201234473 六、發明說明： 【發明所屬之技術領域】 本發明涉及生長第]π族元素和第v族元素化合物薄膜的裝置和 .方法，尤其涉及-種第m族元素和第v族元素化合物薄膜生長反應 腔的清潔方法及反應腔狀態恢復方法。 【先前技術】 作為-種典型的第M族元素和第¥族元素化合物薄膜，氮化嫁 (G=N)疋一種廣泛應用於製造藍光、紫光和白光二極體、紫外線檢 ’貝J器和尚功率微波電晶體的材料。由於GaN在製造適用於大量用途 的低能耗農置（如，led)中具有實際和潛在的用途，GaN薄膜的生 長受到極大的關注。201234473 VI. Description of the Invention: [Technical Field] The present invention relates to a device and a method for growing a film of a π-group element and a v-group element compound, and more particularly to a film of a group m element and a group v element compound Cleaning method of growth reaction chamber and recovery method of reaction chamber state. [Prior Art] As a typical Group M element and Group ** element compound film, nitriding (G=N) 疋 is widely used in the manufacture of blue, violet and white light diodes, UV detection Monk power microwave crystal material. The growth of GaN thin films has received great attention due to the practical and potential use of GaN in the manufacture of low-energy farms (eg, led) suitable for a wide range of applications.
GaN薄膜能以多種不同的方式生長，包括分子束外延（MBE)法、 氫化物蒸氣階段外延（HVPE)法、金屬有機化合物化學氣相沉積 (M0CVD)法等。目前’ M0CVD法是用於為生產LED得到足夠品質的 薄膜的優選的沉積方法》 M0CVD工藝通常在一個具有較高溫度控制的環境下的反應器或 反應腔内通過熱工藝（ther随1 pr〇cessing)的方式進行。通常， 由^含第III族元素（例如鎵（Ga))的第一前體氣體和一含氮的第 -别體氣體（例如氨⑽被通人反應㈣反應以在被加熱的基片 士形成GaN薄膜。一載流氣體（carrier gas)也可以被用於協助運輸 刖體氣體至基片上方。這些前體氣體在被加熱的基片表面混合反 應，進而形成第III族氮化物薄膜（例如GaN薄膜）而沉積在基片 表面。 然而，在前述M0CVD工藝過程中，GaN薄膜或其他反應產物不 僅會生長或沉積在基片上’也會生長或沉積在反應腔内的其他反應 腔部件上’例如，在反應腔的側壁上、在基片的支撐座（susceptor) 上在氣體分佈裝置上、或其他地方《這些不希望出現的反應腔内 的'冗積物積聚（undesired deposits or residues)會在反應腔内 201234473 產生雜質（particles) ’並可能會從附著處剝落開來，隨著反應氣體 的氣流在反應腔内到處擴散，最後會落在被處理的基片上，而造成 基片產生缺陷或失效，同時還會造成反應腔的污染，並對下一次 M0CVD工藝品質產生壞的影響。因而，在經過一段時間的M〇CV])薄 膜薄膜生長讀後’必須停止薄社長工藝，和實施-個反應腔 清潔過程來將這些附著在反應腔内的沉積物積聚清除掉。 目前，業内採用的一種反應腔清潔的方式是“手工清潔，，。即， 操作人員必須先停止薄膜生長工藝，等待反應腔内部溫度降低至一 定溫度後，再打開反應腔，用刷子將附著在反應腔内部（如：反應 腔側壁、紐分佈裝置）上的沉積物積聚從其附著表面上“刷，，下 來並移出至反應腔内部；當沉積物積聚很厚時，操作人員還需要通 過一種工具將它們從其附著表面上“刮，，下來並移出至反應腔内 部。操作人員還可以將某些附著有沉積物積聚的反應腔部件（如： 基片基座）從反應腔内取出，並換上新的、“乾淨”的反應腔部件。 這種清潔方式的缺點是：清潔反應腔必須要停止原薄膜薄膜生長工 藝，並且要等待相當長的時間使反應腔内部溫度降低至適合人工清 潔的溫度，還必須在打開反應腔的情況下進行，由於這些操作需要 在停機的狀態下進行，對於反應腔使用者而言，每一次反應腔 清潔都會導致薄膜生長工藝被迫停止，而這將導紐應腔的工藝生 產的吞吐量（throughput)減少、增加生產者的使用成本。而且由於 這種清潔方式m潔”，@而清潔得並不徹底，每次清潔的 結果也不一致，導致後續的薄膜生長工藝可能產生工藝品質的偏移 和缺陷。 同時，業内還面臨的一個技術難題是：在對反應腔清潔處理後， 由於反應㈣會絲或在反應腔表面吸附—麵統體殘餘或清潔 過程中產生的反應副產物，這些清潔氣體殘餘或反應副產物的存 在，會對下一次薄膜生長工藝產生不利影響，導致生產出來的薄膜 均一性不穩定或產生瑕疫。 201234473 因而，有必要開發一種有效的、省時的方式將所述第皿族元素 和第v族元素化合物從反應腔内清除掉，並保證每次清潔的品質和 一致性’且不對後續薄膜生長產生不利影響。 【發明内容】 針對背景技術中的上述問題，本發明的目的在於提供一種成本節 約地、有效地清除第皿族元素和第V族元素化合物薄膜生長反應腔内 的沉積物積聚的方法，並且減少該反應腔清潔對後續薄膜生長工藝的 影響。 w 根據本發明的一方面，本發明提供了一種第皿族元素和第V族元 素化合物薄膜生長反應腔的清潔方法’包括以下步驟： 反應腔清潔步驟，包括向所述反應腔内通入清潔氣體，在所述反 應腔内形成該清潔氣體的等離子體，維持所述清潔氣體的等離子體一 第一時間段’以清除所述反應腔内部的沉積物積聚； 反應腔狀態恢復步驟，包括向所述反應腔内通入包含第皿族元素 和第V族元素的反應氣體，並在所述反應腔内作用一第二時間段，以 在所述反應腔内部的表面上形成第π族元素和第v族元素化合物的塗 層。 其中，在實施所述反應腔清潔步驟之前，還包括將反應腔内的基 .片從反應腔内移出的步驟。 其中’所述清潔氣體包括含Η或含鹵族元素的氣體》 其中，所述清潔氣體包括含C1或含F或含Br的氣體。 其中，所述含Η的氣體包括：H2、ΗΠ、NH3、HBr、HI、CH4、CHF3、 CH2F2中的一種或至少兩種混合氣體。 其中，所述含Cl的氣體包括：HQ、C12、C1F、C1F3、C1F5、BC13、 SiC14、CHC13、CH3C1中的一種或至少兩種混合氣體。 其中，所述含F的氣體包括：C1F、C1F3、CC12F2、C1F5、NF3、 SF6、CF4、C2F6、C3F8、C4F6、C4F8、CHF3、CH2F2、NF3 中的一種或 至少兩種混合氣體。 201234473 其中，所述反應腔狀態恢復步驟包括在所述反應腔内形成該第^ 族元素的反應氣體或/和第v族元素的反應氣體的等離子體，維持所述 等離子體至所述第二時間段。 其中，所述反應腔狀態恢復步驟包括加熱所述反應腔内部至5〇〇 °(：至i4〇o°c，使所述第m族元素和第v族元素的反應氣體在熱的作用 下化學反應。 其中，所述塗層包括GaN。 其中，所述沉積物積聚包括第m族元素和第v族元素化合物。 根據本發明的另一方面，本發明提供了 一種第皿族元素和第v族 元素化合物薄膜生長反應腔的清潔方法，包括以下步驟： 反應腔清潔步驟，包括向所述反應腔内通入清潔氣體，在所述反 應腔内形成該清潔氣體的等離子體，維持所述清潔氣體的等離子體一 第一時間段，以清除所述反應腔内部的沉積物積聚； 反應腔狀態恢復步驟，包括向所述反應腔内通入反應腔狀態恢復 氣體，所述反應腔狀態恢復氣體與反應腔内殘餘的清潔氣體反應，將 反應腔内殘餘的清潔氣體反應去除。 其中，在實施所述反應腔清潔步驟之前，還包括將反應腔内的基 片從反應腔内移出的步驟。 其中，在實施所述反應腔狀態恢復步驟之後，還包括向所述反應 腔内通入包含第ΠΙ族元素和第V族元素的反應氣體，所述反應氣體在 所述反應腔内在等離子體作用下或在熱化學氣相沉積的環境下進行反 應，以在所述反應腔内部的表面上形成第π[族元素和第V族元素化合 物的塗層。 其中，所述清潔氣體包括含Η或含齒族元素的氣體。 其中，所述清潔氣體包括含C1或含F或含Br的氣體。 其中，所述含Η的氣體包括：H2、Ηα、NH3、HBr、HI、CH4、CHF3、 CH2F2中的一種或至少兩種混合氣體。 其中，所述含C1的氣體包括：HC卜C12、C1F、C1F3、C1F5、、 201234473GaN thin films can be grown in a variety of different ways, including molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (M0CVD), and the like. Currently, the M0CVD method is a preferred deposition method for obtaining a film of sufficient quality for the production of LEDs. The M0CVD process is usually passed through a thermal process in a reactor or reaction chamber with a higher temperature control environment (ther with 1 pr〇) The way of cessing). Usually, a first precursor gas containing a Group III element (such as gallium (Ga)) and a nitrogen-containing first-part gas (for example, ammonia (10) are reacted by a human (4) reaction to be heated in a substrate. A GaN film is formed. A carrier gas can also be used to assist in transporting the gas to the substrate. These precursor gases are mixed and reacted on the surface of the heated substrate to form a Group III nitride film ( For example, a GaN film is deposited on the surface of the substrate. However, during the aforementioned MOCVD process, the GaN film or other reaction product will not only grow or deposit on the substrate but will also grow or deposit on other reaction chamber components in the reaction chamber. 'For example, 'undesired deposits or residues' on the side walls of the reaction chamber, on the susceptor of the substrate on the gas distribution device, or elsewhere in these undesired reaction chambers. Will generate particles in the reaction chamber 201234473 'and may peel off from the attachment, as the gas flow of the reaction gas spreads everywhere in the reaction chamber, and finally falls on the treated base On the other hand, the substrate is defective or invalid, and it also causes contamination of the reaction chamber and has a bad influence on the quality of the next M0CVD process. Therefore, after a period of M〇CV]) film film growth read ' The thin president process must be stopped, and a reaction chamber cleaning process must be performed to remove these deposits deposited in the reaction chamber. At present, a method of cleaning the reaction chamber used in the industry is “manual cleaning, that is, the operator must first stop the film growth process, wait for the internal temperature of the reaction chamber to decrease to a certain temperature, then open the reaction chamber and attach with a brush. The accumulation of deposits on the inside of the reaction chamber (eg, the side wall of the reaction chamber, the distribution device) is “brushed from the surface of the reaction, and is removed and removed to the inside of the reaction chamber; when the sediment accumulates very thick, the operator also needs to pass A tool “scraping, removing, and removing them from the surface of the reaction chamber into the interior of the reaction chamber. The operator can also remove some of the reaction chamber components (eg, substrate pedestals) with deposits deposited from the reaction chamber. And replaced with a new, "clean" reaction chamber component. The disadvantage of this cleaning method is that the cleaning reaction chamber must stop the original film film growth process, and wait for a considerable period of time to reduce the internal temperature of the reaction chamber to a suitable The temperature of manual cleaning must also be carried out with the reaction chamber open, as these operations need to be carried out in a shutdown state. For the user of the reaction chamber, each cleaning of the reaction chamber will cause the film growth process to be stopped, which will reduce the throughput of the process production of the guide chamber and increase the cost of the producer. The cleaning method is clean, @ and the cleaning is not thorough, and the results of each cleaning are also inconsistent, resulting in subsequent film growth processes may cause process quality deviations and defects. At the same time, a technical problem faced by the industry is: after cleaning the reaction chamber, these cleaning gas residues are caused by the reaction (4) filaments or adsorption on the surface of the reaction chamber - residual reaction in the process or cleaning process by-products. Or the presence of reaction by-products may adversely affect the next film growth process, resulting in uniformity of the film produced or plague. 201234473 Thus, it is necessary to develop an efficient and time-saving way to remove the retort element and the v-th element compound from the reaction chamber and ensure the quality and consistency of each cleaning' without subsequent film growth. Have an adverse effect. SUMMARY OF THE INVENTION In view of the above problems in the background art, an object of the present invention is to provide a method for cost-effectively and efficiently removing deposit accumulation in a film growth reaction chamber of a group member element and a group V element compound, and reducing The effect of the cleaning of the reaction chamber on the subsequent film growth process. According to an aspect of the invention, the present invention provides a method for cleaning a film growth reaction chamber of a group member element and a group V element compound, comprising the steps of: a reaction chamber cleaning step comprising introducing a cleaning into the reaction chamber a gas, a plasma of the cleaning gas is formed in the reaction chamber, a plasma of the cleaning gas is maintained for a first period of time to remove deposits accumulated inside the reaction chamber; and a reaction chamber state recovery step includes a reaction gas containing a group member element and a group V element is introduced into the reaction chamber, and a second period of time is applied in the reaction chamber to form a π-element element on the surface inside the reaction chamber. And a coating of the compound of the v-th element. Wherein, before the step of performing the reaction chamber cleaning, the step of removing the substrate in the reaction chamber from the reaction chamber is further included. Wherein the cleaning gas comprises a gas containing cerium or a halogen-containing element, wherein the cleaning gas comprises a gas containing C1 or containing F or containing Br. Wherein, the cerium-containing gas comprises: one of H2, hydrazine, NH3, HBr, HI, CH4, CHF3, CH2F2 or at least two mixed gases. Wherein, the Cl-containing gas comprises: one or at least two mixed gases of HQ, C12, C1F, C1F3, C1F5, BC13, SiC14, CHC13, CH3C1. Wherein, the F-containing gas comprises: one of C1F, C1F3, CC12F2, C1F5, NF3, SF6, CF4, C2F6, C3F8, C4F6, C4F8, CHF3, CH2F2, NF3 or at least two mixed gases. 201234473 wherein the reaction chamber state recovery step includes forming a plasma of a reaction gas of the group element or/and a reaction gas of a group v element in the reaction chamber, maintaining the plasma to the second period. Wherein the reaction chamber state recovery step comprises heating the inside of the reaction chamber to 5 〇〇° (: to i4〇o°c such that the reaction gases of the m-th element and the v-th element are under the action of heat a chemical reaction, wherein the coating layer comprises GaN, wherein the deposit accumulation comprises a group m element and a group v element compound. According to another aspect of the invention, the invention provides a dish group element and A cleaning method of a v-group compound film growth reaction chamber, comprising the steps of: a reaction chamber cleaning step comprising: introducing a cleaning gas into the reaction chamber, forming a plasma of the cleaning gas in the reaction chamber, maintaining the Cleaning the plasma of the gas for a first period of time to remove deposits inside the reaction chamber; and recovering the reaction chamber state, including introducing a reaction gas into the reaction chamber to recover the gas, and recovering the state of the reaction chamber The gas reacts with the residual cleaning gas in the reaction chamber to remove the residual cleaning gas in the reaction chamber, wherein before the reaction chamber cleaning step is carried out, a step of removing the substrate in the reaction chamber from the reaction chamber. After performing the reaction chamber state recovery step, the method further includes introducing a reaction containing a steroid element and a group V element into the reaction chamber. a gas in which the reaction gas is reacted in the reaction chamber under the action of a plasma or in a thermal chemical vapor deposition to form a π-[Group element and a Group V element on the surface inside the reaction chamber. a coating of a compound, wherein the cleaning gas comprises a gas containing a cerium or a tooth containing a group. The cleaning gas comprises a gas containing C1 or containing F or containing Br. The gas containing cerium includes: One or at least two mixed gases of H2, Ηα, NH3, HBr, HI, CH4, CHF3, CH2F2, wherein the C1-containing gas comprises: HC, C12, C1F, C1F3, C1F5, 201234473
SiCU、CHC13、CH3C1中的一種或至少兩種混合氣體》 其中，所述含F的氣體包括：ciF、C1F3、CC12F2、C1F5、NF3、 SF6、CF4、C2F6、C3F8、C4F6、C4F8、CHF3、CH2F2、NF3 中的一種或 至少兩種混合氣體。 其中’所述反應腔狀態恢復氣體包括H2、CH4、N2、NH3、Ar、He 中的一種或至少兩種混合氣體。 其中’所述反應腔狀態恢復步驟包括在所述反應腔内形成該反應 腔狀態恢復氣體的等離子體’維持所述等離子體至一第二時間段。 其中’所述反應腔狀態恢復步驟包括加熱所述反應腔内部至3〇〇 °C至1400°C ’使所述反應腔狀態恢復氣體在熱的作用下化學反應。 其中’所述沉積物積聚包括第皿族元素和第V族元素化合物。 其中，所述第瓜族元素選自鎵、銦、鎵和銦的組合、鎵和鋁的組 合、銦和鋁的組合、以及鎵和銦和鋁的組合。 其中，所述第V族元素選自氮、磷、砷、銻、以及前述元素的至 少兩種元素的組合。 【實施方式】 下面結合附圖對本發明進行具體說明。 本發明提供一種快速、有效地清除第]Π族元素和第v族元素化合 物薄膜生長反應腔内的沉積物積聚的方法。使用該方法對生長反應腔 清潔處理，不僅保證每次清潔的品質和一致性，而且不會對後續的 第ΠΙ族元素和第V族元素化合物薄膜生長工藝產生不利的影響。 如圖1所示，圖1為根據本發明一種實施方式所提供的用以實現 本發明的清财法的裝置1G，雜置10實社也構成糾族元素和 第V族元素化合物薄膜生長裝置的一部分，亦即，該裝置1〇的反應腔 11同時也是第m族元素和第v族元素化合物細生長反應腔或為其一 部分，用於在該裝置ίο的反應腔内部18生長第皿族和第¥族元素化 合物薄膜。 具體而言，圖1中’裝置10包括反應腔u，其包括接地的側壁 201234473 12和腔底13。反應腔11的内部18設置有一個或多個基片基座17 β 在M0CVD薄膜生長工藝過程中，一片或多片基片w可以直接地被放置 在基片基座17上，或者，這些若干片基片w也可以通過放置在一整個 載片盤（未圖示）上，然後再被放置在基片基座17上，從而於基片w 的表面上生長所述第ΠΙ族元素和第V族元素化合物薄膜。可選擇地， 基片基座17可以通過設置於其下方的連接機構及驅動機構（未圖示） 帶動而旋轉’從而帶動基片W旋轉，以增強工藝結果的均一,)·生。當然， 基片W也可以以其他的已知的或未來開發出來的旋轉方式旋轉。為了 向反應腔11内通入反應氣體源或清潔氣體，作為一種實施方式，在圖 1所示的裝置10中，頂部15上還可以設置一氣體分佈裝置（gas distribution showerhead)30。例如，一種可行的實施方式是，在其 上設置相互連接的氣體擴散空間32和多個氣體分佈孔34，氣體擴散 空間32與氣體傳輸管道42相連接，氣體傳輸管道42又與氣體源4〇 (包括：反應氣體源40a或清潔氣體源4〇b)相連接。所述氣體源4〇 (40a，40b)通過所述氣體分佈孔34被輸入至所述反應腔内部18。 在基片基座17的内部、或下方、或附近的其他位置可以設置各類常用 的或未來可能採用的溫度加熱和控制裝置（未圖示），這樣可以在工藝 的過程中，保持基座17上方的基片溫度控制在約5〇〇〇c至約14〇〇〇c之 間。反應腔11的内部18通過設置於其下方的排氣裝置16而被維持成 .一真空的處理環境。 在進行薄膜生長工藝時，反應腔11是採用熱薄膜生長工藝 (thermal processing)或其他等離子體輔助的方式進行的◦舉例說 明’在採用熱薄膜生長工藝時，反應腔内部18的基片基座17和基片 W會被加熱至約500°C至約1400X：之間，薄膜生長工藝所用的反應氣 體源會從反應腔11的適當位置處通入反應腔内部18，反應氣體源在 熱的作用下起化學反應而在基片W上沉積薄膜或外延生長薄膜，基片 基座17在薄膜生長過程中保持旋轉，以提高薄膜生長的均一性。在該 裝置10的反應腔11運行一段時間的薄膜生長工藝後，所述反應腔内 201234473 部18的各種反應腔部件上會沉積一定量的沉積物積聚，因而有必要對 該反應腔内部進行清潔。 如前所述’在M0CVD工藝過程中，GaN薄膜或其他反應產物（以 下統稱為：反應腔内的沉積物積聚）不僅會生長或沉積在基片上，也 會生長或沉積在反應腔内的其他零部件上，例如，在反應腔u的内側 壁上、在基片基座17上等等。由於M0CVI)工藝會涉及很多層的沉積以 及很長時間的沉積，這些沉積物積聚通常包括第m族元素和第v族元 素化合物。例如，可能是如下薄膜：金屬化合物（例如，GaN、InN、 AIN、InGaN、AlGaN)沉積物殘、少量的碳氫化合物(hydr〇carb〇n)沉 積物殘餘等。 在運用裝置10薄膜生長後’裝置1〇能夠直接利用反應腔U實現 原位清潔（in-situ cleaning)，也就是說，該清潔方式不用如現有技 術那樣需要打開反應腔’而是直接在反應腔内部18形成清潔氣體的等 離子體P，從而與反應腔内部18積聚的沉積物反應，生成氣態的副產 品並被排氣裝置16抽離反應腔内部μ。 如圖1所示，作為實現本發明方法的裝置的一種實施方式，裝置 10包括反應腔11，反應腔U包括頂部15、側壁12和腔底13。側壁 12包括金屬材料部分i2a和由電介質材料組成的電介質部分121^基 片基座17位於所述反應腔内部18，一片或多片基片w位於所述基片 基座17上並可以在反應腔用於薄膜生長時於其表面上沉積所述第瓜 族元素和第v族元素化合物。反應腔u還包括一電感線圈24，其環 繞在所述側壁12的電介質部分12b的外側。一射頻供應源2()通過一 射頻匹配裝置22與所述f祕圈24相連接，驗向反應腔内部18 提供射頻功率。—清潔氣體源4Gb與所述反應腔11相連接，用於向所 述反應腔内部18提供清潔氣體，所述清潔氣體在所述反應腔内部18 受所述射頻功率激勵而形成等離子體P，用於清潔所述反應腔内的第 m族元素和第v族元素化合物沉積物積聚。 根據本發明的發明精神和實質，本發明提供的一種第羾族元素和 201234473 第v族元素化合物薄膜生長反應腔的清潔方法，包括以下步驟： 反應腔清潔步驟’包括向所述反應腔内通入清潔氣體，在所述反 應腔内形成該清潔氣體的等離子體，維持所述清潔氣體的等離子體一 第一時間段，以清除所述反應腔内部的沉積物積聚； 反應腔狀態恢復步驟，包括向所述反應腔内通入包含第羾族元素 和第V族元素的反應氣體，並在所述反應腔内作用一第二時間段，以 在所述反應腔内部的表面上形成第瓜族元素和第v族元素化合物的塗 層。 可選擇地，在實施所述反應腔清潔步驟之前，還包括將反應腔内 的基片從反應腔内移出的步驟。 應當理解，本實施本發明所述反應腔清潔步驟時，原先位於反應 腔内的用於放置基片的支撑座可以被-起清潔；或者，利用本發明 的方法和裝置，也可以將其他反應腔内被污染的支撐座放入本發明 的反應腔内，利用本發明的清潔方法對其清潔，清潔成功後，再將 其從反應腔内取出。 所述清潔氣體包括含Η或含齒族元素的氣體。 優選地，所述清潔氣體包括含Η或含ci或含f或含βγ的氣體。 作為一種實施方式’前述含Η的氣體包括：Η2、肊卜NH3、HBr、 HI、CH4、CHF3、CH2F2中的一種或至少兩種混合氣體。 作為一種實施方式，刖述含C1的氣體可以為：hci、¢12、C1F、 C1F3、C1F5、BC13、SiC14中的一種或至少兩種混合氣體。 作為一種貫施方式，刖述含F的氣體可以為：qf、c1F3、CC12F2、 C1F5、NF3、SF6、CF4、C2F6、C3F8、C4F6、C4F8、CHF3、CH2F2、NF3 中的一種或至少兩種混合氣體。 前述反應腔清潔步驟是在等離子體作用的環境下進行的。該等離 子體的形成可以在如圖1所示的裝置_形成，該裝置1Q是通過電感 輕合的方式械等離子_。在_裝置1Q清潔反触_沉積物積 聚時’基0已經從反應腔内部的基片基座17上取走（圖中以虛線表 201234473 示基片w)。實施清潔時，先向反應腔内部18通入清潔氣體娜，優選 地，所述清織體的成份為包括含H或含C1 <含F的氣體。射頻功率 源20經過與其相連接的射頻匹配裝置22肖電感線圈24施加射雜 量。射頻能量通過反應腔側壁12的電介質部分12b被耦合至反應腔内 部18，並在反應腔内部18形成感應電場。清潔氣體4〇b在感應電場 的作用下械轉子體P，、轉所述赫㈣的轉子體p _段時間 T1 ’該清潔氣體備的等離子體p和反應腔内的沉積物積聚進行反應， 使之變成域態的副產品’再被反應腔下方的排氣裝置16抽離反應腔 11以達到清除所述沉積物積聚的目的。所述時間段T1可以根據實際 工藝的需要人為a史疋或調整，比如，5秒或1〇秒或更長時間。可選擇 地，在清潔反應腔時可以保持所述反應腔内的壓力大約在1〇〇mT〇rr 至1 OTorr之間。 本發明所提供的方法還可以適用於本申請人申請的申請號為： 201020599487.7 ’申請日為：2010年11月9日，專利名稱為：“一 種原位清潔第皿族元素和第V族元素化合物沉積反應腔的裝置，，的專 利中所公開的其他的裝置。 該等離子體的形成也可以適用於本申請人申請的申請號為： 201020600531.1，申請日為：2010年11月9日，專利名稱為：“一 種原位清潔第皿族元素和第V族元素化合物沉積反應腔的裝置，，的專 利中所公開的各種裝置。這些裝置是通過電容耗合的方式產生等離子 體的。 如前所述，在對反應腔進行上述反應腔清潔步驟後，反應腔内會 集聚或在反應腔表面吸附一些清潔氣體殘餘或清潔過程中產生的反應 副產物，這些清潔氣體殘餘（如，吸附性很強的C12)或反應副產物 的存在，會對下一次薄膜生長工藝產生不利影響，導致生產出來的薄 膜均一性不穩定或產生瑕疵。因而，本發明提供了後續的反應腔狀態 恢復步驟來克服這種問題。 作為一種實施方式，該反應腔狀態恢復步驟包括向反應腔内1〇 11 201234473 通入包含第m族元素和第V族元素的反應氣體40a，並在所述反應腔 11内作用一第二時間段（例如，5至10秒），以在所述反應腔内部的 表面上形成第皿族元素和第V族元素化合物的塗層。該塗層會覆蓋在 反應腔内的各種表面上’從而將在先被清潔過的吸附有清潔氣體殘餘 或反應副產物的表面覆蓋住，使它們不會在後續的薄膜生長過程中釋 放出來影響後續工藝的薄膜生長品質，由於該塗層的材料與接下來要 進行的薄膜生長工藝中要生產的薄膜一樣，因而也不會對後續的薄膜 生長過程產生不利的影響。 應當理解，前述反應腔狀態恢復步驟也可以在等離子體的作用下 實現。亦即，在所述反應腔11内以前述的各種方式形成該第诅族元素 的反應氣體或/和第V族元素的反應氣體40a的等離子體，維持所述等 離子體至所述一特定時間段，以等離子體輔助的方式形成第皿族元素 和第V族元素化合物的塗層。 前述反應腔狀態恢復步驟也可以在熱工藝的環境下實現。亦即， 該步驟包括加熱所述反應腔11内部至一特定的溫度，如：5〇〇它至14〇〇 C之間的某一溫度，使所述第皿族元素和第v族元素的反應氣體在熱 的作用下化學反應’從而沉積形成第皿族元素和第V族元素化合物的 塗層。 作為一種優選的實施方式，前述第皿族元素和第V族元素的反應 氣體40a反應所形成的塗層包括GaN。 根據本發明的精神和實質，本發明還提供一種第羾族元素和第v 族元素化合物薄膜生長反應腔的清潔方法，包括以下步驟： 反應腔清潔步驟，包括向所述反應腔内通入清潔氣體，在所述反 應腔内形成該清潔氣體的等離子體，維持所述清潔氣體的等離子體一 第一時間段，以清除所述反應腔内部的沉積物積聚； 反應腔狀態恢復步驟，包括向所述反應腔内通入反應腔狀態恢復 氣體，所述反應腔狀態恢復氣體與反應腔内殘餘的清潔氣體反應，將 反應腔内殘餘的清潔氣體反應去除。 12 201234473 可選擇地，在實施所述反應腔清潔步驟之前，還包括將反應腔内 .的基片從反應腔内移出的步驟。 同樣地，應當理解，本實施本發明所述反應腔清潔步驟時，原先 位於反應腔内的用於放置基片的支撐座可以被一起清潔；或者，利 用本發明的方法和裝置，也可以將其他反應腔内被污染的支撐座放 入本發明的反應腔内，利用本發明的清潔方法對其清潔，清潔成功 後’再將其從反應腔内取出。 其中，所述反應腔清潔步驟和所述清潔氣體與前述圖1裝置中所 涉及的反應腔清潔步驟和清潔氣體相同，在此不再贅敘。 其中，所述反應腔狀態恢復氣體是能夠與反應腔内殘餘的清潔氣 體（如：C12)發生反應並將它們去除的氣體。優選的，所述反應腔狀 態恢復氟體包括H2、CH4、N2、NH3、Ar、He中的一種或至少兩種混合 氣體。 類似地，所述反應腔狀態恢復步驟可以在等離子體作用下進行， 例如，該步驟包括在所述反應腔内形成該反應腔狀態恢復氣體的等離 子體，維持所述等離子體至一第二時間段（例如，5—1〇秒或更長）， 使該反應腔狀態恢復氣體的等離子體與與反應腔内殘餘的清潔氣體發 生反應，所生成的副產品氣體被排出反應腔。為了提高等離子體的轟 擊效果’所述反應腔狀態恢復氣體還可以包括Ar或He。 類似地’所述反應腔狀態恢復步驟也可以在熱工藝處理的環境下 進行’例如’該步驟包括加熱所述反應腔内部至5〇〇。(：至14〇(rc或3〇〇 °(：至1400°C，使所述反應腔狀態恢復氣體在熱的作用下與反應腔内殘 餘的清潔氣體發生反應，從而將其從反應腔内清除。 為了達到更佳的反應腔恢復狀態，優選地，在實施前述反應腔狀 態恢復步驟之後’還可以包括向所述反應腔内通入包含第皿族元素和 第V族元素的反應氣體，所述反應氣體在所述反應腔内在等離子體作 .用下或在熱化學氣相沉積的環境下進行反應，以在所述反應腔内部的 表面上形成第皿族元素和第V族元素化合物的塗層。同樣地，該塗層 13 201234473 會覆蓋在反應腔内的各種表面上，減少由於前述反應腔狀態恢復氣體 (如’前述的H2、CH4、N2、NH3、Ar、He)在反應腔内的存在對後續 的薄膜生長工藝產生的不良影響。 應當理解的是，利用本發明的方法，可以清潔各種第瓜族元素和 第V族元素化合物薄膜生長反應腔内的沉積物積聚。這些各種沉積物 積聚包括第m族元素和第v族元素化合物。所述第皿族元素選自鎵、 銦、鎵和銦的組合、鎵和鋁的組合、銦和鋁的組合、以及鎵和銦和鋁 的組合。所述第V族元素選自氮、磷、砷、銻、以及前述元素的至少 兩種元素的組合。例如，本專利中所提及的沉積物積聚可以是如下所 列化合物中的一種或至少兩種的混合物：GaN，InGaN，A1GaN, GaAs，One or at least two mixed gases of SiCU, CHC13, and CH3C1, wherein the F-containing gas includes: ciF, C1F3, CC12F2, C1F5, NF3, SF6, CF4, C2F6, C3F8, C4F6, C4F8, CHF3, CH2F2 One or at least two mixed gases in NF3. Wherein the reaction chamber state recovery gas comprises one of H2, CH4, N2, NH3, Ar, He or at least two mixed gases. Wherein the reaction chamber state recovery step includes forming a plasma of the reaction chamber state recovery gas in the reaction chamber to maintain the plasma for a second period of time. Wherein the reaction chamber state recovery step comprises heating the interior of the reaction chamber to between 3 ° C and 1400 ° C to cause the reaction chamber state to recover a chemical reaction of the gas under the action of heat. Wherein the deposition of the deposit comprises a group member element and a group V element compound. Wherein the guar element is selected from the group consisting of gallium, indium, a combination of gallium and indium, a combination of gallium and aluminum, a combination of indium and aluminum, and a combination of gallium and indium and aluminum. Wherein the Group V element is selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, and a combination of at least two of the foregoing elements. [Embodiment] Hereinafter, the present invention will be specifically described with reference to the accompanying drawings. The present invention provides a method for rapidly and efficiently removing deposits in a growth reaction chamber of a film of a samarium element and a group v element. The use of this method to clean the growth reaction chamber not only ensures the quality and consistency of each cleaning, but also does not adversely affect the subsequent thin film growth process of the Group III element and the Group V element compound. As shown in FIG. 1 , FIG. 1 is a device 1G for implementing the clearing method of the present invention according to an embodiment of the present invention, and a device for growing a group of angi elements and a group V element compound is also formed. a part, that is, the reaction chamber 11 of the device 1 is also a fine growth reaction chamber of the m-th element and the v-th element compound or a part thereof for growing the third dish in the reaction chamber 18 of the device And a compound film of the Group ** element. Specifically, the apparatus 10 of Figure 1 includes a reaction chamber u that includes a grounded side wall 201234473 12 and a cavity bottom 13. The interior 18 of the reaction chamber 11 is provided with one or more substrate susceptors 17 β. During the MOCVD film growth process, one or more substrates w may be placed directly on the substrate pedestal 17, or The substrate w can also be placed on a substrate (not shown) and then placed on the substrate substrate 17 to grow the third element and the surface of the substrate w. A film of a group V element compound. Alternatively, the substrate pedestal 17 can be rotated by a connecting mechanism and a driving mechanism (not shown) disposed underneath to drive the substrate W to rotate to enhance the uniformity of the process results. Of course, the substrate W can also be rotated in other known or future developed rotations. In order to introduce a source of reactive gas or a cleaning gas into the reaction chamber 11, as an embodiment, in the apparatus 10 shown in Fig. 1, a gas distribution showerhead 30 may be disposed on the top portion 15. For example, a possible embodiment is to provide an interconnected gas diffusion space 32 and a plurality of gas distribution holes 34 connected thereto, the gas diffusion space 32 being connected to the gas transmission pipe 42, and the gas transmission pipe 42 and the gas source 4 (including: a reactive gas source 40a or a cleaning gas source 4〇b) is connected. The gas source 4? (40a, 40b) is input to the inside of the reaction chamber 18 through the gas distribution hole 34. Various conventional or future possible temperature heating and control devices (not shown) may be provided at the interior of, or below, or adjacent to the substrate base 17, so that the pedestal may be maintained during the process. The substrate temperature above 17 is controlled between about 5 〇〇〇c and about 14 〇〇〇c. The interior 18 of the reaction chamber 11 is maintained as a vacuum processing environment by means of an exhaust device 16 disposed thereunder. In the film growth process, the reaction chamber 11 is performed by thermal film processing or other plasma-assisted method. Illustration 'The substrate base of the inside of the reaction chamber 18 when the thermal film growth process is employed 17 and the substrate W will be heated to between about 500 ° C and about 1400 X:, the source of the reactive gas used in the film growth process will pass from the appropriate position of the reaction chamber 11 into the interior 18 of the reaction chamber, and the source of the reaction gas is hot. A chemical reaction is applied to deposit a thin film or epitaxially grown film on the substrate W, and the substrate susceptor 17 is kept rotated during film growth to improve the uniformity of film growth. After the film growth process of the reaction chamber 11 of the device 10 is operated for a period of time, a certain amount of deposits are deposited on various reaction chamber components of the portion 201234473 in the reaction chamber, and it is necessary to clean the interior of the reaction chamber. . As mentioned above, during the M0CVD process, GaN films or other reaction products (hereinafter collectively referred to as: deposit accumulation in the reaction chamber) will not only grow or deposit on the substrate, but also grow or deposit in the reaction chamber. On the component, for example, on the inner side wall of the reaction chamber u, on the substrate base 17, and the like. Since the MOCVI) process involves deposition of many layers and deposition for a long time, these deposit accumulations usually include the mth element and the vth element compound. For example, it may be a film: a metal compound (for example, GaN, InN, AIN, InGaN, AlGaN) deposit residue, a small amount of hydrocarbon (hydr〇carb〇n) deposit residue, and the like. After the film 10 is grown by the device 10, the device 1 can directly use the reaction chamber U to achieve in-situ cleaning, that is, the cleaning method does not require opening the reaction chamber as in the prior art, but directly in the reaction. The interior 18 of the chamber forms a plasma P of cleaning gas that reacts with deposits accumulated within the interior 18 of the reaction chamber to produce gaseous by-products that are drawn away from the interior of the reaction chamber by the exhaust device 16. As shown in Fig. 1, as an embodiment of a device for carrying out the method of the invention, the device 10 comprises a reaction chamber 11 comprising a top portion 15, a side wall 12 and a cavity bottom 13. The side wall 12 includes a metal material portion i2a and a dielectric portion 121 composed of a dielectric material. The substrate base 17 is located inside the reaction chamber 18, and one or more substrates w are located on the substrate base 17 and can be reacted The cavity is used to deposit the first gull element and the v-th element compound on the surface thereof during film growth. The reaction chamber u further includes an inductive coil 24 that is wound around the outer side of the dielectric portion 12b of the side wall 12. An RF supply source 2() is coupled to the F-clip 24 via a RF matching device 22, which provides RF power to the interior 18 of the reaction chamber. a cleaning gas source 4Gb connected to the reaction chamber 11 for supplying a cleaning gas to the interior 18 of the reaction chamber, the cleaning gas being excited by the RF power inside the reaction chamber 18 to form a plasma P, It is used to clean deposits of the mth element and the vth element compound in the reaction chamber. According to the spirit and essence of the present invention, the present invention provides a method for cleaning a film growth reaction chamber of a steroid element and a 201234473 group v element compound, comprising the steps of: the reaction chamber cleaning step 'including communicating into the reaction chamber Forming a cleaning gas, forming a plasma of the cleaning gas in the reaction chamber, maintaining a plasma of the cleaning gas for a first period of time to remove deposit accumulation inside the reaction chamber; a reaction chamber state recovery step, Including introducing a reaction gas containing a steroid element and a group V element into the reaction chamber, and applying a second period of time in the reaction chamber to form a first melon on the surface inside the reaction chamber. A coating of a group element and a group v element compound. Optionally, prior to performing the reaction chamber cleaning step, the step of removing the substrate within the reaction chamber from the reaction chamber is further included. It should be understood that, in the reaction chamber cleaning step of the present invention, the support for placing the substrate originally located in the reaction chamber may be cleaned; or, other methods may be used by the method and apparatus of the present invention. The contaminated support in the chamber is placed in the reaction chamber of the present invention, cleaned by the cleaning method of the present invention, and after cleaning successfully, it is taken out of the reaction chamber. The cleaning gas includes a gas containing cerium or a tooth-containing element. Preferably, the cleaning gas comprises a gas containing or containing ci or f or containing β. As an embodiment, the foregoing ruthenium-containing gas includes one or a mixture of at least two of Η2, NHNH3, HBr, HI, CH4, CHF3, and CH2F2. As an embodiment, the gas containing C1 may be one of hci, ¢12, C1F, C1F3, C1F5, BC13, SiC14 or at least two mixed gases. As a method of implementation, the gas containing F may be: one or a mixture of at least two of qf, c1F3, CC12F2, C1F5, NF3, SF6, CF4, C2F6, C3F8, C4F6, C4F8, CHF3, CH2F2, NF3. gas. The aforementioned reaction chamber cleaning step is carried out under the action of a plasma. The formation of the plasma can be formed in a device as shown in Fig. 1, which is a mechanical plasma _ by means of an inductive light coupling. The substrate 0 has been removed from the substrate susceptor 17 inside the reaction chamber when the device 1Q cleans the anti-touch_sediment accumulation (the substrate w is shown by the dotted line 201234473). When the cleaning is carried out, the cleaning gas Na is first introduced into the interior 18 of the reaction chamber. Preferably, the composition of the clearing fabric comprises a gas containing H or containing C1 < F. The RF power source 20 applies a spurious amount to the oscillating coil 24 via the RF matching device 22 to which it is connected. RF energy is coupled to the interior 18 of the reaction chamber through the dielectric portion 12b of the sidewall 12 of the reaction chamber, and an induced electric field is formed within the interior 18 of the reaction chamber. The cleaning gas 4〇b is under the action of the induced electric field, and the rotor body P is rotated, and the plasma p of the clean gas is accumulated and the deposit in the reaction chamber is accumulated to react. The by-product which makes it into a domain state is then pulled away from the reaction chamber 11 by the exhaust device 16 below the reaction chamber to achieve the purpose of clearing the deposit accumulation. The time period T1 can be artificially adjusted or adjusted according to the needs of the actual process, for example, 5 seconds or 1 second or longer. Alternatively, the pressure in the reaction chamber can be maintained between about 1 〇〇mT rr to 1 OTorr while cleaning the reaction chamber. The method provided by the present invention is also applicable to the applicant's application number: 201020599487.7 'The application date is: November 9, 2010, and the patent name is: "An in-situ cleaning of the dish element and the group V element. The apparatus for depositing a reaction chamber of a compound, and other apparatus disclosed in the patent. The formation of the plasma is also applicable to the application number of the applicant: 201020600531.1, the application date is: November 9, 2010, the patent The designation is as follows: "A device for in-situ cleaning of a dish member element and a group V element compound deposition reaction chamber," the various devices disclosed in the patent. These devices generate plasma by capacitive coupling. As described above, after the reaction chamber cleaning step is performed on the reaction chamber, the reaction chamber will accumulate or adsorb some residual gas residues on the surface of the reaction chamber or reaction by-products generated during the cleaning process, such as adsorption (eg, adsorption). The presence of very strong C12) or reaction by-products can adversely affect the next film growth process, resulting in uniformity of the film produced or spasm. Thus, the present invention provides a subsequent reaction chamber state recovery step to overcome this problem. As an embodiment, the reaction chamber state recovery step includes: introducing a reaction gas 40a containing a group m element and a group V element into the reaction chamber 1〇11 201234473, and applying a second time in the reaction chamber 11 A segment (for example, 5 to 10 seconds) to form a coating of the group member element and the group V element compound on the surface inside the reaction chamber. The coating will cover the various surfaces in the reaction chamber' to cover the previously cleaned surface of the cleaning gas residue or reaction by-products so that they do not release during subsequent film growth. The film growth quality of the subsequent process, since the material of the coating is the same as that of the film to be produced in the subsequent film growth process, does not adversely affect the subsequent film growth process. It should be understood that the aforementioned reaction chamber state recovery step can also be carried out under the action of a plasma. That is, a plasma of the reaction gas of the steroid element or/and the reaction gas 40a of the group V element is formed in the reaction chamber 11 in various manners as described above, and the plasma is maintained to the specific time. In a segment, a coating of a group member element and a group V element compound is formed in a plasma-assisted manner. The aforementioned reaction chamber state recovery step can also be implemented in a thermal process environment. That is, the step includes heating the inside of the reaction chamber 11 to a specific temperature, such as a temperature between 5 〇〇 and 14 〇〇C, to make the retort element and the v-th element The reaction gas chemically reacts under the action of heat to deposit a coating layer forming a group member element and a group V element compound. As a preferred embodiment, the coating formed by the reaction of the reaction gas 40a of the aforementioned group member element and the group V element includes GaN. According to the spirit and essence of the present invention, the present invention also provides a method for cleaning a film growth reaction chamber of a steroid element and a group v element compound, comprising the steps of: a reaction chamber cleaning step comprising: introducing cleaning into the reaction chamber a gas, a plasma of the cleaning gas is formed in the reaction chamber, and a plasma of the cleaning gas is maintained for a first period of time to remove deposit accumulation inside the reaction chamber; a reaction chamber state recovery step includes The reaction chamber is introduced into the reaction chamber state to recover the gas, and the reaction chamber state recovery gas reacts with the residual cleaning gas in the reaction chamber to remove the residual cleaning gas in the reaction chamber. 12 201234473 Optionally, prior to performing the reaction chamber cleaning step, the step of removing the substrate within the reaction chamber from the reaction chamber is further included. Similarly, it should be understood that, in the reaction chamber cleaning step of the present invention, the support for placing the substrate originally located in the reaction chamber may be cleaned together; or, by using the method and apparatus of the present invention, The contaminated support in the other reaction chamber is placed in the reaction chamber of the present invention, cleaned by the cleaning method of the present invention, and then removed from the reaction chamber after successful cleaning. Wherein, the reaction chamber cleaning step and the cleaning gas are the same as the reaction chamber cleaning step and the cleaning gas involved in the foregoing apparatus of Fig. 1, and will not be described herein. Wherein the reaction chamber state recovery gas is a gas capable of reacting with a residual cleaning gas (e.g., C12) in the reaction chamber and removing them. Preferably, the reaction chamber state recovery fluorocarbon comprises one or at least two mixed gases of H2, CH4, N2, NH3, Ar, He. Similarly, the reaction chamber state recovery step can be performed under the action of a plasma. For example, the step includes forming a plasma of the reaction chamber state recovery gas in the reaction chamber, and maintaining the plasma for a second time. The segment (for example, 5-1 sec or longer) causes the plasma of the reaction chamber state recovery gas to react with the residual cleaning gas in the reaction chamber, and the generated by-product gas is discharged out of the reaction chamber. In order to increase the bombardment effect of the plasma, the reaction chamber state recovery gas may further include Ar or He. Similarly, the reaction chamber state recovery step can also be performed in a thermal process environment. For example, the step includes heating the interior of the reaction chamber to 5 Torr. (: to 14 〇 (rc or 3 〇〇 ° (: to 1400 ° C, so that the reaction chamber state recovery gas reacts with the residual cleaning gas in the reaction chamber under the action of heat, thereby taking it out of the reaction chamber In order to achieve a better reaction chamber recovery state, preferably, after performing the foregoing reaction chamber state recovery step, 'may also include introducing a reaction gas containing a group member element and a group V element into the reaction chamber, The reaction gas is reacted in the reaction chamber under the environment of a plasma or in a thermal chemical vapor deposition to form a group member element and a group V element compound on the surface inside the reaction chamber. Similarly, the coating 13 201234473 will cover various surfaces in the reaction chamber, reducing the recovery of gases due to the aforementioned reaction chamber state (such as 'the aforementioned H2, CH4, N2, NH3, Ar, He) in the reaction. The presence of the cavity has an adverse effect on the subsequent film growth process. It should be understood that the method of the present invention can be used to clean various film growth reaction chambers of the gull element and the group V element compound. The accumulation of these deposits includes a group m element and a group v element compound. The group of elements is selected from the group consisting of gallium, indium, a combination of gallium and indium, a combination of gallium and aluminum, a combination of indium and aluminum. And a combination of gallium and indium and aluminum. The Group V element is selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, and a combination of at least two of the foregoing elements. For example, the deposit accumulation mentioned in the patent may be Is a mixture of one or a mixture of at least two of the following: GaN, InGaN, A1GaN, GaAs,
InP，GaAsP，InGaAs、AlSb、AIN、A1P、BN、BP、BAs、GaSb、GaP、InP, GaAsP, InGaAs, AlSb, AIN, A1P, BN, BP, BAs, GaSb, GaP,
InSb、InAs、InN、InP、AlGaAs、InGaP、AlInAs、AllnSb、GaAsN、 GaAsSb、GalnNAsSb 等》 應當理解的是，本專利中所提及的‘‘清潔氣體”、“反應氣體” 不限於指只包括-種氣體’也包括由多種氣體組成的混合氣體。 乡示上所述，本發明提供了一種有效地清除第诅族元素和第V族元 素化合物_生長反應㈣的沉積物積料方法。絲置同時也構成 第m族το素和第v族元素化合物薄膜生長裝置的_部分。在化合物薄 膜薄膜生長卫藝進行到一定時間後，反應腔内部會累積—定量的沉積 物積聚’利財發明提供的裝置可以在無需打開反應麟情況下有效 也對反應腔内貫現原位清潔（in_situ cleaning)，並能保證反應腔 回復至準備後續細生長的狀態，轉因反舰清賴後續薄膜生長 造成不利的影響。本發_清潔方法簡單、有效，能大大地節省生產 者的成本和提高整個·VD生絲置的有效工藝_ (uptime)。 以上對本發明的各個實施例進行了詳細說明。需要說明的是，上 述貫施例僅疋示範性的，而非對本發明的限制。任何不背離本發明的 精神的技術方案均應落人本發明祕護細之内^此外，不應將權利 要求中的任何附圖標記視為限制所涉及的權利要求；“包括” 一詞不 201234473 排除其他權利要求或說明書中未列出的裝置或步驟；“第一”、“第 Γΐ ί詞語制來表示名稱，而並不表示任何特㈣順序。 【圖式簡單說明】 圖1為根據本發明-種實施方式所提供的用以實現本發明的清潔 方法的製置10。 【主要元件符號說明】 1〇裝置 側壁 12b電介質部分 15頂部 17基片基座 20射頻供應源 24電感線圈 32氣體擴散空間 40氣體源 40b清潔氣體源 W基片 11反應腔 12a金屬材料部分 13腔底 16排氣裝置 18反應腔内部 22射頻匹配裝置 30氣體分佈裝置 34氣體分佈孔 40a反應氣體源 42氣體傳輸管道 P等離子體InSb, InAs, InN, InP, AlGaAs, InGaP, AlInAs, AllnSb, GaAsN, GaAsSb, GalnNAsSb, etc. It should be understood that the terms 'cleaning gas' and 'reactive gas' as used in this patent are not limited to only including - The gas 'also includes a mixed gas composed of a plurality of gases. As described above, the present invention provides a method for depositing deposits which effectively removes the steroid element and the group V element compound_growth reaction (4). At the same time, it also constitutes the _ part of the m-th sauer and the v-th element compound thin film growth device. After the growth of the compound film film for a certain period of time, the inside of the reaction chamber accumulates - quantitative sediment accumulation The provided device can be effective in the in-situ cleaning of the reaction chamber without opening the reaction column, and can ensure that the reaction chamber returns to the state of preparing for subsequent fine growth, and the anti-ship clearing subsequent film growth Causes adverse effects. This method _ cleaning method is simple and effective, can greatly save the cost of the producer and improve the effective process of the entire VD raw silk set _ (upti The embodiments of the present invention have been described in detail above. It should be noted that the above-described embodiments are merely exemplary and not limiting of the present invention. Any technical solution that does not depart from the spirit of the present invention should fall. In addition, any reference signs in the claims should not be construed as limiting the claim; the term "comprising" does not mean 201234473. Excludes other claims or devices not listed in the specification. Or step; "first", "third" word system to indicate the name, and does not mean any special (four) order. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a fabrication 10 for implementing a cleaning method of the present invention in accordance with an embodiment of the present invention. [Main component symbol description] 1 〇 device sidewall 12b dielectric portion 15 top 17 substrate susceptor 20 RF supply source 24 Inductor coil 32 gas diffusion space 40 gas source 40b cleaning gas source W substrate 11 reaction chamber 12a metal material portion 13 cavity Bottom 16 exhaust device 18 reaction chamber interior 22 RF matching device 30 gas distribution device 34 gas distribution hole 40a reaction gas source 42 gas transmission pipe P plasma