201201342 六、發明說明： I：發明戶斤屬之技術領域3 技術領域 本發明係關於具備貫穿電極的半導體裝置，尤其係關 於防止在填充供形成貫穿電極的貫穿孔内部的保護層發生 裂痕等之不良情形，而使保護層的耐久性提升的半導體裝 置及其製造方法。 c先前技術3 背景技術 以往，在具備受光元件或影像感測器元件等電路元件 的半導體裝置中，係使用打線接合來作為電路元件與配線 層之間的連接構造。相對於此，近來，取代打線接合，而 提出一種使用貫穿電極(Through-Silicon Via，TSV)的半導 體裝置，尤其是使用貫穿電極的晶圓級封裝體。 貫穿電極係藉由以具導電性的金屬來被覆垂直形成在 半導體基板的貫穿孔所形成。與實現藉由打線接合所為之 連接的習知方法相比較，形成貫穿電極的技術係可大幅縮 短配線距離，因此有助於半導體裝置的高速化、省電化、 小型化。 具有該等優異特徵的貫穿電極在可實現現今急速發展 的構裝高密度化或資訊處理速度高速化方面乃非常優異。 以使用習知之貫穿電極的半導體裝置而言，已知有例 如曰本特開平5-152435號公報所記載的半導體裝置。第8圖 係顯示具備習知之貫穿電極之半導體裝置之一例。該半導 201201342 體裝置101係具有：在第1面l〇2a(—面，2個面中的其中一 面）形成有絕緣部103的半導體基板1〇2;及形成在半導體基 板102之第l®iG2a上的f路元件1()4來作為主要構成要素。 在半導體基板102係以電極烊墊1〇5露出於半導體基板 之第2面1G2b側的方式形減貫穿孔106。在半導體基板102 的兩面及貫穿孔1〇6的内部形成有絕緣層1〇7，在絕緣層1〇7 上且貫穿孔1G6的側面及半導體基板的第2φ1係形成有 再配線層108及貫穿電極109。貫穿電極1〇9係與電極焊墊 105作電性連接。 電路元件104係透過配線部119而與電極焊墊105作電 性連接。此外，電極焊墊1〇5係透過貫穿電極1〇9而與再配 線層108作電性連接，藉此可進行電路元件1〇4與配置在半 導體基板102的第2面102b的構件的電性連接。 再配線層108及貫穿電極1〇9主要由Cu所構成。此外， 再配線層108及貫穿電極109係由保護層n〇(overcoat layer) 所被覆而受到保護。 在形成該保護層110時，大部分使用廉價的負型感光性 樹脂。該負型感光性樹脂係被埋入在貫穿孔106的内部，同 時被覆包含再配線層108的半導體基板1〇2的第2面102b。在 該構造中所使用的負型感光性樹脂係乾膜狀或清漆狀樹 脂。藉由薄膜積層或旋塗等手法，使負型感光性樹脂被填 充在貫穿孔106的内部。 在形成保護層110之後’藉由光微影，形成載置焊料凸 塊15的cu焊墊的開口部或用以切割成晶片尺寸的劃線，而 201201342 完成半導體基板。 但是，伴隨著近年來的配線圖案等的微細化，隨著貫 穿孔106的縱橫比的增加，在習知的構造中，在塗膜感光性 樹脂時會有產生孔洞151的不良情形。以如上所示的原因而 言，考慮有：在縱橫比較大的貫穿孔不易渗入感光性樹脂， 而不容易完全以樹脂填充貫穿孔的内部。尤其，在接近被 覆貫穿孔内部的貫穿電極109的底面109a與側面109b之間 的交叉部的位置容易發生孔洞151。 此外，在將感光性樹脂進行曝光時，曝光光線不易到 達貫穿孔106的内部。因此，在貫穿孔的内部，感光性樹脂 的光化學反應未充分進行，因殘留未反應的感光成分而形 成機械強度差的保護層，而會有發生如裂痕般的空隙152的 問題。 由於如上所示之孔洞151或空隙152存在於保護層 110，容易使得裂痕以孔洞或空隙為起點而擴大，甚至容易 發生貫穿電極109的斷線，結果會有半導體裝置101的可靠 性降低的問題。 I；發明内容3 發明要旨 本發明係考量如上所示之情形而研創者，其目的在提 供一種防止在填充構成貫穿電極的貫穿孔内部的保護層發 生裂痕等的不良情形的半導體裝置。 本發明之第1態樣之半導體裝置係具備有：半導體基 板，其具備有：第1面、與前述第1面相反的第2面、及設在 201201342 前述第1面的電極焊整；貫穿孔’其從前 扪面貫穿前述半導體基板，且露面朝向前述 極’其被覆露出前述電極烊墊的露出部穿電 面，具有底面與側面，與前述電極科作電接孔= 護層’其被填充在前述貫穿孔内，被覆前述貫穿電極，以' 複數層卿成。找㈣料置巾，前㈣制之前述複 數層之=為接近前述第的層係至少被覆位於前述貫 穿電極的“底面與前述側面之_位置的交又部，且由 正型感光性樹脂所構^亦即，最為接近前述第^面的前述 層係使用正型感光性樹脂所形成。 本發明之第2態樣之半導體裝置之製造方法係具有以 下步驟(Α)至(G)〇 八 (A) 準備具有：第1面、及與前述第1面相反的第2面的 半導體基板’在前述第1面形成電極焊墊。 (B) 形成從前述第2面朝向前述第i面貫穿前述半導體 基板的貫穿孔，且露出前述電極焊墊。 (C) 形成被覆露出前述電極焊墊的露出部及前述貫穿 孔的側面，且具有底面與側面的貫穿電極。 (D) 使用正型感光性樹脂來被覆前述貫穿電極。 (E) 對前述半導體基板的前述第2面照射光。 (F) 以至少在位於前述貫穿電極的前述底面與前述側面 之間的位置的交叉部殘留前述正型感光性樹脂的方式去除 前述正型感光性樹脂。 (G)接著，在前述貫穿孔内填充樹脂。 201201342 在本發明之第2態樣之半導體裝置之製造方法中，反覆 複數次則述步驟D、前述步驟E、及前述步驟ρ·。 藉由本發明之第1態樣的半導體裝置，藉由複數層保護 層形成有被填充在貫穿孔内且被覆貫穿電極的保護層。由 複數層所構成的保護層係至少被覆位於前述貫穿電極的前 述底面與前述側面之間的位置的交叉部，而且使用正型感 光性樹脂所形成。藉此，可提供在貫穿孔的内部確實填充 有保護層的半導體裝置。此外，由於在曝光光線不易到達 的貫穿孔的底面的角落部填充有正型感光性樹脂，因此可 排除因位於貫穿孔内部的感光性樹脂未被曝光而起的問 題。因此，可提供可抑制在成型後在樹脂發生裂痕(樹脂裂 痕）等不良情形發生的半導體裝置。 此外，在本發明之第2態樣之半導體裝置之製造方法 中，首先，以正型感光性樹脂被覆光不易到達的貫穿電極 的底部，在被覆有正型感光性樹脂的面照射光，以在貫穿 電極的底面殘留正型感光性樹脂的方式來去除樹脂。藉 此可在貝牙孔的内部確實填充保護層，並且可在曝光光 線不易到達的貫穿電極的底面的角落部填充正型感光性樹 月曰。因此’可排除因貫穿孔内部的感光性樹脂未被曝光而 起士的問題。因此’可提供可抑制在成型後在樹脂發生裂痕 (樹脂裂痕)等不良情形發生的半導體裝置之製造方法。 再者，在本發明之第2態樣之半導體裝置之製造方法 中反覆複數次上述正型感光性樹脂的填充、光照射、樹 月曰去除的步驟。藉此，在貫穿孔的内部填充少量樹脂，之 201201342 後，以重疊在之前所填充的樹脂上的方式在貫穿孔的内部 填充樹脂。亦即，在貫穿孔的内部逐次少許填充樹脂。因 此，更加確實地在貫穿孔的内部填充樹脂，而不易發生填 充不良。 圖式簡單說明 第1圖係本發明之半導體裝置之第1實施形態的剖面圖。 第2A圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2B圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2C圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2D圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2E圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第3圖係本發明之半導體裝置之第2實施形態的剖面圖。 第4圖係本發明之半導體裝置之第3實施形態的剖面圖。 第5圖係本發明之半導體裝置之第4實施形態的剖面圖。 第6圖係本發明之半導體裝置之第5實施形態的剖面圖。 第7圖係本發明之半導體裝置之第6實施形態的剖面圖。 第8圖係習知之半導體裝置的剖面圖。 C實施方式3 較佳實施形態 201201342 以下參照圖示，詳加說明本發明之實施形遙之半導體 裝置。在以下說明所使用的各圖示中’適當變更各構件的 尺寸，俾以將各構件形成為可辨識之大小。 (第1實施形態） 第1圖係顯示本發明之實施形態的剖面圖。在第1圖 中，元件符號1係表示半導體裝置，元件符號2係表示半導 體基板，元件符號3係表示絕緣部’元件符號4係表示電路 元件，元件符號5係表示電極焊墊，元件符號6係表示貫穿 孔，元件符號7係表示絕緣層，元件符號8係表示再配線層’ 元件符號9係表示貫穿電極，元件符號20係表示支持基板’ 元件符號21係表示接合樹脂。 如第1圖所示，第1實施形態之半導體裝置丨係具有透過 接合樹脂21而藉由支持基板20支持設有再配線層8、貫穿電 極9、電路元件4等的半導體基板2的構造。 半導體基板2例如為矽或GaAs等半導體基板。半導體基 板2的厚度為例如數百μηι左右。半導體基板2的第1面2a係 作為絕緣部3而發揮功能。 半導體基板2可為矽晶圓等半導體晶圓，亦可為具有藉 由切斷(d i c i n g)半導體晶圓所被分割的預定尺寸（晶片尺寸) 的半導體晶片。若半導體基板2為半導體晶片時，首先，在 半導體晶圓之上形成各種電路元件等之後，藉由切斷半導 體晶圓，可得具有預定尺寸（晶片尺寸）的複數個半導體晶 片。電路元件4例如為記憶體、1C、攝像元件、MEMS元件 等半導體功能元件等。 201201342 以支持基板20的材料而言，較佳為選擇將半導體基板2 與支持基板20相接合時的溫度下的支持基板2〇的熱膨脹率 接近於半導體基板2的熱膨脹率的材料(構件p具體而言， 以玻璃基板較為合適，但是若對電路元件2未要求光學特性 時，則支持基板20的材料並不需要為透明的材料。此外， 支持基板20並不-定為必要，若在半導縣板2充分獲得所 要求的強度時’亦可省略支持基板2〇。 以接合樹脂21的材料而言，係使用具有接著性及電性 絕緣性的材料，以使關如聚醯亞胺樹脂、環氧樹脂、笨 并環丁烯(BCB)樹脂等為宜。 在半導體基板2的第W2a上設有_料5。以電極焊 墊5的材質而言，係適於使用A丨或&、紹_雜1列合金、 鋁-矽-銅(Al-Si-Cu)合金等導電性佳的材料。 電極焊墊5係透過配線部19而與被設在半導體基板2之 第1面2a上的電路元件4作電性連接。配線卵係被配置在 半導體基板2的第丨㈣上’構成將電極焊塾$與電路元件4 作電性連接的電路。以配線部19的材f而言，若使用與電 極焊塾5相同的材質即可’適於使用擎別 合金、鋁♦銅_-Cu)合金等導電性佳的材料。 在半導體基板2中’係在設有電極料5的部分，形成 有從第2面2b朝向第lfi2a貫穿的貫穿孔6。因此，若由^ 面此側觀看，會透過貫穿孔6而露出電極焊墊㈣―部分。 =穿孔㈣口㈣例純十_左右。此外，設在半導體基 2上的貫穿孔6的數量並未特別限定。 10 201201342 此外，在半導體基板2的第2面2b及貫穿孔5的側面設有 絕緣層7。藉由設置絕緣層7，半導體基板2係基板的第2面 2b及貫穿孔6的側面具有絕緣性。絕緣層7係由例如、 SiN或樹脂膜所構成。 此外，在貫穿孔6的内部係形成有覆蓋貫穿孔6的側面 及露出電極焊墊5的露出部的貫穿電極在半導體基板2的 第2面2b係形成有再配線層8。再配線層㈣―端係與貫穿電 極9作電性連接。貫穿電極9係與電極焊些5作電性連接。貫 穿電極9及再配線層8的材料係以導電性佳的材料為佳。^ 外’以貫穿電極9的材料而言’係以使用電極蟬塾5與貫穿 電極9的密接性佳、並且 不易在電極㈣5的内部擴散的材 係=::: =，材料…201201342 VI. Description of the Invention: I: Technical Field of Invention 3 Technical Field The present invention relates to a semiconductor device including a through electrode, and more particularly to preventing cracking of a protective layer inside a through hole filled with a through electrode. A semiconductor device in which the durability of the protective layer is improved in a case of a problem, and a method of manufacturing the same. C. Prior Art 3 In the conventional semiconductor device including a circuit element such as a light receiving element or an image sensor element, wire bonding is used as a connection structure between the circuit element and the wiring layer. On the other hand, recently, instead of wire bonding, a semiconductor device using a through-electrode (TSV), in particular, a wafer-level package using a through electrode has been proposed. The through electrode is formed by coating a through hole formed vertically in the semiconductor substrate with a conductive metal. Compared with the conventional method for connecting the wires by wire bonding, the technique of forming the through electrodes can greatly shorten the wiring distance, thereby contributing to speed increase, power saving, and miniaturization of the semiconductor device. The through electrode having such excellent characteristics is excellent in achieving high density of the structure which is rapidly developing today, and speeding up the information processing speed. For example, a semiconductor device disclosed in Japanese Laid-Open Patent Publication No. Hei 5-154235 is known. Fig. 8 shows an example of a semiconductor device having a conventional through electrode. The semiconductor device 101 includes a semiconductor substrate 1 2 in which an insulating portion 103 is formed on one surface of the first surface 10a (a surface, one of the two surfaces); and a first substrate formed on the semiconductor substrate 102 The f-channel component 1() 4 on the ®iG2a is used as a main component. The through hole 106 is formed in the semiconductor substrate 102 so that the electrode pad 1〇5 is exposed on the second surface 1G2b side of the semiconductor substrate. An insulating layer 1〇7 is formed on both surfaces of the semiconductor substrate 102 and the inside of the through hole 1〇6, and a rewiring layer 108 and a through surface are formed on the insulating layer 1〇7 and the side surface of the through hole 1G6 and the second φ1 of the semiconductor substrate. Electrode 109. The through electrodes 1〇9 are electrically connected to the electrode pads 105. The circuit component 104 is electrically connected to the electrode pad 105 through the wiring portion 119. Further, the electrode pad 1〇5 is electrically connected to the rewiring layer 108 through the through electrode 1〇9, whereby the circuit element 1〇4 and the member disposed on the second surface 102b of the semiconductor substrate 102 can be electrically connected. Sexual connection. The rewiring layer 108 and the through electrodes 1〇9 are mainly composed of Cu. Further, the rewiring layer 108 and the through electrode 109 are protected by being covered by a protective layer overcoat layer. When the protective layer 110 is formed, most of the inexpensive negative photosensitive resin is used. The negative photosensitive resin is embedded in the inside of the through hole 106, and simultaneously covers the second surface 102b of the semiconductor substrate 1A2 including the rewiring layer 108. The negative photosensitive resin used in this structure is a dry film or varnish-like resin. The negative photosensitive resin is filled in the inside of the through hole 106 by a method such as film lamination or spin coating. After the formation of the protective layer 110, an opening portion of the cu pad on which the solder bump 15 is placed or a scribe line for cutting into a wafer size is formed by photolithography, and 201201342 completes the semiconductor substrate. However, with the recent miniaturization of wiring patterns and the like, as the aspect ratio of the through-holes 106 increases, in the conventional structure, the holes 151 may be formed when the photosensitive resin is applied. For the reason as described above, it is considered that it is difficult to infiltrate the photosensitive resin in the through hole which is relatively large in the aspect ratio, and it is not easy to completely fill the inside of the through hole with the resin. In particular, the hole 151 is likely to occur at a position close to the intersection between the bottom surface 109a and the side surface 109b of the through electrode 109 inside the covered through hole. Further, when the photosensitive resin is exposed, the exposure light does not easily reach the inside of the through hole 106. Therefore, in the inside of the through-hole, the photochemical reaction of the photosensitive resin is not sufficiently performed, and a protective layer having poor mechanical strength is formed by leaving an unreacted photosensitive component, and there is a problem that a void 152 such as a crack occurs. Since the hole 151 or the void 152 as described above is present in the protective layer 110, it is easy to cause the crack to expand from the hole or the void as a starting point, and even the disconnection of the through electrode 109 is likely to occur, and as a result, the reliability of the semiconductor device 101 is lowered. . I. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor device which prevents a problem such as cracking of a protective layer filling a through-hole constituting a through-electrode. A semiconductor device according to a first aspect of the present invention includes: a semiconductor substrate including: a first surface; a second surface opposite to the first surface; and an electrode welding provided on the first surface of 201201342; a hole 'through the semiconductor substrate from the front surface, and the exposed surface facing the pole' is exposed to expose the exposed surface of the electrode pad, having a bottom surface and a side surface, and the electrode is electrically connected to the electrode layer The through-hole is filled in the through-hole, and the plurality of layers are formed. Looking for the (four) material, the plurality of layers of the first (four) system are at least close to the intersection of the "bottom surface and the side surface of the through-electrode", and the positive-type photosensitive resin is In other words, the layer closest to the first surface is formed using a positive photosensitive resin. The method of manufacturing the semiconductor device according to the second aspect of the present invention has the following steps (Α) to (G) 〇8 (A) A semiconductor substrate having a first surface and a second surface opposite to the first surface is formed with an electrode pad formed on the first surface. (B) forming a second semiconductor surface penetrating from the second surface toward the ith surface The electrode pad is exposed through the through hole of the semiconductor substrate. (C) A through electrode having a bottom surface and a side surface covered with an exposed portion of the electrode pad and a side surface of the through hole is formed. (E) irradiating the second surface of the semiconductor substrate with light (F) leaving the positive type at least at an intersection of a position between the bottom surface and the side surface of the through electrode. Sensitivity The positive-type photosensitive resin is removed by a grease method. (G) Next, the through-hole is filled with a resin. 201201342 In the method of manufacturing a semiconductor device according to a second aspect of the present invention, the step D and the step are described above. Step E and the step ρ·. In the semiconductor device according to the first aspect of the present invention, the protective layer which is filled in the through hole and covers the through electrode is formed by the plurality of protective layers. The protection by the plurality of layers The layer is formed at least at an intersection portion between the bottom surface and the side surface of the through electrode, and is formed of a positive photosensitive resin. Thereby, a semiconductor device which is surely filled with a protective layer inside the through hole can be provided. Further, since the corner portion of the bottom surface of the through hole which is hard to reach by the exposure light is filled with the positive photosensitive resin, the problem that the photosensitive resin located inside the through hole is not exposed can be eliminated. A semiconductor device that suppresses occurrence of defects such as cracks (resin cracks) in the resin after molding. Further, in the second aspect of the present invention In the method of manufacturing a semiconductor device of the first aspect, the positive photosensitive resin is used to cover the bottom of the penetrating electrode which is hard to reach, and the surface coated with the positive photosensitive resin is irradiated with light to leave a positive type on the bottom surface of the penetrating electrode. The photosensitive resin is used to remove the resin, whereby the protective layer can be surely filled inside the bead hole, and the positive photosensitive tree can be filled in the corner portion of the bottom surface of the through electrode which is difficult to reach by the exposure light. The problem that the photosensitive resin in the inside of the through-hole is not exposed to light is eliminated. Therefore, a method of manufacturing a semiconductor device capable of suppressing occurrence of cracks (resin cracks) in the resin after molding can be provided. In the method of manufacturing a semiconductor device according to a second aspect of the present invention, the steps of filling, light-irradiating, and dendritic removal of the positive-type photosensitive resin are repeated a plurality of times. Thereby, a small amount of resin is filled in the inside of the through hole, and after 201201342, the inside of the through hole is filled with the resin so as to be superposed on the previously filled resin. That is, the resin is gradually filled a little in the inside of the through hole. Therefore, the resin is filled more reliably inside the through hole, and the filling failure is less likely to occur. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a semiconductor device of the present invention. Fig. 2A is an explanatory view showing the steps of a method of manufacturing a semiconductor device of the present invention. Fig. 2B is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2C is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2D is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2E is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 3 is a cross-sectional view showing a second embodiment of the semiconductor device of the present invention. Fig. 4 is a cross-sectional view showing a third embodiment of the semiconductor device of the present invention. Fig. 5 is a cross-sectional view showing a fourth embodiment of the semiconductor device of the present invention. Figure 6 is a cross-sectional view showing a fifth embodiment of the semiconductor device of the present invention. Figure 7 is a cross-sectional view showing a sixth embodiment of the semiconductor device of the present invention. Figure 8 is a cross-sectional view of a conventional semiconductor device. C. Embodiment 3 Preferred Embodiments 201201342 Hereinafter, a semiconductor device according to the present invention will be described in detail with reference to the drawings. In the respective drawings used in the following description, the size of each member is appropriately changed so that each member is formed into a recognizable size. (First embodiment) Fig. 1 is a cross-sectional view showing an embodiment of the present invention. In the first embodiment, the reference numeral 1 denotes a semiconductor device, the reference numeral 2 denotes a semiconductor substrate, and the reference numeral 3 denotes an insulating portion. The component symbol 4 denotes a circuit component, and the component symbol 5 denotes an electrode pad, and the component symbol 6 The through-holes are shown, the component symbol 7 is an insulating layer, the component symbol 8 is a rewiring layer, the component symbol 9 is a through-electrode, and the component symbol 20 is a support substrate. The component symbol 21 is a bonding resin. As shown in Fig. 1, the semiconductor device of the first embodiment has a structure in which the semiconductor substrate 2 including the rewiring layer 8, the penetrating electrode 9, the circuit element 4, and the like is supported by the support substrate 20 through the bonding resin 21. The semiconductor substrate 2 is, for example, a semiconductor substrate such as tantalum or GaAs. The thickness of the semiconductor substrate 2 is, for example, about several hundred μηι. The first surface 2a of the semiconductor substrate 2 functions as the insulating portion 3. The semiconductor substrate 2 may be a semiconductor wafer such as a germanium wafer, or may be a semiconductor wafer having a predetermined size (wafer size) divided by the semiconductor wafer. When the semiconductor substrate 2 is a semiconductor wafer, first, after forming various circuit elements or the like on the semiconductor wafer, a plurality of semiconductor wafers having a predetermined size (wafer size) can be obtained by cutting the semiconductor wafer. The circuit element 4 is, for example, a semiconductor functional element such as a memory, a 1C, an imaging element, or a MEMS element. 201201342 In order to support the material of the substrate 20, it is preferable to select a material having a thermal expansion coefficient close to the thermal expansion coefficient of the semiconductor substrate 2 at a temperature at which the semiconductor substrate 2 and the support substrate 20 are joined (component p specific) In particular, a glass substrate is suitable. However, when optical characteristics are not required for the circuit element 2, the material of the support substrate 20 does not need to be a transparent material. Further, the support substrate 20 is not necessarily required. When the guide plate 2 sufficiently obtains the required strength, the support substrate 2 may be omitted. In the case of the material of the joint resin 21, a material having an adhesive property and electrical insulation is used to make a resin such as a polyimide resin. Epoxy resin, stupid cyclobutene (BCB) resin, etc. are preferably provided on the W2a of the semiconductor substrate 2. In the material of the electrode pad 5, it is suitable to use A丨 or & A material having good conductivity such as an alloy of 1 row or a matrix of aluminum-bismuth-copper (Al-Si-Cu) alloy. The electrode pad 5 is transmitted through the wiring portion 19 and is provided on the first surface 2a of the semiconductor substrate 2. The upper circuit component 4 is electrically connected. It is placed on the fourth (fourth) of the semiconductor substrate 2 to constitute a circuit for electrically connecting the electrode pad $ to the circuit element 4. The material f of the wiring portion 19 can be made of the same material as the electrode pad 5. 'Good for conductive materials such as GL alloy, aluminum ♦ copper _-Cu alloy. In the semiconductor substrate 2, a through hole 6 penetrating from the second surface 2b toward the first fifa is formed in a portion where the electrode material 5 is provided. Therefore, if viewed from the side of the surface, the electrode pad (four) portion is exposed through the through hole 6. = perforated (four) mouth (four) case pure ten _ or so. Further, the number of the through holes 6 provided in the semiconductor base 2 is not particularly limited. 10 201201342 Further, an insulating layer 7 is provided on the second surface 2b of the semiconductor substrate 2 and the side surface of the through hole 5. By providing the insulating layer 7, the second surface 2b of the semiconductor substrate 2 substrate and the side surface of the through hole 6 have insulating properties. The insulating layer 7 is made of, for example, a SiN or a resin film. Further, a through-electrode covering the side surface of the through hole 6 and the exposed portion exposing the electrode pad 5 is formed in the inside of the through hole 6, and the rewiring layer 8 is formed on the second surface 2b of the semiconductor substrate 2. The rewiring layer (4) - the end system is electrically connected to the through electrode 9. The through electrode 9 is electrically connected to the electrode 5 . The material penetrating the electrode 9 and the rewiring layer 8 is preferably a material having good conductivity. The outer layer is made of a material penetrating the electrode 9 so that the adhesion between the electrode 蝉塾5 and the penetrating electrode 9 is good, and it is difficult to diffuse inside the electrode (4) 5 =::: =, material...
Ag、Pb、Sn、Au、Co、cr、Ti、m,Ag, Pb, Sn, Au, Co, cr, Ti, m,
等導體(各種金屬或合金等 lW 為適合。 ♦)次者。㈣加以組合後的材料較 全雜。例如，用：：：:=的 ，的第_與第262b之間的方式二跨及半導 的構成。 直有貝穿電極9 伴it者在半導體基板则2面喊貫穿孔6的㈣传由 保4層10予以被覆。如前 P係由 藉由絕緣層7、再配線以Μ +導體基板2及貫穿孔6係 飼己線層8、及貫穿電極9予以 f層1〇係以被覆絕緣層7、再配線層8、及貫穿電極二此保 所形成。 貝牙電極9的方式 201201342 本實施形態之半導體裝置1係藉由由正型感光性樹月旨 所構成的第一層11與由負型感光性樹脂所構成的第二層12 來構成保護層10。第一層11係至少配置在貫穿孔6的内部， 為在保蠖層10之中最為接近半導體基板2的第1面2a的層。 正型感光性樹脂係指藉由藥液來去除藉由將樹脂進行 曝光所生成的曝光部的感光性樹脂。負型感光性樹脂係指藉 由藥夜來去除藉由除了曝光部以外的樹脂的感光性樹脂。 如第1圖所示’第一層Π係配置在貫穿孔6的内部中接 近半導體基板2的第1面2a，亦即接近貫穿孔6的底部的位置 (底部側），被覆貫穿電極9的底面9a。第一層11的厚度並未 特別限定，至少貫穿電極9的底面9a與側面9b呈交叉的交叉 部係被由正型感光性樹脂所成的第一層丨丨予以被覆。 以第一層11的材料而言，例如可適用聚醯亞胺樹脂、 矽氧樹脂、環氧樹脂等各種樹脂材料。 第二層12係以覆蓋第一層11的方式，被覆貫穿孔6的内 部及半導體基板2的第2面2b。第二層12係以至少露出再配 線層8之連接部的方式予以圖案化，在該連接部形成有半球 狀的焊料凸塊15。以構成第二層12的樹脂而言，不論正型、 負型’均可適用任何類型的感光性樹脂。以第二層〗2的材 料而言，係可使用例如聚醯亞胺樹脂、石夕氧樹脂、環氧樹 脂專各種樹脂材料。 在本貫施形態之半導體裝置1中，係藉由複數層保護層 形成有填充貫穿孔6内的保護層。藉此可提供在貫穿孔内部 確實填充有保護層的半導體裝置。 12 201201342 此外’本實施形態之半導體裝置1係具有以由正型感光 性樹脂所構成的第一層η至少被覆貫穿電極9的底面與側 面之間的交又部的構成。不論正型感光性樹脂中的感光反 應的大小，經過所希望的熱硬化處理後，可得具有定定強 度的樹脂層。在將感光性樹脂進行曝光時，在光不易到達 的貫穿孔内部，至少在覆貫穿電極9的底面與側面之間的交 叉部配置有由正型感光性樹脂所構成的第一層n。在如上 所示之構造中，可抑制在習知的半導體裝置中在貫穿電極9 的底面與側面之間的交叉部容易發生的保護層1〇的裂痕等 的發生。 其中，在本實施形態中，以第二層12的材料而言，係 採用負型感光性樹脂，但是並非侷限於負型，亦可採用正 型感光性樹脂。此外’若為可保護半導體基板2的第2面沘， 且以覆出再配線層8的-部分的方式予以圖案化的樹脂，則 可使用任何樹脂。 接著，參照第湖至第糊，說明本發明之實施形態 之半導體裝置之製造方法。第则至第找圖係使用剖面 圖，依序說明本發明之半導體裝置之製造方法之步驟的 圖。其中’關於第⑽至咖圖’係省略支持基板及接合 樹脂。 ，說明備妥 以下依序說明各步驟。首先，參照第2八圖 再配線層8及貫穿電極9已形成完畢的铸體基板2的步驟。 ⑴首先，備妥具備有魏元件4的半導體基板2,在半 導體基板2的帛l®2a形成電極科5歧線部I%步驟a)。 13 201201342 (2) 形成從半導體基板2的第2面2b到達電極焊墊5的貫 穿孔6(步驟B)。該貫穿孔6係以露出電極焊墊5的方式從半 導體基板2的第2面2b形成。貫穿孔6的直徑、剖面形狀並未 特別限定，但是可按照半導體基板2的厚度或半導體基板2 的用途(所希望的用途）來適當設定，且可按照所希望的配線 來適當決定。在本實施形態中，半導體基板2的厚度為 ΙΟΟμιη，貫穿孔6的孔徑為8〇μηι。 以貫穿孔6的形成方法而言，係可使用例如 DRIE(Deep-Reactive I〇n Etching，深式反應離子蝕刻）法、 濕式蝕刻法、藉由微小鑽頭等所為之機械加工法、光激發 電解研磨法等。 (3) 在貫穿孔6的側面及半導體基板2的第2面沘上形成 絕緣層7之後，形成電極焊墊5的露出部、被覆貫穿孔6的側 面的貫穿電極9、及被覆半導體基板2的第2面21?的再配線層 8(步驟C)。電極焊塾5與絕緣層7上的再西己線層8及貫穿電極 9係作電性連接。 絕緣層7係例如藉由利用„CVD等來成膜叫而形 成。再配線層8及貫穿電極9的形成方法並未特別限定，以 遠形成方法而言’例如可列麵鍍法、蒸鍍法、魏法等、 或者該等之2個以上的方法的組合。此外，以再配線層8及 貫穿電極9的圖案化方法而言，係適於使用光微影技術。 此外，在本實施形態'中，係以貫穿電極9被覆貫穿孔6 的全面而形成之例加以說明，但是若電極焊塾5與半導體基 板2的第2面2b的貫穿電極9作電性連接，則本發明並非限^ 14 201201342Equal conductors (various metals or alloys such as lW are suitable. ♦) second. (4) The materials after combination are more complicated. For example, the two-span and semi-conductor configurations between the _ and 262b of ::::=. The straight-bathed electrode 9 is accompanied by the (4) pass-through hole 6 on the semiconductor substrate. For example, the front P is made of the insulating layer 7, the rewiring, the germanium + conductor substrate 2 and the through hole 6 are fed to the layer 8 , and the through electrode 9 is used to cover the insulating layer 7 and the rewiring layer 8 . And through the electrode two to form this. In the semiconductor device 1 of the present embodiment, the protective layer is formed by the first layer 11 composed of the positive photosensitive resin and the second layer 12 composed of the negative photosensitive resin. 10. The first layer 11 is disposed at least inside the through hole 6 and is the layer closest to the first surface 2a of the semiconductor substrate 2 among the protective layer 10. The positive photosensitive resin refers to a photosensitive resin in which an exposed portion formed by exposing a resin is removed by a chemical solution. The negative photosensitive resin refers to a photosensitive resin which is removed by a drug other than the exposed portion by a drug night. As shown in Fig. 1, the first layer of the lanthanum is disposed close to the first surface 2a of the semiconductor substrate 2 in the inside of the through hole 6, that is, at a position (bottom side) close to the bottom of the through hole 6, covering the through electrode 9. The bottom surface 9a. The thickness of the first layer 11 is not particularly limited, and at least the intersection of the bottom surface 9a and the side surface 9b of the through electrode 9 is covered by the first layer of the positive photosensitive resin. As the material of the first layer 11, for example, various resin materials such as a polyimide resin, a silicone resin, and an epoxy resin can be applied. The second layer 12 covers the inner portion of the through hole 6 and the second surface 2b of the semiconductor substrate 2 so as to cover the first layer 11. The second layer 12 is patterned so as to expose at least the connection portion of the rewiring layer 8, and a hemispherical solder bump 15 is formed in the connection portion. For the resin constituting the second layer 12, any type of photosensitive resin can be applied regardless of the positive type or the negative type. In the case of the material of the second layer, it is possible to use various resin materials such as polyimine resin, stone oxide resin, and epoxy resin. In the semiconductor device 1 of the present embodiment, a protective layer filled in the through hole 6 is formed by a plurality of protective layers. Thereby, a semiconductor device which is surely filled with a protective layer inside the through hole can be provided. In the semiconductor device 1 of the present embodiment, the first layer η composed of the positive photosensitive resin is provided with at least a portion overlapping the bottom surface and the side surface of the through electrode 9. Regardless of the magnitude of the photosensitive reaction in the positive photosensitive resin, after a desired heat hardening treatment, a resin layer having a predetermined strength can be obtained. When the photosensitive resin is exposed, a first layer n made of a positive photosensitive resin is disposed at least at the intersection between the bottom surface and the side surface of the through-electrode 9 in the through hole where the light is hard to reach. In the above-described configuration, occurrence of cracks or the like of the protective layer 1〇 which is likely to occur at the intersection between the bottom surface and the side surface of the through electrode 9 in the conventional semiconductor device can be suppressed. In the present embodiment, the negative photosensitive resin is used as the material of the second layer 12, but it is not limited to the negative type, and a positive photosensitive resin may be used. Further, any resin can be used as the resin which can protect the second surface of the semiconductor substrate 2 and is patterned so as to cover the portion of the rewiring layer 8. Next, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to a lake to a paste. The first to the first drawing are views showing the steps of the method of manufacturing the semiconductor device of the present invention, using a cross-sectional view. Here, the "substituting (10) to the coffee chart" omits the support substrate and the bonding resin. , Description is ready The following steps are explained in order. First, the procedure of the re-wiring layer 8 and the cast substrate 2 in which the through electrodes 9 have been formed will be referred to in Fig. 2 . (1) First, the semiconductor substrate 2 having the Wei element 4 is prepared, and the electrode portion 5 is formed in the electrode portion 5 of the semiconductor substrate 2, step A). 13 201201342 (2) A through hole 6 is formed from the second surface 2b of the semiconductor substrate 2 to the electrode pad 5 (step B). The through hole 6 is formed from the second surface 2b of the semiconductor substrate 2 so as to expose the electrode pad 5. The diameter and cross-sectional shape of the through hole 6 are not particularly limited, but may be appropriately set in accordance with the thickness of the semiconductor substrate 2 or the use (desired use) of the semiconductor substrate 2, and may be appropriately determined in accordance with a desired wiring. In the present embodiment, the thickness of the semiconductor substrate 2 is ΙΟΟμηη, and the diameter of the through hole 6 is 8 〇μηι. In the method of forming the through holes 6, for example, a DRIE (Deep-Reactive I 〇 Etching) method, a wet etching method, a machining method by a micro drill or the like, and photoexcitation can be used. Electrolytic grinding method, etc. (3) After the insulating layer 7 is formed on the side surface of the through hole 6 and the second surface of the semiconductor substrate 2, the exposed portion of the electrode pad 5, the through electrode 9 covering the side surface of the through hole 6, and the covered semiconductor substrate 2 are formed. The rewiring layer 8 of the second surface 21? (step C). The electrode pad 5 is electrically connected to the re-Ning wire layer 8 and the through electrode 9 on the insulating layer 7. The insulating layer 7 is formed by, for example, forming a film by CVD or the like. The method of forming the rewiring layer 8 and the through electrode 9 is not particularly limited, and in terms of a far-forming method, for example, a surface plating method or an evaporation method can be used. A combination of two or more of these methods, such as Weifa, etc. Further, the patterning method of the rewiring layer 8 and the through electrode 9 is suitable for using a photolithography technique. In the above description, the through electrode 9 is formed so as to cover the entire surface of the through hole 6. However, the present invention is not limited to the case where the electrode pad 5 is electrically connected to the through electrode 9 of the second surface 2b of the semiconductor substrate 2. ^ 14 201201342
於上述構造。例如亦可在貫穿孔6的側面以線狀形成貫穿 極9 〇 經由以上步驟A至步驟C，可備妥如第2A圖所示之形成 有再配線層8及貫穿電極9的半導體基板2。 (4) 將正型感光性樹脂ila塗敷在半導體基板2的第2面 2b，被覆再配線層8及貫穿電極9,在貫穿孔6的内部填充正 型感光性樹脂11a(步驟D)。 正型感光性樹脂11a係以低黏度的液狀樹脂為佳，俾以 供樹脂可輕易進入貫穿孔6的内部。具體而言，可適用黏户 50〜3〇〇cp的正型感光性樹脂。 又 以正型感光性樹月曰11 a的塗敷方法而言，以樹脂可進入 至貫穿孔6的内部的方式為佳》例如以旋塗法、噴塗法等為 佳。以其他方法而言，亦可採用在真空壓下塗佈正型感光 性樹脂11a之後，將半導體基板2恢復至大氣壓環境下，藉 此差壓填充至貫穿孔6的内部的手法。 (5) 對半導體基板2的第2面2b照射曝光光線6〇(步驟 E)。以曝光光線60而言，係使用包含感光性樹脂之感光皮 長的光。最適於曝光的感光波長係依樹脂材料而異，但— 般而言係以使用被稱為g、h、i線的紫外線範圍的光為佳。 (6) 如第2C圖所示，以至少在貫穿電極9的底面％與側 面9b之間的交叉部殘留正型感光性樹脂Ua的方式，進行正 型感光性樹脂的顯影（步驟F)。藉由該顯影，以到達至相對 貫穿孔6的深度的一半程度的深度的方式將樹脂顯影，被塗 敷在半導體基板2的第2面2b上的正型感光性樹脂lla會，肖 15 201201342 失，而且被配置在接近貫穿電極9的底面％的位置的正型感 光性樹脂1 la則會殘留。在顯影步驟中所使用的顯影液係可 依感光性樹脂的種類而定。 接著，在該狀態下進行熱處理，使正型感光性樹脂的 多餘感光基成分、〉谷劑成分寺揮發，而產生熱硬化反麻。 (7)將負型感光性樹脂12a被覆在半導體基板2的第2面 2b，將負型感光性树脂12a填充在貫穿孔6的内部（步驟。 如第2D圖所示，將負型感光性樹脂i2a塗敷在第2面2b 上。以負型感光性樹脂12a的塗佈方法而言，係可採用旋塗 法、膜積層法、喷塗法等。此外，亦可採用在真空壓下塗 佈負梨感光性樹脂12a之後，使半導體基板2恢復成大氣壓 環境下’藉此藉由差壓填充而在貫穿孔6的内部填充樹脂的 手法。 接著’使用光微影法’將負型感光性樹脂12a進行圖案 加工。具體而言’如第2D圖所示’對負型感光性樹脂12a 透過光罩70照射曝光光線60 ’而將遮罩圖案轉印在負型感 光性樹脂12a ° 接著，如第2E圖所示，將負型感光性樹脂12a顯影而去 除不必要的感光性樹脂。對殘留下來的感光性樹脂12a施行 硬化及除渣(〇escum)。最後形成焊料凸塊15，可得第1圖所 示之半導體裝置1。 第1實施形態之半導體基板1係可利用如上所示之方法 來製造。藉由以如上所示之方法予以製造，在光不易到達 的貫穿孔6的底部填充正型感光性樹脂1 la，因此貫穿孔6的 16 201201342 底部以正型感光性樹脂lla確實覆蓋。 此外，在上述製造方法中，藉由僅有一次的塗佈步驟 而形成有正型感光性樹脂lla，惟本發明並非限定於上述方 法。亦可反覆進行複數次正型感光性樹脂lla的塗佈步驟， 亦即，亦可使用在實施複數次步驟D至步驟F之後，再塗佈 負型感光性樹脂12a的製造方法。 如上所示，藉由反覆進行複數次正型感光性樹脂lla的 塗佈、曝光、感光性樹脂的去除，在貫穿孔的内部填充少 量的樹脂，之後，以重疊在之前所填充的樹脂上的方式在 貫穿孔的内部填充樹脂。亦即，在貫穿孔6的内部逐次少許 填充樹脂。因此，在貫穿孔的内部更加確實填充樹脂，使 得填充不良不易發生。 此外，以第二層12的材料而言，亦可使用正型感光性 樹脂，而非偈限於負型感光性樹脂。此外，若為可保護半 導體基板2的第2面2b，且以露出再配線層8的一部分的方式 予以圖案化的樹脂，則可使用任何樹脂。 接著，根據圖示，說明本發明之第3至第6實施形態。 第3圖至第7圖係顯示本發明之半導體裝置之實施形態 之一例的剖面圖。在第3圖至第7圖中，對於與第1實施形態 相同的構件標註相同的元件符號，且省略或簡化其說明， 僅以第1實施形態與第3至第6實施形態之不同之處為中心 加以敘述。 (第2實施形態） 在第3圖所示之第2實施形態中，保護層10b係由：由正 17 201201342 型感光性樹脂所構成的第一層]lb、第二層13b、及被配置 在第一層lib與第二層13b之間的第三層12b所構成。在形成 第一層lib之後以適當成膜方法予以成膜，藉此可形成第三 層 12b。 該第三層12b係藉由對第一層lib及第二層13b雙方樹 脂具有接著性的材料所形成。第三層12b並不限於樹脂層， 亦可為金屬層。在如上所示之構成中，若第一層lib與第二 層13b的接著性不高時，使第三層12b介於兩層之間，藉此 可使第一層lib與第二層13b的接著性提高。 (第3實施形態） 在第4圖所示之第3實施形態中，構成保護層10c的第一 層11c並非形成在接近貫穿電極9的底面9a的中心的位置， 而是以僅覆蓋貫穿電極的底面9a與側面9b之間的交叉部的 方式所形成。在該構成中，僅有最不易填充的貫穿電極9的 底面與側面之間的交叉部以少量的第一層11c所填充，接著 在貫穿孔6内填充第二層12c。藉由該方法，不會在貫穿孔6 内發生孔洞，而可確實填充。 (第4實施形態） 在第5圖所示之第4實施形態中，構成保護層10d的第一 層lid的形狀並不需要在包含貫穿孔6的中心點，並且沿著 與半導體基板2呈垂直的任意面的剖面中呈對稱形。亦即， 亦可以非對稱形的形狀來形成因曝光而殘留的第一層lid。 (第5實施形態） 在第6圖所示之第5實施形態中，構成保護層10e的第一 18 201201342 層1 le亦可具有其中心部朝上方隆起的凸形狀。 (第6實施形態） 在第7圖所示之第6實施形態中，係可配合保護層的功 能而使用複數層，藉此形成保護層l〇f。在第7圖所示之例 中，保護層10f係由第一層Ilf、第二層12f、第三層13f、第 四層14f所構成。如上所示，若由複數樹脂層構成保護層10f 時，可形成具有與各個層所實現的目的相對應的功能的保 護層1 Of。例如，以第一層11 f及第三層13f的材料而言，適 用可輕易填充在貫穿孔的材料，以第二層12f及第四層14f 的材料而言，可適用作為保護再配線的保護膜而發揮功能 的材料或圖案加工性佳的材料。 本發明係可廣泛適用在具備有貫穿電極的半導體裝置 及其製造方法。 【圖式簡單說明3 第1圖係本發明之半導體裝置之第1實施形態的剖面圖。 第2A圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2B圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2C圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2D圖係說明本發明之半導體裝置之製造方法之步驟 的說明圖。 第2E圖係說明本發明之半導體裝置之製造方法之步驟 19 201201342 的說明圖。 第3圖係本發明之半導體裝置之第2實施形態的剖面圖 第4圖係本發明之半導體裝置之第3實施形態的剖面圖 第5圖係本發明之半導體裝置之第4實施形態的剖面圖 第6圖係本發明之半導體裝置之第5實施形態的剖面圖 第7圖係本發明之半導體裝置之第6實施形態的剖面圖 第8圖係習知之半導體裝置的剖面圖。 【主要元件符號說明 1、 101...半導體裝置 2、 102…半導體基板 2a、102a...第 1 面 2b、102b···第 2 面 3、 103…絕緣部 4、 104...電路元件 5、 105...電極焊墊 6、 106...貫穿孔 7、 107…絕緣層 8、 108...再配線層 9、 109...貫穿電極 9a、109a.·.底面 9b、109b...側面 10、 10b、10c、10d、10e、10f... 保護層 11 a...感光性樹脂 1 1 卜 lib、11c、lid、lie、Ilf·.· 第一層 12、13b、12f···第二層 12a...負型感光性樹脂 12b、12c、13f...第三層 14f··.第四層 15.. .焊料凸塊 19.. .配線部 20.. .支持基板 21.. .接合樹脂 60.. .曝光光線 70.. .光罩 110.. .保護層 119.. .配線部 151…孔洞 152.. .空隙 20In the above configuration. For example, the penetrating electrode 9 may be formed linearly on the side surface of the through hole 6. Through the above steps A to C, the semiconductor substrate 2 on which the rewiring layer 8 and the penetrating electrode 9 are formed as shown in Fig. 2A can be prepared. (4) The positive photosensitive resin ila is applied to the second surface 2b of the semiconductor substrate 2, the rewiring layer 8 and the through electrode 9 are covered, and the positive photosensitive resin 11a is filled in the inside of the through hole 6 (step D). The positive photosensitive resin 11a is preferably a low-viscosity liquid resin, and the resin can easily enter the inside of the through-hole 6. Specifically, a positive photosensitive resin having a viscosity of 50 to 3 cp can be applied. Further, in the coating method of the positive photosensitive tree 曰 11 a, it is preferable that the resin can enter the inside of the through hole 6, for example, a spin coating method, a spray coating method, or the like. In other methods, the method of returning the semiconductor substrate 2 to an atmospheric pressure environment after applying the positive photosensitive resin 11a under vacuum pressure, and then filling the inside of the through hole 6 by differential pressure may be employed. (5) The second surface 2b of the semiconductor substrate 2 is irradiated with exposure light 6 (step E). In the case of the exposure light 60, light containing a photosensitive skin length of a photosensitive resin is used. The photosensitive wavelength most suitable for exposure varies depending on the resin material, but it is generally preferred to use light in the ultraviolet range called g, h, and i lines. (6) As shown in Fig. 2C, development of the positive photosensitive resin is carried out so that the positive photosensitive resin Ua remains at the intersection between the bottom surface % of the through electrode 9 and the side surface 9b (step F). By this development, the resin is developed so as to reach a depth of about half the depth of the through hole 6, and the positive photosensitive resin 11a applied to the second surface 2b of the semiconductor substrate 2 will be opened. The positive photosensitive resin 1 la disposed at a position close to the bottom surface of the through electrode 9 remains. The developing solution used in the developing step may be determined depending on the kind of the photosensitive resin. Then, heat treatment is performed in this state, and the excess photosensitive base component of the positive photosensitive resin and the granule component are volatilized to cause thermal hardening. (7) The negative photosensitive resin 12a is coated on the second surface 2b of the semiconductor substrate 2, and the negative photosensitive resin 12a is filled in the inside of the through hole 6. (Step 2) As shown in Fig. 2D, negative sensitivity is used. The resin i2a is applied to the second surface 2b. The method of applying the negative photosensitive resin 12a may be a spin coating method, a film deposition method, a spray coating method, or the like. After the negative-pear photosensitive resin 12a is applied, the semiconductor substrate 2 is returned to the atmosphere under the atmospheric pressure environment, whereby the resin is filled in the inside of the through-hole 6 by differential pressure filling. Next, the 'light lithography method' is used for the negative type. The photosensitive resin 12a is patterned. Specifically, as shown in FIG. 2D, the negative photosensitive resin 12a is irradiated with the exposure light 60' through the mask 70, and the mask pattern is transferred to the negative photosensitive resin 12a. Next, as shown in Fig. 2E, the negative photosensitive resin 12a is developed to remove unnecessary photosensitive resin. The remaining photosensitive resin 12a is cured and scummed. Finally, solder bumps 15 are formed. The semiconductor device 1 shown in Fig. 1 can be obtained. The semiconductor substrate 1 of the first embodiment can be produced by the method described above. By manufacturing as described above, the positive photosensitive resin 1 la is filled in the bottom of the through hole 6 where light is hard to reach. The bottom of 16 201201342 of the hole 6 is covered with the positive photosensitive resin 11a. Further, in the above manufacturing method, the positive photosensitive resin 11a is formed by only one application step, but the present invention is not limited to the above. Alternatively, the application step of the positive photosensitive resin 11a may be repeated, that is, a method of applying the negative photosensitive resin 12a after performing the plurality of steps D to F may be used. In the above, the application of the positive-type photosensitive resin 11a, the exposure, and the removal of the photosensitive resin are repeated, and a small amount of resin is filled in the inside of the through-hole, and then superimposed on the previously filled resin. The inside of the through hole is filled with a resin. That is, the resin is slightly filled in the inside of the through hole 6. Therefore, the resin is more reliably filled in the inside of the through hole, so that In addition, a positive photosensitive resin may be used as the material of the second layer 12, and the negative photosensitive resin may be used instead of the negative photosensitive resin. Further, the second surface 2b of the semiconductor substrate 2 can be protected. Any resin can be used to form a resin which is patterned to expose a part of the rewiring layer 8. Next, the third to sixth embodiments of the present invention will be described with reference to the drawings. Fig. 3 to Fig. 7 A cross-sectional view showing an example of an embodiment of the semiconductor device of the present invention. In the third to seventh embodiments, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified. The difference between the first embodiment and the third to sixth embodiments will be described. (Second Embodiment) In the second embodiment shown in Fig. 3, the protective layer 10b is composed of a first layer lb, a second layer 13b, and a yellow resin composed of a positive resin of the type 201201,342,342. The third layer 12b is formed between the first layer lib and the second layer 13b. After the first layer lib is formed, a film is formed by a suitable film formation method, whereby the third layer 12b can be formed. The third layer 12b is formed of a material having a bonding property to both the first layer lib and the second layer 13b. The third layer 12b is not limited to the resin layer, and may be a metal layer. In the configuration shown above, if the adhesion between the first layer lib and the second layer 13b is not high, the third layer 12b is interposed between the two layers, whereby the first layer lib and the second layer 13b can be made. The adhesion is improved. (Third Embodiment) In the third embodiment shown in Fig. 4, the first layer 11c constituting the protective layer 10c is not formed at a position close to the center of the bottom surface 9a of the through electrode 9, but covers only the through electrode. The intersection between the bottom surface 9a and the side surface 9b is formed. In this configuration, only the intersection between the bottom surface and the side surface of the through-electrode 9 which is the least difficult to fill is filled with a small amount of the first layer 11c, and then the second layer 12c is filled in the through hole 6. According to this method, holes are not generated in the through holes 6, but can be surely filled. (Fourth Embodiment) In the fourth embodiment shown in Fig. 5, the shape of the first layer lid constituting the protective layer 10d does not need to be at the center point including the through hole 6, and is along the semiconductor substrate 2. The cross section of any of the vertical faces is symmetrical. That is, the first layer lid remaining due to exposure may also be formed in an asymmetrical shape. (Fifth Embodiment) In the fifth embodiment shown in Fig. 6, the first layer 18 201201342 constituting the protective layer 10e may have a convex shape in which the center portion thereof is raised upward. (Sixth embodiment) In the sixth embodiment shown in Fig. 7, a plurality of layers can be used in combination with the function of the protective layer, whereby the protective layer 10f can be formed. In the example shown in Fig. 7, the protective layer 10f is composed of a first layer 11f, a second layer 12f, a third layer 13f, and a fourth layer 14f. As described above, when the protective layer 10f is composed of a plurality of resin layers, the protective layer 1 Of having a function corresponding to the purpose achieved by each layer can be formed. For example, in the case of the materials of the first layer 11 f and the third layer 13 f , a material which can be easily filled in the through holes is applied, and as the material of the second layer 12 f and the fourth layer 14 f , it can be suitably used as a protective rewiring. A material that has a protective film function and a material with good pattern processing properties. The present invention is widely applicable to a semiconductor device having a through electrode and a method of manufacturing the same. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a first embodiment of a semiconductor device according to the present invention. Fig. 2A is an explanatory view showing the steps of a method of manufacturing a semiconductor device of the present invention. Fig. 2B is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2C is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2D is an explanatory view showing the steps of the method of manufacturing the semiconductor device of the present invention. Fig. 2E is an explanatory view showing a step 19 201201342 of the method of manufacturing the semiconductor device of the present invention. Fig. 3 is a cross-sectional view showing a second embodiment of the semiconductor device of the present invention. Fig. 4 is a cross-sectional view showing a third embodiment of the semiconductor device of the present invention. Fig. 5 is a cross section showing a fourth embodiment of the semiconductor device of the present invention. Fig. 6 is a cross-sectional view showing a fifth embodiment of a semiconductor device according to the present invention. Fig. 8 is a cross-sectional view showing a semiconductor device according to a sixth embodiment of the present invention. [Main component code description 1, 101... Semiconductor device 2, 102... Semiconductor substrate 2a, 102a... First surface 2b, 102b... Second surface 3, 103... Insulation portion 4, 104... Circuit Element 5, 105...electrode pad 6,106...through hole 7,107...insulation layer 8,108...rewiring layer 9,109...through electrode 9a,109a.. bottom surface 9b, 109b... side 10, 10b, 10c, 10d, 10e, 10f... protective layer 11 a... photosensitive resin 1 1 lib, 11c, lid, lie, Ilf·.· first layer 12, 13b 12f···Second layer 12a... Negative photosensitive resin 12b, 12c, 13f... Third layer 14f··. Fourth layer 15.. Solder bump 19.. Wiring portion 20. Supporting substrate 21.. Bonding resin 60.. Exposure light 70.. reticle 110.. Protective layer 119.. Wiring portion 151... Hole 152.. Void 20