201217483 六、發明說明： 【發明所屬之技術領域】 本發明係關於接著薄膜及晶圓加工用膠帶。尤其，關 於接著薄膜及含有具有切晶膠帶與固晶薄膜兩種功能之層 合型切晶固晶薄膜之晶圓加工用膠帶。 【先前技術】 最近，已開發出在將半導體切斷分離（切割）成各個 晶粒時用以固定半導體晶圓之切晶膠帶，及用以使切斷之 半導體晶粒接著於導線架或封裝基板等之上，或者於堆疊 封裝中，同時具有用以使半導體晶粒彼此層合、接著之接 著薄膜（亦稱爲固晶薄膜、黏晶薄膜）兩種功能之切晶固 晶薄膜（D D F )。 該種切晶固晶薄膜，考量對半導體晶圓之貼附、或切 晶時對圓形框架之安裝等作業性，而有施與預切割加工者 〇 製作施以預切割加工之具有切晶固晶薄膜之晶圓加工 用膠帶，如例如專利文獻1所述，進行有於長條型脫模薄 膜之整面上層合接著劑層而成之接著薄膜之接著劑層上， 以對應於半導體晶圓之圓形刀刃切入切口，自脫模薄膜剝 離圓形部分之外側並捲取（以下稱爲接著劑層之捲取步驟 )，在利用該接著劑層之捲取步驟而控空之圓形接著薄膜 之接著劑層與在基材薄膜上層合黏著劑層而成之切晶膠帶 之黏著劑層予以加熱加壓貼合，以對應於切晶膠帶中之圓 201217483 形框架以圓形刀刃切入切口，剝離對應於圓形框架之部分 並進行捲取。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開2007-2 173號公報 【發明內容】 〔發明欲解決之課題〕 上述接著劑層之捲取步驟中，邊將一定之力加於圓形 部分外側之接著劑層上，邊自脫模薄膜剝離圓形部分外側 之接著劑層並經捲取。因此，於接著劑層捲取步驟之作業 過程中，產生圓形部分外側之接著劑層被切斷之現象。爲 了捲取接著劑層，而有預先將接著劑層之端部固定在捲取 用輥上等之初期作業，於切斷接著劑層時，必須暫時終止 接著劑層之捲取作業，於進行初期作業後再重開，而有實 施預切割加工之具有切晶固晶薄膜之晶圓加工用膠帶之生 產性降低之問題。 又，若爲解決上述問題而將晶圓加工用膠帶之寬度較 廣地去掉，則於接著劑層捲取步驟中’雖無將圓形部分外 側之接著劑層切斷之現象，但會使成爲不要之圓形部分外 側之接著劑層之量，或半導體晶圓之切晶、半導體之固晶 切晶晶粒等中成爲不要之晶圓加工用膠帶的量變多。 因此，本發明係爲解決以上之問題點而發展者’其目 的在於提供一種製作預切割加工成對應於半導體晶圓形狀 -6- 201217483 的形狀之晶圓加工用膠帶時之自脫模薄膜剝離不要之接著 劑層並捲取之步驟中，可防止捲取之接著劑層斷裂，同時 可提高經預切割加工之晶圓加工用膠帶之生產性之接著薄 膜，以及使用該接著薄膜製備之晶圓加工用膠帶。 〔用以解決課題之手段〕 本發明人等針對上述課題積極檢討之結果，發現藉由 使用相對於自接著劑層之脫模薄膜之每單位剝離力，接著 劑層之每同一單位之斷裂強度爲8 7.5倍以上，較好爲1 〇〇 倍以上之接著薄膜，於製備經預切割加工之晶圓加工用膠 帶時之接著劑層捲取步驟中，可防止特定形狀之外側接著 劑層之斷裂，進而，發現貼合該接著薄膜之接著劑層及黏 著薄膜之黏著劑層，可改善經預切割加工之晶圓加工用膠 帶之生產性，因而完成本發明。 亦即，本發明之第一樣態相關之接著薄膜爲接著劑層 層合於長條狀脫模薄膜上之接著薄膜，其特徵爲相對於前 述接著劑層自前述脫模薄膜之每單位剝離力，前述接著劑 層之每同一單位之斷裂強度爲8 7.5倍以上。 此處，剝離力隨著與剝離方向垂直方向之大小而變化 ，且斷裂強度隨著拉伸方向大小而變化。因此，所謂「每 同一單位」爲使對剝離方向成垂直之方向的大小與拉伸方 向之大小相同之情況（例如，與剝離方向成垂直之方向的 大小設爲1 0 m m而測定剝離力時，斷裂強度係以使拉伸方 向之大小成爲1 而測定），其特徵爲相對於此時之剝 201217483 離力之斷裂強度爲8 7.5倍以上。 又，接著薄膜可爲對應於如上述之半導體晶圓之切口 預先切入到接著劑層狀態之接著薄膜，亦可爲切口未切入 到接著劑層之狀態之接著薄膜。 本發明之第二樣態之接著薄膜爲上述本發明之第一樣 態相關之接著薄膜中，相對於前述接著劑層自前述脫模薄 膜之每單位剝離力，前述接著劑層之每同一單位之斷裂強 度爲100倍以上。 本發明之第一樣態之晶圓加工用膠帶之特徵爲使基材 薄膜上層合有黏著劑層之黏著薄膜的前述黏著劑層與上述 本發明之第一或第二樣態之接著薄膜之接著劑層貼合》 〔發明效果〕 藉由使用本發明之接著薄膜，在製備預切割加工成對 應於半導體晶圓形狀之特定形狀的晶圓加工用膠帶時自脫 模薄膜剝離不需要之特定形狀之外側接著劑層並捲取之接 著劑層捲取步驟中，可防止特定形狀之外側接著劑層之破 裂。又，貼合該接著層薄膜之接著層與黏著薄膜之黏著劑 層，可改善預切割加工之晶圓加工用膠帶之生產性。且， 可製作特定形狀之外側接著劑層之量較少，或半導體晶圓 之切晶、半導體之固晶切晶等中成爲不要之晶圓加工用膠 帶之量較少且生產效率良好之晶圓加工用膠帶。 【實施方式】 -8 - 201217483 以下基於圖式詳細說明本發明之實施形態。 圖1 ( a )爲本發明一實施形態之接著薄膜之槪視圖， 圖1 ( b )爲相同薄膜之剖面圖。如圖1 ( a )及圖1 ( b )所 示，接著薄膜2 0B具有於長條狀脫模薄膜1 1上層合接著劑 層1 2之構成。又，本實施形態係成爲於接著劑層1 2上進一 步層合脫模薄膜1 1 A之構成，爲可生產捲取成輥狀之製品 之接著薄膜。又，申請專利範圍中記載之脫模薄膜相當於 脫模薄膜1 1。 半導體裝置之製造步驟中，對應於半導體晶圓形狀之 圓形標籤形狀之接著劑層1 2係使用預切割加工之接著薄膜 20 (參照例如圖4 ( c ))。因此，以下參照圖2及圖3說明 經預切割加工之接著薄膜2〇之製作方法。 圖2 ( a )爲用以說明於圓形標籤形狀之接著劑層1 2上 切入切口之切口形成步驟之接著薄膜2 0A之平面圖，（b) 爲相同薄膜之剖面圖。圖3爲用以說明自脫模薄膜1 1剝離 成爲不要的圓形標籤形狀之外側之接著劑層1 2並捲取之接 著劑層捲取步驟之模式圖。 製作經預切割加工之接著薄膜2 0係首先自接著薄膜 20B剝離脫模薄膜1 1 A而成爲接著薄膜20A (參照圖1 ( b ) )之狀態。 接著，如圖2 ( a)及（b )所示，在接著薄膜2〇A中， 於接著劑層1 2上形成對應於半導體晶圓形狀之圓形標籤形 狀之切口 22 (切口 22之形成步驟）。利用切口 22，使接著 劑層12被切斷成切口 22內側之成爲圓形標籤形狀之接著劑 201217483 層（以下稱爲圓形接著劑層部）l2a，及切口 22外側之 著劑層（以下稱爲周邊接著劑層部）12b。此處，切口 係形成爲自接著劑層12之表面23a到達接觸於脫模薄膜 之接著劑層12內面23b爲止。 最後’如圖3所示，接著薄膜20A中，邊對周邊接著 層部12b施加一定之力，邊自脫模薄膜！〗剝離並捲取周 接著劑層部1 2b，成爲在脫模薄膜1 1上僅殘留挖開之圓 接著劑層部12a (接著劑層之捲取步驟）。據此，製作 接著劑層1 2經預切割加工成對應於半導體晶圓形狀的圓 標籤形狀之接著薄膜20。 本實施形態之接著薄膜2 0B有具有以下構成方面之 徵。 自脫模薄膜11剝離接著劑層12時，相對於其每單位 剝離力，接著劑層1 2之每一同單位之斷裂強度爲8 7.5倍 上，較好爲1 〇〇倍以上。此處，剝離力隨著與剝離方向 直方向之大小而變化，且斷裂強度隨著拉伸方向大小而 化。因此，所謂「每同一單位」爲使與剝離方向成垂直 方向大小與拉伸方向大小設爲相同之情況，例如以與剝 方向成垂直之方向大小設爲1 〇mm而測定剝離力時，斷 強度係以使拉伸方向之大小設爲1 〇mm而測定。 接著，針對使接著薄膜之接著劑層與在基材薄膜上 合黏著劑層之黏著薄膜之黏著劑層貼合之晶圓加工用膠 (切晶固晶薄膜）加以說明。 圖4 ( a )爲本發明一實施形態之晶圓加工用膠帶（ 接 22 11 劑 邊 形 將 形 特 之 以 垂 變 之 離 裂 層 帶 切 -10- 201217483 晶固晶薄膜）之槪視圖，圖4 ( b )爲相同膠帶之平面圖’ 圖4 ( c )爲相同膠帶之剖面圖。 如圖4(a) 、 （b)及（c)所示，晶圓加工用膠帶10 具有使經預切割加工之接著薄膜20之圓形接著劑層部12a ，與於基材薄膜14上層合有黏著劑層15之黏著薄膜13的黏 著劑層15貼合而成之構成。 黏著薄膜13具有覆蓋圓形接著劑層部12a且在圓形接 著劑層部12a之周圍與脫模薄膜11接觸之方式設置之圓形 標籤部13a，與包圍該圓形標籤部13a外側之周邊部13b。 周邊部13b包含完全包圍圓形標籤部13 a外側之形態’及如 圖示之完全未包圍之形態。圓形標籤部1 3 a具有對應於切 晶用之圓形框架之形狀。 經預切割加工之晶圓加工用膠帶1 0首先係如圖2及圖3 所示，製作將圓形接著劑層部1 2 a層合於脫模薄膜1 1上之 狀態的接著薄膜20。隨後，使黏著劑層1 5與圓形接著劑層 部12a重疊之方式，加熱並貼合黏著薄膜13與接著薄膜20 ，於黏著薄膜13上切入切口’剝離不要的黏著薄膜13而形 成圓形標鐵部133與周邊部13b ’藉此製作預切割加工之晶 圓加工用膠帶〗0。 又，亦可將黏著薄膜13切斷成圓形標籤部13a與周邊 部1 3b之形狀後，藉由加熱並貼合經預切割加工之接著薄 膜20與圓形標籤部13a及周邊部13b藉此製作經預切割加工 之晶圓加工用膠帶1 0。 本實施形態之晶圓加工用膠帶1 〇由於使用上述之本實 -11 - 201217483 施形態之接著薄膜20B製作，故具有與上述本實施形態之 接著薄膜20B相同之特徵。亦即，相對於接著劑層12自脫 模薄膜11之每單位剝離力，接著劑層12之每同一單位之斷 裂強度爲87.5倍以上，較好爲1〇〇倍以上。 以下針對本實施形態之接著薄膜20B及本實施形態之 晶圓加工用膠帶1 0之各構成要素加以詳細說明。 (脫模薄膜） 脫模薄膜11使用之目的爲使接著劑層12之操作性良好 〇 脫模薄膜1 1係使用例如聚乙烯薄膜、聚丙烯薄膜、聚 丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯化乙烯 薄膜、氯化乙烯共聚物薄膜、聚對苯二甲酸乙二酯薄膜、 聚萘二甲酸乙二酯薄膜、聚對苯二甲酸丁二酯薄膜、聚胺 基甲酸酯薄膜、乙烯•乙酸乙烯酯共聚物薄膜、離子聚合 物樹脂薄膜、乙烯·（甲基）丙烯酸共聚物薄膜、乙烯· (甲基）丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯 薄膜、聚醯亞胺薄膜、氟樹脂薄膜等。且亦可使用該等之 交聯薄膜。再者亦可使用該等之層合薄膜。 脫模薄膜11之表面張力較好爲40mN/m以下，更好爲 3 5 mN/m以下。該種表面張力低之脫模薄膜11可選擇適當 材質而獲得，且亦可在薄膜表面塗佈矽氧樹脂等施以脫模 處理而獲得》 脫膜薄膜11之膜厚通常爲5~300ym，較好爲10~200v -12- 201217483 m，最好爲20〜150// m左右。 脫膜薄膜1 1 A只要是可自接著劑層1 2剝離即無特別限 制’但較好爲聚對苯二甲酸乙二酯薄膜、聚丙烯薄膜、聚 乙烯薄膜。且，脫膜薄膜丨丨A較好爲塗佈矽氧或經烙印。 脫膜薄膜11A之厚度並無特別限制，但較好爲15〜125 μ ^ (接著劑層） 接著劑層1 2爲貼合半導體晶圓等並經切晶後，拾取半 導體晶粒時’附著於半導體晶粒之背面，將晶粒固定在基 板或導線架上之際作爲接著劑使用者。 至於接著劑層1 2可使用聚醯亞胺樹脂、聚醯胺樹脂、 聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹脂、聚酯樹 脂、聚酯醯亞胺樹脂、苯氧樹脂、聚颯樹脂、聚醚颯樹脂 、聚苯硫醚樹脂、聚醚酮樹脂、氯化聚丙烯樹脂、丙烯酸 樹脂、聚胺基甲酸酯樹脂、環氧樹脂、聚丙烯醯胺樹脂、 三聚氫胺樹脂等或其混合物。 至於聚合物，較好使用含有環氧基之丙基酸共聚物。 該含有環氧基之丙基酸共聚物含有0.5〜6質量％之具有環氧 基之丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯。爲了獲 得與半導體晶圓之高接著力，較好爲0.5質量％以上，若控 制在6質量％以下則可抑制凝膠化。上述含有環氧基之丙烯 酸共聚物之玻璃轉移溫度（Tg )較好爲-1 〇 °c以上3 0 °C以 下。 -13- 201217483 作爲官能基單體使用之丙烯酸縮水甘油酯或 酸縮水甘油酯之量爲0.5〜6質量％之共聚物比，但 可使用丙烯酸甲酯、甲基丙烯酸甲酯等具有碳婁 基之丙烯酸烷酯、甲基丙烯酸烷酯、及苯乙烯或 之混合物。該等中以（甲基）丙烯酸乙酯及/或 丙烯酸丁酯最佳。混合比率較好考慮共聚物之玻 度（Tg )而調整。聚合方法並無特別限制，列舉 珠聚合（pearl polymerization )、溶液聚合等， 方法獲得共聚物。該等含有環氧基之丙烯酸酯共 爲例如 HTR-860P-3 (Nagase Chemtex股份有限 ，商品名）。 丙烯酸系共聚物之重量平均分子量爲五萬以 爲2〇萬〜100萬之範圍。分子量太低時薄膜形成不 高時與其他成分之相溶性變差，結果妨礙薄膜形j 使用環氧樹脂作爲熱硬化性成分時，可使用 樹脂作爲硬化劑。至於酚系樹脂可無特別限制的 酚、多價酚、萘酚等酚類與醛類之縮合物。該等 中所含之酚性羥基藉由與環氧樹脂之環氧基加熱 行加成反應，可形成耐衝擊性高之硬化物。 酚系樹脂較好使用酚酚醛樹脂、鄰-甲酚酚 對-甲酚酚醛樹脂、第三丁基酚酚醛樹脂、二環 酚樹脂、聚對乙烯酚樹脂、雙酚A型酚醛樹脂、 之改質物等。 另外’可使用熱活性型潛在性環氧樹脂硬化 甲基丙烯 其餘部分 :1〜8之烷 丙烯腈等 (甲基） 璃轉移溫 爲例如珍 藉由該等 聚物列舉 公司製造 上，最好 充分，太 K。 例如酚系 使用烷基 酚系樹脂 容易地進 酸樹脂、 戊二烯甲 或者該等 劑作爲硬 -14 - 201217483 化劑。該硬化劑爲在室溫不與環氧樹脂反應，藉由在某一 溫度以上加熱而活性化，並與環氧樹脂反應之類型的硬化 劑。 活性化方法存在有藉由加熱生成於化學反應之活性物 種（陰離子、陽離子）之方法；在室溫附近安定地分散於 環氧樹脂中而在高溫與環氧樹脂相溶•溶解，並開始硬化 反應之方法；藉由分子篩封入類型之硬化劑在高溫溶出並 開始硬化反應之方法：利用微膠囊之方法等。 熱活性型潛在性環氧樹脂硬化劑可列舉爲各種鎗鹽， 或二鹼酸二醯肼化合物、二氰基二醯胺、胺加成物硬化劑 、咪唑化合物等高熔點活性氫化合物等。 使用環氧樹脂作爲熱硬化性成分時，亦可使用硬化促 進劑等作爲助劑。本發明中可使用之硬化促進劑並無特別 限制’可使用例如三級胺、咪唑類、四級銨鹽等。本發明 中可較好使用之咪唑類列舉爲例如2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基 咪唑鑰偏苯三酸鹽等。該等可使用一種亦可倂用兩種以上 。咪唑類爲例如由四國化成工業（股）以2E4MZ、2PZ-CN 、2PZ-CNS之商品名銷售。 又’亦可調配塡料。至於塡料舉例有結晶二氧化矽、 合成二氧化砍等二氧化砂，或氧化銘、玻璃球等無機塡料 。藉由於硬化性保護膜形成層2中添加無機塡料，可改善 硬化後之保護膜硬度。且，可使硬化後之保護膜之熱膨脹 係數接近於晶圓之熱膨脹係數，藉此可降低加工過程中半 -15- 201217483 導體晶圓之翹曲。塡料較好爲合成二氧化矽，尤其是 消除成爲半導體裝置誤動作之要因之α線之射線源之 的合成二氧化矽最適用。塡料之形狀亦可使用球形、 、無定型類型者之任一種，但最好爲可最密實充塡之 塡料。 另外，爲了使異種材料間之界面結合良好，亦可 偶合劑。偶合劑較好爲矽烷偶合劑。至於矽烷偶合劑 爲r-縮水甘油氧基丙基三甲氧基矽烷、r-毓基丙基 氧基矽烷、r-胺基丙基三乙氧基矽烷、r-脲基丙基 氧基矽烷、N-/3-胺基乙基-r-胺基丙基三甲氧基矽烷 偶合劑之調配量就添加產生之效果或耐熱性及成本而 相對於形成分散相與連續相各別組成物之合計1 〇〇重 ，較好添加0.1 ~1〇重量份。 又，漆料化之溶劑較好使用沸點較低之甲基乙基 丙酮、甲基異丁基酮、2-乙氧基乙醇、甲苯、丁基溶 、甲醇、乙醇、2-甲氧基乙醇等。又，就改善塗膜性 地，亦可添加高沸點溶劑。高沸點溶劑列舉爲二甲基 胺、二甲基甲醯胺、甲基吡咯啶酮、環己酮等。201217483 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an adhesive tape for film and wafer processing. In particular, it relates to a film for wafer processing followed by a film and a laminated crystal-cut film having both functions of a dicing tape and a die-bonding film. [Prior Art] Recently, a dicing tape for fixing a semiconductor wafer at the time of separating (cutting) a semiconductor into individual dies has been developed, and the semiconductor dies to be cut are attached to a lead frame or package. On a substrate or the like, or in a stacked package, a dicing solid crystal film (DDF) for laminating semiconductor crystal grains to each other and then a film (also referred to as a solid crystal film or a die-bonding film) ). Such a crystal-cut solid-crystal film considers the workability of attaching to a semiconductor wafer or mounting a circular frame during dicing, and the dicing process is performed by a pre-cutting machine. The tape for processing a wafer of a die-bonded film is formed on the adhesive layer of the adhesive film formed by laminating an adhesive layer on the entire surface of the elongated release film to correspond to a semiconductor, as described in, for example, Patent Document 1. The circular blade edge of the wafer is cut into the slit, and the outer side of the circular portion is peeled off from the release film and taken up (hereinafter referred to as the winding step of the adhesive layer), and the circle is controlled by the winding step of the adhesive layer. The adhesive layer of the film and the adhesive layer of the dicing tape formed by laminating the adhesive layer on the substrate film are heat-pressed and bonded to correspond to the round shape of the round-shaped tape of the 201217483 frame. The slit is cut into, and the portion corresponding to the circular frame is peeled off and taken up. [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2007-2 173 SUMMARY OF INVENTION [Problem to be Solved by the Invention] In the winding step of the above-mentioned adhesive layer, a certain force is applied thereto. On the adhesive layer on the outer side of the circular portion, the adhesive layer on the outer side of the circular portion was peeled off from the release film and wound up. Therefore, during the operation of the adhesive layer winding step, the phenomenon that the adhesive layer on the outer side of the circular portion is cut is generated. In order to wind up the adhesive layer, the initial operation of fixing the end portion of the adhesive layer to the winding roller is performed, and when the adhesive layer is cut, it is necessary to temporarily terminate the winding operation of the adhesive layer. It is reopened after the initial work, and there is a problem that the productivity of the wafer processing tape having the diced solid crystal film which is subjected to pre-cut processing is lowered. Further, if the width of the wafer processing tape is widely removed in order to solve the above problem, the adhesive layer on the outer side of the circular portion is not cut in the adhesive layer winding step, but it may cause The amount of the adhesive layer on the outer side of the unnecessary circular portion, or the amount of the wafer processing tape which is not required in the dicing of the semiconductor wafer or the solid crystal dicing crystal of the semiconductor is increased. Therefore, the present invention has been made in order to solve the above problems, and an object thereof is to provide a self-release film peeling when a wafer for processing a wafer which is pre-cut to a shape corresponding to the shape of a semiconductor wafer-6-201217483 is produced. In the step of not requiring the adhesive layer and winding up, the adhesive film which prevents the wound adhesive layer from being broken, and the productivity of the pre-cut processed wafer processing tape, and the crystal prepared by using the adhesive film can be improved. Tape for round processing. [Means for Solving the Problem] As a result of a positive review of the above problems, the present inventors have found that the breaking strength per unit of the adhesive layer is obtained by using the peeling force per unit with respect to the release film from the adhesive layer. The adhesive film of 8 7.5 times or more, preferably 1 〇〇 or more, can prevent the side adhesive layer of a specific shape from being formed in the adhesive layer winding step of preparing the pre-cut processed wafer processing tape Further, it was found that the adhesive layer of the adhesive layer of the adhesive film and the adhesive film of the adhesive film were bonded, and the productivity of the pre-cut processed wafer processing tape was improved, and thus the present invention was completed. That is, the adhesive film according to the first aspect of the present invention is an adhesive film in which an adhesive layer is laminated on the long release film, and is characterized in that each unit of the release film is peeled off from the release film. For the force, the breaking strength per unit of the above-mentioned adhesive layer is 8 7.5 times or more. Here, the peeling force changes with the magnitude perpendicular to the peeling direction, and the breaking strength changes with the magnitude of the stretching direction. Therefore, the "same unit" is such that the size in the direction perpendicular to the peeling direction is the same as the magnitude of the stretching direction (for example, when the size in the direction perpendicular to the peeling direction is 10 mm and the peeling force is measured) The breaking strength was measured by setting the magnitude of the stretching direction to 1, and it was characterized in that the breaking strength with respect to the peeling of 201217483 at this time was 8 7.5 times or more. Further, the film may be an adhesive film which is previously cut into the adhesive layer state in accordance with the slit of the semiconductor wafer as described above, or may be a film which is not cut into the adhesive layer. The adhesive film according to the second aspect of the present invention is the same unit of the above-mentioned adhesive layer in the adhesive film according to the first aspect of the present invention, and the same unit of the adhesive layer per unit peeling force from the adhesive layer. The breaking strength is 100 times or more. The tape for wafer processing according to the first aspect of the present invention is characterized in that the adhesive layer of the adhesive film on which the adhesive film is laminated on the base film and the adhesive film of the first or second aspect of the present invention described above are used. Next, the agent layer is bonded. [Effect of the Invention] By using the adhesive film of the present invention, it is not necessary to peel off the release film when preparing a wafer processing tape which is pre-cut to a specific shape corresponding to the shape of the semiconductor wafer. In the step of taking up the outer layer of the adhesive layer and winding the adhesive layer, the rupture of the side adhesive layer outside the specific shape can be prevented. Further, the adhesive layer of the adhesive layer of the pre-cut film can be improved by bonding the adhesive layer of the adhesive layer of the adhesive film to the adhesive layer of the adhesive film. Further, it is possible to produce a crystal having a small amount of a side adhesive layer in a specific shape, or a crystal of a semiconductor wafer, a solid crystal dicing of a semiconductor, or the like, which has a small amount of a wafer processing tape and a good production efficiency. Tape for round processing. [Embodiment] -8 - 201217483 Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 1 (a) is a top view of a film according to an embodiment of the present invention, and Fig. 1 (b) is a cross-sectional view of the same film. As shown in Fig. 1 (a) and Fig. 1 (b), the film 20B is formed by laminating the adhesive layer 12 on the elongated release film 1 1 . Further, in the present embodiment, the release film 1 1 A is further laminated on the adhesive layer 1 2, and the film is a film which can be wound into a roll. Further, the release film described in the patent application scope corresponds to the release film 11 . In the manufacturing step of the semiconductor device, the adhesive layer 12 of a circular label shape corresponding to the shape of the semiconductor wafer is a pre-cut processed film 20 (see, for example, Fig. 4 (c)). Therefore, a method of fabricating the pre-cut film 2 〇 will be described below with reference to Figs. 2 and 3 . Fig. 2 (a) is a plan view showing the film 20A of the slit forming step in which the slit is formed in the circular label shape of the adhesive layer 12, and (b) is a cross-sectional view of the same film. Fig. 3 is a schematic view for explaining a step of winding up the adhesive layer which is peeled off from the release film 11 to the outer side of the circular label shape and which is wound up. The pre-cut film 20 is produced by first peeling the release film 1 1 A from the film 20B to form a film 20A (see Fig. 1 (b)). Next, as shown in FIGS. 2(a) and (b), in the subsequent film 2A, a slit 22 having a circular label shape corresponding to the shape of the semiconductor wafer is formed on the adhesive layer 12 (the formation of the slit 22) step). By the slit 22, the adhesive layer 12 is cut into a circular label-shaped adhesive 201217483 layer (hereinafter referred to as a circular adhesive layer portion) 12a inside the slit 22, and a coating layer outside the slit 22 (hereinafter It is called a peripheral adhesive layer portion 12b. Here, the slit is formed from the surface 23a of the adhesive layer 12 to the inner surface 23b of the adhesive layer 12 which is in contact with the release film. Finally, as shown in Fig. 3, in the film 20A, a certain force is applied to the peripheral layer portion 12b, and the film is released from the film! The peeling and winding of the next layer layer portion 1 2b is a circle in which only the excavation is left on the release film 1 1 and the agent layer portion 12a (the winding step of the adhesive layer). According to this, the adhesive film 12 is formed by pre-cutting into a film 20 having a circular label shape corresponding to the shape of the semiconductor wafer. The adhesive film 20B of the present embodiment has the following constitutional aspects. When the release layer 12 is peeled off from the release film 11, the breaking strength per unit of the adhesive layer 12 is 8 7.5 times, preferably 1 〇〇 or more, per unit peeling force. Here, the peeling force varies with the direction perpendicular to the peeling direction, and the breaking strength changes with the magnitude of the stretching direction. Therefore, the "same unit" is a case where the size in the direction perpendicular to the peeling direction and the magnitude of the stretching direction are the same. For example, when the peeling force is measured by setting the peeling force to be 1 mm in the direction perpendicular to the peeling direction, The strength was measured by setting the magnitude of the stretching direction to 1 〇 mm. Next, a wafer processing adhesive (cut crystal solid crystal film) in which an adhesive layer of a film is bonded to an adhesive layer of an adhesive film of a pressure-sensitive adhesive layer on a base film will be described. Fig. 4 (a) is a view showing the tape for wafer processing according to an embodiment of the present invention (the shape of the 22 11 agent is formed by cutting the fracture layer of the fracture layer - -10-201217483 crystal solid crystal film). Figure 4 (b) is a plan view of the same tape. Figure 4 (c) is a cross-sectional view of the same tape. As shown in FIGS. 4(a), (b) and (c), the wafer processing tape 10 has a circular adhesive layer portion 12a of a pre-cut processed film 20 laminated on the base film 14. The adhesive layer 15 having the adhesive film 13 of the adhesive layer 15 is laminated. The adhesive film 13 has a circular label portion 13a which is provided to cover the circular adhesive layer portion 12a and is in contact with the release film 11 around the circular adhesive layer portion 12a, and a periphery surrounding the outer side of the circular label portion 13a. Part 13b. The peripheral portion 13b includes a form that completely surrounds the outer side of the circular label portion 13a and a form that is completely unenclosed as shown. The circular label portion 1 3 a has a shape corresponding to a circular frame for dicing. The pre-cut processed wafer processing tape 10 is first formed as shown in Figs. 2 and 3, and a bonding film 20 in a state in which a circular adhesive layer portion 1 2 a is laminated on the release film 1 1 is produced. Subsequently, the adhesive film 15 is superposed on the circular adhesive layer portion 12a, and the adhesive film 13 and the adhesive film 20 are heated and bonded, and the slit is cut into the adhesive film 13 to peel off the unnecessary adhesive film 13 to form a circular shape. The target portion 133 and the peripheral portion 13b' are used to produce a pre-cut wafer processing tape 0. Further, after the adhesive film 13 is cut into the shape of the circular label portion 13a and the peripheral portion 13b, the pre-cut film 20 and the circular label portion 13a and the peripheral portion 13b may be borrowed by heating and bonding. This is a pre-cut processed wafer processing tape 10 . The wafer processing tape 1 of the present embodiment has the same features as the subsequent film 20B of the above-described embodiment, since it is produced by using the adhesive film 20B of the above-described embodiment of the present invention. That is, the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 1 time or more, per unit peeling force from the release film 11 with respect to the adhesive layer 12. Hereinafter, each constituent element of the adhesive film 20B of the present embodiment and the wafer processing tape 10 of the present embodiment will be described in detail. (Release film) The purpose of the release film 11 is to improve the workability of the adhesive layer 12. The release film 11 is, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, or the like. Polymethylpentene film, polyvinyl chloride film, chlorinated ethylene copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, poly A urethane film, an ethylene/vinyl acetate copolymer film, an ionic polymer resin film, an ethylene/(meth)acrylic copolymer film, an ethylene·(meth)acrylate copolymer film, a polystyrene film, A polycarbonate film, a polyimide film, a fluororesin film, or the like. These crosslinked films can also be used. Further, such laminated films can also be used. The surface tension of the release film 11 is preferably 40 mN/m or less, more preferably 3 5 mN/m or less. Such a release film 11 having a low surface tension can be obtained by selecting a suitable material, and can also be obtained by applying a deuterium resin or the like to a release treatment on the surface of the film. The film thickness of the release film 11 is usually 5 to 300 μm. It is preferably from 10 to 200 v -12 to 201217483 m, preferably about 20 to 150 // m. The release film 1 1 A is not particularly limited as long as it can be peeled off from the adhesive layer 12, but is preferably a polyethylene terephthalate film, a polypropylene film or a polyethylene film. Moreover, the release film 丨丨A is preferably coated with oxygen or branded. The thickness of the release film 11A is not particularly limited, but is preferably 15 to 125 μ ^ (adhesive layer). The subsequent layer 12 is bonded to a semiconductor wafer or the like, and is etched to pick up the semiconductor crystal grains. As the adhesive user, the die is fixed on the substrate or the lead frame on the back side of the semiconductor die. As the adhesive layer 12, a polyimide resin, a polyamide resin, a polyether phthalimide resin, a polyamide amide resin, a polyester resin, a polyester resin, a polyester quinone resin, a benzene can be used. Oxygen resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polypropylene guanamine resin, A trihydroamine resin or the like or a mixture thereof. As the polymer, a propyl acid copolymer containing an epoxy group is preferably used. The epoxy group-containing propyl acid copolymer contains 0.5 to 6% by mass of an epoxy group-containing glycidyl acrylate or glycidyl methacrylate. In order to obtain a high adhesion to the semiconductor wafer, it is preferably 0.5% by mass or more, and if it is controlled to 6% by mass or less, gelation can be suppressed. The glass transition temperature (Tg) of the above epoxy group-containing acrylic copolymer is preferably -1 〇 °c or more and 30 ° C or less. -13- 201217483 The amount of glycidyl acrylate or acid glycidyl acrylate used as a functional group monomer is 0.5 to 6 mass%, but a carbon sulfhydryl group such as methyl acrylate or methyl methacrylate can be used. Alkyl acrylate, alkyl methacrylate, and styrene or a mixture thereof. Among these, ethyl (meth)acrylate and/or butyl acrylate are preferred. The mixing ratio is preferably adjusted in consideration of the glass (Tg) of the copolymer. The polymerization method is not particularly limited, and a copolymer is obtained by a method such as pearl polymerization or solution polymerization. The epoxy group-containing acrylates are, for example, HTR-860P-3 (Nagase Chemtex Co., Ltd., trade name). The acrylic copolymer has a weight average molecular weight of 50,000 to 200,000 to 1,000,000. When the molecular weight is too low, the compatibility with other components is deteriorated when the film formation is not high, and as a result, when the epoxy resin is used as the thermosetting component, the resin can be used as the curing agent. As the phenol resin, a condensate of a phenol such as a phenol, a polyvalent phenol or a naphthol and an aldehyde can be used without particular limitation. The phenolic hydroxyl group contained in these resins is subjected to an addition reaction with an epoxy group of an epoxy resin to form a cured product having high impact resistance. The phenolic resin is preferably a phenol novolac resin, o-cresol phenol p-cresol novolak resin, a third butyl phenol phenol resin, a dicyclophenol resin, a poly p-vinyl phenol resin, a bisphenol A phenol resin, and the like. Quality and so on. In addition, the heat-active latent epoxy resin can be used to harden the rest of the methacrylic acid: 1 to 8 of alkene acrylonitrile, etc. (Methyl) The transfer temperature of the glass is, for example, exemplified by the company of the above-mentioned polymer, preferably Full, too K. For example, a phenol type is preferably an acid phenol resin, a pentadiene group or an acid phenol resin, or a hardener. The hardener is a type of hardener which does not react with an epoxy resin at room temperature, is activated by heating at a temperature above a certain temperature, and reacts with an epoxy resin. The activation method has a method of generating an active species (anion, a cation) formed by a chemical reaction by heating; it is stably dispersed in an epoxy resin at room temperature, is soluble in an epoxy resin at a high temperature, dissolves, and starts to harden. A method of reacting; a method of dissolving at a high temperature by a molecular sieve-sealed type hardener and starting a hardening reaction: a method using a microcapsule or the like. Examples of the thermally active latent epoxy resin hardeners include various gun salts, or dibasic acid diterpene compounds, dicyanodiamide, amine adduct hardeners, and high melting active hydrogen compounds such as imidazole compounds. When an epoxy resin is used as the thermosetting component, a curing accelerator or the like may be used as an auxiliary agent. The hardening accelerator which can be used in the present invention is not particularly limited. For example, a tertiary amine, an imidazole, a quaternary ammonium salt or the like can be used. The imidazoles which can be preferably used in the present invention are exemplified by, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl- 2-phenylimidazole key trimellitate or the like. These may be used in one type or in combination of two or more types. The imidazoles are sold, for example, under the trade names of 2E4MZ, 2PZ-CN, and 2PZ-CNS by Shikoku Chemical Industries Co., Ltd. Also, you can also mix the ingredients. Examples of the materials include crystalline cerium oxide, synthetic dioxide, and the like, or inorganic materials such as oxidized crystals and glass spheres. By adding an inorganic binder to the curable protective film forming layer 2, the hardness of the protective film after hardening can be improved. Moreover, the thermal expansion coefficient of the cured protective film can be made close to the coefficient of thermal expansion of the wafer, thereby reducing the warpage of the conductor wafer during processing. The antimony is preferably a synthetic cerium oxide, and in particular, a synthetic cerium oxide which is a source of the alpha line which is a cause of malfunction of a semiconductor device is most suitable. The shape of the dip material may also be any one of a spherical type and an amorphous type, but it is preferably the most densely packed material. Further, in order to make the interface between the dissimilar materials good, a coupling agent may be used. The coupling agent is preferably a decane coupling agent. The decane coupling agent is r-glycidoxypropyltrimethoxydecane, r-mercaptopropyloxydecane, r-aminopropyltriethoxydecane, r-ureidopropyloxydecane, The blending amount of the N-/3-aminoethyl-r-aminopropyltrimethoxydecane coupling agent is added to the total effect of forming the dispersed phase and the continuous phase component by the effect of adding the added heat or the cost and the cost. 1 〇〇 heavy, preferably added 0.1 ~ 1 〇 by weight. Further, as the solvent for lacquering, methyl ethyl acetonate, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl solution, methanol, ethanol, 2-methoxyethanol or the like having a relatively low boiling point is preferably used. Further, in order to improve the coating property, a high boiling point solvent may be added. The high boiling point solvent is exemplified by dimethylamine, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.
接著劑層12之厚度可適宜設定，但較好爲5〜100/Z 右。 爲提高接著劑層12之斷裂強度，以增多聚合物， 塡料、減少環氧樹脂（固體成分）爲有效。另外，就 接著劑層12自脫膜薄膜11之剝離力而言’以減少聚合 減少環氧樹脂（液狀）爲有效。 極力 類型 針狀 球形 調配 列舉 三甲 三乙 等。 言， 量份 酮、 纖劑 等目 乙醯 m左 漸少 降低 物， -16- 201217483 (黏著薄膜） 黏著薄膜1 3並無特別限制，只要是具有切割半導體晶 圓時不會使半導體晶圓剝離之充分黏著劑，且切割後拾取 晶粒時顯示可輕易地自接著劑層1 2剝離之低黏著力者即可 。例如，可使用將黏著劑層15設置於基材薄膜14上者。 黏著薄膜13之基材薄膜14只要是過去習知者即可無特 別限制的使用，但使用輻射線硬化性材料作爲後述之黏著 劑層1 5時，較好使用具有輻射線透過性者。 例如，作爲其材料，可列舉有聚乙烯、聚丙烯、乙 基-丙烯共聚物、聚丁烯-1、聚_4_甲基戊烯-1、乙烯-乙酸 乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯·丙烯酸甲 酯共聚物、乙烯-丙烯酸共聚物、離子聚合物等之α-烯烴 之均聚物或共聚物或者該等之混合物；聚胺基甲酸酯、苯 乙烯-乙烯-丁烯或戊烯系共聚物；聚醯胺-多元醇共聚物等 熱可塑性彈性體，及該等之混合物。又基材薄膜1 4可爲混 合由該等群組所選出之兩種以上材料而成者，亦可爲使該 等以單層或多層化而成者。 基材薄膜1 4之厚度並無特別限制，可適宜設定，但較 好爲50〜200# m。 黏著薄膜1 3之黏著劑層1 5中使用之樹脂並無特別限制 ’可使用黏著劑中使用之習知氯化聚丙烯樹脂、丙稀酸樹 脂、聚酯樹脂、聚胺基甲酸酯樹脂、環氧樹脂等。 黏著劑層1 5之樹脂較好爲調製適宜調配丙烯酸系黏著 -17- 201217483 劑、輻射線聚合性化合物 '光聚合起始劑、硬化劑等而成 之黏著劑。黏著劑層1 5之厚度並無特別限制，適宜設定即 可，但較好爲5~30/zm。 於黏著劑層1 5中調配輻射線聚合性化合物並經輻射線 硬化可易於自接著劑層1 2剝離。該輻射線聚合性化合物係 使用例如藉由光照射而三次元網狀化之分子內至少具有兩 個以上之光聚合性碳-碳雙鍵之低分子量化合物。 具體而言可使用三羥甲基丙烷三丙烯酸酯、季戊四醇 三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五 丙烯酸酯、二季戊四醇六丙烯酸酯、1，4-丁二醇二丙烯酸 酯、1，6-己二醇二丙烯酸酯.、聚乙二醇二丙烯酸酯、或寡 聚酯丙烯酸酯等。 又，除上述之丙烯酸酯系化合物以外，亦可使用胺基 甲酸酯丙烯酸酯系寡聚物。胺基甲酸酯丙烯酸酯系寡聚物 爲於使聚酯型或聚醚型等之多元醇化合物與多價異氰酸酯 化合物（例如，2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸 酯、1，3-二甲苯二異氰酸酯、1，4-二甲苯二異氰酸酯、二 苯基甲烷4,4-二異氰酸酯等）反應獲得之末端異氰酸酯胺 基甲酸酯預聚物中，使具有羥基之丙烯酸酯或甲基丙烯酸 酯（例如，丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、 丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙 烯酸酯、聚乙二醇甲基丙烯酸酯等）反應而獲得。 黏著劑層15亦可爲混合選自上述樹脂之兩種以上而成 者。 -18- 201217483 使用光聚合起始劑時’可使用例如異丙基苯偶因醚、 異丁基苯偶因醚、二苯甲酮、米氏（Michler，s)酮、氯噻 噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮、 节基二甲基縮酮、〇：-經基環己基苯基酮、2 -經基甲基苯基 丙烷等。該等光聚合起始劑之調配量相對於丙烯酸系共聚 物100質量份較好爲〇.〇1〜5質量份。 (實施例） 以下，針對本發明實施例加以說明，但本發明並不限 於該等實施例。 (接著薄膜之製作） 於下述表1中所示調配之接著劑層組成物1 A〜1 D中添 加甲基乙基酮，並攪拌混合製作接著劑漆料。將製作之接 著劑層組成物1 A〜1 D之接著劑漆料，以表2及表3所示之組 合，以乾燥後之厚度成爲20"m之方式塗佈於脫膜薄膜η 上，在1 1 0 °C乾燥3分鐘，於各脫膜薄膜1 1上製作接著劑層 12。接著，於各接著劑層12上，貼合與上述同樣之另一脫 膜薄膜11A，製作下述表2所示之實施例1〜4及下述表3所示 之比較例1〜4中之以脫膜薄膜1 1與接著劑層1 2及脫膜薄膜 11A之順序層合之三層構成之接著薄膜20B。 -19- 201217483 〔表1〕 接著劑層組成物 1A 1B 1C 1D A1 (丙烯酸聚合物） 6 15 44 63 B1 (環氧樹旨（固體）） 11 5 15 12 B2 (環氧樹脂（液狀）） 9 15 5 1 C1 (硬化劑⑴） 1.5 0 0 0 C2 (硬化劑（2)) 0 12 15 13 D1 (硬化促進劑） 0.1 1 1 1 E1 (二氧化矽塡料） 70 53 20 9 表1中各成分之調配比例單位爲質量份。又，表1中之 A1 (丙烯酸系聚合物）爲重量平均分子量85萬，玻璃轉 移溫度（Tg)爲l5〇°C之丙烯酸系共聚物。又，B1 (環氧 樹脂（固體））爲環氧當量265〜2 85之酚伸聯苯型環氧樹 脂。另外，B2 (環氧樹脂（液狀））爲環氧當量ι62~172 之液狀雙酣A型環氧樹脂。又，ci (硬化劑（1))爲二氰 二醯胺，C2(硬化劑（2))爲芳烷基酚樹脂。又，di ( 硬化促進劑）爲咪哩化合物（2苯基4,5二經基甲基咪哩 )。另外’ E1 (二氧化砂塡料）爲平均粒徑之球狀合 成二氧化矽。 -20- 201217483 〔表2〕 實施例1 實施例2 實施例3 實施例4 接著劑層組成物 1C 1C 1D 1D 接著劑層厚度（//m) 20 20 20 20 脫模薄膜 S314 K-1504 S314 K-1504 斷裂強度（N/10mm) 2.4 2.4 3.6 3.6 剝離力（N/10mm) 0.016 0.024 0.016 0.024 斷裂強度/剝離力 150 100 225 150 預切割性（390rmn) 〇 〇 〇 〇 預切割性（450mm) 〇 〇 〇 〇 〔表3〕The thickness of the layer 12 may be suitably set, but is preferably 5 to 100/Z right. In order to increase the breaking strength of the adhesive layer 12, it is effective to increase the amount of the polymer, the coating, and the epoxy resin (solid content). Further, it is effective to reduce the polymerization reducing epoxy resin (liquid state) in terms of the peeling force of the subsequent agent layer 12 from the release film 11. The most powerful type of needle-shaped spherical arrangement is listed as three-three, three-three and so on. The sufficient adhesive is peeled off, and when the crystal grains are picked up after cutting, the low adhesion which can be easily peeled off from the adhesive layer 12 is displayed. For example, the adhesive layer 15 may be provided on the base film 14. The base film 14 of the adhesive film 13 is not particularly limited as long as it is conventionally used. However, when a radiation curable material is used as the adhesive layer 15 to be described later, it is preferred to use a radiation-transmitting property. For example, examples of the material thereof include polyethylene, polypropylene, ethyl-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid. a homopolymer or copolymer of an α-olefin such as an ethyl ester copolymer, an ethylene methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer, or the like; or a mixture thereof; a polyurethane, styrene- An ethylene-butene or pentene copolymer; a thermoplastic elastomer such as a polyamine-polyol copolymer, and mixtures thereof. Further, the base film 14 may be a mixture of two or more materials selected from the group, or may be formed by a single layer or a plurality of layers. The thickness of the base film 14 is not particularly limited and may be appropriately set, but is preferably 50 to 200 #m. The resin used in the adhesive layer 15 of the adhesive film 13 is not particularly limited. The conventional chlorinated polypropylene resin, acrylic resin, polyester resin, and polyurethane resin used in the adhesive can be used. , epoxy resin, etc. The resin of the adhesive layer 15 is preferably an adhesive prepared by preparing an acrylic adhesive -17-201217483, a radiation-polymerizable compound 'photopolymerization initiator, a hardener, and the like. The thickness of the adhesive layer 15 is not particularly limited and may be appropriately set, but is preferably 5 to 30/zm. The radiation polymerizable compound is formulated in the adhesive layer 15 and is hardened by radiation to be easily peeled off from the adhesive layer 12. The radiation polymerizable compound is a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which is three-dimensionally networked by light irradiation. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1 can be used. , 6-hexanediol diacrylate, polyethylene glycol diacrylate, or oligoester acrylate, and the like. Further, in addition to the above acrylate-based compound, an urethane acrylate-based oligomer can also be used. The urethane acrylate oligomer is a polyol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate or 2,6-toluene diisocyanate, Acetic acid having a hydroxyl group in a terminal isocyanate urethane prepolymer obtained by reacting 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate, diphenylmethane 4,4-diisocyanate or the like Ester or methacrylate (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene Obtained by reaction of diol methacrylate or the like. The adhesive layer 15 may be a mixture of two or more selected from the above resins. -18- 201217483 When using a photopolymerization initiator, 'for example, isopropyl benzoine ether, isobutyl benzoin ether, benzophenone, Michler s ketone, chlorothioxanthone, Dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyl ketal, hydrazine:-cyclohexyl phenyl ketone, 2-methylmethyl phenyl propyl ketone Wait. The amount of the photopolymerization initiator to be added is preferably from 1 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer. (Embodiment) Hereinafter, the embodiments of the present invention will be described, but the present invention is not limited to the embodiments. (Preparation of film) The methyl ethyl ketone was added to the adhesive layer compositions 1 A to 1 D formulated as shown in the following Table 1, and stirred and mixed to prepare an adhesive paint. The adhesive composition of the adhesive layer composition 1 A to 1 D to be produced is applied to the release film η in a combination of the thickness shown in Table 2 and Table 3 after drying to a thickness of 20 " The adhesive layer 12 was formed on each of the release films 1 1 by drying at 110 ° C for 3 minutes. Next, another release film 11A similar to the above was bonded to each of the adhesive layers 12, and Comparative Examples 1 to 4 shown in Table 2 below and Comparative Examples 1 to 4 shown in Table 3 below were produced. The film 20B is composed of three layers in which the release film 1 1 and the adhesive layer 1 2 and the release film 11A are laminated in this order. -19- 201217483 [Table 1] Next layer composition 1A 1B 1C 1D A1 (acrylic polymer) 6 15 44 63 B1 (epoxy (solid)) 11 5 15 12 B2 (epoxy resin (liquid) 9 15 5 1 C1 (hardener (1)) 1.5 0 0 0 C2 (hardener (2)) 0 12 15 13 D1 (hardening accelerator) 0.1 1 1 1 E1 (cerium dioxide) 70 53 20 9 The ratio of the proportion of each component in 1 is part by mass. Further, A1 (acrylic polymer) in Table 1 is an acrylic copolymer having a weight average molecular weight of 850,000 and a glass transition temperature (Tg) of 15 °C. Further, B1 (epoxy resin (solid)) is a phenol-extended biphenyl type epoxy resin having an epoxy equivalent of 265 to 2 85. Further, B2 (epoxy resin (liquid)) is a liquid bismuth A type epoxy resin having an epoxy equivalent of ι 62 to 172. Further, ci (hardener (1)) is dicyanamide, and C2 (hardener (2)) is an aralkylphenol resin. Further, di (hardening accelerator) is a bismuth compound (2 phenyl 4,5 dipyridylmethyl oxime). Further, 'E1 (silica dioxide dip) is a spherical synthetic ceria having an average particle diameter. -20-201217483 [Table 2] Example 1 Example 2 Example 3 Example 4 Substitute layer composition 1C 1C 1D 1D Substrate layer thickness (//m) 20 20 20 20 Release film S314 K-1504 S314 K-1504 Breaking Strength (N/10mm) 2.4 2.4 3.6 3.6 Peeling Force (N/10mm) 0.016 0.024 0.016 0.024 Breaking Strength / Peeling Force 150 100 225 150 Precutting Property (390rmn) 〇〇〇〇 Precutting Property (450mm) 〇〇〇〇[Table 3]
比較例1 比較例2 比較例3 比較例4 接著劑層組成物 1A 1A 1B 1B 接著劑層厚度（μm) 20 20 20 20 脫模薄膜 S314 K-1504 S314 K-1504 斷裂強度（N/10mm) 1 1 1.4 1.4 剝離力（N/10mm) 0.012 0.02 0.024 0.036 斷裂強度/剝離力 83.3 50 58.3 38.9 預切割性（390mm) X X X X 預切割性（450mm) 〇 X 〇 X 表2及表3中之S31 4爲經脫模處理之聚對苯二甲酸乙二 酯（PET )薄膜（帝人Dupon Film製造，商品名），K-15 04爲經脫模處理之PET薄膜（東洋紡績公司製造，商品 名）。 針對實施例1〜4及比較例1〜4，測定各斷裂強度、剝離 力，同時進行預切割性之評價。表2及表3中，顯示斷裂強 度、剝離力之測定結果，斷裂強度與剝離力之比（斷裂強 度/剝離力），及預切割性之評價。 -21 - 201217483 〈斷裂強度之測定〉 將在脫模薄膜1 1與脫模薄膜1 1 A之間挾持接著劑層1 2 之狀態之實施例1~4之接著薄膜20B及比較例1〜4之接著薄 膜沖壓成一號啞鈴形狀，剝離脫模薄膜1 1及脫模薄膜1 1 A 製備僅有接著劑層12之試驗片。試驗片之斷裂強度係依據 JIS B 7721、JIS K 6301，使用東洋精機製作所（股）製造 之 STROGRAPH (VE10)，以線速 3 0Omm/miη拉伸，測定 直到斷裂爲止之最大荷重。又，斷裂強度之單位爲〔 Ν/1 Omm〕。 〈剝離力之測定〉 剝離實施例1〜4之接著薄膜20B及比較例1~4之接著薄 膜單面之脫模薄膜11A，以2kg之滾筒將形狀保持膠帶（積 水化學公司製造’商品名：FORTE )貼合於已剝離脫模薄 膜1 1 A之接著劑層12之表面上，切成25mm寬之短條狀，製 作脫模薄膜11與接著劑層12及形狀保持膠帶之順序層合之 三層構成之試驗片。以東洋精機製作所（股）製造之 STROGRAPH ( VE 1 0 )，將製作之試驗片使脫模薄膜11與 接著劑層1 2及形狀保持膠帶之層合體分開並捏住’以線速 300mm/min測定脫模薄膜1 1與接著劑層12之間之剝離力。 又，剝離力之單位爲〔N/10mm〕。又’分開爲脫模薄膜 11，與接著劑層丨2及形狀保持膠帶之層合體之理由’係因 爲自脫模薄膜11剝離接著劑層12及形狀維持膠帶之層合體 -22- 201217483 ，僅捏住接著劑層1 2剝離時，接著劑層1 2伸長之故。 〈預切割性之評價〉 預切割性之評價係針對實施例1〜4之接著薄膜2 0 B及比 較例1〜4之接著薄膜，在剝離單面的脫模薄膜1 1 A而由脫模 薄膜11與接著劑層12所構成之二層構成之接著劑層薄膜 20A上，以58.5mm間隔切出12英吋晶圓用之直徑320mm之 圓形切口，以加工速度lOm/min將周邊接著劑層部12b自脫 模薄膜1 1剝離並捲取1 〇〇m，完全無斷裂之情況評價爲「〇 」，出現斷裂之情況評價爲「X」。又，接著薄膜之整卷 寬度爲3 90mm與45 0m。 如表2所示，實施例1之接著薄膜20B由於斷裂強度與 剝離力之比（斷裂強度/剝離力）爲1 50，在規定斷裂強度 與剝離力之比的上述87.5以上範圍，故預切割性之結果於 整卷寬度爲390mm之情況與450mm之情況均完全未斷裂。 實施例2之接著薄膜20B由於斷裂強度與剝離力之比（ 斷裂強度/剝離力）爲1 〇〇，在規定斷裂強度與剝離力之比 的上述8 7 _ 5以上範圍，故預切割性之結果於整卷寬度爲 3 9 0 m m之情況與4 5 0 m m之情況均完全未斷裂。 實施例3之接著薄膜20B由於斷裂強度與剝離力之比（ 斷裂強度/剝離力）爲22 5，在規定斷裂強度與剝離力之比 的上述8 7 · 5以上範圍，故預切割性之結果於整卷寬度爲 3 9 Omm之情況與45 Omm之情況均完全爲斷裂。 實施例4之接著薄膜20B由於斷裂強度與剝離力之比（ -23- 201217483 斷裂強度/剝離力）爲150’在規定斷裂強度與剝離力之比 的上述8 7.5以上範圍，故預切割性之結果於整卷寬度爲 390mm之情況與450mm之情況均.完全未斷裂。 如表3所示，比較例1之接著薄膜由於斷裂強度與剝離 力之比（斷裂強度/剝離力）爲8 3 · 3 ’在規定斷裂強度與剝 離力之比的上述8 7 · 5以上之範圍之外’故預切割性之結果 於整卷寬度爲450mm之情況完全未斷裂’但於390mm時出 現斷裂。 比較例2之接著薄膜由於斷裂強度與剝離力之比（斷 裂強度/剝離力）爲5〇 ’在規定斷裂強度與剝離力之比之 上述87.5以上之範圍外，故預切割性之結果於整卷寬度爲 3 9 0 m m之情況與4 5 0 m m之情況均出現斷裂。 比較例3之接著薄膜由於斷裂強度與剝離力之比（斷 裂強度/剝離力）爲58.3，在規定斷裂強度與剝離力之比的 上述87.5以上之範圍外，故預切割性之結果於整卷寬度爲 450mm之情況完全未斷裂，但390mm時出現斷裂。 比較例4之接著薄膜由於斷裂強度與剝離力之比（斷 裂強度/剝離力）爲3 8 ·9，在規定斷裂強度與剝離力之比的 上述87.5以上之範圍外，故預切割性之結果於整卷寬度爲 390mm及450mm之情況均出現斷裂。 由表2及表3之結果，藉由使用相對於接著劑層12自脫 模薄膜Π之每單位剝離力’接著劑層12之每同一單位之斷 裂強度爲87.5倍以上’較好爲100倍以上之本實施形態之 接著薄膜20，可防止製作預切割成對應於半導體晶圓形狀 -24- 201217483 之形狀之晶圓加工用膠帶1 〇時之接著劑層捲取步驟中之周 邊接著劑層部1 2b之斷裂。且，可提高使用本實施形態之 接著薄膜20製作經預切割加工之晶圓加工用膠帶10之生產 性。又，可製備成爲不要之周邊接著劑層部12b之量或半 導體晶圓之切晶、半導體切晶固晶等成爲不要之晶圓加工 用膠帶10之量較少且生產效率良好之晶圓加工用膠帶10。 【圖式簡單說明】 圖1 ( a )爲本發明一實施形態之接著薄膜之槪視圖， 圖1 ( b )爲相同薄膜之剖面圖。 圖2 (a)爲用以說明切口形成步驟之接著薄膜之平面 圖，圖2 ( b )爲相同薄膜之剖面圖。 圖3爲用以說明接著劑層之捲取步驟之模式圖。 圖4 ( a )爲本發明一實施形態之晶圓加工用膠帶之槪 視圖，圖4(b)爲相同膠帶之平面圖，圖4(c)爲相同膠 帶之剖面圖。 【主要元件符號說明】 1 〇 :晶圓加工用膠帶 11、11 a ··脫模薄膜 1 2 :接著劑層 12a :圓形接著劑層部 12b :周邊接著劑層部 1 3 :黏著薄膜 -25- 201217483 1 3 a :圓形標籤部 13b :周邊部 1 4 :基材薄膜 1 5 :黏著劑層 20、20A、20B:接著薄膜 2 1 :切晶固晶薄膜 22 :切口Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Substitute layer composition 1A 1A 1B 1B Substrate layer thickness (μm) 20 20 20 20 Release film S314 K-1504 S314 K-1504 Breaking strength (N/10 mm) 1 1 1.4 1.4 Peeling force (N/10mm) 0.012 0.02 0.024 0.036 Breaking strength/peeling force 83.3 50 58.3 38.9 Precutting property (390mm) XXXX Precutting property (450mm) 〇X 〇X S31 in Table 2 and Table 3 4 It is a release-treated polyethylene terephthalate (PET) film (manufactured by Teijin Dupon Film, trade name), and K-15 04 is a release-treated PET film (manufactured by Toyobo Co., Ltd., trade name). With respect to Examples 1 to 4 and Comparative Examples 1 to 4, each of the breaking strength and the peeling force were measured, and the pre-cutting property was evaluated. In Tables 2 and 3, the measurement results of the breaking strength and the peeling force, the ratio of the breaking strength to the peeling force (breaking strength/peeling force), and the evaluation of the pre-cut property are shown. -21 - 201217483 <Measurement of breaking strength> The film 20B and Comparative Examples 1 to 4 of Examples 1 to 4 in which the adhesive layer 1 2 was held between the release film 1 1 and the release film 1 1 A Subsequently, the film was punched into a dumbbell shape, and the release film 11 and the release film 1 1 A were peeled off to prepare a test piece having only the adhesive layer 12. The breaking strength of the test piece was measured by using STROGRAPH (VE10) manufactured by Toyo Seiki Seisakusho Co., Ltd. in accordance with JIS B 7721 and JIS K 6301, and stretched at a linear velocity of 300 mm/miη, and the maximum load until breaking was measured. Further, the unit of the breaking strength is [Ν/1 Omm]. <Measurement of Peeling Force> The release film 11A of the film 1B of the first to fourth embodiments and the film 1B of the comparative example 1 to 4 was peeled off, and the shape-retaining tape (manufactured by Sekisui Chemical Co., Ltd.) was used as a 2 kg roller. FORTE) is bonded to the surface of the adhesive layer 12 of the release-release film 1 1 A, and cut into a strip shape of 25 mm width, and the release film 11 is laminated with the adhesive layer 12 and the shape-retaining tape in this order. A test piece consisting of three layers. STROGRAPH (VE 1 0 ) manufactured by Toyo Seiki Seisakusho Co., Ltd., the prepared test piece was separated from the laminate of the release film 11 and the adhesive layer 12 and the shape-retaining tape, and pinched at a line speed of 300 mm/min. The peeling force between the release film 11 and the adhesive layer 12 was measured. Further, the unit of the peeling force is [N/10 mm]. Further, the reason for 'separating the release film 11 and the laminate of the adhesive layer 丨2 and the shape-retaining tape' is because the laminate of the adhesive layer 12 and the shape-maintaining tape is peeled off from the release film 11-22-201217483, only When the adhesive layer 12 is peeled off, the adhesive layer 12 is elongated. <Evaluation of pre-cutting property> The evaluation of the pre-cutting property was carried out by peeling off the release film of the single-sided release film 1 1 A with respect to the adhesive film 20B of Examples 1 to 4 and the adhesive films of Comparative Examples 1 to 4. On the adhesive layer film 20A composed of the film 11 and the adhesive layer 12, a circular slit having a diameter of 320 mm for a 12-inch wafer is cut at intervals of 58.5 mm, and the periphery is processed at a processing speed of 10 m/min. The agent layer portion 12b was peeled off from the release film 1 1 and wound up to 1 〇〇m, and was evaluated as "〇" when it was not broken at all, and was evaluated as "X" when it was broken. Further, the entire roll width of the film was 3 90 mm and 45 0 m. As shown in Table 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) of the film 20B of Example 1 was 1,500, and the pre-cutting was performed in the range of 87.5 or more of the ratio of the predetermined breaking strength to the peeling force. The result of the property is completely unbroken in the case where the whole roll width is 390 mm and the case of 450 mm. In the adhesive film 20B of Example 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 1 〇〇, and the ratio of the breaking strength to the peeling force was in the above range of 8 7 _ 5 or more, so the pre-cutting property was As a result, the case where the entire roll width was 390 mm and the case of 4500 mm were completely unbroken. In the adhesive film 20B of Example 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 22 5 , and the ratio of the predetermined breaking strength to the peeling force was in the range of 87.5 or more, so the result of the pre-cut property In the case where the whole roll width is 3 9 Omm and the case of 45 Omm is completely broken. In the adhesive film 20B of Example 4, the ratio of the breaking strength to the peeling force (-23-201217483 breaking strength/peeling force) was 150 ′ in the range of 8 7.5 or more of the ratio of the predetermined breaking strength to the peeling force, so the pre-cutting property was The result was that the whole roll width was 390 mm and the case of 450 mm. It was not broken at all. As shown in Table 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) of the film of Comparative Example 1 was 8 3 · 3 ' or more than the above-mentioned ratio of the breaking strength to the peeling force. Out of range 'The result of the pre-cutting property is completely unbroken in the case where the whole roll width is 450 mm' but breaks at 390 mm. In the film of Comparative Example 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 5 〇', and the ratio of the predetermined breaking strength to the peeling force was outside the range of 87.5 or more, so the result of the pre-cutting property was The fracture occurred in the case where the width of the roll was 390 mm and that of the case of 4500 mm. In the film of Comparative Example 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 58.3, and the ratio of the predetermined breaking strength to the peeling force was outside the range of 87.5 or more, so the result of the pre-cutting property was in the whole roll. The case where the width is 450 mm is not broken at all, but breakage occurs at 390 mm. The ratio of the breaking strength to the peeling force (breaking strength/peeling force) of the film of Comparative Example 4 was 3 8 ·9, and the result of the pre-cutting property was outside the range of 87.5 or more of the ratio of the predetermined breaking strength to the peeling force. The fracture occurred in the case where the entire roll width was 390 mm and 450 mm. From the results of Tables 2 and 3, the breaking strength per unit of the peeling force per unit peeling force of the adhesive layer ' with respect to the adhesive layer 12 is 87.5 times or more, preferably 100 times. In the adhesive film 20 of the present embodiment described above, it is possible to prevent the peripheral adhesive layer from being formed in the adhesive layer winding step of the wafer processing tape 1 which is pre-cut into the shape of the semiconductor wafer shape -24-201217483. The break of the part 1 2b. Further, the productivity of the preprocessed wafer processing tape 10 can be improved by using the film 20 of the present embodiment. Further, it is possible to prepare a wafer processing apparatus in which the amount of the peripheral adhesive layer portion 12b which is not required, the dicing of the semiconductor wafer, the semiconductor dicing die bond, etc., which are unnecessary, and the production efficiency is good. Use tape 10. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) is a top view of a film according to an embodiment of the present invention, and Fig. 1 (b) is a cross-sectional view of the same film. Fig. 2 (a) is a plan view showing the film of the slit forming step, and Fig. 2 (b) is a cross-sectional view of the same film. Fig. 3 is a schematic view for explaining the winding step of the adhesive layer. Fig. 4 (a) is a plan view of a tape for wafer processing according to an embodiment of the present invention, Fig. 4 (b) is a plan view of the same tape, and Fig. 4 (c) is a sectional view of the same tape. [Description of main component symbols] 1 〇: Wafer processing tape 11, 11 a · Release film 1 2 : Adhesive layer 12a: Round adhesive layer portion 12b: Peripheral adhesive layer portion 1 3 : Adhesive film - 25-201217483 1 3 a : Round label portion 13b: peripheral portion 1 4 : base film 1 5 : adhesive layer 20, 20A, 20B: follow-up film 2 1 : dicing solid crystal film 22: slit