201228027 六、發明說明： 【發明所屬之技術領域】 本發明涉及氮化物半導體發光元件及其製造方法，尤其涉及 在具備供氮化物半導體層生長的結構的藍寶石基板上變形形成 圖案以使氮化物半導體層生長’從而減少晶體的缺陷並提高光輸 出的氮化物半導體發光元件及其製造方法。 【先前技術】 基礎基板取決於所需生長的薄膜的種類，而且基礎基板的晶 格常數和所要生長的薄膜的晶格常數之差可能導致生長晶體缺 陷，而這將成為阻礙外延層有效生長的因素。 因上述問題，一般而言，主要通過M〇CVD或MBE法，在 藍寶石基板上生長 AlGaP、InGaN、AlGaN、GaN、GaP/AlP、異 質結構；在InP基板上生長InP、InGaAs、GaAs、A1GaAs等；而 在 GaAs 基板上生長 GaAs GaAlAs、InGaP、InGaAlP 等。 在作為氮化物半導體的GaN的情況下，因藍寶石晶格常數和 ⑽的晶格常數相似，因此，基板主要使用藍寶石。 在可供氮化物生長的藍寶石基板上使氮化物生長之後，若施 加-定電源麟發光，而據報告稱：_般在具侧案的藍寶石基 板上生長相同氮化物結構時，其光輸出較之在—般平整基板上= 長的優秀。 根據圖案結構的不同，碳化物生長後的光輸出存在差異 為了獲彳禮之現有圖案更高的光輸丨，現在也進行著不斷的 ‘般結構示意圖 為Γί利賴寶石基板的瓜族碳化物系化合物半導體的 201228027 在藍寶石基板U上部形成〜祕層12，而在上述鄭 12上部的-部分依次形成活性（―層i3、p 層 曰 =電極層15。另外’在上述層12上部的未形成上述活性 13的部位，形成n型電極層16。在一般的led上若何 地將内部雜層產生的光提取至外部是至關重要的問題。 ，為了有效提取藍寶石基板及活性層沿縱向產生的光，進行了 形成透明電極或反射層等各種嘗試。 但疋，因相當一部分在活性層產生的光橫向傳播，因此，為 _巧現縱向提取，曾嘗試例如在半導體元件的層疊結構側壁形成 一定角度’以使上述触成為反射©的技術等，但其加工及費用 方面存在問題。 另外，為提高利用藍寶石基板的瓜組氮化物系化合物半導體 發光元T的光輸出，採用了倒裝晶片（flipchip)形式的元件結構， 而其光提取效率（extraetiGn effideney )因祕和藍寶石基板之間 的折射率差異，停留在約40%左右的水準。 如圖2所示，公開了通過加工藍寶石基板21表面形成凹凸結 _ 構，並在其上部形成包括活性層22等在内的半導體晶體層的led 結構。运通過在活性層22下方形成凹凸形狀的折射率介面，向外 部提取一部分在元件内部消滅的橫向的光。 另外，在藍寶石基板21上形成皿族氮化物系化合物半導體 時，因藍寶石基板21和m族氮化物系化合物半導體的晶格常數的 不匹配（miss fit)而產生電位。為防止上述現象，如圖如所示， 在藍寶石基板21表面形成凹凸結構並在其上形成〇3]^層23。如 圖3b所示為具備上述凹凸結構的藍寶石基板上形成LED的大致 工序0 5 201228027 即’右在如® 3b的a所示的具備凹凸結構的藍寶石基板2i 上形成GaN 23 ’則如b所示，在凹凸結構的上部及側部琢面 (facet)生長GaN24，而經過這樣的生長之後，獲得如^所示的 平整化了的GaN層23。 在這樣平整化了的GaN層23上部形成活性層22、第二導電 層25、第-電極26、第二電極27，以完成如d所示的發光二極體。 上述在利用圖案化藍寳石基板（Patterned Sapphire Substrate ’ PSS)生長半導體晶體層時，因在圖案上實際完成琢面 (facet)生長之後再進行平整化，因此，需為上述平整化進行相 當厚度的再生長。 另外，公開了在藍寶石基板上形成段差並在上述段差上面及 侧部生長π魏化㈣化合物半導體，⑽止㈣電位的結構 (WO2001-69663號）。但是’ μ差下端形成空間（v〇id)且為 了平整化生長層，需形成相對較厚的職氮化物系化合物半導體。 —另外’作為減少在藍寶石基板上再生長半導體晶體層時的缺 陷密度財法，湘ELOG及PENDEO料法。较，EL〇G需 要另外的遮罩層’ * PENDE0因在與基板的介面部位形成空洞 (void) ’因此，產生光提取效率的損失。 因此，最近公開了如圖4所示的在發光元件的基板31表面形 成有突出部32、第一導電層33、活性層34、第二導電層35、第 一電極36及第二電極37的發光元件形成諸多球形突出部幻，因 為基板31表面上的半球形突出部32的半球形突出部”整體形成 曲面，因此沒有上端部及侧部的區別，是沒有平整面的曲面型。 但是’在上述半球形突出部32表面不易生長族氮化物系化 合物半導體，且在形成發光元件的GaN平整化層32時不進行琢 面（facet)生長，另外’防止平整化的GaN層32的厚度相對較薄。 201228027 ,因此，具有板球杆形、半球形、梯形、三角形、金字塔形等 形狀的現有基板圖案形狀，在光提取效率方面存在一定的^制。 【發明内容】 案結：：：=:有技術之不足’通過改善基板的圖 本發明的另一目的在於提供一種發光元件製造方法，盆 =提从提取率的基板_案結構時，可容易控制上述圖案的 件，目樣實現的：提供一種氮化物半導體發光元 =層電r第—導電層上形成第-電極二= 案’其包括按-定間隔形成的-個以上201228027 VI. Field of the Invention: The present invention relates to a nitride semiconductor light-emitting device and a method of fabricating the same, and more particularly to a pattern formed on a sapphire substrate having a structure for growing a nitride semiconductor layer to form a nitride semiconductor A nitride semiconductor light-emitting element in which a layer grows to reduce crystal defects and improve light output, and a method of manufacturing the same. [Prior Art] The base substrate depends on the kind of film to be grown, and the difference between the lattice constant of the base substrate and the lattice constant of the film to be grown may cause growth of crystal defects, which will become an obstacle to effective growth of the epitaxial layer. factor. Due to the above problems, in general, AlGaP, InGaN, AlGaN, GaN, GaP/AlP, and heterostructures are grown on a sapphire substrate mainly by M〇CVD or MBE methods; InP, InGaAs, GaAs, A1GaAs, etc. are grown on the InP substrate. GaAs GaAlAs, InGaP, InGaAlP, and the like are grown on the GaAs substrate. In the case of GaN as a nitride semiconductor, since the sapphire lattice constant is similar to the lattice constant of (10), the substrate mainly uses sapphire. After the nitride is grown on the nitride-grown sapphire substrate, if a constant power supply is applied, it is reported that the light output is the same when the same nitride structure is grown on the sapphire substrate with the side case. It is on the flat substrate = long and excellent. Depending on the structure of the pattern, there is a difference in the light output after the growth of the carbide. In order to obtain a higher light transmission of the existing pattern of the ritual, it is now carrying out a continually schematic diagram of the cucurbit carbide of the 宝石ί 利赖宝石In the case of the compound semiconductor 201228027, the secret layer 12 is formed on the upper portion of the sapphire substrate U, and the active portion is formed in the upper portion of the above Zheng 12 ("layer i3, p layer 曰 = electrode layer 15. In addition, the upper portion of the above layer 12 is not The portion where the above activity 13 is formed forms the n-type electrode layer 16. It is a critical problem to extract the light generated by the internal impurity layer to the outside on a general led. In order to efficiently extract the sapphire substrate and the active layer in the longitudinal direction Various attempts have been made to form a transparent electrode or a reflective layer. However, since a considerable portion of the light generated in the active layer is laterally propagated, it has been attempted to form a side wall of a laminated structure of a semiconductor element, for example, in longitudinal extraction. At a certain angle 'the technique of making the above-mentioned touch become the reflection ©, but there are problems in processing and cost. In addition, in order to improve utilization The light output of the nitride group compound semiconductor light-emitting element T of the sapphire substrate adopts a flip-chip component structure, and the light extraction efficiency (extraetiGn effideney) is different from the refractive index difference between the sapphire substrate and the sapphire substrate. It is at a level of about 40%. As shown in Fig. 2, a led structure in which a concave-convex junction is formed by processing the surface of the sapphire substrate 21 and a semiconductor crystal layer including the active layer 22 or the like is formed on the upper portion thereof is disclosed. By forming a refractive index interface having an uneven shape under the active layer 22, a part of the lateral light that is destroyed inside the element is extracted to the outside. Further, when the dish nitride compound semiconductor is formed on the sapphire substrate 21, the sapphire substrate 21 and A mismatch in the lattice constant of the m-nitride-based compound semiconductor generates a potential. To prevent the above phenomenon, as shown in the figure, an uneven structure is formed on the surface of the sapphire substrate 21, and 〇3]^ is formed thereon. Layer 23. As shown in Fig. 3b, a rough process for forming an LED on a sapphire substrate having the above-described uneven structure is shown. GaN 23' is formed on the sapphire substrate 2i having the uneven structure shown by a of the 3b, and as shown by b, the GaN 24 is grown on the upper portion and the side surface of the uneven structure, and after such growth, The flattened GaN layer 23 is shown. The active layer 22, the second conductive layer 25, the first electrode 26, and the second electrode 27 are formed on the upper portion of the thus planarized GaN layer 23 to complete the display as shown in d. Light-emitting diodes. When the semiconductor crystal layer is grown by a patterned sapphire substrate (PSS), the planarization is performed after the facet growth is actually performed on the pattern. Therefore, the above-mentioned leveling is required. The regrowth of a considerable thickness is carried out. Further, a structure in which a step is formed on a sapphire substrate and a π-wei (4) compound semiconductor and (10) a (four) potential are grown on the side and the side of the step (WO2001-69663) is disclosed. However, when the lower end forms a space (v〇id) and the flattened growth layer is formed, a relatively thick nitride compound semiconductor is formed. - In addition, as a defect density method for reducing the length of a semiconductor crystal layer on a sapphire substrate, the Xiang ELOG and PENDEO methods. In contrast, EL〇G requires an additional mask layer '*PENDE0' because of the formation of voids in the interface portion with the substrate, thus causing a loss in light extraction efficiency. Therefore, recently, as shown in FIG. 4, the protrusion 32, the first conductive layer 33, the active layer 34, the second conductive layer 35, the first electrode 36, and the second electrode 37 are formed on the surface of the substrate 31 of the light-emitting element. The light-emitting element forms a plurality of spherical protrusions, because the hemispherical protrusions of the hemispherical protrusions 32 on the surface of the substrate 31 form a curved surface as a whole, so there is no difference between the upper end portion and the side portion, and there is no curved surface type without a flat surface. It is difficult to grow a group nitride-based compound semiconductor on the surface of the above-described hemispherical protrusion 32, and no facet growth is performed when the GaN planarization layer 32 of the light-emitting element is formed, and the thickness of the planarized GaN layer 32 is prevented from being relatively 201228027 Therefore, the shape of the existing substrate pattern having a shape of a spheroidal shape, a hemispherical shape, a trapezoidal shape, a triangular shape, a pyramid shape, or the like has a certain degree in light extraction efficiency. [Summary of the Invention]: =: There is a technical deficiencies 'A view of improving the substrate. Another object of the present invention is to provide a method for manufacturing a light-emitting element, the basin = when extracting the substrate from the extraction rate Of the pattern may be easily controlled member, mesh-like implementation of: providing a nitride semiconductor light emitting element of electrically = R & lt layer - is formed on the first conductive layer - two electrodes text = 'press comprising - predetermined intervals in - or more
Hit部的上部面下陷—魏度的下陷部。 ff本發明的優先特徵，上述基板為藍寶石基板。 率的形狀本4月的另優先特徵，上述突出部和下陷部為具備曲 上述==又—優先特徵，上述突出物率小於或大於 述突=3=1 _，以™咐倒大於上 用包=·=== 合物中的一種。 4_在内的二it、三元及四元化The upper part of the Hit part is sunken - the depression of Weidu. In a preferred feature of the invention, the substrate is a sapphire substrate. The shape of the rate is another priority feature of the present month. The above-mentioned protruding portion and the depressed portion are provided with the above-mentioned ==---priority feature, and the above-mentioned protrusion rate is less than or greater than the above-mentioned protrusion=3=1 _, and the TM is more than the upper one. Package =·=== One of the compounds. 2it, ternary and quaternary in 4_
S 201228027 -導輸__，嫩场成包括第 ,、 a第一導電層的氮化物半導體層，且在第一導 在於上極’而在第二導電層上形成第二_，其特徵 圖幸.X-:利用遮罩（MASK)在上述基板表面形成 Μ勺度下烘烤形成圖案的上述基板，以在上述圖案上 宰下陷部的圖案;侧形成突出部和下陷部的圖 3層、活性層、第二導電層;及形成上述第一電極層二 徵’在地彡侧卿，為了侧 損案的形成凹陷部的部分，具備與其對應的遮罩。 根據本發明的優先特徵，上述遮罩使用光刻膠（叹）、⑽、 SixNx、Metal薄膜中的一種。 根據本發_另_優先舰，在上補罩去除步驟，利用幹 式姓刻或濕式韻刻法去除遮罩。 的翁ΓίίΪ明的又—優先特徵’在包括基板及生長於上述基板 =匕物料mm化物轉統种，在上絲板上板 作，與上述第-導電層接觸的表面形成圖案 個以上突出部及從上述突出部的上部面下陷-定深度ΐ 上述構成的本發明，_在藍寳石基板上形成包括突出部及 ===，較之半球形、凹凸形、三角形等現有圖案結構， 獲付更局光提取效率。 另外，在形成突出部和凹陷料，在將要形成凹陷部的位置， 意深度蝴基板触烤工序職_，從而使凹陷部的 深度控制變得容易。 町 201228027 【實施方式】 下面，結合附圖對本發明氮化物半導體發光元件及其製造方 法的較佳實施例進行詳細說明。 圖5a為形成于本發明氮化物半導體發光元件的基板上的圖案 剖面圖；5b為形成于本義基板上關案的各種實施例剖面 圖，圖6為拍攝形成于本發明基板上的圖案的立體圖及平面圖； 圖7為本發明氮化辨導體魏元制面圖；圖8為本發明氮化 物半導體發光元件製造過程剖面圖。 本發明氮化物半導體發光元件，在基板1〇〇上形成包括第一 導電層、活性層、第二導電層的氮化物半導體層，且在第一導電 層上形成第-電極，而在第二導電層上形成第二電極，其特徵在 於.在上述第一導電層生長的基板表面，开》成具備突出部的圖案 且在上述突$部上面包括下陷—定深度的下陷部（subsidence)。 較佳地，基板100使用用於一般氮化物半導體發光元件的藍 寶石基板（sapphiresubstrate)，而此外，還可使用碳化矽（Sic)。 在本發明中，以藍寶石基板為實施例進行說明。 為提高光輸出，將在上述藍寳石基板1〇〇上形成圖案2〇〇，而 本發明的主要技術思想在於：形成包括突出部21〇和下陷部22〇 的圖案200。 為形成上述圖案，將使用蝕刻遮罩（MASK)，且遮罩由光 刻膠（photoresist，PR)、Si02、SixNx、Metal 薄膜等物質構成， 而在本實施例中，將使用最容易獲得的光刻膠在基板上形成圖案 (patterning)。為形成一定的圖案，利用曝光裝置進行曝光。在 此，遮罩的厚度根據上述基板的蝕刻深度的目標值改變光刻膠的 厚度。 201228027 通過蝕刻工藝蝕刻塗布形成一定圖案的遮罩的上述基板 100，以蝕刻未被塗布的基板區域。在此，為形成形成有突出部和 凹陷部的基板圖案，不在形成凹陷部的位置塗布遮罩完成蝕刻。 上述工藝與光刻法（photolithography)相同，因此，在此不再贅 述。 之後’若以一定溫度烘烤（backing)以加熱上述基板，則通 過光刻膠和基板的塌陷，形成下陷型的圖案2〇〇。此時，根據溫度 和時間的不同，獲得不同的圖案結構。 作為本發明較佳實施例，烘烤條件為攝氏100〜14度的溫度和 1〜5分鐘的時間。 如圖5b所示，突出部210的曲率可大於或小於下陷部22〇的 曲率，而上述下陷部220的深度可大於突出部高度。另外，如上 形成的基板上的上述圖案2〇〇排列可規則或不規則。 —形成圖t 200的上述基板100,可通過幹式钱刻或濕式姓刻進 打侧’以使基板和光刻膠一併被侧，最終形成包括突出部21〇 及=陷4 22〇賴案。此時，可通過不同侧刺或化學反應液 或氣體的使祕件，形成包括上述突出部21()和下陷部22〇的不 °此時’若對基板進行濕式_，貞_氣體使用 C12, BC13專C1系列氣體為宜。 如上所述，上述包括突出部21〇及下陷部22 述基板1GG上至少形成—個以ρ 成半i开述過下陷部22G增加表面積，而這與現有的形 ft 具有不_效果。在半球縣射，生長碳 化物的面積受到限制。 τ玍长反 但^本發明的圖案形成下陷部22〇和突出部， 面 構成且各部位的曲率大於〇，因此，可讀保更多的面積。因此，增 201228027 加可在突出部210和下陷部22〇生長的皿族氮化物系化合物半導 體的面積’從而提高效率。 用上述準備的基板生長第一導電層（n_GaN層）300、活性層 400及第二導電層（P-GaN層）400，以上述第二導電層表面形成 第一電極（p型電極層）6〇〇，且以未生長上述活性層和第二導電 層的第一導電層形成第二電極（p型電極層）7〇〇，從而製造氮化 物發光元件。 圖7為包括本發明具備包括突出部210和下陷部220的圖案 • 200的基板100的倒裝晶片（flip-chip)形式的發光元件剖面圖。 如圖所示’在包括多個曲面型突出部21〇和下陷部2〇〇的基板1〇〇 上形成n-GaN層300，而在上述n-GaN層表面依次形成活性 (active)層 400、p-GaN 層 500 及 p 型電極層 600。 另外，在未形成活性層400的n-GaN層300的部分區域形成 η型電極層。除上述基板1〇〇之外的結構，與其他羾族氮化物系化 合物半導體發光元件類似。 此時’形成於上述基板100上的皿族氮化物系化合物半導體 鲁 不限於GaN ’還有包括Α1Ν或InN在内的二元、三元及四元化合 物。 另外，形成本發明上述圖案200的基板1〇〇不僅適用於氮化 物系半導體發光元件，也適用於其他各種化合物半導體發光元件。 下面，詳細說明本發明氮化物半導體發光元件的製造方法的 較佳實施例。為在藍寶石基板100表面形成包括多個曲面型突出 部210及下陷部220的圖案200,在藍寶石基板100上塗布光刻膠 (photo resist，PR)之後’經過曝光(Expose)工序、顯影(Deveiop) 工序形成一定的圖案。此時，為了製作形成有上述突出部和凹陷 部的圖案，在塗布光刻膠之後曝光時，在最終形狀的凹陷部利用 201228027 遮罩曝光之後钱刻以使基本被侧。在此，在與凹陷部對應的位 置，通過不同騎度蝴凹陷部的深度，而且隨簡部的綱 容易形成凹陷部。即，需要較深凹陷部時，將相應部分钱刻的較 深，而在需要較淺凹陷部時，將相應部分钱刻的較淺，以形成凹 陷部。 、之後’通過侧工序將未形成_的上述基板_區域以形 成圖案之後，断輯（hardbaking)處理。上賴烤触可根^ 所需形狀以各種條件實施。—般條件為⑽度的溫度和W 分鐘的時間。 另卜钮彡述基板_利用幹式法。適當調節姓刻氣 體、工作Μ力及工作功料，而在本發_ —實施财，敍刻氣 體使用BC13 ’工作壓力為lmT()rr，工作功率為·。 ，通過上述侧過程絲形成於酵的遮罩以最終在基板⑽ 上形成包括突出部和下陷部的圖案綱之後，形成製作發光元件 所需的n-GaN層300、活性層4〇〇、p_GaN層5〇〇、p型電極層6〇〇 及i電極層7GG。上述n型電極層，在i^過钮刻p型電極層、第 二導電層及活性而露出第—導電層之後形成。 圖9為比較本發明和現有技術氮化物半導體發光元件的 出的曲線圖。 A表示平面形基板，B表料球形基板，而c表示本發明。 ^圖所不’較之在平面結構的基板上形成發光元件的A，在具有 =形表_基板上形祕光元㈣B，其絲高了約7〇%， 而杜之A ’在具備包括突出部和下陷部的圖案的基板上形成發光 的c ’其光輸出提高約9〇%以上。另外，較之半球形的b， 其光輸出提高約10〇/〇以上。 12 201228027 另外車乂之A ’在具有半球形表面的基板上形成發光元件的 B，其VF至增加約23%，而較之A，本發明的w值增加約祕。 另外較之B，VF值減少約10%以上。這表明通過使用包括突出 部42及下陷部48的基板，較之現有技術具備凹凸形或半球形圖 案的基板，在光效率和VF值等方面表現出優秀的性能。 上述構成的本發明’通過在形成於基板上圖案上具備在突出 ^下〆陷切度而成的下陷部，以增加生長於圖案的氮化物面 積，從而獲得較高的光提取效率。S 201228027 - Conductive __, the tender field comprises a nitride semiconductor layer comprising a first, a first conductive layer, and a second _ is formed on the second conductive layer at the first lead and a characteristic map thereof Fortunately, X-: using a mask (MASK) to form a patterned substrate on the surface of the substrate to form a pattern of the trap on the pattern; the layer 3 of the side forming the protrusion and the depressed portion The active layer, the second conductive layer, and the first electrode layer are formed on the mantle side, and a portion corresponding to the recessed portion of the side damage case is provided with a mask corresponding thereto. According to a preferred feature of the present invention, the mask uses one of a photoresist (sigh), (10), a SixNx, and a Metal film. According to the present invention, in the upper cover removal step, the mask is removed by a dry or wet rhyme method. The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And the invention of the above-described configuration from the upper surface of the above-mentioned protruding portion, _ forming a protruding portion and a === on the sapphire substrate, compared with the existing pattern structure such as a hemisphere, a concavo-convex shape, a triangle, etc. More efficient light extraction efficiency. Further, in forming the protruding portion and the recessed material, at the position where the depressed portion is to be formed, the depth of the substrate is touched, so that the depth control of the depressed portion is facilitated.町201228027 [Embodiment] Hereinafter, preferred embodiments of the nitride semiconductor light-emitting device of the present invention and a method for manufacturing the same will be described in detail with reference to the accompanying drawings. 5a is a cross-sectional view of a pattern formed on a substrate of a nitride semiconductor light-emitting device of the present invention; 5b is a cross-sectional view of various embodiments formed on a substrate of the present invention, and FIG. 6 is a perspective view of a pattern formed on a substrate of the present invention. 7 is a plan view of a nitrided conductor of the present invention; FIG. 8 is a cross-sectional view showing a process for fabricating a nitride semiconductor light-emitting device of the present invention. In the nitride semiconductor light-emitting device of the present invention, a nitride semiconductor layer including a first conductive layer, an active layer, and a second conductive layer is formed on the substrate 1 , and a first electrode is formed on the first conductive layer, and a second electrode is formed. A second electrode is formed on the conductive layer, and the surface of the substrate on which the first conductive layer is grown is formed into a pattern having a protruding portion and includes a depressed portion at a depth of the protrusion portion. Preferably, the substrate 100 uses a sapphire substrate for a general nitride semiconductor light-emitting element, and in addition, tantalum carbide (Sic) can also be used. In the present invention, a sapphire substrate will be described as an example. In order to increase the light output, a pattern 2 将 is formed on the sapphire substrate 1 〇〇, and the main technical idea of the present invention is to form a pattern 200 including the protrusion 21 〇 and the depressed portion 22 。. In order to form the above pattern, an etch mask (MASK) will be used, and the mask is composed of a photoresist (PR), SiO 2 , Six Nx, Metal film or the like, and in the present embodiment, it is most easily used. The photoresist is patterned on the substrate. In order to form a certain pattern, exposure is performed using an exposure device. Here, the thickness of the mask changes the thickness of the photoresist in accordance with the target value of the etching depth of the above substrate. 201228027 The above-described substrate 100 forming a patterned mask is etched by an etching process to etch an uncoated substrate region. Here, in order to form the substrate pattern in which the protruding portion and the depressed portion are formed, the mask is not applied to complete the etching at the position where the depressed portion is formed. The above process is the same as photolithography, and therefore, will not be described herein. Thereafter, if the substrate is heated at a certain temperature to heat the substrate, a depressed pattern 2 is formed by collapse of the photoresist and the substrate. At this time, different pattern structures are obtained depending on the temperature and time. As a preferred embodiment of the present invention, the baking conditions are a temperature of 100 to 14 degrees Celsius and a time of 1 to 5 minutes. As shown in Fig. 5b, the curvature of the protrusion 210 may be greater or smaller than the curvature of the depression 22, and the depth of the depression 220 may be greater than the height of the protrusion. Further, the above-described pattern 2 〇〇 arrangement on the substrate formed as above may be regular or irregular. - The above-mentioned substrate 100 forming the pattern t 200 can be inscribed on the side by a dry-type or wet-type name to make the substrate and the photoresist side by side, and finally formed to include the protrusion 21 and the depression. Lai case. At this time, the protrusions 21() and the depressed portions 22〇 may be formed by different side spurs or chemical reaction liquids or gases, and the substrate may be wet _, 贞 _ gas used. C12, BC13 special C1 series gas is suitable. As described above, the above-described projecting portion 21〇 and the depressed portion 22 are formed on at least one of the substrates 1GG, and the depressed portion 22G is increased by ρ in half, which has an effect on the existing shape. In the hemisphere county, the area of growing carbide is limited. The pattern of the present invention forms the depressed portion 22 and the protruding portion, and the surface is formed and the curvature of each portion is larger than 〇, so that more area can be read and protected. Therefore, the increase of 201228027 increases the area of the dish nitride compound semiconductor which can be grown in the protrusion 210 and the depressed portion 22, thereby improving the efficiency. A first conductive layer (n_GaN layer) 300, an active layer 400, and a second conductive layer (P-GaN layer) 400 are grown by using the substrate prepared above, and a first electrode (p-type electrode layer) 6 is formed on the surface of the second conductive layer. Then, a second electrode (p-type electrode layer) 7 is formed by the first conductive layer in which the above-described active layer and the second conductive layer are not grown, thereby fabricating a nitride light-emitting element. Fig. 7 is a cross-sectional view of a light-emitting element in the form of a flip-chip including a substrate 100 having a pattern 200 of a projection 210 and a depressed portion 220 of the present invention. As shown in the figure, the n-GaN layer 300 is formed on the substrate 1 including the plurality of curved protrusions 21 and the depressed portion 2, and the active layer 400 is sequentially formed on the surface of the n-GaN layer. , p-GaN layer 500 and p-type electrode layer 600. Further, an n-type electrode layer is formed in a partial region of the n-GaN layer 300 where the active layer 400 is not formed. The structure other than the above substrate 1 is similar to other lanthanide nitride compound semiconductor light-emitting elements. At this time, the dish nitride compound semiconductor formed on the substrate 100 is not limited to GaN', and binary, ternary, and quaternary compounds including Α1Ν or InN. Further, the substrate 1A forming the pattern 200 of the present invention is applicable not only to a nitride-based semiconductor light-emitting device but also to various other compound semiconductor light-emitting elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the method for producing a nitride semiconductor light-emitting device of the present invention will be described in detail. In order to form the pattern 200 including the plurality of curved protrusions 210 and the depressed portions 220 on the surface of the sapphire substrate 100, after applying a photoresist (PR) on the sapphire substrate 100, an exposure process and development (Deveiop) The process forms a certain pattern. At this time, in order to fabricate the pattern in which the above-mentioned projecting portion and the recessed portion are formed, when the photoresist is applied after the photoresist is applied, the recessed portion of the final shape is exposed to the mask by the 201228027 mask so as to be substantially side. Here, at a position corresponding to the depressed portion, the depth of the depressed portion is different by riding, and the depressed portion is easily formed with the outline of the simple portion. That is, when a deeper depressed portion is required, the corresponding portion is engraved deeper, and when a shallower depressed portion is required, the corresponding portion is lighter to form a depressed portion. Then, after the above-mentioned substrate_region which is not formed is formed into a pattern by a side process, a hardbaking process is performed. The desired shape is implemented in various conditions. The general condition is a temperature of (10) degrees and a time of W minutes. Another button to describe the substrate _ using the dry method. Appropriate adjustment of the surname of the gas, work and work, and in the implementation of the __ implementation of the gas, the use of BC13 ‘ working pressure is lmT () rr, the working power is ·. The n-GaN layer 300, the active layer 4, and the p_GaN required for fabricating the light-emitting element are formed by forming the mask of the leaven by the side process filament described above to finally form a pattern including the protrusion and the depressed portion on the substrate (10). The layer 5 〇〇, the p-type electrode layer 6 〇〇 and the i-electrode layer 7 GG. The n-type electrode layer is formed after the p-type electrode layer, the second conductive layer, and the active conductive layer are exposed. Fig. 9 is a graph comparing the present invention and a prior art nitride semiconductor light-emitting device. A denotes a planar substrate, B denotes a spherical substrate, and c denotes the present invention. ^The figure is not 'Compared to the A of the light-emitting element formed on the substrate of the planar structure, the shape of the light element (4) B on the substrate has a wire height of about 7〇%, and the Du A' is included The light output c' on the substrate of the pattern of the protruding portion and the depressed portion is increased by about 9% or more. In addition, the light output is increased by about 10 〇/〇 or more compared to the hemispherical b. 12 201228027 In addition, A' of the rut formed on the substrate having a hemispherical surface, the VF of the light-emitting element was increased by about 23%, and the value of w of the present invention was increased compared with A. In addition, compared to B, the VF value is reduced by about 10% or more. This indicates that by using the substrate including the protruding portion 42 and the depressed portion 48, excellent performance is exhibited in terms of light efficiency, VF value, and the like as compared with the prior art substrate having a concavo-convex or hemispherical pattern. The present invention having the above configuration has a depressed portion which is formed by being depressed at a protrusion on the pattern formed on the substrate to increase the nitride area grown in the pattern, thereby obtaining high light extraction efficiency.
j實施例侧以·本發明而非關，本領域的普通技術 人貝心理解，可以對本發明進行修改、變形或者等同替換，而 本發日_輯和翻，其均細蓋在本發__ 圍當中。 【圖式簡單說明】 件的-==从咖族碳化物系化合物半導體發光元 半導=先=^_基板增職氮化物系化合物 圖3a及圖3b為根觀有麟在具備凹凸結 發光元件的過程概略剖面圖； 攝的基板Μ 圖4為根據另一現有技術在具備半球形的基板上形 件的過程概略剖面圖； 毛九 圖 案剖面圖 圖5a為形成于本發明氮化物半導體發光元件的基板上的 圖5b n成于本㈣基板上__各種實侧剖面圖; =6為拍_成于本發明基板上的_社_及平 圖7為本發明氮化物半導體發光元件剖面圖； 201228027 圖8為本發明氮化物半導體發光元件製造過程剖面圖； 圖9為比較本發明和現有技術氮化物半導體發光元件的光輸出的 曲線圖。 【主要元件符號說明】 11基板 12 n-GaN 層 13 活性層 14 p-GaN 層 15 p型電極層 16 η型電極層 21基板 22活性層 23 GaN 層The embodiment of the present invention is not limited by the present invention, and those skilled in the art can understand that the present invention can be modified, modified or equivalently replaced, and the present invention is spliced in the present invention. _ Around the middle. [Simple description of the figure] -== From the gamma carbide compound semiconductor luminescence semi-conductor = first = ^ _ substrate to increase the nitride compound Figure 3a and Figure 3b is the root of the argon in the presence of concave and convex luminescence FIG. 4 is a schematic cross-sectional view showing a process of forming a shape on a substrate having a hemispherical shape according to another prior art; FIG. 5a is a cross-sectional view of a pattern of a nine-dimensional pattern of a nitride semiconductor formed in the present invention. FIG. 5b on the substrate of the device is formed on the (four) substrate __ various solid side cross-sectional views; = 6 is taken on the substrate of the present invention, and the flat view 7 is a cross section of the nitride semiconductor light-emitting device of the present invention. Fig. 8 is a cross-sectional view showing the manufacturing process of the nitride semiconductor light-emitting device of the present invention; and Fig. 9 is a graph comparing the light output of the present invention and the prior art nitride semiconductor light-emitting device. [Major component symbol description] 11 substrate 12 n-GaN layer 13 active layer 14 p-GaN layer 15 p-type electrode layer 16 n-type electrode layer 21 substrate 22 active layer 23 GaN layer
24 GaN 25有突出部32 26第一電極 27第二電極 31基板 32突出部 33第一導電層 34活性層 35第二導電層 36 第一電極 37第二電極 100基板 201228027 200 突出部 210下陷部 220 下陷部 300第一導電層 400 活性層 500第二導電層 600 第一電極 700 第二電極24 GaN 25 has protrusion 32 26 first electrode 27 second electrode 31 substrate 32 protrusion 33 first conductive layer 34 active layer 35 second conductive layer 36 first electrode 37 second electrode 100 substrate 201228027 200 protruding portion 210 depressed portion 220 depressed portion 300 first conductive layer 400 active layer 500 second conductive layer 600 first electrode 700 second electrode