201245112 六、發明說明： 【發明所屬之技術領域】 本發明係關於作為碳佈植源之自潔化合物。 【先前技術】 在現今社會中’半導體之使用變得更加普遍。例如，半 導體用於曰常用品’涉及可程式化咖_機、電信裝置及快 速電腦。縮小裝置結構之能力’尤其試圖達到<32 nm裝置 技術仍係目標。然而，達到越來越小尺寸之需求變得越來 越難以滿足。 在減小的接面深度製造中，達到較小裝置尺寸之一組件 稱為超淺接面（USJ)。然而，形成USJ特性面臨諸多挑戰。 特定言之’摻雜物通道穿透、瞬間增強擴散及藉由間隙部 位或空位之群集均呈示潛在困難。將該等傾向視為最終接 面深度及薄層電阻增加之原因。形成高摻雜物致動及具有 淺穿透摻雜物分佈之高接面陡度之基本挑戰仍然存在。此 外，新源極及汲極材料（諸如SiGe/SiGeC/Sic/SiSn/GeSn)之 後退火及接面形成後，消除剩餘效應、高度控制側擴散、 接面穩定性呈示進一步挑戰。 爲了應對該等挑戰，存在若干推薦方法及技術。其中一 方法為重金屬預先非晶化佈植（PAI)，諸如&及Xe離子或 含重C、F或N之分子離子，然後摻雜離子佈植，諸如b+、 BF/。PAI方法有助於克服與摻雜離子通道及摻雜離子固 溶度之有限性相關聯之難題。群集碳佈植材料可購自諸如 SemEquip，Inc，其可用於PAI方法。芳族碳佈植技術亦可 163397.doc 201245112 賭自Axcelis Technologies。彼等基於重破之pai方法在性 能及成本方面具有明顯優勢。其等亦用於製備源極及沒極 應力材料。然而’在此技術中，離子源室中烴膜殘餘物之 形成係一關鍵問題。 此項技術中仍需改良用於形成超淺接面之PAI。 【發明内容】 本發明提供用於半導體製造所用基板之pAI之改良方法 及程式。 【實施方式】 本發明係關於用於提供佈植離子以完成基板pAI之方法 及程式’特定言之’用於超淺接面之形成。 按照本發明，較佳地，離子源為碳原子，由Cn(n = 5_3〇) 分子源提供。該源可在液體次大氣壓包中提供，諸如可購 自Linde Group之Genii技術。較佳之Cn(n=5 3〇)源為曱 苯’其在束電流及晶圓特性方面顯示理想結果。然而，使 用cn(n=5_3())源亦導致在電離室中產生大量烴膜殘餘物。 需定期從該室清除該殘餘物，需工具停卫，從而導致半導 體製造時間及成本增加。 本發明係關於顯示自潔Cn(n=5_3〇)離子源特性之化 物。根據本發明之一實施例’該等化合物係顯示自潔, (11=5-30)離子源特性之單分子液體化合物。本發明化合 之各分子具有cn(n=5.3())離子源部份及至少一清^ 份，諸如含活性氧、氣、I、硫、氟、或類似種類之 分。當n=7時，化合物之Cn㈣，離子部份較佳為甲 163397.doc 201245112 離子（CtH/)。化合物液體蒸氣壓在低於i〇(rc溫度下應大 於1托，且較佳蒸氣壓在丨0。(：至loot：之溫度下大於5托且 小於100托。就C7化合物而言，電離後，質譜中C7離子高 度濃縮，質譜中C7離子（質量約91 amu，C7H7+)為最充足 離子峰。清潔劑電離後從母體分子解離並產生高度濃縮且 反應性中性或帶電自由基。然後，該等自由基與烴殘基反 應以形成揮發性氣體產物，諸如c〇2、c〇、H2〇、、 ch4 ' νη3、CC14或類似物。 根據本發明之第二實施例，可使用二元液體混合物，二 7C液體混合物包括“⑺”一㈨源，若需要〇7離子，諸如曱 苯，並混合不同清潔劑化合物。例如，清潔劑化合物可含 反應性氧官能基但並非C7離子源。操作時，清潔劑產生揮 發性產物，幫助避免室中形成烴膜殘餘物。清潔劑亦可產 生氧、氣、氮、或氟自由基以移除烴殘基。 對於可行性二元液體系統，Cn(n=5_30)源化合物及清除 劑化合物之蒸氣壓需良好匹配以阻止氣相濃度變化。在失 衡下會損及結果。例如，若清潔劑濃度增加，室將保持清 潔，但Cn(n=5-30)離子束強度降低，導致PAI製程有效性 之問題。另’若Cn(n=5-30)源濃度高於足量束強度所需， 則可鲍降低清潔劑之清潔能力，導致需停工清潔該室。 對於使用甲苯作為C7源之二元液體系統，諸多具有相當 蒸氣壓之清潔劑可用於本發明。特定言之，1-氣戊烷、環 戊胺、異丙基丁醚、異丁酸乙酯、過乙酸、3_曱基_2_ 丁醇 及2-甲基-1-丙醇之蒸氣壓足夠接近曱苯蒸氣壓以可用於本 163397.doc 201245112 發明。該等溶液提供優於單獨使用甲苯之結果。 根據本發明’作為PAI源之單自潔化合物之實例包括具 有含C7或C7Hx之組成的C7離子源部份之化合物，選自节 基氣（C6H5CH2C1)、乙酸苄酯（C9H|〇〇2)、芊 | 下丞乙基醚 ((^丨2〇)、甲酸节 s旨（C6H5CH2〇och)或节硫醇（C6H5CH2SH)。 該等化合物亦可用作用於其它碳佈植之碳源。 根據本發明之化合物可以多種不同方式封裝。例如，201245112 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to a self-cleaning compound which is a source of carbon cloth. [Prior Art] In today's society, the use of semiconductors has become more common. For example, semiconductors are used in general-purpose items, including programmable coffee machines, telecommunication devices, and fast computers. The ability to shrink the structure of the device' is particularly an attempt to achieve the <32 nm device technology. However, the need to reach smaller and smaller sizes has become more and more difficult to satisfy. In reduced joint depth manufacturing, one of the components that achieves a smaller device size is called the ultra-shallow junction (USJ). However, the formation of USJ features faces many challenges. In particular, dopant channel penetration, transient enhanced diffusion, and clustering by gap sites or vacancies present potential difficulties. These tendencies are considered as the cause of the final joint depth and the increase in sheet resistance. The fundamental challenge of forming high dopant actuation and high junction steepness with shallow penetration dopant distribution remains. In addition, the post-annealing and junction formation of new source and drain materials (such as SiGe/SiGeC/Sic/SiSn/GeSn) further eliminates residual effects, height-controlled side diffusion, and junction stability. In order to cope with these challenges, there are several recommended methods and techniques. One of the methods is heavy metal pre-amorphization implant (PAI), such as & and Xe ions or molecular ions containing heavy C, F or N, and then doped ion implantation, such as b+, BF/. The PAI method helps to overcome the challenges associated with the limited nature of doped ion channels and doping ion solid solubility. Cluster carbon implant materials are commercially available, for example, from SemEquip, Inc., which can be used in the PAI process. Aromatic carbon implant technology can also be gambled from Axcelis Technologies 163397.doc 201245112. They have significant advantages in terms of performance and cost based on the broken pai method. They are also used to prepare source and immersion stress materials. However, in this technique, the formation of hydrocarbon film residues in the ion source chamber is a critical issue. There is still a need in the art to improve the PAI used to form ultra-shallow junctions. SUMMARY OF THE INVENTION The present invention provides an improved method and program for pAI for a substrate used in semiconductor manufacturing. [Embodiment] The present invention relates to a method for providing implant ions to complete a substrate pAI and a program 'specifically' for the formation of ultra-shallow junctions. According to the invention, preferably the ion source is a carbon atom provided by a Cn (n = 5_3 〇) molecular source. The source may be provided in a liquid sub-atmospheric package, such as the Genii technology available from Linde Group. Preferably, the Cn (n = 5 3 〇) source is 曱 benzene' which shows desirable results in terms of beam current and wafer characteristics. However, the use of a cn (n=5_3()) source also results in the production of large amounts of hydrocarbon film residues in the ionization chamber. The residue needs to be removed from the chamber on a regular basis, requiring tools to be shut down, resulting in increased manufacturing time and cost of the semiconductor. The present invention relates to a chemical which exhibits the characteristics of a self-cleaning Cn (n = 5_3 〇) ion source. According to an embodiment of the invention, the compounds are self-cleaning, single-molecule liquid compounds of (11 = 5-30) ion source characteristics. Each molecule of the compound of the invention has a cn (n = 5.3 ()) ion source portion and at least one moiety, such as containing reactive oxygen, gas, I, sulfur, fluorine, or the like. When n=7, the Cn (4) of the compound, the ionic moiety is preferably A 163397.doc 201245112 ion (CtH/). The compound liquid vapor pressure should be greater than 1 Torr (the rc temperature should be greater than 1 Torr, and preferably the vapor pressure is 丨0. (: to loot: the temperature is greater than 5 Torr and less than 100 Torr. For the C7 compound, ionization Afterwards, the C7 ion in the mass spectrometer is highly concentrated, and the C7 ion (mass about 91 amu, C7H7+) in the mass spectrum is the most abundant ion peak. The detergent dissociates from the parent molecule after ionization and produces highly concentrated and reactive neutral or charged radicals. And the free radicals react with the hydrocarbon residue to form a volatile gas product, such as c〇2, c〇, H2〇, ch4′νη3, CC14 or the like. According to the second embodiment of the present invention, two may be used. a liquid mixture, a two 7C liquid mixture comprising a "(7)"-(9) source, if desired, a 〇7 ion, such as toluene, and mixing different detergent compounds. For example, the detergent compound may contain a reactive oxygen functional group but not a C7 ion source During operation, the cleaning agent produces volatile products that help to avoid the formation of hydrocarbon film residues in the chamber. The cleaning agent can also generate oxygen, gas, nitrogen, or fluorine radicals to remove hydrocarbon residues. , C n (n = 5_30) The vapor pressure of the source compound and scavenger compound needs to be well matched to prevent changes in the gas phase concentration. The result is compromised by the imbalance. For example, if the concentration of the detergent increases, the chamber will remain clean, but Cn(n) =5-30) The ion beam intensity is reduced, which leads to the problem of the effectiveness of the PAI process. In addition, if the Cn (n=5-30) source concentration is higher than the sufficient beam strength, the abalone can reduce the cleaning ability of the cleaning agent. This leads to the need to stop working to clean the chamber. For binary liquid systems using toluene as the C7 source, many cleaners with comparable vapor pressure can be used in the present invention. In particular, 1-cyclopentane, cyclopentylamine, isopropyl butyl The vapor pressures of ether, ethyl isobutyrate, peracetic acid, 3_mercapto-2-butanol and 2-methyl-1-propanol are sufficiently close to the vapor pressure of toluene to be used in the invention of 163397.doc 201245112. The solution provides a result that is superior to the use of toluene alone. An example of a single self-cleaning compound as a source of PAI according to the present invention includes a compound having a C7 ion source moiety having a composition of C7 or C7Hx selected from a group base gas (C6H5CH2C1), Benzyl acetate (C9H|〇〇2), 芊 | lower 丞 ethyl ether ((^丨2 ), Section s purpose formic acid (C6H5CH2〇och) or Section thiol (C6H5CH2SH). The compounds may also be used as a carbon source of other carbon implantation. The compounds of the present invention may be packaged in many different ways. For example,
Linde Group之Genii技術以在圓柱體中之標準次大氣壓離 子佈植源提供化合物，該圓柱體具有薄膜分離器及圓柱體 壁上之溫度控制並高達l〇(TC之遞送管線。另’可使用一 惰性載氣，其中該惰性氣體在室溫下，流經鼓泡器配置中 液體源，’在室溫下’化合物源可藉由利用鼓泡器與 液體質量、流量控制器之直接液體注射進行遞送。一般而 言，若遞送純液體氣相，本發明之化合物需在5〇ΐ至 100°c下受熱。 本發明提供諸多優勢。本發明之化合物係自紅7佈植 源’其提供高C7H7離子束強度及高度浪縮自潔自由基。對 於本發明之單分子液體化合物實施例，組份分離並非必 需，此使得加工更簡易且更經濟。此外，本發明之單分子 液體化合物呈現單-蒸氣㈣線，減少㈣參數並簡化加 工本發明之化合物提供自潔特性，並因此可實現更長離 子室壽命且可減少或消除對停卫進行清潔之需求。由此， 降低製造及操作成本。 據預計，本發明之其它實施例及變化對擅長者來說，按 163397.doc .201245112 照先前描述將變得顯而易見，該等實施例及變化同樣包含 於附加申請項所述之本發明範圍内。例如，本發明之化合 物可用於佈植半導體裝置、佈植結構工程材料、或佈植光 伏=材料。本發明之變化亦包括除C7之外的其它基於碳的 163397.docLinde Group's Genii technology provides compounds with a standard sub-atmospheric ion implantation source in a cylinder with a membrane separator and temperature control on the cylinder wall and up to 1 〇 (TC delivery line. An inert carrier gas, wherein the inert gas flows through the liquid source in the bubbler configuration at room temperature, and the 'source at room temperature' can be injected directly from the liquid mass and flow controller using a bubbler Delivery. In general, if a pure liquid gas phase is delivered, the compound of the invention needs to be heated at 5 to 100 ° C. The present invention provides a number of advantages. The compounds of the present invention are derived from the source of the red 7 plant. High C7H7 ion beam intensity and high wave self-cleaning free radicals. For the single molecule liquid compound embodiment of the present invention, component separation is not necessary, which makes processing easier and more economical. Furthermore, the single molecule liquid compound of the present invention is presented. Single-vapor (four) line, reducing (d) parameters and simplifying processing The compounds of the present invention provide self-cleaning properties and thus achieve longer ion chamber life and can reduce or eliminate stoppage The need for cleaning is reduced. Accordingly, the manufacturing and operating costs are reduced. It is contemplated that other embodiments and variations of the present invention will become apparent to those skilled in the art, as described in the foregoing description, 163, 397.doc. And variations are also included within the scope of the invention as set forth in the appended claims. For example, the compounds of the invention can be used to implant semiconductor devices, implant structural materials, or implant photovoltaics = materials. Variations of the invention also include C7 Other carbon-based 163397.doc