TW201210835A - Photoelectric converting device, photoelectrochemical cell, plgment for photoelectric converting device and pigment solution for photoeletric converting device - Google Patents
Photoelectric converting device, photoelectrochemical cell, plgment for photoelectric converting device and pigment solution for photoeletric converting device Download PDFInfo
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- C09B23/02—Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups
- C09B23/08—Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups more than three >CH- groups, e.g. polycarbocyanines
- C09B23/083—Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups more than three >CH- groups, e.g. polycarbocyanines five >CH- groups
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Abstract
Description
201210835 38254pif 六、發明說明: 本申請案是基於在2010年5月31號向曰本智慧財產 局提出申請之日本專利申請案特願2〇1〇_124〇2〇、在2〇1〇 年12月24號向曰本智慧財產局提出申請之曰本專利申請 案特願2010-287040,以及在2011年3月17號向日本智 慧財產局提出申請之曰本專利申請案特願2〇11_〇59911而 主張優先權2並在此參照該些專利申請案之内容以併入作 為本說明書的記載的 一部份。 【發明所屬之技術領域】 本發明是有關於轉換效率高、耐久性優異的光電轉換 元件以及光電化學電池,且也是有關於光電轉換元件用色 素以及光電轉換元件用色素溶液。 【先前技術】 光電轉換元件可使用於各種的光感測器、複印機、太 陽能電池等中。在光電轉換元件中,可使用金屬、半導體、 有機顏料或色素,或這些的組合等之各式各樣的方式,而 使其實用化。尤其是,利用非乾涸性的太陽能源的太陽能 電池並不需要燃料,且可利用無窮盡的乾淨能源,因此其 真正的實用化大大地被期待著。其中,矽系太陽能電池從 以前就進行研究開發,且因各國的政策的考量而普及地持 續發展著。但是,矽(silicon)為無機材料,對於產量 (throughput)及分子修飾(m〇iecuiar m〇dificatj〇n)都有其天 然的極限。 所以’色素增感型太陽能電池(Dye_Sensitized Solar 201210835 38254pif201210835 38254pif VI. Description of the invention: This application is based on the Japanese Patent Application No. 2〇1〇_124〇2〇, filed in the application for the Intellectual Property Office of Sakamoto on May 31, 2010. Patent application No. 2010-287040 filed on December 24th with the Sakamoto Intellectual Property Office, and the application for the patent application of the Japanese Intellectual Property Office on March 17, 2011. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; [Technical Field] The present invention relates to a photoelectric conversion element and a photoelectrochemical cell which are excellent in conversion efficiency and excellent in durability, and also relates to a coloring element for a photoelectric conversion element and a dye solution for a photoelectric conversion element. [Prior Art] The photoelectric conversion element can be used in various photo sensors, copying machines, solar cells, and the like. The photoelectric conversion element can be put into practical use by using various forms such as a metal, a semiconductor, an organic pigment or a dye, or a combination of these. In particular, solar cells using non-drying solar energy sources do not require fuel and can utilize endless clean energy, so their practical utility is greatly expected. Among them, tantalum solar cells have been researched and developed since the past, and have been widely developed due to the consideration of national policies. However, silicon is an inorganic material with natural limits for both throughput and molecular modification (m〇iecuiar m〇dificatj〇n). So 'dye sensitized solar cells (Dye_Sensitized Solar 201210835 38254pif
Cells)的研究被積極的進行。特別是,瑞士的洛桑工科大 學的Graetzel等人’開發出將由釕錯合物(ruthenium complex)形成的色素固定在多孔性氧化鈦薄膜的表面的色 素增感型太陽能電池,以實現常用非晶質矽的轉換效率。 因此,色素增感型太陽能電池一下子就吸引了世界的研究 者的注意。 專利文獻1中記載了’應用上述之技術,並使用以釕 錯合物色素而使之增感的半導體微粒子之色素增感光電轉 換元件。然而’習知的釕錯合物色素為使用可見光而能夠 進行光電轉換,但幾乎無法吸收大於700 nm以上長波長 的紅外光,因而在紅外區(infrared region)的光電轉換能 低。 在一提案中,提供可藉由使用具有特定結構的聚次甲 基(polymethine)色素,以在700 nm以上高波長的紅外區, 轉換效率高的光電轉換元件(例如,參照專利文獻2)。 另外,光電轉換元件必須是,在廣波長區的初期的轉 換效率高,而使用後轉換效率的降低少耐久性優異。可是, 在耐久性這個部分,於專利文獻2記載的光電轉換元件中 並未充分地敘述。 因此,轉換效率高、耐久性優異的光電轉換元件及光 電化學電池是有必要的。而且,光電轉換元件用色素及光 電轉換元件用色素溶液也是有必要的。 [先前技術文獻] [專利文獻]The research of Cells was actively carried out. In particular, Graetzel et al. of the University of Technology in Lausanne, Switzerland, have developed a dye-sensitized solar cell in which a pigment formed of a ruthenium complex is fixed on the surface of a porous titanium oxide film to achieve a common amorphous state.转换 conversion efficiency. Therefore, the dye-sensitized solar cell has attracted the attention of researchers all over the world. Patent Document 1 describes a dye-sensitized photoelectric conversion element in which the above-described technique is applied and semiconductor fine particles sensitized with a ruthenium complex dye are used. However, the conventional erbium complex dye is capable of photoelectric conversion using visible light, but it is almost impossible to absorb infrared light having a long wavelength of more than 700 nm or longer, and thus the photoelectric conversion energy in the infrared region is low. In a proposal, a photoelectric conversion element having a high conversion efficiency by using a polymethine dye having a specific structure and having a high wavelength of 700 nm or more is provided (for example, refer to Patent Document 2). Further, the photoelectric conversion element must have high conversion efficiency in the initial stage in the wide wavelength region, and the reduction in conversion efficiency after use is less excellent in durability. However, the portion of the durability is not sufficiently described in the photoelectric conversion element described in Patent Document 2. Therefore, a photoelectric conversion element having high conversion efficiency and excellent durability and a photoelectrochemical cell are necessary. Further, a dye for a photoelectric conversion element and a dye solution for a photoelectric conversion element are also necessary. [Prior Technical Literature] [Patent Literature]
S 201210835 38254pif 專利文獻1 :美國專利第5463057號說明書 專利文獻2:日本專利第4217320號公報 【發明内容】 本發明的一課題在於,提供轉換效率高且耐久性優異 的光電轉換元件及光電化學電池。本發明的另一課題在於 提供光電轉換元件用色素及光電轉換元件用色素溶液。 本發明者等人重複銳意研究的結果發現,包含包括在 導電性支撐體上具有吸附有具有特定結構的聚次甲基色素 (色素化合物)的多孔質半導體微粒子層的感光體、電荷移 動體以及對極的積層結構的光電轉換元件,以及使用苴之 光電化學電池,於廣波長區域的轉換效率高,且耐久性優 異。本發明是基於上述知識來實行。 本發明的課題為根據以下的方式所達成。 _ <1>-種光電轉換元件,其包括具備有—般式⑴ 不的色素與半導體齡子的錢體層,上述色 ^ 5〜18的脂肪族基之—般式⑴所表示的化合物的色素tIn the present invention, an object of the present invention is to provide a photoelectric conversion element and a photoelectrochemical cell which have high conversion efficiency and excellent durability, and are disclosed in Japanese Patent No. 4, 427, 720. . Another object of the present invention is to provide a dye for a photoelectric conversion element and a dye solution for a photoelectric conversion element. As a result of intensive studies, the inventors of the present invention have found that a photoreceptor including a porous semiconductor fine particle layer having a polymethine dye (pigment compound) having a specific structure adsorbed on a conductive support, a charge transporting body, and The photoelectric conversion element having a multi-layered structure and a photoelectrochemical cell using a ruthenium have high conversion efficiency in a wide wavelength region and excellent durability. The present invention has been implemented based on the above knowledge. The object of the present invention is achieved in the following manner. _ <1> - a photoelectric conversion element comprising a body layer having a dye of a general formula (1) and a semiconductor body, and a compound represented by the formula (1) of the aliphatic group of the above color 5 to 18 Pigment t
X1 上述-般式⑴中’Q表示為4價的芳香族基 201210835 38254pifX1 In the above general formula (1), 'Q is represented as a tetravalent aromatic group 201210835 38254pif
Xj分別獨立表示為硫原子、氧原子或CR1r\其中,Rl、 R2分別獨立表示為氫原子、脂肪族基、芳香族基以碳原 子鍵結的雜環基,且其亦可被取代。R、R,分別獨立表示 為脂肪族基、芳香族基、以碳原子鍵結的雜環基,且其亦 可被取代。P1、p2分別獨立表示為色素殘基。W1表示為使 電荷中和所必需的相對離子。 <2>如<1>所述之光電轉換元件,其中上述碳數5〜18 的脂肪族基為分支烷基。 <3>如<1>或<2>所述之光電轉換元件,其中上述一般 式(1)中的Q表示為苯環或萘環。 <4>如<1>〜<3>的任一項所述之光電轉換元件,其中 上述一般式(1)中的P1及P2分別獨立為一般式(2)或一般 式(3)所表示。 [化2]Xj is independently represented by a sulfur atom, an oxygen atom or CR1r\, wherein R1 and R2 are each independently represented as a hydrogen atom, an aliphatic group, or a heterocyclic group in which an aromatic group is bonded by a carbon atom, and may be substituted. R and R are each independently represented by an aliphatic group, an aromatic group, a heterocyclic group bonded with a carbon atom, and may be substituted. P1 and p2 are each independently represented as a pigment residue. W1 represents the relative ions necessary to neutralize the charge. The photoelectric conversion element according to <1>, wherein the aliphatic group having 5 to 18 carbon atoms is a branched alkyl group. The photoelectric conversion element according to the above formula (1), wherein Q in the above general formula (1) is represented by a benzene ring or a naphthalene ring. <3> The photoelectric conversion element according to any one of the above-mentioned general formula (1), wherein P1 and P2 in the above general formula (1) are each independently a general formula (2) or a general formula (3). ) said. [Chemical 2]
一般式(2)General formula (2)
S 201210835 38254pif [化3] z O'S 201210835 38254pif [化3] z O'
—般式(3) 上述-般式⑵或-般式⑶巾’為氫原子或取 代基。η表示為〇〜4的整數,n為2以上時,vl可相同或 不同,也可相互鍵結以形成環。 匕I表示為S、NR9或CRY。其中,汉9表示為氣原子、 月曰肪私基、芳香族基或以碳原子鍵結的雜環基。r1()、尺” =為^子、脂肪絲、芳香族基或以碳原子鍵結的雜 衣基,其可相同或不同,也可相互鍵結以形成環。The above general formula (2) or the general formula (3) towel 'is a hydrogen atom or a substituent. η is an integer of 〇~4, and when n is 2 or more, vl may be the same or different, and may be bonded to each other to form a ring.匕I is expressed as S, NR9 or CRY. Among them, Han 9 is represented by a gas atom, a ruthenium, an aromatic group or a heterocyclic group bonded by a carbon atom. R1(), 尺" = is a ^, a fatty filament, an aromatic group or a carbon-bonded clothing group which may be the same or different and may be bonded to each other to form a ring.
Zf為顏祕、料族基或以碳原子鍵結 基,且其亦可有取代基。 作衣 ^〜R6及R8分別獨立表示為氣原子、脂肪族基 香麵基或雜環基,且其亦可有取代基。 R7為氧原子或有2個取代基的碳原子,2個取代基 '梅特(Hammett)法則之取代常數(σρ )的和為正數。 201210835 38254pif [化4]Zf is a pigment, a group or a carbon atom-bonding group, and it may have a substituent. The clothes R to R6 and R8 are each independently represented by a gas atom, an aliphatic aryl group or a heterocyclic group, and may have a substituent. R7 is an oxygen atom or a carbon atom having two substituents, and the sum of the substitution constants (σρ) of the two substituents 'Hammett' rule is a positive number. 201210835 38254pif [化4]
[化5] ο[化5] ο
上述一般式(4)或一般式(5)中,V1表示為氫原子或取 代基。η表示為0〜4的整數,η為2以上時,V1可相同或 不同,也可相互鍵結以形成環。 Υ表示為S、NR9或CR1GRU。其中,R9表示為氫原子、 脂肪族基、芳香族基或以碳原子鍵結的雜環基。R1Q、R11 表示為氫原子、脂肪族基、芳香族基或以碳原子鍵結的雜 環基,其可相同或不同,也可相互鍵結以形成環。 Z表示為脂肪族基、芳香族基或以碳原子鍵結的雜環 基,且其亦可有取代基。 <6>如<4>或<5>所述之光電轉換元件,其中上述V1有 酸性基。 <7>如<4>〜<6>的任一項所述之光電轉換元件,其中 上述V1為氫原子、5-羧基、5-磺酸基、5-曱基或4, 5-苯環 201210835 38254pif 縮合。 <8>如<6>或<7>所述之光電轉換元件,其中上述Z及 V1為酸性基或有酸性基的基團。 <9>如<4>、<6>〜<8>的任一項所述之光電轉換元件, 其中上述一般式(2)為一般式(6)所表示,上述一般式(3) 為一般式(7)所表示。 [化6] E11In the above general formula (4) or general formula (5), V1 is represented by a hydrogen atom or a substituent. η represents an integer of 0 to 4, and when η is 2 or more, V1 may be the same or different, and may be bonded to each other to form a ring. Υ is expressed as S, NR9 or CR1GRU. Wherein R9 represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom. R1Q and R11 are represented by a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom, which may be the same or different, or may be bonded to each other to form a ring. Z represents an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom, and may have a substituent. <6> The photoelectric conversion element according to <4> or <5>, wherein the above V1 has an acidic group. The photoelectric conversion element according to any one of <4>, wherein the above V1 is a hydrogen atom, a 5-carboxy group, a 5-sulfonic acid group, a 5-fluorenyl group or a 4, 5 - Benzene ring 201210835 38254pif condensation. The photoelectric conversion element according to <6>, wherein the above Z and V1 are an acidic group or a group having an acidic group. The photoelectric conversion element according to any one of <4>, wherein the general formula (2) is represented by the general formula (6), and the above general formula ( 3) is expressed by the general formula (7). [6] E11
[化7][Chemistry 7]
上述一般式(6)或一般式(7)中,Y、Z、R3〜R8為與 一般式(2)或一般式(3)的Y、Z、R3〜R8定義相同。V12 表示為酸性基。E11〜E13中至少一個表示為拉電子基。p 為2以上的整數。 <10>如<4>所述之光電轉換元件,其中上述一般式(2) 為一般式(8)所表示,上述一般式(3)為一般式(9)所表示。 11 201210835 38254pif [化8]In the above general formula (6) or general formula (7), Y, Z, and R3 to R8 are the same as defined in the general formula (2) or the general formula (3), Y, Z, and R3 to R8. V12 is represented as an acidic group. At least one of E11 to E13 is represented as a pull electron group. p is an integer of 2 or more. <10> The photoelectric conversion element according to <4>, wherein the general formula (2) is represented by a general formula (8), and the general formula (3) is represented by a general formula (9). 11 201210835 38254pif [化8]
一般式(8) [化9]General formula (8) [Chemical 9]
Rb 式A 式B 式C 式D 上述一般式(8)或一般式(9)中,Υ、Z、R3〜R8為與 一般式(2)或一般式(3)的Y、Z、R3〜R8定義相同。L為 以上述式A〜式D所表示,m表示為0、1或1以上的整 數,m為2以上時,L亦可分別不相同。上述式A中,Xa 表示為NRe、Ο、S,Re表示為氫原子或取代基。上述式 A及式C中,Ra〜Rd表示為酸性基。上述一般式(8)中, p表示為2以上的整數,Rx表示為酸性基。 <11>如<4>〜<10>的任一項所述之光電轉換元件,其Rb Formula A Formula B Formula C Formula D In the above general formula (8) or general formula (9), Υ, Z, R3 to R8 are Y, Z, R3 of the general formula (2) or the general formula (3). R8 is defined the same. L is represented by the above formulas A to D, and m is an integer of 0, 1, or 1 or more. When m is 2 or more, L may be different. In the above formula A, Xa represents NRe, Ο, S, and Re represents a hydrogen atom or a substituent. In the above formulas A and C, Ra to Rd are represented by an acidic group. In the above general formula (8), p represents an integer of 2 or more, and Rx represents an acidic group. The photoelectric conversion element according to any one of <4> to <10>, wherein
12 S 201210835 38254pif 中上述Y表示為S、NCH3或C(CH3)2,Z表示為碳數5〜 18的脂肪族基。 〈12>如<4>、<6>〜〈11〉的任一項所述之光電轉換元件 ,其中上述式R7為式(10)〜式(13)的任一所表示。 [化 11]12 S 201210835 38254pif The above Y is represented by S, NCH3 or C(CH3)2, and Z is represented by an aliphatic group having 5 to 18 carbon atoms. The photoelectric conversion element according to any one of the above-mentioned formulas, wherein the formula R7 is represented by any one of the formulas (10) to (13). [化11]
)^=S | π II)^=S | π II
〇 ^COORf NC C00Rf RfOOC 人 COORf NC 人CN 一般式(10) -般式⑴) -般式⑽ 一般式⑽ 上述式(10)〜式(13)中,Rf表示為氫原子或取代基。 <13>如<4>、<6>〜<12>的任一項所述之光電轉換元件 ,其中上述式R7為式(14)或式(15)所表示。 [化 12]〇 ^COORf NC C00Rf RfOOC Person COORf NC Human CN General Formula (10) General Formula (1) General Formula (10) General Formula (10) In the above formula (10) to formula (13), Rf is represented by a hydrogen atom or a substituent. The photoelectric conversion element according to any one of <4>, wherein the above formula R7 is represented by the formula (14) or the formula (15). [化 12]
HOOC —般式(14) 一般式(15) <14>如<1>〜<13>的任-項輯之光電轉換元件,其 中上述-般式⑴巾’ Q表不為苯環,χ1、χ2分別獨立表 示為硫原子、氡原子或C(CH3)2,R、R,分賴絲示為碳 數5〜18的脂肪族基。 13 201210835 38254pif <15>如<1>〜<14>的任一項所述之光電轉換元件,其 中上述半導體微粒子為氧化鈦微粒子。 <16>—種光電化學電池,包括<ι>〜<15>的任一項所 述之光電轉換元件。 <17>一種光電轉換元件用色素,其包括有碳數5〜18 的脂肪族基之一般式(1)所表示的化合物。 [化 13] V1 γ2 Ρ1=< X 产Ρ2 R R' —般式⑴ 上述一般式(1)中’ Q表示為4價的芳香族基。X1、 X2分別獨立表示為硫原子、氧原子或CWr2。其中,Ri、 R分別獨立表示為氫原子、脂肪族基、芳香族基、以碳原 子鍵結的雜被基,且其亦可被取代。r、尺’分別獨立表示 為脂肪族基、芳香族基、以碳原子鍵結的雜環基,且其亦 可被取代。P1、P2分別獨立表示為色素殘基。wl表示^使 電荷中和所必需的相對離子。 <18> —種光電轉換元件用色素溶液,其包括在有機溶 劑中,含有且已溶解的<17>所述之光電轉換元件用色素。 本發明可提供轉換效率尚且对久性優異的光電^換 元件及光電化學電池。另外,本發明可提供光電轉換元件 201210835 38254pif 用色素及光電轉換元件用色素溶液。 —為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉實例,並配合所附圖式作詳細說明如下。 【實施方式】 本發明者等人重複銳意研究的結果發現,具備有特定 的色素與半導體微粒子的感光體層之光電轉換元件以及 ,用其之光電轉換電池,光電轉換效率高,耐久性、特別 是光電轉換效率的降低少。本發明是基於上述的見解來實 行。 —接著,參照圖式來說明本發明之光電轉換元件的較佳 實例。如圖1所示,光電轉換元件10包括導電性支撐體p 以及感光體層2、電荷移動體層3與對極4,在導電性支撐 體1上依該順序配置而成。其中,上述導電性支撐體1及 感光體層2用以構成受光電極5。上述感光體層2具有半 導體微粒子22與增感色素21,而色素21的至少一部份吸 附於半導體微粒子22(色素在成為吸附平衡狀態時,也可 存在於一部份的電荷移動體層中。)。形成有感光體層2 的導電性支撐體1,在光電轉換元件10中作為作用電極的 發揮功能。以外部電路6使此光電轉換元件1〇工作,且亦 可作為光電化學電池1〇〇而使其作動。 受光電極5為包括導電性支撐體i及感光體層(半導 體膜)2的電極,而感光體層(半導體膜)2含有吸附塗設於 導電性支撐體上的色素21的半導體微粒子22。入射於感 光體層(半導體膜)2的光可使色素激發,而激發色素具有 15 201210835 38254pif 高能量的電子。因此,上述電子可從色素21被傳送至半導 體微粒子22的傳導帶,進而藉由擴散到達導電性支撐體 1 ’且此時色素21的分子會形成氧化體。電極上的電子在 外。卩電路邊工作,一邊回到色素氧化體,藉此作為光電 化學電池而進行作用。在這個情況下,受光電極5是作為 上述電池的負極而作業。 ^本發明的光電轉換元件為,在導電性支撐體上具有感 光體層’而此感光體層具有吸附有後述的特定色素之多孔 質半導體微粒子層。感光體層為視目的而可被設計成單層 結構’亦可是多層結構。另外,感光體層中的色素為可由 多種類的色素所混合者,但至少要使用後述的色素。在使 用含有吸附有上述色素的半導體微粒子作為本發明的光電 轉換=件的感光體層時,則可獲得對於廣波長區域的光的 感度高的光電轉換元件。在使用上述光電轉換元件作為光 電化學電池時,可獲得能得到高轉換效率,轉換效率的降 低少且耐久性優異的光電轉換元件。 (A)色素 (A1)—般式(1)的色素 在本發明的光電轉換元件中是使用以下述一般式(丄) 所表不的化合物的色素。上述色素可作為光電轉換元件用 而使用,且具有碳數5〜18的脂肪族基。脂肪族基較佳為 烷基、烯基或炔基,更佳為烷基或烯基。最較佳為烷基, 其例如可列舉戊基(pentyl)、己基(hexyl)、庚基(heptyl)、 辛基(octyl)、壬基(nonyl)、癸基(decyl)、十一基(而和以)、 201210835. j〇z,^*+pif 十二基(dodecyl)、十八基(octadecy!)、環己基(cycl〇hexyl)、 2-乙基己基(2-ethylhexyl)等。在烷基令較佳為分支烷基, 其例如是2-乙基己基、2_甲基己基(2_methyihexyl)、2_甲 基戊基(2-methyl pentyl)、3,5,5-三曱基己基 (3,5,5-trimethylhexyI) 、 2-環戊烷乙基 (2-CyCl〇pentaneethyl)、2-環己基乙基(2 cycl〇hexyIethyl) 等。由於具有碳數5〜18的烷基,可抑制水、親核劑 (nucleophile)所造成的色素的分解,並可抑制水接近吸附 點而使色餘半導雜粒子_所造成的耐久性的降低。 而且,由於能夠抑制色素彼此間的聚集或過度吸附,而可 抑制非效率的軸’且使光電職效率提冑。另外, 由於烧基為分支,因而可更顯著地獲得在上述效果中特別 是耐久性提高的效果。 [化 14] p X1 …X2HOOC (14) General formula (15) <14> The photoelectric conversion element of any one of <1> to <13>, wherein the above-mentioned general formula (1) towel is not a benzene ring Χ1 and χ2 are each independently represented by a sulfur atom, a ruthenium atom or C(CH3)2, and R and R are represented by an aliphatic group having a carbon number of 5 to 18. The photoelectric conversion element according to any one of <1>, wherein the semiconductor fine particles are titanium oxide fine particles. <16> A photoelectrochemical cell, comprising the photoelectric conversion element according to any one of <1> to <15>. <17> A dye for a photoelectric conversion element comprising a compound represented by the general formula (1) having an aliphatic group having 5 to 18 carbon atoms. V1 γ2 Ρ1=< X Ρ2 R R' General formula (1) In the above general formula (1), Q represents a tetravalent aromatic group. X1 and X2 are each independently represented by a sulfur atom, an oxygen atom or CWr2. Here, Ri and R are each independently represented by a hydrogen atom, an aliphatic group, an aromatic group, a hetero group bonded with a carbon atom, and may be substituted. r and 尺' are each independently represented by an aliphatic group, an aromatic group, a heterocyclic group bonded by a carbon atom, and may be substituted. P1 and P2 are each independently represented as a pigment residue. Wl denotes the relative ions necessary to neutralize the charge. <18> A dye solution for a photoelectric conversion element, which comprises a dye for a photoelectric conversion element according to <17> which is contained in an organic solvent. The present invention can provide an electro-optical device and a photoelectrochemical cell which are excellent in conversion efficiency and excellent in durability. Further, the present invention can provide a dye solution for a photoelectric conversion element 201210835 38254pif and a photoelectric conversion element. The above-described features and advantages of the present invention will become more apparent from the following description. [Embodiment] The inventors of the present invention have repeatedly conducted intensive studies and found that a photoelectric conversion element including a photoreceptor layer having a specific dye and semiconductor fine particles, and a photoelectric conversion battery using the same have high photoelectric conversion efficiency, durability, and particularly The reduction in photoelectric conversion efficiency is small. The present invention has been made based on the above findings. - Next, a preferred example of the photoelectric conversion element of the present invention will be described with reference to the drawings. As shown in Fig. 1, the photoelectric conversion element 10 includes a conductive support p and a photoreceptor layer 2, a charge transporting layer 3 and a counter electrode 4, which are arranged in this order on the conductive support 1. The conductive support 1 and the photoreceptor layer 2 constitute the light-receiving electrode 5. The photoreceptor layer 2 has the semiconductor fine particles 22 and the sensitizing dye 21, and at least a part of the dye 21 is adsorbed to the semiconductor fine particles 22 (the pigment may be present in a part of the charge transporting layer when it is in an adsorption equilibrium state). . The conductive support 1 on which the photoreceptor layer 2 is formed functions as a working electrode in the photoelectric conversion element 10. This photoelectric conversion element 1 is operated by an external circuit 6, and can also be operated as a photoelectrochemical cell. The light receiving electrode 5 is an electrode including a conductive support i and a photoreceptor layer (semiconductor film) 2, and the photoreceptor layer (semiconductor film) 2 contains semiconductor fine particles 22 which adsorb the dye 21 coated on the conductive support. The light incident on the photosensitive layer (semiconductor film) 2 excites the dye, and the excitation pigment has an electron of 15 201210835 38254pif high energy. Therefore, the above electrons can be transported from the dye 21 to the conduction band of the semiconductor fine particles 22, and further diffuse to the conductive support 1' and the molecules of the dye 21 form an oxidized body. The electrons on the electrodes are outside. When the 卩 circuit operates, it returns to the dye oxidant and acts as a photochemical battery. In this case, the light receiving electrode 5 operates as a negative electrode of the battery. The photoelectric conversion element of the present invention has a photosensitive layer </ RTI> on the conductive support, and the photoreceptor layer has a porous semiconductor fine particle layer in which a specific dye described later is adsorbed. The photoreceptor layer may be designed as a single layer structure for the purpose of 'or a multilayer structure'. Further, the dye in the photoreceptor layer may be a mixture of a plurality of types of dyes, but at least a dye described later is used. When a photoreceptor layer containing the semiconductor fine particles to which the above dye is adsorbed is used as the photoelectric conversion device of the present invention, a photoelectric conversion element having high sensitivity to light in a wide wavelength region can be obtained. When the above-mentioned photoelectric conversion element is used as the photoelectrochemical cell, a photoelectric conversion element which can obtain high conversion efficiency, has a small reduction in conversion efficiency, and is excellent in durability can be obtained. (A) Pigment (A1) The dye of the formula (1) In the photoelectric conversion element of the present invention, a dye of a compound represented by the following general formula (丄) is used. The above dye can be used as a photoelectric conversion element and has an aliphatic group having 5 to 18 carbon atoms. The aliphatic group is preferably an alkyl group, an alkenyl group or an alkynyl group, more preferably an alkyl group or an alkenyl group. Most preferred is an alkyl group, which may, for example, be pentyl, hexyl, heptyl, octyl, nonyl, decyl or eleven And, 201210835. j〇z, ^*+pif dodecyl, octadecy!, cycl〇hexyl, 2-ethylhexyl, and the like. The alkyl group is preferably a branched alkyl group, which is, for example, 2-ethylhexyl, 2-methylhexyl (2-meth hexyl), 2-methylpentyl, 3,5,5-triazine Cyclohexyl (3,5,5-trimethylhexyI), 2-cyclopentaneethyl (2-CyCl〇pentaneethyl), 2-cyclohexylethyl (2 cycl〇hexyIethyl), and the like. Since it has an alkyl group having a carbon number of 5 to 18, it can suppress decomposition of a pigment caused by water and a nucleophile, and can suppress the durability of water caused by the chromatic nucleophilic particles. reduce. Further, since the aggregation or excessive adsorption of the dyes can be suppressed, the inefficient axis ' can be suppressed and the photovoltaic efficiency can be improved. Further, since the burning base is branched, the effect of improving the durability particularly in the above effects can be obtained more remarkably. [Chem. 14] p X1 ... X2
IT I R N I R, W】 -般式(1) 朴 般式U)中,Q表示為至少四官能以上的芳香族基。 芳香族^的示例可列舉為芳香族烴與芳香族雜環。其中, 芳香族烴例如是笨、萘(naPhthalin)、蒽(anthraeene、)、菲 (phenanthrene)等,而芳香族雜環例如是蒽醌 (anthraqUin〇ne)、啼唾(carbazole) “比咬(pyridine)、啥琳 17 201210835 38254pif (quinoline)、噻吩(thiophene)、呋喃(furan) ' 二笨并听喃 (xanthene)、噻嗯(thianthrene)等,此外亦可在連結部分以 外具有取代基。以Q所表示的芳香族基較佳為芳香族炉, 更佳為苯或萘。在此,朝Q的#與N(R,)的鍵結,在圖=示 的式中也包含,在N(R’)位置X2進行鍵結且在χ2位置r' 進行鍵結的鍵結。 另外,X1、X2分別獨立表示為硫原子、氧原子或 CRi2。χΐ、X2較佳為硫原子或cr1r2,更佳為cr1r2: 其中,R1及R2分別獨立表示為氫原子、脂肪族基、芳香 族基或以碳原子鍵結的雜環基。以碳原子鍵結的雜環基, 例如可列舉啦咯(pyrrole)、呋喃、噻吩、咪唑(imidaz〇le)、 噁唑(oxazole)、噻唑(thiaz〇le)、吡唑(pyraz〇le)、異噁唑 (isoxazole)、異。塞。坐(isothiaz〇le)"比咬、塔耕(pyridazine)、 ,啶(pyrimidine)、呱喃(pyran)等。Ri、R2較佳為脂肪族基、 芳香族基。脂肪族基,較佳為烷基、烯基或炔基,更佳為 烷基或烯基。烷基可以列舉直鏈或分支的烷基,而較佳為 碳數5〜18的烷基(例如是,戊基、己基、庚基、辛基、壬 基、癸基、十一基、十二基、十八基 '環己基、2_乙基己 基等)。在烷基中,分支烷基為較佳,其例如是2_乙基己 基、2-曱基己基、2-甲基戊基、3, 5, 5-三曱基己基、2-環 戊烧乙基、2-環己基乙基等。因具有碳數5〜18的烧基, 可抑制水、親核劑所造成的色素的分解,並可抑制水接近 吸附點而使色素從半導體微粒子剝離所造成的耐久性的降 低。而且,由於能夠抑制色素彼此間的聚集或過度吸附, 201210835 ,可抑制非效率的電子移動,且使光電轉換效率提高 外,由於烧基為分支,因而可更顯著地獲得在上述效 特別是财久性提高的效果。㈣絲較佳絲、萘、策等。 子鍵立絲為脂肪族基、芳香族基或;原 t的環基,且其亦可被取代。以碳軒鍵結的雜穿 基’例如是鱗、咬喊、嗟吩、咪嗤、嗓唾、。塞嗤、吼t 異心上異。塞唾、σ比咬、β荅肼、σ密咬、狐喃等。R、R,較 佳為脂肪族基或芳香族基,芳香絲的碳原子數較佳為5 〜’更佳為5或6 1取代的芳香族基較佳為苯基、蔡 基等。脂祕絲佳為絲、縣或絲,更佳為燒基或 烯基,更較佳為碳數5〜18的烷基(例如是戊基、己基、庚 基、辛基、壬基、癸基、十一基、十二基、十八基環己 基、2-乙基己基等)。在烧基中,較佳為分支烧基,其例如 是2-乙基己基、2-甲基己基、2-曱基戊基、3, 5, 5_三曱基 己基、2-環戊烷乙基、2-環己基乙基等。因具有碳數5〜 18的烧基,可抑制水、親核劑(nucie〇phile)所造成的色素 的分解,並可抑制水接近吸附點而使色素從半導體微粒子 剝離所造成的耐久性的降低。而且,由於能夠抑制色素彼 此間的聚集或過度吸附,而可抑制非效率的電子移動,且 使光電轉換效率提高。另外,由於烷基為分支,因而可更 顯著地獲得在上述效果中特別是耐久性提高的效果。 1 2 卜 p、p表示為色素殘基。所謂色素殘基是指,與一般 式(1)的P、P以外的結構共同構成作為整體的色素化合 物所必需的原子群。P1及P2為直接鍵結或通過連結基進行 201210835. JOZJHpif 鍵結,以構成一般式(1)的色素。以pi及P2所形成的色素 (色素化合物)’例如是花青(Cyanine)、部花青素 (merocyanine)、玫紅花青素(rh〇dacyanine)、3 核部花青 素、allopolar、半花菁(hemicyanine)、桂皮(styryl)、氧雜 菁(oxonol)、:?匕青(cyanine)等的聚次曱基(polymethine)色 素、含有吖啶(acridine)、二苯并哌喃、硫二苯并哌喃 (thioxanthene)等的二芳基次曱基(diarylmethine)、三芳基 次曱基(triarylmethine)、香豆素(coumarin)、彀苯胺 (indoaniline)、靛酚(indophenol)、吡嗪(diazine)、噁嗪 (oxazine)、°塞0秦(thiazine)、0比洛並°比°各二酉同 (Diketopyrrolopyrrole)、靛藍(indigo)、蒽醌、茈 (perylene)、喹吖酮(Quinacridone)、萘醌 (naphthoquinone)、聯 π比唆(bipyridyl)、三聯 n比咬 (terpyridyl)、四聯·》比咬(tetrapyridyl)、啡琳(phenanthroline) 等。 較佳為,花青、部花青素、玫紅花青素、3核部花青 素、allopolar、半花菁、桂皮等。此時,也包括在花青中 形成色素的次甲基鍵上的取代基形成方酸環(squarylium ring)與克嗣酸環(croconium ring)的色素。關於上述色素的 詳細記載於 F、Μ、Harmer 著,JOHN WILEY & SONS 出 版社,紐約、倫敦1964年出刊的「Heterocyclic Compounds —Cyanine Dyes and Related Compounds」中。花青、部花 青素、玫紅花青素的一般式,較佳為以在美國專利第 5, 340, 694 號第 2卜 22 頁的(XI)、(XII)、(XIII)所表示。另IT I R N I R, W] - (1) In the general formula U), Q is an aromatic group having at least four or more functional groups. Examples of the aromatic compound include aromatic hydrocarbons and aromatic heterocyclic rings. Among them, the aromatic hydrocarbon is, for example, stupid, naphthene, anthraene, phenanthrene, etc., and the aromatic heterocyclic ring is, for example, anthraquinium (inhalaq Uin〇ne), carbazole (carbazole) Pyridine), 啥琳17 201210835 38254pif (quinoline), thiophene, furan (furan), xanthene, thianthrene, etc., in addition to having a substituent other than the linking moiety. The aromatic group represented by Q is preferably an aromatic furnace, more preferably benzene or naphthalene. Here, the bond of ## to N(R,) of Q is also included in the formula of Fig. (R') The position X2 is bonded and the bond is bonded at the χ2 position r'. Further, X1 and X2 are each independently represented by a sulfur atom, an oxygen atom or CRi2. χΐ and X2 are preferably a sulfur atom or cr1r2, More preferably, it is cr1r2: wherein R1 and R2 are each independently represented by a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom. The heterocyclic group bonded with a carbon atom may, for example, be exemplified. (pyrrole), furan, thiophene, imidaz〇le, oxazole, thiaz〇le Pyrazol, isoxazole, iso-plug. Isothiaz〇le "bite, pyridazine, pyrimidine, pyran, etc. Ri R2 is preferably an aliphatic group or an aromatic group. The aliphatic group is preferably an alkyl group, an alkenyl group or an alkynyl group, more preferably an alkyl group or an alkenyl group. The alkyl group may be a linear or branched alkyl group. More preferably, it is an alkyl group having a carbon number of 5 to 18 (for example, pentyl, hexyl, heptyl, octyl, decyl, decyl, eleven, decyl, octadecylcyclohexyl, 2_ Ethylhexyl or the like. Among the alkyl groups, a branched alkyl group is preferred, and is, for example, 2-ethylhexyl, 2-decylhexyl, 2-methylpentyl, 3,5, 5-tridecylhexyl , 2-cyclopentanylethyl, 2-cyclohexylethyl, etc. Since it has a carbon number of 5 to 18, it can inhibit the decomposition of pigments caused by water and nucleophiles, and can prevent water from approaching the adsorption point. The durability of the pigment is removed from the semiconductor fine particles, and the aggregation or excessive adsorption of the dyes can be suppressed. In 201210835, inefficient electron movement can be suppressed and In addition to the improvement of the photoelectric conversion efficiency, since the burning base is branched, the effect of improving the above-mentioned effects, particularly the long-term reliability, can be more remarkably obtained. (4) Silk is preferred as silk, naphthalene, and the like. The sub-bonded filament is an aliphatic group, An aromatic group or a ring group of the original t, and which may also be substituted. The heterocyclic group bonded by a carbon bond is, for example, a scale, a bite, a sputum, a sputum, a sputum, and a sputum. Seymour and 吼t are different. Sputum, σ than bite, β荅肼, σ close bite, fox murmur, etc. R and R are preferably an aliphatic group or an aromatic group, and the aromatic filaments preferably have a carbon number of 5 〜', more preferably 5 or 61, and the substituted aromatic group is preferably a phenyl group or a phenyl group. The sclerosing filament is preferably a silk, a county or a silk, more preferably an alkyl group or an alkenyl group, more preferably an alkyl group having a carbon number of 5 to 18 (for example, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, an anthracene group). Base, undecyl, dodecyl, octadecylcyclohexyl, 2-ethylhexyl, etc.). In the alkyl group, a branched alkyl group is preferred, which is, for example, 2-ethylhexyl, 2-methylhexyl, 2-decylpentyl, 3,5,5-tridecylhexyl, 2-cyclopentane. Ethyl, 2-cyclohexylethyl and the like. By having a carbon number of 5 to 18, it is possible to suppress the decomposition of the pigment by water and a nucleary phile, and to prevent the water from approaching the adsorption point and to prevent the dye from being peeled off from the semiconductor fine particles. reduce. Further, since aggregation or excessive adsorption of the pigments can be suppressed, inefficient electron movement can be suppressed and the photoelectric conversion efficiency can be improved. Further, since the alkyl group is branched, the effect of improving the durability particularly in the above effects can be more remarkably obtained. 1 2 卜 p, p is expressed as a pigment residue. The term "pigment residue" refers to a group of atoms necessary for forming a pigment compound as a whole, in addition to the structures other than P and P of the general formula (1). P1 and P2 are direct bonds or a bond of 201210835. JOZJHpif bond to form a pigment of the general formula (1). The pigment (pigment compound) formed by pi and P2 is, for example, Cyanine, melocyanine, rh〇dacyanine, 3 nucleus anthocyanins, allopolar, half flower Polymethine pigments such as hemicyanine, styryl, oxonol, cyanine, etc., containing acridine, dibenzopyran, sulfur Diarylmethine, triarylmethine, coumarin, indoaniline, indophenol, pyrazine (thioxanthene) Diazine), oxazine, thiazine, 0 pirazine and ° ratio (Diketopyrrolopyrrole), indigo, indigo, perylene, quinacridone ), naphthoquinone, bipyridyl, terpyridyl, tetrapyridyl, phenanthroline, and the like. Preferably, it is a cyanine, anthocyanin, anthocyanin, a trinuclear anthocyanin, an allopolar, a hemi-cyanine, a cinnamon, and the like. At this time, a substituent on the methine bond forming a dye in the cyanine is also included to form a dye of a squarylium ring and a croconium ring. The above-mentioned pigments are described in detail in F, Μ, Harmer, JOHN WILEY & SONS Publishing House, "Heterocyclic Compounds - Cyanine Dyes and Related Compounds" published in New York and London in 1964. The general formula of cyanine, merocyanine, and safflower anthocyanin is preferably represented by (XI), (XII), (XIII) of U.S. Patent No. 5,340,694. another
20 S 201210835 38254pif 外,較佳為以p1及p所形成的色素殘基的至少任—者的 一個次曱基鏈郄分具有方酸環與克酮酸環,更佳為兩個比 具有。 在有上述/般式(U的結構的色素中,P1及P2較佳分 別獨立為以下述一般式(2)或一般式(3)所表示。 刀 [化 15]Further, it is preferable that at least one of the pigment residues formed by p1 and p has a sulfhydryl ring and a ketone acid ring, more preferably two ratios. Among the pigments having the above-described structure (U), P1 and P2 are preferably independently represented by the following general formula (2) or general formula (3).
Z —般式(2) [化 16]Z General (2) [Chem. 16]
一般式(3) 上述-般式(2)、—般式⑶中,vl表示為氫原子或取 代基’ η表不為0〜4的整數,n為2以上時,v 成 不同’也可相互鍵結以形成j裒。n車交佳為〇〜3,更佳 〜2 〇 巧 Y表示為硫原子、服9或CRl〇R"。苴中 氫原子、脂肪族基、芳香族基或 鍵為 的雜環基,例如是 料“塞嗤“比唾、異射、異如、岭 21 201210835 呱喃等。R9的較佳示例為脂肪族基,而其較佳為烷基、烯 基或炔基,更佳為烷基或烯基。另外,更較佳為碳數5〜 18的烷基(例如是戊基、己基、庚基、辛基、壬基、癸基、 十一基、十二基、十八基、環己基、2_乙基己基等)。芳香 族基較佳為苯、萘、蒽等。 R11表示為氫原子、脂肪族基、芳香族基或以碳 原子鍵結的雜環基,Ri〇及Ru可相同或不同,也可相互鍵 結以形成環。以碳原子鍵結的雜環基,例如是吡咯、呋喃 、°塞吩、咪唾、。惡η坐、嗟π坐、α 啶、嗒肼、嘧啶、呱喃等。Rl〇 吡唑、異噁唑、異噻唑、吡 0及R11的較佳示例為脂肪族 土,而其較佳為烷基、烯基或炔基,更佳為烷基或烯基。 另外,更較佳為碳數5〜18的烷基(例如是戊基、己基、庚 基、辛基、壬基、癸基、卜基、十二基、十人基、環己 基、2-乙基己基等)。芳香族基較佳為苯、萘、蒽等。 Z表示為脂肪族基、料族基或以碳原子鍵結的雜環 基’且其亦可有取絲。取代基的較佳補為酸性基更 佳為有羧基(carboxyl group)的基團eR3〜 6 8 基。以碳原子鍵結的雜援篡,丨l a」-In the above general formula (3), in the general formula (3), vl represents a hydrogen atom or a substituent 'n represents an integer of 0 to 4, and when n is 2 or more, v is different'. Bonded to each other to form j裒. n car Jiaojia is 〇~3, better ~2 〇 Q Y is expressed as sulfur atom, service 9 or CRl〇R". A heterocyclic group in which a hydrogen atom, an aliphatic group, an aromatic group or a bond is a ruthenium, for example, a sputum "salvation", a saliva, a singularity, a singularity, a ridge 21 201210835, and the like. A preferred example of R9 is an aliphatic group, and it is preferably an alkyl group, an alkenyl group or an alkynyl group, more preferably an alkyl group or an alkenyl group. Further, it is more preferably an alkyl group having 5 to 18 carbon atoms (e.g., pentyl, hexyl, heptyl, octyl, decyl, decyl, eleven, decyl, octadecyl, cyclohexyl, 2 _Ethylhexyl, etc.). The aromatic group is preferably benzene, naphthalene, anthracene or the like. R11 is represented by a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom, and Ri and Ru may be the same or different and may be bonded to each other to form a ring. The heterocyclic group bonded to a carbon atom is, for example, pyrrole, furan, cel. Ηη sit, 嗟π sit, α pyridine, 嗒肼, pyrimidine, 呱 等 and so on. A preferred example of R1 吡 pyrazole, isoxazole, isothiazole, pyridine 0 and R11 is an aliphatic earth, and it is preferably an alkyl group, an alkenyl group or an alkynyl group, more preferably an alkyl group or an alkenyl group. Further, an alkyl group having a carbon number of 5 to 18 is more preferable (for example, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a decyl group, a dodecyl group, a decyl group, a cyclohexyl group, or a 2- Ethylhexyl, etc.). The aromatic group is preferably benzene, naphthalene, anthracene or the like. Z is represented by an aliphatic group, a group group or a heterocyclic group bonded by a carbon atom and may also have a wire. A preferred complement of the substituent is an acidic group, more preferably a group having a carboxyl group, eR3 to 6 8 . Heterogeneous aids bonded by carbon atoms, 丨l a"-
氣原子、脂肪族基、芳香族基或雜環基,且R其及亦=a gas atom, an aliphatic group, an aromatic group or a heterocyclic group, and R and
S 22 201210835 38254pif 基、2_乙土己基等)。R3〜R6及R8更較佳為氫原子。R7表 示為氧原子或鍵結的兩個取代基在哈梅特(Hammett)法則 中的取代常數(σρ)的和為正數的二價碳原子。 一般式(1)較佳為,R、R,、pl& Ρ2的至少一個具有 酸性基。所謂酸性基是指,具有解離性的質子(pr融)的 取代基,,如羧基(carb(3xyl gr〇up)、膦醯基(ph〇sph〇nyl group)、績酿基(suifonyl gr〇up)、硼酸基(b〇ric时记仰叩) 等’或有這絲的基目,較料紐基的基目。另外,酸 性基也可以是採用放出質子而解離的形式。 在一般式(1)中,W1表示為使電荷中和而需要相對離 子時的相對離子。通常,色素是否為陽離子、陰離子,或 是否帶有淨離子電荷,則是依據色素中的助色團 (auxochrome)及取代基。具有一般式⑴的結構的色素具有 解離性的取代基的情況下,可解離而具有負電荷。此^, 分子整體的電荷可藉由W1來中和。 w為陽離子時’例如是無機或有機的銨離子 (ammonium ion)(例如四烧敍離子(tetraalkylammonium ion)、吡啶離子(pyridiniumi〇n)),或鹼金屬離子。另外, W1為陰離子時’可以是無機陰離子或有機陰離子的任— 個。例如可列舉,函素陰離子(halogen ani〇n)(例如,氟化 物離子、氣化物離子、溴化物離子、碘化物離子)、經取代 芳基續酸離子(arylsulfonic acid ion)(例如,對曱笨確酸離 子(P'toluenesulfonic acid ion)、對氣苯續酸離子 (p-chl〇r〇benzenesulfonic acid ion))、芳基二績酸 23 201210835 38254pif (aryldisulfonic acid ion)(例如,1,3_ 苯二績酸離子 (1,3-benzenedisulfonic acid ion)、1,5-萘二續酸離子 (l,5-naphthalenedisulfonic acid ion)、2, 6-萘二續酸離 子)、烧基硫酸離子(alkyl sulfateion ion)(例如,曱基硫酸 離子)、硫酸離子(sulfate ion)、硫氰酸離子(thiocyanic acid ion)、過氣酸離子(perchloric acid ion)、四氟侧酸離子 (tetrafluoroboric acid ion)、苦味酸離子(picric acid ion)、 醋酸離子(acetic acid ion)、三氟曱烧績酸離子 (trifluoromethane sulfonic acid ion)等。而且,作為電荷均 衡相對離子可以用離子型聚合物(i〇nic polymer),或是具 有色素與逆電荷的其他色素,且也可以是用金屬錯離子(例 如,雙苯-l(bisbenzene-l)、2-二硫基镍(III)(2-dithiolato nickel(III)))。 在上述一般式(1)中,P1及P1較佳為分別獨立為以下 述一般式(4)或一般式(5)所表示,且據此可變成有高莫耳 吸光係數的色素。 [化 17]S 22 201210835 38254pif base, 2_ ethane hexyl group, etc.). R3 to R6 and R8 are more preferably a hydrogen atom. R7 represents a divalent carbon atom in which the sum of the substitution constants (σρ) of the two substituents of the oxygen atom or the bond is positive in Hammett's law. In general, the general formula (1) preferably has at least one of R, R, pl & Ρ2 having an acidic group. The acid group refers to a substituent having a dissociated proton (pr melt), such as a carboxyl group (carbo(3xyl gr〇up), a phosphinyl group (ph〇sph〇nyl group), and a suifonyl gr〇). Up), boric acid group (b〇ric, 叩 叩), etc. or have the silk base, which is more than the base of the New Zealand. In addition, the acidic group may also be in the form of dissociation by releasing protons. In (1), W1 represents a relative ion when a relative ion is required to neutralize the charge. Usually, whether the pigment is a cation, an anion, or a net ionic charge is based on an auxochrome in the pigment. And a substituent. When the dye having the structure of the general formula (1) has a dissociable substituent, it can be dissociated and has a negative charge. The charge of the entire molecule can be neutralized by W1. It is an inorganic or organic ammonium ion (for example, tetraalkylammonium ion, pyridiniumi〇n), or an alkali metal ion. In addition, when W1 is an anion, it may be an inorganic anion or an organic anion. Any For example, a halogen ani〇n (for example, fluoride ion, vapor ion, bromide ion, iodide ion), substituted arylsulfonic acid ion (for example, P'toluenesulfonic acid ion, p-chl〇r〇benzenesulfonic acid ion, aryl bis-acid acid 23 201210835 38254pif (aryldisulfonic acid ion) (for example, 1,3_ 1,3-benzenedisulfonic acid ion, 1,5-naphthalenedisulfonic acid ion, 2,6-naphthalene diacid acid ion, alkyl sulphate ion Alkyl sulfate ion (for example, sulfhydryl sulfate ion), sulfate ion, thiocyanic acid ion, perchloric acid ion, tetrafluoroboric acid ion , picric acid ion, acetic acid ion, trifluoromethane sulfonic acid ion, and the like. Moreover, as the charge equalization counter ion, an ionic polymer or other pigment having a pigment and a reverse charge may be used, and a metal counter ion (for example, bisbenzene-1) may also be used. , 2-dithiolato nickel (III)). In the above general formula (1), P1 and P1 are each independently represented by the following general formula (4) or general formula (5), and accordingly, a dye having a high molar absorptivity can be obtained. [Chem. 17]
24 S 1 -般式(4) 201210835 38254pif [化 18]24 S 1 - General (4) 201210835 38254pif [Chem. 18]
(V 〇(V 〇
2 Ο 一般式(5 ^^及丫為,與上述-般式⑵及—般式 的定義相同。 在上述一般式(4)或一般式(5)中,V表示為氮原 取代基,η表示為〇〜4的整數,η為2以上時,ν1可相间 或不同,也可相互鍵結以形成環。 Y表示為S、NR9或CRY。其中,以表示為氣原子、 脂肪族基、芳香族基或以碳原子鍵結的雜環基。汉1()汉" 表示為氫原子、祕絲、芳香縣如碳^鍵結的R1 環基,其可相同或不同,也可相互鍵結以形成環。” Z表示為麟族基、芳香錄或以韻子鍵結 基,且其亦可有取代基。 ”衣 私般式⑷或—般式⑸中’¥較佳表示為硫原 a =JiCH3)2,而2較佳表示為碳數5〜18的脂肪 3。。=族基為絲、稀基祕基,更佳為烧基或 I 土U 更較佳為石反數5〜18的燒基(例如是戊基、己2 Ο The general formula (5 ^^ and 丫 is the same as defined in the above general formula (2) and the general formula. In the above general formula (4) or general formula (5), V is represented by a nitrogen atom substituent, η It is expressed as an integer of 〇~4, and when η is 2 or more, ν1 may be phased or different, or may be bonded to each other to form a ring. Y is represented by S, NR9 or CRY, wherein it is represented by a gas atom, an aliphatic group, An aromatic group or a heterocyclic group bonded with a carbon atom. Han 1 () Han " expressed as a hydrogen atom, a secret wire, an aromatic county such as a carbon-bonded R1 ring group, which may be the same or different, or may be mutually Bonding to form a ring." Z is represented by a lanthanyl group, a fragrant group or a rhyme-bonding group, and may also have a substituent. "In the case of a private formula (4) or a general formula (5), '¥ is preferably expressed as Sulfurogen a = JiCH3)2, and 2 is preferably represented as fat 3 having a carbon number of 5-18. . = group base is silk, dilute base, more preferably burnt or I soil U is more preferably a stone of 5 to 18 (for example, pentyl,
基、庚基、辛基、壬基、恭萁 1_ ^ U pp其、9_甘 、土、十一基、十一基、十八基、 二土心/己基等)°藉由將2作為碳數5〜18的脂肪 可^取^ 面積的吸附量提高。另外,脂肪族基也 25 201210835 . r^ilt 在上述一般式(2)〜(5)中,v1較佳為有酸性基。所謂 酸性基是具有解離性的質子的取代基。νι只要具有酸性基 則可,也可以是通過連結基而鍵結有酸性基。酸性基並無 特別的限制,其例如叛基、膦酸基(phosphonic acid group)、磺基(sulfo group)、磺酸基(suif0nate group)、羥 基(hydroxyl radical)、羥肟酸基(hydr〇xamic gr〇up)、磷酸 基(phosphoryl group)、膦醯基、亞績酸基(sumn〇 gr〇up)、 亞磺醯基(sulfinyl group)、亞膦醯基(ph〇sphinyl gr〇up)、 亞磷酸基(phosphono group)、硫醇基(thi〇l group)與磺醯 基,及其的鹽。上述的鹽類並無特別的限制,其可為有機 鹽、無機鹽中的任一皆可。代表的例子’例如驗金屬離子(鐘 (Li) '鈉(Na)、鉀(K)等)、鹼土族金屬離子(鎮(Mg)、辦 (Ca)等)、銨(ammonium)、烷基銨(alkylamm〇nium)(例 如’二乙基鍵(diethylammonium)、四丁基銨 (tetrabutylammonium)等)、吡啶陽離子(pyridinium)、烷基 吡啶(alkylpyridinium)(例如,曱基吡0定 (methylpyridinium))、胍(guanidinium)、四烧鎸 (tetraalkylphosphonium)等鹽。在一般式(1)中,酸性基為 多數個時,分別可相同或是不同。 本發明之上述酸性基較佳為羧基、磷酸基或膦醯基, 更佳為竣基。 V1較佳為具有氫原子、5-羧基、5-磺酸基(5_sulf〇nic acid group)、5-曱基或 4, 5-苯環縮合(4,5_C()ndensed benzene-ring)。在此’位置號碼是以N+作為1逆時針旋轉而Base, heptyl, octyl, sulfhydryl, Christine 1_ ^ U pp, 9_gan, earth, eleven, eleven, eighteen, two earth/hexyl, etc.) by using 2 as The amount of carbon having a carbon number of 5 to 18 can be increased. Further, the aliphatic group is also 25 201210835 . r^ilt In the above general formulas (2) to (5), v1 is preferably an acidic group. The acidic group is a substituent having a dissociated proton. The νι may have an acidic group, or may have an acidic group bonded through a linking group. The acidic group is not particularly limited, and examples thereof include a thiol group, a phosphonic acid group, a sulfo group, a suif0nate group, a hydroxyl radical, and a hydroxamic acid group. Xamic gr〇up), phosphoryl group, phosphinium group, sumn〇gr〇up, sulfinyl group, ph〇sphinyl gr〇up , a phosphono group, a thi〇l group and a sulfonyl group, and salts thereof. The above salts are not particularly limited, and may be any of an organic salt and an inorganic salt. Representative examples include, for example, metal ions (Clock (Li) 'Sodium (Na), Potassium (K), etc.), Alkaline earth metal ions (Mg, Ca, etc.), Ammonium, Alkyl Ammonium (alkylamm〇nium) (eg, 'diethylammonium, tetrabutylammonium, etc.), pyridinium (pyridinium), alkylpyridinium (eg, methylpyridinium) ), guanidinium, tetraalkylphosphonium and other salts. In the general formula (1), when the number of acidic groups is plural, they may be the same or different. The above acidic group of the present invention is preferably a carboxyl group, a phosphoric acid group or a phosphonium group, more preferably a fluorenyl group. V1 preferably has a hydrogen atom, a 5-carboxyl group, a 5-sulfonic acid group, a 5-fluorenyl group or a 4,5-C()ndensed benzene-ring. Here, the position number is rotated counterclockwise with N+ as 1
S 26 201210835 註記。 據此,可獲得莫耳吸光係數提高或電子注入效率提高 的效果。 另外,在一般式(2)〜一般式(5)中,除了 V1之外,z 也較佳為具有酸性基的基團。Z為可設定為與V1相同的酸 性基。酸性基在本發明的色素中具有吸附半導體微粒子的 作用。色素中的酸性基的數量較佳為1個以上’更佳為j〜2 個。而且,將V1與Z兩者設定為酸性基,藉此可實現因吸 附力提高而耐久性提高。 可將上述一般式(2)以一般式(6)所表示,且將上述一 般式(3)以一般式(7)所表示。 [化 19]S 26 201210835 Note. According to this, an effect of improving the molar absorption coefficient or improving the electron injection efficiency can be obtained. Further, in the general formula (2) to the general formula (5), in addition to V1, z is preferably a group having an acidic group. Z is an acid group which can be set to be the same as V1. The acidic group has an action of adsorbing semiconductor fine particles in the dye of the present invention. The number of acidic groups in the dye is preferably one or more and more preferably from j to 2. Further, by setting both of V1 and Z to an acidic group, durability can be improved by an increase in the adhesion force. The above general formula (2) can be represented by the general formula (6), and the above general formula (3) can be represented by the general formula (7). [Chem. 19]
[化 20][Chem. 20]
EU〜E13 。其中, 上述一般式(6)或一般式(7)中 中的至少一個表示為拉電子基, 酸性基可列舉與在上述炉 表示為酸性基, ’ P為2以上的整數 所列舉的酸性基相同的 27 201210835 J»ZD4pif 酸性基。 拉電子基較佳為氰基(cyano group)、硝基(nitro group)、續醯基(sulfonyl group)、亞硬基(sulfoxi group)、 酿基(30丫1§1>0叩)、院氧幾基(311<;0\>^1*1)01^1§1*0叩)、胺曱 醯基(carbamoyl group) ’更佳為氰基、硝基、磺醯基,更 較佳為氰基。 上述一般式(6)中,p為2以上的整數,p較佳為2〜5, 更佳為2〜3。上述一般式⑻以及一般式⑺中,由於v!2 酸性基’ #〜的至少—個表示為拉電子基, 導體粒子層的吸附點附近EU~E13. In addition, at least one of the above general formula (6) or general formula (7) is represented by an electron withdrawing group, and examples of the acidic group include an acidic group which is represented by an integer of 2 or more in the furnace. The same 27 201210835 J»ZD4pif acidic base. The electron withdrawing group is preferably a cyano group, a nitro group, a sulfonyl group, a sulfoxi group, a brewing group (30丫1§1>0叩), a hospital Oxygen group (311 <;0\>^1*1) 01^1§1*0叩), carbamoyl group 'better than cyano, nitro, sulfonyl, more Good for cyano. In the above general formula (6), p is an integer of 2 or more, and p is preferably 2 to 5, more preferably 2 to 3. In the above general formula (8) and general formula (7), at least one of the v!2 acidic groups '#~ is represented as an electron-withdrawing group, and the vicinity of the adsorption point of the conductor particle layer
El3中,更佳為E it 而實現光電轉換效率“的::輸^可有效率的被進行, 、E12是拉電子基。 E ‘ 上述一般式(2)較佳為以—如 式(3)較佳為以-般式⑼所表示^式⑻所表示,上述-般 [化 21]In El3, it is better to achieve the photoelectric conversion efficiency for E it: ": The input can be efficiently performed, and E12 is the electron-based basis. E ' The above general formula (2) is preferably - (3) Preferably, it is represented by the formula (8) represented by the general formula (9), and the above-mentioned [21]
S 28 201210835 38254pif [化 22] RX-(L)mS 28 201210835 38254pif [Chem. 22] RX-(L)m
一般式(9) [化 23]General formula (9) [Chem. 23]
Rb 式ARb type A
NIC γ^/NIC γ^/
COOH 式Ε 、上述—般式(8)或一般式(9)中,Y、Z、R3〜R8與一般 式(2)或一般式(3)的Y、Z、R3〜R8定義相同》L·為以上述 式A〜D所表示’ m表示為〇、或1以上的整數,m為2以上時 ,L各自亦可不同。上述式Λ中,xa表示為NRe、〇、s, Re,示為氫原子或取代基。在上述式A及式C中,Ra〜Rd 表示取代基。在Ra〜Re中作為取代基可列舉以下述取代基 所表示取代基作為具體例。 乍為取代基,例如表示為脂肪族基、芳香族基或以碳 ^子鍵結_環基,且其亦可被取代。以碳原子鍵結的雜 環基,例如是吼咯、咬喃 '嗟吩、味唑、噪唑、嗟唑、叱 坐,、心坐、異嗟嗤、σ比咬、塔肼、〇密咬、〇瓜喃等。r、r, 較佳為脂職基或料族基,料族基的韻、 〜16 ’更佳為5或卜無取代的芳香族基較佳為苯基、关基 專。脂肪族基較佳為烧基、烯基或炔基,更佳為絲或稀 29 201210835 J»ZD4pif 基’更較佳為碳數5〜18的烷基(例如是戊基、己基、庚基 、辛基、壬基、癸基、十一基、十二基、十八基、環己1 、2_乙基己基等)。在烷基中,較佳為分支烷基,其例如是 2-乙基己基、2-曱基己基、2-曱基戊基、3, 5, 5一三曱基己 基、2-環戊烧乙基、2-環己基乙基等。因具有碳數5二18 的院基’可抑制水、親核劑(nucleophile)所造成的色素的 分解’並可抑制水接近吸附點而使色素從半導體微粒子剝 離所造成的耐久性的降低。而且,由於能夠抑制色素彼此 間的聚集或過度吸附,而可抑制非效率的電子移動,且使 光電轉換效率提高。另外,由於烷基為分支,因而可更顯 著地獲得在上述效果中特別是耐久性提高的效果。 上述一般式(8)中,p表示為2以上的整數,Rx表示為 酸性基。其中,酸性基可列舉與上述〜所列舉的酸性基相 同的酸性基。Rx較佳為式E所表示的基團。 由於上述一般式(2)以一般式(8)所表示,上述一般式 (3)以一般式(9)所表示,因而可獲得吸收區域擴大或吸光 係數提高的效果,且可產生光電轉換效率提高的效果。 在上述一般式(3)、一般式(5)及一般式(9)中,尺了較 佳為式(10)〜式(13)的任一者所表示。 [化 24] NC^C〇〇Rf 一般式(11) wCOORf 一般式(10)COOH Formula 、, in the above general formula (8) or in the general formula (9), Y, Z, R3 to R8 are the same as defined in the general formula (2) or the general formula (3), Y, Z, R3 to R8. In the case where 'm is represented by the above formulas A to D, it is represented by 〇 or an integer of 1 or more, and when m is 2 or more, L may be different. In the above formula, xa is represented by NRe, 〇, s, Re, and is represented by a hydrogen atom or a substituent. In the above formula A and formula C, Ra to Rd represent a substituent. The substituent represented by the following substituent is exemplified as a specific example in the case of Ra to Re. The hydrazine is a substituent, and is represented, for example, as an aliphatic group, an aromatic group, or a carbon-bond-bonded ring group, and it may be substituted. a heterocyclic group bonded by a carbon atom, for example, a sputum, a snail, a sputum, a oxazole, a oxazole, a carbazole, a squat, a heart, a scorpion, a sigma, a scorpion, a scorpion Biting, licking melon and so on. r, r, preferably a lipid group or a group group, the rhyme of the group group, more preferably ~16 ′ or 5 or unsubstituted aromatic group is preferably a phenyl group or a phenyl group. The aliphatic group is preferably an alkyl group, an alkenyl group or an alkynyl group, more preferably a silk or a dilute 29 201210835 J»ZD4pif group 'more preferably an alkyl group having a carbon number of 5 to 18 (for example, a pentyl group, a hexyl group, a heptyl group) , octyl, fluorenyl, fluorenyl, undecyl, dodecyl, octadecyl, cyclohexyl 1, 2-ethylhexyl, etc.). In the alkyl group, a branched alkyl group is preferred, which is, for example, 2-ethylhexyl, 2-decylhexyl, 2-decylpentyl, 3,5,5-tridecylhexyl, 2-cyclopentane. Ethyl, 2-cyclohexylethyl and the like. The hospital base having a carbon number of 5:18 can suppress the decomposition of the pigment by water and a nucleophile, and can suppress the decrease in durability of the pigment from the semiconductor fine particles when the water approaches the adsorption point. Further, since aggregation or excessive adsorption of the dyes can be suppressed, inefficient electron movement can be suppressed and the photoelectric conversion efficiency can be improved. Further, since the alkyl group is branched, the effect of improving the durability particularly in the above effects can be more remarkably obtained. In the above general formula (8), p represents an integer of 2 or more, and Rx represents an acidic group. Among them, the acidic group may be the same acidic group as the above-exemplified acidic groups. Rx is preferably a group represented by formula E. Since the above general formula (2) is represented by the general formula (8), the above general formula (3) is represented by the general formula (9), so that an effect of an absorption region enlargement or an increase in an absorption coefficient can be obtained, and photoelectric conversion efficiency can be produced. Improve the effect. In the above general formula (3), general formula (5), and general formula (9), the ruler is preferably expressed by any one of formulas (10) to (13). [Chem. 24] NC^C〇〇Rf General formula (11) wCOORf General formula (10)
XX
RfOOC 八COORf 一般式(12) NC 又CN —般式(13)RfOOC Eight COORf General (12) NC and CN General (13)
S 30 201210835 38254pif 上述式中,Rf為氫原子或取代基。取代基例如可列舉 脂肪族基、芳香族基、以碳原子鍵結的雜環基,且該些取 代基亦可被取代。其中,取代基較佳為脂肪族基、芳香族 基。藉此,可使短波長侧的吸收被強化。 在上述一般式(3)、一般式(5)及一般式(9)中,r7較 佳為以式(14)或式(15)所表示。 [化 25]S 30 201210835 38254pif In the above formula, Rf is a hydrogen atom or a substituent. The substituent may, for example, be an aliphatic group, an aromatic group or a heterocyclic group bonded with a carbon atom, and these substituents may be substituted. Among them, the substituent is preferably an aliphatic group or an aromatic group. Thereby, the absorption on the short wavelength side can be enhanced. In the above general formula (3), general formula (5) and general formula (9), r7 is preferably represented by formula (14) or formula (15). [Chem. 25]
藉此,可獲得電子注入效率提高的效果。 瓜式(1)所表示之本發明的色素,在四氫咬喃:乙醇 -1:1的溶液中,其極大吸收波長較佳為67〇 nm〜ll〇〇 nm 的範圍,更佳為7〇〇11111〜9〇〇11111的範圍。 以下表示為本發明中一般式(丨)所表示的化合物的較 佳具體例,然本發明並不限定於此。 31 201210835“ [化 26]Thereby, the effect of improving the electron injection efficiency can be obtained. The dye of the present invention represented by the melon formula (1) has a maximum absorption wavelength of preferably from 67 〇 nm to 11 〇〇 nm in a solution of tetrahydroethylene: ethanol-1:1, more preferably 7 〇〇11111~9〇〇11111 range. The following is a preferred embodiment of the compound represented by the general formula (丨) in the present invention, but the present invention is not limited thereto. 31 201210835" [Chem. 26]
VV
i CH =CH CHi CH =CH CH
=CH CH ΧΓ=CH CH ΧΓ
ZZ
V 化合物 X Y z R V2 V3 W1 s-l s s CbHh C5H11 H H I* S-2 s s C10H21 C10H21 5-COOH 5-COOH 1- S-3 C(CH3)2 C(CH3)2 C18II37 C18H37 古-COOH 5-COOH Γ S-4 C(CH3)2 C(CH3>2 CH2CH2COOH CsHn H 5-COOH ci· S.5 0 C(CH3)2 C10H21 C2H5 H 4,5-benzo ΓV Compound XY z R V2 V3 W1 sl ss CbHh C5H11 HHI* S-2 ss C10H21 C10H21 5-COOH 5-COOH 1- S-3 C(CH3)2 C(CH3)2 C18II37 C18H37 Ancient-COOH 5-COOH Γ S-4 C(CH3)2 C(CH3>2 CH2CH2COOH CsHn H 5-COOH ci· S.5 0 C(CH3)2 C10H21 C2H5 H 4,5-benzo Γ
化合物 X Y z1 Z2 R V2 V3 S-6 s C(CH3)2 CsHit CsHn CsHit H H S-7 s C(CHa)2 CHa CHs C10H21 4,5*benzo 5-C00H S-8 C(CH3)2 s CsHn CaHn CaHs H 5-COOH S-9 C(CbHii)2 C(C5Hu)2 CHa CsHn CHa 4,5*benzo 5-COOH s-io C(CHs)a NCHs CHa CeHis 0βΗΐ3 5-CHa 5-COOH 7 2 匕Compound XY z1 Z2 R V2 V3 S-6 s C(CH3)2 CsHit CsHn CsHit HH S-7 s C(CHa)2 CHa CHs C10H21 4,5*benzo 5-C00H S-8 C(CH3)2 s CsHn CaHn CaHs H 5-COOH S-9 C(CbHii)2 C(C5Hu)2 CHa CsHn CHa 4,5*benzo 5-COOH s-io C(CHs)a NCHs CHa CeHis 0βΗΐ3 5-CHa 5-COOH 7 2 dagger
VV
CH 之 CH VN.RXYN.R CH>十CH CHN.RXYN.R CH>
2 3 s 201210835 38254pif [化 28] v 之1 o R Ο 之22 3 s 201210835 38254pif [化 28] v of 1 o R Ο of 2
化合物 X Y Z1 Z2 R V2 V3 S.11 S C(CH3)j C3H7 CsHt C10H21 H H S-12 S C(CH3)2 C2H5 C2H5 C10H21 H 5-SO3H S-13 C(CH3)3 c(ch3)2 CsHl7 CsHe CaHs H 5-C00H S-14 c(ch3)2 c(ch3)3 Cl〇H21 CH3 C10H21 4,5*benzo 5-COOH S-15 C(CH3)2 C(CH3)2 Cl〇H21 CsHn CioHai 4,5-benzo 5COOH S-16 C(C5Hu)2 C(C5Hh)2 Cl〇H21 C10H21 C10H21 4,5-benzo 5-COOH S17 C(CH3>2 NCsHn CeHn CHs C2H6 5-CH3 5-COOHCompound XY Z1 Z2 R V2 V3 S.11 SC(CH3)j C3H7 CsHt C10H21 HH S-12 SC(CH3)2 C2H5 C2H5 C10H21 H 5-SO3H S-13 C(CH3)3 c(ch3)2 CsHl7 CsHe CaHs H 5-C00H S-14 c(ch3)2 c(ch3)3 Cl〇H21 CH3 C10H21 4,5*benzo 5-COOH S-15 C(CH3)2 C(CH3)2 Cl〇H21 CsHn CioHai 4, 5-benzo 5COOH S-16 C(C5Hu)2 C(C5Hh)2 Cl〇H21 C10H21 C10H21 4,5-benzo 5-COOH S17 C(CH3>2 NCsHn CeHn CHs C2H6 5-CH3 5-COOH
[化 29][化29]
另外,以下表示為本發明中之具有一般式(6)--般 式(9)的結構的色素的較佳具體例,然本發明並不限定於此 33Further, the following is a preferred specific example of the dye having the structure of the general formula (6)-formula (9) in the present invention, but the present invention is not limited thereto.
色 素 基本架? 虜 A 部 分 B 部 分 C 部 分 R3 〜R5、 R6 ' R8 R, Y z V1Z T-1 A-1 B-3 C-2 全為Me — s Z-3 COOH T-2 A-6 B-1 C-3 全為Η 0 s Z-l COOH T-3 A-7 B-2 C-1 全為Η NC^COOH C(CH3)2 Z-3 COOH T-4 A-8 B-5 C-1 全為Η NC^COOH C(CH3)2 Z-4 H 色 素 基本架構 Α部 分 B部 分 C部 分 R6 R8 R7 Y Z Vw L m Rx E丨丨 E12 E13 T-5 A-2 B-3 C-1 全 為 Ht 〇 C(CH3)2 Z-2 COOH H CN H T-6 A-2 B-3 C-3 全 為 Et 〇 C(CH3)2 Z-4 COOH Τ-7 A-2 B-3 C_4 全 為 Et 0 C(CH3)2 Z-2 — L-12 1 COO H Τ-8 A-2 B-3 C-4 全 為 Ht 0 C(CH3)2 Z-2 — L-3 1 COO H Τ-9 A-2 B-6 C-4 全 為 Ht 0 C(CH3)2 Z-5 — L-2 2 COO H Τ-1 A-2 B-3 C-3 全 為 Et NC^OOH C(CH3)2 Z-3 — 201210835 38254pif [化 30] (具體例1) [化 31] (具體例2)Pigment basic frame? 虏A Part B Part C Part R3 ~R5, R6 ' R8 R, Y z V1Z T-1 A-1 B-3 C-2 All Me - s Z-3 COOH T-2 A-6 B-1 C-3 All Η 0 s Zl COOH T-3 A-7 B-2 C-1 All Η NC^COOH C(CH3)2 Z-3 COOH T-4 A-8 B-5 C -1 All Η NC^COOH C(CH3)2 Z-4 H Pigment basic structure Α Part B Part C R6 R8 R7 YZ Vw L m Rx E丨丨E12 E13 T-5 A-2 B-3 C- 1 All Ht 〇C(CH3)2 Z-2 COOH H CN H T-6 A-2 B-3 C-3 All Et 〇C(CH3)2 Z-4 COOH Τ-7 A-2 B- 3 C_4 All are Et 0 C(CH3)2 Z-2 — L-12 1 COO H Τ-8 A-2 B-3 C-4 All Ht 0 C(CH3)2 Z-2 — L-3 1 COO H Τ-9 A-2 B-6 C-4 All Ht 0 C(CH3)2 Z-5 — L-2 2 COO H Τ-1 A-2 B-3 C-3 All Et NC^ OOH C(CH3)2 Z-3 — 201210835 38254pif [Specific Example 1] [Chemical Example 31] (Specific example 2)
S 201210835 38254pif [化 32] (具體例3)S 201210835 38254pif [Chem. 32] (Specific example 3)
色素 基本架構 A部 分 B部 分 C部 分 R6 R8 R7 Υ z V12 L m Rx E" E12 E13 T-11 A-3 B-3 C-1 全 為 Η 0 c(ch3)2 Z-2 COOH F H H T-12 A-3 B-3 C-I 全 為 Η 0 C(CH3)2 Z-2 COOH H F H T-13 A-3 B-3 C-1 全 為 Η 0 C(CH3)2 Z-2 so3h F F H T-14 A-3 B-3 C-1 全 為 Η 0 C(C5Hm)2 Z-2 po3h H CN H T-15 A-3 B-3 C-3 全 為 Η 0 C(CH3)2 Z-2 COOH T-16 A-3 B-3 C-3 全 為 Η 0 C(C5Hu)( ch3) Z-2 COOH T-17 A-3 B-3 C-3 全 為 Η 0 C(CH3)2 Z-4 COOH T-18 A-3 B-3 C-3 全 為 Η ΝΟ,^ΟΟΗ C(CH3)2 Me H T-19 A-3 B-3 C-4 全 為 Η 0 C(CH3)2 Z-2 L-2 2 COO H T-20 A-3 B-3 C-4 全 為 Η 0 C(CH3)2 Z-2 L-3 3 COO H T-21 A-3 B-3 C-4 全 為 Η 0 C(CH3)2 Z-2 L-l 1 COO H T-22 A-3 B-4 C-I 全 為 Η 0 C(CH3)2 Z-2 COOH F H H 35 201210835 38254pifBasic structure of pigment Part A Part B Part C R6 R8 R7 Υ z V12 L m Rx E" E12 E13 T-11 A-3 B-3 C-1 All Η 0 c(ch3)2 Z-2 COOH FHH T- 12 A-3 B-3 CI All Η 0 C(CH3)2 Z-2 COOH HFH T-13 A-3 B-3 C-1 All Η 0 C(CH3)2 Z-2 so3h FFH T- 14 A-3 B-3 C-1 All Η 0 C(C5Hm)2 Z-2 po3h H CN H T-15 A-3 B-3 C-3 All Η 0 C(CH3)2 Z-2 COOH T-16 A-3 B-3 C-3 All Η 0 C(C5Hu)( ch3) Z-2 COOH T-17 A-3 B-3 C-3 All Η 0 C(CH3)2 Z -4 COOH T-18 A-3 B-3 C-3 All Η ΝΟ, ^ΟΟΗ C(CH3)2 Me H T-19 A-3 B-3 C-4 All Η 0 C(CH3)2 Z-2 L-2 2 COO H T-20 A-3 B-3 C-4 All Η 0 C(CH3)2 Z-2 L-3 3 COO H T-21 A-3 B-3 C- 4 All Η 0 C(CH3)2 Z-2 Ll 1 COO H T-22 A-3 B-4 CI All Η 0 C(CH3)2 Z-2 COOH FHH 35 201210835 38254pif
Τ-23 Α-3 Β·4 C-1 全 為 Η 〇 c(ch3)2 Z-2 COOH H F F T-24 Α-3 Β-4 C-3 全 為 Η 0 c(ch3)2 Z-2 COOH Τ-25 Α-3 Β-4 C-3 全 為 Η 0 C(C5Hu)( ch3) Z-2 COOH Τ-26 Α-3 Β-4 C-3 全 為 Η 0 c(ch3)2 Z-4 COOH Τ-27 Α-3 Β-4 C-3 全 為 Η NC^COOH c(ch3)2 Me H Τ-28 Α-3 Β-4 C-4 全 為 Η Ο c(ch3)2 Z-2 L-2 2 COO H Τ-29 Α-3 Β-4 C-4 全 為 Η 0 c(ch3)2 Z-2 L-3 3 COO H Τ-30 Α-3 Β-4 C-4 全 為 Η 0 C(CH3)2 Z-2 L-l 1 COO H Τ-31 Α-3 Β-6 C-3 全 為 Η 0 C(CH3)2 Z-4 COOH 36 201210835 38254pif [化 33] (具體例4) 色素 基本架構 A部 分 B部 分 C部 分 R6 、R8 R' Y z V·2 L m Rx E11 En E13 T-32 A-4 B-2 C-l 全 為 Me 0 C(CH3)2 Z-5 COOH H CN Η T-33 A-4 B-5 C-3 全 為 Me 〇 C(CH3)2 Z-3 COOH T-34 A-4 B-4 C-3 全 為 Me 〇 C(CH3)2 Z-2 COOH T-35 A-5 B-8 C-3 全 為Η 0 C(CH3)2 Z-2 so3h 一 — — — — — T-36 A-6 B-7 C-3 全 為Η 〇 C(CH3)2 Z-l COOH — 一 — — 一 — T-37 A-7 B-4 C-4 全 為Η NC^COOCsH” C(CH3)2 Z-2 一 L-2 1 COOH — — — T-38 A-8 B-4 C-3 全 為Η NC^COOH C(CH3)2 Z-2 H — — — 一 — — T-39 A-9 B-9 C-3 全 為Η ο C(CH3)2 Z-4 COOH — — — — 一 — T-40 A-9 B-9 C-l 全 為Η ο C(CH3)2 ch3 COOH — — — H Η F T-41 A-9 B-l 0 C-3 全 為Η NCs^COOWIe C(CH3)2 ch3 COOH — — — — — — T-42 A-9 B-l 0 C-3 全 為Η NC^CN C(CH3)2 Cl〇 h2, COOH — — — — — 一 T-43 Α·1 0 B-l 0 C-3 全 為Η CiHtiOOC^COOCjHn C(CH3)2 CH, COOH 一 — — 一 — 一 T-44 Α-1 1 B-l 0 C-3 全 為Η NC^COOCsH,, C(CH3)2 ch3 COOH — — — — 一 — T-45 A-9 B-l C-3 全 為Η WteOOC^CN C(CH3)2 ch3 COOH — — — — — 一 T-46 A-9 B-9 C-3 全 為Η o c(ch3)2 Z-4 COOH — — — 一 — 一 T-47 A-9 B-9 C-l 全 為Η o C(CH3)2 Z-4 COOH — — 一 Η CO OH Η T-48 A-9 B-9 C-l 全 o c(ch3)2 Z-4 COOH - — - COO Η Η 37 201210835 38254pifΤ-23 Α-3 Β·4 C-1 All Η 〇c(ch3)2 Z-2 COOH HFF T-24 Α-3 Β-4 C-3 All Η 0 c(ch3)2 Z-2 COOH Τ-25 Α-3 Β-4 C-3 All Η 0 C(C5Hu)( ch3) Z-2 COOH Τ-26 Α-3 Β-4 C-3 All Η 0 c(ch3)2 Z -4 COOH Τ-27 Α-3 Β-4 C-3 All Η NC^COOH c(ch3)2 Me H Τ-28 Α-3 Β-4 C-4 All Η Ο c(ch3)2 Z -2 L-2 2 COO H Τ-29 Α-3 Β-4 C-4 All Η 0 c(ch3)2 Z-2 L-3 3 COO H Τ-30 Α-3 Β-4 C-4 All Η 0 C(CH3)2 Z-2 Ll 1 COO H Τ-31 Α-3 Β-6 C-3 All Η 0 C(CH3)2 Z-4 COOH 36 201210835 38254pif [化33] Example 4) Basic structure of pigment Part A Part B Part C R6, R8 R' Y z V·2 L m Rx E11 En E13 T-32 A-4 B-2 Cl All Me 0 C(CH3)2 Z-5 COOH H CN Η T-33 A-4 B-5 C-3 All Me 〇C(CH3)2 Z-3 COOH T-34 A-4 B-4 C-3 All Me 〇C(CH3)2 Z-2 COOH T-35 A-5 B-8 C-3 All Η 0 C(CH3)2 Z-2 so3h One — — — — — T-36 A-6 B-7 C-3 All Η 〇C(CH3)2 Zl COOH — one — — one — T-37 A-7 B-4 C-4 All Η NC^COOCsH" C(CH3)2 Z-2 - L-2 1 COOH — — — T-38 A-8 B-4 C-3 All Η NC^COOH C(CH3)2 Z-2 H — — — 一 — — T-39 A-9 B-9 C-3 All Η ο C(CH3)2 Z-4 COOH — — — — 一 — T-40 A-9 B-9 Cl All ο ο C(CH3)2 ch3 COOH — — — H Η F T-41 A-9 Bl 0 C-3 All Η NCs^COOWIe C(CH3)2 ch3 COOH — — — — — — T-42 A- 9 Bl 0 C-3 All Η NC^CN C(CH3)2 Cl〇h2, COOH — — — — — One T-43 Α·1 0 Bl 0 C-3 All Η CiHtiOOC^COOCjHn C(CH3) 2 CH, COOH One - one - one T-44 Α-1 1 Bl 0 C-3 All Η NC^COOCsH,, C(CH3)2 ch3 COOH — — — — One — T-45 A-9 Bl C-3 All Η WteOOC^CN C(CH3)2 ch3 COOH — — — — — One T-46 A-9 B-9 C-3 All Η oc(ch3)2 Z-4 COOH — — — One — A T-47 A-9 B-9 Cl is all Η o C(CH3)2 Z-4 COOH — — one Η CO OH Η T-48 A-9 B-9 Cl all oc(ch3)2 Z- 4 COOH - — - COO Η Η 37 201210835 38254pif
在~^述具_中,基本架構A表示為下述的Α·1〜A_12中 的,者’基本架構B表示為下述的b—b u中的任In the description of _, the basic structure A is expressed as Α·1 to A_12 described below, and the basic structure B is expressed as any of b-b u described below.
矣^架構c表示為下述的C1〜c种的任一者。另外,Z 由二為下述的Z_1〜Z_5,連結基L表示為下述的L-1〜l_12 τ的任一者。 *在具體例1〜4中,基本架構A與基本架構B在*彼此的 叙原子碳-碳雙鍵鍵結,基本架構B與基本架構c在* *彼此間的碳原子利用碳_碳雙鍵鍵結。The structure c is expressed as any of the following C1 to c types. Further, Z is represented by the following Z_1 to Z_5, and the linking group L is represented by any of L-1 to l_12 τ described below. * In the specific examples 1 to 4, the basic structure A and the basic structure B are in the carbon atom-carbon double bond bonding of each other, and the basic structure B and the basic structure c are in the carbon atoms of each other using carbon-carbon double Key bond.
38 S 201210835 38254pif [化 34]38 S 201210835 38254pif [Chem. 34]
39 201210835 38254pif [化 35]39 201210835 38254pif [化35]
A-10A-10
A-12 s 201210835 38254pif [化 36]A-12 s 201210835 38254pif [化36]
[化 37][化37]
ο Β-1 B- 41 201210835 [化 38]ο Β-1 B- 41 201210835 [Chem. 38]
C-3 C-4C-3 C-4
Z-1 Z-2Z-1 Z-2
L-12 例如,上述具體例中,可以表示為如以下的T-2、T-6、T-9、 T-10、T-12、T-16、T-17、T-18、T-24、T-30、T-37、T-40L-12, for example, in the above specific examples, it can be expressed as T-2, T-6, T-9, T-10, T-12, T-16, T-17, T-18, T- as below. 24, T-30, T-37, T-40
S 42 201210835 38254pif 〜T-50的結構式。 [化 39]S 42 201210835 38254pif ~ T-50 structural formula. [化39]
Τ-10 43 201210835 38254pif [化 40]Τ-10 43 201210835 38254pif [化 40]
44 s 201210835 [化 41]44 s 201210835 [化41]
Τ-37 45 201210835 38254pif [化 42]Τ-37 45 201210835 38254pif [化42]
[化 43][化43]
46 s 201210835 x-ir [化 44]46 s 201210835 x-ir [化 44]
另外,也可列舉以下的色素。 47 201210835 38254pif [化 45]Moreover, the following pigments are also mentioned. 47 201210835 38254pif [化45]
具有上述結構的色素的合成,可參考Ukrainskii Khimicheskii Zhurnal 第 40 卷 3 號 253 〜258 頁、Dyes and Pigments第21卷227〜234頁以及其中所引用的文獻的記 載等來進行。 (B)導電性支撐體 如圖1所示,本發明的光電轉換元件是,在導電性支 撐體1上形成有色素21吸附於多孔質的半導體微粒子22之 感光體層2。如後述,例如是在導電性支樓體塗佈·乾燥半 導體微粒子的分散液之後’藉由浸潰於本發明的色素溶液 中,即可製造出感光體。 導電性支撐體可以使用如金屬般本身有導電性的支 撐體,或表面具有導電膜層的玻璃或高分子材料。導電性 支撐體較佳為實質上是透明的。實質上是透明的意思是指 ,光的透過率為10%以上,較佳為5〇%以上,更佳為以上 。另外,可使用在玻璃或高分子材料上塗設導電性的金屬The synthesis of the dye having the above structure can be carried out by referring to Ukrainskii Khimicheskii Zhurnal, Vol. 40, No. 3, pp. 253 to 258, Dyes and Pigments, Vol. 21, pp. 227 to 234, and the contents of the documents cited therein. (B) Conductive support member As shown in Fig. 1, in the photoelectric conversion element of the present invention, the photoconductor layer 2 in which the dye 21 is adsorbed to the porous semiconductor fine particles 22 is formed on the conductive support 1 . As described later, for example, after the dispersion of the semiconductor fine particles is applied and dried in the conductive branch body, the photoreceptor can be produced by being immersed in the dye solution of the present invention. As the conductive support, a support which is electrically conductive like a metal or a glass or a polymer material having a conductive film layer on its surface can be used. The electrically conductive support is preferably substantially transparent. The fact that it is substantially transparent means that the transmittance of light is 10% or more, preferably 5% or more, more preferably more. In addition, it is possible to use a conductive metal coated on a glass or polymer material.
S 48 201210835 . 氧化物作為導電性支撐體。此時的導電性的金屬氧化物的 塗佈量,較佳為每1 m2的玻璃或高分子材料的支撐體0.1 〜100 g。在使用透明導電性支撐體時,光較佳為由支撐體 側入射。所使用的高分子材料的一例,較佳可列舉四醋酸 纖維素(tetraacetylcellulose,TAC)、聚對苯二曱酸乙二酉旨 (polyethylene terephthalate,PET)、聚對荼二曱酸乙二酯 (Polyethylene Naphthalate ’ PEN)、對位聚苯乙烯 (syndiotactic polystyrene,SPS)、聚苯硫趟(polyphenylene sulfide ’ PPS)、聚碳酸醋(polycarbonate,PC)、聚芳醋 (polyarylate ’ PAR)、聚石風(polysulfone,PSF)、聚醚石風 (polyether sulfone,PES)、聚醚醯亞胺(polyetherimide,PEI) 、%狀聚稀煙(cyclic polyolefin)、漠化苯氧基(brominated phenoxy)等。 在本發明中’較佳的導電性支撐體為使用金屬支撐體 。導電性金屬支撐體也可使用以屬於4族〜13族中任一元素 構成的導電性金屬支撐體,以作為導電性支撐體。在此,4 紅〜13族是指長週期型週期表中的元素。 本發明的導電性金屬支樓體的厚度,較佳為10 上、2000 μιη以下’更佳為1〇 以上、looo 以下,更 較佳為50 μηι以上、500 μιη以下。若導電性金屬基板的厚 度太厚則可撓性不足,因此使用作為光電轉換元件時則會 發生故障。另外,若厚度太薄,則光電轉換元件在使用中 會產生破損因而不佳。 本發明中所使用的導電性金屬支撐體的表面電阻較 49 201210835 38254pif 佳為低表面電阻。較佳的表面電阻的範圍為1〇临2以下, 更佳,1 Ω/m以下’更較佳為〇 i Ω/ηι2以下。表面電阻的 值太问Β寺’會變的不易通電而無法發揮光電轉換元件的 能。 導電性金屬支樓體較佳為使用選自由鈦、紹、銅、鎮 、鐵、不銹鋼、鋅、鉬、钽、鈮及鍅所組成之群組的至少1 種。上述這些金屬也可以是合金。其中,較佳為鈦、鋁、 銅、鎳、鐵、不銹鋼及鋅,更佳為鈦、鋁及銅,進而佳為 鈦及鋁。使用鋁時,較佳為使用鋁合金展伸材料、1〇〇〇系 〜7000系(輕金屬協會:鋁手冊,輕金屬協會(1978) 26)等 〇 因導電性金屬支撐體的表面電阻小,使光電化學電池 的内部電阻被降低,而能獲得高輸出的電池。另外,在使 用導電性金屬支撐體的情況下,即使使塗佈有後述的半導 體微粒子分散液的導電性金屬支撐體進行加熱乾燥的溫度 提高而進行烘烤(baking),支撐體也不會軟化。因此,藉 由適當選擇加熱條件,可形成比表面積大的多孔質半導體 微粒子層。根據上述,可使色素吸附量增加,且可提供在 高輸出下轉換效率高的光電轉換元件。 另外,一邊連續地送出被捲繞的金屬片,一邊在金屬 片上塗上半導體微粒子分散液’然後進行加熱,即可得到 多孔質的導電性支撐體。之後,連續塗佈本發明的色素, 可在導電性支撐體上形成感光層。經由上述製程,則可使 廉價製造出光電轉換元件或光電化學電池成為可能。S 48 201210835 . Oxide as a conductive support. The coating amount of the conductive metal oxide at this time is preferably 0.1 to 100 g per 1 m 2 of the glass or polymer support. When a transparent conductive support is used, light is preferably incident from the support side. An example of the polymer material to be used is preferably tetraacetyl cellulose (TAC), polyethylene terephthalate (PET) or polyethylene terephthalate (polyethylene terephthalate). Polyethylene Naphthalate ' PEN), syndiotactic polystyrene (SPS), polyphenylene sulfide ' PPS, polycarbonate, PC, polyarylate ' PAR , polygypsy (polysulfone, PSF), polyether sulfone (PES), polyetherimide (PEI), cyclic polyolefin, brominated phenoxy, and the like. In the present invention, a preferred conductive support is a metal support. As the conductive metal support, a conductive metal support composed of any one of Group 4 to Group 13 can be used as the conductive support. Here, the 4 red to 13 group refers to an element in the long period type periodic table. The thickness of the conductive metal branch body of the present invention is preferably 10 or more and 2000 μm or less, more preferably 1 Torr or more, or less, more preferably 50 μm or more and 500 μm or less. If the thickness of the conductive metal substrate is too thick, the flexibility is insufficient, so that failure occurs when used as a photoelectric conversion element. Further, if the thickness is too thin, the photoelectric conversion element may be damaged during use and thus is not preferable. The surface resistance of the conductive metal support used in the present invention is preferably lower than that of 49 201210835 38254pif. The surface resistance is preferably in the range of 1 to 2 or less, more preferably 1 Ω/m or less, and more preferably 〇 i Ω / ηι 2 or less. The value of the surface resistance is too large for the temple to change, and it is difficult to apply electricity to the photoelectric conversion element. The conductive metal branch body preferably uses at least one selected from the group consisting of titanium, samarium, copper, ferrous, iron, stainless steel, zinc, molybdenum, niobium, tantalum and niobium. These metals may also be alloys. Among them, titanium, aluminum, copper, nickel, iron, stainless steel and zinc are preferred, and titanium, aluminum and copper are more preferred, and titanium and aluminum are preferred. When aluminum is used, it is preferable to use an aluminum alloy stretch material, a lanthanide-7000 series (Light Metal Association: Aluminum Handbook, Light Metal Association (1978) 26), etc., because the surface resistance of the conductive metal support is small, so that The internal resistance of the photoelectrochemical cell is lowered, and a high output battery can be obtained. In addition, when the conductive metal support is used, the support is not softened even if the conductive metal support to which the semiconductor fine particle dispersion described later is applied is heated and dried to be baked. . Therefore, by appropriately selecting the heating conditions, a porous semiconductor microparticle layer having a large specific surface area can be formed. According to the above, the amount of dye adsorption can be increased, and a photoelectric conversion element having high conversion efficiency at a high output can be provided. Further, while continuously feeding the wound metal piece, the semiconductor fine particle dispersion liquid is applied onto the metal piece and then heated to obtain a porous conductive support. Thereafter, the dye of the present invention is continuously applied to form a photosensitive layer on the conductive support. Through the above process, it is possible to inexpensively manufacture a photoelectric conversion element or a photoelectrochemical cell.
S 50 201210835 38254pif 本發明的導電性金屬支撐體,較佳為使用在高分子材 ;斗層上設置導電層的基板。高分子材料層並無特別的限制 、’但要選擇在導體層上塗佈半導賴粒子分散液後加熱時 進订溶融科會保持形狀的材料。導電層為在高分子材料 層上,以先前的方法’例如彻擠壓塗布等進行積層而製 造0 月匕使用的尚分子材料層例如為,四醋酸纖維素(tac) 、聚對苯二f酸乙二g旨(PET)、聚對荼二甲酸乙二醋(聰) 、,,聚苯乙烯(SPS)、聚苯硫醚(PPS)、聚碳酸酯(pc) 、聚芳醋(PAR)、聚石風(PSF)、聚,風(PES)、聚_亞胺 (PEI)、環狀聚烯烴、溴化苯氧基等。 藉由在高分子材料層上設置導電層,以作為本發明的 導電性金屬支撐體來使用,此高分子材料層可作為光電轉 換元件或光電化學電池的保護層而發揮功能。若使用電絕 緣性的材料作為高分子材料,則此高分子材料層不只可作 為保護層,也可作為絕緣層而發揮功能。根據上述,可確 保光電轉換元件本身的絕緣性。當此高分子材料層在作為 絕緣層使用的情況下’較佳為使用體電阻率是1〇10〜1〇22 Ω cm者更佳為體電阻率是1011〜1〇19 q. cm。使用上述 材料時,若不特別地混合導電性的材料,則可得到具有上 述範圍内的體電阻率的絕緣層的導電性金屬支撐體。導電 性金屬支撐體較佳為實質上是透明的。實質上是透明的意 思疋心’ 400 nm〜1200 nm的光的透過率為1〇%以上,較佳 為50%以上,更佳為8〇%以上。 201210835 外pif 在導電性金屬支撐體上,也可於表面上施以光管理功 能,例如可設置以高折射膜及低折射率的氧化物膜交叉積 層的反射防止膜’或光導(lightguide)功能。 在導電性支撐體上,較佳為擁有遮斷紫外光的功能。 例如可列舉,在上述高分子材料層的内部或表面,存在有 可把紫外光轉變成可見光的螢光材料的方法。另外,其他 較佳的方法’例如可列舉使用紫外線吸收劑的方法。在導 電性支撐體上,也可以給予日本專利特開平丨丨_250 944號公 報等中記載的功能。 若電池面積變大則導電膜的電阻值變大,因此也可配 置集電電極。較佳集電電極的形狀及材質可使用日本專利 特開平11-266028號公報等中記載者。另外,在高分子材料 層與導電層之間,也可配置氣體阻隔膜(gas barrier film) 及/或離子擴散防止膜。氣體阻隔膜為樹脂膜或無機膜任一 者皆可。 (C)半導體微粒子 如圖1所示’本發明的光電轉換元件是,在導電性支 撐體1上形成有色素21吸附於多孔質的半導體微粒子22之 感光體層2。如後述’例如是在上述的導電性支撐體塗佈、 乾燥半導體微粒子的分散液之後,藉由浸潰於本發明的色 素溶液中,即可製造出感光體。 半導體微粒子較佳為,使用金屬的硫族化物 (chalcogenide)(例如,氧化物、硫化物、硒化物(seienide) 等)或弼欽礦(perovskites)的微粒子。金屬的硫族化物較佳S 50 201210835 38254pif The conductive metal support of the present invention is preferably a substrate provided with a conductive layer on a polymer material or a layer. The polymer material layer is not particularly limited, but the material which retains the shape when the semi-conductive liquid dispersion is applied to the conductor layer and heated. The conductive layer is a layer of a molecular material used for forming a layer on a polymer material layer by a conventional method such as extrusion coating, for example, tetraacetic acid cellulose (tac) or polyparaphenylene f. Acid Ethylene (PET), polyethylene terephthalate (Cong), polystyrene (SPS), polyphenylene sulfide (PPS), polycarbonate (pc), polyaryl vinegar (PAR) ), polyphenolite (PSF), poly, wind (PES), poly-imine (PEI), cyclic polyolefin, brominated phenoxy, and the like. The conductive material layer is provided on the polymer material layer to be used as the conductive metal support of the present invention, and the polymer material layer functions as a protective layer of the photoelectric conversion element or the photoelectrochemical cell. When an electrically insulating material is used as the polymer material, the polymer material layer can function not only as a protective layer but also as an insulating layer. According to the above, the insulation of the photoelectric conversion element itself can be ensured. When the polymer material layer is used as an insulating layer, it is preferable that the bulk resistivity is 1 〇 10 〜 1 〇 22 Ω cm, and the bulk resistivity is 1011 〜 1 〇 19 q. cm. When the above materials are used, if a conductive material is not particularly mixed, a conductive metal support having an insulating layer having a volume resistivity within the above range can be obtained. The electrically conductive metal support is preferably substantially transparent. The transmittance of the light of 400 nm to 1200 nm is substantially 1% or more, preferably 50% or more, more preferably 8 % by weight or more. 201210835 The outer pif can also be provided with a light management function on the surface of the conductive metal support. For example, an antireflection film or a lightguide function can be provided with a high refractive film and a low refractive index oxide film interleaved. It is preferable to have a function of blocking ultraviolet light on the conductive support. For example, there is a method in which a fluorescent material capable of converting ultraviolet light into visible light is present inside or on the surface of the polymer material layer. Further, other preferred methods are exemplified by a method using an ultraviolet absorber. The function described in Japanese Laid-Open Patent Publication No. Hei-250-944, and the like can also be applied to the conductive support. When the battery area becomes large, the resistance value of the conductive film becomes large, so that the collector electrode can also be disposed. The shape and material of the current collector electrode are preferably those described in Japanese Laid-Open Patent Publication No. Hei 11-266028. Further, a gas barrier film and/or an ion diffusion preventing film may be disposed between the polymer material layer and the conductive layer. The gas barrier film may be either a resin film or an inorganic film. (C) Semiconductor fine particles As shown in Fig. 1, the photoelectric conversion element of the present invention has the photoconductor layer 2 in which the dye 21 is adsorbed to the porous semiconductor fine particles 22 on the conductive support 1 . For example, after the above-described conductive support is applied and dried, the dispersion of the semiconductor fine particles is dried, and then the photoreceptor can be produced by being immersed in the coloring matter solution of the present invention. The semiconductor fine particles are preferably fine particles of a metal chalcogenide (e.g., oxide, sulfide, seienide, etc.) or perovskites. Metal chalcogenide is preferred
S 52 201210835 38254pif 為鈦、錫(tin)、鋅、鎢(tungsten)、鍅、給(hafnium)、銷 (strontium)、銦(indium)、筛(cerium)、紀(yttrium)、鑭 (lanthanum)、釩(vanadium)、鈮或鈕的氧化物、硫化鶴 (cadmium sulfide)、硒化鎘(cadmium selenide)等。妈鈦鑛 較佳為鈦酸鉛(strontium titanate)、鈦酸約(caicium titanate)等。其中,更佳為氧化鈦、氧化鋅、氧化錫、氧化 鶴0 半導體t關於傳導存在有載體為電子的22型以及載體 為電洞的P型,但是在本發明的元件中使用〇型就轉換效率 觀點而較佳。在η型半導體中,除了沒有雜質位階的傳導帶 電子與價電子帶電洞的載體的濃度為相等的本質半導體 (intrinsic semiconductor)(或本徵半導體)外,因來自雜質 的結構缺陷,會存在著電子載體濃度高的11型半導體。本發 明中較佳使用的η型無機半導體為丁1〇2、TiSr〇3、Zn〇、S 52 201210835 38254pif is titanium, tin, zinc, tungsten, tantalum, hafnium, strontium, indium, cerium, yttrium, lanthanum , vanadium (vanadium), yttrium or button oxide, cadmium sulfide, cadmium selenide. The mother titanium ore is preferably strontium titanate or caicium titanate. More preferably, it is a titanium oxide, a zinc oxide, a tin oxide, a oxidized crane, a semiconductor t, a type 22 in which a carrier is an electron, and a P type in which a carrier is a hole, but the conversion is performed using the 〇 type in the element of the present invention. The efficiency is better. In an n-type semiconductor, in addition to an intrinsic semiconductor (or intrinsic semiconductor) having a concentration of a conduction band electron having no impurity level and a carrier of a valence electron charged hole, a structural defect due to impurities may exist. An 11-type semiconductor having a high electron carrier concentration. The n-type inorganic semiconductor preferably used in the present invention is D1, TiSr〇3, Zn〇,
Nb203、Sn02、W03、Si、CdS、CdSe、V2〇5、ZnS、ZnSe 、SnSe、KTa03、FeS2、PbS、InP、GaAs、CuInS2、CuInSe2 等。其中,最較佳的n型半導體為Ti〇2、ZnO、Sn02、W03 及NbA3。另外,也可較佳使用使該些半導體的多數個複 合而成的半導體材料。 ^導體微粒子的粒徑,以保有半導體微粒子分散液的 黏度高之目的,較佳為一次粒子的平均粒徑為2 nm以上、 50 nm以下。另外’一次粒子的平均粒徑是2 nm以上、30 nm 以下的超微粒子為更佳。也可混合粒徑分佈不同的2種類以 上的微粒子,此時小粒子的平均尺寸較佳為5nm以下。此 53 201210835 38254pif 外,以使入射光散射以使光捕獲率提高為目的可對上述 的超微粒子添加低含率之平均粒徑超過5〇 nm的大粒子。 此時’大粒子的含率較佳為平均粒侧⑽町的粒子的 質量的5_下,更佳為施以下。因上述目的而添加混合 的大粒子的平均粒徑,較佳為⑽⑽以上更 〇腿 以上。 半導體微粒子的製作方法較佳為,以作花済夫的「溶 膠凝膠法的科學」AGNE承風出版社⑽8年)等中記載的 /谷膠·凝膠法(s〇l_gelmeth〇d)法。而且,較佳為藉由將 ^egUSSa公司開發的氯化物於氫氧鹽(oxyhydrogen salt)中 ,溫加水分解,以製作氧化物的方法。當半導體微粒子是 氧化鈦時,較佳為用上述溶膠•凝膠法、凝膠•溶膠法、 氣化物的氫氧鹽中的高溫加水分解法中的任一者,更佳為 用清野学的「氧化鈦物性及應用技術」技報堂出版(1997 年)中s己載的硫酸法及氣法。另外,溶膠凝膠法較佳為,c 、J、Barbe等人在 J0urnai 0f American Ceramic Society 第 80 卷第12號3157〜3171頁中記載的方法,或s、D、Burnside 等人在Chemistry of Materials第 10卷第 9號2419〜2425頁中 記載的方法。 此外’半導體微粒子的製造方法’例如作為氧化鈦奈 米粒子的製造方法較佳可列舉:利用四氣化鈦的火焰加水 分解的方法、四氣化鈦的燃燒法、安定的硫族化物錯合物 的加水分解、正鈦酸(orthotitanic acid)的加水分解、由可 溶部分與不溶部分形成半導體微粒子後溶解去除可溶部分Nb203, Sn02, W03, Si, CdS, CdSe, V2〇5, ZnS, ZnSe, SnSe, KTa03, FeS2, PbS, InP, GaAs, CuInS2, CuInSe2, and the like. Among them, the most preferable n-type semiconductors are Ti〇2, ZnO, Sn02, W03 and NbA3. Further, a semiconductor material obtained by laminating a plurality of these semiconductors can be preferably used. The particle diameter of the conductor fine particles is preferably such that the average particle diameter of the primary particles is 2 nm or more and 50 nm or less for the purpose of maintaining high viscosity of the semiconductor fine particle dispersion. Further, the ultrafine particles having an average particle diameter of primary particles of 2 nm or more and 30 nm or less are more preferable. It is also possible to mix two or more kinds of fine particles having different particle diameter distributions, and in this case, the average size of the small particles is preferably 5 nm or less. In addition to the purpose of scattering incident light to increase the light trapping rate, a large particle having a low content ratio of an average particle diameter of more than 5 Å may be added to the above ultrafine particles. In this case, the content of the large particles is preferably 5 Å under the mass of the particles of the average granule side (10), and more preferably the following. The average particle diameter of the large particles to be mixed for the above purpose is preferably (10) (10) or more and more than the legs. The method for producing the semiconductor fine particles is preferably a gluten-gel method (s〇l_gelmeth〇d) method described in "The Science of Sol-Gel Method" by AGNE Chengfeng Press (10) 8 years). . Further, a method of producing an oxide by subjecting a chloride developed by the company of the company to an oxyhydrogen salt and hydrolyzing it by water is preferred. When the semiconductor fine particles are titanium oxide, it is preferably one of the above-mentioned sol-gel method, gel/sol method, and high-temperature hydrolysis method in the oxyhydroxide of the vapor, and more preferably "Titanium Dioxide Properties and Application Technology" published in the Technical Report Hall (1997), the sulfuric acid method and the gas method. Further, the sol-gel method is preferably a method described by c, J, Barbe et al. in J0urnai 0f American Ceramic Society, Vol. 80, No. 12, pp. 3157~3171, or s, D, Burnside et al., in Chemistry of Materials. The method described in Vol. 10, No. 9 on pages 2419 to 2425. Further, the method for producing a semiconductor fine particle is preferably, for example, a method for producing titanium oxide nanoparticles, a method of decomposing a flame by four-titanium titanium, a method of burning titanium tetra-titanium, and a stable chalcogenide. Hydrolysis of matter, hydrolysis of orthotropic acid, formation of semiconductor microparticles from soluble and insoluble fractions, dissolution and removal of soluble fractions
54 S 201210835 38254pif 的方法、過氧化物水溶液的水熱合成,或利用溶膠•凝膠 法的核/殼(core/shell)結構的氧化鈦的製造方法 氧化鈦的結晶結構例如是銳鈦礦型(anatase)、板鈦礦 型(brookite)或金紅礦型(印⑴^,而較佳為銳鈦礦型、板 鈦礦型。 另外,在氧化鈦微粒子中也可以混合氧化鈦奈米管· 奈米線•奈米柱。 氧化鈦亦可藉由非金屬元素等而被摻雜(doping),而 除了作為氧化鈦的添加劑的摻質(d〇pant)外,為了改善頸 化(necking)的黏合與防止逆電子移動,可在表面使用添加 劑。添加劑較佳為’例如銦錫氧化物(Indimn Tin 〇xide, ITO)、氧化錫(Sn〇)粒子、鬚晶、纖維狀石墨•碳奈米管 (graphite · carbon nanotubes)、氧化鋅頸鍵結、織維素 (cellulose)等的纖維狀物質、金屬、有機矽(〇rgan〇silic〇n) 、十一烧基苯績酸(dodecyl benzene sulfonic acid)、石夕烧化 合物(silane)等的電荷移動結合分子,以及電位傾斜型樹枝 狀聚合物(dendrimer)等。 以去除氧化欽上的表面缺陷等的目的,也可在色素吸 附前,對氧化鈦進行酸鹼或氧化還原處理。另外,亦可進 行银刻(etching)、氧化處理、過氧化氫處理、脫氫處理、 UV_臭氧、氧電漿等處理。 (D)半導體微粒子分散液 在本發明中,於上述的導電性支撐體上塗佈半導體微 粒子分散液,並藉由適當的進行加熱,即可得到多孔質半 55 201210835 38254pif 導體微粒子塗佈層。 半導體微粒子分舰的製作方法,除上述的溶膠•凝 膠法外,可列舉在合成半導體時於溶劑中析出微粒子而直 接使用的方法、對微粒子照射超音波等而粉碎成超微粒子 的方法,或使用石磨與研蛛等機械性的粉碎搗碎的方法等 。分散溶劑可使用水及/或各種有機溶劑。而有機溶劑,例 如曱醇(methanol)、乙醇(ethanol)、異丙醇(is〇pr〇pyl alcohol)、香茅醇(dtronelloi)、松香醇(terpine〇1)等醇類, 丙酮(acetone)等酮類’乙酸乙酯(ethyl acetate)等酯類,二 氣甲烷(dichloromethane)、乙腈(acetonitriie)等。 分散時,也可視需要使用少量的例如聚乙二醇 (polyethylene glycol)、羥乙基纖維素(hydr〇xyethyl cellulose)、羧曱基纖維素(carb〇xymethyi ceuui〇se)的聚合 物、界面活性劑、酸或鉗合劑(chelating agent)等當作是分 散助劑。但是,在導電性支撐體上進行製膜製程之前,較 佳為以過濾法或使用分離膜的方法,或是遠心分離法等, 預先去除大部分的這些分散助劑。 若半導體微粒子分散液的黏度太高,則分散液會凝集 而無法製膜,相反地若半導體微粒子分散液的黏度太低, 則溶液會流掉而無法製膜。因此,分散液的黏度較佳為25 。(:時 ION、S/m2 〜300 N、S/m2,更佳為 25。(:時 50N、S/m2 〜200 N、S/m2。 半導體微粒子分散液的塗佈方法,可使用應用式的方 法之滚輪法0〇以1'11^11(^)、浸沾法((^11^11〇(1)等。另外54 S 201210835 Method of 38254pif, hydrothermal synthesis of aqueous peroxide solution, or production of titanium oxide having a core/shell structure by a sol-gel method. The crystal structure of titanium oxide is, for example, anatase type. (anatase), brookite type or rutile type (printed (1)^, preferably anatase type, brookite type. In addition, titanium oxide nanotubes may also be mixed in the titanium oxide fine particles. · Nano wire • Nano column. Titanium oxide can also be doped by non-metallic elements, etc., in addition to the dopant (d〇pant) as an additive for titanium oxide, in order to improve necking (necking) Adhesive and anti-electron movement can be used, additives can be used on the surface. The additive is preferably 'Indium, Tin Oxide (ITO), Tin Oxide (Sn〇) particles, whiskers, fibrous graphite, carbon Fibrous substances such as graphite carbon nanotubes, zinc oxide neck bonds, and cellulose, metal, organic 矽rgan〇silic〇n, eleven-based phthalic acid (dodecyl) Benzene sulfonic acid) A charge-shifting molecule such as silane), and a dendrimer such as a potential tilting type. For the purpose of removing surface defects such as oxidation, it is also possible to perform acid-base or redox on titanium oxide before the pigment is adsorbed. Further, processing such as etching, oxidation treatment, hydrogen peroxide treatment, dehydrogenation treatment, UV_ozone, oxygen plasma, etc. may be performed. (D) Semiconductor fine particle dispersion in the present invention, The semiconductor fine particle dispersion liquid is applied onto the conductive support, and by heating appropriately, a porous half 55 201210835 38254pif conductive fine particle coating layer can be obtained. The semiconductor fine particle separation ship can be manufactured by the above sol gel. In addition, a method of directly using fine particles in a solvent when synthesizing a semiconductor, a method of pulverizing ultrafine particles by irradiating ultrasonic waves or the like, or a method of mechanically pulverizing and crushing using a stone mill or a spider is used. Etc. The dispersing solvent may use water and/or various organic solvents, and organic solvents such as methanol, ethanol, Alcohols such as is〇pr〇pyl alcohol, dtronelloi, terpine alcohol (1), ketones such as acetone, ethyl acetate, etc. Dichloromethane, acetonitriie, etc. When dispersing, a small amount of, for example, polyethylene glycol, hydrethyl alcohol cellulose, carboxy fluorenyl cellulose (carb 〇) may be used as needed. The polymer, surfactant, acid or chelating agent of xymethyi ceuui〇se) is regarded as a dispersing aid. However, it is preferred to remove most of these dispersing aids in advance by a filtration method or a separation membrane method, or a telecentric separation method, before the film formation process is carried out on the electroconductive support. If the viscosity of the semiconductor fine particle dispersion is too high, the dispersion will aggregate and the film cannot be formed. Conversely, if the viscosity of the semiconductor fine particle dispersion is too low, the solution will flow out and the film cannot be formed. Therefore, the viscosity of the dispersion is preferably 25. (: ION, S/m2 to 300 N, S/m2, more preferably 25. (: 50N, S/m2 to 200 N, S/m2. Application method of semiconductor fine particle dispersion, application type) The method of the wheel method 0〇 is 1'11^11(^), dip-dip method ((^11^11〇(1), etc.
56 S 201210835 J82!>4pif ,也可使用調jh_式的方法之氣刀法(air knife meth〇d)、刮 刀法(blade method)等。此外,將應用式的方法與調整式的 方法使用於相同部分的方法較佳為日本專利特公昭 58-4589號公報中揭示的環棒法(wirebarmeth〇d)、美國專 利2681294號說明書等中記載的斜板加料法(sHde h〇pper method)、擠壓法(extrusi〇n meth〇d)、淋幕法(⑶代也 method)等。而且,較佳為使用一般機器以旋轉法(叩记 method)或喷霧法(spraying method)進行塗佈。濕式印刷方 法主要為凸版(relief printing)、平板(〇ffset)及雕刻 (gravure)的三大印刷法,而較佳為凹版(intagH〇 、橡膠板(池1^1)1攸)、網版印刷(似從11扣11如§)等。因 此可由上述方法中,根據液黏度與濕厚度以選擇較佳的製 膜方法。因為本發明的半導體微粒子分散液黏度高、具有 黏稠性’所以凝集力強,因而在塗佈時與支撐體會有不易 融合的情況。在上述情況中,可藉由以口乂臭氧處理進行表 面的清潔和親水化,以增加塗佈後之半導体微粒子分散液 與導7性支撐體表面的接著力,使半導体微粒子分散液的 半導體微粒子層整體的較佳厚度為〇.丨μιη〜1〇〇瓜 ’半導體微粒子層的厚度更佳為i μιη〜3〇μιη,更較佳$ μπι〜25 μιη。半導體微粒子的每一丨y支撐體的承量齡 佳為5 g〜400 g ’更佳為5 g〜1〇〇 g ^ 對於已塗佈半導體微粒子的層,為了半導體微粒 此的電子的接觸的強化,及與支撐體的附著性的提高,還 £; 57 201210835 38254pif 有為l乾燥已塗佈的半導體微好分散液,而施以加熱處 理。藉由上述的加熱處理,可形成多孔質半導體微粒^層 此外’除加熱處理之外,也可使用光的能源 , 使用氧化鈦作為半導體微粒子時,也可給予如紫外 導體微粒子吸㈣光峡表面活性化,且可时射 使半導體齡子表面雜化。對半導體微好_該 子可吸收㈣’藉此吸附於粒子表面的雜f可藉由粒子表 ^活性化而被分解,且為了上述目的而可奴成較佳狀 ^。在組合加熱處理與紫外光的情況下,較佳為對半導= 被粒子-邊騎錄子魏的光,—邊則峨^上、 =下進行加熱,更佳為以跡c以上、15Gt以下進行加 …。如上述’藉由絲發半導體絲子,以光分解 =微粒子層内的雜質的同時’可增強微粒子之間的物理 除J在上述的導電性支㈣上塗佈半導體微粒子分 t木並加熱或照射光以外’也可進行其他的處理。較佳 的方法,例如可列舉通電、化學的處理等。 日太也可杨壓力,杨壓力物㈣如可列舉 可列舉日ίίΓ3,857號公報等。光照射的示例,例如 如可列舉曰本專利特議2侧3號公報 號公H ,例如可列舉日本專利特開歷―35789656 S 201210835 J82!>4pif, you can also use the air knife method (air knife meth〇d), the blade method, etc.. Further, the method of using the application method and the adjustment method in the same portion is preferably described in the wire bar method disclosed in Japanese Patent Publication No. Sho 58-4589, the specification of U.S. Patent No. 2,681,294, and the like. The sHde h〇pper method, the extrusion method (extrusi〇n meth〇d), the curtain method ((3) and the method). Further, it is preferred to apply the coating by a spin method or a spraying method using a general machine. The wet printing method is mainly three printing methods of relief printing, stencil and gravure, and preferably gravure (intagH〇, rubber sheet (pool 1^1) 1攸), net Version printing (like from 11 deduction 11 such as §) and so on. Therefore, in the above method, a preferred film forming method can be selected depending on the liquid viscosity and the wet thickness. Since the semiconductor fine particle dispersion of the present invention has high viscosity and is viscous, it has a strong cohesive force, and thus it may not easily fuse with the support at the time of coating. In the above case, the surface is cleaned and hydrophilized by the oral ozone treatment to increase the adhesion force of the surface of the semiconductor fine particle dispersion after coating and the surface of the conductive support, so that the semiconductor fine particles of the semiconductor fine particle dispersion The thickness of the layer as a whole is preferably 〇. 丨μιη~1 〇〇 ' 'the thickness of the semiconductor fine particle layer is more preferably i μηη~3〇μιη, more preferably $μπι~25 μιη. The age of each 丨y support of the semiconductor fine particles is preferably 5 g to 400 g 'more preferably 5 g to 1 〇〇 g ^ for the layer of the coated semiconductor fine particles, for the contact of the electrons of the semiconductor fine particles Strengthening, and adhesion to the support, also increased; 57 201210835 38254pif has dried the coated semiconductor fine dispersion, and applied heat treatment. By the above-described heat treatment, the porous semiconductor fine particles can be formed. In addition to the heat treatment, an energy source of light can be used. When titanium oxide is used as the semiconductor fine particles, it is also possible to give a surface such as an ultraviolet conductor. It is activated and can be used to hybridize the surface of the semiconductor age. It is fine for the semiconductor - this can absorb (4)' whereby the impurity f adsorbed on the surface of the particle can be decomposed by activation of the particle table, and can be favored for the above purpose. In the case of combining heat treatment with ultraviolet light, it is preferable to heat the light of the semi-conductor = by the particle-side riding, and the heating is performed by the upper side, the lower side, and more preferably the trace c or more, 15 Gt. Add the following... As described above, by photo-decomposing the semiconductor filaments, the photo-decomposition = impurities in the micro-particle layer can enhance the physical division between the micro-particles. The semiconductor micro-particles are coated on the above-mentioned conductive branch (4) and heated or Other treatments can be performed other than irradiation. Preferred methods include, for example, energization, chemical treatment, and the like. Japanese may also be Yang pressure, and Yang pressure (4) may be listed as Japanese ίίΓ3,857. Examples of the light irradiation include, for example, Japanese Patent Application Laid-Open No. Hei No. 3, No. H, for example, Japanese Patent Publication No. 357896
S 58 201210835 38254pif 上述之在導電性支撐體上塗設半導體微粒子的方法, 除上述之在導電性支撐體上塗佈半導體微粒子分散液的方 法外’可使用在導電性支撑體上塗佈日本專利第2664194 號公報中記載的半導體微粒子的前驅物,藉由空氣中的水 分進行加水分解,以得到半導體微粒子膜的方法等方法。 上述的刖驅物例如,(NH4)2TiF6、過氧化鈦、金屬烧 氧化合物、金屬錯合物、金屬有機酸鹽等。 ^另外可列舉:用塗佈與金屬有機氧化物(烷氧化合物 等)共存的漿料(slurry)並以加熱處理、光處理等而形成半 導體膜的方法,及與無機系前驅物共存的漿料而漿料的 與分散的鈦粒子的特性為特定的方法。在這些漿料中亦可 少量地添加黏結劑(binder),黏結劑例如是纖維素、氟聚 合物、交聯橡膠(cross _ linked mbber)、聚鈦酸丁酯 (polybutyltitanate)、羧甲基纖維素等。 曰有,半導體微粒子或其前驅物層的形成的技術,例如 是以電暈放電(corona discharge)、電漿、UV等的物理的方 法進行親水化之方法、藉由驗或聚伸乙基二氧基嗟吩 (polyethylened10Xythiophene)與聚苯乙烯磺酸(p〇1购_ senate)等的化學處理、聚苯胺等的接合用中間膜的形成 等。 在導電性支樓體上塗設半導體微粒子的方法,也可與 上述的(1)赋法-起合併使肖⑵乾式法、⑶其他方法 (2)乾式法較佳可列舉日本專利制2__231943號公報等 。⑶其他方法錄可列舉日本專利制歷_13娜號公 59 201210835 38254pif 報等。 乾式法例如是蒸氣沈積或濺鍍、氣膠沈積法(aer〇s〇1 deposition method)等,另外也可用電泳法、電析法。 另外,亦可使用一旦在耐熱基板上製作塗膜後,轉印 至塑膠等膜上的方法。較佳為,如日本專利特開 2002-184475號公報記載的通過乙烯醋酸乙烯酯(Ethylene Vinyl Acetate ’ EVA)轉印的方法,或包括可以曰本專利特 開2003-98977號公報記載的紫外光、水系溶劑去除的無機 鹽的犧牲基盤上形成半導體層、導電層後,轉印至有機基 板上,然後去除犧牲基板的方法。 為了能吸附多的色素,半導體微粒子以表面積大者為 較佳。例如,在支撐體上塗設半導體微粒子的狀態下,其 表面積較佳為相對於投影面積的1 〇倍以上,更佳為丨〇〇倍以 上。然,上述之上限並沒有特別的限制,其通常是5〇〇〇倍 左右。較佳半導體微粒子的結構可列舉日本專利特開 2001-93591號公報等。 一般而言,雖然半導體微粒子的層的厚度越大,每一 ,位面積可承載色素的量會增加,因而光的吸收效率會變 间,但是已產生的電子的擴散距離會增加,因此電荷再結 合的損失也會變大。半導體微粒子層的較佳厚度可根據元 件的用途而不同’典型的是在〇丨μιη〜⑽μιη。另外,使 用以作為光電化學電池的情況下’半導體微粒子層的厚度 較佳為1 μιη〜50 μιη,更佳為3 μιη〜30 μηι。為了使半導體 微粒子在塗佈於支撐體後粒子彼此間密著,也可在丨⑽t 201210835 38254pif 二80〇 C的溫度下,加熱10分〜1〇小時。使用玻璃作為支 樓體時,製膜溫度較佳為400 〇C〜600。(:。 、—使用面分子材料作為支撐體時,較佳為在25〇〇c以下 進订製膜後加熱。上述情況下的製膜方法,可為⑴濕式法 (2)乾式法、(3)電泳法(含電析法)的任何一個,較佳為 (1)濕式法或(2)乾式法,更佳為(1)濕式法。 再者,半導體微粒子的每一 1 m2支撐體的塗佈量為〇. 5 g〜500 g,較佳為5 g〜1〇〇 g。 為了使色素吸附於半導體微粒子,較佳為將製膜後的 …體電極浸>責於以溶液與本發明的色素形成的色素吸附 2色素洛液中。色素韻用色素溶液巾所使用的溶液並無 去別的限制’其只要是可溶解本發明的光電轉換元件用色 可。例如,可使用乙醇、曱醇、異丙醇、甲苯、第三 :醇、乙腈、丙酮、正丁醇等的有機溶劑。其中,較佳為 用乙醇、甲苯。而且,有機溶劑可以單獨使用,也可以 夕數個來使用。為使色素均勻地韻到半導體微粒子 ,上述色素的濃度較佳為0. 01 mm〇ie/L〜1. 0 mmc)ie/L ’更佳為0· 1 mmole/L〜1. 〇 mm〇le/L。 以溶液與本發明的色素形成的色素韻用色素溶液 :視吊要可加熱至5〇c至1〇〇。〇。色素的吸附可在半導體 ί粒子的塗佈前進行,或塗佈後睛。另外,也可同時塗 4體微粒子與色素’而使色素吸附。未吸附的色素可 清洗去除。在進行塗佈膜祕料,較佳為在烘烤後 行色素的吸附,而更佳為在洪烤後,於塗佈膜表面吸附 201210835 38254pif 水之前快速地使色素被吸附。在不破壞本發明的宗旨的範 圍内,也可混合具有其他結構的色素。在混合色素時,為 了使全部的色素溶解’需要使用色素吸附用色素溶液。 色素的使用量較佳為全部之每一 1 m2支撐體是〇 〇1 mmole〜100 mmole,更佳為〇. 1 mm〇ie〜5〇 mmole,更較 佳為0.1 mmole〜1〇 mm〇ie。在這種情況下,本發明的色 素的使用量較佳為5 mole%以上。 另外,色素對半導體微粒子的吸附量,相對於半導體 微粒子1 g ’較佳為〇· 〇〇1 mmole〜1 mmole,更佳為〇 1 mmole〜0. 5 mmole。 根據如上述般的色素量,可充分得到半導體中的增感 效果。據此,若色素量少則增感效果變得不充分,色素量 太多時,未附著於半導體的色素會懸浮而成為增感效果降 低的原因 另外’以降低聚集等色素彼此間的相互作用為目的, 也可共吸附無色的化合物。共吸附的疏水性化合物,可列 舉具有緩基的類固醇化合物(例如,膽酸(ch〇iic acid)、三 曱基乙醯基酸(pivaloylacid))等。 在吸附色素之後’也可使用胺類(amine)來處理半導 體微粒子的表面。較佳的胺類為,例如4-第三丁基呲啶 (4-tert-butylpyridine)、聚乙烯基比咬(polyvinylpyridine)等 。上述的胺類可在液體的情況下直接使用,也可溶解在有 機溶劑中來使用。 對向電極可做為光電化學電池的正極而發揮作用。對S 58 201210835 38254pif The above method for coating semiconductor fine particles on a conductive support can be applied to a conductive support by applying a method of coating a semiconductor fine particle dispersion on a conductive support. The method of obtaining a semiconductor fine particle film by hydrolyzing water in the air by the precursor of the semiconductor fine particles described in the publication No. 2664194. The above-mentioned ruthenium precursor is, for example, (NH4)2TiF6, titanium peroxide, a metal oxide compound, a metal complex, a metal organic acid salt or the like. Further, a method of forming a semiconductor film by heat treatment, light treatment, or the like with a slurry which is coexisted with a metal organic oxide (alkoxy compound or the like), and a slurry which coexists with the inorganic precursor are used. The properties of the slurry and the dispersed titanium particles are a specific method. A binder may also be added in a small amount to these slurries, such as cellulose, fluoropolymer, cross-linked mbber, polybutyltitanate, carboxymethyl fiber. Prime. The technique for forming a semiconductor fine particle or a precursor layer thereof, for example, a method of hydrophilizing by a physical method such as corona discharge, plasma, or UV, by means of a test or polyethylation Chemical treatment such as polyethylened10Xythiophene and polystyrenesulfonic acid (p〇1), formation of an intermediate film for bonding of polyaniline or the like, and the like. The method of coating the semiconductor fine particles on the conductive branch body may be combined with the above-mentioned (1) method to make the Xiao (2) dry method, and (3) the other method (2) the dry method is preferably Japanese Patent No. 2__231943 Wait. (3) Other methods can be listed as Japanese patent calendar _13娜号59 201210835 38254pif newspaper. The dry method is, for example, vapor deposition or sputtering, aer〇s1 deposition method, or the like, and electrophoresis or electrolysis can also be used. Further, a method of transferring the film onto a heat-resistant substrate and transferring it to a film such as a plastic may be used. Preferably, the method of transferring by ethylene vinyl acetate (EVA) is described in JP-A-2002-184475, or the ultraviolet light described in Japanese Laid-Open Patent Publication No. 2003-98977 A method in which a semiconductor layer and a conductive layer are formed on a sacrificial substrate of an aqueous salt-removed inorganic salt, and then transferred onto an organic substrate, and then the sacrificial substrate is removed. In order to adsorb a large amount of pigment, it is preferred that the semiconductor fine particles have a large surface area. For example, in the state in which the semiconductor fine particles are coated on the support, the surface area thereof is preferably 1 〇 or more, more preferably 丨〇〇 or more, with respect to the projected area. However, the above upper limit is not particularly limited and is usually about 5 times. The structure of the preferred semiconductor fine particles is exemplified by Japanese Laid-Open Patent Publication No. 2001-93591. In general, although the thickness of the layer of the semiconductor fine particles is larger, the amount of the pigment which can be carried by the bit area is increased, and the light absorption efficiency is changed, but the diffusion distance of the generated electrons is increased, so the charge is re The loss of the combination will also increase. The preferred thickness of the semiconductor fine particle layer may vary depending on the use of the element 'typically at 〇丨μιη~(10)μιη. Further, in the case of being used as a photoelectrochemical cell, the thickness of the semiconductor fine particle layer is preferably from 1 μm to 50 μm, more preferably from 3 μm to 30 μm. In order to make the semiconductor microparticles adhere to each other after being applied to the support, it may be heated at a temperature of 〇1010t 201210835 38254pif 280 ° C for 10 minutes to 1 hour. When glass is used as the support body, the film forming temperature is preferably 400 〇C to 600. (: - When using a surface molecular material as a support, it is preferred to heat the film after 25 〇〇c or less. The film forming method in the above case may be (1) wet method (2) dry method, (3) Any one of electrophoresis (including electrolysis), preferably (1) wet method or (2) dry method, more preferably (1) wet method. Further, each of semiconductor fine particles The coating amount of the m2 support is 〇. 5 g to 500 g, preferably 5 g to 1 〇〇 g. In order to adsorb the dye to the semiconductor fine particles, it is preferred to dip the body electrode after the film formation. In the dye which is formed by the solution and the dye of the present invention, the solution is used in the dye solution. The solution used for the pigment dye solution is not particularly limited as long as it is a color which can dissolve the photoelectric conversion element of the present invention. For example, an organic solvent such as ethanol, decyl alcohol, isopropanol, toluene, third: alcohol, acetonitrile, acetone, n-butanol or the like can be used. Among them, ethanol and toluene are preferably used, and the organic solvent can be used alone. It can also be used in a few times. In order to make the pigment evenly spread to the semiconductor microparticles, the above pigment The concentration is preferably 0.01 mm〇ie / L~1. 0 mmc) ie / L 'is more preferably 0 · 1 mmole / L~1. Square mm〇le / L. The pigment dye solution formed by the solution and the pigment of the present invention can be heated to 5 〇c to 1 视 depending on the suspension. Hey. The adsorption of the pigment can be carried out before the coating of the semiconductor particles or after the coating. Alternatively, the particles may be simultaneously coated with the fine particles and the dye to adsorb the dye. Unadsorbed pigments can be removed by washing. In the coating film secret, it is preferred to adsorb the pigment after baking, and it is more preferable to rapidly adsorb the pigment before the 201210835 38254 pif water is adsorbed on the surface of the coating film after the baking. Pigments having other structures may also be mixed within the scope of not impairing the gist of the present invention. When the coloring matter is mixed, in order to dissolve all the pigments, it is necessary to use a dye solution for dye adsorption. Preferably, the amount of the dye used is from 1 mmole to 100 mmole, more preferably from 1 mm〇ie to 5〇mmole, more preferably from 0.1 mmole to 1〇mm〇ie. . In this case, the amount of the coloring matter of the present invention is preferably 5 mol% or more. In addition, the amount of the pigment to the semiconductor microparticles is preferably 〇1 e1 mmole~1 mmole, more preferably 〇1 mmole~0. 5 mmole. According to the amount of the dye as described above, the sensitizing effect in the semiconductor can be sufficiently obtained. According to this, when the amount of the pigment is small, the sensitizing effect is insufficient, and when the amount of the pigment is too large, the dye which is not attached to the semiconductor is suspended and the sensitizing effect is lowered. In addition, the interaction between the dyes such as aggregation is lowered. For the purpose, it is also possible to co-adsorb a colorless compound. The co-adsorbed hydrophobic compound may, for example, be a steroid compound having a slow group (e.g., ch〇iic acid, pivaloyl acid) or the like. An amine can also be used to treat the surface of the semiconducting microparticles after the pigment is adsorbed. Preferred amines are, for example, 4-tert-butylpyridine, polyvinylpyridine and the like. The above amines may be used as they are in the case of a liquid, or may be dissolved in an organic solvent. The counter electrode can function as a positive electrode of a photoelectrochemical cell. Correct
S 62 201210835 38254pif ^電極為與通常上述的導電性支撐體同義,但是若為可充 刀,保持強度的結構,則不一定需要支撐體。然而,具有 支T體者在密閉性的觀點上是有利的。對向電極的材料例 如疋鉑、碳、導電性聚合物,而較佳為鉑、碳、導電性聚 合物。 對極的構造較佳為集電效果高的構造,較佳的例子為 曰本專利特開平10-505192號公報等。 、-人文光電極也可使用氧化鈦與氧化錫(Ti〇2/Sn〇2)等的 複&電極,氧化鈦的混合電極可例舉日本專利特開 2000 113913號公報中所記載士氧化鈥以外的混合電極可 例舉,日本專㈣開觸卜185243號公報、日本專利特開 2003-282164號公報中所記載者。 為了要提向入射光的利用率等,受光電極可為串聯型 :而較佳的串聯型結構例,可列舉日本專利特開2〇〇2_9〇咖 號公報等中記載的例子。 亦可設置在受光電極層内部的有效率地進行光散射 :反射的光#理機能,較佳可聽日本專利制2_-93桃 號公報t所記載者。 在導電性支撐體與多孔質半導體微粒子層之間,為 防止因電解液與電極直接接觸的逆電流,較佳為形成短路 Z止層。較佳可解,日本專利制刊㈣聰號公 中所記盤去。 物二 63 201210835 38254pif 開2001-283941號公報中所記載者。 (E)電解質 代表性的氧化還原對例如碘與碘化物(例如,碘化鋰 、峨化四 丁基銨、峨化四丙錄(tetrapr0pyiammonium i〇(jide) 專)的組合,院基紫精(alkyl viologen)(例如,曱基紫精氯 (methyl viologen chloride)、已基紫精溴(hexyl vi〇1〇gen bromide)、> 基紫精四敗硼酸(benZyi vi〇l〇gen tetrafluoroborate))與其還原物的組合,多羥基苯 (polyhydroxy benzene)類(例如,對苯二酚(hydr〇quin〇ne) 、萘二酚(naphthhydroquinone)等)與其氧化物的組合,2 價與3價的鐵錯合物(例如,赤血鹽(re(jprUssiate)與黃血鹽 (yellowprussiate))的組合等。其中,以碘與碘化物的組合 為較佳。溶解上述氧化還原對的有機溶劑,較佳為非質子 性的極性溶劑(例如’乙腈、碳酸丙烯酯(propylene carbonate)、碳酸伸乙 g旨(ethylene carbonate)、二曱基曱醯 胺(dimethylformamide)、二曱亞砜(dimethyl sulfoxide)、 環丁砜(sulfolane)、1,3-二甲基咪嗤啉酮(l,3_dimethyl imidazolinone)、3-曱基0惡〇坐林酮(3-methyl oxazolidinone) 等)。在凝膠電解質的基質中使用的聚合物,例如聚丙烯腈 (polyacrylonitrile)、聚氟化亞乙烯(p〇lyVinylidene fluoride) 等。溶融鹽例如,藉由在碘化鋰與其他至少1種類的鋰鹽( 例如’醋酸裡(lithium acetate)、過氯酸鐘(lithium perchlorate)等)中混合聚環氧乙烧(polyethylene oxide),而 在室溫下具有流動性的溶融鹽。上述情況的聚合物的添加S 62 201210835 38254pif ^ The electrode is synonymous with the above-mentioned conductive support, but if it is a mold capable of retaining the strength, the support is not necessarily required. However, those having a T-body are advantageous from the viewpoint of airtightness. The material of the counter electrode is, for example, iridium platinum, carbon or a conductive polymer, and preferably platinum, carbon or a conductive polymer. The structure of the counter electrode is preferably a structure having a high current collecting effect, and a preferred example is Japanese Laid-Open Patent Publication No. Hei 10-505192. Further, a human <RTIgt; The mixed electrode other than the ruthenium is exemplified by Japanese Patent Publication No. 185243, and Japanese Patent Laid-Open No. 2003-282164. In order to improve the utilization of incident light, etc., the light-receiving electrode may be of a tandem type, and an example of a preferred tandem type structure is exemplified in Japanese Patent Laid-Open Publication No. Hei. It is also possible to efficiently perform light scattering inside the light-receiving electrode layer: the reflected light is a function of the light, and it is preferable to be described in Japanese Patent No. 2_-93 peach. It is preferable to form a short-circuited Z-stop layer between the conductive support and the porous semiconductor fine particle layer in order to prevent a reverse current which is directly contacted between the electrolytic solution and the electrode. It is better to be solved, and the Japanese patent publication (4) Cong No.物二 63 201210835 38254pif The one described in the publication No. 2001-283941. (E) Representative redox couples of electrolytes such as iodine and iodide (for example, lithium iodide, tetrabutylammonium tetrachloride, tetrapr0pyiammonium i〇 (jide), combination-based viologen (alkyl viologen) (eg, methyl viologen chloride, hexyl vi〇1〇gen bromide, > benzyi vi〇l〇gen tetrafluoroborate) a combination of polyhydroxybenzenes (eg, hydroquinone, naphthhydroquinone, etc.) with its oxides, both valence and trivalent An iron complex (for example, a combination of red (jprUssiate) and yellow blood salt (yellow prussiate), etc., wherein a combination of iodine and iodide is preferred. The organic solvent of the above redox couple is dissolved. A non-protic polar solvent (eg, 'acetonitrile, propylene carbonate, ethylene carbonate, dimethylformamide, dimethyl sulfoxide, Sulfolane ), 1,3-dimethylimidazolinone, 3-methyl oxazolidinone, etc.) a polymer used in a matrix of a gel electrolyte For example, polyacrylonitrile, p〇ly Vinylidene fluoride, etc. The molten salt is, for example, by lithium iodide and at least one other type of lithium salt (for example, 'lithium acetate, a polyperoxide in a lithium perchlorate or the like, and a molten salt having a fluidity at room temperature. Addition of the polymer in the above case
64 S 201210835 38254pif 量為1質量%〜50質量%。另外,在電解質中也可含有γ-丁内酯(ybutyrolactone),藉此可使埃化物離子的擴散效 率變高及轉換效率提高。 電解質_的添加物,除了上述的4-第三丁基呲啶之外 ’可加入胺σ比咬(aminopyridine)系化合物、聚苯并味坐 (benzimidazole)系化合物、胺三唑(aminotriazole)系化合物 及胺°塞α坐(aminothiazole )系化合物、ϋ米嗤系化合物、胺基 三嗪(amino triazine)系化合物、尿素衍生物(urea derivative)、醯胺(amide)化合物、嘧啶系化合物以及不含 氮的雜環。 另外’為了提高效率,也可採用控制電解液的水分的 方法。控制水分的較佳方法,可列舉控制濃度的方法,及 與脫水劑共存的方法。為了減輕填的毒性,可使用破與環 糊精(cyclodextrin)的晶籠化合物(dathrate compound),相 反地也可用經常補給水分的方法。此外,可使用環狀脒 (cyclic amidine) ’也可加入氧化防止劑、加水分解防止劑 、分解防止劑、峨化鋅。 另外,也可使用溶融鹽作為電解質,較佳的溶融鹽例 如含咪唑(imidazolium)或三唑(triazolium)型陽離子的離子 性液體、噁唑鏽(oxazolium )系、吡啶系、胍系及其組合。 相對這些陽離子也可與特定的陰離子組合,而對於上述的 溶融鹽也可加入添加物,且也可以具有液晶性的取代基。 另外’亦可使用四級銨鹽(Quaternary ammonium salt)系的 溶融鹽。 65 201210835 38254pif 上述以外的溶融鹽例如,藉由在破化鐘與其他至少^ 種類的鋰鹽(例如,醋酸鋰、過氣酸鋰等)中混合聚環氧乙 燒,而在室溫下具有流動性者等。 另外,也可以藉由在包括電解質與溶劑的電解液中, 添加凝膠化劑而凝膠化,以使電解質擬固體化。凝膠化劑 例如是,分子量1000以下的有機化合物、分子量500 —5000 的範圍的Si含有化合物、由特定的酸性化合物與鹼性化合 物形成的有機鹽、山梨醇衍生物(sorbit〇1 derivative)、聚乙 烯基"比咬》 另外,也可使用將基質高分子(matrix p〇lymer)、交聯 型高分子化合物或單體、交聯劑、電解質及溶劑侷限在高 分子中的方法。基質高分子較佳為在主鏈或側鏈的重複單 元中具有含氮雜環的高分子及使其與親電子性化合物反應 的交聯劑、具有三嗪結構的高分子、具有醯基尿素(ureide) 結構的高分子、含有液晶性化合物的高分子、有醚鍵(ether linkage)的高分子、聚氟化亞乙烯系、丙烯酸曱酯、丙烯酸 系、熱硬化性樹脂、交聯聚矽氧烷、聚乙烯醇(p〇lyvinyl alcoho卜PVA)、水y 7儿丰k y〆y 一小與糊精等的晶籠 化合物、添加含氧或硫高分子系、天然高分子等。在上述 中,也可添加鹼膨潤型高分子、具有可在一個高分子中形 成陽離子部位與碘的電荷移動錯和物的化合物的高分子 等。 基質尚分子可用2官能以上的異氰酸醋(jS〇Cyanate)作 為一部份的成分,其也可使用含有與羥基、胺基、羧基等64 S 201210835 38254pif The amount is 1% by mass to 50% by mass. Further, γ-butyrolactone may be contained in the electrolyte, whereby the diffusion efficiency of the adduct ions may be increased and the conversion efficiency may be improved. The addition of the electrolyte_, in addition to the above-mentioned 4-t-butyl acridine, may be added to an amine pyridine aminopyridine compound, a benzimiazole compound, or an aminotriazole system. Compounds and amines, aminothiazole compounds, glutinous rice compounds, amino triazine compounds, urea derivatives, amide compounds, pyrimidine compounds, and Nitrogen-containing heterocycle. Further, in order to improve the efficiency, a method of controlling the moisture of the electrolyte may be employed. A preferred method for controlling moisture includes a method of controlling the concentration and a method of coexisting with the dehydrating agent. In order to reduce the toxicity of the filling, a cyclodextrin-containing dathrate compound may be used, and in contrast, a method of frequently replenishing water may be used. Further, an anti-oxidation inhibitor, a hydrolysis inhibitor, a decomposition inhibitor, and zinc telluride may be added as a cyclic amidine. Further, a molten salt may be used as the electrolyte, and a preferred molten salt such as an ionic liquid containing an imidazolium or a triazolium type cation, an oxazolium system, a pyridine system, an anthraquinone system, and combinations thereof . These cations may be combined with a specific anion, and an additive may be added to the above-mentioned molten salt, and a liquid crystal substituent may also be added. Further, a molten salt of a quaternary ammonium salt system can also be used. 65 201210835 38254pif A molten salt other than the above is, for example, mixed with a polyethylene oxide in a decomposing clock and at least other lithium salts (for example, lithium acetate, lithium percarbonate, etc.), and has a room temperature Liquidity, etc. Alternatively, it may be gelated by adding a gelling agent to an electrolytic solution including an electrolyte and a solvent to pseudo-solidify the electrolyte. The gelling agent is, for example, an organic compound having a molecular weight of 1,000 or less, an Si-containing compound having a molecular weight of 500 to 5,000, an organic salt formed of a specific acidic compound and a basic compound, or a sorbitol derivative (sorbit〇1 derivative). Polyethylene-based "Bite" In addition, a method of limiting a matrix polymer, a cross-linking polymer compound or a monomer, a crosslinking agent, an electrolyte, and a solvent to a polymer can also be used. The matrix polymer is preferably a polymer having a nitrogen-containing heterocyclic ring in a repeating unit of a main chain or a side chain, a crosslinking agent which reacts with an electrophilic compound, a polymer having a triazine structure, and a mercapto urea. (ureide) polymer, liquid crystal compound-containing polymer, ether linkage polymer, polyfluorinated vinylene, decyl acrylate, acrylic, thermosetting resin, crosslinked polyfluorene Oxygen alkane, polyvinyl alcohol (p〇lyvinyl alcoho PVA), water y 7 儿 丰 〆 一 a small crystal cage compound such as dextrin, addition of oxygen or sulfur polymer system, natural polymer, and the like. In the above, a base swelling polymer, a polymer having a compound capable of forming a cation moiety and a charge shifting property of iodine in one polymer may be added. The matrix may also be a component having two or more functional isocyanates (jS〇Cyanate) as a part, and it may also be used with a hydroxyl group, an amine group, a carboxyl group, or the like.
S 66 201210835 38254pif 的官能基反應的交聯聚合物的種類。另外,可使用將藉由 石夕氫基(hydrosilyl group)與雙鍵性化合物的交聯高分子、 聚颯酸(polysulfone acid)或聚緩酸(polycarboxylic acid)等 ’與2價以上的金屬離子化合物反應的交聯方法。 能夠利用與上述擬固體的電解質組合而較佳地使用 的溶劑’可列舉含有特定的填酸酯(phosphoric acid ester) 、含碳酸伸乙醋(ethylene carbonate)的混合溶劑、具有特定 的介電常數(dielectric constant)的溶劑。另外,也可保持固 體電解質膜或於細孔保持液體電解質溶液,其方法較佳為 列舉導電性高分子膜、纖維狀固體、濾膜等的布狀固體。 此外’也可用p型半導體或電洞傳輸材料等的固體電 荷傳輸層,以替代以上的液體電解質及凝固體電解體。電 ,傳輸材料較佳為列舉聚噻吩、聚苯胺、聚吡咯及聚矽烷 等的導電性高分子、共有2個環以C、si等四面體結構為中 =兀素的螺環(spiro)化合物、三芳基胺(triarylamine)等的 芳香族胺衍生物、聯伸三苯(triphenylene)衍生物、含氮雜 環衍生物、液晶性氰衍生物。 a因為氧化還原對可成為電子的載體,所以某程度的濃 又疋有必要的,其浪度總計較佳為〇, 以上,更佳 為0. 1 mole/L,更較佳為〇· 3 m〇ie/L以上。上述的濃产的 上限並無特別的限制,通常為5咖趾左右。^的 [實例] 、下基於貫例來更佳詳細說明本發明,然本發明並 不限定於此。 67 201210835 38254pif [色素的調製] 將下述的(SA-1)0. 45 g與下述的(sb-i)〇 26 g,在1~ 丁醇10 ml與曱苯10 ml的混合溶劑中混合,然後在丨⑼^下 一邊加熱4小時一邊擾拌。之後,將所得到的結晶以減壓過 渡進行過滤’利用發凝膠管柱層析(silica gel c〇lumn chromatography)純化,以調製出上述的色素S14 〇 26g。 [化 46]S 66 201210835 38254pif The type of crosslinked polymer of the functional group reaction. Further, a crosslinked polymer such as a hydrosilyl group and a double bond compound, a polysulfone acid or a polycarboxylic acid, and a metal ion having a valence of 2 or more may be used. The crosslinking method of the compound reaction. A solvent which can be preferably used in combination with the electrolyte of the above-mentioned pseudo solids can be exemplified by a specific mixed acid containing a specific acid ester, an ethylene carbonate-containing ethylene carbonate, and a specific dielectric constant. (dielectric constant) solvent. Further, the solid electrolyte membrane may be held or the liquid electrolyte solution may be held in the pores. The method is preferably a cloth-like solid such as a conductive polymer membrane, a fibrous solid or a filter. Further, a solid charge transport layer such as a p-type semiconductor or a hole transport material may be used instead of the above liquid electrolyte and solidified body electrolyte. The electroconductive material and the transport material are preferably a conductive polymer such as polythiophene, polyaniline, polypyrrole or polydecane, and a spiro compound having two tetrahedral structures such as C and Si as a medium-halogen. An aromatic amine derivative such as triarylamine, a triphenylene derivative, a nitrogen-containing heterocyclic derivative, or a liquid crystalline cyanide derivative. a mole/L, more preferably 〇·3, because a redox pair can be a carrier for electrons, so a certain concentration is necessary, and the total wave length is preferably 〇, more preferably 0.1 mole/L, more preferably 〇·3 M〇ie/L or more. The upper limit of the above-mentioned concentrated production is not particularly limited, and is usually about 5 toes. The present invention will be described in more detail based on the examples, and the present invention is not limited thereto. 67 201210835 38254pif [Preparation of Pigment] The following (SA-1) 0. 45 g and the following (sb-i) 〇 26 g are mixed in a solvent mixture of 1 to butanol 10 ml and toluene 10 ml. Mix and then stir while stirring for 4 hours under 丨(9)^. Thereafter, the obtained crystal was subjected to filtration under reduced pressure, and purified by silica gel c〇lumn chromatography to prepare the above-mentioned dye S14 〇 26 g. [Chem. 46]
++
HOOCHOOC
SB-1 [實驗1] (光電轉換元件的製作) 以下方式來製作 如圖1所示的光電轉換元件可如,〜〜不扶奸。 在玻璃基板上,藉由濺鍍形成摻雜有氟的氧化錫以d 為透明導電膜,然後利用雷射切割,將透明導電膜分割成 個部分。之後,在其中一個導電膜上燒結銳鈦礦型氧化d ,以製作受光電極。接著,在受光電極上,塗佈含有矽4 子與金紅礦型氧化鈦為40 : 60(質量比)的分散液,及進^ 燒,,以形成絕緣性多孔體。半導體微粒子的塗佈量為^ g/m2 ’繼之形成碳電極以作為對極。 接著’在下述表1中所記載的色素的乙醇溶液中, 潰48小時。然後,將染附增感色素的玻璃浸潰在4_第三.SB-1 [Experiment 1] (Production of photoelectric conversion element) The following methods are used to produce the photoelectric conversion element as shown in Fig. 1. On the glass substrate, fluorine-doped tin oxide is formed by sputtering to have d as a transparent conductive film, and then the transparent conductive film is divided into portions by laser cutting. Thereafter, an anatase-type oxidation d is sintered on one of the conductive films to fabricate a light-receiving electrode. Next, a dispersion containing 4:60 (mass ratio) of cerium 4 and rhodopsin-type titanium oxide was applied to the light-receiving electrode, and then baked to form an insulating porous body. The coating amount of the semiconductor fine particles is ^ g / m 2 ' followed by formation of a carbon electrode as a counter electrode. Then, it was smashed in an ethanol solution of the dye described in Table 1 below for 48 hours. Then, the glass dyed with the sensitizing pigment is immersed in 4_third.
6S S 201210835 38254pif 基呲啶的1 0%乙醇溶液中30分鐘後,以乙醇清洗並使之自然 乾燥。所得到的感光體的厚度為10 μιη。色素量為,可視 色素的種類,適合地選自0. 1 mmole/m2〜10 rnmole/m2的範 圍。 電解液可使用碘化二曱基丙基咪唑(0.5 mole/L)、碘 (0· 1 mole/L)的甲氧基丙腈(methoxypropionitrile)溶液。 (色素的極大吸收波長的測定) 測定所使用的色素的最大吸收波長,其結果如表1所 示。最大吸收波長的測定可利用分光光度計(U-4100(商品 名)、日立High-Technology公司製造)進行,溶液可使用THF :乙醇=1 : 1,濃度可調整成2μΜ。 (光電轉換效率的測定) 藉由使500W的氙燈(ushi〇公司製造)的光,通過 AM1.5G濾、光片(Oriel公司製造)及銳波濾、光片(Kenko L-42 ,商品名),而產生不含紫外線的模擬太陽光。上述的光的 強度為89 mW/cm2。在所製作的光電轉換元件上照射上述 的光’以電流電壓測定裝置(Keithley 238型,商品名)來測 定光電轉換特性。 ' 光電化學電池的轉換效率的初期值的測定結果,在下 述的表1中表示為轉換效率。轉換效率為2· 5%以上者以◎表 示,1%以上、不到2.5%者以〇表示,0.3%以上、不到1% 者以△表示,不到0· 3%者以X表示,而轉換效率為〇.挑以上 者合格,不到0.3%者不合格。另外,相對轉換效率的初期 值,以500小時後的轉換效率的降低當作耐久性來進行評價 69 201210835 。上述的結果,90%以上者評價為◎,60%以上、不到90% 者評價為〇’ 40%以上、不到60%者評價為△,不到40%者評 價為X ’而相對轉換效率的初期值,5〇〇小時後的轉換效率 為60%以上者合格,不到60%者不合格。 表1 試料號碼 色素 色素的極大吸收 波長(nm) 轉換效率 耐久性 備註 1-1 s-i 741 Δ 〇 本發明 1-2 S-2 739 〇 〇 本發明 1-3 S-3 735 〇 〇 本發明 1-4 S-4 — - 727 〇 〇 本發明 1-5 S-5 727 〇 〇 本發明 1-6 S-6 746 〇 〇 未發明 1-7 S-7 782 ◎ ◎ 本發明 1-8 S-8 769 〇 〇 本發明 1-9 S-9 752 ◎ 〇 本發明 1-10 S-10 745 〇 〇 本發明 1-11 S-11 788 △ 〇 本發明 1-12 S-12 786 〇 〇 本發明 1-13 S-13 765 〇 〇 本發明 1-14 S-14 772 ◎ ◎ 本發明 1-15 S-15 772 ◎ ◎ 本發明 1-16 S-16 773 ◎ ◎ 本發明 1-17 S-17 761 〇 〇 未發明 1-18 S-18 791 ◎ ◎ 本發明 1-19 T-2 790 〇 ◎ 本發明 1-20 T-6 785 ◎ ◎ 本發明 1-21 T-9 800 ◎ ◎ 本發明 1-22 T-10 810 ◎ ◎ i發明 1-23 T-12 800 ◎ ◎ 本發明 1-24 T-16 770 ◎ ◎ 本發明 1-25 T-17 770 ◎ ◎ 本發明 1-26 T-18 770 ◎ ◎ 本發明 1-27 T-24 770 ◎ ◎ 本發明 1-28 T-30 800 ◎ ◎ 本發明 70After 6 minutes of 6S S 201210835 38254pif acridine in 10% ethanol, it was washed with ethanol and allowed to dry naturally. The thickness of the obtained photoreceptor was 10 μm. The amount of the pigment is, in view of the kind of the visible pigment, suitably selected from the range of 0.1 mmole/m2 to 10 rnmole/m2. As the electrolytic solution, a methoxypropionitrile solution of dimercaptopropylimidazolium iodide (0.5 mole/L) and iodine (0.1 mole/L) can be used. (Measurement of the maximum absorption wavelength of the dye) The maximum absorption wavelength of the dye used was measured, and the results are shown in Table 1. The measurement of the maximum absorption wavelength can be carried out by using a spectrophotometer (U-4100 (trade name), manufactured by Hitachi High-Technology Co., Ltd.), and the solution can be adjusted to 2 μM by using THF:ethanol = 1:1. (Measurement of photoelectric conversion efficiency) By using a 500W xenon lamp (manufactured by ushi Co., Ltd.), it passes AM1.5G filter, light sheet (manufactured by Oriel), sharp wave filter, and light sheet (Kenko L-42, trade name). ), producing a simulated sunlight that does not contain ultraviolet light. The above light intensity is 89 mW/cm2. The above-described light was irradiated onto the produced photoelectric conversion element. The photoelectric conversion characteristics were measured by a current-voltage measuring device (Keithley Model 238, trade name). The measurement results of the initial values of the conversion efficiency of the photoelectrochemical cell are shown as conversion efficiency in Table 1 below. When the conversion efficiency is 2.5% or more, it is represented by ◎, and when it is 1% or more and less than 2.5%, it is represented by ,, and when it is 0.3% or more, less than 1% is represented by Δ, and less than 0. 3% is represented by X. The conversion efficiency is 〇. The above is qualified, and less than 0.3% is unqualified. In addition, the initial value of the relative conversion efficiency was evaluated as the durability after the reduction of the conversion efficiency after 500 hours 69 201210835 . 90% or more of the above results were evaluated as ◎, 60% or more, less than 90% were evaluated as 〇' 40% or more, less than 60% were evaluated as △, and less than 40% were evaluated as X' and relative conversion The initial value of efficiency is acceptable if the conversion efficiency after 5 hours is 60% or more, and less than 60% is unqualified. Table 1 Sample number Pigment pigments Maximum absorption wavelength (nm) Conversion efficiency Durability Remarks 1-1 si 741 Δ 〇 The present invention 1-2 S-2 739 〇〇 The present invention 1-3 S-3 735 〇〇 The present invention 1 -4 S-4 - - 727 〇〇 1-5 S-5 727 of the present invention 〇〇 1-6 S-6 746 of the present invention 〇〇 not invented 1-7 S-7 782 ◎ ◎ 1-8 S- of the present invention 8 769 〇〇 1-9 S-9 752 of the present invention ◎ 1-10 S-10 745 of the present invention 1 1-11 S-11 788 of the present invention △ 〇 1-12 S-12 786 of the present invention 1-13 S-13 765 〇〇 1-14 S-14 772 of the present invention ◎ ◎ 1-15 S-15 772 of the present invention ◎ ◎ 1-16 S-16 773 of the present invention ◎ ◎ 1-17 S-17 of the present invention 761 〇〇Not invented 1-18 S-18 791 ◎ ◎ 1-19 T-2 790 〇 ◎ ◎ 1-20 T-6 785 ◎ ◎ The present invention 1-21 T-9 800 ◎ ◎ The present invention 1 -22 T-10 810 ◎ ◎ i invention 1-23 T-12 800 ◎ ◎ 1-24 T-16 770 of the present invention ◎ ◎ 1-25 T-17 770 of the present invention ◎ ◎ 1-26 T-18 770 of the present invention ◎ ◎ 1-27 T-24 770 of the present invention ◎ ◎ 1-28 T-30 800 of the present invention ◎ ◎ 70 of the present invention
S 201210835 38254pif 1-29 T-37 820 ◎ ◎ 本發明 1-30 T-41 795 〇 ◎ 本發 1-31 T-42 810 ◎ ◎ 本發f 1-32 T-43 810 ◎ ◎ 本發明 1-33 A-1 731 〇 X 比 1-34 A-2 770 〇 X 比較奋 在實驗1〜10中’使用以下的A-l及A-l作為比較色素。 [化 47] 比較用化合物S 201210835 38254pif 1-29 T-37 820 ◎ ◎ The present invention 1-30 T-41 795 〇 ◎ The present hair 1-31 T-42 810 ◎ ◎ The present invention f 1-32 T-43 810 ◎ ◎ The present invention 1- 33 A-1 731 〇X is more than 1-34 A-2 770 〇X. In the experiments 1 to 10, 'the following Al and Al are used as the comparative pigments. Comparative compound
由表1可知’使用本發明的色素的光電化學電池,轉 換效率的初期值為合格標準’而且經過500小時後的轉換效 率為初期值的60%以上,且表示出優異的耐久性。 對於上述’使用比較色素的情況下,轉換效率的初期 值為合格標準,但在耐久性上有問題。 [實驗2;| 藉由在玻璃基板上製作ITO膜,然後利用在其上方積 層FTO膜’以製作透明導電膜。之後,藉由在透明導電膜 上形成氧化物半導體多孔質膜,而得到透明電極板。接著 ’使用此透明電極板來製作光電化學電池,並測定轉換效 71 201210835 38254pif 率。上述的方法如以下的(1)〜(5)。 (1) ITO(氧化姻錫)膜用原料化合物溶液的調製 將氣化铟(III)四水合物(indium(m) chl〇ride tetrahydrate)5. 58 g與氣化锡(II)二水合物(tin(II) cW〇ride dihydrate)〇. 23 g溶解於乙醇1 〇〇 ml中,以作為IT〇膜用原料 化合物溶液。 (2) FTO(fluorine-dopedtinoxide,氟摻雜氧化錫)膜用原料 化合物溶液的調製 將氣化錫(IV)五水合物〇. 701 g溶解於乙醇…中,然 後加入1化叙0. 592 g的飽和水溶液,之後將上述的混合物 放入超音波清洗機中約20分鐘至完全溶解,以作為ft〇膜 用原料化合物溶液 (3 ) ITO/FTO透明導電膜的製作 厚度2 mm的耐熱玻璃板的表面以化學清洗及乾燥後 ,將此玻璃板置於反應器中,以加熱器進行加熱。加熱器 的加熱溫度變成45(TC時,將以(1)得到的IT〇膜用原料化 合物溶液,由口徑〇.3:11111的喷嘴,在壓力〇〇6]^1^下,距 玻璃板400 mm的距離’進行25分鐘的喷霧。 在上述的ITO膜用原料化合物溶液的喷霧後,經過2 分鐘(在此期間,於玻璃基板表面持續喷霧乙醇,以抑制基 板表面溫度的上昇),加熱器的加熱溫度變成53〇。〇時,將 以(2 )得到的F Τ Ο膜用原料化合物溶液在同樣的條件下進 行嘴霧2分鐘30秒。根據上述,可得到在耐熱玻璃板上依序 形成有厚度530 nm的ITO膜、厚度m ^的^膜的透明As is clear from Table 1, the photoelectrochemical cell using the dye of the present invention has an initial value of conversion efficiency as an acceptable standard, and the conversion efficiency after 500 hours has passed is 60% or more of the initial value, and shows excellent durability. In the case where the above comparative dye is used, the initial value of the conversion efficiency is an acceptable standard, but there is a problem in durability. [Experiment 2; | A transparent conductive film was produced by forming an ITO film on a glass substrate and then laminating an FTO film thereon. Thereafter, a transparent electrode plate is obtained by forming an oxide semiconductor porous film on the transparent conductive film. Next, a photoelectrochemical cell was fabricated using this transparent electrode plate, and the conversion efficiency was measured. The above methods are as follows (1) to (5). (1) Preparation of a solution of a raw material compound for ITO (oxidized sulphate) film. Indium (m) chl〇ride tetrahydrate 5. 58 g and tin (II) vapor dihydrate (tin(II) cW〇ride dihydrate) 23. 23 g was dissolved in 1 〇〇ml of ethanol to serve as a raw material compound solution for IT ruthenium film. (2) Preparation of FTO (fluorine-doped tin oxide) film with a raw material compound solution. Dissolve tin (IV) pentahydrate 〇. 701 g in ethanol, and then add 1 to 0. 592 a saturated aqueous solution of g, and then the above mixture is placed in an ultrasonic cleaner for about 20 minutes to completely dissolve, as a raw material compound solution for ft〇 film (3) ITO/FTO transparent conductive film, heat-resistant glass having a thickness of 2 mm. After the surface of the board was chemically cleaned and dried, the glass plate was placed in a reactor and heated by a heater. When the heating temperature of the heater becomes 45 (TC), the raw material compound solution for the IT film obtained in (1) is passed from a nozzle having a diameter of 33:11111 at a pressure of ]6]^1^, from the glass plate. Spraying at a distance of 400 mm for 25 minutes. After spraying the raw material compound solution for the ITO film described above, it took 2 minutes (in the meantime, the ethanol was continuously sprayed on the surface of the glass substrate to suppress the rise of the substrate surface temperature). When the heating temperature of the heater is changed to 53 Torr, the raw material compound solution for the F Τ Ο film obtained in (2) is subjected to the mist under the same conditions for 2 minutes and 30 seconds. According to the above, the heat-resistant glass can be obtained. The ITO film with a thickness of 530 nm and the thickness of the film with a thickness of m ^ are sequentially formed on the plate.
S 72 201210835 38254pif 電極板。 為了比較’在厚度2 mm的财熱玻璃板上,同樣地分 別製作僅有成膜厚度53G nm的ITO膜的透明電極、僅有成 膜厚度180 nm的FTO臈的透明電極。 將上述3種的透明電極於加熱爐中以45〇它加熱2小時 〇 (4) 光電化學電池的製作 接下來’使用上述3種的透b月電極板,來製作日本專 利特許第426_4號公報_2卿之構制光電化學電池 ,化物半導體多孔質膜的形成為,將平均粒徑約髓 ^氧化鈦微粒子分散於乙腈巾成塗料(paste),然後利用棒 ,佈法(bar coating meth〇d)將該塗料於透明電極n上塗佈 f度15 μιη,接著乾燥後在450¾下進行1小時的烘烤。接 著,在氧化物半導體多孔質膜上承载表2記載的色素。 .而且,對極為使用在玻璃板上積層ΙΤΟ膜與FTO膜的 導電性基板’而電解質t使用包括峨/姨化物的非水溶液的 電解質。光電化學電池的平面尺寸為25mmx25随。 (5) 光電化學電池的評價 關於以⑷所制的光電化學電池,照賴似太陽光 ^1·5) ’利用與實驗1同樣的方法測定光電轉換特性,而 〔传轉換效率。其結絲示於表2。關於職效率,其表示 =將試料號碼2_9當作丨時的相對值。關於敎性,相對轉 ^效率的初期值,經過500小時後的轉換效率,猶以上者 為◎,60%以上、不到90%者為〇,4〇%以上、不到6〇%者 73 201210835 38254pif 為△,不到40%者為χ,而相對轉換效率的初期值,500小時 後的轉換效率為60%以上者合格,不到60%者不合格。 表2 試料號碼 導電膜 色素 轉換效率 耐久性 備註 2-1 僅ΠΌ S-2 0.55 〇 本發明 2-2 僅FTO S-2 0.59 〇 本發明 2-3 ITO+FTO S-2 0.89 〇1 本發明 2-4 僅ITO S-8 0.61 〇 本發明 2-5 僅FTO S-8 0.63 〇 本發明 2-6 ITO+FTO S-8 0.91 〇 本發明 2-7 僅ITO S-13 0.65 〇 本發明 2-8 僅FTO S-13 0.76 〇 本發明 2-9 ITO+FTO S-13 1.00 〇 本發明 2-10 僅ITO T-16 0.99 ◎ 本發明 2-11 僅FTO T-16 0.97 ◎ 本發明 2-12 ITO+FTO T-16 1.10 ◎ 本發明 2-13 僅ITO T-24 0.97 ◎ —本發明 2-14 僅FTO T-24 0.93 ◎ 本發明 2-15 ITO+FTO T-24 1.07 ◎ 本發明 2-16 僅ITO T-12 1.00 ◎ 本發明 2-17 僅FTO T-12 1.05 ◎ ^本發明 2-18 ITO+FTO T-12 1.30 ◎ 本發明 2-19 僅ITO A-2 0.62 X 比較例 2-20 僅FTO A-2 0.68 X 比較例 2-21 ITO+FTO A-2 0.82 X 比較例 由表2可知,導電層為僅有ITO膜的情況或僅有FTO膜 的情況時,即使是本發明的光電化學電池,其轉換效率也 會變低’而導電層為在ITO膜上形成ft〇膜的情況時,轉 換效率表示有變高的傾向。上述的傾向在比較例的光電化 學電池的情況下也同樣有。 儘管如此’相對於本發明的光電化學電池的均經過 74S 72 201210835 38254pif electrode plate. In order to compare 'on a heat-resistant glass plate having a thickness of 2 mm, a transparent electrode having an ITO film having a film thickness of 53 G nm and a transparent electrode having an FTO 成 having a thickness of 180 nm were formed in the same manner. The above three kinds of transparent electrodes were heated in a heating furnace at 45 Torr for 2 hours. (4) Preparation of a photoelectrochemical cell Next, the use of the above-mentioned three types of pervaporated electrode plates was carried out to prepare Japanese Patent No. 426_4. _2Qing's photoelectrochemical cell is formed, and the porous film of the compound semiconductor is formed by dispersing an average particle size of the titanium oxide fine particles in an acetonitrile towel and then using a bar coating method. d) The coating was applied to the transparent electrode n at a degree of 15 μm, followed by drying and baking at 4503⁄4 for 1 hour. Next, the dye described in Table 2 was carried on the oxide semiconductor porous film. Further, an electrolyte substrate which is formed by laminating a ruthenium film and an FTO film on a glass plate is used extremely, and an electrolyte containing a non-aqueous solution of ruthenium/deuterium is used for the electrolyte t. The planar size of the photoelectrochemical cell is 25 mm x 25. (5) Evaluation of photoelectrochemical cell The photoelectrochemical cell produced by (4) was measured for photoelectric conversion characteristics by the same method as that of Experiment 1, and the conversion efficiency was measured. The knots are shown in Table 2. Regarding the job efficiency, it means = the relative value when the sample number 2_9 is regarded as 丨. Regarding the stagnation, the initial value of the relative conversion efficiency, after 500 hours of conversion efficiency, the above is ◎, 60% or more, less than 90% are 〇, 4〇% or more, less than 6%% 73 201210835 38254pif is △, less than 40% is χ, and the initial value of relative conversion efficiency, the conversion efficiency after 500 hours is 60% or more, and less than 60% is unqualified. Table 2 Sample No. Conductive Film Pigment Conversion Efficiency Durability Remarks 2-1 Only ΠΌ S-2 0.55 〇 Inventive 2-2 FTO S-2 only 0.59 〇 2-3 ITO+FTO S-2 0.89 〇1 of the present invention 2-4 ITO S-8 0.61 only 〇 2-5 of the invention only FTO S-8 0.63 〇 2-6 of the invention ITO+FTO S-8 0.91 〇 the invention 2-7 only ITO S-13 0.65 〇 the invention 2 -8 FTO S-13 0.76 only 〇 2-9 ITO+FTO S-13 1.00 〇 〇 2-10 ITO T-16 0.99 ◎ ◎ 2-11 only FTO T-16 0.97 ◎ The present invention 2- 12 ITO+FTO T-16 1.10 ◎ 2-13 of the present invention only ITO T-24 0.97 ◎ - 2-14 of the present invention only FTO T-24 0.93 ◎ 2-15 of the present invention ITO+FTO T-24 1.07 ◎ The present invention 2 -16 ITO T-12 1.00 only ◎ 2-17 of the present invention only FTO T-12 1.05 ◎ ^ 2-18 ITO+FTO T-12 1.30 of the invention ◎ 2-19 of the invention only ITO A-2 0.62 X Comparative Example 2 -20 FTO only A-2 0.68 X Comparative Example 2-21 ITO+FTO A-2 0.82 X Comparative Example It can be seen from Table 2 that even if the conductive layer is only an ITO film or only an FTO film, In the photoelectrochemical cell of the invention, the conversion efficiency is also lowered, and the conductive layer is When the ITO film formation ft〇 film, showing conversion efficiency tends to become high. The above tendency is also similar in the case of the photovoltaic cell of the comparative example. Despite this, the photoelectrochemical cell of the present invention is subjected to 74
S 201210835. 500小時後的轉換效率均為6〇%以上,且顯示出優異的耐久 性’比較例的光電化學電池的經過5〇〇小時後的轉換效率不 到40%,而知具有耐久性的問題。 [實驗3] 在FTO膜上配置集電電極,以製作光電化學電池,並 評價轉換效率。評價為如下述,試驗電池(i)與試驗電池(iv) 的2種類。 (試驗電池⑴) 將100 mmxlOO mmx2 mm的耐熱玻璃板的表面以化 學清洗及乾燥後’將此玻璃板置於反應器中,以加熱器進 行加熱後’將上述的實驗2所使用的FTO(fluorine-d〇pedtin oxide’氟摻雜氧化錫)膜用原料化合物溶液,由口徑〇. 3 mm 的噴嘴’在壓力0.06 MPa下’距玻璃板4〇〇 mm的距離, 進行25分鐘的喷霧,以準備有FTO膜的玻璃基板。 在上述的基板表面,利用餘刻法(etching meth〇d),於 格子狀電路圖案上形成深5 μπι的溝。然後,以微影 (photolithographic)形成圖案後,使用氟酸進行蝕刻。為了 使金屬電鍍能形成,利用濺鍍法形成金屬導電層(晶種層 (Seed layer)),而且更可利用附加電鍍層形成金屬配線層。 金屬配線層是形成於由透明基板表面到凸透鏡狀3 μιη高 度。電路寬為60 μιη。由上述,遮蔽層5為利用SpD法形成 400 nm厚度的FTO膜,以作為電極基板⑴。電極基板⑴的 剖面形狀變成為如日本專利特開2〇〇4_丨46425中的圖2所示 75 201210835. 在電極基板(i)上’塗佈、乾燥平均粒徑25 nm的氧化 鈦分散液後,以450°C進行1小時加熱、燒結。然後,在表3 t所示的色素的乙醇溶液中浸潰4〇分鐘,以承載色素。另 外’預備探討有關於本發明中使用的色素對各種有機溶劑 的溶解性。上述結果得知能在曱苯中溶解,所以如表3中記 載,亦準備在甲苯溶液中被浸透4〇分鐘承載之物品。 通過5 0 μηι厚的熱可塑性聚烯烴樹脂板材(p〇ly〇lefin resin sheet),將鉑濺鍍基板與上述基板對向配置,且 使樹脂板材熱溶融用以固定兩極板。 然而’由在翻濺鍍極側預先打開之電解液的注液口, 注液入主成分t含有0.5 Μ的碘化鹽與〇. 〇5 Μ的碘的甲氧 基乙腈(methoxy acetonitrile),且注滿於電極間。而且,以 環氧系封裝樹脂來封裝周邊部及電解液注液口,並塗佈銀 塗料於集電端子部,以作為試驗電池⑴。接著,用與實驗1 同樣的方法,在試驗電池(i)上照射AM15的類似太陽光, 以測定轉換效率,而其結果表示於表3中。 (試驗電池(iv)) 以與試驗電池(i)同樣的方法,準備1〇〇 mmxl〇〇 mm 的配置有FTO膜的玻璃基板。在上述的1?1>〇玻璃基板上, 利用附加電鍍層法形成金屬配線層(金電路)。上述的金屬 配線層(金電路)為在基板表面上形成格子狀,而電路寬5〇 μηι、電路厚5㈣。然後,在其表面上,利用spD法形成厚 度300 nm的FTO膜當作遮蔽層,以作為電極基板(iv卜使用 SEM-EDX確認電極基板(iv)的剖面時,發現在配線底部可 201210835 38254pif 能有認為起因於電鍍抗蝕層的裙狀底部的潛入, 部分未覆蓋有FTO。 使用電極基板(iv),與試驗電池⑴同樣地進 驗電池㈣。用與實驗1同樣的方法,在試驗電池(iv) i昭射 AMI. 5的類似太陽光,以測定轉換效率。上述轉換效率的 初期值的結果在表3中表示為轉換效率。 、 轉換效率為2.5%以上者以◎表示,1%以上、 =〇表示’ 0·抓以上、不到1%者以△表示,不到〇 3% f以x表不,而轉換效率為〇. 3%以上者合格,不到〇. 3%者不 =格。另。外,相對轉換效率的初期值,5〇〇小時後的轉換效 ^ 以上者評價為◎,6〇%以上、不到9〇%者評價為 〇苴40%以上、不到6〇%者評價為△,不到4〇%者評價為X ’其在表3中表示為耐久性。相對轉換效率的初期值,500 小時後的轉換效率為60%以上者合格,不到60%者不合格。 77 2012108351. .pit 表3S 201210835. The conversion efficiency after 500 hours is 6 % or more, and exhibits excellent durability. The photoelectrochemical cell of the comparative example has a conversion efficiency of less than 40% after 5 hours, and is known to have durability. The problem. [Experiment 3] A collector electrode was placed on the FTO film to fabricate a photoelectrochemical cell, and the conversion efficiency was evaluated. The evaluation was as follows, and two types of test battery (i) and test battery (iv) were used. (Test cell (1)) After chemically cleaning and drying the surface of a heat-resistant glass plate of 100 mm x 100 mm x 2 mm, 'put the glass plate in a reactor and heat it with a heater'. The FTO used in the above experiment 2 ( Fluorine-d〇pedtin oxide's solution of the raw material compound for the film, sprayed by a nozzle having a diameter of 3 mm at a pressure of 0.06 MPa at a distance of 4 mm from the glass plate for 25 minutes. To prepare a glass substrate with an FTO film. On the surface of the substrate described above, a groove having a depth of 5 μm is formed on the lattice circuit pattern by an etching method. Then, after patterning by photolithography, etching is performed using hydrofluoric acid. In order to form metal plating, a metal conductive layer (seed layer) is formed by sputtering, and a metal wiring layer can be formed by using an additional plating layer. The metal wiring layer is formed at a height of 3 μm from the surface of the transparent substrate to the convex lens. The circuit is 60 μηη wide. From the above, the shielding layer 5 is an FTO film having a thickness of 400 nm formed by the SpD method as the electrode substrate (1). The cross-sectional shape of the electrode substrate (1) is changed to 75 201210835 as shown in Fig. 2 of Japanese Patent Laid-Open No. Hei. No. 4,464,425. On the electrode substrate (i), the coating and drying of titanium oxide having an average particle diameter of 25 nm are dispersed. After the solution, the mixture was heated and sintered at 450 ° C for 1 hour. Then, it was immersed in an ethanol solution of the pigment shown in Table 3 t for 4 minutes to carry the pigment. Further, it is preliminary to investigate the solubility of the dye used in the present invention for various organic solvents. The above results show that it can be dissolved in toluene, so as shown in Table 3, it is also prepared to be impregnated in a toluene solution for 4 minutes. The platinum sputter substrate is disposed opposite to the substrate by a 50 μη thick thermoplastic sheet, and the resin sheet is thermally melted to fix the two plates. However, 'the liquid injection port of the electrolyte which is pre-opened on the side of the splatter plating, the main component t contains 0.5 Μ of iodized salt and methoxy acetonitrile of 碘. 5 Μ iodine, And filled between the electrodes. Further, the peripheral portion and the electrolyte injection port were sealed with an epoxy-based encapsulating resin, and a silver paint was applied to the collector terminal portion to serve as a test cell (1). Next, similar sunlight of AM15 was irradiated on the test cell (i) in the same manner as in Experiment 1 to measure the conversion efficiency, and the results are shown in Table 3. (Test Battery (iv)) A glass substrate having an FTO film of 1 mm × 10 mm was prepared in the same manner as in the test battery (i). On the above-mentioned 1:1 glass substrate, a metal wiring layer (gold circuit) was formed by an additional plating method. The metal wiring layer (gold circuit) described above is formed in a lattice shape on the surface of the substrate, and has a circuit width of 5 μm and a circuit thickness of 5 (four). Then, on the surface thereof, an FTO film having a thickness of 300 nm was formed by using the spD method as a shielding layer to serve as an electrode substrate (iv. When the cross section of the electrode substrate (iv) was confirmed by SEM-EDX, it was found that the bottom of the wiring was 201210835 38254pif It is considered that the immersion of the skirt-shaped bottom portion due to the plating resist layer is partially covered with FTO. Using the electrode substrate (iv), the battery (4) was tested in the same manner as the test battery (1). The test was carried out in the same manner as in Experiment 1. The battery (iv) i radiant AMI. 5 is similar to sunlight to measure the conversion efficiency. The results of the initial values of the above conversion efficiency are shown as conversion efficiency in Table 3. The conversion efficiency is 2.5% or more, expressed as ◎, 1 % or more, =〇 means '0·grass above, less than 1% is represented by △, less than 〇3% f is represented by x, and the conversion efficiency is 〇. 3% or more are qualified, less than 〇. 3% In addition, the initial value of the relative conversion efficiency, the conversion effect after 5 hours, the above is evaluated as ◎, 6〇% or more, less than 9〇% is evaluated as 〇苴40% or more, Less than 6〇% are evaluated as △, and less than 4% are evaluated as X', which is expressed in Table 3 as Durability relative value of the initial conversion efficiency, the conversion efficiency after 500 hours was 60% or more are qualified, less than 60% were unacceptable. 77 2012108351. .pit Table 3
試料號碼 """3^i ~Γ2 3^3 3^4 ~3^5 ~Γ6 3^7 ~~3^8 ~3^9 ~3^10 3-11 3-12~~ 3-13 3-14 3-15~ 3-16~ 3-17~~ 3-18~~ 3-19~ 3-20~~ 為表U吏:本發明的色素的試驗電池的轉換效率 為l/ό以上,且表不出高的值。另外, 色素溶液中使用的溶劑,能使轉換效率提高(&料 ^試=3-3、3-4的對比)。對於使用比較色素的情況時 換效率的初期值有與本發關樣高的情況,但是相對 500小時制㈣效率大為祕,使用本伽的色素的情況 的耐久性降低明顯較少,且顯示優異的特性。 [實驗4] 製作過氧鈦酸及氧化鈦微粒子,並使用其以製作氧化 78 201210835 38254pif 物半導體膜。紐’使用氧化物半導贿以製作光電化學 電池,並進行評價。 (光電化學電池(A)的製作) (1) 氧化物半導體膜形成用塗佈液(A1)的調製 5 g的氫化欽懸浮於1 l的純水中,然後以3〇分鐘添加 入5質量百分比(%)的過氧化氫液4〇〇g,接著加埶至8〇力並 進行溶解,以調製過氧鈦酸的溶液。由上述溶液的全量分 餾90體積百分比(ν〇ι%),然後添加濃氨水調整酸鹼值至pH9 ,並放入尚壓釜中,以25(Tc在飽和蒸汽壓下進行5小時熱 液處理,以調製氧化鈦膠體粒子(A2)。將所得到的氧化& 膠體粒子,利用X光繞射,為結晶性高的銳鈦礦型氧化鈦。 接著,將上述所得到的氧化鈦膠體粒子(A2)濃縮至1〇 質量。/。’混合上述的過氧鈦酸溶液,以Ti〇2換算上述的混合 液中的鈦’以成為Τι〇2質量的3〇質量%的方式添加羥丙基纖 維素(hydroxypropyl cellulose)作為膜形成助劑,而調&半 導體膜形成用塗佈液(A1)。 (2) 氧化物半導體膜(A3)的製作 接下來,在摻雜氟的氧化錫作為電極層所形成的透明 玻璃基板上,塗佈上述塗佈液(A1)並且自然乾燥,然後使 用低壓水銀燈照射6〇〇〇 mJ/cm2的紫外線以使過氧酸 (peroxo acid)被分解,而使塗膜硬化。以3〇〇。匸加熱塗膜% 分鐘,進行羥丙基纖維素的分解及退火(anneaHng),以在 玻璃基板上形成氧化物半導體膜(A3)。 (3) 在氧化物半導體膜(A3)的色素的吸附 79 201210835 38254pif 接下來,調製本發明的色素的濃度3χ1〇-4 m〇le/L的乙 醇溶液,以作為分光增感色素。上述色素溶液為在以⑽ rpm旋轉,而塗佈於金屬氧化物半導體膜(A3)上,並進行乾 燥。然後’進行5次的塗佈及乾燥製程。 (4)電解質溶液的調製 在乙腈與碳酸伸乙醋的體積W : 5的混合溶劑中,溶 解蜗化四祕0·46 mole/L使其中細狀Q7 mGk/L的漢 度,以調製電解質溶液。 (5)光電化學電池(A)的製作 七,之吸附素的氧化物半導體膜(A3)所形成 :ίί 爾極’形成摻雜_氧化錫當作ΐ 2 ί為# °接著’在電極上,對向配置承载 的電解質溶液。然後,在電極間車 電曰1封入⑷ 學電池(Α)。 連解線,㈣作光電化 (光電化學電池(Β)的製作) 除了照射紫外線以分解過氧納 氣㈤的離子照射(曰新電氣製:離:=後’進行氬 照射Η)小時)之外,與氧化物半入裝置,以2〇〇… 成氧化物半導體聊3)。 11難3)同樣作法’以形 在氧化物半導體膜(B3) 化學電池(A)用同樣的作 與氧化物半導體膜(A3)相同, 上進行色素的吸附。然後,與光電 法,製作光電化學電池(B)。 (光電化學電池(C)的製作) 201210835 38254pif 以純水稀釋18.3g的四氣化鈦,得到含有用Ti〇2換算 為1· 0質量%的水溶液。一邊攪拌上述的水溶液,一邊添加 15%的氨水,以得到PH9.5的白色漿料。將上述漿料過濾清 洗’得到用Ti〇2換算為10· 2質量%的水和氧化鈦凝膠的濾餅 。然後,混合上述的濾餅與5質量%過氧化氫4〇〇 g,接著加 熱至80°C並進行溶解,以調製過氧鈦酸的溶液。由上述溶 液的全量分餾90 vol% ’然後添加濃氨水調整酸鹼值至pH9 ,並放入尚壓爸中,以250 C在飽和蒸汽壓下進行5小時水 熱處理,以調製氧化鈦膠體粒子(C2)。 接下來,使用以上述得到的過氧鈦酸溶液與氧化鈦膠 體粒子(C2),與氧化物半導體膜(A3)同樣作法以形成氧化 物半導體膜(C3),之後與氧化物半導體膜(A3)同樣作法, 進行本發明的色素的吸附以作為分光增感色素。然後,與 光電化學電池(A)用同樣的作法,製作光電化學電池(Q。 (光電化學電池(D)的製作) 以純水稀釋18. 3 g的四氣化鈦,得到含有用Ti〇2換算 為1. 〇質量%的水溶液。一邊攪拌上述的水溶液,一邊添加 15質置%的氨水’得到pH9_5的白色漿料。過濾清洗上述漿 料後,於純水中懸浮之0.6%的水和氧化鈦凝膠的漿料作為 Τι〇2 ’加入鹽酸至pH2後,放入高壓釜中,以18〇。〇在飽和 蒸汽壓下進行5小時水熱處理,以調製氧化鈦膠體粒子(D2) 〇 接著’將氧化鈦膠體粒子(D2)濃縮至10質量%,於其 中以Ti〇2換算成為30質量%的方式添加羥丙基纖維素作為 201210835 、 ----ρπ 膜形成助劑,以調製半導體膜形成用塗佈液。接下來,在 推雜敗的氧化錫作為電極層所形成的透明玻璃基板上,塗 佈上$塗佈液並自然乾燥,然後使用低壓水銀燈照射6〇〇〇 ^化111的紫外線,使塗膜硬化。繼之,以3〇〇°c加熱塗膜30 分鐘,進行經丙基纖維素的分解及退火(annealing),以形 成氧化物半導體膜(D3)。 接下來,與氧化物半導體膜(A3)同樣作法進行本發 月的色素的吸附以作為分光增感色素。然後,與光電化學 電池(A)用同樣的作法,製作光電化學電池(D)。 關於光電化學電池(A)〜(D),將照射類似太陽光 (AM1.5) ’利用與實驗丨同樣的方法測定光電轉換效率以 求得轉換效率。上述的轉換率的初期值的結果於表4中以轉 換效率表示。轉換效率為2. 5%以上者以◎表示,1%以上 ,、不到2.5%者以〇表示,〇.舰上、不到1%者以△表示 ,不到0. 3%者以X表示,而轉換效率為〇 3%以上者合格不 / J0. 3%者不合格。另外,相對轉換效率的初期值,$⑽小時 後的轉換效率,以上者評價為◎,6〇%以上、不到9〇% 者#價為〇 ’ 觸%者評價為△,不到棚者 評價為X,上述的值於表4中表示耐久性。相對轉換效率的 初期值,5GG小時後的轉換效率為以上者合格 者不合格。Sample number """3^i ~Γ2 3^3 3^4 ~3^5 ~Γ6 3^7 ~~3^8 ~3^9 ~3^10 3-11 3-12~~ 3 -13 3-14 3-15~ 3-16~ 3-17~~ 3-18~~ 3-19~ 3-20~~ Table U吏: The conversion efficiency of the test cell of the pigment of the present invention is l/ ό Above, and the table does not show a high value. In addition, the solvent used in the dye solution can improve the conversion efficiency (& ^ test = 3-3, 3-4 comparison). In the case of using a comparative pigment, the initial value of the conversion efficiency is higher than that of the present invention, but the efficiency is greater than the 500-hour system (four), and the durability reduction in the case of using the pigment of the gamma is significantly less, and the display is Excellent characteristics. [Experiment 4] Peroxytitanic acid and titanium oxide fine particles were produced and used to prepare an oxide 78 201210835 38254 pif semiconductor film. New's used an oxide semi-conductive bribe to make a photoelectrochemical cell and evaluated it. (Production of photoelectrochemical cell (A)) (1) Preparation of a coating liquid (A1) for forming an oxide semiconductor film 5 g of hydrogenation was suspended in 1 l of pure water, and then added to 5 masses in 3 minutes. A percentage (%) of hydrogen peroxide solution was 4 g, followed by twisting to 8 Torr and dissolution to prepare a solution of peroxotitanic acid. Fractional 90% by volume (ν〇ι%) from the full amount of the above solution, then add concentrated ammonia to adjust the pH to pH9, and put it into the still kettle, and perform 25-hour hydrothermal treatment at 25 °C under saturated steam pressure. The titanium oxide colloidal particles (A2) are prepared, and the obtained oxidized & colloidal particles are diffracted by X-rays to form an anatase-type titanium oxide having high crystallinity. Next, the obtained titanium oxide colloidal particles are obtained. (A2) Concentrated to 1 〇 mass. /. 'The above-mentioned peroxotitanic acid solution was mixed, and Ti 2 in the above-mentioned mixed liquid was converted into Ti 〇 2 to add hydroxypropyl acrylate in an amount of 3 〇 mass% of Τι〇2 mass. The hydroxypropyl cellulose is used as a film forming aid to adjust the coating liquid (A1) for forming a semiconductor film. (2) Preparation of an oxide semiconductor film (A3) Next, fluorine-doped tin oxide is used. On the transparent glass substrate formed as the electrode layer, the above coating liquid (A1) was applied and naturally dried, and then ultraviolet rays of 6 〇〇〇mJ/cm 2 were irradiated with a low pressure mercury lamp to decompose peroxo acid. And the coating film is hardened. The coating film is heated by 3 〇〇. The hydroxypropylcellulose is decomposed and annealed (anneaHng) to form an oxide semiconductor film (A3) on a glass substrate. (3) Adsorption of a pigment in an oxide semiconductor film (A3) 79 201210835 38254pif Next An ethanol solution having a concentration of the dye of the present invention of 3χ1〇-4 m〇le/L is prepared as a spectral sensitizing dye. The dye solution is applied to a metal oxide semiconductor film (A3) by being rotated at (10) rpm. On, and dry. Then '5 times of coating and drying process. (4) Preparation of electrolyte solution in the mixed solvent of acetonitrile and ethylene carbonate acetonitrile volume W: 5, dissolved worming four secrets 0 · 46 The mole/L makes the fineness of the Q7 mGk/L in order to modulate the electrolyte solution. (5) The fabrication of the photoelectrochemical cell (A), the formation of the oxide semiconductor film (A3) of the adsorbent: ίί 'Formation of doping_tin oxide as ΐ 2 ί is # ° Then 'on the electrode, the oppositely placed carrier electrolyte solution. Then, between the electrodes, the electric 曰 1 is enclosed (4) to learn the battery (Α). (4) For photoelectricization (production of photoelectrochemical cell (Β)) In addition to ultraviolet irradiation The line is decomposed by ion permeation (five) ion irradiation (manufactured by Fuxin Electric Co., Ltd.: after: = after 'argon irradiation Η) hour), with the oxide semi-injection device, 2 〇〇... into the oxide semiconductor chat 3 ). 11 Difficult 3) The same procedure as in the case of the oxide semiconductor film (B3) The chemical cell (A) is adsorbed in the same manner as the oxide semiconductor film (A3). Then, a photoelectrochemical cell (B) was produced by an electrophoto method. (Production of Photoelectrochemical Cell (C)) 201210835 38254pif 18.3 g of titanium tetrahydrate was diluted with pure water to obtain an aqueous solution containing 1.0% by mass in terms of Ti〇2. While stirring the above aqueous solution, 15% aqueous ammonia was added to obtain a white slurry of pH 9.5. The slurry was filtered and washed to obtain a filter cake of water and titanium oxide gel in an amount of 1.0% by mass in terms of Ti〇2. Then, the above filter cake and 4 mass% hydrogen peroxide 4 g were mixed, followed by heating to 80 ° C and dissolved to prepare a solution of peroxotitanic acid. The full amount of the above solution was fractionated by 90 vol%', then concentrated ammonia was added to adjust the pH to pH 9, and placed in a pressure dad, and hydrothermally treated at 250 C under a saturated vapor pressure for 5 hours to prepare titanium oxide colloidal particles ( C2). Next, the peroxotitanic acid solution obtained above and the titanium oxide colloidal particles (C2) are used in the same manner as the oxide semiconductor film (A3) to form an oxide semiconductor film (C3), followed by an oxide semiconductor film (A3). In the same manner, the adsorption of the dye of the present invention is carried out as a spectral sensitizing dye. Then, a photoelectrochemical cell (Q. (Production of photoelectrochemical cell (D)) was prepared in the same manner as in the photoelectrochemical cell (A), and 13.3 g of titanium tetrahydrate was diluted with pure water to obtain a Ti-containing titanium oxide. 2: An aqueous solution of 1.% by mass is added. While stirring the above aqueous solution, 15% of ammonia water is added to obtain a white slurry having a pH of 9 to 5. After washing the slurry, 0.6% of water is suspended in pure water. The slurry of titanium oxide gel was added as hydrochloric acid to pH 2 as Τι〇2', and then placed in an autoclave at 18 Torr. The hydrazine was hydrothermally treated under a saturated vapor pressure for 5 hours to prepare titanium oxide colloidal particles (D2). Then, hydroxypropylcellulose was added as a 201210835, ----ρπ film forming aid, by concentrating the titanium oxide colloidal particles (D2) to 10% by mass and adding 30% by mass in terms of Ti〇2. The coating liquid for forming a semiconductor film is prepared. Next, on the transparent glass substrate formed by pushing the discolored tin oxide as an electrode layer, a coating liquid is applied and naturally dried, and then irradiated with a low-pressure mercury lamp. ^111 UV rays, make coating After hardening, the coating film is heated at 3 ° C for 30 minutes to carry out decomposition and annealing of propyl cellulose to form an oxide semiconductor film (D3). Next, with an oxide semiconductor film ( A3) The same method is used to carry out the adsorption of the pigment in the present month as a spectral sensitizing dye. Then, a photoelectrochemical cell (D) is produced in the same manner as in the photoelectrochemical cell (A). About the photoelectrochemical cell (A) ~ ( D) Irradiation-like sunlight (AM1.5) 'The photoelectric conversion efficiency was measured by the same method as the experiment to obtain the conversion efficiency. The results of the initial values of the above-described conversion ratios are expressed by conversion efficiency in Table 4. The efficiency is 2.5% or more, expressed as ◎, 1% or more, and less than 2.5% is expressed by 〇, 舰. Ship, less than 1% is represented by △, less than 0. 3% is represented by X The conversion efficiency is 3% or more, and the pass is not acceptable. J. 3% is unqualified. In addition, the initial conversion value of the conversion efficiency, the conversion efficiency after $(10) hours, the above is evaluated as ◎, 6〇% or more, no To 9〇%, the price is 〇', the % of the touch is evaluated as △, and the less than the shed is evaluated as X, the above Values shown in Table 4 in durability relative to the initial value of the conversion efficiency, the conversion efficiency 5GG hours or more qualified persons who fail.
S 82 201210835 38254pifS 82 201210835 38254pif
由表4可知’使用本發明的色素的光電化學電池,轉 換效率的初期值為合格標準,而且經過500小時後的轉換效 率為初期值的60%以上’且表示出優異的耐久性。 相對上述,已知使用比較色素的情況下,轉換效率的 初期值為合格標準,但在耐久性上有問題。 [實驗5] 改變方法來進行氧化鈦的調製,由所得到的氧化鈦製 83 201210835 38254pif 作氧化物半導體膜及做光電化學電池,並進行其評價。 (1) 以熱處理法調製氧化鈦 (氧化鈦1(板鈦礦型)等) 使用市售的銳鈦礦型的氧化鈦(石原產業公司製造, 商品名ST-01) ’將其加熱至約9〇〇〇c而轉換為板鈦礦型的氧 化鈦,進而加熱至約丨,2001而作為金紅礦型的氧化鈦。然 後,分別依序作為比較氧化鈦1(銳鈦礦型)、比較氧化鈦 板鈦礦型)、比較氧化鈦1(金紅礦型)。 (2) 以濕式法合成氧化鈦 (氧化鈦2(板鈦礦型)等) 在安裝有回流冷卻器的反應槽中裝入蒸餾水954 ml, 加溫至95°C。一邊保持攪拌速度2〇〇 rpm,一邊將氣 ⑽量:16,'比重W、純度 以約5.0 ml/min的速度滴入到反應槽内的蒸餾水中。此時 ’要注意不要讓反應㈣溫度下^上述結果,四氣化鈦 濃度為0.25 m〇le/L(氧化鈦換算為2質量%)。在反應槽中, 反應液從關人彳始自濁,鱗雌的溫度持續到滴 入結束後’再昇溫加熱㈣點左右(〇,以 保持60分鐘至反應完全結束。 過濾由反應得到的溶膠,然後使用6(rc的 做成粉末。將粉末1XX総射法進行定量分析的為、 板鈇礦型121面的峰值強度)/(在三根重4位置^㈣产 )的比是G.38’(金紅礦型的主要峰值強度)/(在三根重= 置的峰值強度)的比是Q· Q5。由上述求得的氧化鈇為,^鈦 84 201210835 礦型約70· o質量% ’金紅礦型約丨.2質量%,銳鈦礦型約28. 8 質量%的結晶性。另外,利用穿透型電子顯微鏡來觀察上述 的微粒子,1次粒子的平均粒徑為〇 〇15 μπ!。 (氧化鈦3(板鈦礦型)等) 以瘵餾水稀釋三氣化鈦水溶液(鈦含有量:28%、比重 1. 5、純度99· 9%),並以鈦濃度換算作為〇. 25 m〇1/L的溶液 。此時,為了不讓液溫上昇進行冰冷卻,並且保持在 以下。接著,取上述溶液5〇〇 mi投入安裝有回流冷卻器的 反應槽,一邊加溫至85°C,一邊由臭氧氣體產生裝置以j L/min將純度瞧的臭氧氣體進行起泡(bubbling),以進行氧 化反應。在上述的狀態保持2小時,至反應完全結束。將所 得到的溶膠進行過濾及真空乾燥,以做成粉末。將上述粉 末以X光繞射法進行定量分析的結果為,(板鈦礦型丨21面 的峰值強度)/(在三根重疊位置的峰值強度)的比是〇 85,( 金紅礦型的主要峰值強度)/(在三根重疊位置的峰值強度) 的比是0。由上述求得的二氧化鈦為,板鈦礦型約98質量% ,金紅礦型約0質量%,銳鈦礦型約0質量%,約2%為無定形 。另外,利用穿透型電子顯微鏡來觀察上述的微粒子,i 次粒子的平均粒徑為0.05 μπ!。 (光電化學電池的製作及評價) 以上述的方法調製的氧化鈦丨〜3作為半導體,利用以 下的方法製作使用日本特開2000-340269號公報記載的圖1 所示結構的光電轉換元件的光電化學電池。 在玻璃基板上塗佈摻雜氟的氧化錫,以作為導電性透 85 201210835 38254pif 明電極。在電極面上以個別的氧化鈦粒子為原料做成塗料 ,以棒塗佈法於電極上塗佈厚度,在5〇〇。^下進行 烘烤以形成膜厚約2〇 μπι的薄層。 如實驗1所探討,得知本發明所使用的色素對各種有 機溶劑十的溶解性高,所以使用乙醇作為溶劑,對改變色 素=液的濃度並進行評價。本發明中使用的色素為,使用3 xlO Μ與6χ1〇·4μ的2標準的色素溶液。比較色素對於溶劑 的溶解性低,因無法調製6χ1〇·4Μ溶液,所以僅使用3χ1〇-4 Μ的色素溶液來評價。 調製如表5中所示的色素的濃度的乙醇溶液,將形成 ^上述的氧化鈦的薄層的玻璃基板浸潰於其中,保持在室 皿下12小時。上述的結果為,在氧化鈦的薄層上吸附有上 述的色素。 使用四丙銨的碘鹽與碘化鋰的乙腈溶液為電解質,鉑 為對極,以製作具有如日本專利特開漏-謂69號公報 杜圖1所不結構的光電轉換元件。光電轉換為,在上述的元 ^照射16G W的高壓水銀燈的光(以遽光片截止紅外線 :士 ’以與實驗1同樣的方法測定轉換效率的初期值 。上述 、,°果於表5中表示轉換效率。 轉換效率為2. 5%以上者以◎表示,1%以上、不到2·5% 以〇表不’ 0.3%以上、不龍者以△表示,不到〇. 3% 人t表不’而轉換效率為Q· 3%以上者合格,不到G. 3%者不 ^ °另外’相對轉換效率的初期值,關小時後的轉換效 90/。以上者β平價為◎,6〇%以上、不到9⑽◦者評價為As is clear from Table 4, in the photoelectrochemical cell using the dye of the present invention, the initial value of the conversion efficiency is an acceptable standard, and the conversion efficiency after 500 hours has passed is 60% or more of the initial value' and shows excellent durability. In contrast to the above, it is known that when a comparative dye is used, the initial value of the conversion efficiency is an acceptable standard, but there is a problem in durability. [Experiment 5] The titanium oxide was prepared by changing the method, and an oxide semiconductor film and a photoelectrochemical cell were prepared from the obtained titanium oxide 83 201210835 38254pif and evaluated. (1) Preparation of titanium oxide (titanium oxide 1 (brookite type), etc.) by a heat treatment method Using a commercially available anatase type titanium oxide (manufactured by Ishihara Sangyo Co., Ltd., trade name ST-01) 'heat it to about 9 〇〇〇c was converted into brookite-type titanium oxide, and further heated to about 丨, 2001 as a gold-red type titanium oxide. Then, titanium oxide 1 (anatase type), comparative titanium oxide brookite type, and titanium oxide 1 (gold red ore type) were compared in order. (2) Synthesis of titanium oxide by wet method (titanium oxide 2 (brookite type), etc.) 954 ml of distilled water was placed in a reaction vessel equipped with a reflux condenser, and the mixture was heated to 95 °C. While maintaining the stirring speed at 2 rpm, the amount of gas (10): 16, '% specific gravity W, purity was dropped into the distilled water in the reaction tank at a rate of about 5.0 ml/min. At this time, care should be taken not to let the reaction (4) temperature be the above result, and the concentration of titanium tetra-titanate is 0.25 m〇le/L (2 mass% in terms of titanium oxide). In the reaction tank, the reaction liquid starts to turbid from the start of the human body, and the temperature of the scaly female continues until the end of the instillation, and then the temperature is raised and heated (four) points (〇, to maintain the reaction for 60 minutes until the reaction is completely completed. Filtering the sol obtained by the reaction Then, using 6 (a powder made of rc. The quantitative analysis of the powder by the 1XX sputum method, the peak intensity of the 121-plate surface of the samarium ore type) / (in the case of three weights of 4 positions ^ (4)) is G.38 The ratio of 'the main peak intensity of the gold-red mineral type' / (the peak intensity at the three weights) is Q·Q5. The yttrium oxide obtained by the above is ^70 84 201210835 ore type about 70· o mass% 'The gold red ore type is about 2% by mass, and the anatase type is about 28.8% by mass of crystallinity. In addition, the above-mentioned fine particles are observed by a transmission electron microscope, and the average particle diameter of the primary particles is 〇〇. 15 μπ! (titanium oxide 3 (brookite type), etc.) Diluted the aluminum trititanate aqueous solution (titanium content: 28%, specific gravity 1.5, purity 99·9%) with distilled water, and the concentration of titanium The solution was converted to 25. 25 m〇1/L. At this time, in order to prevent the liquid temperature from rising, ice cooling was performed and kept below. 5 〇〇mi of the above solution was placed in a reaction tank equipped with a reflux condenser, and the ozone gas generated by the ozone gas generating device was bubbled at a rate of j L/min while heating to 85 ° C. The oxidation reaction was carried out for 2 hours in the above state until the reaction was completely completed. The obtained sol was filtered and vacuum dried to obtain a powder. The result of quantitative analysis of the powder by X-ray diffraction was , (the peak intensity of the brookite-type 丨21 surface) / (the peak intensity at the three overlapping positions) is 〇85, (the main peak intensity of the gold-red mineral type) / (the peak intensity at the three overlapping positions) The ratio is 0. The titania obtained by the above is about 98% by mass of the brookite type, about 0% by mass of the gold ore type, about 0% by mass of the anatase type, and about 2% of amorphous. The above-mentioned fine particles were observed by a transmission electron microscope, and the average particle diameter of the i-th particle was 0.05 μπ! (Production and evaluation of photoelectrochemical cell) Titanium oxide 丨3 prepared by the above method was used as a semiconductor, and was produced by the following method. Make A photoelectrochemical cell of a photoelectric conversion element having the structure shown in Fig. 1 described in JP-A-2000-340269. A fluorine-doped tin oxide is applied onto a glass substrate to serve as a conductive electrode 85 201210835 38254pif a bright electrode. The surface is made of individual titanium oxide particles as a raw material, and the thickness is applied to the electrode by a bar coating method, and baking is performed at 5 Å to form a thin layer having a film thickness of about 2 μm. As a result of investigation, it was found that the dye used in the present invention has high solubility in various organic solvents. Therefore, ethanol was used as a solvent, and the concentration of the dye=liquid was changed and evaluated. The dye used in the present invention is a standard dye solution of 3 x 10 Å and 6 χ 1 〇 4 μ. The comparative dye had low solubility in a solvent, and since it was impossible to prepare a 6χ1〇·4Μ solution, it was evaluated using only a dye solution of 3χ1〇-4 。. An ethanol solution having a concentration of the dye as shown in Table 5 was prepared, and a thin glass substrate on which the above titanium oxide was formed was immersed therein and kept under a chamber for 12 hours. As a result of the above, the above-mentioned dye was adsorbed on a thin layer of titanium oxide. An iodine salt of tetrapropylammonium and an acetonitrile solution of lithium iodide were used as an electrolyte, and platinum was a counter electrode to prepare a photoelectric conversion element having no structure as disclosed in Japanese Patent Laid-Open No. 69-No. The photoelectric conversion was carried out by irradiating the light of a high-pressure mercury lamp of 16 G W in the above-mentioned element (the cut-off infrared ray of the calender: the 'initial value of the conversion efficiency was measured by the same method as the experiment 1). The above is shown in Table 5. The conversion efficiency is 2.5% or more, expressed as ◎, 1% or more, less than 2.5%, the 〇 table is not '0.3% or more, the undone is △, less than 〇. 3% t is not 'the conversion efficiency is Q · 3% or more are qualified, less than G. 3% are not ^ ° other 'relative conversion efficiency of the initial value, after the closing of the conversion effect 90 /. The above β parity is ◎ , 6〇% or more, less than 9(10)◦
S 86 201210835 〇’ 40%以上、不到6〇%者評價為△,不到4〇%者評價為乂 ,上述的值於表5中表示耐久性。相對轉換效率的初期值, 500小時後的轉換效率為6〇%以上者合格,不到6〇%者不合格 表5 試料號碼 氧化鈦 色素 色素溶液濃 度(χ10-4Μ) 轉換 效率 财久性 備言主 5-1 氧化鈦1 S-2 3 〇 〇 本發明 5-2 氧化鈦2 S-2 3 〇 〇 本發明 5-3 氧化鈦3 S-2 3 ◎ 〇 本發明 5-4 5-5 氧化鈦1 卜氧化鈦2 S-2 6 ◎ 〇 本發明 S-2 6 ◎ 〇 本發明 5-0 5-7 氧化鈦3 S-2 6 ◎ 〇 本發明 氧化欽1 S-8 3 〇 ◎ 本發B月 5-〇 c η 氧化鈦2 S-8 3 ◎ ◎ 本發明 5-10 5-11 氧化鈦3 S-8 3 ◎ ◎ 本發明 我I化:¾ 1 S-8 6 ◎ ◎ 本發明 氣化鈦2 S-8 6 ◎ 1 ◎ 本發明 J-\ Δ 氣化鈦3 S-8 6 ◎ ◎ 本發明 5-13 氧化鈦1 T-10 3 〇 ◎ 本發明 本發明 5-14 氧化鈦2 T-10 3 〇 ◎— 5-15 C 1 f. __^匕鈦3 T-10 — ' 3 ◎ ◎ D- 1 Ο 5-17 〜^鈦1 匕鈦2 T-10 T-10 6 6 ◎ (Q) ◎ (0) 本發明 5-18 __^化鈦3 T-10 6 ◎ ◎ 本發明 本發明 5-19 ^化欽1 Α·1 5-20 __g化鈦2 Α-1 ό 3 〇 X 比較例 5-21 5-22 5-23 匕鈦3 〜各化鈦1 Α-1 Α-2 3 3 ◎ 〇 A X Δ 比較例 比較例 卜卜.柄 5-24 匕鈦2 1__^匕鈦3 Α-2 Α-2 3 3 ◎ ◎ ^ *l〇C Ί7'1 比較例 比較例 由表5可知,使用本發明的色素的情況,藉由將提高 87 201210835 38254pif 色素溶液的濃度,而得知轉換效率的初期值會變高。這被 認為是因為藉由提高色素溶液的濃度高,對氧化鈦的色素 的吸附也會變多。使用比較色素的情況時,轉換效率的初 期值也為合格標準。 但是,關於耐久性,相對於使用比較色素的情況時, 全都不合格’而使用本發明的色素的情況則顯示出優異的 特性。 [實驗6] 使用不同粒徑的氧化鈦,製作已分散的半導體微粒子 的塗料’然後使用其以製作光電化學電池,並評價其特性 〇 [塗料的調製] (塗料1) 與球形的Ti〇2粒子(銳鈦礦型、平均粒徑:25 nm、以 下稱為球形Ti〇2粒子1)放入js肖酸溶液中,藉由擾拌來調製 鈦漿料。接著,在鈦漿料中加入纖維素系黏結劑以作為增 黏劑,並進行混練以調製塗料。 (塗料2) 球形Ti〇2粒子1與球形的Ti〇2粒子(銳鈦礦型、平均粒 徑.200 nm、以下稱為球形Ti〇2粒子2)放入硝酸溶液中, 藉由授拌來調製鈦漿料。接著,在鈦衆料中加入纖維素系 黏結劑以作為增黏劑,並進行混練以調製塗料(球形Ti〇2 粒子1 :球形丁丨〇2粒子2 = 30 : 70)。 2 (塗料3)S 86 201210835 〇' 40% or more, less than 6〇% was evaluated as Δ, and less than 4% was evaluated as 乂, and the above values are shown in Table 5. The initial value of the relative conversion efficiency, the conversion efficiency after 500 hours is more than 6〇%, and the less than 6〇% are unqualified. Table 5 Sample No. Titanium Pigment Pigment Solution Concentration (χ10-4Μ) Conversion Efficiency言 主 5-1 Titanium oxide 1 S-2 3 〇〇 The present invention 5-2 Titanium oxide 2 S-2 3 〇〇 The present invention 5-3 Titanium oxide 3 S-2 3 ◎ 〇 The present invention 5-4 5-5 Titanium oxide 1 Titanium oxide 2 S-2 6 ◎ 〇 S-2 6 ◎ 〇 〇 5-0 5-7 Titanium oxide 3 S-2 6 ◎ 氧化 氧化 氧化 氧化 氧化 1 1 1 1 1 1 1 B-month 5 - 〇c η titanium oxide 2 S-8 3 ◎ ◎ 5-10 5-11 of the present invention Titanium 3 S-8 3 ◎ ◎ The present invention I: I: 3⁄4 1 S-8 6 ◎ ◎ The present invention Gasified Titanium 2 S-8 6 ◎ 1 ◎ J-\ Δ of the present invention Titanium 3 3-8-8 ◎ ◎ 5-13 Titanium oxide 1 T-10 3 〇 ◎ ◎ 5-14 Titanium oxide of the present invention 2 T-10 3 〇 ◎ — 5-15 C 1 f. __^ 匕 Titanium 3 T-10 — ' 3 ◎ ◎ D- 1 Ο 5-17 ~ ^ Titanium 1 匕 Titanium 2 T-10 T-10 6 6 ◎ (Q) ◎ (0) The present invention 5-18 __^ Titanium 3 T-10 6 ◎ ◎ The present invention 5-19 ^化钦1 Α·1 5-20 __ g titanium 2 Α-1 ό 3 〇X Comparative Example 5-21 5-22 5-23 匕Titanium 3 ~ Titanium 1 Α-1 Α-2 3 3 ◎ 〇AX Δ Comparative Example Comparative Example Bud 5-24 匕Titanium 2 1__^匕Titanium 3 Α-2 Α-2 3 3 ◎ ◎ ^ *l〇C Ί7'1 Comparative Example Comparative Example It is understood from Table 5 that the use of the dye of the present invention is improved by 87 201210835 38254pif The concentration of the dye solution, and the initial value of the conversion efficiency is known to be high. This is considered to be because the adsorption of the pigment of titanium oxide is also increased by increasing the concentration of the dye solution. When using a comparative pigment, the initial value of the conversion efficiency is also an acceptable standard. However, when the durability is used, the dye is used in the case of using the comparative dye, and the dye of the present invention exhibits excellent characteristics. [Experiment 6] A coating material of dispersed semiconductor fine particles was prepared using titanium oxide having different particle diameters. Then, a photoelectrochemical cell was fabricated and evaluated for characteristics 〇 [modulation of the coating] (coating 1) and spherical Ti〇2 The particles (anatase type, average particle diameter: 25 nm, hereinafter referred to as spherical Ti〇2 particles 1) were placed in a js bromic acid solution, and the titanium slurry was prepared by scramble. Next, a cellulose-based binder was added to the titanium paste as a tackifier, and kneading was carried out to prepare a coating. (Coating 2) Spherical Ti〇2 particles 1 and spherical Ti〇2 particles (anatase type, average particle diameter: 200 nm, hereinafter referred to as spherical Ti〇2 particles 2) were placed in a nitric acid solution by mixing To prepare the titanium slurry. Next, a cellulose-based binder was added as a tackifier to the titanium mass, and kneading was carried out to prepare a coating (spherical Ti〇2 particle 1: spherical butyrene 2 particle 2 = 30:70). 2 (paint 3)
S 88 201210835 38254pif 在塗料1中’混合棒狀的Ti02粒子(銳鈦礦型、直徑: lOOnm、高寬比:5、以下稱為棒狀Ti02粒子1),以調製棒 狀Ti〇2粒子1的質量:塗料1的質量=1〇 : 90的塗料。 (塗料4) 在塗料1中’混合棒狀的Ti02粒子1,以調製棒狀Ti〇2 粒子1的質量:塗料1的質量=30 : 70的塗料。 (塗料5) 在塗料1中,混合棒狀的Ti02粒子1 ’以調製棒狀Ti〇2 粒子1的質量.塗料1的質量=50 : 50的塗料。 (塗料6) 在塗料1中’混合板狀的雲母粒子(直粒徑·· 10Q nm、 高寬比:6、以下稱為板狀雲母粒子1),以調製板狀雲母粒 子1的質量:塗料1的質量=20 : 80的塗料。 (塗料7) 在塗料1中,混合棒狀的Ti02粒子(銳鈦礦型、直徑: 30 nm、高寬比:6· 3、以下稱為棒狀Ti〇2粒子2),以調製 棒狀Ti〇2粒子2的質量:塗料1的質量=30 : 70的塗料。 (塗料8) 在塗料1中,混合棒狀的Ti〇2粒子(銳鈦礦型 '直徑: 50 nm、高寬比:6. 1、以下稱為棒狀Ti〇2粒子3),以調製 棒狀Ti〇2粒子3的質量:塗料1的質量=30 : 70的塗料。 (塗料9) 在塗料1中,混合棒狀的Ti〇2粒子(銳鈦礦型、直徑: 75 nm、高寬比:5. 8、以下稱為棒狀Ti〇2粒子4),以調製 89 201210835 38254pif 棒狀Ti〇2粒子4的質量:塗料1的質量=30 : 70的塗料。 (塗料10) 在塗料1中’混合棒狀的Ti〇2粒子(銳鈦礦型、直經: 130 nm、高寬比:5. 2、以下稱為棒狀Ti〇2粒子5),以調 製棒狀Ti〇2粒子5的質量:塗料1的質量=30 : 70的塗料°。 (塗料11) 在塗料1中,混合棒狀的Ti〇2粒子(銳鈦礦型、直徑: 180nm、高寬比:5、以下稱為棒狀Ti〇2粒子6),以調製棒 狀Ti〇2粒子6的質量:塗料1的質量=3〇 : 70的塗料。 (塗料12) 在塗料1中,混合棒狀的Ti〇2粒子(銳鈦礦型、直徑: 240 nm、高寬比:5、以下稱為棒狀Ti〇2粒子7),以調製棒 狀Ti〇2粒子7的質量:塗料1的質量=3〇: 70的塗料。 (塗料13) 在塗料1中,混合棒狀的Ti〇2粒子(銳欽礦型、直徑: llOnm、高寬比:4· 1、以下稱為棒狀Ti〇2粒子8),以調製 棒狀Τι〇2粒子8的質量:塗料1的質量=3〇 : 7〇的塗料。 (塗料14) 在塗料1中,混合棒狀的Ti〇2粒子(銳鈦礦型、直徑: 105nm、咼寬比:3.4、以下稱為棒狀Ti〇2粒子9),以調製 棒狀Τι〇2粒子〇的質量:塗料丨的質量=3〇 : 7〇的塗料。 (光電化學電池1) 根據以下所示的順序,製作具有與日本專利特開 2002-289274號公報的圖5記載的光電極12同樣結構的光電 201210835 38254pif 極,然後使用光電極,以製作除了此光電極以外具有與色 素增感太陽電池20同樣結構之ιοχίο mmR寸的光電化學 電池1。 千 準備在玻璃基板上形成有摻雜氟的Sn〇2導電膜(膜厚 :500 nm)的透明電極。 在Sn〇2導電膜上,網版印刷(screen printing)上述的塗 料,然後使其乾燥。之後,在空氣中、45(rc的條件下進行 烘烤。接著,使用塗料4 ’藉由重覆進行網版印刷與烘烤, 而在SnC^f:膜上形成有與上述專利文獻賴5所示半 體電極2同樣結構的半導體電極(受光面的面積: mm、層厚:1() μιη、半導體層的層厚:6叫、光散射層 的層厚:4 μιη、光散射層中含有棒狀叫粒子丨的含二 30質量%) ’然㈣作不含有職色素的光電極。S 88 201210835 38254pif In the coating 1 'mixed rod-shaped TiO 2 particles (anatase type, diameter: lOOnm, aspect ratio: 5, hereinafter referred to as rod-shaped TiO 2 particles 1) to prepare rod-shaped Ti 〇 2 particles 1 Quality: Paint 1 quality = 1 〇: 90 paint. (Coating 4) In the coating material 1, the rod-shaped TiO 2 particles 1 were mixed to prepare a coating of the mass of the rod-shaped Ti 2 particles 1 : the mass of the coating material 1 = 30:70. (Coating material 5) In the coating material 1, the rod-shaped TiO 2 particles 1 ' were mixed to prepare a coating of the mass of the rod-shaped Ti 2 particles 1 and the mass of the coating material 1 = 50:50. (Coating material 6) In the coating material 1, 'the plate-shaped mica particles (straight particle diameter··10Q nm, aspect ratio: 6, or hereinafter referred to as plate-like mica particles 1) are mixed to modulate the mass of the plate-shaped mica particles 1: Paint 1 quality = 20: 80 paint. (Coating material 7) In the coating material 1, rod-shaped TiO 2 particles (anatase type, diameter: 30 nm, aspect ratio: 6.3, hereinafter referred to as rod-shaped Ti 〇 2 particles 2) were mixed to prepare a rod shape. Quality of Ti〇2 particle 2: Coating 1 mass = 30: 70 coating. (Coating 8) In the coating material 1, rod-shaped Ti〇2 particles (anatase type 'diameter: 50 nm, aspect ratio: 6.1, hereinafter referred to as rod-shaped Ti〇2 particles 3) were mixed to prepare The mass of the rod-shaped Ti〇2 particle 3: the mass of the coating 1 = 30: 70 coating. (Coating 9) In the coating material 1, rod-shaped Ti〇2 particles (anatase type, diameter: 75 nm, aspect ratio: 5.8, hereinafter referred to as rod-shaped Ti〇2 particles 4) were mixed to prepare 89 201210835 38254pif Quality of rod-shaped Ti〇2 particles 4: Coating 1 quality = 30: 70 coating. (Coating 10) In the coating 1, 'mixed rod-shaped Ti〇2 particles (anatase type, straight: 130 nm, aspect ratio: 5.2, hereinafter referred to as rod-shaped Ti〇2 particles 5), The mass of the rod-shaped Ti〇2 particles 5 was adjusted: the mass of the coating material = 30: 70 of the coating °. (Coating material 11) In the coating material 1, rod-shaped Ti〇2 particles (anatase type, diameter: 180 nm, aspect ratio: 5, hereinafter referred to as rod-shaped Ti〇2 particles 6) were mixed to prepare a rod-shaped Ti. 〇 2 The quality of the particle 6: the quality of the coating 1 = 3 〇: 70 coating. (Coating material 12) In the coating material 1, rod-shaped Ti〇2 particles (anatase type, diameter: 240 nm, aspect ratio: 5, hereinafter referred to as rod-shaped Ti〇2 particles 7) were mixed to prepare a rod shape. The mass of the Ti〇2 particle 7: the mass of the coating 1 = 3 〇: 70 coating. (Coating material 13) In the coating material 1, a rod-shaped Ti〇2 particle (rear type, diameter: llOnm, aspect ratio: 4.1, hereinafter referred to as rod-shaped Ti〇2 particle 8) was mixed to prepare a rod The quality of the Τι〇2 particle 8: the quality of the coating 1 = 3 〇: 7 〇 of the coating. (Coating material 14) In the coating material 1, rod-shaped Ti〇2 particles (anatase type, diameter: 105 nm, aspect ratio: 3.4, hereinafter referred to as rod-shaped Ti〇2 particles 9) were mixed to prepare a rod-shaped Τι 〇 2 particle 〇 quality: paint 丨 quality = 3 〇: 7 〇 paint. (Photoelectrochemical Cell 1) An electrophotovoltaic 201210835 38254 pif electrode having the same structure as that of the photoelectrode 12 described in FIG. 5 of Japanese Laid-Open Patent Publication No. 2002-289274, and then using a photoelectrode, was fabricated in accordance with the procedure described below. A photoelectrochemical cell 1 having the same structure as the dye-sensitized solar cell 20 is provided in addition to the photoelectrode. A transparent electrode having a fluorine-doped Sn 〇 2 conductive film (film thickness: 500 nm) was prepared on a glass substrate. On the Sn〇2 conductive film, the above coating was screen printed and then dried. Thereafter, baking is performed in the air at 45 (rc conditions. Then, using the coating 4', the screen printing and baking are repeated, and the above-mentioned patent document is formed on the SnC^f: film. The semiconductor electrode of the same structure as the half electrode 2 shown (area of the light-receiving surface: mm, layer thickness: 1 () μιη, layer thickness of the semiconductor layer: 6 Å, layer thickness of the light-scattering layer: 4 μm, in the light-scattering layer It contains two 30% by mass of bar-like particles, and it is used as a photoelectrode that does not contain a pigment.
mol/L 接下來,在半導體電極中,如以下方式吸附色素。首 先,以乙氧化鎂(magnesium eth〇xide)脫水的無水乙醇 溶劑,在其中溶解表6記載的色素的個別濃度成為3祕4 _ 補色素歸。然後,將半導體電極浸潰在上述 Ίγ减在半導體電極中吸附色素的全量則划7 mol/cm ’以完成光電極j〇。 (蘭=厘:有與上述的光電極同樣形狀與大小的鉑電極 的料^⑽議)作為對極’調製含有碘及峨化鐘 的埃系乳化_溶液作為電解f s(:r:Ais:r"^(Dup〇NT)-^- α ryn」),如日本專利特開2002-289274號 91 201210835 38254pif 公報的圖3所示,通過間隔物S使光電極i〇與對極CE為對向 配置,在其内部填充上述的電解質,以完成光電化學電 Ο (光電化學電池2) 半導體電極的製造如以下進行以外,根據與光電化學 電池1同樣順序製作如日本專利特開2002_289274號公報記 載的圖1所示的光電極10,然後製作有如日本專利特開 2002-289274號公報記載的圖3所示的色素增感型太陽電池 20同樣結構的光電化學電池2。 塗料2作為半導體層形成用塗料來使用。然後,在Sn02 導電膜上’網版印刷(screen printing)上述的塗料2,接著使 其乾燥。之後,在空氣中、45〇°c的條件下進行烘烤,以形 成半導體層。 將塗料3作為光散射層的最内部的層形成用塗料來使 用’而且將塗料5作為光散射層的最外部的層形成用塗料來 使用。然後’以與光電化學電池丨同樣作法,在半導體層上 形成光散射層。 接著’在Sn02導電膜上,形成與日本專利特開 2002-289274號公報記载的圖丨所示的半導體電極2有同樣 結構的半導體電極(受光面的面積:1〇 mmxl〇 mm、層厚 :ΙΟμπι、半導體層的層厚:3μιη、最内部的層的層厚:4 μιη、最内部的層中含有的棒狀Ti〇2粒子丨的含有率:1〇質 量%、最外部的層的層厚:3 μιη、最内部的層中含有的棒 狀Ti〇2粒子1的含有率:50質量%),然後製作不含有增感色Mol/L Next, in the semiconductor electrode, the dye was adsorbed as follows. First, the absolute concentration of the pigment described in Table 6 was dissolved in an anhydrous ethanol solvent dehydrated with magnesium eth〇xide to become 3 secrets. Then, the semiconductor electrode was immersed in the above Ίγ minus the total amount of the adsorbed dye in the semiconductor electrode, and 7 mol/cm' was drawn to complete the photoelectrode j〇. (Lan = PCT: a material having a platinum electrode of the same shape and size as the above-mentioned photoelectrode) (10) is used as a counter electrode to prepare an emulsification solution containing iodine and a bismuth clock as electrolysis fs (:r:Ais: r"^(Dup〇NT)-^-α ryn"), as shown in Fig. 3 of Japanese Patent Laid-Open Publication No. 2002-289274, No. 2012-201283835, 38254 pif, the photo electrode i 〇 and the counter electrode CE are paired by the spacer S In the same manner as in the photoelectrochemical cell 1, the photoelectrochemical cell (photoelectrochemical cell 2) is fabricated in the same manner as in the photoelectrochemical cell 1 as described in Japanese Laid-Open Patent Publication No. 2002-289274. The photoelectrode cell 2 of the same configuration as the dye-sensitized solar cell 20 shown in Fig. 3 described in Japanese Laid-Open Patent Publication No. 2002-289274 is produced. The coating material 2 is used as a coating material for forming a semiconductor layer. Then, the above-mentioned coating 2 was screen-printed on a Sn02 conductive film, followed by drying. Thereafter, baking was carried out in the air at 45 ° C to form a semiconductor layer. The coating material 3 was used as the innermost layer forming coating material for the light-scattering layer, and the coating material 5 was used as the outermost layer-forming coating material for the light-scattering layer. Then, a light scattering layer is formed on the semiconductor layer in the same manner as the photoelectrochemical cell. Then, a semiconductor electrode having the same structure as the semiconductor electrode 2 shown in the figure shown in Japanese Patent Laid-Open Publication No. 2002-289274 (the area of the light-receiving surface: 1 〇 mm x l 〇 mm, layer thickness) is formed on the Sn02 conductive film. ΙΟμπι, layer thickness of the semiconductor layer: 3 μm, layer thickness of the innermost layer: 4 μm, content of the rod-shaped Ti〇2 particles contained in the innermost layer: 1% by mass, the outermost layer Layer thickness: 3 μm, content of rod-shaped Ti〇2 particles 1 contained in the innermost layer: 50% by mass), and then produced without containing a sensitizing color
S 201210835 。之後,與光電化學電池1同樣地,通過間隔物 使先電極與_CE躺向配置,在其㈣填充上述的電 解質,以完成光電化學電池2。 (光電化學電池3) 在半導體電極的製造時’除了以塗料丨作為半導體層 形成用塗料來使m料4作為光散射層形成时料來使 用以外’根據與光電化學電池丨同樣順序,製作如日本專利 特開2002-28顚號公報記載_5所示的光電簡,然後 製作有如日本專利特開2〇〇2_289274號公報記載的圖S所示 的光電化學電池20同樣結構的光電化學電池3。 其中’半導體電極為,受光面的面積:1〇mmxl〇mm 層厚.10 μιη、半導體層的層厚:5 、光散射層的層 厚:5μιη、光散射層中含有的棒狀丁吻粒子丨的含有率:3〇 質量%。 (光電化學電池4) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料6作為光散射層形成用塗料來使 用以外,根據與光電化學電池1同樣順序,製作如圖5所示 的光電極10’以及有如日本專利特開2002-289274記載的圖 3所示的光電化學電池20同樣結構的光電化學電池4。其中 ’半導體電極為’受光面的面積:10 mmxl〇 mm、層厚 :10 μιη、半導體層的層厚:6· 5 μιη、光散射層的層厚: 3. 5 μιη、光散射層中含有的板狀的雲母粒子1的含有率: 20質量%。 93 201210835 38254pif (光電化學電池5) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用’以塗料8作為紐射層形成用塗料來使 用以外’根據與光電化學電池1同樣順序來製作光電化學電 池5。其中,半導體電極的光散射層中含有的棒狀Ti〇2粒子 3的含有率:30質量%。 (光電化學電池6) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料9作為光散射層形成用塗料來使 用以外,根據與光電化學電池1同樣順序來製作光電化學電 池6。其中,半導體電極的光散射層中含有的棒狀Ti〇2粒子 4的含有率:30質量%。 (光電化學電池7) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料1〇作為光散射層形成用塗料來 使用以外’根據與光電化學電池丨同樣順序來製作光電化學 電池7。其中,半導體電極的光散射層中含有的棒狀Ti〇2 粒子5的含有率:30質量%。 (光電化學電池8) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料11作為光散射層形成用塗料來 使用以外,根據與光電化學電池丨同樣順序來製作光電化學 電池8。其中,半導體電極的光散射層中含有的棒狀Ti〇2 粒子6的含有率:30質量% ^S 201210835. Thereafter, in the same manner as in the photoelectrochemical cell 1, the precursor electrode and the _CE are placed in a lie, and the above-mentioned electrolyte is filled in (4) to complete the photoelectrochemical cell 2. (Photoelectrochemical cell 3) In the production of a semiconductor electrode, except that the coating material is used as a coating for forming a semiconductor layer, and the material 4 is used as a light-scattering layer, it is used in the same order as in the photoelectrochemical cell. The photoelectrochemical cell 3 having the same structure as that of the photoelectrochemical cell 20 shown in Fig. S described in Japanese Patent Laid-Open Publication No. JP-A No. Hei. No. 2-289274 is described in Japanese Laid-Open Patent Publication No. 2002-28-A. . Wherein the 'semiconductor electrode is: the area of the light-receiving surface: 1 〇 mm x l 〇 mm layer thickness. 10 μιη, the thickness of the semiconductor layer: 5, the layer thickness of the light-scattering layer: 5 μm, and the rod-shaped damming particles contained in the light-scattering layer The content of bismuth: 3 〇 mass%. (Photoelectrochemical cell 4) In the production of the semiconductor electrode, the coating material 2 is used as a coating material for forming a semiconductor layer, and the coating material 6 is used as a coating material for forming a light-scattering layer. The photoelectrode 10' shown in Fig. 5 and the photoelectrochemical cell 4 having the same structure as the photoelectrochemical cell 20 shown in Fig. 3 described in Japanese Patent Laid-Open Publication No. 2002-289274. Wherein the area of the semiconductor electrode is the light-receiving surface: 10 mm×l〇mm, the layer thickness: 10 μm, the layer thickness of the semiconductor layer: 6.5 μm, and the layer thickness of the light-scattering layer: 3. 5 μm, and the light-scattering layer contains The content of the plate-like mica particles 1 is 20% by mass. 93 201210835 38254pif (photoelectrochemical cell 5) In the production of the semiconductor electrode, the coating material 2 is used as a coating for forming a semiconductor layer, and the coating material 8 is used as a coating for forming a layer. The photoelectrochemical cell 5 is fabricated in sequence. The content ratio of the rod-shaped Ti〇2 particles 3 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. (Photoelectrochemical cell 6) In the production of the semiconductor electrode, the coating material 2 is used as a coating material for forming a semiconductor layer, and the coating material 9 is used as a coating material for forming a light-scattering layer, and is produced in the same order as the photoelectrochemical cell 1. Photoelectrochemical cell 6. The content ratio of the rod-shaped Ti〇2 particles 4 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. (Photoelectrochemical cell 7) In the production of a semiconductor electrode, the coating material 2 is used as a coating material for forming a semiconductor layer, and the coating material 1 is used as a coating material for forming a light-scattering layer. A photoelectrochemical cell 7 was fabricated. The content ratio of the rod-shaped Ti〇2 particles 5 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. (Photoelectrochemical cell 8) In the production of a semiconductor electrode, the coating material 2 is used as a coating material for forming a semiconductor layer, and the coating material 11 is used as a coating material for forming a light-scattering layer, and is produced in the same order as the photoelectrochemical cell. Photoelectrochemical cell 8. The content of the rod-shaped Ti〇2 particles 6 contained in the light-scattering layer of the semiconductor electrode: 30% by mass ^
94 S 201210835 38254pif (光電化學電池9) 在半導體電極的製造時、除了以塗料2作為半導體層 形成用塗料來使用,以塗料13作為光散射層形成用塗料來 使用以外,根據與光電化學電池1同樣順序來製作光電化學 電池9。其中,半導體電極的光散射層中含有的棒狀Ti02 粒子8的含有率:30質量%。 (光電化學電池10) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料14作為光散射層形成用塗料來 使用以外,根據與光電化學電池1同樣順序來製作光電化學 電池10。其中’半導體電極的光散射層中含有的棒狀Ti〇2 粒子9的含有率:30質量%。 (光電化學電池11) 在半導體電極的製造時,除了僅使用塗料2製作僅由 半導體層形成的半導體電極(受光面的面積:10 mmxl〇 mm、層厚:10 μιη)以外’根據與光電化學電池1同樣順序 來製作光電化學電池11。 (光電化學電池12) 在半導體電極的製造時,除了以塗料2作為半導體層 形成用塗料來使用,以塗料7作為光散射層形成用塗枓來使 用以外,根據與光電化學電池1同樣順序來製作光電化學電 池12。其中,半導體電極的光散射層中含有的棒狀们〇2粒 子2的含有率:30質量%。 [特性的試驗及評價] 95 201210835 38254pif 關於光電化學電池1〜12,使用太陽光模擬器(solar simulator)(WACOM製造、WXS-85H(商品名)),照射由通 過AM1. 5濾光片的來自於氙燈的1〇〇〇 W/m2的類似太陽光 。使用I-V測試測定電流-電壓特性,以求得轉換效率的初 期值。上述的結果表示於表6。 轉換效率為2. 5%以上者以◎表示,1%以上、不到2. 5% 者以〇表示,0. 3%以上、不到1%者以△表示,不到〇. 者 以X表示,而轉換效率為〇· 3%以上者合格,不到〇· 3%者不合 格。另外,相對轉換效率的初期值,5〇〇小時後的轉換效率 ,90%以上者評價為◎,6〇%以上、不到9〇%者評價為〇 ,40%以上、不到60%者評價為△,不到4〇%者評價為父, 上述的結果表示於表6。相對轉換效率的初期值 ,500小時 <的轉換效率細上者合格,不到_者不合格。94 S 201210835 38254pif (photoelectrochemical cell 9) In the production of a semiconductor electrode, the coating material 13 is used as a coating material for forming a semiconductor layer, and the coating material 13 is used as a coating material for forming a light-scattering layer, and the photoelectrochemical cell 1 is used. The photoelectrochemical cell 9 was fabricated in the same order. The content ratio of the rod-shaped TiO 2 particles 8 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. (Photoelectrochemical cell 10) In the production of the semiconductor electrode, the coating material 2 is used as a coating material for forming a semiconductor layer, and the coating material 14 is used as a coating material for forming a light-scattering layer, and is produced in the same order as the photoelectrochemical cell 1. Photoelectrochemical cell 10. The content ratio of the rod-shaped Ti〇2 particles 9 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. (Photoelectrochemical Cell 11) In the production of a semiconductor electrode, except for the use of the coating material 2, a semiconductor electrode formed of only a semiconductor layer (area of the light-receiving surface: 10 mm×10 mm, layer thickness: 10 μm) was used. The battery 1 is fabricated in the same order as the photoelectrochemical cell 11. (Photoelectrochemical cell 12) In the production of the semiconductor electrode, the coating material 2 is used as a coating for forming a semiconductor layer, and the coating material 7 is used as a coating for forming a light-scattering layer. A photoelectrochemical cell 12 is fabricated. The content ratio of the rod-like particles 2 contained in the light-scattering layer of the semiconductor electrode was 30% by mass. [Test and evaluation of characteristics] 95 201210835 38254pif For the photoelectrochemical cells 1 to 12, a solar simulator (manufactured by WACOM, WXS-85H (trade name)) was used, and the illumination was passed through an AM 1.5 filter. 1 〇〇〇W/m2 of sunlight similar to the xenon lamp. The current-voltage characteristics were measured using an I-V test to obtain an initial value of the conversion efficiency. The above results are shown in Table 6. The conversion efficiency is 2.5% or more, expressed as ◎, 1% or more, less than 2.5%, expressed as ,, 0.3% or more, less than 1%, expressed as △, less than 〇. It is indicated that the conversion efficiency is 〇·3% or more, and less than 〇·3% is unqualified. In addition, the initial conversion value of the conversion efficiency is 90% or more, and the evaluation is ◎, and 6% or more and less than 9% are evaluated as 〇, 40% or more, and less than 60%. The evaluation was Δ, and less than 4% was evaluated as the parent, and the above results are shown in Table 6. The initial value of the relative conversion efficiency is 500 hrs. The conversion efficiency is fine, and less than _ is unqualified.
S 201210835 38254pif 表6 試料號碼 光電化學電池 色素 轉換效率 耐久性 備註 6-1 光電化學電池1 S-15 〇 〇 本發明 6-2 光電化學電池2 S-15 ◎ 〇 本發明 6-3 光電化學電池3 S-15 ◎ 〇 本發明 6-4 光電化學電池4 S-15 ◎ ◎ 本發明 6-5 光電化學電池5 S-15 〇 ◎ 本發明 6-6 光電化學電池6 S-15 〇 〇 本發明 6-7 光電化學電池7 S-15 ◎ 〇 本發明 6-8 光電化學電池8 S-15 ◎ ◎ 本發明 6-9 光電化學電池9 S-15 ◎ 〇 本發明 6-10 光電化學電池10 S-15 ◎ ◎ 本發明 6-11 光電化學電池1 T-6 〇 ◎ 本發明 6-12 光電化學電池2 T-6 ◎ ◎ 本發明 6-13 光電化學電池3 T-6 ◎ ◎ 本發明 6-14 光電化學電池4 T-6 ◎ ◎ 本發明 6-15 光電化學電池5 T-6 〇 ◎ 本發明 6-16 光電化學電池6 T-6 〇 ◎ 本發明 6-17 光電化學電池7 T-6 ◎ ◎ 本發明 6-18 光電化學電池8 T-6 ◎ ◎ 本發明 6-19 光電化學電池9 T-6 ◎ ◎ 本發明 6-20 光電化學電池10 T-6 ◎ ◎ 本發明 6-21 光電化學電池1 A-1 〇 Δ 比較例 6-22 光電化學電池2 A-1 〇 △ 比較例 6-23 光電化學電池3 A-1 ◎ △ 比較例 6-24 光電化學電池4 A-1 ◎ Δ 比較例 6-25 光電化學電池5 A-1 〇 Δ 比較例 6-26 光電化學電池6 A-1 〇 Δ 比較例 6-27 光電化學電池7 A-1 ◎ X 比較例 6-28 光電化學電池8 A-1 ◎ Δ 比較例 6-29 光電化學電池9 A-1 ◎ Δ 比較例 6-30 光電化學電池10 A-1 ◎ Δ 比較例 6-31 光電化學電池11 A-1 Δ X 比較例 6-32 光電化學電池12 A-1 Δ X 比較例 由表6可知,使用本發明的色素的光電化學電池,轉 換效率的初期值為1%以上,而且經過500小時後的轉換效率 97 201210835 38254pif 為初期值的60%以上,且表示出優異的耐久性。 相對上述,得知使用比較色素的情況下,轉換效率的 初期值為合格標準,但在耐久性上有問題。 [實驗7] 在導電性基板上塗佈於金屬氧化物微粒子中加入金 屬烷氧化物的漿料狀物,然後進行UV臭氧照射、uv照射 或乾燥,以製作電極。接著,製作光電化學電池,並^測 定轉換效率。 ' (金屬氧化物微粒子) 使用氧化欽作為金屬氧化物微粒子,而氧化欽是使用 質量比30%金紅礦型及70%銳鈦礦型、平均粒徑25nm的p25 粉末(Deguss公司製造、商品名)。 (金屬氧化物微粒子粉末的前處理) 利用預先熱處理金屬氧化物微粒子,以去除表面的有 機物與水分。氧化鈦微粒子的情況,則是以450¾的烘箱, 在大氣下,加熱30分鐘。 (金屬氧化物微粒子中含有的水分量的測定) 將保存在溫度26 C、濕度72%的環境的氧化鈦、P25 粉末(Deguss公司製造、商品名)中含有的水分量,可利用 熱重量測定時重量減少,及在300°C加熱時脫去的水分量的 卡式滴定(Karl Fischer titration)來定量。 將氧化鈦、P25粉末(Deguss公司製造、商品名)在3〇〇 °C加熱時脫去的水分量利用卡式滴定(Karl Fischer titration)來定量時,〇·1〇33 g的氧化鈦微粉末中含有0.253S 201210835 38254pif Table 6 Sample No. Photoelectrochemical Cell Pigment Conversion Efficiency Durability Remarks 6-1 Photoelectrochemical Cell 1 S-15 〇〇Inventive 6-2 Photoelectrochemical Cell 2 S-15 ◎ 〇Inventive 6-3 Photoelectrochemical Cell 3 S-15 ◎ 〇 6-4 photoelectrochemical cell of the invention 4 S-15 ◎ ◎ 6-5 photoelectrochemical cell of the invention 5 S-15 〇 ◎ 6-6 photoelectrochemical cell of the invention 6 S-15 〇〇 the invention 6-7 Photoelectrochemical cell 7 S-15 ◎ 〇 6-8 photoelectrochemical cell of the invention 8 S-15 ◎ ◎ 6-9 photoelectrochemical cell of the invention 9 S-15 ◎ 〇 6-10 photoelectrochemical cell of the invention 10 S -15 ◎ ◎ 6-11 Photoelectrochemical cell of the invention 1 T-6 〇 ◎ 6-12 photoelectrochemical cell 2-6 of the invention ◎ ◎ 6-13 photoelectrochemical cell 3-6 of the invention ◎ ◎ 6- 14 Photoelectrochemical cell 4 T-6 ◎ ◎ 6-15 photoelectrochemical cell of the invention 5 T-6 〇 ◎ 6-16 photoelectrochemical cell of the invention 6 T-6 〇 ◎ 6-17 photoelectrochemical cell of the invention 7 T-6 ◎ ◎ 6-18 photoelectrochemical cell of the invention 8 T-6 ◎ ◎ 6-19 photoelectrochemical cell of the invention 9 T-6 ◎ ◎ Invention 6-20 Photoelectrochemical cell 10 T-6 ◎ ◎ 6-21 Photoelectrochemical cell of the invention 1 A-1 〇 Δ Comparative Example 6-22 Photoelectrochemical cell 2 A-1 〇 △ Comparative Example 6-23 Photoelectrochemical cell 3 A-1 ◎ △ Comparative Example 6-24 Photoelectrochemical cell 4 A-1 ◎ Δ Comparative Example 6-25 Photoelectrochemical cell 5 A-1 〇Δ Comparative Example 6-26 Photoelectrochemical cell 6 A-1 〇Δ Comparative Example 6 -27 Photoelectrochemical cell 7 A-1 ◎ X Comparative Example 6-28 Photoelectrochemical cell 8 A-1 ◎ Δ Comparative Example 6-29 Photoelectrochemical cell 9 A-1 ◎ Δ Comparative Example 6-30 Photoelectrochemical cell 10 A- 1 ◎ Δ Comparative Example 6-31 Photoelectrochemical cell 11 A-1 Δ X Comparative Example 6-32 Photoelectrochemical cell 12 A-1 Δ X Comparative Example From Table 6, it is understood that the photoelectrochemical cell using the pigment of the present invention has conversion efficiency. The initial value of the initial value is 1% or more, and the conversion efficiency after the passage of 500 hours is 201210835 38254pif, which is 60% or more of the initial value, and shows excellent durability. As described above, when the comparative coloring matter is used, the initial value of the conversion efficiency is an acceptable standard, but there is a problem in durability. [Experiment 7] A slurry of a metal alkoxide was added to a metal oxide fine particle coated on a conductive substrate, followed by UV ozone irradiation, uv irradiation or drying to prepare an electrode. Next, a photoelectrochemical cell was fabricated and the conversion efficiency was measured. '(Metal oxide fine particles) oxidized chin as a metal oxide fine particle, and oxidized chin is a p25 powder (manufactured by Deguss Co., Ltd.) having a mass ratio of 30% gold red ore and 70% anatase type and an average particle diameter of 25 nm. name). (Pretreatment of Metal Oxide Fine Particles) The metal oxide fine particles are heat-treated in advance to remove organic substances and moisture on the surface. In the case of titanium oxide fine particles, it was heated in an oven at a temperature of 303⁄4 for 30 minutes. (Measurement of the amount of water contained in the metal oxide fine particles) The amount of water contained in the titanium oxide and P25 powder (manufactured by Deguss Co., Ltd.) stored in an environment having a temperature of 26 C and a humidity of 72% can be measured by thermogravimetry. The weight was reduced, and the Karl Fischer titration of the amount of water removed at 300 ° C was used for quantification. When the amount of water removed by heating the titanium oxide or P25 powder (manufactured by Deguss Co., Ltd., trade name) at 3 ° C is quantified by Karl Fischer titration, 氧化钛·〇33 g of titanium oxide micro The powder contains 0.253
S 201210835 38254pif mg的水。亦即是’氧化鈦微粉末含有約2. 5質量%的水分。 在30分鐘熱處理、冷卻後,保存在乾燥器中來使用。 (金屬烷氧化物塗料的調製) 結合金屬氧化物微粒子的作用的金屬烷氧化物分別 使用四異丙氧化欽(IV)(titanium (IV) tetraisopropoxide, TTIP)作為鈦原料、四正丙氧化錯(IV) (zirc〇nium (IV) tetra n-propoxide)作為鍅原料、五乙氧化鈮(v)(ni〇bium (v) pentaethoxide)作為鈮原料(全部是a丨dr丨ch公司製造)。 以利用金屬烷氡化物的加水分解所產生的非晶質層 不過度厚,且粒子彼此的鍵結充分進行的方式,金屬氧化 物微粒子與金屬烷氧化物的莫耳濃度比根據金屬氧化物微 粒子徑而做適當地調節。再者,金屬烷氧化物全作為〇. i M 的乙醇溶液。在混合氧化物鈦微粒子與四異丙基化鈦 (ινχττιρ)的情況時,相對於氧化物鈦微粒子丨g,混合3.55 g的0.1 Μ TTIP溶液。此時,所得到的塗料中的氧化鈦濃度 約22質量%,成為在塗佈上適當的黏度。另外,此時的氧 化鈦與ττιρ與乙醇的以質量比計: 〇· 127:3 42,以莫 耳比計為 1 : 〇. 036 : 5. 92。 同樣地,關於氧化鈦微粒子與TTIP以外的烷氧化物的 混合塗料,亦調製成微粒子濃度為22質量%,而使用氧化鋅 與氧化錫的塗料則為16質量%。氧化鋅與氧化錫的情況下, 以相對於金屬氧化物微粒子丨g金屬烧氧化物溶液5 呂 的比例進行混合。 接著,將金屬氧化物微粒子與金屬貌氧化物溶液置於 99 201210835 38254pif 密閉谷器中’利用磁力授拌器(magnetic stirrer)擾拌2小時 ,以得到均勻的塗料。導電性基板上的塗料的塗佈方法: 可使用到刀成膜法(doctor blade method)、網版印刷法、嘴 霧塗佈法等’適當的塗料黏度為根據塗佈方法做適當選擇 。在此是使用簡便的玻璃棒塗佈方法(與刮刀成膜法類似) 。在此情況下,給予適當的塗料黏度的金屬氧化物微粒子 的濃度大概在5質量%〜30質量%的範圍。 以分解金屬烷氧化物而生成的非晶質金屬氧化物的 厚度’在本發明是〇. 1〜〇. 6 nm左右的範圍,而其可作反 適合的厚度。 ' (導電性基板上的塗料的塗佈與風乾處理) 在配置有銦錫氧化物(ITO)導電膜的聚對苯二曱酸乙 二酯(PET)膜基板(20 Ω/cm2),或配置有氟摻雜氧^錫 (FTO)導電膜的玻璃基板(1〇 Q/crn2)上,將黏著膠帶2牧以 一定間隔平行黏貼以作為間隔物’然後使用玻璃棒將按照 上述的方法調製的塗料均勻塗佈。 … 在塗佈塗料後、色素吸附前’改變關於有&uv臭氧 處理、UV照射處理或乾燥處理的條件,以製作多孔質膜。 (乾燥處理) ' 將塗佈至導電性基板後的膜在空氣中且室溫中風乾 約兩分鐘。在此過程中,塗料中的金屬烷氧化合物由於= 氣中的水分而受到加水分解,而自Ti烷氧化合物、Zr烧氧 化合物、Nb烧氧化合物分別形成非晶質的氧化欽、氧化夢 、氧化鈮。 β 201210835. (uv臭氧處理) 臭氧處理是使用日本laser電子公司製造的 NL_UV253 UV臭氧清洗裝置。uv光源為設置有具有185 nm與254 nm輝線的4·5 W水銀燈3個,而試料為距光源約 6. 5 cm的距離處水平配置。然後,在腔室中利用 導入氧氣氣流以產生臭氧。在本實例中,是進行2小時的 uv臭氧處理。然而’以上述的uv臭氧處理的IT〇膜&FT〇 膜的導電性的降低,全都不會被看見。 (UV處理) 除了在腔室中以氮氣取代來進行處理以外,同樣地與 上述UV臭氧處理相同,進行2小時的處理。以上述的uv處 理的IT0膜及FT0膜的導電性的降低,全都不會被看見。 (色素吸附) 色素為使用表7記載的色素,並調製各色素的〇 5mM 的乙醇溶液。本實驗中,將以上述製程製作的多孔質膜在 100 C的烘箱乾燥1小時後,浸潰於增感色素的溶液中,然 後直接在室溫下放置5〇分鐘,以在氧化鈦表面上吸附色素 。之後,將色素吸附後的試料以乙醇清洗,並風乾。 (光電化學電池的製作與電池特性評價) 將形成有色素吸附後的多孔質膜的導電性基板作為 光電極’而其與利用濺鐘將姑微粒子修飾過的ΙΤο/ρΕτ膜 或FT0/玻璃對極為對向配置,以試做光電化學電池。上述 光電極的有效面積約0.2 cm2^電解質溶液為使用含有〇 5 Μ的Lil、〇.〇5 Μ的I及〇.5 M的第三丁基呲啶的3_曱氧基 101 201210835 38254pif 丙腈(3-11161:11(^口1*(^〇11如16),並利用毛管現象導入至兩電 極間的縫隙。 根據以一定光子數(1〇16 cm2)照射下的電流作用光譜 測定,以及用AM1. 5類似太陽光(100 mW/cm2)照射下的I-V 測定來進行電池性能的評價。上述的測定是使用分光計器 公司製造的CEP-2000型分光感度測定裝置,而所得到的轉 換效率表示於表7中。 轉換效率為2.0%以上者以◎表示,〇·8%以上、不到 2.0%者以〇表示,0.3%以上、不到〇.8%者以△表示,不 到0.3%者以X表示,而轉換效率為〇 3%以上者合格,不到 1=不合格。另外,相對轉換效率的初期值,_、時後 ΓΓί者評價為◎,咖上、不到· 者科為〇,概以上、不到_者 評價為X,上述的值作為耐久性表示於 不 小時後的轉換效率為_以上者:ί 102 201210835f 表Ί 試料 號碼 基板 氧化 欽前 處理 色 素 UV 臭氧 UV 乾 燥 轉換 效率 耐久 性 備註 7-1 FTO/玻璃 有 S-16 〇 X 〇 ◎ ◎ 本發明 7-2 FTO/玻璃 有 S-16 X 〇 〇 ◎ 〇 本發明 7-3 FTO/玻璃 有 S-16 X X 〇 〇 〇 本發明 7-4 FTO/玻璃 有 S-16 X X X 〇 〇 本發明 7-5 FTO/玻璃 無 S-16 X X 〇 〇 〇 本發明 7-6 FTO/玻璃 有 S-16 〇 X 〇 〇 〇 本發明 7-7 ITO/PET 有 S-16 〇 X 〇 ◎ 〇 本發明 7-8 ITO/PET 有 S-16 X X 〇 〇 〇 本發明 7-9 FTO/玻璃 有 T-24 〇 X 〇 ◎ ◎ 本發明 7-10 FTO/玻璃 有 T-24 X 〇 〇 ◎ ◎ 本發明 7-11 FTO/玻璃 有 T-24 X X 〇 〇 ◎ 本發明 7-12 FTO/玻璃 有 T-24 X X X 〇 〇 本發明 7-13 FTO/玻璃 無 T-24 X X 〇 〇 〇 本發明 7-14 FTO/玻璃 有 T-24 〇 X 〇 〇 〇 本發明 7-15 ITO/PET 有 T-24 〇 X 〇 ◎ 〇 本發明 7-16 ITO/PET 有 T-24 X X 〇 〇 〇 本發明 7-17 FTO/玻璃 有 A-2 〇 X 〇 ◎ △ 比較例 7-18 FTO/玻璃 有 A-2 X 〇 〇 〇 X 比較例 7-19 FTO/玻璃 有 A-2 X X 〇 〇 X 比較例 7-20 FTO/玻璃 有 A-2 X X X 〇 X 比較例 7-21 FTO/玻璃 無 A-2 X X 〇 〇 X 比較例 7-22 FTO/玻璃 有 A-2 〇 X 〇 〇 X t匕較例 7-23 ITO/PET 有 A-2 〇 X 〇 ◎ Δ 比較例 7-24 ITO/PET 有 A-2 X X 〇 〇 X 比較例 在表7中,「UV臭氧」、「UV」、「乾燥」的欄位分 別表示為,在多孔質膜的形成後、增感色素吸附前,有無 UV臭氧處理、UV照射處理、乾燥處理。已處理者為「〇 」,未處理者為「X」。 表7的「Ti〇2的前處理」的攔位表示為,有無氧化鈦 103 201210835 38254pif 微粒子的前處理(在450°C的烘箱中進行30分鐘熱處理)。試 料6、14、22表示為使用高TTIP濃度(氧化鈦:TTIP的莫耳 比為1 : 0· 356)的塗料的試料,而其他的試料(試料1〜5、7 〜13、23、24)全部為使用氧化鈦:ΤΤΙΡ=1 : 〇. 0356的塗 料。 由表7可知,使用本發明的色素的光電化學電池,在 多孔質膜的形成後、增感色素吸附前,不管有無υν臭氧處 理、UV照射處理、乾燥處理,比起當單獨使用上述色素的 情況下,通常光電化學電池的轉換效率高、且可得到合格 標準的轉換效率。而且,經過500小時後的轉換效率為初期 值的60%以上,且表示出優異的耐久性。 相對上述,得知使用比較色素的情況下,轉換效率的 初期值為合格標準,但在耐久性上有問題。 [實驗8] 使用乙腈作為溶劑,溶解碘化鋰〇. lm〇1/L、碘〇 〇5 mol/L、埃化二甲基丙基咪唑〇.62mol/L ’以調製電解質溶 液。於此以濃度分別成為0.5 m〇l/L的方式個別添加並溶解 下述所示的No. 1〜n〇.8的聚苯并咪唑系化合物。S 201210835 38254pif mg of water. 5质量百分比的含水。 The titanium oxide micropowder containing about 2. 5 mass% of water. After heat treatment and cooling for 30 minutes, it was stored in a desiccator for use. (Preparation of metal alkoxide coating) The metal alkoxide which binds the action of the metal oxide microparticles uses titanium (IV) tetraisopropoxide (TTIP) as a titanium raw material and tetra-n-propoxygenation ( IV) (zirc〇nium (IV) tetra n-propoxide) is used as a raw material for bismuth, and nibium (v) pentaethoxide is used as a raw material for bismuth (all manufactured by a丨dr丨ch). The molar concentration ratio of the metal oxide fine particles to the metal alkoxide is based on the metal oxide fine particles in such a manner that the amorphous layer produced by the hydrolysis of the metal alkoxide is not excessively thick and the bonding of the particles is sufficiently performed. Make appropriate adjustments to the path. Further, the metal alkoxide is used as a solution of 〇. i M in ethanol. In the case of mixing oxide titanium fine particles with titanium tetraisopropylate (ινχττιρ), 3.55 g of a 0.1 Μ TTIP solution was mixed with respect to the oxide titanium fine particles 丨g. At this time, the concentration of the titanium oxide in the obtained coating material was about 22% by mass, and the viscosity was appropriately applied to the coating. Further, the mass ratio of titanium oxide to ττιρ to ethanol at this time is 〇·127:3 42, and the molar ratio is 1 : 〇. 036 : 5. 92. Similarly, the mixed coating of the titanium oxide fine particles and the alkoxide other than TTIP was also prepared so that the fine particle concentration was 22% by mass, and the coating using zinc oxide and tin oxide was 16% by mass. In the case of zinc oxide and tin oxide, it is mixed at a ratio of 5 Å of the metal oxide oxide solution to the metal oxide fine particles. Next, the metal oxide microparticles and the metal oxide oxide solution were placed in a 99 201210835 38254pif closed grain oven, and the magnetic stirrer was used to scramble for 2 hours to obtain a uniform coating. The coating method of the coating material on the conductive substrate: a doctor blade method, a screen printing method, a nozzle coating method, or the like can be used. The appropriate coating viscosity is appropriately selected according to the coating method. Here, it is a simple glass rod coating method (similar to the blade forming method). In this case, the concentration of the metal oxide fine particles to which the appropriate coating viscosity is applied is approximately in the range of 5 mass% to 30 mass%. The thickness of the amorphous metal oxide formed by decomposing the metal alkoxide is in the range of about 1 nm to about 6 nm in the present invention, and it can be used as an inversely suitable thickness. '(Coating and air drying treatment of the coating on the conductive substrate) A polyethylene terephthalate (PET) film substrate (20 Ω/cm 2 ) in which an indium tin oxide (ITO) conductive film is disposed, or On a glass substrate (1〇Q/crn2) equipped with a fluorine-doped oxygen-tin (FTO) conductive film, the adhesive tape 2 is affixed in parallel at regular intervals to serve as a spacer, and then the glass rod is used to prepare according to the above method. The coating is evenly coated. The conditions for the &uv ozone treatment, the UV irradiation treatment or the drying treatment are changed after the application of the coating material and before the dye adsorption to prepare a porous membrane. (Drying treatment) ' The film applied to the conductive substrate was air-dried at room temperature for about two minutes. In this process, the metal alkoxide in the coating is hydrolyzed by the water in the gas, and the amorphous oxide, oxidized dream is formed from the Ti alkoxide, the Zr alkoxide, and the Nb alkoxide. , yttrium oxide. β 201210835. (uv ozone treatment) The ozone treatment is an NL_UV253 UV ozone cleaning device manufactured by Laser Electronics, Japan. The uv light source is provided with three 4·5 W mercury lamps having 185 nm and 254 nm glow lines, and the sample is horizontally disposed at a distance of about 6.5 cm from the light source. Then, an oxygen gas flow is introduced in the chamber to generate ozone. In this example, uv ozone treatment was carried out for 2 hours. However, the decrease in the electrical conductivity of the IT film & FT film treated with the above uv ozone was not observed. (UV treatment) The treatment was carried out for 2 hours in the same manner as in the above-described UV ozone treatment except that the treatment was carried out by substituting nitrogen gas in the chamber. The decrease in the electrical conductivity of the IVO film and the FT0 film treated by the above uv was not observed. (Pigment adsorption) The dyes were prepared by using the dyes described in Table 7 and preparing a 5 mM ethanol solution of each pigment. In this experiment, the porous film prepared by the above process was dried in a 100 C oven for 1 hour, then immersed in a solution of the sensitizing dye, and then left at room temperature for 5 minutes to be on the surface of the titanium oxide. Adsorption of pigments. Thereafter, the sample after the dye adsorption was washed with ethanol and air-dried. (Production of Photoelectrochemical Cell and Evaluation of Battery Characteristics) A conductive substrate on which a porous film after dye adsorption was formed was used as a photoelectrode', and a ΙΤο/ρΕτ film or an FT0/glass pair modified with a squirting clock. Extremely opposite configuration to try out photoelectrochemical cells. The effective area of the above photoelectrode is about 0.2 cm2. The electrolyte solution is 3 曱 methoxy 101 using 10 Μ 5 Μ Lil, 〇. 〇 5 Μ I and 5 5 M butyl acridine 101 201210835 38254pif C Nitrile (3-11161:11 (^口1*(^〇11如16), and is introduced into the gap between the two electrodes by capillary phenomenon. According to the current action spectrum measurement under a certain number of photons (1〇16 cm2) And the battery performance was evaluated by IV measurement under irradiation of AM 1.5 (100 mW/cm 2 ). The above measurement was performed using a CEP-2000 spectrophotometric measuring device manufactured by Spectrometer Co., Ltd. The conversion efficiency is shown in Table 7. The conversion efficiency is 2.0% or more, which is represented by ◎, 〇·8% or more, less than 2.0%, which is represented by ,, 0.3% or more, less than 8%.8%, which is represented by Δ, To 0.3%, it is represented by X, and the conversion efficiency is 3% or more, and less than 1 = unqualified. In addition, the initial value of relative conversion efficiency, _, and later 评价 评价 is evaluated as ◎, coffee, less than · The subject is 〇, the above is less than _, the evaluation is X, and the above values are expressed as durability after hours. The conversion efficiency is _ or more: ί 102 201210835f Ί Sample No. Substrate Oxidation Pretreatment Color UV Ozone UV Drying Conversion Efficiency Durability Remarks 7-1 FTO/Glass has S-16 〇X 〇◎ ◎ 7-2 FTO of the present invention /glass has S-16 X 〇〇◎ 〇7-3 FTO/glass has S-16 XX 〇〇〇7-4 FTO/glass has S-16 XXX 〇〇7-5 FTO/glass of the invention No S-16 XX 〇〇〇This invention 7-6 FTO/glass has S-16 〇X 〇〇〇This invention 7-7 ITO/PET has S-16 〇X 〇◎ 〇This invention 7-8 ITO/PET There are S-16 XX 〇〇〇 The present invention 7-9 FTO/glass has T-24 〇X 〇 ◎ ◎ The present invention 7-10 FTO/glass has T-24 X 〇〇 ◎ ◎ 7-11 FTO/glass of the present invention There are T-24 XX 〇〇 ◎ The invention 7-12 FTO / glass has T-24 XXX 〇〇 The invention 7-13 FTO / glass without T-24 XX 〇〇〇 The invention 7-14 FTO / glass has T- 24 〇X 〇〇〇The present invention 7-15 ITO/PET has T-24 〇X 〇◎ 〇7-16 ITO/PET has T-24 XX 〇〇〇This invention 7-17 FTO/glass has A -2 〇X 〇◎ △ Comparative Example 7-18 FTO/glass has A-2 X 〇〇〇X Comparative Example 7-19 FTO/glass has A-2 XX 〇〇X Comparative Example 7-20 FTO/glass has A -2 XXX 〇X Comparative Example 7-21 FTO/Glass without A-2 XX 〇〇X Comparative Example 7-22 FTO/Glass has A-2 〇X 〇〇X t匕Comparative Example 7-23 ITO/PET A -2 〇X 〇◎ Δ Comparative Example 7-24 ITO/PET A-2 XX 〇〇X Comparative Example In Table 7, the fields of "UV ozone", "UV", and "dry" are indicated as After the formation of the porous membrane and before the adsorption of the sensitizing dye, there is no UV ozone treatment, UV irradiation treatment, or drying treatment. The processed person is "〇" and the unprocessed person is "X". The "pretreatment of Ti〇2" in Table 7 is indicated by the presence or absence of pretreatment of titanium oxide 103 201210835 38254pif microparticles (heat treatment in an oven at 450 ° C for 30 minutes). Samples 6, 14, and 22 are shown as samples using a coating having a high TTIP concentration (titanium oxide: TTIP molar ratio of 1:0·356), and other samples (samples 1 to 5, 7 to 13, 23, 24) All are coatings using titanium oxide: ΤΤΙΡ = 1: 〇. 0356. As is clear from Table 7, in the photoelectrochemical cell using the dye of the present invention, the presence or absence of υν ozone treatment, UV irradiation treatment, and drying treatment after the formation of the porous membrane and before the adsorption of the sensitizing dye is compared with the use of the above-mentioned pigment alone. In the case, the conversion efficiency of the photoelectrochemical cell is generally high, and the conversion efficiency of an acceptable standard can be obtained. Further, the conversion efficiency after 500 hours passed was 60% or more of the initial value, and showed excellent durability. As described above, when the comparative coloring matter is used, the initial value of the conversion efficiency is an acceptable standard, but there is a problem in durability. [Experiment 8] Using acetonitrile as a solvent, lithium iodide 〇. lm 〇 1 / L, iodonium 〇 5 mol / L, dimethyl propyl methacrylate, 62 mol / L ' was dissolved to prepare an electrolyte solution. Here, the polybenzimidazole-based compound of No. 1 to n〇.8 shown below was separately added and dissolved so as to have a concentration of 0.5 m〇l/L.
104 S 201210835 38254pif [化 48] N〇·1104 S 201210835 38254pif [化 48] N〇·1
No.2No.2
OH OH No. 3 ίΡ^OH OH No. 3 ίΡ^
OHOH
No.4No.4
PHPH
No. 5No. 5
No.6No.6
No. 7No. 7
No.8 OC^CHo 在導電性破璃上之承載表8記載的色素的多孔 鈦半導體薄膜(厚度15㈣上,滴人Nq1〜版8的 味嗤系化合物電解f。紐,纽裝躲乙_製的框 (frame type)間隔物(厚度25㈣,接著覆蓋鱗電極, 製作光電轉換元件。 在所得,的光電轉換元件上,照射賤 剛讀W的光,而得到的開放電壓與光電 示在表8中。 、干 (結果的評價) W開放電壓為7.0 V#上者以◎表示 不到以0表示,6.GV以上、不到_者:^ 不i6. 0 V者以x表示,而6 5 v以上者合格。 ⑻轉換效率為2. 〇%以上者以 到2.0%者以〇表示,^伙·、,L u.w以上、y U表不’ 〇·3%以上、不職8%者以△表示 105 201210835 . 不到〇· 3%者以X表示,而轉換钕查去Λ 尤从μ严羊為。.3%以上者合格’不到 〇· 3/。者不&格。另外,相對轉換效率的初期值,_小時後 的轉換效率,観以上者評價為◎,_以上、不到· 者評價為Ο,以上、不聰%者評價為△,*到娜者 評價為X,上述的值作為财久性表示於表8中。相對轉換效 率的初期值’ 500小時後的轉換效率為6〇%以上者合格' 到60%者不合格。 ° ° ’不 另外,在表8中,也表示出使用沒有加入聚苯并咪唑 系化合物的電解液的光電轉換元件的結果。 106 201210835 38254pif 表8 試料號碼 聚笨并咪嗤 系化合物 色素 開放電壓 /V 轉換效率 而寸久性 備註 8-1 No.l S-9 ◎ ◎ ◎ 本發明 8-2 No.2 S-9 ◎ ◎ 〇 本發明 8-3 No.3 S-9 ◎ ◎ 〇 本發明 8-4 No.4 S-9 ◎ ◎ 〇 本發明 8-5 No.5 S-9 ◎ ◎ 〇 本發明 8-6 No.6 S-9 ◎ ◎ ◎ 本發明 8-7 No.7 S-9 〇 ◎ 〇 本發明 8-8 No.8 S-9 〇 〇 〇 本發明 8-9 無 S-9 〇 〇 〇 本發明 8-10 No.l T-24 ◎ ◎ ◎ 本發明 8-11 No.2 T-24 ◎ ◎ ◎ 本發明 8-12 No.3 T-24 ◎ ◎ ◎ 本發明 8-13 No.4 T-24 ◎ ◎ ◎ 本發明 8-14 No.5 T-24 ◎ ◎ ◎ 本發明 8-15 No.6 T-24 ◎ ◎ ◎ 本發明 8-16 No.7 T-24 〇 ◎ ◎ 本發明 8-17 No.8 T-24 〇 〇 ◎ 本發明 8-18 無 T-24 〇 〇 ◎ 本發明 8-19 No.l T-9 ◎ ◎ ◎ 本發明 8-20 No.2 T-9 ◎ ◎ ◎ 本發明 8-21 No.3 T-9 ◎ ◎ ◎ 本發明 8-22 No.4 T-9 ◎ ◎ ◎ 本發明 8-23 No.5 T-9 ◎ ◎ ◎ 本發明 8-24 No.6 T-9 ◎ ◎ ◎ 本發明 8-25 No.7 T-9 〇 ◎ ◎ 本發明 8-26 No.8 T-9 〇 ◎ ◎ 本發明 8-27 無 T-9 〇 ◎ ◎ 本發明 8-28 No.l A-l ◎ ◎ Δ 比較例 8-29 No.2 A-l ◎ ◎ X 比較例 8-30 No.3 A-l ◎ ◎ X 比較例 8-31 No.4 A-l ◎ ◎ X 比較例 8-32 No.5 A-l ◎ ◎ X 比較例 8-33 No.6 A-l ◎ ◎ Δ 比較例 8-34 No.7 A-l 〇 ◎ Δ 比較例 8-35 No.8 A-l 〇 〇 X 比較例 8-36 無 A-l 〇 〇 X 比較例 107 201210835 . ----»11 由表8可知,使用本發明的色素的光電化學電池為, 開放電壓及轉換效率的初期值皆是合格標準,而經過500 小時後的轉換效率為初期值的6〇%或6〇%以上,且表示出優 異的耐久性。 相對上述’使用比較色素的情況下,開放電壓及轉換 效率的初期值為合格標準,但在耐久性上有問題。 [實驗9] (光電化學電池1) 根據以下所示的順序,製作具有與日本專利特開 2004-152613號公報的圖1所示的光電極1〇同樣結構的光電 極’然後除使用此光電極以外,製作有與曰本專利特開 2004-152613號公報的圖1所示的色素增感太陽電池20同樣 結構的光電化學電池(半導體電極2的受光面F2的面積:1 cm2)。其中,關於具有該2層構造之半導體電極2的各層, 配置在靠近透明電極1的一側的層稱為「第1層」,配置在 靠近多孔體層PS的一側的層稱為「第2層」。 首先,使用平均粒徑25 nm的P25粉末(Deguss公司製 造、商品名)、與其粒子徑不同的氧化鈦粒子、P2〇〇粉末( 平均粒徑200 nm、Deguss公司製造、商品名),而以P25與 P200的合計含有量為15%,且P25與P200的質量比為P25 : P200 — 30.70的方式,於其中加入乙酿丙酮(acetyiacet〇ne) 、離子交換水、界面活性劑(東京化成公司製造、商品名: 「Triton-X」),並進行混練,以調製第2層形成用的漿料( 以下稱「漿料1」)。 108 201210835 38254pif 接下來’除了不使用P2〇〇、僅使用P25以外,利用與 上述的漿料1同樣的調製順序,調製第丨層形成用的漿料(P1 的含有量:15%、以下稱「聚料2」)。 —方面’在玻璃基板(透明導電性玻璃)上,準備形成 有摻雜氟的Sn〇2導電膜(膜厚:7〇〇 nm)的透明電極。接著 ’在Sn〇2導電膜上’以棒塗佈法塗佈上述的漿料2,然後 使其乾燥。之後,在空氣中、45〇°c下進行3〇分鐘的烘烤。 如上述,以於透明電極上,形成半導體電極2的第1層。 然後,使用漿料1,藉由重複進行與上述同樣的塗佈 與烘烤,在第1層上形成第2層。如上述,在Sn〇2導電膜上 形成半導體電極2(受光面的面積:1·〇 cm2、第1層與第2 層的合計厚度:ίο μιη(第1層的厚度:3 μιη、第2層的厚度 7 μιη)) ’然後製作不含有增感色素的光電極1 〇。 之後,調製表9記載的色素的乙醇溶液(各增感色素的 $度:3Χ10-4 m〇l/L)以作為色素。然後,將上述光電極1〇 /叉潰在上述溶液中,在8〇°C的溫度條件下放置2〇小時,藉 此在半導體電極的内部吸附增感色素合計約丨〇χΐ〇·; mol/cm2。 繼之,製作具有與上述的光電極同樣形狀與大小的對 極CE。首先在透明導電性玻璃上,滴下氣㈣六水合物 (chloroplatinic add hexahydrate)的異丙醇溶液,並在空氣中 乾燥後,然後藉由在450X:下進行30分鐘的烘烤處理,以得 到翻燒結對極CE。此外,上述對極CE中預先設置有 質E的注入用的孔(直徑1 mm)。 109 201210835. 接著,調製以f氧基乙腈為溶劑,溶解硤化鋅、峨化 -1,2-二甲基-3-丙基咪唾、姨、4_第三丁基呲唆的液狀電解 質(磁化辞的濃度:10 mmol/L、碘化二甲基丙基咪唑的濃 度·· 0. 6 mol/L、碘的濃度:〇· 〇5 mo〗/L、4_第三丁基呲啶 的濃度:1 mol/L)。 然後,準備有符合半導體電極的大小的形狀之三井杜 邦聚合化學(DU PONT-MITSUI POLYCHEMICALS)公司 製造的間隔物S(商品名:「Hi-milan」,乙烯/甲基丙烯酸 無規共聚多離子聚合物膜)’如曰本專利特開2〇〇4_ι526ΐ3 號公報的圖1所示’通過間隔物使光電極與對極為對向配置 ,分別利用熱熔接以得到接合在一起的電池的殼體(未填充 電解液)。 ' 接著,由對極的孔注入液狀電解質到殼體内後,用與 間隔物相同材料的構件塞住孔’進而在對極的孔使上述構 件熱炼接而密封住孔,以完成光電化學電池1。 (光電化學電池2) 除了液狀電解質中的蛾化鋅的漢度為5〇職〇此以外 ,以與光電化學電池1同樣地順序與條件,來製作光電化學 電池2。 (光電化學電池3) 除了液狀電解質中以蜗化鐘取代峡化鋅進行添加,液 狀電解質中峨化鐘的濃度為2〇 mm〇i/L以外,以與光電化 學電池1同樣地順序與條#,來製作比較光電化學電池卜 (比較光電化學電池4)No.8 OC^CHo On the conductive glass, the porous titanium semiconductor film (thickness 15 (four)) of the pigment described in Table 8 was dropped on the Nq1 to the 8th version of the miso compound electrolysis f. New Zealand, New Zealand A frame type spacer (thickness 25 (four), followed by covering the scale electrode to fabricate a photoelectric conversion element. On the obtained photoelectric conversion element, the light of the immediately read W is irradiated, and the obtained open voltage and photoelectricity are shown in the table. 8. In the middle, the dry (the evaluation of the result) W open voltage is 7.0 V#. The above is not indicated by 0 in ◎, 6.GV or more, less than _: ^ is not i6. 0 V is represented by x, and 6 5 v or more are qualified. (8) Conversion efficiency is 2. 〇% or more to 2.0%, ^, ^, L uw or more, y U is not ' 〇 · 3% or more, not 8% △ indicates 105 201210835 . Less than 3% · 3% are represented by X, and conversion 钕 Λ 尤 尤 μ μ μ μ μ μ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 . . . . . 3 3 3 3 3 3 3 3 3 In addition, the initial value of the relative conversion efficiency, the conversion efficiency after _ hours, the above is evaluated as ◎, _ or more, less than the evaluation of Ο, above, not %% The evaluation is △, * is the evaluation of X, and the above values are shown in Table 8. The initial value of the relative conversion efficiency is less than 6〇% after the conversion efficiency of 500% or more. Failed. ° ° 'No additional, in Table 8, the results of using a photoelectric conversion element of an electrolyte without a polybenzimidazole-based compound are also shown. 106 201210835 38254pif Table 8 Sample number polystyrene and oxime compound Pigment open voltage/V conversion efficiency and long-term remarks 8-1 No.l S-9 ◎ ◎ ◎ The present invention 8-2 No. 2 S-9 ◎ ◎ 〇 The present invention 8-3 No. 3 S-9 ◎ ◎ 〇 发明 8 -4 8-4 No. 4 S-9 ◎ ◎ 〇 发明 8 8 8-5 No. 5 S-9 ◎ ◎ 〇 The present invention 8-6 No. 6 S-9 ◎ ◎ ◎ The present invention 8-7 No .7 S-9 〇◎ 〇8-8 No.8 S-9 of the present invention 88-9 without S-9 〇〇〇The present invention 8-10 No.l T-24 ◎ ◎ ◎ The present invention 8-11 No. 2 T-24 ◎ ◎ ◎ The present invention 8-12 No. 3 T-24 ◎ ◎ ◎ The present invention 8-13 No. 4 T-24 ◎ ◎ ◎ The present invention 8-14 No. 5 T- 24 ◎ ◎ ◎ The present invention 8-15 No. 6 T-24 ◎ ◎ ◎ The present invention 8-16 No. 7 T-24 〇 ◎ ◎ The present invention 8-17 No. 8 T-24 〇〇 ◎ The present invention 8-18 No T-24 〇〇 ◎ The present invention 8-19 No. l T- 9 ◎ ◎ ◎ The present invention 8-20 No. 2 T-9 ◎ ◎ ◎ The present invention 8-21 No. 3 T-9 ◎ ◎ ◎ The present invention 8-22 No. 4 T-9 ◎ ◎ ◎ The present invention 8- 23 No. 5 T-9 ◎ ◎ ◎ The present invention 8-24 No. 6 T-9 ◎ ◎ ◎ The present invention 8-25 No. 7 T-9 〇 ◎ ◎ The present invention 8-26 No. 8 T-9 〇 ◎ ◎ The present invention 8-27 No T-9 〇 ◎ ◎ The present invention 8-28 No. 1 Al ◎ ◎ Δ Comparative Example 8-29 No. 2 Al ◎ ◎ X Comparative Example 8-30 No. 3 Al ◎ ◎ X Comparative Example 8-31 No. 4 Al ◎ ◎ X Comparative Example 8-32 No. 5 Al ◎ ◎ X Comparative Example 8-33 No. 6 Al ◎ ◎ Δ Comparative Example 8-34 No. 7 Al 〇 ◎ Δ Comparative Example 8-35 No.8 Al 〇〇X Comparative Example 8-36 No Al 〇〇X Comparative Example 107 201210835 . ----»11 It can be seen from Table 8 that the photoelectrochemical cell using the dye of the present invention is open voltage and The initial values of the conversion efficiency are all eligibility criteria, and the conversion efficiency after 500 hours is 6〇% or more than the initial value. It also shows excellent durability. In the case where the comparative dye is used as described above, the initial values of the open voltage and the conversion efficiency are acceptable standards, but there is a problem in durability. [Experiment 9] (Photoelectrochemical cell 1) A photoelectrode having the same structure as that of the photoelectrode 1 shown in Fig. 1 of Japanese Laid-Open Patent Publication No. 2004-152613 was produced in the following order, and then the light was used. A photoelectrochemical cell (area of the light-receiving surface F2 of the semiconductor electrode 2: 1 cm 2 ) having the same configuration as that of the dye-sensitized solar cell 20 shown in Fig. 1 of the Japanese Patent Publication No. 2004-152613 is prepared. In the respective layers of the semiconductor electrode 2 having the two-layer structure, a layer disposed on the side close to the transparent electrode 1 is referred to as a "first layer", and a layer disposed on a side close to the porous layer PS is referred to as a "second layer". Floor". First, P25 powder (manufactured by Deguss Co., Ltd., trade name) having an average particle diameter of 25 nm, titanium oxide particles having a different particle diameter, and P2 powder (having an average particle diameter of 200 nm, manufactured by Deguss Co., Ltd.) are used. The total content of P25 and P200 is 15%, and the mass ratio of P25 to P200 is P25: P200-30.70, in which acetyiacetone, ion exchange water, and surfactant are added (Tokyo Chemical Co., Ltd.) Manufacturing, trade name: "Triton-X"), and kneading to prepare a slurry for forming a second layer (hereinafter referred to as "slurry 1"). 108 201210835 38254pif Next, the slurry for forming the second layer is prepared by the same modulation sequence as that of the above-described slurry 1 except that P2 is not used, and P25 is used (the content of P1 is 15%, hereinafter referred to as "Polymer 2"). - Aspects A transparent electrode in which a fluorine-doped Sn 〇 2 conductive film (film thickness: 7 〇〇 nm) was formed on a glass substrate (transparent conductive glass) was prepared. Next, the above slurry 2 was applied by a bar coating method on 'on the Sn 2 conductive film', and then dried. Thereafter, baking was carried out for 3 minutes in air at 45 ° C. As described above, the first layer of the semiconductor electrode 2 is formed on the transparent electrode. Then, using the slurry 1, the second layer was formed on the first layer by repeating the same coating and baking as described above. As described above, the semiconductor electrode 2 is formed on the Sn〇2 conductive film (area of the light-receiving surface: 1·〇cm2, total thickness of the first layer and the second layer: ίο μιη (thickness of the first layer: 3 μm, second) The thickness of the layer is 7 μηη)) ' Then a photoelectrode 1 不 containing no sensitizing dye is prepared. Thereafter, an ethanol solution of the dye described in Table 9 (degree of each sensitizing dye: 3Χ10-4 m〇l/L) was prepared as a dye. Then, the photoelectrode 1 is smashed in the above solution and left at a temperature of 8 ° C for 2 Torr, thereby absorbing the sensitizing dye in the inside of the semiconductor electrode. /cm2. Next, a counter electrode CE having the same shape and size as the above-described photoelectrode was produced. First, a solution of chloroplatinic add hexahydrate in isopropyl alcohol was dropped on a transparent conductive glass, dried in air, and then baked at 450X: for 30 minutes. Sintered to the pole CE. Further, a hole (1 mm in diameter) for injection of the mass E is previously provided in the counter electrode CE. 109 201210835. Next, prepare a liquid solution of zinc telluride, deuterated-1,2-dimethyl-3-propylimidazolium, hydrazine, and 4_t-butylhydrazine using f-oxyacetonitrile as a solvent. Electrolyte (concentration of magnetization: 10 mmol/L, concentration of dimethylpropylimidazolium iodide · 0.6 mol/L, concentration of iodine: 〇· 〇 5 mo〗/L, 4_t-butyl Acridine concentration: 1 mol/L). Then, a spacer S manufactured by DU PONT-MITSUI POLYCHEMICALS, which has a shape conforming to the size of the semiconductor electrode, is prepared (trade name: "Hi-milan", ethylene/methacrylic acid random copolymerization polyionic polymerization As shown in Fig. 1 of the Japanese Patent Laid-Open Publication No. 2 ι 4_ι 526 ΐ 3, the photoelectrode and the pair are disposed opposite each other by a spacer, and the housing of the battery is joined by heat fusion, respectively. Unfilled electrolyte). Then, after injecting the liquid electrolyte into the casing from the hole of the counter electrode, the hole is plugged with a member of the same material as the spacer, and then the hole is sealed in the hole of the counter electrode to seal the hole to complete the photoelectric Chemical battery 1. (Photoelectrochemical Cell 2) The photoelectrochemical cell 2 was produced in the same manner as in the photoelectrochemical cell 1 except that the amount of molybdenum in the liquid electrolyte was 5 Å. (Photoelectrochemical cell 3) In the liquid electrolyte, the addition of the gorging clock to the zinc oxide is carried out, and the concentration of the bismuth clock in the liquid electrolyte is 2 〇mm〇i/L, in the same order as the photoelectrochemical cell 1. And strip #, to make a comparative photoelectrochemical battery (comparative photoelectrochemical battery 4)
S 110 201210835 38254pif 除了液狀電解質中以碘化鋰取代碘化鋅進行添加,液 狀電解質中碘化鋰的濃度為1〇〇 mmol/L以外,以與光電化 學電池1同樣地順序與條件,來製作比較光電化學電池4。 (試驗與評價) 根據以下的順序,就光電化學電池][〜4所使用的試料 ,測定轉換效率。 電池特性評價試驗為使用太陽光模擬器(*入(:〇1^製 造、商品名:「WXS-85H型」),在通過AM濾光片(AM1. 5) 的來自於氤燈光源的類似太陽光的照射條件,設為1⑼ mW/cm2(所謂的「1Sun」的照射條件)的測定條件下進行。 關於各光電化學電池,使用Ι-ν測試在室溫下測定電 流-電壓特性,並由此求得轉換效率。上述所得到的結果表 不於表9A(lSun的照射條件)的「初期值」。另外,在_ lSun照射下,⑽㈣荷的作動條件,轉換效率的經過 〇 J時後的轉換效率的結果也表示於表9a。轉換效率的 =期值為2.輪上者合格,不到2 4%者不合格。另外,相 期值’經過期、時後的轉換效率的降低率,2〇%以 下者合格,超過2〇%者不合格。 卜、’除了測定轉換效率的經過5{)()小時後的轉換效 =、、、、σ以外’同樣地進行評價。上述的結果表示犯 中0 丨Ε_ 111 201210835 38254pif 表S 110 201210835 38254pif In addition to lithium iodide instead of zinc iodide in the liquid electrolyte, the concentration of lithium iodide in the liquid electrolyte is 1 〇〇 mmol/L, and the order and conditions are the same as those of the photoelectrochemical cell 1 . To make a comparative photoelectrochemical cell 4. (Test and Evaluation) According to the following procedure, the conversion efficiency was measured for the sample used in the photoelectrochemical cell [~4]. The battery characteristic evaluation test was performed using a solar light simulator (*in (:〇1^, trade name: "WXS-85H type"), similar to the light source from the xenon lamp passing through the AM filter (AM1. 5). The irradiation conditions of the sunlight are measured under the measurement conditions of 1 (9) mW/cm 2 (so-called "1 Sun" irradiation conditions). For each photoelectrochemical cell, the current-voltage characteristics were measured at room temperature using a Ι-ν test. The conversion efficiency was determined as follows. The results obtained above are not shown in the "initial value" of Table 9A (irradiation conditions of 1 Sun). In addition, under the irradiation of _ lSun, the operating conditions of the (10) (four) charge, the transition efficiency 〇J The results of the subsequent conversion efficiency are also shown in Table 9a. The conversion efficiency = the period value is 2. The round is qualified, and less than 24% is unqualified. In addition, the phase value is 'elapsed period, after the conversion efficiency The reduction rate was 2% or less, and the case was more than 2%%. The evaluation was performed in the same manner except for the conversion efficiency =, ,, and σ after the measurement of the conversion efficiency for 5 {) (). The above results indicate that the crime is 0 丨Ε _ 111 201210835 38254pif
表9A 試料號级 Γ . η 1 a — 无1:化學電池 色素 _ 轉S 初助補 t效率 備註 y-i a 9-2A~~~ 9-3A ~~~9¾ 光電化學電池1 光電化學電池2 光電化學電池3 S-18 S-18 S-18 3.1 3.0 2.9 JUD小B守设 2.9 2.7 2.5 本發明 本發明 本發明 ~~~9^5A^ 9-6A 9-7A y\j i u ^ 4 Γ光電化學電池1 光電化學龟池2 光電化學-電池3 S-18 A-2 A-2 Α-Γ~ 2.9 2.9 3.0 2.4 1.3 1.1 本發明 比較例 比較例 2.8 1.2 比較例 ------1 化学電池4 A-2 2.8 0.9 比較例 由表9A、9B可知’使用本發明的色素的光電化學電池 為,轉換效率的初期值為合格標準,而經過300小時後的轉 換效率的降低率為20%以下’且表示出優異的耐久性。 相對上述,得知使用比較色素的情況下,轉換效率的 112Table 9A Sample No. Γ . η 1 a — No 1: Chemical Cell Pigment _ Turn S Initial Help t Efficiency Note yi a 9-2A~~~ 9-3A ~~~93⁄4 Photoelectrochemical Cell 1 Photoelectrochemical Cell 2 Photoelectric Chemical Battery 3 S-18 S-18 S-18 3.1 3.0 2.9 JUD Small B Guard 2.9 2.7 2.5 The present invention The present invention is ~~~9^5A^ 9-6A 9-7A y\jiu ^ 4 Γ Photoelectrochemistry Battery 1 Photoelectrochemical Turbine Pool 2 Photoelectrochemistry - Battery 3 S-18 A-2 A-2 Α-Γ~ 2.9 2.9 3.0 2.4 1.3 1.1 Comparative Example of the Invention Comparative Example 2.8 1.2 Comparative Example ------1 Chemical Battery 4 A-2 2.8 0.9 Comparative Example It is understood from Tables 9A and 9B that the photoelectrochemical cell using the dye of the present invention has an initial value of conversion efficiency as an acceptable standard, and the reduction rate of conversion efficiency after 300 hours has passed to 20% or less. 'And shows excellent durability. With respect to the above, it is known that the conversion efficiency is 112 in the case of using a comparative pigment.
S 201210835 38254pif 初期值為合格標準,但在耐久性上有問題。 [實驗10] 1. 二氧化鈦分散液的調製 在内侧塗佈氟樹脂的内容積200 ml的不鏽鋼製容器中 ,放入一氧化鈦微粒子(日本Aer〇sil股份有限公司製造,S 201210835 38254pif The initial value is an acceptable standard, but there is a problem with durability. [Experiment 10] 1. Preparation of titanium dioxide dispersion liquid A titanium oxide fine particle (manufactured by Aer〇sil Co., Ltd., Japan) was placed in a 200 ml stainless steel container with a fluororesin inside.
Degussa P-25)15 g、水45 g、分散劑(日本Aldrich公司製造 、TrironX_l〇〇)l g、直徑〇. 5 mm的氧化鍅珠子(见以伽公 司製造)30 g,然後使用砂研磨機(Aimex公司製造)在Moo 卬111下進行分散處理2小時。由所得到的分散液,過濾氧化 錘珠子。所得到的分散液中的二氧化鈦微粒子的平均粒徑 為2. 5 μιη。其中,粒徑為利用MALVERN&司製造的 Mastersizer(商品名)來測定。 2. 吸附色素的氧化鈦微粒子層(電極A)的製作 準備覆蓋有摻雜氟的氧化錫之20 mmx20 mm的導電 性玻璃板(AGC股份有限公司製造,TC0玻璃,表面電阻 •約30 Ω/m )’在此導電層侧的兩端(距端部3 mm的寬的部 分)貼上間隔物用黏者膠帶後,在導電層上使用玻璃棒塗佈 上述分散液。分散液的塗佈後,剝離黏著膠帶,並在室溫 下風乾一天。接者,將上述的半導體塗佈玻璃板放入電器 爐(Yamato Scientific股份有限公司製造高溫爐(muffle furnace)FP-32型)中在450°C下進行30分鐘的烘烤。取出半 導體塗佈玻璃板,並冷卻後’浸潰在表1〇所示的色素的乙 醇溶液(濃度:3xlCT4mol/L)中3小時。吸附色素的半導體塗 佈玻璃板在4-第三丁基呲啶中浸潰15分鐘後,以乙醇清洗 113 201210835 38254pif ,並自然乾燥,以得到吸附色素的氧化鈦微粒子層(電極 A)。電極A的色素增感氧化鈦微粒子層的厚度為1〇卜111,氧 化鈦微粒子的塗佈量為2〇 g/m2。另外,色素的吸附量,依 據色素的種類’在〇· 1 mm〇l/m2〜1〇 mm〇1/m2的範圍内。 3.光電化學電池a的製作 浴劑為使用乙腈與3-曱基-2- °惡唾林_的體積比 90/10的混合物。在上述溶劑中,加入碘與作為電解質鹽之 1-曱基-3-已基咪唑的碘鹽,以調製含有〇 5 m〇1/L的電解 質及0. 05 mol/L的蛾的溶液。在上述溶液中,相對於(溶劑 +含氮高分子化合物+鹽)1〇〇質量份,加入1〇質量份的含 氮高分子化合物(〇〇。而且,對於含氮高分子化合物的反應 性氮原子,混合親電子劑(β)〇· 1 m〇le以成為均勻的反應溶 液。 另一方面,在上述電極A的色素增感氧化鈦微粒子層 上設置包括通過間隔物蒸鑛鉑的玻璃板之對極的鉑薄膜側 ,並固定導電性玻璃板與鉑蒸鍍玻璃板。將所得到的組合 體的開放端浸潰在上述電解質溶液中,藉由毛細管現象使 反應溶液浸透入色素增感氧化鈦微粒子層中。 接著’在80°C下加熱3〇分鐘,以進行交聯反應。以上 述方式,在如日本專利特開2000-323190號公報的圖2所示 之導電性玻璃板10的導電層12上,包括色素增感氧化鈦微 粒子層20、電解質層30,及由鉑薄膜42與玻璃板41的對極 40依序積層之本發明的光電化學電池卜丨(試料號碼丨04)Degussa P-25) 15 g, water 45 g, dispersant (made by Aldrich, Japan, Triron X_l〇〇) lg, diameter 〇 5 mm of cerium oxide beads (see Sigma) 30 g, then sand grinder (manufactured by Aimex Corporation) Dispersion treatment was carried out for 2 hours under Moo® 111. The oxidized hammer beads were filtered from the obtained dispersion. 5 μιη。 The average particle size of the titanium dioxide particles having a particle size of 2. 5 μιη. Among them, the particle size was measured by a Mastersizer (trade name) manufactured by MALVERN & 2. Preparation of titanium oxide fine particle layer (electrode A) for adsorbing pigment Preparation of a 20 mm x 20 mm conductive glass plate covered with fluorine-doped tin oxide (manufactured by AGC Co., Ltd., TC0 glass, surface resistance: about 30 Ω/ m) 'After the two sides of the conductive layer side (a portion wider than 3 mm from the end portion), the spacer adhesive tape was attached, and the dispersion liquid was applied on the conductive layer using a glass rod. After the dispersion was applied, the adhesive tape was peeled off and air-dried at room temperature for one day. Next, the above-mentioned semiconductor coated glass plate was placed in an electric furnace (muffle furnace type FP-32 manufactured by Yamato Scientific Co., Ltd.) and baked at 450 ° C for 30 minutes. The semiconductor coated glass plate was taken out, and after cooling, it was immersed in an ethanol solution (concentration: 3 x 1 CT 4 mol/L) of the pigment shown in Table 1 for 3 hours. The semiconductor coated glass plate on which the dye was adsorbed was immersed in 4-tert-butyl acridine for 15 minutes, and then washed with ethanol at 113 201210835 38254 pif and naturally dried to obtain a titanium oxide fine particle layer (electrode A) which adsorbed the dye. The thickness of the dye-sensitized titanium oxide fine particle layer of the electrode A was 1 〇 111, and the amount of the titanium oxide fine particles applied was 2 〇 g/m 2 . Further, the amount of adsorption of the dye depends on the type of the pigment in the range of 〇·1 mm〇l/m2 to 1〇mm〇1/m2. 3. Preparation of photoelectrochemical cell a The bath was a mixture of 90/10 by volume ratio of acetonitrile to 3-mercapto-2-oxo salin. To the above solvent, iodine and an iodide salt of 1-mercapto-3-hexylimidazole as an electrolyte salt were added to prepare a solution containing 〇 5 m〇1/L of the electrolyte and 0.05 mol/L of moth. In the above solution, 1 part by mass of a nitrogen-containing polymer compound (〇〇. Further, reactivity with a nitrogen-containing polymer compound) is added to 1 part by mass of (solvent + nitrogen-containing polymer compound + salt). A nitrogen atom is mixed with an electrophilic agent (β) 〇·1 m〇le to form a uniform reaction solution. On the other hand, a glass including a platinum-evaporating layer by a spacer is provided on the dye-sensitized titanium oxide fine particle layer of the electrode A. The platinum film side of the opposite pole of the plate is fixed with a conductive glass plate and a platinum vapor-deposited glass plate. The open end of the obtained assembly is immersed in the above electrolyte solution, and the reaction solution is impregnated into the pigment by capillary action. In the titanium oxide fine particle layer, it is heated at 80 ° C for 3 minutes to carry out a crosslinking reaction. In the above manner, the conductive glass plate shown in Fig. 2 of Japanese Patent Laid-Open Publication No. 2000-323190 The conductive layer 12 of 10 includes a dye-sensitized titanium oxide fine particle layer 20, an electrolyte layer 30, and a photoelectrochemical cell dip of the present invention in which the platinum film 42 and the counter electrode 40 of the glass plate 41 are sequentially laminated (sample number 丨04)
114 S 201210835. 另外,除了變更如表丨〇所示之色素與電解質組成物的 組成的組合以外’藉由重複上述製程,以得到有不同感光 體及/或電荷移動體的光電化學電池a-2(試料號碼1 〇-4)。 4·光電化學電池b、c的製作 (1)光電化學電池b 以上述的方式,將包括用本發明的色素使之色素增感 的氧化鈦微粒子層的電極A(2〇 mmx2〇 mm),通過間隔物而 重疊在相同大小的鉑沈積玻璃板上。接著,利用毛細管現 象’使在兩玻璃板的縫隙間被電解液(以乙腈與3-曱基-2-°惡唾林_的體積比90/10的混合物作為溶劑之蛾〇· 〇5 mol/L、埃化經〇. 5 mol/L的溶液)浸透,以製作光電化學 電池b-Ι。另外,除了變更如表1〇所示之色素以外,藉由重 複上述製程’以得到光電化學電池b-2(試料號碼10-5)。 (2 )光電化學電池c(日本專利特開平9_27352號中記載的電 解質) 以上述的方式,在包括用本發明的色素使之色素增感 的氧化鈦微粒子層的電極A(20 mmx20 mm)上,塗佈電解 液’並使之含浸。其中,電解液為在含有六乙二醇甲基丙 婦酸S旨(Hexaethylene glycol methacrylate ester)(曰本油脂化 學股份有限公司製造,BLEMMERPE-350)1 g、乙二醇1 g 、作為聚合起始劑之2-羥基-2-曱基-1_苯基_丙__1_酮 (2-11}^1:〇\7-2-11^11丫1-1-卩11611丫1131^11-1-〇116)(日本(^3-层61§>^ 股份有限公司製造,DAROCUR 1173)20 mg的混合液中’ 溶解碘化鋰5〇〇 mg,並藉由10分鐘的真空脫氣而得到。接114 S 201210835. Further, in addition to changing the combination of the composition of the pigment and the electrolyte composition as shown in Table ', by repeating the above process, a photoelectrochemical cell a having different photoreceptors and/or charge carriers is obtained. 2 (sample number 1 〇-4). 4. Production of photoelectrochemical cells b and c (1) Photoelectrochemical cell b In the above-described manner, an electrode A (2 〇 mm x 2 〇 mm) including a titanium oxide fine particle layer sensitized with the dye of the present invention was used. Overlap on the same size platinum-deposited glass plate by spacers. Then, using the capillary phenomenon, the mixture of the electrolyte (the mixture of acetonitrile and 3-mercapto-2- oxalate _ 90/10 by volume) as a solvent between the gaps of the two glass plates is used as a solvent. /L, Aihuajing. 5 mol/L solution) soaked to make photoelectrochemical cell b-Ι. Further, the photoelectrochemical cell b-2 (sample No. 10-5) was obtained by repeating the above process except that the dye shown in Table 1 is changed. (2) Photoelectrochemical cell c (electrolyte described in Japanese Patent Laid-Open Publication No. Hei 9-27352) In the above-described manner, on the electrode A (20 mm x 20 mm) including the titanium oxide fine particle layer sensitized with the dye of the present invention. , coating the electrolyte 'and impregnating it. In the above, the electrolyte is contained in Hexaethylene glycol methacrylate ester (manufactured by Sakamoto Oil & Chemical Co., Ltd., BLEMMERPE-350), 1 g of ethylene glycol, and 1 g of ethylene glycol. 2-hydroxy-2-indolyl-1_phenyl-propan-1-one-ketone (2-11}^1: 〇\7-2-11^11丫1-1-卩11611丫1131^11 -1-〇116) (Japan (^3-layer 61§>^ Co., Ltd., DAROCUR 1173) in a mixture of 20 mg 'dissolved 5 〇〇mg of lithium iodide and removed by vacuum for 10 minutes Get it with gas.
115 S 201210835 38254pif 著,利用將含浸上述混合溶液的多孔性氧化鈦層置於減廢 下,除去多孔性氧化鈦層中的氣泡,以促使單體的浸透之 後,在多孔性氧化鈦層的微細孔内填充藉由紫外光照射而 聚合之高分子化合物的均勻溶膠。將以上述的方式得到之 物品在碘環境中曝露30分鐘,使碘擴散於高分子化合物中 之後,重疊鉑蒸鍍玻璃板,以得到光電化學電池c_l。另外 ,除了變更如表10所示之色素以外,藉由重複上述製程, 以得到光電化學電池C_2(試料號碼10-6)。 5.光電轉換效率的測定 藉由將500W的氙燈(ushio公司製造)的光,通過AM1. 5 濾光片(Oriel公司製造)及銳波濾光片(Kenk〇 L_42),以作為 不含紫外線的模擬太陽光。光強度為89mW/cm2。 在上述的光電化學電池的導電性玻璃板1〇與鉑蒸氣 沈積玻璃板40上分別連接鱷魚夾,而各鱷魚夹連接於電流 電壓測定裝置(Keithley SMU238型(商品名))上。在此由導 電性玻璃板10侧照射模擬太陽光,利用電流電壓測定裝置 以測定所產生的電。將藉此求得的光電化學電池的轉換效 率的初期值,及3 0 0小時連續照射時的轉換效率的降低率表 示於表10。轉換效率的初期值為2. 7%以上者合格,不到2 7% 者不合格。另 >卜’經過300小時後的轉換效率的降低率為2〇% 以下者合格,超過20%者不合格。115 S 201210835 38254pif, the porous titanium oxide layer impregnated with the above mixed solution is placed under reduced waste to remove bubbles in the porous titanium oxide layer to promote the impregnation of the monomer, and the fine layer of the porous titanium oxide layer The pores are filled with a uniform sol of a polymer compound polymerized by irradiation with ultraviolet light. The article obtained in the above manner was exposed to an iodine atmosphere for 30 minutes to diffuse iodine into the polymer compound, and then the platinum vapor-deposited glass plate was laminated to obtain a photoelectrochemical cell c_1. Further, the photoelectrochemical cell C_2 (sample No. 10-6) was obtained by repeating the above process except that the pigment shown in Table 10 was changed. 5. Measurement of photoelectric conversion efficiency By using a 500 W xenon lamp (manufactured by ushio Co., Ltd.), it is passed through an AM 1.5 filter (manufactured by Oriel) and a sharp wave filter (Kenk 〇 L_42) as ultraviolet-free. Simulated sunlight. The light intensity was 89 mW/cm2. An alligator clip is attached to each of the conductive glass plate 1 of the above photoelectrochemical cell and the platinum vapor deposition glass plate 40, and each of the alligator clips is connected to a current-voltage measuring device (Keithley SMU238 type (trade name)). Here, the simulated sunlight is irradiated from the side of the conductive glass plate 10, and the generated electric current is measured by a current-voltage measuring device. The initial value of the conversion efficiency of the photoelectrochemical cell thus obtained and the rate of decrease in the conversion efficiency at the time of continuous irradiation for 300 hours are shown in Table 10. The initial value of the conversion efficiency is 2.7% or more, and less than 27% is unqualified. In addition, the rate of decrease in conversion efficiency after 300 hours has passed, and the rate of reduction of 2% or less has passed, and more than 20% has failed.
S 116 201210835 表10 試料 號碼 光電化學電池 含氮 尚分 子 親電 子劑 色素 轉換效率 備註 初期 值 300h 後 的降低 率(%) 10-1 光電化學電池a-1 α β S-13 3.1 7 本發明 10-2 光電化學電池b-1 無 無 S-13 2.9 10 本發明 10-3 光電化學電池c-1 無 無 S-13 3.0 15 本發明 10-4 光電化學電池a-2 α β Α-1 2.9 55 比較例 10-5 光電化學電池b-2 無 無 Α-1 2.9 77 比較例 10-6 光電化學電池c-2 無 無 Α-1 3.0 63 比較例 (備註) (1) 色素的記號為如本文中所記載。 (2) 含氮高分子α、親電子劑β表示為以下的化合物。 [化 49]S 116 201210835 Table 10 Sample number Photoelectrochemical cell Nitrogen-containing molecular electrophilic dye conversion efficiency Remarks Reduction rate after initial value 300h 10% Photoelectrochemical cell a-1 α β S-13 3.1 7 10 of the present invention -2 Photoelectrochemical cell b-1 No S-13 2.9 10 The present invention 10-3 Photoelectrochemical cell c-1 No S-13 3.0 15 The present invention 10-4 photoelectrochemical cell a-2 α β Α-1 2.9 55 Comparative Example 10-5 Photoelectrochemical cell b-2 No Α-1 2.9 77 Comparative Example 10-6 Photoelectrochemical cell c-2 No Α-1 3.0 63 Comparative Example (Remarks) (1) The symbol of the pigment is as follows As described in this article. (2) The nitrogen-containing polymer α and the electrophilic agent β are represented by the following compounds. [化49]
[化 50] 由表10可知,使用本發明的色素的光電化學電池為, 轉換效率的初期值為合格標準,而經過300小時後的轉換效 率的降低率為15%以下,且表示出優異的财久性。 117 201210835 38254pif 初期,較色素的情況下’轉換效率的 辂铋準,但在耐久性上有問題。 發明,以實例揭露如上,然其並非用以限定本 式簡單說明】 疋依照本發明的光電轉換元件之一實例的示意剖 發明之精神和範圍巾具有通常知識者’在不脫離本 明之保護範n彳可作些許之更動與潤飾,故本發 【圖式簡ΐ^Γ 請專利範圍所界定者為準 面圖 【主要元件符號說明】 1:導電性支撐體 2:感光體層 3:電荷移動體層 4 :對極 5:受光電極 6 :電路 10 :光電轉換元件 21 :色素 22 :半導體微粒子 10(1 :光電化學電池As is clear from Table 10, in the photoelectrochemical cell using the dye of the present invention, the initial value of the conversion efficiency is an acceptable standard, and the reduction rate of the conversion efficiency after 300 hours has passed is 15% or less, and it is excellent. Long-term financial. 117 201210835 38254pif In the early stage, the conversion efficiency was better than in the case of pigmentation, but there was a problem in durability. The invention is disclosed by way of example, but it is not intended to limit the brief description of the present invention. The spirit and scope of the schematic invention of one example of the photoelectric conversion element according to the present invention has the general knowledge 'without departing from the scope of protection. n彳 can be used for some changes and retouching, so this hair [Figure ΐ ΐ Γ Γ Γ Γ Γ Γ Γ Γ 专利 专利 专利 专利 专利 专利 专利 【 【 【 【 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: 1: Body layer 4: Counter electrode 5: Light-receiving electrode 6: Circuit 10: Photoelectric conversion element 21: Pigment 22: Semiconductor particle 10 (1: Photoelectrochemical cell
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| JP2011059911A JP5620314B2 (en) | 2010-05-31 | 2011-03-17 | Photoelectric conversion element, photoelectrochemical cell, dye for photoelectric conversion element and dye solution for photoelectric conversion element |
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| KR (1) | KR101553104B1 (en) |
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| TWI690099B (en) * | 2019-08-23 | 2020-04-01 | 台灣中油股份有限公司 | Method for manufacturing perovskite solar cell module and perovskite solar cell module |
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| JP5809870B2 (en) * | 2011-06-22 | 2015-11-11 | 富士フイルム株式会社 | Photoelectric conversion element, photoelectrochemical cell, and dye used in them |
| JP5434998B2 (en) * | 2011-09-15 | 2014-03-05 | トヨタ自動車株式会社 | Negative electrode active material, negative electrode and battery |
| JP5881578B2 (en) | 2011-12-15 | 2016-03-09 | 富士フイルム株式会社 | Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, and dye solution |
| JP2014056741A (en) * | 2012-09-13 | 2014-03-27 | Kyushu Institute Of Technology | Method for manufacturing dye-sensitized solar cell and dye-sensitized solar cell |
| WO2014046145A1 (en) * | 2012-09-24 | 2014-03-27 | コニカミノルタ株式会社 | Photoelectric conversion element and method for manufacturing same |
| JP6063359B2 (en) | 2012-09-28 | 2017-01-18 | 富士フイルム株式会社 | Photoelectric conversion element, dye-sensitized solar cell, metal complex dye and dye solution formed by dissolving metal complex dye |
| JP5913222B2 (en) | 2012-09-28 | 2016-04-27 | 富士フイルム株式会社 | Photoelectric conversion element and dye-sensitized solar cell |
| JP5913223B2 (en) | 2012-09-28 | 2016-04-27 | 富士フイルム株式会社 | Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, dye solution and dye-adsorbing electrode |
| JP2014082187A (en) | 2012-09-28 | 2014-05-08 | Fujifilm Corp | Photoelectric conversion element and dye-sensitized solar cell |
| JP5992389B2 (en) | 2012-11-16 | 2016-09-14 | 富士フイルム株式会社 | Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, dye solution, dye-adsorbing electrode, and method for producing dye-sensitized solar battery |
| JP5944372B2 (en) | 2012-12-17 | 2016-07-05 | 富士フイルム株式会社 | Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, dye solution, dye-adsorbing electrode, and method for producing dye-sensitized solar battery |
| JP5972811B2 (en) | 2013-02-22 | 2016-08-17 | 富士フイルム株式会社 | Photoelectric conversion element, method for producing photoelectric conversion element, and dye-sensitized solar cell |
| JP6047513B2 (en) | 2013-03-25 | 2016-12-21 | 富士フイルム株式会社 | Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, and dye solution containing metal complex dye |
| CN106463271B (en) * | 2014-08-28 | 2018-09-11 | 株式会社藤仓 | Dye-sensitized solar cell element electrolyte and the dye-sensitized solar cell element for using the electrolyte |
| JP5791770B1 (en) * | 2014-08-28 | 2015-10-07 | 株式会社フジクラ | Electrolyte for dye-sensitized solar cell element, and dye-sensitized solar cell element using the same |
| JP6641667B2 (en) * | 2015-03-03 | 2020-02-05 | 株式会社リコー | Coating liquid, structure for solar cell, solar cell, and method for manufacturing structure for solar cell |
| CN109698073B (en) * | 2017-10-23 | 2020-11-24 | 北京工商大学 | Photoelectric Conversion Properties of Ordered Hybrid Thin Films of Sodium Indigo Disulfonate and Hemicyanine Derivatives |
| CN109148696A (en) * | 2018-07-16 | 2019-01-04 | 天津师范大学 | Application of the metal organic hybrid perovskite ferroelectric body thin film in terms of for photovoltaic industry based on methyl viologen ligand |
| CN110379889A (en) * | 2019-07-31 | 2019-10-25 | 浙江天地环保科技有限公司 | A kind of preparation method of high efficiency high stability full-inorganic perovskite solar battery |
| JP6927393B1 (en) * | 2020-08-31 | 2021-08-25 | 日本ゼオン株式会社 | Binder composition for electrochemical element, conductive material dispersion for electrochemical element, slurry composition for electrochemical element electrode, electrode for electrochemical element and electrochemical element |
| CN113421933A (en) * | 2021-05-26 | 2021-09-21 | 海南聚能科技创新研究院有限公司 | Semiconductor photosensitive composite material and preparation method and application thereof |
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| JP2000036330A (en) * | 1998-07-17 | 2000-02-02 | Fuji Photo Film Co Ltd | Method for manufacturing photoelectric conversion element |
| EP0991092B1 (en) * | 1998-09-30 | 2008-07-23 | FUJIFILM Corporation | Semiconductor particle sensitized with methine dye |
| JP4217320B2 (en) * | 1998-12-24 | 2009-01-28 | 富士フイルム株式会社 | Photoelectric conversion element and photoelectrochemical cell |
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