201216526 六、發明說明： 【發明所屬之技術領域】 本發明係關於發光二極體（LED)，且特定言之，本發明 係關於一種將一層層疊在一基台基板（submount substrate) 上之LED上（諸如將一磷光體層層疊在LED上）之技術。 【先前技術】 先前技術之圖1續·示安裝在一基台晶圓12之一部分上之 一習知覆晶LED晶粒10。在一覆晶中，η型與p型接點兩者 係形成於該LED晶粒之相同侧上。 LED晶粒10係由生長在一生長基板（諸如一藍寶石基板） 上之半導體蟲晶層（包含一 η型層14、一作用層15及一p型 層16)形成。在圖1中，已藉由雷射剝離、蝕刻、研磨或藉 由其他技術而移除生長基板。在一實例中，蟲晶層係基於 GaN，且作用層15發出藍光。 一金屬電極18電接觸p型層16，且一金屬電極2〇電接觸n 型層14。在一實例中’電極18及2〇為通過超音波而焊接至 一陶瓷基台晶圓12上之陽極金屬墊22及陰極金屬墊24之金 墊。基台晶圓1 2可為任何適合材料，其包含石夕。基台晶圓 12具有引導至與一印刷電路板黏合之底部金屬墊“及“之 導電通孔24。諸多LED(諸如2000個）係安裝在基台晶圓12 上’且基台晶圓12將隨後經切割以形成個別led/基台。 圖2係安裝在基台晶圓12上之LED晶粒1〇之一簡化俯視 圖，且圖3係圖2之晶圓12之一部分之一簡化橫截面圖。 在LED晶粒1〇係安裝在基台晶圓12上之後，一底部填充 157827.doc -4- 201216526 材料（諸如聚矽氧）可施配在各LED晶粒10下方以填充LED 晶粒10與基台晶圓12之下伏表面之間之間隙。 LED之更多細節可在全部以引用方式併入本文中之受讓 人之美國專利第6,649,440號與第6,274,399號及美國專利公 開案 US 2006/0281203 A1 與 2005/02695 82 A1 中找到。 . 在一陣列之LED晶粒10係安裝在基台晶圓12上時或在晶 圓12係經切割之後’已熟知將一磷光體沈積在各lEd晶粒 上以產生任何期望光色彩《為使用藍色LED晶粒10來產生 白光’已熟知藉由（例如）將一磷光體喷射或旋塗在一黏合 劑中、電泳法、將一稱光體施加在一反射杯中或其他方法 而將該YAG磷光體或紅色及綠色磷光體直接沈積在晶粒J 〇 上。亦已知將磷光體之一預成形磚（例如一燒結磷光粉或 一黏合劑中之磷光粉）貼附在LED晶粒1〇之頂上。通過磷光 體而洩漏之藍光與磷光體之光結合而產生白光。在使led 晶粒10上產生磷光層時’包含難以產生非常均勻磷光層厚 度及密度之問題。厚度或密度之任何變動將導致LED晶粒 之表面上之色彩不均勻。鱗光體之一預成形磚可更均勻且 允許在將其貼附至LED晶粒之前對該磚進行色彩測試；然 • 而，將各磚（例如1平方毫米）精確貼附至一 LED晶粒10之頂 面既困難又耗時。 讓與本受讓人之美國專利第7,344,952號描述一種將聚矽 氧黏合劑中之一磷光體薄片層疊在安裝在一基台晶圓上之 LED晶粒上之單步驟層疊程序。 【發明内容】 157827.doc 201216526 本發明之一目的為提出一種批量生產磷光體轉換LED之 程序。 本發月之另目的為提出一種將一層疊膜有效率地層疊 在LED晶粒上之方法。 因此’一 LED裝置製造方法之一實施例係提出如下。首 先，該方法包含將至少一 LED晶粒設置在一基板上之一第 一步驟。接著’—預成形層疊層係安裝在該lED晶粒上。 4層且層L括具有一第一及第二表面之一黏合劑或其他材 料，且由該第一表面上之一支撐膜支撐該層疊層。該黏合 劑可含有磷光體粒子。當該層疊層係安裝在該LED晶粒上 時°亥支撑膜保持在該第一表面上。此後，該層疊層被力口 熱至一第一溫度以使該層疊層變軟，且加熱允許於該層疊 層與該基板之間產生包圍該至少一 LED晶粒之一氣密密 封。在移除該支撐膜之後，該層疊層在一真空中被加熱至 一第二溫度以移除該層疊層與該基板之間之空氣。在本發 明之一實施例中，結構可接著暴露至周圍空氣壓力，此使 該層疊層緊靠表面以因此使該層疊層緊貼在該LED晶粒 上。氟密密封防止空氣自該層疊層下方進入。 可在一晶圓片上同時製造一陣列之此等高品質層疊 LED ’接著切割該晶圓。因此，所提出之方法非常適合於 批量生產高亮度均勻LED且克服既有先前技術之主要缺 陷。方法允許在LED晶粒上形成一均勻填光體嵌入層疊 層。 程序可用以將任何薄而精緻之層層疊在LED晶粒上。 157827.doc 201216526 可預見上述實例之諸多變動=LED可為覆晶，或具有頂 部及底部電極，或僅具有頂部電極。 【實施方式】 相同或等效元件係以相同元件符號標記。 圖1至圖3之先前技術LED晶粒1 〇及基台晶圓12係用在用 以描述本發明之層疊程序之實例中’但本發明適用於任何 類型之LED晶粒及基台晶圓。此外，所述程序係使用竿一 設備之一批量生產程序，但該程序之態樣易適用於使用不 同設備來製造數量較少之鱗光體轉換LED。 在一實施例中’ LED晶粒1〇發出藍光或UV光且由磊晶 GaN層形成’。 將參考與圖4至圖10之漸進結構結合之圖u之流程圖而 描述發明程序之一實施例。 在圖11之步驟20中，使用可為先前技術（如參考圖i所述） 之任何適合技術來製造一 LED晶圓。 在步驟22中，LED晶圓接著被切割（例如藉由鋸切），且 LED晶粒係安裝在一基台晶圓（諸如參考圖丨至圖3而描述之 基台晶圓12)上。在一實例中，具有安裝在基台晶圓以上 之約2000個LED晶粒。一底材可施配在各LED晶粒下方。 . 可執行一選用之囊封步驟以在LED晶粒上形成用於保護之 一層聚矽氧且增加光提取。 在步驟24令，參考圖4,提供—支撐膜26之一卷狀物。 支撐膜26可為約50微米厚、30公分寬及15〇米長之一市售 乙烯四氟乙烯（ETFEHI(聚合物）。其他尺寸亦適合，諸如 157827.doc 201216526 將支撐膜26設置為小薄片或—緞帶。 «4光私係與聚;^氧或其他適合點合劑混合以形成一聚 液’且該聚液係在-連續程序中噴射或以其他方式沈積在 支樓膜26上達-預定厚度（傲定連續施配一卷狀物）。在一 實施例中，使用—YAG磷光體（黃綠色）。在另-實施例 中’碟光體係經混合之紅色及綠色碟光體。填光體之任何 、·且。可結合LED光而用以產生任何色彩光u體之密 又層之厚度及麟光體或破光體組合之類型係經選擇使得 由LED晶粒與(若干)磷光體之組合發出之光具有一目標白 點或其他期望色彩。在一實施例中，磷光體/聚矽氧層將 約為30微米至200微米厚。其他惰性無機粒子（諸如光散射 材料（例如二氧化石夕、Ti〇2))亦可包含在該聚液中，或僅無 磷材料係包含在該漿液中。在另一實施例中，僅使用透明 聚石夕氧，且使用折射率不同之聚石夕氧來製造聚石夕氧層之各 種卷狀物。 接著，當展開支㈣26時，（諸如）藉由紅外織其他熱 源而使激液乾燥。圖4令展示所得之乾燥填光體/聚石夕氧層 28 〇 在步驟30中，在一連續程序中將咖㈣之一保護膜^ 放置在乾燥麟光體/聚石夕氧層28上。保護膜32起初係設置 為-卷狀物且可具有約25微米之一厚度及與支撐膜％相同 之其他尺寸。若支樓膜26係形成為小薄片且鱗光體/聚石夕 氧層28之頂面不會遭受潜在損壞接觸，則無需保護㈣。 另外’若4光體/聚石夕氧層28在不存在保護膜時不會被損 157827.doc 201216526 壞’則無需保護膜。 捲起圖4之夾層式結構以在稍後將LED晶粒層疊在一基 台晶圓上中使用中。保護膜32防止在結構之捲起期間接觸 磷光體/聚矽氧層28。支撐膜26及保護膜32均非強力貼附 . 至磷光體/聚矽氧層28。 • 可測試磷光體/聚矽氧層28之色彩轉換且與特定LED晶粒 匹配以產生某一範圍之峰值波長。可在層疊具有不同特性 之LED晶粒時製造具有不同特性之磷光體/聚矽氧層28之不 同卷狀物或薄片。 在步驟34中，假定磷光體/聚矽氧層28之卷狀物已經選 擇以被層疊至LED晶粒上，所以卷狀物係安裝在以某一速 率施配卷狀物之一層疊系統上。 在步驟36中，且如圖5中所示，當捲出夾層式磷光體/聚 矽氧層28時，連續移除保護膜32，因為其不再被需要。接 著，構光體/聚矽氧層28及支撐膜26被切割成尺寸與基台 晶圓12大致相同之部件（若需要），諸如4英寸χ4英寸或其 他尺寸。 圖6繪不磷光體/聚矽氧層28及支撐膜26之一切割部件之 . 一部分。 . 在步驟40中，磷光體/聚矽氧層28係面向下地安裝在基 台晶圓12上。晶圓12上之基準點可用於對準切割部件。 在步驟42中，如圖7中所示，執行一第一層疊步驟。磷 光體/聚矽氧層28係在一腔室中被加熱至4〇〇c至12(Γ(：以使 其變軟且導致磷光體/聚矽氧層28黏附至led晶粒丨〇之頂 157827.doc 201216526 面。該腔室中產生一真空，且向下機械壓力係（諸如）藉由 一彈性塾、一隔膜或壓縮空氣而施加至支撐膜26之表面。 均勻壓力導致磷光體/聚矽氧層28形成圍繞基台晶圓12之 周邊之一氣密密封且有助於磷光體/聚矽氧層28均勻黏附 至LED晶粒1〇之頂面。由於支撐膜26之相對剛度及[ED晶 粒10之高密度’磷光體/聚矽氧層28與！^0晶粒10之間之基 台b曰圓12可不接觸或很少接觸。支撐膜26有助於在機械壓 力之施加期間保護磷光體/聚矽氧層2 8且防止L E D晶粒i 〇上 之填光體/聚矽氧層28在此第一層疊步驟期間變形。 若僅真空就足以產生周邊密封，則無需壓力。 在步驟44中，自腔室移除結構，冷卻至室溫且（諸如）藉 由使用膠帶而移除支撐膜26。圖8展示所得結構。圍繞基 台晶圓12之周邊之氣密密封防止空氣填充在磷光體/聚矽 氧層28與基台晶圓12之間。若可在結構保持在腔室中時移 除支樓膜2 6，則可就地執行程序。 在步驟46中，執行一第二層疊程序。結構被放置在一真 空腔室中且被加熱至約至13(TC之一高溫，且產生一 真空以移除磷光體/聚矽氧層28與基台晶圓12之間之剩餘 二氣。因為支撐膜26已被移除，所以空氣可通過薄磷光體/ 聚石夕氧層28中之小孔而排出…般而言，第二層疊程序期 間之溫度高於[層疊程序期間所使用之溫度以導致填光 體/聚矽氧層28更易彎/緊貼。 真空之程度及程序時間取決於所使用之特定材料。一般 而言’-t薄麟光體/聚石夕氧層28移除剩餘空氣所需之時 157827.doc 201216526 間少於一更厚峨光體/聚矽氧層28。 在步驟48中，如圖9中所示，接著允許空氣進入腔室以 給腔室加壓’此使加熱/變軟磷光體/聚矽氧層28緊靠leD 晶粒10及基台晶圓12以使磷光體/聚矽氧層28緊貼在led晶 粒10周圍且囊封LED晶粒1 〇。周邊密封防止此空氣進入磷 光體/聚矽氧層28與基台晶圓12之間。 在步驟50中，如圖1〇中所示，使用壓縮成形來將一選用 之聚矽氧透鏡60模製在各LED晶粒1〇上❶接著，（諸如）藉 由鋸切而切割基台晶圓12以分開安裝磷光體轉換LED晶 粒，圖10中展示該等LED晶粒之一者。 雙層疊程序允許支撐膜26保持在磷光體/聚矽氧層28 上，直至磷光體/聚矽氧層28完全由LED晶粒1〇及基台晶圓 】2支撐且產生周邊密封。接著，纟第二層疊㈣中，在不 存在支撐膜26之情況下發生緊貼囊封。 上述批量生產程序之諸多變動係可#。變冑包含處理磷 光體/聚魏層28所需之溫度、隸尺寸、步驟之順序（諸 如在移除保護膜32之前或之後切割部件（若需要））、所使用 ，LED晶粒及基台晶圓之類型、聚矽氧囊封層之添加物等 等LED曰曰粒可非為覆晶且可由任何適合材料形成。 在-實施例中，將光散射粒子（諸如二氧化石夕或Ή⑹加 入至聚石夕氧（或其他黏合劑材料）囊封層中，或透明聚石夕氧 可不具有添加物但具有一選擇折射率以最大化來_晶 粒10之光提取。 (諸如)為了白點調諧、散射外加磷光體轉換或其他用 157827.doc 201216526 途’多個層可藉由對各層重複上述技術而相繼層疊在彼此 填光體/聚矽氧層28無需直接層疊在LED晶粒10上，但可 層叠在一囊封層或透鏡（諸如聚矽氧）或已形成於led晶粒 10上之其他層上。藉由將層28與LED晶粒隔開而導致一些 益處’諸如自背向散射光之更少晶粒吸收及改良色彩均勻 度。例如’磷光體/聚矽氧層28可層疊在圖1〇中之透鏡6〇 上其中使用經填充基台晶圓12上所執行之一壓縮成形程 序來首先形成LED晶粒10上之透鏡6〇。 層疊程序可應用於任何尺寸基台晶圓或任何其他類型之 基板，甚至僅包含一個LED晶粒之一基板。基板無需具有 金屬電極或其他互連功能。 雖然已展示及描述本發明之特定實施例，但熟習技術者 將明白可在不背離本發明之情況下於本發明之更廣態樣十 作出改變及修改，因此，附屬中請專利範圍應將落在本發 明之真實精神及料内之全部此等改變及修改涵蓋在申請 專利範圍之範疇内。例如’可根據設備、待層疊之層、程 序是否用於批量生產及其他因素而選擇圖u之程序流程圖 中之各種步驟。 【圖式簡單說明】 圖1係安裝在—基台基板或—基台晶圓之-部分上之_ 先前技術藍色或UV LED晶粒之—橫截面圖。 圖2係安裝在一基台晶圓上 〈LED日日粒之—簡化俯視 圖0 157827.doc -12. 201216526 圖3係圖2之晶圓之一部分之一簡化橫截面圖。 圖4繪示夾於一支撐膜與一保護膜之間之一磷光體/聚矽 氧層。薄片可施配成一卷狀物且為（例如）30公分寬χ150米 長。 圖5繪示恰好在層疊在一基台晶圓上之led晶粒上之前 展開薄片時逐漸移除之保護膜。 圖6繪示在保護膜已被移除之後且在磷光體/聚矽氧層已 經切割以大致匹配基台晶圓之尺寸之後之支撐膜上之磷光 體/聚矽氧層。 圖7繪示藉由加熱及在LED晶粒上經歷一第一層疊程序 而變軟之磷光體/聚矽氧層。 圖8繪示支撐膜被移除，因為此時由lEd晶粒及基台晶 圓支撐磷光體/聚矽氧層。 圖9繪示一第二層疊程序，其中磷光體/聚矽氧層緊貼至 LED晶粒且囊封LED晶粒。 圖ίο係在聚矽氧透鏡被模製在基台晶圓上之led上之後 且在分割基台晶圓之後之一單一 LED及基台基板之一橫截 面圖。 圖11係展示用在本發明之一實施例令之各種步驟之一流 程圖》 【主要元件符號說明】 10 發光二極體（LED)晶粒 12 基台晶圓 14 η型層 I57827.doc •13- 201216526 15 作用層 16 p型層 18 金屬電極 20 金屬電極 22 陽極金屬墊 24 陰極金屬墊/導電通孔 26 支撐膜 28 磷光體/聚矽氧層 32 保護膜 60 聚矽氧透鏡 157827.doc -14-201216526 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode (LED), and in particular to an LED laminated on a submount substrate A technique such as laminating a phosphor layer on an LED. [Prior Art] Figure 1 of the prior art continues with a conventional flip chip LED die 10 mounted on a portion of a substrate wafer 12. In a flip chip, both n-type and p-type contacts are formed on the same side of the LED die. The LED die 10 is formed of a semiconductor crystal layer (including an n-type layer 14, an active layer 15 and a p-type layer 16) grown on a growth substrate such as a sapphire substrate. In Figure 1, the growth substrate has been removed by laser stripping, etching, grinding, or by other techniques. In one example, the lining layer is based on GaN and the active layer 15 emits blue light. A metal electrode 18 electrically contacts the p-type layer 16, and a metal electrode 2 turns electrically into contact with the n-type layer 14. In one example, the electrodes 18 and 2 are gold pads of the anode metal pad 22 and the cathode metal pad 24 soldered to a ceramic substrate wafer 12 by ultrasonic waves. The abutment wafer 12 can be any suitable material that includes Shi Xi. The abutment wafer 12 has conductive vias 24 that are directed to the bottom metal pads "and" bonded to a printed circuit board. A plurality of LEDs (such as 2000) are mounted on the base wafer 12 and the base wafer 12 will then be cut to form individual led/stations. 2 is a simplified top plan view of one of the LED dies 1 mounted on the abutment wafer 12, and FIG. 3 is a simplified cross-sectional view of one of the portions of the wafer 12 of FIG. After the LED die 1 is mounted on the abutment wafer 12, an underfill 157827.doc -4- 201216526 material (such as polyoxyn oxide) can be dispensed under each LED die 10 to fill the LED die 10 A gap from the underlying surface of the abutment wafer 12. Further details of the LEDs can be found in U.S. Patent Nos. 6,649,440 and 6,274,399, the entire disclosures of each of which are incorporated herein by reference. When an array of LED dies 10 are mounted on abutment wafer 12 or after wafer 12 is diced, it is well known to deposit a phosphor on each lEd die to produce any desired color of light. The use of blue LED dies 10 to produce white light is well known by, for example, spraying or spin coating a phosphor into a binder, electrophoresis, applying a light body to a reflective cup, or other methods. The YAG phosphor or red and green phosphors are deposited directly on the grains J 〇 . It is also known to attach a preformed brick of phosphor (e.g., a sintered phosphor or phosphor in a binder) to the top of the LED die. The blue light leaking through the phosphor combines with the light of the phosphor to produce white light. When the phosphor layer is formed on the led die 10, the problem of difficulty in producing a very uniform phosphor layer thickness and density is included. Any variation in thickness or density will result in uneven color on the surface of the LED die. One of the scales is more uniform and allows for color testing of the brick before it is attached to the LED die; however, each tile (eg 1 square millimeter) is precisely attached to an LED crystal The top surface of the pellet 10 is both difficult and time consuming. U.S. Patent No. 7,344,952, the entire disclosure of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all SUMMARY OF THE INVENTION One of the objects of the present invention is to provide a procedure for mass producing phosphor-converted LEDs. Another object of this month is to propose a method of efficiently laminating a laminated film on an LED die. Therefore, an embodiment of a method of manufacturing an LED device is proposed as follows. First, the method includes a first step of arranging at least one of the LED dies on a substrate. Next, a pre-formed laminate layer is mounted on the lED die. The fourth layer and layer L includes an adhesive or other material having a first surface and a second surface, and the laminated layer is supported by a support film on the first surface. The binder may contain phosphor particles. The support film is held on the first surface when the layer is mounted on the LED die. Thereafter, the layer is thermally heated to a first temperature to soften the layer, and heating permits a hermetic seal between the layer and the substrate to surround one of the at least one LED die. After removing the support film, the laminate is heated to a second temperature in a vacuum to remove air between the laminate and the substrate. In one embodiment of the invention, the structure can then be exposed to ambient air pressure, which causes the laminate to abut against the surface to thereby conform the laminate to the LED die. The fluorine seal prevents air from entering from below the laminate. An array of such high quality stacked LEDs can be fabricated simultaneously on a wafer and then the wafer is diced. Therefore, the proposed method is well suited for mass production of high brightness uniform LEDs and overcomes the major drawbacks of the prior art. The method allows a uniform fill of the laminated layers to be formed on the LED dies. The program can be used to laminate any thin, delicate layer on the LED die. 157827.doc 201216526 Many variations of the above examples are foreseen = LEDs can be flip chip, or have top and bottom electrodes, or only top electrodes. [Embodiment] The same or equivalent elements are denoted by the same reference numerals. The prior art LED die 1 and the base wafer 12 of Figures 1 through 3 are used in the example to describe the lamination procedure of the present invention', but the invention is applicable to any type of LED die and base wafer . In addition, the program uses a batch production program of one of the devices, but the program is easily adapted to use a different device to manufacture a smaller number of scale-converting LEDs. In one embodiment, the 'LED die 1 emits blue or UV light and is formed of an epitaxial GaN layer'. One embodiment of the inventive procedure will be described with reference to the flowchart of Figure u in conjunction with the progressive structure of Figures 4-10. In step 20 of Figure 11, an LED wafer can be fabricated using any suitable technique that can be prior art (as described with reference to Figure i). In step 22, the LED wafer is then diced (e.g., by sawing) and the LED dies are mounted on a substrate wafer (such as the pedestal wafer 12 described with reference to Figures 3). In one example, there are about 2000 LED dies mounted above the abutment wafer. A substrate can be dispensed under each LED die. An optional encapsulation step can be performed to form a layer of polyoxane for protection on the LED dies and to increase light extraction. At step 24, referring to Figure 4, a roll of support film 26 is provided. The support film 26 may be one of commercially available ethylene tetrafluoroethylene (ETFEHI (polymer)) of about 50 microns thick, 30 cm wide and 15 mm long. Other sizes are also suitable, such as 157827.doc 201216526. The support film 26 is set as a small piece. Or - ribbon. «4 light private and poly; ^ oxygen or other suitable point mixture to form a liquid ' and the liquid is sprayed or otherwise deposited on the branch film 26 in a continuous process - The predetermined thickness (a continuous application of a roll). In one embodiment, a YAG phosphor (yellow-green) is used. In another embodiment, the red and green discs are mixed. Any of the light-filling bodies, which can be combined with LED light to produce any color, the thickness of the layer of light and the combination of the thickness of the light body or the light-breaking body are selected such that the LED die and (several The light emitted by the combination of phosphors has a target white point or other desired color. In one embodiment, the phosphor/polyoxygen layer will be about 30 microns to 200 microns thick. Other inert inorganic particles (such as light scattering materials) (eg, dioxide dioxide, Ti〇2)) can also be included in In the poly-liquid, or only the non-phosphorus material is included in the slurry. In another embodiment, only transparent poly-stone oxygen is used, and poly-stone oxygen having different refractive indices is used to manufacture various poly-stone layers. Next, when the branch (four) 26 is unrolled, the liquid is dried, such as by infrared raying other heat sources. Figure 4 shows the resulting dry fill/polyoxylate layer 28 in step 30, A protective film of the coffee (4) is placed on the dry plexite/polygonite layer 28 in a continuous process. The protective film 32 is initially provided as a roll and may have a thickness of about 25 microns and Other dimensions with the same % of support film. If the floor film 26 is formed as a small piece and the top surface of the scale/polyurethane layer 28 is not subject to potential damage contact, no protection is required (4). /Polymer oxygen layer 28 will not be damaged in the absence of protective film 157827.doc 201216526 Bad 'There is no need for a protective film. Roll up the sandwich structure of Figure 4 to laminate the LED die in a base crystal later Used in the upper circle. The protective film 32 prevents contact with the phosphor/polyoxygen during the rolling up of the structure. 28. Both the support film 26 and the protective film 32 are not strongly attached. To the phosphor/polyoxygen layer 28. • The color conversion of the phosphor/polyoxygen layer 28 can be tested and matched to a particular LED die to produce a certain The peak wavelength of the range. Different rolls or sheets of phosphor/polyoxygen layer 28 having different characteristics can be fabricated when laminating LED dies having different characteristics. In step 34, a phosphor/polyoxygen layer is assumed A roll of 28 has been selected to be laminated to the LED dies so that the roll is mounted on a stacking system that dispenses the roll at a rate. In step 36, and as shown in FIG. When the sandwich phosphor/polyoxygen layer 28 is wound out, the protective film 32 is continuously removed because it is no longer needed. Next, the light body/polyoxygen layer 28 and the support film 26 are cut into substantially the same dimensions (if desired) as the base wafer 12, such as 4 inches, 4 inches, or other dimensions. Figure 6 depicts a portion of the non-phosphor/polyoxygen layer 28 and the support member 26 of the cutting member. In step 40, the phosphor/polyoxygen layer 28 is mounted face down on the substrate wafer 12. A fiducial on the wafer 12 can be used to align the cutting components. In step 42, as shown in Figure 7, a first lamination step is performed. The phosphor/polyoxygen layer 28 is heated to 4 〇〇 c to 12 in a chamber (to make it soft and cause the phosphor/polyoxygen layer 28 to adhere to the led die) Top 157827.doc 201216526. A vacuum is created in the chamber, and a downward mechanical pressure system, such as applied to the surface of the support film 26 by an elastic crucible, a diaphragm or compressed air. Uniform pressure causes the phosphor/ The polysilicon layer 28 is formed to hermetically seal around one of the perimeters of the substrate wafer 12 and to facilitate uniform adhesion of the phosphor/polyoxygen layer 28 to the top surface of the LED die 1 due to the relative stiffness of the support film 26 and [The high density of the ED die 10] The phosphor/polyoxygen layer 28 and the substrate 10 between the die 10 can have no contact or little contact. The support film 26 contributes to mechanical stress. Protecting the phosphor/polyoxygen layer 28 during application and preventing the filler/polyoxygen layer 28 on the LED die i from deforming during this first lamination step. If only vacuum is sufficient to create a perimeter seal, then Pressure. In step 44, the structure is removed from the chamber, cooled to room temperature and removed, for example by using tape. The film 26 is shown in Fig. 8. The hermetic seal around the periphery of the substrate wafer 12 prevents air from filling between the phosphor/polyoxygen layer 28 and the substrate wafer 12. If it can be held in the cavity The process of executing the floor film 2 6 can be performed in the room. In step 46, a second lamination process is performed. The structure is placed in a vacuum chamber and heated to about 13 (TC) High temperature, and a vacuum is generated to remove the remaining two gases between the phosphor/polyoxygen layer 28 and the abutment wafer 12. Since the support film 26 has been removed, the air can pass through the thin phosphor / polylithic The small holes in the oxygen layer 28 are discharged. Generally, the temperature during the second lamination process is higher than the temperature used during the lamination process to cause the filler/polyoxygen layer 28 to be more easily bent/closed. The degree and program time depend on the particular material used. Generally, the time required for the '-t thin-lime light/polylithic layer 28 to remove the remaining air is 157827.doc 201216526 less than one thicker phosphor/poly Oxygen layer 28. In step 48, as shown in Figure 9, air is then allowed to enter the chamber to give the chamber Pressurizing 'this causes the heated/softened phosphor/polyoxygen layer 28 to abut the leD die 10 and the abutment wafer 12 such that the phosphor/polyoxygen layer 28 is placed against the led die 10 and encapsulated The LED die 1 〇. The perimeter seal prevents this air from entering between the phosphor/polyoxygen layer 28 and the substrate wafer 12. In step 50, as shown in Figure 1A, compression molding is used to select one. Polyoxyl lens 60 is molded over each of the LED dies, and then the pedestal wafer 12 is diced by sawing to separately mount the phosphor-converted LED dies, as shown in FIG. One of the granules. The dual lamination process allows the support film 26 to remain on the phosphor/polyoxygen layer 28 until the phosphor/polyoxygen layer 28 is fully supported by the LED die 1 and the abutment wafer 2 Produces a perimeter seal. Next, in the second stack (four), the close-package occurs in the absence of the support film 26. Many variations of the above mass production procedures are available. The temperature, the size of the steps, the order of the steps (such as cutting the part (if needed) before or after removal of the protective film 32), the use, the LED die and the abutment are included in the process of processing the phosphor/polymer layer 28 The type of wafer, the addition of the polyoxygen encapsulating layer, and the like may not be flip chip and may be formed of any suitable material. In an embodiment, light scattering particles (such as dioxide or ruthenium (6) are added to the polysulfide (or other binder material) encapsulation layer, or the transparent polyoxo may have no additives but have a choice The refractive index is maximized to extract light from the die 10. (for example) for white point tuning, scattering plus phosphor conversion or other 157827.doc 201216526 way multiple layers can be cascaded by repeating the above techniques for each layer The light-filling/polyoxygen layer 28 on each other need not be directly laminated on the LED die 10, but may be laminated on an encapsulation layer or lens (such as polyfluorene oxide) or other layers that have been formed on the led die 10. By separating layer 28 from the LED die, there are some benefits such as less grain absorption from backscattered light and improved color uniformity. For example, 'phosphor/polyoxygen layer 28 can be stacked in Figure 1 The lens 6 is used to form the lens 6 on the LED die 10 first using a compression forming process performed on the filled abutment wafer 12. The lamination procedure can be applied to any size abutment wafer or any Other types of substrates, even only One of the LED dies. The substrate need not have metal electrodes or other interconnecting functions. While specific embodiments of the invention have been shown and described, it will be apparent to those skilled in the art The scope of the patent application is subject to change and modification. Therefore, all such changes and modifications that fall within the true spirit and scope of the present invention are covered by the scope of the patent application. For example, The layers to be layered, whether the program is used for mass production, and other factors select the various steps in the program flow chart of Figure u. [Simplified Schematic] Figure 1 is mounted on a base substrate or an abutment wafer. - Partially - cross-sectional view of prior art blue or UV LED dies. Figure 2 is mounted on a base wafer <LED day granules - simplified top view 0 157827.doc -12. 201216526 Figure 1 is a simplified cross-sectional view of one of the wafers of Figure 2. Figure 4 illustrates a phosphor/polyoxygen layer sandwiched between a support film and a protective film. The wafer can be dispensed into a roll and For (for example) 30 cm χ 150 m long. Figure 5 shows the protective film that is gradually removed just before the sheet is unrolled on the led die stacked on a base wafer. Figure 6 shows that after the protective film has been removed and in the phosphor / The polysilicon layer has been cut to substantially match the phosphor/polyoxygen layer on the support film after the size of the abutment wafer. Figure 7 illustrates the change by heating and experiencing a first lamination procedure on the LED die. Soft phosphor/polyoxygen layer. Figure 8 shows the support film removed because the phosphor/polyoxy layer is supported by the lEd die and the abutment wafer. Figure 9 shows a second stacking process. Where the phosphor/polyoxynitride layer is in close contact with the LED die and encapsulates the LED die. Figure ίο is after the polyoxyn lens is molded on the ledger on the base wafer and on the split substrate wafer One of the cross-sectional views of one of the single LED and the base substrate. Figure 11 is a flow chart showing one of the various steps used in an embodiment of the present invention. [Major component symbol description] 10 Light-emitting diode (LED) die 12 Abutment wafer 14 η-type layer I57827.doc • 13- 201216526 15 Working layer 16 p-type layer 18 Metal electrode 20 Metal electrode 22 Anode metal pad 24 Cathode metal pad / conductive via 26 Support film 28 Phosphor/polyoxygen layer 32 Protective film 60 Polyoxyl lens 157827.doc -14-