TW201222558A - Conductive particles, anisotropic conductive material and connection structure - Google Patents
Conductive particles, anisotropic conductive material and connection structure Download PDFInfo
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- TW201222558A TW201222558A TW100135338A TW100135338A TW201222558A TW 201222558 A TW201222558 A TW 201222558A TW 100135338 A TW100135338 A TW 100135338A TW 100135338 A TW100135338 A TW 100135338A TW 201222558 A TW201222558 A TW 201222558A
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
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Abstract
Description
201222558 六、發明說明: 【發明所屬之技術領域】 本發明,例如,係關於一種可用於電極間之連接之導電 性粒子,更為詳細而言係關於一種具有基材粒子及設置於 該基材粒子之表面上之導電層之導電性粒子。又,本發明係 關於使用上述導電性粒子之異向性導電材料及連接構造體。 【先前技術】 異向性導電膏及異向性導電膜等異向性導電材料已廣為 人知。該等異向性導電材料係於黏合樹脂中分散有導電性 粒子。 上述異向性導電材料可用於IC(Integrated Circuit,積體 電路)晶片與可接性印刷電路基板之連接、及IC晶片與具 有ITO(Indium-Tin Oxide,氧化銦錫)電極之電路基板的連 接等。例如,於將異向性導電材料配置於1(:晶片之電極與 電路基板之電極之間後,進行加熱及加壓,藉此可將該等 電極電性連接。 作為上述異向性導電材料所使用之導電性粒子之一例, 於下述專利文獻1中揭示有具備樹脂粒子、及設置於該樹 脂粒子之表面上之銅層的導電性粒子。於專利文獻丨中, 並未以具體之實施例揭示此種導電性粒子,但記載有可於 相對向之電路之連接中獲得良好之電性連接。 如較多地用於專利文獻丨所記载之實施例中般,先前具 有錄層之導電性粒子為主流。然而,鎳本身存在電阻較 高、難以降低連接電阻之問題。相對於此,銅由於電阻較 159121.doc 201222558 低,故就降低連接電阻之觀點而言,若將銅用作導電性粒 子之導電層則較為有利。然而,銅具有與鎳等相比較軟之 性質。因此,由鋼所形成之導電層過軟,若對於導電性粒 子賦予較大之力,則易於導電層中產生裂痕。例如,於將 先前之導電性粒子用於電極間之連接而獲得連接構造體之 情形時’有於導電層中產生較大之裂痕之情;兄。因此,有 無法確實地將電極間連接之情況。 又,作為具有含有銅之導電層之導電性粒子,於下述專 利文獻2中揭示有冑有錫.銀·銅之三元系合金覆膜的導電性 粒子。於專利文獻2之實施例中,為了獲得導電性粒子, 而於銅金屬粒子之表面形成鍍錫覆膜,繼而形成鍍銀覆 膜’藉由加熱至24CTC以上而引起金屬熱擴散,形成錫_銀_ 銅之三元系合金覆膜。 上述專利文獻2中記載有,錫_銀_銅三元系之合金覆膜 中之組成之含有比例係錫為8〇〜99 8重量%、銀為〇丨〜1〇重 量%、銅為(M〜H)重量具體而言’於上述專利文獻2之 全部實施例中形成有錫為96.5重量%、銀為3重量%、銅為 〇·5重量%之合金覆膜。該導電性粒子含有相對較少之銀及 銅且含有相對較多之錫’故而錫_銀_銅之三元系合金覆膜 之熔點變得相對較低^含有具有熔點較低之導電層之導電 性粒子的異向性導電材料於為形成連接構造體而特熱壓 接時,由於存在由熱引起導電層之流動且流出必要以上之 情況’進而由於與電極連接之導電層之厚度變得過薄,故 而存在產生連接不良之情況。 159121.doc 201222558 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2003-323813號公報 [專利文獻 2] W02006/080289A1 【發明内容】 [發明所欲解決之問題] 本發明之目的在於提供一種即便對導電性粒子賦予較大 之力亦難以於導電層中產生較大之裂痕的導電性粒子、以 及使用該導電性粒子之異向性導電材料及連接構造體。 又’本發明之限定性之目的在於提供一種銅-錫層之熔 點較咼且於為形成連接構造體而進行熱壓接時可抑制銅_ 錫層之過度之熱變形及流出的導電性粒子,以及使用該導 電性粒子之異向性導電材料及連接構造體。 [解決問題之技術手段] 根據本發明之廣泛態樣,提供一種導電性粒子,其具備 土材粒子及δ又置於该基材粒子之表面上之含有銅與錫之 銅-錫層’且該銅_錫層含有銅與錫之合金,該銅-錫層整體 中之銅之含量超過20重量❶/◦且為75重量%以下,並且錫之 含1為25重量%以上且未達8〇重量〇/0。 於本發明之導電性粒子之某一特定態樣中,上述鋼-錫 層之熔點為550eC以上》 於本發明之導電性粒子之某一特定態樣中,上述銅·錫 層整體中之銅之含量為40重量%以上、60重量%以下,且 錫之含量為40重量%以上、6〇重量%以下。 15912 丨.doc 201222558 於本發明之導電性粒子之某一特定態樣中,該導電性粒 子於表面上具有突起。 Μ發明之導電'_子之另—特定態樣中,具備配置於 上述鋼-錫層之表面上之絕緣性物質。 於本發明之導電性粒子之進而另—特定態樣中,上述絕 緣性物質為絕緣性粒子。 本發明之異向性導電材料含有依據本發明所構成之導電 性粒子及黏合樹脂。 本發明之連接構造體具備第1連接對象構件、第2連接對 象構件、及連接該第1、第2連接對象構件之連接部,且該 連接部係藉由依據本發明所構成之導電性粒子而形成,或 藉由含有該導電性粒子及黏合樹脂之異向性導電材料而形 成。 [發明之效果] 本發明之導電性粒子由於在基材粒子之表面上設置有含 有銅與錫之銅-錫層,該銅-錫層含有銅與錫之合金,進而 該銅-錫層整體中之銅之含量超過20重量%且為75重量%以 下’並且錫之含量為25重量%以上且未達80重量%,故而 即便對導電性粒子賦予較大之力亦難以於導電層中產生較 大之裂痕。 【實施方式】 以下,藉由一面參照圖式一面對本發明之具體實施形態 及貫施例進行說明而明確本發明。 圖1係表示本發明之第1實施形態之導電性粒子的剖面201222558 VI. Description of the Invention: [Technical Field] The present invention relates to, for example, an electroconductive particle which can be used for connection between electrodes, and more particularly to a substrate having a substrate and disposed on the substrate Conductive particles of a conductive layer on the surface of the particles. Further, the present invention relates to an anisotropic conductive material and a bonded structure using the above conductive particles. [Prior Art] An anisotropic conductive material such as an anisotropic conductive paste or an anisotropic conductive film is widely known. The anisotropic conductive material is obtained by dispersing conductive particles in a binder resin. The anisotropic conductive material can be used for connection between an IC (Integrated Circuit) wafer and a splicable printed circuit board, and connection of an IC chip to a circuit substrate having an ITO (Indium-Tin Oxide) electrode. Wait. For example, after the anisotropic conductive material is disposed between 1 (the electrode of the wafer and the electrode of the circuit board, heating and pressurization are performed, the electrodes can be electrically connected. As the anisotropic conductive material. An example of the conductive particles to be used is a conductive particle comprising a resin particle and a copper layer provided on the surface of the resin particle, as disclosed in Patent Document 1 below. The embodiment discloses such a conductive particle, but it is described that a good electrical connection can be obtained in connection with a circuit to the circuit. As in the embodiment described in the patent document ,, the previous recording layer is used. The conductive particles are the mainstream. However, nickel itself has a high resistance and it is difficult to reduce the connection resistance. On the other hand, since copper has a lower resistance than 159121.doc 201222558, the connection resistance is lowered. It is advantageous to use as a conductive layer of conductive particles. However, copper has a softer property than nickel, etc. Therefore, the conductive layer formed of steel is too soft, if it is for conductive particles. When a large force is applied, cracks are easily generated in the conductive layer. For example, when the prior conductive particles are used for the connection between the electrodes to obtain a bonded structure, a large crack is generated in the conductive layer. Therefore, there is a case where the electrodes are not reliably connected. Further, as the conductive particles having the conductive layer containing copper, Patent Document 2 below discloses a ternary system of tin, silver, and copper. In the embodiment of Patent Document 2, in order to obtain conductive particles, a tin plating film is formed on the surface of the copper metal particles, and then a silver plating film is formed to be heated to 24 CTC or more. The ternary alloy coating film of tin-silver-copper is formed by thermal diffusion of the metal. The above-mentioned Patent Document 2 discloses that the composition ratio of the composition in the alloy coating of the tin-silver-copper ternary system is 8 锡. ~998% by weight, silver is 〇丨1% by weight, and copper is (M~H) by weight. Specifically, in all the examples of the above Patent Document 2, tin is 96.5 wt% and silver is 3 wt. %, copper is 〇·5 wt% alloy coating The conductive particles contain relatively little silver and copper and contain relatively more tin'. Therefore, the melting point of the ternary alloy coating of tin-silver-copper becomes relatively low, and contains a conductive layer having a lower melting point. When the anisotropic conductive material of the conductive particles is specifically thermocompression bonded to form a connection structure, there is a case where the flow of the conductive layer is caused by heat and the flow is more than necessary. Further, the thickness of the conductive layer connected to the electrode is changed. In the case of a thin connection, there is a case where a connection failure occurs. 159121.doc 201222558 [Prior Art Document] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-323813 (Patent Document 2) WO2006/080289A1 [Problem to be Solved by the Invention] An object of the present invention is to provide a conductive particle which is less likely to cause a large crack in a conductive layer even if a large force is applied to the conductive particles, and a difference in the use of the conductive particle. A conductive material and a bonded structure. Further, the object of the present invention is to provide an electroconductive particle which can suppress excessive thermal deformation and outflow of a copper-tin layer when the copper-tin layer has a relatively high melting point and is thermocompression bonded to form a bonded structure. And an anisotropic conductive material and a connection structure using the conductive particles. [Technical means for solving the problem] According to a broad aspect of the present invention, there is provided an electroconductive particle comprising a soil material particle and a copper-tin layer containing copper and tin disposed on a surface of the substrate particle and The copper-tin layer contains an alloy of copper and tin, and the content of copper in the copper-tin layer as a whole exceeds 20% by weight/◦ and is 75% by weight or less, and the content of tin 1 is 25% by weight or more and less than 8 〇 Weight 〇 /0. In a specific aspect of the conductive particles of the present invention, the steel-tin layer has a melting point of 550 eC or more. In a specific aspect of the conductive particles of the present invention, the copper in the copper-tin layer as a whole The content is 40% by weight or more and 60% by weight or less, and the content of tin is 40% by weight or more and 6% by weight or less. 15912 丨.doc 201222558 In a particular aspect of the electrically conductive particles of the present invention, the electrically conductive particles have protrusions on the surface. In another aspect of the invention, the conductive material of the invention has an insulating material disposed on the surface of the steel-tin layer. In still another specific aspect of the conductive particles of the present invention, the insulating material is an insulating particle. The anisotropic conductive material of the present invention contains the conductive particles and the binder resin composed according to the present invention. The connection structure of the present invention includes a first connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is made of conductive particles according to the present invention. It is formed or formed by an anisotropic conductive material containing the conductive particles and the binder resin. [Effects of the Invention] The conductive particles of the present invention have a copper-tin layer containing copper and tin on the surface of the substrate particles, and the copper-tin layer contains an alloy of copper and tin, and the copper-tin layer as a whole The content of copper in the content exceeds 20% by weight and is 75% by weight or less and the content of tin is 25% by weight or more and less than 80% by weight. Therefore, it is difficult to produce a conductive layer even if a large force is applied to the conductive particles. Larger cracks. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described with reference to the specific embodiments and the embodiments of the present invention. Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.
159121.doc 201222558 圖。 圖1所示之導電性粒子1具備基材粒子2、及設置於該基 材粒子2之表面2a上之銅·錫層3β鋼_錫層3為導電層(第濤 電層)。導電性粒子i亦可進而具備配置於銅_錫層3之表面 3a上之絕緣性物質。進而’亦可於銅-錫層3之表面h上積 層纪層等其他導電層(第2導電層)。上述絕緣性物質亦可經 由把層等其他導電層而間接地配置於鋼-錫層3之表面3a 上。 銅-錫層3含有鋼與錫之合金。於本實施形態中,銅錫 層3為銅·錫合金層。銅_錫層之—部分區域亦可不含錫, 銅-錫層之-部分區域亦可不含銅。例如,銅_錫層之内側 部分亦可僅含銅,銅-錫層之外側部分亦可僅含錫。銅_錫 層3整體中之銅之含量超過2〇重量%且為75重量%以下,並 且錫之含量為25重量%以上且未達8〇重量0/〇。 本實施形態之特徵在於:設置於基材粒子2之表面。上 之銅-錫層3含有銅與錫之合金,且銅_錫層3整體中之銅之 含,。超過20重量%且為75重量%以下,並且錫之含量為^ 重罝%以上且未達80重量。藉由形成此種銅-錫層3,即 便對導電層賦予較大之力亦難以於導電層中產生較大之裂 痕》可認為其原因在於:藉由銅與錫之合金化,銅·錫層3 之硬度適度地變高。因此,於將導電性粒子1用於電極間 之連接而獲得連接構造體之情形時,難以於導電層甲產生 較大之裂痕,且可提高電極間之導通可靠性。再者,所謂 上述較大之裂痕,係指導電層自基材粒子剝離並脫落而產 I59121.doc 201222558 生電極間之連接不良之程度的梦 又幻製痕。進而’銅-錫層3由於 含有相對較多之銅’故而可降依 1兮他電極間之連接電阻。 再者,銅與錄相比導通性較高。因此,為了提高導通 性,較佳為使用銅而並非錄。本發明係於導電層中使用 銅。又’本發明與通常稱為焊錫之導電物質不同,使用相 對較多之銅。 銅_錫層3整體中之銅之含量較佳為3〇重量%以上、更佳 為35重量%以上、進而較佳為懈量%以上,較佳為7〇重 置%以下。鋼-錫層3整體中之踢之含量較佳為3〇重量%以 上,較佳為70重量%以下、更佳為65重量%以下進而較 佳為6 0重量%以下。 較佳為,銅-錫層3整體中之銅之含量為3〇重量%以上、 7〇重量%以下,且錫之含量為3〇重量,以上、70重量%以 下。更佳為,銅-錫層3整體中之鋼之含量為35重量%以 上、65重量%以下,且錫之含量為^重量%以上、^重量 乂下進而較佳為,鋼-錫層3整體中之銅之含量為4〇重 里乂上60重量。/〇以下,且錫之含量為4〇重量%以上、 60重量%以下。 尤其疋,於銅-錫層3整體t之銅之含量為4〇重量%以 上、6〇重量%以下,且錫之含量為40重量%以上、6〇重量 %以下之情形時’即便對導電層賦予較大之力,亦更難以 於導電層中產生較大之裂痕。 再者,本發明中之銅與錫等金屬之各含量係以重量%表 不銅或錫相對於導電層之金屬之總重量的分量而獲得之 159l21.doc 201222558 值。作為其測定方法,可列舉如下者:以王水溶化導電層 之金屬,使用 ICP((InductiVely Coupled piasma)電感耦合 電漿,堀場製作所製造之「ULTIMA2」)測量溶解有該金 屬之溶液,根據所獲得之金屬離子濃度計算導電層之金屬 之重量及各金屬之分量。 圖1所示之導電性粒子i例如可使用圖4所示之導電性粒 子而獲得。 於基材粒子2之表面2a上形成含有銅之銅層52。繼而, 於銅層52之表面52a上形成含有錫之錫層53,獲得加熱前 之導電性粒子51。繼而,加熱導電性粒子51使銅與錫合金 化。。為了使銅與錫高效地合金化,上述加熱之溫度較佳為 150 C以上、更佳為18〇°c以上,較佳為25〇它以下更佳 為23〇°C以下。為了使銅與錫高效地合金化,尤佳為於 0 220 C下將V電性粒子加熱18〜24小日夺。銅-錫層3較佳 為以含有銅與錫之合金之方式於15代以上進行加熱處理 之銅-錫層。 於導電性粒子51中,可藉由調整銅層52與錫層之各厚 度而調整銅-錫層3整體中之銅之含量及錫之含量。 予 本發明之導電性粒子較佳為藉由對在基材粒子之表面上 設置有銅層且於該銅層之表面上設置有錫層的導電 進行加熱而獲得之導電性粒子。 圖2係表示本發明之第2實施形態之導電性粒子的剖面 圖。 圖2所示之導電㈣^具備基材粒子2、及設置於該基 159121.doc 201222558 材粒子2之表面2a上之銅-錫層12〇銅_錫層12為導電層。導 電〖生粒子11於基材粒子2之表面2a上具備複數個芯物質 13。作為導電層之銅-錫層12被覆芯物質13。導電層被覆 〜物質13,藉此導電性粒子丨丨於表面丨丨&上具有複數個突 起14。導電性粒子U於銅-錫層12外侧之表面12&上具有複 數個突起14。突起14係形成於銅-錫層12之表面12a上。銅_ 錫層12之表面12a因芯物質13而隆起,從而形成突起14。 於突起14之内側配置有芯物質13。於銅_錫層12之表面12& 上亦可積層有鈀層等其他導電層。 導電性粒子11具備配置於銅-錫層〗2之表面12a上之絕緣 !·生粒子15。絕緣性粒子15為絕緣性物質。於銅_錫層與絕 緣性粒子間亦可存在鈀層等其他導電層。於本實施形態 中銅-錫層12之表面12a之一部分區域藉由絕緣性粒子I〗 而被覆。如此,導電性粒子亦可具備附著於銅-錫層等導 電層之表面上之絕緣性粒子15。但是,亦可不必具備絕緣 性粒子15。進而,除絕緣性粒子15以外亦可具備絕緣性樹 脂層。導電性粒子亦可具備附著於銅-錫層等導電層之表 面上之絕緣性樹脂層。銅-錫層等導電層之表面亦可藉由 絕緣性樹脂層而被覆。該絕緣性樹脂層為絕緣性物質。 於圖5中’以剖面圖表示本發明之第3實施形態之導電性 粒子。 圖5所示之導電性粒子61具備基材粒子2、銅-錫層3、及 第2導電層62。第2導電層62係設置於導電性粒子1中之銅_ 錫層3之表面3a上。第2導電層62與銅-錫層3不同,又,亦 -10- 159121.doc159121.doc 201222558 Figure. The electroconductive particle 1 shown in Fig. 1 is provided with a substrate particle 2, and a copper-tin layer 3β steel-tin layer 3 provided on the surface 2a of the substrate particle 2 is a conductive layer (the second layer). The conductive particles i may further include an insulating material disposed on the surface 3a of the copper-tin layer 3. Further, another conductive layer (second conductive layer) such as a layer may be deposited on the surface h of the copper-tin layer 3. The insulating material may be indirectly disposed on the surface 3a of the steel-tin layer 3 by using another conductive layer such as a layer. The copper-tin layer 3 contains an alloy of steel and tin. In the present embodiment, the copper tin layer 3 is a copper/tin alloy layer. Part of the copper-tin layer may also be free of tin, and portions of the copper-tin layer may also be free of copper. For example, the inner portion of the copper-tin layer may also contain only copper, and the outer portion of the copper-tin layer may also contain only tin. The content of copper in the entire copper-tin layer 3 exceeds 2% by weight and is 75% by weight or less, and the content of tin is 25% by weight or more and less than 8% by weight. This embodiment is characterized in that it is provided on the surface of the substrate particle 2. The upper copper-tin layer 3 contains an alloy of copper and tin, and contains copper in the entire copper-tin layer 3. It is more than 20% by weight and is 75% by weight or less, and the content of tin is more than 5% by weight and less than 80% by weight. By forming such a copper-tin layer 3, it is difficult to cause a large crack in the conductive layer even if a large force is applied to the conductive layer. This is considered to be due to the alloying of copper and tin, copper and tin. The hardness of layer 3 is moderately high. Therefore, when the conductive particles 1 are used for the connection between the electrodes to obtain a connection structure, it is difficult to cause a large crack in the conductive layer A, and the conduction reliability between the electrodes can be improved. Further, the above-mentioned large crack is a dream and a sinusoid which guides the degree that the electric layer peels off from the substrate particles and falls off to produce a connection failure between the electrodes of I59121.doc 201222558. Further, the 'copper-tin layer 3 contains a relatively large amount of copper', so that the connection resistance between the electrodes can be lowered. Furthermore, copper is more conductive than recorded. Therefore, in order to improve the conductivity, it is preferable to use copper instead of recording. The present invention is the use of copper in the conductive layer. Further, the present invention uses a relatively large amount of copper unlike the conductive material generally called solder. The content of copper in the entire copper-tin layer 3 is preferably 3% by weight or more, more preferably 35% by weight or more, still more preferably 5% by weight or more, and more preferably 7 Å or more. The content of the knit in the steel-tin layer 3 as a whole is preferably 3% by weight or more, preferably 70% by weight or less, more preferably 65% by weight or less, and still more preferably 60% by weight or less. Preferably, the content of copper in the entire copper-tin layer 3 is 3% by weight or more and 7% by weight or less, and the content of tin is 3 Å by weight or more and 70% by weight or less. More preferably, the content of the steel in the entire copper-tin layer 3 is 35% by weight or more and 65% by weight or less, and the content of tin is 5% by weight or more, and more preferably, the weight of the steel layer is preferably the steel-tin layer 3 The total copper content in the whole is 4 weights and 60 weights. /〇 The following, and the content of tin is 4% by weight or more and 60% by weight or less. In particular, when the content of copper in the entire copper-tin layer 3 is 4% by weight or more and 6% by weight or less, and the content of tin is 40% by weight or more and 6% by weight or less, even if it is conductive. The layer imparts greater force and is more difficult to create larger cracks in the conductive layer. Further, the content of the metal such as copper and tin in the present invention is a value of 159l21.doc 201222558 obtained by weight component of copper or tin relative to the total weight of the metal of the conductive layer. The measurement method is as follows: a metal in which a conductive layer is melted with aqua regia, and a solution in which the metal is dissolved is measured using ICP (Inductively Coupled Piasma) inductively coupled plasma, "ULTIMA2" manufactured by Horiba, Ltd.) The obtained metal ion concentration is used to calculate the weight of the metal of the conductive layer and the amount of each metal. The conductive particles i shown in Fig. 1 can be obtained, for example, by using the conductive particles shown in Fig. 4 . A copper-containing copper layer 52 is formed on the surface 2a of the substrate particle 2. Then, a tin layer 53 containing tin is formed on the surface 52a of the copper layer 52, and conductive particles 51 before heating are obtained. Then, the conductive particles 51 are heated to alloy copper with tin. . In order to efficiently alloy copper and tin, the heating temperature is preferably 150 C or more, more preferably 18 〇 ° C or more, and is preferably 25 Å or less, more preferably 23 〇 ° C or less. In order to efficiently alloy copper with tin, it is particularly preferable to heat the V-electro-particles at 18 to 24 C for 18 to 24 hours. The copper-tin layer 3 is preferably a copper-tin layer which is heat-treated for 15 generations or more in a manner containing an alloy of copper and tin. In the conductive particles 51, the content of copper and the content of tin in the entire copper-tin layer 3 can be adjusted by adjusting the respective thicknesses of the copper layer 52 and the tin layer. The conductive particles of the present invention are preferably conductive particles obtained by heating a conductive layer provided with a copper layer on the surface of the substrate particles and a tin layer on the surface of the copper layer. Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention. The conductive (4) shown in Fig. 2 is provided with a substrate particle 2, and a copper-tin layer 12 provided on the surface 2a of the substrate 159121.doc 201222558 material particle 2 is a conductive layer. Conduction The green particles 11 have a plurality of core materials 13 on the surface 2a of the substrate particles 2. The copper-tin layer 12 as a conductive layer covers the core material 13. The conductive layer is coated with a substance 13 whereby the conductive particles have a plurality of protrusions 14 on the surface 丨丨 & The conductive particles U have a plurality of protrusions 14 on the surface 12& outside the copper-tin layer 12. The protrusions 14 are formed on the surface 12a of the copper-tin layer 12. The surface 12a of the copper _ tin layer 12 is embossed by the core material 13 to form the protrusions 14. A core material 13 is disposed inside the protrusions 14. Other conductive layers such as a palladium layer may be laminated on the surface 12& of the copper-tin layer 12. The conductive particles 11 are provided with insulating particles disposed on the surface 12a of the copper-tin layer 2. The insulating particles 15 are insulating materials. Other conductive layers such as a palladium layer may be present between the copper-tin layer and the insulating particles. In the present embodiment, a part of the surface 12a of the copper-tin layer 12 is covered by the insulating particles I. In this manner, the conductive particles may have insulating particles 15 adhered to the surface of the conductive layer such as a copper-tin layer. However, it is not necessary to provide the insulating particles 15. Further, an insulating resin layer may be provided in addition to the insulating particles 15. The conductive particles may have an insulating resin layer adhered to the surface of a conductive layer such as a copper-tin layer. The surface of the conductive layer such as a copper-tin layer may be coated with an insulating resin layer. This insulating resin layer is an insulating material. In Fig. 5, the conductive particles of the third embodiment of the present invention are shown in cross section. The conductive particles 61 shown in Fig. 5 are provided with a substrate particle 2, a copper-tin layer 3, and a second conductive layer 62. The second conductive layer 62 is provided on the surface 3a of the copper-tin layer 3 in the conductive particles 1. The second conductive layer 62 is different from the copper-tin layer 3, and is also -10- 159121.doc
201222558 可於導電性粒子11中之銅-錫層12之表面12a上設置第2導 電層。進而,亦可於基材粒子之表面上設置第2導電層, 並於該第2導電層上設置銅.錫層。即,亦可於基材粒子與 銅-錫層間配置第2導電層。 圖中Μ剖面圖表不本發明之第4實施形態之導電性粒 子。 中所不之導電性粒子7 i具備基材粒子2、及設置於該 基材粒子2之表面2a上之銅.錫層72。鋼-錫層72具有第^ 域、及厚度較第i區域薄之區域。銅_錫層72具有厚度不 均0 作為上述基材粒子,可列舉樹脂粒子、無機粒子、有機 無機混合粒子及金屬粒子等。 述基材粒子較佳為由樹脂所形成之樹脂粒子。於連接 電極間時’將導電性粒子配置於電極間後,通常使導電性 ;塱縮若基材粒子為樹脂粒子,則導電性粒子藉由壓 縮而易變形’導電性粒子與電極之接觸面積增大。因此, 可提鬲電極間之導通可靠性。 作為用以形成上述樹脂粒子之樹脂,可較佳地使用各種 有機物。作為用以形成上述樹脂粒子之樹月旨,例如可使 用:聚乙烯、聚丙烯、聚苯乙烯、聚氣乙烯、聚偏二氯乙 烯、聚丙婦、聚異丁烯、聚丁二婦等聚稀煙,聚曱基丙烯 酸甲酯、聚丙烯酸f酯等丙烯酸系樹脂,聚對苯二甲酸伸 烷基酯,聚颯,聚碳酸酯,聚醯胺,苯酚甲醛樹脂,三聚 鼠胺甲醛樹脂,苯并胍胺甲醛樹脂,脲甲醛樹脂等。例 159121.doc 201222558 如,藉由使1種或2種以上之具有乙烯性不飽和&之各種聚 合性單體聚合,可設計及合成具有適於導電材料之任意壓 縮時之物性的樹脂粒子。 於使具有乙烯性不飽和基之單體聚合而獲得上述樹脂粒 子之情形時,作為該具有乙烯性不飽和基之單體,可列舉 非交聯性單體及交聯性單體。 作為上述非交聯性單體,例如可列舉:苯乙烯、&甲基 苯乙稀等苯乙料單體,(曱基)丙烯酸、順了稀二酸、順 丁烯二酸酐等含羧基之單體,(甲基)丙烯酸曱酯、(甲基) 丙烯酸乙酯、(曱基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲 基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(曱基)丙烯 酸十六烷基酯、(曱基)丙烯酸硬脂基酯、(甲基)丙烯酸環 己酯、(曱基)丙烯酸異福基酯等(甲基)丙烯酸烷基酯類, (甲基)丙烯酸2-羥基乙酯 '(甲基)丙烯酸甘油酯、聚氧乙 烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子 之(曱基)丙烯酸酯類,(曱基)丙烯腈等含腈之單體,甲基 乙烯基醚、乙基乙烯基醚、丙基乙烯基醚等乙烯基醚類, 乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯 等酸乙烯酯類,乙烯、丙烯、異戊二烯、丁二烯等不飽和 烴,(甲基)丙烯酸三氟曱酯、(曱基)丙烯酸五氟乙酯、氣 乙烯、氟乙烯、氣苯乙烯等含鹵素之單體等。 作為上述交聯性單體,例如可列舉:四羥曱基甲烷四 (曱基)丙烯酸酯、四羥甲基曱烷三(甲基)丙烯酸酯、四羥 曱基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(曱基)丙烯 159121.doc -12-201222558 A second conductive layer can be provided on the surface 12a of the copper-tin layer 12 in the conductive particles 11. Further, a second conductive layer may be provided on the surface of the substrate particles, and a copper-tin layer may be provided on the second conductive layer. That is, the second conductive layer may be disposed between the substrate particles and the copper-tin layer. In the figure, the cross-sectional graph is not the conductive particles of the fourth embodiment of the present invention. The conductive particles 7 i which are not in the middle include the substrate particles 2 and the copper-tin layer 72 provided on the surface 2a of the substrate particles 2. The steel-tin layer 72 has a second region and a region thinner than the i-th region. The copper-tin layer 72 has a thickness unevenness of 0. The base material particles include resin particles, inorganic particles, organic-inorganic hybrid particles, and metal particles. The substrate particles are preferably resin particles formed of a resin. When the electrodes are connected, the conductive particles are usually placed between the electrodes, and the conductivity is usually made. If the substrate particles are resin particles, the conductive particles are easily deformed by compression. The contact area between the conductive particles and the electrodes Increase. Therefore, the conduction reliability between the electrodes can be improved. As the resin for forming the above resin particles, various organic substances can be preferably used. As a tree for forming the above-mentioned resin particles, for example, polyethylene, polypropylene, polystyrene, polyethylene oxide, polyvinylidene chloride, polypropylene, polyisobutylene, polybutylene, etc. can be used. , acrylic resin such as polymethyl methacrylate, polyacrylic acid f ester, polyalkylene terephthalate, polyfluorene, polycarbonate, polyamide, phenol formaldehyde resin, trimeric murine formaldehyde resin, benzene And guanamine formaldehyde resin, urea formaldehyde resin and the like. Example 159121.doc 201222558 For example, by polymerizing one or more kinds of polymerizable monomers having ethylenic unsaturation &, it is possible to design and synthesize resin particles having physical properties suitable for any compression of a conductive material. . In the case where the monomer having an ethylenically unsaturated group is polymerized to obtain the above resin particles, examples of the monomer having an ethylenically unsaturated group include a non-crosslinkable monomer and a crosslinkable monomer. Examples of the non-crosslinkable monomer include a styrene monomer such as styrene or &methyl styrene, and a carboxyl group such as (mercapto)acrylic acid, cis-dicarboxylic acid, and maleic anhydride. Monomer, methacrylate (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, (a Base) lauryl acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isofuyl (mercapto) acrylate, etc. (methyl) Alkyl acrylates, oxygenated atoms such as 2-hydroxyethyl (meth)acrylate glyceryl (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate (曱Acrylates, nitrile-containing monomers such as (fluorenyl) acrylonitrile, vinyl ethers such as methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, vinyl acetate, vinyl butyrate , vinyl laurate, vinyl stearate and other acid vinyl esters, ethylene, propylene, different An unsaturated hydrocarbon such as pentadiene or butadiene, a trifluorodecyl (meth)acrylate, a pentafluoroethyl (meth)acrylate, a halogen-containing monomer such as ethylene oxide, vinyl fluoride or gas styrene. Examples of the crosslinkable monomer include tetrakis(hydroxy)methanetetrakis(meth)acrylate, tetramethyloldecanetri(meth)acrylate, and tetrahydroxymethylmethanedi(meth)acrylate. Ester, trimethylolpropane tris(mercapto)propene 159121.doc -12-
201222558 酸醋、二季戊四醇六(曱基)丙烯酸酯、二季戊四醇五(甲 基)丙烯酸酯、三(曱基)丙烯酸甘油酯、二(曱基)丙烯酸甘 油酯、(聚)乙二醇二(曱基)丙烯酸酯、(聚)丙二醇二(曱基) 丙烯酸酯、(聚)二(甲基)丙烯酸四亞曱基酯、1,4-丁二醇二 (甲基)丙烯酸酯等多官能(曱基)丙烯酸酯類,(異)氰尿酸三 烯丙酯、偏苯三甲酸三烯丙酯、二乙烯基苯、鄰苯二甲酸 二烯丙酯、二烯丙基丙烯醯胺、二烯丙基醚、丫_(甲基)丙 烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基笨乙烯、乙 烯基二甲氧基矽烷等含矽烷之單體等。 可藉由利用公知之方法使上述具有乙烯性不飽和基之聚 合性單體聚合而獲得上述樹脂粒子。作為此方法,例如可 列舉·於自由基聚合起始劑之存在下進行懸浮聚合之方 法’及使單體與自由基聚合起始劑—起膨潤而使非交聯之 種粒子聚合之方法等。 於上述基材粒子為無機粒子或有機無機混合粒子之情形 =作為用以形成基材粒子之無機物,可列舉二氧化石夕及 ,黑等。作為由上述二氧切所形成之粒子並無特別限 疋例如可列舉使具有2個以上之水解性院氧基之石夕化合 物水解而形成交聯聚合物粒 : 獲得之粒子。 精田視需要進盯焙燒而 於上逃基材粒子為金屬粒子情 工 丁夂度浴時,作為用以形成該 金屬拉子之金屬’可列舉銀 3 剽螺矽、金及鈦等。但 疋,較佳為基材粒子並非金屬粒子。 上述基材粒子之平均粒徑較佳為卜100 _之範圍内。若 159121.doc 201222558 基材粒子之平均粒徑為1 μηι以上,則可進一步提高電極間 之導通了罪性。若基材粒子之平均粒徑為10 0 μπι以下,則 可使電極間之間隔變窄。基材粒子之平均粒徑之更佳之下 限為2 μΠ1,更佳之上限為50 μηι、進而較佳之上限為30 μιη、尤佳之上限為5 μηι。 上述平均粒徑表示數量平均粒徑。該平均粒徑例如可使 用庫爾特a十數器(Beckman c〇uher公司製造)而測定。 關於上述鋼-錫層’外表面可為平滑之球狀,於存在鱗 片狀或板狀金屬小片所形成之凹凸之形態下,外表面亦可 為 长狀又,上述銅-錫層可為單層之導電層,亦可 為積層有複數層鱗片狀或板狀導電性物質之導電層。 上述銅·錫層之維氏硬度㈣較佳為1GG以上,較佳為 500以下1上述銅·錫層之維氏硬度為上述下限以上及上 述上限以下’則更難產 座玍導電層之裂痕,且連接構造體 中之導通可靠性進一步提高。 上述銅-錫層之熔點較 L 、. 住马55〇c以上,更佳為00(TC以 上。上述鋼-錫層之炼 级 * 上限並無特別限定。若上述銅· 熱變形及㈣。 上,則可抑制銅·錫層之過度之201222558 Sour vinegar, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, glyceryl tris(decyl) acrylate, glyceryl bis(decyl) acrylate, (poly)ethylene glycol bis ( Multifunctional such as fluorenyl acrylate, (poly)propylene glycol bis(indenyl) acrylate, (poly)bis(meth)acrylic acid tetradecyl methacrylate, 1,4-butanediol di(meth)acrylate (fluorenyl) acrylates, triallyl (iso) cyanurate, triallyl trimellitate, divinylbenzene, diallyl phthalate, diallyl acrylamide, two A monomer containing decane such as allyl ether, 丫_(meth) propylene methoxy propyl trimethoxy decane, trimethoxy fluorenyl phenyl vinyl or vinyl dimethoxy decane. The above resin particles can be obtained by polymerizing the above-mentioned polymerizable monomer having an ethylenically unsaturated group by a known method. As such a method, for example, a method of performing suspension polymerization in the presence of a radical polymerization initiator, and a method of swelling a monomer and a radical polymerization initiator to polymerize non-crosslinked particles are exemplified. . In the case where the substrate particles are inorganic particles or organic-inorganic hybrid particles, the inorganic material used to form the substrate particles may be, for example, sulphur dioxide or black. The particles formed by the above-mentioned dioxotomy are not particularly limited, and examples thereof include hydrolysis of a compound having two or more hydrolyzable anthracene groups to form crosslinked polymer particles: obtained particles. In the case of the metal particles, the metal particles are used as the metal particles to form the metal pull, and silver 3 ruthenium, gold, titanium, and the like are exemplified. However, it is preferred that the substrate particles are not metal particles. The average particle diameter of the substrate particles is preferably in the range of 100 Å. If the average particle diameter of the substrate particles is 1 μηι or more, the conductivity between the electrodes can be further improved. When the average particle diameter of the substrate particles is 10 0 μm or less, the interval between the electrodes can be narrowed. The average particle diameter of the substrate particles is preferably 2 μΠ1, more preferably 50 μηι, further preferably 30 μηη, and particularly preferably 5 μηι. The above average particle diameter represents a number average particle diameter. The average particle diameter can be measured, for example, by using a Coulter a ten-number device (manufactured by Beckman C〇uher Co., Ltd.). The outer surface of the steel-tin layer may be a smooth spherical shape, and the outer surface may be elongated in the form of irregularities formed by scaly or plate-shaped metal pieces, and the copper-tin layer may be single. The conductive layer of the layer may also be a conductive layer laminated with a plurality of layers of scaly or plate-like conductive material. The Vickers hardness (four) of the copper/tin layer is preferably 1 GG or more, preferably 500 or less. 1 The Vickers hardness of the copper/tin layer is less than or equal to the lower limit and less than the upper limit, and it is more difficult to produce cracks in the conductive layer. Moreover, the conduction reliability in the connection structure is further improved. The copper-tin layer has a melting point of more than L, and a horse is 55 〇c or more, more preferably 00 (TC or more. The upper limit of the steel-tin layer is not particularly limited. The copper is thermally deformed and (4). On, it can suppress the excessive copper and tin layers.
==之熔點係利用Dsc(示差掃描熱量測定,SII EXSTARX撕·〇」)而測得之值。 上述銅-錫層亦可具有第 第2區域。上述鋼-錫層二及厚度較第1區域薄之 倍’亦可為U倍以上,;^厚度可超過最小厚度之1 ’、可為1.5倍以上,亦可為2倍以 I5912I.docThe melting point of == is the value measured by Dsc (differential scanning calorimetry, SII EXSTARX tearing). The copper-tin layer may have a second region. The steel-tin layer 2 and the thickness thinner than the first region may be U times or more, and the thickness may exceed 1 ' of the minimum thickness, may be 1.5 times or more, or may be 2 times to I5912I.doc
• 14_ S 201222558 若上述鋼-錫層之厚度不均較大,則於使用含有導電 性粒子及黏合樹脂之異向性導電材料而獲得連接構造體 時,有效地去除導電性粒子與電極間之黏合樹脂。因此, 所獲得之連接構造體中之導通可靠性提高。再者,藉由利 用下述物理性或機械性混成法形成上述銅_錫層而容易使 厚度不均變大。 上述銅-錫層之平均厚度較佳為10〜1000 nm之範圍内。 銅-錫層之平均厚度之更佳之下限為2〇 nm、進而較佳之下 限為50 nm ’更佳之上限為_ nm、進而較佳之上限為5⑼ ⑽、尤佳之上限為3〇〇 nm。若銅_錫層之平均厚度為上述 下限以上,則可進一步提高導電性粒子之導電性。若銅_ 錫層之平均厚度為上述上限以下,則基材粒子與銅-錫層 之熱膨脹係數之差減小,銅_錫層難以自基材粒子剝離。 作為為了形成上述銅_錫層而於基材粒子之表面上形成 銅層之方法,可列舉:藉由非電解錢敷而形成銅層之方 法、以及藉由電錢而形成銅層之方法等。作為為了形成 銅-錫層而於例如銅層之表面上形成錫層之方法,可列 舉:藉由非電解鑛敷而形成錫層之方法、以及藉由電鐘而 形成錫層之方法等。又’作為形成上述銅_錫層之較佳之 方法’可使用物理性或機械性之形成方法,亦可使用物理 性或機械性混成法。於物理性或機械性混成法中 混合器等。 使用 於不阻礙本發明之目 除銅與錫以外之其他金 的之範圍内,上述鋼-錫層可含有 屬。作為上述其他金4,例如可列 159121.doc 201222558 舉.金、銀、鈀、鉑、鈀、鋅、鐵、鉛、鋁、鈷、銦' 鎳、鉻、鈦、銻、鉍、鉈、鍺、鎘、鎢、矽及摻錫氡化銦 (1丁〇)等。 於上述銅-錫層含有上述其他金屬之情形時,銅_錫層整 體中之上述其他金屬之含量較佳為2〇重量%以下、更佳為 1〇重量%以下、進而較佳為5重量%以下、尤佳Si重量% 以下。 上述導電性粒子亦可具有上述第2導電層。該第2導電層 係與銅-錫層不同之導電層。第2導電層較佳為金層、鎳 層、鈀層、銅層或含有錫與銀之合金層,更佳為鈀層或金 層’進而較佳為鈀層。上述第2導電層較佳為設置於銅-錫 層之表面上。 上述第2導電層之平均厚度較佳為5 以上。若上述第2 導電層之平均厚度為5 nnm上’則容易制上述第2導電 層進行均勻之被覆。於上述第2導電層設置於上述銅·錫層 之表面上之情形時,導電性粒子對於外部環境之耐受性提 高’銅-錫層難以氧化,難以引起由銅_錫層中之銅與構成 上述第2導電層之金屬(料)間之賈法尼反應所導致的鋼之 腐m ’可進-步提高導電性粒子之導電層整體之導 電性。 上述第2導電層之平均厚度較佳為5〇〇⑽以下。若上述 第2導電層之平均厚度為_⑽以下,則導電性粒子之成 本降低。進而’可減少構成上述第2導電層之金屬之使用 量’因此可降低環境負荷。 159121.doc• 14_ S 201222558 When the thickness of the steel-tin layer is not uniform, when the connecting structure is obtained by using an anisotropic conductive material containing conductive particles and a binder resin, the conductive particles and the electrode are effectively removed. Adhesive resin. Therefore, the conduction reliability in the obtained connection structure is improved. Further, by forming the copper-tin layer by the following physical or mechanical mixing method, it is easy to increase the thickness unevenness. The average thickness of the above copper-tin layer is preferably in the range of 10 to 1000 nm. A lower limit of the average thickness of the copper-tin layer is 2 〇 nm, and more preferably 50 nm. The upper limit is _ nm, and the upper limit is preferably 5 (9) (10), and the upper limit is preferably 3 〇〇 nm. When the average thickness of the copper-tin layer is at least the above lower limit, the conductivity of the conductive particles can be further improved. When the average thickness of the copper-tin layer is less than or equal to the above upper limit, the difference in thermal expansion coefficient between the substrate particles and the copper-tin layer is small, and the copper-tin layer is difficult to peel off from the substrate particles. A method of forming a copper layer on the surface of the substrate particles in order to form the copper-tin layer includes a method of forming a copper layer by electroless deposition, and a method of forming a copper layer by electricity money. . As a method of forming a tin layer on the surface of, for example, a copper layer in order to form a copper-tin layer, there may be mentioned a method of forming a tin layer by electroless ore plating, a method of forming a tin layer by an electric clock, and the like. Further, as a preferred method of forming the above-mentioned copper-tin layer, a physical or mechanical formation method may be used, or a physical or mechanical mixing method may be used. In the physical or mechanical mixing method, mixers, etc. The steel-tin layer may contain genus insofar as it does not inhibit the gold of the present invention other than copper and tin. As the other gold 4, for example, it can be listed as 159121.doc 201222558. Gold, silver, palladium, platinum, palladium, zinc, iron, lead, aluminum, cobalt, indium 'nickel, chromium, titanium, lanthanum, cerium, lanthanum, cerium , cadmium, tungsten, antimony and tin-doped indium telluride (1 butyl) and so on. When the copper-tin layer contains the other metal, the content of the other metal in the copper-tin layer as a whole is preferably 2% by weight or less, more preferably 1% by weight or less, and still more preferably 5 parts by weight. Below %, especially below Si% by weight. The conductive particles may have the second conductive layer. The second conductive layer is a conductive layer different from the copper-tin layer. The second conductive layer is preferably a gold layer, a nickel layer, a palladium layer, a copper layer or an alloy layer containing tin and silver, more preferably a palladium layer or a gold layer, and further preferably a palladium layer. Preferably, the second conductive layer is provided on the surface of the copper-tin layer. The average thickness of the second conductive layer is preferably 5 or more. When the average thickness of the second conductive layer is 5 nnm or more, the second conductive layer is easily formed to be uniformly coated. When the second conductive layer is provided on the surface of the copper-tin layer, the resistance of the conductive particles to the external environment is improved. 'The copper-tin layer is hard to be oxidized, and it is difficult to cause copper and copper in the copper-tin layer. The corrosion of the steel caused by the japany reaction between the metals (materials) constituting the second conductive layer can further improve the electrical conductivity of the entire conductive layer of the conductive particles. The average thickness of the second conductive layer is preferably 5 〇〇 (10) or less. When the average thickness of the second conductive layer is _(10) or less, the cost of the conductive particles is lowered. Further, the amount of metal constituting the second conductive layer can be reduced, so that the environmental load can be reduced. 159121.doc
S •16- 201222558 上述紐層之平均厚度之較佳之下限為丨〇 ,更佳之上 PF為400 nm °右纪層之平均厚度為1〇 ηιη以上,則可進一 步k南導電性粒子之導電性。 如導電性粒子11般’本發明之導電性粒子較佳為於表面 具有突起。上述銅-錫層之維氏硬度(Hv)較佳為1〇〇以上, 且較佳為上述導電性粒子於表面具有突起。導電性粒子較 佳為於導電層之表面具有突起,進而較佳為於鋼-錫層或 上述第2導電層(鈀層等)之表面具有突起。上述突起較佳為 複數個。大多情況下於由導電性粒子連接之電極之表面形 成有氧化覆膜。於使用具有突起之導電性粒子之情形時, 藉由於電極間配置並壓接導電性粒子而利用突起有效地去 除上述氧化覆m。因&,可更確實地使電極與導電性粒子 之導電層接觸,可降低電極間之連接電阻。進而,於導電 性粒子於表面具備絕緣性物f (絕緣性樹脂層或絕緣性粒 子等)之情形時,或於導電性粒子分散於樹脂中而用作異 向性導電材料之情形時’ #由導電性粒子之突#,可有效 地去除導電性粒子與電極間之樹脂H可提高電極間 之導通可靠性。 作為於上述導電性粒子之表面形成突起之方法,可列 舉:使芯物質附著於基材粒子之表面後’藉由非電解鑛敷 而形成導電層之方法;以及藉由非電解鐘敷而於基柯粒子 之表面形成導電層後,使芯物質附著,進而藉由非電解鑛 敷而形成導電層之方法等β x 作為使芯物質附著於上述基材粒子之表面之方法,例如 159l21.doc 17 201222558 可列舉:於基材粒子之分散液中添加成為芯物質之導電性 物質,藉由例如凡得瓦耳力而使芯物質集聚、附著於 粒子的表面之方法;以及於裝有基材粒子之容器中添:成 為芯物質之導電性物質,藉由容器之旋轉等之機械性作用 而使芯物質附著於基材粒子的表面之方法等。其十,為了 易控制附著之芯物質之量,較佳為使芯物質集聚、附著於 刀政液中之基材粒子的表面之方法。 作為構成上述芯物質之導電性物f,例如可列舉 金屬之氧化物、石墨等導電性非金屬及導電性聚合。 作為導電性聚合物,可列舉聚乙块等。其中 導電性,故而較佳為金屬。 、了扣同 .作為上述金屬,例如可列舉:金、銀、鋼、始、鋅、 鐵、錯、錫、鋁、姑、銦、鎮、 犛 ’、·鈦、銻、鉍、鍺及鎘 =屬’以及錫·錯合金、錫-鋼合金、錫-銀合金及錫冬 銀合金等由2種類以上之金屬 ’° 屬所構成之合金等。其中,較 =,、銀或金。構成上述芯物質之金屬可與構成上 =電層之金屬相同,亦可不同。又,作為 化物,可列舉氧化銘、二氧化石夕及氧化錯等。 氣 如導電性粒子U般,本發明之導電性粒子較佳 置於上述鋼-錫層或鈀声 備配 層之表面上之絕緣性物質。於此情 形時,若將導電性粒子用於 之電極間之短路。具體而言,於:觸連妾 時,在複數個電極間存在絕% 广子 向上相鄰之電極間之短路而並非上下電極間之短路: 15912I.docS •16- 201222558 The lower limit of the average thickness of the above-mentioned layer is 丨〇, and the upper PF is 400 nm. The average thickness of the right layer is 1〇ηηη or more, which can further improve the conductivity of the conductive particles. . The conductive particles of the present invention preferably have protrusions on the surface as in the case of the conductive particles 11. The Vickers hardness (Hv) of the copper-tin layer is preferably 1 Å or more, and it is preferred that the conductive particles have protrusions on the surface. The conductive particles preferably have protrusions on the surface of the conductive layer, and further preferably have protrusions on the surface of the steel-tin layer or the second conductive layer (palladium layer or the like). The above protrusions are preferably plural. In many cases, an oxide film is formed on the surface of the electrode to which the conductive particles are connected. In the case where conductive particles having protrusions are used, the above-described oxide coating m is effectively removed by the protrusions by arranging and pressing the conductive particles between the electrodes. Since &, the electrode can be more reliably brought into contact with the conductive layer of the conductive particles, and the connection resistance between the electrodes can be reduced. Further, when the conductive particles are provided with an insulating material f (an insulating resin layer or an insulating particle or the like) on the surface, or when the conductive particles are dispersed in a resin and used as an anisotropic conductive material, From the protrusion of the conductive particles, the resin H between the conductive particles and the electrode can be effectively removed, and the conduction reliability between the electrodes can be improved. The method of forming a protrusion on the surface of the conductive particle includes a method of forming a conductive layer by electroless ore deposition after attaching a core substance to a surface of the substrate particle, and a method of forming a conductive layer by electroless plating; After the surface of the base particle forms a conductive layer, the core material is adhered, and a method of forming a conductive layer by electroless ore is used as a method of attaching the core substance to the surface of the substrate particle, for example, 159l21.doc 17 201222558: a method of adding a conductive material to be a core material to a dispersion of a substrate particle, and concentrating and adhering the core material to the surface of the particle by, for example, van der Waals force; In the container, a method of adhering the core material to the surface of the substrate particles by a mechanical action such as rotation of the container is added to the conductive material which is a core material. Further, in order to easily control the amount of the core material to be attached, a method of collecting the core material and adhering it to the surface of the substrate particles in the knife solution is preferred. Examples of the conductive material f constituting the core material include conductive oxides such as metal oxides and graphite, and conductive polymerization. Examples of the conductive polymer include a polyethylene block and the like. Among them, conductivity is preferred, and metal is preferred. As the above-mentioned metal, for example, gold, silver, steel, zinc, iron, iron, aluminum, australis, indium, bismuth, bismuth, titanium, strontium, strontium, strontium, and cadmium may be mentioned. = an alloy composed of two or more types of metals, such as a tin alloy, a tin-steel alloy, a tin-silver alloy, and a tin-silver alloy. Among them, more than =, silver or gold. The metal constituting the core material may be the same as or different from the metal constituting the upper electric layer. Further, examples of the compound include oxidation, sulphur dioxide, and oxidation. As the conductive particles U, the conductive particles of the present invention are preferably an insulating material placed on the surface of the above-mentioned steel-tin layer or palladium sound-matching layer. In this case, conductive particles are used for the short circuit between the electrodes. Specifically, when the contact is connected, there is an absolute % between the plurality of electrodes, and a short circuit between the adjacent electrodes is not a short circuit between the upper and lower electrodes: 15912I.doc
-18- 201222558 者’於電極間之連接時,藉由以2個電極對導電.性粒子加 壓’可容易地去除導電性粒子之導電層與電極間之絕緣性 物#。於導電性粒子於鈀層之表面具有突起之情形時,可 更谷易地去除導電性粒子之導電層與電極間之絕緣性物 質。上述絕緣性物質較佳為絕緣性樹脂層或絕緣性粒子。 該絕緣性粒子較佳為絕緣性樹脂粒子。 作為上述絕緣性物質之具體例,可列舉:聚烯烴類、 (曱基)丙烯酸酯聚合物、(曱基)丙烯酸酯共聚物' 嵌段聚 合物、熱塑性樹脂、熱塑性樹脂之交聯物、熱硬化性樹脂 及水溶性樹脂等。 作為上述聚烯烴類,可列舉聚乙烯、乙烯_乙酸乙烯酯 共聚物及乙烯-丙烯酸酯共聚物等。作為上述(曱基)丙烯酸 酯聚合物,可列舉聚(曱基)丙烯酸甲酯、聚(甲基)丙烯酸 乙酯及聚(曱基)丙烯酸丁酯等。作為上述嵌段聚合物,可 列舉聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(Styrene_ Butadien,苯乙烯_ 丁二烯)型苯乙烯_ 丁二烯嵌段共聚物、 及 SBS(Styrene-Butadien-Styrene,苯乙烯 _ 丁二烯-苯乙烯) 型苯乙烯-丁二烯嵌段共聚物、以及該等之氫化物等。作 為上述熱塑性樹脂,可列舉乙烯聚合物及乙烯共聚物等。 作為上述熱硬化性樹脂,可列舉環氧樹脂、酚系樹脂及三 聚氰胺樹脂等。作為上述水溶性樹脂,可列舉聚乙烯醇、 聚丙烯酸、聚丙烯醯胺、聚乙烯吡咯烷酮、聚氧化乙烯及 甲基纖維素等。本發明之導電性粒子更佳為具備附著於上 述導電層之表面之絕緣性粒子。於此情形時,若將導電性 159121.doc •19- 201222558 粒子用於電極間之連接,則不僅可更進一步防止於横方向 上鄰接之電極間之短路,而且可更進一步降低連接之上下 之電極間之連接電阻。 作為使絕緣性粒子附著於上述導電層之表面之方法,可 列舉化學性方法及物理性或機械性方法等。作為上述化學 性方法,例如可列舉如下者:如wo 2003/25955A1中所揭 不般,藉由利用凡得瓦耳力或靜電力之雜絮凝法而使絕緣 性粒子附著於金屬表面粒子之導電層上’進而視需要進行 化子鍵結》作為上述物理性或機械性方法,可列舉喷霧乾 燥法、混成法、靜電附著法、喷霧法、浸鍍法及利用真空 蒸鍍之方法等。其中,就絕緣性物質難以脫離而言,較佳 為經由化學鍵結而使絕緣性物質附著於上述導電層之表面 之方法。 上述絕緣性粒子之粒徑較佳為導電性粒子之粒徑之1/5 以下。於此情形時,絕緣性粒子之粒徑未過大,更確實地 貫現導電層之電性連接。於絕緣性粒子之粒徑為導電性粒 子之粒徑之1/5以下之情形時,藉由雜絮凝法而使絕緣性 粒子附著時,可使絕緣性粒子有效地吸附於導電性粒子之 表面上。又,上述絕緣性粒子之粒徑較佳為5 nm以上、更 佳為10 nm以上,較佳為1000 nm以下、更佳為5〇〇 nm& 下。若上述絕緣性粒子之粒徑為上述下限以上,則鄰接之 導電性粒子間之距離與電子之跳躍距離相比增大,變得難 以發生戌漏。若上述絕緣性粒子之粒徑為上述上限以下, 則於熱壓接時所需之壓力及熱量減小。-18-201222558 In the case of the connection between the electrodes, the insulating layer between the conductive layer of the conductive particles and the electrode can be easily removed by pressing the conductive particles with two electrodes. When the conductive particles have protrusions on the surface of the palladium layer, the insulating material between the conductive layers of the conductive particles and the electrodes can be removed more easily. The insulating material is preferably an insulating resin layer or insulating particles. The insulating particles are preferably insulating resin particles. Specific examples of the insulating material include polyolefins, (mercapto) acrylate polymers, (mercapto) acrylate copolymers, block polymers, thermoplastic resins, crosslinked products of thermoplastic resins, and heat. A curable resin, a water-soluble resin, and the like. Examples of the polyolefins include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylate copolymer. Examples of the above (fluorenyl) acrylate polymer include poly(methyl) acrylate, poly(meth) acrylate, and poly(decyl) butyl acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB (Styrene® Butadien) type styrene-butadiene block copolymer, and SBS (Styrene- Butadien-Styrene, styrene-butadiene-styrene type styrene-butadiene block copolymer, and such hydrides and the like. Examples of the thermoplastic resin include an ethylene polymer and an ethylene copolymer. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and a melamine resin. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polypropylene decylamine, polyvinylpyrrolidone, polyethylene oxide, and methyl cellulose. The conductive particles of the present invention more preferably have insulating particles attached to the surface of the conductive layer. In this case, if the conductive 159121.doc •19-201222558 particles are used for the connection between the electrodes, not only the short circuit between the adjacent electrodes in the lateral direction can be further prevented, but also the connection can be further lowered. The connection resistance between the electrodes. As a method of attaching the insulating particles to the surface of the above-mentioned conductive layer, a chemical method, a physical or mechanical method, or the like can be given. As the above-mentioned chemical method, for example, as described in WO 2003/25955 A1, the insulating particles are attached to the conductive layer of the metal surface particles by a flocculation method using a van der Waals force or an electrostatic force. Further, as the physical or mechanical method, the above-mentioned physical or mechanical method may, for example, be a spray drying method, a mixing method, an electrostatic adhesion method, a spray method, a dip plating method, or a vacuum vapor deposition method. Among them, in the case where the insulating material is hard to be separated, it is preferred to adhere the insulating material to the surface of the conductive layer via chemical bonding. The particle diameter of the insulating particles is preferably 1/5 or less of the particle diameter of the conductive particles. In this case, the particle diameter of the insulating particles is not excessively large, and the electrical connection of the conductive layers is more surely achieved. When the particle diameter of the insulating particles is 1/5 or less of the particle diameter of the conductive particles, when the insulating particles are adhered by the flocculation method, the insulating particles can be efficiently adsorbed on the surface of the conductive particles. on. Further, the particle diameter of the insulating particles is preferably 5 nm or more, more preferably 10 nm or more, more preferably 1000 nm or less, still more preferably 5 Å nm & When the particle diameter of the insulating particles is at least the above lower limit, the distance between adjacent conductive particles is increased as compared with the jumping distance of electrons, and it is difficult to cause leakage. When the particle diameter of the insulating particles is not more than the above upper limit, the pressure and heat required for thermocompression bonding are reduced.
159121.doc S 201222558 上述絕緣性粒子之粒徑之cv(coefficient of Variation, 分佈係數)值較佳為20%以下。若cv值為2〇%以下,則導電 性粒子之被覆層之厚度變均勻,於電極間進行熱壓接時易 均勻地施加壓力,難以產生導通不良。再者,上述粒徑之 CV值係藉由下述式而算出。 粒徑之C V值(%)=粒徑之標準偏差/平均粒徑x丨〇〇 對於粒杻分佈,被覆金屬表面粒子前可利用粒度分佈計 等進行測定’被覆後可利用SEM(scanning Electronic159121.doc S 201222558 The cv (coefficient of variation) value of the particle diameter of the insulating particles is preferably 20% or less. When the cv value is 2% or less, the thickness of the coating layer of the conductive particles becomes uniform, and when the electrodes are thermocompression-bonded, pressure is uniformly applied, and conduction failure is less likely to occur. Further, the CV value of the above particle diameter is calculated by the following formula. C V value (%) of the particle diameter = standard deviation of the particle diameter / average particle diameter x 丨〇〇 For the particle enthalpy distribution, the surface of the coated metal surface can be measured by a particle size distribution meter or the like. SEM can be used after coating (scanning electronic
Microscope,掃描電子顯微鏡)照片之圖像解析等進行測 定。 再者,為了使導電性粒子之導電層露出,絕緣性物質之 被覆率較佳為5%以上,較佳為70%以下。上述絕緣性物質 之被覆率係由絕緣性物質被覆之部分占金屬表面粒子之表 面積整體的面積。若上述被覆率為5%以上,則鄰接之導 電性粒子彼此藉由絕緣性物質而更確實地絕緣。若上述被 覆率為70%以下,則於電極之連接時無需施加必要以上之 熱及Μ力,抑制由去除之絕緣性物質導致之黏合樹脂之性 能之下降。 作為上述絕緣性粒子,並無特別限定,可使用公知之無 機粒子及有機高分子粒子。作為上述無機粒子,可列舉氧 化紹、二氧化矽及氧化鍅等絕緣性無機粒子。 上述有機高分子粒子較佳為使一種或二種以上具有不飽 和雙鍵之單體(共)聚合而成之樹脂粒子。作為上述具有不 飽和雙鍵之單體,可列舉:(甲基)丙烯酸,(甲基)丙烯酸 159121.doc •21 - 201222558 甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯 酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸縮水甘 油酯、四羥甲基甲烷四(甲基)丙烯酸酯、三羥甲基丙烷三 (曱基)丙烯酸酯、三(甲基)丙烯酸甘油酯、(聚)乙二醇二 (曱基)丙烯酸酯、(聚)丙二醇二(曱基)丙烯酸酯、丨,4-丁二 醇一(甲基)丙稀酸醋等(甲基)丙稀酸S旨類,乙稀基趟類, 氣乙稀’本乙稀、一乙稀本等苯乙稀系化合物,丙埽腈 等。其中可較佳地使用(曱基)丙烯酸酯類。 上述絕緣性粒子為了藉由雜絮凝而附著於導電性粒子之 導電層’較佳為具有極性官能基。作為該極性官能基,例 如可列舉銨基、銃基、磷酸基及羥基矽烷基等。上述極性 官能基可藉由使具有上述極性官能基及不飽和雙鍵之單體 共聚合而導入。 作為具有上述銨基之單體,可列舉甲基丙烯酸N,N_二甲 胺基乙酯、N,N-二甲胺基丙基丙烯醯胺及N,N,N_三甲基· 甲基丙烯醯氧基乙基氯化銨等。作為具有上述銃基之 單體,可列舉甲基丙烯酸苯基二甲基銃甲基硫酸鹽等。作 為具有上述磷酸基之單體,可列舉酸性甲基丙烯酸磷醯氧 土乙@曰•性甲基丙婦酸構醯氧基丙g旨、酸性磷醯氧基聚 氧乙埽醇單甲基丙稀g线及酸性填醯氧基聚氧丙烯醇單甲 基丙稀酸醋等。作為具有上述羥基矽烷基之單體,可列舉 乙烯三羥基矽烷及3_甲基丙烯醯氧基丙基三羥基矽烷等。 、作為將極性官能I導入1述絕緣性粒子之表面之其他方 法可歹4舉.使用具有極性基之自自基起始劑作為使上述 159121.doc -22- 201222558 具有不飽和雙鍵之單體聚合時之起始劑的方法。作為上述 自由基起始劑,例如可列舉2,21_偶氮雙{2_甲基卜羥 基丁基)]-丙醯胺}、2,2,_偶氮雙[2_(2_咪唾淋_2_基)丙院】及 2,2-偶氮雙(2-脎基丙燒)及該等之鹽等。 (異向性導電材料) 本發明之異向性導電材料含有上述導電性粒子及黏合樹 脂。 ' 上述黏合樹脂並無特別限定。作為上述黏合樹脂,通常 使用絕緣性樹脂。作為上述黏合樹脂,例如可列舉乙烯樹 脂、熱塑性樹脂、硬化性樹脂、熱塑性嵌段共聚物及彈性 體等。上述黏合樹脂可僅使用1種,亦可併用2種以上。 作為上述乙烯樹脂,例如可列舉乙酸乙烯酯樹脂、丙烯 酉文系樹脂及苯乙烯樹脂等。作為上述熱塑性樹脂,例如可 列舉聚埽烴樹脂、乙稀.乙酸乙稀醋共聚物及聚醯胺樹脂 等。作為上述硬化性樹脂,例如可列舉環氧樹脂、胺基甲 酉Sg樹知、聚醯亞胺樹脂及不飽和聚醋樹脂等。再者,上 述硬化性樹脂可為常溫硬化性樹脂、熱硬化性樹脂、光硬 化性樹脂或濕氣硬化性樹脂^上述硬化性樹脂亦可與硬化 劑併用。作為上述熱塑性嵌段共聚物,例如可列舉苯乙 烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯_異戊二烯_笨乙烯 嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物之氫化物 及笨乙烯-異戊二烯_苯乙烯嵌段共聚物之氫化物等。作為 上述+彈性體,例如可列舉苯乙烯_丁二烯共聚橡膠及丙烯 猜-苯乙烯嵌段共聚橡膠等。 15912l.doc -23· 201222558 上述異向性導電材料除含有上述導電性粒子及上述黏合 樹脂以外’亦可含有例如填充劑、增量劑、軟化劑、塑化 劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定 劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃 劑等各種添加劑。 使上述導電性粒+分散於上述黏合樹脂中之方法並無特 別限定’可使用先前公知之分散方法。作為使上述導電性 粒子分散於上述黏合樹脂中之方法,例如可列舉:於上述 黏合樹脂中添加上述導電性粒子後,以行星式混合機等進 行混練而使其分散的方法;使用均質機等使上述導電性粒 子均句地分散於水或有機溶劑中後,添加於上述黏合樹脂 中’並以订星式混合機等進行混練而使其分散之方法;以 及以水或有機溶劑等將上述黏合樹脂稀釋後,添加上述導 電性粒子,並騎星式混合機等進行崎而使其分散之方 法等。 本發明之異向料電㈣可㈣異向性導電I*及異向性 導電膜。於本發明之異向性導電材料為異向性導電膜之情 形時’亦可於含有導電性粒子之異向性導電財積層不= 導電性粒子之膜。 就抑制於連接構造體中之連接部產生空隙而進—步提古 導通可靠性之觀點而言’上述異向性導電材料較佳:二 性導電膏。上述異向性導電材料較佳為,為異向性導電音 且以膏狀之狀態塗佈於連接對象構件之上表面者。 於上述異向性導電材料⑽重量%令,上述黏合樹脂之 159121.docMicroscope, scanning electron microscope) image analysis and the like are measured. Further, in order to expose the conductive layer of the conductive particles, the coverage of the insulating material is preferably 5% or more, preferably 70% or less. The coverage of the insulating material is such that the portion covered with the insulating material accounts for the entire area of the surface area of the metal surface particles. When the coverage is 5% or more, the adjacent conductive particles are more reliably insulated by the insulating material. When the coverage is 70% or less, it is not necessary to apply more than necessary heat and pressure to the connection of the electrodes, and the deterioration of the properties of the adhesive resin caused by the removed insulating material is suppressed. The insulating particles are not particularly limited, and known inorganic particles and organic polymer particles can be used. Examples of the inorganic particles include insulating inorganic particles such as oxidized, cerium oxide and cerium oxide. The organic polymer particles are preferably resin particles obtained by (co)polymerizing one or two or more monomers having an unsaturated double bond. Examples of the monomer having an unsaturated double bond include (meth)acrylic acid, (meth)acrylic acid 159121.doc •21 - 201222558 methyl ester, ethyl (meth)acrylate, and propyl (meth)acrylate. , (butyl) (meth)acrylate, 2-ethylhexyl (meth)acrylate, glycidyl (meth)acrylate, tetramethylol methane tetra(meth)acrylate, trimethylolpropane tri Mercapto) acrylate, tris(meth)acrylate, (poly)ethylene glycol di(decyl)acrylate, (poly)propylene glycol bis(indenyl)acrylate, anthracene, 4-butanediol- (Methyl) acrylic acid vinegar and the like (methyl) acrylic acid S, class of ethylene sulfonium, ethylene ethoxide, styrene, styrene and other styrene compounds. Among them, (fluorenyl) acrylates can be preferably used. The insulating particles preferably have a polar functional group for the conductive layer 'adhering to the conductive particles by the flocculation. Examples of the polar functional group include an ammonium group, a fluorenyl group, a phosphoric acid group, and a hydroxydecyl group. The above polar functional group can be introduced by copolymerizing a monomer having the above polar functional group and an unsaturated double bond. Examples of the monomer having the above ammonium group include N,N-dimethylaminoethyl methacrylate, N,N-dimethylaminopropyl acrylamide, and N,N,N-trimethyl·A. Acryloxyethyl ammonium chloride or the like. Examples of the monomer having the above mercapto group include phenyl dimethyl hydrazine methyl sulfate methacrylate. Examples of the monomer having the above-mentioned phosphoric acid group include acidic phosphatidylphosphonium oxychloride 曰 性 性 甲基 methyl methoxy methoxy methoxy ethoxy propyl acrylate, acidic phosphonium oxy ethoxylated monomethyl group A propylene g-line and an acid-filled oxy-polyoxypropylene alcohol monomethyl acrylate vinegar and the like. Examples of the monomer having the above hydroxyalkylalkyl group include ethylene trihydroxy decane and 3-methacryloxypropyl trihydroxy decane. As another method of introducing the polar functional I to the surface of the insulating particles, a self-based initiator having a polar group is used as a single one having the unsaturated double bond of the above 159121.doc -22-201222558. A method of starting a reagent during bulk polymerization. As the above-mentioned radical initiator, for example, 2,21-azobis{2_methyl-hydroxybutyl]]-propanamine}, 2,2,_azobis[2_(2_淋_2_基)丙院] and 2,2-azobis(2-mercaptopropene) and the salts thereof. (Anisotropic conductive material) The anisotropic conductive material of the present invention contains the above-mentioned conductive particles and a binder resin. The above binder resin is not particularly limited. As the above-mentioned binder resin, an insulating resin is usually used. Examples of the above-mentioned binder resin include an ethylene resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, and an elastomer. The above-mentioned adhesive resin may be used alone or in combination of two or more. Examples of the vinyl resin include a vinyl acetate resin, an acrylic resin, and a styrene resin. The thermoplastic resin may, for example, be a polyanthracene resin, a vinyl acetate, an ethylene acetate copolymer or a polyamide resin. Examples of the curable resin include an epoxy resin, an aminoguanidine Sg tree, a polyimide resin, and an unsaturated polyester resin. Further, the curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin or a moisture curable resin. The curable resin may be used in combination with a curing agent. Examples of the above thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-stupidene block copolymer, and a styrene-butadiene-styrene block. a hydride of a segment copolymer and a hydride of a stupid ethylene-isoprene-styrene block copolymer. Examples of the above-mentioned + elastomer include styrene-butadiene copolymer rubber and propylene guess-styrene block copolymer rubber. 15912l.doc -23· 201222558 The anisotropic conductive material may contain, for example, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, and a hardening catalyst, in addition to the conductive particles and the above-mentioned binder resin. Various additives such as coloring agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, lubricants, antistatic agents, and flame retardants. The method of dispersing the above-mentioned conductive particles + in the above-mentioned binder resin is not particularly limited. A previously known dispersion method can be used. In the method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin, for example, a method in which the conductive particles are added to the binder resin and then kneaded by a planetary mixer or the like is dispersed, and a homogenizer or the like is used. a method in which the conductive particles are uniformly dispersed in water or an organic solvent, and then added to the binder resin and kneaded by a star mixer or the like to be dispersed; and the above is carried out with water or an organic solvent. After the binder resin is diluted, the conductive particles are added, and a method such as a sagittal mixer or the like is carried out to disperse the particles. The anisotropic material (4) of the present invention can be (iv) anisotropic conductive I* and an anisotropic conductive film. When the anisotropic conductive material of the present invention is an anisotropic conductive film, it may be a film of an anisotropic conductive layer containing conductive particles other than the conductive particles. The above-mentioned anisotropic conductive material is preferably a secondary conductive paste from the viewpoint of suppressing generation of voids in the joint portion in the joined structure and further improving the reliability of conduction. The anisotropic conductive material is preferably an anisotropic conductive sound and is applied to the upper surface of the member to be joined in a paste state. In the above-mentioned anisotropic conductive material (10% by weight), the above adhesive resin is 159121.doc
-24- 201222558 $量較佳為10〜99.99重量%之範圍内。上述黏合樹脂之含 。量之更佳之下P艮為3 〇重4 %、⑼較佳之下限為5 〇重量 %、尤佳之下限為7〇重量% ,更佳之上限為99 9重量%。若 上述黏合樹脂之含量滿足上述下限及上限,則可將導電性 粒子有效地配置於電極間’可進—步提高電極間之導通可 靠性。 於上述異向性導電材料1〇〇重量%中,上述導電性粒子 之含量較佳為〇.〇1〜2〇重量%之範圍内。上述導電性粒子之 3里之更佳之下限為〇丨重量%,更佳之上限為1 〇重量%。 若上述導電性粒子之含量滿足上述下限及上限,則可進一 步提高電極間之導通可靠性。 (連接構造體) 藉由使用本發明t導電性粒+或含有該導電性粒子及黏 合樹脂之異向性導電材料將連接對象構件連接,可獲得連 接構造體。 上述連接構造體較佳為,具備第丨連接對象構件、第2連 接對象構件、及連接該第1、第2連接對象構件之連接部, 且該連接部藉由本發明之導電性粒子㈣成,或藉由含有 該導電性粒子及黏合樹脂之異向㈣㈣料㈣成者。於 使用導電性粒子之情形時,連接部本身為導電性粒子。 即,第1、帛2連接對象構件藉由導電性粒子而連接。 圖3中,模式性地以正面剖面圖表示使用本發明之一實 施形態之導電性粒子的連接構造體。 圖3所示之連接構造體21具備第i連接對象構件、第2 159121.doc •25· 201222558 連接對象構件23、連接第丨、第2連接對象構件22、23之連 接部24 ^連接部24係藉由使含有導電性粒子丨之異向性導 電材料硬化而形成。再者,圖3中,導電性粒子丨為了方便 圖示係以略圖表示。除了導電性粒子1,亦可使用導電性 粒子 11、61、71。 第1連接對象構件22於上表面22a上纟有複數個電極 22b。第2連接對象構件23於下表面仏上纟有複數個電極 23b電極22b及電極23b藉由1個或複數個導電性粒子j而 電性連接。因此,第1 '第2連接對象構件22、23藉由導電 性粒子1而電性連接。 上述連接構造體之製造方法並無特別限定。作為連接構 造體之製造m例’可列舉:於第丨連接對象構件與 第2連接對象構件間配置上述異向性導電材料而獲得積層 體後,對該積層體加熱及加壓之方法等。 上述加壓之壓力為9.8xl〇4〜4.9xl〇6 pa左右。上述加熱 之溫度為120〜22(TC左右。藉由使用本發明之導電性粒 子,即便施加此種壓力,亦難以於銅-錫層中產生較大之 裂痕。因此’可提高電極間之導通可靠性。 作為上述連接對象構件,具體而言可列舉:半導體晶 片、電容器及二極管等電子零件,以及印刷基板、可撓性 印刷基板及玻璃基板等電路基板等。 作為設置於上述連接對象構件上之電極,可列舉:金電 極、鎳電極、錫電極、鋁電極、銅電極、鉬電極及鎢電極 等金屬電極。於上述連接對象構件為可撓性印刷基板之情 159121.doc •26- 201222558 ;時上述電極較佳為金電極、錄電極、錫電極或銅電 極。於上述連接對象構件為玻璃基板之情形時,上述電極 較佳為鋁電極、鋼電極、鉬電極或鎢電極。再者,於上述 電極為紹電極之情料,可為僅由㈣成之電極,亦可為 i金屬氧化物層之表面上積層有铭層之電極。作為上述金 屬氧化物’可列舉摻雜有3價金屬元素之氧化銦及摻雜有3 價金屬元素之氧化鋅等。作為上述3價金屬元素,可列舉 Sn、A1 及 〇3等。 若列舉本發明之導電性粒子之其他使用形態,則亦可使 用導電性粒子作為用以進行構成液晶顯示元件之上下基板 間之電性連接的導通材料。存在:使導電性粒子混合並分 散於熱硬化性樹脂或熱uv(ultravi〇let,紫外線)併用硬化 性樹脂中,以點狀塗佈於單側基板上而使其與對向基板貼 合之方法;以及使導電性粒子混合並分散於周邊密封劑 中’以線狀塗佈而兼作密封條及上下基板之電性連接之方 法等。此種使用形態中之任一者均可應用本發明之導電性 粒子。又,本發明之導電性粒子由於在基材粒子之表面設 置導電層,故而藉由基材粒子之優異之彈性,可於不損傷 透明基板等之情況下導電連接。 以下’列舉實施例及比較例而具體地說明本發明。本發 明並不僅限定於以下之實施例。 (實施例1) (1)樹脂粒子形成步驟 於含有3重量%之聚乙烯醇(日本合成化學工業公司製造 159121.doc -27- 201222558 之GH-20」)之水溶液800重量份中添加二乙烯基苯7〇重 量份、三羥甲基丙烷三甲基丙烯酸酯3〇重量份、及過氧化 苯甲醯2重量份,攪拌而使其混合。於氮氣環境下一邊攪 拌一邊加熱至80°C,進行15小時之反應而獲得樹脂粒子。 將所獲得之樹脂粒子以蒸餾水及曱醇清洗後,進行分離 操作而獲得平均粒徑4.1 μηι及變異係數5.〇%之樹脂粒子。 以下存在記作樹脂粒子Α之情況。 (2) 非電解鍍銅步驟 對所獲得之樹脂粒子A 10 g進行钮刻處理後進行水洗。 繼而,於樹脂粒子中添加硫酸鈀,使把離子吸附於樹脂粒 子上。 繼而於含有二甲胺硼烷〇.5重量%之水溶液中添加吸附有 纪離子之樹脂粒子而使鈀活化。於該樹脂粒子中添加蒸餾 水5 0 0 m L而4蔓得粒子懸浮液。 又’準備含有40 g/L之硫酸銅(5水合物)、1〇〇 g/L之乙二 胺四乙酸(EDTA ’ Ethylene Diamine Tetra-acetic Acid)、50 g/L之葡萄酸鈉、及25 g/L之甲醛且調整.為pH 10.5之非電解 鍵敷液。於上述粒子懸浮液中緩緩添加上述非電解鍍敷 液’並於50°C下一面攪拌一面進行非電解鍍銅《以此種方 式獲得於表面上設置有鋼層(厚度約40 nm)之鍍銅粒子》 (3) 非電解鍍錫步驟 製備含有氣化錫5 g及離子交換水1 〇〇〇 mL之溶液,混合 所獲得之鍍銅粒子15 g而獲得水性懸浮液。於此水性懸浮 液中加入硫脲30 g及酒石酸80 g而獲得電鍍液。將該電鍍 159121.doc -28 --24- 201222558 The amount is preferably in the range of 10 to 99.99% by weight. The above binder resin is contained. More preferably, the P 艮 is 3 〇 weighs 4%, the (9) preferred lower limit is 5 〇 wt%, the lower limit is preferably 7 〇 wt%, and the more preferred upper limit is 99 9% by weight. When the content of the above-mentioned binder resin satisfies the above lower limit and upper limit, the conductive particles can be effectively disposed between the electrodes, and the conduction reliability between the electrodes can be improved step by step. The content of the conductive particles is preferably in the range of 〇1 to 2% by weight based on 1% by weight of the anisotropic conductive material. A more preferable lower limit of 3 of the above conductive particles is 〇丨% by weight, and even more preferably, the upper limit is 1% by weight. When the content of the conductive particles satisfies the above lower limit and upper limit, the conduction reliability between the electrodes can be further improved. (Connection structure) The connection structure member can be connected by using the t conductive particles + or the anisotropic conductive material containing the conductive particles and the binder resin, whereby a connection structure can be obtained. Preferably, the connection structure includes a second connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is formed by the conductive particles (four) of the present invention. Or by the inclusion of the conductive particles and the adhesive resin (4) (four) material (four). In the case of using conductive particles, the connecting portion itself is a conductive particle. In other words, the first and second connection target members are connected by conductive particles. Fig. 3 is a front cross-sectional view schematically showing a connection structure using conductive particles according to an embodiment of the present invention. The connection structure 21 shown in FIG. 3 includes an i-th connection target member, a second 159121.doc • 25 201222558 connection target member 23, and a connection portion 24 that connects the second and second connection object members 22 and 23. It is formed by hardening an anisotropic conductive material containing conductive particles. Further, in Fig. 3, the conductive particles 丨 are shown in a schematic form for convenience of illustration. In addition to the conductive particles 1, conductive particles 11, 61, and 71 can also be used. The first connection member 22 has a plurality of electrodes 22b on the upper surface 22a. The second connection member 23 has a plurality of electrodes on the lower surface, and the electrodes 22b and 23b are electrically connected by one or a plurality of conductive particles j. Therefore, the first 'second connection target members 22 and 23 are electrically connected by the conductive particles 1. The method for producing the above-described connection structure is not particularly limited. The production example of the connection structure is a method in which the anisotropic conductive material is placed between the second connection target member and the second connection target member to obtain a laminate, and the laminate is heated and pressurized. The pressure of the above pressurization is about 9.8 x l 〇 4 to 4.9 x l 〇 6 pa. The heating temperature is about 120 to 22 (about TC. By using the conductive particles of the present invention, even if such a pressure is applied, it is difficult to cause a large crack in the copper-tin layer. Therefore, the conduction between the electrodes can be improved. Specific examples of the connection target member include electronic components such as a semiconductor wafer, a capacitor, and a diode, and a circuit board such as a printed circuit board, a flexible printed circuit board, and a glass substrate. Examples of the electrode include a metal electrode such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, and a tungsten electrode. The connection target member is a flexible printed substrate 159121.doc •26-201222558 When the electrode is a glass substrate, the electrode is preferably an aluminum electrode, a steel electrode, a molybdenum electrode or a tungsten electrode. In the above electrode, the electrode may be an electrode formed only by (4), or may be a layer of a layer on the surface of the i-metal oxide layer. Examples of the metal oxides include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, A1, and ruthenium. When other forms of use of the conductive particles of the present invention are listed, conductive particles may be used as a conductive material for electrically connecting the upper and lower substrates of the liquid crystal display element. The conductive particles may be mixed and dispersed. a thermosetting resin or a thermal uv (ultraviolet), which is applied to a single-sided substrate in a punctiform manner and bonded to a counter substrate; and the conductive particles are mixed and dispersed. In the peripheral sealant, the method is applied in a linear form to serve as a method for electrically connecting the sealing strip and the upper and lower substrates, etc. The conductive particles of the present invention can be applied to any of the above-described forms of use. Since the conductive particles are provided with a conductive layer on the surface of the substrate particles, the substrate particles can be electrically connected without being damaged by the excellent elasticity of the substrate particles. The present invention will be specifically described by way of examples and comparative examples. The present invention is not limited to the following examples. (Example 1) (1) Resin particle formation step in containing 3% by weight of polyvinyl alcohol (Japan Synthetic Chemical Industry) Adding 2 parts by weight of divinylbenzene, 3 parts by weight of trimethylolpropane trimethacrylate, and benzoyl peroxide to 800 parts by weight of an aqueous solution of GH21" 2012 manufactured by the company 159121.doc -27-201222558) 2 parts by weight of formazan, stirred and mixed, and heated to 80 ° C while stirring in a nitrogen atmosphere, and reacted for 15 hours to obtain resin particles. The obtained resin particles were washed with distilled water and decyl alcohol, and then subjected to washing. Separation operation was carried out to obtain resin particles having an average particle diameter of 4.1 μm and a coefficient of variation of 5.% by weight. Hereinafter, there is a case where it is referred to as a resin particle enthalpy. (2) Electroless copper plating step The obtained resin particles A 10 g were subjected to a button etching treatment and then washed with water. Then, palladium sulfate is added to the resin particles to adsorb the ions on the resin particles. Then, the resin particles which adsorb the cation ions are added to the aqueous solution containing 5% by weight of dimethylamine borane to activate the palladium. To the resin particles, distilled water of 5,000 m L and 4 vines of a particle suspension were added. 'Prepare to prepare 40 g/L copper sulfate (5 hydrate), 1 〇〇g/L ethylenediaminetetraacetic acid (EDTA 'Ethylene Diamine Tetra-acetic Acid), 50 g/L sodium gluconate, and 25 g / L of formaldehyde and adjusted. It is a non-electrolytic bond solution with a pH of 10.5. The electroless plating solution was gradually added to the above-mentioned particle suspension and subjected to electroless copper plating while stirring at 50 ° C. In this manner, a steel layer (thickness of about 40 nm) was provided on the surface. Copper-plated particles (3) Electroless tin plating step A solution containing 5 g of vaporized tin and 1 mL of ion-exchanged water was prepared, and 15 g of the obtained copper-plated particles were mixed to obtain an aqueous suspension. A plating solution was obtained by adding 30 g of thiourea and 80 g of tartaric acid to the aqueous suspension. The plating 159121.doc -28 -
201222558 液設為浴溫60°C並反應20分鐘。進而,於該電鍍液中進而 加入氣化錫20 g '檸檬酸40 g及氫氧化鈉30 g,並於浴溫 6(TC下反應20分鐘,藉此獲得於銅層之表面上設置有錫層 (厚度約72 nm)之粒子。 (4)合金化步驟 將所獲得之於銅層之表面上設置有錫層的粒子於220°C 下加熱20小時。加熱後,銅與錫層合金化。以此種方式獲 得於樹脂粒子之表面上設置有銅-錫層(厚度約1〇〇 nm)且該 銅-錫層含有銅與錫之合金的導電性粒子。於所獲得之導 電性粒子中’對銅-錫層整體中所含之鋼與錫之含量進行 δ平價,結果為銅之含量為40重量%,錫之含量為6〇重量 %。 (實施例2) 於非電解鍍銅步驟中將銅層之厚度設為約5〇 nm,且於 非電解鍍錫步驟中將錫層之厚度變更為約6〇 nm,除此以 外以與實施例1相同之方式獲得於樹脂粒子之表面上設置 有銅-錫層(厚度約1〇〇 nm)且該銅-錫層含有銅與錫之合金 的導電性粒子。對於所獲得之導電性粒子評價銅_錫層整 體中所含之銅與錫之含量,結果鋼之含量為5〇重量。/。、錫 之含量為50重量〇/〇。 (實施例3) ------------_〜/于及砹马約00 nm,且於 非電解鍍錫步驟中將錫層之厚度變更為約48 nm,除此以 外以與實施例1相同之方式獲得於樹脂粒子之表面上設置 159121.doc -29- 201222558 有銅-錫層(厚度約loo nm)且該銅-錫層含有鋼與錫之人金 的導電性粒子。對於所獲得之導電性粒子,評價鋼層 整體中所含之銅與錫之含量,結果鋼之含量為60重量%、 錫之含量為40重量%。 (實施例4) (1)芯物質附著步驟 對實施例1中所獲得之樹脂粒子A 10 g進行蝕刻處理後The 201222558 solution was set to a bath temperature of 60 ° C and reacted for 20 minutes. Further, in the plating solution, 20 g of vaporized tin 20 g of citric acid and 30 g of sodium hydroxide were further added, and the mixture was reacted at a bath temperature of 6 (TC for 20 minutes, thereby obtaining tin on the surface of the copper layer. Particles of a layer (having a thickness of about 72 nm) (4) Alloying step The particles provided with the tin layer on the surface of the copper layer were heated at 220 ° C for 20 hours. After heating, the copper and the tin layer were alloyed. In this manner, a conductive particle in which a copper-tin layer (having a thickness of about 1 Å) is provided on the surface of the resin particle and the copper-tin layer contains an alloy of copper and tin is obtained. In the middle, the content of steel and tin contained in the copper-tin layer as a whole was subjected to δ parity, and as a result, the content of copper was 40% by weight, and the content of tin was 6% by weight. (Example 2) Electroless copper plating In the step, the thickness of the copper layer was set to about 5 Å, and the thickness of the tin layer was changed to about 6 Å in the electroless tin plating step, and the resin particles were obtained in the same manner as in Example 1. a copper-tin layer (having a thickness of about 1 〇〇 nm) on the surface and the copper-tin layer containing an electroconductive grain of an alloy of copper and tin The content of copper and tin contained in the entire copper-tin layer was evaluated for the obtained conductive particles, and as a result, the content of steel was 5 Å by weight, and the content of tin was 50% by weight/〇. 3) ------------ _ ~ / 砹 约 00 nm, and in the electroless tin plating step to change the thickness of the tin layer to about 48 nm, in addition to implementation In the same manner as in Example 1, 159121.doc -29-201222558 having a copper-tin layer (thickness about loo nm) and the copper-tin layer containing conductive particles of steel and tin human gold was obtained in the same manner as in Example 1. The conductive particles obtained were evaluated for the content of copper and tin contained in the entire steel layer, and as a result, the content of steel was 60% by weight and the content of tin was 40% by weight. (Example 4) (1) Core substance adhesion step After etching the resin particles A 10 g obtained in Example 1,
進行水洗。繼而’於樹脂粒子中添加硫酸把,使纪離子吸 附於樹脂粒子上D 於離子交換水300 mL中將附著有鈀之樹脂粒子攪拌3分 鐘使其分散而獲得分散液。繼而,歷時3分鐘將金屬鎳粒 子聚料(三井金屬公司製造「2020SUS」,平均粒役2〇〇 nm)l g添加於上述分散液中而獲得附著有芯物質之樹脂粒 子。 / (2)導電性粒子之製作 除使用附著有芯物質之樹脂粒子以外以與實施例丨相同 之方式進行非電解鍍銅步驟、非電解鍍錫步驟及合金化步 驟,而獲得於樹脂粒子之表面上設置有銅_錫層且該鋼-錫 層含有銅與錫之合金的導電性粒子。所獲得之導電性粒子 於銅-錫層之表面具有突起。對於所獲得之導電性粒子評 價鋼-錫層整體中所含之銅與錫之含量,結果銅之含量為 40重量%、錫之含量為60重量%。再者,求銅與錫之含量 時’作為芯物質而含有之鎳除外。 (貫施例5 ) 159121.doc 201222558 將樹脂粒子A變更為1,4- 丁二醇二丙烯酸酯與四經甲基 甲院四丙稀酸S旨之共聚樹脂粒子(1,4 -丁二醇二丙稀酸酉旨: 四羥曱基甲烷四丙烯酸酯=95重量% : 5重量%,以下存在 記為樹脂粒子B之情況),除此以外以與實施例4相同之方 式獲得導電性粒子。所獲得之導電性粒子於銅-錫層之表 面上具有突起。 (實施例6) (1)絕緣性樹脂粒子之製作 於安裝有4 口可分離式遮罩、攪拌翼、三向旋塞、冷卻 管及溫度探針之1000 mL之可分離式燒瓶中,將含有曱基 丙烯酸曱酯100 mmol、N,N,N-三甲基-N-2-曱基丙稀醯氧 基乙基氯化銨1 mmol、及2,2’-偶氮雙(2-肺基丙烷)二鹽酸 鹽1 mmol之單體組合物以固形物分率成為5重量%之方式 添加於離子交換水中後,以2〇〇 rpm進行攪拌,並於氮氣 環境下於70°C下進行24小時之聚合。反應結束後,進行冷 康乾燥而獲得於表面上具有銨基、平均粒徑22〇 nm及cV 值10%之絕緣性樹脂粒子。 使絕緣性樹脂粒子於超音波照射下分散於離子交換水中 而獲得絕緣性樹脂粒子之1 〇重量%之水分散液。 使實施例5中所獲得之導電性粒子1〇 g分散於離子交換 水500爪匕中,並添加絕緣性樹脂粒子之水分散液4 g,於 至溫下攪拌6小時。以3 μιη之篩網過濾器過濾後,進而以 甲醇進行清洗並乾燥而獲得附著有絕緣性樹脂粒子之導電 性粒子。 159121.doc -31 · 201222558 藉由掃描電子顯微鏡(SEM)進行觀察,結果於導電性粒 子之表面上僅形成1層絕緣性樹脂粒子之被覆層。藉由圖 像解析而算出相對於距導電性粒子之中心2.5 μιη之面積的 絕緣性樹脂粒子之被覆面積(即絕緣性樹脂粒子之粒控之 投影面積),結果被覆率為30%。 (實施例7) 除將樹脂粒子Α變更為樹脂粒子Β以外以與實施例1相同 之方式獲得導電性粒子。 (實施例8) 除將實施例5中所獲得之導電性粒子變更為實施例丨中所 獲得之導電性粒子以外以與實施例6相同之方式獲得附著 有絕緣性樹脂粒子之導電性粒子。 (實施例9) 除將實施例5中所獲得之導電性粒子變更為實施例4中所 獲付之導電性粒子以外以與實施例6相同之方式獲得附著 有絕緣性樹脂粒子之導電性粒子。 、 (實施例10) 除將實施例5中所獲得之導電性粒子 k 文尺馮貫施例7中所 獲得之導電性粒子以外以與實施例6相 仍U之方式獲得附荖 有絕緣性樹脂粒子之導電性粒子。 4有 (實施例11) 使用該導電性粒 準備實施例1中所獲得之導電性粒子 子實施以下之(1)及(2)之步驟。 (1)非電解鍍鈀步驟 159121.doc -32· 201222558 利用超音波處理機使所獲得之鍍銅粒子丨0 g分散於離子 交換水500 mL中而獲得粒子懸浮液。 又,準備含有4 g/L之硫酸鈀(酸酐)、2.4 g/L之乙二胺、 4.0 g/L之硫酸肼及35 g/L之次亞磷酸鈉且調整為pH 1〇之 非電解鍍敷液《對上述粒子懸浮液於5〇<t下一面攪拌一面 緩緩添加上述非電解鍍敫液,進行非電解鍍鈀。非電解鍍 敷液之添加量係以鈀層之厚度成為1〇 nm之方式進行調 整。以蒸餾水及甲醇將所獲得之經鑛把之樹脂粒子清洗 後,進行真空乾燥。以此種方式獲得於樹脂粒子之表面上 設置有銅層且於銅層之表面上設置有鈀層之導電性粒子。 (2)乳清洗去除步驟 使所獲得之導電性粒子1 g分散於蒸餾水1000 mL(比電 阻為18 ΜΩ)中,裝入帶有攪拌機之高壓釜中並於〇i Mpa 之加壓下、於121°C下攪拌清洗10小時。其後,進行過濾 並乾燥。 以此種方式獲得,於樹脂粒子之表面上設置有銅-錫層 (厚度約100 nm),且該銅-錫層含有銅與錫之合金,進而於 銅-錫層之表面上設置有鈀層(厚度為1〇 nm)的導電性粒 子。 (實施例12) 準備實施例1令所獲得之樹脂粒子Αβ又,準備銅粉(粒 徑為3_0〜7.0 μηι)及錫粉(粒徑為3 〇〜7 〇 μιη)。 利用樹脂粒子A、銅粉及錫粉,使用混合器(奈良機械製 作所公司製造)並藉由物理性/機械性混成法,而獲得於樹 159121.doc -33- 201222558 脂粒子之表面上具有銅-錫層(厚度10〇11111)之粒子。 繼而,將所獲得之於樹脂粒子之表面上具有鋼_錫層之 粒子於220 C下加熱20小時。加熱後,鋼與錫層合金化。 以此種方式獲得於樹脂粒子之表面上設置有銅_錫層(厚度 100 nm)且該銅-錫層含有銅與錫之合金的導電性粒子。= 於所獲得之導電性粒子,評價銅_錫層整體中所含之銅與 錫之含量,結果銅之含量為40重量%、錫之含量為6〇重量 %。上述銅-錫層中之最大厚度為最小厚度之2倍以上。 (實施例13) 準備實施例1中所使用之樹脂粒子A。又,準備銅錫合金 粉(銅之含量為40重量%、錫之含量為6〇重量%、粒徑為 3·0~7·0 μηι)。 利用樹脂粒子Α及銅錫合金粉,使用混合器(奈良機械製 作所公司製造)並藉由物理性/機械性混成法,而獲得於樹 月曰粒子之表面上具有銅-錫層(厚度1〇〇 nm)之粒子。 對於所獲得之導電性粒子,評價銅-錫層整體中所含之 銅與錫之含量’結果銅之含量為4〇重量%、錫之含量為6〇 重量。/。。上述銅-錫層中之最大厚度為最小厚度之2倍以 上。 (比較例1) 準備實施例1中所獲得之樹脂粒子A。對該樹脂粒子A J 〇 g進行蝕刻處理後進行水洗。繼而,於樹脂粒子中添加硫 酸纪’使鈀離子吸附於樹脂粒子。 繼而於含有0.5重量%之二曱胺硼烷之水溶液中添加吸附 159l2l.doc •34· 201222558 有把離子之樹脂粒子而使纪活化。於該樹脂粒子中添加蒸 餾水500 mL而獲得粒子懸浮液。 又,準備含有40 g/L之硫酸銅(5水合物)、1〇〇 g/L之乙二 胺四乙酸(EDTA) ' 50 g/L之葡萄酸納及25 g/L之甲駿且調 . 整為PH 10.5的非電解鍍敷液。於上述粒子懸浮液中緩緩 ' 添加上述非電解鍍敷液,並於50°C下一面攪拌一面進行非 電解鍍銅。以此種方式獲得於表面上設置有銅層(厚度1〇〇 nm)之錄銅粒子(導電性粒子)。於比較例1中,於銅層之表 面上未設置錫層。 (比較例2) 將實施例1之非電解鍍錫步驟後所獲得之於銅層(厚度約 40 nm)之表面上没置有錫層(厚度約72 nm)之粒子設為導電 性粒子。於比較例2中未進行合金化步驟。 (比較例3) 於非電解鍍銅步驟中將銅層之厚度設為約8〇 nm,且於 非電解鍍錫步驟中將錫層之厚度變更為約2〇㈣,除此以 外以與實施例1相同之方式獲得於樹脂粒子之表面上設置 有銅錫層(厚度100 nm)且該銅_錫層含有銅與錫之合金的 導電性粒子。對於所獲得之導電性粒子,評價銅·錫層整 體t所含之銅與錫之含晋, ”勒< 3里結果銅之含量為8〇重量%、錫 之含量為20重量%。 (比較例4) 14 nm,且於 nm,除此以 於非電解鍍銅步驟甲將銅層之厚度設為約 非電解鍍錫步驟中將錫層之厚度變更為約% 159121.doc •35· 201222558 外以與實施例1相同之方式獲得於樹脂粒子之表面上設置 有銅-錫層(厚度約100 nm)且該銅-錫層含有銅與錫之合金 的導電性粒子。對於所獲得之導電性粒子,評價銅-錫層 整體中所含之銅與錫之含量,結果銅之含量為15重量%、 錫之含量為85重量%。 (實施例14) 於非電解鍍銅步驟中將銅層之厚度設為約3〇 nm,且於 非電解鍍錫步驟中將錫層之厚度變更為約84 nm,除此以 外以與實施例1相同之方式獲得於樹脂粒子之表面上設置 有銅錫層(厚度約1〇〇 nm)且該銅_錫層含有銅與錫之合金 的導電性粒子。對於所獲得之導電性粒子,評價銅-錫層 整體中所含之銅與錫之含量,結果銅之含量為3〇重量%、 錫之含量為70重量%。 (評價) (1)導電層之裂痕 準備形成有L/S為1〇〇 μιη/ιοο μηι之銅電極之2片基板。 又,準備含有導電性粒子10重量份、作為黏合樹脂之環氧 樹脂(三井化學公司製造之rsturct B〇nd χΝ_5Α」)85重量 份、及咪唑型硬化劑5重量份之異向性導電膏。 以導電性粒子接觸銅電極之方式於基板之上表面塗佈異 向丨生導電膏後,以銅電極接觸導電性粒子之方式積層其他 基板,施加3 MPa之壓力而進行壓接,而獲得積層體。其 後,將積層體於180。(:下加熱i分鐘,藉此使異向性導電膏 硬化而獲得連接構造體。 I59121.doc -36- 3 201222558 對於所獲得之連接構造體,評價於導電性粒子之導電層 中是否存在裂痕。以下述基準判定導電層之裂痕。 [導電層之裂痕之判定基準] 〇:於導電層中無較大之裂痕,樹脂粒子未露出 △:於導電層中存在較大之裂痕,樹脂粒子少許露出 X.於導電層中存在較大之裂痕,樹脂粒子較大地露出 (2) 導通可靠性 · 藉由四端子法對上述(i)之評價中所獲得之1〇〇個連接構 造體的相對向之電極間之連接電阻進行測定,評價電極間 是否導通’以下述基準判定導通可靠性。 [導通可靠性之判定基準] 〇:100個連接構造體全部導通 △ : 100個連接構造體内未導通之數量為1個或2個 x : 100個連接構造體内未導通之數量為3個以上 (3) 維氏硬度 使用維氏硬度計(島津製作所公司製造之「DUH-W201」)測定所獲得之導電性粒子中之銅-錫層之維氏硬 度。以下述基準判定維氏硬度。 [維氏硬度之判定基準] A :維氏硬度超過500 B:維氏硬度為1〇〇以上、500以下 C :維氏硬度未達1〇〇 (4) 熔點 於鋁鍋中裝入導電性粒子0.2〜0.5 mg,使用TA Instruments 159121.doc -37- 201222558 製造之「DSC2920」於升溫速度為lOt/min之條件下進行 掃描而獲得Heat-Flow曲線(Heat-Flow Curve,熱流曲線)。 將該曲線上可見熔解之波峰之頂點所示之溫度值設為熔 (5)金屬含量之分析 於玻璃製三角燒瓶中,將導電性粒子〇 5 g及王水(35〇/〇Washed with water. Then, sulfuric acid was added to the resin particles, and the particles were adsorbed on the resin particles. D The resin particles having palladium adhered thereto were dispersed in 300 mL of ion-exchanged water for 3 minutes to be dispersed to obtain a dispersion. Then, metal nickel particles ("2020SUS" manufactured by Mitsui Metals Co., Ltd., average granules 2 〇〇 nm) 1 g were added to the above dispersion liquid for 3 minutes to obtain resin particles to which the core material was attached. / (2) Preparation of Conductive Particles The electroless copper plating step, the electroless tin plating step, and the alloying step were carried out in the same manner as in Example except that the resin particles having the core material adhered thereto were used to obtain the resin particles. A copper-tin layer is provided on the surface, and the steel-tin layer contains conductive particles of an alloy of copper and tin. The obtained conductive particles have protrusions on the surface of the copper-tin layer. The content of copper and tin contained in the entire steel-tin layer was evaluated for the obtained conductive particles, and as a result, the content of copper was 40% by weight and the content of tin was 60% by weight. Further, when the content of copper and tin is sought, "the nickel contained as a core material is excluded. (Example 5) 159121.doc 201222558 The resin particle A was changed to a copolymer resin particle of 1,4-butanediol diacrylate and tetramethyl methacrylate tetraacetic acid S (1,4-di Conductivity was obtained in the same manner as in Example 4 except that the alcohol dipropylene acid was used: tetrahydroxymethane methane tetraacrylate = 95% by weight: 5% by weight, which is referred to as the case of the resin particles B. particle. The obtained conductive particles have protrusions on the surface of the copper-tin layer. (Example 6) (1) The insulating resin particles were prepared in a separable flask of 1000 mL equipped with four separable masks, stirring blades, three-way cocks, cooling tubes and temperature probes. Ethyl decyl acrylate 100 mmol, N, N, N-trimethyl-N-2-mercaptopropyl methoxyethyl ammonium chloride 1 mmol, and 2,2'-azobis (2-lung 1 mmol of the monomer composition of the propane) dihydrochloride was added to the ion exchange water so that the solid content was 5 wt%, and then stirred at 2 rpm and at 70 ° C under a nitrogen atmosphere. The polymerization was carried out for 24 hours. After completion of the reaction, the mixture was cooled to obtain an insulating resin particle having an ammonium group, an average particle diameter of 22 〇 nm, and a cV value of 10% on the surface. The insulating resin particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain an aqueous dispersion of 1% by weight of the insulating resin particles. The conductive particles 1 〇 g obtained in Example 5 were dispersed in xenotypes of ion-exchanged water 500, and 4 g of an aqueous dispersion of insulating resin particles was added, and the mixture was stirred at a temperature for 6 hours. After filtering with a 3 μηη mesh filter, the mixture was washed with methanol and dried to obtain conductive particles to which insulating resin particles were adhered. 159121.doc -31 - 201222558 Observation by a scanning electron microscope (SEM) revealed that only one coating layer of insulating resin particles was formed on the surface of the conductive particles. The coverage area of the insulating resin particles (i.e., the projected area of the grain size of the insulating resin particles) with respect to the area of 2.5 μm from the center of the conductive particles was calculated by image analysis, and the coverage was 30%. (Example 7) Conductive particles were obtained in the same manner as in Example 1 except that the resin particles were changed to resin particles. (Example 8) Conductive particles having insulating resin particles adhered thereto were obtained in the same manner as in Example 6 except that the conductive particles obtained in Example 5 were changed to the conductive particles obtained in Example 。. (Example 9) Conductive particles to which insulating resin particles were attached were obtained in the same manner as in Example 6 except that the conductive particles obtained in Example 5 were changed to the conductive particles obtained in Example 4. . (Example 10) In addition to the conductive particles obtained in Example 7 obtained in Example 5, the conductive particles obtained in Example 7 were obtained in the same manner as in Example 6 Conductive particles of resin particles. (Example 11) Using the conductive particles The conductive particles obtained in Example 1 were prepared to carry out the following steps (1) and (2). (1) Electroless palladium plating step 159121.doc -32· 201222558 The obtained copper plating particles 丨0 g were dispersed in 500 mL of ion-exchanged water using an ultrasonic processor to obtain a particle suspension. Further, a non-electrolytic solution containing 4 g/L of palladium sulfate (anhydride), 2.4 g/L of ethylenediamine, 4.0 g/L of barium sulfate, and 35 g/L of sodium hypophosphite and adjusted to pH 1 was prepared. Plating solution "The above-mentioned non-electrolytic rhodium plating solution was gradually added while stirring the above-mentioned particle suspension at 5 Torr < t, and electroless palladium plating was performed. The amount of the electroless plating solution added was adjusted so that the thickness of the palladium layer became 1 〇 nm. The obtained resin particles of the ore were washed with distilled water and methanol, and then vacuum dried. In this manner, conductive particles having a copper layer on the surface of the resin particles and a palladium layer on the surface of the copper layer were obtained. (2) The milk washing removal step is performed by dispersing 1 g of the obtained conductive particles in 1000 mL of distilled water (specific resistance of 18 Μ Ω), charging into an autoclave with a stirrer and under pressure of 〇i Mpa, The mixture was washed with stirring at 121 ° C for 10 hours. Thereafter, it was filtered and dried. In this manner, a copper-tin layer (having a thickness of about 100 nm) is provided on the surface of the resin particle, and the copper-tin layer contains an alloy of copper and tin, and palladium is further provided on the surface of the copper-tin layer. Conductive particles of a layer (having a thickness of 1 〇 nm). (Example 12) The resin particles Αβ obtained in Example 1 were prepared, and copper powder (particle diameter: 3_0 to 7.0 μηι) and tin powder (particle diameter: 3 〇 to 7 〇 μιη) were prepared. Using resin particles A, copper powder, and tin powder, using a mixer (manufactured by Nara Machinery Co., Ltd.) and obtaining a copper on the surface of the resin particles by physical/mechanical mixing method, 159121.doc -33 - 201222558 - Particles of the tin layer (thickness 10〇11111). Then, the particles having the steel-tin layer obtained on the surface of the resin particles were heated at 220 C for 20 hours. After heating, the steel is alloyed with the tin layer. In this manner, conductive particles in which a copper-tin layer (thickness: 100 nm) was provided on the surface of the resin particles and the copper-tin layer contained an alloy of copper and tin were obtained. = The content of copper and tin contained in the entire copper-tin layer was evaluated for the obtained conductive particles, and as a result, the content of copper was 40% by weight and the content of tin was 6% by weight. The maximum thickness of the above copper-tin layer is more than twice the minimum thickness. (Example 13) The resin particles A used in Example 1 were prepared. Further, a copper-tin alloy powder (copper content of 40% by weight, tin content of 6% by weight, and particle diameter of 3,000 to 7.5 μm) was prepared. Using a resin particle crucible and a copper-tin alloy powder, a copper-tin layer (thickness 1 Å) was obtained on the surface of the sapphire particles by a mixer (manufactured by Nara Machinery Co., Ltd.) and by physical/mechanical mixing. 〇nm) particles. With respect to the obtained conductive particles, the content of copper and tin contained in the entire copper-tin layer was evaluated. As a result, the content of copper was 4% by weight and the content of tin was 6 Å by weight. /. . The maximum thickness of the above copper-tin layer is more than twice the minimum thickness. (Comparative Example 1) The resin particles A obtained in Example 1 were prepared. The resin particles A J 〇 g were subjected to an etching treatment and then washed with water. Then, sulfuric acid is added to the resin particles to adsorb palladium ions to the resin particles. Then, an adsorption solution of 159 l 2 l.doc • 34 · 201222558 was added to an aqueous solution containing 0.5% by weight of diammonium borane to activate the resin particles. 500 mL of distilled water was added to the resin particles to obtain a particle suspension. Further, prepare 40 g/L of copper sulfate (5 hydrate), 1 〇〇g/L of ethylenediaminetetraacetic acid (EDTA) '50 g/L of gluconic acid and 25 g/L of jun Adjusted. An electroless plating solution with a pH of 10.5. The above electroless plating solution was gradually added to the above-mentioned particle suspension, and electroless copper plating was carried out while stirring at 50 °C. In this way, copper particles (conductive particles) provided with a copper layer (thickness 1 〇〇 nm) on the surface were obtained. In Comparative Example 1, no tin layer was provided on the surface of the copper layer. (Comparative Example 2) The particles having no tin layer (thickness: about 72 nm) on the surface of the copper layer (thickness: about 40 nm) obtained after the electroless tin plating step of Example 1 were used as the conductive particles. The alloying step was not carried out in Comparative Example 2. (Comparative Example 3) The thickness of the copper layer was set to be about 8 Å in the electroless copper plating step, and the thickness of the tin layer was changed to about 2 Å (four) in the electroless tin plating step, and other methods were carried out. In the same manner as in Example 1, a conductive layer in which a copper tin layer (thickness: 100 nm) was provided on the surface of the resin particle and the copper-tin layer contained an alloy of copper and tin was obtained. With respect to the obtained conductive particles, the content of copper and tin contained in the entire copper/tin layer t was evaluated, and the content of copper was 8 Å by weight and the content of tin was 20% by weight. Comparative Example 4) 14 nm, and in nm, in addition to the electroless copper plating step A, the thickness of the copper layer is set to about the thickness of the tin layer in the electroless tin plating step to about % 159121.doc • 35· In the same manner as in Example 1, a conductive particle in which a copper-tin layer (thickness: about 100 nm) was provided on the surface of the resin particle and the copper-tin layer contained an alloy of copper and tin was obtained in the same manner as in Example 1. The conductive particles were evaluated for the content of copper and tin contained in the entire copper-tin layer, and as a result, the content of copper was 15% by weight and the content of tin was 85% by weight. (Example 14) In the electroless copper plating step The thickness of the copper layer was set to about 3 〇 nm, and the thickness of the tin layer was changed to about 84 nm in the electroless tin plating step, except that the surface of the resin particle was provided in the same manner as in Example 1. a copper tin layer (having a thickness of about 1 〇〇 nm) and the copper-tin layer contains a guide of an alloy of copper and tin For the obtained conductive particles, the content of copper and tin contained in the entire copper-tin layer was evaluated, and as a result, the content of copper was 3% by weight and the content of tin was 70% by weight. (Evaluation) (1) ) The crack of the conductive layer is prepared by forming a copper substrate having a copper electrode having an L/S of 1 μm η/ιοο μηι. Further, an epoxy resin containing 10 parts by weight of conductive particles as a binder resin (manufactured by Mitsui Chemicals Co., Ltd.) is prepared. Rsturct B〇nd χΝ_5Α") 85 parts by weight, and an imidazole type hardener 5 parts by weight of an anisotropic conductive paste. After the conductive particles are contacted with the copper electrode, the counter-conductive conductive paste is applied to the upper surface of the substrate, and then the other electrode is laminated with the copper electrode in contact with the conductive particles, and a pressure of 3 MPa is applied thereto to perform pressure bonding to obtain a laminate. body. Thereafter, the laminate is at 180. (: heating is performed for 1 minute, whereby the anisotropic conductive paste is hardened to obtain a bonded structure. I59121.doc -36- 3 201222558 For the obtained joined structure, whether or not cracks are present in the conductive layer of the conductive particles The crack of the conductive layer is determined by the following criteria. [Criteria for the determination of cracks in the conductive layer] 〇: There is no large crack in the conductive layer, and the resin particles are not exposed. △: There is a large crack in the conductive layer, and the resin particles are slightly Exposed to X. There is a large crack in the conductive layer, and the resin particles are exposed to a large extent. (2) Conduction reliability. The relative structure of one of the connected structures obtained by the above-mentioned (i) evaluation by the four-terminal method. The connection resistance between the electrodes was measured, and the conduction between the electrodes was evaluated. The conduction reliability was determined based on the following criteria. [The criterion for determining the conduction reliability] 〇: 100 connection structures were all turned on △ : 100 connected structures were not The number of conduction is 1 or 2 x: The number of non-conducting bodies in 100 connection structures is 3 or more. (3) Vickers hardness is used. "DUH-W201" manufactured by Shimadzu Corporation The Vickers hardness of the copper-tin layer in the obtained conductive particles was measured. The Vickers hardness was determined by the following criteria. [Standard of Vickers hardness] A: Vickers hardness exceeding 500 B: Vickers hardness was 1〇〇 Above, below 500, C: Vickers hardness is less than 1 〇〇 (4) Melting point: 0.2 to 0.5 mg of conductive particles are placed in an aluminum pan, and "DSC2920" manufactured by TA Instruments 159121.doc -37-201222558 is used for heating rate. The Heat-Flow Curve was obtained by scanning under the condition of lOt/min. The temperature value indicated by the peak of the melting peak visible on the curve was analyzed as the melting (5) metal content. In a glass-made conical flask, conductive particles 〇 5 g and aqua regia (35 〇 / 〇
之鹽酸溶液15 mL、70°/。之硝酸5 mL)20 mL混合,於70°C 之溫水浴中加溫且放置丨5分鐘。將燒瓶自水浴中取出後, 以燒瓶中之液溫成為40°c以下之方式使其自然冷卻。冷卻 後,使用玻璃漏斗及濾紙(Advantec製造之濾紙,N〇. 5C) 過濾含有金屬離子及樹脂粒子之酸性溶液。進行固液分 離,取出含有金屬離子之酸性溶液1〇〇 ,其後以微量明 液管分取1 mL,並以純水稀釋1〇〇倍,而獲得稀釋液。禮 用所獲得之稀釋液以ICP(電感耦合電漿,堀場製作所製这 之ULTIMA2」)進行測量,根據所獲得之金屬離子濃肩 計算導電層之金屬之重量及各金屬之分量。 將結果不於下述矣彳φ 於「 1衣1τ於下述表1中,「_」表示未作言i| 價0 159121.docThe hydrochloric acid solution is 15 mL, 70 ° /. Mix 5 mL of nitric acid in 20 mL, warm in a warm water bath at 70 ° C and place for 5 minutes. After the flask was taken out from the water bath, it was naturally cooled so that the liquid temperature in the flask became 40 ° C or less. After cooling, an acidic solution containing metal ions and resin particles was filtered using a glass funnel and filter paper (filter paper manufactured by Advantec, N. 5C). The solid-liquid separation was carried out, and an acidic solution containing metal ions was taken out for 1 〇〇, and then 1 mL was dispensed in a minute amount of a liquid tube, and diluted 1 time with pure water to obtain a diluted solution. The dilution obtained by the ritual is measured by ICP (Inductively Coupled Plasma, ULTIMA2 manufactured by Horiba, Ltd.), and the weight of the metal of the conductive layer and the amount of each metal are calculated based on the obtained metal ion thick shoulder. The result is not less than the following 矣彳 φ in "1 garment 1τ in Table 1 below, "_" means unspoken i| price 0 159121.doc
•38· 201222558 【1<】 實施例11 < 非電解鍍敷 〇 § 0 0 < 〇 ν〇 實施例10 杯 非電解鍍敷 〇 S 〇 0 < ο m so 實施例9 < 非電解鍍敷 〇 S 0 〇 < S Ό 1實施例8 < 非電解鍍敷 〇 〇 〇 < 〇 實施例7 CQ m 非電解鍍敷 〇 § 0 0 < o fO so i實施例14 < ·€ 碡 非電解鍍敷 〇 < <1 CQ »〇 ON 實施例6 CQ 非電解鍍敷 _1 〇 〇 〇 < o SO 比較例4 < 1非電解鍍敷 S3 X X U S •ο 實施例5 碟 非電解鍍敷 〇 S 0 〇 < o ro so 比較例3 < 碡 ^非電解鍍敷 g X X CQ »〇 實施例4 < m 非電解鍍敷 〇 S 0 〇 < o 比較例2 < 非電解鍍敷 〇 S X X 1 1 實施例3 < 雄 非電解鍍敷 S 〇 0 〇 < 卜 比較例1 < 非電解鍍敷 僅銅層 〇 S X X 1 1 實施例2 < 非電解鍍敷 〇 〇 < O 卜 實施例13 < 碟 物理/機械方法 〇 S 0 0 < ο cn VO 實施例1 < 非電解鍍敷 〇 S 〇 〇 < ο Γ〇 Ό 實施例12 < 物理/機械方法 〇 S 〇 0 < 630 樹脂粒子之種類 有無突起 有無絕緣性粒子 有無第2導電層 第1導電層之形成法 有無合金化 銅之含量(重量%) 錫之含量(重量%) 導電層之裂痕 導通可靠性 維氏硬度 熔點 樹脂粒子之種類 有無突起 有無絕緣性粒子 有無第2導電層 第1導電層之形成法 有無合金化 銅之含量(重量 錫之含量(重量%) 導電層之裂痕 導通可靠性 維氏硬度 熔點 -39- 159121.doc 201222558 【圖式簡單說明】 圖1係表示本發明之第!實施形態之導電性粒子 的剖面 圖。 圖2係表示本發明之第2實施形態之導電性粒子 』面 圖。 圖3係模式性地表示使用本發明之第1實施形態之導電性 粒子之連接構造體的正面剖面圖。 圖4係用以說明獲得圖1所示之導電性粒子之方法的剖面 圖。 圖5係表示本發明之第3實施形態之導電性粒子的剖面 圖。 圖6係表示本發明之第4實施形態之導電性粒子的剖面 圖0 【主要元件符號說明】 1 導電性粒子 2 基材粒子 2a 表面 3 銅-锡層 3a 表面 11 導電性粒子 11a 表面 12 銅-錫層 12a 表面 13 芯物質 •40· 159l21.doc• 38· 201222558 [1<] Example 11 <Electroless plating 〇§ 0 0 < 〇ν〇Example 10 Cup electroless plating 〇S 〇0 < ο m so Example 9 < Plating 〇S 0 〇<S Ό 1 Example 8 <Electroless plating 〇〇〇< 〇Example 7 CQ m Electroless plating 〇§ 0 0 < o fO so i Example 14 < · 碡 electroless plating 〇 <<1 CQ » 〇 ON Example 6 CQ electroless plating _1 〇〇〇 < o SO Comparative Example 4 < 1 Electroless plating S3 XXUS • ο Example 5 disc electroless plating 〇S 0 〇< o ro so Comparative Example 3 < 碡^ Electroless plating g XX CQ »〇Example 4 < m Electroless plating 〇S 0 〇< o Comparative example 2 < Electroless plating 〇SXX 1 1 Example 3 <Male electroless plating S 〇0 〇< Comparative Example 1 < Electroless plating only copper layer 〇SXX 1 1 Example 2 < Electrolytic plating 〇〇 < O 卜 Example 13 < Physical/mechanical method 〇S 0 0 < ο cn VO Example 1 <Electroless plating 〇S 〇〇< ο 实施 Example 12 <Physical/mechanical method 〇S 〇0 < 630 Resin particles Types of protrusions, presence or absence of insulating particles, presence or absence of second conductive layer, formation of first conductive layer, presence or absence of alloying copper content (% by weight), tin content (% by weight), conductive layer cracking reliability, Vickers hardness, melting point resin particles Types of protrusions, presence or absence of insulating particles, presence or absence of second conductive layer, formation of first conductive layer, presence or absence of alloying copper content (weight tin content (% by weight), conductive layer cracking reliability, Vickers hardness melting point -39- 159121 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention. Fig. 2 is a plan view showing a conductive particle according to a second embodiment of the present invention. Fig. 3 is a front cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention. Fig. 4 is a cross-sectional view for explaining a method of obtaining the electroconductive particles shown in Fig. 1. Fig. 5 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention. Fig. 6 is a cross-sectional view showing a conductive particle according to a fourth embodiment of the present invention. [Description of main components] 1. Conductive particles 2 Substrate particles 2a Surface 3 Copper-tin layer 3a Surface 11 Conductive particles 11a Surface 12 Copper - Tin layer 12a surface 13 core material • 40 · 159l21.doc
201222558 14 突起 15 絕緣性粒子 21 連接構造體 22 第1連接對象構件 22a 上表面 22b 電極 23 第2連接對象構件 23a 下表面 23b 電極 24 連接部 51 導電性粒子 52 銅層 52a 表面 53 錫層 61 導電性粒子 62 第2導電層 71 導電性粒子 72 銅-錫層 159121.doc -41 -201222558 14 Projection 15 Insulating particle 21 Connection structure 22 First connection target member 22a Upper surface 22b Electrode 23 Second connection target member 23a Lower surface 23b Electrode 24 Connection portion 51 Conductive particles 52 Copper layer 52a Surface 53 Tin layer 61 Conductive Particles 62 Second Conductive Layer 71 Conductive Particles 72 Copper-tin Layer 159121.doc -41 -
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| KR (1) | KR101815336B1 (en) |
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| TWI574283B (en) * | 2012-12-28 | 2017-03-11 | 積水化學工業股份有限公司 | Organic and inorganic mixed particles, conductive particles, conductive materials and connecting structures |
| TWI740807B (en) * | 2014-10-29 | 2021-10-01 | 日商迪睿合股份有限公司 | Conductive material, connection structure, and manufacturing method of connection structure |
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| CN104221223B (en) * | 2012-06-25 | 2017-07-04 | 株式会社村田制作所 | Anisotropic conductive sheet and use its method for joining electrode |
| JP6397742B2 (en) * | 2013-12-03 | 2018-09-26 | 積水化学工業株式会社 | Conductive particles, conductive materials, and connection structures |
| KR20160106562A (en) * | 2014-01-08 | 2016-09-12 | 세키스이가가쿠 고교가부시키가이샤 | Conductive particles for back contact solar cell modules, conductive material, and solar cell module |
| US20160012931A1 (en) * | 2014-07-11 | 2016-01-14 | Tyco Electronics Corporation | Conductive Particle |
| WO2016121558A1 (en) * | 2015-01-28 | 2016-08-04 | 三菱マテリアル株式会社 | Silver-coated particles and method for producing same |
| JP6777405B2 (en) * | 2015-03-03 | 2020-10-28 | 積水化学工業株式会社 | Conductive particles, methods for producing conductive particles, conductive materials and connecting structures |
| CN107250308B (en) * | 2015-05-20 | 2019-10-25 | 积水化学工业株式会社 | Conductive adhesive material and conductive adhesive material with conductive substrate |
| CN104972110A (en) * | 2015-06-27 | 2015-10-14 | 铜陵铜基粉体科技有限公司 | Electromagnetic interference resistant spherical copper powder and method for manufacturing the same |
| CN106433558A (en) * | 2016-09-26 | 2017-02-22 | 麦科勒(滁州)新材料科技有限公司 | Bonding agent for electronic packaging and preparing method thereof |
| JP6962307B2 (en) * | 2018-12-10 | 2021-11-05 | 昭和電工マテリアルズ株式会社 | Conductive particles for anisotropic conductive adhesives |
| WO2020251043A1 (en) * | 2019-06-13 | 2020-12-17 | 積水化学工業株式会社 | Conductive particles, conductive material, and connection structure |
| JP7686958B2 (en) * | 2020-11-30 | 2025-06-03 | 富士フイルムビジネスイノベーション株式会社 | Resin particles |
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| CN100437838C (en) * | 2003-07-07 | 2008-11-26 | 积水化学工业株式会社 | Coated conductive particles, anisotropic conductive material, and conductive connection structure |
| JP4563110B2 (en) * | 2004-08-20 | 2010-10-13 | 積水化学工業株式会社 | Method for producing conductive fine particles |
| JP2006225692A (en) * | 2005-02-15 | 2006-08-31 | Mitsui Mining & Smelting Co Ltd | Tin-coated copper powder and composite conductive paste using the tin-coated copper powder |
| JP4860163B2 (en) * | 2005-02-15 | 2012-01-25 | 積水化学工業株式会社 | Method for producing conductive fine particles |
| JP2007242307A (en) * | 2006-03-06 | 2007-09-20 | Sekisui Chem Co Ltd | Conductive fine particles and anisotropic conductive materials |
| CN2904213Y (en) * | 2006-04-27 | 2007-05-23 | 番禺得意精密电子工业有限公司 | Conductive material |
| CN100469492C (en) * | 2006-09-15 | 2009-03-18 | 重庆华浩冶炼有限公司 | Preparation method of iron-bronze composite powder |
| JP4363480B2 (en) | 2006-11-15 | 2009-11-11 | 日立金属株式会社 | Rare earth permanent magnet |
| CN101088669B (en) * | 2007-07-18 | 2010-06-30 | 重庆扬子粉末冶金有限责任公司 | Bronze coated composite iron powder and its production process |
| JP4746116B2 (en) | 2008-10-14 | 2011-08-10 | 日本化学工業株式会社 | Conductive powder, conductive material containing the same, and method for producing conductive particles |
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| TWI574283B (en) * | 2012-12-28 | 2017-03-11 | 積水化學工業股份有限公司 | Organic and inorganic mixed particles, conductive particles, conductive materials and connecting structures |
| TWI740807B (en) * | 2014-10-29 | 2021-10-01 | 日商迪睿合股份有限公司 | Conductive material, connection structure, and manufacturing method of connection structure |
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| JPWO2012043472A1 (en) | 2014-02-06 |
| CN103124999B (en) | 2015-06-10 |
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| JP2012094532A (en) | 2012-05-17 |
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