201239922 六、發明說明： 【發明所屬之技術領域】 本申請案係基於2011年2月16日提出申請之曰本專 利申請20 1 1 -3 0 5 62號主張優先權，其全部揭示內容藉由 參考倂入本文中。 本發明係有關使用作爲垂直磁性記錄媒體中之軟磁性 層的Co系磁性記錄用軟磁性合金以及濺鍍靶材，以及具 備該軟磁性層之磁性記錄媒體。 【先前技術】 近幾年來，垂直磁性記錄之進步顯著，爲了驅動之大 容量化，已進展磁性記錄密度化，且可實現比以往普及之 面內磁性記錄方式更高之密度之垂直磁性記錄方式已實用 化。此處，所謂垂直磁性記錄方式，係垂直磁性記錄媒體 之磁性膜中相對於媒體面之磁化容易軸以配向於垂直方向 之方式形成者，且適用於高密度化之方法。關於該磁性記 錄方式，已開發作爲具有提高記錄密度之磁性記錄層及軟 磁性層及中間層之多層記錄媒體。而且，該磁性記錄層一 般係使用CoCrPt-Si02系合金。 另一方面，關於軟磁性膜，於特開2008-299905號公 報（專利文獻1 )或特開2008- 1 89996號公報（專利文獻 2)中已提案於Co或Fe之軟磁性元素爲基礎，添加改善 非晶性之Zr、Hf、Ta、Nb及B之合金。對該垂直磁性記 錄媒體之軟磁性膜層要求高飽和磁通（magnetic flux)密 -5- 201239922 度、高的非晶性及高耐蝕性。 且’作爲2層記錄媒體之軟磁性層，已提案有Fe-Co-B系化合物之軟磁性膜，例如，如特開2004-346423號公 報（專利文獻3 )中所揭示，提案有於剖面微組織中之不 存在硼化物層之區域所描繪之最大內接圓之直徑爲30ym 以下之Fe-Co-B濺鍍靶。 對於上述軟磁性膜之成膜，一般係使用磁控濺鍍法》 該磁控濺鍍法係在靶材之背後配置磁鐵，於靶材表面洩漏 磁通，藉由於該洩漏磁通領域將電漿收束而可拘束成膜之 濺鍍法。該磁控濺鍍法由於具有在靶材之濺鍍表面上洩漏 磁通之特.徵，故於IG材本身之導磁率（magnetic permeability )高時，於靶材之濺鍍表面難以形成磁控濺 鍍法所必要之充分洩漏磁通。因此，專利文獻3中已提案 不得不極力減低靶材本身之導磁率之要求。 然而，上述靶製品厚度之界限爲5mm左右，若爲其 以上之厚度，則無法產生充分之洩漏磁通，故有無法進行 正常之磁控濺鍍之問題。且，該靶材由於要求於成膜時係 高磁通密度，故期望爲以Fe爲基礎之材料，但此情況或 有耐蝕性之問題，且靶材有因氧化而使膜品質劣化，於濺 鍍時於氧化部引起異常放電而成爲濺鍍不良之情況。 爲解決此問題，於特開2007-28474 1號公報（專利文 獻4)中，雖報導不使磁性特性劣化而提高耐蝕性之軟磁 性靶之製作，但對於優異之非晶性則未記載》 201239922 【發明內容】 本發明人等現已發現藉由添加自Ta、Nb及V選擇之 (A )群元素可提高非晶性，且藉由添加自Cr、Mo及W 選擇之（B)群元素可提高硬度，藉由添加自Ti、Zr及 Hf選擇之（C)群元素可確保非晶性，且該等（A)群、 (B)群及（C)群元素亦具有耐飩性改善效果。藉此可提 供非晶性、耐蝕性、硬度優異之磁性記錄用軟磁性合金。 又，非晶性對於雜訊減低 '硬度對耐衝擊性、耐蝕性對碳 膜之薄膜化分別具有效果。 因此’本發明之目的係提供非晶性、硬度及耐蝕性均 優異之垂直磁性記錄媒體用軟磁性合金，以及製作該合金 薄膜所用之濺鎪靶材。 依據本發明之一樣態，係提供一種磁性記錄用軟磁性 合金，其係以原子％計含有 〇.5%以上之（人）由^、：^15及乂所組成群組選出之 元素之一種或兩種以上， 0.5%以上之（B)由Cr、Mo及W所組成群組選出之 元素之一種或兩種以上， 0〜5%之（C)由Ti、Zr及Hf所組成群組選出之元素 之一種或兩種以上， 0〜3 0%之（D )由Ni及Μη所組成群組選出之元素之 一種或兩種， 0〜5%之（Ε)由Α1及Cu所組成群組選出之元素之一 種或兩種， 201239922 〇〜10%之（F)由Si、Ge、P、B及C所組成群組選出 之兀素之一種或兩種以上，且 其餘部份爲Co及Fe以及無法避免之雜質所構成之磁 性記錄用軟磁性合金，且201239922 VI. Description of the invention: [Technical field of the invention] This application claims priority based on the patent application No. 20 1 1 - 3 0 5 62, filed on Feb. 16, 2011, the entire disclosure of which is Refer to this article. The present invention relates to a Co-based soft magnetic alloy for magnetic recording and a sputtering target which are used as a soft magnetic layer in a perpendicular magnetic recording medium, and a magnetic recording medium having the soft magnetic layer. [Prior Art] In recent years, the progress of perpendicular magnetic recording has been remarkable, and in order to increase the capacity of driving, magnetic recording density has progressed, and a perpendicular magnetic recording method capable of achieving higher density than the conventional in-plane magnetic recording method has been realized. Has been put into practical use. Here, the perpendicular magnetic recording method is a method in which the magnetic film of the perpendicular magnetic recording medium is formed so as to be aligned in the vertical direction with respect to the magnetization of the medium surface, and is suitable for a method of increasing the density. Regarding this magnetic recording method, a multilayer recording medium having a magnetic recording layer and a soft magnetic layer and an intermediate layer having an improved recording density has been developed. Further, the magnetic recording layer is generally a CoCrPt-SiO 2 based alloy. On the other hand, the soft magnetic film is proposed based on the soft magnetic element of Co or Fe in JP-A-2008-299905 (Patent Document 1) or JP-A-2008-189996 (Patent Document 2). An alloy of Zr, Hf, Ta, Nb and B which improves the amorphous property is added. The soft magnetic film layer of the perpendicular magnetic recording medium is required to have a high magnetic flux density of -5 - 201239922 degrees, high amorphousness, and high corrosion resistance. In addition, as a soft magnetic layer of a two-layer recording medium, a soft magnetic film of a Fe-Co-B-based compound has been proposed. For example, as disclosed in Japanese Laid-Open Patent Publication No. 2004-346423 (Patent Document 3), The Fe-Co-B sputtering target having a diameter of the largest inscribed circle depicted in the region where the boride layer is absent in the microstructure is 30 μm or less. For the film formation of the above soft magnetic film, a magnetron sputtering method is generally used. The magnetron sputtering method places a magnet behind the target to leak magnetic flux on the surface of the target, and the magnetic field is leaked due to the leakage flux. The slurry can be restrained by the sputtering method. The magnetron sputtering method has the characteristic of leaking magnetic flux on the sputtering surface of the target, so when the magnetic permeability of the IG material itself is high, it is difficult to form a magnetic control on the sputtering surface of the target material. Sufficient leakage flux necessary for sputtering. Therefore, Patent Document 3 has proposed that the magnetic permeability of the target itself has to be reduced as much as possible. However, the thickness of the target product is about 5 mm, and if it is more than the above thickness, sufficient leakage magnetic flux cannot be generated, so that there is a problem that normal magnetron sputtering cannot be performed. Further, since the target is required to have a high magnetic flux density at the time of film formation, it is desirable to be a material based on Fe. However, in this case, there is a problem of corrosion resistance, and the target material is deteriorated due to oxidation. At the time of sputtering, abnormal discharge is caused in the oxidized portion, which may cause sputtering failure. In order to solve this problem, JP-A-2007-28474 (Patent Document 4) discloses the production of a soft magnetic target that does not deteriorate magnetic properties and improves corrosion resistance, but is not described for excellent amorphous properties. 201239922 SUMMARY OF THE INVENTION The present inventors have found that amorphism can be improved by adding (A) group elements selected from Ta, Nb, and V, and (B) groups selected by adding Cr, Mo, and W The element can increase the hardness, and the amorphous group can be ensured by adding the (C) group element selected from Ti, Zr and Hf, and the (A) group, the (B) group and the (C) group element are also resistant to enthalpy. Improve the effect. Thereby, a soft magnetic alloy for magnetic recording which is excellent in amorphous, corrosion resistance and hardness can be provided. Further, the amorphous property has an effect on the reduction of the noise, the hardness, the impact resistance, and the corrosion resistance, respectively, to the thinning of the carbon film. Therefore, the object of the present invention is to provide a soft magnetic alloy for a perpendicular magnetic recording medium which is excellent in amorphousness, hardness and corrosion resistance, and a sputtering target for producing the alloy film. According to the same aspect of the present invention, there is provided a soft magnetic alloy for magnetic recording, which is a kind of an element selected from the group consisting of 、, 5% or more (man) of ^, :15, and 乂 in atom%. Or two or more, 0.5% or more (B) one or more elements selected from the group consisting of Cr, Mo, and W, and 0 to 5% of (C) a group consisting of Ti, Zr, and Hf One or more of the selected elements, 0 to 30% of (D) one or two of the elements selected from the group consisting of Ni and Μη, and 0 to 5% of (Ε) consisting of Α1 and Cu One or two elements selected by the group, 201239922 〇~10% (F) one or more of the elements selected from the group consisting of Si, Ge, P, B, and C, and the rest are a soft magnetic alloy for magnetic recording composed of Co and Fe and unavoidable impurities, and
Fe: Co比爲10:90〜70:30，且（A)群元素、（B)群 元素及（C)群元素之合計量爲前述合金之1〇〜30%» 依據本發明另一樣態，係提供以本發明之磁性記錄用 軟磁性合金構成之濺鍍靶材。 依據本發明又另一樣態，係提供具備以本發明之磁性 記錄用軟磁性合金構成之軟磁性層之磁性記錄媒體。 【實施方式】 以下具體說明本發明。只要無特別明示，則本說明書 中之「％」意指原子％者。 本發明之磁性記錄用軟磁性合金係由以原子％計含有 (comprising) 0.5 %以上之（A)由Ta、Nb及V所組成群 組選出之元素之一種或兩種以上，0.5%以上之（B )由Cr 、Mo及W所組成群組選出之元素之一種或兩種以上， 0〜5%之（C )由Ti、Zr及Hf所組成群組選出之元素之一 種或兩種以上，〇〜30%之（D )由Ni及Μη所組成群組選 出之元素之一種或兩種，〇〜5%之（Ε )由Α1及Cu所組成 群組選出之元素之—種或兩種，〇〜1〇%之（F )由Si、Ge 、P、B及C所組成群組選出之元素之一種或兩種以上’ 且其餘部份爲Co及Fe以及無法避免之雜質所構成’較好 -8 - 201239922 實質上由（consisting essentially of)該等兀素及不可避 免雜質所構成，更好由（consisting of)該等元素及不可 避免雜質所構成。本發明之合金，Fe : Co比爲 10:9 0〜70:30，且（A)群元素、（B)群元素及（C)群元 素之合計量爲前述合金之1〇~30%。The Fe:Co ratio is 10:90 to 70:30, and the total amount of the (A) group element, the (B) group element, and the (C) group element is 1 to 30% of the foregoing alloy. According to another aspect of the present invention A sputtering target comprising the soft magnetic alloy for magnetic recording of the present invention is provided. According to still another aspect of the invention, there is provided a magnetic recording medium comprising a soft magnetic layer comprising the soft magnetic alloy for magnetic recording of the present invention. [Embodiment] Hereinafter, the present invention will be specifically described. Unless otherwise stated, "%" in this specification means atomic %. The soft magnetic alloy for magnetic recording according to the present invention is one or more selected from the group consisting of (A) a group consisting of Ta, Nb and V in an atomic %, 0.5% or more, 0.5% or more. (B) one or more elements selected from the group consisting of Cr, Mo, and W, and 0 to 5% of (C) one or more elements selected from the group consisting of Ti, Zr, and Hf , 〇~30% of (D) one or two of the elements selected by the group consisting of Ni and Μη, 〇~5% (Ε) of the elements selected by the group consisting of Α1 and Cu Species, 〇~1〇% (F) consists of one or more of the elements selected from the group consisting of Si, Ge, P, B, and C' and the remainder is composed of Co and Fe and unavoidable impurities. 'Better-8 - 201239922 consists essentially of these elements and inevitable impurities, and is better composed of these elements and unavoidable impurities. In the alloy of the present invention, the Fe:Co ratio is 10:90 to 70:30, and the total amount of the (A) group element, the (B) group element, and the (C) group element is 1 to 30% of the above alloy.
Fe及Co係構成軟磁性元素者，以10:90〜70:30之 Fe: Co比包含於合金中。Fe與Co之比，爲確保軟磁性且 對保合磁通密度、非晶性、硬度以及耐蝕性大有影響之參 數，尤其於Fe: Co之比未達10時飽和磁通密度不充分， 且超過70時，耐蝕性變差。 (A.)群元素爲自Ta、Nb及V所組成組群選出之一 種或兩種以上之改善非晶性及硬度之元素，於合金中，含 有0.5原子％以上，較好爲2〜20原子％，更好爲4~15原 子％。未達0.5原子％時，上述改善效果不足。 (B )群元素爲自Cr、Mo及W所組成組群選出之一 種或兩種以上之改善非晶性及耐蝕性之元素，於合金中， 含有0.5原子％以上’較好爲1〜20原子％，更好爲2〜10 原子％。未達〇·5原子％時，上述改善效果不足。 (C )群元素爲自Ti ' Zr及Hf所組成組群選出之一 種或兩種以上之改善非晶性之元素，於合金中，含有〇〜5 原子％，較好爲2〜4原子％。未達5原子％時，無法充分獲 得飽和磁通密度。 (A)群元素、（B)群元素及（c)群元素之合計量 爲合金之1〇~3〇%。（ A )群元素、（B )群元素及（C ) -9- 201239922 群元素分別爲改善非晶性及耐蝕性之元素，但該等元素之 合計量未達10原子％時，其效果不充分，另一方面，超過 3 0%時，無法充分獲得飽和磁通密度。 (D )群元素爲自Ni及Μη所組成組群選出之一種或 兩種之調整飽和磁通密度之任意元素，於合金中，含有 0〜30原子％，較好爲多於0%且爲30原子％，更好爲10原 子％以下，又更好爲1〜5原子％。若在該等範圍內，則容 易獲得飽和磁通密度。 (Ε)群元素爲自Α1及Cu所組成群組選出之一種或 兩種之提高耐蝕性之任意元素，於合金中，含有〇〜5原子 %，較好爲多於0%且爲5原子％，更好爲1〜4原子％。若 在該等範圍內，則非晶性不易降低。 (F )群元素爲自Si、Ge、P、B及C所組成群組選 出之一種或兩種以上之改善非晶性之任意元素，係含有 0〜10原子％，較好爲超過0%且爲10原子％，更好爲1~8 原子％。若在該等範圍內，則上述改善效果不會飽和，可 防止飽和磁通密度之降低。 本發明之濺鍍靶材係以上述磁性記錄用軟磁性合金構 成。濺鍍靶材厚度並未特別限制，即使超過5mm之厚度 亦可進行正常濺鍍，較好爲7mm以上。如此藉由使用本 發明之濺鍍靶材進行濺鍍，可製作具備以上述磁性記錄用 軟磁性合金構成之軟磁性層之磁性記錄媒體。 〔實施例〕 -10- 201239922 以下針對本發明之合金以實施例加以具體說明》 通常，垂直磁性記錄媒體中之種晶層係以與其成分相 同成份之濺鏟靶材進行濺鍍，於玻璃基板等之上成膜而得 。此處，使利用濺鍍而成膜之薄膜急冷。作爲本發明之供 試材，使用以單輥式之急冷裝置製作之急冷薄帶。此係利 用簡易之液體急冷薄帶評價實際上由濺鍍而成膜之薄帶之 隨成分而對諸特性之影響者。 〔急冷薄帶之製作條件〕 作爲急冷薄帶之製作條件，係將表1及表2所示之各 成份秤量之原料20g以直徑40mm左右之水冷銅鑄模予以 減壓，於Ar中電弧熔解，作成急冷薄帶之熔解母材。急 冷薄帶之作成條件，係以單輥方式於直徑15mm之石英管 中，設置該熔解母材，將流出熱液噴嘴直徑設爲1mm，環 境氣壓61kPa，噴霧壓差69kPa，銅輕（直徑300mm)之 旋轉數3000rpm，銅輥與流出熱液噴嘴之間隙爲〇.3mm而 流出熱液。流出熱液溫度設爲恰使各熔解母材燒穿。如此 製作之急冷薄帶作爲供試材，評價以下項目。 〔急冷薄帶之構造〕 通常，若測定非晶材料之X射線繞射圖型，則未見到 繞射峰，成爲非晶所特有之光暈圖型。又，並非完全非晶 時，雖見到繞射峰，但與結晶材料比較，峰高度較低，且 意見到光暈圖型。此係依據下述方法進行非晶性之評價。 -11 - 201239922 作爲非晶性之評價，係於玻璃板以雙面膠帶貼附試材 ，以X射線繞射裝置獲得繞射圖型。此時，以測定面成爲 急冷薄帶之銅輥接觸面之方式將供試材貼附於玻璃板上。 以X射線源爲Cu-Κα線，掃描速度爲4°/分鐘而測定》於 該繞射圖型中可確認到光暈圖型者，非晶性評價爲〇，完 全未見到光暈圖型者，評價爲X。 〔急冷薄帶之耐鈾性（NaCl)〕 於玻璃板上以雙面膠帶貼附供試材，進行5%NaCl-35 °C -16小時之鹽水噴霧試驗，全部生銹評價爲X，一部份生 鍵評價爲〇。 〔急冷薄帶之耐蝕性（HN〇3)〕 秤量50mg之供試材，滴加3原子％HN〇3水溶液以後 ，於室溫放置1小時後，分析於3% HN〇3水溶液中之Co 溶出量。Co溶出量未達5 0 Oppm時評價爲〇，500以上未 達lOOOppm時評價爲八，lOOOppm以上時評價爲X。 〔急冷薄帶之硬度〕 將急冷薄帶縱向埋入樹脂並硏磨，以維卡硬度計進行 測定。測定荷重爲50g，以n=10平均進行評價。1 000HV 以上記爲◎，760~未達1 000HV記爲〇，未達760HV記爲 △。 -12- 201239922 〔急冷薄帶之飽和磁通密度〕 以VSM裝置（振動試料型磁力計），於施加磁場 1 2 00kA/m測定。供試材重量爲15mg左右，〇 π以上且未 達1·〇Τ之飽和磁通密度者記爲〇，i.oT以上者記爲◎。 未達0.3T者記爲X。 以下’於表1及表2顯示本發明之成分組成，且於表 3、4顯示其效果的飽和磁通密度、非晶性、耐鈾性、硬度 -13- 201239922Fe and Co are soft magnetic elements, and are contained in the alloy at a Fe:Co ratio of 10:90 to 70:30. The ratio of Fe to Co is a parameter that ensures soft magnetic properties and has a large influence on the retention magnetic flux density, amorphousness, hardness, and corrosion resistance, especially when the ratio of Fe: Co is less than 10, and the saturation magnetic flux density is insufficient. When it exceeds 70, the corrosion resistance deteriorates. (A.) The group element is one or two or more elements selected from the group consisting of Ta, Nb, and V to improve the amorphousness and hardness, and is 0.5 atom% or more, preferably 2 to 20 in the alloy. Atomic %, more preferably 4 to 15 atom%. When the amount is less than 0.5 atom%, the above improvement effect is insufficient. (B) The group element is one or two or more elements selected from the group consisting of Cr, Mo, and W to improve the amorphousness and corrosion resistance, and the alloy contains 0.5 atom% or more, preferably 1 to 20 Atomic %, more preferably 2 to 10 atomic %. When the amount is less than 5 atom%, the above improvement effect is insufficient. (C) The group element is one or two or more elements selected from the group consisting of Ti ' Zr and Hf to improve the amorphous property, and contains 〇 5 atom%, preferably 2 to 4 atom% in the alloy. . When the atomic weight is less than 5 atom%, the saturation magnetic flux density cannot be sufficiently obtained. The total amount of (A) group elements, (B) group elements, and (c) group elements is 1〇~3〇% of the alloy. (A) group elements, (B) group elements, and (C) -9- 201239922 group elements are elements for improving amorphous and corrosion resistance, respectively, but when the total amount of these elements is less than 10 atom%, the effect is not Sufficient, on the other hand, when it exceeds 30%, the saturation magnetic flux density cannot be sufficiently obtained. (D) The group element is any one of two or two selected from the group consisting of Ni and Μη, which is adjusted to have a saturation magnetic flux density, and is 0 to 30% by atom, preferably more than 0%, in the alloy. 30 atom%, more preferably 10 atom% or less, still more preferably 1 to 5 atom%. If it is within these ranges, the saturation magnetic flux density is easily obtained. The (Ε) group element is any one of two or two selected from the group consisting of ruthenium 1 and Cu to improve corrosion resistance, and contains 〇 5 atom%, preferably more than 0% and 5 atoms in the alloy. %, preferably 1 to 4 atom%. If it is within these ranges, the amorphous property is not easily lowered. (F) The group element is any element selected from the group consisting of Si, Ge, P, B, and C to improve the amorphous property, and contains 0 to 10 atom%, preferably more than 0%. It is 10 atom%, more preferably 1 to 8 atom%. If it is within these ranges, the above-mentioned improvement effect is not saturated, and the decrease in saturation magnetic flux density can be prevented. The sputtering target of the present invention is composed of the above-described soft magnetic alloy for magnetic recording. The thickness of the sputtering target is not particularly limited, and even if the thickness exceeds 5 mm, normal sputtering can be performed, preferably 7 mm or more. By performing sputtering using the sputtering target of the present invention, a magnetic recording medium having a soft magnetic layer made of the above-described soft magnetic alloy for magnetic recording can be produced. [Examples] -10-201239922 Hereinafter, the alloy of the present invention will be specifically described by way of examples. Generally, the seed layer in a perpendicular magnetic recording medium is sputtered with a spatter target having the same composition as that of the glass substrate. It is obtained by filming on the top. Here, the film formed by sputtering is rapidly cooled. As the test material of the present invention, a quenched ribbon produced by a single roll type quenching device was used. This is done by using a simple liquid quenching ribbon to evaluate the influence of the composition of the thin strip which is actually formed by sputtering on the characteristics. [Production conditions of the quenched ribbon] As a production condition of the quenched ribbon, 20 g of the raw materials weighed in each of the components shown in Tables 1 and 2 were decompressed with a water-cooled copper mold having a diameter of about 40 mm, and arc-melted in Ar. It is made into a melting base material for the quenching ribbon. The condition of the quenching ribbon is set in a single-roller method in a quartz tube having a diameter of 15 mm, and the molten base material is set, and the diameter of the flowing hot liquid nozzle is set to 1 mm, the ambient pressure is 61 kPa, the spray pressure difference is 69 kPa, and the copper is light (300 mm in diameter). The rotation number is 3000 rpm, and the gap between the copper roll and the flowing hot liquid nozzle is 〇3 mm and the hot liquid flows out. The temperature of the effluent hot liquid was set such that each molten base material was burned through. The quenched ribbon thus produced was used as a test material, and the following items were evaluated. [Structure of Quenched Ribbon] Generally, when an X-ray diffraction pattern of an amorphous material is measured, no diffraction peak is observed, and a halo pattern unique to amorphous is obtained. Further, when it is not completely amorphous, although a diffraction peak is observed, the peak height is lower than that of the crystalline material, and a halo pattern is observed. This was evaluated for the amorphousness according to the following method. -11 - 201239922 As a non-amorphous evaluation, a test piece was attached to a glass plate with a double-sided tape, and a diffraction pattern was obtained by an X-ray diffraction device. At this time, the test piece was attached to the glass plate so that the measurement surface became the contact surface of the copper roll of the quenched ribbon. The X-ray source is a Cu-Κα line, and the scanning speed is 4°/min.” The halo pattern can be confirmed in the diffraction pattern, and the amorphous property is evaluated as 〇, and no halo pattern is observed at all. Type, the evaluation is X. [Uranium resistance (NaCl) of the quenched ribbon] The test specimen was attached to the glass plate with double-sided tape, and a salt spray test of 5% NaCl-35 ° C -16 hours was performed. All the rust was evaluated as X, one. The partial birth bond was evaluated as 〇. [Corrosion resistance of the quenched ribbon (HN〇3)] After weighing 50 mg of the test material, a 3 atom% HN〇3 aqueous solution was added dropwise, and after standing at room temperature for 1 hour, the Co was analyzed in a 3% HN〇3 aqueous solution. The amount of dissolution. When the amount of Co eluted was less than 50 ppm, it was evaluated as 〇, and when it was less than 500 ppm, it was evaluated as 8%, and when it was 100 ppm or more, it was evaluated as X. [Hardness of the quenched ribbon] The quenched ribbon was longitudinally embedded in the resin and honed, and measured by a Vicat hardness tester. The load was measured to be 50 g, and the evaluation was performed with n = 10 average. 1 000 HV or more is recorded as ◎, 760~ is less than 1 000 HV, and ≥ 760 HV is recorded as △. -12- 201239922 [Saturation magnetic flux density of quenched ribbon] Measured by a VSM device (vibration sample type magnetometer) at an applied magnetic field of 1 2 00 kA/m. The weight of the test material is about 15 mg, and the saturation magnetic flux density of 〇 π or more and less than 1 〇Τ is recorded as 〇, and the above i.oT is recorded as ◎. Those who do not reach 0.3T are recorded as X. Hereinafter, the composition of the present invention is shown in Tables 1 and 2, and the saturation magnetic flux density, amorphousness, uranium resistance, and hardness of the effects are shown in Tables 3 and 4. -13 - 201239922
m μ •绾 5： 莩 成分組成（原子％) ο Ο 雜 雔 Η 錐 H 錐 « 涯 Μ 錐 K 雜 K 錐 « m « 涯 « 狴 雔 « 錐 Η 錐 « 錐 κ 錐 « L其餘 錐 « 錐 « 涵 κ H 錐 K 錐 錐 H m « 錐 H 錐 « 錐 « 錐 « 錐 « 錐 H 錐 Η (F)群 ο CM m — eo oo 03 CO oo e〇 oo oo Ο. CM CQ CO CM (E)群 3 CsJ CM CM — CSJ 一 CM - 一 — — — — — — l£> — — — — — 一 一 «Μ (W群 CJ CM 5 CM o 一 CO 一 一 / Η c Η / Ν h a h $ w ·〇· CO CO 〇 eg CvJ CO **T 卜 o CO eo CO in %f> CO CO u> 卜 卜 σ> σ> (c)群 甶 CSJ CO CM C*5 CO CO eo CO eo CO CO c^l cs) eo •"3* eg CO CsJ CO CM (B)群 s Cvj eg eo S vn C4 cq CM ir> CM CNJ CM CM CJ o Csj 〇 — CO CO in CS) CO CO CO CO CO Ifi ΪΓ> m (A)群 >- s in CO 卜 〇o 60 令 ee o OO CM e〇 oo oo ^5* β 2 00 €〇 CO CO lf> CO o o 二 oo CO <〇 2 o ① to oo CD <D o CO CO ( P D U ο o o 〇 o o δ s S s w w w w s S s s s 8 s s s s 运 o ο o ο U § s s S s s S s s s o o o 运 S s s s o § 宕 § § « u s W 一 CM CO to 卜 oo a> o C^J CO •^p in CO 卜 〇〇 σ> 贫 s s s CO 8 R g CO -14- 201239922 【3谳】m μ •绾5: 莩 composition (atomic %) ο 雔Η chowder cone H cone « Μ Μ cone K 杂 K cone « m « « « 狴雔 « cone Η cone « cone κ cone « L remaining cone « cone « 涵κ H cone K cone cone H m « cone H cone « cone « cone « cone « cone H cone Η (F) group ο CM m — eo oo 03 CO oo e〇oo oo Ο. CM CQ CO CM (E ) Group 3 CsJ CM CM — CSJ CM — 一 — — — — — l£> — — — — — 一一 «Μ (W Group CJ CM 5 CM o One CO One One / Η c Η / Ν hah $ w ·〇· CO CO 〇eg CvJ CO **T 卜o CO eo CO in %f> CO CO u> Bub σ>σ> (c) Group 甶 CSJ CO CM C*5 CO CO eo CO eo CO CO c^l cs) eo •"3* eg CO CsJ CO CM (B) group s Cvj eg eo S vn C4 cq CM ir> CM CNJ CM CM CJ o Csj 〇—CO CO in CS) CO CO CO CO CO Ifi ΪΓ> m (A) group>- s in CO 〇 60 o 60 ee ee o OO CM e〇oo oo ^5* β 2 00 €〇CO CO lf> CO oo two oo CO <〇2 o 1 to oo CD <D o CO CO ( PDU ο oo 〇 Oo δ s S swwwws S sss 8 ssss o ο o ο U § ss S ss S sssooo 运 S ssso § 宕§ § « us W a CM CO to oo a> o C^J CO •^p in CO 〇〇σ> Poor sss CO 8 R g CO -14- 201239922 【3谳】
a 鏟 m S gg Ο Ο 其餘 其餘 其餘 其餘 其餘 其餘 其餘 其餘 其餘 其餘 (F)群 o 04 00 CO 00 SI oo CL. ·—· 0> o CO (B)群 I 5 CSJ — CM (D)群 CM CS) £ί >—< Cs) (A)+(B) +CC) > 8.35 CO 〇〇 o s m (C)群 Μ-» ώ CM §l CO CO (B)群 CQ CM CO in ΙΛ u Ο 〇 CO 0. 35 eo 〇〇 (A)群 > CO CO in oo CO OO ¢0 Η 〇 切 Ο CO <υ Cl. 〇 s s 另 S CO § TO ο CJ § 〇 s § § o s ca cr> o CO CO CO in CO CO 00 CO 5 CO fist s -15- 201239922 【表3】 No 非晶性 耐蝕性 (Ml) 耐蝕性 (ΗΝ0,) 硬 度 飽和磁通密度 1 〇 〇 〇 〇 〇 2 〇 〇 〇 ◎ 〇 3 〇 〇 Δ ◎ 〇 4 〇 〇 〇 ◎ 〇 5 〇 〇 〇 ◎ 〇 6 〇 〇 △ ◎ 〇 7 〇 〇 〇 ◎ 〇 8 〇 〇 〇 ◎ ◎ 9 〇 〇 〇 ◎ ◎ 10 〇 〇 〇 Δ 〇 11 〇 〇 〇 Δ ◎ 12 〇 〇 Δ ◎ ◎ 13 〇 〇 △ ◎ 〇 14 〇 〇 Δ ◎ ◎ 15 〇 〇 〇 ◎ 〇 16 〇 〇 〇 ◎ ◎ 17 〇 〇 〇 ◎ ◎ 18 〇 〇 Δ ◎ ◎ 19 〇 〇 〇 ◎ 〇 20 〇 〇 〇 〇 〇 21 〇 〇 △ ◎ ◎ 22 〇 〇 〇 ◎ 〇 23 〇 〇 〇 ◎ ◎ 24 〇 〇 Δ ◎ ◎ 25 〇 〇 〇 ◎ 〇 26 〇 〇 〇 ◎ 〇 27 〇 〇 〇 ◎ 〇 28 〇 〇 〇 ◎ ◎ 29 〇 〇 〇 ◎ 〇 30 〇 〇 〇 ◎ 〇 31 〇 〇 〇 ◎ 〇 32 〇 〇 〇 ◎ 〇 -16- 201239922a shovel m S gg Ο 其余 rest remaining rest remaining rest remaining rest remaining rest (F) group o 04 00 CO 00 SI oo CL. ··· 0> o CO (B) group I 5 CSJ — CM (D) group CM CS) £ί >—< Cs) (A)+(B) +CC) > 8.35 CO 〇〇osm (C) Group Μ-» ώ CM §l CO CO (B) Group CQ CM CO in ΙΛ u Ο 〇CO 0. 35 eo 〇〇(A) group> CO CO in oo CO OO ¢0 〇 〇 Ο Ο CO <υ Cl. 〇ss Another S CO § TO ο CJ § 〇s § § os Ca cr> o CO CO CO in CO CO 00 CO 5 CO fist s -15- 201239922 [Table 3] No Amorphous corrosion resistance (Ml) Corrosion resistance (ΗΝ0,) Hardness saturation magnetic flux density 1 〇〇〇〇〇 2 〇〇〇 ◎ 〇 3 〇〇 Δ ◎ 〇 4 〇〇〇 ◎ 〇 5 〇〇〇 ◎ 〇 6 〇〇 △ ◎ 〇 7 〇〇〇 ◎ 〇 8 〇〇〇 ◎ ◎ 9 〇〇〇 ◎ ◎ 10 〇 〇〇Δ 〇11 〇 〇〇Δ ◎ 12 〇〇Δ ◎ ◎ 13 〇〇 △ ◎ 〇 14 〇〇 Δ ◎ ◎ 15 〇〇〇 ◎ 〇 16 〇〇〇 ◎ ◎ 17 〇〇〇 ◎ ◎ 18 〇〇 Δ ◎ ◎ 19 〇〇〇 ◎ 〇20 〇〇〇〇〇21 〇〇△ ◎ ◎ 22 〇〇〇◎ 〇23 〇〇〇◎ ◎ 24 〇〇Δ ◎ ◎ 25 〇〇〇◎ 〇26 〇〇〇◎ 〇27 〇〇〇◎ 〇 28 〇〇〇 ◎ ◎ 29 〇〇〇 ◎ 〇 30 〇〇〇 ◎ 〇 31 〇〇〇 ◎ 〇 32 〇〇〇 ◎ 〇-16- 201239922
【表4】 No 非晶性 耐触性 (NaCl) 耐蝕性 (ΗΝ0,) 硬 度 飽和磁通密度 備 註 33 〇 〇 〇 ◎ X 34 〇 〇 〇 〇 X 35 X 〇 〇 Δ 〇 μμ 36 X X X 〇 〇 37 〇 〇 Δ 〇 X 較 38 X 〇 〇 Δ X 39 〇 X X ◎ X 40 〇 〇 〇 Δ X 例 41 〇 X Δ 〇 〇 42 〇 〇 〇 Δ X 首先，針對表1及表2所示之成分組成加以說明》表 1中所示之No. 1〜32爲本發明例，表2中所示之No. 3 3〜41爲比較例。[Table 4] No Amorphous contact resistance (NaCl) Corrosion resistance (ΗΝ0,) Hardness saturation magnetic flux density Remarks 33 〇〇〇◎ X 34 〇〇〇〇X 35 X 〇〇Δ 〇μμ 36 XXX 〇〇37 〇〇Δ 〇X is more than 38 X 〇〇Δ X 39 〇XX ◎ X 40 〇〇〇Δ X Example 41 〇X Δ 〇〇42 〇〇〇Δ X First, the composition of the components shown in Table 1 and Table 2 is added. No. 1 to 32 shown in Table 1 are examples of the present invention, and No. 3 3 to 41 shown in Table 2 are comparative examples.
又，成分組成之記載中，表1各列所記載之以No. 3 爲例，（A)〜（F)群元素之（a)群的Ta爲8原子％， (B)群之Cr爲2原子％’ （C)群之Zr爲4原子％ ’ ( E )群之A1爲1原子％ ’ （F)群之B爲6原子％之含量。 該等之合計量爲21原子％。（A)〜（F)群之其餘部分爲 Co與Fe’其量爲自100減去21原子％而爲79原子％。接 著，由於Co與Fe之比爲Co: Fe = 90:10，若以原子％稱之 ，則意指Co含量爲0.79x90 = 71.1原子％，Fe之含量爲 -17- 201239922 0.79x10 = 7.9 原子 ％ 〇 比較例No. 33、No.34由於（Α)群元素與（Β)群元 素之含量之和較高，故飽和磁通密度低。No. 35之（A) 群元素之含量低，故非晶性不足且硬度亦低》No.36之（ B )群含量低，故非晶性不足且耐蝕性亦不充分。No. 3 7 之（C)群元素之含量高而飽和磁通密度低。No. 38之（E )群元素含量高而飽和磁通密度低。No. 39之（F)群元 素之含量低而飽和磁通密度低且耐蝕性亦不足。No. 40由 於Fe比係較低，故飽和磁通密度不充分。Further, in the description of the component composition, No. 3 is described in each column of Table 1, and the Ta of the group (a) to (F) of the group (A) to (F) is 8 atom%, and the Cr of the group (B) is 2 atom%' (C) group Zr is 4 atom% ' (E) group A1 is 1 atom%' (F) Group B is 6 atom%. The total amount of these is 21 atom%. The remaining portions of the groups (A) to (F) are Co and Fe', and the amount thereof is 21 atom% from 100 minus 79 atom%. Next, since the ratio of Co to Fe is Co:Fe = 90:10, if it is expressed in atomic %, it means that the Co content is 0.79x90 = 71.1 atom%, and the content of Fe is -17-201239922 0.79x10 = 7.9 atom % 〇 Comparative Examples No. 33 and No. 34 have a high saturation magnetic flux density because the sum of the contents of the (Α) group element and the (Β) group element is high. In the case of No. 35 (A), the content of the group element is low, so the amorphousness is insufficient and the hardness is low. The content of the group (B) of No. 36 is low, so the amorphousness is insufficient and the corrosion resistance is also insufficient. No. 3 7 (C) has a high content of elements and a low saturation magnetic flux density. No. 38 (E) has a high content of elements and a low saturation magnetic flux density. No. 39 (F) has a low content of elements and a low saturation magnetic flux density and insufficient corrosion resistance. Since No. 40 has a low Fe ratio, the saturation magnetic flux density is insufficient.
No. 41由於Fe之比係較高，故耐蝕性、尤其是對 NaCl之耐蝕性不足。No. 42之（D)群元素含量高，飽和 磁通密度低。相對於此，本發明例No. l~No. 32均滿足本 發明之條件，故可知非晶性、硬度、耐蝕性及飽和磁通密 度均優異。 如以上所述，依據本發明，可提供非晶性、硬度、耐 蝕性及飽和磁通密度均優異之垂直磁性記錄用軟性合金以 及濺鍍鈀材，以及使用該合金之磁性記錄媒體。 〔濺鍍靶材之製造〕 其次，顯示濺鍍靶材之製造方法。針對表1之No. 3 、14〇.11、>1〇.12、1'4〇.13、1'''1〇.24及表2之]^〇.35、1^〇-38 所示之7種成分組成，秤量熔解原料，以減壓Ar氣體環 境之耐火物坩堝內進行感應加熱熔解，且自坩堝下部之直 徑8mm之噴嘴流出熱液，以Ar氣體霧化。以該氣體霧化 -18 - 201239922 粉末作爲原料，脫氣裝入外徑220mm、內徑210mm、長度 200mm之SC製之罐中。脫氣時之真空到達度設爲1.3xl(T 2Pa。上述之粉末塡充鋼胚加熱至 1150°C，裝入直徑 2 3 0mm之拘束型容器內，以500MPa加壓成形。以上述方 法製作之固化成形體利用金屬線切割、旋轉盤加工、平面 硏磨，加工成直徑1 80mm、厚度7mm之圓盤狀，作爲濺 鍍鈀材。 〔濺鍍膜之製造〕 使用關於該7種類之成分組成之濺鍍靶材，於玻璃基 板上成膜濺鍍膜。X射線繞射圖型’於No. 3、No.l 1、 Νο.12、Νο.13、Ν〇·24 均見到光暈圖型，Νο·35、No.38 見 到結晶峰。且，與急冷薄.帶同樣地進行耐蝕性試驗（鹽水 噴霧試驗），結果 Νο·3、No.ll、Νο·12、No.13、No.24 均未生銹，而No.35、Ν〇·38見到一部分生銹。以上總括 ，確認急冷薄帶之評價結果與使用職鍍靶材而成膜之濺鍍 膜之評價爲相等之傾向。 -19-No. 41 has a high ratio of Fe, so corrosion resistance, especially corrosion resistance to NaCl, is insufficient. No. 42 (D) has a high content of elements and a low saturation magnetic flux density. On the other hand, in the present invention examples No. 1 to No. 32 satisfy the conditions of the present invention, it is found that the amorphousness, hardness, corrosion resistance, and saturation magnetic flux density are excellent. As described above, according to the present invention, it is possible to provide a soft magnetic alloy for perpendicular magnetic recording and a sputtered palladium material which are excellent in amorphousness, hardness, corrosion resistance and saturation magnetic flux density, and a magnetic recording medium using the same. [Manufacture of Sputtering Target] Next, a method of producing a sputtering target is shown. For No. 3, 14〇.11, >1〇.12, 1'4〇.13, 1'''1〇.24 and Table 2 of Table 1]^〇.35, 1^〇-38 The composition of the seven components shown is used to measure and melt the raw material, and inductively heat-melt in a refractory crucible in a reduced-argon atmosphere, and a hot liquid is discharged from a nozzle having a diameter of 8 mm in the lower portion of the crucible, and is atomized by Ar gas. The gas atomization -18 - 201239922 powder was used as a raw material, and was degassed into a tank made of SC having an outer diameter of 220 mm, an inner diameter of 210 mm, and a length of 200 mm. The degree of vacuum arrival at the time of degassing was set to 1.3 x 1 (T 2 Pa. The above-mentioned powder-filled steel slab was heated to 1,150 ° C, and placed in a restrained container having a diameter of 230 mm, and formed by press molding at 500 MPa. The solidified molded body is processed into a disc shape having a diameter of 180 mm and a thickness of 7 mm by wire cutting, rotary disk processing, and flat honing, and is used as a sputter-ply-plated material. [Manufacture of Sputtered Film] Compositions of the seven types of components are used. The sputter target is formed on the glass substrate to form a sputter film. The X-ray diffraction pattern 'No. 3, No.l 1, Νο.12, Νο.13, Ν〇·24 all see the halo map. The crystallization peak was observed in the same manner as in the 急ο·35 and No.38, and the corrosion resistance test (saline spray test) was carried out in the same manner as in the quenching and thinning. The results were Νο·3, No. ll, Νο·12, No. 13, No.24 did not rust, and No.35 and Ν〇·38 saw some rust. The above summary confirms that the evaluation result of the quenched ribbon is equal to the evaluation of the sputtering film formed by using the target plating target. Tendency. -19-