TW201214528A - Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell element - Google Patents

Abstract

The composition for forming p-type diffusion layer contains an acceptor element-containing glass powder and a dispersion medium. The acceptor element-containing glass powder contains an acceptor element-containing material and a glass component material. A content of the acceptor element-containing material is from 1% by mass to 90% by mass. A p-type diffusion, layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Description

201214528 • Soil/▲▲ VI. Description of the Invention: [Technical Field] The present invention relates to a composition for forming a p-type diffusion layer of a solar cell element, a method for producing a P-type diffusion layer, and a solar cell element. In a more detailed manner, the present invention relates to an internal stress which can reduce a ruthenium substrate as a semiconductor substrate, suppress damage of a crystal grain boundary, suppress growth of crystal defects, and suppress warpage. P-type diffusion layer formation technique. [Prior Art] The manufacturing steps of the prior 矽 solar cell element will be described. First, in order to promote the optical confinement effect (c〇nfmement effect), it is required to form a p-type slab substrate having a texture structure, followed by a mixed gas of oxychlorinated (P0Cl3), nitrogen, and oxygen. The environment is at 800. (: ~90 (TC performs tens of minutes of processing to form an n-type diffusion layer on the substrate in the same manner. In this prior method, since the diffusion of phosphorus is performed using a mixed gas, not only the n-type diffusion layer is formed on the surface. An n-type diffusion layer is also formed on the side surface and the back surface. For these reasons, side etching is required to perform the n-type diffusion layer for removing the side surface. In addition, the n-type diffusion layer on the back side needs to be converted. A sputum-type diffusion layer is thus printed on the back side of the lion paste, which is then calcined (sintered) so that the n-type diffusion layer transforms the ρ+ type layer and simultaneously obtains an ohmic contact. However, the layer formed by the paste The conductivity is low, and in order to reduce the sheet resistance, the aluminum layer usually formed on the entire back surface must have a thickness of about 10 μm to about 20 after calcination. Further, if thicker the layer is formed as described in 4 201214528 Because the thermal expansion coefficient of Shi Xi differs greatly from the expansion coefficient of Shao, this difference leads to the generation of large internal stress in the stone substrate during the process of calcination and cooling, which promotes Damage to crystal grain boundaries, growth of crystal defects, and cause of warpage. In order to solve this problem, there is a method of reducing the amount of coating of the paste composition and thinning the back electrode layer. However, if the coating of the paste composition is reduced The amount of the surface of the P-type solar cell substrate diffused to the inside is insufficient. As a result, the desired back surface field 'B SF ' effect (the collection of the generated carrier) cannot be achieved. The efficiency (c〇iiec touch efficiency) is caused by the p ^ [the effect of the presence of the layer), and the problem of the deterioration of the characteristics of the solar cell is caused by the problem. Therefore, for example, Japanese Laid-Open Patent Publication No. 2-3-223813 proposes a a paste composition comprising an aluminum powder, an organic vehicle, and an inorganic compound powder having a thermal expansion coefficient smaller than that of aluminum and having any one of a melting temperature, a softening temperature, and a decomposition temperature higher than a melting point of aluminum. When the paste composition contained in the Japanese Patent Laid-Open Publication No. 2003-223813 is used, the warpage may not be sufficiently suppressed. In order to provide a method for manufacturing a solar cell element using a tantalum substrate, it is possible to suppress the occurrence of internal stress in the tantalum substrate and warpage of the substrate, and the present invention has been made in view of the above problems. A p-type diffusion layer is formed, and a solar cell element having a low surface resistance value = a composition for forming a P-type diffusion layer, a method for producing a p-type diffusion layer, and a method for producing a solar cell element can be produced.

The method for solving the above problems is as follows. &lt;1&gt; A composition for forming a P-type diffusion layer, comprising: a glass powder containing an acceptor element, and a dispersion medium, wherein the glass powder includes a substance containing an acceptor element, and a glass component substance, the glass The content ratio of the above-mentioned receptor element-containing substance in the powder is from 1% by mass to 90% by mass. <2> The composition for forming a p-type diffusion layer according to the above <1>, wherein the acceptor element is at least one selected from the group consisting of B (boron), A1 (aluminum), and Ga (gallium). &lt;3&gt; The composition for forming a p-type diffusion layer according to the above &lt;1&gt; or <2>, wherein the glass powder containing the above-mentioned acceptor element comprises: selected from the group consisting of B2〇3, Al2〇3, and Ga203 At least one substance containing an acceptor element; and at least one glass component selected from the group consisting of SiO 2 , K 20 , Na 20 , Li 20 , BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, T120, SnO, ZrO 2 and Mo03 substance. &lt;4&gt; A method of producing a ruthenium-type diffusion layer, comprising: a step of applying a composition for forming a p-type diffusion layer according to any one of the above &lt;1&gt; to &lt;3&gt; The step of diffusion processing. &lt;5&gt; - A method of producing a solar cell element, comprising: forming a composition for forming a P-type diffusion layer according to any one of the above-mentioned <1> to <3> on a semiconductor substrate a step of performing a thermal diffusion process to form a p-type diffusion layer, and a step of forming an electrode on the formed p-type diffusion layer. [Effect of the Invention] 6 201214528 According to the present invention, in the manufacturing step of the solar cell element using the ruthenium substrate, the internal stress in the ruthenium substrate and the warpage of the substrate can be suppressed, and a type expansion layer can be formed. Further, by setting the range of the content ratio of the substance containing the acceptor element of the invention, the surface resistance value is lowered, and the performance as a solar cell element can be improved. The above and other objects, features, and advantages of the present invention will become more apparent from the understanding of the appended claims appended claims [Embodiment] First, a composition for forming a P-type diffusion layer of the present invention will be described. Next, a method for producing a 卩-type solar cell element using a composition for forming a P-type diffusion layer will be described. In this specification, the term "process" means not only that the independent step 'is also included in the case where it cannot be clearly distinguished from other steps, and if the step can achieve the intended effect, it also includes I. Further, in the present specification, "~" indicates a range in which the value of the money is included as the minimum value and the maximum value, respectively. Further, in the case of η, when the amount of each component in the composition is present, when there is a substance corresponding to each component in the composition, the plurality of substances present in the composition are not described. In total, the composition for forming the p-type diffusion layer of the present invention includes a powder (hereinafter, sometimes referred to as "glass-breaking powder"), and two chemistries, and further considers coating properties, and may optionally contain other Additive 0 201214528 _ Here, the composition forming the P-type diffusion layer means that the receptor element is contained, and the receptor element can be shouted by, for example, (4) God substrate on the substrate (calcining/sintering). Scattered into p _ scattered layer of material. By using the composition for forming a P-type diffusion layer of the present invention, the formation step and the formation step of the P-type diffusion layer can be separated, thereby expanding the selection of the electrode material for forming the ohmic contact, and further expanding The selection of the electrode structure is reversed. For example, if a low-resistance material is used for the electrode, a low resistance can be achieved with a thin film thickness. Further, the electrode does not need to be formed on the entire surface, and the comb electrode may be partially formed in the shape of a comb or the like. By forming a partial shape such as a film or a comb shape as described above, it is possible to form a P-type diffusion layer while suppressing the internal stress in the ruthenium substrate and the occurrence of warpage of the substrate. y Therefore, if the composition for forming a P-type diffusion layer of the present invention is applied, the generation of internal stress generated in the substrate and the warpage of the substrate in the previously widely used method are suppressed, and the previously widely used methods are as follows: The two pastes are printed, and then satin-fired, and a method of obtaining an ohmic contact while making the n-type diffusion layer into a p+-type diffusion layer. Further, since the acceptor component in the glass powder is hardly sublimated during calcination, it is suppressed that the p-type diffusion layer is formed outside the desired region due to the generation of volatile gas. The reason for this is considered to be that, for example, the acceptor component is bound to an element in the glass powder or introduced into the glass bottle, so that it is difficult to volatilize. Further, the content ratio of the acceptor element-containing substance in the glass powder contained in the crude composition for forming the P-type diffusion layer of the present invention is from i.e., 2012 to 52,940% or more to 90% by mass or less. Thereby, the surface resistance value is lowered as the performance of the solar cell element can be improved. The details of the substance containing the acceptor element will be described later. The glass powder containing the acceptor element of the present invention will be described in detail. The term "receptor element" means an element which can form a p-type diffusion layer by doping it in a germanium substrate. The element of Group 13 can be used as the acceptor element, and examples thereof include B (deletion), Ai (sho), and (marriage). Examples of the acceptor element-containing substance for introducing the acceptor element into the glass powder include &amp; 〇3, Al2〇3, and Ga203, and preferably selected from the group consisting of B2O3, Al2〇3, and Ga2〇3. At least one of them. Further, the glass powder containing the acceptor element may be adjusted in composition ratio as needed, thereby controlling the melting temperature, the softening temperature, the glass transition temperature, the chemical durability, and the like. It is preferable to further contain the glass component substance described below. Examples of the glass constituent component include SiO 2 , K 20 , Na 20 , and Li 20 .

BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, T120, V205, SnO, Zr02, Mo03, La203, Nb205, Ta205, Y203, Ti02, Ge02, Te02 and Lu203, etc., preferably selected from the group consisting of SiO2 At least one of K20, Na20, Li20, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, T120, SnO, Zr〇2, and Mo03. Specific examples of the glass powder containing the acceptor element include both the above-mentioned acceptor element-containing substance and the above-mentioned glass component substance, and examples thereof include a B2〇rSiO 2 system (a substance containing an acceptor element-a glass component substance). In the order, the following is the same), B2〇3-ZnO system, B203-Pb0 system, B2〇3 single system, etc., including b2〇3 as a substance containing an acceptor element

In the system of 201214528 L, the Al203-Si02 system includes a system in which A1203 is a substance containing an acceptor element, and a Ga2〇3_Si〇2 system or the like contains a glass powder such as Ga203 as a system containing a substance of a receptor element. Further, it may be a glass powder containing two or more kinds of substances containing an acceptor element, such as an Al2〇3~B2〇3 system or a Ga2〇3_B2〇3 system. In the above, a glass containing one component or a composite glass containing two components is exemplified, but a glass powder containing three or more components such as a B20rSiO 2 -Na20 system may be used. Further, the glass powder may be adjusted in composition ratio as needed, thereby controlling the melting temperature, the softening temperature, the glass transition temperature, the chemical durability, and the like. In consideration of the doping concentration of the acceptor element in the ruthenium substrate, the melting temperature, the softening temperature, the glass transition temperature, and the chemical durability of the glass powder, the content ratio of the substance containing the acceptor element in the glass powder is 1% by mass or more. 90 mass ° / ❶ below. When the content ratio of the acceptor element-containing substance in the glass powder is less than 1% by mass, the doping concentration of the acceptor element in the tantalum substrate is too low, and the p-type sacrificial layer is not sufficiently formed. Further, when the content ratio of the substance containing the acceptor element is more than 90% by mass, the substance containing the acceptor element volatilizes in the thermal diffusion, so that the diffusion of the acceptor element also reaches the side surface and the back surface only forms on the surface. The p-type diffusion layer may have a p-type diffusion layer formed on the back surface and the back surface other than the desired portion. Further, the content ratio of the substance containing the acceptor element in the glass powder is preferably 2% by mass or more and 80% by mass or less, more preferably 1% by mass or more and 70% by mass or less. In particular, in consideration of the following two aspects, the content ratio of the substance f containing the A element in the glass powder is more preferably 30% by mass or more and 7 Å by mass. Hereinafter, the above two aspects are even Fully form p. The distribution of the layer? The amount of halogen is '-the composition of the P-type diffusion layer; the upper and lower acceptor elements, the sheet resistance of the surface of the formed p-type diffusion layer does not fall below the set value; And the effect of volatilization of substances that must contain steroidal elements. In addition, the content ratio of the glass component in the glass powder is preferably considered to be the ship temperature, the softening temperature, the glass lion temperature, and the chemical resistance =, and is suitably set to be - generally, 1 G mass% or more to 99. The mass is 1% or less, more preferably 2 G% by mass or more and 98% by mass or less, and further preferably 30% by mass or more and 9% by mass or less. Specifically, when it is a B2〇3-Si〇2 system glass, the content ratio of B2〇3 is preferably from 1% by mass or more to 9% by volume, more preferably from 〇/〇 to 80% by mass. The softening temperature of the glass powder is preferably 2 〇 (rc 〜 i 〇〇〇 t &gt; c, more preferably 300 ° C to 900 ° C from the viewpoint of the diffusibility at the time of the diffusion treatment and the dropping liquid (dn ppmg). Further, the softening temperature of the glass powder can be easily measured by a well-known differential thermal analyzer (DTA) or a peak. As the shape of the glass powder, a substantially spherical shape, a flat shape, a shape, and scales are mentioned. In view of the coating property or the uniform diffusion property of the substrate when the composition for forming the n-type diffusion layer is formed, it is generally spherical or flat in view of 201214528. The particle size of the glass powder is not particularly limited, and is preferably 100 μm or less. When a glass powder having a particle diameter of 1 μm or less is used, a smoother coating film is easily obtained. The particle size of the powder is more preferably 50 μm or less. Further, the particle diameter of the glass powder is more preferably 10 μm or less. Further, the lower limit is not particularly limited, but is preferably 〇1 μιη or more. The particle size of the glass indicates the average particle size' It is measured by a laser scattering diffraction method, a particle size distribution measuring apparatus, etc. The glass powder containing an acceptor element is produced by the following procedure. First, the raw material is weighed and The material of the crucible is exemplified by platinum, platinum-plated, ruthenium, alumina, quartz, carbon, etc., and may be appropriately selected in consideration of melting temperature, environment, reactivity with molten material, etc. Second, by electric furnace The melt is prepared by heating at a temperature corresponding to the glass composition. In this case, it is preferable to stir the melt uniformly.

Then, the melt obtained is allowed to flow out onto a graphite plate, a platinum plate, a ruthenium plate, a zirconia plate or the like to vitrify the melt. Q Finally, the glass is pulverized to form a powder. A known method such as a jet bead mill or a ball mill can be applied to the pulverization. The content ratio of the radical containing the acceptor element in the composition forming the P-type diffusion layer is determined in consideration of coatability and diffusibility of the acceptor element. In general, the composition of the P-type diffusion layer is preferably 0.1% by mass or more and 95% by mass or less, and preferably 12 201214528t 1% by mass or more and 90% by mass or less. It is preferably from 5% by weight to more than 85% by mass, particularly preferably from 2% by mass to 8% by mass. Next, the dispersion medium will be described. The dispersion medium refers to a medium in which the above glass powder is dispersed in the composition. (d) For the sake of the use of a mixture or a fresh solvent as a dispersion medium. As the binder, for example, polyvinyl alcohol, polyacrylamide, polyethylamine, polyethylene scale, polyethylene oxide, polyacid, __ silk, cellulose _, fiber can be suitably selected. Derivatives, methyl cellulose, ethyl cellulose, ethyl cellulose, gelatin, temple powder and starch derivatives, sodium alginate (s〇dium __), Sanxian gum

Uanthan), guar gum and guar derivatives, scleroglucan and scleroglucan, biological derivatives, yellow f-gel and yellow-transfer derivatives, dextrin and feminine derivatives, (meth)acrylic resin, (A Acrylic vinegar resin (for example, (meth)acrylic acid lysine, (mercapto) dimethyl decyl amide, etc.), butyl succinyl resin, red olefin resin, or copolymers thereof In addition, it is also suitable to select the recording of Linzhi. The charm can be used alone or in combination of two or more. The molecular weight of the agent is not particularly limited, and it is desirable that the cloud is appropriately adjusted as a desired viscosity as a composition. Examples of the agent include acetone, mercaptoethyl ketone, decyl _ tamin, methyl isopropyl ketone, decyl n-butyl fluorene, methyl-n-pentyl group, and methyl-n-hexyl fluorene. , diethyl g:, = keto di-isobutyl _, trimethyl hydrazine 'cyclohexanone, cyclohexane, methyl cyclohexanone 2,4-pentanedione, propyl propyl propyl ketone Solvent; Diethyl bond, A 13 201214528 base ethyl _, methyl-n-propion fluorene, di-iso _, tetragas σ fu rm, gamma tetrazole, di Yao, dimethyl di Wei, E Alcohol, ethylene glycol diethyl ether, ethylene glycol di-n-propyl ether, ethylene glycol dibutyl ether, diethylene glycol dimethoate, diethylene glycol diethylene, diethylene glycol methyl Keel, diethylene glycol methyl-n-propyl ether, diethylene glycol methyl-n-butyl ether, diethylene glycol di-n-propyl ether, diethylene glycol di-n-butyl ether, diethylene glycol methyl _ n-Hexyl Ether, Triethylene glycol dimethyl ether, Diethylene glycol diethyl ether, Triethylene glycol methyl ethyl ether, Triethylene glycol methyl-n-butyl ether, Triethylene glycol di-n-butyl ether, Triethylene glycol methyl hexyl ether, tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, tetra-diethylene glycol methyl Base, tetraethylene glycol methyl-positive, diethylene glycol di-positive, tetraethylene glycol methyl-positive, tetraethylene glycol di-positive, propylene glycol dimethyl, propanol B, propylene glycol II positive test, propylene glycol dibutyl, dipropylene glycol = methyl ether, dipropylene glycol diethyl ether, dipropylene glycol methyl ethyl, dipropylene glycol decyl-n-butyl ether, dipropylene glycol di-n-propyl ether, Dipropylene glycol di-n-butyl ether, dipropylene glycol methyl-n-hexyl ether, tripropylene glycol dimethyl ether, tripropylene glycol diether, tripropylene glycol methyl ethyl ether, tripropylene glycol methyl-n-butyl ether, tripropylene glycol di-positive Butyl ether, tripropylene glycol decyl-n-hexyl ether, tetrapropylene glycol dioxime ether, tetrapropylene glycol diethyl ether, tetra-dipropylene glycol methyl ethyl ether, tetrapropylene glycol decyl-n-butyl ether, dipropylene glycol di-n-butyl ether, four An ether solvent such as propylene glycol methyl-n-hexyl ether or tetrapropylene glycol di-n-butyl ether; decyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, acetic acid second Butyl ester, n-amyl acetate, second amyl acetate, 3·methoxybutyl acetate, mercaptoacetate Ester, 2-ethyl butyl acetate, 2-ethylhexyl acetate, 2-(2-butoxyethoxy)ethyl acetate, benzyl acetate, cyclohexyl acetate, hydrazine acetate 201214528 Cyclohexyl ester , decyl acetate, acetonitrile acetate, ethyl acetate, diethylene glycol oxime ether, diethylene glycol monoethyl ether, diethylene glycol acetate _ n-butyl ether, dipropylene glycol oxime ether, acetic acid Dipropylene glycol ethyl ether, ethylene glycol diacetate, ethoxy triethylene glycol acetate, ethyl propionate, n-butyl propionate, isoamyl propionate, diethyl oxalate, di-n-butyl oxalate , decyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, ethylene glycol oxime ether propionate, ethylene glycol ethyl ether propionate, ethylene glycol oxime ether acetate, ethylene glycol ethyl ether Acid ester, diethylene glycol oxime ether acetate, diethylene glycol diethyl ether acetate, diethylene glycol-n-butyl ether acetate, propylene glycol oxime ether acetate, propylene glycol diethyl ether acetate, propylene glycol propyl Ester acetate, dipropylene glycol oxime ether acetate, dipropylene glycol diethyl ether acetate, γ-butyrolactone, γ-valerolactone and other ester solvents; acetonitrile, hydrazine-hydrazinopyrrole , Ν-ethylpyrrolidone, Ν-propylpyrrolidone, Ν-butylpyrrolidone, Ν-hexylpyrrolidone, Ν-cyclohexylpyrrolidone, hydrazine, hydrazine-dimethylformamide, hydrazine, hydrazine- An aprotic polar solvent such as dimercaptoacetamide or dimercaptosulfoxide; decyl alcohol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, second butanol, third butanol, N-pentanol, isoamyl alcohol, 2-mercaptobutanol, second pentanol, third pentanol, 3-decyloxybutanol, n-hexanol, 2-mercaptopentanol, second hexanol, 2- Ethyl butanol, second heptanol, n-octanol, 2-ethylhexanol, second octanol, n-nonanol, n-nonanol, second-undecanol, tridecyl decyl alcohol, second Tetradecane, second-heptadecanol, phenol, cyclohexanol, methylcyclohexanol, benzyl alcohol, ethylene glycol, 1,2-propanediol, 1,3-butanediol, diethylene glycol, two An alcohol solvent such as propylene glycol, triethylene glycol or tripropylene glycol; ethylene glycol oxime ether, ethylene glycol ether, ethylene glycol monophenyl ether, diethylene glycol monoterpene ether, diethylene glycol monoethyl ether, diethylene glycol Alcohol mono-n-butyl ether, diethylene glycol mono-n-hexyl ether, ethoxy 15

201214528 ww «X triethylene glycol, tetraethylene glycol mono-positive top, propylene glycol monoterpene, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl &amp;|, tripropylene glycol monoterpene glycol single shrine solvent; Baked, α-alcoholic alcohol, thinning of bay laurel oil, allo-ocimene, lemon, dipentene, α-blockene, ρ-masked woman, terpineol (terpineol), fragrant ketone, and ocimene , a solvent such as water gerene; water. These may be used alone or in combination of two or more. When the composition for forming the n-type diffusion layer is formed, from the viewpoint of coatability of the substrate, α-terpineol, diethylene glycol mono-n-butyl ether, and 2-(2-butyl acetate) are preferred. Oxyethoxyethyl)ethyl ester. The content ratio of the dispersion medium in the composition forming the ruthenium diffusion layer is determined in consideration of coatability and acceptor concentration. The viscosity of the composition forming the ruthenium diffusion layer is preferably from 10 mPa·s or more to loooooo mPa.s or less, more preferably from 5 〇 mpa S or more to 500,000 mPa·s or less, in view of coatability. Next, a method of manufacturing the P-type diffusion layer and the solar cell element of the present invention will be described. First, an alkaline solution is applied to a tantalum substrate as a P-type semiconductor substrate to remove the damaged layer, and a texture structure is obtained by surname. Specifically, the damaged layer of the crucible surface generated by slicing from the ingot was removed using 20% by mass of caustic soda. Then, it is etched by a mixture of 丨% by mass of caustic soda and 10% by mass of isopropyl alcohol to form a texture structure. 70 solar cells are formed on the light-receiving surface (surface) side to promote optical confinement effects. High efficiency. Next, the treatment was carried out for several tens of minutes at 800 ° C to 900 ° C in a mixed gas of phosphorus oxychloride (POC13), nitrogen gas and oxygen gas in the environment of 201214528 to form an n-type diffusion layer in the same manner. At this time, in the method using the oxygenated phosphorus environment, the diffusion also reaches the side surface and the back surface. The n-type diffusion layer is formed not only on the surface but also on the side surface and the back surface. Therefore, side etching is performed in order to remove the n-type diffusion layer on the side. Then, the composition for forming the p-type diffusion layer is applied onto the back surface of the p-type semiconductor substrate, i.e., the n-type diffusion layer which is not the surface of the light-receiving surface. In the present invention, the coating method is not limited, and examples thereof include a printing method, a spin coating method, a brush coating method, a spray method, a doctor blade method, a roll coater method, and an ink jet method. The coating amount of the composition for forming the ruthenium-type diffusion layer is not particularly limited. For example, the amount of the glass powder can be set to 001 g/m 2 to 100 g/m 2 , preferably 0.1 g/m 2 to 1 〇 g/m 2 . Further, depending on the composition of the composition forming the p-type diffusion layer, a drying step for volatilizing the solvent contained in the composition after coating may be provided. In this case, at 8 (TC~30 (at a temperature of about TC, when using a hot plate, it is dried for 1 minute to 10 minutes, and when using a dryer or the like, it is dried for about 1 minute to 30 minutes. The drying condition depends on The doping of the composition forming the n-type diffusion layer is not limited to the above conditions in the present invention. The semiconducting of the composition of the above-described "p-type diffusion layer" is applied at 600 ° C to 12 _ The H substrate is subjected to thermal diffusion treatment. The (4) thermal diffusion treatment causes the acceptor element to diffuse into the semiconductor substrate to form a 〆-type diffusion layer. The thermal diffusion treatment can be applied to a known continuous furnace, a batch furnace, etc. In addition, thermal diffusion treatment The furnace environment in the furnace may be appropriately adjusted to air, oxygen, etc. 17 201214528 The heat diffusion treatment time may be appropriately selected in accordance with the content of the acceptor element contained in the composition forming the p-type diffusion layer. For example, it may be set. It is from 1 minute to 60 minutes, more preferably from 2 minutes to 30 minutes. ° Since a glass layer is formed on the surface of the formed P-type diffusion layer, the glass layer is removed by button etching, and the layer can be broken. a method in an acid such as hydrofluoric acid, A well-known method such as a method of immersing caustic scales. In addition, in the prior manufacturing method, an aluminum paste is printed on the back side, and then, yttrium is performed to convert the η-stacking layer into a p+S layer while obtaining an ohmic contact. However, the aluminum layer formed of the aluminum paste has a low electrical conductivity, and in order to reduce the sheet resistance, the aluminum layer usually formed on the entire back surface must have a thickness of about 10 μm to 20 μm after calcination. The formation of a thicker IS layer, the lion's expansion of the material and the (four) thermal expansion coefficient differ greatly, so in the process of satin burning and cooling, a large internal stress is generated in the Shixi substrate, which becomes the cause of warpage. ▲The internal stress causes damage to the crystal grain boundary of the crystal, and the power loss increases. The warpage of the solar cell element in the module process or the copper called the tab wire is also caused. In the process of connecting the wires, the solar cell elements are easily damaged. In recent years, due to the improvement of the slicing technology, the thickness of the germanium substrate is being thinned, and the solar cell elements are more likely to be broken. However, according to the manufacturing method of the present invention, after the n-type diffusion layer is converted into the p + -type diffusion layer by the composition for forming a P-type diffusion layer of the present invention described above, an electrode is additionally provided on the p + -type diffusion layer. Therefore, the material of the electrode for the back surface is not limited to aluminum, and for example, Ag (silver) or Cu (copper) can be applied. 201214528 r ·- »·•一一· ^ A. The former thickness is formed thinner and additionally does not need to be formed on the entire surface. Therefore, internal stress and warpage in the tantalum substrate generated during the calcination and cooling can be reduced. On the n-type diffusion layer formed as described above An antireflection film is formed. The antireflection film is formed by using a well-known technique. For example, when the antireflection film is a tantalum nitride film, plasma chemical vapor deposition by using a mixed gas of SiH4 and helium 3 as a raw material (Chemical Vapor) Deposition, CVD) method is formed. At this time, hydrogen diffuses in the crystal, does not participate in the orbital of the bond of the ruthenium atom, that is, the dangling bond is hydrogen-bonded, and the defect is passivated (hydrogen passivation). More specifically, the pressure of the reaction gas in the mixed gas flow rate ratio 〇〇5 to 1.0' is 〇.1 Torr to 2 Torr, the temperature at the time of film formation is 300C to 55CTC, and the frequency of plasma discharge is 1〇〇. Formed under conditions of kHz or higher. On the antireflection film of the surface (light-receiving surface), the surface electrode metal paste was printed by screen printing and dried to form a surface electrode. The metal paste for a surface electrode contains metal particles and glass particles as a necessary tool, and if necessary, a resin binder, other additives, and the like. Then, a back surface electrode is also formed on the P + -type diffusion layer on the back surface. As described above, the material or formation method of the back surface electrode in the present invention is not particularly limited. For example, a metal paste containing aluminum, silver or copper may be applied and dried to form a back electrode. At this time, the connection between the solar cell elements can also be used to signal the silver electrode on a part of the back surface. The above electrode was calcined to prepare a solar cell element. If it is baked for a few seconds to a few minutes in the range of 600 ΐ 201214528. ι^/χχ to 900 °c, the antireflection film as an insulating film is melted on the surface side by the glass particles contained in the metal paste for the electrode. Further, a part of the surface of the crucible is also melted, and metal particles (for example, silver particles) in the paste form a contact portion with the crucible substrate and solidify. Thereby, the formed surface electrode and the germanium substrate are electrically connected. This is called firethrough. The shape of the surface electrode will be described. The surface electrode is composed of a bus bar electrode and a finger electrode that intersects the bus bar electrode. Such a surface electrode can be formed by, for example, screen printing of the above-mentioned metal paste, or application of an electrode material, or an electron beam-heated electrode material of a high-vacuum towel. It is known that the surface electrode including the hidden electrode and the finger electrode is generally used as an electrode on the light-receiving surface side, and a known forming method of the bus bar electrode and the finger electrode on the light-receiving surface side can be applied. Further, in the above-described p-type diffusion layer and method for producing a solar cell element, in order to form a type 11 diffusion layer on a germanium substrate as a P-type semiconductor substrate, a mixture of oxygenated phosphorus (P0C13), nitrogen gas and oxygen gas is used. Gas 7 However, a composition forming an n-type diffusion layer may also be used to form an n-type layer. The composition forming the n-type diffusion layer contains an element of group 15 such as ρ (phosphorus) or ytterbium (锑) as a donor (d〇n〇r) element. In the method of forming a composition for forming an n-type diffusion layer for an n-type diffusion layer, first, a composition for forming an η-dispersion layer is applied to a light-receiving surface of a surface of a bismuth-type semiconductor substrate, and the present invention is coated on the back surface. The formation of the Ρ-type diffusion layer, the new _. (:~1·Χ: thermal diffusion treatment is carried out. By this thermal diffusion treatment, the donor element diffuses into the p-type semiconductor substrate to form an n-type diffusion layer, and the acceptor element is formed on the back surface diffusion 20 201214528 a p+ type diffusion layer. In addition to the steps, the steps are to fabricate a solar cell element. The above is the same as that of the above-mentioned 100225, and the entire contents of this application are hereby incorporated by reference. All the document specifications described in this specification are the same as those of the specific and individual cases, and the technical reference = two domain specifications. By reference, [example] The outline is issued _#, but the invention is not restricted by the 〇海&quot;ik. In addition, the mouth is also a gentleman.] Dan has, without special description, the chemical is used For the reagents, "%" means "% by mass" as long as it is not in advance. [Example 1] The particle shape is approximately spherical using an automatic milk spider kneading device, and the average particle diameter is 3.! μιη 'Softening temperature is 4 machine secret 2 system glass (B2〇3: 10%) powder 2 g is mixed with 3 g of ethyl cellulose and 77 g of 2 (butoxyethoxy)ethyl acetate, and is paste-formed to obtain a composition for forming a p-type diffusion layer. Further, the shape of the glass particles is Hitachi. The TM_1〇〇〇 scanning electron microscope manufactured by Hitachi High-Technologies (shares) was observed and judged. The average particle size of the glass was used.

It was calculated by a ls 13 320 laser scattering diffraction particle size distribution measuring apparatus (measuring wavelength: 632 nm) manufactured by Beckman Coulter Co., Ltd. Glass 201214528 The softening point of the glass is obtained by using the dtg_6〇h type differential heat/thermal weight synchronous measuring device manufactured by Shimadzu Corporation (share), based on the differential heat (DTA) curve. Then, the prepared paste was applied to the surface of the p-type slab substrate by screen printing and dried on a hot plate at 150 ° C for 5 minutes. Then, heat diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C, and then, in order to remove the glass layer, the substrate was immersed in hydrofluoric acid for 5 minutes, and then washed with running water, followed by drying. The sheet resistance of the surface coated with the side on which the composition of the p-type diffusion layer was formed was 90 Ω/□, and B (boron) was diffused to form a p-type diffusion layer. The sheet resistance of the back surface was 1,000,000 Ω/□ or more and could not be measured, and it was judged that the P-type diffusion layer was not substantially formed. In addition, warpage of the substrate did not occur. Further, the sheet resistance was measured by a four-probe method using a L〇resta-EP MCP-T360 type low resistivity meter manufactured by Mitsubishi Chemical Corporation. [Example 2] A p-type diffusion layer was formed in the same manner as in Example i except that the thermal diffusion treatment time was set to 2 Torr. The sheet resistance of the surface coated with the side on which the p-type diffusion layer was formed was 87 Ω/□, and B (collar) was diffused to form a P-type diffusion layer. The sheet resistance on the back side was 1000 Ω/□ or more, and it was impossible to measure the sag type (4). In addition, the substrate _ song was not produced. [Example 3] In addition to setting the time of the thermal diffusion treatment to 3Q minutes, a p-type was formed in the same manner as in Example 22 201214528, in which a Ρ-type diffusion layer was formed, 79 Ω/c], and Β (shed) was diffused and 1 was used. Diffusion layer. The sheet resistance of the surface on the side of the composition is such that a Ρ-type diffusion layer is formed. On the other hand, the sheet resistance of the back surface was 1 〇〇〇〇〇〇 Ω/□ or more, and the helmet judged that the (four) diffusion layer was not substantially formed. In addition, the i-substrate is not produced. [Example 4] The glass powder was replaced with a B2〇3_si〇2 system glass powder having a particle shape of a substantially spherical shape and an average particle diameter of 曰μιη 'softening temperature of 5 i 5 (secret 3 3, · 30%)' The composition forming the P ^L diffusion layer was prepared 'in the same manner as in Example i' and the composition forming the p-dragon layer was formed into a P-type diffusion layer. The four sheets of the surface coated with the side on which the composition forming the p-type diffusion layer was applied had a resistance of 77 Ω/□ 'B (the diffusion was formed to form a p-type diffusion, and the sheet resistance of the back surface was 1 〇〇〇〇〇. () Ω/□ or more and no measurement> It was judged that the 卩-type diffusion layer was not substantially formed. Further, no distortion of the substrate was produced. [Example 5] The glass powder was replaced with a particle shape of a substantially spherical shape, and an average particle diameter was obtained. To soften the ▲ degree of 6〇5. The B2〇3_Si〇2 system glass powder of 〇(Β2〇3 containing 篁.5G%) 'except this' is prepared in the same manner as the example Ρ, forming the Ρ, the composition of the diffusion layer And using the composition forming the p-type diffusion layer to form a 扩散-type diffusion layer. The sheet resistance of the surface coated with the side of the composition forming the p-type diffusion layer is 74 Ω/α, Β (boron) diffusion On the other hand, the sheet resistance of the p-type diffusion 23 was 201214528. On the other hand, the sheet resistance of the back surface was 1,000,000 Ω/□ or more and could not be measured. It was judged that the Ρ-type diffusion layer was not substantially formed. Further, the embossing of the substrate was not produced. 6] Replace the glass powder with a particle shape of approximately spherical shape, and the average particle size is 3 · 1 μ Π1 'The glass powder of Β2〇3-Si02 system having a softening temperature of 644 ° C (β 2 〇 3 content: 60%)' was prepared, and a composition for forming a P-type diffusion layer was prepared and used in the same manner as in Example i. The composition forming the p-type diffusion layer forms a P-type diffusion layer. The sheet resistance of the surface coated with the side on which the p-type diffusion layer is formed is 76 Ω/□, and B (boron) is diffused to form a p-type diffusion layer. On the other hand, the sheet resistance of the back surface was 1,000,000 Ω/□ or more, and it was judged that the p-type diffusion layer was not formed substantially. Further, the buckling of the substrate was not produced. [Example 7] The glass powder was replaced with a particle shape. B203-SiO2 system glass powder (B2〇3 content: 70%) having a substantially spherical shape and an average particle diameter of 3.1 μm 'softening temperature of 7〇2 ° C' was prepared in the same manner as in Example i. A composition of the P-type diffusion layer, and a P-type diffusion layer is formed using the composition forming the p-type diffusion layer. The sheet resistance of the surface coated with the side of the composition forming the p-type diffusion layer is 72 Ω/□, B (Bon) diffuses to form a p-type diffusion layer. The electric resistance was 1 〇〇〇〇〇〇 Ω / □ or more and no 24 was measured by the 201214528 method. It was judged that the p-type diffusion layer was not substantially formed. Further, the substrate was not observed. [Example 8] The glass powder was replaced with particles. The shape is a substantially spherical shape, and the average particle diameter is 3.ljim' softening temperature of 775&lt;t B2〇rSi〇2 system glass powder (b2〇3 content: 85%) 'other than' in the same manner as the example A composition for forming a P-type diffusion layer is prepared, and a P-type diffusion layer is formed using a composition which is a p-type diffusion layer. The sheet resistance of the surface coated with the side of the subtractive material forming the 卩-type diffusion layer was 75 Ω/□, and B (boron) was diffused to form a p-type diffusion layer. On the other hand, the sheet resistance of the back surface was 1 〇〇〇〇〇〇 Ω/□ or more and could not be measured, and it was judged that the ruthenium-type diffusion layer was not substantially formed. In addition, the embossing of the substrate was not produced. [Example 9] The glass powder was replaced with a B2〇rZn〇 system glass powder (β2〇3 content: 10%) having a particle shape of a substantially spherical shape, an average particle diameter of 3.1 μm, and a softening temperature of 505 ° C. A composition for forming a ruthenium-type diffusion layer was prepared in the same manner as in Example 1, and a composition for forming a p-type diffusion layer was used to form a ruthenium-type diffusion layer. The sheet resistance of the surface coated with the side on which the composition of the p-type diffusion layer was formed was 88 Ω/□, and Β (boron) was diffused to form a p-type diffusion layer. On the other hand, the sheet resistance of the back surface was 1 〇〇〇〇〇〇 Ω/□ or more and could not be measured. It was judged that the ruthenium-type diffusion layer was not substantially formed. In addition, no surface curvature of the substrate was produced. 25

201214528 ▲ L

[Example ίο] The glass powder was replaced with a ring-shaped system glass powder (b2〇3 3 amount: 4 G%) having a particle shape of a substantially spherical shape and an average particle diameter of 3 into 1 哗 'temperature of 559 ° C. In the same manner as the real m, a composition for forming an expanded product 'and using the p-type diffusion layer was formed. 4 sheets of electric (four) 68 Ω / port which were coated with the side of the composition forming the P-type diffusion layer. B (rot) spreads to form a P-type diffusion shield. On the other hand, the sheet resistance of the back surface was 1,000,000 Ω/□ or more and could not be measured, and it was judged that the P-type diffusion layer was not formed on the dragon. In addition, no distortion of the substrate occurred. [Example 11] Using an automatic milk spider to knead the skirt, the secret 3 glass system (B203 content: 1%) powder 19.7g with her g, ethyl cellulose 〇.3g, acetic acid 2-(2·butoxy Ethoxy)acetic acid 7 § was mixed and pasteified to form a composition for forming a p-type diffusion layer. Thereafter, the same operation as the example U is performed. As a result, there is no deposit of glass on the cleaned substrate, and the adherend has been easily removed. Further, the sheet resistance of the surface was 8 5 Ω/□, and it was judged that the ruthenium-type diffusion layer was not substantially formed on the back surface. In addition, no distortion of the substrate occurred. [Comparative Example 1] The glass powder was replaced with a particle shape of a substantially spherical shape, and the average particle diameter was 3.! A softening temperature of 4 papers of the secret 〇 2 system glass powder (. content: 〇 · 5%) Otherwise, the composition of the p-type diffusion layer was prepared in the same manner as in Example 1, and the composition of the p-type diffusion layer was subjected to thermal expansion. The sheet resistance of the surface on the side on which the composition forming the p-branching layer was applied was 1 _ Ω / □ or more, and it was judged that the p-type diffusion layer was not substantially formed. [Comparative Example 2] The glass powder was replaced with a B2〇rSi〇2 system glass powder (β2〇3 content: 95%) having a particle shape of a substantially spherical shape and an average particle diameter of 805 ° C. A composition 'forming a P-type diffusion layer' was prepared in the same manner as in Example i and subjected to thermal diffusion treatment using the composition forming the p-type diffusion layer. The sheet resistance of the surface coated with the side on which the p-type diffusion layer was formed was 70 Ω/□, and B (boron) was diffused to form a p-type diffusion layer. However, the sheet resistance of the back surface was 123, and a diffusion layer was formed on the back surface. While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Simple description of the diagram] None [Key component symbol description] None 27

Claims (1)

201214528 VII. Patent application scope: 1. A composition for forming a p-type diffusion layer, comprising: a glass powder containing an acceptor element; and a dispersion medium, the above glass powder including a substance containing an acceptor element and a glass μ In the above-mentioned powder, the ratio of the substance containing the acceptor element is 1% by mass or more to 9% by mass or less. J·:. The group forming the p-type diffusion layer described in the first aspect of the patent range m I is at least one selected from the group consisting of Β (烂), A1 (Ga), and Ga (gallium). The stalk powder comprising the above-mentioned acceptor element in the group ' forming a p-type diffusion layer according to Item 1 of the 5th patent range includes: selected from the group consisting of B2〇3, 丨2丨3, and 〇&2 At least one substance containing an acceptor element in 〇3; and selected from the group consisting of Si〇2, κ20, Na2〇, Li2〇, Ba〇, Sr〇, Ca〇, MgO, BeO, Zn0, Pb〇, Cd〇, Tl2 At least one glass component substance of cerium, Sn 〇, Zr 〇 2, and Mo 〇 3 . A method for producing a p-type diffusion layer, comprising: a step of coating a composition for forming a P-type diffusion layer as described in any one of claims 1 to 3; and performing thermal diffusion The steps of processing. 5. A method of manufacturing a solar cell element, comprising the steps of: coating a composition of a p-type diffusion layer as described in any one of claims 1-4 to 3 of the invention. 28 201214528 A step of performing a thermal diffusion process to form a P-type diffusion layer; and a step of forming an electrode on the P-type diffusion layer formed. 29 201214528 IV. Designation of representative drawings: (1) The representative representative of the case is: No (2) The symbol of the symbol of the representative figure is simple: No. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: None 201214528 Revision date: June 17, 100 is the 100114095 Chinese manual, no scribe correction page invention patent specification (this specification format, order and bold type, please do not change it, please do not fill in the ※ part) &gt;^ 2006.011 U006.013 ※Application number: ※Application period: Classification: 1. Invention name: (Chinese/English) Composition for forming P-type diffusion layer, method for producing p-type diffusion layer, and method for manufacturing solar cell element COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD FOR FORMING P-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL ELEMENT II. Abstract of Chinese Invention: A composition for forming a P-type diffusion layer, which comprises a glass powder containing an acceptor element And dispersion media. The above glass powder includes a substance containing a receptor element and a glass component substance. The content ratio of the above-mentioned acceptor element-containing substance in the glass powder is 1% by mass or more and 90% by mass or less. The composition for forming the P-type diffusion layer is applied and subjected to thermal diffusion treatment, whereby a P-type diffusion layer and a solar cell element having a P-type diffusion layer are produced. The composition of forming p-type diffusion layer contains an acceptor element-containing glass powder and a dispersion medium. The acceptor element-containing glass powder contains an acceptor element-containing material and 201214528 Revision date: 100 years 6 According to the present invention, in the manufacturing process of the solar cell element using the ruthenium substrate, the internal stress in the ruthenium substrate and the warpage of the substrate can be suppressed, and A V-type diffusion layer is formed. In the range of the content ratio of the substance containing the acceptor element of the invention, the surface resistance value is lowered, and the performance as a solar cell element can be improved. The above and other (four) features, advantages and advantages of the present invention will become more apparent from the following detailed description. [Embodiment] First, a composition for forming a p-type diffusion layer of the present invention will be described. Next, a method for producing a ruthenium diffusion layer using a composition for forming a ruthenium diffusion layer and a solar cell element will be described. a Further, in this specification, the step of "the process" is not included in the steps that cannot be clearly combined with other steps; if the step can achieve the desired effect, It is also included. In addition, in the present specification, "~" means a range in which the ί value described as the minimum value and the maximum value are respectively included. Further, in the case where the amount of each component of the composition towel is present, when the composition f describes the object f of each component, it is not necessary to have a specific composition in advance. The total amount of the plurality of substances present. - #Μ + month The composition of the p-type diffusion layer includes at least two receptors: two: = two:; Cloth, may also contain other additions as needed 201214528 Revision date: June 17, 100 is the 100114095 Chinese manual no line correction page here, (9) forming a p-type diffusion layer composition, refers to the inclusion of receptors For example, after being applied to a stencil, a thermal diffusion treatment is performed (forging the ( 碰 碰 ( ( ( 。 。 。 。 。 。 。 。 。 。 。 。 。. By using the composition of the present invention to form a P-type diffusion layer, can be divided into The formation step of the type diffusion layer and the formation step of the formation layer are from the selection of the electrode material forming the ohmic contact, and further expanding the structure of the electrode. For example, if the low plant material such as silver is used, The thin film thickness achieves a low resistance. In addition, the electrode is also formed into two faces. The comb type and the electrode may be partially formed in the shape of a comb shape, etc. The shape of the film may be formed by a shape such as a U. The internal stress in the substrate is suppressed, and the substrate is formed into a P-type diffusion layer. The surface shape = if the composition forming the P-type diffusion layer of the present invention is applied to the inside of the substrate which is previously widely used in the method. The previously widely used methods of cream should be: Brush ί ..., after / /, calcination, and the method of obtaining ohmic contact while making the n-type diffusion layer into ρ + type. 曰 曰 : : 朗 朗 朗 朗 朗 朗 粉末 粉末 粉末 粉末 粉末 粉末 粉末 粉末 粉末 粉末 粉末 粉末 lm lm lm lm lm lm lm lm lm lm lm lm lm lm lm ) 'Therefore, the p-type diffusion layer is inhibited from the situation other than the volatile gas. The reason for this is considered to be that, for example, the acceptor is formed into a knife, the element of the glass powder t is bonded, or is guided to be so difficult to volatilize. In the sputum, the content ratio of the substance containing the acceptor element in the group glass powder forming the p-type diffusion layer of the present invention is 201214528, which is the first surface number, the Chinese manual, the sizing correction page, the correction period: (10), June 17 days or more to 90% by mass or less. #这, the surface resistance value decreases, and the performance as a solar cell element can be improved. The details of the substance containing the acceptor element will be described later. The glazed powder containing the acceptor element of the tree is described in detail. The term "receptor element" means an element which can form a p-type diffusion layer by being doped into a substrate. The element of Group 13 can be used as the acceptor element, and examples thereof include B (boron), A1 (aluminum), and Ga (gallium). 〇 As the substance containing the acceptor element for introducing the acceptor element into the glass powder, b2o3, ai2〇3, and Ga2〇3 are exemplified, and at least one selected from the group consisting of B2O3, AI2O3, and Ga203 is preferably used. . Further, the glass powder containing the acceptor element may adjust the composition ratio as needed, and control the melting temperature, the softening temperature, the glass transition temperature, the chemical durability, and the like. It is preferable to further contain the glass component substance described below. Examples of the glass constituent component include Si〇2, K2〇, 2〇, BaO, SrO, CaO, MgO, BeO, ΖηΟ, PbO, CdO, Tl2〇, V2〇5, SnO, Zr02, Mo03, and La2. 〇3, Nb205, Ta205, Y2〇3, ❹Ti〇2, Ge02, Te02 and Lu203, etc., preferably selected from the group consisting of Si〇2, K20, Na20, Li20, BaO, SrO, CaO, MgO, BeO, ΖηΟ At least one of PbO, CdO, T120, SnO, Zr02, and Mo03. Specific examples of the glass powder containing the acceptor element include a system including both the above-described acceptor element-containing substance and the above-described glass component substance. The B2〇rSi〇2 system (for a substance containing an acceptor element) The order of the glass component substances is the same as the following), the B2OrZnO system, the BzCVPbO system, the B2〇3 single system, etc., including the ugly 2〇3 as the containing receptor 9 201214528 is the ί〇0114〇95 Chinese manual without the sizing correction page correction Date: The system of the substance of the element on June 17, 100, the Al2〇3_Si〇2 system, etc., which contains Α12〇3 as a substance containing a receptor element. The Ga2〇3_SiO2 system contains Ga2〇3 as a receptor-containing element. A glass-filled powder of a material system or the like. Further, it may be a glass powder containing two or more kinds of substances containing an acceptor element, such as a Α12〇3_Β2〇3 system or a Ga2〇3-B2〇3 system. In the above, a glass containing one component or a composite glass containing two components is exemplified, but a glass powder containing three or more components, such as a B2〇3_Si〇2-Na2〇 system, may be used. For the outer glass, the powder can be visually written to adjust the composition ratio π~ melting temperature, softening temperature, glass transition temperature, chemical durability, and the like. Considering the doping concentration of the acceptor element in the ruthenium substrate, the glass powder has a melting temperature, a softening temperature, a glass transition temperature, and a chemical durability. The content ratio of the substance containing the acceptor element in the 7-wave powder is the factory greedy%. It is up to 90% by mass or less. When the glass powder contains the receptor element 1 mass. Full, acceptor element tree substrate transfer ratio is not $ The scattered layer is not a new job. Correction, when the ratio is more than 〇9% by mass, the content of the receptor contains: the volatilization of the substance, so that the diffusion of the acceptor element also reaches the P-type diffusion layer formed only on the surface, and Also formed a P (four) scattered layer of the New Zealand. In addition, the content of the substance containing the receptor in the glass powder is preferably 2% by mass or more and 8% by mass or more, and more preferably 70% by mass or less. More preferably, it is 10% by mass. 10 201214528 Revision date: June 17, 100 is the 100114095 Chinese manual. There is no scribe correction page invention patent specification (this manual format, order and bold type, please do not change, ※ mark (Please do not fill in) &gt;^2006.011 U006.013 ※Application number: ※Application deadline: Classification: 1. Invention name: (Chinese/English) Composition for forming P-type diffusion layer, method for manufacturing p-type diffusion layer And manufacturing method of solar cell element COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD FOR FORMING P-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL ELEMENT II. Abstract of Chinese Invention: A composition for forming a P-type diffusion layer, which comprises a glass powder containing an acceptor element And dispersion media. The above glass powder includes a substance containing a receptor element and a glass component substance. The content ratio of the above-mentioned acceptor element-containing substance in the glass powder is 1% by mass or more and 90% by mass or less. The composition for forming the P-type diffusion layer is applied and subjected to thermal diffusion treatment, whereby a P-type diffusion layer and a solar cell element having a P-type diffusion layer are produced. The composition of forming p-type diffusion layer contains an acceptor element-containing glass powder and a dispersion medium. The acceptor element-containing glass powder contains an acceptor element-containing material and 201214528 is the first ίοοί 14095 The specification has no scribe correction page. The date of correction is: 100 years June 17曰a glass component material. A content of the acceptor element-containing material is from 1% by mass to 90% by mass. A p-type diffusion, layer and a Photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.