201230124 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種真空規管。 【先前技術】 [0002]當代科技發展迅猛’在許多高新技術領域，需要極高的 真空環境，如：宇宙空間的模擬，超導技術，核聚變反 應，超低溫及巨型粒子加速器技術等。而在超高真空領 域’超高真空規管的研究係必不可少的重要環節。 [0003] [0004] 100100769 為提供體積小、功耗小及結構簡單的超高真空及極高真 空測量的真空規管’以適用於太空科技、超低溫及巨型 粒子加速器等領域，范守善等人於2〇Q4年7月3〇日申請， 於2010年08月〇1日公告號中華民國專利 中提供了一種真空規管，該真空規管包括：一冷陰極、 一陽極環、一收集極及一屏蔽極。該冷陰極包括一基底 %發射陣列及一栅極。所述場發射陣列形成於所述 基底的表面。所述柵極與所述場發射陣列相對設置。所 述屏蔽極—端與場發射陣列相對設置。所述屏蔽極另一 端與收集極相對設置。所述陽極環固定於屏蔽極内部。 上述真空規管工作時：首先係冷陰極發射電子，發射的 電子進入屏蔽極。在陽極環接高壓後，在屏蔽極内部形 成對稱的鞍形電場。電子在鞍形電場中發生多次振盪， 撞擊屏蔽極内的氣體分子並使其電離，形成離子流。離 子"IL被收集極所收集，轉化為收集極的電流訊號，此電 流大小與真空度成正比，從而可指示真空度。 所述真空規管中的場發射陣列的材料可選用各種金屬尖 表單編號A0101 1002001381- 第4頁/共30頁 201230124201230124 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a vacuum gauge. [Prior Art] [0002] Contemporary technology is developing rapidly. In many high-tech fields, extremely high vacuum environments are required, such as simulation of space space, superconducting technology, nuclear fusion reaction, ultra-low temperature and giant particle accelerator technology. In the field of ultra-high vacuum, the research department of ultra-high vacuum regulation is an indispensable part. [0003] [0004] 100100769 to provide a small size, low power consumption and simple structure of ultra-high vacuum and ultra-high vacuum measurement of the vacuum gauge 'for space technology, ultra-low temperature and giant particle accelerators, etc., Fan Shoushan and others 2) Applying on July 3, Q4, the vacuum regulation is provided in the Republic of China patent of August 1, 2010, which includes: a cold cathode, an anode ring, a collector and A shield pole. The cold cathode includes a substrate % emission array and a gate. The field emission array is formed on a surface of the substrate. The gate is disposed opposite the field emission array. The shield pole-end is disposed opposite the field emission array. The other end of the shield is disposed opposite the collector. The anode ring is fixed inside the shield pole. When the above vacuum gauge works: first, the cold cathode emits electrons, and the emitted electrons enter the shield pole. After the anode is connected to the high voltage, a symmetrical saddle electric field is formed inside the shield. The electrons oscillate multiple times in the saddle electric field, striking and ionizing the gas molecules in the shield to form an ion current. The ion "IL is collected by the collector and converted into a current signal of the collector, which is proportional to the degree of vacuum to indicate the degree of vacuum. The material of the field emission array in the vacuum gauge can be selected from various metal tips. Form No. A0101 1002001381 - Page 4 of 30 201230124
[0005] 、非金屬尖、化合物尖'各種適宜於場發射的奈米材料 等。該種真空規管在應用過程中，由於場發射陣列所採 用的材料的場發射性能較差，因此冷陰極中的柵極須施 加一較高的正電位，以從場發射陣列中拔出電子。然而 柵極的正電位較高時，柵極會吸引屏蔽極中的電子，使 屏蔽極中的電子打到栅極上，從而導致電子在屏蔽極中 的運動軌跡變短，從而不能與屏蔽極中的氣體分子碰揸 使氣體電離，導致真空規管靈敏度降低。 【發明内容】 有馨於此’提供-種具有聽敏度的真空規管實為必要 [0006] 一種真空規管，其包括：-冷陰桎，其包括—陰極發射 早几及與所述陰極發射單_對設置的―柵極；—屏蔽 極’其包括-收容空間及二端部，該屏蔽極的一端與所 述冷陰極相對設置；—陽極環，該陽極環設置於所述屏 才的收―工間内’ -收集極’其與所述屏蔽極的另—[0005] Non-metal tip, compound tip 'a variety of nanomaterials suitable for field emission, and the like. In the application of this vacuum gauge, since the field emission properties of the materials used in the field emission array are poor, the gate of the cold cathode must apply a higher positive potential to extract electrons from the field emission array. However, when the positive potential of the gate is high, the gate attracts electrons in the shield, causing electrons in the shield to strike the gate, resulting in a shorter trajectory of electrons in the shield, and thus cannot be in the shield. The gas molecules touch the gas to ionize the gas, resulting in a decrease in the sensitivity of the vacuum gauge. SUMMARY OF THE INVENTION It is necessary to provide a vacuum gauge having a hearing sensitivity. [0006] A vacuum gauge comprising: - a cold cathode, comprising - a cathode emission and a Cathode emission single-pair "gate"; - shield pole - comprising - receiving space and two ends, one end of the shield is opposite to the cold cathode; - an anode ring, the anode ring is disposed on the screen Only the collection - the collection of the 'collection' with the shield pole of the other -
端^對設置；所述__單元包括至少—電子發射體 ^所述電子魏體輕錄 未碳管管狀結構具有一中*沾& 又录 管肤社二的線狀軸心，所述奈米碳管 心的一端延伸出複 所為複數奈米碳管圍繞該中空的線狀轴心組成， Γ奈米碳管管狀結構沿所述線狀轴,< 數電子發射尖端。 [0007] 100100769 與先前技術相比較，所述真空規管 射體為-奈米碳管營狀結構二 碳管管狀結構的-端延伸出，因此 表單編號A0101 的冷陰極中的電子發 電子發射尖端從奈米 ，該電子發射體具有 第5頁/共30冥 1002001381-0 201230124 較好的場發射性能。故，只需給柵極施加較小的電壓就 可使電子發射體發射出電子。由於栅極上施加的電壓降 低’故屏蔽極中的電子不易被柵極吸引，電子在屏蔽極 中具有較長的路徑，從而可與屏蔽極中的氣體碰撞，使 氣體電離，被收集極收集’使真空規管靈敏度提高。 【實施方式】 [0008] [0009] [0010] 下面將結合附圖及具體實施例對本發明進行詳細說明。 凊參閱圖1 ’本發明實施例提供一種真空規管30，其包括 一外殼38及設置於該外殼38内部的冷陰極31、一屏蔽極 32、一陽極環33、一電子引入極37、一離子引出極34、 一反射極35、一收集極36及一芯柱39。所述屏蔽極32包 括一收容空間及二端部，該屏蔽極32的一端與該冷陰極 31相對設置，另一端與該離子引出極34相對設置。所述 冷陰極31通過該芯柱39固定於所述外殼38的一端。所述 電子引入極37設置於屏蔽極32與冷陰極31之間。所述電 。所述離子引出極 34設置於屏蔽極32與收集極36之開，所述離子引出極34 中心開設一離子引出孔341。該收集極36指向離子引出孔 341。該反射極35設置於離子引出極34的_侧。該陽極環 33固定於屏蔽極32收容空間内部。 該冷陰極包括-基底312、—陰極發射單元314及一概 極316，所述陰極發射單元314形成於所述基底312的表 面，所述栅極316與陰極發射單元314相對設置。所述拇 極316可採用各種孔狀結構，如金屬環，金屬孔或金屬網 。所述陰極發射單元314對準電子引入口 371。所述陰極 100100769 表單煸號A0101 第6頁/共30頁 1002001381-0 201230124 發射單元314包括複數電子發射體3Π。所述陰極發射單 元314中的複數電子發射體311的具體設置方式不限，如 相互平行且間隔設置、並排設置或交又設置等。所述複 數電子發射體311—端可通過一導電膠與所述基底312電 連接。該電連接的方式也可通過分子間力或者其他方式 實現。所述複數電子發射體311與基底312之間的位置關 係不限，只需確保該電子發射體311的一端與基底312電 連接即可。 [0011] 該陰極發射單元314可包括複數電子發射艘311。請參閲 〇 圖2、圖3、圖4及圖5，所述電子發射體各11包括一奈米竣 管管狀結構，所述奈米碳管管狀結構具有一中空的線狀 轴心，所述奈米碳管管狀結構為.複數奈米.碳..官圍繞該中 空的線狀轴心組成，所述奈米碳管管狀結構沿線狀轴心 的一端延伸出複數電子發射尖端306 ° β述奈米碳管管狀 結構中複數奈米破管通過凡得瓦力相互連接成一體結構 。所述奈米碳管管狀結構中大多數奈米碳管通過凡得瓦 力首尾相連並園繞中空的線狀軸心螺旋延伸。可以理解 ^ ，該奈米碳管管狀結構中也存在少數隨機排列的奈米碳 管。該少數隨機排列的奈米碳管的延伸方向沒有規則° 然，所述少數隨機排列的奈米碳管不影響所述奈米碳管 管狀結構中大多數奈米碳管的排列方式與延伸方命°在 此，將線狀轴心的長度方向定義為複數奈米碳管的延伸 方向，將複數条米碳管圍繞所述線狀轴心螺旋形成的方 向定義為螺旋方向。在媒旋方向上相鄰的奈米碳管通過 凡得瓦力首尾相連’在延伸方向上相鄰的奈米碳管通過 100100769 表單編號Α0101 1002001381-0 201230124 凡得瓦力緊密結合。該奈米碳管管狀結構中的大多數奈 米碳管的螺旋方向與所述線狀軸心的長度方向形成一定 的交叉角α，且α大於〇°且小於等於90。。 [0012] 所述線狀軸心係空的，係虛擬的，係該奈米碳管管狀結 構的軸心。該線狀軸心的截面形狀可為方形、梯形、圓 形或橢圓形等形狀，該線狀軸心的截面大小，可根據實 際要求而定。 [0013] 所述奈米碳管管狀結構的一端具有複數電子發射尖端306 ’所述複數電子發射尖端圍繞所述線狀軸心呈環形排 列。具體地，所述奈米碳管管狀結構在沿線狀軸心長度 的方向具有一第一端302及與該第一端30 2相對的一第二 端304。所述奈米碳管管狀結構的第一端302與基底312 電連接。所述奈米碳管管狀結構的第二端304指向電子引 入口 371。在第二端304，所述奈米碳管管狀結構的整體 直徑沿遠離第一端102的方向逐漸減Φ，; 4收縮形成一類 圓錐形的縮口，作為所述聲子發射體311的電子發射部 308。所述電子發射體311在Jl用〔時，於電場作用下從電 子發射部308發射出電子，由於電子發射體311的電子發 射部308為類圓錐形，可使電子發射部1〇8的局部電場集 中，因此可增強電子發射部308的場增強因數，使電子發 射體311易於發射出電子。 [0014] 請一併參閱圖6，所述類圓錐形的電子發射部3〇8的末知 具有一開口 310，及複數突出的奈米碳管束。即’所述奈 米碳管管狀結構具有複數電子發射尖端的一端具有一開 口 310，所述奈米碳管管狀結構從開口 310處延伸出複數 100100769 表單編號A0101 第8頁/共30頁 1002001381-0 201230124 奈米碳管束作為複數電子發射尖端306。該複數奈米碳管 束為所述奈米碳管管狀結構從第二端304延伸出來的複數 由奈米破管組成的束狀結構。該複數奈米碳管束圍繞所 述線狀軸心呈環狀排列，作為複數電子發射尖端306。由 於該複數電子發射尖端306呈環形排列，因此，該複數電 子發射尖端306之間的間距較大，降低了該複數電子發射 尖端306之間的電場屏蔽效應。該複數奈米碳管束的延伸 方向基本一致，即該複數電子發射尖端306基本沿所述線 狀轴心的長度方向向遠離奈米碳管管狀結構的方向延伸 0 ，所述遠離奈米碳管管狀結構的方向係指遠離奈米碳管 . .. ...-.... ...... .. ... 管狀結構的第一端302的方.向:.延伸' 優選地所述複數電 子發射尖端306指向電子引入口 371 β進一步地，該複數 奈米碳管束圍繞所述線狀軸心呈發散狀排列，即該複數 電子發射尖端306的延伸方向逐漸遠離所述線狀軸心。當 該複數奈米碳管束呈發散狀排列時，所述電子發射部308 的雖然徑向尺寸為沿遠離奈米碳管管狀結構的第一端3〇2 方向逐漸減小，但複數電子發射尖端306呈發散性的排列 〇 ’進而電子發射部308的末端向外略微擴張，從而複數電 子發射尖端306之間的距離沿延伸方向逐漸變大，使開口 310處的複數電子發射尖端306相互間的間距更加擴大， 降低了電子發射尖端306之間的電場屏蔽效應。所述開口 310的徑向尺寸範圍為4微米4微米，本實施例中，所述 開口 310為圓形，所述開口 310的徑向尺寸為5微米，因此 位於開口 310的相對兩端的電子發射尖端3〇6的間距大於 等於5微米。 100100769 表單編號Α0101 第9頁/共30頁 1002001381-0 201230124 [0015] 請參閱圖7，每一電子發射尖端306包括複數基本平行排 列的奈米碳管，並且每一電子發射尖端3 0 6的頂端突出有 一奈米碳管，即所述複數平行排列的奈米碳管的中心位 置突出一奈米碳管。該突出的奈米碳管的底端（即突出 的奈米碳管的非自由端）周圍還圍繞有複數奈米碳管， 該複數圍繞的奈米碳管起到固定該突出的奈米碳管的作 用。該突出奈米碳管的直徑小於5奈米。本實施例中突出 的奈米碳管的直徑為4奈米。由於該突出的奈米碳管的直 徑極小，因此，該突出的奈米碳管具有十分大的長徑比 ，進而增加了該突出的奈米碳管的場增強因數，使該突 出的奈米碳管的場發射性能優異。所述複數電子發射尖 端306中相鄰的電子發射尖端306中的突出的奈米碳管之 間的距離為0. 1微米至2微米。相鄰的兩電子發射尖端306 中的突出的奈米碳管之間的距離與突出的奈米碳管直徑 的比例的範圍為20:1至500:1。可以理解，相鄰的電子 發射尖端306的突出的奈米複管之間的間距遠大於突出的 奈米碳管的直徑，可有效降低相鄰的突出奈米碳管之間 的電場屏蔽效應。 [0016] 具體的，所述奈米碳管管狀結構係由至少一奈米碳管膜 或至少一奈米碳管線沿該線狀軸心的軸向緊密環繞而形 成。可以理解，該奈米碳管管狀結構的管壁具有一定的 厚度，所述厚度可通過控制所環繞奈米碳管膜或奈米碳 管線的層數確定。該奈米碳管管狀結構内徑及外徑的大 小可根據實際需求製備。優選地，該奈米碳管管狀結構 的内徑範圍為2微米至100微米，外徑為10微米至120微 100100769 表單編號A0101 第10頁/共30頁 1002001381-0 201230124 米。優選地’該奈米碳管管狀結構的内徑範聞為10微米 至40微米’外徑為2〇微米至5〇微米。本實施例中，s亥奈 米碳管管狀結構的内徑約為18微米，外徑約為30微米。 [0017] Ο [0018] 所述電子發射體311的製備方法，包括以T夕驟’（S10 )提供-線狀支紐；（S2G)提供至少，条米碳管膜或 至少一奈米碳管線，將所述至少一奈米碳管膜或至少一 奈米碳管線纏繞在所述線狀支撐體表面形成/奈米破官 層；（S3G)移除所述線狀支#體，得到，由奈米碳管層 圍成的管狀奈米碳管預製體；及（S40)將该管狀奈米碳 管預製體熔斷，形成所述電子發射體311。 所述外殼38的作用為收容所述冷陰極31、/屏蔽極32、 一陽極環33、一電子引入極37、一離子引出極34、—反 射極35、一收集極36及芯柱39。該外殼3名異有一開口 40 。該開口4〇與待測器件（圖未示）相連y所述外殼38為 '可選擇結構* [0019] Ο 所述屏蔽極32為一管狀結構，具有相對的二端部’每一 端部具有一開口’位於相鄰的二端部之間為收容空間。 管狀結構的截面形狀可為圓形、橢圓形、方形等。所述 屏蔽極32為導電材料製成，用於提供一空間，使電子在 其中振蕩。本實施例中，所述屏蔽極32為一形成於外殼 38内表面部份區域的金膜，所述金膜形成一圓筒形。該 屏蔽極32圓同直徑18毫米’長18毫米。然而，本發明的 屏蔽極32的形狀也不限於圓筒形，可採用其他對稱的中 空立體形狀’只要能使電子在其中產生振蕩即可《所述 外殼38對應於屏蔽極32的部份可依據屏蔽極32所需的形 100100769 表單編號Α0101 第11頁/共30頁 1〇〇2〇〇1381-〇 201230124 狀而定。 [0020] [0021] [0022] [0023] 所述電子引入極37能更好的使電子進入屏蔽極32。該電 子引入極37為與屏蔽極32相配套的圓盤形結構，且電子 引入極37與屏蔽極32保持電絕緣。所述電子引入極37的 圓盤形結構的邊緣可固定於外殼38的内表面。電子引入 極37為一可選擇結構。 該陽極環33通過支撐杆（圖未示）固定於該屏蔽極犯的收 容空間内部，並通過引線外接電壓。為了形成對稱的鞍 形電場’該陽極環33設置於屏蔽極32正中間。優選地， 所述％極環33與屏蔽極32同輪設置。該陽極環33與屏蔽 極32保持電絕緣。該陽極環33的直徑9毫米，係用比較細 的金屬絲彎成，本實施例選用直徑為200微米的細金屬絲 製成陽極環33。 離子引出極34為與屏蔽極32相配套的圓盤形結構，並與 屏蔽極32保持電絕緣。所述離子_出極34的圓盤形結構 的邊緣可固定於所述外殼38的内部。該離子引出極34中 心開設的離子引出孔341及電子引入孔371的直徑相同。 所述離子引出極34為一可選擇結構。 所述反射極35為曲面結構，該曲面結構圍住屏蔽極32靠 近離子引出極34的一側。所述反射極35可為形成於所述 外殼38内部的一金屬層。所述外殼40對應反射極35的部 份可形成所需的曲面結構。本實施例中，該反射極35為 形成於該反射極35為半球面結構，其直徑與屏蔽極32直 徑相同’為18毫米。該半球面結構以離子引出孔341為球 100100769 表單編號A0101 第12頁/共30頁 1002001381-0 201230124 [0024] ❹ [0025] Ο [0026] 100100769 心，使反射極35的半球面圍住靠近離子引出極34的屏蔽 椏32的一側，而且反射極35與離子引出極34之間保持電 絕緣。所述反射極35為一可選擇結構。 所述收集極36設置於該反射極35曲面結構底部，並指向 離子引出孔341。該反射極35半球面底部開設一小開口（ 未標示），用於設置該收集極36。該收集極36為一根細金 屬絲，本實例選取該金屬絲直徑為200微米。該收集極36 Λ部份進入反射極35所囡空間，其尖端對準離子引出孔 341。反射極35與收集極36之間保持電絕緣。所述反射極 35為一可選擇結構，#濂有所述反射極35時，收集極36 直接與屏蔽極32相對。上述揚極環33、離子引出極34及 反射極35都以屏蔽極32轴身線中心對稃。 真空規管30的電位設置：屏蔽極32接成Vi ;陽極環33電 ........::. 位Va設在1 000V左右；收集極36電位Vc為零；反射極35 設置一正電位Vr，以利收集^極奸收;集離子丨；冷陰極31中 的柵極316也須置於一正電位元，避免電子打在收集極36 上；電子引入極37及_子引出極34的電位根據實際情況 設置，以獲得最大靈敏度。可以理解的係，其他電位也 需要根據真空規管30實際工作情況調整，以獲得規管最 佳工作狀態。 本發明的真空規管30工作時.首先係陰極發射單元314中 的電子發射體311在柵極316的作用下發射電子，電子通 過所述電子引入極37的電子引入孔371進入屏蔽極32。在 該陽極環33接高壓後’在屏蔽極32内部形成對稱的鞍形 電場。電子在鞍形電場中發生多次振蕩，撞擊氣體分子 第13頁/共30頁 表單編號A0101 1002001381-0 201230124 並使其電離，形成離子流。根據類比計算的結果，電子 在圓筒結構的屏蔽極32内更容易振蕩，從而獲得較高的 靈敏度。當離子流從靠近收集極36的離子引出孔341出來 ，在反射極35電位協同作用下，離子被收集極36所收集 ，轉化為收集極36的電流訊號，此電流大小與真空度成 正比，從而可指示真空度。 [0027] [0028] [0029] 上述實施例的真空規管30各元件尺寸只為優選的典型尺 寸；本發明的真空規管30尺寸並不唯一確定，視各種具 體情況可作適當改動，以獲得規管最佳工作狀態。電子 引入孔3 71及離子引出孔3 41的直徑需根據實際情況設計 ，特別係離子引出孔341，需要考慮既不影響鞍場中電子 的振蕩，同時保證足夠多的錶子到達收集極36，作合理 設計。 本發明第一實施例中的真空規管30具有以下有益效果： 冷陰極31中的電子發射體311包括一奈米碳管管狀結構， 複數電子發射尖端306從奈米碳管管狀結構的一端延伸出 ，因此，該電子發射艘31 l·具有較好的場發射性能。故， 只需給柵極316施加較小的電壓就可使電子發射體311發 射出電子。由於柵極316上施加的電壓降低，故屏蔽極32 中的電子不易被栅極316吸引’電子在屏蔽極μ中具有較 長的路徑’從而可與屏蔽極32中的氣體碰撞，使氣體電 離，使真空規管30靈敏度提高。 本發明第二實施例提供一種真空規管，其包括一冷陰極 、一屏蔽極、一陽極環、一電子引入極、—離子引出極 、一反射極及一收集極。第二實施例中的真空規管的衾士 100100769 表單編號A0101 第14頁/共30頁 1002001381-0 201230124 Ο [0030]The __ unit includes at least an electron emitter, the electronic WEI body, the lightly recorded carbon tube, and the tubular structure having a linear axis of the middle and the second One end of the carbon nanotube is extended to form a plurality of carbon nanotubes surrounding the hollow linear axis, and the tubular carbon nanotube tubular structure is along the linear axis, <number electron emission tip. [0007] 100100769 Compared to the prior art, the vacuum gauge emitter extends from the end of the tubular structure of the carbon nanotube-shaped tubular structure, so the electron emission in the cold cathode of Form No. A0101 The tip is from nanometer, and the electron emitter has a better field emission performance on page 5/total 302001381-0 201230124. Therefore, it is only necessary to apply a small voltage to the gate to cause the electron emitter to emit electrons. Since the voltage applied to the gate is lowered, the electrons in the shield are not easily attracted by the gate, and the electron has a long path in the shield, so that it can collide with the gas in the shield to ionize the gas and be collected by the collector. Improve the sensitivity of the vacuum gauge. The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. Referring to FIG. 1 , an embodiment of the present invention provides a vacuum gauge tube 30 including a housing 38 and a cold cathode 31 disposed inside the housing 38 , a shield pole 32 , an anode ring 33 , an electron lead-in electrode 37 , and a The ion extracting pole 34, a reflecting pole 35, a collecting pole 36 and a stem 39 are provided. The shielding pole 32 includes a receiving space and two end portions. One end of the shielding pole 32 is opposite to the cold cathode 31, and the other end is opposite to the ion extracting pole 34. The cold cathode 31 is fixed to one end of the outer casing 38 by the stem 39. The electron introduction pole 37 is disposed between the shield electrode 32 and the cold cathode 31. The electricity. The ion extracting electrode 34 is disposed at the opening of the shield electrode 32 and the collector 36, and an ion extracting hole 341 is defined in the center of the ion extracting electrode 34. The collector 36 is directed to the ion extraction aperture 341. The reflecting electrode 35 is disposed on the _ side of the ion extracting electrode 34. The anode ring 33 is fixed to the inside of the housing space of the shield electrode 32. The cold cathode includes a substrate 312, a cathode emitting unit 314, and a cathode 316 formed on a surface of the substrate 312, the gate 316 being disposed opposite the cathode emitting unit 314. The thumb 316 can adopt various hole-like structures such as a metal ring, a metal hole or a metal mesh. The cathode emission unit 314 is aligned with the electron introduction port 371. The cathode 100100769 Form nickname A0101 Page 6 of 30 1002001381-0 201230124 The firing unit 314 includes a plurality of electron emitters 3Π. The specific arrangement of the plurality of electron emitters 311 in the cathode emission unit 314 is not limited, such as being parallel to each other and spaced apart, arranged side by side, or placed side by side. The end of the complex electron emitter 311 can be electrically connected to the substrate 312 through a conductive paste. The manner of electrical connection can also be achieved by intermolecular forces or other means. The positional relationship between the plurality of electron emitters 311 and the substrate 312 is not limited, and it is only necessary to ensure that one end of the electron emitter 311 is electrically connected to the substrate 312. [0011] The cathode emission unit 314 may include a plurality of electron emission vessels 311. Referring to FIG. 2, FIG. 3, FIG. 4 and FIG. 5, each of the electron emitters 11 includes a nanotube tubular structure, and the nanotube structure has a hollow linear axis. The tubular structure of the carbon nanotubes is composed of a plurality of nanometer carbons. The central carbon nanotubes are arranged around the hollow linear axis, and the tubular structure of the carbon nanotubes extends along a linear axis to extend a plurality of electron emission tips 306 ° β In the tubular structure of the carbon nanotube, the plurality of nano-tubes are connected to each other by van der Waals force. Most of the carbon nanotubes in the tubular structure of the carbon nanotubes are connected end to end by a van der Waals force and spirally extend around a hollow linear axis. It can be understood that there are also a small number of randomly arranged carbon nanotubes in the tubular structure of the carbon nanotube. The direction of extension of the minority of randomly arranged carbon nanotubes is not regular. The few randomly arranged carbon nanotubes do not affect the arrangement and extension of most of the carbon nanotubes in the tubular structure of the carbon nanotubes. Here, the longitudinal direction of the linear axis is defined as the extending direction of the plurality of carbon nanotubes, and the direction in which the plurality of carbon nanotubes are spirally formed around the linear axis is defined as the spiral direction. The adjacent carbon nanotubes in the direction of the media rotation are connected end to end by the van der Waals. The carbon nanotubes adjacent in the extending direction pass through the 100100769 form number Α0101 1002001381-0 201230124. The helical direction of most of the carbon nanotubes in the tubular structure of the carbon nanotube forms a certain crossing angle α with the longitudinal direction of the linear axis, and α is larger than 〇° and less than or equal to 90. . [0012] The linear axis is empty and is virtual, and is the axis of the tubular structure of the carbon nanotube. The cross-sectional shape of the linear axis may be a square, trapezoidal, circular or elliptical shape, and the cross-sectional size of the linear axis may be determined according to actual requirements. [0013] One end of the tubular structure of the carbon nanotube has a plurality of electron-emitting tips 306', and the plurality of electron-emitting tips are arranged in a ring shape around the linear axis. Specifically, the carbon nanotube tubular structure has a first end 302 and a second end 304 opposite the first end 30 2 in a direction along the length of the linear axis. The first end 302 of the carbon nanotube tubular structure is electrically connected to the substrate 312. The second end 304 of the carbon nanotube tubular structure is directed to the electron introduction port 371. At the second end 304, the overall diameter of the tubular structure of the carbon nanotubes is gradually reduced by Φ in a direction away from the first end 102; 4 is contracted to form a conical shaped constriction as an electron of the phonon emitter 311 The transmitting unit 308. The electron emitter 311 emits electrons from the electron emission portion 308 under the action of an electric field, and the electron emission portion 308 of the electron emitter 311 is conical-shaped, so that the electron emission portion 1 can be partially The electric field is concentrated, so that the field enhancement factor of the electron-emitting portion 308 can be enhanced, making it easy for the electron-emitting body 311 to emit electrons. [0014] Referring to FIG. 6 together, the conical electron-emitting portion 3〇8 has an opening 310 and a plurality of protruding carbon nanotube bundles. That is, the tubular carbon nanotube tubular structure has an opening 310 at one end of the complex electron emission tip, and the tubular structure of the carbon nanotube extends from the opening 310 to a plurality of 100100769. Form No. A0101 Page 8 / Total 30 Page 1002001381- 0 201230124 The carbon nanotube bundle acts as a complex electron emission tip 306. The plurality of carbon nanotube bundles are bundles of a plurality of nanotubes extending from the second end 304 of the tubular structure of the carbon nanotubes. The plurality of carbon nanotube bundles are arranged in a ring shape around the linear axis as a complex electron emission tip 306. Since the plurality of electron-emitting tips 306 are arranged in a ring shape, the spacing between the plurality of electron-emitting tips 306 is large, reducing the electric field shielding effect between the plurality of electron-emitting tips 306. The plurality of carbon nanotube bundles extend substantially in the same direction, that is, the plurality of electron-emitting tips 306 extend substantially along the length direction of the linear axis toward the tubular structure of the carbon nanotubes, and the nano-carbon nanotubes are away from the carbon nanotubes. The direction of the tubular structure means away from the carbon nanotubes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The plurality of electron emission tips 306 are directed to the electron introduction port 371 β. Further, the plurality of carbon nanotube bundles are arranged in a divergent manner around the linear axis, that is, the extension direction of the plurality of electron emission tips 306 is gradually away from the line shape. Axis. When the plurality of carbon nanotube bundles are arranged in a divergent manner, the radial size of the electron-emitting portion 308 gradually decreases in a direction away from the first end 3〇2 of the tubular structure of the carbon nanotube, but the complex electron emission tip 306 is in a divergent arrangement 进而' and the end of the electron-emitting portion 308 is slightly expanded outward, so that the distance between the plurality of electron-emitting tips 306 gradually increases in the extending direction, so that the plurality of electron-emitting tips 306 at the opening 310 are mutually The spacing is further enlarged, reducing the electric field shielding effect between the electron emitting tips 306. The radial dimension of the opening 310 ranges from 4 micrometers to 4 micrometers. In the embodiment, the opening 310 is circular, and the radial dimension of the opening 310 is 5 micrometers, so electron emission at opposite ends of the opening 310 is obtained. The pitch of the tip 3〇6 is greater than or equal to 5 μm. 100100769 Form No. 1010101 Page 9 of 30 1002001381-0 201230124 [0015] Referring to FIG. 7, each electron emission tip 306 includes a plurality of substantially parallel aligned carbon nanotubes, and each electron emission tip 3 0 6 A carbon nanotube is protruded from the top end, that is, a central position of the plurality of parallel arranged carbon nanotubes protrudes from a carbon nanotube. The bottom end of the protruding carbon nanotube (ie, the non-free end of the protruding carbon nanotube) is also surrounded by a plurality of carbon nanotubes, and the plurality of surrounding carbon nanotubes serve to fix the protruding nanocarbon The role of the tube. The protruding carbon nanotubes have a diameter of less than 5 nanometers. The carbon nanotube protruding in this embodiment has a diameter of 4 nm. Since the protruding carbon nanotube has a very small diameter, the protruding carbon nanotube has a very large aspect ratio, thereby increasing the field enhancement factor of the protruding carbon nanotube, making the protruding nanometer The carbon tube has excellent field emission properties. The distance between the protruding carbon nanotubes in the adjacent electron-emitting tips 306 of the plurality of electron-emitting tips 306 is from 0.1 μm to 2 μm. The ratio of the distance between the protruding carbon nanotubes in the adjacent two electron-emitting tips 306 to the diameter of the protruding carbon nanotubes ranges from 20:1 to 500:1. It will be appreciated that the spacing between the protruding nanotubes of adjacent electron-emitting tips 306 is much larger than the diameter of the protruding carbon nanotubes, effectively reducing the electric field shielding effect between adjacent protruding carbon nanotubes. [0016] Specifically, the tubular structure of the carbon nanotubes is formed by tightly surrounding at least one carbon nanotube film or at least one nano carbon line along an axial direction of the linear axis. It will be appreciated that the wall of the tubular structure of the carbon nanotubes has a thickness which can be determined by controlling the number of layers surrounding the carbon nanotube membrane or the carbon nanotube. The inner diameter and the outer diameter of the tubular structure of the carbon nanotube can be prepared according to actual needs. Preferably, the inner diameter of the tubular structure of the carbon nanotubes ranges from 2 micrometers to 100 micrometers, and the outer diameter ranges from 10 micrometers to 120 micrometers 100100769. Form No. A0101 Page 10 of 30 1002001381-0 201230124 meters. Preferably, the tubular structure of the carbon nanotubes has an inner diameter of from 10 micrometers to 40 micrometers and an outer diameter of from 2 micrometers to 5 micrometers. In this embodiment, the s-Hylon carbon tube tubular structure has an inner diameter of about 18 microns and an outer diameter of about 30 microns. [0017] The method for preparing the electron emitter 311 includes providing a linear branch in a T (S10); (S2G) providing at least a strip of carbon nanotube film or at least one nanocarbon a pipeline, the at least one carbon nanotube film or at least one nano carbon line is wound on the surface of the linear support to form a nano-destruction layer; (S3G) to remove the linear branch body, a tubular carbon nanotube preform surrounded by a carbon nanotube layer; and (S40) blowing the tubular carbon nanotube preform to form the electron emitter 311. The outer casing 38 functions to house the cold cathode 31, the shield electrode 32, an anode ring 33, an electron introducing electrode 37, an ion extracting electrode 34, a reflecting electrode 35, a collecting pole 36 and a stem 39. The outer casing 3 has an opening 40. The opening 4〇 is connected to a device to be tested (not shown) y. The outer casing 38 is an 'optional structure*. </ RTI> The shielding pole 32 is a tubular structure having opposite two ends 'each end having An opening 'between the adjacent two ends is a receiving space. The cross-sectional shape of the tubular structure may be circular, elliptical, square, or the like. The shield electrode 32 is made of a conductive material for providing a space in which electrons oscillate. In this embodiment, the shield electrode 32 is a gold film formed on a portion of the inner surface of the outer casing 38, and the gold film forms a cylindrical shape. The shield pole 32 has a diameter of 18 mm' and a length of 18 mm. However, the shape of the shield pole 32 of the present invention is not limited to a cylindrical shape, and other symmetrical hollow three-dimensional shapes may be employed as long as the electrons can oscillate therein. The portion of the outer casing 38 corresponding to the shield pole 32 may be According to the shape 100100769 required for the shield pole 32, the form number Α0101 page 11 / total 30 pages 1〇〇2〇〇1381-〇201230124 depends on the shape. [0023] [0023] The electron introduction pole 37 can better allow electrons to enter the shield pole 32. The electron introduction pole 37 is a disc-shaped structure associated with the shield pole 32, and the electron introduction pole 37 is electrically insulated from the shield pole 32. The edge of the disc-shaped structure of the electron introduction pole 37 may be fixed to the inner surface of the outer casing 38. The electron introduction pole 37 is an alternative structure. The anode ring 33 is fixed inside the receiving space of the shielding pole by a support rod (not shown) and is externally connected to the voltage. In order to form a symmetrical saddle electric field, the anode ring 33 is disposed in the middle of the shield pole 32. Preferably, the % pole ring 33 is disposed in the same wheel as the shield pole 32. The anode ring 33 is electrically insulated from the shield 32. The anode ring 33 has a diameter of 9 mm and is bent by a relatively thin metal wire. In this embodiment, a thin metal wire having a diameter of 200 μm is used to form the anode ring 33. The ion extractor 34 is a disc-shaped structure associated with the shield 32 and is electrically insulated from the shield 32. The edge of the disc-shaped structure of the ion-outlet 34 may be fixed to the inside of the outer casing 38. The ion extraction holes 341 and the electron introduction holes 371 which are opened in the center of the ion extracting electrode 34 have the same diameter. The ion extractor 34 is an optional structure. The reflective pole 35 is a curved structure that encloses the side of the shield pole 32 adjacent to the ion extracting pole 34. The reflective electrode 35 can be a metal layer formed inside the outer casing 38. The portion of the outer casing 40 corresponding to the reflector 35 can form a desired curved structure. In the present embodiment, the reflector 35 is formed on the reflector 35 in a hemispherical configuration having a diameter equal to the diameter of the shield 32 and is 18 mm. The hemispherical structure uses the ion extraction hole 341 as the ball 100100769. Form No. A0101 Page 12/Total 30 Page 1002001381-0 201230124 [0024] ❹ [0025] 0026 [0026] 100100769 The heart is surrounded by the hemispherical surface of the reflector 35 The ion extraction electrode 34 is on one side of the shield 32 and the reflector 35 is electrically insulated from the ion collector 34. The reflector 35 is an optional structure. The collector electrode 36 is disposed at the bottom of the curved structure of the reflector 35 and is directed to the ion extraction hole 341. A small opening (not shown) is formed in the bottom of the hemispherical surface of the reflector pole 35 for arranging the collector 36. The collector 36 is a fine metal wire which is selected to be 200 microns in diameter in this example. The collector portion 36 enters the space of the reflector 35, and its tip is aligned with the ion extraction hole 341. The reflector 35 is electrically insulated from the collector 36. The reflector 35 is an optional structure. When the reflector 35 is present, the collector 36 is directly opposite the shield 32. The anode ring 33, the ion extracting electrode 34, and the reflecting electrode 35 are both aligned at the center of the shaft of the shield electrode 32. The potential setting of the vacuum gauge 30 is: the shield pole 32 is connected to Vi; the anode ring 33 is electrically .....::. The position Va is set at about 1 000V; the collector 36 potential Vc is zero; the reflector 35 is set. A positive potential Vr, in order to collect the collection; the collector 316; the gate 316 in the cold cathode 31 must also be placed on a positive potential element to prevent electrons from hitting the collector 36; the electron introduction pole 37 and the _ sub The potential of the extraction pole 34 is set according to the actual situation to obtain the maximum sensitivity. It can be understood that other potentials need to be adjusted according to the actual working conditions of the vacuum gauge 30 to obtain the best working condition of the regulation. When the vacuum gauge tube 30 of the present invention is in operation, first, the electron emitter 311 in the cathode emission unit 314 emits electrons under the action of the gate electrode 316, and electrons enter the shield electrode 32 through the electron introduction hole 371 of the electron introduction pole 37. After the anode ring 33 is connected to the high voltage, a symmetrical saddle electric field is formed inside the shield pole 32. The electrons oscillate multiple times in the saddle electric field, striking the gas molecules on page 13 of 30 Form No. A0101 1002001381-0 201230124 and ionizing them to form an ion current. According to the result of the analogy calculation, electrons are more likely to oscillate in the shielded pole 32 of the cylindrical structure, thereby obtaining higher sensitivity. When the ion current comes out from the ion extraction hole 341 close to the collector electrode 36, the ions are collected by the collector 36 and converted into the current signal of the collector electrode 36. The magnitude of the current is proportional to the degree of vacuum. Thereby the degree of vacuum can be indicated. [0029] [0029] The dimensions of the components of the vacuum gauge 30 of the above embodiment are only preferred typical dimensions; the size of the vacuum gauge 30 of the present invention is not uniquely determined, and may be appropriately modified depending on various specific conditions. Get the best working condition for regulation. The diameters of the electron introduction hole 3 71 and the ion extraction hole 3 41 need to be designed according to actual conditions, especially the ion extraction hole 341, and it is necessary to consider not affecting the oscillation of electrons in the saddle field, and at the same time ensuring that enough tables reach the collector 36, Make a reasonable design. The vacuum gauge tube 30 in the first embodiment of the present invention has the following advantageous effects: The electron emitter 311 in the cold cathode 31 includes a carbon nanotube tubular structure, and the complex electron emission tip 306 extends from one end of the tubular structure of the carbon nanotube Therefore, the electron launcher 31 l· has better field emission performance. Therefore, it is only necessary to apply a small voltage to the gate electrode 316 to cause the electron emitter 311 to emit electrons. Since the voltage applied to the gate 316 is lowered, electrons in the shield electrode 32 are less likely to be attracted by the gate 316. 'The electron has a longer path in the shield electrode μ' so as to collide with the gas in the shield electrode 32 to ionize the gas. The sensitivity of the vacuum gauge 30 is increased. A second embodiment of the present invention provides a vacuum gauge comprising a cold cathode, a shield, an anode ring, an electron lead-in, an ion extractor, a reflector, and a collector. Gentleman of vacuum gauge in the second embodiment 100100769 Form No. A0101 Page 14 of 30 1002001381-0 201230124 Ο [0030]
構與第-實施例中的真空規管的結構相似，其區別在於 ’第二實施例中的真^規管中的電子發射體的結構與第 一實施例中的電子發射體311的結構不同。請參閱圖8， 本發明第二實施例中的真空規管中所採用的電子場發射 體20包括一奈米碳管複合線狀結構。所述奈米碳管複合 線狀結構包括一導電線狀結構220及一奈米碳管層21〇設 置在所述導電線狀結構220的表面，所述奈米碳管層21〇 環繞所述導電線狀結構2 2 0形成一奈米碳管管狀結構，在 所述奈米碳管複合線狀結構的一端，所述奈米碳管管狀 結構伸出複數電子發射W端2 Q .6 »所述奈.米碳管複合線狀 結構具有複數電子發射尖端206的一端為類圓錐形，作為 電子發射部212。具體地，所述導電線狀結旛220的整個 表面被所述奈米碳管層210包覆。該奈米碳管管狀結構的 長度大於所述導電線狀結構220的長度^所述奈米碳管層 210為至少一自支撐的奈米碳管膜或奈米碳管線纏繞在所 述導電線狀結構2 2 0的表面.形成》 所述導電線狀結構2 2 0具有支撐所述奈米碳管管狀結構的 作用，所以該導電線狀結構220應具有一定的強度及韌性 。導電線狀結構220的材料可為單質金屬，所述單質金屬 材料可為金、銀、銅或鋁等金屬材料。所述導電線狀結 構220的材料也可為金屬合金材料，如銅錫合金。所述導 電線狀結構220的材料還可為碳纖雉等導電的非金屬材料 或導電的金屬氧化物等。所述導電線狀結構220還可為具 有一導電層的複合線狀結構，如在銅錫合金表面進一步 塗覆一層鋁膜；還可在一柔性材料如纖維絲的表面鍍金 100100769 表單編號Α0101 第15頁/共30頁 1002001381-0 201230124 膜。所述導電線狀結構220的直徑不限，只要該導電線狀 結構220具有一定強度即可。優選地，所述導電線狀結構 220的直徑範圍為1〇微米到30微米。當導電線狀結構220 為鋁絲，該鋁絲的直徑可為25微米。本實施例中，該導 電線狀結構2 2 0為金絲，該金絲的直徑可為18微米。 [0031] 由於所述電子發射體20的奈米碳管管狀結構中設置有一 導電線狀結構220，因此該導電線狀結構220可支撐所述 奈米碳管管狀結構，且使奈米碳管管狀結構不易變形， 進一步地該導電線狀結構220可使電子發射體2〇的導電性 增加，使電子發射體2〇更易於發射電子。 [0032] 該電子發射體2〇的製備方法，其包括以下步驟：步驟 S201，提供一導電線狀結構’及至少“奈米碳管膜或至 少一奈米碳管線。步驟S202，將所述至少一奈米碳管膜 或至少一奈米碳管線纏繞在所述導電線狀結構表面形成 一奈米碳管複合線狀結構。章〖麟备2|)3。，槔斷所述奈米碳 管複合線狀結構得到電子發射韙20。 : . ... ： [0033] 本發明第二實施例中的真空規管具有以下有益效果：冷 陰極中的電子發射體包括包括一奈米碳管複合線狀结構 ，該奈米碳管複合線狀結構包括一奈米竣管管狀結構及 一導電線狀結構，該導電線狀結構設置於所述奈米碳管 管狀結構的線狀轴心處，使該奈米*炭管複合線狀并構的 導電性提高，從而使電子發射體更加易於發射出電子， 從而栅極上所需施加的電壓降低’使真空規管的靈敏产 提高。 100100769 表單編號A0101 第16頁/共30頁 1002001381-0 201230124 [0034] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做的變化，都應包含在 本發明所要求保護的範圍之内。 [0035] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施例 ，自不能以此限制本案之申請專利範圍‘。舉凡習知本案 技藝之人士援依本發明之精神所作之等效修飾或變化， 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0036] [0037] 圖1係本發明第一實施例的真空規管結構示意圖。 圖2係本發明第一實施例提供的真空規管中所採用的電子 發射體的結構示意圖。 [0038] 圖3係本發明第一實施例提供的真空規管中所採用的電子 發射體的掃描電鏡照片。 [0039] 圖4係本發明第一實施例提供的系実規管中所採用的電子 發射體的剖視圖。 [0040] 圖5係本發明第一實施例提供的真空規管中所採用的電子 發射體的電子發射部的掃描電鏡照片。 [0041] 圖6係本發明第一實施例提供的真空規管中所採用的電子 發射體的開口的掃描電鏡照片。 [0042] 圖7係本發明第一實施例提供的真空規管中所採用的電子 發射體的電子發射尖端的透射電鏡照片。 100100769 圖8係本發明第二實施例提供的真空規管中所採用的電子 表單編號A0101 第17頁/共30頁 1002001381-0 [0043] 201230124 發射體的結構示意圖。 【主要元件符號說明】 [0044] 20、 311 :電子發射體 [0045] 30 ： 真空規管 [0046] 31 ： 冷陰極 [0047] 32 ： 屏蔽極 [0048] 33 ： 陽極環 [0049] 34 ： 離子引出極 [0050] 35 ： 反射極 [0051] 36 ： 收集極 [0052] 37 ： 電子引入極 [0053] 38 ： 外殼 [0054] 39 ： 芯柱 [0055] 40 ： 真空規管的開口 [0056] 220 .導電線狀結構 [0057] 210 :奈米碳管層 [0058] 302 :奈米碳管管狀結構的第一端 [0059] 304 :奈米碳管管狀結構的第二端 [0060] 306 、206 :電子發射尖端 [0061] 308 、212 :電子發射部 100100769 表單編號 A0101 第 18 頁/共 30 頁 1002001381-0 201230124 [0062] [0063] [0064] [0065] [0066] [0067] ❹ 310 :電子發射體的開口 314 :陰極發射單元 312 :基底 316 :柵極 341 :離子引出孔 371 :電子引入孔 100100769 表單編號Α0101 第19頁/共30頁 1002001381-0The structure is similar to that of the vacuum gauge tube of the first embodiment, except that the structure of the electron emitter in the true tube in the second embodiment is different from that of the electron emitter 311 in the first embodiment. . Referring to Figure 8, the electron field emitter 20 employed in the vacuum gauge of the second embodiment of the present invention comprises a carbon nanotube composite wire structure. The carbon nanotube composite linear structure includes a conductive linear structure 220 and a carbon nanotube layer 21 disposed on a surface of the conductive linear structure 220, and the carbon nanotube layer 21 surrounds the The electrically conductive linear structure 220 forms a tubular structure of a carbon nanotube, and at one end of the carbon nanotube composite linear structure, the tubular structure of the carbon nanotube extends a plurality of electron emission W ends 2 Q .6 » The nanometer carbon nanotube composite linear structure has a conical shape at one end of the complex electron emission tip 206 as an electron emission portion 212. Specifically, the entire surface of the conductive linear crucible 220 is covered by the carbon nanotube layer 210. The length of the tubular structure of the carbon nanotubes is greater than the length of the electrically conductive linear structure 220. The carbon nanotube layer 210 is at least one self-supporting carbon nanotube film or a nanocarbon line wound around the conductive line. The surface of the structure 2 20 is formed. The conductive linear structure 220 has a function of supporting the tubular structure of the carbon nanotube, so the conductive linear structure 220 should have a certain strength and toughness. The material of the conductive linear structure 220 may be an elemental metal, and the elemental metal material may be a metal material such as gold, silver, copper or aluminum. The material of the conductive linear structure 220 may also be a metal alloy material such as a copper-tin alloy. The material of the wire-like structure 220 may also be a conductive non-metallic material such as carbon fiber or a conductive metal oxide or the like. The conductive linear structure 220 may also be a composite linear structure having a conductive layer, such as further coating an aluminum film on the surface of the copper-tin alloy; or plating a surface of a flexible material such as a fiber 100100769 Form No. 1010101 15 pages/total 30 pages 1002001381-0 201230124 Membrane. The diameter of the conductive linear structure 220 is not limited as long as the conductive linear structure 220 has a certain strength. Preferably, the electrically conductive linear structure 220 has a diameter ranging from 1 〇 micrometer to 30 micrometers. When the electrically conductive wire structure 220 is an aluminum wire, the aluminum wire may have a diameter of 25 microns. In this embodiment, the wire-like structure 220 is a gold wire, and the wire may have a diameter of 18 microns. [0031] Since the conductive carbon structure 220 is disposed in the tubular structure of the carbon nanotube of the electron emitter 20, the conductive linear structure 220 can support the tubular structure of the carbon nanotube and make the carbon nanotube The tubular structure is not easily deformed, and further, the conductive linear structure 220 can increase the conductivity of the electron emitter 2, making it easier for the electron emitter 2 to emit electrons. [0032] The method for preparing the electron emitter 2A, comprising the following steps: Step S201, providing a conductive linear structure 'and at least a carbon nanotube film or at least one nano carbon line. Step S202, the At least one carbon nanotube film or at least one nano carbon line is wound around the surface of the conductive linear structure to form a carbon nanotube composite linear structure. Chapter 〖麟备2|) 3., the rice is cut off The carbon tube composite linear structure obtains electron emission enthalpy 20. The vacuum gauge tube in the second embodiment of the present invention has the following beneficial effects: the electron emitter in the cold cathode includes one nanometer carbon. a composite wire-like structure comprising a nanotube structure and a conductive linear structure disposed on a linear axis of the tubular structure of the carbon nanotube At the same time, the conductivity of the nano-carbon tube composite linear structure is improved, so that the electron emitter is more likely to emit electrons, so that the voltage applied on the gate is lowered, which makes the sensitivity of the vacuum gauge increase. 100100769 Form No. A0101 Page 16 / </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; [0035] In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and the application of the case cannot be limited thereby. The scope of the patents is intended to be included in the scope of the following claims. [0036] BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic view showing the structure of an electron emitter used in a vacuum gauge according to a first embodiment of the present invention. [0038] FIG. 3 is a first embodiment of the present invention. A scanning electron micrograph of an electron emitter used in a vacuum gauge provided. [0039] FIG. 4 is a cross-sectional view of an electron emitter used in a system of the first embodiment of the present invention. 5 is a scanning electron micrograph of an electron-emitting portion of an electron emitter used in a vacuum gauge according to a first embodiment of the present invention. [0041] FIG. 6 is a vacuum gauge according to a first embodiment of the present invention. A scanning electron micrograph of the opening of the electron emitter used in the tube. [0042] Figure 7 is a transmission electron micrograph of the electron emission tip of the electron emitter used in the vacuum gauge tube according to the first embodiment of the present invention. 8 is an electronic form number A0101 used in the vacuum gauge provided by the second embodiment of the present invention. Page 17/30 pages 1002001381-0 [0043] 201230124 Schematic diagram of the structure of the emitter. [Description of main component symbols] [0044] 20, 311: electron emitter [0045] 30 : vacuum gauge [0046] 31 : cold cathode [0047] 32 : shield pole [0048] 33 : anode ring [0049] 34 : Ion-exit pole [0050] 35 : Reflector [0051] 36 : Collector [0052] 37 : Electron-introducing pole [0053] 38 : Housing [0054] 39 : Core column [0055] 40 : Vacuum gauge opening [0056 220. Conductive wire structure [0057] 210: carbon nanotube layer [0058] 302: first end of the carbon nanotube tubular structure [0059] 304: second end of the carbon nanotube tubular structure [0060] 306, 206: electron emission tip [0061] 308, 212: electron emission unit 100100769 Form No. A0101 Page 18 of 30 1002001381-0 201230124 [0063] [0064] [0067] [0067] ❹ 310: opening 314 of electron emitter: cathode emitting unit 312: substrate 316: gate 341: ion extracting hole 371: electron introducing hole 100100769 Form No. 1010101 Page 19 of 30 1002001381-0