TW201233814A - Alloy for seed layer of magnetic recording medium, and sputtering target material - Google Patents

Abstract

Provided is an alloy for a seed layer of a magnetic recording medium, wherein an Ni-based intermediate layer on a soft magnetic underlayer (SUL) has magnetism, and the magnetic permeability can be increased. This alloy contains: one or more kinds of M1 elements selected from the group consisting of W, Mo, Ta, Cr, V and Nb, in 2 to 20 at% of the alloy; one or more kinds of M2 elements selected from the group consisting of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, in 0 to 10 at% of the alloy; and at least two kinds of Ni, Fe and Co as the balance. The amount of Ni, Fe and Co satisfies (i) the ratio of Ni:Fe:Co = 98 to 20:0 to 50:0 to 60, and Fe+Co = 1.5, or (ii) the ratio of Ni:Fe:Co = 98 to 20:2 to 50:0 to 60, when expressed by at% relative to the total amount of Ni+Fe+Co.

Description

201233814 VI. Description of the invention: [Reciprocal reference to the application for the application] The present invention claims to be based on the priority of the application number 2010-259 7 13 of January 20, 2010 and the application number 2011-94594 of April 2011, The description of the present invention is incorporated by reference. [Technical Field of the Invention] The present invention relates to a Ni-Fe-Co-based magnetic recording medium which is used for perpendicular magnetic recording. [Prior Art] In recent years, magnetic recording media have been made possible by the large capacity of the perpendicular magnetic recording drive. For example, the perpendicular recording method in which the recording density is high in the past has been achieved. The direct magnetic recording method means a method in which the easy magnetization axis is opposed to the media surface in the magnetic film and is set to a high density in the vertical direction. In the perpendicular magnetic recording method, the recording of the magnetic recording film layer and the soft magnetic film layer has been developed, and a recording medium for a soft magnetic layer and a magnetic or underlying film layer has been developed. Japanese Patent No. 2, filed on the Japanese Patent Application Serial No. 2, the entire disclosure of the entire disclosure of the use of the seed layer in the recording medium to make the sub-layers significantly improve the alloy and the sputtering target. The recording medium with high recording density can be further put into practical use. Here, the method of forming the perpendicular magnetic recording medium is suitable for recording media with a recording density between the media recording layers. The Ni-W-based alloy which is disclosed in Japanese Laid-Open Patent Publication No. 2009-155722 (Patent Document 1). The Ni-W alloy is not added with a magnetic group VIII, but is added with a non-magnetic element of group IVa (Ti, zr, Hf), group Va (V, Nb, Ta), group VI a (C r, Μ o, W), Vila (Mn, Tc, Re), 1111) (8, 1, 1, 3, 111, D1), IVb (C, Si, Ge, Sn, Pb) magnetic. Here, one of the characteristics required for the seed layer, as the name suggests, is to control the orientation of the layer formed on the seed layer so that the easy magnetization axis of the magnetic film recording the magnetic information is oriented perpendicularly to the media surface, The seed layer itself has a separate fcc configuration 'and the face parallel to the media face is oriented at the (111) face. Further, in order to increase the recording density, it is necessary to make the crystal grain size of the magnetic film as small as possible, and therefore it is desirable to have a smaller crystal grain size than the seed layer. SUMMARY OF THE INVENTION On the other hand, in recent years, as a method for improving the magnetic recording characteristics of a hard disk drive, a method of making a seed layer magnetic has been discussed. However, as described above, the alloy for seed layer described in Patent Document 1 is non-magnetic, and ruthenium cannot be referred to as an alloy for a seed layer having magnetic properties. Therefore, it has been demanded to develop an alloy for a seed layer having the properties required for the alloy for a seed layer as described above and having magnetic properties. Moreover, as for the large difference between the soft magnetic layer and the seed layer, an amorphous type which is useful for reducing noise is required in the soft magnetic layer, but the seed layer requires the effect of controlling the orientation of the layer formed on the seed layer, and requires It has high crystallinity opposite to non-quality amorphous type. -6-201233814 The present inventors have now found that the seed layer is made magnetic by adding Fe or Co having a magnetic Group VIII element, and the magnetic property can be improved by reducing the bridge coercivity in the (u丨) plane direction. Conductivity. Therefore, the object of the present invention is to provide an alloy for a seed layer of a magnetic recording medium which has magnetic properties on a Ni-based intermediate layer over a soft magnetic underlayer film (SUL) and which can improve magnetic permeability, and a sputtering target using the same . According to the same aspect of the present invention, there is provided an alloy which is an alloy for a seed layer of a magnetic recording medium, which comprises one or more selected from the group consisting of W, Mo, Ta, Cr, V and Nb. The M1 element accounts for 2 to 20 at% of the foregoing alloy, and is selected from the group consisting of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, (: and Ru). Or two or more kinds of M2 elements occupy 0~10 0 at% of the foregoing alloy, and the rest are Ni, Fe and Co, and are Ni:Fe : C〇= relative to at% of the total amount of Ni + Fe + Co 98~20: 0~50: 0~60 and the ratio of Fe + C 〇 2 1 · 5. According to another aspect of the present invention, there is provided an alloy which is an alloy for a seed layer of a magnetic recording medium, which contains One or more M1 elements selected from the group consisting of Mo, Ta, Cr, V, and Nb account for 2 to 20 at% of the foregoing alloy, from Al, Ga, In, Si, Ge, Sn, Zr, Ti One or two or more kinds of M2 elements selected from the group consisting of Hf, B, Cu, P, (and R) account for 0 to 10 at% of the foregoing alloy, and the rest are Ni, Fe and Co to be relative to Ni +At + 2 of the total amount of Fe + Co 2 01233814 is a ratio of Ni:Fe: C〇=98~20: 2~50: 0~60. According to another aspect of the present invention, there is provided a sputtering target which is composed of the above alloy. In the same manner, a magnetic recording medium comprising a seed layer made of the above-described alloy is provided. [Embodiment] Hereinafter, the present invention will be specifically described. Unless otherwise indicated, "%" in the present specification means at%. The seed layer of the magnetic recording medium is composed of an alloy containing one or more selected from the group consisting of W, Mo, Ta, Cr, V, and Nb, and 2 to 20 at% of the alloy. One or two or more kinds of M2 elements selected from the group consisting of A, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Ru account for 0 to 10 at% of the alloy. The balance is at least two of Ni, Fe and Co, preferably consisting essentially of these elements and inevitable impurities, and more preferably consisting of such elements and unavoidable impurities. , the respective amounts of Ni, Fe, and Co are relative to the at% of the total amount of Ni + Fe + Co, (i) Ni : Fe : Co = 98~20 : 0 to 50 : 0 to 60 and the ratio of Fe + Co21.5, or (ii) Ni : Fe : Co = 98 〜 20 : 2 〜 50 : 0 ～ 60 The ratio. In the alloy of the present invention, when the ratio of Ni, Fe and Co is represented by Ni : Fe : Co = a : β: γ, the atomic ratio a of Ni is 98 (more strictly 98.5) 〜20, preferably 98 (more) Strictly 98.5) ~ 60. When a exceeds 98.5, β + γ becomes less than 1.5 and the coercive force becomes high. When a does not reach 20, the coercive force is also high as in 201233814.

Fe is an element which lowers the coercive force and is also an element which improves the film orientation. When Ni: Fe: Co = a: β: γ, the atomic ratio of Fe is 0 to 5 Å, preferably 2 ~50%' better for 10~40. When β exceeds 50, the coercive force becomes high.

Co is an element which reduces the coercive force in the (111) direction, and when Ni:Fe: Co = a: β: γ, the atomic ratio γ of 'Co is 〇 60, preferably 40 or less. When γ exceeds 60, the coercive force becomes high. The alloy of the present invention contains 2 to 20 at% of the total of the alloy, preferably 5 to 15 at% of the group selected from the group consisting of W, Mo' Ta, Cr, V and Nb. element. The M1 element is a bcc-based metal having a high melting point, and is added to the alloy system of the feel by the component range specified in the present invention, although the mechanism is not clear, but the desired pair of the seed layer can be improved (1 11 ) An element that is oriented and refines the crystal grains. Therefore, when the amount of Μ 1 element is less than 2%, the effect is insufficient, and when it exceeds 20%, the compound is precipitated or amorphous. Since the alloy for the seed layer is required to be a single phase of fee, the range of the amount of the element of M1 is set as described above. In particular, it is preferable to increase the orientation of the (1 1 1 ) plane by W and Mo. Therefore, it is preferable to add one or two of W and Mo, and to add one or more of Cr, Ta, V and Nb. The reason for this is advantageous because the melting point of the combination of Ni and the high melting point bcc metal 'Mo or W is higher than Cr. Further, the addition of Ta, V or Nb has an effect of improving the amorphous form as compared with W and Mo, which is disadvantageous for the formation of the f c c phase required for the seed layer. When C r is added more than 5% as desired, it is advantageous in terms of orientation. -9 - 201233814

The alloy of the present invention contains 0~l〇at% of the alloy, preferably 1~i〇at% 'better 5% from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B One or two or more M2 elements selected from the group consisting of Cu, P, C, and Ru are used as arbitrary elements. The M2 element is an element that orients the (111) plane, and is an element that refines crystal grains. However, when the amount of the M2 element exceeds 1%, a compound is generated or may be amorphous. Further, the total amount of Ml + M2 is preferably 2 5 a t % or less, and more preferably 2 0 a t % or less. EXAMPLES Hereinafter, the present invention will be specifically described by way of examples. Generally, a seed layer in a perpendicular magnetic recording medium is sputtered with a sputtering target having the same composition as that of the composition, and is formed by film formation on a glass substrate. This allows the film formed by sputtering to be rapidly cooled. The test material of the present invention is a quenched ribbon produced by a single roll quenching device. It is easy to evaluate the influence of the composition on the characteristics of the film which is actually quenched by sputtering and formed into a film by the liquid quenching ribbon. [Preparation of the quenched ribbon] 30 g of the raw material of the composition of Table 1 was decompressed in a water-cooled copper casting mold having a diameter of 10 mm and a length of 40 mm, and arc-dissolved in Ar to form a molten base material for the quenched ribbon. The production condition of the quenched ribbon is to set the dissolved base material in a single-roller in a quartz tank of 15 mm in diameter. The diameter of the melt metal discharge nozzle is set to 1 mm, the ambient pressure is 61 kPa, the spray differential pressure is 69 kPa, and the copper roll. The rotation number of 3 00 mm) was 3 000 rpm, and the melt metal discharge was performed at a distance of 0.3 mm between the copper roll and the melt metal-10-201233814 discharge nozzle. The discharge temperature is set such that each dissolved base material is melted and dropped. The quenched ribbon thus produced was used as a test material, and the following items were evaluated. [Evaluation of Coercive Force] For the coercive force type of the vibration sample type, the quenching tape was attached to the sample stage with a double-sided tape, and the coercive force of the quenched ribbon was measured by an initial application magnetic field of 144 kA/m. When the coercive force is 300 Å/m or less, it is represented by 〇, and when it exceeds 300 A/m and 500 A/m or less, it is represented by Δ, and when it exceeds 500 A/m, it is represented by X. [Evaluation of Saturation Magnetic Flux Density] The saturation magnetic flux density of the quenched ribbon was measured by applying a magnetic field of 12 〇〇 kA/m ' in a VSM apparatus (vibration sample type magnetometer). The weight of the test material was about 15 mg, and it was evaluated as 〇 at 0.2 T or higher, and was evaluated as X at less than 〇·2Τ. [(1 1 1 ) plane orientation evaluation] The seed layer formed by sputtering is a fee structure. The seed layer is oriented (200) by quenching. Generally, if randomly oriented, the X-ray diffraction intensity I (200) of the ij (ill) plane and the (200) plane is higher than I (1 1 1 ). Therefore, the orientation of the (1 Π) plane of the quenched ribbon was evaluated by the following method.

A test piece was attached to the glass plate with a double-sided tape, and a diffraction pattern was obtained by an X-ray diffraction device. At this time, the test piece was attached so that the measurement surface became the contact surface of the copper roll of the quenched ribbon. The measurement was carried out by taking the Cu-α line as an X-ray source at a scanning speed of 4 V minutes. The intensity ratio of the X-ray intensity I (1 1 1 ) to the X-ray intensity I (200) of the (200) plane of the X -11 - 201233814 diffraction of the (丨1 1 ) plane of the refractive pattern is 1 ( 111 ) /1 (200) Those who do not reach 0.7 are recorded as X, and those who are 0.7 or higher are recorded as 〇. The person who produced the compound and the amorphous type were referred to as X. [Evaluation of crystal grain] The roll direction of the microstructure image of the cross section of the quenched ribbon was measured by the microscopic test method of "Steel crystal grain size" in accordance with JIS G05 5 1 "Microscopic test method for steel grain size". When P / L t is 1.0 or more, it is marked as 〇, 0 · 5 or more, and less than 1 · 〇 is Δ, and less than 0.5 is regarded as X. 201233814 [Table].] Table 1 flo composition (at%) coercive force saturation flux density directional crystal grain size note 1 (Ni 2 Fe) -2W Δ 〇〇Λ 2 (Ni 2Fe) -2W-3Mo 〇 (;{ (Ni 1 OFe 1 OCo) -5W- 1 A 1 〇〇〇〇(Ni 2 OFe 1 OCo) - 5W- 1 Λ l 〇〇〇〇5 (Ni 3 OFe 1 OCo) -5W- 1 A 1 〇〇〇〇6 (Ni 4 OFe 1 OCo) -5W-]A 1 〇〇〇〇7 (Ni 50Fe I OCo) -5W-1 A1 〇〇〇〇8 (Ni 1 OFe 2 OCo) - 5W- 1 A 1 〇〇〇〇9 (Ni 2 OFe 2 OCo) -5W- 1 A 1 〇〇〇〇10 (Ni 30Fe20Co) -5W-1 A1 〇〇〇〇11 (Ni 4 OFe 2 OCo) -5W- 1 Λ 1 〇〇〇〇12 (Ni50Fe20Co) -5W-1 A1 Burst 13 (Ni 1 OFe 3 OCo) -5W- 1 A 1 〇〇〇〇14 (Ni 20Fe30Co) -5W- 1 A] Ο 〇〇〇 15 (Ni 3 OFe 3 OCo) -5W- 1 A 1 〇〇〇〇明16 (Ni 4 OFe 30C〇) -5W- 1 S i 〇〇〇〇17 (Ni50Fc30Co) -5W - 1 A 1 Δ 〇〇〇18 (Ni 1 0Fe4 OCo) -5W-1A1 Example 19 (Ni 2 OFe 4 OCo) -5W- 1 A 1 〇〇〇〇 20 (Ni 3 0Fe4 OCo) -5W- l A1 〇〇〇〇21 (Ni 4 OFe 4 OCo) -5W- 1 S i Δ 〇〇〇22 (Ni 1 OFe 5 OCo) -5W-1AI Δ 〇〇〇 23 (Ni 20Fe50Co) -5W-1A1 Δ 〇〇〇24 (Ni 30Fe50Co) -5W-1A1 Δ 〇〇〇25 (Ni 1 0Fe60C〇) -5W-1A1 Δ 〇〇〇26 (Ni20Fe60Co) -5W- 1 S i Δ 〇〇〇-13- 201233814 [Table 2] Table u No Composition (at9i) Coercive force Saturation flux density Directional crystal grain size 27 (Ni 5Fe) -5W - 1 A 〇〇〇 Δ 28 ( Ni 1 OFe) - 5W-I Al 〇〇〇Δ 29 (Ni 1 5Fe) -5W-1 A1 〇〇〇Δ 30 (Ni 1 5Fe) -5Mo-lCu 〇〇〇〇31 (Ni 1 5Fe) - 5Ta - 1 A 1 〇〇〇〇32 (Ni 1 5Fe) -5Cr-lAl 〇〇〇〇S3 (Ni 20Fe) -5V-1 AI 〇〇〇〇34 (Ni 30Fe) -5Nb-lAl 〇〇〇〇35 (Ni40Fe)-2W-5M〇-lAl 〇〇〇0 36 (Ni 4 OFe) -2W-5Ta-1 A] 〇〇〇〇37 (Ni 4 OFe) -2V-5Cr-l Al 〇〇〇〇38 (Ni40Fe) -2Nb-5V-lAl 〇〇〇〇39 (Ni40Fe)-2Mo-5Nb-lAl 〇〇〇〇40 (Ni50Fe) - 2W-lMo-3Ta-lAl Δ 〇〇 41 (Ni 5 OFe) - 2W- IMo - 1 Ta - 1 C r - 1 Λ 1 Δ 〇〇〇42 (Ni 5 OFe) -2W-IMo-1Cr- ]V 1 Λ 1 Δ 〇〇〇43 (Ni50Fe )—2W-lM〇-lCr—lV-lNb Δ 〇〇〇44 (Ni 4 0Fe) - 2W - IMo-lCr-iV -JNb-lAI Δ 〇〇〇45 (Ni40Fe) - 2W-lMo-lCr-lV -lNb Δ 〇〇〇 46 (Ni 5 OFe) - 2 OW ο 〇〇Δ 47 (Ni 5 OFe) - 2 OMo ο 〇〇Δ 201233814 [Table 3] Table 3

No composition (at%) Coercive force saturation breaking through 虔丨 orientation β: crystallization-particle size remark 43 (Ni 5 OFe) -2W- 1 OA 1 Δ 〇〇〇4!) (Ni 5 OFe) -2W - 5Ga Δ 〇〇〇50 (Ni 5 OFe) -2W- 5 I n Δ 〇〇〇 51 (Ni 5 OFe) - 2VV-5S i △ 〇Ο 〇 52 (Ni 5 OFe) -2W~ 5Ge Δ 〇ο 〇53 <Ni 50Fe) -2\V-5Sn Δ 〇〇〇54 (Ni 5 OFe) -2W- 1 OZr 〇〇〇ο 本 55 (Ni 5 OFe) -2W-5Ti Δ 〇〇〇56 (Ni 5 OFe) -2W-5Hf Ο 〇〇〇57 (Ni 50Fe> - 2λν- 1 OB 〇〇〇〇58 (Ni 5 0Fe) - 2W - 5Cu 〇〇〇〇59 (Ni 5 0Fe) -2W-5P Δ 60 (Ni 5 OFe) -2W - 1 C Δ 〇〇 △ 61 (N i 4 OFe) -2W - 3Ru Δ 〇〇 △ 62 (Ni 50Fe) -2W-IA1-Ga Δ 〇〇ο 63 (Ni 5 0Fe) -2W-1A1-Ga-1 In Δ 〇〇0 64 (Ni 5 OFe) - 2W ΙΛΙ-Ga-lIn.-lSi Δ 〇〇Δ Ming 65 (Ni 5 OFe) - 2W - 1AI- IGa-1 In- lSi-1 (3⁄4 △ 〇〇A 66 (N i 5 OFe) - 2W - 1A1- ICa- 1 In- ISi- ICe- ISn Δ 〇〇△ 67 (Ni 5 OFe) - 2« - 1 A] - IGa- 1 In- 1 Si- ] 1 Sn- 1 Zr Δ 〇〇〇 68 (Ni 5 OFe) - 2W - 1 Si- lGe- 1 Sn- 1 Zr- 1 Ti Δ 〇〇Δ 69 (Ni 5 OFe) -2W - ISi- IGa- ISn - IZr- ITi - lHf Δ 70 70 (Ni 5 OFe) -2W 1 S i - 1 G e - 1 S n — 1 Z r-ITi-lHf-lB 〇〇〇〇71 (Ni 5 OFe) -2W-lSi-Ge-lSn-lZr* ITi-Hf-1B-1Cu 〇〇〇〇72 (Ni 5 0Fe) -2W · 1 Zr-1 Ti-1 Hf-1 B -ICu-lP Δ 〇〇〇 73 (Ni50Fe)-IW-lZr-lTi-lHf-IB-1Cu*1P-1C 〇〇〇〇74 :N i 5 OFe) -2W-lZr-lTi-IHf-lB-lCu IP-IC-IRu 〇〇 〇〇-15- 201233814 [Table 4] Table 4

No Component composition (at%) Coercive force Saturation flux density Directional crystal grain size Remarks 75 (Ni 2Fe5Co) -2W-1A1 Δ 〇〇ο 76 (Ni20Fel0Co) - 5Mo-lSi 〇〇〇Δ 77 (Ni 3 OFe 1 OCo) -5M〇- 1 S i 〇〇〇Δ 78 (Ni 20Fe20Co) - 5Mo-lSi 〇〇〇Δ 79 (Ni20Fe20Co)-10Cr-5M〇-lSi 〇〇〇〇80 (Ni 20Fe 6〇Co) -5W-1A1 Δ 〇〇〇81 (Ni50FeZ0Co) - 5W- 1 A 1 Δ 〇〇〇 82 82 (Ni 1OFe 1 OCo) - 5W-lNb 〇〇〇〇83 (Ni50Fel0Co) - 5W-5Nb 〇〇〇Δ 84 (Ni 1OFe 2 OCo) -5W-3Cr Burst 85 (Ni50Fe20Co)-5W-3Mo 〇〇〇〇86 (Ni10Fe30Co)-5W-lTa 〇〇〇Δ Ming 87 (Ni 50Fe30Co) -5W-1A1 Δ 〇ο Δ 88 (Ni10Fe40Co)-5W-5Mo 〇〇〇Δ 89 (Ni 1 0Fe50Co) — 5W- 5 V Δ 〇〇 △ Example 90 (Ni 30Fe50Co) —5W—5Cr Δ 〇〇Δ 91 (Ni 2 OFe 6 OCo) -5W-5Ta Δ 〇〇Δ 92 (Ni5Fe) - 5W-lSi 〇〇〇〇93 (Nil〇Fe)-5 W- 1 S i 〇〇〇〇94 (Ni 1 5 F e) - 5W - 1 S i 〇〇〇〇95 (N i 5 0 F e) - 1 〇W - 1 OMo - 1 S i 〇Δ 〇〇201233814 [Table 5] Table 5 No Composition (at 6) Coercive force Saturation flux density Directional crystal grain size 9 6 Ni X 〇XX 9 7 Ni 2Fe 〇 〇XX 9 8 (Ni 6 OFe) -5W-1A1 X 〇〇〇9 9 (Ni 50Fe) -1W-15A1 Δ 〇X 〇100 (Ni 5 OFe) -30W - XX 〇101 (Ni50Fc) - lW-16Zr 〇〇X 〇102 (Ni50Fe) -1W-15B 〇〇X 〇1丨]3 (Ni 1 OFe 7 0C〇) -5W- 1Λ1 X 〇〇〇104 (Ni 60Fe20C〇) -5AV- 1 A 1 X 〇 〇〇 ratio 105 (Ni 2 OFe 2 OCo) - 1 Cr X 〇 XX 106 (Ni20Fe20Co) -25Cr XXXX 1C7 (Ni 2 OFe 2 OCo) -IMo κ 〇 XX 108 (N i 2 OFe 2 OCo) -2 5Mo κ XXX 109 (Ni20Fe20Co)-lTa X 〇XX I1D (Ni30Fe30C〇) - 25 T a XXXX is 11;! (Ni 2 OFe 2 OCo) -IV X 〇XX lli! (Ni 2 OFe 3 OCo) -2 5 VXXXX lli ; (Ni 2 OFe 2 OCo) - INb X 〇 XX 114 (Ni 3 OFe 2 OCo) -2 5Nb XXXX 115 (Ni30Fe20Co) - 5W-1 5Ca 〇〇XX 116 (Ni 3 0 Fe 3 OCo) -5W- 1 5 I n 〇〇 XX Example 117 (Ni30Fe20Co)-5W-15Si 〇〇XX 118 (Ni 3 OFe 2 OCo) -5W- I 5Ge 〇〇XX 119 (Ni 3 OFe 3 OCo) -5W- 1 5T i 〇〇XX 120 (Ni 2 OFe 2 OCo) -5W-1 5Hf 〇〇XX 121 ( Ni30Fe20Co) -5W- 1 BCu 〇〇XX 122 CNi 2 OFe 2 OCo) -5W- 1 5P 〇〇XX 123 (Ni30Fe30Co) -5W- 1 5C 〇〇XX 124 (Ni30Fc20Co) -5W- 1 Π R u 〇〇 ' XX Note) The bottom line is outside the conditions of the invention -17- 201233814 [Table 6] Table 6 No Composition (at%) Coercive magnetic saturation magnetic flux density Directional crystal grain size 125 (Ni 5Co) - 2W-1 A1 Δ 〇〇〇 126 (Ni 2Co) -2Cr - 1Λ1 Δ Δ 〇〇 127 (Ni 2Co) -5. lCr-lAl Δ Δ 〇〇 128 (Ni 4 OCo) -5. 7Cr-lAl-]Si Δ 〇 〇〇129 (NilCo1Fe)-2W-1A1 Δ 〇〇〇130 (Ni 1 Co 1. 5Fe) -2W-1 A 1 Δ Δ 〇〇131 (Ni 1 Co2Fe) -2Cr - 1 A 1 Δ 〇〇〇 132 (Ni 0. 8Co 1. OFe) -2Cr-1 A! Δ 〇〇〇 133 (N i 0. 6Co 1. OFe) -2Nb-1 A 1 Δ Δ 〇〇 134 (Ni 0. 5 C o 1. OFe) - 2 Μ o Δ Δ 〇〇 135 (Ni 0. 8C 〇 0. 7Fe) - 1 Mo - 1 W Δ Δ 〇〇 136 (N i 0. 7C o 0. 8Fe) - IMo-lW Δ Δ 〇〇137 (Nil. OCo 0. 5Fe) -2Ta Δ Δ 〇〇 138 (Nil. 5Co 0. 5Fe) -2Ta . Δ Δ 〇〇 139 (Ni 0. 6C 〇 0. 9Fe) -IMo-lW Δ Δ 〇〇140 (Ni 0. 3Col. 2Fe) - IMo-lW Δ Δ 〇〇 141 (Ni 0. ICol. 4Fe)-lM〇-*lW Δ Δ 〇〇 142 (Ni 0. 9C〇0. 6Fe) - 2V Δ Δ 〇〇f 143 (Nil. 2C〇0. 3Fe) -2V Δ Δ 〇〇 144 (Nil. 4 C o 0. 1 F e) -2 V Δ Δ 〇〇 145 (Nil. 5 Co) - 2Ta Δ Δ 〇〇 146 (Nil. 5Fe) -2Ta Δ Δ 〇〇 147 (Nil. 0C 〇0. 5 F e) - 2Ta Δ Δ 〇〇 148 (Nil. OCoO. 9Fe) -2Mo Δ Δ 〇〇149 (Ni 0. 9C o 1. OFe) - 2Mo Δ Δ 〇〇 150 (Nil. 2C 〇 0. 7Fe) -2Cr Δ Δ 〇〇 151 (Nil. 3C 〇 0. 6Fe) - 2Cr Δ Δ 〇〇 152 ( Nil. 5C〇0. 4Fe) -2Cr Δ Δ 〇〇 153 (Nil. 7C o 0. 2Fe) -2Cr Δ Δ 〇〇 154 (Ni 0. 9 Pel. 0Co)-2Nb Δ Δ 〇〇 155 (Nil. 2F e 0. 7Co) -2Nb Δ Δ 〇〇201233814 [Table 7] Table 7

No Component composition (at%) Coercive force Saturation flux density Directional crystal grain size Remarks 156 (Ni 1. 3C 〇 0. 6Fe) -2Nb Δ Δ 〇〇 157 (Nil. 5FeO. 4Co) -2Nb Δ Δ 〇 〇158 (Nil. 7Fe 0. 2Co) -2Nb Δ Δ 〇〇i: 59 CNi 2Fe) -5. 1 Cr- 1 A 1 Δ Δ 〇〇 160 (Ni 2Fc) -5. 7Cr- 1 A 1 Δ Δ 〇〇161 (Ni 1 OCo) -5W-lNb Δ 〇〇〇162 (Ni 2 OCo) - 5W- 1 T i - 1 Cu Δ 〇〇〇 153 (Ni30Co) - 5W-lV-lUe-lSn Δ 〇〇 〇本1<34 (Ni 4 OFe 4 OCo) -2 OTa 〇〇〇Δ 1(δ (Ni 20Fe 4 OCo) -20Cr 〇〇〇Δ 1(;6 (Ni30Fc30Co)-20V 〇〇〇Δ H;7 (N i 4 OFe 4 OCo) -2 ONb 〇〇〇Δ 1£8 (Ni20Fe20Co)-5Mo-lOCa 〇〇〇〇169 (Ni 20Fe30Co) -5V- 1 0 I n Δ 〇〇〇17) (Ni 3 OFe 4 OCo) -5Nb- 1 0 S i Δ 〇〇〇 171 171 (Ni20Fe40Co) - 5Cr-l〇Ge Δ 〇〇ο 17;> (Ni 4 OFe 20C〇) -5Ta J OTi Δ 〇〇〇 m (Ni 3 OFe 3 OCo) -5V-1 OHf Δ Example m (Ni20Fe20Co) - 5Nb-l OCu Δ 〇〇〇175 (Ni20Fe40Co) - 7 MO-10P Δ 〇ο 〇176 (Ni40Fc20Co) - 8M0-IOC Δ 〇〇〇 177 (Ni20Fe30Co) - 9Ta-10Ra 〇〇〇〇178 (Ni 2Fe 2Co) -4. 9Cr - 1 Λ 1 Δ Δ 〇Δ 179 (Ni 2Fe 2Co) -4. 5Cr - 1 A 1 Δ Δ 〇 Δ 180 (Ni 2 OFe 2 OCo) -5. lCr-lAl 〇〇〇〇

-19- t ;f:a* 201233814 [Table 8] Table 8

No composition (at?0) Coercive force saturation magnetic flux density Directional crystal grain size Remarks 181 (Ni 30Fe 30C〇) -5. 1 C r - 1 Λ 1 〇〇〇〇182 (Ni 30Fe30Co) -5. 5Cr-!Al Ο 183 183 (Ni 2 OFe 3 OCo) -5. 5 Cr- 1 Λ 1 〇〇〇〇 184 (Ni 2Fe2Co) -5. 5Cr-lAl Δ Δ 〇 Δ 185 (Ni20Fe20Co) -5. 5Cr- 1ΛΙ 〇〇〇〇明186 (Ni 2Fe 2Co) -5. 1 Cr 〇 △ 〇 Δ 187 (Ni 2Fe 2Co) -5. 5Cr 〇Δ 〇 Δ Example 188 (Ni50Co) - 5Ta-lNb -l In- lSn-IZr-lTi-lB Δ 〇〇〇189 (Ni 1 Co) -2W- 1 A1 X 〇〇〇190 (Ni 1 Fe) -2W-1A1 X 〇〇〇 191 (Ni 1 CoO A Fe) - 2Cr_l Al X 〇〇〇m 192 (Ni 0- 8Fe) -2Cr-lAl X 〇〇〇193 (Ni 〇 - 5C〇0 RFe) -2Nb-1 A 1 X Example 194 ( Ni 2Fe 2Co) - A. 9Cr Δ Δ Δ Δ Note) The bottom line is shown in Tables 1 to 8 except for the conditions of the present invention, and No. 1 to 95 and 125 to 188 are examples of the invention, No. 96 to 124 and 189 to 193 are comparative examples, and No. l94 is a reference example. Further, as described in the composition of Tables 1 to 8, for example, since No. 1 is W at 2 at%, (Ni2Fe) is from 100% to 2% and is 98 at%, and when 98% is set to 1, Ni is (100-2) and Fe is a ratio of 2. And since it does not contain Co', its ratio is equivalent to zero. Similarly, in the case of No. 50, since W and In are 7 at %, (N i 5 0 F e ) is 1 0 0 % - 7 % and is 9 3 at %, and the 9 3 at % is set to l, Ni is 100-50, and Fe is 50 ratio, that is, Ni and Fe are in the same ratio in terms of in ratio, and therefore, mean 46% of each of the average of 93% of each. In Comparative Example No. 96, since it was only Ni, the coercive force was high, and the orientation and crystal grain size were inferior. Comparative Example N 〇 . 9 7 Since the bismuth element is not contained, the orientation and the 201233814 crystal grain size are both poor. In the comparative example Νο·98, since the Fe content is high, the coercive force is high. In Comparative Example No. 99, since the W content was low and the A1 content was high, the coercive force was slightly high and the orientation was poor. In Comparative Example No. 100, since the W content was high, the coercive force was difficult to measure, and the saturation magnetic flux density and orientation were inferior. In Comparative Examples Nos. 101 and 102, since the W content was low and the contents of Zr and B were high, the orientation was poor. In Comparative Example No. 103, since the Ni content was low and the Fe content was high, the bridge coercive force became high. In Comparative Example No. 104, since the Ni content was low and the Fe content was high, the coercive force was high. In Comparative Example No. 105, since the Cr content was low, the coercive force was high, and the orientation and crystal grain size were inferior. In Comparative Example No. 106, since the Cr content was high, all the characteristics were inferior. In Comparative Example No. 107, since the Mo content was low, the coercive force was high, and the orientation and crystal grain size were inferior. In Comparative Example No. 108, since the Mo content was high, all the characteristics were inferior. Comparative Example N 〇 . 1 9 Because the content of T a is low, the coercive force is high, and the orientation and the crystal grain diameter are both poor. Comparative Example N 〇 .1 1 0 is inferior in all characteristics due to high T a content. Comparative Example N 〇 . 1 Μ Since the V content is low, the coercive force is high, and the orientation and the crystal grain size are both poor. In Comparative Example No. 1 1 2, since the V content was high, all the characteristics were inferior. In Comparative Example No. 113, since the Nb content was low, the coercive force was high, and both the orientation and the crystal grain size were inferior. In Comparative Example No. 114, since the Nb content was high, all the characteristics were inferior. Comparative Example N 〇 . 1 1 5 Since the content of C a is high, the orientation and crystal grain size are poor. Comparative Example No. :l 1 6 Since the In content is high, the orientation and the crystal grain size are inferior. Comparative Example No. 1 7 has a high Si content, so the orientation and crystal grain size are inferior. Comparative Example No. 18 has a poor Ge content, and thus has poor orientation and crystal grain size. Comparative Example No. 1 1 9 Since the Ti content is high, the orientation and crystal grain size are inferior. -21 - 201233814 Comparative Example ο · 1 2 0 The orientation and crystal grain size are poor due to the H f content. In Comparative Example No. 1 2 1, since the Cu content was high, the orientation and crystal grain size were inferior. Comparative Example N 〇 . 1 2 2 Due to the high P content, the orientation and crystal grain size were poor. In Comparative Example No. 123, since the C content was high, the orientation and crystal grain size were inferior. In Comparative Example No. 124, since the Ru content was high, the orientation and crystal grain size were inferior. In Comparative Example No. 189 of Table 8, since the content of Fe + Co was low, the bridge coercive force was poor. In Comparative Example No. 190, since the content of Fe + Co was low, the bridge coercive force difference was lower than that of No. 191 because the content of Fe + Co was low, so that the bridge coercive force was poor. Since No. 192 has a low content of Fe + Co, the coercive force is poor. Since No. 193 has a low content of Fe + c〇, the coercive force is poor. No. 194 was within the conditions of the present invention, but since the amount of C r added was 4.9 and did not exceed 5 Å, the characteristics were slightly inferior. Therefore, as a reference example, as described above, in the Ni-Fe-Co-M alloy, 'by being restricted to a certain content, magnetic properties are found by being restricted in the region, and the magnetic permeability in the (111) direction becomes high. By imparting magnetism to the Ni-based seed layer, the excellent effect of shortening the distance between the magnetic head and the soft magnetic underlayer film can be exhibited. [Manufacture and Evaluation of Sputtering Target] Next, an example of a method of producing a sputtering target will be described. Inventive Example No. 2, No. 10, No. 14, No. 18, No. 25, and Table 2 of the weighing scale 1 are Νο·35, No. 38, Νο·43, and No. 51 of Table 3. Νο·70, Table 4 Νο·79, Νο·85, No.89, No.95' No.102, No.117, No.118, 1^〇.122, Table 6 of Table 5> ^〇.128, >1〇.135, 1^〇.144, Table 1 1^〇.159, N ο . 1 7 0, N ο · 1 7 6, Table 8 N ο · 1 8 8 Comparative Example N ο. 1 9 0, Comparative -22- 201233814 The dissolved raw material of the component shown in Example No. 193 is melted by induction heating in a refractory material of a reduced pressure gas atmosphere, and is then heated from the lower part of the pot. The nozzle of 8 mm in diameter was discharged and atomized by Ar gas. The gas atomized powder was used as a raw material powder to be filled in a capsule made of carbon steel having a diameter of 250 mm and a length of 100 mm, and subjected to vacuum degassing sealing. The above-mentioned powder 塡 弹 ,, in No. 2, No. 10, No. 14, Table · 18, No. 25 of Table 1, No. 51 of Table 3, Ν ο 70 HIP molding was carried out under the conditions of a molding pressure of 1 47 MPa and a molding time of 1 hour, and No. 35, No. 38, No. 43, Table 4, No. 79, No. 85, > [〇.89, 1^〇.95 HIP molding was carried out under the conditions of a molding temperature of 1100° (:, forming pressure 147], and a molding time of 3 hours, and No. 102, No. 117, No. 118, No. .122, Table No. 128, No. 135, 1^〇.144, Table 7]^〇.159, 1^〇.170, >1〇.176, Table 8>1〇. 188, Comparative Example No. 190, Comparative Example No. 193 HIP molding was carried out under the conditions of a molding temperature of 950 ° C, a molding pressure of 147 MPa, and a molding time of 5 hours. The HIP body was cut by a wire, a rotary disk, and a flat honing. It is processed into a disc shape having a diameter of 180 mm and a thickness of 7 mm as a sputtering target. The sputtering target is formed on the glass substrate by using a sputtering target of these 27 types of components. X-rays are formed. The diffraction peak is in the present invention No. 2, Νο. 10, Νο·14, Νο·18, Ν ··25, Νο.35, Νο·38, No.43, No.51 'No.70 > No.79 ' No.85 ' No.89 ' No.95 > No.128 ' Νο·135, No. 144, No. 159' No. 170, No. 176, and Ν ο 186 all saw good orientation, while Comparative Examples No. 102, No. 117, No. 118, No. -23-201233814 Further, after measuring the magnetic properties in the same manner as the quenched ribbon, the present invention examples No. 2, No. 10, No. 14, No. 18, No. 25, No. 35, No. 38, No.43 ' No.51 ' No.70 > No.79 ' No.85 ' No.89 ' No.95 ' No.128 ' No.135 ' No.144 ' No.159 ' No.170 Good magnetic characteristics were observed in 'No. 176 ' No. 96, and good magnetic characteristics were not observed in Comparative Example No. 189, Comparative Example No. 190, and Comparative Example No. 193. About X-ray diffraction pattern The type was also measured in the same manner as in the quenched ribbon, and evaluated as 〇, Δ, and X in the same manner as the evaluation results of the quenched ribbon. Summarizing the above, it was confirmed that the evaluation result of the quenched ribbon was the same as that of the sputtered film formed by using the sputtering target. -twenty four-

Claims (1)

201233814 VII. Patent application scope: 1. An alloy which is an alloy for a seed layer of a magnetic recording medium, which comprises: one or more selected from the group consisting of W, Mo, Ta, Cr, V and Nb The M1 element accounts for 2 to 20 at% of the foregoing alloy, and is selected from the group consisting of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, (: and Ru). One or two or more kinds of M2 elements account for 1010 at% of the foregoing alloy, and the balances are Ni, Fe and Co, and are Ni: Fe: Co = 98 with respect to at% of the total amount of Ni + Fe + Co ～20: 0~50: 0 ～60 and the ratio of Fe + Co21.5. 2. The alloy of claim 1 is only 2 to 20 at% of the above alloy, and the above alloy 〇~ I〇at% of the M2 element, the remaining part of Ni, Fe and Co and the unavoidable impurities. 3. An alloy, which is a seed layer alloy for a magnetic recording medium, which contains: from W, Mo, Ta One or more elements selected from the group consisting of Cr, V and Nb 1 element accounts for 2 to 20 at% of the above alloy, from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf , B One or two or more kinds of M2 elements selected from the group consisting of Cu, P, (and Ru) account for 1010 at% of the above alloy, and the rest are Ni, Fe and Co relative to Ni + Fe + Co The percentage of the total amount is Ni:Fe : Co=98~20 : 2 to 50 : 0 to 60. 4 · The alloy of the third item of the patent application, which is only -25- 201233814 2~20at% of Ml element, 0~10at% of M2 element of the above alloy, the remaining part of Ni, Fe and Co and unavoidable impurities. 5. If the alloy of claim 1 or 2, It contains one or both of W and Mo. 6. The alloy of claim 3 or 4, which contains one or both of W and Mo. 7. The alloy of claim 1 or 2, It contains more than 5% Cr. 8. The alloy of claim 3 or 4 contains more than 5% Cr. 9. The alloy of claim 1 or 2 contains more than 0% and One or more selected from the group consisting of free Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Ru below 10 at%. An alloy of the third or fourth aspect of the patent, which contains more than 0% and less than 10 at% of free Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru. One or more selected ones of the groups. A sputtering target comprising the alloy of any one of claims 1 to 10 of the patent application. 12. A magnetic recording medium having a seed layer, which is composed of an alloy as claimed in any one of claims 1-6 to 1. -26- 201233814 Four designated representative circles: (1) The representative representative of the case is: No (2) The representative symbol of the representative figure is a simple description: No-3-201233814 If there is a chemical formula in the case, please reveal the best invention Chemical formula of the feature: none