TW201202856A - Composition for forming resist underlayer film and pattern forming method - Google Patents

Abstract

A composition for forming a resist underlayer film, from which a resist underlayer film having excellent etching resistance and so on can be formed, comprising at least one member selected from the group consisting of photopolymerizable compounds represented by general formula (1) and general formula (2) together with a solvent. In general formulae (1) and (2), R11, R12 and R13 represent a hydrogen atom, etc.; R3 represents an n1-valent group derived from an aromatic compound; R4 represents a hydrogen atom, etc.; R5 represents a monovalent organic group derived from an aromatic compound; R6 represents an n2-valent organic group; X represents -COO-* [wherein * represents a bond binding to R6], etc.; n1 represents an integer of 2 to 4; and n2 represents an integer of 2 to 10.

Description

201202856 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a composition for forming a resist underlayer film. More specifically, it relates to a composition for forming a resist underlayer film which can form a resist underlayer film which can maintain the standing wave preventing effect on the one hand, and which has elasticity and high etching resistance. [Prior Art] Integrated circuit component In the manufacturing method, in order to obtain a higher degree of bulk, the processing size of the multilayer photoresist process is progressed to be finer. In the process, the liquid resist underlayer film forming composition is first applied onto a substrate to form a resist underlayer film (hereinafter sometimes simply referred to as "lower layer film"), and then liquid light is further applied onto the underlayer film. The composition is blocked to form a photoresist film. Next, after the photoresist film is exposed using a reduced projection exposure apparatus (stepper), a photoresist pattern is obtained by imaging. Subsequently, the photoresist pattern is transferred onto the resistive underlayer film by dry etching. Next, the resist-substrate film to which the photoresist pattern is transferred is transferred onto the substrate by dry etching, whereby a substrate having a desired pattern can be obtained. Therefore, the case of using a resist underlayer film is called a two-layer resist process, and the case of using two is called a three-layer resist process. The anti-hungry underlayer film generally functions as an anti-reflection film that absorbs radiation reflected from the substrate. Further, the underlayer film formed on the substrate directly above is often formed of a material having a large carbon content (a composition for forming a resist underlayer film). This is because when the carbon content is large, the etching resistance during substrate processing is improved, so that the pattern can be transferred more accurately. The underlying film type having a large amount of carbon is used. The composition of the composition is particularly known as a resin containing a thermosetting phenol novolak resin or a polymer having an acenaphthylene skeleton (see, for example, Patent Document 1). And 2). Further, as a composition for forming a resist underlayer film, a resin containing a thermosetting phenol novolak resin or the like is known as a resin containing a photopolymerizable compound (see, for example, Patent Document 3). [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2000-143937 [Patent Document 2] JP-A-2001-40293 [Patent Document 3] International Publication No. 2006/1 1 5044 [Invention [Problem to be Solved by the Invention] However, the composition for forming a resist underlayer film described in Patent Documents 1 and 2 has a pattern of the underlying film pattern when the pattern is transferred from the resist underlayer film to the substrate by etching. Such defects may cause problems in that the pattern cannot be transferred to the substrate well. In particular, in recent years, as integrated circuit components have progressed toward miniaturization, there has been a problem of defects caused by bending of the film pattern or the like due to the aforementioned heat. Here, the reason for the lower film pattern is considered to be that the cross-linking of the resins is insufficient, so that the elastic modulus of the under-layer film is insufficient. In addition, the composition for forming a resist underlayer film described in Patent Document 3 contains a photopolymerizable compound, but the purpose is to obtain a material having low etching resistance, and a material different from the resist underlayer film of the present invention is disclosed in -6-201202856. . The present invention has been made in order to solve the problems of the prior art as described above. The object of the present invention is to provide a resist underlayer film capable of forming a resist underlayer film which can maintain the standing wave preventing effect on the one hand and has high modulus of elasticity and etching resistance. A composition for formation. [Means for Solving the Problems] The present inventors have found that the above-mentioned problems can be attained by photopolymerization of a compound having a specific structure to achieve the above-mentioned problems, and the present invention has been completed. According to the present invention, there is provided a composition for forming a resist underlayer film, which comprises (A) a photopolymerizable compound represented by the following formula (1); And at least one photopolymerizable compound selected from the group consisting of the photopolymerizable compounds represented by the general formula (2), and (B) a solvent, wherein R3 to ~fcR11 2 = CR12R131 (1) 1 Jn1 (In the formula (1), R11 to R13 independently of each other represent a monovalent group derived from an aromatic compound, a hydrogen atom, an alkyl group having 1 to 1 carbon number, and a cycloalkyl group having 3 to 20 carbon atoms. , nitro, cyano, -COR2, -COOR2 or -CON(R2)2 (but -COR2, -c〇〇R2 and -CON(R2)2, R2 independently represent a hydrogen atom, carbon number 1~ 10 alkyl, carbon 3 to 20 0 cycloalkyl or a monovalent organic group derived from aromatic compound 201202856, may also have a substituent), but R1 LR13 is a monovalent derived from an aromatic compound Base, nitro, cyanide 3 COR2, -COOR2 or -CON(R2)2, R3 represents an nl valent organic group derived from a fragrant compound which may have a substituent, and nl represents an integer of 2 to 4) R6 2] a [-X-CR4 = CR4R5 (2)

Jn2 (In the formula (2), R4 independently represents a monovalent organic group derived from an aromatic compound, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a carbon number of 3 to a cycloalkyl group, a nitro group, and a cyano group. , -COR7'-COOR7 or -CON(R7)2 in COR7, -COOR7 or -CON(R7)2, R7 independently of each other represents hydrogen, an alkyl group having 1 to 10 carbon atoms, and a ring having a carbon number of 3 to 2 0 An alkyl group or a monovalent organic group derived from aromatization may have a substituent), R5 represents a monovalent organic group derived from an aromatic compound, R6 represents an organic group, and X represents a -COO -* or -CONH-* ("*" means the key with which it is connected), and n2 means an integer of 2 to 10). [2] The composition for forming a resist underlayer film according to the above [1], wherein the photopolymerizable compound represented by the formula (1) is a compound represented by the following 1_1), and the above formula (2) The photopolymer represented by the following formula is a compound represented by the formula (2-1), wherein any 'k ' _ is derived from aryl (but the oxy compound has an n2 ' bond)化-8 - 201202856 【化3】 0

(1-1) n1 (In the formula (1-1), R1 independently represents a hydrogen atom or a cyano group, and r2 independently represents a hydrogen atom, an alkyl group having 1 to 1 carbon number, and a carbon number of 3 to 20 The cycloalkyl group or the monovalent organic group derived from the aromatic compound may have a substituent, R3 represents a nl valent organic group derived from an aromatic compound which may have a substituent, and nl represents an integer of 2 to 4) , [化4] 6

I n2 (in the formula (2-1), R41 independently represents a hydrogen atom or a cyano group] R6 represents an n2 valent hydrocarbon group, n2 represents an integer of 2 to 10, RP represents a substituent, and nP represents an integer of 0 to 5) . [3] The composition for forming a resist underlayer film according to the above [1], wherein the photopolymerizable compound represented by the formula (1) is represented by the following formula (1-11) Compound, -9 - 201202856 [Chemical 5]

(In the formula (I), R1 independently of one another represents a hydrogen atom independently of each other, and a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a carbon alkyl group or a monovalent organic group derived from an aromatic compound. Base, nl represents an integer of 2 to 4). [4] The composition for a resist according to any one of the above-mentioned [1], wherein the photopolymer represented by the formula (1) is represented by the following formula (1-111). Compound,

(In the formula (1-111), R1 independently of each other means that the hydrogen atom R2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group or a monovalent organic group derived from an aromatic compound. , substituent). [5] A pattern forming method, comprising the following steps: the resisting underlayer according to any one of the above [1] to [4]

The coating is applied to the substrate to be processed to form a coating film of the coating film J-10-cyano group, and the ring of R2 3 to 20 may have a film forming compound (1-111) or a cyano group, the number 3~ 20 may also have a forming group step; by 201202856, the coating film is irradiated with radiation to form the coating film to be hardened, and a step of forming a lower layer film under the resist underlayer film is formed on the substrate to be processed; a resist film forming step of applying a resist composition on the underlayer film and drying it to form a resist film; and exposing the resist film to radiation to expose the resist film; Forming a pattern of the resist pattern formed by exposure to form a resist pattern having a specific pattern; and etching the underlayer film and the substrate to be processed by using the resist pattern as a mask An etching step of the same pattern as the specific pattern described above is formed on the substrate to be processed. [Effect of the invention] The composition for forming a resist underlayer film of the present invention is selected from the group consisting of a photopolymerizable compound represented by the formula (1) and a photopolymerizable compound represented by the formula (2). Since at least one photopolymerizable compound is strong at the time of irradiation, the crosslinked structure formed by the polymerization reaction of the compounds is formed, so that the standing wave preventing effect can be maintained, and on the one hand, the elastic modulus and the etching resistance can be maintained. High anti-corrosion underlayer film. According to the pattern forming method of the present invention, a coating film forming step of forming a composition for forming a resist underlayer film on a substrate to be processed is formed, and a radiation film is applied to the formed coating film to form a coating film. The step of forming the underlayer film under the resist underlayer film is formed on the substrate to be processed, so that the elastic modulus of the formed underlayer film is increased, and defects such as pattern bending are effectively prevented. Therefore, a good pattern can be formed on the substrate to be processed. -11 - 201202856 [Embodiment] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited by the following embodiments. That is, those skilled in the art can appropriately modify, improve, and the like according to the general knowledge, without departing from the spirit and scope of the invention, and it should be understood that these are within the scope of the invention. The "substituent" in the present specification is not particularly limited, and examples thereof include -RS1, .Rs2-〇-Rsl, -RS2-C0-RS1, -RS2-C0-0RS1, -RS2-0-C0-Rsl, -Rs2-OH, -RS2-COOH '-RS2-CN, -RS2-NH2, -RS2-NRS12, and the like. However, RS1 independently of each other represents an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms or an aryl group having 6 to 30 carbon atoms, and some or all of the hydrogen atoms of the groups may be Substituted by a fluorine atom. RS2 independently of each other represents a single bond, an alkylene group having 1 to 10 carbon atoms, a cycloalkanediyl group having 3 to 20 carbon atoms, a aryl group having 6 to 30 carbon atoms, or a hydrogen atom of the group a part or all of a group substituted by a fluorine atom. Further, the "having a substituent" means having one or more of the above-mentioned respective substituents, or having a plurality of the above-mentioned substituents. [1] The composition for forming a resist underlayer film, the composition for forming a resist underlayer film of the present invention contains (A) a photopolymerizable compound represented by the above formula (1) and the above formula (2) And at least one photopolymerizable compound selected from the group consisting of photopolymerizable compounds, and (B) a solvent. Since the composition for forming a resist underlayer film contains the (A) photopolymerizable compound, the crosslinked structure formed by the polymerization reaction of the compound such as -12-201202856 is strong when exposed to light, and thus it is possible to be strong. The standing wave prevention effect is maintained, and on the one hand, the elastic modulus and the etching resistance are improved. According to this, when the composition for forming a resist underlayer film is used, a resist underlayer film which is not easily bent in a pattern can be formed. [1-1] (A) Photopolymerizable compound: The photopolymerizable compound represented by the formula (1) and the photopolymerizable compound represented by the formula (2) are each a carbon-carbon double bond by irradiation Recombines with other carbon-carbon double bonds to form a cyclobutane ring compound. In other words, by containing the photopolymerizable compound (A), the (A) photopolymerizable compound is strongly crosslinked by two carbon-carbon bonds in the underlayer film to form a crosslinked structure. According to this, a hard underlayer film can be formed by using these compounds ((A) photopolymerizable compound). Here, the conventional composition for forming a lower resist layer is formed into a crosslinked structure in a resist underlayer film by using a crosslinking agent or the like. However, since the crosslinked structure is composed of a single bond, the bonding strength is not Full (insufficient binding). Therefore, the pattern is bent during etching (resulting in so-called pattern bending). On the other hand, it is considered that the crosslinked structure formed by the above (A) photopolymerizable compound is stronger than the one formed by the single bond, so that a hard underlayer film is obtained, and the pattern at the time of etching is not obtained. Will bend. One of the valent groups derived from the aromatic compound represented by R11 to R13 in the formula (1) is a group obtained by removing one hydrogen atom from an aromatic hydrocarbon having 6 to 10 carbon atoms. Examples of the aromatic hydrocarbons include aromatic hydrocarbons such as benzene and naphthalene; nitrogen-containing aromatic-13-201202856 hydrocarbons such as pyrrole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, and anthracene; and oxygen-containing aromatic hydrocarbons such as furan. a sulfur-containing aromatic hydrocarbon such as thiophene. In order to improve etching resistance, it is preferably derived from benzene, naphthalene or a π-based group. Further, one of the valent groups derived from the aromatic compound may have a substituent. In the formula (1), the alkyl group represented by R11 to R13 may be exemplified by methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-octyl, or a linear alkyl group such as dodecyl, n-tetradecyl or n-octadecyl, a branched alkyl group such as isopropyl, isobutyl, tert-butyl or neopentyl '2-ethylhexyl. Among these, a methyl group, an ethyl group, an isopropyl group, and an isobutyl group are preferable. Further, the alkyl group may have a substituent. In the formula (1), the cycloalkyl group having 3 to 20 carbon atoms represented by RH-R13 may, for example, be a cyclohexane, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or a cyclooctyl group. a polycyclic cycloalkyl group such as a tricyclic fluorenyl group, a tetracyclododecyl group, an borneol group or an adamantyl group. The aforementioned cycloalkyl group may have a substituent. The R2 in -COR2, -COOR2, -CON(R2)2 is as described above, and independently of each other is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or an aromatic group. A monovalent organic group derived from a compound. Among these, a hydrogen atom, a methyl group, an ethyl group, an isopropyl group, an isobutyl group, a phenyl group or a pyridyl group is preferred. In the formula (1), the group represented by "-CR" = CR12R13" may be a group represented by the following formulas (a) to (n). Further, in the following general formulae (a) to (n), R21 independently represents a hydrogen atom, an alkyl group having a carbon number or a cycloalkyl group having a carbon number of 3 to 20; R14 represents a valent group derived from an aromatic compound which may have a substituent. R2 is independently a hydrogen atom, an alkyl group having a carbon number of -14 to 201202856 of 1 to 10, a cycloalkyl group having a carbon number of 3 to 20, or a monovalent organic group derived from an aromatic compound. In addition, the wavy line indicates that the bonding direction is not specific. R21 no2 r21 η 14 -C=C—-R14 (b) L. R21 R21 〇Η II 2 -C==CC—OR2 (a) CN R21 -C=C—R14 R21 CN 0 ξ Ml 2 -C=CC——OR2 (c) R21 -C=C——R14 -C=CC_OR2 〇=C-R21 (d) 0 (e) (f) 0 II R21 R21 C——OR2 ξ ^ 2 -C——C——R14 R21 R21 CC c OR^ $ ^ I 0=c-R21 -c=c A 0 (g) (h) (i) In the above general formula (a) to (n), R14 can be exemplified by the same valent group as that derived from the aromatic compound represented by R11 to R13. The aromatic compound N02 RZ1H 14 -C=C - R14(j) R2 R21 R2

-C=C——C——H 0 R2 R21 CN O ξ ? II / -C=CC——N \(1) 0P R21 (T '〇2H 2 -C=CC—-OR2 0(m) ( k) 0 R2

.N R21 C-~c-C-C-II O(n) R2 R2 N. R2 -15- 201202856 One of the valence groups derived from the substance, one of the valent groups derived from the aromatic compound may have a substituent. Among the valent groups derived from the aromatic compounds, a base derived from benzene, naphthalene or pyridine is preferred in order to form a resist underlayer film having high etching resistance. In the above formulae (a) to (n), the alkyl group having 10 carbon atoms or the cycloalkyl group having 3 to 20 carbon atoms represented by R21 can be exemplified as having a carbon number of 1 to 1 represented by the above R2. The alkyl group or the cycloalkyl group having a carbon number of 3 to 20 is the same. In the above, from the viewpoint of easy availability of the raw material, the group represented by the following formula (a-Ι) is preferred. [化8] /R1

——CH=C, C—OR2 (a-1)

II o (In the formula (al), R1 represents a hydrogen atom or a cyano group, and R2 is independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, or an aromatic compound. One of the derived organic groups). In the general formula (1), the n1-valent organic group derived from the aromatic compound represented by R3 may be a group obtained by removing (nl) hydrogen atoms from an aromatic hydrocarbon having 6 to 10 carbon atoms. Examples of the aromatic hydrocarbons include aromatic hydrocarbons such as benzene and naphthalene; nitrogen-containing aromatic hydrocarbons such as pyrrole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, and anthracene; oxygen-containing aromatic hydrocarbons such as furan; and thiophene and the like. Sulfur aromatic hydrocarbons. Among these, in order to form a resist underlayer film having high etching resistance, a group derived from benzene, naphthalene or pyridine is preferred. Further, R3 may have a substituent. In the formula (1), nl is preferably 2 or 3, more preferably ^-16-201202856. Further, the compound represented by the formula (1-1) is "-CRH^ in the above formula (1). The base represented by CRUr13" is a base represented by the above formula (a-Ι). Further, the compound represented by the formula (1-11) is a compound in which R3 in the formula (1-1) is a divalent group derived from benzene. Further, the compound represented by the general formula (1-111) is a compound in which the nl of the formula (1-11) is 2. Specific examples of the photopolymerizable compound represented by the formula (1) include the compounds shown below. 【化9】

-17- 201202856 【化1 〇】

[1 1]

-18- 201202856 【化1 2】

【化1 3】

-19· 201202856 【Chemical 1

Specifically, the compound can be polymerized by the formula (Bu) and the formula shown below.

-20- 201202856 【化1 7】

-21 - 201202856 【化1 8】

Among the above compounds, 'the crosslinking density is improved in order to easily crosslink (formation of a crosslinked structure) by irradiation, and the following compounds are preferred. -22- 201202856 【化1 9】

The photopolymerizable compound represented by the formula (n) can be obtained by, for example, condensing an aromatic ring having a plurality of formazan groups with a cyanoacetate in the presence of a base. In the formula (2), the aromatic group represented by R5 The monovalent organic group derived from the group compound may be exemplified by a valent group derived from an aromatic compound which is the same as a valent group derived from the aromatic compound represented by R11 to R13, which is derived from the aromatic compound The monovalent group may have a substituent. In order to improve the etching resistance, it is preferably a group derived from benzene or pyridine. In the formula (2), an organic compound derived from an aromatic compound represented by R4 The alkyl group having 1 to 1 Å of carbon and the cycloalkyl group having 3 to 20 carbon atoms can be exemplified as a valent group derived from an aromatic compound represented by R11 to R 13 in the formula (1). The alkyl group having 1 to 10 carbon atoms and the cycloalkyl group having 3 to 20 carbon atoms are the same. -23-201202856 The group represented by "-X-CR4 = CR4R5" in the formula (2) can be exemplified as follows. a group represented by the formula (〇) to (z), etc. Further, in the following formula (〇) to (z), R21 independently represents hydrogen An alkyl group having 1 to 1 carbon atom or a cycloalkyl group having 3 to 20 carbon atoms. R5 represents a valent organic group derived from an aromatic compound which may have a substituent. r8 independently represents a hydrogen atom and carbon. The alkyl group of 10, the cycloalkyl group having 3 to 20 carbon atoms, or the monovalent organic group derived from the aromatic compound may have a substituent. Further, the 'wavy line system indicates that the bonding direction is not specific. -24- 201202856 【化2 0】

R8 R8 R8 - N r\

R8——N r\ •N__

(z) (y) Among the above-mentioned compounds, from the viewpoint of easy availability of the raw material, etc., the compound represented by the formula (o-i) is preferably -25 to 201202856. [Chem. 2 1]

〇41 R\

; C=CH —Ο—c ιι ο (o-l) (In the formula (o-i), a hydrogen atom or a cyano group, Rp represents a substituent, and np represents an integer of 0 to 5). In the general formula (2), the n2-valent organic group represented by R6 may be an n2 valent hydrocarbon group. The hydrocarbon group may, for example, be a linear chain derived from methane, ethane, n-propyl, n-butane, n-pentane, n-hexane, n-octane, n-dodecane, n-tetradecane, n-octadecane or the like. a chain hydrocarbon such as an isopropane, isobutane, a third butane, a neopentane or a branched alkane such as 2-ethylhexane; a cyclopropane, a cyclobutane, a cyclopentane, a cyclohexyl group, or a ring; A monocyclic cycloalkane such as octane; a cyclic hydrocarbon such as tricyclodecane, tetracyclododecane, orthotropene or adamantane or the like having a ring-shaped hydrocarbon to remove n 2 hydrogen atoms. The ιι 2 in the formula (2) is preferably from 2 to 8, more preferably from 2 to 6. In addition, the compound represented by the formula (2-1) is a group represented by the above formula (0-1) in the group represented by "_X-CR4 = CR4R5" in the above formula (2). Specific examples of the photopolymerizable compound represented by the formula (2) include the compounds represented by the following (B-1) to (B-5). Among these, in order to form a resist underlayer film having high etching resistance, a compound represented by the formula (B-5) is preferred. -26- 201202856 【化2 2】 (B-1)

-27- 201202856 【化2 3】

(B-4)

(B-5) The photopolymerizable compound represented by the formula (2) can be obtained, for example, by reacting cinnamic acid with a carbon source (e.g., dimethylformamide or alkyl bromide) in the presence of a base. Further, the composition for forming an underlayer film of the present invention may contain the photopolymerizable compound represented by the above formula (1) and the photopolymerizable compound represented by the above formula (2), respectively, and may contain the above-mentioned The photopolymerizable compound represented by the formula (1) and the photopolymerizable compound represented by the above formula (2) are preferably contained, and the photopolymerizable compound represented by the above formula (1) is preferably contained alone. Since the photocrosslinkable portion of the photopolymerizable compound represented by the formula (1) is linked by an aromatic ring, an anti-corrosion underlayer film having high etching resistance can be formed. [1-2] (B) Solvent: (B) The solvent is not particularly limited as long as it dissolves the (A) photopolymerizable compound contained in -28 to 201202856. (B) The solvent is specifically propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, n-butyl acetate, ethyl 3-ethoxypropionate, and the like. Methyl methoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, and the like. (Β) The content of the solvent is preferably from 5 to 80 parts by mass based on 1 part by mass of the total amount of the photopolymerizable compound represented by the formula (1) and the photopolymerizable compound represented by the formula (2). More preferably, it is 5 to 40 parts by mass, preferably 8 to 30 parts by mass. When the content is within the above range, the photopolymerizable compound can be satisfactorily dissolved, and it is preferable that the film thickness of the formed underlayer film is too small to cause a small amount of streaks. [1-3] Additive: The composition for forming a resist underlayer film of the present invention may further contain an additive in addition to the (photo) polymerizable compound and the (Β) solvent. The additives are exemplified by a binder resin, a radiation absorbing agent, a surfactant, a storage stabilizer, an antifoaming agent, a auxiliaries, and the like. The binder resin can be exemplified by various thermoplastic resins or thermosetting resins. The thermoplastic resin is a component having an action of imparting fluidity or mechanical properties to the underlying film to the added thermoplastic resin. Further, the thermosetting resin is insoluble in a solvent by heat curing, and has a function of preventing interaction between the obtained underlayer film and the photoresist film formed thereon, and can be preferably used as a binder resin. . Among these, a thermosetting resin such as a urea resin, a melamine resin or an aromatic hydrocarbon resin is preferable. Further, these binder resins may be used singly or in combination of two to be used on - 29 - 201202856. The amount of the binder resin to be added is preferably 20 parts by mass or less, more preferably 10 parts by mass or less, based on 100 parts by mass of the (A) photopolymerizable compound. When the amount of the above-mentioned compound is more than 20 parts by mass, the binder resin may hinder the polymerization of the (a) photopolymerizable compound. Therefore, there is a possibility that a high-elasticity underlayer film cannot be obtained. Examples of the radiation absorbing agent include dyes such as oil-soluble dyes, disperse dyes, basic dyes, methyne dyes, pyrazole dyes, imidazole dyes, and hydroxy azo dyes; and bixin derivatives; Fluorescent whitening agents such as norbixin, stilbene, 4,4'-diaminostilbene derivatives, coumarin derivatives, pyrazoline derivatives ; UV-based ray dyes such as 'tinuvin 234 (trade name, manufactured by Ciba-Geigy) and Tinuvin 1130 (trade name, manufactured by Ciba-Geigy) An aromatic compound such as an anthracene derivative or an anthracene derivative, etc. These radiation absorbers may be used singly or in combination of two or more. The amount of the radiation absorbing agent to be added is preferably 100 parts by mass or less, more preferably 50 parts by mass or less, based on 1 part by mass of the (A) photopolymerizable compound. When the amount of the above compounding exceeds 100 parts by mass, the photoreaction of the (A) photopolymerizable compound may be inhibited. The surfactant is a component having an effect of improving coatability, streaking property, wettability, and imaging property. Specifically, for example, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octyl phenyl ether, polyoxyethylene n-decyl phenyl ether, polyethyl b. Nonionic surfactant such as diol dilaurate -30- 201202856 or polyethylene glycol distearate, or the following trade name KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), POLYFLOW No. 75, POLYFLOW No. 95 (manufactured by Kyoeisha Oil Chemical Industry Co., Ltd.), EF TOP EF101, EF TOP EF204, EF TOP EF3 03, EF TOP EF3 52 (above TORKEMU PRODUCT), MEGAFAC F171, MEGAFAC F172, MEGAFAC F173 (above is Greater Japan) Ink Chemical Industry Co., Ltd.), FLORARDFC430, FLORARD FC431 FLORARD FC135, FLORARD FC93 (above manufactured by Sumitomo 3M), ASAHIGUARD AG710, SURFLON S- 3 8 2. SURFLON SC 10 1, SURFLON SC 102, SURFLON SC103, SURFLON SC 104 'SURFLON SC 105 ' SURFLON SC106 (above is manufactured by Asahi Glass Co., Ltd.). These interface active agents may be used singly or in combination of two or more. These surfactants may be used alone or in combination of two or more. The amount of the surfactant to be added is preferably 15 parts by mass or less, more preferably 10 parts by mass or less, based on 1 part by mass of the (A) photopolymerizable compound. When the amount of the above compounding exceeds 15 parts by mass, there is a possibility that the surfactant affects the performance of the underlayer film (the performance of the underlayer film is lowered). [2] Pattern forming method: The pattern forming method of the present invention is a method comprising the step of applying the composition for forming a resist underlayer film of the present invention to a substrate to be processed to form a coating film. Step (hereinafter sometimes referred to as "step (1)") "Step of forming a film under the surface of the underlayer film formed by irradiating the formed coating film with radiation to harden the coating film on the processed substrate of -31 - 201202856 (hereinafter referred to as "step (2)"), a resist film forming step of applying a resist composition on the formed underlayer film and drying it to form a resist film (hereinafter sometimes referred to as " Step (3)"), an exposure step of exposing the resist film by selectively irradiating the formed resist film with radiation (hereinafter sometimes referred to as "step (4)"), and exposing the exposed resist A pattern forming step of forming a resist pattern having a specific pattern (hereinafter sometimes referred to as "step (5)"), and etching the underlayer by using a resist pattern as a mask a film and a substrate to be processed, and the substrate to be processed The step of etching the pattern formed in the same specific pattern (hereinafter sometimes referred to as "step (6)"). According to the pattern forming method, since the step (1) and the step (2) are provided, the formed underlayer film has a high modulus of elasticity and can effectively prevent defects such as pattern bending. Therefore, a good pattern can be formed on the substrate to be processed. Step (n is a step of applying a composition for forming a resist underlayer film of the present invention onto a substrate to be processed to form a coating film. For the substrate to be processed, for example, a tantalum wafer, a wafer coated with aluminum, or the like can be used. The method of applying the composition for forming a resist underlayer film to a substrate to be processed is not particularly limited, and may be carried out, for example, by a spin coating method, a casting method, or a light coating method. Next, the step (2) is a step of irradiating the formed coating film with radiation to cure the coating film to form a resist underlayer film on the substrate to be processed. The irradiated radiation may be, for example, visible light, ultraviolet light, far ultraviolet light, -32-201202856 X-ray, electron beam γ ray, molecular beam, ion beam, etc. The film thickness of the underlayer film is usually 0.1 to 5 μm. Further, before step (2) (that is, after step (1)), it may be further The step (1) of forming an intermediate layer (intermediate film) on the underlayer film is formed in the photoresist pattern formation, in order to further complement the work of the underlayer film and/or the resist film A layer that imparts such functions is obtained, and a layer that imparts such functions is obtained. For example, when an antireflection film is formed as an intermediate layer, the antireflection function of the underlayer film can be further complemented. The intermediate layer can be oxidized by an organic compound or inorganic For the organic compound, for example, materials sold under the trade names "DUV-42", "DUV-44", "ARC-28", and "ARC-29" manufactured by Brewer Science, or manufactured by Rohm and Haas Company can be used. The material sold under the trade names of "AR-3" and "AR-19", etc. Further, as the inorganic oxide, for example, a coating type spin-on-glass material manufactured by JSR Corporation or The polysiloxane, the titanium oxide, the aluminum oxide, the tungsten oxide, etc. formed by the CVD method. The method of forming the intermediate layer is not particularly limited, and for example, a coating method, a CVD method, or the like can be used. Among them, a coating method is preferred. When the coating method is used, the intermediate layer may be continuously formed after the formation of the underlayer film. Further, the film thickness of the intermediate layer is not particularly limited, and may be appropriately selected depending on the function required for the intermediate layer, but preferably 1 〇~3 00Onm range, More preferably, it is 20 to 300 nm. Next, the step (3) is a step of applying a resist composition on the formed underlayer film and drying it to form a resist film. Specifically, in order to obtain -33-201202856 After the resist film is applied to the specific film thickness, the resist composition is applied, and the solvent in the coating film is volatilized by prebaking to form a resist film. The anti-uranium composition is, for example, a positive type containing a photoacid generator. Or a negative-type chemically amplified resist composition, a positive-type resist composition composed of an alkali-soluble resin and a quinone-based sensitizer, a negative-type resist composition composed of an alkali-soluble resin and a crosslinking agent, and the like. The solid content concentration of the resist composition used for forming the resist film on the underlayer film is usually about 5 to 50% by mass, and is generally filtered by a filter having a pore diameter of, for example, about 2 μm, to be provided on the resist film. Formation. Further, a commercially available resist composition can be directly used in this step. The coating method of the resist composition is not particularly limited, and it can be carried out, for example, by a spin coating method or the like. Further, the prebaking temperature is appropriately adjusted depending on the type of the resist composition to be used, etc., but is usually about 30 to 200 ° C, preferably 50 to 150 ° C. Next, the step (4) is a step of selectively irradiating the resist film on the formed resist film to expose the resist film. The radiation used for exposure is appropriately selected from visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, gamma ray, molecular beam, ion beam, etc., depending on the kind of photoacid generator used in the resist composition, but Good for far ultraviolet light, preferably KrF excimer laser (248nm), ArF excimer laser (193iim), F2 excimer laser (wavelength I57nm), Kr2 excimer laser (wavelength 147nm), ArKr excimer thunder Shot (wavelength I34nm), extreme ultraviolet (wavelength 13 nm), etc. Next, the step (5) is a step of developing the exposed resist film to form a photoresist pattern having a specific pattern of -34 to 201202856. The developing liquid used in this step is appropriately selected in accordance with the type of the resistant agent to be used. Specifically, for example, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, ammonia, ethylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethyl, Triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide piperidine, choline, 1,8-diazabicyclo[5·4.0]-7-undecene azabicyclo[4.3.0] An alkaline aqueous solution such as -5-pinene. Further, an alcohol such as methanol or ethanol or a surfactant may be added to the alkaline aqueous solution in an appropriate amount. Further, after developing the developing solution, the photoresist pattern is washed and dried. In this step, in order to improve the resolution, the outline of the pattern, and the exposure after the exposure before development, it is possible to perform post-baking. The post-baking is suitably adjusted depending on the type of the resist composition to be used, and is about 50 to 200 ° C, preferably 70 to 150 t. Next, the step (6) is a step of using a resist pattern as a mask, a resist underlayer film, and a substrate to be processed, and the step of patterning the same pattern on the substrate to be processed, and the dry etching may be a gas such as a slurry. Plasma. [Examples] Hereinafter, the present invention will be specifically described based on examples and comparative examples, and is not limited to the examples and comparative examples. Further, it is only referred to as a uranium composition sodium, hydroxy-n-propylamine, hydroxyethanolamine, pyrrole, or 1,5-di-machine solvent to form a specific image, etc., and the temperature system is usually formed by etching with, for example, oxygen. Electricity, but the "parts" and -35- 201202856 "%" are the quality standards unless otherwise specified. [Weight average molecular weight (Mw)]: The weight average molecular weight (Mw) is a GPC column (2 G2000HXL, 1 G3000HXL) manufactured by TOSOH Co., Ltd., at a flow rate: 1.0 ml/min, solvent: tetrahydrofuran, column temperature The analysis conditions of 40 ° C were measured by a gel permeation chromatography (detector: differential refractometer) using monodisperse polystyrene as a standard. (Example 1) 100 parts of isophthalaldehyde, 200 parts of isobutyl cyanoacetate, 1 part of piperidine, and 4-methyl-2-pentanol were fed into a separable flask equipped with a thermometer under a nitrogen atmosphere. 4000 parts were reacted at 60 ° C for 1 hour while stirring to obtain a reaction solution. Subsequently, the reaction solution was allowed to stand for 1 day, and the precipitated solid was filtered, washed with 4-methyl-2-pentanol to give a white solid. This white solid is a compound represented by the following formula (3). [Chem. 2 4]

10 parts of the compound represented by the above formula (3) was dissolved in 100 parts of propylene glycol monomethyl ether to obtain a mixed solution. Subsequently, the mixed solution was filtered through a membrane filter having a pore size of 0.1 μm to obtain a composition for forming a resist underlayer film of -36 to 201202856 (π. Next, the following composition for the underlayer film forming composition (1) was carried out. Evaluation (1) Formation of a positive resist pattern for ArF: First, a composition for forming a resist underlayer film (1) was applied onto a tantalum wafer having a diameter of 8 inches by spin coating to form a coating. Then, using a small-sized high-precision r&d exposure apparatus manufactured by TOPCON, the coating film on the wafer was irradiated with light of 20 mW/cm2 at 300 mJ to harden the coating film to obtain a film thickness of 0.3 μm under the film. Then, a three-layer resist process intermediate layer composition solution (trade name "NFC SOG080", manufactured by JSR Corporation) was spin-coated on the underlayer film, and then heated on a hot plate at 200 ° C for 60 seconds. Then, the film was heated at 300 ° C for 60 seconds to form an intermediate layer film having a film thickness of 0.05 μm on the underlayer film. Then, the resist composition was spin-coated on the intermediate layer film on a hot plate. Pre-baking at 30 ° C for 90 seconds to form a film Further, the resist composition was prepared as follows. First, 8-methyl-8-t-butoxycarbonyl group was fed into a separable flask equipped with a reflux tube under a nitrogen stream. Oxycarbonyltetracyclo[4.4.0.12, 5.17'1()]dodec-3-ene (referred to as monomer (3)) 29 parts, 8-methyl-8-hydroxytetracyclo[4.4.0.12' 5.17'1()] dodecene-3-ene (referred to as monomer (b)) 10 parts, maleic anhydride (referred to as monomer (c)) 18 parts, 2,5-dimethyl-2, 4 parts of 5-hexanediol diacrylate, 1 part of tert-dodecyl mercaptan, 4 parts of azobisisobutyronitrile, and 60 parts of 1,2-diethoxyethane, while stirring Polymerization was carried out at 70 ° C for 6 hours. Subsequently, the reaction solution was poured into a mixed solvent of a large amount of n-hexane / -37 - 201202856 isopropanol (mass ratio = 1 / 1) to obtain a solidified body, which was washed with the above mixed solvent. After several times of solidification, the resin for the resist composition was obtained by vacuum drying (yield 60%). Then, the obtained resist composition was mixed with a resin and a resist to form a solvent for the composition to prepare a resist composition. 'The resin for the obtained resist composition has the same origin from the aforementioned single Each of the repeating units (a), (b) and (c) has a molar ratio of 64:18:18 and a weight average molecular weight (Mw) of 27,000. Further, the resist composition is used. In the solvent, a mixed solvent of propylene glycol monomethyl ether acetate and cyclohexanone (mass ratio: 7:3) was used. Next, an ArF excimer laser device manufactured by NIKON Co., Ltd. (number of lens openings: 0.78, exposure wavelength: 193 nm) was used. Through the mask pattern, the resist film is exposed only between the optimum exposure times. Subsequently, after baking at 130 t for 90 seconds on a hot plate, the exposed resist film was developed at 25 ° C for 1 minute using a 2.38 mass% aqueous solution of tetramethylammonium hydroxide. Subsequently, it was washed with water and dried to obtain a resist film having a line width of 70 nm and a space pattern (1L/1S). (2) Standing wave prevention effect:

A resist film having a positive resist pattern obtained by evaluating the formation of the positive resist pattern for the above (1) ArF was observed by a scanning electron microscope to evaluate the presence or absence of standing wave influence, and was evaluated on the following basis. When the standing wave caused by the reflection of the underlayer film was not observed on the side of the resist pattern, it was judged to be good (indicated as "A" in Table 1), and it was judged to be bad when the standing wave was observed (in Table 1, it was recorded as "C"). "), it is judged to be a little standing wave (indicated in Table 1 as "B -38 - 201202856")

(3) Elasticity: A coating film was formed by spin-coating a composition (1) for forming a resist underlayer film on a wafer having a diameter of 8 inches. Then, the coating film on the wafer was irradiated with light having a strength of 20 mW/cm 2 at 300 m] using an exposure apparatus of a small-sized precision R&D manufactured by TOPCON Co., Ltd., and the coating film was cured to obtain a resist having a film thickness of 33 μιη. Lower film. Subsequently, the elastic modulus (GPa) of the underlayer film was measured by a nanoindenter method to evaluate. Evaluation criteria Those who have an elastic modulus of 10 or more are regarded as qualified "G", and those who do not reach 10 GPAa are regarded as unqualified "N". (4) Etching resistance: The resist underlayer film forming composition (1) was applied onto a tantalum wafer having a diameter of 8 inches by a spin coating method to form a coating film. Then, using a small-sized high-precision R&D exposure apparatus manufactured by TOP CON, the coating film on the wafer was irradiated with light of 20 mW/cm2 at 300 mJ to cure the coating film to obtain a resist having a thickness of 0.3 μm. Lower film. Subsequently, etching treatment (tact conditions: pressure: 0.03 Torr > high frequency power: 3 000 W, Ar/CF4 = 40/1 OOsccm, substrate temperature: 2 (TC) of the underlayer film, and the underlying film after the etching treatment was measured. Film thickness. Then, the etching rate (nm/min) is calculated from the relationship between the reduction in film thickness and the processing time. The smaller the calculated value, the higher the etching resistance of the anti-uranium underlayer film is, and it is better for calculation. Then, it was evaluated on the following evaluation criteria. When it was less than 9 nm/min, it was evaluated as "A"' 0.9 nm/min -39 - 201202856 or more and 1.2 nm/min or less was evaluated as "B", and when it exceeded 1.2 nm/min. The evaluation is "C". In the "Table 1", the evaluation results are listed in the "etching rate" column. The standing wave preventing effect of the composition for forming a resist underlayer film (1) of the present embodiment is evaluated as "A". The evaluation result of the elastic modulus was "G". The evaluation result of the etching resistance was "A". (Example 2) 100 parts of cinnamic acid and sodium hydrogencarbonate were fed into a separable flask equipped with a thermometer under a nitrogen atmosphere. 200 parts, 1 part of tetra-n-butylammonium chloride, and N,N-dimethylformaldehyde 40 00 parts, and the reaction solution was obtained by reacting at ii 〇 °c for 40 hours while stirring. Then, methanol was added to the obtained reaction solution to obtain a precipitate, and the resulting precipitate was filtered to obtain a white solid. 4) The compound represented. [Chem. 2 5]

The resist film forming composition (2) of Example 2 was obtained except that the compound represented by the formula (4) was used instead of the compound represented by the above formula. The above-mentioned various evaluations were carried out on the obtained composition (2) for forming a resist underlayer film as in Example 1. The evaluation results are shown in Table 1. -40-201202856 (Example 3) A resist underlayer film formation of Example 3 was obtained as in Example 1 except that the compound represented by the following formula (5) was used instead of the compound represented by the above formula (3). Composition (3) ° As described in Example 1, the obtained composition for forming an underlayer film (3) was evaluated. The evaluation results are shown in Table 1. [Chem. 2 6]

(Example 4) The composition for forming an anti-uranium underlayer film of Example 4 was obtained as in Example 1 except that the compound represented by the following formula (6) was used instead of the compound represented by the above formula (3). In the case of 51 cases of the stomach, the obtained composition for forming a resist underlayer film (4 > 51 & $ evaluations. The evaluation results are shown in Table 1. -41 - 201202856 [Chem. 2 7] Ο

(6) (Example 5) The composition for forming a resist underlayer film of Example 5 was obtained as in Example 1 except that the compound represented by the following formula (7) was used instead of the compound represented by the above formula (3). (5). The above-mentioned various evaluations were carried out on the obtained composition for forming an underlayer film for corrosion prevention as in Example 1. The evaluation results are shown in Table 1. [化2 8]

(7) (Comparative Example 1) 100 parts of 2,7-dihydroxy naphthalene, 30 parts of formalin, 1 part of p-toluenesulfonic acid, and propylene glycol monomethyl ether were fed into a separable flask equipped with a thermometer under a nitrogen atmosphere. 150 parts were polymerized at 80 ° C for 6 hours while stirring to obtain a reaction solution. Subsequently, the reaction solution was diluted with 100 parts of n-butyl acetate, and the organic layer was washed with a large amount of a mixed solvent of water/methanol (mass ratio: 1/2). -42- 201202856 Subsequently, the above mixed solvent was saturated to obtain a polymer. The weight average molecular weight (Mw) of the obtained polymer was 1,800. The resist underlayer film forming composition (6) of Comparative Example 1 was obtained as in Example 1 except that 10 parts of the above polymer was used instead of the compound represented by the above formula (3). The above-mentioned various evaluations were carried out as in Example 1 using the obtained composition (6) for forming a photoresist underlayer film. The evaluation results are shown in Table 1. In the comparative example, the underlayer film (film thickness: 0.3 μm) is formed by forming a coating film on a substrate (a wafer having a diameter of 8 inches) by using the composition (6) for forming a resist underlayer film. The substrate of the coating film was placed on a hot plate and heated at 300 ° C for 120 seconds to be formed on the substrate. (Comparative Example 2) In place of the use of bis(4-glycidoxyphenyl)-methyl compound (the compound represented by the following formula (8)), 1 part by weight, and 1 part of triphenylsulfonium trifluoromethane compound, The composition for forming a resist underlayer film (7) of Comparative Example 2 was obtained as in the above Example 1 except for the compound represented by the above formula (3). Each of the above-mentioned items of the obtained composition for forming a resist underlayer film (7) was evaluated as in Example 1. The evaluation results are shown in Table 1. [化2 9]

-43- 201202856 [Table l]

Type of composition for forming a resist underlayer film. Standing wave preventing effect Elasticity ratio (GPa) Etching rate Example 1 (1) AGA Example 2 (2) AGA Example 3 (3) AGA Example 4 (4) AGA implementation Example 5 (5) AGA Comparative Example 1 (6) ANB Comparative Example 2 (7) ANC It is clear from Table 1 that the compositions for forming a resist underlayer film of Examples 1 to 5 can be formed to have the compositions of Comparative Examples 1 and 2. The anti-corrosion underlayer film having the same degree of standing wave preventing effect as the composition for forming an underlayer film and having high modulus of elasticity and uranium resistance. [Industrial Applicability] The composition for forming a resist underlayer film of the present invention can be suitably used as a material for a resist underlayer film formed by a multilayer resist process in a method for producing an integrated circuit device. -44-

Claims (1)

201202856 VII. Patent application scope: 1. A composition for forming an anti-uranium underlayer film containing (A) a photopolymerizable compound represented by the following formula (1) and represented by the following formula (2) At least one photopolymerizable compound selected from the group consisting of photopolymerizable compounds, and (B) solvent, R1 - | - CR11 = CR12R13] (1) (in the formula (1), R11~ R13 independently of each other represents a monovalent 'hydrogen atom' derived from an aromatic compound, a carbon number of alkyl groups, a cycloalkyl group having a carbon number of 3 to 20, a nitro group, a cyano group, -COR2, -COOR2 or -CON(R2)2 (but in -COR2, -COOR2, and -CON(R2)2, R2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms or The monovalent organic group derived from the aromatic compound may have a substituent), but any one of R11 to R13 is a monovalent group of a nitro group derived from an aromatic compound, a nitro group, a -C 2 , a -COOR 2 or - CON(R2)2, R3 represents an nl-valent organic group derived from an aromatic compound which may have a substituent, and nl represents an integer of 2 to 4), [2] (2) R6-[x-d is called n2 (through In (2), R4 independently of each other represents a monovalent organic group derived from an aromatic compound, a hydrogen atom, an alkyl group having a carbon number of 10, a cycloalkyl group having a carbon number of 3 to 20, a nitro group, a cyano group, -COR7, -COOR7 or -CON(R7)2 (but in -COR7, -COOR7 or -CON(R7)2, R7 independently of each other represents a hydrogen atom -45-201202856, an alkyl group having a carbon number of 1 to 10, carbon a cycloalkyl group of 3 to 20 or a monovalent organic group derived from an aromatic compound may have a substituent), and R5 represents a monovalent organic group derived from an aromatic compound which may have a substituent, and R0 represents A π2 valence organic group, X represents -C00-* or -CONH-* ("*" represents a bond to the R6 bond), and n2 represents an integer from 2 to 10). 2. The composition for forming a resist underlayer film according to the first aspect of the invention, wherein the photopolymerizable compound represented by the formula (1) is a compound represented by the following formula (1-1), The photopolymerizable compound represented by the formula (2) is a compound represented by the following formula (2-1), and is a compound represented by the following formula (2-1). OR2 (1-1) J n1 (In the formula (1-1), R1 represents a hydrogen atom or a cyano group independently of each other, and R2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, and a carbon number of 3~ The cycloalkyl group of 20 or the monovalent organic group derived from the aromatic compound may further have a substituent, R3 represents a nl valent organic group derived from an aromatic compound which may have a substituent, and nl represents a 2-4. Integer), [Chemical 4] R6 N2 (2-1) -46-201202856 (In the formula (2-1), R41 independently represents a hydrogen atom or represents an n2 valent hydrocarbon group, n2 represents an integer of 2 to 10, and RP represents an integer of the substitution 〇~5) . 3. The film of the underlayer film of the first or second aspect of the invention, wherein the photopolymerizable compound represented by the formula (1) is a compound represented by the formula (1-11), and cyanide The base, the R6 group, and the η p composition are as follows (In the formula (1-11), R1 independently of each other represents a hydrogen atom or independently represents a hydrogen atom, an alkyl group having a carbon number of 1 alkyl, a carbon number alkyl group or a monovalent organic group derived from an aromatic compound. , also on behalf of the base, nl represents an integer of 2 to 4). 4. The composition for resist formation according to any one of claims 1 to 3, wherein the photopolymer represented by the above formula (1) is a compound represented by the following formula (1-111). , [Chemical 6] Cyano group, R2 3~20 ring can have a film composition (In the formula (1-111), R1 independently represents a hydrogen atom or a cyano group, and -47-201202856 R2 independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a carbocyclic alkyl group or an aromatic group. a monovalent organic group derived from a compound, a substituent). A pattern forming method comprising the steps of: applying a resist composition according to any one of claims 1 to 4 to a substrate to be processed to form a coating film; By irradiating the formed coating film with radiation, the underlayer of the underlayer film is formed on the substrate to be processed, and the resist composition is applied onto the resist underlayer film to form an anti-corrosion agent. a resist film forming step of the etching film, an exposure step of selectively irradiating the resist film to expose the front film, and exposing the exposed resist film to form a pattern having a special resist pattern And a forming step of etching the substrate to be processed by using the resist pattern as a mask to form an etching step on the substrate to be processed in the same pattern as the pattern. The number of 3 to 20 may also have an underlayer film-forming film forming step-coating film-hardening film forming step drying to form a resist-patterned underlying film and the above-mentioned specific representative figure of: -48-201202856: (1) The representative picture is: None (2) The symbol of the symbol of this representative figure is simple: No 201202856 If there is a chemical formula in the case of this case, please disclose the chemical formula that best shows the characteristics of the invention: none