201228046 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及半導體製程，尤其涉及一種發光二極體封裝 結構的製造方法。 【先前技術】 [0002] 很多發光二極體（L i ght Emi 11 i ng D i ode，LED)封裝 結構都包括反射杯結構，設置在LED發光二極體的周圍。 如圖1所示，在該反射杯1表面上往往形成有一層高反射 率的金屬膜2，以增加反射效果。但是該金屬膜2不易製 作，在鍍制所述金屬層的過程中容易導致LED發光二極體 封裝結構產生不良或失效，從而影響發光二極體封裝結 構的生產良率和出光效果。 【發明内容】 [0003] 有鑒於此，有必要提供一種能夠防止LED發光二極體封裝 結構不良或失效的發光二極體封裝結構的製造方法。 [0004] —種發光二極體封裝結構的製造方法，包括以下步驟： [0005] 提供封裝載體，該封裝載體上有兩個導線架，封裝載體 包括第一表面，該第一表面上形成有容置槽，容置槽由 底壁和側壁圍成； [0006] 提供遮罩，所述遮罩包括滑塊和與該滑塊連接並遮蓋該 滑塊的軟膜，所述軟膜為耐高溫的材料製成，所述滑塊 滑動，撐開軟膜遮住底壁； [0007] 利用金屬鍍膜技術在侧壁上形成金屬反射層； [0008] 移出該遮罩，將發光二極體晶片貼設於所述容置槽的底 099146192 表單編號A0101 第4頁/共18頁 0992079409-0 201228046 部，並與所述兩個導線架通過金屬導線電性連接； [0009] [0010] Ο [0011] [0012] [0013] Ο 形成封裝層，覆蓋所述發光二極體晶片，得到發光二極 體封裝結構。 發光一極體封裝結構的製造方法中，由於在鍍金屬反射 層的過程中提供了-個遮罩餘容置槽的絲，使得該 金屬反射層僅分佈在容置槽的側壁上，避免底壁受到鍵 膜的影響，防止LED發光二極體封裝結構產生不良或失效 ，從而提高發光二極體封裝結構的生產良率和增加出光 效果。 【實施方式】 以下將結合附圖對本發明作進一步的詳細說明。 凊參閱圖2至圖7 ’本發明實施方式提供的一種發光二極 體封裝結構的製造方法包括以下步驟。. 步驟S2G1 :提供-封裝載體丨！，該封裝載體丨丨上有兩個 導線架12。所述封裝載體u包括相對的第一表面iu及第 二表面112。該第一表面U1上形成有—容置槽113。所 述容置槽113由底壁114和側壁i 15圍成。所述底壁114和 側壁115可為一體成型或採用黏膠等方式固接，本實施方 式t，所述底壁114和側壁115—體成型。所述封裝載體 11可採用高導熱且電絕緣材料製成，該高導熱且電絕緣 材料可選自m、_、類鑽、環氧樹脂或魏氧 樹脂等。所述每個導線架12-端裸露在容置槽113的底壁 114上，另一端裸露在封裝載體u的第二表面112上。所 述導線架12可採用金屬或金屬合金製成。 099146192 表單編號A0101 0992079409-0 201228046 [0014] 步驟S202 ·•提供一遮罩2〇，將該遮罩20置於容置槽113 内’遮住底壁114。如圖8所示，所述遮罩20包括一個把 手21和多個滑塊22，把手21和滑塊22之間通過連桿23連 接’用一塊軟膜24遮蓋所述滑塊22和連桿23，所述軟膜 24為耐高溫的材料製成，軟膜24與所述滑塊22的外邊緣 固定連接，遮蓋住所述滑塊22。當下壓把手21時，連桿 23帶動滑塊22向四周滑動，撐開所述軟膜24遮蓋住整個 底壁114。可以理解的，所述遮罩2〇還可以設計成通入氣 體的方式控制所述滑塊22的滑動。 [0015] 步驟S203 :利用金屬鍍膜技術在側壁115上形成一金屬反 射層15。該金屬鍍膜技術為蒸鍍、離子鍍或磁控濺鍍。 所述金屬反射層15所用的材料可以為金、銀、銅、鉑、 紹、鎳、錫或鎂中的一種或幾種的混合。 [0016] 步驟S204 :提起把手21可以使得連桿23帶動滑塊22收縮 ，可以避免直接向上取出所邋遮罩2〇時，破壞所述金屬 反射層15。將發光二極體美片13貼設於所述容置槽113的 底壁114上或導線架12上。美體地’該發光二極體晶片13 可通過黏著膠固定於容置槽113的底壁η 4或導線架12上 。所述發光二極體晶片13通過金屬導線131與所述兩個導 線架12電性連接。值得說明的是，該發光二極體晶片 亦可以利用覆晶（flip-chip)或共晶（eutectic)的方式 電性連接所述兩個導線架12。優選地，所述金屬反射層 15能夠反射發光二極體晶片13發出的光線，以控制發光 二極體晶片13的出光方向。 [0017] 步驟S205 :在所述容置槽113内形成封裝層14，所述封 099146192 表單編號A0101 第6頁/共18頁 0992079409-0 201228046 裝層14的材質可以為石夕膠（silicone)、環氧樹脂 (epoxy)或二者的組合物。所述封裝層14還可以包含螢 光轉換材料，該螢光轉換材料可以為石榴石基螢光粉、 矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉 、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。所述封裝層 14可以保護發光二極體晶片13免受灰塵、水氣等影響。 這樣就形成了所述發光二極體封裝結構10。 ❹ Ο [0018] 本發明實施方式提供的發光二極體封裝結構的製造方法 中，由於在鍍金屬反射層的過程中提供了一個遮罩遮住 容置槽的底壁，使得該金屬反射層僅分佈在容置槽的側 壁上，避免底壁受到鍍膜的影響，防止LED發光二極體封 裝結構產生不良或失效，從而提高發光二極體封裝結構 的生產良率和增加出光效果。 [0019] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0020] 圖1是一種發光二極體封裝結構示意圖。 [0021] 圖2是本發明實施方式提供的一種發光二極體封裝結構的 製造方法流程圖。 [0022] 圖3至圖7是本發明實施方式提供的一種發光二極體封裝 結構的製造方法示意圖。 [0023] 圖8是本發明實施方式提供的遮罩的俯視圖。 【主要元件符號說明】 099146192 表單編號A0101 第7頁/共18頁 0992079409-0 201228046 [0024] 反射杯：1 [0025] 金屬膜：2 [0026] 發光二極體封裝結構：10 [0027] 封裝載體：11 [0028] 第一表面：11 1 [0029] 第二表面：11 2 [0030] 容置槽：1 1 3 [0031] 底壁：114 [0032] 侧壁：115 [0033] 導線架：12 [0034] 發光二極體晶片：13 [0035] 金屬導線：131 [0036] 封裝層：14 [0037] 金屬反射層：15 [0038] 遮罩：20 [0039] 把手：21 [0040] 滑塊：22 [0041] 連桿：23 [0042] 軟膜：24 099146192 表單編號A0101 第8頁/共18頁 0992079409-0201228046 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a semiconductor process, and more particularly to a method of fabricating a light emitting diode package structure. [Prior Art] [0002] Many LED illuminating diode packages include a reflective cup structure disposed around the LED light-emitting diode. As shown in Fig. 1, a high-reflection metal film 2 is often formed on the surface of the reflecting cup 1 to increase the reflection effect. However, the metal film 2 is not easy to be formed, and in the process of plating the metal layer, the LED light-emitting diode package structure is likely to be defective or failed, thereby affecting the production yield and the light-emitting effect of the light-emitting diode package structure. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a method of fabricating a light emitting diode package structure capable of preventing a defective or failed LED light emitting diode package structure. [0004] A method of fabricating a light emitting diode package structure, comprising the steps of: [0005] providing a package carrier having two lead frames thereon, the package carrier comprising a first surface, the first surface being formed with The accommodating groove is surrounded by the bottom wall and the side wall; [0006] providing a mask, the mask comprising a slider and a soft film connected to the slider and covering the slider, the soft film being high temperature resistant Made of a material, the slider slides to open the soft film to cover the bottom wall; [0007] forming a metal reflective layer on the sidewall by using a metal plating technique; [0008] removing the mask to affix the light emitting diode wafer The bottom of the accommodating groove is 099146192, the form number A0101, the fourth page, and the 18th page, 0992079409-0 201228046, and is electrically connected to the two lead frames through the metal wires; [0010] [0011] [0013] 封装 forming an encapsulation layer covering the light emitting diode wafer to obtain a light emitting diode package structure. In the manufacturing method of the light-emitting diode package structure, since a wire of the remaining space is provided in the process of plating the metal reflective layer, the metal reflective layer is only distributed on the sidewall of the receiving groove, avoiding the bottom. The wall is affected by the key film to prevent the LED light-emitting diode package structure from being defective or failed, thereby improving the production yield of the light-emitting diode package structure and increasing the light-emitting effect. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 2 to FIG. 7 , a method for fabricating a light emitting diode package structure according to an embodiment of the present invention includes the following steps. Step S2G1: Provide - package carrier 丨! There are two lead frames 12 on the package carrier. The package carrier u includes opposing first surface iu and second surface 112. A receiving groove 113 is formed on the first surface U1. The accommodating groove 113 is surrounded by a bottom wall 114 and a side wall i15. The bottom wall 114 and the side wall 115 may be integrally formed or fixed by means of adhesive or the like. In the embodiment t, the bottom wall 114 and the side wall 115 are integrally formed. The package carrier 11 may be made of a highly thermally conductive and electrically insulating material selected from the group consisting of m, _, diamond-like, epoxy or wei resin. Each of the lead frames 12-end is exposed on the bottom wall 114 of the accommodating groove 113, and the other end is exposed on the second surface 112 of the package carrier u. The lead frame 12 can be made of metal or a metal alloy. 099146192 Form No. A0101 0992079409-0 201228046 [0014] Step S202 • A mask 2 is provided, and the mask 20 is placed in the accommodating groove 113 to cover the bottom wall 114. As shown in FIG. 8, the mask 20 includes a handle 21 and a plurality of sliders 22, and the handle 21 and the slider 22 are connected by a connecting rod 23 to cover the slider 22 and the connecting rod 23 with a soft film 24. The soft film 24 is made of a material resistant to high temperature, and the soft film 24 is fixedly coupled to the outer edge of the slider 22 to cover the slider 22. When the handle 21 is pressed down, the link 23 drives the slider 22 to slide around, and the soft film 24 is spread to cover the entire bottom wall 114. It will be appreciated that the mask 2 can also be designed to control the sliding of the slider 22 by means of gas. [0015] Step S203: forming a metal reflective layer 15 on the sidewall 115 by a metal plating technique. The metal coating technology is evaporation, ion plating or magnetron sputtering. The material used for the metal reflective layer 15 may be a mixture of one or more of gold, silver, copper, platinum, lanthanum, nickel, tin or magnesium. [0016] Step S204: Lifting the handle 21 can cause the connecting rod 23 to bring the slider 22 to contract, so as to avoid damaging the metal reflective layer 15 when the 邋 mask 2 is directly taken up. The light-emitting diode piece 13 is attached to the bottom wall 114 of the accommodating groove 113 or the lead frame 12. The light-emitting diode chip 13 can be fixed to the bottom wall η 4 of the accommodating groove 113 or the lead frame 12 by an adhesive. The LED chip 13 is electrically connected to the two lead frames 12 via a metal wire 131. It should be noted that the LED chip can also be electrically connected to the two lead frames 12 by flip-chip or eutectic. Preferably, the metal reflective layer 15 is capable of reflecting light emitted from the LED array 13 to control the light outgoing direction of the LED array 13. [0017] Step S205: forming an encapsulation layer 14 in the accommodating groove 113, the seal 099146192 Form No. A0101 Page 6 / 18 pages 0992079409-0 201228046 The material of the layer 14 may be silicon cerium (silicone) , epoxy or a combination of the two. The encapsulation layer 14 may further comprise a fluorescent conversion material, which may be garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder. , thiogallate-based phosphor powder and nitride-based phosphor powder. The encapsulation layer 14 can protect the LED chip 13 from dust, moisture, and the like. Thus, the light emitting diode package structure 10 is formed. [0018] In the manufacturing method of the LED package structure provided by the embodiment of the present invention, the metal reflective layer is provided because a mask is provided to cover the bottom wall of the accommodating groove during the process of plating the metal reflective layer. It is only distributed on the sidewall of the accommodating groove to prevent the bottom wall from being affected by the coating, preventing the LED light-emitting diode package structure from being defective or failing, thereby improving the production yield of the light-emitting diode package structure and increasing the light-emitting effect. In addition, those skilled in the art can make other changes within the spirit of the present invention. Of course, all changes made in accordance with the spirit of the present invention should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0020] FIG. 1 is a schematic diagram of a light emitting diode package structure. 2 is a flow chart of a manufacturing method of a light emitting diode package structure according to an embodiment of the present invention. 3 to FIG. 7 are schematic diagrams showing a manufacturing method of a light emitting diode package structure according to an embodiment of the present invention. 8 is a plan view of a mask provided by an embodiment of the present invention. [Main component symbol description] 099146192 Form No. A0101 Page 7 of 18 0992079409-0 201228046 [0024] Reflective cup: 1 [0025] Metal film: 2 [0026] Light-emitting diode package structure: 10 [0027] Package Carrier: 11 [0028] First surface: 11 1 [0029] Second surface: 11 2 [0030] accommodating groove: 1 1 3 [0031] Bottom wall: 114 [0032] Side wall: 115 [0033] Lead frame : 12 [0034] Light-emitting diode wafer: 13 [0035] Metal wire: 131 [0036] Package layer: 14 [0037] Metal reflective layer: 15 [0038] Mask: 20 [0039] Handle: 21 [0040] Slider: 22 [0041] Connecting rod: 23 [0042] Soft film: 24 099146192 Form number A0101 Page 8 / Total 18 pages 0992079409-0