201216395 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種電蒙處理裝置。 【先前技術】 種用 在 自以往以來’在半導體裝置的製造領域等中，係使用〜 以將氣體呈傭狀齡導體晶群的基板供給 =¾ =:室内設置有用以載臟的載置台，】 。該翻’在面賴置台的對向面，設置有複數2 在上述的電漿淋狀朝基板供給。 仆，而；Ρ田脊要k裝置中為了使處理室内的氣體流動均一 ，而減從載置口的周圍對下方進行排氣之構造，此為吾 之電ΐ處頭!處理室的上方進行排氣之方式所構成 ’ 裝 匕亦為σ人所知(例如參照專利文獻1)。 對面ί:ίίί:?輯理裝置，具有:在處理室中所設的 tit 知悉—種電漿處理裝置，其將用以使電感 1内(;‘照專/文圈獻3Γ。受介電材料圍繞之狀態，配置於處理 [習知技術文獻] [專利文獻] 1 :第2662365號公報 曰本特開平8—6侧號公報 專利文獻3 :日本特開平1G-98G33號公報 【發明内容】 [發明所欲解決的問題] 在上述的以往技術中，構造如下：係從载置台(細的周園對 4 ⑧ 201216395 . · . ίί室=方進行排氣，或是從噴頭的周圍朝處理室的上方進行 流S之氣=:供給的氣體從基板的中央部朝周邊部 面内均—性降低，以上為其問題點。二: 理室'内部的☆=====排氣流路，所以處 的空間，難以謀求裝置全體的^加不必要 在啟動時卿 低上為皆為其問題點。 加，以上皆為其問題點。〜、 $而驅動所而之顧亦增 «ΪΓΐ係f1上述以往的情況所製成’目的在於提供-種電 置，其比起以往可謀求處理的面内均-性之=種Ϊ [解決問題之技術手段] 之電漿處理裝置，其特徵為具有： 上’設於處理室内，兼當用以載置基板的载置台· 作為該===方式設於該處理具有 該基板供給之喷頭之‘之ϊίίί^^ί 與該下部電極的間隔； 』工卜杪勖，可變更 地^體’設於該上部電極的上側，將該處理室的上部開口氣密 =之排氣孔，形成於該對向面； 衣’構件’似著該上部電極的周緣部_下方突出之方式 201216395 ΐί下而可上下移動，並於下降位置中形成有 及線圈，該環狀構件所圍繞之處理空間；以 内而與該處理$=，壁卩分，赠納於介電材料製的容器 此使電感電漿隔離之狀態配置，並施加高頻電力，藉 [對照先前技術之功效] 處理性裝置，其比起以往可謀求 开了易於變更上部電極與下部電極之間的間隔。 【實施方式】 =====細内容。 電漿侧褒置的剖面構縣置的一實施形態之 渡儀職置2GG所^^頭卿二C意地顯不圖1的電 電襞侧震置200，電極板上下平本實施形態之 用電源(未圖示)的電容輕合型’以作為連接電漿形成 要部位。 丁千板電漿蝕刻裝置，來構成其主 如圖2所示’喷頭1〇〇，由 的上侧所配置的上側構件2 1與在該下側構件1 成。該等下側構件！以及上^^:構^堆疊之疊層體所構 處理之轉所構成。該飾1G $如於表面施以陽極氧化 晶圓(基板)的載置台202之方所示，以面對載置半導體 室2〇卜亦即，目2所示之下側構侔；電漿侧裝置200的處理 所示之載置台202之對向面14。 則，係配置為形成面對圖i 上述®層體10之中，在形成面 下側構件！ ’形成有多數個氣心，置口搬的對向面Μ之 f件2之間，形成有連通至該等;在下侧構件1與上側 等氣體吐出口 11，如圖2中的气頭 口之氣體流路12。該 朝基板(圖2中的下側)供給。^外係用以將氣體呈噴淋狀 .另外，於蹩層體10的周緣部 201216395 用以將氣體導入氣體流路12内的氣體導入部(未圖 又’於上述疊層體10，貫通該疊層體1〇亦即下^ 側構件2而形成有多數個排氣孔13。該等排 |之由、 機構，係如圖2中的虛線箭頭所示，以從基乳 朝基板的相反側(圖2中的上側)形成氣體流動f t下側） 該等排氣孔U，直徑為例如^麵左右，乳的 緣部(用以固定後述的環狀構件22〇之固定部^ 略呈均勻地設置著。魏孔13的數量，例如在心H (300mm)直徑的半導體晶圓之喷頭1〇〇的情 _、 個左右。排氣孔13的形狀，並不限於圓形〜2500 等；該等排氣孔13，亦可達成排出反#4忐=為例如橢圓形狀 本實施形態中，喷頭100 。另外，在 圓的外型而構成為圓板狀。靖應被處理基板即半導體晶 圖1所示之電漿蝕刻裝置200的處理室(處 =====成為圓筒^^ 成下部電極之載置台202。該載置台202，連一^ 间頻電源等之高頻電力施加裝置。 顿有未圖不之 上之側^有用以使轉體晶圓靜電吸附於1 施加直流電壓’躺藉庫倫力來靜ii辭成， ;载置台2G2 ’形成有肋使調溫㈣體 ^ _ 於载置台202的上方，以與載置台2〇2 釔酉，如圖2所示之喷頭。形成有^有丨上而面二之方 $口 202為下㈣極之—對對面電極。於噴頭電古極， 、育頭100的上部，設有氣密地封閉處理室2〇1的上部 201216395 :有ϊ;，芦控制. 式，形成為圓環狀(圓筒狀ί環狀=、2===突2出之方 狀構件220的側壁之主ι卹八.、,ς胥虿上側構件221，構成環 構件221的=件222 ’絲於該上側 突出的Φ屮却〇〇·•、上側構件221的内壁之上端部，設有朝内侧 上面之間之方式該突出部221a與下侧構件222的 環狀、縱剖3狀構牛0的内壁，設有全體形狀為圓 態中一 電材料製的娜本實施形 23G的下端部與下側構件222的上面之間H 封閉構件之0型環231。另—方面，石英容』H 巧’維持藉由上側構件221的突出部221a而朝下“二 此，在石.英容器230内部與處理室2 I = ’石英容器23_定在環狀 -全^線圈 捲繞複數戈之m 將處理空間的周圍 的ΐίϊΐ式 在本實施形態中，1CP線圈_，由中* =屬所構成。於該ICP線圈240 ’連接有未圖示的調二二 所構Ϊ機構’以可使調溫祕體於其畴的中空郎循環^方式某 45命又’該1CP線圈240，連接有未圖示的高頻電源。萨由從兮古 ^電源^^定頻率(例如45GKH邊HZ的細)之高^電 二^石央谷盗230更内側的處理空間212内使Icp ^器230的内部’採用大氣’或是以非活性氣體置 内部不產生放電的壓力(例如1330Pa(10T〇rr)以上，大氣壓以下 ⑧ 201216395 的塵力）。201216395 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to an electric treatment device. [Prior Art] It has been used in the field of manufacturing semiconductor devices, etc., in the past, in which the substrate is used to supply gas to the substrate of the conductor-shaped conductor group = 3⁄4 =: The stage is provided with a dirty mounting table. 】. The turn-up is provided on the opposite side of the surface-receiving table, and a plurality of them are supplied to the substrate in the above-described plasma shower. In order to make the gas flow in the processing chamber uniform, and to reduce the structure of exhausting from the periphery of the mounting port to the lower side, this is the top of the processing room! The structure of the exhaust gas is also known as σ (see, for example, Patent Document 1). Opposite ί: ίίί: The arranging device has: the titer in the processing chamber is known as a kind of plasma processing device, which will be used to make the inductance 1 (; 'Special / text circle 3 Γ. Dielectric 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 [Problems to be Solved by the Invention] In the above-described prior art, the structure is as follows: exhausting from a mounting table (fine peripheral garden pair 4 8 201216395 . . . . The gas flowing in the upper part of the chamber S: The supplied gas is uniformly reduced from the central portion of the substrate toward the peripheral portion, and the above is the problem. Second: the internal ☆ ===== exhaust flow Road, so the space, it is difficult to find the entire installation of the device is not necessary at the start of the Qing low as the problem point. Plus, the above are their problem points. ~, $ and drive the Gu Yizeng F1 is made in the above-mentioned past situation. The purpose is to provide a type of electricity, which is comparable to the past. A plasma processing apparatus for processing in-plane uniformity = a technical means for solving the problem, characterized in that: the upper portion is disposed in the processing chamber and serves as a mounting table for placing the substrate. The === mode is set in the process of the nozzle having the substrate supply, and the spacing between the lower electrode and the lower electrode; the "different structure" is disposed on the upper side of the upper electrode, The upper opening of the processing chamber is airtight = the venting hole is formed on the opposite surface; the clothing 'member' can be moved up and down like the way the peripheral portion of the upper electrode protrudes downwards, and is lowered in the lower position. Formed therein and a coil, the processing space surrounded by the annular member; internally and the treatment $=, the wall is divided, and is given to a container made of dielectric material, which is configured to isolate the inductor plasma and apply high In the frequency power, the processing device is compared with the conventional one, and it is easy to change the interval between the upper electrode and the lower electrode than in the related art. [Embodiment] ===== Fine content. An implementation of the section of the county The form of the ferry is 2GG. ^^头卿2C is not shown in Figure 1. The electric shock side of the electric field is set to 200, and the capacitor is lightly combined with the power supply (not shown) of the embodiment. The plasma is formed to form a desired portion. The Dingchi plate plasma etching apparatus is configured to have a main surface as shown in FIG. 2, and the upper side member 2 1 disposed on the upper side is formed in the lower side member 1 The lower member and the upper assembly of the stack are processed. The decoration 1G $ is as in the surface of the mounting table 202 on which the anodized wafer (substrate) is applied. It is shown that the semiconductor device 2 is placed facing the semiconductor device 2, that is, the lower side structure shown in FIG. 2, and the opposite side 14 of the mounting table 202 shown by the processing of the plasma side device 200. Then, it is configured to form the surface layer member 10 in the above-mentioned layer body 10 facing the figure i; 'There is a plurality of temperaments, and the pair of fins 2 of the opposing face are formed to communicate with each other; the gas outlet 11 such as the lower member 1 and the upper side, such as the gas head port of FIG. The gas flow path 12. This is supplied to the substrate (the lower side in Fig. 2). The external system is used to spray the gas. In addition, the peripheral portion 201216395 of the layer body 10 is used to introduce a gas into the gas introduction portion of the gas channel 12 (not shown in the above-mentioned laminate 10). The laminate 1 is also formed by the lower member 2, and a plurality of vent holes 13 are formed. The mechanism and mechanism of the row are as indicated by the dotted arrows in FIG. 2 to the base substrate toward the substrate. The opposite side (the upper side in FIG. 2) forms the lower side of the gas flow ft. The vent holes U have a diameter of, for example, a right side, and a rim portion of the milk (a fixing portion for fixing the ring member 22 后 described later) The number of the Wei holes 13 is, for example, about one of the nozzles of the semiconductor wafer having a diameter of H (300 mm). The shape of the vent hole 13 is not limited to a circle of ~2500. The vent hole 13 may also have a discharge counter #4 忐 = for example, an elliptical shape in the present embodiment, the shower head 100. Further, the outer shape of the circle is formed into a disk shape. That is, the processing chamber of the plasma etching apparatus 200 shown in the semiconductor crystal diagram 1 (where ===== becomes the mounting base 202 of the lower electrode of the cylinder). The station 202 is connected to a high-frequency power application device such as a cross-frequency power supply. The side of the high-frequency power supply is not used. It is useful to electrostatically adsorb the rotating wafer to 1 and apply a DC voltage. The mounting table 2G2' is formed with a rib so that the temperature regulating (four) body is placed above the mounting table 202 to be placed on the mounting table 2, 2, as shown in Fig. 2. The second side of the mouth is the bottom (four) pole - the opposite electrode. In the upper part of the nozzle, the upper part of the head 100, there is an upper part of the airtight closed processing chamber 2〇1 201216395: there is a ϊ; Control, in the form of a ring-shaped (cylindrical 环状 ring =, 2 === the main side of the square member 220 of the square member 220, the upper side member 221, constitutes a ring member Φ of the member 222' of the 221', the upper end of the inner wall of the upper member 221 is provided with an annular portion between the inner side and the upper side of the inner member 221 The inner wall of the longitudinally sectioned three-shaped cow 0 is provided between the lower end portion of the Nabha embodiment 23G and the upper surface of the lower member 222, which are all made of an electric material in a circular state. H-type ring 231 of the closing member. On the other hand, the quartz volume "H" is maintained downward by the protruding portion 221a of the upper member 221 "two, inside the stone container 212 and the processing chamber 2 I = ' The quartz container 23_ is set in the ring-to-coil winding complex m. The circumference of the processing space is ΐίϊΐ. In the present embodiment, the 1CP coil _ is composed of medium * = genus. A two-second configuration mechanism (not shown) is connected to the high-frequency power source (not shown) to connect the 1CP coil 240 to the 1CP coil 240. From the ancient ^ ^ power ^ ^ fixed frequency (for example, 45GKH side HZ fine) high ^ electric two ^ Shi Yanggu thief 230 inside the processing space 212 inside the Icp ^ 230 internal 'using the atmosphere' or The inert gas is used to set a pressure at which no discharge occurs inside (for example, 1330 Pa (10 T 〇 rr) or more, and below atmospheric pressure 8 dust of 201216395).
Trp 的1CP線圈240，可於處理空間212内的周邊部使 ^電4產生，來控制處理空間212 _周邊部之 柃’ ICP線圈240的溫度有上升之傾向，_由 夂 循環，可防止該〇>線圈細的溫度 =由制-用媒體在内部 =使t組， 觀，’且师_時_期產 環狀構件220 ’連接至升降機構27〇 Z 220 ^ ^ 外位其下側分可下降至呈包圍載置台2〇2周圍之 示使環狀構件220以及喷頭100錄下降位i之狀能。 二置台2G2的上方，形成有域置$二、 2喷op電極)100、環狀構件220所圍繞之處理空間 心ϋΐΐ可上下移動的雜構件22G來區隔處理空間212， Ϊΐρ ^ 處理1 2()k，、, 呈開啟狀態，在該狀態下可進行半導體晶圓對 閉狀i 於下降位置時’係受環狀構件220覆蓋而呈封 260升的驅動源，在本實施形態中係使用電動紅筒 間·置機構270，係採用沿著處理室201的周向以相等 驅式，ί此方式°如此’採用使用電動紅筒260之多軸 高精产咖_线__胃_麟之情形，能 间精度地控制核狀構件22G以及喷頭⑽ 201216395 多軸驅動方式，亦能容易電性地進行其協調控制。 ^ΐ6ΐ. 261 - ^ 密封U藉由例如雙重的0型環等，使升降轴261 的上氣= 施加減壓蒙氣與大氣蒙氣之間的壓力差=== :r，能_動力The TCP 1CP coil 240 can generate the electric power 4 in the peripheral portion of the processing space 212 to control the processing space 212 _ peripheral portion 柃 'the temperature of the ICP coil 240 tends to rise, _ loop, to prevent this 〇>The temperature of the coil is fine = by the medium - using the medium inside = making the t group, the view, 'and the teacher _ hour _ the ring member 220' is connected to the lifting mechanism 27〇Z 220 ^ ^ the lower side of the outer side The minute portion can be lowered to a state in which the annular member 220 and the head 100 are recorded to be lowered in position around the mounting table 2〇2. On the upper side of the second stage 2G2, a dummy member 22G in which the processing space around the annular member 220 can be moved up and down is formed to separate the processing space 212, Ϊΐρ ^ processing 1 2 ()k,,, is in an open state, and in this state, when the semiconductor wafer is closed to the lowered position, the driving source is covered by the annular member 220 and sealed by 260 liters. In the present embodiment, The electric red-tube-disposing mechanism 270 is used in the same direction along the circumferential direction of the processing chamber 201, and the method is such that the multi-axis high-precision coffee using the electric red tube 260 is used. In the case of Lin, the nuclear member 22G and the nozzle (10) 201216395 multi-axis driving method can be accurately controlled, and the coordinated control can be easily performed electrically. ^ΐ6ΐ. 261 - ^ The seal U is caused by, for example, a double 0-ring or the like, so that the upper air of the lift shaft 261 = the pressure difference between the applied decompression and the atmosphere and the atmosphere is === :r, energy_power
Ui ^ _備_嶋細度，所以 動。的周向，以相等上有複 兩_之表面所構成’於其 邱二有出導體而形成螺著固定用的貫通孔之遠接Ui ^ _备_嶋 fineness, so move. The circumferential direction is formed by the surface of the two slabs which are equal to each other.
二 iSB 100 環狀構件220以及作為上部電極的噴頭 位的電位_侧。觀，可精所致之各部 下移ί之ρ電極的喷頭係可上 201216395 制往水平方向輪大 ICP^^ 處理空間内的周邊部之電 1=的周戶=吏=電f產生，來控制 犯内的電漿之雜，能進= 理可更^密^制處理空間 #i ίίίπ m I!51 0 202 ° 半導ίϊ圓ίίϋ卢=形狀係對稱’可抑制因為用以將 稱形狀，對電漿造成之影響，可進行更均—的處理*猶之非對 在藉由上述構造的電漿蝕刻裝置2〇〇，來 f蝴之獅，首先_所示，的f 啟開口 2I5,。在此狀態下，將半導體晶圓由開口犯送入卢 ϊ至2〇1 0 ’將半導體晶圓載置於靜電2〇 電^· 附於靜電吸盤203上。 從/、靜電吸 叫接著’呈以下狀態：使環狀構件220與喷頭_下降，且關 口、215，於半導體晶圓的上方形成處理空間212。藉由真空 1 4，透過排氣孔13將處理室2〇1内的處理空間212抽真空至既^ 的真空度。 其後’從未圖示之氣體供給驗給既定流量舰定處理 (钱刻氣體）。該處理氣體’係經由噴頭1〇〇的氣體流路12從 吐出孔11呈喷淋狀供給至載置台202上之半導體晶圓。 處理室201内的壓力，係維持在既定的壓力，然後對載置台 2〇2施加既定的頻率例如13 56MHz的高頻電力。藉此，於作為 1 部^極的喷頭100與作為下部噴頭的載置台2〇2之間，產生高頻 電場，蝕刻氣體係分解而電漿化。再者，例如欲使處理空間212 =周部中之電漿密度上升等情形，可根據必要，對lcp線圈24〇 ，加高頻電力’於處理空間内的周邊部使Icp電漿產生。藉由該 等電漿，可對半導體晶圓進行均一的蝕刻處理。 201216395 在上述蝕刻處理中，因為從喷頭1〇〇 的處理氣體，係於喷頭刚分散而從多數形成，以:=給 所以不會如從處理室201的下部進行排 、排出， 的工央部朝周邊部這樣的氣體流動。因此可^4丰體 的處理氣體更加均—化。藉此，可使電漿導體晶圓 導體晶圓的各部位施以均一的韻刻處介U = 可對半 内均-性。 職賴理。亦即，可提升處理的面 理氣頻電力的施加以及處 半_= 順序相反的順序，從處理室201内送出 π / i上所述，根據本實施形態的電漿蝕刻裝置200,因Aim =====加均—化。藉此’可對半導趙晶圓的各ί 的排氣孔漿韻刻裂置細中，因為係從設於喷頭100 進订排氣’所以無須如以往的袭置，在載置台202的 ΖίϊΪ頭1〇0的周圍設置排氣路徑。因此，可I處理室2〇1 型化即半_晶圓的外徑’可謀求裝置的小 H 2mf真果設於處理t 201的上方，可從更靠近 又R1 ^处理工間之部分進行排氣，所以能有效地進行排氣。 電極)2〇m因應處來變更喷頭(上部電極)100與載置台(下部 所以τ世书^隔，而且能以少量驅動力使喷頭100容易上下移動， 所以可謀求郎能化或裝置成本降低。 此乃ίϋ發限定於上述實施賴，柯有各義改變， 電施形態中，雖說明了對載置台(下部 ΐϊ上'if喊電力之情形，但亦可囉於對下部 ° σ不同頻率的複數之高頻電力之類型的裝置等。 【圖式簡單說明】 圖1係顯示依本發明的—實施形態之電漿處理裝獅構造之 12 ⑧ 201216395 縱剖面圖。 > .The potential of the iSB 100 ring member 220 and the head of the upper electrode is _ side. Views, the parts that can be moved down by the various parts of the ρ electrode can be used on the 201216395 system to the horizontal direction of the large ICP ^ ^ processing area of the surrounding part of the electricity 1 = the week = 吏 = electricity f generated, To control the miscellaneous plasma in the guilt, you can enter the space to control the space. #i ίίίπ m I!51 0 202 ° Semi-conductor ϊ ϊ ί ϋ = 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状The shape, the effect on the plasma, can be more uniform - the treatment is not the same as the plasma etching device constructed by the above, to the lion, first _ shown, the f opening 2I5,. In this state, the semiconductor wafer is transferred from the opening to the Lu ϊ to 2 〇 10 ' to place the semiconductor wafer on the electrostatic chuck 203. The //electrostatic suction is followed by a state in which the ring member 220 and the head _ are lowered, and the gate 215 is formed to form a processing space 212 above the semiconductor wafer. The processing space 212 in the processing chamber 2〇1 is evacuated to a vacuum degree of the vacuum chamber 13 through the vent hole 13. Subsequent to the gas supply from the unillustrated, the predetermined flow rate is determined (the gas is engraved). This processing gas is supplied to the semiconductor wafer on the mounting table 202 in a shower form from the discharge hole 11 through the gas flow path 12 of the head 1〇〇. The pressure in the processing chamber 201 is maintained at a predetermined pressure, and then a high frequency power of a predetermined frequency, for example, 13 56 MHz, is applied to the mounting table 2〇2. As a result, a high-frequency electric field is generated between the head 100 as the one-pole and the mounting table 2〇2 as the lower head, and the etching gas system is decomposed and plasmaized. Further, for example, in the case where the processing space 212 = the plasma density in the peripheral portion is increased, the Icp plasma may be generated in the peripheral portion of the processing space by applying the high-frequency power to the lcp coil 24 根据 as necessary. With the plasma, a uniform etching process can be performed on the semiconductor wafer. 201216395 In the above etching process, since the processing gas from the head 1 is formed by the majority of the nozzles, the nozzles are not discharged and discharged from the lower portion of the processing chamber 201. The central part of the gas flows toward the peripheral part. Therefore, the processing gas of the body can be more uniform. Thereby, each part of the plasma conductor wafer conductor wafer can be uniformly homogenized U = can be half-in-average. Career. That is, the application of the surface power frequency power of the processing can be improved and the order of the half-_= reverse order is sent from the processing chamber 201 to the π / i, according to the plasma etching apparatus 200 of the present embodiment, because Aim = ==== plus average - chemical. In this way, the venting spurs of the semi-guided wafers can be smeared, because the venting is set from the nozzle 100, so there is no need to be placed as in the past, and the gantry is placed on the mounting table 202. An exhaust path is provided around the head 1〇0. Therefore, the I 2 of the processing chamber, that is, the outer diameter of the half wafer, can be set to be small above the processing t 201 , which can be performed from the portion closer to the R 1 ^ processing chamber. Exhaust, so it can be effectively vented. The electrode) 2〇m changes the head (upper electrode) 100 and the mounting table according to the position (the lower part is separated from the mounting table, and the head 100 can be easily moved up and down with a small amount of driving force, so that the device can be easily realized or installed. The cost is reduced. This is limited to the implementation of the above, Ke has a different meaning, in the electric form, although the description of the mounting table (the lower part of the 'if shouting power, but can also lie to the lower part σ A device of a type of a plurality of high-frequency powers of different frequencies, etc. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view showing a 12 8 201216395 plasma-structured lion-bearing structure according to an embodiment of the present invention.
[S| 2 係 聲 j—| · 剖面圖。Θ1的電漿處理裝置的重要部位構造放大顯示之縱 剖面圖。：Θ1的電襞處理裝置的重要部位構造放大顯示之縱 面圖:；、員不使圖1的電漿處理裝置的嘴頭上升之狀態之縱剖 【主要元件符號說明】 1:下侧構件 2:上侧構件 · 10 .叠層體 η·氣體吐出孔 12 :氣體流路 13:排氣孔 14 .對向面 100 :噴頭(上部電極） 200:電漿钱刻裝置 201 :處理室 . 202 :载置台(下部電極） 203 :靜電吸盤 205 :蓋體 210 :排氣管 212 :處理空間 215 :開口 220 :環狀構件 221 ··上側構件 221a:突出部 222 :下側構件 230:石英容器 13 201216395 231 : 0型環 240 : ICP 線圈 250 :片狀纜線 260 :電動缸筒 261 :升降軸 262 :固定軸 263 :氣密封閉部 270 :升降機構[S| 2 System sound j—| · Section view. An important part of the plasma processing apparatus of the crucible 1 is a longitudinal sectional view showing an enlarged view. : Longitudinal view of the enlarged structure of the important part of the electric discharge processing device of Θ1:; longitudinal section of the state in which the mouth of the plasma processing apparatus of Fig. 1 is not raised; [Description of main components] 1: Lower member 2: upper member · 10 . laminate η · gas discharge hole 12 : gas flow path 13 : vent hole 14 . opposite surface 100 : nozzle (upper electrode) 200 : plasma money engraving device 201 : processing chamber. 202: mounting table (lower electrode) 203: electrostatic chuck 205: cover 210: exhaust pipe 212: processing space 215: opening 220: annular member 221 · upper member 221a: protruding portion 222: lower member 230: quartz Container 13 201216395 231 : 0-ring 240 : ICP coil 250 : sheet cable 260 : electric cylinder 261 : lifting shaft 262 : fixed shaft 263 : hermetic sealing portion 270 : lifting mechanism