201217103 20100002TW1 35458twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種研磨墊，且特別是有關於一種可 提供面研磨效率之研磨塾。 【先前技術】201217103 20100002TW1 35458twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a polishing pad, and more particularly to a polishing crucible which can provide surface grinding efficiency. [Prior Art]
隨著產業的進步，平坦化製程經常被採用為生產各種 元件的製程。在平坦化製程十，化學機械研磨製程經常為 產業所使用。一般來說，化學機械研磨製程是藉由供應具 有化學品混合物之研磨液於研磨墊上，並對被研磨物件施 加一壓力以將其壓置於研磨塾上，且在物件及研磨塾彼此 進行相對運動。藉由相對運動所產生的機械摩擦及研磨液 的化學作用下’移除部分物件表層，而使其表面逐漸平坦， 來達成平坦化的目的。 圖1是習知常用一種研磨墊的上視示意圖。請參照圖 1，研磨墊包括研磨層102與多個圓形溝槽1〇4，這些圓'形 溝槽1〇4是以同心圓的方式配置在研磨層102中用來容納 在進行研磨時，研磨層102與物件105(例如為晶 圓）的表_接觸’同時研料沿著旋轉方向R轉動。在研 動的同時，研磨液持續地供應至研磨墊上並流經研 磨層102與物件105之間。 ，:而，依照圖〗這種研磨層⑽與圓形溝槽_配置 式^研磨速率(rem〇val me，RR)僅約為37〇〇咖⑽ 。域的研磨速率在齡講究高研磨速率的要求下明 201217103 20100002TW1 35458ίν^.άοο/η 顯不足。依現行方式若要增加研磨墊的研磨速率，大多是 藉由增加研磨液的流量來達成。但是，增加研磨液的流量 會增加研磨液的使用量，如此將相對增加研磨成本。 【發明内容】 本發明提供一種研磨墊，其可以在不增加研磨液使用 量的前提下提高研磨效率。 本發明提出一種研磨墊，適用於具有一旋轉方向之一 研磨設備，此研磨墊包括一研磨層、至少一第一環狀溝槽、 至少一徑向延伸溝槽以及至少一第二環狀溝槽；研磨層^具 有一第一區域以及一第二區域，第一區域自研磨層之二& 近中心位置向外延伸至研磨層之一第一半徑區域，第二區 域自該研磨層之第一半徑區域向外延伸至一鄰近邊緣位 置。所述至少一第一環狀溝槽以及至少一徑向延伸溝槽是 位於第一區域内；所述至少一第二環狀溝槽是位於第二區 域内；特別是，研磨層之第一半徑區域之半徑介於研磨層 之半徑的30%至70%。 本發明提出一種研磨塾，適用於具有一旋轉方向之一 研磨設備，此研磨墊包括一研磨層、至少一第一罗 至少-徑向延伸溝槽以及至卜第二環狀溝槽^^槽具 有一第一區域以及一第二區域，第一區域自研磨層之一鄰 近中心位置向外延伸至研磨層之一第一半徑區域，第二區 域自該研磨層之第一半徑區域向外延伸至一鄰近邊緣位 置，所述至少一第一環狀溝槽以及至少一徑向延伸溝槽是 201217103 20 賺 02TW! 35458twfd〇c/n =第：區域内；所述至少—第二環狀溝槽是位於第二區 域内，^別是，所述徑向延伸溝槽與第一環狀溝槽交叉， 且第環狀溝槽的深度與徑向延伸溝槽的深度實質上相 等。 基於上述，本發明在研磨層之第一區域中設置了第一 環狀溝槽以及徑向延伸溝槽，且在第二區域中僅設置第二 環狀溝槽。由於第-環狀溝槽與第二環狀溝槽可以使研磨 液均勻地分佈於研磨層上，且徑向延伸溝槽的設計增加了 研磨液的流場分佈速度。因此，藉由這種第一、第二環狀 溝槽以及徑向延伸溝槽的搭配組合，可以相較於傳統研磨 墊獲得較高的研磨速率，而不需提高研磨液的使用量，因 而不會增加研磨成本。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 Φ 圖2A與圖2B是根據本發明一實施例之研磨塾的上視 示意圖。為了清楚的顯現出本實施例之研磨墊，圖2A僅 標禾出研磨層以及溝槽，而圖2B是詳細地標示出研磨墊 之分區以及所有組成構件。請參照圖2A與圖2B，本實施 例之研磨墊200適用於具有一旋轉方向尺之一研磨設備。 換言之，研磨塾200是沿著箭頭R的方向逆時針轉動。研 磨墊200包括研磨層202、至少一個第一環狀溝槽210、至 少/個徑向延伸溝槽212以及至少一個第二環狀溝槽214。 201217103 20100002TW1 35458twf.doc/n 研磨層202例如是由聚合物基材所構成，聚合物基材 可以是聚酯（polyester)、聚醚（polyether)、聚胺醋 (polyurethane)、聚碳酸酯（polycarbonate)、聚丙烯酸酯 (poly aery late)、聚 丁二烯(polybutadiene)、或其餘經由合適 之熱固性樹脂（thermosetting resin)或熱塑性樹脂 (thermoplastic resin)所合成之聚合物基材等。研磨層202 除聚合物基材外，另可包含導電材料、研磨顆粒、或可溶 解添加物於此聚合物基材中。 另外，研磨層202具有一第一區域202a以及一第二 區域202b。在研磨層202之内部具有一鄰近中心位置2〇4, 所述鄰近中心位置204指的是靠近或是接近研磨層202之 中心點的區域。此外，在研磨層202之邊緣具有一鄰近邊 緣位置206 ’所述鄰近邊緣位置206指的是靠近或是接近 研磨層202之邊緣的區域。而研磨層202本身具有半徑D。 上述研磨層202之第一區域202a是自研磨層202之 鄰近中心位置204向外延伸至研磨層202之第一半徑區域 (具有半徑D1)。研磨層202之第二區域202b是自研磨層 202之第一半徑區域(具有半徑D1)之處向外延伸至鄰近邊 緣位置206。特別是，研磨層202之第一半經區域之半徑 D1是介於研磨層202之半徑D的30%至70%。較佳的是， 研磨層202之第一半徑區域之半徑D1是介於研磨層2〇2 之半徑D的40%至60%。更佳的是，研磨層202之第一半 徑區域之半徑D1實質上等於研磨層202之半徑D的 50%。在本實施例中，研磨層202之第一區域2〇2a與研磨 201217103 20100002TW1 35458twf.doc/n 層202之第二區域202b相鄰且兩者彼此不重疊。更詳細來 說，第二區域202b是緊鄰第一區域202a並且圍繞在第一 區域202a的周圍或是外部。 另外，上述之第一環狀溝槽210以及徑向延伸溝槽212 是位於研磨層202之第一區域202a内。根據本實施例，研 磨層202之第一區域202a内是設置多個第一環狀溝槽21〇 以及多個徑向延伸溝槽212。然，本發明不限制第一環狀 溝槽210以及徑向延伸溝槽212的數目。實際上，第一環 狀溝槽210以及徑向延伸溝槽212的數目可根據研磨層 202的尺寸、第一區域2〇2a的大小等等來設計。 ,此外，上述之第一環狀溝槽210可為圓形溝槽、橢圓 形溝槽或波浪形溝槽。根據本實施例，上述之第一環狀溝 槽210為同心圓溝槽，且相鄰的兩個第一環狀溝槽之 間的間距是大致相等。然，根據其他實施例，第一環狀溝 槽210可為非同心圓溝槽，且相鄰的兩個第一環狀溝槽 之間的間距也可以是不相等。另外，根據一實施例，上述 之第〆環狀溝槽210之任一點的切線方向L1與研磨層202 之半k D的夾角0 1例如是介於6〇至12〇度。 在本實施例中，徑向延伸溝槽212是曲線形溝槽，且 s L ^溝槽212係由研磨層202之鄰近中心位置204向外 钭2狀分布。換言之’所述曲線形溝槽212由内向外偏 =之2是與研磨塾之旋轉方向R相同。更詳二 具有!==之曲度可使曲線形溝槽212由内向外 聲曲方向’而且f曲方向與研磨墊2〇〇之旋轉方向 7 201217103 20100002TW1 35458^^οο/η R相同。舉例來說，研磨墊200之旋轉方向R相同為正向 (即逆時針方向）’曲線形溝槽212之彎曲方向亦為正向 (即逆時針方向）。此種螺旋狀分布的曲線形溝槽212的 設計可在研磨墊200旋轉時將一部分研磨液吸回，以提供 研磨液具有不同的流場分布。 另外，根據一實施例，上述之徑向延伸溝槽212之任 一點的切線方向L2與研磨層202之半徑D的炎角0 2例 如是介於-30至30度。 值得一提的是’在研磨層202之第一區域202a内， 第一環狀溝槽210與徑向延伸溝槽212交又，且第一環狀 溝槽210的深度與徑向延伸溝槽212的深度實質上相等。 另外’研磨層202之第二區域202b内是設置至少一 第一環狀溝槽214。根據本實施例，研磨層202之第二區 域202b内是設置多個第二環狀溝槽214。然，本發明不限 制第二環狀溝槽214的數目。實際上，第二環狀溝槽214 的數目可根據研磨層202的尺寸、第二區域202b的大小等 等來設計。As the industry progresses, the flattening process is often adopted as a process for producing various components. In the flattening process, the chemical mechanical polishing process is often used by the industry. Generally, the chemical mechanical polishing process is performed by supplying a polishing liquid having a chemical mixture onto a polishing pad, and applying a pressure to the workpiece to be pressed against the polishing crucible, and the object and the polishing crucible are opposed to each other. motion. The surface of the object is removed by the mechanical friction generated by the relative motion and the chemical action of the polishing liquid, and the surface is gradually flattened to achieve the purpose of planarization. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top plan view of a conventional polishing pad. Referring to FIG. 1, the polishing pad includes an abrasive layer 102 and a plurality of circular grooves 1〇4 arranged in a concentric manner in the polishing layer 102 for being accommodated during polishing. The polishing layer 102 is in contact with the surface of the object 105 (for example, a wafer) while the material is rotated in the direction of rotation R. While being ground, the slurry is continuously supplied to the polishing pad and flows between the polishing layer 102 and the object 105. ,: According to the figure, the polishing layer (10) and the circular groove _ configuration method (rem〇val me, RR) is only about 37 ( (10). The grinding rate of the domain is as high as the requirement of high grinding rate. 201217103 20100002TW1 35458ίν^.άοο/η In order to increase the polishing rate of the polishing pad according to the current method, it is mostly achieved by increasing the flow rate of the polishing liquid. However, increasing the flow rate of the slurry increases the amount of slurry used, which increases the polishing cost relatively. SUMMARY OF THE INVENTION The present invention provides a polishing pad which can improve polishing efficiency without increasing the amount of polishing liquid used. The invention provides a polishing pad suitable for a grinding device having a rotating direction, the polishing pad comprising a polishing layer, at least one first annular groove, at least one radially extending groove and at least one second annular groove a groove; the polishing layer has a first region and a second region, the first region extending outward from the second & near center of the polishing layer to a first radius region of the polishing layer, and the second region is from the polishing layer The first radius region extends outward to an adjacent edge location. The at least one first annular groove and the at least one radially extending groove are located in the first region; the at least one second annular groove is located in the second region; in particular, the first of the abrasive layer The radius of the radius region is between 30% and 70% of the radius of the abrasive layer. The invention provides a grinding crucible suitable for a grinding device having a rotating direction, the polishing pad comprising an abrasive layer, at least one first at least-radial extending groove and a second annular groove Having a first region and a second region, the first region extending outward from a center of the polishing layer to a first radius region of the polishing layer, the second region extending outward from the first radius region of the polishing layer Up to an adjacent edge position, the at least one first annular groove and the at least one radially extending groove are 201217103 20 earn 02TW! 35458twfd〇c/n = the first: the area; the at least the second annular groove The groove is located in the second region, and the radially extending groove intersects the first annular groove, and the depth of the annular groove is substantially equal to the depth of the radially extending groove. Based on the above, the present invention provides a first annular groove and a radially extending groove in the first region of the abrasive layer, and only a second annular groove is provided in the second region. Since the first annular groove and the second annular groove can uniformly distribute the polishing liquid on the polishing layer, the design of the radially extending groove increases the flow velocity distribution rate of the polishing liquid. Therefore, by the combination of the first and second annular grooves and the radially extending grooves, a higher polishing rate can be obtained compared to the conventional polishing pad without increasing the usage amount of the polishing liquid. Does not increase grinding costs. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] Φ Figs. 2A and 2B are top plan views of a polishing crucible according to an embodiment of the present invention. In order to clearly show the polishing pad of this embodiment, Fig. 2A only shows the polishing layer and the groove, and Fig. 2B details the division of the polishing pad and all the constituent members. Referring to Figures 2A and 2B, the polishing pad 200 of the present embodiment is suitable for use in a polishing apparatus having a rotational direction ruler. In other words, the grinding bowl 200 is rotated counterclockwise in the direction of the arrow R. The polishing pad 200 includes an abrasive layer 202, at least one first annular groove 210, at least one radially extending groove 212, and at least one second annular groove 214. 201217103 20100002TW1 35458twf.doc/n The polishing layer 202 is composed, for example, of a polymer substrate, which may be a polyester, a polyether, a polyurethane, or a polycarbonate. ), poly aery late, polybutadiene, or the like, a polymer substrate or the like synthesized via a suitable thermosetting resin or a thermoplastic resin. The abrasive layer 202 may comprise, in addition to the polymeric substrate, a conductive material, abrasive particles, or a soluble additive in the polymeric substrate. Additionally, the polishing layer 202 has a first region 202a and a second region 202b. Inside the abrasive layer 202 there is an adjacent central location 2〇4, which is the region near or near the center point of the abrasive layer 202. Additionally, the edge of the polishing layer 202 has an adjacent edge location 206' which refers to the region near or near the edge of the abrasive layer 202. The abrasive layer 202 itself has a radius D. The first region 202a of the polishing layer 202 extends outwardly from the central location 204 of the polishing layer 202 to a first radius region (having a radius D1) of the polishing layer 202. The second region 202b of the abrasive layer 202 extends outwardly from the first radius region (having a radius D1) of the abrasive layer 202 to an adjacent edge location 206. In particular, the radius D1 of the first half-pass region of the abrasive layer 202 is between 30% and 70% of the radius D of the abrasive layer 202. Preferably, the radius D1 of the first radius region of the abrasive layer 202 is between 40% and 60% of the radius D of the abrasive layer 2〇2. More preferably, the radius D1 of the first radius region of the abrasive layer 202 is substantially equal to 50% of the radius D of the abrasive layer 202. In the present embodiment, the first region 2〇2a of the polishing layer 202 is adjacent to the second region 202b of the layer 201217103 20100002 TW1 35458 twf.doc/n 202 and the two do not overlap each other. In more detail, the second region 202b is immediately adjacent to the first region 202a and surrounds or is external to the first region 202a. In addition, the first annular groove 210 and the radially extending groove 212 are located in the first region 202a of the polishing layer 202. According to this embodiment, a plurality of first annular grooves 21A and a plurality of radially extending grooves 212 are disposed in the first region 202a of the polishing layer 202. However, the present invention does not limit the number of first annular grooves 210 and radially extending grooves 212. In practice, the number of first annular grooves 210 and radially extending grooves 212 may be designed according to the size of the abrasive layer 202, the size of the first region 2〇2a, and the like. Further, the first annular groove 210 described above may be a circular groove, an elliptical groove or a wavy groove. According to this embodiment, the first annular groove 210 is a concentric groove, and the spacing between the adjacent two first annular grooves is substantially equal. However, according to other embodiments, the first annular groove 210 may be a non-concentric groove, and the spacing between adjacent two first annular grooves may also be unequal. Further, according to an embodiment, the angle θ1 between the tangential direction L1 of any one of the second annular grooves 210 and the half k D of the polishing layer 202 is, for example, 6 〇 to 12 〇. In the present embodiment, the radially extending grooves 212 are curved grooves, and the s L ^ grooves 212 are distributed outwardly from the adjacent central position 204 of the polishing layer 202. In other words, the curved groove 212 is offset from the inside to the outside by 2, which is the same as the direction of rotation R of the grinding crucible. More specifically, the curvature with !== can make the curved groove 212 from the inner and outer directions of the sound and the direction of the f curvature is the same as the direction of rotation of the polishing pad 2 2012 7 201217103 20100002 TW1 35458^^οο/η R. For example, the direction of rotation R of the polishing pad 200 is the same in the forward direction (i.e., counterclockwise). The direction of curvature of the curved groove 212 is also positive (i.e., counterclockwise). The spirally shaped curved groove 212 is designed to draw back a portion of the slurry as the polishing pad 200 rotates to provide a different flow field distribution for the slurry. Further, according to an embodiment, the tangential direction L2 of any one of the radially extending grooves 212 and the yoke angle 0 2 of the radius D of the polishing layer 202 are, for example, between -30 and 30 degrees. It is worth mentioning that 'in the first region 202a of the polishing layer 202, the first annular groove 210 intersects the radially extending groove 212, and the depth and the radially extending groove of the first annular groove 210 The depth of 212 is substantially equal. Further, at least one first annular groove 214 is disposed in the second region 202b of the polishing layer 202. According to this embodiment, a plurality of second annular grooves 214 are disposed in the second region 202b of the polishing layer 202. However, the present invention is not limited to the number of second annular grooves 214. Actually, the number of the second annular grooves 214 can be designed according to the size of the polishing layer 202, the size of the second region 202b, and the like.
類似地，第二環狀溝槽214可為圓形溝槽、橢圓形溝 槽或波浪形溝槽。根據本實施例，上述之第二環狀溝槽214 為同心圓溝槽，且相鄰的兩第二環狀溝槽214之間的間距 是大致相等。然，根據其他實施例，第二環狀溝槽214可 為非同心圓溝槽，且相鄰的兩第二環狀溝槽214之間的間 距也可以是不相等。另外，根據一實施例’上述之第二環 狀溝槽214之任一點的切線方向L3與研磨層202之半徑D 201217103 20100002TW1 35458twf.doc/n 的夾角0 3例如是介於60至120度。 值得一提的是，在上述圖2A與圖2B之研磨墊中’可 進一步包括設置偵測窗（未繪示）。偵測窗可以是設置在第 一區域202a，也可以設置在第二區域202b，端視需求而定。 承上所述，在圖2A與圖2B之研磨墊200中，研磨層202 之第一區域202a内設置了有第一環狀溝槽210以及徑向延 伸溝槽212，而研磨層202之第二區域202b中僅設置了第 0 二環狀溝槽214。以這樣的溝槽組合配置方式所製成的研 磨墊200’在不改變研磨條件（即不增加研磨液的流量）的狀 況下’其研磨速率可高達4780 nm/min。換言之，在研磨 液流量以及其他研磨條件不改變的情況下，本實施例之研 磨墊200的研磨速率(4780 nm/min)相較於傳統研磨墊的研 磨速率(3700nm/min)，提高了將近3〇0/〇。 圖3A與圖3B是根據本發明另一實施例之研磨墊的上 視示意圖。為了清楚的顯現出本實施例之研磨墊，圖3A 僅ir；示出研磨層以及溝槽，而圖3b是詳細地標示出研磨 # 墊之为區以及所有組成構件。圖3A與圖3B之實施例與圖 2A與圖2B之實施例相似’因此在此與® 2A及圖2B相同 的元件以相_符號表示，且不再重複魏。特別是，在 圖从與圖3B之研磨墊綱中，徑向延伸溝槽212也是曲 線形溝槽，且曲線形溝槽212也是由研磨層2〇2之鄰近中 u位置2〇4向外呈螺旋狀分布。然，圖3八與圖之實施 圖2b之實施例不同之處在於’曲線形溝槽 B偏斜之方向是與研磨墊200之旋轉方向R不 201217103 20100002TW1 35458twf.doc/n 相同。更詳細來說，曲線形溝槽212之曲度可使曲線形溝 槽m由内向外具有一彎曲方向，而且所述彎曲方向盘研 磨墊200之旋轉方向R不相同。舉例來說研磨墊2⑻之 旋轉方向R相同為正向（即逆時針方向），曲線形溝槽212 之彎曲方向為反向（即順時針方向）。 一，4A與圖4B是根據本發明另一實施例之研磨墊的上 視示思圖為了 /月楚的顯現出本實施例之研磨塾，圖4a 僅標不出研磨層以及溝槽，而圖4B是詳細地標示出研磨 墊之分區以及所有組成構件。圖4A與圖4B之實施例與圖 2A與圖2B之實施例相似，因此在此與_ 2A與圖2B相同 的兀件以相同的符號表示，且不再重複贅述。圖4a與圖 4B之實施例與圖2A與圖2Bi實施例不同之處在於^向 延伸溝槽212為直線形溝槽，且直線形溝槽212由研磨層 202之鄰近中心位置2〇4向外呈放射狀分布。換言之，直 線形溝槽212的其中一端點位於鄰近中心位置2〇4，而另 一端點位於靠近第一區域202a(第一半徑區域)的邊緣。另 外，上述之直線形溝槽212亦可為多個片段形（例如是直 線狀片段形）或孔洞形（例如是圓孔形）溝槽排列成直線 來取代，而其所組成之表面圖案以放射狀分布配置在研磨 層202中。 上述各實施例之研磨墊可應用於製造工業元件之研 磨製程’例如是應用於電子產業之元件，可包括半導體、 積體電路、微機電、能源轉換、通訊、光學、儲存碟片、 及顯不器等元件，而製作這些元件所使用的研磨物件可包 201217103 20100002TW1 35458twf.doc/n. 括半導體晶圓、mV族晶圓、儲存元 高分子聚合物基底、及玻璃基底等，二?陶尤基底 明之範圍。 寻L麟用以限定本發 另外，本發明之研磨層中的第一環 ySimilarly, the second annular groove 214 can be a circular groove, an elliptical groove or a wavy groove. According to this embodiment, the second annular groove 214 is a concentric groove, and the spacing between the adjacent two annular grooves 214 is substantially equal. However, according to other embodiments, the second annular groove 214 may be a non-concentric circular groove, and the spacing between the adjacent two second annular grooves 214 may also be unequal. Further, the angle θ3 of the tangential direction L3 of any one of the above-mentioned second annular grooves 214 and the radius D 201217103 20100002 TW1 35458 twf.doc/n of the polishing layer 202 according to an embodiment is, for example, 60 to 120 degrees. It is worth mentioning that the polishing pad in the above-mentioned FIG. 2A and FIG. 2B may further include a detection window (not shown). The detection window may be disposed in the first area 202a or in the second area 202b, depending on the requirements. As described above, in the polishing pad 200 of FIGS. 2A and 2B, the first annular groove 210 and the radially extending groove 212 are disposed in the first region 202a of the polishing layer 202, and the polishing layer 202 is Only the 0th second annular groove 214 is provided in the second region 202b. The polishing pad 200' made in such a groove combination configuration can have a polishing rate of up to 4780 nm/min without changing the polishing conditions (i.e., without increasing the flow rate of the slurry). In other words, in the case where the slurry flow rate and other grinding conditions are not changed, the polishing rate (4780 nm/min) of the polishing pad 200 of the present embodiment is improved closer than the polishing rate (3700 nm/min) of the conventional polishing pad. 3〇0/〇. 3A and 3B are schematic top views of a polishing pad in accordance with another embodiment of the present invention. In order to clearly show the polishing pad of the present embodiment, Fig. 3A is only ir; the polishing layer and the groove are shown, and Fig. 3b is a detail indicating the area of the polishing pad and all the constituent members. The embodiment of Figures 3A and 3B is similar to the embodiment of Figures 2A and 2B. Thus, the same elements as in Figures 2A and 2B are denoted by the phase symbol and the Wei is not repeated. In particular, in the polishing pad of FIG. 3B, the radially extending groove 212 is also a curved groove, and the curved groove 212 is also outwardly located in the vicinity of the polishing layer 2〇2 by 2〇4. It is distributed in a spiral shape. However, Fig. 3 is different from the embodiment of Fig. 2b in that the direction of the curved groove B is the same as the direction of rotation R of the polishing pad 200 not 201217103 20100002 TW1 35458 twf.doc/n. In more detail, the curvature of the curved groove 212 allows the curved groove m to have a curved direction from the inside to the outside, and the rotational direction R of the curved steering pad 200 is different. For example, the rotation direction R of the polishing pad 2 (8) is the same in the forward direction (i.e., counterclockwise direction), and the curved direction of the curved groove 212 is reversed (i.e., clockwise). 4A and FIG. 4B are top view views of the polishing pad according to another embodiment of the present invention. In order to show the polishing flaw of the embodiment, FIG. 4a only marks the polishing layer and the groove, and FIG. Figure 4B is a detailed illustration of the division of the polishing pad and all of the constituent members. The embodiment of Figs. 4A and 4B is similar to the embodiment of Figs. 2A and 2B, and therefore the same components as those of Fig. 2A and Fig. 2B are denoted by the same reference numerals and will not be described again. The embodiment of Figures 4a and 4B differs from the embodiment of Figures 2A and 2B in that the extended trench 212 is a linear trench and the linear trench 212 is oriented from the adjacent central position 2〇4 of the polishing layer 202. The outside is radially distributed. In other words, one of the end points of the linear groove 212 is located adjacent to the center position 2〇4, and the other end point is located near the edge of the first area 202a (the first radius area). In addition, the above-mentioned linear groove 212 may be replaced by a plurality of segment-shaped (for example, linear segment-shaped) or hole-shaped (for example, circular-hole-shaped) grooves arranged in a straight line, and the surface pattern formed by the same may be The radial distribution is disposed in the abrasive layer 202. The polishing pad of each of the above embodiments can be applied to a manufacturing process for manufacturing industrial components, such as components used in the electronics industry, and can include semiconductors, integrated circuits, MEMS, energy conversion, communication, optical, storage, and display. No components, etc., and the abrasive articles used to make these components can be included in 201217103 20100002TW1 35458twf.doc/n. Including semiconductor wafers, mV wafers, storage polymer bases, and glass substrates, etc. Especially the scope of the base. Looking for L Lin to define the hair. In addition, the first ring in the abrasive layer of the present invention y
溝:以及第二環狀溝槽可以機械方式(例如二備IDitch: and the second annular groove can be mechanically
是使用化侧或是雷射加工)製作:方= 明之範圍’亦可選擇其他形成方式製作溝槽。歸疋本發 综上所述，本發明在研磨層之第一區^ 環狀溝槽以及徑向延伸溝槽，且在第二區二 環狀溝槽。由於第-環狀溝槽與第二歡簡可^吏^ 液均句地分佈於研觸上，且徑岐伸糾的設計增加了 研磨液的流場分佈速度，此，藉由這種第―、第二環狀 溝槽以及徑向料溝槽的搭配組合，可以相較於傳統研磨 因 塾獲得較尚的研磨速率’而不需提高研磨液的使用量 而不會增加研磨成本。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，贿所屬技術領域中具有料知識者，在不脫離 本發明之精神和範圍内’當可作些許之更動與潤飾故本 發明之保護範圍當視後社申請專職_界定者為準。 【圖式簡單說明】 圖1是傳統研磨墊的上視示意圖。 圖2 A與圖2 B是根據本發明一實施例之研磨墊的上視 11 201217103 2Ό l UUUU^TW 1 3545 8twf.doc/n 示意圖。 圖3A與圖3B是根據本發明另一實施例之研磨墊的上 視示意圖。 圖4A與圖4B是根據本發明又一實施例之研磨墊的上 視示意圖。 【主要元件符號說明】 2〇〇 :研磨墊 102、202 :研磨層 104 :溝槽 105 :物件 202a :第一區域 202b :第二區域 204 :鄰近中心位置 206 :鄰近邊緣位置 210 :第一環狀溝槽 212 :徑向延伸溝槽 214 :第二環狀溝槽 D1 :第一半徑 D :半徑 R :方向 L1〜L3 :切線方向 0 1〜0 3 :夾角 12It is made by using the chemical side or laser processing): square = the range of the range. SUMMARY OF THE INVENTION In summary, the present invention has an annular groove and a radially extending groove in the first region of the polishing layer and a second annular groove in the second region. Since the first-annular groove and the second simplification can be uniformly distributed on the grinding contact, the design of the diameter expansion and the correction increases the flow velocity distribution of the polishing liquid, thereby, by this ―, the combination of the second annular groove and the radial groove can obtain a higher grinding rate than the conventional grinding process without increasing the amount of the polishing liquid without increasing the grinding cost. The present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. Those skilled in the art of the invention will be able to make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be subject to the definition of the full-time job. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view of a conventional polishing pad. 2A and 2B are schematic views of a top view of a polishing pad according to an embodiment of the present invention. 11 201217103 2Ό l UUUU^TW 1 3545 8twf.doc/n. 3A and 3B are schematic top views of a polishing pad in accordance with another embodiment of the present invention. 4A and 4B are schematic top views of a polishing pad in accordance with still another embodiment of the present invention. [Main component symbol description] 2〇〇: polishing pad 102, 202: polishing layer 104: groove 105: object 202a: first region 202b: second region 204: adjacent center position 206: adjacent edge position 210: first ring Shaped groove 212: radially extending groove 214: second annular groove D1: first radius D: radius R: direction L1~L3: tangential direction 0 1~0 3 : angle 12