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TW201246431A - Substrate carrier - Google Patents

Substrate carrier Download PDF

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Publication number
TW201246431A
TW201246431A TW101111986A TW101111986A TW201246431A TW 201246431 A TW201246431 A TW 201246431A TW 101111986 A TW101111986 A TW 101111986A TW 101111986 A TW101111986 A TW 101111986A TW 201246431 A TW201246431 A TW 201246431A
Authority
TW
Taiwan
Prior art keywords
substrate
cross
struts
substrate carrier
bottom side
Prior art date
Application number
TW101111986A
Other languages
Chinese (zh)
Inventor
Stefan Schubert
Daniel Decker
Daniel Oelsner
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Publication of TW201246431A publication Critical patent/TW201246431A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • H10P72/10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a substrate carrier for transporting and for mounting substrates during coating in plasma chambers. The substrate carrier consists of a material that is dimensionally stable up to 800 DEG C, and has longitudinal struts and transverse struts which surround a plurality of openings into which substrates are inserted and held along the edges of the longitudinal and transverse struts. The substrates are supported on the underside at the edges such that a plasma wraparound is reduced. The undersides and/or the top sides of one or more of the transverse struts have a shaping that supports a gas and plasma flow transversely with respect to the transport direction of the substrate.

Description

201246431 六、發明說明: 【發明所屬之技術領域】 本發明涉及基板載體的橫撑條的構型方案,該構 型方案借助於相應的造型實現了對於在晶圓表面之上 引導等離子體和氣體的特別良好的能力。術語:基板 載體與晶_體、基板與晶圓在下面作相義詞使土用。 【先前技術】 基板载體尤其應用在半導體生產和太陽能電油 生產中。基板健用於在晶_輸送過程和處理過程 期托持晶®或基板。處理過程尤其是指晶圓經常在 較高的溫度和壓力(偏離於大氣壓力)下所經受的覆 層工藝和侃Ijjl#。因絲板載體在處理細同樣保 持基板,所以基板載體同樣經受這些處理條件。 處理過程要麼針對平面式的晶圓的一側,要麼兩 侧都針對。因此.,必需的是,如此設計晶圓在基板載 體中的托持方案,使縣板載體遮蓋盡可能少的表面 區域°此外’―個晶圓側的處理讀應盡可能少地影 響第二晶圓側。這尤其在㈣子體工藝中是有問題 的,這是因鱗離子體容錄過晶_棱邊流動,並 且也對背Φ部分地-起覆層。該現象被稱作“擁圍 (Umgreifen) ”,並且在多數情況中是不期望的。 另一目標是,使處理工藝可盡可能均勻地作用到 晶圓的整個©上,並且作_在基板雜+ 圓上。 ,日日 201246431 在這裏所考慮的基板載體具有平面式的、呈格拇 狀的構造,其中,晶圓被托持在格拇開口中。格桃開 口優選地是矩形的,然而,格柵開σ同樣可以是呈菱 形的、圓形的、橢圓形的或是帶有經倒棱或倒圓的角 部的矩形或者方形的。在此,格柵開口的形狀在雜 t尺寸上相應於待輸送的晶圓。晶圓在格柵開口中由 壤繞式的棱邊、小鉤、銷或類似的構造來保持,晶圓 平放在這些構造上。 一種相應的構造例如在〇£ 20 2⑻9 〇Qi 817 中描述’在其中,呈格柵狀的構造為了改善穩定性而 具有擴寬的遮蓋件來作為外框架。該晶圓載體由直至 800 C仍穩定的材料製成,所述材料優選是金屬(紹、 鋼、嫣、鈦),或由陶莞或碳纖維增強碳(CFc_Carb⑽ 製成。通過形成基板載體的 等:;=表面’因此應不受干擾地獲得表面上的 在US 2005/0061665 A1中,介紹了如下的 =且2圓載體同樣給多個晶圓提供位置。該晶圓載 _/、 個基礎框架以及一個或兩個辅助框架。蔚曰 ST在基礎框架的開口中借助於佈置在輔助框; 處的而且將晶圓壓向基礎框㈣好來進行。談 載體應尤其適合祕魏工#。在此 = 導電的材料製成,而辅助框架和夾子被 ==接,從而使得電鑛工藝變得可行。然而曰: 該框“型不適合祕等離子賴助^藝,因為不 4 201246431 , 平坦的導電表©將使⑽子體分斜分不均勾。 在根據現有技術的用於晶圓的等離子體 ^中’帶有晶板制經常條㈣速度敬過ς 處理設備’而與關喊行等離子體加r。在此,^ 離子體由上方和/或由下方料到晶圓上,並且多餘 等離子體或者賴姆讀送方向仙向±被吸走。 於是,在獅的表面之上出現複__子體流。 【發明内容】 本發_任務是,對在·的基域體的表面之 上的等離子體流產生積極的影響。 根據本發明,該任務通過根據權利要求丨的基板 載體的構财案得簡決。有_實财式在相關的 從屬權利要求中示出。 在等離子體室中進行覆層時用於輸送和托持基 板的根據本發明的基板載體由直至80(rc仍形狀穩定 的材料製成,並且具有縱撐條和橫撐條。縱撐條和橫 撐條呈格栅狀地圍成多個開口,基板被置入到這些開 口中並且沿著縱撐條和橫撐條的棱邊得到保持。尤其 地’基板在其底側上在棱邊處被如此支稽,使得盡可 能地減輕等離子體擁圍。基板載體的橫撐條的底側和/ 或上側具有如下造型,所述造型支援橫向於基板的輸 送方向的氣體流和等離子體流。在此,在基板載體的 邊緣處的縱撐條和橫撐條比不處在基板載體的邊緣處 的縱樓條和橫樓條更寬。 基板載體的大致上垂直(橫向)於基板載體的輸 201246431 运方向取向的擇條被稱作 平行於輸送方向取向的稼條广、。則縱擇條是大致上 體流受到條體流和氣 因此不同於縱樓條來構型 ==明’㈣條 i二、特別優選地至少横樓條的長度的 ;斷/°上延伸。凹槽和/或拼起部在其分佈走向中: 分職^上姊底側上 撐=側上具有至少一個凹槽二=黃 :=,凹槽和换起部在另-優選的實施方式; 僅上ί側之間交換。一種此外優選的實施方式不 =板撐條的上侧上而且在底側上均具有至少一個拱 同-個基板載體的橫撐條可有利地不同地設 计’從而使得例如橫撐條中的—些在上側上具有凹枰 並且在底側上具有拱起部’而其他的橫撑條在兩個側 上均具有彎拱部。相應的變型方案是優選的。 通過板撲條的根據本發明的構型,在基板的表面 之上的氣舰和等料m财職影響。實現了 201246431 =易地到達在側向上橫向於二:= 根據本發明的基板載體優選地 仍形狀穩定的材料製忐。大“士 ^ c 何料裏成。在此,特別適合的是鋼、鋁、 ,、鈦、_或碳纖維增強碳(CFC) 多個零件崎而_,频零件可城地由不 料製成。201246431 VI. Description of the Invention: [Technical Field] The present invention relates to a configuration of a cross struts of a substrate carrier, which is configured to guide plasma and gas over the surface of the wafer by means of corresponding styling Particularly good ability. Terminology: Substrate The carrier and the crystal body, the substrate and the wafer are used in the following to make a soil. [Prior Art] The substrate carrier is especially used in semiconductor production and solar electric oil production. The substrate is used to hold the Crystal® or substrate during the crystallization process and processing. The process especially refers to the cladding process and 侃Ijjl# that the wafer is often subjected to at higher temperatures and pressures (deviation from atmospheric pressure). Since the silk plate carrier also holds the substrate while being finely treated, the substrate carrier is also subjected to these processing conditions. The process is either for one side of the planar wafer or for both sides. Therefore, it is necessary to design the holding scheme of the wafer in the substrate carrier so that the county board carrier covers as little surface area as possible. In addition, the processing read of the wafer side should affect the second as little as possible. Wafer side. This is especially problematic in the (iv) daughter process, which is due to the scaly ion volume recording the granule-edge flow, and also to the back Φ partially-lifting layer. This phenomenon is called "Umgreifen" and is not desirable in most cases. Another goal is to have the process applied as evenly as possible across the entire wafer, and on the substrate + circle. , 201264231 The substrate carrier contemplated herein has a planar, frame-like configuration in which the wafer is held in the thumb opening. The opening of the peach is preferably rectangular, however, the opening σ of the grid may also be rhombic, circular, elliptical or rectangular or square with chamfered or rounded corners. Here, the shape of the grid opening corresponds to the wafer to be conveyed in a miscellaneous t dimension. The wafer is held in the grid opening by a soil-wound edge, a small hook, a pin or the like, and the wafer is placed flat on these structures. A corresponding configuration is described, for example, in 2020 2(8)9 〇Qi 817', in which a grid-like configuration has a widened cover for improved stability as an outer frame. The wafer carrier is made of a material that is stable up to 800 C, preferably made of metal (should, steel, tantalum, titanium), or made of ceramic or carbon fiber reinforced carbon (CFc_Carb (10). By forming a substrate carrier, etc. :; = surface 'so it should be obtained undisturbed on the surface. In US 2005/0061665 A1, the following = and the 2 circular carrier also provides the position for multiple wafers. The wafer carries _ /, the basic frame And one or two auxiliary frames. The Weishen ST is carried out in the opening of the basic frame by means of the auxiliary frame; and the pressing of the wafer against the basic frame (four) is good. The carrier should be especially suitable for the secret Weigong#. This = made of electrically conductive material, and the auxiliary frame and clip are == connected, making the electro-mineral process feasible. However, the frame is not suitable for the secret plasma, because it is not 4 201246431, flat conduction Table © will make the (10) sub-body split unevenly. In the plasma for wafers according to the prior art, 'with a plate-like regular strip (four) speed 敬 ς processing equipment' and with the shouting plasma Body plus r. Here, ^ ion body The upper and/or lower material is fed onto the wafer, and the excess plasma or the Rim read direction is sucked away. Thus, a complex __ daughter flow appears above the surface of the lion. The task is to have a positive effect on the plasma flow over the surface of the base body. According to the invention, this task is achieved by the construction of the substrate carrier according to the claim 。. The financial formula is shown in the related dependent claims. The substrate carrier according to the invention for transporting and holding the substrate during coating in a plasma chamber is made of a material up to 80 (rc is still dimensionally stable and has The longitudinal strut and the cross strut. The longitudinal strut and the transverse strut are arranged in a grid-like manner in a plurality of openings into which the substrate is placed and held along the edges of the longitudinal strut and the cross strut. In particular, the substrate is so arranged on its underside at the edge that the plasma entrapment is reduced as much as possible. The bottom side and/or the upper side of the cross-struts of the substrate carrier have the following shape, which supports lateral Gas in the direction of transport of the substrate Flow and plasma flow. Here, the longitudinal struts and cross struts at the edges of the substrate carrier are wider than the longitudinal and transverse slabs that are not at the edges of the substrate carrier. The substrate carrier is substantially vertical ( The transverse selection of the substrate carrier in the transport direction 201246431 is referred to as the width of the strip oriented parallel to the transport direction. The longitudinal strip is generally the body flow is subjected to the strip flow and the gas is thus different from the vertical strip. Type == 明'(四)条i II, particularly preferably at least the length of the transverse bar; the extension / ° extends upwards. The groove and / or the splicing portion in its distribution direction: the division ^ upper 姊 bottom side support = at least one groove on the side = yellow: =, the groove and the changeover are exchanged between the other preferred embodiments; only the upper side; a further preferred embodiment is not = the upper side of the struts The transverse struts which have at least one arch-on-substrate carrier on the bottom side can advantageously be designed differently such that, for example, some of the cross struts have recesses on the upper side and have on the bottom side The bulge 'and the other cross struts have curved portions on both sides. Corresponding variants are preferred. By the configuration according to the invention of the slap strip, the gas ship and the like on the surface of the substrate are affected. Achieved 201246431 = easy to reach in the lateral direction transverse to two: = The substrate carrier according to the invention is preferably made of a material that is still dimensionally stable. The big “shi” is what it is. Here, it is particularly suitable for steel, aluminum, titanium, _ or carbon fiber reinforced carbon (CFC). The parts can be made from unexpected materials.

在-種優選的實施方式中,基板載體由CFc製 成。基板載體以層壓方法來製造,在其中,不同的半 固化片(Prepreg)層被彼此相疊地放置,並且接下來 通過熱作用被石厌化。有利地,彼此相疊而置的半固化 片已被這樣構型,使得橫撐條獲得想要的形狀。這可 優選地通過將一個或多個内芯置入到半固化片層之間 來進行。優選地,經成形銑削(formf側en)的CFC 或石墨被用作内芯材料。然而,内芯材料不必與半固 化片的材料相同。重要的是,内芯由直至8〇〇。^仍形 狀穩定的材料製成’優選地由直至800。(:仍形狀穩定 的破纖維製成。另一優選的製造方法設計成··半固化 片被置入到在模具方面具有拱起部的模具中,從而使 得半固化片在碳化之後具有凹槽。另一優選的實施方 式設置有由一塊CFC經成形銑削而成的基板載體。用 於製造基板載體的其他方法由現有技術公知。 在一種優選的實施方式中,一個内芯構成多個彎 201246431 拱部。因此,在橫撐條的上側和底側上的彎棋部可例 如通過-個在橫雜内部的具有圓形或姻形橫截面 的内芯來構造。 基板在基板載體中的托持以已知的方式進行。優 選地,基板被保持在_條和猶條處的職式的棱 邊上。這也有利地減輕等離子體擁圍。㈣,在基板 的邊緣處留下了未經處理的區域。因此,托持的另一 優選的實施方式設置為:在縱撑條和㈣條上佈置有 鉤,所述鉤在基板的底側上近似呈點狀地支撐基板。 這減少了在底側上的未經處理的區域。另一解決方案 利用在縱撐條和橫撐條中的銷,用以支撐基板。此外, 縱撐條和橫撐條被這樣構型,即,避免具有銳角或直 角的棱邊。有利地,縱撐條和橫撐條被如此地倒棱, 即,棱邊直至達到基板表面地傾斜,而不具有高度突 變。 為了使等離子體擁圍降至最低程度,基於自動化 (基板載體的载料和卸料)所需要的、在縱撐條和橫 撐條與底片之間的環鐃式縫隙被有利地盡可能窄地構 造。 【實施方式】 圖1示出根據本發明的基板載體1的原理圖。用 於容納晶圓的開口 2由縱撐條3和橫撐條4圍成。在 開口 2中,晶圓由銷21來支撐。在基板載體丨的邊緣 處的縱撐條31和橫撐條41比處在基板載體丨的面内 部的那些縱撐條和橫撐條3、4更寬地實施。示出了兩 201246431 42 i 基板載體是切:的賴部仏。輪送方㈣說明了 戰4何穿行加工區_。 圖2示中 條4中具有㈣^根據本發明的基板載體’其在橫撐 度上延伸。凹挿V盘該凹槽43在橫樓條4的整個長 僧的松截面具有倒圓的凹穴。 3示出横撐條4的㈣时施方式。圖 44構成^ 的條4。彎卿42通過内芯 二二:::_4的内部,並且在這 持晶圓5的棱邊橫揮條4具有兩個用於托 邊T向曰門f成環繞式的起支撐作用的棱邊Μ。棱 ^離子崎,從科形射料利地影響 行地八佈Li1 兄角。根據圖4的實施方案具有兩個平 芯4:槿:起部42,拱起部42通過兩個分開的内 :+ 。圖5不出如下的實施方式,在其中,由兩 =芯44形成橫截面上倒圓的㈣咖的兩個側翼。 :44此處具有圓形的橫截面。根據圖6的實施方式 =具有拱起部42,而在底側上分佈有兩個平行 呈三角形的凹槽极。圖7示出在底側 3有拱起部42的橫揮條4。在底側上的梹起部通過 ,^向彎_抑44來構成。根據圖8的實施方 種在橫擇條4的上側和底側上帶有各一個彎 =42的橫擇條4。在這裏,彎拼部通過兩個内芯斜 構成。 201246431 【圖式簡單說明】 圖1示出根據本發明的基板載體1的原理圖。 圖2示出一種根據本發明的基板載體 圖3至圖8示出橫撐條4的不同的實施方式。 【主要元件符號說明】 1 晶圓載體(基板載體) 2 用於容納晶圓(基板)的開口 21 用於支撐晶圓的銷 22 用於支撐晶圓的環繞式的棱邊 3 縱撐條 31 在基板載體的邊緣處的縱撐條 4 橫撐條 41 在基板載體的邊緣處的橫撐條 42 在橫撐條上的不帶有中斷部的彎拱部 42a 在橫撐條上的帶有中斷部的彎拱部 43 在橫撐條中的凹槽 43a 在橫撐條中的具有經倒圓的橫截面的凹槽 43b 在橫撐條中的具有三角形的橫截面的凹槽 44 内芯 5 晶圓In a preferred embodiment, the substrate carrier is made of CFc. The substrate carrier is manufactured by a lamination method in which different prepreg layers are placed one on top of the other, and then the stone is annealed by heat. Advantageously, the prepregs that are placed one on top of the other have been configured such that the cross struts achieve the desired shape. This can preferably be done by placing one or more inner cores between the prepreg layers. Preferably, the shaped milling (formf side en) CFC or graphite is used as the inner core material. However, the inner core material does not have to be the same as the material of the semi-cured sheet. It is important that the inner core is up to 8 inches. ^The material is still shaped to be stable' preferably from up to 800. (: is still made of a shape-stable broken fiber. Another preferred manufacturing method is designed such that the prepreg is placed in a mold having a bulge in the mold, so that the prepreg has a groove after carbonization. Another preference The embodiment is provided with a substrate carrier that is shaped and milled from a piece of CFC. Other methods for fabricating a substrate carrier are known from the prior art. In a preferred embodiment, one inner core constitutes a plurality of bends 201246431 arches. The meanders on the upper and bottom sides of the cross struts can be constructed, for example, by an inner core having a circular or sinuous cross-section inside the cross-waist. The holding of the substrate in the substrate carrier is known The method is carried out. Preferably, the substrate is held on the edge of the job at the _ strip and the yoke. This also advantageously mitigates plasma entrapment. (iv) leaving an untreated area at the edge of the substrate Therefore, another preferred embodiment of the holding is provided such that hooks are arranged on the longitudinal struts and (four) strips which support the substrate approximately in a point shape on the bottom side of the substrate. An untreated area on the side. Another solution utilizes pins in the longitudinal struts and cross struts to support the substrate. Furthermore, the longitudinal struts and cross struts are configured such that they avoid sharp angles Or a right-angled edge. Advantageously, the longitudinal struts and the transverse struts are chamfered such that the edges are inclined up to the surface of the substrate without abrupt changes in height. To minimize plasma entrapment, The ring-shaped slit between the longitudinal struts and the cross struts and the backsheet, which is required for automation (loading and unloading of the substrate carrier), is advantageously configured to be as narrow as possible. [Embodiment] FIG. Schematic diagram of a substrate carrier 1 according to the invention. The opening 2 for accommodating the wafer is surrounded by a longitudinal strut 3 and a cross strut 4. In the opening 2, the wafer is supported by a pin 21. On the substrate carrier The longitudinal struts 31 and the transverse struts 41 at the edges are more widely implemented than those of the longitudinal struts and cross struts 3, 4 which are inside the face of the substrate carrier 。. It is shown that two 201246431 42 i substrate carriers are cut: Laibu 仏. The rotating party (four) explains the war 4 how to walk through the processing area _. 2 shows that the middle substrate 4 has (four) a substrate carrier according to the invention which extends over the transverse support. The recessed V disk has a rounded recess in the entire length of the transverse strip 4 of the transverse strip 4. 3 shows the (four) timing mode of the cross strut 4. Fig. 44 constitutes the strip 4 of the ^. The curved 42 passes through the inside of the inner core 22:::_4, and the edge of the wafer 5 is traversed 4 It has two edge ridges for supporting the tread edge T to the wrap door f. The ribs are ionic, and the influence of the slanting material on the octagonal Libu brilliance is affected. The solution has two flat cores 4: 槿: the starting portion 42, the bulging portion 42 passes through two separate inners: +. Figure 5 does not show an embodiment in which the cross-section is rounded by two = cores 44 The four wings of the (four) coffee. : 44 has a circular cross section here. According to the embodiment of Fig. 6, there is a bulging portion 42 with two parallel triangular grooved poles distributed on the bottom side. Figure 7 shows a traverse strip 4 having a bulge 42 on the bottom side 3. The swollen portion on the bottom side is formed by passing the bend _ 44. According to the embodiment of Fig. 8, a transverse strip 4 of one bend = 42 is provided on the upper and bottom sides of the transverse strip 4. Here, the bent portion is formed by two core cores. 201246431 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a schematic diagram of a substrate carrier 1 according to the present invention. Figure 2 shows a substrate carrier according to the invention. Figures 3 to 8 show different embodiments of the cross struts 4. [Description of main component symbols] 1 Wafer carrier (substrate carrier) 2 Opening 21 for accommodating a wafer (substrate) Pin 22 for supporting a wafer Wraparound edge for supporting a wafer 3 Vertical struts 31 Longitudinal strut 4 at the edge of the substrate carrier. Cross strut 41 at the edge of the substrate carrier. The cross braces 42 on the cross brace without the interruptions on the cross brace. The curved portion 43 of the interruption portion has a groove 43 in the cross struts, a groove 43b having a rounded cross section in the cross struts, and a groove 44 having a triangular cross section in the cross struts. 5 wafer

B 基板載體的輸送方向B substrate carrier transport direction

Claims (1)

201246431 七 、申請專利範圍 基域體’係在㈣子射巾進行覆層咖於輸送和 托持基板’其中,所述基板載體由直至_〇c仍形狀穩 成並且具有圍成多個開口的縱撐條和橫撐條,基板被 龜拔所^開ϋ巾並且沿著所述縱撐條和㈣條的棱邊得 :ΐ特徵在於,所述基板在底側上在所述棱邊處被如 m離子體擁_輕,並且所述條中的一個 2個域條的底側和/或上側具有如下造型,所述造型支援 橫向於所述基板的輸送方向的氣體流和等離子體流。 2. =巾請專利第丨項所述的基板賴,其特徵在於, 直接在所述基板賴的邊緣處佈置的而且與之平行地 和㈣條比佈置在魏轉敍㈣條之間的縱 撐條和橫撐條更寬。 3於根^請專利範圍第丨或2項崎的基板紐,其特 於七,非直接在所絲板載_邊緣處佈置的橫雜在上辩 /或底側上具有至少-慨著橫料最長伸展來分佈的凹槽, 仏根據中請專職圍第i或2項所述的基板賴其特徵在 非直接麵述基板載_魏處佈置的倾條在上側和 ^底側上具有至少-個沿著横料最長似來分佈的棋起 請細刪3和4如—所述的基板載體 ,在於,非直接在所縣__魏祕㈣橫撐條中的 > -些在橫鄕上側上具有料部並且錢撐條底側上 201246431 具有凹槽,或反過來, 條底側上具有梹起部, 展來分佈。 在橫撐條上側上具有凹槽並且在横撐 所述凹槽和拱起部沿著橫撐條最長伸 撕嫩賴,其特徵在 第6項所述的基板紐,其特徵在於, 維製成r至8歡仍形狀穩定的材料製成,優選由碳纖 8·根據中請專鄕圍第7項所述板賴,其特徵在於, 所述内芯的直至仍形狀穩定的材料是成形銑削的。 9. 根據前述申請專利範圍第μ項中任一項所述的基板載 體’其特徵在於,·基板在在所有棱邊處環繞式 的而且減輕所述等離子體擁圍的方式得到支撐。 10. 根據前述中請專利範圍第U項中任—項所述的基板載 體,其特徵在於,所絲板在細上借助於齡/或鉤得到支 撐,並且所述等離子體擁圍通過使基板與縱撐條或者橫撐條 之間的間距最小化而被減輕。 12201246431 VII. The scope of the patent application scope is based on (4) sub-foaming to carry out the coating and holding of the substrate, wherein the substrate carrier is still stable in shape until _〇c and has a plurality of openings. The longitudinal strut and the cross strut, the substrate is extracted by the turtle and along the edges of the longitudinal strut and the (four) strip: the crucible is characterized in that the substrate is on the bottom side at the edge The bottom side and/or the upper side of one of the two strips has a shape that supports gas flow and plasma flow transverse to the transport direction of the substrate. . 2. The substrate according to claim 2, characterized in that the substrate is disposed directly at the edge of the substrate and parallel to the (four) strips disposed between the Wei and the (four) strips. The struts and cross struts are wider. 3 Yugen ^ please patent scope 丨 or 2 esaki's substrate NZ, which is special to seven, not directly on the silk slab _ edge of the horizontal miscellaneous on the upper / / bottom side has at least - generous The groove which is the longest stretched to be distributed, 仏 according to the feature of the substrate described in item i or 2 of the full-time, in the non-direct surface of the substrate, the inclined strip disposed on the upper side and the bottom side has at least - A piece of chess that is distributed along the longest length of the cross-section, please delete 3 and 4 as described - the substrate carrier, which is not directly in the county __ Wei Mi (4) cross struts > some in Yokohama The upper side has a material portion and the 201246431 on the bottom side of the money stay has a groove, or conversely, the bottom side has a raised portion which is distributed. Having a groove on the upper side of the cross struts and extending the longest stretch along the cross struts in the yoke and the bulging portion, characterized in that the substrate is described in item 6, characterized in that The material is made of a material that is stable in shape, preferably from a carbon fiber. According to the seventh aspect of the present invention, the material of the inner core until the shape is stable is forming milling. of. The substrate carrier' according to any one of the preceding claims, wherein the substrate is supported in a manner that wraps around all edges and mitigates the plasma entrapment. 10. The substrate carrier according to any of the preceding claims, wherein the wire plate is supported on the wire by means of age/or hook, and the plasma is surrounded by the substrate The spacing between the longitudinal strut or the cross strut is minimized and mitigated. 12
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