201215998 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於例如液晶顯示裝置等平板顯示器 (Flat Panel Display，以下稱FpD)等之製造中的多調式光罩 之製造方法、及使用上述多調式光罩之圖案轉印方法。 【先前技術】 例如FPD用之薄膜電晶體（Thin Film Transistor，以下稱 TFT)基板係使用於透明基板上形成有包含遮光部及透光部 之轉印圖案之光罩，經過例如5次〜6次之光微影步驟而製 造。近年來，為削減光微影步驟數，而開始使用於透明基 板上形成有包含遮光部、半透光部、及透光部之轉印圖案 之多調式光罩。 【發明内容】 [發明所欲解決之問題] 於上述多調式光罩中，例如，遮光部係於透明基板上 半透光膜與遮光膜㈣財形成Μ，半透㈣係將半 光膜形成於透明基板上而成，透光部可設為透明基板露 而成者。又’此處’所謂「依該順序」為只要不妨㈣ 者即可，亦可於膜間插人有其他臈。如此之多調式光罩 必需對半透光膜與遮光膜分別實施特定之圖案化，故藉 描繪及顯影每項至少進行2次而製造。具體而言，例: 首先’準備將半透光膜、遮光膜、及第1抗蝕膜於透明 板上依該順序積層而成之空白光罩。然後，對第i抗钮 實施第-次之料及顯影，形成覆蓋遮光部之形成區域 156466.doc 201215998 半透光部之形成區域之第1抗#圖案’將第1抗钮圖案作為 遮罩而姓刻遮光膜及半透光膜。其次，除去第1抗触圖案 而形成第2抗蝕膜，對第2抗蝕膜實施第二次之描繪及顯影 從而形成覆蓋遮光部之形成區域之第2抗蝕圖案。進而將 第2抗蝕圖案作為遮罩而蝕刻遮光膜，並除去第2抗钮圖 案。 然而，用於例如FPD用之TFT基板之製造等中之光罩與 半導體製造用之光罩相比為大型，例如一邊為5〇〇mm以上 之方形，甚至1邊為超過1〇〇〇瓜爪之方形者最近也不少故 描繪需要較長時間《另一方面，欲提高如此之FpD製品之 生產效率且降低價格之要求亦強烈。 因此，發明者著眼於對於描繪及顯影每項至少進行2次 之上述方法提高生產率之要求。χ，上述方法中，因於第 1次之描繪與第2次之描繪之間進行顯影、圖案化（蝕刻）步 驟，故必需將自描繪機卸下且藉由上述步驟而處理之光罩 中間體再次安裝於描繪機。於如此之情形時，^消除第丄 次與第2次所描繪之圖㈣之偏移而進行騎，雖讀取藉 由描繪機而形成於料上之對準標記，並以該對準標記位 置為基準實施利用騎機之適當之修正並進行描繪（稱為 對準描繪），❻即便如此亦難以完全防止位置偏移。於如 =之對準描繪時所產生之位置偏移例如根據本發明者之研 九有時會產生G.i μηι〜〇 5㈣左右，於該情形時，轉印圖案 之形成精度下降。例如，當欲利用如此之多調式光罩製作 液晶顯示^用之TFT時，作為設計值本來具有相同之線 156466.doc 201215998 寬之遮光圖案變為起因於上述位置偏移而不同之線寬，且 於面内，相當於所產生之上述位置偏移量，而沿線寬產生 分佈。 進而，根據本發明者之見解，形成根據位置不同而抗蝕 殘膜值不同之抗蝕圖案，且藉由利用該抗蝕圖案之減膜可 削減描繪及顯影之次數。具體而言，首先，準備將半透光 膜、遮光膜、及第1抗蝕膜於透明基板上依該順序積層而 成之空白光罩。然後，對第1抗蝕膜實施描繪及顯影，形 成覆蓋遮光部之形成區域及半透光部之形成區域、且半透 光部之形成區域中之抗#膜之厚度較遮光部之形成區域中 之抗I虫膜之厚度薄之第1抗触圖案。將該第1抗钱圖案作為 遮罩而触刻遮光膜及半透光膜。其次，將第1抗蝕圖案減 膜並除去半透光部之形成區域中之第1抗蝕圖案，藉此， 使遮光膜露出，形成覆蓋遮光部之形成區域之第2抗姓圖 案。進而將第2抗姓圖案作為遮罩而钱刻遮光膜，其後除 去第2抗蝕圖案。若使用如此之方法，則於製造包含透光 部、半透光部、遮光部之（即3調式之）多調式光罩時，僅進 行1次描繪步驟即可。 然而，將其應用於現實之生產步驟中，還存在幾處困 難。其U於對大型空以罩之描繪步驟中，根據位置 不同而使曝光量發生變化之技術。光罩用之描繪曝光裝置 -般而言無需描繪包含中間色之圖f ’因此雖進行用:描 繪之光束掃描’但使曝光量發生變化並不容易。 田 作為針對上述之解決方法，有以下去 Q ,. π Λ下者。日本專利特開 156466.doc 201215998 2002-189280號公報（專利文獻i)中，記載有對於空白光 罩，以相對於形成透光部之部分抗蝕劑完全被感光之曝光 量，或以比相對於形成半透光部之部分抗蝕劑完全被感光 之曝光量少之曝光量對抗姓膜進行曝光之步驟。又，日本 專利特開2005-024730號公報（專利文獻2)中，記載有對於 形成半透光部之部分，包含使用電子束描繪機或雷射描繪 機，並利用上述描繪機之解像極限以下之圖案之描繪資料 而進行描繪之抗蝕膜曝光步驟。 然而，根據本發明者之研究，不僅進行描繪步驟…一 進行藉由描繪、顯影所形成之抗蝕圖案之減膜之步驟中亦 存在困難，且發現存在技術性課題。例如，將抗敍膜減膜 之步驟中，必、需對空白光罩之形成有抗钱膜之整個面内進 仃均一之減膜。若根據面内位置不同而產生不均一之減 膜，則抗I虫劑之殘膜量變得不均一，且藉由後續步驟之钱 刻而形成之遮光部、或半透光部之線寬相對於設計值發生 變動。第-，因大型光罩為大面積，故不易維持面内之減 膜之均-性。即關鍵是將與減膜相關之反應物質面内均一 地進行供給。作為阻礙減膜之面内均一性之另—因素，可 列舉影響減膜之面内均—性之抗姓劑之減膜量依存於轉印 用圖案之形狀。具體而言，大多情況下在欲獲得之轉印用 圖案中’根據作為最終製品之裝置，有遮光部與半透光部 之疏密之分佈，或遮光部與半透光部之面積比率令有分 ㈣㈣時，❹，存在第1抗㈣案之稀疏之區域 早立面積之開口面積之比例較大之區域）令減膜速度相 156466.doc 201215998 對增大’第1抗蝕圖案之密集之區域（每單位面積之開口面 積之比例較小之區域）中減膜速度相對減少之情形。其結 果’存在正確地進行利用減膜之形狀控制變得困難，且轉 印圖案之形成精度下降之情形。特別是，因FPD用光罩中 抗蝕圖案之疏密差相對較大，故有容易出現減膜速度之不 均一性之傾向。 因此，本發明之目的在於藉由利用抗蝕圖案之減膜而削 減描繪及顯影之次數，並且提高抗蝕圖案之減膜速度之面 内均一性且提高轉印圖案之形成精度。 [解決問題之技術手段] 本發明之第1態樣係一種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、半透光部、及透光部之轉 印圖案者，且包含：準備將半透光膜、遮光膜、及抗蝕膜 於上述透明基板上依該順序積層而成之空白光罩之步驟； 對上述抗蝕膜實施描繪及顯影，形成覆蓋上述遮光部之形 成區域及上述半透光部之形成區域、且上述半透光部之形 成區域中之上述抗蝕膜之厚度較上述遮光部之形成區域中 之上述抗蝕膜之厚度薄之第丨抗蝕圖案之步驟；將上述第1 抗蝕圖案作為遮罩而蝕刻上述遮光膜及上述半透光膜，從 而使上述透明基板之一部分露出之第丨蝕刻步驟；將臭氧 供給至上述第1抗蝕圖案並將上述第1抗蝕圖案減膜，從而 使述半if光部之形成區財之上述遮光膜露出，並形成 覆蓋上述遮光部之形成區域之第2抗蝕圖案之步驟；將上 述第2抗钱作為遮罩而钱刻上述遮光膜，從而使上述半透 156466.doc 201215998 光膜之一部分露出之第2蝕刻步驟；及除去上述第2抗蝕圖 案之步驟。 本發明之第2態樣係如第丨態樣中記載之多調式光罩之製 造方法，其中於形成上述第2抗蝕圖案之步驟中，將臭氧 k 水供給至上述第1抗蝕圖案。 . 本發明之第3態樣係如第1態樣中記載之多調式光罩之製 造方法，其中於形成上述第2抗蝕圖案之步驟中，將臭氧 氣體供給至上述第1抗蝕圖案。 本發明之第4態樣係如第丨態樣或第3態樣中記載之多調 式光罩之製造方法，其中於形成上述第2抗蝕圖案之步驟 中，使上述臭氧於上述第1抗蝕圖案之表面附近產生。 本發明之第5態樣係如第i態樣、第3態樣、或第4態樣中 任-項所記載之多調式光罩之製造方法，其中於形成上述 第2抗钮圖案之步驟中，於氧或臭氧存在之環境氣體中， 對上述第1抗蝕圖案進行光照射。 本發明之第6態樣係一種圖案轉印方法，其包含下述步 驟：經由根據如第1態樣至第5態樣中任一項所記載之製造 方法製造之多調式光罩，對形成於被轉印體上之被轉印抗 膜’’、、射上述曝光光’藉此於上述被轉印抗蝕膜上轉印上 . 述轉印圖案。 [發明之效果] 根據本發明，可藉由利用抗蝕圖案之減膜而削減描繪及 ，-人數’並且提高抗蝕圖案之減膜速度之面内均一性 且提高轉印圖案之形成精度。 156466.doc 201215998 【實施方式】 如上所述，多調式光罩之製法方法巾，例如，為實現3 調式（透光部、遮光部、半透光部），必需對透明基板上形 成的2層膜實施圖案化，且必需於先前之製造方法中進行 至>、2人之“繪及顯影步驟。進而，於*調式以上之多調式 光罩中必需進行至少2次、或更多次數之描綠、顯影； 驟。因而，期待生產效率、製造成本之改良。進而，由於 複數次之描繪之圖案之相互之位置偏移而引起轉印圖案之 形成精度之下降。因此，本發明者為解決上述課題而致力 於描繪及顯影步驟之次數之削減。 首先，如圖5(a)所例示般，準備將半透光膜1〇1，、遮光 膜102’依該順序形成於透明基板1〇〇，上且於最上層形成 有抗蝕膜103,而成之空白光罩1〇b,。然後，如圖'Μ之 l〇3p’中以實線所例示般，對空白光罩l〇b，所具有之抗蝕膜 1 03貫施曝光、顯影，從而形成具有例如2段階之厚度之第 1抗蝕圖案103ρ，β其能夠藉由以相對於形成透光部之部分 抗蝕劑完全被感光之曝光量、或以較相對於形成半透光部 之部分抗蝕劑完全被感光之曝光量少之曝光量，將抗蝕膜 曝光而進行。其結果，圖5(b)所示之第“充蝕圖案ι〇3〆形 成為覆蓋遮光部110,之形成區域及半透光部115，之形成區 域，且半透光部115,之形成區域中之抗蝕膜1〇3,之厚度較 遮光部110’之形成區域中之抗蝕膜103,之厚度薄。又，所 謂遮光部110,及半透光部115·之形成區域，係指在欲獲得 之多調式光罩中，欲形成遮光部110·及半透光部115，之區 156466.doc -10- 201215998 域。 然後，將第1抗蝕圖案1〇3ρι作為遮罩而蝕刻遮光膜l〇2 及半透光膜101。其次，如圖5(b)之1〇4p,中以虛線與部分 實線所例示般，將第丨抗蝕圖案10邛，減膜，從而形成覆蓋 •遮光部110,之形成區域之第2抗蝕圖案1〇4ρ,β然後，於圖 5(c)中，例不將第2抗蝕圖案1〇4〆作為遮罩而蝕刻半透光 膜101後，將第2抗蝕圖案104〆除去完時之態樣。根據該 方法，可分別將描繪及顯影步驟之次數削減至丨次，且可 解決上述之課題。此處，所謂減膜，係指例如自抗敍圖案 1 〇 3 ρ |之露出之上部(表面)沿垂直方向使所需量之抗蝕圖案 103ρ'消失，從而使膜厚減少。 上述中第1抗蝕圖案103Ρ，之減膜可藉由例如使用電漿灰 化法將由電漿而產生之活性物質例如活性氧供給至第 蝕圖案103ρ· ’且分解並灰化（ashing)構成抗蝕膜1〇3，之有 機物而進行。然而’根據本發明者之研究，該方法中存在 不足之處。例如，藉由灰化而產生之雜質殘留於系統内， 從而存在產生遮罩圖案之缺陷之風險。進而，可知第成 蝕圖案103p’之減膜速度之面内均一性不充分。其結果正 確地進行利用減膜之抗蝕圖案之形狀控制變得困難，例 如，如圖5(〇之丨25所示，可知存在部分之轉印圖案之尺寸 形成得較預定區域小之情形。 因此本發明者就降低減膜速度之面内均—性之理由進行 積極研究。 以下’參照圖說明其理由。 156466.doc 201215998 首先第1，為滿足光罩所需之圖案線寬之均一性（例如面 内不均一性之容許值為0 2 μηι以下之規格），必需將用於減 膜之反應物質充分供給至面内。進而，認為必需進行如下 供給.即便產生依存於圖案之面内不均一而產生之消耗之 不均一，其亦不會成為減膜量之不均一之原因。 圖4係例示第丨抗蝕圖案1〇3{)，之減膜機制之剖面圖。圖* 中’ _表示減膜前之^抗钮圖案叫，之構成⑽表示 利用活性氧將第】抗㈣案1G3pl減膜之情形，⑽表示將 藉由減媒所獲得之第2抗㈣案1G4p•作為遮罩而㈣遮光 膜從而形成轉印圖案之情形。 f (bl)所不，第旧蝕圖案1〇3〆包含稀疏之區域(例 如，每單位面積之開口面積之比例較大之區域）與密集之 區域（例如，每單位面積之開口面積之比例較小之區域）。 具體而言，例如透光部120,(參照圖5(c))之形成區域相當於 稀疏之區域，遮光部110，(參照圓5(e))或半透光部115,(參照 圖5(c))之形成區域相當於密集之區域。 此處，於稀疏之區域中，因作為減膜對象之抗姓材料 (第1抗蚀圖案103P,)相對較少，故活性氧之消耗並無那麼 多。因此，稀疏之區域φ，且山决心 场1 T易成為供給至第1抗蝕圖案 103ρ之每單位面積之活性氧之供給量較藉由將第"充蝕圖 案1〇3Ρ,減膜所消耗之每單位面積之活性氧之消耗量多之狀 癌。即，不易產生活性氧之不足，且難以根據活性氧之量 限制減膜速度。 對此，於密集之區域中， 因作為減膜對象之抗蝕材料 156466.doc 201215998 (第1抗蝕圖案l〇3p，）相對充足地存在’故活性氧之消耗量 變多。因此，密集之區域中，易成為供給至第又抗钱圖案 1〇3Ρ·之每單位面積之活性氧之供給量較藉由將第^抗姓圖 案103Ρ，減膜所消耗之每單位面積之活性氧之消耗量不充分 之狀態1 ’容易產生活性氧之不^，且根據活性氧之量 分解反應受到限速，減膜速度容易局部下降。若增加減膜 時間，則上述稀疏之區域中抗蝕劑之線寬減少。 如此，可知存在受到作為減膜對象之第i抗敍圖案叫， 之形狀之影響，從而減膜速度之面内均—性下降之情形。 於該情形時，藉由減膜速度之面内均—性下降，正確地進 行利用減膜之形狀控制變得困難，如圖4(b3)所例示般轉印 圖案之形成精度下降。特別是，FPD用光罩中因抗触圖案 之疏密差相對較大，故有易顯著地出現減膜速度之不均— 性之傾向。又，減膜速度之面内均—性之下降不僅出現於 抗姓圖案之疏密差較大之情形時，亦顯著地出現於抗姓圖 案之開口面積自身之差較大之情形。 於使用電聚灰化法之方法中，因於減壓下產生電漿，故 不能自由增加用於使抗蝕劑減膜之反應種（包含活性氧）之 量。因此，認為由於抗蝕圖案之疏密或開口率之差無法避 2上述反應物質之供給不足之情形。特別是，滿足:罩所 容許之面内之線寬分佈規格較為困難。 因此本發明者就提高減膜速度之面内均一性之方法進一 步進行積極研究。其結果’最終獲得以下見解：於減膜處 理步驟中，供給至第丨抗蝕圖案103p，之每單位面積之活性 156466.doc -13- 201215998 氧之供給量較藉由將第！抗蝕圖案1〇3p，減膜所消耗之每單 位面積之活性氧之消耗量多，即，藉由利用臭氧之供給而 過量生成活性氧，從而可提高減膜速度之面内均—性。 於藉由如此之活性氧（包含臭氧）之過量供給而進行抗蝕 圖案之減膜之情形時，例如移送利用活性氧產生裝置等生 成且管理至一定濃度之活性氧（例如製成溶液或氣體”能 以特定量連續地供給至抗蝕圖案。藉此，可將一定濃度^ 活性氧持續供給至活性氧之消耗位置，故可使活性氧過量 供給：且防止由於抗蝕圖案之疏密之不同，而產生相對於 /舌性氧之消耗量而供給量不足之部分。 又’於包含氧或臭氧氣體之至少—者之環境氣體中對抗 钮圖案進行光照射’藉此’即便於產生活性氧之情形時， 將上述環境氣體連續地供給至光照射部分，亦可產生相同 之作用。又，亦可供給包含氧或臭氧之至少-者之液體 (例如純水）等代替上述環境氣體。 又與上述電漿灰化不同，因#用皇 u便用臭氧之灰化可獨立地 調整濃度與供給量，故作為抗_案之減财法有利，藉 由桃里之調整等而調節供給量容易獲得活性氧之過量狀 態。進而:亦可降低活性氧濃度且可使抗钮劑之減膜速度 下降。於該情形時，精密 铕在地D周整抗蝕劑之減膜量成為可 能0 藉由例如降低活性氧濃度且編圖案之減膜 精密地調整減膜量之情形時，藉由調整供給量 亦可-直供給-定濃度之臭氧，故可使活性氧之過量供哈 I56466.doc 201215998 成為可忐。即，所供給之活性氧較所消耗之活性氧並無變 少，故不會產生由於圖案之疏密差而引起之減膜量之面内 不均一。 例如，臭氧水濃度可於2 ppm〜15〇 ppm之範圍内進行調 ^，且可調整減膜量。4更精密地控制減膜量，較理想的 是於2 ppm〜50 ppm之範圍，進而較理想的是2卯爪〜 P P m。若將此時之臭氧水供給量換算為光罩之每單位面 積，則變成 20.0 ml/cm2 · min 〜〇1〇 ml/cm2 · _ 左右。更 適宜可為20.0 ml/cm2 · min〜〇 5〇 ml/em2 · _。只要為該 範圍之供給量，則即便於臭氧濃度較低之情形時，亦可將 活性氧之供給量設為過量之狀態，故適宜。又，該供給量 例如能以所供給之臭氧水量除以進行處理之空白光罩基板 之面積而獲得。又，臭氧濃度可藉由利用臭氧吸光度等公 知之測定裝置而測定，且可測定即將供給至抗银圖案之前 之濃度。於如此之使用臭氧之灰化方法中，可供給每單位 時間所需之量且所需濃度之臭氧，故有利。另一方面，電 漿灰化中，難以獨立地控制作$反應種之活性氧等之濃度 及其供給量’且難以消除由於抗蝕圖案之疏密差而引起之 抗敲劑減膜量之面内均一性。 臭氧之供給可將藉由臭氧產生裝置所生成之臭氧氣體， 以液體或氣體為介質供給至抗蝕圖案。或，藉由一面將包 含氧或臭氧中至少-者之介質令或介質供給至抗蝕圖案， 一面對供給部分照射紫外線，可使活性氧於抗钱圖案之表 面附近產生。此時，於抗蝕圖案表面附近所產生之活性氧 156466.doc •15- 201215998 因壽命失活之前即被抗蝕劑之減膜所消耗，故較佳。此 時，為使活性氧之生成充分，較佳為將包含氧或臭氧中至 少一者之介質連續地供給至上述光照射部分。 根據本發明者之研究，藉由採用如此之方法，形成於多 調式光罩之半透光部與遮光部之圖案線寬（即，半透光膜 圖案與遮光膜圖案之線寬）可接近於遮罩之設計資料所提 供之設計值。又，即便設計值與實際之線寬產生特定之差 異’亦可使該產生之差異於面内均一。 本發明係基於本發明者所提出之上述見解者。 〈本發明之第1實施形態> 以下，參照圖1及圖2對本發明之第丨實施形態進行說 明。圖1係本第1實施形態之多調式光罩1〇之製造步驟之流 程圖。圖2係表示使用多調式光罩10之圖案轉印方法之剖 面圖。 (1)多調式光罩之製造方法 (空白光罩準備步驟） 首先，如圖1(a)所例示般，準備將半透光膜1〇1、遮光膜 102依該順序形成於透明基板1〇〇上、且於最上層形成有抗 蝕膜103之空白光罩i〇b。 透明基板1〇〇主要由作為包含含有例如石英（si〇2)玻璃、 或 si〇2、ai2〇3、b2〇3、R0(R為鹼土 金屬）、R2〇(R2為鹼金 屬）等低脹玻璃等之平板而構成。透明基板1〇〇之主面（正面 及背面）經研磨等平坦且平滑地構成。透明基板1〇〇可設為 例如一邊為2000 mm〜24〇0 mm左右之方形。透明基板1〇〇 156466.doc -16 - 201215998 之厚度可設為例如3 mm〜20 mm左右。 半透光膜101包含含有鉬（Mo)或钽（Ta)等金屬材料與矽 (Si)之材料’且包含例如M〇Si、MoSi2、MoSiN、 MoSiON、MoSiCON、TaSix等。半透光膜101構成為可使 用氟（F)系之蝕刻液（或蝕刻氣體）而進行蝕刻。又，半透光 膜1 〇 1具有對包含含有硝酸鈽銨（(NH4)2Ce(N03)6)及過氣酸 (HCIO4)之純水之絡用触刻液之姓刻耐性，且作為如後述 般使用鉻用蝕刻液蝕刻遮光膜1 〇2時之蝕刻終止層而發揮 作用。 遮光膜102實質上含有鉻（Cr)。又，若於遮光膜1〇2之表 面積層有Cr化合物（CrO、CrC、CrN等）（未圖示），則遮光 膜102之表面可具有反射抑制功能◎遮光膜1〇2構成為可使 用上述之鉻用蝕刻液而進行蝕刻。 抗蝕膜103可由正型光阻劑材料或負型光阻劑材料而構 成。於以下之說明中，將抗蝕膜103作為由正型光阻劑材 料而形成者。抗蝕膜103可使用例如狹縫塗佈機或旋轉塗 佈機等而形成。 (第1抗钮圖案形成步驟） 其··人’對空白光罩1 〇b利用雷射描繪機等進行描繪曝 光，使抗蝕膜103感光，將顯影液供給至抗蝕膜1〇3並進行 顯影，從而形成覆蓋遮光部110之形成區域及半透光部US 之形成區域之第I抗蝕圖案103P。將形成有第蝕圖案 l〇3p之狀態例示於圖1(b)。如圖1(b)所示，第^抗蝕圖案 103P形成為半透光部115之形成區域中之抗蝕膜1〇3之厚^ 156466.doc -17- 201215998 較遮光部110之形成區域中之抗蝕膜1〇3之厚度薄。又，所 謂遮光部110或半透光部115之形成區域係指欲獲得之多調 式光罩1〇中，欲形成遮光部110或半透光部115之區域。 如此，為形成厚度不同之第1抗蝕圖案103ρ，可使用例 如以下之方法。根據以下之方法，可藉由i次描繪與i次顯 影處理而形成具有2個以上之殘膜量之第1抗蝕圖案103p。 具體而言’於準備上述之空白光罩l〇b進行描繪時，於形 成透光部120之區域’應用使抗蝕膜1〇3完全感光之曝光 置，又，於形成半透光部115之區域，應用較使抗蝕膜1〇3 完全感光少之曝光量《就該描繪方法之詳細情況，以下舉 出2個例子進行闡述。 (a)利用半劑量描繪之方法 將編排有遮光部11〇、透光部12〇及半透光部U5之全部 之圖案資料之遮罩圖案之合成資料以如圖6(a)所示般，包 含遮光部資料1 l〇d、透光部資料12〇d、及半透光部資料 11 5d之情形作為例子。於該情形時，將遮罩圖案之合成資 料分離為圖6(b)所示之遮光部資料丨丨〇d及透光部資料 120d、與圖6(c)所示之半透光部資料n5d。此處，上述資 料之分離時，遮光部資料u〇d可包含於圖6(c)之半透光部 資料側。於使用正型抗蝕劑之情形時，因遮光部資料11〇(1 為無法進行描繪之部分，故無論根據哪一種之資料分離方 法，於以後之描繪步驟中表示相同之結果，故不會產生問 題。而且，以抗蝕膜103可完全除去之曝光量（100%)對透 光。卩120之形成區域進行描繪後，以抗蝕膜103完全被感光 156466.doc 201215998 之曝光量之大約一半之曝光量對半透光部115之形成區域 進行描繪，藉此，可進行圖6(a)所示之圖案之描綠。再 者，就透光部120之形成區域與半透光部115之形成區域之 描繪之順序而言，雖順序不同，但哪一個在先均可。於抗 姓膜103上（正抗#劑上之描繪例）描繪上述圖6(a)所示之描 繪圖案時之曝光量之分佈如圖7所示。即，區域c(透光部 120之形成區域）之曝光量為100% ’區域A(半透光部115之 形成區域）之曝光量為50%，區域B(遮光部11〇之形成區域） 之曝光量為0%(未曝光）。半透光部之曝光量並不限定於上 述之值’例如可設為30%以上70%以下。只要為該範圍， 則抗蝕殘膜量作為蝕刻時之遮罩不會產生不良，且可在明 確保持抗蝕膜之較厚之部分與較薄之部分之邊界之狀態下 進行精度之較高之減膜。 繼而，如作為圖7之I-Ι剖面圖的圖8(a)所示，以圖7所示 之曝光分佈進行描繪之情形時，以區域B未曝光，區域a 曝光、顯影後之膜厚為區域B之殘膜值之大約一半之方式 調節描繪時之曝光量。於區域c進行抗蝕圖案化時，提供 抗蝕劑完全被除去之足夠之曝光量。例如，作為此時之描 . 繪方法，利用雷射描繪機以曝光量1〇〇%之光量進行區域匸 . 之描繪後，以曝光量％%左右之光量進行區域a之描繪。 就區域A、C之描繪順序而言哪一個在先均可。 其次，如圖8(b)所示般，以具有膜厚差之方式對抗蚀膜 1〇3進行顯影。此時’抗蝕膜1〇3之膜厚為區域a為區域b 之大約-半左右，區域C為完全被除去之狀態。又，此 156466.doc •19- 201215998 處’雖將半透光部115之形成區域（區域A)之曝光量設為 50% ’但根據所需之殘膜值，可於例如20%〜80%左右之範 圍内進行變更。藉由如此般變更曝光量，可達到顯影後所 需之殘膜值而形成區域A。本第1實施形態中，可於如此般 一個步驟中連續地進行描繪。 (b)利用未解像圖案描繪之方法 其次’對其他抗蝕圖案形成方法進行說明。於該方法 中’亦使用上述空白光罩丨〇b，並使用雷射描繪機等進行 描繪。描繪圖案作為一例如圖丨〇所示般，包含遮光部圖案 1 l〇a、1 l〇b、透光部圖案12〇p、及半透光部圖案115p。此 處半透光#圖案H5p為形成有包含使用之描繪機之解像 極限以下之微細圖案（線與間隙）之遮光圖案u5a、及透過 圖案11 5 b之區域。例如， 若使用之雷射描繪機之解像極限 為2.0 μηι則圖1 〇中半透光部圖案11 5ρ中之透過圖案丨丨5b μιη ’且可將遮光圖案115a之線[Technical Field] The present invention relates to a method of manufacturing a multi-tone mask for use in manufacturing a flat panel display (FpD) such as a liquid crystal display device, and the like. The pattern transfer method using the above-described multi-tone mask is used. [Prior Art] For example, a thin film transistor (hereinafter referred to as TFT) substrate for FPD is used for a photomask having a transfer pattern including a light shielding portion and a light transmitting portion formed on a transparent substrate, for example, 5 times to 6 Manufactured by the second light lithography step. In recent years, in order to reduce the number of photolithography steps, a multi-tone mask having a light-shielding portion, a semi-transmissive portion, and a transfer pattern of a light-transmitting portion has been formed on a transparent substrate. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] In the multi-tone mask described above, for example, the light-shielding portion is formed on a transparent substrate, and the semi-transmissive film and the light-shielding film are formed, and the semi-transparent (four) system forms a semi-gloss film. The transparent portion can be formed on a transparent substrate, and the transparent portion can be formed as a transparent substrate. In addition, the term "in this order" is as long as it is possible to use (4), and other defects can be inserted between the membranes. Such a multi-mode mask is required to be specifically patterned for the semi-transmissive film and the light-shielding film, and is manufactured by drawing and developing each item at least twice. Specifically, for example, first, a blank mask in which a semi-transmissive film, a light-shielding film, and a first resist film are laminated on a transparent plate in this order is prepared. Then, the first material and the development of the ith button are formed to form a first anti-pattern of the formation region of the semi-transmissive portion that covers the light-shielding portion 156466.doc 201215998, and the first anti-button pattern is used as a mask. The last name is a light-shielding film and a semi-transparent film. Then, the second resist film is formed by removing the first resist pattern, and the second resist pattern is drawn and developed for the second time to form a second resist pattern covering the formation region of the light shielding portion. Further, the second resist pattern is used as a mask to etch the light-shielding film, and the second anti-button pattern is removed. However, the photomask used in the manufacture of a TFT substrate for, for example, FPD is larger than the photomask for semiconductor manufacturing, for example, a square of 5 mm or more on one side, and even more than 1 melon on one side. The square of the claws has recently been painted for a long time. On the other hand, the demand for improving the production efficiency of such FpD products and lowering the price is also strong. Therefore, the inventors have focused on the demand for productivity improvement by the above-described method of drawing and developing each item at least twice. In the above method, since the development and patterning (etching) steps are performed between the first drawing and the second drawing, it is necessary to remove the mask from the drawing machine and process it by the above steps. The body is again mounted on the drawing machine. In such a case, the ride is eliminated by eliminating the offset of the figure (4) depicted in the second and second times, and the alignment mark formed on the material by the drawing machine is read, and the alignment mark is used. The position is based on the appropriate correction of the rider and is depicted (referred to as alignment), and even then it is difficult to completely prevent positional deviation. The positional shift which occurs when the drawing is performed in the alignment of the image is, for example, about G.i μηι 5 to (5 (4). In this case, the formation accuracy of the transfer pattern is lowered. For example, when a TFT for liquid crystal display is to be produced by using such a multi-tone mask, the light-shielding pattern having the same line 156466.doc 201215998 as the design value becomes a line width different from the above positional shift, And in the plane, it corresponds to the above-mentioned positional shift amount generated, and the distribution is generated along the line width. Further, according to the findings of the present inventors, a resist pattern having different resist residual film values depending on the position is formed, and the number of times of drawing and development can be reduced by using the resist pattern. Specifically, first, a blank mask in which the semi-transmissive film, the light-shielding film, and the first resist film are laminated on the transparent substrate in this order is prepared. Then, the first resist film is drawn and developed to form a region where the light-shielding portion is formed and the semi-transmissive portion is formed, and the thickness of the anti-film in the formation region of the semi-transmissive portion is smaller than the formation region of the light-shielding portion. The first anti-touch pattern in which the thickness of the anti-I insect film is thin. The first anti-money pattern was used as a mask to strike the light-shielding film and the semi-transmissive film. Then, the first resist pattern is removed by the first resist pattern, and the first resist pattern in the formation region of the semi-transmissive portion is removed, whereby the light-shielding film is exposed to form a second anti-surname pattern covering the formation region of the light-shielding portion. Further, the second anti-surname pattern is used as a mask to engrave the light-shielding film, and thereafter the second resist pattern is removed. When such a method is used, it is only necessary to perform the drawing step once when manufacturing a multi-tone mask including a light transmitting portion, a semi-light transmitting portion, and a light blocking portion (i.e., three-tone type). However, there are several difficulties in applying it to realistic production steps. U is a technique for changing the exposure amount depending on the position in the drawing step of the large empty cover. The exposure device for the photomask is generally not required to draw the image f' including the intermediate color. Therefore, it is not easy to change the exposure amount although the beam scanning is performed. As a solution to the above, there are the following Q, . π Λ. Japanese Patent Laid-Open No. 156466.doc No. 201215998, No. 2002-189280 (Patent Document i) describes a exposure amount for a blank mask to be completely sensitized with respect to a portion of a resist forming a light-transmitting portion, or a relative ratio. The portion of the resist that forms the semi-transmissive portion is completely exposed to the exposure of the surname film by the exposure amount with less exposure. In Japanese Patent Laid-Open Publication No. 2005-024730 (Patent Document 2), it is described that the portion in which the semi-transmissive portion is formed includes an electron beam drawing machine or a laser drawing machine, and the resolution limit of the drawing machine is used. The resist film exposure step is depicted by drawing the following pattern. However, according to the study by the present inventors, it is difficult to perform not only the drawing step but also the step of reducing the film of the resist pattern formed by drawing and developing, and it has been found that there is a technical problem. For example, in the step of film-reducing the film, it is necessary to uniformly reduce the film in the entire surface of the blank mask formed with the anti-money film. If the film is unevenly formed according to the in-plane position, the amount of residual film of the anti-insect agent becomes non-uniform, and the line width of the light-shielding portion or the semi-transmissive portion formed by the subsequent step is relatively Changes in design values. First, because the large-sized photomask has a large area, it is difficult to maintain the uniformity of the film in the plane. That is, the key is to uniformly supply the reaction material related to the film reduction in the surface. As another factor which hinders the in-plane uniformity of the film-reducing film, the film-reducing amount of the anti-surname agent which affects the in-plane uniformity of the film-reducing film depends on the shape of the transfer pattern. Specifically, in many cases, in the transfer pattern to be obtained, 'the distribution of the light-shielding portion and the semi-transmissive portion, or the area ratio of the light-shielding portion to the semi-transmissive portion, according to the device as the final product. In the case of sub-(4)(4), ❹, there is a region where the proportion of the open area of the area of the first anti-(4) is larger in the area of the pre-existing area.) The film-reducing speed is 156466.doc 201215998 To increase the density of the 'first resist pattern In the region (the area where the ratio of the opening area per unit area is small), the film-reduction speed is relatively reduced. As a result, it has been difficult to accurately control the shape by the film reduction, and the formation accuracy of the transfer pattern is lowered. In particular, since the difference in the density of the resist pattern in the mask for the FPD is relatively large, there is a tendency that the unevenness of the film-reducing speed tends to occur. Accordingly, an object of the present invention is to reduce the number of times of drawing and development by reducing the film of the resist pattern, and to improve the in-plane uniformity of the film-removing speed of the resist pattern and to improve the formation accuracy of the transfer pattern. [Means for Solving the Problems] A first aspect of the present invention is a method of manufacturing a multi-tone mask, in which a transfer pattern including a light shielding portion, a semi-light transmitting portion, and a light transmitting portion is formed on a transparent substrate. And comprising: a step of preparing a blank mask in which the semi-transmissive film, the light-shielding film, and the resist film are laminated on the transparent substrate in this order; and drawing and developing the resist film to form the light shielding portion a formation region and a formation region of the semi-transmissive portion, and a thickness of the resist film in a region where the semi-transmissive portion is formed is thinner than a thickness of the resist film in a region where the light-shielding portion is formed a step of etching the pattern; etching the light-shielding film and the semi-transmissive film as a mask to expose a portion of the transparent substrate; and supplying ozone to the first resist a pattern in which the first resist pattern is removed, and the light-shielding film of the semi-if-light portion is exposed, and a second resist pattern covering the formation region of the light-shielding portion is formed; The second anti-money is used as a mask to engrave the light-shielding film, and the second etching step of exposing one of the semi-transparent 156466.doc 201215998 light films; and the step of removing the second resist pattern. According to a second aspect of the invention, in the method of manufacturing the multi-tone mask of the first aspect, in the step of forming the second resist pattern, ozone k water is supplied to the first resist pattern. According to a third aspect of the invention, in the method of manufacturing the multi-tone mask of the first aspect, in the step of forming the second resist pattern, ozone gas is supplied to the first resist pattern. A fourth aspect of the present invention is the method for producing a multi-tone mask according to the first aspect or the third aspect, wherein in the step of forming the second resist pattern, the ozone is caused by the first anti- Produced near the surface of the etched pattern. The fifth aspect of the present invention is the method for producing a multi-tone mask according to any of the ith aspect, the third aspect, or the fourth aspect, wherein the step of forming the second button pattern is In the ambient gas in which oxygen or ozone is present, the first resist pattern is irradiated with light. A sixth aspect of the invention is a pattern transfer method comprising the steps of forming a multi-tone mask manufactured by the manufacturing method according to any one of the first aspect to the fifth aspect. The transfer pattern is transferred onto the transfer resist film by the transfer resist film '' on the transfer target', and the exposure light is emitted. [Effects of the Invention] According to the present invention, it is possible to reduce the in-plane uniformity of the drawing speed of the resist pattern and improve the formation accuracy of the transfer pattern by reducing the film thickness by the resist pattern. 156466.doc 201215998 [Embodiment] As described above, in the method of manufacturing a multi-mode mask, for example, in order to realize a three-tone type (light transmitting portion, light shielding portion, and semi-light transmitting portion), it is necessary to form two layers on the transparent substrate. The film is patterned, and must be carried out in the previous manufacturing method to > two people's "drawing and developing steps." Further, at least two times, or more, must be performed in the multi-modulation reticle above the * modulation type. Therefore, it is expected that the production efficiency and the manufacturing cost are improved. Further, the accuracy of the formation of the transfer pattern is lowered due to the mutual displacement of the patterns of the plurality of times of drawing. Therefore, the inventors have In order to solve the above problems, the number of times of drawing and development steps is reduced. First, as illustrated in FIG. 5(a), the semi-transmissive film 1〇1 and the light-shielding film 102' are formed on the transparent substrate 1 in this order. 〇〇, a resist film 103 is formed on the uppermost layer, and a blank mask 1b is formed. Then, as illustrated by the solid line in the figure of 'Μ之〇3p', the blank mask 1 is 〇b, the resist film has been exposed Light, development, thereby forming a first resist pattern 103p having a thickness of, for example, two steps, which can be formed by exposure with respect to a portion of the resist forming the light-transmitting portion, or relatively A part of the resist of the semi-transmissive portion is completely exposed to light by a small amount of exposure, and the resist film is exposed to light. As a result, the "etching pattern ι〇3〆 shown in FIG. 5(b) is formed as Covering the light shielding portion 110, the formation region and the semi-transmissive portion 115, the formation region, and the semi-transmissive portion 115, the resist film 1〇3 in the formation region is thicker than the formation region of the light shielding portion 110' The resist film 103 has a small thickness. Further, the area in which the light-shielding portion 110 and the semi-transmissive portion 115· are formed means that the light-shielding portion 110 and the semi-transmissive portion 115 are formed in the multi-mode mask to be obtained, and the region 156466.doc -10 - 201215998 domain. Then, the light-shielding film 10a and the semi-transmissive film 101 are etched by using the first resist pattern 1〇3ρι as a mask. Next, as shown in FIG. 5(b), 1〇4p, the second resist pattern 10邛 is reduced by a dotted line and a part of the solid line, and the cover/light-shielding portion 110 is formed, and the formation region is the second. The resist pattern 1〇4ρ, β is then, in FIG. 5(c), the second resist pattern 104 is etched by etching the semi-transmissive film 101 without using the second resist pattern 1〇4〆 as a mask. Remove the end of the situation. According to this method, the number of times of drawing and developing steps can be reduced to the number of times, and the above problems can be solved. Here, the film-reduction means that, for example, the exposed upper portion (surface) of the self-reduction pattern 1 〇 3 ρ | disappears in the vertical direction by a desired amount of the resist pattern 103p', thereby reducing the film thickness. In the above-mentioned first resist pattern 103, the film can be reduced by, for example, using an electrochemical ashing method to supply an active material such as active oxygen generated by plasma to the etched pattern 103p·' and decomposed and ashed. The resist film 1〇3 is made of organic matter. However, according to the study by the inventors, there are deficiencies in the method. For example, impurities generated by ashing remain in the system, and there is a risk of causing defects in the mask pattern. Further, it is understood that the in-plane uniformity of the film-removing speed of the first etching pattern 103p' is insufficient. As a result, it is difficult to accurately control the shape of the resist pattern by the film-removing film. For example, as shown in Fig. 5 (〇25), it is understood that the size of the portion of the transfer pattern is smaller than the predetermined region. Therefore, the inventors of the present invention conducted active research on the reason for reducing the in-plane uniformity of the film-reducing speed. The following is explained with reference to the drawings. 156466.doc 201215998 First, first, to satisfy the uniformity of the line width required for the mask. (For example, the allowable value of in-plane heterogeneity is 0 2 μηι or less), and it is necessary to supply the reaction material for film reduction to the inside. Further, it is considered necessary to supply the following. Even if it depends on the surface of the pattern The unevenness of the consumption caused by the non-uniformity does not cause the unevenness of the film-reducing amount. Fig. 4 is a cross-sectional view showing the film-removing mechanism of the second resist pattern 1〇3{). In the figure *, _ indicates the pattern of the anti-button before the film is removed, and the composition (10) indicates the case where the 1G3pl film is reduced by the active oxygen (1), and (10) the case of the second antibody (4) which will be obtained by the reduction. 1G4p• As a mask and (4) a light-shielding film to form a transfer pattern. f (bl) No, the first etched pattern 1〇3〆 contains a sparse area (for example, a region with a large proportion of the open area per unit area) and a dense area (for example, the ratio of the open area per unit area) Smaller area). Specifically, for example, the light-transmitting portion 120 (see FIG. 5( c )) forms a region corresponding to a sparse region, a light-shielding portion 110 (see circle 5 (e)) or a semi-transmissive portion 115 (refer to FIG. 5). The formation area of (c)) is equivalent to a dense area. Here, in the sparse region, since the anti-surname material (first resist pattern 103P) which is the object of film reduction is relatively small, the consumption of active oxygen is not so much. Therefore, the sparse area φ and the mountain determination field 1 T are likely to be supplied to the first resist pattern 103ρ per unit area of the active oxygen supply amount by the first "corrosion pattern 1〇3Ρ, the film reduction It consumes more cancer per unit area of active oxygen consumption. That is, it is difficult to generate insufficient active oxygen, and it is difficult to limit the film-reduction speed in accordance with the amount of active oxygen. On the other hand, in the dense region, the resist material 156466.doc 201215998 (the first resist pattern l〇3p) which is a target for film reduction is relatively sufficiently present, so that the consumption of active oxygen is increased. Therefore, in a dense area, the supply amount of active oxygen per unit area which is easily supplied to the first anti-money pattern is higher than that per unit area consumed by the film of the first anti-surname pattern 103. In the state in which the consumption of active oxygen is insufficient, 1 'prone to active oxygen is easily generated, and the decomposition reaction is limited by the amount of active oxygen, and the film-reducing speed is liable to locally decrease. If the film-reduction time is increased, the line width of the resist in the above-mentioned sparse region is reduced. As described above, it is understood that there is a case where the influence of the shape of the i-th anti-synthesis pattern which is the object of the film reduction is caused, and the in-plane uniformity of the film-removing speed is lowered. In this case, it is difficult to accurately control the shape of the film by the reduction in the in-plane uniformity of the film-removing speed, and the formation accuracy of the transfer pattern is lowered as illustrated in Fig. 4 (b3). In particular, in the FPD photomask, since the difference in the density of the anti-touch pattern is relatively large, there is a tendency that the unevenness of the film-reducing speed tends to occur remarkably. Moreover, the decrease in the in-plane uniformity of the film-reducing speed occurs not only when the density difference of the anti-surname pattern is large, but also when the difference in the opening area of the anti-surname pattern is large. In the method using the electro-agglomeration method, since the plasma is generated under reduced pressure, the amount of the reaction species (including active oxygen) for reducing the film of the resist cannot be freely increased. Therefore, it is considered that the supply of the above-mentioned reaction substance is insufficient due to the difference in the density or the aperture ratio of the resist pattern. In particular, it is difficult to meet the specification of the line width distribution in the plane allowed by the cover. Therefore, the inventors of the present invention have further actively studied on the method of improving the in-plane uniformity of the film-reducing speed. As a result, the following findings were obtained: in the film-reducing treatment step, the activity per unit area supplied to the second resist pattern 103p was 156466.doc -13 - 201215998, and the supply amount of oxygen was higher than that of the first! The resist pattern 1 〇 3p has a large amount of active oxygen consumed per unit area consumed by the film reduction, i.e., excessive generation of active oxygen by the supply of ozone, thereby improving the in-plane uniformity of the film-reducing speed. In the case where the resist pattern is reduced by excessive supply of such active oxygen (including ozone), for example, transfer and generation of active oxygen (for example, into a solution or gas) generated by an active oxygen generating device or the like is performed. "It can be continuously supplied to the resist pattern in a specific amount. Thereby, a certain concentration of active oxygen can be continuously supplied to the consumed position of the active oxygen, so that the active oxygen can be excessively supplied: and the density of the resist pattern can be prevented. Differently, the amount of supply is insufficient relative to the consumption of the lingual oxygen. In the ambient gas containing at least the oxygen or the ozone gas, the light is irradiated against the button pattern, thereby generating activity. In the case of oxygen, the ambient gas may be continuously supplied to the light-irradiating portion, and the same action may be exerted. Alternatively, a liquid (for example, pure water) containing at least oxygen or ozone may be supplied instead of the above-mentioned ambient gas. In addition to the above-mentioned plasma ashing, it is advantageous to use the ash ashing of the ozone to independently adjust the concentration and the supply amount. It is easy to obtain an excess state of active oxygen by adjusting the supply amount of the peach, etc. Further, the active oxygen concentration can be lowered and the film-reducing speed of the anti-buttoning agent can be lowered. In this case, the precision is reduced in the D-week It is possible to reduce the amount of film by the agent. For example, when the concentration of active oxygen is lowered and the film is reduced, the amount of film is precisely adjusted. By adjusting the amount of supply, the concentration of ozone can be directly supplied. The excess of active oxygen is available in the form of I56466.doc 201215998. That is, the active oxygen supplied is not less than the amount of active oxygen consumed, so that no amount of film loss due to the difference in density of the pattern is produced. For example, the ozone water concentration can be adjusted within the range of 2 ppm to 15 〇 ppm, and the amount of film reduction can be adjusted. 4 More precise control of the amount of film reduction, preferably 2 ppm to 50 ppm The range is more preferably 2 jaws to PP m. If the amount of ozone water supplied at this time is converted to the area per unit of the mask, it becomes 20.0 ml/cm2 · min 〇1〇ml/cm2 · _ More suitable, it can be 20.0 ml/cm2 · min~〇5〇ml/em2 _. As long as the supply amount in this range is low, even when the ozone concentration is low, the supply amount of active oxygen can be made excessive. Therefore, the supply amount can be supplied, for example. The ozone water amount is obtained by dividing the area of the blank mask substrate to be processed. Further, the ozone concentration can be measured by a known measuring device such as ozone absorbance, and the concentration immediately before the supply to the silver resist pattern can be measured. In the ashing method using ozone, it is advantageous to supply ozone in an amount required per unit time and at a desired concentration. On the other hand, in plasma ashing, it is difficult to independently control active oxygen as a reaction species or the like. The concentration and the amount of supply thereof' are difficult to eliminate the in-plane uniformity of the anti-knocking agent film-reducing amount due to the difference in the density of the resist pattern. The supply of ozone can supply the ozone gas generated by the ozone generating device to the resist pattern using a liquid or a gas as a medium. Alternatively, active oxygen can be generated in the vicinity of the surface of the anti-money pattern by supplying a medium or medium containing at least one of oxygen or ozone to the resist pattern while irradiating the supply portion with ultraviolet rays. At this time, the active oxygen generated near the surface of the resist pattern 156466.doc •15-201215998 is preferably consumed by the film of the resist before the life is deactivated. In this case, in order to sufficiently generate active oxygen, it is preferred to continuously supply a medium containing at least one of oxygen or ozone to the light-irradiating portion. According to the research of the present inventors, by adopting such a method, the pattern line width (ie, the line width of the semi-transmissive film pattern and the light-shielding film pattern) formed in the semi-transmissive portion and the light-shielding portion of the multi-tone mask can be approximated. The design value provided by the design data of the mask. Further, even if the design value differs from the actual line width by a specific difference, the difference may be made uniform in the plane. The present invention is based on the above-mentioned insights proposed by the inventors. <First embodiment of the present invention> Hereinafter, a third embodiment of the present invention will be described with reference to Figs. 1 and 2 . Fig. 1 is a flow chart showing the manufacturing steps of the multi-mode mask 1 according to the first embodiment. Fig. 2 is a cross-sectional view showing a pattern transfer method using the multi-tone mask 10. (1) Method of manufacturing multi-mode mask (blank mask preparation step) First, as illustrated in Fig. 1(a), the semi-transmissive film 1〇1 and the light-shielding film 102 are prepared in this order on the transparent substrate 1 A blank mask i〇b having a resist film 103 formed thereon is formed on the uppermost layer. The transparent substrate 1 is mainly composed of, for example, a glass containing, for example, quartz (si〇2), or si〇2, ai2〇3, b2〇3, R0 (R is an alkaline earth metal), and R2〇 (R2 is an alkali metal). It is composed of a flat plate such as expanded glass. The main surfaces (front surface and back surface) of the transparent substrate 1 are flat and smooth by polishing or the like. The transparent substrate 1 can be, for example, a square having a side of about 2000 mm to 24 mm. The thickness of the transparent substrate 1 〇〇 156466.doc -16 - 201215998 can be set, for example, to about 3 mm to 20 mm. The semi-transmissive film 101 contains a material containing a metal material such as molybdenum (Mo) or tantalum (Ta) and germanium (Si) and contains, for example, M〇Si, MoSi2, MoSiN, MoSiON, MoSiCON, TaSix, or the like. The semi-transmissive film 101 is formed by etching using a fluorine (F)-based etching liquid (or etching gas). Further, the semi-transmissive film 1 〇1 has a resistance to a contact liquid containing a pure water containing cerium ammonium nitrate ((NH4)2Ce(N03)6) and a peroxyacid (HCIO4), and As described later, the etch stop layer is used to etch the light-shielding film 1 〇 2 with an etching solution for chromium. The light shielding film 102 substantially contains chromium (Cr). Further, when a Cr compound (CrO, CrC, CrN or the like) (not shown) is present on the surface layer of the light-shielding film 1〇2, the surface of the light-shielding film 102 can have a reflection suppressing function. ◎ The light-shielding film 1〇2 can be used. The chromium is etched by an etching solution. The resist film 103 may be composed of a positive photoresist material or a negative photoresist material. In the following description, the resist film 103 is formed of a positive photoresist material. The resist film 103 can be formed using, for example, a slit coater or a spin coater. (1st button pattern forming step) The person's blank mask 1 〇b is subjected to drawing exposure by a laser scanner or the like, and the resist film 103 is exposed to light, and the developer is supplied to the resist film 1〇3. Development is performed to form a first resist pattern 103P covering the formation region of the light shielding portion 110 and the formation region of the semi-light transmission portion US. A state in which the etched pattern l 〇 3p is formed is exemplified in Fig. 1(b). As shown in FIG. 1(b), the second resist pattern 103P is formed to have a thickness of the resist film 1〇3 in the formation region of the semi-transmissive portion 115. 156466.doc -17-201215998 is a region where the light shielding portion 110 is formed. The thickness of the resist film 1〇3 is thin. Further, the formation region of the light-shielding portion 110 or the semi-transmissive portion 115 is a region in which the light-shielding portion 110 or the semi-light-transmitting portion 115 is to be formed in the multi-mode mask 1 to be obtained. Thus, in order to form the first resist pattern 103p having different thicknesses, for example, the following method can be used. According to the following method, the first resist pattern 103p having two or more residual film amounts can be formed by i-time drawing and i-th development processing. Specifically, when the blank mask 100b is prepared for drawing, the exposure of the resist film 1〇3 is applied to the region where the light-transmitting portion 120 is formed, and the semi-transmissive portion 115 is formed. In the region, the exposure amount is less than that of the resist film 1〇3. The details of the drawing method will be described below by way of two examples. (a) The composite material of the mask pattern in which the pattern data of the light-shielding portion 11〇, the light-transmitting portion 12〇, and the semi-transmissive portion U5 are arranged by the half-dose drawing method is as shown in Fig. 6(a). The case where the light shielding portion data 1 l〇d, the light transmitting portion data 12〇d, and the semi-light transmitting portion data 11 5d is included as an example. In this case, the composite material of the mask pattern is separated into the light-shielding portion data 丨丨〇d and the light-transmitting portion data 120d shown in FIG. 6(b) and the semi-transmissive portion data shown in FIG. 6(c). N5d. Here, when the above information is separated, the light shielding portion data u〇d may be included in the data side of the semi-transmissive portion of Fig. 6(c). In the case of using a positive resist, the light-shielding part data 11〇 (1 is a part that cannot be drawn, so no matter which data separation method is used, the same result is shown in the subsequent drawing step, so it does not A problem arises. Further, after the exposure amount (100%) in which the resist film 103 can be completely removed is applied to the light-transmissive region of the 卩120, the exposure amount of the resist film 103 is completely 156466.doc 201215998. Half of the exposure amount is used to draw a region where the semi-transmissive portion 115 is formed, whereby the green pattern of the pattern shown in Fig. 6(a) can be performed. Further, the formation region and the semi-transmissive portion of the light transmitting portion 120 are formed. In the order of drawing the formation regions of 115, the order is different, but which one is prior. The drawing shown in Fig. 6(a) is drawn on the anti-soul film 103 (the drawing example on the positive anti-agent). The distribution of the exposure amount in the pattern is as shown in Fig. 7. That is, the exposure amount of the region c (the formation region of the light transmitting portion 120) is 100% 'the area A (the formation region of the semi-light transmitting portion 115) has an exposure amount of 50 %, the exposure amount of the area B (the formation area of the light shielding portion 11〇) is 0% (not exposed) The exposure amount of the semi-transmissive portion is not limited to the above-described value', and may be, for example, 30% or more and 70% or less. As long as the range is within the range, the amount of the residual resist film does not cause a defect as a mask during etching. Further, the film having a higher precision can be removed while the boundary between the thick portion of the resist film and the thin portion is clearly maintained. Then, as shown in Fig. 8 (a) of the I-Ι cross-sectional view of Fig. 7 As shown in the case of drawing in the exposure distribution shown in FIG. 7, the exposure amount in the drawing is adjusted such that the area B is not exposed, the area a is exposed, and the film thickness after development is about half of the residual film value of the area B. When resist patterning is performed in the region c, a sufficient amount of exposure for completely removing the resist is provided. For example, as a method of drawing at this time, a laser drawing machine is used to perform an amount of light of an exposure amount of 1% by volume. After the drawing of the area 匸., the area a is drawn by the amount of light of about %% of the exposure amount. Which of the areas A and C can be drawn first. Next, as shown in Fig. 8(b), The resist film 1〇3 is developed in such a manner as to have a difference in film thickness. At this time, the resist film 1 The film thickness of 3 is that the area a is about - about half of the area b, and the area C is in a state of being completely removed. Further, this 156466.doc • 19 - 201215998 is the area where the semi-transmissive portion 115 is formed (area A) The amount of exposure is set to 50%. However, depending on the residual film value required, it can be changed, for example, in the range of about 20% to 80%. By changing the exposure amount in this way, the residual film required after development can be obtained. The value is formed to form the region A. In the first embodiment, the drawing can be continuously performed in one step. (b) The method of drawing by the unresolved pattern is followed by the description of the other resist pattern forming method. In the method, the above-mentioned blank mask 丨〇b is also used, and is drawn using a laser drawing machine or the like. The drawing pattern includes, as an example, a light shielding portion pattern 1 l〇a, 1 l〇b, a light transmitting portion pattern 12〇p, and a semi-light transmitting portion pattern 115p. The semi-transmissive pattern H5p is a region in which a light-shielding pattern u5a and a transmission pattern 155b are formed with fine patterns (lines and spaces) below the resolution limit of the drawing machine used. For example, if the resolution limit of the laser drawing machine used is 2.0 μηι, then the transmission pattern 丨丨5b μιη ' in the semi-transmissive portion pattern 11 5ρ in FIG. 1 and the line of the light-shielding pattern 115a can be
料）進行一次描繪 156466.doc 之間隙寬度可設為未滿2.0 μιη，且可將 寬設為描繪機之解像極限以下之未滿2〇 間隙圖案之情形時，可根攄 •20· 201215998 將此時之曝光量作為形成有透光部12〇之區域之抗蝕膜1〇3 充分地被感光之曝光量。於是，於形成透光部12〇之區域 (圖9所示之c區域）中，抗蝕膜1〇3充分地被感光；於形成 遮光部110之區域（圖9所示之B區域）中，抗蝕膜1〇3為未曝 光（未曝光）狀態。進而’於形成半透光部U5之區域（圖9所 不之Λ區域）中’因上述遮光圖案115a無法利用描繪機解 像，故無法描繪其線寬，作為整體之曝光量變得不足。 即’於半透光部115之形成區域中可獲得與減少該形成區 域整體之曝光量並對抗蝕膜1〇3進行曝光相同之效果。描 繪後，若將其以特定之顯影液進行顯影，則空白光罩1〇b 上形成有遮光部11〇(Β區域）與半透光部U5(A區域）中抗蝕 膜103之殘膜值不同之第！抗蝕圖案1〇3p(參照圖。半 透光部115之形成區域中，因實際之曝光量較抗蝕膜1〇3完 全破感光之曝光量少，故若對抗蝕膜1〇3進行顯影，則無 法7〇全/谷解，且以較未曝光之遮光部11〇之抗蝕膜1〇3薄之 膜厚而殘存。X，透光部120中，抗敍膜1〇3成為完全被除 去之狀態。 又，包含2個以上之殘膜量之抗蝕圖案之形成方法並不 限定於上述。可藉由一面進行描繪機之光束掃描，一面根 據掃描區域變更其強度之方法等上述以外之方法根據抗姓 膜103之位置進行不同之曝光量之描繪。 (第1蝕刻步驟） 其-人，如圖1(c)所不般，將形成之第〖抗蝕圖案ι〇3ρ作為 遮罩’ ϋ刻遮光膜1〇2從而形成遮光膜圖案1〇2p。遮光膜 156466.doc 201215998 102之触刻可將上述之鉻用姓刻液利用喷霧方式等方法供 給至遮光膜102而進行濕式蝕刻。 繼而，將第1抗蝕圖案l〇3p作為遮罩，蝕刻半透光膜1〇1 而形成半透光膜圖案10 lp，使透明基板100部分露出。半 透光膜101之蝕刻可將氟（F)系之蝕刻液（或蝕刻氣體）供給 至半透光膜101而進行。如此，將形成有遮光膜圖案⑺邛 及半透光膜圖案101p之狀態例示於圖1(c)。 (第2抗蝕圖案形成步驟） 其次，將第1抗蝕圖案1 〇3p減膜，而使半透光部J〗5之形 成區域中之遮光膜1〇2露出。此時，抗蝕膜1〇3之較厚之遮 光部110之形成區域中殘留有抗蝕膜1〇3。藉此，形成覆蓋 遮光部110之形成區域之第2抗蝕圖案1〇4p。將其狀態例示 於圖1 (d)。 第1抗蝕圖案103P之減膜可將臭氧（〇3)水供給至第1抗蝕 圖案103p而進行。若將臭氧水供給至第1抗蝕圖案ι〇3ρ， 則自臭氧水產生之活性氧與抗蝕膜1〇3發生反應，並分解 構成抗蝕膜103之材料，從而將第丨抗蝕圖案1〇3p減膜。此 處，所謂活性氧，係指除臭氧自身外，包含臭氧水中臭氧 之一部分分解產生之羥基自由基（H〇.)，進而，存在於臭 氧水中之為與抗蝕膜i 0 3發生反應而具有充分之活性之氧 原子（〇)等活性物質。該減膜步驟中，無需使用真空裝 置’可於大氣中或大氣壓中進行。 又，该減膜步驟中，進行利用臭氧水之灰化時，必需於 抗蝕圖案表面均勻地且充分地進行臭氧水之供給。例如， 156466.doc -22· 201215998 臭氧水之供給前，可對抗㈣案照射紫外線光（波長200 3 80 nm)或真空紫外線光（波長1〇 〜2〇〇 而進行表 面之改質。作為上述照射之光源例如可使用低壓水銀燈、 準分子UV燈等。ϋ此，可改f抗㈣案表面，使潤濕性 均-而防止缺陷之發生，且利用改質使抗#圖案之表面物 性一致’藉此’可使減膜之開始反應之狀態一致因而可 進一步提高面内之減膜量之均一性，故較佳。 特別是，如本發明於利用臭氧水對具有微細之凹凸之抗 飯圖案表面進行灰化之情形時，#由上述紫外線光（包含 真空紫外線光）之照射，容易將臭氧水供給至微細之凹凸 部分且可進行更均一之減膜，故較佳。 然，如上所述，通常藉由電漿灰化將第!抗兹圖案i〇3p 減膜之情形時’根據^抗㈣案103p之形狀，有局部地 產生活性氧之不足，減膜速度之面内均一性下降之虞。 即’存在密集之區域中產生活性氧之不足，根據活性氧之 量分解反應受到限速，減膜速度局部下降之情形。 對此m實施形態中，規定藉由供給臭氧水進行減 膜。此處’所I胃「臭氧水之供給」，係指供給對於抗蝕圖 案之減膜超過必要之活性氧之量’而產生過量之活性氧之 臭氧。例如’可-面使基板旋轉—面供給臭氧水。藉此， 可防止活性氧之局部之不足。圖3係表示本第i實施^態之 第1抗蝕圖案l〇3p之減膜機制之剖面圖。圖3中，表示 減膜前之第1抗飯圖案吻之構成；（b2)表示藉由活性氧將 第1抗敍圖案H)3p減膜之情形；（b3)表示將藉由減膜所獲得 156466.doc -23- 201215998 之第2抗蝕圖案l〇4p作為遮罩而形成轉印圖案之情形。如 圖3所示’根據本第1實施形態’對於稀疏之區域及密集之 區域之各個，可使供給至第1抗蝕圖案1〇31)之每單位面積 之活性氧之供給量較藉由將第1抗蚀圖案10 3 ρ減膜所消耗 之每單位面積之活性氧之消耗量多。即，可成為活性氧之 過量供給狀態。其結果，可提高減膜速度之面内均一性， 且可正確地進行藉由減膜而形成之第2抗蝕圖案1〇4ρ之形 狀控制》又’臭氧水遭度可設為例如2〇 ppm〜1〇〇 ppm& 右。又’亦可使臭氧水之溫度於常溫〜5〇度左右變化。該 等對於基於抗蝕劑之種類之減膜速度之不同，可隨時獲得 最佳之條件，故有用。 (第2触刻步驟） 繼而，將第2抗蝕圖案ι〇4ρ作為遮罩，進而蝕刻遮光膜 102，從而使半透光膜101露出。遮光膜1〇2之蝕刻可將上 述之鉻用蝕刻液供給至遮光膜丨02而進行。此時基底之 半透光膜101作為蝕刻終止層發揮作用。將第2蝕刻步驟所 實施之狀態例示於圖1 (e)。 (第2抗蝕圖案除去步驟） 然後，除去第2抗蝕圖案ι〇4ρ，從而完成本第i實施形態 之多調式光罩H)之製造。第2抗触圖案叫可藉由使剝離 液等與第2抗蝕圖案10413接觸而除去。將除去第以充蝕圖案 之狀態例示於圖1(f)。 藉由以上，完成如圖1(f)中所例示之多調式光罩1〇之製 造步驟。圖1(f)所示之多調式光罩1(H㈣於例如平板顯示 156466.doc •24· 201215998 器（FPD)用之薄膜電晶體（TFT)基板之製造等。•然，圖明 係例不多調式光罩之積層結構者，實際之圖案未必與此相 同。 多調式光罩10包含之遮光部11〇、半透光部115、及透光 部120係構成為相對於具有例如i線〜g線之範圍内之代表波 長之曝光光，分別具有特定之範圍内之透過率。即，遮光 部110構成為使曝光光遮蔽（光透過率大約為〇%)，透光部 120構成為使曝光光大約透過1〇〇%。而且，半透光部ιΐ5構 成為例如曝光光之透過率為2〇%〜8〇%(將足夠寬之透光部 120之透過率設為100%時，以下同樣），較佳為減少至 3〇%〜祕左右。又，所謂遞（365 nm)、喊㈣5⑽）、§線 (486 nm)，係指水銀（Hg)之主要之發光光譜，此處所謂代 表波長係指i線、h線、g線中任一之任意之波長。又，相 對於i線〜g線中任一之波長，更佳為上述透過率者。 (2)對被轉印體之圖案轉印方法 圖2中例示根據使用多調式光罩1〇之圖案轉印步驟而形 成於被轉印體30上之抗蝕圖案3〇2p(實線部）之部分剖面 圖。抗蝕圖案302p係藉由對作為形成於被轉印體3〇上之被 轉印抗蝕膜之正型抗蝕膜302(虛線部與部分實線部）經由多 調式光罩10照射曝光光，並進行顯影而形成。被轉印體3〇 包含基板300及於基板300上依序積層之金屬薄膜或絕緣 層、半導體層等任意之被加工層301，正型抗蝕膜3〇2係於 被加工層3〇1上預先以均一之厚度而形成者。又，構成被 加工層301之各層亦可構成為對各層之上層之蝕刻液（或蝕 156466.doc -25- 201215998 刻氣體）具有耐性。 若經由多調式光罩10對正型抗蝕膜302照射曝光光，則 遮光部110中不透過曝光光，又，曝光光之光量依半透光 部11 5、透光部120之順序階段性地增加。而且，正型抗触 膜302係於與遮光部11〇、半透光部115之各者相對應之區 域膜厚依序變薄，於與透光部120對應之區域被除去。如 此’被轉印體30上形成有膜厚階段性地不同之抗蝕圖案 302p ° 一旦形成抗蝕圖案302p ’則對露出在未由抗蝕圖案3〇2p 所覆蓋之區域（與透光部120對應之區域）之被加工層3〇1自 表面側依序進行蝕刻並將其除去。然後，將抗蝕圖案3 〇2p 灰化（減膜）並除去膜厚較薄之區域（與半透光部對應之 區域），依序触刻並除去重新露出之被加工層3 〇 1 ^如此， 藉由使用膜厚階段性地不同之抗蝕圖案3〇2p，實施先前之 光罩2牧之步驟’可削減光罩牧數，且可簡化光微影法步 驟。 (3)本第1實施形態之效果 根據本第1實施形態，發揮以下所示之1個或複數個效 果。 (a)根據本第1實施形態’藉由利用第1抗蝕圖案1〇3p之減 膜’可削減描繪及顯影步驟之次數〇藉此，可提高多調式 光罩10之生產率，且可降低製造成本。又，於形成3調式 之轉印圖案時’可防止2種（遮光膜圖案化與半透光膜圖案 化）圖案間之位置偏移’故可抑制轉印圖案之形成精度之 156466.doc -26- 201215998 下降。 ⑻又，根據本第】實施形態，藉由供給臭氧水而將第! 抗姓圖案1〇3p減膜。藉由利用臭氧水，可使供給至第汁 姓圖案π)3ρ之每單位面積之活性氧之供給量較藉由將二 抗敍圖案1〇城膜所消耗之每單位面積之活性氧之消耗旦 二即’成為活性氧之過量供給狀態。藉此，可提高減： 速度之面内均一性。因此’可防止由於圖案之疏密差因 素、或錢劑開口率分佈因素所引起之減膜量之面内不均 一’提南第2抗姓圖案之花{士、姓由 案之形成精度。 …精度，且可提高轉印圖 ⑷根據本第1實施形態之方法，可獲得圖案形狀（不論疏 密差、周邊開口率）之面内均一性，配合上述⑷之效果可 更有效地進行圓案之線寬控制。具體而言，圖案線寬不背 離設計值，並^會產生設計值與實際之線寬之差異（不 為0之情形)之面内偏差。換言之，相對於設計值，不合偏 向正側或偏向負側’差異之傾向於面内為固定。因：， TFT基板之圖案等具有對稱性之圖案（例如，透光部、遮光 部、半透光部、遮光部、透光部依該順序沿一個方向排 列’相對於半透光部，位於兩側之遮光部之線寬為相同之 情形等)令’消除先前之方法中由於2次之描綠所引起之位 置偏移而無法維持該對稱性之問題。又，亦可抑制由圖案 疏推差起因及開口率起因所引起之面内之線寬變動之偏 差。 ⑷又，本第I實施形態之方法中’例如，將抗蝕劑顯影 I56466.doc •27- 201215998 與第1抗蝕圖案作為遮罩之遮光膜及半透過膜之各自之蝕 刻，將第1抗蝕圖案減膜並利用臭氧水進行第2抗蝕圖案之 灰化，將第2抗蝕圖案作為遮罩之遮光膜之蝕刻，及利用 剝離液之第2抗蝕圖案之除去，對於該等所有步驟，可進 行使用液體之濕式處理。因此，可將該等之處理於1個裝 置内連續進行，故無需使處理中途之光罩中間體於處理中 途於裝置間移動，從而減少由於微粒附著等引起之缺陷產 生之風險。又’藉由可連續地進行該等之處理，可削減步 驟間產生之無用之待機時間或移動時間’從而使總處理時 間之大幅度縮短成為可能。 <本發明之第2實施形態> 繼而，就本發明之第2實施形態進行說明。本第2實施形 態中’使用氧或臭氧氣體代替臭氧水，於其存在之環境氣 體下進行光照射，可製造臭氧氣體或含有臭氧之活性氧之 過量供給之狀態。如此，促進活性氧之生成，藉此將第】 抗蝕圖案103p減膜之方面與上述之第1實施形態不同。以 下’參照圖1就與上述之第1實施形態不同之方面進行詳細 闡述。 本第2實施形態之多調式光罩1〇之製造方法亦與上述之 第1實施形態相同，雖經圖1所例示之製造步驟，但於本第 2實施形態之多調式光罩10之製造方法中，係藉由臭氧氣 體之供給以及光照射而進行圖1(d)中所例示之第丨抗姓圖案 l〇3p之減膜。此處用於光照射之光係於氧（〇2)、或臭氧 (〇3)存在之環境氣體中’為促使用於使抗蝕膜1 〇3減膜之 156466.doc -28- 201215998 活性氧之產生之能量光，例如，可使用紫外線光（波長2〇〇 nm〜380 nm)或真空紫外線光（波長1〇 nm〜2〇〇 nm)。又，所 謂氧存在之環境氣體中，亦可為大氣中。即，藉由照射紫 外線光（uv)或真空紫外線光（vuv)，激發環境氣體中之氧 或臭氧’經分解或鍵結等而產生活性氧。又，該光照射不 僅使自％境氣體之氧生成臭氧，並最終生成活性氧，而且 有切斷形成抗蝕膜103之有機物之鍵結之作用，因而使抗 蝕膜103之灰化有效率地進行。該過程中，可有效率地使 臭氧於第1 k飯圖案1 〇3p之表面附近產生，從而將活性氧 過1地供給至第1抗姑圖案丨们口。藉此，可正確地進行藉 由第1抗蝕圖案l〇3p之減膜之第2抗蝕圖案104p之形狀控 制。該減膜步驟亦無需使用真空裝置，可與大氣壓相同或 大致相同之大氣壓中進行。又，uv* vuv可藉由公知之 照射裝置，例如低壓水銀燈或準分子uv燈等進行照射。 又，藉由氧之光反應而生成臭氧之效率較佳之波長與臭氧 進而利用光反應而生成其他活性氧之效率較佳之波長不 同。因此，進行藉由例如低壓水銀燈與準分子uv燈之二 種之光源之光照射，可提高臭氧與其他活性氧之各生成效 率 〇 於本第2實施形態之多調式光罩1〇之製造方法中，亦具 有與上述第1實施形態之多調式光罩1〇之製造方法相同之 效果。即，於本第2實施形態中，不論圖案形狀（疏密差、 周邊開口率）’均可獲得面内均一性極高之減臈行為。 正如上述第1、第2之實施態樣一樣明確，根據本發明， 156466.doc -29- 201215998 與可實現製造多調式光罩之步驟之大幅度效率化之同時 可享有對大型光罩基板、描綠機之組裝為—次之優勢 減少將相同之基板無位置偏移地重新載置於描綠機之相同 位置所需之時間與負荷。又，可避免由該再載置而產生之 位置偏移之風險。 又，本第卜第2實施形態中，利用藉由臭氧之供給之抗 钮圖案之減膜。根據該方法，可於大氣中、或於大氣中添 加有氧或臭氧之環境氣體中進行減膜處理，故極有利。另 -方面，作為抗触劑之灰化方法，雖亦可應用使用電漿之 灰化，但於該情形中，因為係液晶顯示用之大型遮罩不 僅必需準備大型之真空裝置’而且難以保持系統内之氣壓 或電漿濃度之均一性’且不易實現面内之減膜量均… 其係由於為填補活性氧之不足，若將過量之氧導入真空裝 置，則有產生電漿生成影響之虞。 又，例如錢灰化法中，雖藉由«放電，於光罩上產 生電荷之刀佈於放電所引起之圖案之破壞電聚灰化中存 在由於產生之雜質而導致之光罩之缺陷等風險，但本發明 之方法不會產生該等之不良。本發明中，無此等之不良， 進而’就不論圖案之形狀如何均可提高面内之減膜速度之 均一性之方面而言有利。 <本發明之其他實施形態> 又’於多調式光罩之製法中’除使用於透明基板100上 將半透光膜101及遮^^1G2依該順序積層而成之空白光罩 ⑽而進行之上述之方法以外，亦可使用不同之方法。 156466.doc 201215998 即’經由於對形成於透明基板上之遮光膜進行圖案化後， 成膜半透光膜，並進行圖案化之步驟而形成透光部、半透 光部、遮光部之方法。然而，前者之製造法，即上述之第 1、第2貫施形態等之方法適合應用本發明，換言之，前者 之方法就可有效應用本發明之方面而言，於生產效率上可 謂特別優異。 以上，雖對本發明之實施形態進行了具體地說明，但本 發明並不限定於上述之實施形態，於不脫離其主旨之範圍 内可作種種變更。又，上述中，雖就包含透光部、遮光 部、半透光部之3調式之多調式光罩進行了說明，但於包 含複數個透過率不同之半透光部之4調式以上之多調式光 罩中，本發明當然可適用。 【圖式簡單說明】 圖UaHf)係本發明之第！實施形態之多調式光罩之製造 步驟之流程圖。 圖2係表示使用本發明之第1實施形態之多調式光罩之圖 案轉印方法之剖面圖。 圖3(bl)-(b3)係表示活性氧過量供給時之抗蝕圖案減膜 步驟之機制之剖面圖。 、 圖4(bl)-(b3)係表示參考例之抗蝕圖案減膜步驟之機制 之剖面圖。 圖5(a)_(c)係表示參考例之多調式光罩之製 明圖。 兄 圖6係表示本發明之第1實施形態之對空白光罩的一種描 156466.doc -31- 201215998 繪方法之圖，根 係表不包含遮光部資料、透光部資料、及 ==之合成資料之平面圖，_表示自⑷所示 w系矣/ 離出之遮光部資料及透光部資料之平面圖， 二圖厂自⑷所示之合成資料分離出之半透光部資料之 上二係圖表6二於本發明之第1實施形態之空白光罩之抗餘膜 會圖咐之描㈣案時之曝光量之分佈之平面圖。 圖：It圖7之1-1之剖面圖’⑷係於抗钮膜上描繪出描繪 圖案之工白光罩之剖面圖’（b)係顯影有抗飯膜之空 之剖面圖。 工尤罩 圖9(a)-(e)係表示本發明之第i實施形態之對空白光 其他描繪方法之流程圖。 圖10係表示用於本發明之第丨實施形態之對空白光罩 其他描繪方法之描繪圖案之圖。 的 【主要元件符號說明】 10 多調式光罩 10b、 10b， 空白光罩 30 轉印體 100、 100· 透明基板 101、 101， 半透光膜 101p 半透光膜圖案 102、 102， 遮光膜 102p 遮光膜圖案 103、 103， 抗触膜 156466.doc -32- 201215998 103p 、 103p， 第1抗蝕圖案 104p 、 104p' 第2抗蝕圖案 110、110' 遮光部 110a、110b 遮光部圖案 llOd 遮光部資料 115 ' 115' 半透光部 115a 遮光圖案 115b 透過圖案 115d 半透光部資料 115p 半透光部圖案 120、120， 透光部 120d 透光部資料 120p 透光部圖案 300 基板 301 被加工層 302 正型抗蝕膜 302p 抗钱圖案 156466.doc - 33 -Material) When the gap width of 156466.doc can be set to less than 2.0 μm, and the width can be set to less than 2 〇 gap pattern below the resolution limit of the drawing machine, it can be 摅•20· 201215998 The exposure amount at this time is taken as the exposure amount of the resist film 1〇3 in which the region where the light transmitting portion 12A is formed is sufficiently exposed. Then, in the region where the light transmitting portion 12A is formed (the region c shown in Fig. 9), the resist film 1〇3 is sufficiently light-sensitive; in the region where the light shielding portion 110 is formed (the B region shown in Fig. 9) The resist film 1〇3 is in an unexposed (unexposed) state. Further, in the region where the semi-transmissive portion U5 is formed (in the region where the light-emitting portion is not shown in Fig. 9), the light-shielding pattern 115a cannot be imaged by the drawing machine, so that the line width cannot be drawn, and the exposure amount as a whole is insufficient. That is, the effect of reducing the exposure amount of the entire formation region and exposing the resist film 1〇3 can be obtained in the formation region of the semi-transmissive portion 115. After the drawing, if it is developed with a specific developing solution, the residual film of the resist film 103 in the light shielding portion 11 (Β region) and the semi-light transmitting portion U5 (A region) is formed in the blank mask 1〇b. The value is different! Corrosion pattern 1〇3p (refer to the figure. In the formation region of the semi-transmissive portion 115, since the actual exposure amount is less than the exposure amount of the resist film 1〇3 completely broken, the resist film 1〇3 is developed. However, it is impossible to solve the full/valley solution, and it remains thinner than the film thickness of the resist film 1〇3 which is not exposed to the light-shielding portion 11〇. X, in the light-transmitting portion 120, the anti-suppression film 1〇3 becomes complete. In addition, the method of forming the resist pattern including two or more residual film amounts is not limited to the above. The method of changing the intensity of the scanning area by performing the beam scanning of the drawing machine can be used. Other methods are used to draw different exposure amounts according to the position of the anti-surname film 103. (First etching step) The person-like, as shown in Fig. 1(c), forms the etch pattern ι〇3ρ The mask etches the light-shielding film 1〇2 to form the light-shielding film pattern 1〇2p. The light-shielding film 156466.doc 201215998 102 can be used to supply the above-mentioned chromium to the light-shielding film 102 by a spray method or the like. Wet etching is performed. Then, the first resist pattern l〇3p is used as a mask, and the etching is semi-transparent. The film 1〇1 is formed to form the semi-transmissive film pattern 10 lp to partially expose the transparent substrate 100. The etching of the semi-transmissive film 101 can supply a fluorine (F)-based etching liquid (or etching gas) to the semi-transmissive film 101. The state in which the light-shielding film pattern (7) and the semi-transmissive film pattern 101p are formed is as shown in Fig. 1(c). (Second resist pattern forming step) Next, the first resist pattern 1 〇 3p The film is removed, and the light-shielding film 1〇2 in the formation region of the semi-transmissive portion J is exposed. At this time, the resist film 1 remains in the formation region of the thicker light-shielding portion 110 of the resist film 1〇3. 〇3. Thereby, the second resist pattern 1〇4p covering the formation region of the light shielding portion 110 is formed. The state of the second resist pattern 1〇4p is shown in Fig. 1(d). The film of the first resist pattern 103P can be ozone (〇3) The water is supplied to the first resist pattern 103p. When the ozone water is supplied to the first resist pattern ι3p, the active oxygen generated from the ozone water reacts with the resist film 1〇3, and decomposes to form an resistance. The material of the etching film 103 is such that the second anti-corrosion pattern 1 〇 3p is reduced. Here, the active oxygen means ozone water including ozone itself. A hydroxyl radical (H〇.) which is partially decomposed by ozone, and an active substance such as an oxygen atom (〇) which is sufficiently active in the ozone water to react with the resist film i 0 3 . In the step, it is possible to carry out the supply of ozone water uniformly and sufficiently on the surface of the resist pattern when the ashing by ozone water is performed in the film-reducing step. For example, 156466.doc -22· 201215998 Before the supply of ozone water, the surface can be modified by irradiating ultraviolet light (wavelength 200 3 80 nm) or vacuum ultraviolet light (wavelength 1〇~2〇〇) against (4). As the light source for the above irradiation, for example, a low pressure mercury lamp, an excimer UV lamp, or the like can be used. ϋ , , 抗 ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四It is preferable to further increase the uniformity of the amount of film reduction in the plane. In particular, when the surface of the anti-rice pattern having fine irregularities is ashed by ozone water, the irradiation of the ultraviolet light (including vacuum ultraviolet light) is easy to supply the ozone water to the fine unevenness. It is preferred to partially and more uniformly reduce the film. However, as described above, in the case where the film is reduced by the plasma ashing, the film is in the form of the film 103p, and the shape of the film 103p is locally generated, and the deficiency of the active oxygen is locally generated. The in-plane uniformity declines. That is, there is a deficiency in the generation of active oxygen in a densely packed region, and the decomposition reaction is subjected to a rate-limiting according to the amount of active oxygen, and the film-reduction rate is locally lowered. In this embodiment, it is prescribed that the film is reduced by supplying ozone water. Here, the "supply of ozone water" refers to the supply of ozone which generates an excessive amount of active oxygen by reducing the amount of active oxygen required for the resist pattern. For example, the surface of the substrate can be rotated by the surface to supply ozone water. Thereby, the local deficiency of active oxygen can be prevented. Fig. 3 is a cross-sectional view showing the film-removing mechanism of the first resist pattern 10a3p in the i-th embodiment. Fig. 3 shows the configuration of the first anti-rice pattern kiss before the film is removed; (b2) shows the case where the first anti-synchronization pattern H) 3p is film-reduced by active oxygen; (b3) shows that the film is to be removed by the film-removing film The case where the second resist pattern l〇4p of 156466.doc -23-201215998 is used as a mask to form a transfer pattern is obtained. As shown in FIG. 3, the supply amount of active oxygen per unit area supplied to the first resist pattern 1〇31) can be made by the same according to the first embodiment of the present invention. The amount of active oxygen consumed per unit area consumed by the first resist pattern 10 3 ρ is reduced. That is, it can be in an excessive supply state of active oxygen. As a result, the in-plane uniformity of the film-removing speed can be improved, and the shape control of the second resist pattern 1〇4ρ formed by the film can be accurately performed, and the ozone water degree can be set to, for example, 2〇. Ppm~1〇〇ppm& right. Further, the temperature of the ozone water can be changed from about room temperature to about 5 degrees. These are useful for obtaining the optimum conditions at any time depending on the difference in the film-reducing speed of the type of the resist. (Second Touch Step) Then, the second resist pattern ι 4p is used as a mask, and the light-shielding film 102 is further etched to expose the semi-transmissive film 101. The etching of the light-shielding film 1〇2 can be performed by supplying the etching liquid for chromium described above to the light-shielding film 丨02. At this time, the semi-transmissive film 101 of the substrate functions as an etch stop layer. The state in which the second etching step is performed is exemplified in Fig. 1(e). (Second resist pattern removing step) Then, the second resist pattern ι 4p is removed, thereby completing the manufacture of the multi-tone mask H) of the present i-th embodiment. The second anti-touch pattern can be removed by bringing the peeling liquid or the like into contact with the second resist pattern 10413. The state in which the first etching pattern is removed is exemplified in Fig. 1(f). With the above, the manufacturing steps of the multi-tone mask 1 例 as illustrated in Fig. 1 (f) are completed. The multi-mode mask 1 shown in Fig. 1(f) is used for the manufacture of a thin film transistor (TFT) substrate for, for example, a flat panel display 156466.doc •24·201215998 (FPD). The actual pattern is not necessarily the same as the laminated structure of the tunable mask. The opaque mask 10 includes a light shielding portion 11 〇, a semi-transmissive portion 115, and a light transmitting portion 120 which are configured to have, for example, an i-line. The exposure light having a representative wavelength in the range of the ~g line has a transmittance in a specific range. That is, the light shielding portion 110 is configured to shield the exposure light (the light transmittance is approximately 〇%), and the light transmitting portion 120 is configured to The exposure light is transmitted through approximately 1%. Further, the semi-transmissive portion ι is configured such that the transmittance of the exposure light is 2% to 8% by weight (when the transmittance of the sufficiently transparent light-transmitting portion 120 is 100%) , the same as the following), preferably reduced to 3〇%~ secret. Also, so-called (365 nm), shouting (four) 5 (10)), § line (486 nm), refers to the main luminescence spectrum of mercury (Hg), The representative wavelength refers to any wavelength of any of the i line, the h line, and the g line. Further, it is more preferably the above transmittance with respect to any of the i-line to the g-line. (2) Pattern transfer method for the transfer target body FIG. 2 illustrates a resist pattern 3〇2p (solid line portion) formed on the transfer target body 30 according to the pattern transfer step using the multi-tone mask 1〇. Partial profile view. The resist pattern 302p is irradiated with exposure light via the multi-mode mask 10 by a positive resist film 302 (a broken line portion and a partial solid line portion) which is a transfer resist formed on the transfer target 3A. And developed to form. The transfer target 3 includes a substrate 300 and a metal thin film or an insulating layer or a semiconductor layer which is sequentially laminated on the substrate 300, and the positive resist film 3〇2 is attached to the processed layer 3〇1. It is formed in advance with a uniform thickness. Further, each of the layers constituting the processed layer 301 may be formed to have resistance to an etching liquid (or a gas of 156466.doc -25 - 201215998) on the upper layer of each layer. When the positive resist film 302 is irradiated with the exposure light through the multi-mode mask 10, the light is not transmitted through the light-shielding portion 110, and the amount of light of the exposure light depends on the order of the semi-transmissive portion 115 and the light-transmitting portion 120. Increase in land. Further, the positive-type anti-contact film 302 is thinned in a region corresponding to each of the light-shielding portion 11A and the semi-transmissive portion 115, and is removed in a region corresponding to the light-transmitting portion 120. Thus, the resist pattern 302p having a film thickness stepwise formed on the transfer target body 30 is exposed to the region not covered by the resist pattern 3〇2p (the light transmissive portion is formed once the resist pattern 302p' is formed). The processed layer 3〇1 of the region corresponding to 120 is sequentially etched from the surface side and removed. Then, the resist pattern 3 〇 2p is ashed (reduced film) and the thin film region (the region corresponding to the semi-transmissive portion) is removed, and the re-exposed processed layer 3 〇 1 ^ is sequentially struck and removed. In this way, by using the resist patterns 3〇2p having different film thicknesses in stages, the step of performing the previous masking of the mask 2 can reduce the number of masks and simplify the photolithography step. (3) Effects of the first embodiment According to the first embodiment, one or a plurality of effects described below are exerted. (a) According to the first embodiment, the number of times of drawing and developing steps can be reduced by using the film-reducing film of the first resist pattern 1〇3p, whereby the productivity of the multi-mode mask 10 can be improved, and Reduce manufacturing costs. Moreover, when the transfer pattern of the three-tone type is formed, it is possible to prevent the positional shift between the two types of patterns (the patterning of the light-shielding film and the pattern of the semi-transmissive film), so that the formation accuracy of the transfer pattern can be suppressed 156466.doc - 26- 201215998 fell. (8) Further, according to the first embodiment, the first anti-surname pattern 1〇3p is reduced by supplying ozone water. By using ozone water, the supply amount of active oxygen per unit area supplied to the juice pattern π) 3ρ can be made smaller than the consumption of active oxygen per unit area consumed by the second anti-pattern 1 film. Once the second is 'to become the excess supply state of active oxygen. Thereby, the in-plane uniformity of the reduction: speed can be improved. Therefore, it is possible to prevent in-plane unevenness due to the density difference of the pattern or the distribution factor of the opening ratio of the money agent, and the accuracy of the formation of the flower of the second anti-surname pattern of the second anti-surname pattern. Accuracy and improvement of the transfer pattern (4) According to the method of the first embodiment, the in-plane uniformity of the pattern shape (regardless of the density difference and the peripheral aperture ratio) can be obtained, and the effect of the above (4) can be more effectively performed. The line width control of the case. Specifically, the line width of the pattern does not deviate from the design value, and the in-plane deviation of the difference between the design value and the actual line width (in the case of not 0) is generated. In other words, the tendency to be in-plane to the positive side or the negative side is different from the design value. The pattern of the TFT substrate has a symmetrical pattern (for example, the light transmitting portion, the light shielding portion, the semi-light transmitting portion, the light shielding portion, and the light transmitting portion are arranged in one direction in this order) with respect to the semi-transmissive portion. The case where the line widths of the light-shielding portions on both sides are the same, etc.) makes it possible to eliminate the problem that the symmetry cannot be maintained due to the positional shift caused by the two-time greening in the previous method. Further, it is possible to suppress the variation in the line width variation in the plane caused by the cause of the pattern deviation and the cause of the aperture ratio. (4) In the method of the first embodiment, for example, etching is performed by using the resist development I56466.doc • 27-201215998 and the first resist pattern as the mask light shielding film and the semi-transmissive film, respectively. The resist pattern is reduced, and the second resist pattern is ashed by ozone water, the second resist pattern is etched as a mask light-shielding film, and the second resist pattern removed by the stripping liquid is removed. All steps can be performed using a wet process using liquids. Therefore, the processes can be continuously performed in one apparatus, so that it is not necessary to move the mask intermediate in the middle of the process between the apparatuses, thereby reducing the risk of defects due to adhesion of particles or the like. Further, by performing such processing continuously, the useless standby time or moving time generated between steps can be reduced, and the total processing time can be greatly shortened. <Second Embodiment of the Invention> Next, a second embodiment of the present invention will be described. In the second embodiment, oxygen or ozone gas is used instead of ozone water, and light irradiation is performed in the presence of an ambient gas, whereby an excessive supply of ozone gas or ozone-containing active oxygen can be produced. As described above, the generation of active oxygen is promoted, and the first resist pattern 103p is reduced in film, which is different from the first embodiment described above. Hereinafter, the aspects different from the above-described first embodiment will be described in detail with reference to Fig. 1 . The manufacturing method of the multi-mode mask 1 of the second embodiment is the same as that of the first embodiment described above, and the manufacturing process of the multi-mode mask 10 of the second embodiment is performed by the manufacturing steps illustrated in Fig. 1 . In the method, the film of the third anti-surname pattern l〇3p exemplified in FIG. 1(d) is subjected to the supply of ozone gas and light irradiation. The light used for light irradiation here is in the ambient gas in the presence of oxygen (〇2) or ozone (〇3) to promote the activity of the resist film 1 〇3 minus 156466.doc -28- 201215998 For the energy light generated by oxygen, for example, ultraviolet light (wavelength 2 〇〇 nm to 380 nm) or vacuum ultraviolet light (wavelength 1 〇 nm to 2 〇〇 nm) can be used. Further, in the ambient gas in which oxygen is present, it may be in the atmosphere. Namely, by irradiating ultraviolet light (uv) or vacuum ultraviolet light (vuv), active oxygen is generated by exciting oxygen or ozone in the ambient gas by decomposition or bonding. Further, the light irradiation not only generates ozone from the oxygen of the gaseous gas, but also generates active oxygen, and has a function of cutting the bonding of the organic substance forming the resist film 103, thereby making the resist film 103 ashing efficient. Conducted. In this process, ozone is efficiently generated in the vicinity of the surface of the 1 k-th rice pattern 1 〇 3p, and the active oxygen is supplied to the first anti-gu pattern. Thereby, the shape control of the second resist pattern 104p which is reduced by the first resist pattern 10'3p can be accurately performed. The film-reducing step is also carried out in the same or substantially the same atmospheric pressure as the atmospheric pressure without using a vacuum device. Further, the uv* vuv can be irradiated by a known irradiation device such as a low pressure mercury lamp or an excimer uv lamp. Further, the wavelength at which ozone is efficiently generated by the reaction of oxygen light is different from the wavelength at which ozone is more efficiently reacted with light to generate other active oxygen. Therefore, it is possible to improve the production efficiency of ozone and other active oxygen by the light irradiation of two kinds of light sources of a low-pressure mercury lamp and an excimer uv lamp, and the manufacturing method of the multi-mode mask 1 of the second embodiment. Also, it has the same effect as the manufacturing method of the multi-tone mask 1 of the first embodiment. In other words, in the second embodiment, the reduction in the in-plane uniformity can be obtained regardless of the pattern shape (dense density, peripheral aperture ratio). As is clear from the first and second embodiments described above, according to the present invention, 156466.doc -29-201215998 can enjoy a large-scale reticle substrate while achieving a large efficiency in the steps of manufacturing a multi-tone mask. The assembly of the greening machine is a secondary advantage of reducing the time and load required to reload the same substrate without the positional offset in the same position of the greening machine. Moreover, the risk of positional shift caused by the reloading can be avoided. Further, in the second embodiment of the present invention, the film of the button pattern by the supply of ozone is used. According to this method, it is extremely advantageous to carry out a film-reduction treatment in an atmosphere or an atmosphere in which oxygen or ozone is added to the atmosphere. On the other hand, as the ashing method of the anti-touching agent, although ashing of plasma can be applied, in this case, since the large-sized mask for liquid crystal display is not only required to prepare a large-sized vacuum device, but also difficult to maintain The uniformity of the gas pressure or plasma concentration in the system is not easy to achieve the in-plane film reduction amount... Because it is insufficient to fill the active oxygen, if the excess oxygen is introduced into the vacuum device, there is a plasma generation effect. Hey. Further, for example, in the money ashing method, although the discharge of the pattern generated by the discharge of the knives on the reticle by the discharge is caused by the destruction of the pattern caused by the discharge, there is a defect of the reticle due to the generated impurities, and the like. Risk, but the method of the present invention does not produce such disadvantages. In the present invention, there is no such defect, and it is advantageous in terms of the uniformity of the film-reduction speed in the plane regardless of the shape of the pattern. <Other Embodiments of the Present Invention> Further, in the method of manufacturing a multi-tone mask, a blank mask (10) in which the semi-transmissive film 101 and the mask 1101 are laminated in this order is used in addition to the transparent substrate 100. In addition to the above methods, different methods can be used. 156466.doc 201215998 That is, a method of forming a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion by patterning a light-shielding film formed on a transparent substrate, forming a semi-transmissive film, and performing a patterning step . However, the method of the former, that is, the above-described first and second embodiments, is suitable for the application of the present invention. In other words, the former method can effectively apply the aspect of the present invention, and is particularly excellent in production efficiency. The embodiments of the present invention have been described in detail above, but the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit and scope of the invention. Further, in the above description, the three-tone multi-mode mask including the light-transmitting portion, the light-shielding portion, and the semi-transmissive portion has been described. However, the above-described plurality of semi-transmissive portions having a plurality of different transmittances are more than four types. The present invention is of course applicable to a tunable mask. [Simple description of the drawing] Figure UaHf) is the first of the present invention! A flow chart of the manufacturing steps of the multi-mode mask of the embodiment. Fig. 2 is a cross-sectional view showing a pattern transfer method using the multi-tone mask of the first embodiment of the present invention. Fig. 3 (b1) to (b3) are sectional views showing the mechanism of the step of reducing the resist pattern in the case where the active oxygen is excessively supplied. 4(b1)-(b3) are cross-sectional views showing the mechanism of the resist pattern thinning step of the reference example. Fig. 5 (a) - (c) are drawings showing the multi-mode mask of the reference example. Figure 6 is a diagram showing a method of drawing a blank mask for a blank mask according to the first embodiment of the present invention. The root table does not include the light-shielding data, the light-transmitting portion data, and the == The plan view of the synthetic data, _ indicates the plan of the light-shielding part and the light-transmitting part data of the w-system/off-out from (4), and the second-layer plant is separated from the semi-transparent part data separated by the synthetic data shown in (4). Fig. 6 is a plan view showing the distribution of the exposure amount in the case of the residual film of the blank mask of the first embodiment of the present invention. Fig.: Fig. 7 is a sectional view taken along line 1-1 of Fig. 7 (4) is a cross-sectional view showing the working white mask on which the pattern is drawn on the anti-button film, and (b) is a sectional view showing the development of the anti-rice film. Fig. 9 (a) - (e) are flowcharts showing another method of drawing blank light in the i-th embodiment of the present invention. Fig. 10 is a view showing a drawing pattern for another drawing method of a blank mask according to a third embodiment of the present invention. [Main component symbol description] 10 multi-tone mask 10b, 10b, blank mask 30 transfer body 100, 100· transparent substrate 101, 101, semi-transmissive film 101p semi-transmissive film pattern 102, 102, light shielding film 102p Light-shielding film patterns 103, 103, anti-contact film 156466.doc -32- 201215998 103p, 103p, first resist patterns 104p, 104p' second resist patterns 110, 110' light-shielding portions 110a, 110b light-shielding portion patterns 110d light-shielding portions Data 115 '115' semi-transmissive portion 115a light-shielding pattern 115b transmission pattern 115d semi-transmissive portion data 115p semi-transmissive portion pattern 120, 120, light-transmitting portion 120d light-transmitting portion data 120p light-transmitting portion pattern 300 substrate 301 processed layer 302 positive resist film 302p anti-money pattern 156466.doc - 33 -