TW201215664A - β-SiAlON fluorescent body, manufacturing method thereof, and usage thereof - Google Patents
β-SiAlON fluorescent body, manufacturing method thereof, and usage thereof Download PDFInfo
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- TW201215664A TW201215664A TW99134064A TW99134064A TW201215664A TW 201215664 A TW201215664 A TW 201215664A TW 99134064 A TW99134064 A TW 99134064A TW 99134064 A TW99134064 A TW 99134064A TW 201215664 A TW201215664 A TW 201215664A
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- sialon
- light
- phosphor
- powder
- wavelength
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910003564 SiAlON Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 14
- 150000003624 transition metals Chemical class 0.000 claims abstract description 13
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 66
- 239000000843 powder Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 23
- 230000005284 excitation Effects 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000004020 luminiscence type Methods 0.000 claims description 6
- 238000010306 acid treatment Methods 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000000790 scattering method Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 150000002484 inorganic compounds Chemical class 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 24
- 239000006104 solid solution Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000005121 nitriding Methods 0.000 description 12
- 238000011282 treatment Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- 238000010298 pulverizing process Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- 238000000227 grinding Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920000995 Spectralon Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005360 mashing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
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- 230000008023 solidification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
201215664 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種能夠利用於以使用藍色發光二極體 (藍色LH)(Light Emitting Diode))或紫外發光二極體(紫 外LED)之白色發光二極體(白色LED)等為始的各式各 樣發光裝置之螢光體,與使用它之發光裝置。 【先前技術】 於專利文獻1中揭示-種白色LED,其係藉由組合發 出藍色至紫色之短波長可就的半導體發光元件與榮光體, 使半導體發光元件之發光與由螢光體進行波長變換之光混 合’從而得到白色光。 T所周知螢光體係將石夕酸鹽、磷酸鹽、紹酸鹽、硫化 物用2體材料,將過渡金屬或稀土金翻於發光中心。 隨者白色LED之高輸出功率化,.螢光體之耐熱性、 1久性的要求越來越高。但是,使用上述f知的勞光體 s'將發生如下之醜:隨著使崎境 度降低,歧起畔時_露於私絲料 匕而發生作為白色一度降= 為母的是將共價鍵性強的氮化物或氧氮化物作 =:勞光體’其係隨溫度上升,亮度降低小, 具優越耐久性之螢光體。 二氮,,、氧氮化物作騎體材料的螢光體之代表性物, 乃牛·乳化矽固溶體之賽隆。與氮 存在0C型、β型之二種結晶系。例如 賽隆^ 作為發光中心夕-押ρ 有揭不.活化. 之一如Eu離子的α型赛隆係在紫外〜藍 4/25 201215664 色之廣泛的波長區域被激發,成為發出發光波峰波長為550〜 600nm之黃色光的螢光體(專利文獻2)。 另外也有發現於β型賽隆中,作為發光中心係藉由 添加Mn、Ce、Eu而表現螢光特性(專利文獻3 )。 β型賽隆係一種β型氮化矽之固溶體,係為A1在β 型Ιΐ化石夕結晶之Si位置,Ο在Ν位置所取代固溶者。 因為單位晶胞(單位晶格)中存在2式量之原子,通式係 以「Si6-ZA1Z0ZN8-Z」所示。於此,組成z係0〜4.2,固溶範 圍極廣。另外,(Si、Al) / (N、0)之莫耳比必須維持3/4。 一般而言,β型賽隆係藉由將氧化矽與氮化鋁,或是將 氧化鋁與氮化鋁加入氮化矽中進行加熱而可以得到。 若於β型賽隆之結晶内含有Eu2+時,被紫外至藍 色之光所激發,成為顯示520〜550nm之綠色發光的螢光體, 能夠作為白色LED等發光裝置之綠色發光成分使用。此Eu2 +活化β型賽隆即使於被Eu2+所活化的螢光體之中, 螢光光譜亦較為尖銳,特別適合用於要求於藍、綠、 紅之窄頻區域發光的液晶顯不面板背光光源之綠色 發光成分的螢光體。 也有人揭示:由高溫下燒結所合成的β型賽隆螢 光體藉由指定條件下之熱處理及酸處理等之組合的 後處理,能夠減低結晶缺陷,顯著提高螢光特性(專 利文獻4)。然而,此時隨著發光效率之提高,會引 起螢光波峰之長波長化或寬幅化。 於專利文獻5中揭示:藉由減低β型赛隆結晶内 之氧固溶量而使螢光發光窄頻區域化,作為合成氧固 溶量低的β型賽隆之方法,可列舉:氮化構成元素金 5/25 201215664 屬粉末之方法;或是於還原氮化環境中加熱氮化物、 氧化物原料之方法。然而,此情形下,β型賽隆螢光 體之發光效率極低,難以提供實用。 專利文獻1 :曰本專利第2927279號公報 專利文獻2 :曰本專利第3668770號公報 專利文獻3 :日本專利公開2005-255895號公報 專利文獻4 :國際公開第2008/062781號 專利文獻5 :國際公開第2007/066733號 【發明内容】 發明所欲解決之技術問題 習知之Eu活化β型賽隆螢光體係螢光發光效率與 光譜寬度存在著取捨妥協的關係。因而,使用Eli活 化β型赛隆螢光體之白色LED於窄頻區域化後,無法 得到充分之亮度,另一方面,提高發光效率後,顏色 再現範圍將變窄,尤其於液晶顯示器之背光源等之用 途上,難以提供實用。 本發明係有鑑於上述之課題,提供一種Eu活化β 型赛隆螢光體,其具有高螢光發光效率且螢光波峰波 長短,能夠實現窄頻區域發光。 解決問題之技術手段 本發明之螢光體係將以通式Si6-ZA1Z0ZN8-Z所示之β型 賽隆作為母體結晶,發光中心係以使Eu2+固溶者, 如專利文獻5所示,藉由降低β型賽隆結晶内之氧固 溶量,亦即降低上式之ζ值而實現窄頻區域化發光。 本發明人針對β型賽隆之ζ值、結晶構造、組成 及螢光特性而不斷鑽研後發現:從β型賽隆之晶格尺 6/25 201215664 寸,不僅能夠推測Z值,也能夠推測結晶内之Eu2 + 固溶量。其結果發現:利用習知方法所製造的β型賽 隆螢光體係於ζ值變低時,實際上固溶於β型賽隆結 晶的Eu2+量將減少,發光效率將變低。 進一步而言,係得到如下之見解而達成本發明:藉由 對β型賽隆主要原料之氮化矽粉末的結晶系或雜質進 行適當化,及以指定之條件對所合成的螢光體進行後 處理,即使於低的ζ值下,也使Eu2+固溶量增大,維 持高的發光效率而能夠實現窄頻區域化發光。 亦即,本發明係提供一種β型賽隆螢光體,其係以 通式Si6-ZA1Z0ZN8-Z所示之β型賽隆作為母體材料,發光 中心固溶有Eu2 +,β型賽隆結晶之晶格常數a為 0.7605〜0.7610nm,晶格常數 c 為 0.2906〜0.2911nm,Eu 含量為0.4〜2質量%,第一過渡金屬含量為5ppm以下。 此β型賽隆螢光體係藉由照射激發源而在波長520〜 540nm之範圍内具有發光波峰波長,於CIExy色度座標中, 其色度成為 〇.28Sxg〇.33、0.62^y<0.67。 於此P型賽隆螢光體中,依照雷射繞射散射法所測出 的粒徑分布中之積分體積分率90%直徑(D90)較佳為10 〜50μηι,且10%直徑(D10)較佳為2μηι以上。 另外,本發明係提供一種β型賽隆螢光體之製造方 法,其係以通式Si6—ζΑ1ζΟζΝ8-ζ所示之β型賽隆作為母體 材料,發光中心已固溶Eu2+的β型賽隆螢光體之製造 方法,其包含下列之步驟:於氮氣環境中、1850〜2050 °C之溫度範圍内,燒結包括含有Α1之氮化矽粉末與含有 Eu之無機化合物的原料混合粉末之燒結步驟;於稀有氣 7/25 201215664 體環境中、1300〜boo f-c·/ 驟;及0.5小時以上产、、主於則寺1〜1〇0小時之熱處理步 aa ·θ yv ^ . . /又唄於60°C以上之氫氟酸與硝酸 的混合酸内之酸處理步驟。 巧夂 於此製造方法中,在該氮 照金屬:氮化法所合成的苐-過渡:含量:二: :且含有(U〜2質量%之Ai者。另外,在該氮化石夕粉末 中較佳為使用β率5G%以上,金㈣之含量為i〇 %以下者。 ' 、再,’本發明係提供―種發*元件,其係具有發光 波長之最大強度位於24〇〜48〇nm之LED,與在該LED之發 光面所積層的上述之β型赛隆螢光體;並且也提供一種發 光裝置’錢具有此發光元件與將電供應至該發光元件的 電源。 發明之效果 根據本發明,提供一種Eu活化β型赛隆螢光體,其 具有高螢光發光效率且發光波峰波長短,能夠實現/窄 頻區域發光。 ' 【貫施方式】 Ι.β型賽隆螢光體 本發明之螢光體係發光中心之Eu2+已固溶於以通式 &6-ζΑ1ζΟζΝ8—ζ所示之β型賽隆的母體結晶十者。 β型賽隆係藉由混合碎與銘之氮化物或氧化物的 原料粉末’高溫下進行燒結所合成。然而,所得到的 β型赛隆並非完全之單相’不可避免地副生成 Si-Al-Ο-Ν玻璃相,依情形而生成如αιΝ多型體 (polytypoid)或α型賽隆之異相。因而,藉由原料擦 8/25 201215664 . t成,成粉末之組成分析而掌握正確之Z值係為 ^二以乍頻化為目的之Z值低的區域,其進料组 烕或組成分析值與實際固溶組成之解離十分顯著。 由於β型赛隆係在P型氮化石夕之su立置固溶八卜 在N位置固溶〇,隨著其固溶量之增加 夕 o i丄, 7日日、、、口曰日 之a軸(==b軸)長及e軸長將增大。 根據調查Euh固溶量與P型賽隆結晶之晶 數的關,之本發明人等檢討結果得知:Z值為一定之 凊形,右Eu2+固溶於β型賽隆結晶時,僅a軸長將增 大’c軸長幾乎不變。推定此係由於Eu2+侵入並固^ 存在方、β型賽隆結晶内之c軸方向大的 ★ 隙中。 二 因而’ β型赛隆結晶之晶格常數係成為敏感地反 、Ζ值及Eir+固溶量的參數。於本發明之螢光體申, ^型賽隆結晶之晶格常數c較佳於〇 〜MWlnm之 乾圍内。若晶格常數c較〇.2906mn小,Eu2+之固溶界 限將變低,無法得到充分之螢光強度。另一方面,若 晶格常數c超過〇.2911nm,隨著p型賽隆結晶之真正 Z值的增大,螢光光譜將寬廣化因而不佳。對於β型 ,隆結晶之Ειτ+ ϋ溶量’雖然盡可能越多越好,但 疋由於固溶限度係依存於2值,本發明之營光體中, 晶格常數a較佳成為〇.76〇5〜〇 761〇_ 現此晶格常數,螢光射的Eu含量較佳設為m 質量%。 基於螢光發光之觀點,期望螢光體高純度且極多量地含有 β型赛隆結晶相’且盡可能由P型賽隆結晶之單相所構 9/25 201215664 成,可於特性不降低之範圍,含有若+量不可避免的 非晶質相及其他結晶相之混合物。特別是z值低的本 發明之螢光體,雖然理由並不明確,對於Fe、Ni、201215664 VI. Description of the Invention: [Technical Field] The present invention relates to a method capable of utilizing a blue light emitting diode (Light Emitting Diode) or an ultraviolet light emitting diode (UV LED) A white light-emitting diode (white LED) or the like is a phosphor of various types of light-emitting devices, and a light-emitting device using the same. [Prior Art] Patent Document 1 discloses a white LED which combines a semiconductor light-emitting element and a glare which emit a short wavelength of blue to purple, and causes the light-emitting of the semiconductor light-emitting element to be emitted by the phosphor. The wavelength-converted light is mixed to obtain white light. T is known that the fluorescent system converts transition metal or rare earth gold into a luminescent center by using a body material of a metal salt, a phosphate, a salt, and a sulfide. With the high output power of the white LED, the heat resistance and long-term requirements of the phosphor are getting higher and higher. However, the use of the above-mentioned light s' will result in the following ugliness: as the degree of abundance is lowered, the smattering of the smuggling occurs when it is exposed to the shackles and occurs as a white one. Nitride or oxynitride with high valence bond =: Luminescent body's phosphor with excellent durability as temperature rises and brightness decreases. A representative of a phosphor of a dinitrogen, an oxynitride as a riding material, is a celestial emulsified cerium solid solution. There are two crystal systems of type 0C and type β with nitrogen. For example, Sailong ^ as the center of illumination, - 押 有 有 . 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化 活化A phosphor of yellow light of 550 to 600 nm (Patent Document 2). In addition, it is found in the β-type sialon, and the luminescent center is expressed by adding Mn, Ce, and Eu (Patent Document 3). The β-type Sialon is a solid solution of β-type tantalum nitride, which is the Si position of A1 crystallized in the β-type fossilized day, and the solid solution is replaced by the niobium at the niobium position. Since there are two types of atoms in the unit cell (unit lattice), the general formula is "Si6-ZA1Z0ZN8-Z". Here, the composition z is 0 to 4.2, and the solid solution range is extremely wide. In addition, the molar ratio of (Si, Al) / (N, 0) must be maintained at 3/4. In general, the β-sialon can be obtained by heating cerium oxide and aluminum nitride or by adding aluminum oxide and aluminum nitride to a tantalum nitride. When Eu2+ is contained in the crystal of the β-Sialon, it is excited by ultraviolet to blue light, and is a phosphor that emits green light of 520 to 550 nm, and can be used as a green light-emitting component of a light-emitting device such as a white LED. This Eu2+-activated β-Sialon has a sharp fluorescence spectrum even in the phosphor activated by Eu2+, and is particularly suitable for liquid crystal display panel backlights that require illumination in narrow-band regions of blue, green, and red. A phosphor of a green light-emitting component of a light source. It has also been revealed that the β-Sialon phosphor synthesized by sintering at a high temperature can reduce crystal defects and remarkably improve fluorescence characteristics by post-treatment of a combination of heat treatment and acid treatment under specified conditions (Patent Document 4). . However, at this time, as the luminous efficiency is increased, the wavelength of the fluorescent peak is increased or the width is increased. Patent Document 5 discloses that a narrow-frequency region of fluorescence emission is reduced by reducing the amount of oxygen solid solution in the β-sialon crystal, and as a method of synthesizing a β-sialon having a low oxygen solid solution amount, nitriding is exemplified. The method of forming the element gold 5/25 201215664 is a powder; or the method of heating the nitride and the oxide raw material in a reducing nitriding environment. However, in this case, the β-sialon phosphor has extremely low luminous efficiency and is difficult to provide practical use. Patent Document 1: Japanese Patent No. 2927279 Patent Document 2: Japanese Patent No. 3668770 Patent Document 3: Japanese Patent Publication No. 2005-255895 Patent Document 4: International Publication No. 2008/062781 Patent Document 5: International SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The conventionally activated Eu-activated β-Sialon fluorescent system has a trade-off relationship with the spectral width. Therefore, when the white LED using the Eli-activated β-Sialon phosphor is narrowed in the region, sufficient brightness cannot be obtained. On the other hand, after the luminous efficiency is improved, the color reproduction range is narrowed, especially for the backlight of the liquid crystal display. It is difficult to provide practical use for sources and the like. The present invention has been made in view of the above problems, and provides an Eu-activated β-Sialon phosphor having high fluorescence emission efficiency and a short peak wavelength of a fluorescent wave, thereby enabling light emission in a narrow-frequency region. Means for Solving the Problem The fluorescent system of the present invention has a β-sialon represented by the general formula Si6-ZA1Z0ZN8-Z as a parent crystal, and a light-emitting center is used to solidify Eu2+, as shown in Patent Document 5, The amount of oxygen solid solution in the β-Sialon crystal is reduced, that is, the enthalpy of the above formula is lowered to achieve narrow-band regionalized luminescence. The present inventors have continuously studied the enthalpy value, crystal structure, composition, and fluorescence characteristics of the β-type Sialon, and found that the crystal size of the β-type Sialon 6/25 201215664 inch can not only estimate the Z value, but also speculate that it is within the crystal. Eu2 + solid solution amount. As a result, it was found that when the ζ value of the β-Sialon fluorescent system produced by the conventional method is lowered, the amount of Eu 2+ which is actually dissolved in the β-Sialon crystal is reduced, and the luminous efficiency is lowered. Further, the present invention has been achieved by optimizing the crystal system or impurities of the tantalum nitride powder of the main raw material of the β-Sialon, and subjecting the synthesized phosphor to the specified conditions. After the treatment, even at a low enthalpy value, the Eu2+ solid solution amount is increased, and high luminous efficiency is maintained, and narrow-frequency regionalized luminescence can be realized. That is, the present invention provides a β-Sialon phosphor which is a β-type sialon represented by the general formula Si6-ZA1Z0ZN8-Z as a matrix material, and has a Eu2 + solid solution in the luminescent center, and the β-Sialon crystal The lattice constant a is 0.7605 to 0.7610 nm, the lattice constant c is 0.2906 to 0.2911 nm, the Eu content is 0.4 to 2% by mass, and the first transition metal content is 5 ppm or less. The β-Sialon fluorescent system has an emission peak wavelength in a wavelength range of 520 to 540 nm by irradiating an excitation source, and its chroma is 〇.28Sxg〇.33, 0.62^y<0.67 in a CIExy chromaticity coordinate. . In the P-type Sialon phosphor, the integral volume fraction in the particle size distribution measured by the laser diffraction scattering method is 90% in diameter (D90), preferably 10 to 50 μm, and 10% in diameter (D10). ) is preferably 2 μηι or more. In addition, the present invention provides a method for producing a β-Sialon phosphor, which is a β-type sialon represented by the general formula Si6—ζΑ1ζΟζΝ8-ζ, and a β-type Sialon having a luminescent center which has solid solution of Eu2+. A method for producing a phosphor comprising the steps of: sintering a sintering powder comprising a tantalum nitride powder containing cerium 1 and an inorganic compound containing Eu in a temperature range of 1850 to 2050 ° C in a nitrogen atmosphere; In the rare gas 7/25 201215664 body environment, 1300~boo fc·/ s; and 0.5 hour or more, the main heat treatment step aa θ yv ^ . . / 呗An acid treatment step in a mixed acid of hydrofluoric acid and nitric acid at 60 ° C or higher. In this manufacturing method, the yttrium-transition synthesized by the nitrogen-based metal: nitridation method: content: two: : and contains (U 2 to 2% by mass of Ai. In addition, in the nitriding powder) Preferably, the β rate is 5 G% or more, and the gold (4) content is i〇% or less. ', again, 'The present invention provides a "germ" element having a maximum intensity of the emission wavelength of 24 〇 to 48 〇. The LED of nm and the above-mentioned β-sialon phosphor laminated on the light-emitting surface of the LED; and also provides a light-emitting device that has the light-emitting element and a power source that supplies electricity to the light-emitting element. According to the present invention, there is provided an Eu-activated β-Sialon phosphor having high fluorescence emission efficiency and a short emission wavelength, which enables light emission in a narrow-band region. ' [Achievement method] β.β-sialon phosphor The Eu2+ of the luminescent center of the fluorescent system of the present invention has been dissolved in the parent crystal of the β-Sialon represented by the general formula & 6-ζΑ1ζΟζΝ8-ζ. The β-type sialon is mixed with the nitrogen of the type. The raw material powder of the compound or oxide is synthesized by sintering at a high temperature. However, the obtained β-Sialon is not completely single-phase 'inevitably, the Si-Al-Ο-Ν glass phase is indirectly generated, and depending on the case, a hetero phase such as αιΝ polytypoid or α-Sialon is generated. By means of raw material rubbing 8/25 201215664 . t into the composition analysis of the powder and grasping the correct Z value is the area where the Z value is low for the purpose of frequency modulation, and the feed group 组成 or composition analysis value The dissociation from the actual solid solution composition is very significant. Since the β-type Sailong system is solid-dissolved in the N-position in the P-type nitride rock, it is dissolved in the N-position, and the solid solution amount increases. The length of the a-axis (==b-axis) and the length of the e-axis will increase as the day of the day, the day, and the day of the mouth. According to the investigation of the amount of Euh solid solution and the number of crystals of the P-type Sialon crystal, the inventors reviewed The results show that the Z value is a certain 凊 shape, and when the right Eu2+ is dissolved in the β-Sialon crystal, only the a-axis length will increase and the 'c-axis length will be almost constant. It is presumed that this system is due to Eu2+ intrusion and solidification. In the β-Sialon crystal, the c-axis direction is large in the gap. Therefore, the lattice constant of the β-Sialon crystal becomes sensitive, reverse, and E The parameter of the ir+ solid solution amount. In the phosphor of the present invention, the lattice constant c of the ^-type Sialon crystal is preferably within the dry circumference of 〇~MWlnm. If the lattice constant c is smaller than 〇.2906mn, Eu2+ The solid solution limit will be low and sufficient fluorescence intensity will not be obtained. On the other hand, if the lattice constant c exceeds 29.2911 nm, the fluorescence spectrum will be broadened as the true Z value of the p-type Sialon crystal increases. Therefore, for the β type, the amount of Ειτ+ ϋ solubility of the crystallization of the crystallization is as good as possible, but since the solid solution limit depends on the value of 2, the lattice constant a is higher in the luminaire of the present invention.佳成〇.76〇5~〇761〇_ Now this lattice constant, the Eu content of the fluorescent shot is preferably set to m mass%. From the viewpoint of fluorescence emission, it is desirable that the phosphor contains a β-sialon crystal phase with high purity and a large amount, and is composed of a single phase of P-type Sialon crystals as much as possible 9/25 201215664, and the characteristics are not lowered. The range includes a mixture of an amorphous phase inevitably and an amount of other crystalline phases. In particular, the phosphor of the present invention having a low z value, although the reason is not clear, for Fe, Ni,
Co等之第一過渡金屬雜質非常的敏感,較佳為將此 等之含量設為5ppm以下。 本發明之螢光體係藉由照射激發源而發出在波 長520〜540nm之範圍具有波峰波長之綠色光。活化Eu2+之 β型賽隆螢光體的螢光光譜係具有如下之特徵:即使 提高ζ值,光譜上升邊緣之波長幾乎不變,長波長側 之螢光成分將增大。亦即,提高Ζ值時,波峰波長將 慢慢地向長波長側位移,同時光譜之半值寬度也將增 大。其結果,CIE色度座標上之χ值將增大,y值將 減少。除了 ζ值以夕卜,對於營光光譜形狀造成影響之 因子,可列舉:β型賽隆之結晶性,即使ζ值低,β 型赛隆之結晶性為低之情形下,光譜之半值寬度將增 大。β型賽隆結晶之ζ值低,結晶性高的本發明之螢 光體中,半值寬度狹窄,CIE色度座標上之(χ、幻 值採取0·28Α<0.33、〇·62分切.67之值。 針對本發明之螢光體的形態,作為粉末使用之情形 下,藉由雷射繞射散射法所測出的粒徑分布中之體積 基準的累積分率中之90%主徑(D90)較佳為1〇〜5〇μιη。 本發明之螢光體係藉由將_調整至5()μιη以下,因為對於 =LED之樹脂的均句混合將變得容易,同時也能夠減少 之色度偏異或照射面之顏色不均的原因而較佳。 再,’本發明之營光體係娜直徑(測)較佳為一 上。較數叫S小的粒子之結晶性低,不僅瑩光體本身 10/25 201215664 之發光強度低,也接近可見光之波長。藉由使D10成為2μΓη 以上,能夠使用如此小粒子含量少的螢光體來裝配LED,抑 制光在含有螢光體之層内發生強烈散射,能夠提高LED 之發光效率(光取出效率)。 2. β型賽隆螢光體之製造方法 接著,針對得到本發明螢光體之製造方法而加以說明。 於本發明之β型賽隆螢光體之製造方法中,較佳使用 含有Α1的氮化矽粉末,所述AL與依照金屬矽氮化法所 合成的β型賽隆結晶ζ值相對應。本發明之氮化矽粉末 較佳為盡量減少Si、Α卜Ν以外之雜質元素,尤其使 第一過渡金屬含量成為lOppm以下。 於低ζ組成之β型賽隆中,由於過剩之氧將促進異 相之生成,因此必須減低氮化矽原料之氧雜質量。基 於如此之觀點,藉由高純度且氧雜質量少的矽粉末直 接氮化所得到的氮化矽原料粉末較佳。 利用直接氮化法所得到的氮化矽粉末係利用習 知方法所合成。例如,能夠於含氮之氣體環境中,將 矽粉末在1200°C以上之溫度下加熱,使其氮化後,經 歷進行所得到的氮化物之碎解、粉碎、分級或酸處理 等之粉體化步驟而製作氮化矽粉末。由於利用習知之 直接氮化法所得到的氮化矽粉末大多用於燒結,故係 平均粒徑為次微米〜數微米之微粉末,但於本發明之 螢光體用途中,也不一定非要微粉末,平均粒徑可以 約為5〜1⑻μηι,重要的是儘量抑制由於過度粉碎等造 成粉體化步驟中有雜質混入。 再者,由於本發明螢光體中之β型賽隆係Α1固溶量為 11/25 5 201215664 >、白’因此藉由切粉末之氣化階段預先含有指定量 =A卜在最後的燒結步驟,少量的〜將均勻固溶, :即成為組成均勻的固溶體。A1之添加方法 末或氣化㈣末及氧化铭粉末等添加K = 末中之方法;或是使用輪之合金 ’ 接虱化之原料的方法等。關於螢光體;The first transition metal impurity such as Co is very sensitive, and it is preferred to set the content to 5 ppm or less. The fluorescent system of the present invention emits green light having a peak wavelength in a wavelength range of 520 to 540 nm by irradiating an excitation source. The fluorescence spectrum of the β-Sialon phosphor that activates Eu2+ has a feature that even if the enthalpy is increased, the wavelength of the rising edge of the spectrum hardly changes, and the fluorescent component on the long wavelength side increases. That is, when the enthalpy is increased, the peak wavelength will slowly shift toward the long wavelength side, and the half value width of the spectrum will also increase. As a result, the χ value on the CIE chromaticity coordinates will increase and the y value will decrease. In addition to the devaluation factor, the factor affecting the shape of the camping spectrum can be exemplified by the crystallinity of the β-Sialon. Even if the enthalpy is low, the crystallinity of the β-Sialon is low, and the half-value width of the spectrum will be Increase. The β-type Sialon crystal has a low enthalpy value and a high crystallinity, and the half value width is narrow in the phosphor of the present invention, and the CIE chromaticity coordinates are used (χ, phantom value is 0·28Α<0.33, 〇·62 slitting) Value of .67. For the form of the phosphor of the present invention, in the case of use as a powder, 90% of the cumulative fraction of the volume basis in the particle size distribution measured by the laser diffraction scattering method The diameter (D90) is preferably from 1 〇 to 5 〇 μιη. The fluorescent system of the present invention is adjusted to 5 () μηη or less, because it is easy to mix the resin of the resin of =LED, and at the same time It is preferable to reduce the chromaticity deviation or the color unevenness of the illuminating surface. Further, 'the diameter of the luminaire of the present invention is preferably one. The crystallinity of the particles smaller than S is low. Not only the luminous intensity of the fluorescent body itself 10/25 201215664 is low, but also close to the wavelength of visible light. By making D10 2μΓη or more, it is possible to use such a small amount of phosphor with a small particle content to assemble the LED, and to suppress the light from containing fluorescence. Strong scattering occurs in the layer of the body, which can improve the luminous efficiency of the LED (light extraction effect) 2. Method for Producing β-Sialon Phosphor Next, a method for producing a phosphor of the present invention will be described. In the method for producing a β-Sialon phosphor of the present invention, it is preferably used. The tantalum nitride powder of Α1 corresponds to the ζ value of the β-sialon crystal synthesized by the metal ruthenium nitridation method. The tantalum nitride powder of the present invention preferably minimizes impurities other than Si and yttrium. The element, in particular, makes the content of the first transition metal to be less than 10 ppm. In the β-sialon of low-ruthenium composition, since excess oxygen promotes the formation of a heterogeneous phase, it is necessary to reduce the oxygen content of the tantalum nitride raw material. The tantalum nitride raw material powder obtained by directly nitriding the tantalum powder having high purity and low oxygen content is preferably synthesized. The tantalum nitride powder obtained by the direct nitridation method is synthesized by a conventional method. For example, In a nitrogen-containing gas atmosphere, the niobium powder is heated at a temperature of 1200 ° C or higher to be nitrided, and then subjected to a powdering step of dissolving, pulverizing, classifying, or acid-treating the obtained nitride. Producing nitrogen a cerium oxide powder. Since the cerium nitride powder obtained by the conventional direct nitriding method is mostly used for sintering, it is a fine powder having an average particle diameter of from submicron to several micrometers, but in the use of the phosphor of the present invention, It is not necessary to use a fine powder, and the average particle diameter may be about 5 to 1 (8) μηι, and it is important to suppress the incorporation of impurities in the powdering step due to excessive pulverization or the like as much as possible. Further, since the β-type in the phosphor of the present invention The solid solution amount of the sialon system is 11/25 5 201215664 >, white' Therefore, by the gasification stage of the cut powder, the specified amount is included in advance = A Bu in the final sintering step, a small amount of ~ will be uniformly dissolved, namely: It is a solid solution with a uniform composition. The method of adding A1 or the method of adding K= at the end of gasification (4) and Oxidation powder, or the method of using the alloy of the wheel to form the raw material of the alloy. About the phosphor;
:散也可以作成未固溶於氮化:之 =有關本發明之氮切粉末巾之A 物型賽隆晶格常數成為前述範圍 佳成為心〜2質量% ’更佳成為。5〜2質量%圍内 的中,若未反應的梦為1〇質量%以下 使於合成營光口 ΓΓ過1()質量%時,即 石夕係吸收紫外〜可見'之 ^ f 石夕亦會殘存。由於 中之時,將使亮度大幅降:廣波長區域的光,若存在於榮光體 高二氮化石夕粉末係藉由提 率(β率=β量/(α# + β、 °^P之令的β相含量之比 能夠使Eu2+右 里))’從而於β型賽隆合成時, 佳為50%以上。☆於Ρ型赛隆結晶内’因此β率較 下所=提高β率而能夠促進❿固溶之理由係如 Ευ對β型赛隆ό士曰 驟之高溫下,伴内之固溶係於螢光體合成步 成長而進行,复主相而進行的β型赛隆之粒 要成份為微量存在於原料中之氧化 12/25 201215664 巧王文现刀-<个日曰;j p切裳 相柞L±卜 賽隆之粒成長而進行。與β 相作一比較,氮化矽之α相科 ,.. (丁'對此液相之溶解速度顯著較 大,粒成長速度較快。Eu2+難& a ^ ^ 雞以固〉谷於β型赛隆結晶内, 右粒成長速度過快,將無法充 n 4, is -a- 〇 口〉谷。因此 口心為精 =咖之比率、降低粒成長速度,能夠促進Eu2 + t固溶。 =明之β型賽隆螢光體係藉由於I氣環境中加 «=:氮切粉末與含以之化合物所構成的 185二 合成。針對加熱溫度,較佳為 =〇=g5QC之範圍。若加熱溫度為咖t以上,能夠使μ 蝴進入 =賽隆結晶中,可以得到具有充分亮度之營光 =另/卜 >加熱溫度為2Q5代以下,並無施加非常 =氮氣壓力而抑制β型賽隆分解之必要,因此 為热特殊裝置的必要而在工業上較彳土。 製造β型賽隆營光體之際,其V成物成為 碎解、粉碎及/或分級操作而使該合成物成為 :疋尺寸之粉末。為了適合於作為LED用螢光體使 用,如上所述,必須成為指定之D10、D90。 具體之處理例,可列舉:進行合成物之筛孔20 〜45μιη之筛分級處理而得到通過篩之粉末的方法·或3 球磨機或振動磨機、喷射磨機等之-般粉碎機而粉碎 粒度的方法。於後者之方法巾,過度之料不僅會生^容易 使光散射之微粒,也會在粒子表面產峰姓a a 谷 玍土 ',、口日日缺陷而引起 發光效率之降低。根據本發明人等之探討,不進行粉碎處 理,藉由僅採用筛分級所進行的處理及採用噴射刀研磨 粉碎機所進行的碎解處理而㈣的粉末最 13/25 201215664 • , 尚的發光效率。 處理而使營光特H高^述之方法所得到的螢光體,進行下列 酸之混合酸進行加熱處理:營氨氣物 一步使螢麵巾之減為了進 行,椐摅士 π 4刀成為更不安定所進 造元素的氮:由广盡量不含螢光體之構 成不安定化相,籍由去除該相而使榮 :性顯者提高。熱處理溫度較隹為譲= ^AlWr 上低、、'口日日性部可實現不安定化; ⑶下’錢抑娜型賽隆之分解。不安定化 t除,夠採用藉由酸或驗所進行的溶解去除等之習知技術。盆 中,精由氫氟酸與硝酸之混合物,於6叱以上,祕二 以上’較佳為0.5小時以上而進行的溶解處理係為有效 較佳。 3.發光元件及發光裝置 螢先體所構成的發光裝置,尤其藉由將含有24〇〜 480nm波長之紫外光或可見光作為激發源而進行照射,將進 行綠色之窄頻化發光,藉由積層於紫外LED或藍色LED之發 光面,必要時組合紅色螢光體及/或藍色螢光體而作成發光元 件’容易得到白色光。 另外,因為β型賽隆螢光體高溫下之亮度降低少, 故使用它之發光裝置的亮度降低及色度偏差小,即使 14/25 201215664 曝露於高温中也不會劣化’再者,因為具優越之而寸熱 性,於氧化氣體環境及水蒸氣環境下也具優越之長期 安定性,故有高亮度且長壽命的特徵。 螢光裝置係使用以至少一種發光光源與本發明 之(3型賽隆作為主要成分之螢光體所構成。例如7能 夠利用日本專利特開平5-152609號公報、特開平 7-99345號公報、專利第2927279號等所揭示的習知 方法而製造LED。於此情形下,發光光源較佳為發出 240〜480nm波長光之紫外LED或藍色LED,特別理想為發 出440〜470nm波長光之藍色LED,作為此等之發光元件可 列舉:由GaN或InGaN等之氮化物半導體所構成者,藉由調 組成而可以成為發出指定波長光的發光光源。 於發光裝置中,除了單獨使用本發明之螢光體以 外’也能夠藉由與具有其他發光特性之螢光體併用, 構成發出所期望之顏色的發光裝置。尤其,本發明之 綠色窄頻發光的螢光體係以藍色LED作為激發源, 藉由與發光波長之波峰為600〜7〇〇nm之紅色營光體,例 如CaAlSiN’Eu等相組合而適合於具優越之顏色再現性 的影像顯示裝置之背光用白色LED。 實施例 接著 邊使用表、圖,一邊與比較例作一比較,詳 細說明實施例。第1圖係顯示有關實施例1〜3及比較例2 之β型賽隆螢光體之藉由波長455nm外部激發光所得 到的螢光光譜之圖面。 〔實施例1〕 〈含有A1之luu场末之減及評估〉 15/25 201215664 ^用V型混合機(时理化學器械公司製「s_3」)以 混&向純度化學公司製矽粉末(純度99.999%以上、 _75、μΓη) 98.81質量%與Tokuy_公司製氮化紹粉末(E等 =1.二質量% ’進一步全部通過筛孔25〇叫之筛而去除 旋聚,诗到原料混合粉末。 將原料混合粉末填充於直徑6〇mm、高度3〇麵之附蓋子 的圓筒型氮化_容器(電氣化學m製、「則」等級) 内’利用後加熱器之電爐’於a5MPa之加壓氮氣環境中,於 c ’進行8小時之加熱處理。加熱處理之際的升溫速度係 口又疋為·至,皿〜Uooc為20°C/分鐘,1200〜1500°C為0.5T:/ 分鐘。 ,所得到的生成物係塊狀,藉由高速搗碎磨機(日陶科學公 司製^ANS-143PL、磨臼及錘係氧化紹製)而粉碎該生成物。 利用篩孔45μιη之篩以分級所粉碎的粉末,將以下之粉 末作成螢光體合成用之氮化矽粉末。還有,篩孔45μιη之篩通 過率約為40%。 所得到的氮化矽粉末係使用χ線繞射裝置(Rigaku股份 有限公司製、ULTIMA IV ),進行粉末X線繞射測定(xrd )。 所存在的結晶相係β型氮化石夕、α型氮化石夕及金屬石夕之三 相。藉由Rigaku股份有限公司製之解析程式jADE對所得 到的粉末X線繞射圖案進行Rietvdd解析的結果,(3率(表 示氮化石夕結晶中之β相的比例)為90.2質量%、金屬 石夕為0.8質量%。 接著’有關Α1含量係依照鹼熔解法;有關雜質 含量係依照加壓氧分解法而使粉末溶解後,藉由ICP 發光分光分析裝置(Rigaku股份有限公司製、CIR〇S_120 ) 16/25 201215664 而進行分析。此粉末之A】含量為〇 46質量%,— 過渡金屬含量為2ppm。 <0型賽隆螢光體之合成及評估〉 藉由氧化紹研砵而乾式混合前述含有A1之氮化石夕粉東 98.03二里%與信越化學工業公司製氧化銪粉末(Ru級) 】.97質夏%’進一步全部通過篩孔乃叫爪之篩,得到p型 隆螢光體用原料混合粉末。將此原料混合粉末填充於 直徑她脑、高度30mm之附蓋子的圓筒型氮化蝴製容器(電 氣化學工業股份有限公司製、「⑹」等級)内,利用碳加敎哭The dispersion can also be made into a non-solid solution of nitriding: = The A-type Sialon lattice constant of the nitrogen-cut powder towel of the present invention is preferably in the range of 2 to 2% by mass. In the range of 5 to 2% by mass, if the unreacted dream is 1% by mass or less, when the synthetic camp is smashed by 1 ()% by mass, that is, the Shi Xi system absorbs UV ~ visible '^ f Shi Xi It will also survive. In the middle, the brightness will be greatly reduced: the light in the wide wavelength region, if present in the glory body, the high-diazetanium powder, by the extraction rate (β rate = β amount / (α# + β, ° ^ P The ratio of the β phase content can make Eu2+ to the right))) so that it is preferably 50% or more when the β-sialon is synthesized. ☆In the Ρ 赛 结晶 结晶 ' 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The light body synthesis step is carried out, and the composition of the β-type Sialon which is carried out by the complex main phase is a trace amount of oxidation present in the raw material. 12/25 201215664 Qiao Wangwen is now knife-<single; jp cut skirt L±Boselon's grain grows. Compared with β phase, the α phase of tantalum nitride, .. (Ding 'the dissolution rate of this liquid phase is significantly larger, the grain growth rate is faster. Eu2+ is difficult & a ^ ^ chicken to solid> valley In the β-Sialon crystal, the right grain grows too fast, and it will not be able to charge n 4, is -a- 〇口〉谷. Therefore, the mouth is the ratio of fine = coffee, reducing the growth rate of the grain, and promoting Eu2 + t solid Dissolved. = The β-Sialon fluorescent system of Ming is formed by the addition of «=: nitrogen-cut powder and the compound containing 185 in the I gas atmosphere. For the heating temperature, it is preferably in the range of = 〇 = g5QC. If the heating temperature is more than or equal to t, it is possible to make μ butterfly enter the =Sialon crystal, and it is possible to obtain a camping light with sufficient brightness = another/b> heating temperature is 2Q5 generation or less, and no significant nitrogen pressure is applied to suppress β. The type of Sialon is necessary for decomposition, so it is industrially more abbreviated for the necessity of a hot special device. When the β-Sylon camp light body is manufactured, its V-form becomes a disintegration, pulverization and/or classification operation. The composition becomes a powder of 疋 size. In order to be suitable for use as a phosphor for LED, as described above, it is necessary Specific examples of the treatments include a method of performing a sieve classification process of 20 to 45 μm of a sieve of a composition to obtain a powder which passes through a sieve, or a ball mill, a vibration mill, a jet mill, or the like. - The method of pulverizing the particle size by the pulverizer. In the latter method, the excessive material not only produces the particles which are easy to scatter light, but also produces the peak name aa glutinous soil on the surface of the particle, and the daily defects are According to the investigation by the inventors of the present invention, the pulverization treatment is not carried out, and the treatment by only the sieve classification and the disintegration treatment by the jet pulverizer are used, and the powder of the (four) is the most 13/25. 201215664 • , the luminous efficiency of the luminescence. The phosphor obtained by the method of the method of the luminescence of the luminaire is treated with the following acid mixed acid: the ammonia smear is reduced in one step. The gentleman π 4 knives become the nitrogen of the elements that are more unstable. The ambiguous phase is formed by the broad absence of the phosphor. The reason for removing the phase is to increase the scent.隹为譲= ^ AlWr is low, and the 'day and day part can be unstable. (3) The decomposition of the 'Qin Sina type Sialon. The unsettled t is enough to use the dissolution and removal by acid or test. In the pot, in the pot, the mixture of hydrofluoric acid and nitric acid is more than 6 ,, and the dissolution treatment of the second or more 'preferably 0.5 hours or more is effective. 3. Light-emitting element and illuminating device A light-emitting device composed of a body, in particular, irradiated with ultraviolet light or visible light having a wavelength of 24 〇 to 480 nm as an excitation source, and performs green-narrowed light-emitting illuminating by illuminating an ultraviolet LED or a blue LED In the case of a surface, if necessary, a red phosphor and/or a blue phosphor are combined to form a light-emitting element, and white light is easily obtained. In addition, since the brightness reduction of the β-Sialon phosphor at a high temperature is small, the luminance of the light-emitting device using the same is small and the chromaticity deviation is small, and even if 14/25 201215664 is exposed to high temperature, it will not deteriorate. It has superior thermal properties and excellent long-term stability in an oxidizing gas environment and a water vapor environment. Therefore, it has high brightness and long life. In the fluorescent device, at least one of the illuminating light source and the phosphor of the present invention (the type 3 sialon is used as a main component), for example, the Japanese Patent Application Laid-Open No. Hei 5-152609, No. Hei 7-99345 An LED is manufactured by the conventional method disclosed in Japanese Patent No. 2927279. In this case, the illuminating light source is preferably an ultraviolet LED or a blue LED emitting light of a wavelength of 240 to 480 nm, and particularly preferably emitting light of a wavelength of 440 to 470 nm. As the light-emitting element of the blue LED, a nitride semiconductor such as GaN or InGaN can be used as a light-emitting source that emits light of a predetermined wavelength by adjusting the composition. In addition to the phosphor of the invention, it can also be used in combination with a phosphor having other light-emitting characteristics to form a light-emitting device that emits a desired color. In particular, the green narrow-band illumination system of the present invention uses a blue LED as a blue LED. The excitation source is suitable for images with superior color reproducibility by combining a red camping body with a peak wavelength of 600~7 〇〇 nm, such as CaAlSiN'Eu. A white LED for backlighting of a display device is used. The embodiment will be described in detail with reference to a comparative example, using a table and a diagram. The first embodiment shows the β-type Sialon in the first to third embodiments and the second comparative example. The phosphor spectrum of the phosphor obtained by external excitation light at a wavelength of 455 nm. [Example 1] <Reduction and evaluation of luu field containing A1> 15/25 201215664 ^V-type mixer "S_3" manufactured by the Chemical and Chemical Equipment Co., Ltd.) is a mixed powder of purity powder (purity of 99.999% or more, _75, μΓη) 98.81% by mass and a toluene powder manufactured by Tokuy Co., Ltd. (E et al. % ' Further all through the sieve 25 squeaking screen to remove the spin-poly, poetry to the raw material mixed powder. The raw material mixed powder is filled in a cylindrical nitriding container with a cover of 6 mm in diameter and 3 高度 in height ( Electrochemical m system, "then" grade) The 'electric furnace using the after-heater' is heated in c' for 8 hours in a pressurized nitrogen atmosphere of a5 MPa. The heating rate at the time of heat treatment is changed to · To, dish ~ Uooc is 20 ° C / min, 1200 ~ 1500 ° C is 0.5 T: / min. The resulting product is in the form of a block, which is pulverized by a high-speed mashing mill (manufactured by Nippon Scientific Co., Ltd., ANS-143PL, honing and hammering). The pulverized powder was classified by a sieve having a mesh size of 45 μm, and the following powder was used as a tantalum nitride powder for phosphor synthesis. Further, the sieve throughput of the sieve of 45 μm was about 40%. The bismuth powder was subjected to powder X-ray diffraction measurement (xrd) using a rifling diffraction device (ULTIMA IV, manufactured by Rigaku Co., Ltd.). The crystal phase present is a phase of β-type nitride, an α-type nitride, and a metal-phase. The result of Rietvdd analysis of the obtained powder X-ray diffraction pattern by the analytical program jADE manufactured by Rigaku Co., Ltd., (3 ratio (representing the ratio of the β phase in the nitride crystal) is 90.2% by mass, metal stone In the evening, it is 0.8% by mass. Next, the content of Α1 is in accordance with the alkali melting method; the content of impurities is dissolved in the powder according to the pressurized oxygen decomposition method, and then the ICP emission spectroscopic analyzer (Rigaku Co., Ltd., CIR〇S_120) 16/25 201215664 and analyzed. The content of A] of this powder is 〇46% by mass, and the content of transition metal is 2ppm. <Synthesis and Evaluation of Type 0 Sialon Phosphors> Dry by Oxidation Mixing the above-mentioned A1-containing nitriding powder, East 98.03 milifan and Shin-Etsu Chemical Co., Ltd. yttrium oxide powder (Ru grade) 】.97 quality summer%' further all through the sieve hole is called the claw sieve, and the p-type blasting is obtained. The raw material mixed powder is filled in a cylindrical nitriding butterfly container with a lid of 30 mm in height and having a height of 30 mm (manufactured by Electric Chemical Industry Co., Ltd., "(6)" grade) Inside, use carbon to cry
之電爐,於〇.8MPa之加魏氣環境中,於200(TC,進行M 時之加熱處理。所得_生成物鱗⑽慢凝聚的塊狀物 夠利用穿戴潔淨的橡勝手套之手輕易分解。採用如此方式 行輕度之碎解後,通過篩孔45μηι之|$。此狀態下之筛孔 45μηι的篩通過率約為9〇%。 將上述粉末填充於直㈣咖、高度3Qmm之附笔子 的圓筒型氮化補容器(魏化學卫業股份有限公㈣』、「Ν】 等級)内,细碳加締之麵,於—场壓氬氣環境中,於」 二〇〇^進行8小時之加熱處理。所得到的粉末顏色係從處理 則的綠色變成深綠色。所得到的粉末係完全無倾燒結等之收 &,全部通過篩孔45陴之篩。於5()%氫_與戰硝酸之^, 1混合酸中,將如此方式所得到的粉末,進行抑下的加敎處 理。於處对,從深綠色變鱗_綠色。’,、 行過/慮'、水洗及乾燥而得到螢光物粉末。 〇。對於此螢光體進行迦測定之結果,結晶相 早相。β型賽隆之晶格常數係h〇.7606nm、c = 〇.2908麵。依照ICP發光分光分析法所求出的μ及 17/25 201215664The electric furnace, in the 8 MPa plus Wei gas environment, at 200 (TC, heat treatment at M. The resulting _ scales (10) slowly agglomerated blocks can be easily decomposed by the hands of clean rubber gloves After the slight disintegration in this way, the meshing rate of 45 μm is 45°. The sieve passing rate of the mesh 45 μm in this state is about 9〇%. The above powder is filled in the straight (four) coffee, and the height is 3Qmm. In the cylindrical nitriding filling container of the pen (Wei Chemical Weiye Co., Ltd. (4), "Ν" grade), the fine carbon is added to the surface, in the field-pressure argon atmosphere, in the "two 〇〇 ^ The heat treatment was carried out for 8 hours, and the color of the obtained powder was changed from green to dark green in the treatment. The obtained powder was completely free from the pouring and the like, and all passed through a sieve of 45 mesh. % hydrogen _ with the nitric acid, 1 mixed acid, the powder obtained in this way, the suppression of the twisting treatment. At the right, from dark green to scale _ green. ',, travel / care ' , washing with water and drying to obtain a phosphor powder. 〇. For the result of the measurement of the phosphor, the knot Crystal phase Early phase. The lattice constant of β-Sialon is h〇.7606nm, c = 〇.2908 surface. μ and 17/25 according to ICP emission spectrometry. 201215664
Eu含量分別為0.49、0.77質量%,第一過渡金屬含 量係低於5ppm。 接著,使用粒度分布測定裝置(Beckman Coulter 股份公司製、LS-230型),依照雷射繞射/散射法進行 粒徑分布測定,結果為,體積基準之累積分率中之10 % 直徑(D10)係 6·7μηι、90% 直徑(D90)係 38.4μιη。 此粒徑分布測定用試料之調整係依照原則JIS R 1629-1997解說附表1之氮化矽測定條件進行。 螢光體之發光特性係進行如下之評估。使凹型元 件之表面成為平滑的方式來填充螢光體粉末,裝設積 分球。使用光纖而將從發光光源(Xe燈)已分光成 既定波長之單色光導入此積分球中。以此單色光作為 激發源而照射於螢光體試料,使用分光光度計(大塚 電子公司製、MCPD-7000)而進行試料之螢光及反射 光之光譜測定。於本實施例中,單色光係使用波長 405nm之近紫外光與波長455nm之藍色光。 於所得到的螢光光譜中,相對於激發波長4〇5nm 及455nm’分別從415〜780nm及465〜780nm範圍之波 長區域的資料,利用依照JIS Z 8724之方法,算出在JIS Z 8701 所規定的XYZ表色系中之色度座標ciEx與CIEy。激發波長 405nm之情形的色度ciEx、CIEy分別為0.312、0.655 ;激發 波長455nm之情形的色度CIEx、CIEy分別為〇 318、〇 65卜 發光效率係進行如下方式所求出。首先,將反射率 之標準反射板(Labsphere公司製、SPECTRALON)設置於試 料部,測定激發光之光譜,激發波長4〇5nm之情形係從棚 415nm之波長範圍,激發波長455nm之情形係從450〜 18/25 201215664 465腦之波長範圍的光譜而算出激發光光子數 將榮光體設置於簡州,辦制的光譜频 ^ 射光光子數(⑽)及螢光光子數(Qem)。還有,激發= 光光子數雜激發缺该_的波錄,螢光光子 在下列範圍f算出:激發波長為4〇5nm之情形係於 二之波長範圍;激發光為455nm之情形係於他〜 800nm之範圍。從所得到的三種_ (=Qem/Qexx100)i_(=(Qex—Qref)xi〇〇)^ 部好效率卜Qem/ (Qex —_ χ _。彻波長4〇5· 的近’、外光峨發之情形的吸收率、内部量子效率、外部量子 效率分別為83.2%、59.2%、49 3% ;顧波長极麵之藍色 光所激發之情形則分別為73.1%、56.6%、41.3%。 〔比較例1〕 使Si : AM Eu比與實施例i之螢光體成為相同的方式 來換混宇部興產公司製α型氮化石夕粉末(SN-E10級)、 Tokuyama公司製氮化叙粉末(F級)與信越化學工業公司 製銷粉末(仙級),藉由相同於實施例1之方法而合成β型賽 隆。所得到的生成物係綠色硬的凝聚塊,在其表面生 成有紅褐色之析出物。此生成物係如同實施例1之情 形’難以藉由輕度碎解完成粉體化。於是,藉由氧化銘研 缽進行粉碎,直到全部通過篩孔15〇μΐΏ之篩為止,進一 步利用篩孔45μπι之篩來進行其之分級。依照相同於實施例 1之方法而進行通過筛的粉末之加熱處理及酸處理,得到ρ型 賽隆螢光體。 對於此螢光體進行XRD測定之結果,結晶相為ρ 型賽隆單相。 19/25 201215664 a = 0.7604nm、c = β型賽隆之晶格常數係 0.2909nm。 、 ‘、、 發无y刀光分析法所求出的A1及Ευ含量 刀〇.46、〇.22質量%,第—過渡金屬含量係低於 PP二:貫施例1作一比較,尤其EU含率也都降低。 進的心,勞光體進行粒徑分布測定之結果,體積基 :二’刀率中之1 〇%直徑(D10 )係' 4、m ; 90%直 徑(D90)係 43 3μηι。 ^ 踢J用:鸯ί體的波長4〇5Μ之近紫外光所激發之細( 4CK “部置子效率、外部量子效率、QEX及CIEy分別為 M pi * 9 5%、39 2%、〇·304、〇.655 ;利用波長 455nm 之藍 色先所激發之情形則分別為45.1%、68.4%、3_、〇314、 麵。與實施例!作-比較’固溶於㈣賽隆之以量 少,吸收率低,因此外部量子效率變低。 〔實施例2〜4、比較例2〜4〕 除了使矽粉末與氮化鋁粉末之混合比及原料矽粉末之 ’、、屯度進而氮化石夕合成溫度成為顯示於「表丨」的方式以外, 依知、相同於貫施例丨之方法,進行氮化末之合成、p 型赛隆之燒結及後處理(加熱處理及酸處理),得到β 型賽隆螢光體。還有’於實施例3及比較例2中,也 添加氧化鋁粉末,調整β型赛隆結晶之氧量。 於「表1」中,顯示由氮化石夕粉末之XRD所算出的 β率、金屬矽量及由ICP所求出的A1含量及第一過渡金 屬έ i。於「表2」中,顯示所得到的β型賽隆螢光 體之晶格常數、組成、雜質含量及粒度分布;於「表 3」中’顯示發光特性。 20/25 201215664 〔表1〕The Eu content was 0.49 and 0.77% by mass, respectively, and the first transition metal content was less than 5 ppm. Then, using a particle size distribution measuring apparatus (manufactured by Beckman Coulter Co., Ltd., LS-230 type), the particle size distribution was measured by a laser diffraction/scattering method, and as a result, 10% of the cumulative fraction of the volume basis (D10) ) is 6·7 μηι, 90% diameter (D90) is 38.4 μιη. The adjustment of the sample for measuring the particle size distribution was carried out in accordance with the conditions of the cerium nitride measurement of the attached Table 1 in accordance with the principle JIS R 1629-1997. The luminescent properties of the phosphors were evaluated as follows. The phosphor powder is filled in such a manner that the surface of the concave member is smooth, and an integrating sphere is mounted. Monochrome light that has been split into a predetermined wavelength from an illuminating light source (Xe lamp) is introduced into the integrating sphere using an optical fiber. The monochromatic light was used as an excitation source to illuminate the phosphor sample, and a spectrophotometer (manufactured by Otsuka Electronics Co., Ltd., MCPD-7000) was used to measure the fluorescence of the sample and the reflected light. In the present embodiment, the monochromatic light system uses near-ultraviolet light having a wavelength of 405 nm and blue light having a wavelength of 455 nm. In the obtained fluorescence spectrum, the data of the wavelength range of 415 to 780 nm and 465 to 780 nm from the excitation wavelengths of 4〇5 nm and 455 nm', respectively, are calculated in accordance with JIS Z 8724, as defined in JIS Z 8701. The chromaticity coordinates ciEx and CIEy in the XYZ color system. The chromaticities ciEx and CIEy of the excitation wavelength of 405 nm were 0.312 and 0.655, respectively, and the chromaticities CIEx and CIEy of the excitation wavelength of 455 nm were 〇318 and 〇65, respectively, and the luminous efficiency was obtained as follows. First, a standard reflection plate (SPECTRALON manufactured by Labsphere Co., Ltd.) having a reflectance was placed in a sample portion, and the spectrum of the excitation light was measured. The excitation wavelength was 4 〇 5 nm, and the wavelength range from the 415 nm to the excitation wavelength was 455 nm. ~ 18/25 201215664 465 The spectrum of the wavelength range of the brain is calculated by the number of excitation photons. The glory is set in Jane, and the number of spectral sources ((10)) and the number of fluorescent photons (Qem) are set. In addition, the excitation = photon photon excitation lacks the _ wave record, and the fluorescence photon is calculated in the following range f: the excitation wavelength is 4 〇 5 nm in the wavelength range of 2; the excitation light is 455 nm. ~ 800nm range. From the three kinds of _ (=Qem/Qexx100)i_(=(Qex-Qref)xi〇〇)^, the efficiency is Qem/(Qex__ χ _. Near wavelength of 4〇5·, external light In the case of bursting, the absorption rate, internal quantum efficiency, and external quantum efficiency were 83.2%, 59.2%, and 49 3%, respectively, and the blue light excited by the wavelength pole surface was 73.1%, 56.6%, and 41.3%, respectively. [Comparative Example 1] The Si: AM Eu ratio was changed in the same manner as the phosphor of Example i, and the α-type nitride powder (SN-E10 grade) manufactured by Ube Industries, Ltd., and the nitrided product manufactured by Tokuyama Co., Ltd. were replaced. Powder (Grade F) and Shin-Etsu Chemical Co., Ltd. made a powder (Nan), and synthesized β-Sialon by the same method as in Example 1. The obtained product was a green hard agglomerate formed on the surface thereof. There is a reddish-brown precipitate. This product is as difficult to accomplish powdering by mild disintegration as in the case of Example 1. Thus, it is pulverized by oxidizing the mortar until it passes through the sieve 15 Before sieving, the sieve was further sieved with a sieve of 45 μm. The method was the same as in Example 1. Heat treatment and acid treatment of the powder passing through the sieve were carried out to obtain a p-type Sialon phosphor. As a result of XRD measurement of the phosphor, the crystal phase was a p-type Sialon single phase. 19/25 201215664 a = 0.7604 nm The lattice constant of c = β-Sialon is 0.2909nm. The 'A1 and Ευ content of the '- 光 光 46.46, 〇.22% by mass, the transition metal content Below PP: a comparison of the application of Example 1, especially the EU content is also reduced. Into the heart, the results of the particle size distribution of the workforce, volume basis: 1% of the two 'knife rate diameter ( D10) is '4, m; 90% diameter (D90) is 43 3μηι. ^ K for J: 鸯 体 body wavelength 4〇5Μ near ultraviolet light excitation (4CK “partial efficiency, external quantum efficiency QEX and CIEy are M pi * 9 5%, 39 2%, 〇·304, 〇.655, respectively; the cases excited by blue with a wavelength of 455 nm are 45.1%, 68.4%, 3_, 〇314, respectively. Compared with the examples! -Comparison's solid solution (4) Sialon has a small amount and low absorption rate, so the external quantum efficiency becomes low. [Examples 2 to 4, comparison 2 to 4] In addition to the mixing ratio of the niobium powder and the aluminum nitride powder, and the ', the degree of twist, and the temperature of the nitrile, the synthesis temperature of the niobium powder is displayed in the form of "exhibition", For example, the synthesis of nitriding, the sintering of p-type Sialon, and the post-treatment (heat treatment and acid treatment) are carried out to obtain a β-Sialon phosphor. Also, in Example 3 and Comparative Example 2, Alumina powder is also added to adjust the amount of oxygen in the β-Sialon crystal. In "Table 1", the β ratio calculated from XRD of the nitride powder, the amount of metal ruthenium, and the A1 content determined by ICP and the first transition metal έ i are shown. In "Table 2", the lattice constant, composition, impurity content, and particle size distribution of the obtained ?-sialon phosphor are shown; and in "Table 3", the light-emitting characteristics are shown. 20/25 201215664 [Table 1]
Si純度 (%) 混合比(質量%) fl化溫度 (°C) IU匕後 之XRD 1CP 分析 Si AIN ΑΙ:0? P率 Si量 A1量 (質 f %) 第一過渡 金屬含量 (ppm) 實施例i 99.999 98.81 U9 0 1500 90.2 0.8 0.46 2 實施例2 99.999 99.03 0.97 0 1500 91.3 0.7 0.36 6 實施例3 99.999 97.4 1.61 1 1500 88.7 1.2 0.96 4 實施例4 99.999 98.81 1.19 0 1450 88.3 1.3 0.45 6 比較例2 99.999 94.66 2.38 2.96 1500 89.5 1.4 1.93 4 比較例3 99.9 98.81 1,19 0 1500 89 2.5 0.48 260 比較例4 99.999 98.81 1.19 0 1350 70.5 20.5 0.49 4 〔表2〕 晶格常數 (nm) ICP分析 粒度分布 (μηι) a c A1量 (質量%) Eu量 (質量%) 第一過渡金 屬含量(ppm) DIO D90 實施例1 0.7606 0.2908 0.49 0.77 < 5ppm 6.7 38.4 實施例2 0.7605 0.2907 0.39 0.67 < 5ppm 6.5 32.1 實施例3 0.7607 0.2909 0.86 0.68 < 5ppm 7.9 37.3 實施例4 0.7606 0.2908 0.46 0.71 < 5ppm 5.9 28.9 比較例1 0.7604 0.2909 0.46 22 < 5ppm 4.3 43.3 比較例2 0,7608 0.2911 1.7 0.72 < 5ppm 6.3 33.3 比較例3 0.7604 0.2908 0.37 0.55 18ppm 8.7 42.1 比較例4 0.7605 0.2909 0.42 0.63 < 5ppm 8.7 45.5 21/25 201215664 〔表3〕Si purity (%) Mixing ratio (% by mass) fllation temperature (°C) XRD after IU 1CP analysis Si AIN ΑΙ: 0? P rate Si amount A1 amount (mass f %) First transition metal content (ppm) Example i 99.999 98.81 U9 0 1500 90.2 0.8 0.46 2 Example 2 99.999 99.03 0.97 0 1500 91.3 0.7 0.36 6 Example 3 99.999 97.4 1.61 1 1500 88.7 1.2 0.96 4 Example 4 99.999 98.81 1.19 0 1450 88.3 1.3 0.45 6 Comparative Example 2 99.999 94.66 2.38 2.96 1500 89.5 1.4 1.93 4 Comparative Example 3 99.9 98.81 1,19 0 1500 89 2.5 0.48 260 Comparative Example 4 99.999 98.81 1.19 0 1350 70.5 20.5 0.49 4 [Table 2] Lattice constant (nm) ICP analysis particle size distribution (μηι) ac A1 amount (% by mass) Eu amount (% by mass) First transition metal content (ppm) DIO D90 Example 1 0.7606 0.2908 0.49 0.77 < 5 ppm 6.7 38.4 Example 2 0.7605 0.2907 0.39 0.67 < 5 ppm 6.5 32.1 Example 3 0.7607 0.2909 0.86 0.68 < 5 ppm 7.9 37.3 Example 4 0.7606 0.2908 0.46 0.71 < 5 ppm 5.9 28.9 Comparative Example 1 0.7604 0.2909 0.46 22 < 5 ppm 4.3 43.3 Comparative Example 2 0,7608 0.2911 1.7 0.72 < 5 ppm 6.3 33.3Comparative Example 3 0.7604 0.2908 0.37 0.55 18 ppm 8.7 42.1 Comparative Example 4 0.7605 0.2909 0.42 0.63 < 5 ppm 8.7 45.5 21/25 201215664 [Table 3]
肱每 P ~ -LJ~~0.323 Ο.ι 石夕原料mn〜3及比較例2作—比較可發現,隨著氮化 數c同量的增加,p型賽隆螢光體之晶格常 色度向紅色側位移。 茧尤尤。曰擴大 原料二"所示,使用第-過渡金屬雜質量多的 '、枓叔末之情形’或是 氮化矽原料之情报…± j使用金屬矽多的 處理,第-過二 行酸處理等之高純度化 留於螢光體中或金屬石夕某種程度上也將殘 「 使件發光特性降低。 例二之>量=广測定之結* ’除了於比較 光體之結晶相僅^金屬/被檢測出以外,所得到的螢 1差為β型賽隆相。 產業上之利用可能性 22/25 201215664 由於本發明之β型赛隆螢光體係刮用從紫外〜藍色 光之寬廣的波長所激發,顯示高亮度且寧#化的綠色發光’能 夠適合使驗將藍色或料光作自色LED螢光體, 尤其’能夠適合使用於影像顯示裝置。 ★呈ΐί,由於本發明之螢先體於高溫卞之亮度降低少,另外 域:能二若;用於上述影像顯示裳置領 小,^-長^^變化之亮度及發光色變化 前述特徵之料^明之螢光體的製造方法㈣穩定提供具有 【圖式簡料=,越上麵常有用。 第1圖係麵_ 螢光體之藉由:有關實施例1〜3及比較例2之β型賽隆 光瑨之圖面代長455nm外部激發光所得到的螢光 [主I- '用圖形。 广件符銳言兒明】 無0 23/25肱Each P ~ -LJ~~0.323 Ο.ι Shixi raw materials mn~3 and Comparative Example 2 -Compared, as the number of nitriding numbers c increases, the lattice of p-type Sialon phosphors often The chromaticity shifts to the red side. Yu Youyou.曰Expanding the raw material two", using the first-transition metal miscellaneous mass, 'the situation of the uncle's uncle' or the information of the tantalum nitride raw material...± j using the metal bismuth treatment, the first-per-second acid The high purity of the treatment or the like is left in the phosphor or the metal stone is also somewhat dissipated to reduce the light-emitting characteristics of the article. [Example 2] The amount = the knot of the broad measurement * 'In addition to the crystal of the comparative light body The phase difference is only the metal/detected, and the obtained fluorescein 1 difference is the β-type Sialon phase. Industrial use possibility 22/25 201215664 Since the β-Sialon fluorescent system of the present invention is scraped from ultraviolet to blue Excited by the wide wavelength of the chromatic light, the display of high-brightness and green luminescence can be adapted to make the blue or material light a self-color LED phosphor, especially 'can be suitable for use in image display devices. Since the brightness of the fluorescing precursor of the present invention is less than that of the high temperature enthalpy, the other field: energy can be used for the above-mentioned image display, and the brightness and illuminating color of the change of the brightness and the luminescent color of the above-mentioned image are changed. Ming's method of manufacturing phosphors (4) Stable provisioning Material =, the more often the above is used. Fig. 1 is the surface of the phosphor _ by the external excitation light of 455 nm in the surface of the β-type Sialon of Examples 1 to 3 and Comparative Example 2 Fluorescent [Main I-' with graphics. Wide-formed with sharp words] No 0 23/25
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