TW201203323A - Manufacturing method of epitaxial substrate - Google Patents

Abstract

A manufacturing method of epitaxial substrate includes the following steps: first forming a patterned film on a substrate; continuing to form a first epitaxial layer; then using laser to destruct a preset region corresponding to the first epitaxial layer above the substrate, thereby forming a liquefied sacrificial layer between the first epitaxial layer and the substrate; then epitaxially forming a second epitaxial layer from the first epitaxial layer; subsequently etching and removing the patterned film to weaken the structure of the first epitaxial layer, so as to facilitate in etching and removing the first epitaxial film; and finally etching and removing the liquefied sacrificial layer to strip the substrate off the second epitaxial layer, thereby effectively improving the removal efficiency.

Description

201203323 VI. Description of the Invention: • Technical Field of the Invention The present invention relates to a semiconductor substrate, and more particularly to a method of manufacturing an epitaxial substrate. [Prior Art] • When manufacturing photovoltaic elements, the selected substrate often has disadvantages such as poor heat transfer capability. In order to balance the epitaxial quality and heat dissipation capability of the photovoltaic elements, a common process in the process of manufacturing components is common. The substrate is removed, for example, if the sapphire (sapPhire; chemical formula is ai2o3) substrate is peeled off, and then the heat transfer plate with high heat transfer coefficient is attached to facilitate the heat dissipation performance of the photovoltaic element. A common removal In the substrate mode, a first epitaxial film is disposed between the far substrate and a second epitaxial film, and the first epitaxial film is destroyed by wet etching (etching) to remove the first epitaxial film. Substrate. However, since the first epitaxial film structure is dense and complete, the buttoning efficiency is too low. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of fabricating an epitaxial substrate which can weaken the structure of the epitaxial film to improve substrate removal efficiency. Thus, the method for manufacturing an epitaxial substrate of the present invention comprises the following steps: first forming a patterned film layer on a substrate, and epitaxially forming a first epitaxial layer from the patterned film layer, and then, Destroying the first-small layer corresponding to the predetermined area above the substrate by using a laser, and forming a liquefied sacrificial layer to form an epitaxial layer from the first insect layer at the interface between the first insect layer and the substrate The second epitaxial layer is successively etched to remove the patterned film 201203323 layer to weaken the structure of the first epitaxial layer, and finally, the liquefied sacrificial film is removed by etching to remove the substrate from the second epitaxial layer The film is peeled off. The effect of the present invention is that the liquefied sacrificial layer is formed at the interface between the first epitaxial layer and the substrate, and the patterned film layer is removed, and the structure of the first epitaxial layer is weakened to facilitate etching removal. An epitaxial film effectively improves the removal efficiency. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. A first preferred embodiment of the method for fabricating a matte substrate of the present invention comprises the following steps: Referring to Figure 1, first, a patterned film layer 2 is formed on a substrate 1 such that the substrate 1 is exposed to a predetermined portion. The substrate 丨 includes a flat substrate surface 11 , and the convex pattern layer 2 is formed on a predetermined area on the substrate surface 11 , and the remaining portion is not covered by the patterned film layer 2 for Subsequent epitaxy. Further, the patterned film layer 2 is a regular strip pattern, and the total width of the patterned film layer 2 and the predetermined area of the substrate 1 is between 0.02 μm and 20 μm. Then, a portion of the predetermined region exposed from the flat substrate surface 11 of the substrate 1 is laterally crystallized to form a first crystal layer 3, and the convex pattern layer 2 is coated on the first layer. In the epitaxial layer 3. Referring to FIG. 2, the first epitaxial layer 3 is separated by a laser to a predetermined area above the substrate 1 of the 201203323, thereby forming a liquefied sacrificial layer 4 at the interface between the first epitaxial layer 3 and the substrate 1. It is further noted that, in the preferred embodiment, the first epitaxial layer 3 is a gallium nitride 'after a laser breakdown bond to form a layer of marshalling gas. Referring to FIG. 3, a first crystal layer 5 is epitaxially formed from the first epitaxial layer 3. Referring to FIG. 4 and FIG. 5, the patterned film layer 2 is removed by using a hydrofluoric acid wet etchant. Since the patterned film layer 2 is coated in the first epitaxial layer 3, the patterning is removed by etching. After the film layer 2 is formed, a plurality of holes 31 are formed inside the first epitaxial layer 3, and the holes 31 weaken the structural strength of the first epitaxial layer 3. It is worth mentioning that 'the thickness of the first epitaxial layer 3 is larger than the thickness of the patterned film layer 2' and the thickness of the patterned film layer 2 ranges from 0.01 micrometers to 5 micrometers. More preferably, the patterned film layer 2 has a thickness ranging from 0 μm to 1 μm to 3 μm. Referring to FIG. 6 and FIG. 7, a wet etchant is introduced into the holes 3 i, the liquefied sacrificial layer 4 is etched away, and the substrate is peeled off from the second epitaxial layer 5, and the An epitaxial layer 3 is removed. And not described above, the liquefied sacrificial layer 4' is formed by irradiation of each of the first epitaxial layer 3 and the substrate, and the patterned layer 2 is formed by the patterning

5, the efficiency of removing the substrate 1, the hole 3 i of the structural strength of the crystal layer 3, and the benefit of the layer 4 i is effectively increased from the second epitaxial film, so that the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent change of the patent scope and the description of the invention according to the invention. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side elevational view showing a first preferred embodiment of a method for fabricating a microcrystalline substrate of the present invention, in which a substrate is sequentially formed, a patterned film layer, and a first epitaxial film; 2 is a side view of the continuation of the figure i, illustrating that the first epitaxial layer corresponding to the predetermined area on the substrate is destroyed by laser, and a liquefied sacrificial layer is formed at the interface between the first epitaxial layer and the substrate; FIG. 3 is a continuation; 2 is a side view showing the epitaxial growth of a second insect film on the first epitaxial film; FIG. 4 is a side elevational view continuing from FIG. 3, illustrating the removal of the patterned film layer by wet etching. FIG. 5 is a side elevational view of FIG. 4, illustrating the structure of removing the patterned film layer to weaken the first epitaxial film; FIG. 6 is a side elevational view continuing from FIG. 5, illustrating the liquefaction sacrificial layer button engraving Removing and separating the substrate and the second epitaxial film; and FIG. 7 is a side elevational view continuing from FIG. 6, illustrating the second epitaxial film in the first preferred embodiment. 201203323 [Explanation of main component symbols] 1 •... -·...substrate 31... ...··孔11...........substrate surface 4...·..... liquefaction sacrificial layer 2 .... •'...·pattern Film layer 5 ··. ----The first one from the day film 3...... ..... day film

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Claims (1)

201203323 VII. Patent application scope: 1. A method for manufacturing an epitaxial substrate, comprising: (a) forming a patterned film layer on a substrate; (b) epitaxially crystallizing from the patterned film layer to form a a first remote layer; (c) destroying the first epitaxial layer by a laser corresponding to a predetermined region above the substrate to form a liquefied sacrificial layer at a boundary of the first epitaxial layer and the substrate; (d) Forming a second worm layer from the first crystal layer of e-Xuan; (e) removing the patterned film layer by silver etching, weakening the structure of the first epitaxial layer; and (f) etching to remove the liquefaction The film is sacrificed to peel the substrate from the second crystal film. 2. The method of manufacturing an epitaxial substrate according to the above application, wherein in the step (a), the substrate comprises a flat substrate surface, and a predetermined pattern layer is formed on a predetermined surface of the substrate surface. In step (b), the convex patterned layer is coated in the first epitaxial layer. 3. According to the method for manufacturing the insect crystal substrate described in the scope of the patent application, the e-step (e) towel removes the patterned film layer by using a wet type engraving agent to generate the first epitaxial layer. A plurality of holes inside the layer that weaken the structural strength of the first epitaxial layer. 4. According to the method for producing an epitaxial substrate according to the first application of the patent application, in the first step of the present invention, in the step (f), the wet etchant is introduced into the holes by the wet type 2, and the wet etchant is introduced into the holes. The liquefied sacrificial film is removed by etching, and the substrate is peeled off from the second epitaxial layer. The method of manufacturing the epitaxial substrate according to the fourth aspect of the patent application includes a step (f) after the step (f), the first stray film is touch-etched to remove β 6. The method for manufacturing an epitaxial substrate according to the scope of the patent application, wherein the first The thickness of the epitaxial layer is greater than the thickness of the patterned film layer, and the patterned film layer has a thickness ranging from 微米1 μm to 5 μm. 7. The method of manufacturing an epitaxial substrate according to claim 6, wherein the patterned film layer has a thickness ranging from 微米1 μm to 3 μm. 8. The method of manufacturing an epitaxial substrate according to claim 1, wherein the patterned layer is a regular strip pattern, and the total width of the patterned film layer and the predetermined area of the substrate is 0.02 micron to 20 microns.