201213273 六、發明說明： 【發明所屬之技術領域】 t發明係關於一種有用於製作顯示裝置中之薄膜雷 體的氧化物燒結體及氧化物半導體薄臈。 【先前技術】 氧化物半導體除用作液晶顯示裝置、電漿顯 有機el _示裝置等顯示裝置中之薄膜電晶體的活：及 外，亦用作太陽電池及觸控面板等之電極。先前 u 下記載為「IGZO系」）作為氣 以 明之In-Ga-Zn—〇系， 透 化物半導體（參照非專利歧i )，進而亦有關於為改善 特性而添加有錫（Sn)之系的報告（參照專利文獻… 然而，就作為該等系之必要構成要素之録（Ga)為稀有元 素且價格亦較高等理由而言，於產業上大量使用時存在較 大限制。 較 作為未使用Ga之透明氧化物半導體，有In-Zn-O系 (參.、'、專利文獻3 )、In〜Zn_ Sn_ 〇系（參照專利文獻* )、 及Zn—Sn—〇系（參照專利文獻5)之報告。 [專利文獻1]日本特開2008_ 28〇216號公報 [專利文獻2]日本特開2〇1〇_丨184〇7號公報 [專利文獻3]日本特開2〇〇7_ 142195號公報 [專利文獻4]日本特開2〇〇8_ 243928號公報 [專利文獻5]日本特開2〇〇7_ 142196號公報 [非專利文獻 1]自然（Nature) 432，p488— 492，1〇 月 2004 201213273 【發明内容】 於上述專利文獻3〜5所記載之氧化物半導體中，未使 用作為IGZO系之必須播忐亚丰+ ^ 肩構成要素之（ja，於製造成本方面有 利’但會有電阻率隨時間變化等環境穩定性不良等問題。 作為IGZO系之其他必須構成要素之鋅（a )為易揮發 疋素’因製造燒結體時之揮發所引起之燒結體密度下降、 因濺鑛成膜時之揮發所引起之與乾組成之偏差、膜之電阻 率隨時間變化等，成為抑制膜之穩定性之主要原因' :此，本發明之課題在於提供一種不含有稀有資源且 :價^鎵（Ga)、及易揮發且於膜之穩定性方面有問題之 (Zn)的氧化物半導體膜製造用之氧化物燒結體。又， 本發明之其他課題在於提供一箱且古命—= 同之組成之氧化物半導體薄膜氧化物燒結體相 本發明人為解決上述問題經潛心研究後，結果發現使 用特定之2價金屬代替易揮發之辞（Zn)，使用特定之3價 或4價金屬代替稀有且高價格之元素鎵（Ga)，進而調整談 燒結體或膜之製造條件等，藉此獲得不二 燒結體及氧化:半(二之膜氧化物半導體膜製造用之氧化物 "以上述見解為基礎而完成之本發明於一態 =燒結體，其係由3價銦離子(ίη3+)'2 父中，X表示選自峋，'一中之子(:） 广3價金屬離子（γ3”(其中，Y表示選自B、Y cr 之i種以上之元素）或4價金屬離子（广）（其中，Z表 4 201213273 示選自Si、Ge、Ti、Zr中之1種以上之元素）、及氧離子（ο2 —)所構成，3價銦離子（ΐη3+ )、2價金屬離子（χ2+ )、3 價金屬離子（Υ3+)、及4價金屬離子（Ζ4+)之原子數比分 別滿足 0.2S [Ιη3 + ]/ {[Ιη3+] + [χ2+] + [γ3 + ] + [Ζ4 + ]}各 〇 8、〇 夏 $ [Χ2+] / {[Ιη3 + ] + [Χ2 + ] + [γ3 + ] + [Ζ4 + ]} $ 〇.5 、及 〇」各 {[Y3 + ] + [Z4 + ]}/ {[Ιη3 + ] + [Χ2 + ] + [Υ3+] + [Ζ4 + ]} ^ 0.5 〇 本發明之氧化物燒結體於一實施形態中，相對密度為 9 8 %以上。 本發明之氧化物燒結體於另一實施形態中，體電阻為 3ηιΩ以下。 本發明於另一態樣中為一種氧化物半導體薄膜，其係 由3價銦離子（ΐη3+ )、2價金屬離子（χ2+)(其中，χ表示 選自Mg、Ca、Co及Μη中之1種以上之元素）、3價金屬 離子（Υ3+ )(其中，γ表示選自Β、γ、〇中之1種以上之 元素）或4價金屬離子（z4+)(其中，z表示選自Si、Ge、 Ti、Zr中之1種以上之元素）、及氧離子（〇2_ )所構成，3 價銦離子（In3+)、2價金屬離子（X2+)、3價金屬離子（γ3+)、 及4價金屬離子（Ζ4+)之原子數比分別滿足：〇.2$ [ιη3 + ] / {[Ιη3 + ] + [Χ2 + ] + [Υ3 + ] + [Ζ4 + ]} ^ 〇>8 . 0.1 ^ [Χ2 + ] / {[Ιη3 + ] + [Χ2 + ] + [Υ3 + ] + [Ζ4 + ]} $ 〇·5、及 〇」$ {[Y3+] + [z4+]}/ {[In3 + ] + [X2 + ] + [Y3 + ] + [z4 + ]}s〇 5。 本發明之氧化物半導體薄臈於一實施形態中，為非晶 質。 本發明之氧化物半導體薄膜於另一實施形態中，載子 201213273 濃度為 1 〇16〜l〇18cm- 3 » 本發明之氧化物半導體薄膜於再另一實施形態中， 移率為lcm2/Vs以上。 本發明於再另一態樣中，係一種具備有上述氧化物半 導體薄膜作為活性層之薄膜電晶體。 本發明於再另一態樣中，係一種具備有上述薄膜電晶 體之主動矩陣驅動顯示面板。 曰曰 根據本發明，可提供一種不含有稀有資源且高價格之 鎵（Ga)、及易揮發且於膜之穩定性方面有問題之鋅㈨ 的氧化物半導體膜製造用之氧化物燒結體。又，根據本發 明’可提供-種具有與該氧化物燒結體相㈤之组成之氧化 物半導體薄膜。 【實施方式】 (氧化物燒結體之組成） 本發明之氧化物燒結體係由3價銦離子（in3+)、2價 屬離子（X2+)(其中，x表示選自Mg、Ca、c〇及Μη中 1種以上之元素）、3價金屬離子（γ3+)(其中，Υ表示選 Cr中之1種以上之元素）或4價金屬離子（ζ4+ )( 中，ζ表示選自Si、Ge、Ti、Zr中之】種以上之元素）、 氧離子（〇”所構成…本發明之燒結體中包含：無: 避免含有之濃度程度例如達到各元素1Qppm左右含有通' 可獲得之原料之純化步驟中無法避免含有的元素、或於i 化物燒結體製造過程中無法避免混入的雜質元素, 3價銦離子（V)之原子數相對们價銦離子…3+) 6 201213273 2價金屬離子（χ2+)、3價金屬離子 子Γ 74+ 、 ’及4價金屬離 3+ 之合計原子數的比[Ιη^ / {[In ] + [χ2Ί + [γ3+] + [ζ4+]}為 〇 2 〜〇 8。若[ {[If ] + [X2+] + [Y3+] + m未達。·2,則製作㈣之相對密产 會變小、體電阻會變高、濺鍍時易發生異常放電 乂 /{[ιη3”+[χ、[γ3+]+[ζ，}超過 〇.8，則對該組成之 賤鍍所獲得之膜的載子濃度會變得過高，電晶體之丁 的開關比會變小。[Ιη3+]/ {[Ιη3+ΜΧ2>[γ、[ζ，}更理想 為:广“之範圍，進而理想為〇·3〜〇5之範圍。此處’: Πη ]表不銦之原子數，[χ2+]表示2價金屬離子（χ2+)之原 子數，[Υ3+]表* 3價金屬離子（γ3+)之原子數，[ζ4+]表二 4價金屬離子（Z4-)之原子數。 ’、 2價金屬離子（χ2+)之原子數相對於3價姻離子㈠。3+)、 2價金屬離子（χ2+)、3價金屬離子（巧）、及4價金屬離 子（Ζ“）之合計原子數的比[χ2+]/ {[Ιη3+] + [χ2+] + [γ3+卜 為 〇·1 〜0.5。若[乂2+]/{[1113+] + [乂2+] + 1^3+] + [24+]}未達 〇」， 則對該組成之靶進行濺鍍所獲得之膜的載子濃度會變得過 高，電晶體之通道層的開關比會變小。若[χ2+] / {[Ιη3Ί + [χ2+] + [γ3Ί + [ζ4+]}超過〇 5，則製作靶時之相對密度 會變小、體電阻會變高、濺鍍時易發生異常放電。[χ2+]^ {[Ιη>[Χ2 + ] + [Υ3>[Ζ4Ί^ 理想為 〇15〜〇4 之範圍，進 而理想為0.2〜0.35之範圍。 3價金屬離子（Υ3+)及4價金屬離子（ζ4+)之合計原 子數相對於3價銦離子（Ιη3+)、2價金屬離子（χ2+)β、3價 201213273 金屬離子（Υ3+)、及4價金屬離子（Ζ，之合計原子數的 tb {[Υ3+] + [Ζ4+]}/{[ΐη3+] + [χ^] + [γ3+] + [Ζ4+]}4 〇 5 〇 若{[Υ3Ί+[ζ4+]}/{[ιη3Ί+[χ2Ί+[Υ3Ί+[ζ4+]}未達 〇」，則對 該組成之靶進行濺鍍所獲得之膜的載子濃度會變得過高， 電晶體之通道層的開關比會變小。若丨[Υ3+] + [ζ4+]丨/ {[Ιη3 + ] + [Χ2+] + [Υ3+] + [Ζ4Ί}超過〇·5 ’則製作靶時之相對密度 會變小、體電阻會變高、濺鍍時易於發生異常放電。 {[Y3 + ] + [Z4 + ]}/{[In3>[x2 + ] + [Y3 + ] + [z4 + ]}更王里想為 〇 15 〜 〇·4之範圍’進而理想為0.2〜0.35之範圍。 (氧化物燒結體之相對密度） 氧化物燒結體之相對密度與濺鍍時表面之結球 (nodule)生成有關《若氧化物燒結體為低密度，則於將該 氧化物燒結體加工成靶而濺鍍成膜時，隨著濺鍍成膜之過 程，於表面產生銦之低級氧化物即突起狀之稱為結球的高 電阻部分，於其後濺鍍時易於成為異常放電之起點。於本 發明中，依組成之適當範圍或製造條件之適當化可使氧化 物燒結體之相對密度成為98%以上，只要為此程度之高密 度則幾乎無因減鑛時之結球所引起之不良影響。相對密度 較佳為99°/。以上，更佳為99.5%以上。 再者，氧化物燒結體之相對密度可藉由根據將氧化物 燒結體加工成特定形狀後之重量與外形尺寸所計算出之密 度除以該氧化物燒結體之理論密度而求得。 (氧化物燒結體之體電阻） 氧化物燒結體之體電阻與濺鍍時發生異常放電之容易 8 201213273 =中若=較高則於濺錄時易於發生異常放電。於 雷阳士也， *範圍或製造條件之適當化可使體 电尸成為3mftcm以下，σ 濺鑛時發生異常放電之二此程度之低體電阻則幾乎無 以 不良影響。體電阻較佳為2.7mQcm 以下，更佳為2‘5n^cm以下。 者體電阻可藉由四探針法並使用電阻率計而測定。 (氧化物燒結體之製造方法） 成塔.發月之各種組成之氧化物燒結體例如可藉由調整作 沪'、;斗之氧化銦、氧化鎂等各原料粉體之摻合比或原料粉 =粒徑、粉料間、燒結溫度、燒結_、燒結環境氣 體種類等條件而獲得。 、 想為原料粉之平均粒徑為1〜2”若平均粒徑超 :"广貝|]燒結體之密度難以提高，故而可單獨或以混合 r形式對該原料粉進行濕式微粉碎等，而使平均粒徑縮 ^左右於濕式混合粉碎前進行預燒以提高燒結 性亦較為有效。另-方面，難以獲取粒徑未達^爪之原料， 又’右粒徑過小則易於引起粒子間之凝聚而難以操作。此 處二原料粉之平均粒徑係指藉由雷射繞射式之測定方法所 測疋的值。較佳為利用喷霧乾燥機等對粉碎後之原料混合 粉進行造粒而提高流動性或成形性後，進行成型。成型可 採用通常之加壓成形或冷均壓加壓等方法。 其後，燒結成形物而獲得燒結體。較佳為於14〇〇〜16〇〇 。。下進行2〜20小時之燒結。藉此，可使相對密度成為㈣ 以上。若燒結溫度未達丨400〇c，則密度難以提高，若燒結 201213273 溫度超過1600C ’則由於構成成分元素之揮發等而使燒结 體之組成發生變化’或成為因揮發導致產生空隙而造成密 度下降的原因。燒結時之環境氣體可使用大氣，藉由抑制 自燒結體揮發之效果，可獲得高密度之燒結體。其中，藉 由燒結體之組成，即便將氧氣作為環境氣體亦可獲得充分 高密度之燒結體。 (濺鍍成膜） 可藉由對如上述所獲得之氧化物燒結體實施磨削或研 磨等加工而製成濺鍍用靶，藉由使用該濺鍍用靶進行成 膜，可形成具有與該靶相同組成之氧化物膜。較理想為藉 由於加工時，利用平面研磨等方法研磨表面而使表面粗糙 度（Ra )成為5 V m以下。藉由減小表面粗糙度可減少成 為異常放電之原因之結球生成的起點。 將濺鍍用靶貼附於銅製等支持板並設置於濺鍍裝置 内，於適當之真空度、環境氣體、濺鍍功率等適當條件下 進行濺鍍，藉此可獲得組成與靶幾乎相同之膜。 於濺鍍法之情形時，較理想為將成膜前之腔室内極限 真空度設為2X10 一 ％以下。若壓力過高，則有由於殘留環 境氣體中之雜質之影響而使所獲得之膜之遷移率下降的可 能性。 濺鍍軋體可使用氬氣及氧氣之混合氣體。調整混合氣 體中之氧氣濃度的方法，例如可藉由使用氬氣刚％之儲氣 罐、與氬氣中之氧氣為2%之健氣罐，並利用質量流量控 器適當設定自各自之儲氣罐對腔室之供給流量而進行。此 10 201213273 處，所謂混合氣體中之氧氣濃 v ^、 晨度意指氧分壓/(氧分壓+氬 为壓），亦等於以氧氣之流量 .— 咏以氧軋與虱氣之合計流量 者。氧氧濃度只要根據所期穿+ # π _ 望之载子濃度而適當改變即 可’典型可設為1〜3%，更血荆 又典型可設為1〜2%。 濺鍍氣體之總壓設為〇 3〜 #㈤ · 〇.8Pa左右。若總壓低於該 犯圍，則電漿放電難以進行 即便進行電漿放電，電漿亦 .史付不穩疋。又，若總壓高於 q於4 $e>圍，則產生成膜速度變 慢、對生產性造成不良影響等問題。 於乾尺寸為6英吋之愔形 價$時，以200〜1200W左右之濺201213273 VI. Description of the Invention: [Technical Field of the Invention] The t invention relates to an oxide sintered body and an oxide semiconductor thin film which are used for producing a thin film ray in a display device. [Prior Art] The oxide semiconductor is used as a thin film transistor in a display device such as a liquid crystal display device or a plasma display organic display device, and is also used as an electrode for a solar cell or a touch panel. In the previous section, the "IGZO system" is described as an In-Ga-Zn-antimony system, a permeable semiconductor (see Non-patent), and a system in which tin (Sn) is added to improve characteristics. Report (refer to the patent document... However, as a reason for the fact that the record (Ga) of the necessary components of these systems is a rare element and the price is also high, there is a large restriction in the industrial use. Examples of the transparent oxide semiconductor of Ga include In-Zn-O (see, ', Patent Document 3), In~Zn_Sn_〇 (see Patent Document*), and Zn-Sn-〇 (see Patent Document 5). [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. No. 2 〇〇 _ _ _ 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 _ _ _ _ _ _ [Patent Document 4] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. No. Hei. [Invention] The oxide semiconductor described in the above Patent Documents 3 to 5 It is not necessary to use it as an IGZO system. It is necessary to broadcast the Yafeng+^ shoulder component (ja, which is advantageous in terms of manufacturing cost), but there are problems such as poor stability of the resistivity with time, etc. As an additional component of the IGZO system. The zinc of the element (a) is a volatile volatilone', the density of the sintered body caused by the volatilization during the manufacture of the sintered body, the deviation from the dry composition caused by the volatilization during the film formation by sputtering, and the resistivity of the film with time. The change or the like is a factor that suppresses the stability of the film. Here, the object of the present invention is to provide a product which does not contain a rare resource and has a value of gallium (Ga), is volatile, and has a problem in stability of the film ( An oxide sintered body for producing an oxide semiconductor film of Zn). Further, another object of the present invention is to provide a sintered body of an oxide semiconductor thin film oxide having a composition of the same composition as that of the present invention. After painstaking research, it was found that the use of a specific divalent metal instead of the volatile word (Zn), using a specific trivalent or tetravalent metal instead of the rare and high-priced elemental gallium (Ga), and then adjust The sintered body or the production conditions of the film, etc., thereby obtaining the sintered body and the oxidation: half (the oxide for the production of the film oxide semiconductor film of the second film), the invention completed on the basis of the above findings, in one state = sintering Body, which is composed of trivalent indium ions (ίη3+)'2 parent, X represents a group selected from 峋, '一子(:) broad trivalent metal ion (γ3) (where Y represents a selected from B, Y cr Any of the above elements) or a tetravalent metal ion (wide) (wherein, Z, Table 4, 201213273, one or more elements selected from the group consisting of Si, Ge, Ti, and Zr) and oxygen ions (ο2 —) The atomic ratio of the trivalent indium ion (ΐη3+), the divalent metal ion (χ2+), the trivalent metal ion (Υ3+), and the tetravalent metal ion (Ζ4+) respectively satisfies 0.2S [Ιη3 + ]/ {[Ιη3+] + [χ2+] + [γ3 + ] + [Ζ4 + ]} 〇8, 〇夏$ [Χ2+] / {[Ιη3 + ] + [Χ2 + ] + [γ3 + ] + [Ζ4 + ]} $ 〇.5 , and 〇" each {[Y3 + ] + [Z4 + ]} / {[Ιη3 + ] + [Χ2 + ] + [Υ3+] + [Ζ4 + ]} ^ 0.5 〇 The oxide sintered body of the present invention is implemented in one embodiment In the form, the relative density is 98% or more. In another embodiment of the oxide sintered body of the present invention, the bulk resistance is 3 η Ω or less. In another aspect, the present invention is an oxide semiconductor thin film which is composed of a trivalent indium ion (ΐη3+) and a divalent metal ion (χ2+) (wherein χ represents one selected from the group consisting of Mg, Ca, Co, and Μn). Any of the above elements), a trivalent metal ion (Υ3+ ) (wherein γ represents one or more elements selected from the group consisting of ruthenium, γ, and osmium) or a tetravalent metal ion (z4+) (where z represents a selected from Si, a component of one or more of Ge, Ti, and Zr) and an oxygen ion (〇2_), a trivalent indium ion (In3+), a divalent metal ion (X2+), a trivalent metal ion (γ3+), and 4 The atomic ratio of the valence metal ion (Ζ4+) satisfies: 〇.2$ [ιη3 + ] / {[Ιη3 + ] + [Χ2 + ] + [Υ3 + ] + [Ζ4 + ]} ^ 〇>8 . 0.1 ^ [Χ2 + ] / {[Ιη3 + ] + [Χ2 + ] + [Υ3 + ] + [Ζ4 + ]} $ 〇·5, and 〇"$ {[Y3+] + [z4+]}/ {[In3 + ] + [X2 + ] + [Y3 + ] + [z4 + ]}s〇5. The oxide semiconductor thin film of the present invention is amorphous in one embodiment. In another embodiment of the present invention, the oxide semiconductor film of the present invention has a concentration of 1 〇 16 〜 16 - 18 cm - 3 . The oxide semiconductor film of the present invention has a mobility of 1 cm 2 /Vs in still another embodiment. the above. In still another aspect of the invention, a thin film transistor comprising the above oxide semiconductor film as an active layer is used. In still another aspect, the invention is an active matrix drive display panel provided with the above-described thin film transistor. According to the present invention, it is possible to provide an oxide sintered body for producing an oxide semiconductor film which does not contain rare resources and has a high price of gallium (Ga) and zinc (9) which is volatile and has a problem in film stability. Further, according to the present invention, an oxide semiconductor thin film having a composition of the oxide sintered body phase (5) can be provided. [Embodiment] (Composition of Oxide Sintered Body) The oxide sintering system of the present invention is composed of a trivalent indium ion (in3+) and a divalent ionic ion (X2+) (where x represents a selected from the group consisting of Mg, Ca, c〇, and Μn). One or more elements), a trivalent metal ion (γ3+) (wherein Υ represents one or more elements selected from Cr) or a tetravalent metal ion (ζ4+ ) (wherein ζ represents a selected from Si, Ge, Ti) And the composition of the oxygen ion (〇) in the Zr. The sintered body of the present invention comprises: None: a concentration step to avoid a concentration of, for example, about 1Qppm of each element, and a purification step of the raw material obtained It is unavoidable to contain elements, or impurity elements that cannot be avoided during the manufacturing process of the sintered body of i. The atomic number of trivalent indium ions (V) is relative to the price of indium ions...3+) 6 201213273 Divalent metal ions (χ2+) ), the ratio of the atomic number of the trivalent metal ion Γ 74+ , ' and the tetravalent metal to 3+ [Ιη^ / {[In ] + [χ2Ί + [γ3+] + [ζ4+]}) 〇2 〇 8. If [ {[If ] + [X2+] + [Y3+] + m is not reached. · 2, the relative density of the production (4) will become smaller and the body resistance will become higher. When the sputtering is prone to abnormal discharge 乂/{[ιη3"+[χ,[γ3+]+[ζ,} exceeds 〇.8, the carrier concentration of the film obtained by the ruthenium plating of the composition will become High, the switching ratio of the transistor will become smaller. [Ιη3+]/ {[Ιη3+ΜΧ2>[γ,[ζ,} is more ideally: wide", and ideally is the range of 〇·3~〇5. Here: ': Πη】 represents the atomic number of indium [χ2+] represents the atomic number of the divalent metal ion (χ2+), [Υ3+] table* the number of atoms of the trivalent metal ion (γ3+), [ζ4+] Table 2 The number of atoms of the tetravalent metal ion (Z4-). The total number of atoms of the divalent metal ion (χ2+) relative to the trivalent ion (1). 3+), the divalent metal ion (χ2+), the trivalent metal ion (clear), and the tetravalent metal ion (Ζ") The ratio of the number of atoms [χ2+]/ {[Ιη3+] + [χ2+] + [γ3+ Bu is 〇·1 to 0.5. If [乂2+]/{[1113+] + [乂2+] + 1^3+] + [24+]} is not reached, the film obtained by sputtering the target of the composition is loaded. The sub-concentration becomes too high, and the switching ratio of the channel layer of the transistor becomes small. If [χ2+] / {[Ιη3Ί + [χ2+] + [γ3Ί + [ζ4+]} exceeds 〇 5, the relative density at the time of making the target becomes small, the bulk resistance becomes high, and abnormal discharge is likely to occur during sputtering. [χ2+]^ {[Ιη>[Χ2 + ] + [Υ3>[Ζ4Ί^ Ideally ranges from 〇15 to 〇4, and ideally ranges from 0.2 to 0.35. The total number of atoms of the trivalent metal ion (Υ3+) and the tetravalent metal ion (ζ4+) is relative to the trivalent indium ion (Ιη3+), the divalent metal ion (χ2+)β, the trivalent 201213273 metal ion (Υ3+), and the tetravalent Metal ion (Ζ, the total number of atoms tb {[Υ3+] + [Ζ4+]}/{[ΐη3+] + [χ^] + [γ3+] + [Ζ4+]}4 〇5 〇{{Υ3Ί+[ζ4+ ]}/{[ιη3Ί+[χ2Ί+[Υ3Ί+[ζ4+]} is not reached", the carrier concentration of the film obtained by sputtering the target of the composition becomes too high, and the channel layer of the transistor The switch ratio will become smaller. If 丨[Υ3+] + [ζ4+]丨/ {[Ιη3 + ] + [Χ2+] + [Υ3+] + [Ζ4Ί} exceeds 〇·5 ', the relative density will be smaller when the target is produced. The body resistance will become high and abnormal discharge will occur easily during sputtering. {[Y3 + ] + [Z4 + ]}/{[In3>[x2 + ] + [Y3 + ] + [z4 + ]} The range of 〇15 to 〇4 is further preferably in the range of 0.2 to 0.35. (Relative density of oxide sintered body) The relative density of the oxide sintered body is related to the formation of nodule on the surface during sputtering. If the sintered body is low in density, the oxide sintered body is added When a target is formed and sputtered into a film, a low-level oxide of indium, that is, a high-resistance portion called a ball, which is formed in a bump shape on the surface, is likely to become a starting point of abnormal discharge after sputtering. In the present invention, depending on the appropriate range of the composition or the production conditions, the relative density of the oxide sintered body can be made 98% or more, and as long as the density is high for this degree, there is almost no cause of balling due to the reduction of ore. The relative density is preferably 99°/. or more, more preferably 99.5% or more. Further, the relative density of the oxide sintered body can be determined by the weight and the external dimension after processing the oxide sintered body into a specific shape. The calculated density is obtained by dividing the theoretical density of the oxide sintered body. (The body resistance of the oxide sintered body) The body resistance of the oxide sintered body and the possibility of abnormal discharge during sputtering 8 201213273 = 中若= Higher is prone to abnormal discharge during the splattering. In Leiyangshi, * the scope or manufacturing conditions can make the body corpse become below 3mftcm, and the abnormal discharge occurs when σ splashing is low. The electric resistance is hardly adversely affected. The bulk resistance is preferably 2.7 mQcm or less, more preferably 2'5 ncm or less. The bulk resistance can be measured by a four-probe method using a resistivity meter. Manufacturing method) The oxide sintered body of various compositions of the tower and the moon can be adjusted, for example, by adjusting the blending ratio of the raw material powders such as indium oxide and magnesium oxide, or the raw material powder = particle diameter, Obtained between the powder, the sintering temperature, the sintering _, and the type of the sintered environmental gas. I think that the average particle size of the raw material powder is 1 to 2". If the average particle diameter is too high: "Guangbei|] the density of the sintered body is difficult to increase, the raw material powder can be wet-pulverized separately or in a mixed r form. It is also effective to reduce the average particle diameter to the pre-sintering before the wet mixing and pulverization to improve the sinterability. On the other hand, it is difficult to obtain the raw material having a particle diameter of less than the claw, and the right particle size is too small to be easily caused. The aggregation between the particles is difficult to handle. Here, the average particle diameter of the two raw material powders is a value measured by a laser diffraction type measuring method, and it is preferred to mix the pulverized raw materials by a spray dryer or the like. The powder is granulated to improve fluidity or formability, and then molded. The molding may be carried out by a usual method such as press molding or cold pressure equalization. Thereafter, the molded product is sintered to obtain a sintered body. 〇~16〇〇.. Sintering is carried out for 2 to 20 hours. Thereby, the relative density can be (4) or more. If the sintering temperature is less than 〇400〇c, the density is difficult to increase. If the temperature of 201213273 exceeds 1600C' Due to the constituent elements The composition of the sintered body changes, or causes a decrease in density due to voids generated by volatilization. The ambient gas during sintering can use the atmosphere, and high density can be obtained by suppressing the effect of volatilization from the sintered body. In the sintered body, a sintered body having a sufficiently high density can be obtained by using oxygen as an ambient gas. (Sputter film formation) Grinding of the oxide sintered body obtained as described above can be performed. Or a film for sputtering can be formed by processing such as polishing, and an oxide film having the same composition as that of the target can be formed by using the sputtering target, and it is preferable to use a method such as planar polishing by processing. By polishing the surface, the surface roughness (Ra) is 5 Vm or less. By reducing the surface roughness, the starting point of the formation of the ball which is the cause of abnormal discharge can be reduced. The target for sputtering is attached to a support plate such as copper. In the sputtering apparatus, sputtering is performed under appropriate conditions such as appropriate vacuum degree, ambient gas, sputtering power, etc., whereby a film having almost the same composition as the target can be obtained. In the case of the film, it is preferable to set the ultimate vacuum degree in the chamber before film formation to 2×10% or less. If the pressure is too high, the mobility of the obtained film is lowered due to the influence of impurities in the residual ambient gas. The possibility of using a mixed gas of argon gas and oxygen for the sputtered rolling body, and adjusting the oxygen concentration in the mixed gas, for example, by using a gas storage tank of argon gas and oxygen in the argon gas is 2 % of the health tank, and use the mass flow controller to properly set the supply flow from the respective tank to the chamber. This 10 201213273, the so-called oxygen concentration in the mixed gas v ^, morning means oxygen Pressure / (oxygen partial pressure + argon pressure) is also equal to the flow rate of oxygen. - 咏 is the total flow of oxygen rolling and helium gas. The oxygen oxygen concentration is as long as the concentration of the carrier is + # π _ Appropriate change can be 'typically set to 1 to 3%, and more blood can be set to 1 to 2%. The total pressure of the sputtering gas is set to 〇 3~ #(五) · 〇.8Pa or so. If the total pressure is lower than the squad, the plasma discharge is difficult to carry out. Even if the plasma discharge is performed, the plasma is not stable. Further, when the total pressure is higher than q by 4 $ e >, the film formation speed is slow, and the productivity is adversely affected. When the dry size is 6 inches, the price is $200, and the splash is about 200~1200W.
鑛功率進行成膜。若減链功遙、两I 艰力早過小，則成膜速度較小、生 產性較差’相反，若濺鍍功率 又刀牛過大，則產生靶破裂等問題。 200〜1200W若換算成濺鍍The mine power is filmed. If the chain reduction is too long and the two I's too hard, the film formation speed is small and the productivity is poor. On the contrary, if the sputtering power is too large, problems such as target cracking occur. 200~1200W if converted to sputtering
干在度則為l.lW/cm〜6.6W /cm，較理想為3.2〜4 5W2 t / cm。此處’所謂濺鍍功率密 度係以濺鍍功率除以濺鍍勒 鱺靶之面積而獲得，由於即便為相The dryness is l.lW/cm~6.6W/cm, preferably 3.2~4 5W2 t / cm. Here, the so-called sputtering power density is obtained by dividing the sputtering power by the area of the sputtering target, since even the phase
同之滅鍍功率，濺鍍靶實際所A 員丨不所又之功率、成膜速度亦依濺 鐘把尺寸之不同而有所不同，、 故而為用以統一表達施加於 濺鑛乾上之功率的指標。 由氧化物燒結體獲得膜 于犋之方法，亦可使用真空蒸鍍 法、離子電鍍法、PLD (脈栴垂&甘&、 k脈衝雷射4鍍）法等，但於產業上 易利用者為滿足大面積、萬球士、时 償同速成膜、放電穩定性等主要條 件之DC磁控濺鍍法。 於濺鍍成膜時，I雷Λσ鈦I ^ .、、、需加熱基板。其原因在於即便不加 熱基板，亦可獲得相對离夕通软安 耵间之遷移率，又，無需耗費用以升 溫之時間或能量。若士為焚 力‘、，' 基板而濺鍍成膜，則所獲得之 201213273 膜成為非晶質。其中，，亦可期待藉由加熱基板而獲得與室 溫成膜後之退火相同之纟果而亦彳於基板加熱之狀態 下進行成膜。 ~ (氧化物膜之載子濃度） 氧化物膜之載子濃度係將該膜使用於電晶體之通道層 時與電晶體之各種特性有關聯。若載子濃度過高，則於電 晶體關閉日寺，亦會發生微小電流洩漏，導致開關比下降。 另一方面’若載子濃度過低，則流過電晶體之電流變小。 於本發明中，根據組成之適當範圍等，可使氧化物膜之載 子濃度成為1〇16〜10丨w3 ’只要為該範圍則可製作特性良 好之電晶體。 (氧化物膜之遷移率） 遷移率係電晶體之特性之中最重要的特性之一，較理 想為將氧化物丨$體用作電晶體之通道層之競爭材料的非 曰a矽之遷移率為lcm2/Vs以上。基本上，遷移率越高越佳。 根據組成之適當範圍等，本發明之氧化物膜可具有icm2/ Vs以上之遷移率，較佳為可具有3cm2/vs以上之遷移率， 更佳為可具有5cmvvs以上之遷移率。藉此，《為優於非 晶矽之特性，產業上之可應用性更高。 本發明之氧化物半導體薄膜例如可用作薄膜電晶體之 I1層又，可將使用上述製造方法所獲得之薄膜電晶體 用作主動元件，而用於主動矩陣驅動顯示面板。 [實施例] 以下共同揭示本發明之實施例與比較例，該等實施例 12 201213273 係為更好地理解本發明及其優點而提供，並無意欲限定本 發明。因此’本發明於本發明之技術思想範圍内包含實施 例以外之態樣或變形。 於下述實施例及比較例中，燒結體及膜之物性係藉由 以下方法而測定。 (A) 燒結體及膜之組成 使用SII Nanotechnology公司製造之型式SPS3000並藉 由ICP (高頻感應耦合電漿）分析法而求得。 (B) 燒結體之相對密度 根據重量及外形尺寸之測定結果、與來自構成元素之 理論密度而求得。 (C )燒結體之體電阻 藉由四探針法（Jis K7194 )，並使用NPS公司製造之 型式Σ — 5 +裝置而求得。 (D) 膜厚 使用段差計（Veeco公司製造，型式Dektak8 STYLUS PROFILER )而求得。 (E) 膜之載子濃度及遷移率 將成膜之玻璃基板切割成約1 〇mm見方，並於四角安带 銦電極，將其組裝於霍爾測定裝置（東陽技術公司製造， 型式Resitest8200 )上而測定。 (F )膜之結晶或非晶質結構 使用RIGAKU公司製造之RINT— 1100X射線繞射裝置 來判定結晶性。藉由該X射線繞射’未發現背景水平以上 13 201213273 之顯著之峰值’根據該結果判斷為非晶質。 (G)粉體之平均粒徑 粉體之平均粒徑係藉由島津製作所製造之sald_ 3 100而測定。 <實施例1 > 稱量氧化銦粉（平均粒徑KOvm)、氧化矽粉（平均粒 徑1 _0 // m )、及氧化鎂粉（平均粒徑i 〇 y m )以使金屬元 素之原子數比（In : Si : Mg)成為0.4 : 〇.3 : 〇·3，並進行 濕式混合粉碎。粉碎後之混合粉之平均粒徑為〇.8以爪。^ 用喷霧乾燥機對該混合粉進行造粒後，填充於金屬模具 中，加壓成形後，在大氣環境中以145〇它之高溫燒結丨〇小 時。將所獲得之燒結體加工成直徑6英忖、厚度6随之圓 盤狀而製成濺鍍靶。關於該靶，由重量與外形尺寸之測定 結果與理論密度來計算相對密度，結果為99.5%。又，藉由 四探針法所測定之燒結體之體電阻為2 2mi2cm。 使用銦作為焊料而將上述所製作之濺鍍靶貼附於銅製 支持板，並設置於DC磁控濺鍍裝置（ANELVA製造之SPL — 500濺鍍裝置）。玻璃基板係使用康寧1737，將濺鍍條件 設為：基板溫度25°C、極限壓力i‘2xl0-4Pa、環境氣體 Ar99%、氧氣1%、濺鍍壓力（總壓）〇5Pa'施加電力5〇〇w， 而製作膜厚約1 〇〇nm之薄膜。於氧化物半導體薄膜之成膜 時未發現異常放電。 對所獲得之膜進行霍爾測定，求得載子濃度及遷移 率又’藉由X射線繞射之測定結果，該膜為非晶質。 14 201213273 <實施例2〜實施例1 2 > 將原料粉之組成比設為表丨所記載之各個值除此以 外以與實施例丨相同之方式獲得氧化物燒結體及氧化 導體薄膜。-各自之相對密度、體電阻、載子濃度、遷移率 表1所不。又’燒結體及臈之組成分別與原料粉之組成 比相同。；亥等氧化物半導體薄膜之成膜時未發現異常放 $原料粉之組成比設為表i所記載之各個值，除此以With the same power, the power and film formation speed of the actual target of the sputtering target are also different depending on the size of the splashing clock. Therefore, it is used to uniformly express the applied to the splashing dry. The indicator of power. A method of obtaining a film from a sintered body by an oxide sintered body, a vacuum deposition method, an ion plating method, a PLD method, a pulsed laser, a k-pulse laser plating method, or the like may be used, but it is industrially easy. The user is a DC magnetron sputtering method that satisfies the main conditions such as large area, 10,000 balls, time-lapse film formation, and discharge stability. When the film is sputtered, I need to heat the substrate. The reason for this is that even if the substrate is not heated, the mobility between the eccentric soft ampere can be obtained, and the time or energy for raising the temperature is not required. If the resin is sputtered into a film by burning the ',,' substrate, the obtained 201213273 film becomes amorphous. Further, it is also expected to obtain the same effect as the annealing after film formation at room temperature by heating the substrate, and also to form a film in a state where the substrate is heated. ~ (Carbide concentration of oxide film) The carrier concentration of the oxide film is related to various characteristics of the transistor when the film is used in the channel layer of the transistor. If the carrier concentration is too high, a small current leakage will occur when the transistor is turned off, causing the switching ratio to drop. On the other hand, if the carrier concentration is too low, the current flowing through the transistor becomes small. In the present invention, the carrier concentration of the oxide film can be set to 1 〇 16 to 10 丨 w3 ′ depending on the appropriate range of the composition, etc., and a transistor having good characteristics can be produced as long as it is within this range. (Mobility of Oxide Membrane) Mobility is one of the most important characteristics among the characteristics of a transistor, and it is preferable to use a non-曰-矽 migration of a competing material in which a oxide 丨$ body is used as a channel layer of a transistor. The rate is above lcm2/Vs. Basically, the higher the mobility, the better. The oxide film of the present invention may have a mobility of icm2/Vs or more, preferably a mobility of 3 cm2/vs or more, and more preferably a mobility of 5 cmvv or more, depending on the appropriate range of composition and the like. In this way, "in order to outperform the characteristics of non-crystal, the industrial applicability is higher. The oxide semiconductor thin film of the present invention can be used, for example, as the I1 layer of the thin film transistor, and the thin film transistor obtained by the above manufacturing method can be used as an active element for the active matrix driving display panel. [Examples] The following examples and comparative examples of the present invention are collectively disclosed, which are provided to better understand the present invention and its advantages, and are not intended to limit the present invention. Therefore, the present invention encompasses aspects or modifications other than the embodiments within the scope of the technical idea of the present invention. In the following examples and comparative examples, the physical properties of the sintered body and the film were measured by the following methods. (A) Composition of sintered body and film The type SPS3000 manufactured by SII Nanotechnology Co., Ltd. was used and obtained by ICP (High Frequency Inductively Coupled Plasma) analysis. (B) Relative density of the sintered body The results of measurement based on the weight and the outer dimensions and the theoretical density from the constituent elements were obtained. (C) The bulk resistance of the sintered body was obtained by a four-probe method (Jis K7194) and using a type Σ-5+ device manufactured by NPS. (D) Film thickness Determined using a step meter (manufactured by Veeco, type Dektak8 STYLUS PROFILER). (E) Carrier concentration and mobility of the film The film-formed glass substrate was cut into about 1 〇 mm square, and an indium electrode was placed at the four corners, and assembled on a Hall measuring device (manufactured by Dongyang Technology Co., Ltd., type Resitest 8200). And measured. (F) Crystalline or amorphous structure of the film The crystallinity was judged using a RINT-1100 X-ray diffraction apparatus manufactured by RIGAKU Co., Ltd. By the X-ray diffraction 'no significant peak value above the background level 13 201213273' was found, it was judged to be amorphous based on the result. (G) Average particle diameter of the powder The average particle diameter of the powder was measured by sald_3 100 manufactured by Shimadzu Corporation. <Example 1 > Weighed indium oxide powder (average particle diameter KOvm), cerium oxide powder (average particle diameter 1 _0 // m ), and magnesium oxide powder (average particle diameter i 〇ym ) to make a metal element The atomic ratio (In : Si : Mg) was 0.4 : 〇.3 : 〇·3, and wet mixed pulverization was carried out. The average particle diameter of the pulverized mixed powder was 〇.8 in claws. ^ The mixed powder was granulated by a spray dryer, and then filled in a metal mold, and after press molding, it was sintered at a high temperature of 145 Torr in an atmosphere for a few hours. The obtained sintered body was processed into a sputtering target with a diameter of 6 inches and a thickness of 6 in a disk shape. Regarding the target, the relative density was calculated from the measurement results of the weight and the outer dimensions and the theoretical density, and as a result, it was 99.5%. Further, the bulk resistance of the sintered body measured by the four-probe method was 2 2 mi 2 cm. The sputtering target prepared above was attached to a copper support plate using indium as a solder, and was placed on a DC magnetron sputtering apparatus (SPL-500 sputtering apparatus manufactured by ANELVA). For the glass substrate, Corning 1737 was used, and the sputtering conditions were set to: substrate temperature 25 ° C, ultimate pressure i'2 x 10 -4 Pa, ambient gas Ar 99%, oxygen 1%, sputtering pressure (total pressure) 〇 5 Pa 'applied power 5 〇〇w, and a film having a film thickness of about 1 〇〇 nm is produced. No abnormal discharge was observed at the time of film formation of the oxide semiconductor film. The obtained film was subjected to Hall measurement to determine the carrier concentration and the mobility, and the film was amorphous by the measurement of X-ray diffraction. 14 201213273 <Example 2 to Example 1 2> An oxide sintered body and an oxide conductor film were obtained in the same manner as in Example 除 except that the composition ratio of the raw material powders was set to the respective values described in the Tables. - respective relative density, bulk resistance, carrier concentration, and mobility. Table 1 does not. Further, the composition of the sintered body and the crucible is the same as the composition ratio of the raw material powder. When the film formation of the oxide semiconductor film such as hai was not found, the composition ratio of the raw material powder was set to the values described in Table i,
:以與實施们相同之方式獲得氧化物燒結體及氧化物 +導體薄膜。各自之相斜&A .( 之相對密度、體電阻、載子濃度、遷移 毕如表1所示。又，& α ^ 現結體及膜之組成分別與原料粉之组 成比相同。 、 201213273 [表1 ] [In3+] [Si4+] [B3+] [Mg2+] [Ca2+] 相對密度 (%) 體電阻 (mQcm ) 載子濃度 (cm-3) 遷移率 (cm2/Vs ) 實施例1 0.4 0.3 0 0.3 0 99.5 2.2 4.9E+17 5.3 實施例2 0.4 0.5 0 0.1 0 99.0 2.4 3.7E+17 4.1 實施例3 0.4 0.1 0 0.5 0 99.2 0.8 6.8E+17 5.6 實施例4 0.4 0 0.3 0.3 0 98.7 2.1 3.9E+17 4.1 實施例5 0.4 0 0.5 0.1 0 98.3 2.7 2.3E+17 3.0 實施例6 0.4 0 0.1 0.5 0 99.2 1.8 6.3E+17 5.2 實施例7 0.4 0.3 0 0 0.3 99.6 1.7 4.9E+17 5.1 實施例8 0.4 0.5 0 0 0.1 99.4 2.5 3.0E+17 3.7 實施例9 0.4 0.1 0 0 0.5 99.3 2.0 5.1E+17 5.9 實施例10 0.2 0.4 0 0.4 0 98.3 2.9 4.8E+16 2.2 實施例11 0.6 0.2 0 0.2 0 99.4 0.6 7.2E+17 7.1 實施例12 0.8 0.1 0 0.1 0 99.6 0.3 8.7E+17 9.0 比較例1 0.1 0.45 0 0.45 0 91.5 6.8 2.1E+15 0.5 比較例2 0.9 0.05 0 0.05 0 99.3 0.3 8.0E+18 7.3 比較例3 0.6 0.05 0 0.35 0 99.4 0.8 3.6E+18 6.3 比較例4 υ.3 0.6 0 0.1 0 91.6 11.5 3.0E+15 0.7 比較例5 0.6 0 0.05 0.35 0 98.6 0.8 3.6E+18 3.2 比較例6 0.3 0 0.6 0.1 0 90.2 28.3 1.3E+15 0.5 比較例7 0.6 0.35 0 0.05 0 98.5 7.8 6.5E+15 3.8 比較例8 υ.3 0.1 0 0.6 0 92.1 5.1 7.0E+15 0.9 比較例9 0.6 0.35 0 0 0.05 98.1 6.1 8.2E+15 3.3 比較例10 0.3 0.1 0 0 0.6 91.3 4.6 7.7E+15 0.9 於實施例1〜12中，製作包含Mg& Ca作為2價金屬 離子（X2+ )之例、包含B作為3價金屬離子（Y3+ )之例' 包含Si作為4價金屬離子（ζ，之例的氧化物燒結體。然 而’即便製作包含Co或Μη作為2價金屬離子（Χ2+)、包 含Υ或Cr作為3價金屬離子（γ3+)、包含&、^或以作 為4價金屬離子（Ζ4+)的氧化物燒結體由於使用價數分 別相同之離子，故而理解為發揮與實施例i〜i2相同之效 果0 16 201213273 於實施例1〜12中，載子濃度處於1016〜1018cm-3之 範圍内，且遷移率為lcm2/Vs以上。 另一方面，於比較例1、4、6〜10中，載子濃度未達 1016cm_ 3。 又，於比較例 1、4、6、8、10中，遷移率未達1 cm2 / Vs。 又，於比較例2、3、5中，載子濃度超過1018cm_ 3。 【圖式簡單說明】 無 【主要元件符號說明】 無 17: An oxide sintered body and an oxide + conductor film were obtained in the same manner as in the embodiment. The relative density, the bulk resistance, the carrier concentration, and the migration are shown in Table 1. In addition, the composition of the < α ^ body and film is the same as the composition ratio of the raw material powder. , 201213273 [Table 1] [In3+] [Si4+] [B3+] [Mg2+] [Ca2+] Relative density (%) Volume resistance (mQcm) Carrier concentration (cm-3) Mobility (cm2/Vs) Example 1 0.4 0.3 0 0.3 0 99.5 2.2 4.9E+17 5.3 Example 2 0.4 0.5 0 0.1 0 99.0 2.4 3.7E+17 4.1 Example 3 0.4 0.1 0 0.5 0 99.2 0.8 6.8E+17 5.6 Example 4 0.4 0 0.3 0.3 0 98.7 2.1 3.9E+17 4.1 Example 5 0.4 0 0.5 0.1 0 98.3 2.7 2.3E+17 3.0 Example 6 0.4 0 0.1 0.5 0 99.2 1.8 6.3E+17 5.2 Example 7 0.4 0.3 0 0 0.3 99.6 1.7 4.9E+17 5.1 Example 8 0.4 0.5 0 0 0.1 99.4 2.5 3.0E+17 3.7 Example 9 0.4 0.1 0 0 0.5 99.3 2.0 5.1E+17 5.9 Example 10 0.2 0.4 0 0.4 0 98.3 2.9 4.8E+16 2.2 Example 11 0.6 0.2 0 0.2 0 99.4 0.6 7.2E+17 7.1 Example 12 0.8 0.1 0 0.1 0 99.6 0.3 8.7E+17 9.0 Comparative Example 1 0.1 0.45 0 0.45 0 91.5 6.8 2.1E+15 0.5 Comparative Example 2 0.9 0.05 0 0.05 0 99.3 0.3 8.0E+18 7. 3 Comparative Example 3 0.6 0.05 0 0.35 0 99.4 0.8 3.6E+18 6.3 Comparative Example 4 υ.3 0.6 0 0.1 0 91.6 11.5 3.0E+15 0.7 Comparative Example 5 0.6 0 0.05 0.35 0 98.6 0.8 3.6E+18 3.2 Comparative Example 6 0.3 0 0.6 0.1 0 90.2 28.3 1.3E+15 0.5 Comparative Example 7 0.6 0.35 0 0.05 0 98.5 7.8 6.5E+15 3.8 Comparative Example 8 υ.3 0.1 0 0.6 0 92.1 5.1 7.0E+15 0.9 Comparative Example 9 0.6 0.35 0 0 0.05 98.1 6.1 8.2E+15 3.3 Comparative Example 10 0.3 0.1 0 0 0.6 91.3 4.6 7.7E+15 0.9 In Examples 1 to 12, an example including Mg& Ca as a divalent metal ion (X2+) was produced, and B is an example of a trivalent metal ion (Y3+)' containing an oxide sintered body of Si as a tetravalent metal ion. However, even an oxide sintered body containing Co or Μη as a divalent metal ion (Χ2+), ruthenium or Cr as a trivalent metal ion (γ3+), containing &, or as a tetravalent metal ion (Ζ4+) is produced. Since the ions having the same valence are used, it is understood that the same effects as those of the examples i to i2 are exerted. 0 16 201213273 In the examples 1 to 12, the carrier concentration is in the range of 1016 to 1018 cm-3, and the mobility is Lcm2/Vs or more. On the other hand, in Comparative Examples 1, 4, and 6 to 10, the carrier concentration was less than 1016 cm 3 . Further, in Comparative Examples 1, 4, 6, 8, and 10, the mobility was less than 1 cm 2 /Vs. Further, in Comparative Examples 2, 3, and 5, the carrier concentration exceeded 1018 cm_3. [Simple description of the diagram] None [Key component symbol description] None 17