TW201216491A - Method for thin film silicon photovoltaic cell production - Google Patents

Abstract

This invention relates to a solar cell arrangement and to a process for manufacturing thin film silicon-based solar cells. It particular addresses the topic of reducing the active layer thicknesses significantly by advanced light trapping. The invention proposes a solar cell arrangement with an extent > 1.4 m<SP>2</SP> in tandem configuration comprising an a-Si Cell (4) and a μ c-Si cell (10), the absorber layer of the a-Si cell (4) having a thickness of 210 nm ± 20 nm, the absorber layer of the μ c-Si cell (10) having a thickness of 900 nm ± 200 nm.

Description

201216491 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a process for fabricating a thin film germanium-based solar energy. In particular, the issue of significantly reducing the thickness of the layer by advanced light trapping is focused. [Prior Art] The viewpoint provided by photovoltaic solar energy conversion is to provide a % protection device for power consumption. However, in the current state, the power supplied by the monthly b conversion unit is still significantly more expensive than the power of the conventional one. Therefore, in the development of more cost-effective photovoltaic energy conversion unit devices in recent years, the film 矽 Taichi pool combines several advantageous forms: first, the film 矽 solar power The viewpoint of providing a synergistic effect by a known product technique such as plasma enhanced chemical vapor deposition (PECVD) to reduce manufacturing in the past, for example, in the field of other thin film deposition techniques (for example, the experience gained) Cost. Secondly, the film 矽 Taichi can strive to achieve high energy conversion efficiency of 1% or higher. It is used for manufacturing/special film; the main raw materials of the 5th solar cell are both sufficiently toxic. A thin film solar cell usually includes continuous stacking. In a base-first electrode, or a plurality of semiconductor films p_i_n or a first electrode. Figure 1 shows a tandem thin film solar cell known in the art. This type of thin film solar cell 50 is usually at 41. Include a first or front electrode 42 and one or more semi-conductive batteries to actively generate photovoltaic power generation system. The film sink is made of i field. The third is the solar energy, and there is no joint on the material and the joint surface. The substrate film 201216491 pin joint (52-54, 5 Bu 44-46, 43) and a second Or the back electrode 47. The female Pin junction 51, 43 or the thin film photoelectric conversion unit includes an essentially intrinsic i-type | 53, 45 which is sandwiched between the -p-type layers 52, 44 and the η-layer 54 46 (ρ-type = positive-changing) , type 11 = negative doping). In this context, "intrinsically intrinsic" is understood to mean undoped or substantially unexpressed. Photoelectric conversion occurs mainly in this ruthenium layer; therefore, it is also referred to as an "absorption layer." Depending on the crystal fraction (crystallinity) of the type 1 layer 5 3, 4 5 , the characteristics of the solar cell or photoelectric (conversion) device are classified into amorphous (amorphous germanium (aS!), 53) or microcrystalline ( Microcrystalline germanium hc_Si), 45) solar cell, regardless of the crystallinity type of the adjacent P-type layer and the n-type layer. As is common in the "microcrystalline" layer of technology, it is understood to be a layer composed of a majority of crystalline cerium (so-called microcrystalline) in an amorphous matrix. The stack of junctions is called a series or triple junction photovoltaic cell. As shown in the figure, a combination of amorphous and micro-day p-i.n junctions is also referred to as a "non-microcrystalline tandem battery". Figure i shows a prior art tandem junction film lithography photovoltaic cell. Its thickness is not drawn to scale. [Summary of the Invention] Eunuchs use low thickness, the ancient cost of the thin-film solar cell, the main cost factor - still the thickness of the layer (especially the i-type layer. Thickness such as 'for non-microcrystalline tandem battery However, in ancient times, the range of the bottom cell of 曰γ ^ ^ ^ ^ 5 φ r ° alkali is usually 1.5 μιηη or even thicker. This thick scorpion X is changed to thin film solar cells in many aspects. The cost of ownership of the manufacturer. a. The duration of the deposition itself and subsequent plasma cleaning. The duration of the sedimentation system (eg, 'pecvd') is long. Since -4- 201216491 processing time seriously affects all This kind of manufacturing system is usually the main investment cost. ~ In addition, the gas used for deposition and cleaning also has a huge impact. Specially burned SlH4 and gas source gas (for example, _3, Yangwon: When the degree can be reduced) The present invention is a solar cell of the present invention. It is a solar cell device of the present invention. The method for manufacturing the solar cell device according to the eighth aspect of the patent is to be achieved. The further embodiments of the present invention are described in detail in the appended claims. The present invention relates to a solar cell device. The tandem configuration has an area greater than 1.4 m and includes an amorphous germanium (a_si) battery and a microcrystalline germanium (μο-Si) battery, the amorphous germanium battery having an absorber layer having a thickness of 21 〇 nm ± 20 nm. The absorption layer of the microcrystalline germanium battery has a thickness of 9 〇〇 nm ± 200 nm. In order to realize a high performance module with reduced layer thickness, there are two key criteria. One is the high uniformity of the layer above the entire glass. Sex, because at low layer thicknesses, the current generated by photovoltaics becomes more sensitive to changes in the yield. The battery is farther away from the saturation current. In this case, small fluctuations in the ^ can cause large current differences. Al. m The activity of yue will reduce the total efficiency due to current limitation. This is shown in the 2nd nr (3) (simulation for amorphous yttrium). , -5- 201216491 ”:: Guidelines for achieving good light trapping " "Capture" means too - the ability of the battery to illuminate the light. The countermeasures for Wen Shanguang's capture behavior are reflective coating, texturing or rough-formed tc〇 layer, and in addition, for example, extending light at absorption thickness Φ &gt; , ' r 隹 and any step of the effective path in the layer. The layer thickness of a product is determined by two factors - light capture can be achieved with a low thickness in the case of good light trapping Light absorption. The limit of material quality "U high thickness can not extract the generated charge carriers, because the charge carriers before the arrival of the electrode layer ^ Figure. Figure 3 shows how improved light capture to make the best efficiency to lower The thickness (also simulated for amorphous bismuth) although the above-mentioned series is shown to be for amorphous, is the same for the non-microcrystalline type shown in Fig. 1, for example. The tandem junction solar cell has an industrial-grade high-performance thin layer i. Zhan Tian Gu &amp; The big de-energy module is now made by using the same homogenous deposition equipment, for example (Sw ^ ^ - -t,,, Tools TC〇12〇° and KAI1200. For the best light capture, one of the contact layer and the back contact layer must be better. 、, σ名贝布 Introduces a έ® flap back Reflector (white foil). Disperse reflection when the film is too defensive. (4) 'This white plaque replaces white; Thai: See Figure 4. In that case, the thickness can be achieved without loss of the bottom battery. See Fig. 5. ～ 相 ί Ϊ 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能It is the best and the best, and the non-absorbable 201216491 layer has a homogeneity of 5%. The solar cell device that has been proposed or proposed to change includes 25% turbidity, and preferably unless it contradicts, Otherwise a variant that can be combined with any of the bodies, according to the invention a ZnO transparent conductive oxide layer having a deposition by LPCVD. The solar cell device according to the present invention includes - as a variant, which can be combined with any variant proposed or proposed, unless it is inconsistent The transparent conductive oxide layer of the ZnO back electrode has a turbidity homogeneity of 1% and is preferably deposited by LpcvD. It can be combined with any variant proposed or proposed, unless otherwise contradicted. In a variant, the solar cell device according to the invention comprises, as a reflector, a white crucible, preferably a poly(butyric acid), preferably with white reflective particles, and preferably having a G 5 mm Thickness. A solar cell device according to the present invention has less than 100% light-induced degradation in addition to any variant that has been proposed or proposed to be combined, unless otherwise contradicted. In a variant of the solar cell device according to the invention in combination with any variant proposed or intended to be modified, the amorphous Austenitic battery comprises a 10 nm 矽P-type layer, a 210 nm a_Si:H absorbing layer, a 30 nm η plastic layer, and the microcrystalline germanium battery includes a 24 nm p-type layer, a 9 μm με-Si: germanium absorption layer, and a 36 nm n-type layer. The present invention further includes a fabrication The solar cell device method 'Ehai solar cell device serial configuration has a larger area and includes an amorphous crushed battery and a microcrystalline broken battery'. The amorphous crushed 201216491 pool (4) has an absorption layer of 2 1 0 nm ± 20 nm thickness The absorption layer of the microcrystalline germanium battery has a thickness of 900 nm ± 200 nm, and the method comprises the following steps: • depositing an absorber layer of an amorphous germanium battery by PECVD with the following deposition parameters:

• Flow rate of SiH4: 10.4 slm • Flow rate of H2: 10.4 slm • Deposition rate: 3.35 person/s • Deposition time: 6 3 4 seconds • Pressure: 0.5 mbar • Temperature: 2 0 〇0 C • Power: 380 W; - The absorption layer of the microcrystalline germanium battery was deposited by PECVD with the following deposition parameters: • Flow rate of SiH4: 7.7 slm • Flow rate of H2: 17〇slm • Deposition rate: 5A/S • Deposition time: 1 8 3 0 seconds • Pressure. 2.5 Barr • Temperature: 160 °C • Power: 3500 W. In a variant of the method according to the invention, which may be combined with any variant to be proposed, unless otherwise contradicted, the apparatus further comprises a Zn〇 transparent conductive oxide layer having a haze of 25% and comprising the following Deposition of the parameters LPCVD deposition of the Zn layer: 201216491

• Temperature.: 1 8 0 °C • Flow of H2: 577 seem • Flow of B2H6: 400 seem • Flow of Η2〇: 2460 seem • Flow of DEZ: 2200 seem • Pressure: Ο · 5 mbar. In a variant that can be combined with any variant proposed or proposed, unless otherwise contradicted, the amorphous tantalum cell comprises a 10 nm Shi Xi p-type layer, a 210 nη a-Si, in accordance with the method of the present invention. : a H-absorbing layer, a 30 nm n-type layer, the microcrystalline cell comprises a 24 nm p-type layer, a 900 nm pc-Si:H absorption layer and a 36 nm n-type layer, and the method comprises the following steps : - Deposition of the p-type layer of an amorphous tantalum battery with the following deposition parameters: • Flow rate of SiHU: 5.64 slm • Flow of Η 2: 1 0 · 5 8 s 1 m. • Three sheds (TMB) flow: 6.45 slm

• Flow rate of C Η 4: 1 0.2 6 s 1 m • Deposition rate: 2.6 A/s • Deposition time: 39 seconds • Pressure: 0.5 mbar • Temperature: 200 °C • Power: 295 W; - Deposition with the following deposition parameters The n-type layer of the amorphous germanium battery: • Flow of SiH4: 0.86 slm • Flow of Η 2: 9 5 s 1 m 201216491

• Flow rate of Ρ Η 3: 1.0 2 s 1 m • Deposition rate: 1 A/s • Deposition time: 300 sec • Pressure: 2 mbar • Temperature: 200 °C • Power: 1 800 W; - Deposition with the following deposition parameters The p-type layer of the microcrystalline germanium battery: • Flow of S i Η 4: 1.6 s 1 m • Flow of Η 2 : 2 0 0 s 1 m • Flow of trimethoate (TMB): 0.5 slm • Deposition rate: 1.4 A/s • Deposition time: 1 7 5 seconds • Pressure: 2.5 mb ar

• Temperature: 160 °C • Power: 3100 W; and - The n-type layer of the microcrystalline germanium battery is deposited with the following deposition parameters: • Flow of SiH4: 6.21 slm • Flow of Η 2: 1 4.3 6 s 1 m • Ρ Η Flow rate of 3: 4 s 1 m • Deposition rate: 2 A/s • Deposition time: 180 seconds • Pressure: 〇_5 mbar • Temperature: 160 °C • Power: 700 W. Unless otherwise contradicted, it may be combined with any of the proposed or proposed changes -10-201216491 in accordance with the deposition of the hairline layer and the absorbing layer. The u-product contains a water vapor flushing device unless it is inconsistent, otherwise one of the body bonds is changed, jj and any proposed or proposed variable process is transmitted to U0f, according to the method of the present invention, the water vapor flushing The buried system is carried out at a vapor pressure of A ^ 4 ^ mbar during 120 seconds. Unless there is a contradiction, otherwise a variant of the body is combined with: a transformation that has been proposed or proposed, and 1 ^ according to the method of the invention, the p-type layer between the amorphous tantalum battery and the 7 The housekeeper's “steam flushing process between the sediments of the mat is performed during the 120 seconds with the helium pressure of the 2 mbar ##, and the p-type layer between the microcrystalline 与 and the absorbing ^ ^ TS r.. The steam rinsing treatment between the sediments of the day is performed at a vapor pressure of 丨T without [Embodiment] during 120 seconds. The invention is further illustrated with the aid of the drawings. The figure i shows that the prior art tandem junction film is still 5 (thickness is not drawn to scale) ^ arrow &gt; ^ 11 is the direction in which the light is not illuminated. The series connection surface comprises a substrate 41, a front electrode 42, a bottom cell 43, a p-type doped germanium layer (p μο-Si. H) 44, an i-type 屛', a soil-enhanced pc-Si: η 45, an n-type Doped sarcophagus layer (n a-Si : H/n μο-Si : Η) 46, 呰 band*, body electrode 47, back reflector 48, top cell 5 P-type doped layer (... ι: Η/ρ — :Η) 52, type 1 layer a-Si : Η 53, n-type doped yttrium layer (n a_si : H/n :

54. J Figure 6 shows a series of junctions in accordance with the present invention in the form of a so-called non-microcrystalline stack (miCr〇morph) junction. The tandem bread = front contact layer 3 having a thickness of 1_55 μηι, amorphous 201216491 tantalum layer 4 having a thickness of 21 〇 nm, pC-Si:H layer having a thickness of 900 nm, having! 55 μιη thickness of back contact layer 1 1 and white foil 1 3 » The present invention proposes a method for producing a thin film battery having a reduced absorption layer thickness at a high stable power over a large area of more than i 4 m 2 in the following manner Method: a) using a highly homogeneous high turbidity front contact layer to enhance light capture capability over the entire deposition area; and b) using a white foil with improved reflective properties as a back reflector; c) by adding a semiconductor layer Homogenization to reduce the effect of the thickness difference of the layer; and d) to reduce the sensitivity to the degradation of the amorphous ruthenium by reducing the thickness of the ruthenium layer. The absorbing layer (丨-type layer 3 45) in the series connection configuration shown in Fig. 1 can be reduced to _ soil 2 〇 nm and to the bottom for the top battery S1. In the case of the bag pool 43, it can be reduced to 9 〇〇 ± 200 nm. This can be achieved without compromising the rate of stability. In the prior art, the top cell 5 1 i &amp; 1 Λ 实现 achieved has a thickness of about 300 nm, and the bottom cell 43 is about 45 μm. With the aid of the present invention, the material cost and time can be reduced by a factor of 1/3 for the top battery. The thickness of the bottom battery can be reduced almost! This 皙ρ β m 乂 疋 疋 because (i) in the active parts of the solar panel, the half V body layer has been negatively negative to +-5%; and (ii) The homogeneity of the LPCVD Ζη layer was improved to 丨〇0/U /〇/kun turbidity uniformity; and (iii) 25% high turbidity. All these achievements #also s, . . You can use a good light limit or light capture. As a white-backed layer of the back-reflective layer 48, the whites provide excellent back reflections, and light scattering thus contributes to the _ 'good light limitation. The improved reflection provides more light to the 201216491 top battery, making thinner batteries possible. Another point is that the thinner top cell (amorphous germanium) exhibits a lower degradation (Staebler-Wr〇nski effect). Thereby, the total deterioration of the tandem junction battery is significantly reduced to less than 10%. The quality of the bottom cell is improved by an improved treatment between the p-type layer and the i-type layer (1 2 mbar for a water vapor rinse of 120 seconds). The performance of the bottom battery is enhanced and the improved light capture provides a very thin battery. 8. A battery having the structure according to Fig. 1 and having advantages according to the present invention comprises a front electrode 42 made of M LPCVD ZnQ t , a top/bottom cell structure of Ρΐη_Ρ1Γ1 from Shi Xi, and a back electrode 47 ' made of LPCVD Zn〇. This is followed by a chalk reflector. Preferably, the white fall is a polyvinyl butyral foil provided with white reflective particles or equivalents thereof. The first 42 electrodes have an average haze of 25% of the homogeneity of + /-10%. ^! ATC0 Deposition Tool's improved load-locking system to help, &&quot;capture. The relevant description of the load lock is described in the following manner: two at the load lock temperature of the second s system C, 2 〇〇SCcmtB2 2〇〇seem DEZ (diethylzinc 6〇sc: dream if γ H2〇 is deposited at 0.5 mbar. The pin structure is 1 η right, the top cell of Dan W, the 矽P-type layer of nm, and the i-type sound of 2 10 nm (n-type layer of nm ^ ♦孓 layer UA: Η), 30 main increase. The bottom cell presents an inherent 矽^ 妁Ρ layer of 24 nm η Μ , 900 nm ' 7 (gc-Sl : H) layer and the thickness of the final 36 _ layer The n-type layer of 矣t. The absorption difference is as mentioned above, p-type layer + / -20%. The difference in soil thickness is between -13 and 201216491, and steam treatment (water rinsing) is performed. The process is set forth in US Pat. No. 7,504,279, the disclosure of which is hereby incorporated herein by reference in its entirety in its entirety in the the the the the the the the the Second, the pin矽 structure is followed by a TCO ZnO back electrode 47 fabricated by LPCVD. The deposition parameters are as follows: load lock temperature 180t: H2 577sccm, B2H6400sccm , H2O 2460 seem, DEZ 2200 seem, process pressure 0.5 mbar. The entire stack is terminated by a white foil with a thickness of 0.5 mm.

SiH4 slm h2 slm TMB slm ph3 slm ch4 slm DR A/s Dep ts Pressure mbar Temperature Dep °c Power watt P _5.64 10.58 6.45 10.26 2.6 39 0.5 200 295 I -' — 10.4 ——— 10.4 3.35 634 0.5 200 380 N — — __0.86 95 1.02 1 300 2 200 1800 P -- 1.6 200 0.5 1.41 175 2.5 160 3100 I 7.7 170 5 1830 2.5 160 3500 N 6.21 L--- 14.36 4 2 180 0.5 160 — 700 TMB = trimethylboron , DR = deposition rate, Dep t = deposition time, all given values apply to the 1.4 m2 substrate to be coated. The order of the layers is as shown in Figure 1 and deposited. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a tandem junction film 矽 photovoltaic cell according to one of the prior art; FIG. 2: a diagram showing Jsc related to the thickness of the i-type layer; FIG. 3: A graph of the thickness-dependent stable Eta; Figure 4: A plot of the total reflectance associated with the wavelength; -14- 201216491 Figure 5: A diagram showing the P mpp associated with the thickness of the bottom cell. Figure 6: Figure 1 of a series connection of the present invention [Description of main components] 3 front contact layer 4 amorphous germanium layer 10 pc-Si: germanium layer 11 back contact layer 13 white f each 41 substrate 42 front electrode 43 bottom battery 44 p-type layer 45 i-type layer 46 n-type layer 47 back electrode 48 back reflector 50 series junction film 矽 photovoltaic cell 51 top cell 52 Ρ type layer 53 i-type layer 54 η-type layer

Claims (1)

201216491 VII. Patent application scope: 1. A solar cell device having a serial arrangement having an area greater than 1.4 m2 and comprising an amorphous germanium (a-Si) battery and a microcrystalline germanium (pc-Si) battery ( 1)) The absorbing layer of the amorphous bismuth battery (4) has a thickness of -210 nm ± 20 nm, and the absorbing layer of the microcrystalline germanium battery (10) has a thickness of 900 nm ± 200 nm. 2. The solar cell device of claim 2, wherein the absorbing layer has a homogeneity of ± 5%. The solar cell device of claim 2, wherein the ZnO transparent conductive oxide layer (3) has a haze of 25% and is preferably washed by LPCVD. 4. The solar cell device according to any one of claims 3 to 3, comprising a transparent conductive oxide layer (11) as a Zn0 back electrode, having a turbidity homogeneity of 1% It is preferably deposited by LPCVD. 9 5·If you apply for a patent scope! The solar cell device according to any one of the preceding claims, comprising a white foil (13) as a back reflector, preferably a polyvinyl butyral white foil, preferably with white reflective particles. And the preferred crucible has a thickness of 0.5 mm. 6. If you apply for a patent scope! The solar battery device described in any one of the items 5 has a light-induced deterioration of less than 1%. 7. The solar cell device according to any one of claims 1-6, wherein the amorphous radiant battery (4) comprises a stone-like p-type layer of -i〇.nm, a 210 nn^a_si: H absorption The layer, the type 11 layer of -3〇1^, and the microcrystalline germanium battery (1〇) comprises a 24 n_p type layer, a pc-Si of 201216491: a germanium absorption layer and a 36 nm n type layer. 8. A method of fabricating a solar cell device having a tandem configuration having an area greater than 1.4 m2 and comprising an amorphous tantalum cell (4) and a microcrystalline germanium cell (10), the non- The absorbing layer of the wafer battery (4) has a thickness of 210 nm ± 20 nm, and the absorbing layer of the microcrystalline germanium battery (10) has a thickness of 900 nm and a thickness of 200 nm, and the method comprises the following steps: The absorption layer of the amorphous tantalum battery (4) was deposited by PECVD with the following deposition parameters: • Flow rate of S i Η 4: 1 0.4 s 1 m • Flow rate of Η 2 : 1 0.4 s 1 m • Deposition rate: 3.35 A/s • Deposition time · · 6 3 4 sec • Pressure: 0 _ 5 mb ar • Temperature: 200 ° C • Power: 380 W ; and - The absorption of the microcrystalline germanium battery (1 0) is deposited with the following deposition parameters PEC VD Layer: • Flow of S i Η 4: 7.7 s 1 m • Flow of Η 2: 1 7 0 s 1 m • Deposition rate · · 5 A/s • Deposition time: 1 830 seconds • Pressure: 2.5 mb ar • Temperature : 160 °C • Power: 3500 W. The method of claim 8, wherein the device advance comprises a ZnO transparent conductive oxide layer (3) having a haze of 25%, and the method comprises depositing the Zn0 layer by LPCVD with the following deposition parameters. : • Temperature: 180°C • Flow of H2: 577 seem • Flow of B2H6: 400 seem • Flow of H20: 2460 seem • Flow of DEZ: 2200 seem • Pressure · · 〇.5 mbar. The method of claim 8 or claim 9, wherein the amorphous germanium battery (4) comprises a 1 〇 nm 矽p-type layer, a 210 nm a-Si: Η absorption layer, and a 3 An n-type layer of 0 nm, the microcrystalline cell (1 〇) includes a p-type layer of 24 nm, a pc-Si of 900 nm: a ytterbium absorption layer and a -36 nm η plastic layer' and the method comprises The following steps: - depositing the p-type layer of the amorphous tantalum battery (4) with the following number of deposition tables: • Flow rate of SiH4: 5.64 slm • Flow rate of H2: 10.58 slm • Flow rate of trimethylboron (TMB): 6.45 slm • CH4 Flow rate: 10.26 slm • Deposition rate: 2.6 A/s • Deposition time: 3 9 seconds • Pressure: 0.5 mbar • Temperature: 200 °C • Power: 295 W; 201216491 - Deposition of the amorphous tantalum battery with the following deposition parameters (4 The n-type layer: • Flow rate of S i Η 4 · _ 0.8 6 s 1 m • Flow rate of Η 2: 9 5 s 1 m • Flow rate of Ρ Η 3: 1.0 2 s 1 m • Deposition rate: 1 person /s • Deposition time: 300 seconds • Pressure: 2 mbar • Temperature: 200 ° C. Power: 1 800 W; - Deposition of the microcrystalline germanium battery with the following deposition parameters (1 0) of the p-type layer: • Flow rate of S i Η 4: 1.6 s 1 m • Flow rate of Η 2: 2 0 0 s 1 m • Flow rate of triammonium (TMB): 0.5 slm • Deposition rate: 1.4 A/s • Deposition time: 1 7 5 seconds • Pressure: 2.5 mbar • Temperature: 160 °C • Power: 3100 W; and - Deposit the n-type layer of the microcrystalline germanium battery (10) with the following deposition parameters: • Flow rate of SiH4: 6.21 slm • Flow rate of Η 2 · · 1 4 · 3 6 s 1 m • Flow rate of Ρ Η 3: 4 s 1 m • Deposition rate: 2 A/s -19- 201216491 • Deposition time: 180 Seconds • Pressure: 0.5 mbar • Temperature: 160 °C • Power: 700 W. 11. The rinsing treatment is included between the deposition of the p-type layer and the deposition of the absorbing layer as described in any one of claims 8 to 10. The method of claim 11, wherein the washing treatment is carried out at a vapor pressure of 1.2 mbar during a period of 120 seconds. The method of claim 11, wherein the crystal crucible The deposition vapor rinsing treatment of the p-type layer of the battery (4) with the absorbing layer is carried out at 2 mbar during 10 20 sec, and the p-type layer and the accretion by the microcrystalline enthalpy (10) This steam rinsing treatment was carried out at a vapor pressure of 1,200 seconds. The method is carried out by a steam of water vapor. The water pressure pressure layer between the two is 1.2 mbar -20-