201209863 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種電容器結構及其製法，特別是指一 種可產生高介電常數之超電容器（ultracapacitor)結構。 【先前技術】 有一些關於大電容的習知技術，例如S.K. Saha*，et al, A nanocapacitor with giant dielectric permittivity” ，Nano technology, 1 7, 2284, 2006, and S.K. Saha*, Observation of • giant dielectric constant in an assembly of ultrafine A g particles” ，Phys. Rev. B, 69，125416，2004，係揭示一種製 造具有高介電常數之電容器結構的方法，其係在兩個寬爲 奈米尺寸、長爲微米尺寸之上、下金屬電極板間嵌入埋有 或塡滿金屬原子（例如：金）之絕緣體，以產生高介電常數 ε =107之電容器。 此外，上述習知技術也揭露一種在兩電極板間的多孔 絕緣物質內，埋入金屬絲，以產生高介電常數ε = 1(V°之電容 φ 器結構的製造方法。 然而，上述習知技術所揭露之製作高電容的方法因絕 緣層太厚（約五十微米（# m)以上），故依該理論即使介電常 數正比於絕緣層厚度的平方，根據C/V(單位體積電容）=常 數，也無法造成高密度之儲電效果。 因此，針對上述習知技術之缺失，本發明提供一種介 電常數甚大且與絕緣層厚度無關之電容器結構。 【發明內容】 [S3 201209863 本發明之目的係提供一種具有高絕緣性與高介電常數 的電容器結構。 本發明之再一目的係提供一種與電極板相鄰接之水平 奈米點層以及與該水平奈米點層相鄰接之垂直奈米點層之 電容器結構，並藉由水平奈米點層爲降低漏電之用，而垂 直磁場之奈米點層造成在水平方向之週期性磁場，進而造 成極化現象來提高介電常數。 本發明之另一目的係提供一種以奈米點所構成之奈米 φ 點層，其中該奈米點之形狀可爲球狀、橄欖狀、柱狀、條 狀及錐狀之其中一種，較佳爲橢圓狀、柱狀或條狀，並且 該奈米點層係以該等奈米點之長軸方向爲磁化方向（但不 侷限於此），藉以配置水平奈米點層與垂直奈米點層，俾達 到增大介電常數之功效。 本發明之再一目的係提供一種於上電極下及下電極上 分別鄰接有長短兩層水平奈米點層之電容器結構（如第三 圖以及第四圖所示），藉由長水平奈米點層之磁場限制短奈 • 米點層之磁場的作用，使上下電極板間之水平磁場更強與 集中，以及在水平奈米點層與垂直奈米點層之間的作用 下，使得所製出之電容器結構具有高介電常數。 依照本發明具有超高電容及低漏電之電容器結構的第 一態樣，電容器結構由上而下依序包含：導電上電極板； 第一水平奈米點層，其由單層或多層以複數奈米點所組成 之上磁性板所構成，且配置於該導電上電極板下，其中該 等奈米點之磁化方向爲平行於該導電上電極板之方向；第 [S} -4- 201209863 一垂直奈米點層，其由單層或多層以複數奈米點所組成之 上磁性板所構成，且配置於該第一水平奈米點層下’其中 該等奈米點之磁化方向爲垂直於該導電上電極板之長度方 向：第二垂直奈米點層，其由單層或多層以複數奈米點所 組成之下磁性板所構成，其中該等奈米點之磁化方向爲垂 直於該導電上電極板之長度方向；至少一層絕緣層’嵌入 於該第一垂直奈米點層與該第二垂直奈米點層之間；第二 水平奈米點層，其由單層或多層以複數奈米點所組成之下 φ 磁性板所構成，且配置於該第二垂直奈米點層下’其中該 等奈米點之磁化方向爲平行於該導電上電極板之長度方 向；以及導電下電極板，配置於該第二水平奈米點層下方。 依照本發明具有超高電容及低漏電之電容器結構的第 二態樣，電容器結構包含：導電上電極板；第一垂直奈米 點層，其由單層或多層以複數奈米點所組成之上磁性板所 構成，且配置於該導電上電極板上，其中該等奈米點之磁 化方向爲垂直於該導電上電極板之長度方向；第一水平奈 # 米點層，其由單層或多層以複數奈米點所組成之上磁性板 所構成，且配置於該第一垂直奈米點層上，其中該等奈米 點之磁化方向爲平行於該導電上電極板之方向；導電下電 極板；至少一層絕緣層，嵌入於該導電上電極板與該導電 下電極板之間；第二垂直奈米點層，其由單層或多層以複 數奈米點所組成之下磁性板所構成，且配置於該導電下電 極板下，其中該等奈米點之磁化方向爲垂直於該導電下電 極板之長度方向；以及第二水平奈米點層，其由單層或多 [s ] 201209863 層以複數奈米點所組成之下磁性板所構成，且配置於該第 二垂直奈米點層下，其中該等奈米點之磁化方向爲平行於 該導電上電極板之長度方向。 依照本發明具有超高電容之電容器結構的第三態樣， 電容器結構由上而下依序包含：導電上電極板；第一垂直 奈米點層，其由單層或多層以複數奈米點所組成之上磁性 板所構成，且配置於該導電上電極板下，其中該等奈米點 之磁化方向垂直於該導電上電極板之長度方向；第二垂直 φ 奈米點層，其由單層或多層以複數奈米點所組成之下磁性 板所構成，其中該等奈米點之磁化方向垂直於該導電上電 極板之長度方向；至少一層絕緣層，嵌入於該第一垂直奈 米點層與該第二垂直奈米點層之間；以及導電下電極板， 配置於該第二垂直奈米點層下方。 依照本發明具有超高電容之電容器結構的第四態樣， 電容器結構包含：導電上電極板；第一垂直奈米點層，其 由單層或多層以複數奈米點所組成之上磁性板所構成，且 • 配置於該導電上電極板上，其中該等奈米點之磁化方向垂 直於該導電上電極板之長度方向；導電下電極板；至少一 層絕緣層，嵌入於該導電上電極板與該導電下電極板之 間；以及第二垂直奈米點層，其由單層或多層以複數奈米 點所組成之下磁性板所構成，且配置於該導電下電極板下 方，其中該等奈米點之磁化方向垂直於該導電上電極板之 長度方向。 依照本發明具有低漏電之電容器結構的第五態樣，電 201209863 容器結構由上而下依序包含：導電上電極板；第一水平奈 米點層，其由單層或多層以複數奈米點所組成之上磁性板 所構成，且配置於該導電上電極板下，其中該等奈米點之 磁化方向平行於該導電上電極板之長度方向；第二水平奈 米點層，其由單層或多層以複數奈米點所組成之下磁性板 所構成，其中該等奈米點之磁化方向平行於該導電上電極 板之長度方向；至少一層絕緣層，嵌入於該第一水平奈米 點層與該第二水平奈米點層之間；以及導電下電極板，配 φ 置於該第二水平奈米點層下方。 依照本發明具有低漏電之電容器結構的第六態樣，電 容器結構包含：導電上電極板；第一水平奈米點層，其由 ‘單層或多層以複數奈米點所組成之上磁性板所構成，且配 置於該導電上電極板上，其中該等奈米點之磁化方向平行 於該導電上電極板之長度方向；導電下電極板；至少一層 絕緣層，嵌入於該導電上電極板與該導電下電極板之間； 以及第二水平奈米點層，其由單層或多層以複數奈米點所 • 組成之下磁性板所構成，且配置於該導電下電極板下方， 其中該等奈米點之磁化方向平行於該導電下電極板之長度 方向。 如上述第五態樣與第六態樣之電容器結構’其中在該 第一水平奈米點層下更包含一第三水平奈米點層，並且在 該第二水平奈米點層上更包含一第四水平奈米點層’其中 該第一水平奈米點層之長度大於該第三水平奈米點層’該 第二水平奈米點層之長度大於該第四水平奈米點層。 [s] 201209863 如上述電容器結構，其中該第一垂直奈米點 二垂直奈米點層中之該等奈米點之垂直方向磁場 導電上電極板或該導電下電極板之水平磁化方向 期性大小變化。 如上述電容器結構，其中構成該第一水平奈 該第二水平奈米點層、該第一垂直奈米點層以及 直奈米點層之奈米點的形狀爲球狀、橄欖狀、柱 及錐狀之其中一種’較佳爲橢圓形、柱狀或條狀 φ 等奈米點之長軸方向與奈米點之磁化方向一致。 如上述電容器結構，其中該導電上電極板及 電極板係由銘（A1)、鎢（W)及钽（Ta)或其他可導電 其合金之其中一者所構成。 如上述電容器結構，其中構成該第一水平奈 該第二水平奈米點層、該第一垂直奈米點層以及 直奈米點層之奈米點的形狀可爲球狀、橄欖狀、 狀及錐狀之其中一種，較佳爲橢圓形、柱狀或條 # 該等奈米點之長軸方向與奈米點之磁化方向—致 強磁化效果。 如上述電容器結構，其中，該等奈米點係E CoFe、Co-Fe-Ni及其合金之其中一者或其他鐵磁 構成。 如上述電容器結構，其中該等奈米點係在真 氦及氖之其中一者或其他鈍氣中以高於室溫之高 形成。 層與該第 係沿著該 而呈現週 米點層、 該第二垂 狀、條狀 ，並且該 該導電下 之金屬及 米點層、 該第二垂 柱狀、條 狀，並且 ，則更加 ^ P t F e ' 性材料所 空、氨' 溫退火而 201209863 如上述電容器結構’其中該絕緣層係由單層或多層之 Al2〇3、Si〇2、SiNx、Ti〇2 及 BaTi〇3 之其中一者、具有絕緣 性質的介電物質所構成° 如上述電容器結構’其中在該第—水平奈米點層以及 該第一垂直奈米點層之間更包含一第三水平奈米點層’並 且在該第二水平奈米點層以及該第二垂直奈米點層之間更 包含一第四水平奈米點層’其中該第一水平奈米點層之長 度大於該第三水平奈米點層’該第二水平奈米點層之長度 φ 大於該第四水平奈米點層’並且該第三及第四水平奈米點 層係由單層或多層以複數奈米點所組成之磁性板所構成’ 且該等奈米點之磁化方向爲平行於該導電上電極板或該導 電下電極板之長度方向" 如上述電容器結構’其中該第一及第二垂直奈米點層 之長度相同於該第三及第四奈米點層之長度。 如上述電容器結構，其中該電容器結構可連結到一電 子裝置，用以儲存電能或作爲電源。此外’上述電容器結 φ 構可作爲至少包含開關器、保險絲器或變頻器之電路的保 護及/或穩壓元件。 本發明之電夸器結構之功效在於：藉由該第—及第二 水平奈米點層（或者該第一至第四水平奈米點層）所形成之 水平方向磁場，可提高電容器結構之絕緣性：以及藉由該 第一及第二垂直奈米點層之奈米點所形成之垂直方向磁 場，可提高電容器結構之介電常數値。 本發明之另一目的係提供一種製造電容器結構之方 [S1 201209863 法，其包含下列步驟： a) 使用蒸鍍、濺鍍、化學氣相沉積或者光阻旋轉塗 佈等方式在一基材上沉積一由導電材料（諸如，鋁、摻雜的 半導體、鎢、矽、氮化鈦或導電高分子等）所構成之第一電 極層； b) 在該第一電極層上沉積由鐵電材料（諸如，鐵化 鈾、鈷化鐵、鐵鈷鎳合金等），接著執行下列步驟之一： 1. 利用諸如文獻 1(C.K.Yin etal，Appl. Phys. Letts.， φ 89,063 109,2006)或文獻2(贾.11.(^6116131，八？？1·201209863 VI. Description of the Invention: [Technical Field] The present invention relates to a capacitor structure and a method of fabricating the same, and more particularly to an ultracapacitor structure capable of generating a high dielectric constant. [Prior Art] There are some conventional techniques for large capacitance, such as SK Saha*, et al, A nanocapacitor with giant dielectric permittivity", Nano technology, 1 7, 2284, 2006, and SK Saha*, Observation of • giant dielectric Constant in an assembly of ultrafine A g particles" , Phys. Rev. B, 69, 125416, 2004, discloses a method of fabricating a capacitor structure having a high dielectric constant, which is two nanometers in width and long in length. An insulator buried or filled with metal atoms (for example, gold) is interposed between the micron-sized and lower metal electrode plates to produce a capacitor having a high dielectric constant ε = 107. In addition, the above-mentioned prior art also discloses a method of manufacturing a capacitor φ device structure in which a metal wire is buried in a porous insulating material between two electrode plates to produce a high dielectric constant ε = 1 (V°). The method for fabricating high capacitance disclosed by the prior art is that the insulating layer is too thick (about 50 micrometers (# m) or more), so according to the theory, even if the dielectric constant is proportional to the square of the thickness of the insulating layer, according to C/V (unit volume) Capacitance)=constant cannot cause high-density power storage effect. Therefore, in view of the above-mentioned shortcomings of the prior art, the present invention provides a capacitor structure having a large dielectric constant and independent of the thickness of the insulating layer. [S3 201209863] It is an object of the present invention to provide a capacitor structure having high insulation and high dielectric constant. A further object of the present invention is to provide a horizontal nano-dot layer adjacent to an electrode plate and to be associated with the horizontal nano-dot layer The capacitor structure of the adjacent vertical nano-dot layer, and the horizontal nano-layer layer is used for reducing leakage, and the nano-dot layer of the vertical magnetic field causes the periodic magnetic field in the horizontal direction Further, a polarization phenomenon is caused to increase the dielectric constant. Another object of the present invention is to provide a nanometer φ dot layer composed of nano-dots, wherein the nano-dots may have a spherical shape, an olive shape, or a column shape. One of a strip shape and a taper shape, preferably elliptical, columnar or strip-shaped, and the nano-dot layer is magnetized in the direction of the major axis of the nano-dots, but is not limited thereto. By arranging the horizontal nano-dot layer and the vertical nano-dot layer, the effect of increasing the dielectric constant is achieved. A further object of the present invention is to provide a horizontal and a short layer of horizontal nanoparticles adjacent to the lower electrode and the lower electrode, respectively. The capacitor structure of the point layer (as shown in the third and fourth figures), by limiting the magnetic field of the short nanometer layer by the magnetic field of the long horizontal nano-layer, makes the horizontal magnetic field between the upper and lower electrodes stronger. With the concentration, and between the horizontal nano-dot layer and the vertical nano-dot layer, the fabricated capacitor structure has a high dielectric constant. According to the present invention, the capacitor structure having ultra-high capacitance and low leakage current One aspect, capacitor The structure comprises: a conductive upper electrode plate; a first horizontal nano-point layer, which is composed of a single layer or a plurality of layers of magnetic layers composed of a plurality of nano-dots, and is disposed on the conductive upper electrode plate Wherein the magnetization direction of the nano-dots is parallel to the direction of the conductive upper electrode plate; [S} -4- 201209863 a vertical nano-dot layer consisting of a single layer or multiple layers of multiple nano-dots The upper magnetic plate is disposed and disposed under the first horizontal nano-layer layer, wherein the magnetization direction of the nano-points is perpendicular to the length direction of the conductive upper electrode plate: a second vertical nano-dot layer, The magnetic plate is composed of a single layer or a plurality of layers composed of a plurality of nano-dots, wherein a magnetization direction of the nano-dots is perpendicular to a length direction of the conductive upper electrode plate; at least one insulating layer is embedded in the first Between the vertical nano-dot layer and the second vertical nano-dot layer; the second horizontal nano-dot layer is composed of a single or multiple layers of φ magnetic plates composed of a plurality of nano-dots, and is disposed in the The second vertical nano-point layer under which the nano-points Magnetization direction is parallel to the length direction of the electrode plates; and a conductive lower electrode plate disposed below the second horizontal nano dot layer. According to a second aspect of the capacitor structure of the present invention having ultra-high capacitance and low leakage, the capacitor structure comprises: a conductive upper electrode plate; and a first vertical nano-dot layer composed of a plurality of nano-dots in a single layer or a plurality of layers. An upper magnetic plate is disposed on the conductive upper electrode plate, wherein a magnetization direction of the nano-dots is perpendicular to a length direction of the conductive upper electrode plate; and a first horizontal nanometer layer is formed by a single layer Or a plurality of layers of magnetic sheets formed by a plurality of nano-dots and disposed on the first vertical nano-dot layer, wherein magnetization directions of the nano-dots are parallel to the direction of the conductive upper electrode plate; a lower electrode plate; at least one insulating layer embedded between the conductive upper electrode plate and the conductive lower electrode plate; and a second vertical nano-dot layer, which is composed of a single layer or a plurality of layers and a plurality of nano-dots Constructed under the conductive lower electrode plate, wherein the magnetization direction of the nano-dots is perpendicular to the length direction of the conductive lower electrode plate; and the second horizontal nano-point layer is composed of a single layer or more [ s ] 201209863 Under plural points consisting of nano magnetic plate is constituted and disposed at the second vertical nano dot layer, wherein the magnetization direction of such nano point parallel to the longitudinal direction of the electrode plates. According to a third aspect of the capacitor structure having ultra-high capacitance according to the present invention, the capacitor structure comprises, in order from top to bottom: a conductive upper electrode plate; a first vertical nano-dot layer, which is composed of a single layer or a plurality of layers at a plurality of nano-dots The upper magnetic plate is formed and disposed under the conductive upper electrode plate, wherein a magnetization direction of the nano-dots is perpendicular to a length direction of the conductive upper electrode plate; and a second vertical φ nano-dot layer is formed by The single layer or the plurality of layers are formed by a magnetic plate composed of a plurality of nano-dots, wherein a magnetization direction of the nano-dots is perpendicular to a length direction of the conductive upper electrode plate; at least one insulating layer is embedded in the first vertical Between the rice dot layer and the second vertical nano-dot layer; and a conductive lower electrode plate disposed under the second vertical nano-dot layer. According to a fourth aspect of the capacitor structure having ultra-high capacitance according to the present invention, the capacitor structure comprises: a conductive upper electrode plate; and a first vertical nano-dot layer composed of a single layer or a plurality of layers of a plurality of nano-dots. Constructed on the conductive upper electrode plate, wherein the magnetization direction of the nano-dots is perpendicular to the length direction of the conductive upper electrode plate; the conductive lower electrode plate; at least one insulating layer embedded in the conductive upper electrode Between the plate and the conductive lower electrode plate; and a second vertical nano-dot layer, which is composed of a single layer or a plurality of layers of magnetic sheets composed of a plurality of nano-dots, and is disposed under the conductive lower electrode plate, wherein The magnetization directions of the nano-dots are perpendicular to the length direction of the conductive upper electrode plate. According to a fifth aspect of the capacitor structure having low leakage current according to the present invention, the 201209863 container structure comprises, in order from top to bottom, a conductive upper electrode plate; a first horizontal nano dot layer, which is composed of a single layer or a plurality of layers in a plurality of nanometers. a magnetic plate formed by the dots and disposed under the conductive upper electrode plate, wherein a magnetization direction of the nano-points is parallel to a length direction of the conductive upper electrode plate; and a second horizontal nano-layer layer The single layer or the plurality of layers is composed of a magnetic plate composed of a plurality of nano-dots, wherein the magnetization direction of the nano-dots is parallel to the length direction of the conductive upper electrode plate; at least one insulating layer is embedded in the first horizontal layer Between the rice layer and the second horizontal nano-layer; and a conductive lower electrode plate with φ placed below the second horizontal nano-layer. According to a sixth aspect of the capacitor structure having low leakage current according to the present invention, the capacitor structure comprises: a conductive upper electrode plate; and a first horizontal nano-dot layer composed of a single layer or a plurality of layers of a plurality of nano-dots. Constructed on the conductive upper electrode plate, wherein the magnetization direction of the nano-dots is parallel to the length direction of the conductive upper electrode plate; the conductive lower electrode plate; at least one insulating layer embedded in the conductive upper electrode plate And the second horizontal nano-layer layer; and the second horizontal nano-layer layer is composed of a single layer or a plurality of magnetic layers composed of a plurality of nano-dots, and is disposed under the conductive lower electrode plate, wherein The magnetization directions of the nano-dots are parallel to the length direction of the conductive lower electrode plate. The capacitor structure of the fifth aspect and the sixth aspect, wherein the third horizontal nano-layer is further included under the first horizontal nano-layer, and further included on the second horizontal nano-layer a fourth horizontal nano-dot layer 'where the length of the first horizontal nano-dot layer is greater than the third horizontal nano-dot layer' is greater than the fourth horizontal nano-dot layer. [s] 201209863 such as the above capacitor structure, wherein the horizontal magnetic direction of the vertical magnetic field conductive upper electrode plate or the conductive lower electrode plate of the nanometer points in the first vertical nano-point and two vertical nano-point layers Size changes. The capacitor structure, wherein the first horizontal layer of the second horizontal nano-dot layer, the first vertical nano-dot layer, and the nano-nano point layer have a spherical shape, an olive shape, a column, and One of the tapered shapes, preferably an elliptical, columnar or strip-shaped φ, has a major axis direction that coincides with the magnetization direction of the nano-dots. A capacitor structure as described above, wherein the conductive upper electrode plate and the electrode plate are composed of one of Ming (A1), tungsten (W) and tantalum (Ta) or other electrically conductive alloy. The capacitor structure, wherein the shape of the nano-pits constituting the first horizontal layer, the second horizontal nano-dot layer, the first vertical nano-dot layer, and the straight nano-dot layer may be spherical, olive, or And one of the cone shapes, preferably elliptical, columnar or strip # the long axis direction of the nano-dots and the magnetization direction of the nano-dots - a strong magnetization effect. A capacitor structure as described above, wherein the nano point is one of E CoFe, Co-Fe-Ni and an alloy thereof or other ferromagnetic composition. In the capacitor structure described above, wherein the nano-dots are formed at a temperature higher than room temperature in one of the true enthalpy and the other blunt gas. And the layer and the first line along which the circumferential point layer, the second vertical shape, the strip shape, and the conductive metal and rice layer, the second vertical column shape, the strip shape, and ^ P t F e ' The material is empty, ammonia 'temperature annealing and 201209863 such as the above capacitor structure 'where the insulating layer is composed of single layer or multiple layers of Al2〇3, Si〇2, SiNx, Ti〇2 and BaTi〇3 One of the dielectric materials having insulating properties, such as the capacitor structure described above, further comprising a third horizontal nano-dots between the first horizontal nano-dot layer and the first vertical nano-dot layer The layer 'and further includes a fourth horizontal nano-dot layer between the second horizontal nano-dot layer and the second vertical nano-dot layer, wherein the length of the first horizontal nano-dot layer is greater than the third level a nano-dot layer 'the length of the second horizontal nano-ply layer is greater than the fourth horizontal nano-dot layer' and the third and fourth horizontal nano-dot layers are composed of a single layer or a plurality of layers at a plurality of nano-dots The magnetic plates of the composition constitute 'and the magnetization directions of the nano-dots are parallel to the Length of the electrode plate of the lower plate or the upper electrode conductive " as the capacitor structure 'wherein the first and second vertical length of the nano dot layer in the same length of the third and fourth of the nano dot layer. A capacitor structure as described above, wherein the capacitor structure is connectable to an electronic device for storing electrical energy or as a power source. Further, the above capacitor junction structure can be used as a protection and/or voltage stabilizing element for a circuit including at least a switch, a fuse or a frequency converter. The utility of the electric quarter structure of the present invention is that the capacitor structure can be improved by the horizontal magnetic field formed by the first and second horizontal nano-dot layers (or the first to fourth horizontal nano-dot layers). Insulation: and the dielectric constant 値 of the capacitor structure can be increased by the vertical magnetic field formed by the nano-dots of the first and second vertical nano-dots. Another object of the present invention is to provide a method for fabricating a capacitor structure [S1 201209863, which comprises the following steps: a) using a vapor deposition, sputtering, chemical vapor deposition or photoresist coating on a substrate. Depositing a first electrode layer composed of a conductive material such as aluminum, doped semiconductor, tungsten, tantalum, titanium nitride or conductive polymer; b) depositing a ferroelectric material on the first electrode layer (such as ferric uranium, cobalt iron, iron cobalt nickel alloy, etc.), then perform one of the following steps: 1. Use, for example, Document 1 (CKYin etal, Appl. Phys. Letts., φ 89, 063 109, 2006) or Document 2 (Jia.11.(^6116131, 八??1·
Phys. Letts. ,92,062112,2008)所揭露之方式，藉由 真空或鈍氣（氬或氮等）退火以及微影製程形成鐵 磁電極； 2. 同時活化蒸鍍、濺鍍、化學氣相沈積後之絕緣材 料（諸如，二氧化矽、氮化矽等），將複數奈米點 嵌入該絕緣材料中； 在升高之磁化溫度（例如，300~ 1 000度）中實行真空或 # 鈍氣退火製程，以便在退火過程中，同時對該鐵磁電 極或者磁奈米點施加一水平磁場，以便形成一第一水 平奈米點層； c) 重複步驟b)，在該第一水平奈米點層上沉積鐵電 材料與絕緣材料（諸如，二氧化矽、氮化矽、氧化鋁等）’ 惟此時磁化溫度略低於步驟b)之磁化溫度且對該等奈米點 施加一垂直磁場，以便形成一第一垂直奈米點層： d) 利用蒸鍍、濺鍍或者化學氣相沈積等方式，在該 [S3 -10- 201209863 第一垂直奈米點層上沈積一絕緣層； e) 重複步驟c)以在該第一垂直奈米點層上形成一第 二垂直奈米點層； f) 重複步驟b)以在該第二垂直奈米點層上形成—第 二水平奈米點層；以及 g) 重複步驟a)以在該第二水平奈米點層上形成一第 二電極層。 如上述製造方法，其中更包含步驟b-l):在執行步驟 • b)之後，重複步驟b)以便在該第一水平奈米點層上形成一 長度小於該第一水平奈米點層上之第三水平奈米點餍；以 及步驟f-Ι):在執行步驟f)之前，重複步驟b)以便在該第 二垂直奈米點層上形成一長度等於該第三水平奈米點層之 第四水平奈米點層。 【實施方式】 .以下將配合實施例對本發明技術特點作進一步的說 明，實施例僅爲較佳代表的範例，而非用來限定本發明之 Φ 實施範圍。以下所使用的上、下、水平、垂直等方向性用 語，係爲了說明方便，而非限制本發明之範圍。 參閱第1圖，第1圖爲本發明之電容器結構之第一實 施例之示意圖。電容器結構C1由上至下依序包含一導電上 電極板6、一第一水平奈米點層11、一第一垂直奈米點層 12、一絕緣層13、一第二垂直奈米點層14、一第二水平奈 米點層15以及一導電下電極板7，其中該第一水平奈米點 層11及該第二水平奈米點層15在一水平磁化方向8(即與 E S1 -11 - 201209863 該上、下電極板6、7平行之方向）被磁化，而且可爲ptFe、 CoFe、Co-Fe-Ni及其合金之其中一種。此外，構成該第— 水平奈米點層11及該第二水平奈米點層15之鐵磁性材料 可爲例如球狀、橄欖狀、柱狀或錐狀奈米點所構成，較佳 爲橢圓形狀，該等水平奈米點層並具有數奈米至數微米之 尺寸。此外，該第一水平奈米點層11與該第二水平奈米點 層15中之鐵磁性材料可設計爲相同或不同。 在本實施例中，該絕緣層13由單層或多層相同或不同 • 之介電物質所構成，其中該介電物質可爲Al2〇 3、Si 〇2、 SiNx、Ti〇2、BaTi〇3及其合金之其中一種。當該絕緣層13 之多層結構爲不同介電物質時，則稱此多層結構爲超晶格 (super -lattices) ° 此外，該第一與第二水平奈米點層11、15係由複數以 水平方式配置之奈米點131所構成，以及該第一與第二垂 直奈米點層12、14係由複數以垂直方式配置之奈米點121 所構成，該等奈米點121及131具有奈米級尺寸且其形狀 ® 可爲球狀' 橄欖狀、柱狀及錐狀之其中一種，較佳爲橢圓 狀 '條狀或柱狀，但不侷限於此。該等奈米點121、131由 鐵磁性材料所構成，其中奈米點121係以一垂直磁化方向9 被磁化並且奈米點1 3 1係以一水平磁化方向8被磁化。該 等奈米點121、131可爲PtFe、CoFe、Co-Fe-Ni及其合金 之其中一種或其它鐵磁性材料所構成。 須注意的是，爲了使鄰接電極板之奈米點層更具有互 相垂直之磁場，本發明可利用奈米點之長軸方向爲施加磁 [S] -12- 201209863 場之方向。例如’如第1圖中所示’當將奈米點配置成其 長軸爲以橫軸方向來配置時’則所形成之奈米點層將成爲 可讓磁場更加集中之水平奈米點層11、15。同理’例如’ 當將奈米點配置成其長軸爲以縱軸方向來配置時’則所形 成之奈米點層將成爲使磁場更集中之垂直奈米點層12、 14。在此須強調說明的是，所施加之水平磁場/垂直磁場方 向平行/垂直於奈米點之長軸方向之用意是爲了使水平磁 場/垂直磁場能更加集中於所施加的奈米點層上’惟本發明 Φ 之水平磁場/垂直磁場之實施方向並非侷限於此 較佳地，構成該第一水平奈米點層η與該第二水平奈 米點層15、以及該第一垂直奈米點層12與該第二垂直奈 米點層1 4之該等奈米點1 2 1、1 3 1爲柑同的鐵磁性材料’ 但也可設計爲不同。 因此，藉由該等奈米點121及131所形成之互相垂直 磁場，可產生高絕緣性與高介電常數之電容器結構C1。此 乃因爲該等水平奈米點層Π、15之每個奈米點131會與最 # 接近該等垂直奈米點層12、14之奈米點121之間產生強大 的磁場，並且由於在兩組成對的奈米點12丨、131之間的磁 場很小，故沿著水平磁化方向8 (如第2圖中之X方向） 可產生週期性磁場。根據量子力學的計算會產生出週期性 的位能Ve(x)(如第2圖所示），如果上電極爲負’下電極 爲正，則所產生之偶極（Dipole)可具有巨大的儲電能力， 並且正電荷在每個週期位能的頂部且負電荷在底部。 此外，値得注意的是，由於該水平磁化方向8之磁場， [S1 -13- 201209863 由於量子化效應以及文獻P. Denk, et al，Phys V57，N20，12094-1 3098，1 998之理論與電磁原理和 效應（Quantum confinement effect)可降低穿隧電 流，故藉由該第一水平奈米點層11與該第二水平 15所形成之水平磁場可在該上電極板6與該下電 間產生高絕緣性。 較佳地，構成該第一水平奈米點層11、該第 米點層15、該第一垂直奈米點層12以及該第二 φ 點層14之該等奈米點121與131係在真空或例$丨 氖之鈍氣中以高溫退火之方式而形成，其中該 300~1000°C或更高。較佳地，該等奈米點層可藉 奈米點嵌入絕緣材料中，藉由蒸鍍、濺鍍、化學氣 方式而於高溫退火之製程中形成。因爲本發明之 構C1的各個構件可以利用濺鍍、沉積、蝕刻等半 來形成，因此可以很方便地達到微型積體化之目 此外，電容器結構1可連結到開關、保險絲 • 等元件，作爲該等元件之保護及穩壓元件。再者 器結構C1也可以連結到一電子裝置，作爲儲存電 之儲能元件。 參閱第3圖，第3圖爲本發明之電容器結構 施例之示意圖。第3圖與第1圖之結構相似，其 之電容器結構C2包含一導電上電極板6、一第一 點層11、一第三水平奈米點層11，、一第一垂直 12·、一絕緣層13、一第二垂直奈米點層14'、一 .Re v. B， 量子侷限 流及漏電 奈米點層 極板7之 二水平奈 垂直奈米 ]氬、氦、 高溫可爲 由將複數 相沉積之 電容器結 導體技術 的。 或變頻器 ，該電容 能或電源 之第二實 中第3圖 水平奈米 奈米點層 第四水平 -14- 201209863 奈米點層15'、一第二水平奈米點層15'以及一導電下電極 板7 〇 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第1圖之構件。第3圖與第1圖之差異在於： 第3圖之電容器結構C2另外還包含一位於該第一水平奈米 點層11與該第一垂直奈米點層IV之間之第三水平奈米點 層1M，以及一位於該第二垂直奈米點層與該第二水平 奈米點層之第四水平奈米點層1Y，其中該第一及第二水 平奈米點層11、15之長度係大於該第三及第四水平奈米點 層11'、15'，並且該第一及第二垂直奈米點層12'、14' 之長度係相同於該第三及第四水平奈米點層1^、15'之長 度。藉由上述配置，短軸奈米點層（亦即’第3圖之該第三 及第四水平奈米點層H'、15')所發出之磁場將被長軸奈米 點層（亦即，第3圖之該第一及第二水平奈米點層11、15) 所限制住，用以保持水平奈米點層之磁場（如第4圖中所 示）’進而提升所製造出之電容器結構的絕緣性。 接著參照第5圖’其爲本發明之第三實施例°在本實 施例中，電容器結構C3由上至下依序包含一第—水平奈米 點層n、一第三水平奈米點層II1、一第一垂直奈米點層 12_、一導電上電極板0,、一絕緣層13'、一導電下電極板 7，、一第二垂直奈米點層14’、一第四水平奈米點層15'以 及一第二水平奈米點層15。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第3圖之構件’惟第5圖與第3圖之差異在 -15- 201209863 於：第5圖之導電上電極板6’與導電下電極板7’係分別 鄰接該絕緣層13’之上下兩端而非分別配置於該第一水平 奈米點層11上與該第二水平奈米點層15下。因此，藉由 該等長軸奈米點層11、15與短軸奈米點層11’ 、15’之間 的磁場效應，以及該等垂直奈米點層12’與14’所產生之 週期性磁場，可製成高介電常數以及具有降低漏電功效之 電容器結構。 參照第6圖，其爲本發明之第四實施例。在本實施例 中，電容器結構C4由上至下依序包含一導電上電極板6、 —第一垂直奈米點層12、一絕緣層13、一第二垂直奈米點 層14以及一導電下電極板7。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第1圖之構件，惟第6圖與第1圖之差異在 於：在該導電上電極板6與該絕緣層13之間僅配置第一垂 直奈米層層12，以及在該絕緣層13與該導電下電極板7 之間僅配置第二垂直奈米點層14。藉由前述第一與第二垂 直奈米點層以及導電上及下電極板之間的磁場作用，可製 成具有高介電常數之電容器結構C4。 參照第7圖，其爲本發明之第五實施例》在本實施例 中，電容器結構C5由上至下依序包含：一第一垂直奈米點 靥12、一導電上電極板6’ 、一絕緣層13 —導電下電極板 7'、以及一第二垂直奈米點層14。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第6圖之構件，惟第7圖與第6圖之差異在 [S] -16 - 201209863 於：該導電上電極板6’與該導電下電極板7’係分別配置 於該絕緣層13之上下兩端，而非分別配置於該第一垂直奈 米點層12上以及該第二垂直奈米點層14下。藉由前述第 一與第二垂直奈米點層12、14以及該導電上及下電極板 6’ 、7’之間的磁場作用，可製成具有高介電常數之電容 器結構C5。 參照第8圖，其爲本發明之第六實施例。在本實施例 中，電容器結構C6由上至下依序包含：一導電上電極板6、 —第一水平奈米點層11、一絕緣層13、· 一第二水平奈米點 層15以及一導電下電極板7。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第6圖之構件’惟第8圖與第6圖之差異在 於：在該導電上電極板6與該絕緣層13之間僅配置第一水 平奈米層層11，以及在該絕緣層13與該導電下電極板7 之間僅配置第二水平奈米點層15。藉由前述該第一與第二 水平奈米點層Η、15以及該導電上電極板6與該導電下電 極板7之間的磁場作用，可製成具有高絕緣性之電容器結 構C6。 參照第9圖，其爲本發明之第七實施例。在本實施例 中，電容器結構C7由上至下依序包含：一第一水平奈米點 層11、一導電上電極板6’ 、一絕緣層13，、一導電下電 極板7^以及一第二水平奈米點層15。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第8圖之構件’惟第9圖與第8圖之差異在 [S ] -17- 201209863 於：該導電上電極板6’與該導電下電極板7’係分別配置 於該絕緣層13’之上下兩端，而非分別配置於該第一水平 奈米點層11上以及該第二水平奈米點層15下。藉由前述 第一水平奈米點層丨丨與該第二水平奈米點層15以及該導 電上電極板6’與該導電下電極板7’之間的磁場作用’可 製成具有高絕緣性之電容器結構C7。 參照第10圖，其爲本發明之第八實施例β在本實施例 • 中，電容器結構C8由上至下依序包含：一導電上電極板6、 # —第一水平奈米點層11、一第三水平奈米點層11'、一絕 緣層13、一第四水平奈米點層15<、一第二水平奈米點層 15以及一導電下電極板7。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第3圖之構件，惟第10圖與第3圖之差異在 於：在該導電上電極板6與該絕緣層13之間僅配置第一水 平奈米點層11與第三水平奈米點層11’ ’以及在該絕緣層 13與該導電下電極板7.之間僅配置第二水平奈米點層15 ® 與第四水平奈米點層15’ 。藉由前述該第一至第四水平奈 米點層11、11’ 、15、15’以及該導電上電極板6與該導 電下電極板7之間的磁場作用’可製成具有高絕緣性之電 容器結構C 8。 請參照第Π圖，其爲本發明之第九實施例。在本實施 例中，電容器結構C9由上至下依序包含：一第一水平奈米 點層11、一第三水平奈米點層11'、一導電上電極板6’ 、 —絕緣層13'、一導電下電極板7'、一第四水平奈米點層 [S] -18- 201209863 1 5 '以及一第二水平奈米點層1 5。 本實施例之電容器結構中之元件、形成方式與組成材 料相似於前述第10圖之構件，惟第11圖與第10圖之差異 在於：該導電上電極板6’與該導電下電極板7’係分別配 置於該絕緣層13’之上下兩端’而非分別配置於該第一水 平奈米點層11上以及該第二水平奈米點層15下。藉由前 述第一至第四水平奈米點層11、11’ 、15、15’以及該導 電上電極板6’與該導電下電極板7’之間的磁場作用’可 • 製成具有高絕緣性之電容器結構C7。 綜上所述，本發明電容器結構藉由該第—水平奈米點 與第二水平奈米點（或者第一水平奈米點至第四水平奈米 點）所形成之水平方向磁場，可使所製成之電容器結構具有 高絕緣性。此外，藉由該第一垂直奈米點層與該第二垂直 奈米點層中之奈米點所形成之垂直方向磁場，可使所製成 之電容器結構具有高介電常數，進而增加電容器之電容値。 雖然本發明參照較佳實施例而進行說明示範，惟應了 ® 解的是在不脫離本發明之精神及範疇內，對於本發明所屬 技術領域中具有通常知識者而言，仍得有許多變化及修 改。例如：電極板之水平磁化方向可爲由左至右之方向亦 可爲由右至左之方向；此外，奈米點層之垂直磁化方向可 爲由上至下之方向亦可爲由下至上之方向；再者’該等奈 米點之形狀除了橢圓形狀、球狀、橄欖狀及柱狀外’也可 爲板狀、長條狀或者其它適當形狀。此外，水平奈米點層 與垂直奈米點層之層數、配置位置以及長度可視實際應用 [S3 • 19 - 201209863 1?0彳乍_#調整。因此在不脫離本發明之原理及精神下，所 中具有通常知識者依據本發明申請專利範圍及 # B月說;Η月書內容所作之修飾與變化，皆應屬於本發明專利 所涵蓋之範圖。 【圖式簡單說明] 第1®爲本發明電容器結構之第一實施例之示意圖； 胃2 ®爲顯示本發明在水平磁化方向上產生週期性位 能Ve(x)之示意圖； 第3圖爲本發明電容器結構之第二實施例之示意圖； 第 4 圖 爲 顯 示 第 3 圖 之 長 軸 水 平 奈 米 點 層 磁 場 限 制 短 軸 水平 奈 米 點 層 磁 場 之 示 意 圖 0 第 5 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 三 實 施 例 之 示 意 圖 * 第 6 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 四 實 施 例 之 示 意 圖 :以 及 第 7 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 五 實 施 例 之 示 意 圖 。第 8 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 實 施 例 之 示 意 圖 〇 第 9 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 七 實 施 例 之 示 意 圖 〇 第 1 0 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 八 實 施 例 之 示 意 圖。 第 1 1 圖 爲 顯 示 本 發 明 電 容 器 結 構 之 第 九 實 施 例 之 示 意圖。 [S) -20- 201209863 【主要元件符號說明】Phys. Letts., 92, 062112, 2008), by means of vacuum or blunt gas (argon or nitrogen, etc.) annealing and lithography process to form ferromagnetic electrodes; 2. Simultaneous activation of evaporation, sputtering, chemical gas Insulating material after phase deposition (such as cerium oxide, tantalum nitride, etc.), embedding a plurality of nano-dots in the insulating material; performing vacuum or # in an elevated magnetization temperature (for example, 300 to 1 000 degrees) An inert gas annealing process to simultaneously apply a horizontal magnetic field to the ferromagnetic electrode or magnetic nano-point to form a first horizontal nano-point layer during the annealing process; c) repeating step b) at the first level Depositing a ferroelectric material and an insulating material (such as ceria, tantalum nitride, aluminum oxide, etc.) on the nanodot layer, except that the magnetization temperature is slightly lower than the magnetization temperature of step b) and the nano-dots are applied a vertical magnetic field to form a first vertical nano-dot layer: d) depositing an insulation on the first vertical nanospot layer [S3 -10- 201209863 by means of evaporation, sputtering or chemical vapor deposition Layer; e) repeating step c) to the first vertical nanometer point Forming a second vertical nano-dot layer on the layer; f) repeating step b) to form a second horizontal nano-dot layer on the second vertical nano-dot layer; and g) repeating step a) to A second electrode layer is formed on the second horizontal nano dot layer. The manufacturing method as described above, further comprising the step bl): after performing the step b), repeating the step b) to form a length on the first horizontal nano-dot layer that is smaller than the first horizontal nano-dot layer a three-level nano-point; and a step f-Ι): before performing step f), repeating step b) to form a length equal to the third horizontal nano-layer on the second vertical nano-dot layer Four horizontal nano point layers. [Embodiment] The technical features of the present invention will be further described in conjunction with the embodiments, which are merely preferred examples, and are not intended to limit the scope of the present invention. The above directional terms, such as upper, lower, horizontal, and vertical, are used for convenience of description and are not intended to limit the scope of the invention. Referring to Figure 1, Figure 1 is a schematic view of a first embodiment of a capacitor structure of the present invention. The capacitor structure C1 sequentially includes a conductive upper electrode plate 6, a first horizontal nano-dot layer 11, a first vertical nano-dot layer 12, an insulating layer 13, and a second vertical nano-dot layer from top to bottom. 14. A second horizontal nano-dot layer 15 and a conductive lower electrode plate 7, wherein the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15 are in a horizontal magnetization direction 8 (ie, with E S1 -11 - 201209863 The upper and lower electrode plates 6, 7 are magnetized in parallel, and may be one of ptFe, CoFe, Co-Fe-Ni and alloys thereof. Further, the ferromagnetic material constituting the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15 may be, for example, a spherical, olive-shaped, columnar or tapered nano-dots, preferably an ellipse. The shape, the horizontal nano dot layer and having a size of several nanometers to several micrometers. Further, the ferromagnetic material in the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15 may be designed to be the same or different. In this embodiment, the insulating layer 13 is composed of a single layer or a plurality of dielectric materials of the same or different layers, wherein the dielectric material may be Al2〇3, Si〇2, SiNx, Ti〇2, BaTi〇3. One of its alloys. When the multilayer structure of the insulating layer 13 is a different dielectric substance, the multi-layer structure is referred to as a super-lattice. Further, the first and second horizontal nano-dot layers 11, 15 are plural The nano-points 131 are arranged in a horizontal manner, and the first and second vertical nano-dot layers 12, 14 are composed of a plurality of nano-points 121 arranged in a vertical manner, and the nano-dots 121 and 131 have The nanometer size and its shape® may be one of spherical 'olives, columns, and cones, preferably elliptical' strips or columns, but are not limited thereto. The nano-dots 121, 131 are composed of a ferromagnetic material in which the nano-dots 121 are magnetized in a perpendicular magnetization direction 9 and the nano-dots 1 31 are magnetized in a horizontal magnetization direction 8. The nano-dots 121, 131 may be composed of one of PtFe, CoFe, Co-Fe-Ni and alloys thereof or other ferromagnetic materials. It should be noted that in order to make the nano-dots layer adjacent to the electrode plate more magnetic fields perpendicular to each other, the present invention can utilize the long-axis direction of the nano-dots to apply the direction of the magnetic [S] -12 - 201209863 field. For example, 'As shown in Fig. 1 'When the nano-dots are arranged such that their long axes are arranged in the horizontal axis direction, the nano-dot layer formed will become a horizontal nano-layer that allows the magnetic field to be more concentrated. 11,15. Similarly, when the nano-dots are arranged such that their long axes are arranged in the longitudinal direction, the nano-dot layer formed becomes a vertical nano-dot layer 12, 14 which concentrates the magnetic field. It should be emphasized here that the horizontal magnetic field/vertical magnetic field direction applied is parallel/perpendicular to the long axis direction of the nanometer point in order to concentrate the horizontal magnetic field/vertical magnetic field energy on the applied nano-dot layer. 'The implementation direction of the horizontal magnetic field/vertical magnetic field of Φ of the present invention is not limited thereto, and the first horizontal nano-dot layer η and the second horizontal nano-dot layer 15 and the first vertical nano-layer are formed. The nano-points 1 2 1 and 1 3 1 of the point layer 12 and the second vertical nano-dot layer 14 are citrus ferromagnetic materials 'but may be designed differently. Therefore, the capacitor structure C1 having high insulation and high dielectric constant can be produced by the mutually perpendicular magnetic fields formed by the nano-dots 121 and 131. This is because the horizontal nano-layers Π, each of the nano-spots 131 of 15 will generate a strong magnetic field between the nano-points 121 that are closest to the vertical nano-dot layers 12, 14 and due to The magnetic field between the two pairs of nano-dots 12, 131 is small, so a periodic magnetic field can be generated along the horizontal magnetization direction 8 (as in the X direction in Fig. 2). According to the calculation of quantum mechanics, a periodic potential energy Ve(x) is generated (as shown in Fig. 2). If the upper electrode is negative and the lower electrode is positive, the resulting dipole can have a huge The storage capacity, and the positive charge is at the top of each cycle and the negative charge is at the bottom. In addition, it is noted that due to the magnetic field of the horizontal magnetization direction 8, [S1 -13-201209863 due to the quantization effect and the literature P. Denk, et al, Phys V57, N20, 12094-1 3098, 1 998 theory And a quantum current and effect (Quantum confinement effect) can reduce the tunneling current, so that the horizontal magnetic field formed by the first horizontal nano-dot layer 11 and the second level 15 can be electrically connected to the upper electrode plate 6 High insulation is produced between. Preferably, the nano-dots 121 and 131 constituting the first horizontal nano-dot layer 11, the second-meter nano-layer 15, the first vertical nano-dot layer 12 and the second φ-dot layer 14 are The vacuum or the blunt gas of Example 丨氖 is formed by high temperature annealing, wherein the temperature is 300 to 1000 ° C or higher. Preferably, the nano-dots layer can be embedded in the insulating material by nano-dots, and formed in a high-temperature annealing process by evaporation, sputtering, or chemical gas. Since the respective members of the structure C1 of the present invention can be formed by sputtering, deposition, etching, etc., it is convenient to achieve micro-integration. In addition, the capacitor structure 1 can be connected to components such as switches, fuses, and the like. Protection and voltage regulator components for these components. The further device structure C1 can also be connected to an electronic device as an energy storage element for storing electricity. Referring to Figure 3, a third diagram is a schematic view of a capacitor structure embodiment of the present invention. 3 is similar to the structure of FIG. 1 , and the capacitor structure C2 includes a conductive upper electrode plate 6 , a first dot layer 11 , a third horizontal nano dot layer 11 , and a first vertical 12·1 Insulation layer 13, a second vertical nano-dot layer 14', a.Re v. B, quantum confinement current and leakage nano-layer layer plate 7 two horizontal nanometer vertical nano] argon, helium, high temperature can be Capacitor junction conductor technology for depositing complex phases. Or the inverter, the second or the second of the capacitor energy or power supply. The third level of the horizontal nanometer layer is the fourth level-14-201209863 nano point layer 15', a second level nano point layer 15' and one Conductive Lower Electrode Plate 7 The components, forming means and constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. The difference between FIG. 3 and FIG. 1 is that: the capacitor structure C2 of FIG. 3 additionally includes a third horizontal nanometer between the first horizontal nano-dot layer 11 and the first vertical nano-dot layer IV. a layer 1M, and a fourth horizontal nano-layer 1Y located in the second vertical nano-dot layer and the second horizontal nano-dot layer, wherein the first and second horizontal nano-dot layers 11, 15 The length is greater than the third and fourth horizontal nano-dot layers 11', 15', and the first and second vertical nano-dot layers 12', 14' are the same length as the third and fourth horizontal The length of the rice layer 1^, 15'. With the above configuration, the magnetic field emitted by the short-axis nano-dot layer (ie, the third and fourth horizontal nano-layers H', 15' of FIG. 3) will be layered by the long-axis nano-layer (also That is, the first and second horizontal nano-dot layers 11, 15) of FIG. 3 are confined to maintain the magnetic field of the horizontal nano-dot layer (as shown in FIG. 4) and are further improved. The insulation of the capacitor structure. Referring to FIG. 5, which is a third embodiment of the present invention, in the present embodiment, the capacitor structure C3 includes a first horizontal nano-dot layer n and a third horizontal nano-dot layer sequentially from top to bottom. II1, a first vertical nano-dot layer 12_, a conductive upper electrode plate 0, an insulating layer 13', a conductive lower electrode plate 7, a second vertical nano-dot layer 14', a fourth level The rice point layer 15' and a second horizontal nano point layer 15. The components, the forming manner and the constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 3, but the difference between FIG. 5 and FIG. 3 is -15-201209863 in: the conductive upper electrode plate 6 of FIG. 'The conductive lower electrode plate 7' is adjacent to the upper and lower ends of the insulating layer 13', respectively, and is disposed not on the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15, respectively. Therefore, the magnetic field effect between the long-axis nano-dot layers 11, 15 and the short-axis nano-dot layers 11', 15', and the period generated by the vertical nano-dot layers 12' and 14' The magnetic field can be made into a high dielectric constant and a capacitor structure with reduced leakage. Referring to Figure 6, it is a fourth embodiment of the present invention. In this embodiment, the capacitor structure C4 sequentially includes a conductive upper electrode plate 6, a first vertical nano-dot layer 12, an insulating layer 13, a second vertical nano-dot layer 14, and a conductive layer from top to bottom. Lower electrode plate 7. The components, the forming manner and the constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 1, but the difference between FIG. 6 and FIG. 1 lies in that between the conductive upper electrode plate 6 and the insulating layer 13. Only the first vertical nanolayer 12 is disposed, and only the second vertical nano-layer 14 is disposed between the insulating layer 13 and the conductive lower electrode plate 7. The capacitor structure C4 having a high dielectric constant can be formed by the magnetic fields between the first and second vertical nano dot layers and the conductive upper and lower electrode plates. Referring to FIG. 7, which is a fifth embodiment of the present invention, in the present embodiment, the capacitor structure C5 is sequentially included from top to bottom: a first vertical nano-node 12, a conductive upper electrode plate 6', An insulating layer 13 - a conductive lower electrode plate 7', and a second vertical nano dot layer 14. The components, forming manners and constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 6, but the difference between FIG. 7 and FIG. 6 is in [S] -16 - 201209863 on: the conductive upper electrode plate 6 'The conductive lower electrode plate 7' is disposed on the upper and lower ends of the insulating layer 13, respectively, instead of being disposed on the first vertical nano-dot layer 12 and the second vertical nano-dot layer 14, respectively. The capacitor structure C5 having a high dielectric constant can be formed by the magnetic fields between the first and second vertical nano-dots layers 12, 14 and the conductive upper and lower electrode plates 6', 7'. Referring to Figure 8, it is a sixth embodiment of the present invention. In this embodiment, the capacitor structure C6 is sequentially included from top to bottom: a conductive upper electrode plate 6, a first horizontal nano-dot layer 11, an insulating layer 13, a second horizontal nano-dot layer 15, and A conductive lower electrode plate 7. The components, forming manners and constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 6 'only the difference between FIG. 8 and FIG. 6 is that between the conductive upper electrode plate 6 and the insulating layer 13 Only the first horizontal nanolayer 11 is disposed, and only the second horizontal nano-layer 15 is disposed between the insulating layer 13 and the conductive lower electrode plate 7. The capacitor structure C6 having high insulation properties can be formed by the magnetic fields between the first and second horizontal nano-layer layers 15 and 15 and the conductive upper electrode plate 6 and the conductive lower electrode plate 7 as described above. Referring to Figure 9, it is a seventh embodiment of the present invention. In this embodiment, the capacitor structure C7 is sequentially included from top to bottom: a first horizontal nano-dot layer 11, a conductive upper electrode plate 6', an insulating layer 13, a conductive lower electrode plate 7 and a The second level of nano-dot layer 15. The components, forming manners and constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 8 except that the difference between FIG. 9 and FIG. 8 is in [S] -17-201209863 on: the conductive upper electrode plate 6 'The conductive lower electrode plate 7' is disposed on the upper and lower ends of the insulating layer 13', respectively, instead of being disposed on the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15, respectively. The high-insulation can be made by the magnetic field between the first horizontal nano-layer layer and the second horizontal nano-layer 15 and the conductive upper electrode plate 6' and the conductive lower electrode plate 7'. Capacitor structure C7. Referring to Fig. 10, which is an eighth embodiment of the present invention, in the present embodiment, the capacitor structure C8 is sequentially included from top to bottom: a conductive upper electrode plate 6, # - a first horizontal nano dot layer 11 a third horizontal nano-dot layer 11', an insulating layer 13, a fourth horizontal nano-dot layer 15 <, a second horizontal nano-dot layer 15 and a conductive lower electrode plate 7. The components, the forming manner and the constituent materials in the capacitor structure of this embodiment are similar to those of the foregoing FIG. 3, except that the difference between FIG. 10 and FIG. 3 is that between the conductive upper electrode plate 6 and the insulating layer 13 Only the first horizontal nano-dot layer 11 and the third horizontal nano-dot layer 11 ′′ are disposed, and only the second horizontal nano-dot layer 15 ® is disposed between the insulating layer 13 and the conductive lower electrode plate 7 . Four horizontal nano point layer 15'. The first to fourth horizontal nano-dot layers 11, 11', 15, 15' and the magnetic field between the conductive upper electrode plate 6 and the conductive lower electrode plate 7 can be made highly insulating. Capacitor structure C8. Please refer to the figure, which is a ninth embodiment of the present invention. In this embodiment, the capacitor structure C9 is sequentially included from top to bottom: a first horizontal nano-dot layer 11, a third horizontal nano-dot layer 11', a conductive upper electrode plate 6', and an insulating layer 13. ', a conductive lower electrode plate 7', a fourth horizontal nano dot layer [S] -18 - 201209863 1 5 ' and a second horizontal nano dot layer 15 . The components, the forming manner and the constituent materials in the capacitor structure of this embodiment are similar to those of the above-mentioned FIG. 10, except that the difference between FIG. 11 and FIG. 10 is that the conductive upper electrode plate 6' and the conductive lower electrode plate 7 are different. 'The system is disposed at the lower ends of the insulating layer 13', respectively, instead of being disposed on the first horizontal nano-dot layer 11 and the second horizontal nano-dot layer 15, respectively. By the aforementioned first to fourth horizontal nano-point layers 11, 11', 15, 15' and the magnetic field between the conductive upper electrode plate 6' and the conductive lower electrode plate 7' can be made high Insulating capacitor structure C7. In summary, the capacitor structure of the present invention can be formed by the horizontal magnetic field formed by the first horizontal nanometer point and the second horizontal nanometer point (or the first horizontal nanometer point to the fourth horizontal nanometer point). The resulting capacitor structure has high insulation. In addition, by forming a vertical magnetic field formed by the first vertical nano-dot layer and the nano-dots in the second vertical nano-dot layer, the fabricated capacitor structure can have a high dielectric constant, thereby increasing the capacitor. The capacitance is 値. While the invention has been described with respect to the preferred embodiments, the invention is intended to be construed as a <Desc/Clms Page number> And modify. For example, the horizontal magnetization direction of the electrode plate may be from left to right or from right to left; in addition, the perpendicular magnetization direction of the nano dot layer may be from top to bottom or from bottom to top. The direction of the nano-points may be plate-shaped, elongated, or other suitable shape except for the elliptical shape, the spherical shape, the olive shape, and the column shape. In addition, the number of layers, arrangement position and length of the horizontal nano-dot layer and the vertical nano-dot layer can be adjusted according to the actual application [S3 • 19 - 201209863 1?0彳乍_#. Therefore, without departing from the spirit and spirit of the invention, those skilled in the art will be able to claim the scope of the invention in accordance with the scope of the invention, and the modifications and variations of the contents of the month of the present invention shall fall within the scope of the invention. Figure. BRIEF DESCRIPTION OF THE DRAWINGS A first schematic diagram of a first embodiment of a capacitor structure of the present invention; a stomach 2 ® is a schematic view showing a periodic potential energy Ve(x) in the horizontal magnetization direction of the present invention; A schematic view of a second embodiment of the capacitor structure of the present invention; FIG. 4 is a schematic view showing a long-axis horizontal nano-spot magnetic field limitation short-axis horizontal nano-spot magnetic field of FIG. 3; FIG. 5 is a view showing the capacitor structure of the present invention. BRIEF DESCRIPTION OF THE THIRD EMBODIMENT * Fig. 6 is a view showing a fourth embodiment of the capacitor structure of the present invention: and Fig. 7 is a view showing a fifth embodiment of the capacitor structure of the present invention. 8 is a schematic view showing a first embodiment of a capacitor structure of the present invention. FIG. 9 is a schematic view showing a seventh embodiment of a capacitor structure of the present invention. FIG. 10 is a schematic view showing an eighth embodiment of the capacitor structure of the present invention. . Fig. 1 1 is a schematic view showing the ninth embodiment of the structure of the capacitor of the present invention. [S) -20- 201209863 [Main component symbol description]
C1-C9 電 容 器 結 構 6、6 ， 上 電 極 板 7、7 » 下 電 極 板 8 .水 平 磁 化 方 向 9 垂 直 磁 化 方 向 11 第 一 水 平 奈 米 點 層 11， 第 二 水 平 奈 米 點 層 12、 12， 第 一 垂 直 奈 米 點 層 121 、131 奈 米 點 13、 13， 絕 緣 層 14、 14， 第 二 垂 直 奈 米 點 層 15 第 二 水 平 奈 米 點 層 15, 第 四 水 平 奈 米 點 層 -21 -C1-C9 capacitor structure 6, 6 , upper electrode plate 7, 7 » lower electrode plate 8. horizontal magnetization direction 9 perpendicular magnetization direction 11 first horizontal nano-dot layer 11, second horizontal nano-dot layer 12, 12, A vertical nano-dot layer 121, 131 nano-point 13, 13, an insulating layer 14, 14, a second vertical nano-dot layer 15, a second horizontal nano-dot layer 15, a fourth horizontal nano-dot layer - 21