TW201235403A - Encapsulating resin composition for preapplication, semiconductor chip, and semiconductor device - Google Patents

Abstract

The present invention provides an encapsulating resin composition for preapplication used for wafer level underfill application, which can form a uniform coating film thickness when applied to a semiconductor wafer surface by spin coating. The encapsulating resin composition for preapplication of the present invention is used to obtain the sealing resin layer for sealing the gap between the semiconductor chip and the substrate. Said sealing resin layer is formed from a coating film by applying the encapsulating resin composition by spin coating on the surface of said semiconductor wafer with solder bumps, thereby achieving B-stage, and by flip-chip mounting a semiconductor chip with the coating film obtained by the semiconductor wafer singulation on the substrate via a solder bump. The encapsulating resin composition for preapplication comprises, (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a solvent, and thixotropic ratio thereof represented by viscosity a / viscosity b, is 1.5 or less, or contains (E) a silane coupling agent containing an amino group. Viscosity a: measured using a Brookfield viscometer, and measured at 0.5rpm, 25 DEG C. Viscosity b: measured using a Brookfield viscometer, and measured at 2.5rpm, 25 DEG C.

Description

201235403 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a semiconductor device for coating a flat conductor wafer for a wafer level underfill. [Prior Art] [0002] H to 'directly form the semiconductor ^ and the circuit board _pmounting in the semiconductor ° pmounting) ° in the flip chip mounting, to reinforce the joint portion of the wafer is generally a continuous surface of the age of the semiconductor [0003] method Generally, the capillary bottom filling (__ _ :;; ii makes the HH: board, the disposal of the net waste liquid and other environmental management must be more stringent. Problem: Capillary phenomenon is sealed and the sealing time becomes longer, there will be The productive [0004] law topic 'has been proposed without flow underfill method _ grease seal square cloth ΑΡΡ 〇 ) η). In this method, the resin composition is directly coated with a semiconductor wafer having a solder electrode from above, and is sealed when the second layer 5 or 5 is formed (Patent Document 2). Since the metal bond 盥 曰岔 曰岔 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The bottom is sealed, the secret type is not flow-free, and the solder is used for flip chip mounting. 3d: the resin composition is applied to a circuit-based molded body wafer, and the step of loading the fat composition and the bottom filling method are provided, and the respective circuit boards are supplied to the tree (0006). The type of sealing resin is widely referred to the patent literature. "Z,, 2: special; 9 = group 2 force = sealing composition can also contain coupling agent, then it; ft loaded with organic alkoxy The state of the art of the present invention is disclosed in Japanese Patent Application Laid-Open No. Hei. No. 2005-519168 [Patent Document 1] [Patent Document 3] 曰本特表2〇〇7_5〇4321 [Patent Document 4] Japanese Patent Publication No. 2-7-5〇4684 [Patent Document 5] 曰本特开2006-335817号[Patent Document 7] 曰本特开2007-9188 [Patent Document 7] International Publication No. 20q6/129630 pamphlet [Patent Document 8] 曰本特开2007-116079 (Patent Document 9) 曰本特开2008-303283 No. [Abstract] [Problems to be Solved by the Invention] 201235403 [0008] Η: Xi Shi? Pre-addition type also seals the resin composition. From the point of view of the production of semiconductor cymbals, it is required to obtain the system of the film. In order to meet this requirement, the ice is t θ a force... The expansion ratio is small and the strong agent is added. In the case of adding an inorganic filler [_] = to the composition of the L-blocking tree, the inventors of the present invention use the spin coating method to change the film thickness of the coating film by the conventional guide = none = == can reduce the middle right. If you hold a lot of solvent, the viscosity is reduced, but it is hardened + step [to solve the problem] [0010] machine filling == resin composition even if it contains no flaws The composition of the present invention can be solved by the composition of the invention having the thixotropic ratio of a certain number of enthalpy or less, or the composition of the composition of the composition of the present invention. The invention of the present invention is as follows. [0011] An additional bribe, which is produced by a spin-on coating of a semiconductor wafer with a spin-on coating. The semiconductor wafer is sliced and the film of the coated film is opened. The two Ba sheets are flip-chip mounted on the substrate by solder bumps, and the semi-conductive layer obtained by the coating layer is obtained. The sealing resin between the crystal# and the substrate is characterized as comprising: (A) epoxy resin, (B) hardener, 8 6 201235403 (c) inorganic filler, and (D) solvent; The viscosity ratio indicated by the viscosity b is 1.5 or less. Viscosity a: Measured at 5.5 rpm, 25 ° C using a cloth viscometer (vis 00 00 ° C). Viscosity b: using a cloth viscometer at 2.5 rpm, 25 Measured at °C. [2] The sealing resin composition for pre-application according to [1], wherein the thixotropic ratio is 13 or less. [3] The sealing resin composition for pre-application according to [1] or [2], wherein the inorganic filler (C) is in a weight percentage of 1% by weight of the solid content of the pre-applied sealing resin composition. %the above. [4] The pre-application sealing resin composition according to any one of [1] to [3] wherein the solvent (D) has a contact angle of 5 Å to the semiconductor wafer at 25t:. the following. [5] The sealing resin composition for pre-application according to any one of [3] to [3], wherein the solvent (D) has a boiling point of 6 〇 ° C or more. [6] The sealing resin composition for pre-application according to any one of [1] to [5], which further comprises an anthracene coupling agent (E). [7] [7] The pre-applied sealing resin composition according to [6], wherein the hydrazine contains an amine group. The octadecene coupling agent ¢) [0018] [8] a pre-applied sealing resin composition, The semiconductor wafer is sliced by the surface of the semiconductor having the solder bump by spin coating, and the coated film is made of $+ conductor solder. The bump is flip-chip mounted on the substrate, and a sealing resin layer formed by sealing the gap between the semiconductor wafer and the substrate formed by the film of 201235403 is obtained, which comprises: (A) epoxy resin, (B) hardening And (C) an inorganic filler, (D) a solvent, and (E) an amine group-containing decane coupling agent. [0019] _ [9] The pre-application sealing resin composition of [8], wherein The coupling agent (8) contains a secondary amine group or a tertiary amine group. [0020] [10] The sealing resin composition for pre-application according to [8] or [9], wherein the inorganic filler (C) is used for pre-application The solid content of the sealing resin composition is 1% by weight or more in % by weight. [0021] [11] As in [8] to [10] The pre-application sealing resin composition, wherein the solvent (D) has a contact angle with respect to the semiconductor wafer at 25 ° C of 50 or less. Eight [0022] [12] as in [8] to [11] A pre-applied sealing resin composition according to any one of the preceding claims, wherein the solvent (D) has a boiling point of 60 ° C or higher. [0023] [13] The pre-application of any one of [1] to [12] a sealing resin composition in which 'the inorganic filler (C) is spherical and has an average particle diameter of i 〇 mn to 8 〇〇 nm. ^ [0024] Π 4] Any one of [1] to [13] The pre-applied sealing resin composition according to any one of [1] to [14], wherein the substrate is a pre-applied sealing resin composition, Wherein the above-mentioned pre-applied sealing resin composition B-staged according to the following conditions

8 (D 201235403 Coating 偏差 The deviation of the film thickness calculated by the method is as follows: wood. Under the temperature condition of 25 C, 'at a 6-inch a circle,

Tmo^ ^ 500^ t"; Put into the heart to read ΐ; ί film will be rough, the degree to ^ ^ ^ day = the center point of the line on the 5 points [0026] _, its mixed butterfly The female coating method will be as follows: bump = round, 'wafer the wafer to obtain __ film ^ transfer ΐϊΐϊϊ 物 涂布 涂布 涂布 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体Shouting the composition of the seal to the =] step 'which will slice the aforementioned semiconductor wafer. The gap [m ίί is provided with a resin layer for bonding the semiconductor wafer and the substrate, and the sealing resin layer is used for ordering the substrate by using the solder bump for the substrate. The coating film is formed. [I9] A method of manufacturing a semiconductor device, comprising: 201235403 a coating step of coating a pre-applied sealing resin composition according to any one of [1] to [15] by a spin coating method Provided on the surface of the semiconductor bump having the solder bump; on the surface of the bump; B-staged step 'B-stages the coated Chi-e-fat composition; step g The semiconductor wafer is sliced to obtain a semiconductor wafer semi-conductive solder bump with a coating film, and the +conductor chip of the coated film is mounted on the substrate, and the coating film is formed by the coating film. A sealing resin layer that seals the gap between the conductor wafer and the substrate. ° [Effect of the Invention] a [0030] = This New Zealand _ pre-applied sealed tree sputum, when coated by the spin coating method on the surface of the semiconductor crystal®, the thickness of the coating is uniform (10), so the body wafer Product reliability is an improvement. [Embodiment] [Formula for Carrying Out the Invention] [0031] A pre-applied seal of the first aspect of the present invention is described [0032] <Pre-application sealing resin composition> Marriage lion cream, (8) hard, degree a / viscosity b shows a thixotropic ratio of 15 bribery = 8 201235403 [0033] This sad sample of pre-applied sealing resin composition by making the thixotropic ratio In the above 5, the thickness of the coating film obtained by dividing the =B-丄 is uniform, and the product of the semiconductor wafer is sinful. [(A) Epoxy Resin] Epoxy Resin (A) can be used in the presence of two or more epoxy groups in the molecule [0035] Specific *, can be exemplified by the fine varnish-type county resin, the secret ^Epoxy resin, naphthalene_county_, biphenyl type hetero resin, biphenyl aromatic J type epoxy resin, naphthalene skeleton type epoxy resin, diallyl type A epoxy resin, ^glycidide ring Oxygen compound, wonderful F dimethyl condensate epoxidized 5, double diglycidyl _ type epoxy compound, o-allyl bis, A ^ 3, 3', 5'5' · tetradecyl 4, 4L Chenglian benzene dimethyl condensate _ ring = two, 4,4 _ hydroxybiphenyl diglycidyl epoxy compound, 16 6 - _ ^ 联 = dimethyl glyco-type epoxy compound, silk secret varnish type Epoxidized ^ ~ love, varnish-type epoxy compound, double-desired D diglycidyl sulphonic ring ϊ ::: Λ 6:, two, glycidyl ether, aminophenol triglycidyl ether, etc. for two years. This search can be used alone or in combination. Further, when it is = raw ==, the composition 'Na+, α·[0036] of the epoxy resin is used, and the sealing resin composition may contain 1 时 when the solid content of the composition is L. 〜8〇% by weight, preferably 3〇~7〇% by weight [0037] [(9) Hardener] Type ^=polymerizable type hardener, catalyst type hardener, shrinking J Flux active hardener and the like. [0038] 11 201235403 The addition polymerization type hardener may, for example, be an aliphatic polyamine such as diethylenetriamine (DETA), triethylenetetramine (TETA) or m-benzoyldiamine (MXDA); In addition to diaminodiphenyl decane (DDM), inter-phenylenediamine (mpda), diaminodiphenyl hydrazine (DDS) and other aromatic polyamines, in addition, containing dicyandiamide (DICy^, a polyamine compound such as an organic acid dioxane; an alicyclic acid anhydride such as hexahydrophthalic anhydride (hydrazine) or decyl tetraphthalic anhydride (hydrazine); trimellitic anhydride (hydrazine), pyromellitic anhydride (PMDA), Diphenyl fluorenone tetracarboxylic acid (BTDA) or the like contains an acid anhydride such as an aromatic acid anhydride; a polyphenol compound such as a phenol aldehyde, a lacquer type phenol resin or a phenol polymer; a polythiol compound such as a polythioether, a thioester or a thioether; and an isocyanate prepolymer An isocyanate compound such as a polymer or a blocked isocyanate; an organic acid such as a slow acid-curing polyester resin, etc. [0039] The above-mentioned catalyst type curing agent may, for example, be benzoguanidinylamine (BDMA) or 2 , 4,6-paraxyl-dimethylaminomethylphenol (DMp_3〇) and other tertiary amine compounds, 2-methylimidylethyl_4' methyl coffee sitting (EMI2 4) 1 compound, BF3 complex, etc. Louis [0040] The combination of the hardener may be, for example, a urea resin which can be used as a urea resin, such as a rhodium-based urea resin. In the case of (4) the type of the epoxy or the purpose of the g, the physical properties of the cured product are more than two types, and the hardening agent of [0041] is fine, for example, a test, an acid needle, Containing at least one agent in the aroma/direct lining molecule, showing that the hardening element set to the activity of the semi-flux can be electrically bonded to the substrate; the oxide film of the surface of the target is also functional The compound of the group - and has a reaction with the ring-rich lipid [0042] Specific examples thereof include a heterobenzoic acid, 2,3-di-diphenylbenzene (tetra), and a dimethoprim 201235403 ίίΐΓ' [0043] , the amount of the hardener added with the flux activity is from 3G to 6G% by weight. If the flux activity is insufficient, the amount of the hardener added is not more than the amount of the ion [0044] in the addition amount of the epoxy=diluent agent. Cover, ^A 二艮彳1-above, it can mainly make additives, and make hardenability ^^ is the upper limit 値 below, it can eliminate excessive hardening [0045] [(C) Inorganic filler] 攸... use, can also mix a variety of ^ ^ Oxygen. Pre-application seals into objects ' f Γ ί 30 4*〇/^^5 5〇t*〇1ί;: The film thickness of the lining layer is the balance of the self-sufficiency, and the upper I? lanthanum contains 58% by weight or less, preferably 7〇重重量点. The upper limit値

[0046] M homogenization ~=2 no 2 ίί = Γ Γ 球 ' 其 其 其 ' ' 见 见 见 vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis vis In the case where the viscosity of the composition of the θ is high, the coating film formed by the spin coating method tends to have unevenness in 201235403. However, in this aspect, the thixotropic ratio is adjusted to a predetermined value. In the range, even if a spherical inorganic filler having the above average particle diameter is used, the thickness deviation of the film can be formed. [0047] [(D) Solvent] / Grain (D) can be used: a coating resin composition is applied The semiconductor wafer has a contact angle of 50 ° C or less at 25 ° C. When the semiconductor wafer has a polyimine or a lipid layer on the surface of the semiconductor wafer, the polyimine resin constituting the polyimide layer is preferably A polymer of diaminodiphenyl ether and pyromellitic anhydride. The soil of the pre-applied sealing resin composition of the present invention is excellent in wettability to a semiconductor wafer, so that the coating is thick and self-contained. It is more improved and the industry is also excellent. [0048] Further, the melting point (bp) can be used at a boiling point (bp) of 6 (TC or more). In this way, the storage stability of the seal lion composition and the wafer level bottom filling method are excellent. [0049] Such a solvent (D), specifically, for example, ethylene glycol monogram = Ρ145Ϊ), ethylene glycol monomethyl ether acrylic acid ρ56ΐ), ethylene glycol single (10) 酉: (bpl56 ° C), ethylene glycol monoethyl benzoate, ethylene glycol single 1 gamma 85. Bismuth, ethylene glycol monoethyl decyl acrylate (bp93t:), Ethylene bismuth oxime 酉 酉 酉 ( (bpl92 ° C), ethylene glycol monoisobutyl phthalic acid vinegar, B2 , ethylene glycol mono- _ _ _, ethylene glycol monophenyl propyl ethoxylate, 4- (2- ethoxy ethoxy ethoxy) methyl, 4, (2 匕 匕 氧基Ethylene benzene, propylene glycol-1-monodecyl ether-2-acetate, etc. are used on these ethoxylates. 2 or 2 kinds of solvents are preferably added in an amount of 10 to 70% by weight, preferably 25 to 45% by weight, based on the amount of the solvent used in the present invention. When the value is more than the value, the secret property is normal, and the _ is the lower limit of the amount of the glutinous rice. If 201235403 is the upper limit 値, the handling property after coating on the wafer (resistance resin) Dripping can be improved. [(E) decane coupling agent] The pre-applied sealing resin composition of this aspect may further contain an oxime coupling agent (E). By using the simmering coupling agent (E), the film thickness of the underfill can be made more uniform. [0052] The decane coupling agent (E), specifically, for example, 3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxyoxaline, 3-aminopropyldecyldiethyl a sulfonium coupling agent containing a primary amine group such as oxysteryl oxide; N-2 (aminoethyl) 3-aminopropyltrimethoxy oxycarbazide, N 2 (aminoethyl) 3-aminopropyl decyl fluorene a ruthenium coupler containing a secondary amine group such as oxydecane, N 2 (aminoethyl) 3 -aminopropyltriethoxy sulphur, N-phenyl-3-aminopropyltrimethoxy sulphur, etc., $ Or a hydrolyzed condensate of 2)-triethoxyindenyl-N-(l,3-didecyl-butylene)propylamine, or the like, a tertiary amine group-containing aequane coupling agent or the like. These can be used in combination of two or more types. [0053] Among these, it is preferably a primary or tertiary amine-containing chopping coupling agent, and more preferably a secondary amine-containing acridine coupling agent from the viewpoint of storage stability and the like. . The amount of the ceramsite coupling agent (E) to be added is 5% by weight, preferably 0.1 to 5% by weight based on the inorganic filler (c). In the resin composition for pre-application sealing of the present invention, an addition hardening accelerator which is a other component may be added as needed. The hardening accelerator may be any user generally used as a curing accelerator for an epoxy resin, and various types thereof may be used. Specific examples thereof include an imidazole, a phosphorus compound, a diazo compound, and a tertiary amine. Further, other components such as a low stress material, a reactive diluent material, a pigment, a dye, a leveling agent, and an antifoaming agent may be added in accordance with the following. The pre-application sealing resin composition of the present invention can be obtained by (A) epoxy resin, (B) hardener, (C) inorganic filler, (9) solvent, (6) decane coupling agent, if necessary, [0056] 】 201235403 plus. Further, the difference in film thickness of (c) inorganic material may be 1% by mass or less, preferably 7% or less. The composition of the pre-applied sealing resin of the present invention by spin coating is: = ίί = difference =;: = inhibition, so each piece of semi-conductive: 1 Β曰 juice = the difference of the remedy is _ Level, and the reliability of the rotating wafers [0057]. Weekly conditions • On a 6-pair wafer at a temperature of 25 C, the film is staged. Next, the oven knives set to 90 ° C are placed in the oven to heat up and the coating is applied to the coated resin composition of the method. The secret surface meter is used to read the gas spot on the surface of the coating film (4) and the film thickness at the measurement point. The standard deviation obtained by the measurement data passing through the wafer, ίΐί ϊί 1 1 fi) ' ^ (2 fi)' is flat; [0058] <Method of Manufacturing Semiconductor Device> - Below, The method of manufacturing the semi-conducting wealth. In the form of the practice, the bribe and the county board are described as examples of the substrate. First, the pre-application sealing resin composition of the present invention is applied to the surface of the bump of the semiconductor wafer for mounting the bumps: 曰曰16 [0059] 201235403 Printing ί ίί: For example, use a metal mask or a mesh mask to use a general printing method or a spin coating method. This product can be used in the spin coating method in accordance with the pre-fine * plus service seal resin composition of this β 0 Γ Γ Γ Γ 、 , , , 、 、 、 • • • • • • • • • • • • • • • • • • • • • The coated de-conductor crystal-tight touch test composition must be subjected to a drying step. 'When it is left to stand in the drying oven, it can be fine, and the step can be ==_Wei set to step [0063] It is possible to add 3 directly in this state after the use of the flip-chip bonding conductor substrate, and it is also possible to use the semiconductor wafer as a substrate to manufacture 17 201235403 mounting device "specifically" It is also possible to manufacture a wafer-stacked wafer in which a semi-conductive parent such as a self-made wire substrate is mounted (Liu Lu _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ==r surface (top surface)' with mounting = = [0066] Next, a piece of semiconductor wafer (the following ===== block is connected to the first semiconductor wafer) In addition, the tenth piece = Shi Thanks to the person who got it. This step _=;:= f This '_ solder bump and the first! Semiconductor crystal = contact again' to make the β·stage mr to seal the gap between the semiconductor wafer and the wiring substrate. The sealing resin composition for pre-application of the second aspect of the second embodiment is the same as the above-described first aspect of the present invention. <Present sealing resin composition for pre-application> Pre-applied sealing resin composition of aged ϊ The system comprises (4) an epoxy resin, (8) an inorganic filler, (D) a solvent, and a (meth)-containing amine coupling agent. ^ The composition of the pre-applied sealing resin of the present aspect is the above composition ϊίίϊτ The obtained fine-grained thickness is uniform, and the product of the semiconductor ^ [0070] 18 8 201235403 [(c) inorganic filler] [0071] ιίί sample (4) inorganic filler instrument shape is preferably spherical, the average particle ^Good for lGmn~_nm. If in the range _ 'Because the seal obtained can be ensured, the moon layer can be visible light Therefore, _ dicing and the like are excellent in the operation of the semiconductor wafer in advance. If the average particle diameter is the above, the sealing film is formed, and the coating film formed by the sho The uneven tilting is due to the fact that the pre-applied sealing tree of the present invention includes the amine group-containing stone 偶 偶 5_), so that even if a spherical inorganic agent having the above average particle diameter is used, the coating can be suppressed. The thickness deviation of the film. [(E) Amino group-containing decane coupling agent] An amine group-containing Wei coupling agent (specification), specifically, for example, 3-aminopropyl trisulfide and 3:aminopropyl dimethyl Oxyl; '3_Aminopropylmethyl 1 ethoxylate or the like containing a primary amine group; Ν·2(aminoethyl) 3_(tetra)yltrimethoxywei, ethyl)3.aminopropyl Methyl dimethoxy sec-second, Ν 2 (amine ethyl) 3 - amine propyl trimethoate, Ν phenyl _ 3 - amine propyl trimethoxy Wei # containing a second amine group of Wei 2 agent a decane coupling agent containing a tertiary amino group such as a water condensate of '3 (or 2)-triethoxydecyl-sodium (1,3-didecyl-butylene) propylamine. These can be used in various types or more. α [0073] Among these, it is preferred that the secondary amine group-containing or tertiary amine group-containing decane coupling is better from the viewpoint of the uniformity of the coating film and the balance of storage stability. Amine-based alkane coupling agent. The amount of the decane coupling agent (Ε) added is 〇丨% by weight, preferably 0.1 to 5% by weight based on the inorganic filler (c). [0074] The pre-applied sealing resin composition of the present aspect can be obtained by (A) an epoxy resin hardener, (C) an inorganic filler, (D) a solvent, and (e) an amine group; The coupling agent and the other components described above are mixed and vacuum defoamed to produce. In order to prevent the additives such as ^ 19 201235403 from becoming pores, it is preferable to confirm the heat resistance, the volatility, and the moisture of the substrate. Further, (6) the silk filler may be used after pretreating the (c) inorganic filler. The thixotropy of the pre-applied sealing resin composition of the present invention is preferably 1.5 or less, more preferably 13 or less, and the viscosity name at a high shear rate. From the viewpoint of increasing the workability and significantly reducing the workability, the lower limit 値 is preferably G 5 or more and 0.7 or more. Viscosity a: Use a cloth viscometer at rpm 5 rpm, 25. 〇 Determination. Viscosity b: Measured at 25 rpm and 2 yc using a cloth viscometer. The thickness of the coating film can be made more by making the thixotropic ratio within the above range. [Examples] Hereinafter, the present invention will be described in the examples, but the present invention is not limited to the examples. [Example 1] 25 parts by weight of a bisphenol F type epoxy resin (trade name: EXA_83〇Lvp, ==, epoxy equivalent 165) as an epoxy resin, and a biphenyl type epoxy resin (trade name) : =3000, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight, and solvent top acetic acid (manufactured by Tokyo Chemical Industry Co., Ltd., boiling point 192. _ parts by weight of 1 pre-mixed. In the mixture, sewing and adding Human as a hardened gentisic acid (melting point 2 〇 rc) 3 〇 parts by weight, as a coupling agent, a secondary amine system 夕 δ agent (N-phenyl-3. Aminopropyl trimethoxy decane, trade name: 1 part by weight, which is a hardening accelerator, is a phenylene group. Product name: No. 4, manufactured by Shikoku Chemicals Co., Ltd.) 重量" by weight, as: Authentic = 矽 (trade name: S025H, Admatedis Company-made, average particle size Q 7 ^ [0077] 6-inch sealing resin composition obtained at 25 ° C, dripping to » 8 20 201235403 Z on the two-use spin coater, rotating conditions Don't _ sec, connect 1000 rpm / 20 sec, make a coating 臈. 荖 办 办 办 物 物 物 ' ' ' Drying and coating the film privately. C. The oven 90 Si is composed of the sealing resin obtained by the above method. The composition and evaluation, and the results are shown in the table _ 1 0 '' [0078] (1) 25 ° C viscosity viscosity The meter is read at 2·5, and the above uses the cloth viscometer to measure the viscosity b' of the 2 Ιοοϊί of the pit and calculates the thixotropic ratio from the viscosity 37 of the viscosity 37. (3) The film thickness deviation (the middle film J is set at 5 o'clock on the line passing through the center point of the wafer ^ 'edge 邛 (2 points), the center point of the center point and the edge part (2 points, the standard obtained by the data) The deviation is the average % of the 値: the contact angle of the solvent (4) is taken from the lyophilic amine resin (diamine-based diphenyl-phenylene tetrabasic anhydride (6x6mm) to make the solution Contact, make this science (4), gamma p~5 (10)), method to measure [0080] [Example 2] Alkaloid H will change the Shixi siu coupling agent to a tertiary amine system Shi Xi siu coupling agent (3_3B In the same manner as in Example 1, except that the hydrolyzed condensate of oxindole Kb5 Qifn, 3; decyl-butylene) propylamine, trade name: 彳 amp &amp; 5403 Resin group secret coating film (4)®. Miscellaneous evaluation result table [_1] [Example 3]

The guess is changed from Wei F type Wei _ to two wire type A: , Nipponization difficulty, job equivalent 210), and 25 reset parts, the amount of inorganic filler is set to 190 parts by weight. ^Example 1 obtained the sealing composition and the wafer with the coating film in the same manner. The domain and the evaluation table secret table · [0082] [Example 4] Changed to diaryl type double A A 化 chemical, epoxy equivalent 21G), and the solvent from ethylene glycol monobutyl glycerol, monoterpene _ acetic acid vinegar (boiling point), hardener * heavy The amount of the inorganic filler was 190 parts by weight, and the sealing resin composition and the wafer with the coating film were used. The results of the evaluation and evaluation of the mussels are shown in Table 1. [0083] [Example 5] In addition to the epoxy resin from the (four) F-type epoxy resin into a two-wire type ^ίΐ gluten (manufactured by Nippon Kayaku, epoxy equivalent 21 〇), the Wei coupling agent from N stupid The base stone Xiyue is changed to 3_aminopropyltrimethoxy zebra (trade name T &quot; 2 1 越 学 学 工业 ) ) 、 、 、 、 、 、 、 、 、 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 乙二醇 = = = = = = = = = = _单甲趟_2&quot;&quot;Acetate 酉1, the amount of the hardener is set to 25 parts by weight, and the amount is set to 19 parts by weight. In the same manner as in the example 得, the date and the date of the test are obtained. ·Results [0084] [Comparative Example 1] A sealing resin composition and a coating were obtained in the same manner as in the case of Π1, except that the amount of the inorganic filler was not 1% by weight and the amount of the inorganic filler was not changed to 22 201235403: ί! Wafer film. The composition and evaluation results are shown in Table q. [0085] '[Comparative Example 2] The same procedure was used to obtain the same amount of solvent as the amount of the solvent. The sealing resin composition and the crystal solid with the coating film were attached. The composition and evaluation results are shown in Table 4. [0086], [Comparative Example 3] ^ 3 ί石夕Ϊ coupling agent &quot;phenyl_3 marriage base In the same manner as in Example 1, a sealing resin composition and a coating film-attached crystal were prepared in the same manner as in Example 1 except that the trimethoxy group was changed to 3 % oxypropyloxypropyl diethoxy wei (trade name: Shin-Etsu Chemical Co., Ltd.) The composition and evaluation results are shown in Table q. [Comparative Example 4] ^The Shixi Burning Coupler was obtained from Ν-benzene. ^Aminopropyl trimethoxy sinter was changed to methyl diethoxy zebra (trade name: Ζ-6383, manufactured by Toray Dow Coming Co., Ltd.). In the same manner as in Example 1, the resin composition was obtained. And a wafer with a coating film. The composition and evaluation results are shown in Table 4. [0088] [Table 1] Table-1 Epoxy resin hardening accelerator coupling agent General name Trade name

EXA-830LVP diaryl epoxy compound ~ gentisic acid ^ imidazolium - stupid-3 - aminopropyl trimethyl methoxy decane 3-triethoxy oxazide - N- (l, 3- dimethyl Hydroxy condensate of propylamine 3-k-propyl propyl decyl 3-glycidoxy propyl triethyl ____ oxy decane decyl triethoxy oxalate

RE-810NM 2Ρ4ΜΖ ΚΒΜ-573 KBE-9103 KBM-403 Z-6383 Example 1 25 75 30 0.1 Example 2 25 75 30 — 0.1 Example 3 75 25 ~ 25~ Example 5 Comparative Example 1 Comparison 75 25 ΊΓ 75 25 0.1 25 &quot;75* 30 Case 2 ~25 75 30 0.1 (weight ratio) Comparison 25 ~τΤ 25 ~Τ5 30 23 201235403 Inorganic filler cerium oxide ethylene glycol monobutyl, .g^~ propylene glycol-1-single曱_·2Γ£~ _^a§ SQ25H ~BCSA~

PGMEA 195 195 ~ 40~ 40 196.1 40 15 195 40 195 40- Evaluation of resin composition Results __Tactile change ratio 1

The box of Si-SSSAil^i^L i agent (~〇1 &lt;5 35 &lt;5 35 7 1.1 ~&lt;5~ 35 5 1.1 &lt;5 ~30~ 1.1 &lt;5 IT- 3.5 &gt ;20 35 1.6 &gt;10 35 &gt;10 35 6 2.8 &gt;ΐό 35— [0089] Than, you ϋίΐ: The deviation of the film thickness of the sealing resin composition of the example and the comparative example was Suppressing the reliability of the product of the material wafer [Industrial use possibility] [_] The semi-use sealing resin composition is coated by spin coating [Simple description]

Ml ο [Main component symbol description]

Claims (1)

201235403 VII. Patent application scope: Pre-applied occupational test object, which is coated on the surface of the semiconductor crystal _ solder bump by the coating method and the U-stage sheep is re-formed, The semiconductor wafer is diced and the lithographic wafer is flip-chip mounted on the substrate by using solder bumps, and the gap between the semiconductor wafer and the substrate is sealed and sealed, and ν is characterized by : (Α;) epoxy resin, (Β) hardener, (C) inorganic filler, and (D) solvent; the thixotropic ratio shown by viscosity a/viscosity b is 1.5 or less; viscosity a: using cloth Viscosity meter, at 〇 5 rpm, 25. [Measurement; Viscosity b: Using a cloth viscometer at 25 rpm, 25. 〇 Determination. (2) The sealing resin composition for pre-application of the first aspect, wherein the sealing resin composition of the pre-application of the first or second aspect of the thixotropy, the solidification of the sealing resin composition for pre-application Weight = 30% by weight or more.里里/0 I, such as Vi, is composed of a pre-applied sealing resin for the first to third items of the towel. The semiconductor wafer is at 25 by the bismuth (9). The contact angle of the crucible is as follows: the following is the second special = two f plus the sealing resin composition = the term of the application - the pre-application sealing resin composition = the patent is turned over the sixth item is difficult to use the sealing resin coupling agent (E) Contain; #丝. ^TWei pre-added with the dense-wearing grease, which was fabricated on the surface of the solder bumps of the semiconductor wafers coated with 2 turns and made B-stage X' The semiconductor wafer is sliced and the semiconductor 25 201235403 wafer obtained by the coating film is flip-chip mounted on the substrate by using solder bumps, thereby obtaining a gap between the semiconductor wafer and the substrate by the coating film. The sealing resin layer is characterized by comprising: (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, a (〇) solvent, and (E) an amine group-containing decane coupling agent. 9. The sealing resin composition for ship addition according to claim 8 wherein the coupling agent (E) contains a secondary amine group or a tertiary amine group. The sealing resin composition for pre-application of the eighth aspect of the invention, wherein the two-component filler (C) is contained in an amount of 30% by weight or more based on the weight of the solid component (10) of the pre-application sealing resin composition. U/° m r The composition of the pre-applied sealing resin according to any one of the items 8 to 1 is η '2, and the connection (4) of the dying conductor 91 at 25 ° C is 5 G. the following. The pre-applied sealing resin composition according to any one of items 8 to 11, wherein the solvent (D) has a boiling point of 6 (rc or more. Wind L3· as in the range of items 1 to 12) Pre-application sealing resin composition 14 j / machine-filling agent (C) is spherical 'its average particle diameter is 1 〇 nm to 800 nm. L ^ Items 1 to 13 of the pre-applied bribe resin composition , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Composition B• Staged Ϊ 偏差 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 4 4 4 if if if if if if if if if if if if if if if if if if if if if if if if if if if if if if if if if Female charm machine, Kawasaki 5 people 1000rpm / 20 seconds, made X too depiction. When -, no 90 eight # + 乍 into the main cloth film, pick up, put into the oven set to 9 (rc 90 knives ^ Heat drying and B-staged; remove the coating film by using the contact surface roughness meter to measure the difference between the surface of the shell and the surface of the wafer. The thickness of the film; the measurement 26 201235403 ^ is 5 points on the line of the center point of the wafer, the center 2, the center of the edge and the edge of the edge, the 遗", · 占). The silk material (4) is reduced by 5 points. The sewing material is made by the spin coating method. A pre-n shading method will be applied as a pre-% of any of the items in items 1 to I5 of the patent application. (4) Tree test object coating road = round wire with scales; U-bump +conductor wafer-stage step 'which applies the pre-applied test article to be coated to a sheeting step'. The wafer is sliced. 18. A semiconductor device, which is useful for With a sealed sealing resin layer, Miao Ship (4) 曰曰 与 与 余 19 19 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. Applying a sealing resin composition to the half of the bucket bump! On the surface of the two circles having the solder bump; a B-stage segmentation step of coating (4) pre-application domain sealing composition to the semiconductor crystal _ #化,# 咖咖啡膜膜半导;:==覆;=用附' The gap between the conductor wafer of the film and the substrate is tightly sealed 形成 布 布 film formation will be half}:: 27