反射 就有很大的助益。 综上所述，藉由在第一電極51下方且在該發光層32 上方設置該第一反射層61，避免光線直接射向電極而被電 極吸收，而且利用第一反射面612及第二反射面622朝下 傾斜突出的特殊表面設計，此種突出表面相對於水平表面 更有利於將光線朝外反射，因此本發明具有良好的光反射 效果，提升光取出效率及發光效率。 參閱圖3的俯視示意圖，在此補充說明，本發明所述 的第一電極51，實際上也可以包括一個本體511，以及二個 連接該本體511且為細長狀的延伸體512(一般又稱為 201246609 finger)，當然’該第一電極51的形態還可以有其它不同變 4其开乂 I不在本發明限定的範圍内。請再配合參閱圖2 本發明所述的第一反射層61的大小及位置可以作變化設 什，該第一反射層61可以對應地位於整個第一電極Η的 下方’也可以只對應該第一電極51❺局部部位例如只位 ;圖3該本體511下方’或只位於至少一個延伸體的下 方’因為本發明的精神在於’只要設置該第-反射層61， 並使第-反射層61的位置及大小至少涵蓋該第—電極51 的局部部位，就可以㈣本發明前述功效。類似地，該第 二反射層62祕於涵蓋對應整個第二電極52，只要雖涵蓋 該第一電極52的局部部位即可。 參閱圖4’本發明具有表面突出反射層的發光二極體之 第一較佳實％例’與該第一較佳實施例大致相同，不同的 地方在於·本實施例的第一反射層61埋設在該第一披覆層 31的頂部，並介於該第一披覆層31與該透明導電層4之間 。當然，該第一反射層61仍必需對應該第-電極51地位 於第一電極51下方。 也就是說，本發明的精神是必需在第一電極5丨下方且 在該發光層32上方的位置設置反射層，而且反射層用於反 射光線的表面必需為仓山^ ± 句内下犬出的表面，因為此種表面相對 於水平表面而言，能有效將光線朝外反射。 參閱圖5纟發明具有表面突出反射層的發光二極體之 第一較佳實她例’與該第一較佳實施例大致相同，不同的 地方在於：本實施例的第-反射® 612為弧曲表面，並且 201246609 是自其位於外周的第—周緣613 _地朝其位於中央的第 一高點6U弧曲地往下突出延伸。而該第二反射自似的 形態與該第一反射面612相同，不再說明。 因此，本發明之反射層的向下突出的反射面的形態不 /頁限制T以為斜直線狀、拋物面、球面或其它形態的下 突表面。 參閱圖6’本發明具有表面突出反射層的發光二極體之 第四較佳實施例，與該第—較佳實施例大致相同，不㈣ 地方在於··本實施例的第一反射層61包括一個由金屬製成 且可導電的第一反射部615，以及一個包圍在該第一反射部 615外周並且為非金屬材料製成的第二反射部㈣，該第二 反射°P 616具有該朝下突出的第-反射面612。所述第一反 射部…_例如銀、紹、鉻、金、姥、鈦、銅、銦、 !白、纪、銀等材料，或上述材料的任一組合。該第二反射 卩的材料例如—氧化外Si〇2)、氧化銦錫（⑽）、二氧化 鈦（Ti〇2)、三氧化二组（Ta2〇3).··等氧化物，或者例如氮化矽 (SlNx)專等的氮化物，或上述材料的任-組合。 ，、透過金屬的第一反射部615及非金屬的第二反射部616 》成DR(〇mni_DlreetiQnal Refi⑽。〇反光結構能提升光 反射效果，所述〇DR結構例如Ag/㈣2、Ag/iT〇、A·。 =1/Sl〇2’或A1/IT0..·等等。此外，當該第二反射部616 用騎材料，例如、SiNx ...等絕緣物時，藉由 緣特性而提供電流阻障的功能，使電流如冑6箭頭所^ 從該第-電極51的外側朝下流動，而不會只集中流動於該 201246609 第—電極51的正下方，因此本實施例除了能將光線朝外部 反射，還具有使電流向外均勻擴散的效果。 需要說明的是’該第一反射層61的反射部的數量不須 限制，也可以為三個或三個以上，換句話說，該第一反射 層61也可以為三層以上的膜層堆疊形成。 參閱圖7’本發明具有表面突出反射層的發光二極體之 第五較佳實施例，為垂直式LED，並包含：一基材2、—發 光單元3、一電連接該發光單元3的電極單元5，以及一反 射單元6。 該基材2包括一個可導電的基板21，以及至少一層位 於該基板21上並用於提升該發光單元3與該基板21間的 t合力的結合層23 ^但該基材2的形態及材質不須限制。 該發光單元3包括由遠離而鄰近該基材2的一第一披 覆層31、—發光層32，以及一第二披覆層33。一般垂直式 7的第一彼覆層31 $ n型半導體，該第二披覆層33為P 型半導體，當然，實施時不須限制，也可以為相反形態。 而該電極單5包括一層位於該第一坡覆層31上方的 電極51，由於該基板21可導電，因此只設置該第一電 1即可與該基板21配合將外部電力傳輸給該發光單元3 〇 …I反射單元6包括一個設置在該第一電極51下方且位 ;〜第披覆層31上方的第一反射層61，該第一反射層 日同樣具有向下傾斜突出的第一反射面612。因此，本發 月之特殊結構的反射層，也可以應用於垂直式咖中有 11 201246609 助於將光線朝LED外部反射。 需要說明的是，在垂直式LED中，也可以在該第一披 覆層31上方先設置一層透明導電層，再於透明導電層上設 置該第一電極51，此時該第一反射層61可以設置於透明導 電層的表面，也可以設置於該第一披覆層31的表面，只要 該第一反射層61對應該第一電極51地位於第一電極51下 方’且位於該發光層32上方即可。 此外，本發明所述的垂直式LED可應用於藍光、綠光 、紅光…等等的LED，實施時不須限制其色光及具體結構 ，因為不同色光的LED結構或材料可能會有不同，但皆為 本發明的保護範圍。例如以紅光LED為例，其基板2ι可以 使用GaAs’並且在該基板21的底面會另外設置一金屬製 的電極層以輔助導電。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請i利 範圍及發明說明内容所作之簡單的等效變化與修飾7皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一種已知發光二極體的示意圖； 圖2是-示意圖，顯示本發明具有表面突出反射層的 發光二極體之一第一較佳實施例； 。圖3是本發明具有表面突出反射層的發光二極體之一 俯視不意圖， 圆4是一示意圖，顯示本發明具有表面突出反射層的 12 ⑧ 201246609 發光二極體之一第二較佳實施例； 圖5是一示意圖，顯示本發明具有表面突出反射層的 發光二極體之一第三較佳實施例； 圖6是一示意圖，顯示本發明具有表面突出反射層的 發光二極體之一第四較佳實施例，同時示意電流流動路徑 :及 圖7是一示意圖，顯示本發明具有表面突出反射層的 發光二極體之一第五較佳實施例。 13 201246609 【主要元件符號說明】 2…… •…基材 6 ....... …反射單元 21 …·· —基板 61…… …第一反射層 22·.··· …·緩衝層 611 ···· …第 表面 23… •…結合層 612 …第一反射面 3…… •…發光單元 613… …第一周緣 31 ··... …·第彼覆層 614 ···· …第一高點 32·.··· •…發光層 615… …第一反射部 33….· —第一彼覆層 616 .... …第二反射部 4…… •…透明導電層 62…… …第二反射層 5…… .···電極單元 621 ···· …第·一表面 51··..· •…第一電極 622 .··· …第二反射面 511… …·本體 623 .... …第二周緣 512 ... •…延伸體 624 ···· …第二高點 52…·. •…第二電極 B1-B4 …光線 14201246609 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode having a surface protruding reflection layer. [Prior Art] Referring to Fig. 1, a buffer layer 12, a light-emitting unit 13, a transparent conductive layer 14, an n-side electrode 15, and a p-side electrode 16 which are known on the surface of the substrate 11 are known. . The light-emitting unit 13 includes, in order from bottom to top, an n-type cladding layer 131, a light-emitting layer m', and a p-type cladding layer 133. On the other hand, the n-side electrode 15 and the p-side electrode 16 can conduct an externally injected current to the light-emitting unit 13, and the electrons and the holes are combined in the light-emitting layer 132 to emit light. The n-side electrode 15 and the p-side electrode 16 may be stacked in a layer of two layers or three or more layers. However, since the reflectance of the n-side electrode 15 and the p-side electrode 16 used in the early days is low, The light incident on the underside of the electrode is almost absorbed by the electrode, and the light cannot be effectively taken out. This phenomenon is the same in either the blue LED or the red LED. 2_YLK·Sheu et al. published in the journal (Journal source: Unloading_physicsLet(4), vol.93, p.1〇35〇7 2〇〇8), using high reflectivity Ag/Cr/Au (for 465nm wavelength The light reflectance of 92%) or (the light reflectance of 465 nm wavelength is 9%) replaces the aforementioned low reflectance electrode to improve light extraction efficiency. However, simply changing the electrode material, the light extraction efficiency is still limited, because the electrode axis can reflect the light in the middle path to 201246609. Some light can not be taken out, for example, the light of path A3, the light is incident on the p-side electrode. When the incident angle of 16 is small, the light cannot be directly reflected: it is reflected to the outside of the LED and will oscillate back and forth under the p-side electrode 16 to cause a loss of the moon', so that the light cannot be effectively taken out. Similarly, when the light of the path A4 is reflected below the n-side electrode and then incident toward the n-side electrode b, the incident angle is too small, and the inside of the LED oscillates up and down. * Therefore, the object of the present invention is to provide a surface of the reflective layer which can enhance the directing effect and the light extraction effect (4) of the light-emitting diode. Thus, the present invention has a light-emitting diode having a surface protruding reflecting layer. The invention comprises: a substrate, a light emitting unit, an electrode unit, and a reflecting unit, wherein the light emitting unit is disposed on the substrate and includes a first coating layer and a light emitting layer adjacent to the substrate. And a second cladding layer, the electrode unit includes a first electrode above the first cladding layer and electrically connected to the second cladding layer. The reflective unit includes a correspondingly located under the first electrode and located a first reflective layer above the luminescent layer, the first reflective surface having a first surface facing the first electrode and a first reflective surface opposite to the first surface, the first reflective surface comprising Surrounding a first circumference of the outer circumference, and a first high point surrounded by the first circumference, and the first 'reflection surface is gradually emitted from the first circumference to the first high point toward the first high point The above-mentioned and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before being described in detail, it is to be noted that the same elements in the following description are denoted by the same reference numerals. Referring to Figure 2, a first preferred embodiment of the present invention has a light-emitting diode having a surface protruding reflective layer. The example is a lateral LED of a gallium nitride (GaN) system, but is not limited thereto. The light emitting diode comprises: a substrate 2, a light emitting unit 3, a transparent conductive layer 4, and an electric An electrode unit 5 connected to the light-emitting unit 3 and a reflection unit 6. The substrate 2 includes a substrate 21 and a buffer layer 22 covering the surface of the substrate 21. The substrate 21 of the embodiment is a sapphire substrate. The buffer layer 22 is undoped The structure of the substrate 2 is not limited to the form of the embodiment. The light-emitting unit 3 is coated on the surface of the buffer layer 22, and is adjacent to the substrate 2 away from the substrate 2 (in this embodiment, equivalent to The method includes a first cladding layer 31, a light emitting layer 32, and a second cladding layer. The second cladding layer 33 is an n-type semiconductor layer made of a GaN-based material. The surface of the buffer layer 22. The light-emitting layer 32 may be a homogenous structure covering a (10) material, a #质结构' or a multiple quantum well structure (Μιιΐ_Q deletingum, abbreviated as MQW), and the first cladding layer 3i is a (10) system. a p-type semiconductor layer made of a material. The transparent conductive layer 4 is located on the surface of the first cladding layer 31, and the material thereof is indium tin oxide (ITO), oxidized recording tin (CT0), and nickel/gold (Ni/Au). , silver oxide 201246609 indium / tin (AgIn 〇 2 / Sn) 'or oxidized words doped (Zn 〇: ai, referred to as μ (7) ... and so on, and has a high degree of light transmission and good electrical conductivity. The electrode unit 5 includes a first electrode 5 on the transparent conductive layer 4 and electrically connected to the first cladding layer 透过 through the reflective single S 6 and the transparent conductive layer 4, and an electrical connection located at the second The second electrode 52 on the exposed surface of the cladding layer μ emits external electric energy to the light emitting unit 3 by the first and second electrodes. The reflecting unit 6 includes a first reflecting layer 61 corresponding to the first electrode 51 under the first electrode 51, and a second reflecting layer 62 corresponding to the second electrode 52 below the second electrode 52. The first reflective layer 61 is embedded on the top of the transparent conductive layer 4 and interposed between the transparent conductive layer 4 and the first electrode 51. The first reflective layer 61 has a first surface 61 facing the first electrode 51 and a first reflecting surface 612' opposite to the first surface 611. The first reflecting surface 612 includes a surrounding circumference. a first circumference 613, and a _high point: μ enclosed in the first circumference 613. In the embodiment, the first reflection surface 612 is from the y ^ 疋 Tianbian first-circumference 613 The first high point 614 gradually protrudes in the direction of the light-emitting layer 32 and extends obliquely in a straight line. The first reflecting surface 612 of the embodiment is symmetrical with respect to the first high point 614, and the first high point 614 is located at the center of the first reflecting surface 612, but is not limited thereto. The first high point 614 may also deviate from the central position, or the height change of the left and right sides of the f-th point 614 may also be U. The material of the first reflective layer 61 of the present embodiment is a metal having high reflectivity, such as silver (four), 201246609 aluminum (Al), chromium (Cr), gold (Au), yttrium, titanium (Ti), copper (cu) (10) A material such as platinum (Pt) le (Pd) or silver (8), or any combination of the above materials. The material of the first reflective layer 61 may be the same as or different from the first electrode 51. The second reflective layer 62 Buried in the second cladding layer 33, and between the second cladding layer 33 and the second electrode 52, and including a second electrode 52 (four) two from 621, and one opposite to the first a second reflecting surface 622 of the second surface 621, the second reflecting surface comprising a second peripheral edge 623 surrounding the outer circumference, and a second high point 624 surrounded by the second peripheral edge 623, and the second reflection The surface 622 extends from the second peripheral edge 623 toward the second high point 624 gradually toward the second cover layer 33. Since the material and structure of the second reflective layer 62 are the same as the first reflective layer Η Therefore, it will not be described in detail. In the production of this embodiment, the transparent conductive layer 4 is mainly formed after the transparent conductive layer 4 is formed. The local portion of the electric layer 4 is etched away to form a groove of a predetermined shape. In the embodiment, a groove having a triangular cross section is deposited in the groove, and the first reflective layer 61 is deposited. Similarly, the second reflective layer 62 is deposited and removed after being etched away from the local portion of the second cover layer 33. In the present invention, the luminescent layer 32 corresponds to the first electrode. The light emitted upwards 51 is not directly incident on the first electrode 51, but is reflected by the first reflective layer 61 under the first electrode 51, and since the first reflective surface 612 is an inclined surface protruding downward, It is advantageous to reflect the light to the outside, for example, as shown by the light rays B1 and B2 of FIG. 2, so that the light extraction efficiency 201246609 rate can be improved. Similarly, the light rays B3 and B4 emitted from the light-emitting layer 32 are subjected to the buffer layer 22 or When the other layer is reflected and incident upward in the direction of the second electrode 52, the light is reflected by the second reflecting surface 622 protruding downward from the second reflecting layer 62 under the second electrode 52, thereby directing the light toward the outside of the LED. Reflecting out, improving light extraction It is worth mentioning that, compared with the known light-emitting diode of FIG. 1, the initial path of the light B1 of FIG. 2 of the present invention is the same as the light A3 of FIG. 1, but the first reflective layer 61 of the present invention is The special design is such that the incident angle of the light B1 incident on the first reflecting surface 612 is larger and finally can be reflected outward; similarly, the light B4 of the present invention is relative to the light A4 of the image, 5 The light B4 of the invention can also be reflected outward to achieve the purpose of light extraction. It should be noted that the present invention is not necessary to provide the second reflective layer 62, because only the first reflective layer 61 is provided, External reflection is very helpful. In summary, by disposing the first reflective layer 61 under the first electrode 51 and above the light-emitting layer 32, light is prevented from being directly incident on the electrode and absorbed by the electrode, and the first reflective surface 612 and the second reflection are utilized. The surface 622 is inclined downwardly and protrudes from a special surface design. The protruding surface is more favorable for reflecting light outward with respect to the horizontal surface. Therefore, the present invention has a good light reflection effect, and improves light extraction efficiency and luminous efficiency. Referring to the top view of FIG. 3 , the first electrode 51 of the present invention may actually include a body 511 and two extensions 512 connected to the body 511 and are elongated (generally referred to as It is 201246609 finger), of course, the shape of the first electrode 51 may have other variations, and the opening I is not within the scope of the present invention. Please refer to FIG. 2 again. The size and position of the first reflective layer 61 according to the present invention may be changed. The first reflective layer 61 may be correspondingly located below the entire first electrode '. A portion of the electrode 51 is, for example, only a bit; FIG. 3 is below the body 511 or only below the at least one extension' because the spirit of the present invention is as long as the first reflective layer 61 is provided and the first reflective layer 61 is provided. The position and size of at least the partial portion of the first electrode 51 can be used to (4) the aforementioned effects of the present invention. Similarly, the second reflective layer 62 is secreted to cover the entire second electrode 52 as long as it covers a partial portion of the first electrode 52. Referring to FIG. 4, the first preferred embodiment of the present invention has a light-emitting diode having a surface protruding reflective layer. The first preferred embodiment is substantially the same as the first preferred embodiment. The difference lies in the first reflective layer 61 of the present embodiment. It is buried on the top of the first cladding layer 31 and between the first cladding layer 31 and the transparent conductive layer 4. Of course, the first reflective layer 61 still has to correspond to the first electrode 51 under the first electrode 51. That is, the spirit of the present invention is that it is necessary to provide a reflective layer under the first electrode 5丨 and above the light-emitting layer 32, and the surface of the reflective layer for reflecting light must be in the middle of the sentence. The surface, because such a surface is effective to reflect light outward with respect to the horizontal surface. Referring to FIG. 5, a first preferred embodiment of a light-emitting diode having a surface protruding reflective layer is substantially the same as the first preferred embodiment, except that the first-reflection® 612 of the present embodiment is The curved surface, and 201246609 is extended downward from the first circumference 613 _ of the outer circumference toward the first high point 6U in the center. The second reflection self-like form is the same as the first reflection surface 612 and will not be described. Therefore, the shape of the downwardly projecting reflecting surface of the reflecting layer of the present invention is not limited to the page limit T, and is a rectilinear surface, a paraboloid, a spherical surface or the like. Referring to Fig. 6', a fourth preferred embodiment of the light-emitting diode of the present invention having a surface protruding reflective layer is substantially the same as the first preferred embodiment. The fourth reflective layer 61 of the present embodiment is not provided. A first reflective portion 615 made of metal and electrically conductive, and a second reflective portion (four) surrounded by the outer periphery of the first reflective portion 615 and made of a non-metallic material, the second reflective portion 616 having the A first reflecting surface 612 that protrudes downward. The first reflecting portion is, for example, a material such as silver, sulphur, chrome, gold, rhodium, titanium, copper, indium, white, silver, silver, or the like, or any combination of the above materials. The material of the second reflective yttrium is, for example, an oxidized outer Si 2 (2), an indium tin oxide (10), a titanium oxide (Ti 2 ), an oxide (Ta 2 〇 3), or the like, or is, for example, nitrided.专(SlNx) is a nitride of the class, or any combination of the above materials. The first reflective portion 615 of the metal and the second reflective portion 616 of the non-metal are formed into DR (〇mni_DlreetiQnal Refi (10). The reflective structure can enhance the light reflection effect, such as Ag/(4)2, Ag/iT〇 , A·. =1/Sl〇2' or A1/IT0.., etc. Further, when the second reflecting portion 616 is used as an insulator such as SiNx ..., by the edge characteristics The current blocking function is provided so that the current flows downward from the outer side of the first electrode 51 such as the arrow 6 , and does not concentrate only directly under the first electrode 51 of the 201246609, so the present embodiment can Reflecting the light toward the outside also has the effect of uniformly spreading the current outward. It should be noted that the number of the reflecting portions of the first reflecting layer 61 is not limited, and may be three or more, in other words, in other words The first reflective layer 61 may also be formed by stacking more than three layers of the film layer. Referring to FIG. 7A, a fifth preferred embodiment of the light emitting diode having the surface protruding reflective layer of the present invention is a vertical LED and includes a substrate 2, a light-emitting unit 3, and an electrical connection unit 3 The electrode unit 5, and a reflecting unit 6. The substrate 2 includes an electrically conductive substrate 21, and at least one bonding layer 23 on the substrate 21 for lifting the combined force of the light unit 3 and the substrate 21. However, the shape and material of the substrate 2 are not limited. The light-emitting unit 3 includes a first cladding layer 31, a light-emitting layer 32, and a second cladding layer 33, which are adjacent to the substrate 2 away from each other. Generally, the first sub-layer 31 of the vertical type 7 is a semiconductor of the type N, and the second cladding layer 33 is a P-type semiconductor. Of course, the implementation is not limited, and may be reversed. The electrode unit 5 includes a layer. The electrode 51 above the first slope coating 31, since the substrate 21 is electrically conductive, only the first electric 1 can be disposed to cooperate with the substrate 21 to transmit external power to the light emitting unit 3... The reflective unit 6 includes a first reflective layer 61 disposed under the first electrode 51 and at a position above the first cladding layer 31. The first reflective layer also has a first reflective surface 612 that protrudes downwardly. Therefore, this month The special structure of the reflective layer can also be applied to vertical There is 11 201246609 in the coffee machine to help reflect the light to the outside of the LED. It should be noted that in the vertical LED, a transparent conductive layer may be disposed above the first cladding layer 31, and then on the transparent conductive layer. The first reflective layer 61 may be disposed on the surface of the transparent conductive layer, or may be disposed on the surface of the first cladding layer 31 as long as the first reflective layer 61 corresponds to the first electrode. 51 is located below the first electrode 51 and located above the light-emitting layer 32. In addition, the vertical LED of the present invention can be applied to LEDs of blue light, green light, red light, etc., without limitation. Its color and specific structure, because the LED structure or material of different color light may be different, but they are all the protection scope of the invention. For example, in the case of a red LED, a substrate 2 ι can be made of GaAs' and a metal electrode layer is additionally provided on the bottom surface of the substrate 21 to assist in conduction. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the present invention in accordance with the scope of the invention and the description of the invention. 7 is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a known light-emitting diode; FIG. 2 is a schematic view showing a first preferred embodiment of the light-emitting diode of the present invention having a surface protruding reflective layer; 3 is a top view of a light-emitting diode having a surface protruding reflective layer according to the present invention, and a circle 4 is a schematic view showing a second preferred embodiment of the present invention having a surface protruding reflective layer of 12 8 201246609 light-emitting diode. FIG. 5 is a schematic view showing a third preferred embodiment of the light-emitting diode of the present invention having a surface protruding reflective layer; FIG. 6 is a schematic view showing the light-emitting diode of the present invention having a surface protruding reflective layer; A fourth preferred embodiment, while illustrating the current flow path: and Figure 7 is a schematic view showing a fifth preferred embodiment of the light emitting diode of the present invention having a surface protruding reflective layer. 13 201246609 [Explanation of main component symbols] 2... •...Substrate 6 .............Reflecting unit 21 ...·· - Substrate 61... First reflective layer 22·······Buffer layer 611 ···· ...the surface 23...•...the bonding layer 612...the first reflecting surface 3...•...the light-emitting unit 613...the first peripheral edge 31··...the second cladding layer 614··· · ...the first high point 32 ······...the light-emitting layer 615...the first reflection portion 33....--the first cover layer 616 ....the second reflection portion 4... Layer 62...the second reflective layer 5...the electrode unit 621....the first surface 51··.....the first electrode 622.....the second reflecting surface 511 ...·body 623 .... ...second circumference 512 ... •...extender 624 ···· ...second high point 52...·.......second electrode B1-B4 ...light 14