TW201203199A - Pixel driving circuit and pixel driving method - Google Patents
Pixel driving circuit and pixel driving method Download PDFInfo
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- TW201203199A TW201203199A TW99122173A TW99122173A TW201203199A TW 201203199 A TW201203199 A TW 201203199A TW 99122173 A TW99122173 A TW 99122173A TW 99122173 A TW99122173 A TW 99122173A TW 201203199 A TW201203199 A TW 201203199A
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201203199 W · * ^ Λ ^ r r &·«»Οθ/Χ 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種驅動電路及驅動方法, β 有關於一種畫素驅動電路及晝素驅動方法。、 特别疋 【先前技術】 術之一 .近來’由於科技的進步,有機發光二極體㈣anic light emitting diode,OLED)材料之亮度及生命期已大為改善, 且其具有高對比、高視纽低耗電的紐,目此有機發光 二極體顯示器被視為是未來最具有發展潛力的平面顯示技 般而5,在咼階應用時,有機發光二極體顯示器大 多以主動方式來驅動(active matrix,AM),以得到較古的 解析度及較小的雜訊干擾。在主動方式的驅動下,有=發 光二極體顯示器的每個晝素需要配置一個薄膜電晶體,二 驅動對應的有機發光二極體發光。然而,對大面^的製程 而言’此薄膜電晶體容易產生特性變異的現象,此 吊見於元件的臨界電壓(threshold voltage),其可飴的也% 為製程的變異或是科的電偏移效應。因此,、如何 界電壓的變異以達到均勻的亮度輸出,已成為一重要的課 題。 圖1繪示習知用以解決臨界電壓變異的晝素驅動電 路。請參考圖1,在習知的晝素驅動電路中,除了用以驅動 晝素的驅動電晶體DTFT以外,晝素驅動電路另包括了開關 201203199201203199 W · * ^ Λ ^ rr &·«»Οθ/Χ VI. Description of the Invention: [Technical Field] The present invention relates to a driving circuit and a driving method, and β relates to a pixel driving circuit and 昼Prime drive method. Specially, [Prior Art] One of the techniques. Recently, due to advances in technology, the brightness and lifetime of organic light-emitting diodes (OLEDs) have been greatly improved, and they have high contrast and high-vision Low-power consumption, the organic light-emitting diode display is regarded as the most promising flat-panel display technology in the future. 5 In the case of the application, the organic light-emitting diode display is mostly driven in an active manner ( Active matrix, AM) for older resolution and less noise interference. Driven by the active mode, each element of the =-emitting diode display needs to be equipped with a thin film transistor, and the second driving corresponding organic light-emitting diode emits light. However, for the process of large-faced ^, the thin-film transistor is prone to characteristic variation, and the sag is seen in the threshold voltage of the component, and the 饴 is also the variation of the process or the electrical bias of the branch. Shift effect. Therefore, how to modulate the voltage to achieve uniform brightness output has become an important topic. Figure 1 illustrates a conventional pixel drive circuit for addressing critical voltage variations. Referring to FIG. 1, in the conventional pixel driving circuit, in addition to the driving transistor DTFT for driving the pixel, the pixel driving circuit further includes a switch 201203199
34iyitwf.doc/I 電晶體SWl〜SW3,以記憶驅動電晶體DTFT的臨界電壓, 其操作方式如下。首先,在週期耵時,電壓VDD對驅動電 晶體DTFT的閘極預充電。其後,在週期丁2時,訊號DT設 定為資料電壓VDATA,而驅動電晶體DTFT的閘極電壓則透 過開關電晶體SW1、SW2放電,直至該點電壓等於臨界電 壓vT加上資料電壓Vdata (Vt+Vdata)時才停止放電,並記 錄臨界電壓值。最後,訊號TN〇則是打開開關電晶體SW3 以使電壓vDD開始驅動有機發光二極體0LED。 ® 值得注意的是,此一設計雖然適合於提升型(enhance mode)電晶體,但當電晶體元件為空乏型(depled〇n m〇de) 電晶體時,在上述週期T2中,預定放電的目標電壓 Vt+Vdata將小於臨界電壓ντ,因此最終只能將驅動電晶體 的閘極電壓放電至資料電壓VDATA之準位,而失去了記憶 臨界電壓的功能。因此,當電晶體元件為空乏型電晶體時, 使用上述晝素驅動電路之顯示器’其畫面品質仍然不佳。 在習知技藝中,其他許多補償元件臨界電壓變異的技術亦 • 大多採用此原理設計,因此在使用空乏型電晶體作為晝素 元件時’仍會面臨到相同的問題。 【發明内容】 本發明之範例實施例提供一種晝素驅動電路。當書素 驅動電路的電晶體元件為空乏型電晶體時,所述畫;二動 電路仍可正常運作並補償驅動電晶體的臨界電壓變異。 本發明之範例實施例提供一種晝素驅動方法,其適於34iyitwf.doc/I The transistors SW1 to SW3 are used to memorize the threshold voltage of the transistor DTFT, which operates as follows. First, at period 耵, the voltage VDD precharges the gate of the driving transistor DTFT. Thereafter, at a period of 2, the signal DT is set to the data voltage VDATA, and the gate voltage of the driving transistor DTFT is discharged through the switching transistors SW1 and SW2 until the voltage at the point is equal to the threshold voltage vT plus the data voltage Vdata ( The discharge is stopped when Vt+Vdata), and the threshold voltage value is recorded. Finally, the signal TN〇 turns on the switching transistor SW3 to cause the voltage vDD to start driving the organic light emitting diode OLED. ® It is worth noting that although this design is suitable for an enhancement mode transistor, when the transistor element is a depleted 〇de transistor, the target of the predetermined discharge is in the above period T2. The voltage Vt+Vdata will be less than the threshold voltage ντ, so that only the gate voltage of the driving transistor can be discharged to the level of the data voltage VDATA, and the function of the memory threshold voltage is lost. Therefore, when the transistor element is a depleted transistor, the display using the above-described halogen drive circuit is still inferior in picture quality. In the prior art, many other techniques for compensating the critical voltage variation of the component are also mostly designed using this principle, so the same problem is still encountered when using a depleted transistor as a halogen component. SUMMARY OF THE INVENTION An exemplary embodiment of the present invention provides a pixel driving circuit. When the transistor component of the pixel drive circuit is a depleted transistor, the two-circuit circuit can still operate normally and compensate for the critical voltage variation of the drive transistor. An exemplary embodiment of the present invention provides a halogen driving method suitable for
201203199 ^iyiiwi.u〇c/I 動:路。當畫素驅動電路的電晶體元件為空乏变 電ί«述晝素驅動方法仍可補償驅動電晶體的臨界 電善畫素面板亮度的均勻性。 於驅動一:C實施例提供-種晝素驅動電路’其適 元、一先70件。所述畫素驅動電路包括一第〆驅動單 驅動路本-,動單70以及一調整單A。第一驅動單元用以 二艇t 其中第—驅動單純括-第—電晶體。第 :動?早;"用以提供-資_至第-電晶體,以使第-早據資料電壓驅動發光元件。調整單元用以調整 電阳體的閘極電壓,其中調整單元包括-設定電容及 ㈣=電晶體,·^設定電容與第二電晶體串_接於第一 勒早70與第二驅動單元之間。 在本發明之範例實施例中,上述之設定電容用以調整 第一電晶體的閘極電壓。 ϋ—發明之範例實補巾’上述之晝素縣電路更包 =儲存電容。儲存電容祕於第—鶴單元與第二驅動 之m儲存資料電壓於第-電晶體之-閘極。 在本發明之範例實施例中,上述之第—驅動單元更包 =三電晶體。第三電晶體具有—閘極、—第—源/沒極 號。ir源/汲極。第三電晶體之閘極受控於一第一控制訊 :第二電晶體之第—源/汲極耦接至一第一電壓。第三電 =之第二源/沒極執接至第一電晶體之—第—源/沒極。 一^,第一電晶體之一第二源/汲極耦接至發光元件之一第 端,且發光元件之-第二端減至一第二控制訊號。 201203199201203199 ^iyiiwi.u〇c/I Action: Road. When the transistor component of the pixel driving circuit is depleted, the driving method of the pixel can still compensate for the uniformity of the brightness of the critical electric panel of the driving transistor. In the drive one: the C embodiment provides a kind of elementary drive circuit, which is 70 elements. The pixel driving circuit includes a second driving single drive modebook, a moving single 70 and an adjustment single A. The first driving unit is used for the second boat t, wherein the first drive-only transistor-first transistor. The first: move? Early; " to provide - to the first - transistor, so that the first - early according to the data voltage to drive the light-emitting elements. The adjusting unit is configured to adjust a gate voltage of the electric male body, wherein the adjusting unit comprises: setting a capacitance and (4)=a transistor, and the setting capacitance and the second transistor string are connected to the first first 70 and the second driving unit. between. In an exemplary embodiment of the invention, the set capacitor is used to adjust the gate voltage of the first transistor. ϋ—The invention of the example of the patch. The above-mentioned 昼素县circuit package = storage capacitor. The storage capacitor is secreted by the first - the crane unit and the second drive m to store the data voltage at the gate of the first transistor. In an exemplary embodiment of the present invention, the first driving unit further includes a triple transistor. The third transistor has a gate, a - source, and a poleless number. Ir source / bungee. The gate of the third transistor is controlled by a first control signal: the first source/drain of the second transistor is coupled to a first voltage. The third source = the second source / the pole is not connected to the first transistor - the first source / the no pole. A second source/drain of the first transistor is coupled to one of the first ends of the light emitting element, and the second end of the light emitting element is reduced to a second control signal. 201203199
34191twf.doc/I 在本發明之範例實施例中,上述之第二驅動單元包括 一第四電晶體以及一第五電晶體。第四電晶體具有一閘 極、一第一源/汲極及一第二源/汲極。第四電晶體之閘極 受控於一第三控制訊號。第四電晶體之第一源/汲極接收資 料電壓。第四電晶體之第二源/汲極耦接至第一電晶體之閘 極。第五電晶體具有一閘極、一第一源/〉及極及一第二源/34191 twf.doc/I In an exemplary embodiment of the invention, the second driving unit includes a fourth transistor and a fifth transistor. The fourth transistor has a gate, a first source/drain, and a second source/drain. The gate of the fourth transistor is controlled by a third control signal. The first source/drain of the fourth transistor receives the data voltage. The second source/drain of the fourth transistor is coupled to the gate of the first transistor. The fifth transistor has a gate, a first source/> and a pole, and a second source/
晶 的閘極,且調整單元之第二端耦接第一電晶體的源/汲 /及極。第五電晶體之閘極受控於一第四控制訊號。第五電 晶體之第一源/汲極接收資料電壓。第五電晶體之第二源/ 汲極耦接至第一電晶體之第二源/汲極。在此,調整單元具 有一第一端及一第二端。調整單元之第一端輕接第一電 極 在本發明之範例實施例中,上述之晝素驅動電路在一 預充電期間,第-控制訊號、第二控制訊號、第三控制訊 號及第四控制訊號為咼準位。在一設定期間,第一栌制訊 號及第三控制減為低準位,且第二㈣訊號及^控_ 訊號為高準位。在-發光期,第—控制訊號為高準位, 且第二控制減、第三控制錢及“㈣訊縣低準位。 在本發明之範例實施例中,上述之第一電晶體、第二 電曰^體、第三電晶體、第四電晶體及第五電晶體至少包括 一空乏型電晶體。 在本發明之範例實施例中,上述之第四電晶體之第一 ,原/汲極更接收一參考電壓。 在本發明之範例實施例中,上述之第一驅動單元更包 201203199a gate of the crystal, and the second end of the adjustment unit is coupled to the source/汲/pole of the first transistor. The gate of the fifth transistor is controlled by a fourth control signal. The first source/drain of the fifth transistor receives the data voltage. The second source/drain of the fifth transistor is coupled to the second source/drain of the first transistor. Here, the adjustment unit has a first end and a second end. The first end of the adjusting unit is connected to the first electrode. In an exemplary embodiment of the present invention, the pixel driving circuit has a first control signal, a second control signal, a third control signal, and a fourth control during a precharge period. The signal is 咼 position. During a set period, the first throttle signal and the third control are reduced to a low level, and the second (four) signal and the control signal are at a high level. In the illuminating period, the first control signal is at a high level, and the second control is reduced, the third control is reduced, and the (four) xianxian low level. In an exemplary embodiment of the present invention, the first transistor, the first The second transistor, the third transistor, the fourth transistor, and the fifth transistor comprise at least one depletion transistor. In an exemplary embodiment of the invention, the first transistor of the fourth transistor is Extremely receiving a reference voltage. In an exemplary embodiment of the present invention, the first driving unit is further included 201203199
..........oc/I 2第三電晶體。第三電晶體具有一閘極、一第一源/汲極及 η —第二源/汲極。第三電晶體之閘極受控於一第一控制訊 號、。第三電晶體之第二源/沒極祕至-第二電4。在此, 發光元件之—第—端搞接至—第二控制訊號,且發光元件 之-第二端輕接至第一電晶體之一第一源/沒極。第—電晶 體之一第二源/沒極祕至第三電晶體之第-源/汲極。 在本發明之範例實施例中,上述之第二驅動單元包括 -第四電晶體以及一第五電晶體。第四電晶體具有一閘 ,第源/’及極及-第二源/沒極。第四電晶體之間極 受控於-第三控制訊號。第四電晶體之第—源後極接收資 料電壓。第四電晶體之第二源Λ及極_至第—電晶體之問 極。第五電晶體具有一閘極、一第一源成極及一第二源/ 汲極。第五電晶體之閘極受控於—第四控制訊號。第五電 晶體之第-源/没極接收資料電壓。第五電晶體之第二源/ 汲極輕接至第-電晶體之第—助及極。在此,調整單:具 有-第-端及-第二端。調整單元之第—端輕接第一^ 體的閘極’ 調整單元之第二端输發光元件的第二端Μ 在本發明之範例實施例中,上述之晝素驅動電路在一 預充電期間’第-控制訊號為低準位,衫二控制訊號、 第三控制訊號及第四控制訊號為高準位。在定期間, 第-控制訊號、第二控制訊號及第三控制訊^低準ς 且第四控制訊號為向準位。在一發光期間,第一控制訊號 及第二控制喊為高準位,且第三控制訊號及第:控制^ 號為低準位。 & 201203199..........oc/I 2 third transistor. The third transistor has a gate, a first source/drain, and η - a second source/drain. The gate of the third transistor is controlled by a first control signal. The second source of the third transistor is not extremely secretive - the second electricity 4. Here, the first end of the light-emitting element is connected to the second control signal, and the second end of the light-emitting element is lightly connected to one of the first source/no-pole of the first transistor. The first source of the first-electrode crystal is not extremely secretive to the first source/drain of the third transistor. In an exemplary embodiment of the invention, the second driving unit includes a fourth transistor and a fifth transistor. The fourth transistor has a gate, a source/'and a pole and a second source/no pole. The fourth transistor is extremely controlled by a - third control signal. The first source and the rear pole of the fourth transistor receive the data voltage. The second source of the fourth transistor and the pole of the pole-to-electrode. The fifth transistor has a gate, a first source and a second source/drain. The gate of the fifth transistor is controlled by a fourth control signal. The first source/no pole of the fifth transistor receives the data voltage. The second source/drain of the fifth transistor is lightly connected to the first and the second of the first transistor. Here, the adjustment order has: a - end - and a second end. The second end of the adjustment unit is connected to the second end of the first terminal of the adjustment unit. In the exemplary embodiment of the present invention, the above-mentioned pixel drive circuit is during a precharge period. 'The first control signal is low, and the second control signal, the third control signal and the fourth control signal are at a high level. During the predetermined period, the first control signal, the second control signal, and the third control signal are low-level and the fourth control signal is a horizontal position. During a lighting period, the first control signal and the second control call are at a high level, and the third control signal and the control signal are at a low level. &201203199
34191twf.doc/I 本發明之另一範例實施例提一 適於一書素驅叙娜種畫素驅動方法,其 早儿。所述晝素驅動方法包括如下步驟=早兀及一調整 ί ’驅動發光元件,其中第-驅動單元包括 = 第一驅動單元依據資料電動電體,以使 定電容及-第電中調磐單元包括-設 接於第-驅動單元與第二驅動單元之間第一電曰曰體串_ 在本發明之範例實施例中,在調整 電壓的步驟巾,藉由設定電容,娜^體的閘極 壓。 職第-電晶體的閘極電 在本翻之_實施财,上述之晝素驅動電 電容輕接於第一驅動單元與第二驅動 °所 更包括°藉由儲存電容,儲 存資料電壓於第一電晶體之.一閉極。 在本發明之範例實施例中,上述之調整單元 :端及-第二端。在提供資料電壓至第—電晶體的步驟 中,在一預充電期間,分別將調整單元之第一端及第二端 充電至資料電壓及一第一電壓。 在本發明之範例實施例中,上述之在調整第一電晶體 的閘極的步驟中’在-毁定期間,藉由第二驅動單元 及調整單元,使調整單元之第一端放電,以補償第一電晶 201203199 ^ *在〆轟私* 體的臨界電壓值。 元件 在本發明之範例實施例中’在驅動發光元件的步驟 中,在一發光期間,依據設定電容所記憶的第一電晶體的 臨界電壓值,開啟第一電晶體,.以藉由第一電壓驅=發光 在本發明之範例實施例中,在提供資料電壓至第一電 晶體的步驟中,更提供一參考電壓至第一電晶體。 基於上述,在本發明之範例實施例中,晝素驅動電路 及畫素驅動方法可用以補償驅動電晶體臨养電壓的不均勻 或漂移,以提供發光元件較均勻的電流。另外,在本發明 之範例實施例中,即使晝素驅動電路係以空乏型電晶體組 成時,驅動電晶體的臨界電壓補償功能仍可正常運:。〆 為讓本發明之上述特徵和優點能更明顯易懂,下 舉實施例,並配合所附圖式作詳細說明如下。 、 【實施方式】 近來’由於新的半導體材料的發現,使得軟性電子庳 用的實現變得可能。這歸料例如衫機半導體材料, 是氧化鋅半導體材料,其可在低溫的情形下 赞 造’因此特別適合製造於_可撓曲的基板之上。然^ 在塑膠可撓曲的基板上的電晶體常具有偏向空乏型元沾 特性。亦即’在電晶體間極不加偏壓時,電晶體便益、、= ”閉。由於上述特性,使得現存的晝素驅動電路^ 功能上容易產生錯誤’而無法補償臨界雙的變異而導敢34191 twf.doc/I Another exemplary embodiment of the present invention is suitable for a book-driven narration-driven method, which is early. The halogen driving method includes the following steps: early pressing and one adjusting, driving the light emitting element, wherein the first driving unit comprises: the first driving unit is based on the data electric body, so as to make the constant capacitance and the electric current adjusting unit Including: connecting the first electric body string between the first driving unit and the second driving unit _ In the exemplary embodiment of the present invention, in the step of adjusting the voltage, by setting the capacitance, the gate of the body Extreme pressure. The gate electrode of the dynasty-transistor is turned over in the present invention. The above-mentioned elementary driving capacitor is lightly connected to the first driving unit and the second driving unit. The storage voltage is stored by the storage capacitor. A transistor. A closed pole. In an exemplary embodiment of the present invention, the adjusting unit is: an end and a second end. In the step of providing the data voltage to the first transistor, during the precharging period, the first end and the second end of the adjusting unit are respectively charged to the data voltage and a first voltage. In an exemplary embodiment of the present invention, in the step of adjusting the gate of the first transistor, the first end of the adjusting unit is discharged by the second driving unit and the adjusting unit during the in-destruction period. Compensating for the first electro-crystal 201203199 ^ * The critical voltage value of the body. In the exemplary embodiment of the present invention, in the step of driving the light-emitting element, during a light-emitting period, the first transistor is turned on according to the threshold voltage value of the first transistor memorized by the set capacitance, by using the first Voltage Drive = Illumination In an exemplary embodiment of the present invention, in the step of providing a data voltage to the first transistor, a reference voltage is further provided to the first transistor. Based on the above, in an exemplary embodiment of the present invention, the pixel drive circuit and the pixel drive method can be used to compensate for unevenness or drift of the drive transistor voltage, to provide a relatively uniform current of the light-emitting element. In addition, in the exemplary embodiment of the present invention, even if the pixel driving circuit is composed of a depleted transistor, the threshold voltage compensation function of the driving transistor can be normally operated: The above described features and advantages of the present invention will be more apparent from the following description. [Embodiment] Recently, the realization of soft electronic devices has become possible due to the discovery of new semiconductor materials. This is attributed, for example, to the semiconductor material of the machine, which is a zinc oxide semiconductor material which can be appreciated at low temperatures and is therefore particularly suitable for fabrication on a flexible substrate. However, transistors on plastic flexible substrates often have a biased element. That is to say, 'the transistor will benefit when it is not biased between the transistors, and it will be closed. Because of the above characteristics, the existing halogen drive circuit is easy to generate errors' and cannot compensate for the variation of the critical double. dare
201203199 ^4iyirwf.doc/I 面板亮度的不均勻。 β因此,至少為了解決上述軟性面板顯示器亮度均勻性 的門通在本發明之把例實施例中,晝素驅動電路及畫素 驅動方法可克服習知的晝素驅動電路應用在空乏型電晶體 時失效的問題,以得到品質更加良好的顯示器。 ,一在下述的範例實施例中,將以有機發光二極體做為發 光=件,任何所屬技術領域中具有通常知識者當知有機發 光-極體並非用以限定本發明的發光元件。同時,本發明 亦不限定於使用在軟性面板顯示器的晝素驅動電路,舉凡 任何使用在贿光元件作為面板晝素之晝素驅動 電路皆為本發明所欲保護之範疇。 一立圖2Α為本發明一範例實施例之晝素驅動電路的方塊 示思圖。圖2Β為圖2Α之調整單元的電路示意圖。請參考 圖2Α及圖2Β,本實施例之晝素驅動電路200適於驅動一 發光το件D,其包括一第一驅動單元21()、一第二驅動單 元220、一調整單元230及一儲存電容CST。在此,調整單 兀23〇。包括設定電容cSET及電晶體L,其串聯輕接_一 驅動單7L 210與第二驅動單元22〇之間。 '詳細而言,在本實施例中,發光元件D例如是一有機 發^二極體,其為軟性面板齡器的可撓曲基板上的其中 之了晝素。第—驅動單元训藉由驅動電晶體1來驅^發 光疋件D°第二驅動單元22G用以提供-資料電壓VData 至驅動電晶體τ】,以使驅動電晶體Ti可依據資料電壓 VDATA驅動發光元件D。另外,儲存電容CsT婦於第一 201203199 -.......—jc/l 驅動單元210與第二驅動單元22〇之間,以 VDATA於驅動電晶體Τι之閘極。 貢枓電壓 值得注意的是,本實施例之調整單元230可用' _ 驅動電晶體L的閉極電塵(亦即節點&的電 M調整 整單元230的電晶體I受控於控制訊號SET,且奎調 動電路200不同的操作期間被開啟或不開啟,以 節驅動電晶體τ!的閘極電壓的調節路徑。目此, T2被開啟時,設定電容‘可調整驅動電晶體 電壓並記憶驅動電晶體了】的臨界電壓值。 因此,在本實施例中,藉由調整單元230的作用,書 素驅動電路200可補償驅動電晶體乃臨界電壓的不均勻$ 漂移,以提供發光元件1)較均勻的電流。 芝 曰進一步而言,第一驅動單元210更包括一電晶體Τ3。 電晶體A之閘極受控於控制訊號ΕΜ(第一控制訊號)。電 曰a體A之一源/汲極耦接至一高準位電壓乂⑽(第一電 壓)。電晶體Τ3之另一源/汲極耦接至驅動電晶體Τι之一源 /汲極。,外’驅動電晶體1之另一源/汲極耦接至發光元 件D之陽極’而發光元件D之陰極耦接至控制訊號VL (第 二控制訊號)。201203199 ^4iyirwf.doc/I The unevenness of the panel brightness. Therefore, at least in order to solve the above-described example of the brightness uniformity of the flexible panel display, in the embodiment of the present invention, the pixel driving circuit and the pixel driving method can overcome the conventional pixel driving circuit applied to the depleted transistor. The problem of time lapse is to get a better quality display. In the following exemplary embodiments, an organic light-emitting diode will be used as a light-emitting element, and any person skilled in the art will recognize that the organic light-emitting body is not intended to limit the light-emitting element of the present invention. At the same time, the present invention is not limited to the pixel driving circuit used in the flexible panel display, and any of the pixel driving circuits used as the panel elements in the present invention is in the scope of the present invention. Figure 2 is a block diagram of a pixel drive circuit in accordance with an exemplary embodiment of the present invention. Figure 2 is a circuit diagram of the adjustment unit of Figure 2A. Referring to FIG. 2A and FIG. 2, the pixel drive circuit 200 of the present embodiment is adapted to drive a light-emitting component D, which includes a first driving unit 21 (), a second driving unit 220, an adjusting unit 230, and a Storage capacitor CST. Here, adjust the single 兀23〇. The setting capacitor cSET and the transistor L are connected in series between the driving unit 7L 210 and the second driving unit 22A. In detail, in the present embodiment, the light-emitting element D is, for example, an organic hair-emitting diode which is a halogen on a flexible substrate of a soft panel-type age. The first driving unit is driven by the driving transistor 1 to drive the light emitting element D. The second driving unit 22G is configured to supply the data voltage VData to the driving transistor τ, so that the driving transistor Ti can be driven according to the data voltage VDATA. Light-emitting element D. In addition, the storage capacitor CsT is between the first 201203199-.......-jc/l drive unit 210 and the second drive unit 22〇, with VDATA driving the gate of the transistor Τ. It is worth noting that the adjustment unit 230 of the present embodiment can drive the closed-pole electric dust of the transistor L (that is, the node I of the node M) adjusts the transistor I of the whole unit 230 to be controlled by the control signal SET. And the switch circuit 200 is turned on or off during different operation periods to drive the adjustment path of the gate voltage of the transistor τ!. Therefore, when T2 is turned on, the set capacitance 'adjustable drive transistor voltage and memory The threshold voltage value of the driving transistor is thus. Therefore, in the embodiment, by the action of the adjusting unit 230, the pixel driving circuit 200 can compensate for the uneven shift of the threshold voltage of the driving transistor to provide the light-emitting element 1 ) a more uniform current. Further, the first driving unit 210 further includes an transistor Τ3. The gate of transistor A is controlled by a control signal 第一 (first control signal). One source/drain of the body A is coupled to a high level voltage 乂 (10) (first voltage). The other source/drain of the transistor Τ3 is coupled to one of the source/drain electrodes of the driving transistor Τ. The other source/drain of the external driving transistor 1 is coupled to the anode of the light-emitting element D, and the cathode of the light-emitting element D is coupled to the control signal VL (second control signal).
第二驅動單元220包括電晶體T4及電晶體T5。電晶 體丁4之閘極受控於控制訊號CH (第三控制訊號)。電晶體 丁4之一源/及極接收資料電壓VDATA。電晶體Τ4之另一源/ 沒極輕接至驅動電晶體1之閘極。因此,當控制訊號CH 為高準位時’電晶體Τ4為開啟,進而提供資料電壓VDATA 201203199The second driving unit 220 includes a transistor T4 and a transistor T5. The gate of the transistor 4 is controlled by the control signal CH (third control signal). One source/pole of the transistor 4 receives the data voltage VDATA. The other source of the transistor Τ4 is connected to the gate of the driving transistor 1. Therefore, when the control signal CH is at a high level, the transistor Τ4 is turned on, thereby providing a data voltage VDATA 201203199
34iyitwf.d〇c/I 至驅動電晶體。 另外’電晶體Τ'5之閘極受控於控制訊號SET (第四控 制訊號)。電晶體Ts之一源/汲極接收資料電壓Vdata。電 晶體丁5之另一源/汲極耦接至驅動電晶體T1之源/汲極。在 此,調整單元230之一端由節點ηι耦接至驅動電晶體Τι 的閘極,且調整單元230之另一端由節點叱耦接至驅動電 晶體Τι之另一源/》及極。 圖3為圖2Α之晝素驅動電路的各控制訊號的驅動時 • 序圖。請參考圖2Α、圖2Β及圖3,在本實施例中,畫素 驅動電路200的電晶體元件例如皆為η型電晶體,且調整 單元230的兩端分別連接至節點與叱。 以圖3的控制訊號的驅動時序為例,本實施例之畫素 驅動電路200可分為以下數個操作階段: (1) 預充電期間: 在預充電期間pi中,控制訊號EM、VL、CH、SET均 ,高準位,因此電晶體ΙΆ均為開啟狀態,使得第二驅動 • 單兀220可藉由電晶體卞3將資料電壓VDATA詨定至節點ηι。 另外,經由電晶體尺寸的調整,節點叱的電壓可經由電晶 體1設定至接近高準位電壓Vdd。在此,處於高準位的控 制訊號VL,係用以防止發光元件D漏電。 (2) 設定期間: 在设定期間P2巾,控制訊號腿及CH為低準位,而控 制訊號VL及SET^r^準位。因此,低準位的控制訊號⑶關 閉電晶體A,進而使得節點叫成為浮接狀態。同時,低準 20120319934iyitwf.d〇c/I to the drive transistor. In addition, the gate of the transistor 5'5 is controlled by the control signal SET (fourth control signal). One source/drain of the transistor Ts receives the data voltage Vdata. The other source/drain of the transistor D is coupled to the source/drain of the driving transistor T1. Here, one end of the adjusting unit 230 is coupled to the gate of the driving transistor Τ1 by the node ηι, and the other end of the adjusting unit 230 is coupled to the other source/" and the pole of the driving transistor 由 by the node 叱. Fig. 3 is a timing chart showing the driving of each control signal of the pixel drive circuit of Fig. 2; Referring to FIG. 2A, FIG. 2A and FIG. 3, in the embodiment, the transistor elements of the pixel driving circuit 200 are, for example, n-type transistors, and the two ends of the adjusting unit 230 are respectively connected to the node and the node. Taking the driving timing of the control signal of FIG. 3 as an example, the pixel driving circuit 200 of the present embodiment can be divided into the following operation stages: (1) Pre-charging period: During the pre-charging period pi, the control signals EM, VL, Both CH and SET are at a high level, so the transistor ΙΆ is turned on, so that the second driver • the unit 兀 220 can set the data voltage VDATA to the node η by the transistor 卞3. In addition, the voltage of the node 可 can be set to be close to the high level voltage Vdd via the transistor 1 via the adjustment of the transistor size. Here, the control signal VL at a high level is used to prevent the light-emitting element D from leaking. (2) Setting period: During the setting period P2, the control signal leg and CH are low level, and the control signal VL and SET^r^ level. Therefore, the low level control signal (3) turns off the transistor A, which in turn causes the node to be in a floating state. At the same time, low standard 201203199
^Hiyiiwi.uoc/I 位的控制訊號EM亦關閉電晶體T3,因而隔絕了高準位的電 壓VDD。在設定期間Ρ2中’由於控制訊號VL及SET為高準 位’ Ip點叫的電壓會透過調整單元230的電晶體τ2、電容 Cset及電晶體Τ】、Τ5放電,直至節點ηι的電壓等於臨界電壓 vT加上資料電壓Vdata (Vt+Vdata)時才停止放電。此時, 由於驅動電晶體^^為關閉’進而阻止節點n】放電。因此, 驅動電晶體]^的臨界電壓資訊即被記憶在儲存電容^訂或 設定電容CSET之中。 (3)發光期間: 在發光期間P3中,除了控制訊號EM為高準位以外, 控制訊號VL、CH、SET皆為低準位❶高準位的控制訊號em 用以提供高準位電壓VDD給發光元件D(亦即面板晝素)。此 外,控制訊號SET需為低準位以關閉電晶體Τ2,避免節點 η2的電壓邊化影響到節點叫的電壓值。而控制訊號vl變為 低準位,使發光元件D可開始發光。 —由上述操作階段可知,由於驅動電晶體的臨界電壓 育訊已被記憶在儲存電容cST或設定電容Cset之中,因此驅 動電晶體凡的輸出電流的不均勻性可得到改善。是以,在 本實施例中,即使晝素驅動電路2〇〇係以空乏型電晶體組成 時,驅動電晶體1^的臨界電壓補償功能仍可正常=作二 ,圖4為習知的晝素驅動電路之輸出電流對資料電壓關 係圖。圖5為圖2A的晝素,驅動電路之輪出電流對資料電壓 關係圖。圖6為圖2A的晝素驅動電路與習知的晝素驅動電 路之輸出電流的均勻性比較關係圖。 14 201203199The control signal EM of the Hiyiiwi.uoc/I bit also turns off the transistor T3, thereby isolating the high-level voltage VDD. During the set period Ρ2, 'the voltage of the control signal VL and SET is high level' Ip is transmitted through the transistor τ2, capacitor Cset and transistor 调整, Τ5 of the adjustment unit 230 until the voltage of the node ηι is equal to the critical value. The discharge is stopped when the voltage vT is added to the data voltage Vdata (Vt+Vdata). At this time, since the driving transistor is turned off, the node n is prevented from being discharged. Therefore, the threshold voltage information of the driving transistor is stored in the storage capacitor or the setting capacitor CSET. (3) Illumination period: In the illumination period P3, except that the control signal EM is at a high level, the control signals VL, CH, and SET are both low level and high level control signals em for providing a high level voltage VDD. The light-emitting element D (i.e., the panel element) is given. In addition, the control signal SET needs to be at a low level to turn off the transistor Τ2, so as to prevent the voltage edge of the node η2 from affecting the voltage value of the node. The control signal v1 becomes a low level, so that the light-emitting element D can start to emit light. - From the above operation stage, since the threshold voltage of the driving transistor has been memorized in the storage capacitor cST or the set capacitor Cset, the unevenness of the output current of the driving transistor can be improved. Therefore, in the present embodiment, even if the halogen driving circuit 2 is composed of a depleted transistor, the threshold voltage compensation function of the driving transistor 1 can still be normal = 2, and FIG. 4 is a conventional one. The output current vs. data voltage diagram of the prime driver circuit. Fig. 5 is a diagram showing the relationship between the current of the driving circuit and the data voltage of the pixel of Fig. 2A. Fig. 6 is a graph showing the relationship between the uniformity of the output current of the pixel drive circuit of Fig. 2A and the conventional halogen drive circuit. 14 201203199
^i^xiwf.doc/I 请參考圖4〜圖6,圖4及圖5係以模擬引擎spectre分別 模擬習知的畫素軸電路以及圖Μ的晝素驅動電路所得 ,輸出電流^資料電壓關係圖。晝素驅動電路中的元件係 採用a-IGZO_電晶體元件作為元件模型參數的參考。量 測到的驅動電晶體的臨界電壓值VtU5V,在此臨界電壓 Vt變異假設為IV。 ^使用習知的晝素驅動電路之輸出電流對資料電壓的 • 結,繪示於圖4中。在習知的畫素驅動電路中,由於空乏型 電晶體的使用,原補償臨界電壓變異的功能失效,而造成 如圖4所示之輸出電流不均勻的現象。 曰相反地,使用圖2八的畫素驅動電路,可成功克服此一 問題。圖2A的晝素驅動電路·的輸出電流對資料電壓的 結果緣示於圖5中。由圖5可知’驅動電晶體的臨界電壓^ 在正負IV的變異之下,輸出電流有相當良好的均句性。亦 即,在不同的臨界電壓之下,輸出電流均近乎相等。 圖6中比較習知的晝素驅動電路與圖2Α的晝素驅動雷 •,得到的輸出電流之不均勻性。由圖6可知,使用本發明之 範例實施例所提出的晝素驅動電路,可大為改善驅動電晶 體的輸出電流的不均勻性,在此處可小於4〇/{^ 應注意的是,在本發明之範例實施例中,當晝素驅動 電路的電晶體元件皆為空乏型電晶體時,晝素^電路可 正常運作並補償驅動電晶體的臨界電壓變異,但本發明並 不限於此。在其他實施例中,當晝素驅動電路的電丄體元 #係由空乏型或提升型電晶體所組成時,晝素驅動電路仍 15^i^xiwf.doc/I Please refer to FIG. 4 to FIG. 6. FIG. 4 and FIG. 5 are respectively obtained by simulating the pixel axis circuit of the conventional pixel and the pixel driving circuit of the figure, and output current ^ data voltage. relation chart. The components in the pixel drive circuit use the a-IGZO_transistor element as a reference for the component model parameters. The measured threshold voltage value VtU5V of the driving transistor is measured, and the threshold voltage Vt variation is assumed to be IV. ^ Use the output current of the conventional halogen drive circuit to the data voltage, as shown in Figure 4. In the conventional pixel driving circuit, the function of the original compensation threshold voltage variability is invalid due to the use of the depleted transistor, resulting in a non-uniform output current as shown in FIG. Conversely, using the pixel drive circuit of Figure 28, this problem can be successfully overcome. The result of the output current of the pixel drive circuit of Fig. 2A versus the data voltage is shown in Fig. 5. It can be seen from Fig. 5 that the threshold voltage of the driving transistor ^ under the variation of positive and negative IV has a fairly good uniformity of the output current. That is, the output currents are nearly equal under different threshold voltages. In Fig. 6, the conventional halogen drive circuit and the pixel drive lightning of Fig. 2 are used to obtain the unevenness of the output current. It can be seen from FIG. 6 that the use of the pixel driving circuit proposed in the exemplary embodiment of the present invention can greatly improve the unevenness of the output current of the driving transistor, and can be less than 4 〇/{^ here. In an exemplary embodiment of the present invention, when the transistor elements of the pixel driving circuit are all depleted transistors, the pixel circuit can operate normally and compensate for the threshold voltage variation of the driving transistor, but the invention is not limited thereto. . In other embodiments, when the electric body of the halogen drive circuit is composed of a depleted or lifted transistor, the pixel drive circuit is still 15
201203199 t/I 可正常運作並補償驅動電晶體的臨界電壓變異β 圖7為本發明一範例實施例之晝素驅動電路的方塊示 思圖。請參考圖7 ’在本實施例中’晝素驅動電路·的電 晶體元件例如是空乏型或提升型電晶體。 本實施例之晝素驅動電路700與圖2Α之晝素驅動電路 200之間的差異例如在於,本實施例之第二驅動單元72〇除 了接收資料電壓vDATA以外,更接收一參考電壓Vref,以確 保當驅動電晶體丁!為提升型電晶體時,在設定期間的驅動 電晶體Τι仍可保持在關閉狀態,進而使得驅動電晶體丁^的 臨界電壓資訊可被記憶在儲存電容CST或設定電容cSET之 中。 詳細而言,在本實施例中,電晶體T4之一源/汲極接 收資料電壓vDATA與參考電壓vREF (Vdata+Vref)。因此, 當控制訊號CH為高準位時,電晶體τ4為開啟,進而提供 電壓Vdata+VreF至節點η〗。另外’電晶體Τ5之一源/没極 則僅接收資料電壓VDATA。 因此,在此設計架構之下,當節點〜在設定期間放電 時,其電壓仍可高於資料電壓VDATA,而直至節點ηι的電壓 等於臨界電壓vT加上資料電壓vDATA (VT+VDATA)時才停止 放電。此時,驅動電晶體1^的臨界電壓資訊即被記憶在儲 存電容Cst或設定電容Cset之中。 所以,在本實施例中,透過適當的設計,可使得由空 乏型或提升型電晶體元件所組成的晝素驅動電路,均可正 常運作並補償驅動電晶體的臨界電壓。 201203199201203199 t/I can operate normally and compensate for the threshold voltage variation of the driving transistor. Fig. 7 is a block diagram of a pixel driving circuit according to an exemplary embodiment of the present invention. Referring to Fig. 7', in the present embodiment, the crystal element of the [Deuterium drive circuit] is, for example, a depleted or lift type transistor. The difference between the pixel drive circuit 700 of the present embodiment and the pixel drive circuit 200 of FIG. 2 is that, for example, the second drive unit 72 of the present embodiment receives a reference voltage Vref in addition to receiving the data voltage vDATA. Make sure that when driving the transistor D; for the lift type transistor, the drive transistor Τ1 can be kept in the off state during the setting period, so that the threshold voltage information of the drive transistor can be memorized in the storage capacitor CST or the set capacitor. Among the cSET. In detail, in the present embodiment, one source/drain of the transistor T4 receives the material voltage vDATA and the reference voltage vREF (Vdata+Vref). Therefore, when the control signal CH is at the high level, the transistor τ4 is turned on, thereby providing the voltage Vdata+VreF to the node η. In addition, one source/no pole of the transistor Τ5 receives only the data voltage VDATA. Therefore, under this design architecture, when the node ~ discharges during the set period, its voltage can still be higher than the data voltage VDATA, and until the voltage of the node ηι is equal to the threshold voltage vT plus the data voltage vDATA (VT+VDATA). Stop discharging. At this time, the threshold voltage information of the driving transistor 1 is memorized in the storage capacitor Cst or the set capacitor Cset. Therefore, in the present embodiment, the appropriate design allows the pixel driving circuit composed of the depletion type or the lifting type transistor element to operate normally and compensate the threshold voltage of the driving transistor. 201203199
^iyuwf.doc/I 另外,本實施例的畫素驅動電路700與圖2入的畫素驅 ,電路200相同或相似的部份,可以由圖2A〜圖3的|ΐ例實 把例之敘述中獲致足狗的教示、建議與實施說明,因 再贅述。 在上述實施例中,畫素驅動電路200、700的電晶體元 件例如皆為η型電晶體,但本發明並不限於此。在其他實施 例中’晝素驅動電路的電晶體元件也可以例如皆為ρ型電晶 • 體。 -立圖8Α為本發明一範例實施例之晝素驅動電路的方塊 不意圖。圖8Β為圖8Α之調整單元的電路示意圖。請參考 圖8Α及圖8Β ’本實施例之晝素驅動電路800適於驅動一 發光几件I),其包括一第一驅動單元81〇、一第二驅動單 兀820、一調整單元83〇及一儲存電容cst。 在此’調整單元830包括設定電容CSET及電晶體τ2, 其串聯輕接於第一驅動單元810與第二驅動單元820之 間調整單元830之一端由節點ηι耦接至驅動電晶體Τι 的閘極,且調整單元830之另一端由節點n2耦接至驅動電 晶體τι之另一源/汲極。 類似地’本實施例之調整單元830可用以調整驅動電 a曰體T!的閘極電壓(亦即節點叫的電壓)。因此,在本實施 =中’藉由調整單元830的作用,晝素驅動電路8〇〇可補 仏驅動電晶體τι臨界電壓的不均勻或漂移,以提供發光元 件D較均勻的電流。 值得注意的是,在本實施例中,調整單元830的之一 17 201203199^iyuwf.doc/I In addition, the pixel driving circuit 700 of the present embodiment is the same as or similar to the pixel driving circuit 200 of FIG. 2, and can be exemplified by the example of FIG. 2A to FIG. In the narrative, the instructions, suggestions and implementation instructions for the dog are given. In the above embodiment, the transistor elements of the pixel driving circuits 200, 700 are, for example, n-type transistors, but the present invention is not limited thereto. In other embodiments, the transistor elements of the [deuterium drive circuit may also be, for example, p-type electro-crystal bodies. - Figure 8 is a block diagram of a pixel drive circuit of an exemplary embodiment of the present invention. Figure 8 is a circuit diagram of the adjustment unit of Figure 8A. Referring to FIG. 8A and FIG. 8A, the pixel driving circuit 800 of the present embodiment is adapted to drive a light-emitting component I, which includes a first driving unit 81A, a second driving unit 820, and an adjusting unit 83. And a storage capacitor cst. Here, the adjustment unit 830 includes a set capacitor CSET and a transistor τ2 connected in series between the first driving unit 810 and the second driving unit 820. One end of the adjusting unit 830 is coupled to the gate of the driving transistor 由 by the node ηι The other end of the adjusting unit 830 is coupled to the other source/drain of the driving transistor τ1 by the node n2. Similarly, the adjusting unit 830 of the present embodiment can be used to adjust the gate voltage (i.e., the voltage called the node) of the driving electric body T!. Therefore, in the present embodiment, by the action of the adjusting unit 830, the pixel driving circuit 8 can compensate for the unevenness or drift of the threshold voltage of the driving transistor τ1 to provide a relatively uniform current of the light-emitting element D. It is worth noting that in the present embodiment, one of the adjustment units 830 17 201203199
►c/I 端,經由節點n2連接至發光元件D的陰極,而發光元件D 的陽極則耦接至控制訊號VH(第五控制訊號)。 進一步而言,第一驅動單元810包括驅動電晶體t 及電晶體A。電晶體丁3之閘極受控於控制訊號EM。電晶 體I之一源/汲極耦接至地(第二電壓卜電晶體a之另一 汲極耦接至驅動電晶體丁]之一源/汲極。另外,驅動電 晶體T!之另一源/汲極經由節點耦接至發光元件D之陰 極0 第二驅動單元820包括電晶體丁4及丁5。電晶體丁4之 閘極受控於控制訊號CHe電晶體八之一源/汲極接收資料 電壓Vdata。電晶體TV之另一源/汲極耦接至驅動電晶體 Τι之閘極。電晶體1之閘極受控於控制訊號SETe電晶體 A之一源/汲極接收資料電壓Vdata。電晶體丁5之另一源/ 汲極耦接至驅動電晶體Tl及電晶體τ3之源/汲極。 圖9為圖8Α之晝素驅動電路的各控制訊號的驅動時 序圖。請參考圖8Α、圖8Β及圖9,在本實施例中,晝素 驅動電路800的電晶體元件例如皆為ρ型電晶體,且調整 單元830的兩端分別連接至節點〜與巧。 以圖9的控制訊號的驅動時序為例,本實施例之晝素 驅動電路800可分為以下數個操作階段: (1)預充電期間: 首先,在預充電期間Ρ1中’控制訊號CH、VH及SET 為向準位’因此資料電壓VDATA可經由電晶體τ4設定至節點 ηι ’並經由發光元件D的供電,節點η2的電壓可設定至較節The ?c/I terminal is connected to the cathode of the light-emitting element D via the node n2, and the anode of the light-emitting element D is coupled to the control signal VH (fifth control signal). Further, the first driving unit 810 includes a driving transistor t and a transistor A. The gate of the transistor D is controlled by the control signal EM. One source/drain of the transistor I is coupled to one source/drain of the ground (the other of the second voltage transistor a is coupled to the driving transistor). In addition, driving the transistor T! A source/drain is coupled to the cathode of the light-emitting element D via a node. The second driving unit 820 includes transistors 4 and 4. The gate of the transistor 4 is controlled by a source of the control signal CHe transistor. The drain receives the data voltage Vdata. The other source/drain of the transistor TV is coupled to the gate of the driving transistor 。. The gate of the transistor 1 is controlled by the source/drain receiving of the control signal SETe transistor A. The data voltage Vdata. The other source/drain of the transistor D is coupled to the source/drain of the driving transistor T1 and the transistor τ3. FIG. 9 is a driving sequence diagram of the control signals of the pixel driving circuit of FIG. Referring to FIG. 8A, FIG. 8A and FIG. 9, in the embodiment, the transistor elements of the pixel drive circuit 800 are both p-type transistors, and the two ends of the adjustment unit 830 are respectively connected to the nodes. Taking the driving timing of the control signal of FIG. 9 as an example, the pixel driving circuit 800 of this embodiment can be divided into the following operations. Stage: (1) Pre-charging period: First, during the pre-charging period Ρ1, 'control signals CH, VH and SET are in the right direction', so the data voltage VDATA can be set to the node ηι' via the transistor τ4 and via the light-emitting element D Power supply, the voltage of node η2 can be set to the section
201203199 34iyitwf.doc/I 點〜的電壓為高。另外,控制訊號EM在此階段為低準位, 以減少額外的漏電路徑。 (2)設定期間: —在設定期間P2中,控制訊號CH及VH為低準位,使得 節點η 1成為浮接狀態,且節點叱的電壓不會受到發光元件d 充電。控制訊號ΕΜ亦為低準位,因而阻絕了接地的路徑。 在設定期間Ρ2中,由於控制訊號SET為高準位, 電壓會透過調整單元230的電晶體了2、電容‘及電晶 1體 A放電,直至節點〜的電壓等於臨界電壓知上資料 = VDATA (Vt+VDAtA)時才停止放電。此時,由於驅動電 日日體t為關閉’進而阻止節點〜放電。因此,驅動電 二的臨界電壓資訊即被記憶在儲存電容cST或設定電曰容 CSET之中。 〜电合 (3)發光期間: 啟電= 光期間:中’控制訊細,為高準位,而開 啟電4Τ3 ’以提地路徑給發光元件d。此外 變化影響弱細的雜值郎避切叫的電壓 資訊電晶郎的臨界電壓 本貫施例中,即使晝素驅動電 °疋乂,在 時,驅動電晶體T1的臨界電電乏型電晶體組成 另休,士杳^ 冤壓補償功能仍可正常運作。 她列的晝素驅動電路_與圖2A的晝素驅 19201203199 34iyitwf.doc/I The voltage of point ~ is high. In addition, the control signal EM is at a low level at this stage to reduce the extra leakage path. (2) Setting period: - In the setting period P2, the control signals CH and VH are at a low level, so that the node η 1 is in a floating state, and the voltage of the node 不会 is not charged by the light-emitting element d. The control signal ΕΜ is also at a low level, thus blocking the path of the ground. In the setting period Ρ2, since the control signal SET is at a high level, the voltage is transmitted through the transistor 2 of the adjusting unit 230, and the capacitor 'and the transistor 1 body A are discharged until the voltage of the node 〜 is equal to the threshold voltage. Discharge is stopped only when (Vt+VDAtA). At this time, since the driving electric day body t is turned off, the node ~ discharge is prevented. Therefore, the threshold voltage information of the driving power is memorized in the storage capacitor cST or the set capacitance CSET. ~Electricity (3) Illumination period: Power-on = Light period: Medium 'Control signal is high level, and power is turned on 4Τ3' to lift the ground path to the light-emitting element d. In addition, the variation affects the weakly-triggered value of the voltage value of the singularity of the singularity of the voltage. In the present embodiment, even if the halogen drive is electrically, the critical electric-powered transistor that drives the transistor T1 is composed. Another rest, the gentry ^ pressure compensation function can still operate normally. Her list of elementary drive circuits _ and the prime drive of Figure 2A 19
201203199 c/I 動電路2GG相同或相似的部份,可以由圖2A〜圖3的範例實 施例之敘述帽致足_教示、建議與實施說明,因此不 再贅述。 類似地’在本發明之範例實施例中,當晝素驅動電路 的電晶體it件皆為空乏型電晶體時,晝素驅動電路可正常 運作並補償驅動電晶體_界電壓變異,但本發明並不限 於此。在其他實施财,當晝素驅動電路的電晶體元件係 由空乏型或提升型電晶體所組成時,晝素驅動電路仍可正 常運作並補償驅動電晶體的臨界電壓變異。 圖10為本發明一範例實施例之畫素驅動電路 示意圖。請參考_,在本實施财,除了電晶體元件例 如皆為P型電晶體外,晝素驅動電路麵的電晶體元件例如 是空乏型或提升型電晶體。 本實施例之畫素驅動電路1000與圖8A之晝素驅動電 路800之間的差異例如在於,本實施例之第二驅動單元1〇2〇 除了接收資料電壓vDATA以外,更接收一參考電壓Vref,以 確保當驅動電晶體Ti為提升型電晶體時,在設定期間的驅 動電晶體丁!仍可保持在關閉狀態,進而使得驅動電晶體1 的臨界電壓資訊可被記憶在儲存電容Cst或設定電容Cset 之中。 因此,在此設計架構之下,當節點〜在設定期間放電 時其電壓仍可尚於資料電壓vdata,而直至節點⑴的電壓 等於臨界電壓ντ加上資料電壓vDATA (Vt+Vdata)時才停止 放電。此時,驅動電晶體^的臨界電壓資訊即被記憶在儲 20201203199 c/I The same or similar parts of the moving circuit 2GG can be explained by the description of the exemplary embodiment of Figs. 2A to 3, and will not be described again. Similarly, in the exemplary embodiment of the present invention, when the transistor components of the pixel driving circuit are all depleted transistors, the pixel driving circuit can operate normally and compensate the driving transistor_boundary voltage variation, but the present invention Not limited to this. In other implementations, when the transistor component of the halogen drive circuit is composed of a depleted or lifted transistor, the halogen drive circuit can still operate normally and compensate for the critical voltage variation of the drive transistor. FIG. 10 is a schematic diagram of a pixel driving circuit according to an exemplary embodiment of the present invention. Please refer to _. In this implementation, except that the transistor elements are, for example, P-type transistors, the transistor elements on the surface of the halogen drive circuit are, for example, depleted or lifted transistors. The difference between the pixel drive circuit 1000 of the present embodiment and the pixel drive circuit 800 of FIG. 8A is, for example, that the second drive unit 1〇2 of the present embodiment receives a reference voltage Vref in addition to receiving the data voltage vDATA. In order to ensure that when the driving transistor Ti is a lift-type transistor, the driving transistor during the setting period can still be kept in the off state, so that the threshold voltage information of the driving transistor 1 can be memorized in the storage capacitor Cst or set. Among the capacitors Cset. Therefore, under this design architecture, when the node ~ discharges during the set period, its voltage can still be above the data voltage vdata, and stops until the voltage of the node (1) is equal to the threshold voltage ντ plus the data voltage vDATA (Vt+Vdata). Discharge. At this time, the threshold voltage information of the driving transistor ^ is memorized in the memory 20
201203199 ^Hiyuwf.doc/I 存電容cST或設定電容cSET之中。 所以’在本實施例中,透過適當的設計,可使得由空 乏型或提升型電晶體元件所組成的晝素驅動電路,均可正 常運作並補償驅動電晶體的臨界電壓。 另外,本實施例的畫素驅動電路1000與圖8A的畫素驅 動電路800相同或相似的部份,可以由圖8A〜圖9的範例實 施例之敘述中獲致足夠的教示、建議與實施說明,因此不 再贅述。 圖11為本發明一範例實施例之晝素驅動方法的步驟 流程圖。請參照圖2A〜圖3及圖11,本實施例之晝素驅動 方法包括如下步驟。 在步驟S11〇〇中,藉由第二驅動單元220,提供資料 電壓Vdata至驅動電晶體,以使第一驅動單元210依據 資料電壓VDATA驅動發光元件D。亦即,在預充電期間pi, 分別將調整單元230之第一端(節點ηι)及第二端(節點n2) 充電至資料電壓VDATA及高準位電壓Vdd。 在步驟S1.102中’藉由調整單元230,調整驅動電晶 體t的閘極電壓。亦即,在設定期間p2,藉由第二驅動 早元220及調整單元230 ’使調整單元230之第一端放電, 以補償驅動電晶體1的臨界電壓值。 在步驟S1104中,藉由第一驅動單元21〇,驅動發光 疋件D。亦即,在發光期間P3,依據設定電容CsET所記 憶的驅動電晶體Τ】的臨界電壓值,開啟驅動電晶體Τι, 以藉由高準位電壓Vdd驅動發光元件D。 21 201203199 另外,本發明之實施例的晝素驅動方法可以由圖2a_ 圖10的範例實施例之敘述中獲致足夠的教示、建議斑祐 說明,因此不再贅述。 /、貫& 综上所述,在本發明之範例實施例中,晝素驅動電路 及晝素驅動方法可用以補償驅動電晶體臨界電壓的不 或漂移,以提供發光元件較均勻的電流。另外,在本4 = 之範例實施例中,無論晝素驅動電路以何種型熊 組成’驅動電晶體的臨界電壓補償功能皆可正曰體 雖然本發明已以實施例揭露如上,然其並非用以限定 t明’任何所屬技術領域中具有通常知識者,在不 發明圍内,當可作些許之更動與潤飾,故本 發月之保魏圍當視後附之中請專職_界定者為準。 【圖式簡單說明】 路。圖1緣示習㈣轉決臨界f壓變異的晝素驅動電 示音^ 2A為本發明一範例實旅例之晝素驅動電路的方塊 圖2B為圖2A之調整單元的電路示意圖。 序圖 圖3為圖2A之畫素驅動電路的各控制訊號的驅動時 係圖 為^知的畫素驅動電路之輸出電流對資料電塵關 圖5為圖2A的晝素驅動電路之輸出電流對資料電壓 22 201203199 34iyitwf.doc/I 關係圖。 圖6為圖2A的畫素驅動電路與習知的晝素驅動電路 之輸出電流的均勻性比較關係圖。 圖7為本發明一範例實施例之晝素驅動電路的方塊示 意圖。 圖8A為本發明一範例實施例之晝素驅動電路的方塊 示意圖。 圖8B為圖8A之調整單元的電路示意圖。 ® 圖9為圖8A之晝素驅動電路的各控制訊號的驅動時 序圖。 圖10為本發明一範例實施例之畫素驅動電路的方塊 示意圖^ 圖11為本發明一範例實施例之晝素驅動方法的步驟 流程圖。 【主要元件符號說明】 # 200、700、800、1000 :晝素驅動電路 210、710、810、1〇1〇 :第一驅動單元 220、720、820、1020 :第二驅動單元 230、730、830、1030 :調整單元 丁2〜T5 ·電晶體 SW1〜SW3 :開關電晶體 DTFT、1 :驅動電晶體 CSET :設定電容 23201203199 ^Hiyuwf.doc/I Storage capacitor cST or set capacitor cSET. Therefore, in the present embodiment, the appropriate driving design allows the pixel driving circuit composed of the depletion type or the lifting type transistor element to operate normally and compensate the threshold voltage of the driving transistor. In addition, the same or similar parts of the pixel driving circuit 1000 of the present embodiment and the pixel driving circuit 800 of FIG. 8A can obtain sufficient teaching, suggestion and implementation instructions from the description of the exemplary embodiments of FIGS. 8A to 9. Therefore, I will not repeat them. FIG. 11 is a flow chart showing the steps of a method for driving a pixel in an exemplary embodiment of the present invention. Referring to FIG. 2A to FIG. 3 and FIG. 11, the pixel driving method of this embodiment includes the following steps. In step S11, the data voltage Vdata is supplied to the driving transistor by the second driving unit 220, so that the first driving unit 210 drives the light emitting element D according to the data voltage VDATA. That is, during the pre-charging period pi, the first end (node ηι) and the second end (node n2) of the adjusting unit 230 are respectively charged to the data voltage VDATA and the high-level voltage Vdd. In step S1.102, the gate voltage of the driving transistor t is adjusted by the adjusting unit 230. That is, during the set period p2, the first end of the adjusting unit 230 is discharged by the second driving early element 220 and the adjusting unit 230' to compensate for the threshold voltage value of the driving transistor 1. In step S1104, the light-emitting element D is driven by the first driving unit 21A. That is, during the light-emitting period P3, the driving transistor 开启 is turned on in accordance with the threshold voltage value of the driving transistor 记 remembered by the set capacitance CsET to drive the light-emitting element D by the high-level voltage Vdd. 21 201203199 In addition, the pixel driving method of the embodiment of the present invention can obtain sufficient teachings and suggestions from the description of the exemplary embodiments of FIGS. 2a to 10, and therefore will not be described again. In summary, in an exemplary embodiment of the present invention, the pixel drive circuit and the pixel drive method can be used to compensate for the drift of the threshold voltage of the drive transistor to provide a relatively uniform current of the light-emitting element. In addition, in the exemplary embodiment of the present invention, the threshold voltage compensation function of the driving transistor can be positively applied regardless of the type of the bear drive circuit. Although the present invention has been disclosed in the above embodiments, it is not It is used to define the knowledge of any technical field in the technical field. If you do not invent the area, you can make some changes and retouching. Prevail. [Simple description of the map] Road. Fig. 1 is a circuit diagram of the adjustment unit of Fig. 2A. Fig. 2B is a circuit diagram of the adjustment unit of Fig. 2A. FIG. 3 is a driving diagram of the control signals of the pixel driving circuit of FIG. 2A. The output current of the pixel driving circuit is the data current dust. FIG. 5 is the output current of the pixel driving circuit of FIG. 2A. For the data voltage 22 201203199 34iyitwf.doc / I diagram. Fig. 6 is a graph showing the comparison of the uniformity of the output current of the pixel driving circuit of Fig. 2A and the conventional pixel driving circuit. Figure 7 is a block diagram of a pixel drive circuit in accordance with an exemplary embodiment of the present invention. FIG. 8A is a block diagram of a pixel driving circuit according to an exemplary embodiment of the present invention. FIG. 8B is a circuit diagram of the adjusting unit of FIG. 8A. ® Figure 9 is a drive timing diagram of the control signals of the pixel drive circuit of Figure 8A. FIG. 10 is a block diagram of a pixel driving circuit according to an exemplary embodiment of the present invention. FIG. 11 is a flow chart showing the steps of a pixel driving method according to an exemplary embodiment of the present invention. [Main component symbol description] #200, 700, 800, 1000: The pixel drive circuit 210, 710, 810, 1〇1〇: the first drive unit 220, 720, 820, 1020: the second drive unit 230, 730, 830, 1030: adjustment unit D2~T5 · Transistor SW1~SW3: Switching transistor DTFT, 1: Driving transistor CSET: Setting capacitor 23
201203199 c/I cST:儲存電容 OLED:有機發光二極體 D:發光元件201203199 c/I cST: storage capacitor OLED: organic light-emitting diode D: light-emitting element
Vdata :資料電壓 VT :臨界電壓Vdata: data voltage VT: threshold voltage
Vref :參考電壓Vref: reference voltage
Vdd ·電壓 ηι、Π2 :節點 £M、CH、SET、VL、VH :控制訊號 · TNO、SLT、CTD、DT :訊號 P1 :預充電期間 P2:設定期間 P3 :發光期間 Ή、T2 :週期 S1100、S1102、S1104 :晝素驅動方法步驟 24Vdd · Voltage ηι, Π2: Nodes £M, CH, SET, VL, VH: Control signal · TNO, SLT, CTD, DT: Signal P1: Precharge period P2: Set period P3: Illumination period Ή, T2: Period S1100 , S1102, S1104: Alizarin driving method step 24
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| TW99122173A TWI423214B (en) | 2010-07-06 | 2010-07-06 | Pixel driving circuit and pixel driving method |
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| TW99122173A TWI423214B (en) | 2010-07-06 | 2010-07-06 | Pixel driving circuit and pixel driving method |
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| TW201203199A true TW201203199A (en) | 2012-01-16 |
| TWI423214B TWI423214B (en) | 2014-01-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607429B (en) * | 2016-02-01 | 2017-12-01 | 矽創電子股份有限公司 | Driving Method for Display Device and Related Driving Device |
| TWI682381B (en) * | 2018-10-17 | 2020-01-11 | 友達光電股份有限公司 | Pixel circuit, display device and pixel circuit driving method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491334B (en) * | 2019-08-30 | 2021-07-23 | 上海中航光电子有限公司 | Pixel circuit, driving method of pixel circuit, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1158483A3 (en) * | 2000-05-24 | 2003-02-05 | Eastman Kodak Company | Solid-state display with reference pixel |
| KR20070101275A (en) * | 2004-12-15 | 2007-10-16 | 이그니스 이노베이션 인크. | Methods and systems for programming, calibrating, and driving light emitting devices |
| KR100604066B1 (en) * | 2004-12-24 | 2006-07-24 | 삼성에스디아이 주식회사 | Pixel and light emitting display device using same |
| TWI348677B (en) * | 2006-09-12 | 2011-09-11 | Ind Tech Res Inst | System for increasing circuit reliability and method thereof |
| JP5151172B2 (en) * | 2007-02-14 | 2013-02-27 | ソニー株式会社 | Pixel circuit and display device |
| GB0721567D0 (en) * | 2007-11-02 | 2007-12-12 | Cambridge Display Tech Ltd | Pixel driver circuits |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607429B (en) * | 2016-02-01 | 2017-12-01 | 矽創電子股份有限公司 | Driving Method for Display Device and Related Driving Device |
| US10885867B2 (en) | 2016-02-01 | 2021-01-05 | Sitronix Technology Corp. | Driving method for display device and related driving device |
| TWI682381B (en) * | 2018-10-17 | 2020-01-11 | 友達光電股份有限公司 | Pixel circuit, display device and pixel circuit driving method |
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| Publication number | Publication date |
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| TWI423214B (en) | 2014-01-11 |
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