201237531 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種光波導，且特別是有關於一種光 學非線性晶體光波導及其製作方法。 【先前技術】 近年來由於工商發達、社會進步，相對提供之產品亦 主要針對便利、確實、經濟實惠為主旨，因此，當前開發 之產品亦比以往更加進步，而得以貢獻社會。 第1圖係依照先前技術繪示一種鈮酸鋰光波導結構示 意圖及其製造方法的流程圖。 如第1圖所示，其揭露一種具非線性光學頻率轉換效 應之鈮酸鋰光波導結構與其製造方法：包括在z_切鈮酸鋰 基板上製造具週期性極化反轉結構（periodically poled inverted domain structures)，與利用質子交換法（proton exchange)形成埋入式光波導。 當使用質子交換週期性極化銳酸裡(Periodically Poled Lithium Niobate，PPLN)波導作為非線性頻率轉換元件時， 為避免因強光作用下之光折變效應(photo-refractive effect) 導致非線性作用波間之相位失配，需將此元件置於高溫操 作，一般而言是不低於100°C。由於質子之質量輕與擴散 速率快，對高溫下之質子交換波導，則有長時操作下光波 導元件之穩定度疑慮。 第2圖係依照另一先前技術繪示一種鈮酸鋰光波導結 201237531 構示意圖及其製造方法的流程圖。 請參照第2圖，其揭露另一具非線性光學頻率轉換效 應之鈮酸鋰光波導結構與其製造方法：包括在具抗光折變 之Z-切攙鋅銳酸裡基板一上製造週期性極化反轉結構，隨 後利用晶圓結合技術將基板一黏著於具有較低光學折射係 數之鈕酸鋰基板二，並對此複合基板進行研磨拋光，使基 板一之厚度限縮至4微米。隨後利用活性離子蝕刻技術， 在前述複合基板上形成具脊狀結構之PPLN光波導。 此法以抗光折變之攙鋅ZnO:PPLN基板技術，克服以 質子交換法造成週期性極化銳酸裡（proton-exchanged Periodically Poled Lithium Niobate，PE:PPLN)光波導元件 於高溫作時性能之不穩定性；然此製造技術過程繁複，需 利用兩種不同基板來製造具抗光折變之非線性光波導元 件。 第3圖依照再一先前技術繪示一種鈮酸鋰光波導結構 示意圖及其製造方法的流程圖。 如第3圖所示，其揭露另一具非線性光學頻率轉換欵 應之鈮酸鋰光波導結構與其製造方法：包括在具抗光折變 之X-切攙鎂鈮酸鋰基板一上製造週期性極化反轉結構，隨 後利用晶圓結合技術將基板一黏著於具有較低光學折射係 數之鈮酸鋰基板二，並對此複合基板進行研磨拋光，使基 板一之厚度限縮至4微米。 隨後利用鑽石切割機切割出脊狀波導。此法以抗光折 變之攙鎂MgO:PPLN基板技術’克服以質子交換法造成 201237531 PE:PPLN光波導元件於高溫作時性能之不穩定性；然此製 造技術過程繁複，需利用兩種不同基板來製造具抗光折變 之非線性光波導元件。 由此可見，上述現有的方式，顯然仍存在不便與缺陷， 而有待加以進一步改進。為解決上述問題，相關領域莫不 費盡心思來謀求解決之道，但長久以來一直未見適用的方 式被發展完成。因此，如何能避免採用質子交換法來形成 埋入式光波導時，會導致在高溫長時間操作下影響光波導 元件之穩定度的問題，以及光波導元件之非線性係數會受 影響的問題，並降低製程的複雜度，實屬當前重要研發課 題之一，亦成爲當前相關領域亟需改進的目標。 【發明内容】 本發明内容之一目的是在提供一種光學非線性晶體光 波導及其製造方法，藉以改善採用質子交換法來形成埋入 式光波導時，會導致在高溫長時間操作下影響光波導元件 之穩定度的問題，以及光波導元件之非線性係數會受影響 的問題，並降低製程的複雜度。 為達上述目的，本發明内容之一技術樣態係關於一種 光學非線性晶體光波導。光學非線性晶體光波導包含複數 個一維或二維分佈之週期性或準週期性疇反轉結構以及埋 入式帶狀光波導結構。每一該些疇反轉結構係為一 Z-切或 Y-切光學非線性晶體。而非線性光學參量之頻率轉換過 程，係藉由埋入式帶狀光波導結構形成於該些疇反轉結構 201237531 中，或藉由該些反轉疇結構形成於埋入式帶狀光波導結構 中而產生。 根據本發明一實施例，光學非線性晶體係為鈮酸鋰或 组酸链。 根據本發明另一實施例，光學非線性晶體光波導係為 一光學單偏振態光波導，其中該光學單偏振態係平行於該 鈮酸鋰或鈕酸鋰之z軸方向。 根據本發明再一實施例，銳酸鋰或鈕酸鋰之疇反轉方 向係平行於該鈮酸鋰或钽酸鋰之Z軸或-Z軸方向。 根據本發明又一實施例，該些疇反轉結構包含複數個 區段。每一該些區段包含複數個準相位匹配結構。其中每 一該些區段中疇之間距與佔空比不為定值。 根據本發明另再一實施例，埋入式帶狀光波導結構進 行非線性光學參量產生時，入射光與該入射光之倍頻、差 頻或合頻光之行進方向係平行於該鈮酸鋰或钽酸鋰之X軸 方向。 根據本發明另又一實施例，z_切或Y-切铌酸經或钽酸 鋰係為摻雜辞之該鈮酸鋰或钽酸鋰、摻雜鎂之該鈮酸鋰或 鈕酸鋰或未摻雜之該鈮酸鋰或钽酸鋰。 根據本發明再另一實施例，埋入式帶狀光波導結構係 為該光學非線性晶體光波導之核心部分，而在該光學非線 性晶體光波導中該埋入式帶狀光波導結構以外的部分係為 披覆層，其中該核心部分係由高濃度摻雜鎵、鎂或鋅之鈮 酸鋰或钽酸鋰所組成，或者由摻雜其金屬氧化物如氧化 201237531 =/氧化鎂、氧化鋅之鈮酸鋰或钽酸鋰所組成，而該彼覆 係由低4度摻雜鎵鎖、鋅或未摻雜之銳酸裡或组酸裡 所組成’或者由摻雜其金屬氧化物如氧化鎵、氧化鎂、氧 化鋅之鈮酸鋰或鈕酸鋰所組成。 根據本發明再又一實施例，核心部分之鈮酸鋰或钽酸 链換雜鎵、鎂或鋅之濃度為1G16原子/cm3。 根據本發明又另一實施例’核心部分係將鎵、鎂、鋅 或其氧化物如氧化鎵、氧化鎂或氧化鋅在約5〇〇_1〇5〇〇c之 間的溫度中擴散至鈮酸鋰或钽酸鋰所形成。 為達上述目的，本發明内容之另一技術樣態係關於一 種非線性光學參量產生結構。非線性光學參量產生結構包 含複數個一維或二維分佈之週期性或準週期性疇反轉結構 以及脊狀光波導結構。每一該疇反轉結構係為一 z_切光學 非線性晶體。而此光學參量產生結構，係包含一脊狀光波 導結構位於該些疇反轉結構上。 根據本發明一實施例，光學非線性晶體係為鈮酸鋰或 钽酸鐘。 根據本發明另一實施例，光學非線性晶體光波導係為 一光學單偏振態光波導，其中該光學單偏振態係平行於該 銳酸鐘或组酸裡之Z軸方向。 根據本發明再一實施例，鈮酸鋰或鈕酸鋰之疇反轉方 向係平行於該鈮酸鋰或钽酸鋰之z軸或_2；軸方向。 根據本發明又一實施例，該些疇反轉結構包含複數個 區段。每一該些區段包含複數個準相位匹配結構。每一該 201237531 不為定值。 ，非線性光學參量產生結構進 入射光與該入射光之倍頻、差 行於该銳酸鐘或组酸鐘之X軸 些區段中疇之間距與佔空比 根據本發明另再實施例 行非線性光學參量產生時， 頻或合頻光之行進方向係平 方向。 根據本發明另又實施 為-梯形。 ，綠光波導結構之橫截面係 施例，非線性光學參量產生結構更 包一金屬電極〜至少二第二金屬電極。至少 一金屬電極分別配置於該略主夕一第 脊狀光波導結構之兩側上轉銳驗或12酸鐘相對於該 包含非線性光學參量產生結構更 -第-金屬電極以及至少=至!:第二金屬電極。至少 根據本發明又另-ϋ該光波導結構之兩側上。 產生結構之核心部分，而在該非二i 其中^ ♦狀光波導結構以外的部分係為披覆層， 5= 部分係由高漢度摻雜鎵、、鋅或其金屬氧化 物』氧化鎵、氧⑽、氧化鋅之㈣料域崎組成， 而及披覆層係由低濃度摻雜H辞或其金屬氧化物如 氧化鎵、氧化鎂、氧化鋅或未摻雜之鈮酸鋰或鈕酸鋰 成。 、’ 201237531 根據本發明又再一實施例，核心部分之鈮酸鋰或鈕酸 鋰摻雜鎵、鎂或辞之濃度為1016原子/cm3。 根據本發明又另一實施例，核心部分係將氧化鎵、氡 化鎂或氧化鋅在約5〇〇_1〇5(rc之間的溫度中擴散至鈮酸鋰 或钽酸鐘所形成。 一為達上述目的，本發明内容之再一技術樣態係關於一 種光學非祕晶體光波導之製作方法。光學非線性晶體光 ^導之製作方法包含以下步驟：對—鮮非線性晶體進行 奇反轉卩及對經_反轉之該光學非線性晶體進行埋入式 波導製’或對—光學非線性晶體進行埋人式波導製程， 、及對、、’！埋人式波導之光學非線性晶體進行噃反轉製程。 此外’埋入式波導製程包含以下步驟：對該脅反轉光 學非線性晶體進行光阻旋轉塗佈，以形成一第—光阻層； 《阻層進行曝光及顯影；以鎵或氧化鎵對該嘴反 Ί非㈣晶體進行濺鍵或以錄與鋅或其氧化物如氧化 鋅對料反轉光學雜性晶體進行騎錄多層金 成二筮二t之濺鍍以於該疇反轉光學非線性晶體上形 曰體㈣Μ物層或金屬層；對該嘴反轉光學非線性 'IT體光阻進行掀離法’以於該嘴反轉光學非線 ==:圖案化第一金屬層;以及在約5〇。筒 於1對㈣反轉光學非線性晶體進行擴散，以 f 學非線性晶體中形成-埋人式帶狀波導結 根據本發明一 實施例，光學非線性晶 體係為一週期性 201237531 疇反轉鈮酸鋰、一準週期性疇反轉鈮酸鋰、一週期性疇反 轉鈕酸鋰或一準週期性疇反轉钽酸鋰。 根據本發明另一實施例，在執行該埋入式波導製程步 驟之後，更包含以下步驟：於該疇反轉光學非線性晶體上 形成一脊狀結構。 此外，於該疇反轉光學非線性晶體上形成一脊狀結 構，包含以下步驟：對該疇反轉鈮酸鋰或鈕酸鋰進行光阻 旋轉塗佈，以形成一第二光阻層；對該第二光阻層進行曝 光及顯影；以鎵或氧化鎵對該疇反轉鈮酸鋰或鈕酸鋰進行 濺鍍，以於該疇反轉鈮酸鋰或钽酸鋰上形成一第二金屬 層；對該疇反轉鈮酸鋰或钽酸鋰上之該第二光阻進行掀離 法，以於該埋入式帶狀波導結構上形成一圖案化第二金屬 層；以及對該圖案化第二金屬層進行處理，以形成一脊狀 結構。 根據本發明再一實施例，對該圖案化第二金屬層進行 處理之步驟，包含以下步驟：對該疇反轉鈮酸鋰或鈕酸鋰 上該圖案化第二金屬層以外之區域，進行鋰離子及/或質子 之相互擴散與取代，以形成複數個鈮酸鋰反轉區；以及利 用氫氟酸腐蝕該圖案化第二金屬層以及該些鈮酸鋰反轉 區，以形成該脊狀結構。 根據本發明又一實施例，對該圖案化第二金屬層進行 處理之步驟，包含以下步驟：利用反應式離子蝕刻技術， 對該疇反轉鈮酸鋰或钽酸鋰上該圖案化第二金屬層以外之 區域進行處理，以形成該脊狀結構。 201237531 根據本發明另再一實施例，對該圖案化第二金屬層進 行處理之步驟，包含以下步驟：利用高能量輻射粒子對該 疇反轉鈮酸鋰或钽酸鋰上該圖案化第二金屬層以外之區域 進行照射；以及利用反應氣體與離子撞擊經高能量輻射粒 子照射之區域，以形成該脊狀結構。 根據本發明另又一實施例，對該圖案化第二金屬層進 行處理之步驟，包含以下步驟：利用高能量輻射粒子對該 疇反轉鈮酸鋰或鈕酸鋰上該圖案化第二金屬層以外之區域 進行照射；以及利用氫氟酸腐蝕經高能量輻射粒子照射之 區域，以形成該脊狀結構。 根據本發明再另一實施例，對該圖案化第二金屬層進 行處理之步驟，包含以下步驟：利用精密切割技術對該圖 案化第二金屬層之兩側進行銑削，以形成該脊狀結構。 根據本發明再又一實施例，在形成該脊狀結構的步驟 之後，更包含以下步驟：於該疇反轉光學非線性晶體與該 脊狀結構上形成複數個金屬電極。 此外，於該疇反轉光學非線性晶體與該脊狀結構上形 成複數個金屬電極，包含以下步驟：形成一介電緩衝層於 該脊狀結構上；形成至少一第一金屬電極於該介電緩衝層 上；以及於該疇反轉鈮酸鋰或鈕酸鋰相對於該脊狀結構之 兩側上分別形成至少一第二金屬電極。 根據本發明又另一實施例，在形成該脊狀結構的步驟 之後，更包含以下步驟：於該疇反轉光學非線性晶體與該 脊狀結構上形成複數個金屬電極。 12 201237531 此外，於該疇反轉光學非線性晶體與該脊狀結構上形 成複數個金屬電極，包含以下步驟：於該疇反轉鈮酸鋰或 钽酸鋰相對於該脊狀結構之兩側上分別形成至少一第一金 屬電極與至少一第二金屬電極。 因此，根據本發明之技術内容，本發明實施例藉由提 供一種光學非線性晶體光波導及其製造方法，藉以改善採 用質子交換法來形成埋入式光波導時，會導致在高溫長時 間操作下影響光波導元件之穩定度的問題，以及光波導元 件之非線性係數會受影響的問題，並降低製程的複雜度。 【實施方式】 為了使本揭示内容之敘述更加詳盡與完備，可參照所 附之圖式及以下所述各種實施例，圖式中相同之號碼代表 相同或相似之元件。但所提供之實施例並非用以限制本發 明所涵蓋的範圍，而結構運作之描述非用以限制其執行之 順序，任何由元件重新組合之結構，所產生具有均等功效 的裝置，皆為本發明所涵蓋的範圍。其中圖式僅以說明為 目的，並未依照原尺寸作圖。另一方面，眾所週知的元件 與步驟並未描述於實施例中，以避免對本發明造成不必要 的限制。 第4圖係依照本發明一實施例繪示一種光學非線性晶 體光波導400結構示意圖。第5圖係依照本發明一實施例 繪示一種光學非線性晶體光波導400的側視示意圖。 請一併參照第4圖與第5圖，光學非線性晶體光波導 13 201237531 400包含複數個一維或二維分佈之週期性或準週期性疇反 轉結構Cl〜Cn以及埋入式帶狀光波導結構410。 在此需先說明的是，光學非線性晶體光波導4〇〇之整 體結構係如第4圖所示’然為完整呈現本發明實施例之技 術特徵點而於第5圖巾例示性崎示前述些，反轉結構Cl 〜Cn之間的配置方式。 如第4圖所示，埋入式帶狀光波導結構41〇位於前述 些'^反轉結構Cl〜Cn中。埋人式帶狀光波導結構410是用 以進行非線性光學參量產生。此外，每—前述些_反轉結 構（：!〜(：„係為Z-切或Υ_切光學非線性晶體。 於製作上，光學非線性晶體4〇〇可為銳酸裡或鈕酸鋰。 〇〇在一實施例中，光學非線性晶體光波導400係為光學 單偏振態光波導，其巾光學單偏振態係平行於紐鐘或扭 酸鐘之Ζ轴方向。 第6圖係依照本發明一實施例繪示一種光學非線性晶 體光波導400之嘴反轉結構Ci的側視示意圖。 日日 —如第6圖所示’鳴反轉結構q包含複數個區段&〜 則述些區段Sl〜Sj序連接，且每—前述些區段s]〜\中於 之間距與佔空比不為定值。 可 第7圖係依照本發明一實施例繪示一種光學非線性曰 體光波導400中似轉結構Q之區段&的側視示意圖。曰曰 如第7圖所示’在每—前述些區段ϋ巾（例如區段 Si中）包含複數個準相位匹配結構QpMi〜QpMn，且在同一 區段Si中的前述些準相位匹配結構QpMi〜QpMn依序連 201237531 接0 頁他例中 7圖中Q·之正鎧二 酸鋰之疇反轉方向(例如第 於銳酸鐘或之嘴反轉方向）係平行 在另一實施例中，埋人， 線性光學參量產生時，入射^狀光波導結構410進行非 # 射先與该入射光之倍頻、差頻^ 合頻先之订進方向係平行 差頻或 於再一實施例中，z_切ΓΓ 之x轴方向。 雜鋅之繼或纽酸鍾、摻雜=銳酸鐘或组酸鐘可為摻 Z-切或Y-切鈮酸鐘或趣 此外， 鋰。 丌了為未摻雜之鈮酸鋰或鈒酸 在又實轭例中，埋入式帶狀光波導 學非線性晶體光波導之核心部分 2光 體光波導中埋入式帶妝本冰道从*叨在光予非線性晶 層。 1讀先波導結構以外的部分是為被覆 於製作時，核心部分可由高濃度推雜錄、鎮、辞 成，或者由摻雜其金屬氧化物如^ 鎵氧化鎮a化鋅之銳酸鐘絲酸鐘所組成，而披 可由低濃度摻騎、鎮、辞或未摻雜之㈣㈣㈣鐘5 組成，或者由摻雜其金屬氧化物如氧化鎵、氧化鎂、氧化 鋅之鈮酸鐘或麵酸鐘所組成，此外，披覆層亦可由未推雜匕 之鈮酸鋰或鈕酸鋰所組成。 詳細而言，核心部分之鈮酸鋰或鈕酸鋰摻雜鎵、鎂或 鋅之濃度可為約1〇16原子披覆層之銳酸鐘或 15 201237531 钽酸鋰摻雜鎵、鎂或鋅之濃度可為約1016原子/cm3以下。 於再一實施例中，核心部分係將氧化鎵、氧化鎂或氧 化辞在約500-1050°C之間的溫度中擴散至鈮酸鋰或鈕酸鋰 所形成。 第8A圖係依照本發明一實施例繪示一種非線性光學 參量產生結構800的示意圖。第8B圖係依照本發明一實施 例繪示一種非線性光學參量產生結構800的剖面圖。 請一併參照第5圖、第8A圖與第8B圖，非線性光學 參量產生結構800包含複數個一維或二維分佈之週期性或 準週期性疇反轉結構以及脊狀光波導結構810。 在此需先說明的是，非線性光學參量產生結構800之 整體結構係如第8Α圖所示，然為完整呈現本發明實施例 之技術特徵點而於第5圖中例示性地繪示前述些疇反轉結 構（^〜(：η之間的配置方式。 如第8Α圖所示，脊狀光波導結構810是形成於前述 些疇反轉結構上。此外，每一前述些疇反轉結構 (^〜(^係為Ζ-切或Υ-切光學非線性晶體。 於製作上，光學非線性晶體係為鈮酸鋰或鈕酸鋰。 在一實施例中，非線性光學參量產生結構800係為光 學單偏振態光波導，其中光學單偏振態係平行於鈮酸鋰或 鈕酸鋰之Ζ軸方向。 在此需先說明的是，第8Α圖中的非線性光學參量產 生結構800與第4圖中的光學非線性晶體光波導400相 比，除了多出脊狀光波導結構810之外，非線性光學參量 16 201237531 產生結構800與光學非線性晶體光波導400的其餘結構均 相同。 因此，第8A圖的結構亦可由第6圖與第7圖中所示 之結構來說明。非線性光學參量產生結構800可如第6圖 所示，其疇反轉結構Q包含複數個區段，前述些區 段S^Sn依序連接，且每一前述些區段ScS。中疇之間距與 佔空比不為定值。 此外，如第7圖所示，在每一前述些區段SfSn中（例 如區段Si中）包含複數個準相位匹配結構QPMi〜QPMn， 且在同一區段Si中的前述些準相位匹配結構QPlV^-QPMn 依序連接。 在一實施例中，鈮酸鋰或钽酸鋰之疇反轉方向（例如第 7圖中QPM!i正鐵電疇與負鐵電疇之疇反轉方向）係平行 於鈮酸鋰或钽酸鋰之Z軸或-Z軸方向。 在另一實施例中，非線性光學參量產生結構800進行 非線性光學參量產生時，入射光與該入射光之倍頻、差頻 或合頻光之行進方向係平行於鈮酸鋰或钽酸鋰之X軸方 向。 請參照第8B圖，其係繪示非線性光學參量產生結構 800的剖面圖。由第8B圖可知，脊狀光波導結構810之橫 截面是為梯形。 在一實施例中，非線性光學參量產生結構800更包含 至少一第一金屬電極830以及至少二第二金屬電極840。 至少一第一金屬電極830配置於脊狀光波導結構810之 17 201237531 上。至少二第二金屬電極840分別配置於疇反轉鈮酸鋰或 钽酸鋰相對於脊狀光波導結構840之兩側上。 在另一實施例中，非線性光學參量產生結構800更包 含介電緩衝層820。介電缓衝層820配置於脊狀光波導結 構810上。請參照第8A圖與第8B圖，至少一第一金屬電 極830可配置於介電緩衝層820上。 請參照第8B圖，脊狀光波導結構810之剖面可為梯 形，假設其上底為R1、下底為R2、上底與兩侧邊之爽角 各為01與<93以及下底與兩側邊之夾角各為02與<94, 則此梯形可滿足以下式子： 0 1+0 2=180°，0S Θ 2^90° ; 03+04=180°，0S 04$9〇〇 ;以及 Rl/R2g 1。 第9A圖係依照本發明另一實施例繪示一種非線性光 學參量產生結構900的示意圖。第9B圖係依照本發明一實 施例繪示一種非線性光學參量產生結構900的剖面圖。 在此需先說明的是，第9A圖中的非線性光學參量產 生結構900相較於第8A圖中的非線性光學參量產生結構 800，除了沒有位於脊狀光波導結構810上的介電緩衝層 820與至少一第一金屬電極830外，非線性光學參量產生 結構900與非線性光學參量產生結構800的其餘結構均相 同。為使本說明書簡潔，以下僅闡述非線性光學參量產生 結構900與非線性光學參量產生結構800不同之處。 請參照第9B圖，其係繪示非線性光學參量產生結構 18 201237531 900的剖面圖。由第9b圖可知，脊狀光波導結構910之橫 截面是為梯形。 在一實施例中，非線性光學參量產生結構900更包含 至少一第一金屬電極920以及至少一第二金屬電極930。 至少一第一金屬電極92〇以及至少一第二金屬電極930分 別配置於_反轉鈮酸鋰或钽酸鋰相對於脊狀光波導結構 910之兩側上。 請參照第9B圖，脊狀光波導結構910之剖面可為梯 形’假設其上底為R1、下底為R2、上底與兩侧邊之夾角 各為0 1與03以及下底與兩側邊之夾角各為02與Θ4， 則此梯形可滿足以下式子： 0 1+0 2=180。，0S 02^90° ; 0 3+0 4=180。，OS 0 4590° ;以及 R1/R2S 1。 在一實施例中，脊狀光波導結構910係為非線性光學 參量產生結構8〇〇或900之核心部分，而在非線性光學參 量產生結構800或900中脊狀光波導結構以外的部分係為 披覆層。 於製作時，非線性光學參量產生結構8〇〇或9〇〇之核 心部分係由高濃度摻雜鎵、鎂或鋅，或者由摻雜其金屬氧 化物如氧化鎵、氧化鎂、氧化鋅之鈮酸鋰或钽酸鋰所組成， 而非線性光學參量產生結構800或9〇〇之披覆層可由低濃 度摻雜鎵、或未摻雜之細㈣或㈣_所組成 者由摻雜其金屬氧化物如氧化鎵、氧傾、氧化辞之起酸 201237531 鋰或鈕酸鋰所組成，此外， 或钽酸鋰所組成。 復層亦可由未摻雜之鈮酸鋰 詳細而言，非線性光學參 心部分之銳酸鐘或纽酸鐘摻雜量產生結構咖或漏之核 ，原子W以上，而非線性光或鋅之濃度可為約 之披覆層之錕酸鐘或纽酸链予參量產生結構_或嚮 1〇丨6原子/cm3以下。 H鎮或鋅之濃度可為約 於再貫施例中，非線性光學來θ * & 々& 、 Αη υ〆 九千翏I產生結構800或900 之核心部分係將氧化鎵、t201237531 VI. Description of the Invention: [Technical Field] The present invention relates to an optical waveguide, and more particularly to an optical nonlinear crystal optical waveguide and a method of fabricating the same. [Prior Art] In recent years, due to the development of business and industry and the advancement of society, the products provided are mainly aimed at convenience, reliability, and economics. Therefore, the products currently being developed are more advanced than before and can contribute to society. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing the structure of a lithium niobate optical waveguide structure and a method of manufacturing the same according to the prior art. As shown in FIG. 1, a lithium niobate optical waveguide structure having a nonlinear optical frequency conversion effect and a manufacturing method thereof are disclosed, which include manufacturing a periodic polarization pole structure on a z_cut tantalum substrate. Inverted domain structures, and the formation of buried optical waveguides by proton exchange. When a proton exchanged periodic polarized polar acid (PPLN) waveguide is used as a nonlinear frequency conversion element, in order to avoid the photo-refractive effect caused by strong light, the nonlinear interaction wave is caused. The phase mismatch needs to be placed at high temperature operation, generally not lower than 100 °C. Since the mass of the proton is light and the diffusion rate is fast, the proton exchange waveguide at a high temperature has doubts about the stability of the optical waveguide element under long-term operation. 2 is a flow chart showing a schematic diagram of a lithium niobate optical waveguide junction 201237531 and a method of fabricating the same according to another prior art. Please refer to FIG. 2, which discloses another lithium niobate optical waveguide structure with nonlinear optical frequency conversion effect and a manufacturing method thereof, which comprises manufacturing a periodic pole on a substrate with Z-cutting zinc sulphur acid resistant to photorefractive deformation. The structure is reversed, and then the substrate is adhered to the lithium nicotinate substrate 2 having a lower optical refractive index by wafer bonding technology, and the composite substrate is polished and polished to reduce the thickness of the substrate to 4 μm. A PPLN optical waveguide having a ridge structure is then formed on the composite substrate by a reactive ion etching technique. This method overcomes the performance of proton-exchanged Periodically Poled Lithium Niobate (PE:PPLN) optical waveguide components at high temperatures by the anti-photorefractive bismuth zinc ZnO:PPLN substrate technology. Unstable; however, the manufacturing process is complicated, and two different substrates are required to manufacture a nonlinear optical waveguide component with photo-refractive resistance. Fig. 3 is a flow chart showing a schematic diagram of a lithium niobate optical waveguide structure and a method of manufacturing the same according to still another prior art. As shown in FIG. 3, it discloses another non-linear optical frequency conversion 铌 铌 lithium niobate optical waveguide structure and a manufacturing method thereof: including a manufacturing cycle on a X-cut tantalum magnesium niobate substrate with photorefractive resistance The polarization inversion structure is then adhered to the lithium niobate substrate 2 having a lower optical refractive index by wafer bonding technology, and the composite substrate is ground and polished to reduce the thickness of the substrate to 4 μm. . The ridge waveguide is then cut using a diamond cutter. This method overcomes the instability of the 201237531 PE:PPLN optical waveguide component at high temperature by the proton-exchanged magnesium-MgO:PPLN substrate technology. However, the manufacturing process is complicated and requires two different A substrate is used to fabricate a nonlinear optical waveguide component that is resistant to photorefractive. It can be seen that the above existing methods obviously still have inconveniences and defects, and need to be further improved. In order to solve the above problems, the relevant fields have not tried their best to find a solution, but the method that has not been applied for a long time has been developed. Therefore, how to avoid the problem that the proton exchange method is used to form the buried optical waveguide causes the stability of the optical waveguide component under high temperature operation for a long time, and the nonlinear coefficient of the optical waveguide component is affected. And reducing the complexity of the process is one of the current important research and development topics, and it has become an urgent target for improvement in related fields. SUMMARY OF THE INVENTION An object of the present invention is to provide an optical nonlinear crystal optical waveguide and a manufacturing method thereof, thereby improving the use of a proton exchange method to form a buried optical waveguide, which may cause light to be affected under high temperature and long-term operation. The problem of stability of the waveguide component, as well as the nonlinearity of the optical waveguide component, can be affected and the complexity of the process can be reduced. To achieve the above object, one aspect of the present invention relates to an optical nonlinear crystal optical waveguide. The optical nonlinear crystal optical waveguide includes a plurality of one- or two-dimensional distributed periodic or quasi-periodic domain inversion structures and a buried strip optical waveguide structure. Each of the domain inversion structures is a Z-cut or Y-cut optical nonlinear crystal. The frequency conversion process of the nonlinear optical parameters is formed in the domain inversion structures 201237531 by a buried strip optical waveguide structure, or formed in the buried strip optical waveguide by the inverted domain structures. Produced in the structure. According to an embodiment of the invention, the optical nonlinear crystal system is lithium niobate or a acid acid chain. In accordance with another embodiment of the present invention, the optical nonlinear crystal optical waveguide is an optical single polarization optical waveguide, wherein the optical single polarization state is parallel to the z-axis direction of the lithium niobate or lithium nitrite. According to still another embodiment of the present invention, the domain reversal direction of lithium niobate or lithium niobate is parallel to the Z-axis or -Z-axis direction of the lithium niobate or lithium niobate. According to a further embodiment of the invention, the domain inversion structures comprise a plurality of segments. Each of the segments includes a plurality of quasi-phase matching structures. The distance between the domains and the duty ratio in each of the segments are not constant. According to still another embodiment of the present invention, when the buried strip-shaped optical waveguide structure is subjected to nonlinear optical parametric generation, the traveling direction of the incident light and the incident light, the difference frequency or the combined frequency light is parallel to the tannic acid. The X-axis direction of lithium or lithium niobate. According to still another embodiment of the present invention, the z_cut or Y-cut tannic acid or lithium niobate is the lithium niobate or lithium niobate doped with lithium, the lithium niobate or the lithium niobate doped with magnesium Or the lithium niobate or lithium niobate which is not doped. According to still another embodiment of the present invention, the buried strip optical waveguide structure is a core portion of the optical nonlinear crystal optical waveguide, and the embedded nonlinear optical waveguide structure is outside the buried nonlinear optical waveguide structure. The part is a coating layer, wherein the core part is composed of lithium niobate or lithium niobate doped with gallium, magnesium or zinc at a high concentration, or is doped with a metal oxide such as oxidation 201237531 = / magnesium oxide, Zinc oxide consisting of lithium niobate or lithium niobate, which is composed of a low-degree-doped gallium-locked, zinc or undoped sharp acid or a group of acids' or is oxidized by doping the metal The composition is composed of gallium oxide, magnesium oxide, zinc oxide, lithium niobate or lithium nitrite. According to still another embodiment of the present invention, the lithium niobate or tannic acid chain of the core portion has a concentration of gallium, magnesium or zinc of 1 G16 atoms/cm3. According to still another embodiment of the present invention, the core portion diffuses gallium, magnesium, zinc or an oxide thereof such as gallium oxide, magnesium oxide or zinc oxide at a temperature between about 5 〇〇 1 〇 5 〇〇 c to Lithium niobate or lithium niobate is formed. In order to achieve the above object, another aspect of the present invention relates to a nonlinear optical parametric generating structure. The nonlinear optical parametric generating structure comprises a plurality of periodic or quasi-periodic domain inversion structures of one or two dimensions and a ridged optical waveguide structure. Each of the domain inversion structures is a z-cut optical nonlinear crystal. The optical parametric generating structure comprises a ridge-shaped optical waveguide structure on the domain inversion structures. According to an embodiment of the invention, the optical nonlinear crystal system is lithium niobate or a niobium acid clock. In accordance with another embodiment of the present invention, the optical nonlinear crystal optical waveguide is an optical single polarization optical waveguide, wherein the optical single polarization state is parallel to the Z-axis direction of the sharp acid or group acid. According to still another embodiment of the present invention, the domain reversal direction of lithium niobate or lithium nitrite is parallel to the z-axis or _2; axial direction of the lithium niobate or lithium niobate. According to a further embodiment of the invention, the domain inversion structures comprise a plurality of segments. Each of the segments includes a plurality of quasi-phase matching structures. Each of these 201237531 is not fixed. The nonlinear optical parametric generating structure enters the illuminating frequency and the frequency doubling of the incident light, and the difference between the domain spacing and the duty ratio of the X-axis of the sharp acid clock or the group acid clock is further nonlinear according to the present invention. When the optical parameters are generated, the traveling direction of the frequency or combined frequency light is flat. According to the invention, it is further embodied as a trapezoid. The cross section of the green optical waveguide structure is an embodiment, and the nonlinear optical parametric generating structure further comprises a metal electrode - at least two second metal electrodes. The at least one metal electrode is respectively disposed on both sides of the slightly ridge-shaped optical waveguide structure, or the 12-acid clock is opposite to the nonlinear optical parameter generating structure--the metal electrode and at least = to! : a second metal electrode. At least on both sides of the optical waveguide structure in accordance with the present invention. Generating a core portion of the structure, and the portion other than the non-di- y optical waveguide structure is a cladding layer, and the portion 5 is partially doped with gallium, zinc, or a metal oxide thereof, gallium oxide, Oxygen (10), zinc oxide (4) composition of the domain, and the coating layer is doped with a low concentration of H or its metal oxide such as gallium oxide, magnesium oxide, zinc oxide or undoped lithium niobate or kinetic acid Lithium into. According to still another embodiment of the present invention, the core portion of lithium niobate or lithium nitrite is doped with gallium or magnesium at a concentration of 1016 atoms/cm3. According to still another embodiment of the present invention, the core portion is formed by diffusing gallium oxide, magnesium telluride or zinc oxide to a lithium niobate or tantalum clock at a temperature between about 5 〇〇 1 〇 5 (rc). In order to achieve the above object, a further technical aspect of the present invention relates to a method for fabricating an optical non-secret crystal optical waveguide. The optical nonlinear crystal optical waveguide manufacturing method comprises the following steps: performing an odd-symmetric nonlinear crystal Inverted 卩 and buried optical waveguides for the optical nonlinear crystals that are inverted/inverted or optically nonlinear crystals are buried in the waveguide process, and the opticals of the '! buried-waveguide' The linear crystal is subjected to a germanium inversion process. Further, the 'buried waveguide process includes the following steps: performing photoresist spin coating on the threat reverse optical nonlinear crystal to form a first photoresist layer; Development; gallium or gallium oxide is used to smash the non-(iv) crystal of the nozzle or to record the multi-layered gold into two-dimensional sputtering with zinc or its oxide such as zinc oxide. Inversion of the domain a scorpion (4) sputum layer or a metal layer on the crystal; a reverse nonlinear optical 'IT body photoresist is detached from the nozzle' to reverse the optical nonlinear line of the nozzle ==: patterning the first metal layer; And at about 5 〇. The tube is diffused in a pair of (4) inverted optical nonlinear crystals to form a buried-banded waveguide junction in a f-linear crystal. According to an embodiment of the invention, the optical nonlinear crystal system is Periodic 201237531 domain inversion lithium niobate, a quasi-periodic domain reversal lithium niobate, a periodic domain reversal lithium acid or a quasi-periodic domain reversal lithium niobate. According to another embodiment of the invention, After performing the buried waveguide process step, the method further includes the steps of: forming a ridge structure on the domain inversion optical nonlinear crystal. Further, forming a ridge structure on the domain inversion optical nonlinear crystal, The method comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium nitrite to form a second photoresist layer; exposing and developing the second photoresist layer; using gallium or gallium oxide pairs The domain reverses lithium niobate or lithium nitrite for sputtering to the domain Forming a second metal layer on the reversed lithium niobate or lithium niobate; performing the stripping method on the second photoresist on the domain reversed lithium niobate or lithium niobate for the buried strip waveguide Structurally forming a patterned second metal layer; and processing the patterned second metal layer to form a ridge structure. According to still another embodiment of the present invention, the step of processing the patterned second metal layer And comprising the steps of: interpolating and substituting lithium ions and/or protons in a region other than the patterned second metal layer on the lithium niobate or lithium nitrite on the domain to form a plurality of lithium niobate counters a transposed region; and etching the patterned second metal layer and the lithium niobate reversal regions with hydrofluoric acid to form the ridge structure. According to still another embodiment of the present invention, the patterned second metal layer is performed The step of treating comprises the step of treating the domain other than the patterned second metal layer on the domain reversed lithium niobate or lithium niobate by a reactive ion etching technique to form the ridge structure. 201237531 According to still another embodiment of the present invention, the step of treating the patterned second metal layer comprises the steps of: inverting the domain by using high energy radiation particles to reverse the lithium niobate or lithium niobate to the second pattern Irradiation is performed on a region other than the metal layer; and a region where the high-energy radiation particles are irradiated with the reaction gas and ions is used to form the ridge structure. According to still another embodiment of the present invention, the step of treating the patterned second metal layer comprises the steps of: inverting the domain by using high energy radiation particles to reverse the lithium niobate or the lithium carbonate; Irradiation is performed on a region other than the layer; and a region irradiated with the high-energy radiation particles is etched using hydrofluoric acid to form the ridge structure. According to still another embodiment of the present invention, the step of processing the patterned second metal layer comprises the steps of: milling the two sides of the patterned second metal layer by a precision cutting technique to form the ridge structure . According to still another embodiment of the present invention, after the step of forming the ridge structure, the method further comprises the step of forming a plurality of metal electrodes on the domain inversion optical nonlinear crystal and the ridge structure. In addition, forming a plurality of metal electrodes on the domain inversion optical nonlinear crystal and the ridge structure comprises the steps of: forming a dielectric buffer layer on the ridge structure; forming at least one first metal electrode on the ridge And forming, on the electrical buffer layer, at least one second metal electrode on each side of the ridge structure with respect to the domain reversed lithium niobate or lithium nitrite. According to still another embodiment of the present invention, after the step of forming the ridge structure, the method further comprises the step of forming a plurality of metal electrodes on the domain inversion optical nonlinear crystal and the ridge structure. 12 201237531 further, forming a plurality of metal electrodes on the domain inversion optical nonlinear crystal and the ridge structure, comprising the steps of: inverting lithium niobate or lithium niobate relative to the sides of the ridge structure At least one first metal electrode and at least one second metal electrode are respectively formed on the upper surface. Therefore, according to the technical content of the present invention, an embodiment of the present invention provides an optical nonlinear crystal optical waveguide and a manufacturing method thereof, thereby improving the long-term operation at a high temperature by using a proton exchange method to form a buried optical waveguide. The problem of affecting the stability of the optical waveguide component, as well as the nonlinear coefficient of the optical waveguide component, is affected, and the complexity of the process is reduced. [Embodiment] In order to make the description of the present disclosure more complete and complete, reference is made to the accompanying drawings and the embodiments described below. However, the embodiments provided are not intended to limit the scope of the invention, and the description of the operation of the structure is not intended to limit the order of its execution, and any device that is recombined by the components produces equal devices. The scope covered by the invention. The drawings are for illustrative purposes only and are not mapped to the original dimensions. On the other hand, well-known elements and steps are not described in the embodiments to avoid unnecessarily limiting the invention. FIG. 4 is a schematic structural view of an optical nonlinear crystal optical waveguide 400 according to an embodiment of the invention. Figure 5 is a side elevational view of an optical nonlinear crystal optical waveguide 400 in accordance with one embodiment of the present invention. Referring to FIG. 4 and FIG. 5 together, the optical nonlinear crystal optical waveguide 13 201237531 400 includes a plurality of periodic or quasi-periodic domain inversion structures Cl~Cn and buried bands in one or two dimensions. Optical waveguide structure 410. It should be noted that the overall structure of the optical nonlinear crystal optical waveguide 4 is as shown in FIG. 4, which is a schematic representation of the technical features of the embodiment of the present invention. In the foregoing, the arrangement between the inversion structures C1 to Cn is reversed. As shown in Fig. 4, the buried strip-shaped optical waveguide structure 41 is located in the above-mentioned "inverted structures C1 to Cn". The buried strap optical waveguide structure 410 is used for nonlinear optical parametric generation. In addition, each of the above-mentioned _ inversion structures (:!~(:„ is a Z-cut or Υ-cut optical nonlinear crystal. In production, the optical nonlinear crystal 4〇〇 can be a sharp acid or a button acid Lithium. In one embodiment, the optical nonlinear crystal optical waveguide 400 is an optical single-polarization optical waveguide whose optical single polarization state is parallel to the x-axis of the Newton or the torsion clock. A side view of a nozzle inversion structure Ci of an optical nonlinear crystal optical waveguide 400 is shown in accordance with an embodiment of the present invention. As shown in FIG. 6 , the 'sound inversion structure q includes a plurality of segments & Then, the segments S1 to Sj are sequentially connected, and each of the foregoing segments s]~\ is not fixed in the interval and the duty ratio. Figure 7 is a diagram showing an optical according to an embodiment of the invention. A side view of a section & of a like-like structure Q in a nonlinear steroid light waveguide 400. As shown in Fig. 7, 'in each of the aforementioned section wipes (e.g., in section Si) comprises a plurality of Quasi-phase matching structures QpMi~QpMn, and the aforementioned quasi-phase matching structures QpMi~QpMn in the same section Si are sequentially connected 201 237531 至0页 In his example, the reverse direction of the domain of Q. bismuth diphosphate is reversed (for example, in the direction of the sharp acid clock or the mouth reverse direction) is parallel in another embodiment, buried, linear When the optical parameter is generated, the incident optical waveguide structure 410 performs a parallel frequency difference between the first frequency and the frequency of the incident light, and the difference frequency of the first frequency, or in another embodiment, z_cut x The x-axis direction. The zinc or the neo acid clock, doping = sharp acid clock or group acid clock can be Z-cut or Y-cut bismuth clock or interesting, lithium. Lithium niobate or tannic acid in a solid yoke example, the core portion of the buried strip-shaped optical waveguide nonlinear crystal optical waveguide 2 is embedded in the optical waveguide of the light-guided optical path from *叨在光予Non-linear crystal layer. 1 The part other than the first waveguide structure is used for coating. The core part can be scribed by high concentration, town, refraction, or doped with metal oxide such as gallium oxide. It consists of a sharp acid clock, which can be composed of (4) (four) (four) clocks 5, which are mixed with low concentration, race, or undoped, or doped with metal. The compound is composed of a gallium oxide film of gallium oxide, magnesium oxide or zinc oxide or a face acid clock. In addition, the coating layer may be composed of lithium niobate or lithium nitrite which is not impregnated with ruthenium. In detail, the core portion Lithium niobate or lithium nitrite-doped gallium, magnesium or zinc may be a sharp acid clock of about 1 〇 16 atomic coating or 15 201237531 lithium niobate doped gallium, magnesium or zinc may have a concentration of about 1016 atoms /cm3 or less. In still another embodiment, the core portion is formed by diffusing gallium oxide, magnesium oxide or oxidized words to a lithium niobate or lithium nitrite at a temperature between about 500 and 1050 ° C. Figure 8A A schematic diagram of a nonlinear optical parametric generating structure 800 is illustrated in accordance with an embodiment of the invention. 8B is a cross-sectional view of a nonlinear optical parametric generating structure 800 in accordance with an embodiment of the present invention. Referring to FIG. 5, FIG. 8A and FIG. 8B together, the nonlinear optical parametric generating structure 800 includes a plurality of one- or two-dimensionally distributed periodic or quasi-periodic domain inversion structures and a ridged optical waveguide structure 810. . It should be noted that the overall structure of the nonlinear optical parametric generating structure 800 is as shown in FIG. 8 , but the technical features of the embodiment of the present invention are fully presented, and the foregoing is exemplarily illustrated in FIG. 5 . Some domain inversion structures (^~(: arrangement between η. As shown in Fig. 8), the ridge-shaped optical waveguide structure 810 is formed on the aforementioned domain inversion structures. Further, each of the aforementioned domain inversions The structure (^~(^) is a Ζ-cut or Υ-cut optical nonlinear crystal. In fabrication, the optical nonlinear crystal system is lithium niobate or lithium nitrite. In one embodiment, the nonlinear optical parametric generating structure The 800 series is an optical single-polarization optical waveguide, wherein the optical single polarization state is parallel to the x-axis direction of lithium niobate or lithium nitrite. It should be noted here that the nonlinear optical parametric generating structure 800 in FIG. Compared to the optical nonlinear crystal optical waveguide 400 of FIG. 4, the nonlinear optical parametric 16 201237531 generating structure 800 is identical to the rest of the optical nonlinear crystal optical waveguide 400 except for the extra ridged optical waveguide structure 810. Therefore, the structure of Figure 8A is also The structure shown in FIGS. 6 and 7 can be explained. The nonlinear optical parametric generating structure 800 can be as shown in FIG. 6, and the domain inversion structure Q includes a plurality of segments, and the aforementioned segments S^Sn Connected sequentially, and each of the aforementioned segments ScS. The intermediate distance between the domains and the duty ratio is not constant. Further, as shown in Fig. 7, in each of the aforementioned segments SfSn (for example, in the segment Si) A plurality of quasi-phase matching structures QPMi~QPMn are included, and the quasi-phase matching structures QP1V^-QPMn in the same segment Si are sequentially connected. In an embodiment, the domain of lithium niobate or lithium niobate is reversed. The direction of rotation (for example, the domain inversion direction of the QPM!i positive ferroelectric domain and the negative ferroelectric domain in Fig. 7) is parallel to the Z-axis or -Z-axis direction of lithium niobate or lithium niobate. In another embodiment In the nonlinear optical parametric generating structure 800, when the nonlinear optical parametric is generated, the traveling direction of the incident light and the incident light, the difference frequency or the combined frequency light is parallel to the X-axis direction of the lithium niobate or lithium niobate. Please refer to FIG. 8B, which is a cross-sectional view showing the nonlinear optical parametric generating structure 800. As can be seen from FIG. 8B, The cross section of the optical waveguide structure 810 is trapezoidal. In an embodiment, the nonlinear optical parametric generating structure 800 further includes at least one first metal electrode 830 and at least two second metal electrodes 840. The at least one first metal electrode 830 The second metal electrodes 840 are disposed on the sides of the ridge-shaped optical waveguide structure 810, respectively. In an example, the nonlinear optical parametric generating structure 800 further includes a dielectric buffer layer 820. The dielectric buffer layer 820 is disposed on the ridge optical waveguide structure 810. Referring to FIGS. 8A and 8B, at least one first metal electrode 830 can be disposed on dielectric buffer layer 820. Referring to FIG. 8B, the cross section of the ridge optical waveguide structure 810 can be trapezoidal, assuming that the upper bottom is R1, the lower bottom is R2, the upper bottom and the two sides are refreshed at 01 and <93, and the bottom and bottom are The angle between the two sides is 02 and <94, then the trapezoid can satisfy the following formula: 0 1+0 2=180°, 0S Θ 2^90° ; 03+04=180°, 0S 04$9〇〇 ; and Rl/R2g 1. Figure 9A is a schematic illustration of a nonlinear optical parametric generating structure 900 in accordance with another embodiment of the present invention. Figure 9B is a cross-sectional view showing a nonlinear optical parametric generating structure 900 in accordance with an embodiment of the present invention. It should be noted here that the nonlinear optical parametric generating structure 900 in FIG. 9A is compared to the nonlinear optical parametric generating structure 800 in FIG. 8A except that there is no dielectric buffer on the ridge optical waveguide structure 810. Outside of layer 820 and at least one first metal electrode 830, nonlinear optical parametric generating structure 900 is identical to the rest of the nonlinear optical parametric generating structure 800. In order to clarify the description, only the nonlinear optical parametric generating structure 900 is different from the nonlinear optical parametric generating structure 800. Please refer to FIG. 9B, which is a cross-sectional view showing a nonlinear optical parametric generating structure 18 201237531 900. As can be seen from Fig. 9b, the transverse cross section of the ridge optical waveguide structure 910 is trapezoidal. In an embodiment, the nonlinear optical parametric generating structure 900 further includes at least one first metal electrode 920 and at least one second metal electrode 930. The at least one first metal electrode 92 〇 and the at least one second metal electrode 930 are respectively disposed on the opposite sides of the _ reversed lithium niobate or lithium niobate relative to the ridged optical waveguide structure 910. Referring to FIG. 9B, the cross section of the ridge optical waveguide structure 910 can be trapezoidal. Suppose the upper bottom is R1, the lower bottom is R2, the upper bottom and the two sides are at an angle of 0 1 and 03, and the bottom and sides are The angle between the sides is 02 and Θ4, then the trapezoid can satisfy the following formula: 0 1+0 2=180. , 0S 02^90° ; 0 3+0 4=180. , OS 0 4590° ; and R1/R2S 1. In one embodiment, the ridged optical waveguide structure 910 is a core portion of the nonlinear optical parametric generating structure 8 or 900, and the portion other than the ridged optical waveguide structure in the nonlinear optical parametric generating structure 800 or 900 For the cover layer. At the time of fabrication, the core portion of the nonlinear optical parametric generating structure 8〇〇 or 9〇〇 is doped with gallium, magnesium or zinc at a high concentration, or is doped with a metal oxide such as gallium oxide, magnesium oxide or zinc oxide. Lithium niobate or lithium niobate, and the nonlinear optical parametric-generating structure 800 or 9 Å may be doped by a low concentration doped gallium or an undoped fine (4) or (4) _ Metal oxides such as gallium oxide, oxygen, and oxidized acid 201237531 lithium or lithium nitrite, in addition, or lithium niobate. The complex layer may also be composed of undoped lithium niobate in detail, the nonlinear optical reference portion of the sharp acid clock or the neodymium clock doping amount to generate a structure coffee or a leaky core, the atomic W or more, and the nonlinear light or zinc The concentration may be about decanoic acid or a retinoic acid chain of the coating layer to form a structure _ or to be less than 1 〇丨 6 atoms/cm 3 . The concentration of H- or zinc may be about re-applied, nonlinear optics to θ * & 々 & Α υ〆 九 九 υ〆 产生 产生 产生 产生 产生 产生 800 800 800 800 800 800 800 800 800 800 800 800
氧化鎂或氧化鋅在約500-105CTC 之間的溫度中擴散至或组酸鐘所形成。 第10圖係依照本發明一實施例緣示一種光學非線性 曰曰體光波導之製作方法的流程圖。 、如第1G圖所示’光學非線性晶體光波導之製作方法包 3 乂下；/驟.對光學非線性晶體進行_反轉以及埋入式波 導製程(步驟1_);於嘴反轉光學非線性晶體上形成脊狀 結構(步驟1_);錢於軌轉絲非線性晶體與脊狀結 構上形成複數個金屬電極（步驟 1030) ° 在此需先說明的是’在步驟1〇1〇中對光學非線性晶體 進行嘴反轉以及埋人式波導製㈣步驟，可依照需求而先 行對光學非線性晶體進行嘴反轉，之後再對光學非線性晶 體進仃埋人式波導製程，亦可先行對光學非線性晶體進行 里入式波導製私再對其進行_反轉。以下僅說明其中一實 施態樣，難並相以限定本發明，任何熟習此技藝者， 在不脫離本發明之精神和範圍内，當可依照實際需求而調 20 201237531 整製程順序。 在步驟1G1G中，請-併參照第丨丨圖，其係依照本發 明一實施例繪示一種對光學非線性晶體進行疇反轉之製作 流程圖。對於z-切鈮酸鋰基板（其法線方向指向晶體之z 轴），極化反轉所施加之週期或準週期結構之金屬電極與接 地電極，各自鋪设於基板之+Z或z面而不在同一平面；如 此，在高於矯頑場(coercive field)之電力線作用下使得反 轉疇(inverted domain)指向晶體之+2或_2方向，亦即垂直 於基板面。 此外，對於Y-切鈮酸鋰基板（其法線方向指向晶體之γ 軸），週期或準週期結構之金屬電極與接地電極，皆鋪設於 基板之同一平面上；如此’在高於矯碩場之電力線作用下， 使得反轉疇(inverted domain)指向晶體之+2或_2方向，亦 即形成位置低於基板表面而與基板面平行。 再者，凊一併參照第12圖與第13圖，其係依照本發 明一實施例繪示一種對經疇反轉之光學非線性晶體進行埋 入式波導肋之製錢_。首先_光阻定祕狀波導 之開區域，並利用濺鍍技術，對樣品施加鎵或氧化鎵 (Ga203)或鎳鋅鎳(Ni/Zn/Ni)多層金屬之藏鑛。 隨後，將樣品置於高溫爐中’於5〇〇_i〇5〇°C之溫度間， 進行多段溫度之退火與擴散程序，形成埋入式波導於PPLN 基板之表層底下1〜4微米處。對於z_切鈮酸鋰基板（其法線 方向指向晶體之Z轴）之P P L N結構，此埋入式波導之光學 偏振模態是朝向晶體之z軸。 21 201237531 此外’對於Y-切鈮酸鋰基板（其法線方向指向晶體之γ 軸)之PPLN結構，此埋入式波導之光學偏振模態是朝向晶 體之Ζ轴。在擴散過程結束後，以酸或鹼性腐蝕液，清除 於樣品表面之殘餘金屬樣化物。 如第14圖所示，其係依照本發明一實施例繪示一種埋 入式波導製程的流程圖。 根據本發明之原理與精神，埋入式波導製程包含以下 步驟：對_反轉光學非線性晶體進行光阻旋轉塗佈，以形 成第一光阻層（步驟1410);對第一光阻層進行曝光及顯影 (步驟1420);以鎵或氧化鎵對疇反轉光學非線性晶體進行 濺鍍或以鎳與辞對疇反轉光學非線性晶體進行鎳鋅鎳多層 金屬之濺鑛，以於疇反轉光學非線性晶體上形成第一金^ 層（步驟1430);對疇反轉光學非線性晶體上之第一光阻進 行掀離法，以於疇反轉光學非線性晶體上形成圖案化第一 金屬層（步驟1440);以及在約5〇〇_1〇5〇°c之間的溫度中， 對嗨反轉料非線性晶體進行缝，以於，反轉光學非 性晶體中形成埋入式帶狀波導結構（步驟145〇)。 在一實施例中，光學非線性晶體 酸鋰、準週期性疇反轉鈮酸鋰、週期 週期性疇反轉鈕酸鋰。 晶體係為週期性疇反轉銳 週期性疇反轉鈕酸鋰或準Magnesium oxide or zinc oxide is formed by diffusion to a group acid clock at a temperature between about 500 and 105 CTC. Figure 10 is a flow chart showing a method of fabricating an optical nonlinear pupil optical waveguide in accordance with an embodiment of the present invention. As shown in Fig. 1G, the method of fabricating an optical nonlinear crystal optical waveguide includes: 乂 ; / 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对A ridge structure is formed on the nonlinear crystal (step 1_); a plurality of metal electrodes are formed on the nonlinear crystal and the ridge structure of the rail-turning wire (step 1030). The first explanation is as follows: 'In step 1〇1〇 In the optical nonlinear crystal, the nozzle reversal and the buried waveguide system (4) steps can be used to reverse the optical nonlinear crystal according to the requirements, and then the optical nonlinear crystal is embedded in the human waveguide process. The optical nonlinear crystal can be first etched and then inverted. In the following, only one of the embodiments is described, and it is difficult to define the present invention. Any one skilled in the art can adjust the process sequence according to actual needs without departing from the spirit and scope of the present invention. In step 1G1G, please refer to the following figure, which is a flow chart for fabricating domain inversion of an optical nonlinear crystal according to an embodiment of the invention. For a z-cut tantalate substrate (whose normal direction is directed to the z-axis of the crystal), the metal electrode and the ground electrode of the periodic or quasi-periodic structure applied by polarization inversion are respectively placed on the +Z or z plane of the substrate Instead of being in the same plane; thus, the inverted domain is directed in the +2 or _2 direction of the crystal, ie perpendicular to the substrate surface, under the action of a power line above the coercive field. In addition, for the Y-cut lithium niobate substrate (the normal direction of which is directed to the γ axis of the crystal), the metal electrode and the ground electrode of the periodic or quasi-periodic structure are laid on the same plane of the substrate; Under the action of the power line of the field, the inverted domain is directed to the +2 or _2 direction of the crystal, that is, the formation position is lower than the surface of the substrate and parallel to the substrate surface. Furthermore, referring to FIG. 12 and FIG. 13 together, in accordance with an embodiment of the present invention, a method of making a buried waveguide rib for a domain-inverted optical nonlinear crystal is illustrated. First, _ photoresist is used to define the open area of the secret waveguide, and a gallium or gallium oxide (Ga203) or nickel-zinc-nickel (Ni/Zn/Ni) multi-layer metal deposit is applied to the sample by sputtering. Subsequently, the sample is placed in a high temperature furnace at a temperature of 5 〇〇 〇 〇 〇 〇 ° C, and a multi-stage annealing and diffusion process is performed to form a buried waveguide 1 to 4 μm under the surface of the PPLN substrate. . For the P P L N structure of the z_lithium tantalate substrate whose normal direction is directed to the Z axis of the crystal, the optical polarization mode of the buried waveguide is toward the z-axis of the crystal. 21 201237531 In addition, for the PPLN structure of the Y-cut tantalum substrate (the normal direction of which is directed to the gamma axis of the crystal), the optical polarization mode of the buried waveguide is toward the x-axis of the crystal. At the end of the diffusion process, the residual metalloids on the surface of the sample are removed with an acid or alkaline etching solution. As shown in Fig. 14, a flow chart of a buried waveguide process is shown in accordance with an embodiment of the invention. In accordance with the principles and spirit of the present invention, a buried waveguide process includes the steps of: photoresist-rotating coating a _inverted optical nonlinear crystal to form a first photoresist layer (step 1410); and a first photoresist layer Performing exposure and development (step 1420); sputtering the domain inversion optical nonlinear crystal with gallium or gallium oxide or sputtering nickel-zinc-nickel multi-layer metal with nickel and the reverse domain optical nonlinear crystal Forming a first gold layer on the domain inversion optical nonlinear crystal (step 1430); performing a detachment method on the first photoresist on the domain inversion optical nonlinear crystal to form a pattern on the domain inversion optical nonlinear crystal The first metal layer is formed (step 1440); and in the temperature between about 5 〇〇 1 〇 5 〇 ° c, the nonlinear crystal of the yttrium reversal material is slit so as to invert the optical amorphous crystal A buried ribbon waveguide structure is formed (step 145A). In one embodiment, the optically non-linear lithium silicate, the quasi-periodic domain reversed lithium niobate, and the periodic periodic domain reversed lithium nitrite. The crystal system is a periodic domain reversal sharp periodic domain reversal
一種形成脊狀 ’構的製程包含以下步騍： 随旋轉塗佈（步驟151〇)， 凊參照第15圖，形成脊狀結 對_反轉銳酸鐘或紐酸鐘進行光p 22 201237531 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 1520);以鎵或氧化鎵對疇反轉鈮酸鋰或钽酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或钽酸鋰上形成第二金屬層（步驟 1530);對疇反轉鈮酸鋰或鈕酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 驟1540);以及對圖案化第二金屬層進行處理，以形成脊狀 結構（步驟1550)。 第16圖係依照本發明再一實施例繪示一種形成脊狀 結構的流程圖。 如第16圖所示，形成脊狀結構的製程包含以下步驟： 對疇反轉鈮酸鋰或钽酸鋰進行光阻旋轉塗佈（步驟1610)， 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 1620);以鎵或氧化鎵對疇反轉鈮酸鋰或鈕酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或钽酸鋰上形成第二金屬層（步驟 1630);對疇反轉鈮酸鋰或钽酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 驟 1640)。 此外，對疇反轉鈮酸鋰或鈕酸鋰上圖案化第二金屬層 以外之區域，進行鋰離子及/或質子之相互擴散與取代，以 形成複數個鈮酸鋰反轉區（步驟1650);以及利用氫氟酸腐 蝕圖案化第二金屬層以及前述些鈮酸鋰反轉區，以形成脊 狀結構(步驟1660)。 第17圖係依照本發明又一實施例繪示一種形成脊狀 結構的流程圖。 23 201237531 請參照第17圖，形成脊狀結構的製程包含以下步驟： 對疇反轉鈮酸鋰或钽酸鋰進行光阻旋轉塗佈（步驟1710)， 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 1720);以鎵或氧化鎵對疇反轉鈮酸鋰或鈕酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或鈕酸鋰上形成第二金屬層（步驟 1730);對疇反轉鈮酸鋰或钽酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 驟 1740)。 再者，利用反應式離子蝕刻技術，對疇反轉鈮酸鋰或 钽酸鋰上圖案化第二金屬層以外之區域進行處理，以形成 脊狀結構（步驟1750)。 第18圖係依照本發明另再一實施例繪示一種形成脊 狀結構的流程圖。 如第18圖所示，形成脊狀結構的製程包含以下步驟： 對疇反轉鈮酸鋰或钽酸鋰進行光阻旋轉塗佈（步驟1810)， 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 1820);以鎵或氧化鎵對疇反轉鈮酸鋰或鈕酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或鈕酸鋰上形成第二金屬層（步驟 1830);對疇反轉鈮酸鋰或钽酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 驟 1840)。 此外，利用高能量輻射粒子對該疇反轉鈮酸鋰或鈕酸 鋰上圖案化第二金屬層以外之區域進行照射（步驟1850); 以及利用反應氣體與離子撞擊經高能量輻射粒子照射之區 24 201237531 域，以形成脊狀結構（步驟I860)。 第19圖係依照本發明另又一實施例繪示一種形成脊 狀結構的流程圖。 請參照第19圖，形成脊狀結構的製程包含以下步驟： 對疇反轉鈮酸鋰或鈕酸鋰進行光阻旋轉塗佈（步驟1910)， 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 1920);以鎵或氧化鎵對疇反轉鈮酸鋰或钽酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或钽酸鋰上形成第二金屬層（步驟 1930);對疇反轉鈮酸鋰或鈕酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 驟 1940)。 再者，利用高能量輻射粒子對疇反轉鈮酸鋰或钽酸鋰 上圖案化第二金屬層以外之區域進行照射（步驟1950);以 及利用氫氟酸腐蝕經高能量輻射粒子照射之區域，以形成 脊狀結構(步驟1960)。 第20圖係依照本發明再另一實施例繪示一種形成脊 狀結構的流程圖。 如第20圖所示，形成脊狀結構的製程包含以下步驟： 對疇反轉鈮酸鋰或鈕酸鋰進行光阻旋轉塗佈（步驟2010)， 以形成第二光阻層；對第二光阻層進行曝光及顯影（步驟 2020);以鎵或氧化鎵對疇反轉鈮酸鋰或钽酸鋰進行濺鍍， 以於疇反轉鈮酸鋰或鈕酸鋰上形成第二金屬層（步驟 2030);對疇反轉鈮酸鋰或钽酸鋰上之第二光阻進行掀離 法，以於埋入式帶狀波導結構上形成圖案化第二金屬層（步 25 201237531 驟2040);以及利用精密切割技術對圖案化第二金屬層之兩 側進行銑削，以形成脊狀結構（步驟2050)。 第21圖係依照本發明一實施例繪示一種具有脊狀光 波導結構2102或2152之#線性光學參量產生結構21〇〇或 2150的流程圖。如第20圖所示，在經過第15圖至第2〇 圖的步驟之後，可於非線性光學參量產生結構2100或2150 上製作脊狀光波導結構2102或2152。 第22A圖係依照本發明一實施例繪示一種形成脊狀光 波導結構與複數個金屬電極的流程圖。第22B圖係依照本 發明一實施例緣示一種於脊狀光波導結構上形成複數個金 屬電極的流程圖。 如第22圖所示，形成脊狀結構與複數個金屬電極的製 程包含以下步驟：對疇反轉鈮酸鋰或钽酸鋰進行光阻旋轉 塗佈（步驟2210)，以形成第二光阻層；對第二光阻層進行 曝光及顯影（步驟2220);以鎵或氧化鎵對疇反轉銳酸鐘或 钽酸鋰進行濺鍍，以於疇反轉鈮酸鋰或鈕酸鋰上形成第二 金屬層（步驟2230);對疇反轉鈮酸鋰或鈕酸鋰上之第二光 阻進行掀離法，以於埋入式帶狀波導結構上形成圖案化第 二金屬層（步驟2240);對圖案化第二金屬層進行處理，以 形成脊狀結構（步驟2250)。 此外’形成介電緩衝層於脊狀結構上（步驟2260);形 成至少一第一金屬電極於介電緩衝層上（步驟2270);以及 於疇反轉鈮酸鋰或鈕酸鋰相對於脊狀結構之兩侧上分別形 成至少一第二金屬電極（步驟228〇)。 26 201237531 其中複數個金屬電極的製程（步驟2260至步驟2280) 請參照第22B圖，而由第22B圖所製造出的結構如第8A 圖所示，因此，請一併參照第8A圖與第22B圖。形成複 數個金屬電極的製程包含：首先，形成介電緩衝層820於 脊狀結構810上；形成至少一第一金屬電極830於介電緩 衝層820上；然後，於疇反轉鈮酸鋰或鈕酸鋰相對於脊狀 結構810之兩側上分別形成至少一第二金屬電極840。 第23A圖係依照本發明另一實施例繪示一種形成脊狀 結構與複數個金屬電極的流程圖。第23B圖係依照本發明 另一實施例繪示一種於脊狀結構上形成複數個金屬電極的 流程圖。 請參照第23圖，形成脊狀結構與複數個金屬電極的製 程包含以下步驟：對疇反轉鈮酸鋰或钽酸鋰進行光阻旋轉 塗佈（步驟2310)，以形成第二光阻層；對第二光阻層進行 曝光及顯影（步驟2320);以鎵或氧化鎵對疇反轉鈮酸鋰或 钽酸鋰進行濺鍍，以於疇反轉鈮酸鋰或钽酸鋰上形成第二 金屬層（步驟2330);對疇反轉鈮酸鋰或钽酸鋰上之第二光 阻進行掀離法，以於埋入式帶狀波導結構上形成圖案化第 二金屬層（步驟2340);對圖案化第二金屬層進行處理，以 形成脊狀結構（步驟2350);以及於疇反轉鈮酸鋰或钽酸鋰 相對於脊狀結構之兩側上分別形成至少一第一金屬電極與 至少一第二金屬電極(步驟2360)。 其中複數個金屬電極的製程（步驟2360)請參照第23B 圖，而由第23B圖所製造出的結構如第9A圖所示，因此， 27 201237531 請一併參照第9A圖與第23B圖。形成複數個金屬電極的 製程包含：於疇反轉鈮酸鋰或钽酸鋰相對於脊狀結構之兩 側上分別形成至少一第一金屬電極920與至少一第二金屬 電極930。 第24圖係依照本發明再一實施例繪示一種光學非線 性晶體光波導400與非線性光學參量產生結構800、900或 2100的單導垂直光場示意圖。 如第24圖所示，藉由本發明實施例之方法所製造出來 的光學非線性晶體光波導400與非線性光學參量產生結構 800、900或2100，其若以固定氧化鎵鍍膜厚度100nm，於 950°C下進行擴散製程並持續120分鐘，則其為單導非普極 化光波導。於操作上，使用160# m線寬之帶狀波導以 1500nm光入射，則其單導垂直光場如第24圖所示。 所屬技術領域中具有通常知識者當可明白，光學非線 性晶體光波導之製作方法中之各步驟依其執行之功能予以 命名，僅係為了讓本案之技術更加明顯易懂，並非用以限 定該等步驟。將各步驟予以整合成同一步驟或分拆成多個 步驟，或者將任一步驟更換到另一步驟中執行，皆仍屬於 本揭示内容之實施方式。 由上述本發明實施方式可知，應用本發明具有下列優 點。本發明實施例藉由提供一種光學非線性晶體光波導及 其製造方法，藉以改善採用質子交換法來形成埋入式光波 導時》會導致在南溫長時間操作下影響光波導元件之穩定 度的問題，以及光波導元件之非線性係數會受影響的問 28 201237531 題，並降低製程的複雜度。 再者，相較於先前技術需使用兩個不同基板以製備光 學非線性晶體光波導或非線性光學參量產生結構，本發明 實施例可降低基板的需求（例如：僅需使用單一基板），亦 即可降低製程的複雜度，並提昇製造良率。在以10mW平 均功率之紅外線雷射作為入射光下，綠光雷射的轉換效率 可達30%，深具產業應用競爭力。 雖然本發明已以實施方式揭露如上，然其並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與潤飾，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之說明如下： 第1圖係依照先前技術繪示一種銳酸裡光波導結構示 意圖及其製造方法的流程圖。 第2圖係依照另一先前技術繪示一種鈮酸鋰光波導結 構示意圖及其製造方法的流程圖。 第3圖依照再一先前技術繪示一種鈮酸鋰光波導結構 示意圖及其製造方法的流程圖。 第4圖係依照本發明一實施例繪示一種光學非線性晶 體光波導結構示意圖。 第5圖係依照本發明一實施例繪示一種光學非線性晶 29 201237531 體光波導的側視示意圖。 第6圖係依照本發明一實施例繪示一種光學非線性晶 體光波導之疇反轉結構的側視示意圖。 第7圖係依照本發明一實施例繪示一種光學非線性晶 體光波導中疇反轉結構之區段的側視示意圖。 第8A圖係依照本發明一實施例繪示一種非線性光學 參量產生結構的示意圖；第8B圖係依照本發明一實施例繪 示一種非線性光學參量產生結構的剖面圖。 第9A圖係依照本發明另一實施例繪示一種非線性光 學參量產生結構的示意圖；第9B圖係依照本發明一實施例 繪示一種非線性光學參量產生結構的剖面圖。 第10圖係依照本發明一實施例繪示一種光學非線性 晶體光波導之製作方法的流程圖。 第11圖係依照本發明一實施例繪示一種對光學非線 性晶體進行疇反轉之製作流程圖。 第12圖係依照本發明一實施例繪示一種對經疇反轉 之光學非線性晶體進行埋入式波導製程之製作流程圖。 第13圖係依照本發明另一實施例繪示一種對經疇反 轉之光學非線性晶體進行埋入式波導製程之製作流程圖。 第14圖係依照本發明一實施例繪示一種埋入式波導 製程的流程圖。 第15圖係依照本發明另一實施例繪示一種形成脊狀 結構的流程圖。 第16圖係依照本發明再一實施例繪示一種形成脊狀 201237531 結構的流程圖。 第17圖係依照本發明又一實施例繪示一種形成脊狀 結構的流程圖。 第18圖係依照本發明另再一實施例繪示一種形成脊 狀結構的流程圖。 第19圖係依照本發明另又一實施例繪示一種形成脊 狀結構的流程圖。 第20圖係依照本發明再另一實施例繪示一種形成脊 狀結構的流程圖。 第21圖係依照本發明一實施例繪示一種具有脊狀光 波導結構之非線性光學參量產生結構的流程圖。 第22A圖係依照本發明一實施例繪示一種形成脊狀光 波導結構與複數個金屬電極的流程圖；第22B圖係依照本 發明一實施例繪示一種於脊狀光波導結構上形成複數個金 屬電極的流程圖。 第23A圖係依照本發明另一實施例繪示一種形成脊狀 結構與複數個金屬電極的流程圖；第23B圖係依照本發明 另一實施例繪示一種於脊狀結構上形成複數個金屬電極的 流程圖。 第24圖係依照本發明再一實施例繪示一種光學非線 性晶體光波導與非線性光學參量產生結構的單導垂直光場 示意圖。 【主要元件符號說明】 31 201237531 400 :光學非線性晶體光波導 410 :埋入式帶狀光波導結構 800:非線性光學參量產生結構 810 :脊狀光波導結構 820 :介電緩衝層 830 :第一金屬電極 840 :第二金屬電極 900 :非線性光學參量產生結構 910 :脊狀光波導結構 920 :第一金屬電極 930 :第二金屬電極 1010〜1040 :步驟 1410〜1450 :步驟 1510〜1550 :步驟 1610〜1660:步驟 1710〜1750 :步驟 1810〜1860 :步驟 1910〜1960 :步驟 2010〜2050 :步驟 2100:非線性光學參量產生結構 2102 :脊狀光波導結構 2150 :脊狀光波導結構 2152 :脊狀光波導結構 32A process for forming a ridged structure comprises the following steps: with spin coating (step 151 〇), 凊 with reference to Fig. 15, forming a ridge pair _ reversal sharp acid clock or neo acid clock for light p 22 201237531 to form a second photoresist layer; exposing and developing the second photoresist layer (step 1520); sputtering the domain reversed lithium niobate or lithium niobate with gallium or gallium oxide to reverse the domain lithium niobate or Forming a second metal layer on the lithium niobate (step 1530); performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium nitrite to form a pattern on the buried strip waveguide structure A second metal layer (step 1540); and processing the patterned second metal layer to form a ridge structure (step 1550). Figure 16 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. As shown in FIG. 16, the process of forming the ridge structure comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium niobate (step 1610) to form a second photoresist layer; The photoresist layer is exposed and developed (step 1620); the domain reversed lithium niobate or lithium nitrite is sputtered with gallium or gallium oxide to form a second metal layer on the domain reversed lithium niobate or lithium niobate (Step 1630); performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium niobate to form a patterned second metal layer on the buried ribbon waveguide structure (step 1640). In addition, inter-diffusion and substitution of lithium ions and/or protons are performed on regions other than the patterned second metal layer on the domain reversed lithium niobate or lithium nitrite to form a plurality of lithium niobate reversal regions (step 1650). And patterning the second metal layer and the aforementioned lithium niobate reversal regions with hydrofluoric acid to form a ridge structure (step 1660). Figure 17 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. 23 201237531 Referring to FIG. 17, the process for forming a ridge structure comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium niobate (step 1710) to form a second photoresist layer; The second photoresist layer is exposed and developed (step 1720); the domain reversed lithium niobate or lithium nitrite is sputtered with gallium or gallium oxide to form a second metal on the domain reversed lithium niobate or lithium nitrite a layer (step 1730); performing a lift-off method on the second photoresist on the domain reversed lithium niobate or lithium niobate to form a patterned second metal layer on the buried ribbon waveguide structure (step 1740). Further, a region other than the patterned second metal layer on the domain reversed lithium niobate or lithium niobate is treated by a reactive ion etching technique to form a ridge structure (step 1750). Figure 18 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. As shown in FIG. 18, the process of forming the ridge structure comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium niobate (step 1810) to form a second photoresist layer; The photoresist layer is exposed and developed (step 1820); the domain reversed lithium niobate or lithium nitrite is sputtered with gallium or gallium oxide to form a second metal layer on the domain reversed lithium niobate or lithium nitrite (Step 1830); performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium niobate to form a patterned second metal layer on the buried ribbon waveguide structure (step 1840). Further, the region other than the patterned second metal layer on the domain reversed lithium niobate or lithium nitrite is irradiated with high energy radiation particles (step 1850); and the reaction gas and the ions are irradiated with the high energy radiation particles. Zone 24 201237531 domain to form a ridge structure (step I860). Figure 19 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. Referring to FIG. 19, the process for forming the ridge structure comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium nitrite (step 1910) to form a second photoresist layer; The resist layer is exposed and developed (step 1920); the domain reversed lithium niobate or lithium niobate is sputtered with gallium or gallium oxide to form a second metal layer on the domain reversed lithium niobate or lithium niobate ( Step 1930): performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium nitrite to form a patterned second metal layer on the buried ribbon waveguide structure (step 1940). Further, irradiating a region other than the patterned second metal layer on the domain reversed lithium niobate or lithium niobate with high energy radiation particles (step 1950); and etching the region irradiated with the high energy radiation particles with hydrofluoric acid To form a ridge structure (step 1960). Figure 20 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. As shown in FIG. 20, the process of forming the ridge structure comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium nitrite (step 2010) to form a second photoresist layer; The photoresist layer is exposed and developed (step 2020); the domain reversed lithium niobate or lithium niobate is sputtered with gallium or gallium oxide to form a second metal layer on the domain reversed lithium niobate or lithium nitrite (Step 2030): performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium niobate to form a patterned second metal layer on the buried strip waveguide structure (step 25 201237531 step 2040 And milling the sides of the patterned second metal layer using a precision cutting technique to form a ridge structure (step 2050). Figure 21 is a flow chart showing a #linear optical parametric generating structure 21A or 2150 having a ridged optical waveguide structure 2102 or 2152, in accordance with an embodiment of the present invention. As shown in Fig. 20, after the steps of Figs. 15 to 2, the ridge optical waveguide structure 2102 or 2152 can be formed on the nonlinear optical parametric generating structure 2100 or 2150. Figure 22A is a flow chart showing the formation of a ridged optical waveguide structure and a plurality of metal electrodes in accordance with an embodiment of the present invention. Figure 22B is a flow diagram showing the formation of a plurality of metal electrodes on a ridged optical waveguide structure in accordance with an embodiment of the present invention. As shown in FIG. 22, the process of forming the ridge structure and the plurality of metal electrodes comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium niobate (step 2210) to form the second photoresist. a layer; exposing and developing the second photoresist layer (step 2220); sputtering the domain inversion sharp acid clock or lithium niobate with gallium or gallium oxide for domain inversion of lithium niobate or lithium nitrite Forming a second metal layer (step 2230); performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium nitrite to form a patterned second metal layer on the buried strip waveguide structure ( Step 2240); processing the patterned second metal layer to form a ridge structure (step 2250). Further forming a dielectric buffer layer on the ridge structure (step 2260); forming at least one first metal electrode on the dielectric buffer layer (step 2270); and inverting the lithium niobate or lithium nitrite relative to the ridge At least one second metal electrode is formed on each side of the structure (step 228A). 26 201237531 The process of the plurality of metal electrodes (step 2260 to step 2280) Please refer to the 22B figure, and the structure manufactured by the 22B figure is shown in Fig. 8A. Therefore, please refer to Fig. 8A and 22B picture. The process of forming a plurality of metal electrodes includes: first, forming a dielectric buffer layer 820 on the ridge structure 810; forming at least one first metal electrode 830 on the dielectric buffer layer 820; then, inverting the lithium niobate or Lithium nitrite forms at least one second metal electrode 840 on opposite sides of the ridge structure 810, respectively. Figure 23A is a flow chart showing the formation of a ridge structure and a plurality of metal electrodes in accordance with another embodiment of the present invention. Figure 23B is a flow chart showing the formation of a plurality of metal electrodes on a ridge structure in accordance with another embodiment of the present invention. Referring to FIG. 23, the process of forming the ridge structure and the plurality of metal electrodes comprises the steps of: performing photoresist spin coating on the domain reversed lithium niobate or lithium niobate (step 2310) to form the second photoresist layer. Exposing and developing the second photoresist layer (step 2320); sputtering the domain reversed lithium niobate or lithium niobate with gallium or gallium oxide to form a domain reversed lithium niobate or lithium niobate a second metal layer (step 2330); performing a detachment method on the second photoresist on the domain reversed lithium niobate or lithium niobate to form a patterned second metal layer on the buried strip waveguide structure (step 2340) processing the patterned second metal layer to form a ridge structure (step 2350); and forming at least one first on each side of the domain reversed lithium niobate or lithium niobate relative to the ridge structure The metal electrode and the at least one second metal electrode (step 2360). For the process of the plurality of metal electrodes (step 2360), refer to FIG. 23B, and the structure manufactured by the 23B is as shown in FIG. 9A. Therefore, 27 201237531, please refer to FIG. 9A and FIG. 23B together. The process of forming a plurality of metal electrodes includes forming at least a first metal electrode 920 and at least a second metal electrode 930 on each of two sides of the domain reversed lithium niobate or lithium niobate relative to the ridge structure. Figure 24 is a schematic diagram showing a single-conducting vertical light field of an optical nonlinear optical waveguide 400 and a nonlinear optical parametric generating structure 800, 900 or 2100, in accordance with still another embodiment of the present invention. As shown in FIG. 24, the optical nonlinear crystal optical waveguide 400 and the nonlinear optical parametric generating structure 800, 900 or 2100 manufactured by the method of the embodiment of the present invention, if the thickness of the fixed gallium oxide coating is 100 nm, is 950. The diffusion process is carried out at ° C for 120 minutes, which is a single-conductor non-polarized optical waveguide. In operation, a 160# m line wide strip waveguide is incident on 1500 nm light, and its single-conducting vertical light field is as shown in Fig. 24. It will be understood by those skilled in the art that the steps in the method of fabricating an optical nonlinear crystal optical waveguide are named according to the functions performed by them, only to make the technology of the present invention more obvious and understandable, and not to limit the Wait for steps. It is still an embodiment of the present disclosure to integrate the steps into the same step or to split into multiple steps, or to replace either step with another step. It will be apparent from the above-described embodiments of the present invention that the application of the present invention has the following advantages. The embodiment of the present invention provides an optical nonlinear crystal optical waveguide and a manufacturing method thereof, thereby improving the stability of the optical waveguide component under the long-term operation of the south temperature by improving the proton exchange method to form the buried optical waveguide. The problem, as well as the nonlinear coefficient of the optical waveguide component, will be affected by the problem of 2012 28,831 and reduce the complexity of the process. Furthermore, compared to the prior art, two different substrates are used to prepare an optical nonlinear crystal optical waveguide or a nonlinear optical parametric generating structure, and embodiments of the present invention can reduce the requirements of the substrate (for example, only a single substrate is needed), This reduces the complexity of the process and increases manufacturing yield. Under the infrared light with an average power of 10mW as the incident light, the conversion efficiency of the green laser can reach 30%, which is highly competitive in industrial applications. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A schematic diagram of a waveguide structure and a flow chart thereof. Fig. 2 is a flow chart showing a structure of a lithium niobate optical waveguide and a method of manufacturing the same according to another prior art. Fig. 3 is a flow chart showing a schematic diagram of a lithium niobate optical waveguide structure and a method of manufacturing the same according to still another prior art. Fig. 4 is a schematic view showing the structure of an optical nonlinear crystal optical waveguide according to an embodiment of the invention. FIG. 5 is a side view showing an optical nonlinear crystal 29 201237531 bulk optical waveguide according to an embodiment of the invention. Figure 6 is a side elevational view showing a domain inversion structure of an optical nonlinear crystal optical waveguide according to an embodiment of the invention. Figure 7 is a side elevational view showing a section of a domain inversion structure in an optical nonlinear crystal optical waveguide in accordance with an embodiment of the present invention. 8A is a schematic diagram showing a nonlinear optical parametric generating structure according to an embodiment of the present invention; and FIG. 8B is a cross-sectional view showing a nonlinear optical parametric generating structure according to an embodiment of the invention. 9A is a schematic diagram showing a nonlinear optical parametric generating structure according to another embodiment of the present invention; and FIG. 9B is a cross-sectional view showing a nonlinear optical parametric generating structure according to an embodiment of the invention. FIG. 10 is a flow chart showing a method of fabricating an optical nonlinear crystal optical waveguide according to an embodiment of the invention. Figure 11 is a flow chart showing the fabrication of domain inversion of an optical nonlinear crystal according to an embodiment of the invention. Fig. 12 is a flow chart showing the fabrication of a buried waveguide process for a domain-inverted optical nonlinear crystal according to an embodiment of the invention. Figure 13 is a flow chart showing the fabrication of a buried waveguide process for a domain-reversed optical nonlinear crystal in accordance with another embodiment of the present invention. Figure 14 is a flow chart showing a buried waveguide process in accordance with an embodiment of the invention. Figure 15 is a flow chart showing the formation of a ridge structure in accordance with another embodiment of the present invention. Figure 16 is a flow chart showing the formation of a ridged 201237531 structure in accordance with yet another embodiment of the present invention. Figure 17 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. Figure 18 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. Figure 19 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. Figure 20 is a flow chart showing the formation of a ridge structure in accordance with still another embodiment of the present invention. Figure 21 is a flow chart showing a nonlinear optical parametric generating structure having a ridged optical waveguide structure in accordance with an embodiment of the present invention. FIG. 22A is a flow chart showing the formation of a ridged optical waveguide structure and a plurality of metal electrodes according to an embodiment of the invention; FIG. 22B is a diagram showing the formation of a plurality of ridged optical waveguide structures according to an embodiment of the invention. Flow chart of a metal electrode. 23A is a flow chart showing the formation of a ridge structure and a plurality of metal electrodes according to another embodiment of the present invention; and FIG. 23B is a view showing forming a plurality of metals on the ridge structure according to another embodiment of the present invention. Flow chart of the electrodes. Figure 24 is a schematic diagram showing a single-conducting vertical light field of an optical nonlinear optical waveguide and a nonlinear optical parametric generating structure in accordance with still another embodiment of the present invention. [Major component symbol description] 31 201237531 400: Optical nonlinear crystal optical waveguide 410: Buried ribbon optical waveguide structure 800: Nonlinear optical parametric generating structure 810: Ridge optical waveguide structure 820: Dielectric buffer layer 830: a metal electrode 840: a second metal electrode 900: a nonlinear optical parametric generating structure 910: a ridge optical waveguide structure 920: a first metal electrode 930: a second metal electrode 1010 104040: steps 1410 to 1450: steps 1510 to 1550: Steps 1610 to 1660: Steps 1710 to 1750: Steps 1810 to 1860: Steps 1910 to 1960: Steps 2010 to 2050: Step 2100: Nonlinear optical parametric generation structure 2102: Ridge optical waveguide structure 2150: Ridge optical waveguide structure 2152: Ridge optical waveguide structure 32