201214810 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種層疊散熱基板，可供電子元件使用。具 體而言，本發明係關於一種可供發光二極體使用之層疊散熱基 板。 【先前技術】 近年來隨著高功率發光二極體(LED)技術的發展，其發光 效率已逐漸提升至90〜1201m/W以上。然而，其電光轉換效率 僅約15〜20%。換言之，其輸入之電能中仍有絕大部份轉換成 熱能’這些熱能若不能快速導至外界環境，將會造成晶片溫度 上升’進而影響發光強度及壽命。因此，高功率LED產品的 熱管理問題越來越受到重視。 在LED產品中，印刷電路板是不可或缺的部分，提供電 子元件t裝與互相連接的支撐載體，其中又以散熱基板為主要 材料。一般業界最常使用金屬基板作為散熱基板，如圖丨八所 示，習知電子組裝結構90包含鋁金屬基板10、絕緣層50及 導電層7G。此姻基板最大的散她聊是介於導電層％與 銘金屬基板1G之間的絕緣層5〇。絕緣層5G大多使用環氧樹 脂作為主要㈣，但因其祕導係數舰，必行添加導^ 填料，如氧化!呂、氮化链與氮化爾填料，來提高該層的熱傳 導係數，進而降低該基板的熱阻抗。即使如此，絕緣層％之 熱傳導係數仍遠低於金屬材料，故仍為散熱的主要瓶頭。另一 4 i 201214810 的鋁金广’在*同細种’習知電子組裝結構9。 =銘H)與、層5G財能有設置含靖33的需 i二銅層33触金祕板ω的接著力不佳，易使得 3銅層33自鋁金屬基板10剝離。 【發明内容】 ’具有較佳之 本發明之主要目的為提供一種層疊散熱基板 金屬層附著力。 種層疊散熱基板，具有較薄之 本發明之另一目的為提供一 厚度。 本發明之另一目的為提供一種電子組裝結構，具有較佳之 散熱能力。 本發明之層疊散熱基板包含基板、層疊鍵結層、絕緣層以 及導電層。層疊鍵結層設置於基板上，至少包含第一鍵結層以 及第二鍵結層。第一鍵結層設置於基板上。第二鍵結層設置於 第一鍵結層上。絕緣層設置於層疊鍵結層上。導電層設置於絕 緣層上。 基板包含鋁或鋁合金或銅或銅合金。第二鍵結層係銅或銅 合金。層疊鍵結層進一步包含第三鍵結層，設置於第一鍵結層 及第二鍵結層間，其中第三鍵結層包含金屬、金屬合金或陶 瓷。在較佳實施例中，第一鍵結層含有鋅。第三鍵結層之錄含 量介於90%至100%，磷含量介於〇至10%。層疊鍵結層進 一步包含保護層，設置於絕緣層下，保護層包含金屬、金屬合 金、金屬氧化物或有機化合物。保5蔓層可為銅氧化物或鉻氧化 201214810 物’或可為含氮、含氧、含磷或含硫之有機化合物，亦可為石夕 烷類有機化合物，或亦可為鎳、鈷、鋅、鉻、鉬、銅、鎳合金、 鈷合金、鋅合金、鉻合金、鉬合金、銅合金或其混合物。 絕緣層之材料包含為聚醯亞胺樹脂、聚酰胺酰亞胺樹脂、 聚萘二曱酸樹脂、環氧樹脂、丙烯酸系樹脂、胺基曱酸酯系樹 脂、有機矽樹脂、聚對環二曱苯系樹脂、雙馬來醯亞胺系樹脂、 聚醚酮樹脂、不飽和聚酯樹脂、聚醯胺樹脂、聚氨酯樹脂、酚 醛樹脂、聚醚讽樹脂、聚對苯二曱酸乙二醇酯或其混合物。導 電層係選自錫、錄、銀、銅、金、把、姑、絡、欽、翻、纽、 鎢及I目。 在不同實施例中’層疊散熱基板進一步可包含反側絕緣層 以及反侧導電層。反側絕緣層設置於基板相對層疊鍵結層之另 侧。反側導電層設置於反側絕緣層相對基板之另側。層疊散熱 基板可進一步包含複數個孔洞貫穿反側絕緣層及反側導電 層。反側絕緣層之材料包含為聚醯亞胺樹脂、環氧樹脂、丙烯 酸系樹脂、胺基甲酸酯系樹脂、有機矽樹脂、聚對環二曱苯系 樹脂、雙馬來醯亞胺系樹脂、聚醚酮樹脂、不飽和聚酯樹脂、 聚醯胺樹脂、聚氨酯樹脂、酚酸樹脂、聚醚讽樹脂、聚對苯二 曱酸乙二醇酯或其混合物。反側導電層係選自錫、鎳、銀、銅、 金、把、鈷、鉻、鈦、始、组、鶴及鉬。 本發明之電子組裝結構包含前述層疊散熱基板以及電子 元件。其中’絕緣層及導電層進一步於層疊鍵結層上圍出容置 空間，容置空間暴露層疊鍵結層。電子元件設置於容置空間内 及層疊鍵結層上，且與導電層電連接。電子元件較佳係發光二 6 201214810 極體。 【實施方式】 如圖2所示之實施例，本發明之層疊散熱基板800包含基 板100、層疊鍵結層300、絕緣層500以及導電層700。具體 而言，基板100較佳係使用金屬或合金製成，由於此類材料兼 具有良好的導熱性，故可進一步提升散熱基板80〇整體之散熱 效果。其中’因為鋁質地較輕、價格較低且具有良好的導熱性， 故在較佳實施例中’基板1〇〇係使用鋁或鋁合金製成。 層鍵結層300設置於基板1〇〇上，至少包含第一鍵結層 310以及第二鍵結層320。第一鍵結層310設置於基板100上， 較佳但不限含有鋅。第二鍵結層320設置於第一鍵結層310 上。第二鍵結層320係銅或銅合金。其中，第二鍵結層320與 使用紹或链合金製成之基板1〇〇之附著力較低，而第一鍵結層 310則與基板1〇〇具有良好之附著力。 層登鍵結層300進一步包含第三鍵結層330，設置於第一 鍵結層310及第二鍵結層320間，其中第三鍵結層330包含金 屬、金屬合金或陶瓷。金屬可係選自錫、鎳、銀、銅、金、鈀、 鈷、鉻、鈦、鉑、鈕、鎢及鉬。在較佳實施例中，第三鍵結層 330係錄合金’鎳含量介於90%至1〇〇%，磷含量介於〇至1〇 %。其中，第三鍵結層330與第一鍵結層310和與第二鍵結層 320均具有良好之附著力。進一步而言，第三鍵結層33〇分別 與第一鍵結層310和與第二鍵結層320間之附著力較佳，係大 於第一鍵結層310和與第二鍵結層320間之附著力。因此，第 201214810 一鍵結層320可藉由第三鍵結層33〇更良好地附著在第一鍵社 層310上。 ~ 综言之’如圖3A所示之實施例，層疊鍵結層3〇〇除了包 含第一鍵結層31〇以及第二鍵結層320外，可進一步包含多個 鍵結層依序層疊於第一鍵結層310及第二鍵結層320間，每〜. 相鄰鍵結層彼此間具有良好的附著力。藉此，層疊於最上層之· 鍵結層即使與基板1 〇〇的附著力不佳，仍可利用夾設於其間的 鍵結層良好地附著於基板1〇〇上。其中，各個鍵結層可選用相 同或不同之材料，亦即可用相同或不同的材料依次層疊出相鄰 之鍵結層。另-方面’製程當中可藉由控娜成條件例如比 例、溫度、時間等，令使用相同材料之不同鍵結層具有不同之 物理、化學性質。 絕緣層500設置於層疊鍵結層3〇〇上。導電層7〇〇設置 於絕緣層500上。其中，絕緣層之材料包含為聚醢亞胺樹脂、 聚醜胺醜亞麵脂、聚萘二甲酸樹脂、環氧樹脂、丙婦酸系 树脂、胺基曱酸酯系樹脂、有機矽樹脂、聚對環二甲苯系樹 脂、雙馬來醯亞胺系樹脂、聚醚酮樹脂、不飽和聚醋樹脂、 聚醯胺樹脂、聚氨酯樹脂、酚醛樹脂、聚醚讽樹脂、聚對苯 二曱酸乙二醇酯或其混合物。導電層係選自錫、鎳、銀、銅、 金、纪、銘、絡、欽、翻、纽、鶴及翻。 如圖3B所示之不同實施例，層疊鍵結層3〇〇進一步包含 保護層333，設置於第二鍵結層320及絕緣層5〇〇間。換言之， 保護層333係層疊鍵結層300包含之多個鍵結層之最上層。保 護層333包含金屬、金屬合金、金屬氧化物或有機化合物。在 8 201214810 此實施例中第二鍵結層320係銅，保護層333係銅氧化物。保 護層333不僅分別與其上、下之絕緣層5〇〇及第二鍵結層32〇 具有良好的附著力，更可具有防焊等保護效果。然而在其它不 同實施例中，第二鍵結層320可為銅合金，保護層333可為其 它金屬氧化物（例如：鉻氧化物）、有機化合物（例如：含氮、 含氧、含磷或含硫之有機化合物或矽烷類有機化合物）、一種 或多種金屬（如鎳、鈷、鋅、鉻、鉬、銅）之本身或其合金之 混合物。其中，保護層333進一步可以層疊方式設置，且為上 述的任意組合。 如圖4所示’在不同實施例中，層疊散熱基板8〇〇進一步 可包含反側絕緣層550以及反側導電層770。反側絕緣層550 設置於基板100相對層疊鍵結層300之另側。反側導電層770 設置於反側絕緣層550相對基板100之另側。反侧絕緣層550 之材料包含為聚醯亞胺樹脂、聚酰胺酰亞胺樹脂、聚萘二甲酸 樹脂、環氧樹脂、丙烯酸系樹脂、胺基曱酸酯系樹脂、有機矽 樹脂、聚對環二曱苯系樹脂、雙馬來醯亞胺系樹脂、聚醚酮樹 脂、不飽和聚酯樹脂、聚醯胺樹脂、聚氨酯樹脂、酚醛樹脂、 聚醚讽樹脂、聚對苯二甲酸乙二醇酯或其混合物。反侧導電層 770係選自錫、鎳、銀、銅、金、把、銘'鉻、鈦、鉑、组、 鶴及I目。 如圖4所示之不同實施例中，層疊散熱基板800可進一步 包含複數個孔洞400貫穿反側絕緣層55〇及反側導電層770。 在不同實施例中，複數個孔洞4〇〇内可填充有導熱材料（未繪 示）。其中，孔洞400之位置、數量、内徑或分佈方式等，可 201214810 依設計需求變化。導熱材料之熱傳導係數較佳係大於 10W/mK ’包含金屬、合金、陶竞、金屬或略高分子複合材 料、導熱石夕樹脂或其混合物。其中，金屬可為銀'銅、銘、錄 或鐵，合金可為錫錯合金、錫錯銀合金或踢銀銅合金。陶究可 為氧化紹、氮化石朋、氮脑、碳化石夕、奈米碳管或石墨等。導 熱材料填充於孔洞働的方式可視其材料特性變化，例如可在 導熱石夕樹料熱物為流動狀態時將其灌入孔洞4〇〇，或使金屬 導熱物電娜成於孔洞働中，或以機械力將固態金屬高分 子複合材料導熱㈣人細。其中，賴物不限於填滿孔 洞4〇〇，亦可以覆蓋孔洞400側壁之方式設置。在不同實施例 中，複數個孔洞400内亦可設置電子元件（未繪示）^ 如圖5A所示之實施例’本發明之電子組裝結構包含 前述層疊散熱基板800以及電子元件·。其中，絕緣層· 及導電層700進-步於層疊鍵結層3〇〇上圍出容置空間6〇〇， 谷置空間6GG暴露層疊鍵結層300。在較佳實施射，係將圖 2所示之層疊散熱基板8〇〇以物理或化學方絲刻去除特定區 域之絕緣層500及導電層700，以形成容置空間_。如圖5八 所示’電子元件200設置於容置空間_峡層疊鍵結層3〇〇 上且與導電層7〇〇電連接。其中，連接的方式較佳係使用導 線222。電子元件200較佳係發光二極體，亦即電子組裝結構 900車又佳係用於發光二極體照明裝置。然而在不同實施例中， 電子組裝結構_可用於其它電子裝f具體而言，在本發明 之電子組裝結構900中’電子元件200與基板1〇〇間沒有絕緣 層500 ’可使整體厚度減少。另一方面，電子元件運作時 201214810 產生之熱可較直接地傳送至基板100散熱，可提升散熱效率。 如圖5B所不之不同實施例，電子元件2〇〇與層疊鍵結層 300之第二鍵結層32〇間、第二鍵結層32〇與第三鍵結層33〇 間、第二鍵結層330與第一鍵結層31〇間、第一鍵結層3〗〇與 基板100間分別具有良好之附著力。因此，即使電子元件· 直接與基板100的附著力不佳，仍可利用夾設於其間的第一鍵 結層310、第三鍵結層33〇及第二鍵結層32〇良好地附著於基 板100上。 在如圖6A至圖6C所示之實施例中，其中，保護層333 :選擇性地在製程中保留（如圖6A)或絲（如圖6B)。換 言之’保護層333可在製程中保留而如圖从所示同時設置於 絕緣層500下且暴露於容置空間_，或可在製程中去除而如 圖6B所tf僅设置於絕緣層5〇〇下。另一方面絕緣層獅可 進^以層疊方式设置。例如在圖6C所示之實施例巾，絕緣 曰鄉c έ帛、絕緣層51〇及第二絕緣層52〇。故可藉此增加 接著效果。進-步而言，如圖7Α及圖7Β所示，絕緣層· 及導電層700亦可層疊設置。 雖然前述的描述及圖式已揭示本發明之較佳實施例，必須 瞭解到各種增添、許多修改和取代可能使祕本發明較佳實施 例，而々不會脫離如所附申請專利範圍所界定的本發明原理之精 神及範圍。熟悉本發明所屬技術領域之—般技藝者將可體會， 本發明可使用於許多形式、結構、佈置、比例、材料、元件和 、、且件的修改。目此，本文於此所揭示的實施例應被視為用以說 月本么明’而非用讀制本發明。本發明的翻應由後附申請 201214810 專J範圍所界疋’並涵蓋其合法均等物，並不限於先前的描述。 【圖式簡單說明】 圖1A及1B為習知技術示意圖； 圖2、3八、犯、4、5八、53及6八為本發明不同實施例示意圖； 圖6B為本發明較佳實施例示意圖；以及 圖6C、7A及7B為本發明不同實施例示意圖。 【主要元件符號說明】 10鋁金屬基板 333保護層 50絕緣層 400孔洞 70導電層 500絕緣層 90電子組裝結構 510第一絕緣層 100基板 520第二絕緣層 200電子元件 550反侧絕緣層 222導線 600容置空間 300層疊鍵結層 700導電層 310第一鍵結層 770反側導電層 320第二鍵結層 800層疊散熱基板 330第三鍵結層 900電子組裝結構 12201214810 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a laminated heat dissipation substrate which can be used for electronic components. In particular, the present invention relates to a laminated heat sink substrate for use with a light emitting diode. [Prior Art] In recent years, with the development of high-power light-emitting diode (LED) technology, the luminous efficiency has been gradually increased to 90 to 1201 m/W or more. However, its electro-optical conversion efficiency is only about 15 to 20%. In other words, most of the input electrical energy is converted into thermal energy. If these thermal energy cannot be quickly introduced to the external environment, the temperature of the wafer will rise, which will affect the luminous intensity and lifetime. Therefore, the thermal management of high-power LED products is receiving more and more attention. In the LED product, the printed circuit board is an indispensable part, and the electronic component t is provided with a supporting carrier connected to each other, and the heat dissipating substrate is mainly used as a main material. The metal substrate is most commonly used as a heat sink substrate in the industry. As shown in Fig. 28, the conventional electronic assembly structure 90 includes an aluminum metal substrate 10, an insulating layer 50, and a conductive layer 7G. The biggest talk of this board is the insulating layer 5〇 between the conductive layer % and the metal substrate 1G. Most of the insulating layer 5G uses epoxy resin as the main (4), but because of its secret coefficient, it is necessary to add conductive fillers, such as oxidized Lu, nitriding chain and nitride filler, to improve the thermal conductivity of the layer. The thermal impedance of the substrate is lowered. Even so, the heat transfer coefficient of the insulating layer is still much lower than that of the metal material, so it is still the main bottle head for heat dissipation. Another 4 i 201214810 aluminum-golden 'in the same class' is a well-known electronic assembly structure 9. = Ming H) and the layer 5G financial energy has the need to set the Jing 33. The second copper layer 33 touches the gold secret plate ω, the adhesion is not good, and the 3 copper layer 33 is easily peeled off from the aluminum metal substrate 10. SUMMARY OF THE INVENTION It is a preferred object of the present invention to provide a laminated heat sink substrate metal layer adhesion. A laminated heat sink substrate having a thinner thickness is another object of the present invention to provide a thickness. Another object of the present invention is to provide an electronic assembly structure having better heat dissipation capability. The laminated heat dissipation substrate of the present invention comprises a substrate, a laminated bonding layer, an insulating layer, and a conductive layer. The layered bonding layer is disposed on the substrate and includes at least a first bonding layer and a second bonding layer. The first bonding layer is disposed on the substrate. The second bonding layer is disposed on the first bonding layer. The insulating layer is disposed on the laminated bonding layer. The conductive layer is disposed on the insulating layer. The substrate comprises aluminum or an aluminum alloy or copper or a copper alloy. The second bonding layer is copper or a copper alloy. The layered bonding layer further includes a third bonding layer disposed between the first bonding layer and the second bonding layer, wherein the third bonding layer comprises a metal, a metal alloy or a ceramic. In a preferred embodiment, the first bonding layer contains zinc. The third bond layer has a recorded content of 90% to 100% and a phosphorus content of 〇 to 10%. The layered bonding layer further includes a protective layer disposed under the insulating layer, the protective layer comprising a metal, a metal alloy, a metal oxide or an organic compound. The 5 vine layer may be copper oxide or chromium oxide 201214810 ' or may be a nitrogen, oxygen, phosphorus or sulfur containing organic compound, may also be an alkylene organic compound, or may be nickel or cobalt , zinc, chromium, molybdenum, copper, nickel alloys, cobalt alloys, zinc alloys, chromium alloys, molybdenum alloys, copper alloys or mixtures thereof. The material of the insulating layer comprises a polyimide resin, a polyamideimide resin, a polynaphthalene resin, an epoxy resin, an acrylic resin, an amino phthalate resin, an organic oxime resin, and a poly-ply ring. Anthraquinone resin, bismaleimide resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, polyurethane resin, phenol resin, polyether resin, polyethylene terephthalate Ester or a mixture thereof. The conductive layer is selected from the group consisting of tin, ruthenium, silver, copper, gold, ruthenium, ruthenium, ruthenium, ruthenium, neon, tungsten and I. In various embodiments, the stacked heat sink substrate may further comprise a reverse side insulating layer and a reverse side conductive layer. The reverse side insulating layer is disposed on the other side of the substrate opposite to the laminated bonding layer. The reverse side conductive layer is disposed on the other side of the opposite side insulating layer opposite to the substrate. The stacked heat dissipation substrate may further include a plurality of holes extending through the reverse side insulating layer and the reverse side conductive layer. The material of the reverse insulating layer includes a polyimide resin, an epoxy resin, an acrylic resin, a urethane resin, an organic resin, a polyparaxylene resin, and a bismaleimide system. Resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, phenolic resin, polyether resin, polyethylene terephthalate or a mixture thereof. The reverse conductive layer is selected from the group consisting of tin, nickel, silver, copper, gold, handle, cobalt, chromium, titanium, sorghum, group, crane, and molybdenum. The electronic assembly structure of the present invention comprises the above laminated heat dissipation substrate and an electronic component. The insulating layer and the conductive layer further enclose an accommodating space on the laminated bonding layer, and the accommodating space exposes the laminated bonding layer. The electronic component is disposed in the accommodating space and on the laminated bonding layer, and is electrically connected to the conductive layer. The electronic component is preferably a light-emitting diode 6 201214810 polar body. [Embodiment] As shown in the embodiment shown in Fig. 2, the laminated heat dissipation substrate 800 of the present invention comprises a substrate 100, a laminated bonding layer 300, an insulating layer 500, and a conductive layer 700. Specifically, the substrate 100 is preferably made of a metal or an alloy. Since such a material has good thermal conductivity, the heat dissipation effect of the heat dissipation substrate 80 can be further improved. Wherein 'the substrate 1 is made of aluminum or an aluminum alloy because the aluminum material is lighter, less expensive, and has good thermal conductivity. The layer bonding layer 300 is disposed on the substrate 1 and includes at least a first bonding layer 310 and a second bonding layer 320. The first bonding layer 310 is disposed on the substrate 100, preferably but not limited to zinc. The second bonding layer 320 is disposed on the first bonding layer 310. The second bonding layer 320 is copper or a copper alloy. Wherein, the adhesion between the second bonding layer 320 and the substrate 1 made of a chain alloy is low, and the first bonding layer 310 has good adhesion to the substrate 1 . The layer bonding layer 300 further includes a third bonding layer 330 disposed between the first bonding layer 310 and the second bonding layer 320, wherein the third bonding layer 330 comprises a metal, a metal alloy or a ceramic. The metal may be selected from the group consisting of tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, knobs, tungsten, and molybdenum. In a preferred embodiment, the third bonding layer 330 is alloyed with a nickel content of from 90% to 1% by weight and a phosphorus content of from 〇 to 1%. The third bonding layer 330 has good adhesion to both the first bonding layer 310 and the second bonding layer 320. Further, the adhesion between the third bonding layer 33 and the first bonding layer 310 and the second bonding layer 320 is better than that of the first bonding layer 310 and the second bonding layer 320. Adhesion between the two. Therefore, the 201214810 bonding layer 320 can be more closely attached to the first bonding layer 310 by the third bonding layer 33. ~ In summary, as shown in the embodiment of FIG. 3A, the layered bonding layer 3 includes a plurality of bonding layers sequentially stacked in addition to the first bonding layer 31 and the second bonding layer 320. Between the first bonding layer 310 and the second bonding layer 320, each adjacent bonding layer has good adhesion to each other. As a result, the bonding layer laminated on the uppermost layer can be favorably adhered to the substrate 1 by the bonding layer interposed therebetween even if the adhesion to the substrate 1 is not good. Wherein, the bonding layers may be made of the same or different materials, and the adjacent bonding layers may be sequentially laminated with the same or different materials. In the other aspect, the different bonding layers using the same material have different physical and chemical properties by controlling conditions such as ratio, temperature, time, and the like. The insulating layer 500 is disposed on the laminated bonding layer 3A. The conductive layer 7 is disposed on the insulating layer 500. The material of the insulating layer comprises a polyimide resin, a poly-imide ugly fat, a polynaphthalene resin, an epoxy resin, a propylene glycol resin, an amino phthalate resin, an organic oxime resin, Poly-p-xylene resin, bismaleimide resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, polyurethane resin, phenolic resin, polyether resin, poly-terephthalic acid Ethylene glycol ester or a mixture thereof. The conductive layer is selected from the group consisting of tin, nickel, silver, copper, gold, Ji, Ming, Luo, Qin, Turn, New Zealand, Crane and Turn. As shown in different embodiments of FIG. 3B, the laminated bonding layer 3 further includes a protective layer 333 disposed between the second bonding layer 320 and the insulating layer 5A. In other words, the protective layer 333 is the uppermost layer of the plurality of bonding layers included in the laminated bonding layer 300. The protective layer 333 contains a metal, a metal alloy, a metal oxide or an organic compound. In 8201214810, in this embodiment, the second bonding layer 320 is copper, and the protective layer 333 is copper oxide. The protective layer 333 not only has good adhesion to the upper and lower insulating layers 5〇〇 and the second bonding layer 32〇, but also has a protective effect such as solder resist. However, in other different embodiments, the second bonding layer 320 may be a copper alloy, and the protective layer 333 may be other metal oxides (eg, chromium oxide), organic compounds (eg, nitrogen, oxygen, phosphorus, or a sulfur-containing organic compound or a decane-based organic compound), a mixture of one or more metals (such as nickel, cobalt, zinc, chromium, molybdenum, copper) or a mixture thereof. The protective layer 333 may be further disposed in a stacked manner and is any combination of the above. As shown in FIG. 4, in various embodiments, the stacked heat dissipation substrate 8A may further include a reverse side insulating layer 550 and a reverse side conductive layer 770. The reverse side insulating layer 550 is disposed on the other side of the substrate 100 opposite to the laminated bonding layer 300. The reverse side conductive layer 770 is disposed on the other side of the reverse side insulating layer 550 with respect to the substrate 100. The material of the reverse insulating layer 550 includes a polyimide resin, a polyamideimide resin, a polynaphthalene resin, an epoxy resin, an acrylic resin, an amino phthalate resin, an organic resin, and a poly-pair. Diphenylene resin, bismaleimide resin, polyetherketone resin, unsaturated polyester resin, polyamide resin, polyurethane resin, phenolic resin, polyether resin, polyethylene terephthalate Ester or a mixture thereof. The reverse conductive layer 770 is selected from the group consisting of tin, nickel, silver, copper, gold, palladium, chrome, titanium, platinum, group, crane, and I mesh. In the different embodiments shown in FIG. 4, the stacked heat dissipation substrate 800 may further include a plurality of holes 400 extending through the reverse side insulating layer 55 and the reverse side conductive layer 770. In various embodiments, a plurality of holes 4 can be filled with a thermally conductive material (not shown). Among them, the position, number, inner diameter or distribution of the hole 400 can be changed according to the design requirements of 201214810. The thermal conductivity of the thermally conductive material is preferably greater than 10 W/mK' including metals, alloys, ceramics, metallic or slightly polymeric composites, thermally conductive lithographic resins or mixtures thereof. Among them, the metal may be silver 'copper, inscription, recorded or iron, and the alloy may be tin-tin alloy, tin-silver alloy or silver-copper alloy. The ceramics can be oxidized, nitrided, nitrogen-brain, carbonized stone, carbon nanotubes or graphite. The manner in which the heat conductive material is filled in the hole 可视 may vary depending on the material properties, for example, the heat transfer material may be poured into the hole when the hot material is in a flowing state, or the metal heat conductive material may be formed into the hole 働, or The solid metal polymer composite material is thermally conductive by mechanical force (4). Among them, the object is not limited to filling the hole 4, but also covering the side wall of the hole 400. In various embodiments, electronic components (not shown) may be disposed in the plurality of holes 400. Embodiments as shown in Fig. 5A The electronic assembly structure of the present invention includes the above-described laminated heat dissipation substrate 800 and electronic components. The insulating layer and the conductive layer 700 further surround the accommodating space 6 于 on the laminated bonding layer 3 , and the glazing space 6 GG exposes the laminated bonding layer 300 . In the preferred embodiment, the laminated heat-dissipating substrate 8 shown in FIG. 2 is physically or chemically removed to remove the insulating layer 500 and the conductive layer 700 of a specific region to form an accommodating space _. As shown in Fig. 5, the electronic component 200 is disposed on the accommodating space _ the gorge bond layer 3 且 and electrically connected to the conductive layer 7 。. Among them, the connection is preferably carried out using the wire 222. The electronic component 200 is preferably a light-emitting diode, that is, an electronic assembly structure. The 900 car is preferably used for a light-emitting diode lighting device. However, in various embodiments, the electronic assembly structure can be used for other electronic devices. Specifically, in the electronic assembly structure 900 of the present invention, there is no insulating layer 500 between the electronic component 200 and the substrate 1 to reduce the overall thickness. . On the other hand, the heat generated by the electronic components during operation 201214810 can be directly transmitted to the substrate 100 for heat dissipation, which can improve the heat dissipation efficiency. As shown in FIG. 5B, the electronic component 2 is connected to the second bonding layer 32 of the laminated bonding layer 300, the second bonding layer 32 is separated from the third bonding layer 33, and the second The bonding layer 330 and the first bonding layer 31, and the first bonding layer 3 and the substrate 100 respectively have good adhesion. Therefore, even if the adhesion of the electronic component directly to the substrate 100 is not good, the first bonding layer 310, the third bonding layer 33, and the second bonding layer 32 interposed therebetween can be well adhered thereto. On the substrate 100. In the embodiment shown in Figures 6A-6C, wherein the protective layer 333 is selectively retained (as in Figure 6A) or filament (Figure 6B) in the process. In other words, the protective layer 333 may remain in the process and be disposed under the insulating layer 500 and exposed to the accommodating space _ as shown in the drawing, or may be removed in the process and is disposed only in the insulating layer 5 as shown in FIG. 6B. Your majesty. On the other hand, the insulating layer lion can be placed in a stacked manner. For example, in the embodiment of Fig. 6C, the insulating tape, the insulating layer 51, and the second insulating layer 52 are. Therefore, it is possible to increase the effect. Further, as shown in FIGS. 7A and 7B, the insulating layer and the conductive layer 700 may be stacked. While the foregoing description of the preferred embodiments of the invention, the embodiments of the invention The spirit and scope of the principles of the invention. It will be appreciated by those skilled in the art that the present invention may be practiced in many forms, structures, arrangements, ratios, materials, components, and components. As such, the embodiments disclosed herein are to be considered as being The responsiveness of the present invention is defined by the appended claims 201214810 and the legal equivalents thereof are not limited to the foregoing description. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A and FIG. 1B are schematic diagrams of the prior art; FIG. 2, FIG. 3, guilt, 4, 5, 8, and 6 are schematic diagrams of different embodiments of the present invention; FIG. 6B is a preferred embodiment of the present invention. Schematic; and Figures 6C, 7A and 7B are schematic views of different embodiments of the present invention. [Main component symbol description] 10 aluminum metal substrate 333 protective layer 50 insulating layer 400 hole 70 conductive layer 500 insulating layer 90 electronic assembly structure 510 first insulating layer 100 substrate 520 second insulating layer 200 electronic component 550 reverse insulating layer 222 wire 600 Storing space 300 laminated bonding layer 700 conductive layer 310 first bonding layer 770 reverse conductive layer 320 second bonding layer 800 laminated heat dissipation substrate 330 third bonding layer 900 electronic assembly structure 12