201222876 六、發明說明： 【發明所屬之技術領域】 本發明係”光電元件，特職於— 構件以產生磁場之光電元件。 【先前技術】 發光二極體（light-emitting diode, LED)是—種由半 導體材料製作而成的發光元件。由於發光二極體屬於冷發 光具有耗電量低、元件哥命長、反應速度快等優點，再 加上體積小容易製成極小或陣列式元件的特性，因此近年 來隨著技料斷㈣步，其應關_蓋 品的指示燈、液晶㈣置的背先源乃至交通== 用指示燈。 圖1為一種習知之發光二極體元们之側視示意圖。 發光二極體元件1包含—基板11、- N型半導體層12、 一多重量子井層u、-P型半導體層14、—透光導電層 15、-第-電極16及一第二電極17。在發光二極體元件 1中，上述元件係由基板U往上一層一層堆疊而成，並沿 Y軸方向成長。而多重量子井層13作為主要發光區往往僅· 有數十或數百奈米的厚度。當電流從第二電極17 (正極） 流向第-電極16(負極）時，會具有沿χ、γ、ζ#方向. 2度分量（圖1僅示Vx、Vy之速度分量），且載子會很 1通過主要發光區’而無法長時間停留在主要發光區做 效的復合並產生光子，因而造成發光二極體元件工之發 201222876 光效能不佳。 因此，如何提供一種光電元件藉由改變載子在光電元 件中的運動路徑而提升光電元件之發光效能或發電效 能，已成為重要課題之一。 【發明内容】 有鑑於上述課題，本發明之目的為提供一種光電元件 藉由改變載子在光電元件中的運動路徑而提升光電元件 之發光效能。 為達上述目的，依據本發明之一種光電元件包含一光 電疊層以及一磁性構件。磁性構件設置於光電疊層内或鄰 設於光電疊層並產生一磁場。 在一實施例中，光電元件可為一發光二極體元件，藉 由磁性構件所產生之磁場，可使發光二極體元件提升發光 效能。 在一實施例中，磁性構件可位於光電疊層之下或之 上。如此皆可產生通過光電疊層之磁場以延長載子在光電 疊層内之運動路徑。 在一實施例中，光電疊層具有一基板及一遙晶層，蟲 晶層設置於基板之上，光電疊層更具有一電流擴散層設置 於磊晶層之上，磁性構件埋設於電流擴散層内，且磁性構 件產生通過光電疊層之磁場以延長載子在光電疊層内之 運動路徑。 在一實施例中，光電疊層具有一基板及一磊晶層，磊 201222876 晶層設置於基板之上，磊晶層具有至少一凹槽以使該磊晶 層形成一平台，磁性構件位於磊晶層之凹槽内。例如磁性 構件可包含兩磁性層，該等磁性層分別位於磊晶層之平台 之兩侧並緊鄰磊晶層之一多重量子井層，以產生穿過光電 疊層之磁場，以延長載子在光電疊層内之運動路徑。此 外，在此實施例中，磁性構件之高度可不超過平台之高度 以避免造成遮光。 在一實施例中，光電疊層具有一基板及一遙晶層，蠢 • 晶層設置於基板之上，光電疊層更具有一第一電極及一第 二電極，第一電極設置於磊晶層之一凹槽内，第二電極設 置於磊晶層之上，磁性構件位於第二電極與磊晶層之間， 以產生穿過光電疊層之磁場，以延長載子在光電疊層内之 運動路徑。 在一實施例中，磁性構件與第二電極係至少部分重 疊，藉由使磁性構件與第二電極具有重疊之部分，可減少 兩者所造成之遮光量。 ^ 在一實施例中，磁性構件包含鐵、鈷、鎳、錳、或其 他磁性材質，另外，磁性構件更可包含高反射材質，以作 為反射層之用。 在一實施例中，磁性構件可呈長條狀、複數點狀、或 不連續分佈狀，藉由不同形狀或分佈之磁性構件，可產生 不同強度或方向之電場，以對載子產生不同的延長效應， 進而增加磁性構件的應用性。 為達上述目的，本發明之一種光電元件包含一光電疊 201222876 層以及一磁性構件。光電疊層具有一基板及一蟲晶層，蟲 晶層設置於基板之上，磊晶層具有至少一凹槽以使磊晶層 形成一平台。磁性構件位於蟲晶層之凹槽，產生一磁場通 過光電疊層。 為達上述目的，本發明之一種光電元件包含一光電疊 層以及一磁性構件。光電疊層具有一基板及一遙晶層，遙 晶層設置於基板之上，光電疊層更具有一第一電極及一第 二電極，第一電極設置於磊晶層之一凹槽内，第二電極設 置於磊晶層之上。磁性構件設置於光電疊層内，並位於第 二電極與磊晶層之間，產生一磁場通過光電疊層。 承上所述，本發明之光電元件藉由磁性構件的設置， 磁性構件可產生通過光電疊層之磁場，進而使光電疊層内 之運動中的載子受到霍爾效應（Hall effect)而改變其運動 路徑而提升光電效能。例如對發光二極體而言，利用霍爾 效應使光電疊層之運動載子產生作用，改變其運動方向， 進而延長載子的運動路徑而達到電流擴散目的、或增加載 子停留在主要發光區的時間而增加載子復合發光的機 會，而提升發光效能。 【實施方式】 以下將參照相關圖式，說明依本發明較佳實施例之一 種光電元件，其中相同的元件將以相同的參照符號加以說 明。 在說明本發明之前，先以圖2簡述霍爾效應（Hall 201222876 effect)。霍爾效應是指當固 … -個磁場内’導體内之·、通過’且放置在 邊，繼而產生電壓，除導體^子受到洛倫兹力而偏向一 π θ “導體外，半導體也能產生霍爾效應， =導體之霍爾效應要強於導體。如圖2所示，一載子 之運^^上^度^動’另有—磁場^在於載子 為正雷1 ’其磁力方向為指出紙面之ζ軸方向。當載子 :I何日受到磁場6的作用，按照右手定則，正電荷 t朝者錄於速度V與磁場Β的方向彎曲，即向下(¥軸 向）弓曲。同理，若载子為負電荷，則受到磁場Β的作 而^上幫曲，如此載子之運動路徑即被改變。 /請參照圖3所示’本發明較佳實施例之—種光電元件 一係包3光電豐層2G及-磁性構件3()。本發明之光電 兀件可例如為-發光二極體元件（light-emitting diode, LED)。光電疊層20包含-基板2卜一磊晶層22、一第一 電極23以及—第二電極24。 Φ 板21之材可例如包含藍寳石（sapphire )、碳化 石夕（SlC) '破化鎵（GaP)、砷化鎵（GaAs)或矽（Si)， 於此係以藍寶石為例。 、猫晶層22設置於基板21上。磊晶層22可為任意之半 導體層，例如包含一第一半導體層221及一第二半導體層 22其中苐一半導體層221與第二半導體層222具 有不同之電性。在本實施例中，第一半導體層22 i 為P型’第二半導體層為N型。且可依據發光二極體 之功此，例如藍光二極體、綠光二極體、紅光二極體等等， 201222876 而變化遙晶層22之材質。遙晶層22之材質可例如選自氮 化鎵（GaN )系列之材料’例如包含氮化銦鎵（in〇aN)、 氮化鋁鎵（AlGaN)或磷化鋁銦鎵（AlInGaP)系列等。另 外，蠢晶層22更可包含一多重量子井層（multiple quantum well，MQW) 223以產生所需之光，多重量子井層223夾 設於第一半導體層221與第二半導體層222之間。 而為了電性導通第二半導體層222,第一半導體層221 與多重量子井層223中的一部分利用例如微影蝕刻製程移 除而形成一凹槽224，用以露出部分的第二半導體層222 表面，第一電極23係設置於第二半導體層222所露出的 表面上，亦即第一電極23設置於凹槽224.内。 光電元件2可更包含一電流擴散層28 ’其係為一透光 導電層（transparent conductive layer，TCL) ’ 並設置於蟲 晶層22之上，用以使電流均勻擴散後通過第一半導體層 221，而後再通過多重量子井層223。本實施例之電流擴散 層28之材質可以例如為氧化銦錫（IT0)以避免遮光。第 二電極24設置於磊晶層22之上以及電流擴散層28上。 本發明之磁性構件可設置於光電疊層20内或鄰設於 光電疊層20並產生一通過光電疊層20之磁場。本實施例 之磁性構件30係為一磁性材料層並以鄰設於光電疊層20 為例’磁性構件30設置於光電疊層20之下。於此’光電 疊層20更包含一反射鏡25，而磁性構件30設置於反射鏡 25之下。磁性構件30之材質可例如包含鐵、鈷、鎳或錳， 磁性構件30更可包含高反射材質，例如鋁或銀，或者磁 201222876 性構件30可形成反射結構，藉此，光電疊層20可不需設 置反射鏡25。 磁性構件30可藉由蒸鍍或黏合而設置於光電疊層20 下方。在設置之後，可施加一強力磁場，使得磁性構件30 獲得一固定的磁性（其N極與S極如圖所示），於此磁性 構件30所造成的磁場可提供Y軸方向之磁力給光電疊層 20。當然，若磁性構件30本身之材質即帶有磁力可產生 磁場，則不需施加磁場之步驟。藉由通過光電疊層20之Y • 軸方向的磁場，可使光電疊層20之載子在X、Z軸方向之 速度分量受到霍爾效應而改變其運動路徑，例如是使載子 . 之運動變為螺旋狀，因而延長載子從第二電極24至第一 電極23之運動路徑，而達到電流擴散目的、或增加載子 停留在主要發光區的時間而增加載子復合發光的機會，而 提升發光效能。 除了上述位置之外，本發明之磁性構件可設置於光電 疊層之多種位置以產生通過光電疊層之磁場而使運動載 ^ 子受到霍爾效應而改變其運動路徑，以下舉例說明之。 請參照圖4所示，在本態樣之光電元件2a中，光電元 件2a係包含一光電疊層20及一磁性構件。光電元件2a 具有兩凹槽224，以使磊晶層（包含第一半導體層221、 第二半導體層222與多重量子井層223 )形成一平台（mesa) Μ，並露出部分的第二半導體層222表面。光電元件2a更 包含一鈍化層（passivation layer) 26，其係設置並覆蓋於 磊晶層、電流擴散層28、第一電極23及第二電極24之上， 201222876 並延至至該等凹槽224。 於此，磁性構件包含兩磁性層31、3 2，該等磁性層 31、32分別位於光電元件2a之凹槽224並位於平台Μ之 兩側。磁性層31、32亦鄰設於轰晶層22之多重量子井層 223之兩側，且緊鄰多重量子井層223。磁性層31、32可 例如藉由蒸鍍、微影及蝕刻製程而形成於凹槽224。 藉此，磁性層31、32產生穿過光電疊層20之磁場， 並可提供X軸方向之磁力給光電疊層20。藉由通過光電疊 層20之X軸方向的磁場，可使光電疊層20之載子在Υ、 Ζ軸方向之速度分量受到霍爾效應而改變其運動路徑，例 如是使載子之運動變為螺旋狀，因而延長載子從第二電極 24至第一電極23之運動路徑，而達到電流擴散目的、或 增加載子停留在主要發光區的時間而增加載子復合發光 的機會，而提升發光效能。 此外，在此實施態樣中，磁性構件之磁性層31、32 之高度可不超過平台Μ之高度以避免遮光。如圖4所示之 態樣係以磁性層31、32之高度與凹槽224之高度等高為 例。由於磁性構件鄰設於多重量子井層223，而多重量子 井層223為主要發光區，所以在設置條件下，磁力能夠對 於載子在主要發光區造成較強的影響，所以較強的磁力能 夠更有效的影響載子之運動路徑，增加載子復合發光的機 會，而提升發光效能。 請參照圖5所示，在本態樣之光電元件2b中，光電 元件2b係包含一光電疊層20及一磁性構件30。磁性構件 10 201222876 30係設置於光電疊層20中，位於第二電極24與磊晶層 22之間，於此，磁性構件30係埋設於電流擴散層28内， 且位於第二電極24之正下方，且磁性構件30與第二電極 24係至少部分重疊。由於磁性構件30與第二電極24通常 皆為遮光物質，藉由使磁性構件30與第二電極24至少部 分重疊，可以減少發光二極體所發出的光被遮住的面積， 以減少遮光發生。以圖5為例，磁性構件30係位於第二 電極24之正下方，且由第二電極24所完全覆蓋，所以磁 • 性構件30並不會造成額外的遮光效果。 磁性構件30可例如藉由蒸鍍、微影及蝕刻製程而形 成於磊晶層22上。藉此，磁性構件30產生穿過光電疊層 20之磁場，並可提供Y軸方向之磁力給光電疊層20。藉 由通過光電疊層20之Y軸方向的磁場，可使光電疊層20 之載子在X、Z軸方向之速度分量受到霍爾效應而改變其 運動路徑，例如是使載子之運動變為螺旋狀，因而延長載 子從第二電極24至第一電極23之運動路徑，而達到電流 擴散目的、或增加載子停留在主要發光區的時間而增加載 子復合發光的機會，而提升發光效能。 當然，除了上述磁性構件30之態樣及設置位置之外， 磁性構件30可有其他變化態樣及設置位置，例如磁性構 件30可包含至少三磁性層、磁性構件30可設置於光電疊 層之上、或磊晶層22内、或是磁性構件30可設置於光電 疊層20之四側之任何一側，藉此磁性構件30可提供X、 Y及/或Z軸方向之磁力給光電疊層20。 201222876 此外，本發明不限制磁性構件30之形狀，其 為長條狀、複數點狀、不遠續八# 〇 以下以圖6入至圖6C舉例說明之。 办狀 至圖6C為光電元件W2e之上視示意圖。如 圖从所不，磁性構件30位於第一電極23與第 之間，磁性構件3〇呈長條形，且其長轴方向係與通過第 電極23與第二電極24之假想線垂直。磁性構件 產生通過光電疊層之磁場為γ軸方向（指出紙面方向）。 於此，磁性構件3(Η系以埋設於光電叠層2〇之内為例，者 然，磁性構件3G亦可位於光電疊層2()之上或鄰設於光; 疊層20。 如圖6B所示，磁性構件3〇位於第一電極幻與第二 電極24之間’磁性構们〇呈不連續分佈之長條形且包含 三磁性層’該等磁性層之中間之磁性層之長軸方向大致血 通過第-電極23及第二電極24之假想線平行。藉由三磁 性層所分職生通過光電疊層之磁場之交互作用，可讓運 動載子之運動路徑的改變效果更加顯著。 如圖6C所示，磁性構件3〇係呈點狀並分佈於光電疊 層20内。每一點狀之磁性構件皆形成一小磁場，該等磁 場之交互作用可使運動載子有不同於圖6B所示態樣之運 動路徑。 藉由不同形狀或分佈之磁性構件，可產生不同強度或 方向之電場，以對運動載子產生不同的延長效應，進而增 加磁性構件的應用性。 12 201222876 、綜上所述，本發明之光電元件藉由磁性構件的設置， 磁性構件可產生通過光電疊層之磁場，進而使光電疊層内 之運動中的載子受到霍爾效應（Hall effect)而改變1運動 路徑而提升光電效能。例如對發光二極體而言，利用霍爾 效應使光電疊層之運動載子產生作用，改變其運動方向， 進而延長載子的運動路徑而達到電流擴散目的、或增加載 2分留，主要發光區的時間而增加載子復合發光的機 έ ’而提升發光效能。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與㈣，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 3為種s知之發光二極體元件的側視示意圖； 圖2為運動載子受霍爾效應而改變運動路徑的示音 圖； " 圖3至圖5為本發明較佳實施例之一種光 磁性構件之不同態樣的示意圖；以及 /、 圖6Α至圖6C為本發明較佳實施例之一種光電元件及 其磁性構件之不同態樣的上視示意圖。 【主要元件符號說明】 1 :發光二極體元件 11、21 ·基板 13 201222876 12 :Ν型半導體層 13、 223 :多重量子井層 14 :Ρ型半導體層 15 : 透光導電層 16、 23 :第一電極 17、 24 :第二電極 2、 2a〜2e :光電元件 20 ： 光電疊層 22 ： 遙晶層 221 :第一半導體層 222 :第二半導體層 224 :凹槽 25 ： 反射鏡 26 ： 鈍化層 28 ： 電流擴散層 30 ： 磁性構件 31、 32 :磁性層 B ： 磁場 Μ : 平台201222876 VI. Description of the Invention: [Technical Field of the Invention] The present invention is a "photoelectric element, which is dedicated to - a photovoltaic element that generates a magnetic field. [Prior Art] A light-emitting diode (LED) is - A light-emitting element made of a semiconductor material. Since the light-emitting diode is a cold light-emitting device, it has the advantages of low power consumption, long component life, fast reaction speed, and the like, and the small size is easy to be made into a very small or array element. Characteristics, so in recent years, with the technical break (four) steps, it should be closed _ cover product indicator light, liquid crystal (four) set back source or even traffic == with indicator light. Figure 1 is a conventional light-emitting diode body A side view of the light emitting diode element 1 includes a substrate 11, an N-type semiconductor layer 12, a multiple quantum well layer u, a -P type semiconductor layer 14, a light-transmitting conductive layer 15, and a -electrode 16 And a second electrode 17. In the light-emitting diode element 1, the above-mentioned elements are stacked from the substrate U to the next layer and grow along the Y-axis direction, and the multiple quantum well layer 13 as the main light-emitting area is often only There are dozens or hundreds of When the current flows from the second electrode 17 (positive electrode) to the first electrode 16 (negative electrode), there will be a 2 degree component along the χ, γ, ζ# direction (the velocity components of Vx and Vy are shown in Fig. 1). Moreover, the carrier will pass through the main illuminating zone', and it will not be able to stay in the main illuminating zone for a long time to compound and generate photons, thus causing the light-emitting diode component to be ineffective in 201222876. Therefore, how to provide a photoelectric The component has become one of the important topics by improving the light-emitting efficiency or power generation performance of the photoelectric element by changing the moving path of the carrier in the photovoltaic element. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a photovoltaic element The light-emitting efficiency of the photovoltaic element is improved by changing the path of movement of the carrier in the photovoltaic element. To achieve the above object, a photovoltaic element according to the invention comprises an optoelectronic laminate and a magnetic member. The magnetic member is disposed in the photovoltaic stack or Adjacent to the photovoltaic stack and generating a magnetic field. In an embodiment, the photovoltaic element can be a light emitting diode element, which is produced by a magnetic member Field, the light-emitting diode element can be made to improve luminous efficacy. In an embodiment, the magnetic member can be located under or over the photovoltaic stack. Thus, a magnetic field can be generated through the photovoltaic stack to extend the carrier in the photovoltaic stack. In one embodiment, the photovoltaic stack has a substrate and a telecrystalline layer, and the crystal layer is disposed on the substrate, and the photoelectric stack further has a current diffusion layer disposed on the epitaxial layer, and magnetic The component is embedded in the current diffusion layer, and the magnetic member generates a magnetic field through the photovoltaic stack to extend the movement path of the carrier within the photovoltaic stack. In an embodiment, the photovoltaic stack has a substrate and an epitaxial layer, 201222876 The crystal layer is disposed on the substrate, and the epitaxial layer has at least one groove to form the epitaxial layer into a platform, and the magnetic member is located in the groove of the epitaxial layer. For example, the magnetic member may comprise two magnetic layers respectively located on two sides of the platform of the epitaxial layer and adjacent to one of the multiple quantum well layers of the epitaxial layer to generate a magnetic field passing through the photomultilayer to extend the carrier. The path of motion within the photovoltaic stack. Further, in this embodiment, the height of the magnetic member may not exceed the height of the platform to avoid shading. In one embodiment, the optoelectronic stack has a substrate and a telecrystalline layer, and the stray layer is disposed on the substrate. The photo stack has a first electrode and a second electrode, and the first electrode is disposed on the epitaxial layer. In one of the grooves of the layer, the second electrode is disposed on the epitaxial layer, and the magnetic member is located between the second electrode and the epitaxial layer to generate a magnetic field passing through the photo-stack to extend the carrier in the photo-stack The path of motion. In one embodiment, the magnetic member and the second electrode are at least partially overlapped, and by having the magnetic member and the second electrode overlap, the amount of shading caused by the two can be reduced. In one embodiment, the magnetic member comprises iron, cobalt, nickel, manganese, or other magnetic material. In addition, the magnetic member may further comprise a highly reflective material for use as a reflective layer. In an embodiment, the magnetic member may be in the form of a strip, a plurality of dots, or a discontinuous distribution. The magnetic members of different shapes or distributions may generate electric fields of different strengths or directions to generate different carriers. The effect is prolonged, which in turn increases the applicability of the magnetic member. To achieve the above object, a photovoltaic element of the present invention comprises a photovoltaic stack 201222876 layer and a magnetic member. The photovoltaic stack has a substrate and a worm layer, and the worm layer is disposed on the substrate, and the epitaxial layer has at least one recess to form the epitaxial layer into a platform. The magnetic member is located in the groove of the insect layer to create a magnetic field through the photovoltaic stack. To achieve the above object, a photovoltaic element of the present invention comprises a photovoltaic stack and a magnetic member. The photoelectric stack has a substrate and a telecrystal layer, and the telecrystal layer is disposed on the substrate. The photoelectric stack further has a first electrode and a second electrode, and the first electrode is disposed in a recess of the epitaxial layer. The second electrode is disposed on the epitaxial layer. A magnetic member is disposed within the optoelectronic stack and between the second electrode and the epitaxial layer to create a magnetic field through the optoelectronic stack. As described above, the photovoltaic element of the present invention can be formed by a magnetic member, and the magnetic member can generate a magnetic field passing through the photovoltaic stack, thereby causing the carrier in motion in the photovoltaic stack to be changed by the Hall effect. Its motion path enhances photoelectric efficiency. For example, for the light-emitting diode, the Hall effect is used to make the moving carrier of the photoelectric stack work, change its moving direction, thereby prolonging the moving path of the carrier to achieve the purpose of current spreading, or increasing the carrier to stay in the main light. The time of the zone increases the chance of the composite luminescence of the carrier, and improves the luminous efficacy. [Embodiment] Hereinafter, a photovoltaic element according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals. Before describing the present invention, the Hall effect (Hall 201222876 effect) will be briefly described with reference to FIG. The Hall effect means that when a magnetic field is inside a 'conductor', passing 'and placed on the side, and then generating a voltage, except that the conductor is biased by a Lorentz force to a π θ "conductor, the semiconductor can also The Hall effect is generated, = the Hall effect of the conductor is stronger than the conductor. As shown in Figure 2, the movement of a carrier ^^上^度^动' another - the magnetic field ^ is the carrier is positive Ray 1 'its magnetic force The direction is to indicate the direction of the axis of the paper. When the carrier: I is subjected to the magnetic field 6, according to the right hand rule, the positive charge t is recorded in the direction of the velocity V and the magnetic field ,, that is, downward (¥ axial) Similarly, if the carrier is a negative charge, it is subjected to the magnetic field and the upper path is changed. The movement path of the carrier is changed. / Please refer to FIG. 3 for a preferred embodiment of the present invention. A photovoltaic element is a package 3 photovoltaic layer 2G and a magnetic member 3 (). The photovoltaic element of the present invention can be, for example, a light-emitting diode (LED). The photovoltaic stack 20 comprises - The substrate 2 includes an epitaxial layer 22, a first electrode 23, and a second electrode 24. The material of the Φ plate 21 may include, for example, sapphire. Sapphire), carbonized stone (SlC) 'decarburized gallium (GaP), gallium arsenide (GaAs) or germanium (Si), sapphire is taken as an example. The cat layer 22 is disposed on the substrate 21. The layer 22 can be any semiconductor layer, for example, including a first semiconductor layer 221 and a second semiconductor layer 22, wherein the first semiconductor layer 221 and the second semiconductor layer 222 have different electrical properties. In this embodiment, the first The semiconductor layer 22 i is a P-type 'the second semiconductor layer is N-type, and can be changed according to the function of the light-emitting diode, such as a blue diode, a green diode, a red diode, etc., 201222876 The material of the crystal layer 22. The material of the crystal layer 22 can be selected, for example, from a material of the gallium nitride (GaN) series, for example, including indium gallium nitride (in〇aN), aluminum gallium nitride (AlGaN) or aluminum indium phosphide. The gallium (AlInGaP) series, etc. In addition, the stray layer 22 may further comprise a multiple quantum well (MQW) 223 to generate the desired light, and the multiple quantum well layer 223 is sandwiched between the first semiconductor layer 221 And the second semiconductor layer 222. In order to electrically conduct the second semiconductor layer 222, the first semiconductor layer 221 and a portion of the multiple quantum well layer 223 is removed by, for example, a lithography process to form a recess 224 for exposing a portion of the surface of the second semiconductor layer 222. The first electrode 23 is disposed on the second semiconductor layer 222. The exposed surface, that is, the first electrode 23 is disposed in the recess 224. The photo-electric element 2 may further include a current diffusion layer 28' which is a transparent conductive layer (TCL)' Above the worm layer 22, the current is uniformly diffused and then passed through the first semiconductor layer 221 and then through the multiple quantum well layer 223. The material of the current diffusion layer 28 of this embodiment may be, for example, indium tin oxide (IT0) to avoid light shielding. The second electrode 24 is disposed on the epitaxial layer 22 and on the current spreading layer 28. The magnetic member of the present invention can be disposed within or adjacent to the photovoltaic stack 20 and produces a magnetic field through the photovoltaic stack 20. The magnetic member 30 of the present embodiment is a magnetic material layer and is disposed adjacent to the photovoltaic laminate 20 as an example. The magnetic member 30 is disposed under the photovoltaic laminate 20. Here, the photovoltaic stack 20 further includes a mirror 25, and the magnetic member 30 is disposed under the mirror 25. The material of the magnetic member 30 may include, for example, iron, cobalt, nickel or manganese, the magnetic member 30 may further comprise a highly reflective material such as aluminum or silver, or the magnetic 201222876 member 30 may form a reflective structure, whereby the photovoltaic stack 20 may not A mirror 25 needs to be provided. The magnetic member 30 can be disposed under the photovoltaic stack 20 by evaporation or bonding. After the setting, a strong magnetic field can be applied, so that the magnetic member 30 obtains a fixed magnetic property (the N pole and the S pole thereof are as shown), and the magnetic field caused by the magnetic member 30 can provide the magnetic force in the Y-axis direction to the photoelectric Stack 20. Of course, if the material of the magnetic member 30 itself has a magnetic force to generate a magnetic field, the step of applying a magnetic field is not required. By passing the magnetic field in the Y-axis direction of the photo-electric stack 20, the velocity component of the carrier of the photo-stack 20 in the X and Z-axis directions can be changed by the Hall effect to change its motion path, for example, to enable the carrier. The motion becomes spiral, thereby extending the movement path of the carrier from the second electrode 24 to the first electrode 23, thereby achieving the purpose of current spreading, or increasing the time that the carrier stays in the main light-emitting region to increase the chance of composite light-emitting of the carrier. And improve the luminous efficiency. In addition to the above-described positions, the magnetic member of the present invention can be disposed at various positions of the photovoltaic stack to generate a magnetic field through the photo-lamination to change the motion path of the motion carrier by the Hall effect, as exemplified below. Referring to Fig. 4, in the photovoltaic element 2a of the present aspect, the photovoltaic element 2a comprises a photovoltaic stack 20 and a magnetic member. The photo-electric element 2a has two recesses 224 such that the epitaxial layer (including the first semiconductor layer 221, the second semiconductor layer 222 and the multiple quantum well layer 223) forms a mesa and exposes a portion of the second semiconductor layer. 222 surface. The photo-electric element 2a further includes a passivation layer 26 disposed on the epitaxial layer, the current diffusion layer 28, the first electrode 23 and the second electrode 24, 201222876 and extended to the grooves 224. . Here, the magnetic member includes two magnetic layers 31, 32 which are respectively located in the grooves 224 of the photovoltaic element 2a and are located on both sides of the land. The magnetic layers 31, 32 are also disposed adjacent to the multiple quantum well layers 223 of the crystallized layer 22, and adjacent to the multiple quantum well layers 223. The magnetic layers 31, 32 can be formed in the recess 224 by, for example, evaporation, lithography, and etching processes. Thereby, the magnetic layers 31, 32 generate a magnetic field that passes through the photovoltaic stack 20, and can provide magnetic force in the X-axis direction to the photovoltaic stack 20. By passing the magnetic field in the X-axis direction of the photo-electric stack 20, the velocity component of the carrier of the photo-stack 20 in the x-axis and the x-axis direction can be changed by the Hall effect to change its motion path, for example, to change the motion of the carrier. Is spiral, thus extending the movement path of the carrier from the second electrode 24 to the first electrode 23, to achieve the purpose of current spreading, or increasing the time that the carrier stays in the main light-emitting region, thereby increasing the chance of carrier composite luminescence, and improving Luminous performance. Further, in this embodiment, the height of the magnetic layers 31, 32 of the magnetic member may not exceed the height of the platform 以避免 to avoid shading. The state shown in Fig. 4 is exemplified by the height of the magnetic layers 31, 32 and the height of the groove 224. Since the magnetic member is adjacent to the multiple quantum well layer 223, and the multiple quantum well layer 223 is the main light-emitting region, the magnetic force can have a strong influence on the carrier in the main light-emitting region under the setting conditions, so the strong magnetic force can It more effectively affects the motion path of the carrier, increases the chance of composite light emission of the carrier, and improves the luminous efficiency. Referring to Fig. 5, in the photovoltaic element 2b of the present aspect, the photovoltaic element 2b includes a photovoltaic stack 20 and a magnetic member 30. The magnetic member 10 201222876 30 is disposed in the photovoltaic stack 20 between the second electrode 24 and the epitaxial layer 22 . Here, the magnetic member 30 is embedded in the current diffusion layer 28 and located at the second electrode 24 . Below, and the magnetic member 30 and the second electrode 24 at least partially overlap. Since the magnetic member 30 and the second electrode 24 are generally light-shielding materials, by partially overlapping the magnetic member 30 and the second electrode 24, the area where the light emitted by the light-emitting diode is blocked can be reduced to reduce the occurrence of light-shielding. . Taking FIG. 5 as an example, the magnetic member 30 is located directly under the second electrode 24 and completely covered by the second electrode 24, so that the magnetic member 30 does not cause an additional light blocking effect. The magnetic member 30 can be formed on the epitaxial layer 22 by, for example, an evaporation, lithography, and etching process. Thereby, the magnetic member 30 generates a magnetic field passing through the photovoltaic stack 20, and can supply magnetic force in the Y-axis direction to the photovoltaic stack 20. By passing the magnetic field in the Y-axis direction of the photo-electric stack 20, the velocity component of the carrier of the photo-stack 20 in the X and Z-axis directions can be changed by the Hall effect to change its motion path, for example, to change the motion of the carrier. Is spiral, thus extending the movement path of the carrier from the second electrode 24 to the first electrode 23, to achieve the purpose of current spreading, or increasing the time that the carrier stays in the main light-emitting region, thereby increasing the chance of carrier composite luminescence, and improving Luminous performance. Of course, in addition to the above-described state and arrangement position of the magnetic member 30, the magnetic member 30 may have other variations and positions. For example, the magnetic member 30 may include at least three magnetic layers, and the magnetic member 30 may be disposed on the photovoltaic stack. The upper or the epitaxial layer 22 or the magnetic member 30 may be disposed on either side of the four sides of the optoelectronic stack 20, whereby the magnetic member 30 can provide magnetic force in the X, Y and/or Z axis directions to the photo stack Layer 20. Further, the present invention does not limit the shape of the magnetic member 30, which is a long strip shape, a plurality of dots, and not a continuation of eight 〇 exemplified below with reference to Fig. 6C. Figure 6C is a schematic top view of the photovoltaic element W2e. As shown in the figure, the magnetic member 30 is located between the first electrode 23 and the first, and the magnetic member 3 is elongated and has a major axis direction perpendicular to the imaginary line passing through the first electrode 23 and the second electrode 24. The magnetic member generates a magnetic field that passes through the photo-lamination in the γ-axis direction (indicating the direction of the paper surface). Here, the magnetic member 3 is exemplified by being embedded in the photovoltaic laminate 2, and the magnetic member 3G may be located on or adjacent to the photovoltaic laminate 2(); As shown in FIG. 6B, the magnetic member 3 is located between the first electrode phantom and the second electrode 24, and the magnetic layer is formed in a strip shape in which the magnetic structures are discontinuously distributed and includes a three magnetic layer Between the magnetic layers. The longitudinal direction of the blood is substantially parallel to the imaginary line of the first electrode 23 and the second electrode 24. The interaction of the moving path of the moving carrier can be achieved by the interaction of the magnetic fields of the photoelectric stack by the three magnetic layers. More prominently. As shown in Fig. 6C, the magnetic members 3 are dotted and distributed in the photovoltaic stack 20. Each of the magnetic members of the dot forms a small magnetic field, and the interaction of the magnetic fields allows the moving carrier to have Different from the motion path shown in Fig. 6B. By different shapes or distributions of magnetic members, electric fields of different strengths or directions can be generated to produce different elongation effects on the moving carriers, thereby increasing the applicability of the magnetic members. 12 201222876, in summary, In the photovoltaic element of the invention, by the arrangement of the magnetic member, the magnetic member can generate a magnetic field through the photoelectric stack, thereby causing the carrier in the movement in the photoelectric stack to be subjected to a Hall effect to change the 1 motion path to enhance the photoelectricity. For example, for the light-emitting diode, the Hall effect is used to make the moving carrier of the photoelectric stack work, change its moving direction, and then extend the moving path of the carrier to achieve the purpose of current spreading, or increase the load of 2 minutes. , the time of the main illuminating zone increases the carrier compositing luminescence' to enhance the illuminating efficiency. The above description is only exemplary and not limiting. Any one without departing from the spirit of the invention and (4) Equivalent modification or modification shall be included in the scope of the patent application attached. [Simplified description of the diagram] 3 is a side view of the light-emitting diode element of the species; Figure 2 is the Hall effect of the moving carrier And a schematic diagram of changing a motion path; " FIG. 3 to FIG. 5 are schematic diagrams showing different aspects of a photomagnetic member according to a preferred embodiment of the present invention; and/or FIG. 6A to FIG. A top view of a different aspect of a photovoltaic element and a magnetic member thereof according to a preferred embodiment of the invention. [Description of main components] 1 : Light-emitting diode elements 11 and 21 · Substrate 13 201222876 12 : Ν-type semiconductor layer 13, 223: multiple quantum well layer 14: germanium-type semiconductor layer 15: light-transmitting conductive layer 16, 23: first electrode 17, 24: second electrode 2, 2a to 2e: photovoltaic element 20: photovoltaic layer 22: telecrystal layer 221: first semiconductor layer 222: second semiconductor layer 224: groove 25: mirror 26: passivation layer 28: current diffusion layer 30: magnetic member 31, 32: magnetic layer B: magnetic field Μ: platform