201208158 六、發明說明： 【發明所屬之k術領域】 本發明係關於一種壓電換能裴置，尤其是，一種具全 波整流功能之複合壓電換能裝置。 【先前技術】 壓電效應是電場與力學相互結合作用的—種現象，單 位晶胞内，如果正電荷與負電荷的幾何中心點不在同一點 上時，也就是晶體結構中不存在著對稱中心，就會產生電 偶極(electric dipole);當受到應力作用時，便會使正負電荷 產生相對位移，因而產生電偶極矩或電壓，故壓電效應係 由於晶體物質中之皁位晶胞内缺乏對稱中心而導致。 壓電效應包含了正壓電效應及逆壓電效應，正壓電效 應係當一機械應力施加於一壓電材料時，該壓電材料之兩 端會伴隨產生一個與該機械應力大小成比例的電荷，當應 力方向相反時，電荷的極性，亦會隨之而反轉；逆壓電效 應則是外加電場於壓電材料上，使材料產生機械形變，或 是使材料内部阻抗產生變化。自壓電材料被發現以來，已 被廣泛應用於換能器 '感測器、微致動器、通訊元件等各 種應用領域之中。 鍅鈦酸鉛（PZT)及氧化鋅（ZnO)是目前最常被使 用之壓電材料，請閱第la、lb及lc圖所示，一壓電元件 91係屬於非傳導性材料，其内部沒有自由電子來幫助傳 導’但只要施加一應力（例如：一張應力92或·^壓縮應力 93)於該壓電元件91上，該應力造成内部晶體形變後，將 201208158 導致電子94移動輸出電壓。因此，當該壓電材料受到振201208158 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a piezoelectric transducer, and more particularly to a composite piezoelectric transducer having a full-wave rectification function. [Prior Art] The piezoelectric effect is a phenomenon in which electric field and mechanics interact with each other. In the unit cell, if the geometric center point of the positive charge and the negative charge are not at the same point, that is, there is no center of symmetry in the crystal structure. , an electric dipole is generated; when subjected to stress, the positive and negative charges are relatively displaced, thereby generating an electric dipole moment or voltage, so the piezoelectric effect is due to the soap cell in the crystalline substance. Lack of a symmetry center. The piezoelectric effect includes a positive piezoelectric effect and an inverse piezoelectric effect. When a mechanical stress is applied to a piezoelectric material, both ends of the piezoelectric material are accompanied by a magnitude proportional to the mechanical stress. The charge, when the stress direction is opposite, the polarity of the charge will also be reversed; the inverse piezoelectric effect is the applied electric field on the piezoelectric material, causing the material to mechanically deform or change the internal impedance of the material. Since the discovery of piezoelectric materials, it has been widely used in various applications such as transducers, sensors, microactuators, and communication components. Lead bismuth titanate (PZT) and zinc oxide (ZnO) are the most commonly used piezoelectric materials. As shown in the figures la, lb and lc, a piezoelectric element 91 is a non-conductive material and its interior There is no free electron to help conduct 'but as long as a stress (for example: a stress 92 or a compressive stress 93) is applied to the piezoelectric element 91, the stress causes the internal crystal to deform, and 201208158 causes the electron 94 to move the output voltage. . Therefore, when the piezoelectric material is subjected to vibration
It::，由於施加在該壓電材料上的交變應力(:張應力 ，、該堡縮應力反覆地交替)㈣，則產生交流電，如第 所不。惟，—般電子元件之供電需求均以直流電居多 當上述之㈣材料受力振動以供電給—電子元件時 外接一整流電路’將輸出之交流電轉為直流電 ^ 分為半波紐縣終流，半波㈣會將貞㈣截^ =It::, due to the alternating stress (: tensile stress, which is repeated alternately) (4) applied to the piezoelectric material, alternating current is generated, as in the first. However, the power supply requirements of the general electronic components are mostly DC power. When the above (4) materials are vibrated to supply power to the electronic components, an external rectifier circuit is used to convert the output AC power into DC power, which is divided into half-wave counties. Half wave (four) will cut 贞 (four) ^
Hi為利用二極體組成;全波整流則將負半週轉為： r二 兩種:第一種利用中心抽頭式的變㈣ 和？ 一極體構成一個整流電路，第二 :其電路構造與電橋相似，特稱為橋式整流電= 係—f關電換能裝置之橋式整流電路 橋式整流之電麵關％職電換能錢發電後進行 整产=以Γί橋式整流為例，若鄉二極體構成的橋式 登抓電路，來進行該習用壓 使該習用壓電耐之輸出整流’則會 四個約M伏特⑽)的電壓，且 式:;=二亦會造成乾能;若以鍺二極體構成的橋 式整机電路，則會損失約05 = 二極體的内阻也會造成耗H _的_ ’同時四個 ⑽川二極體進行整流，則會向切入電壓較小的 會造成耗能，並朋_二極體簡，其内阻也 價成本較高。 於特殊二極體’所以單 因此，若能使該習用壓電換 接輸出直流電，即可去除該】= 置具有整流功能而直 楚冰電路所造成之功率損耗， 201208158 並減少該整流電路之體積及成本。 【發明内容】 本發明之目的乃改良上述缺點，以提供一種複 換能裝置，該複合壓電換能裝㈣可_振絲產生2 流電，並_壓電材料與金屬㈣接觸時，所產 : ，壁全波整流成-直流電。，因此，無外接整流電路之功= 損耗，可提升壓電換能效率。 年 本發明之次-目的’係提供一種複合壓電換 該複合壓賴能裝㈣可·振動而敍該交流電裝 用壓電材難金歸__，職生的電全 流成-直流電。因此，無外接整流電路所需之成太= 低建置壓賴能純之成本。 〶之成本’可降 本發明之再-目的，係提供一種複 該複合壓電換能裝置係可利用振動而產生二=丨 用壓電材料與金屬材料接觸時 3^電並利 流成-直流電。因此，無外接 位障壁全波整 少使用空間及增加單位體積之裝置1 ^之體積’可減 本發明之複合壓電換能^，4 有撓性且設有二相對表面；_ 、 土板，係具 壓電層央麟-第-導電層及_電單元，設有一第一 電層與該第-壓電層之間的接:導電層間，該第一導 層與該第-壓電層之間的接簫::接觸’該第二導電 單元’設有一第二壓電層失設:蕭=接觸;-第二壓電 電層間，該第三導電層一Μ 。導電層及該第四導 Ά第〜壓電層之間的接面為歐姆 201208158 接觸’該第四導電層與該第二壓電層之間的接面為蕭特基 接觸，其中，該基板之該二相對表面分別結合於該第^壓 電單70之第一導電層及第二壓電單元之第三導電層，或者 該二相對表面分別結合於該第一壓電單元之第二導電層及 第一壓電單元之第四導電層。藉此產生已經全波整流之電 力。 【實施方式】 為讓本發明之上述及其他目的、特徵及優點能更明顯 易懂，下文特舉本發明之較佳實施例，並配合所附圖式， 作詳細說明如下： 本發明以下所述之「歐姆接觸（Ohmic Contact)」係 一金屬半導體接面，其雙向皆可導通，且其接觸電阻值遠 小於一半導體之串聯電阻值，當電流通過時，其壓降可忽 略因此，該金屬半導體接面係不具整流功能，係熟悉該 技藝者可以理解。 ^本發明以下所述之「蕭特基接觸（SchottkyContact)」 4系金屬半導體接面，當構成此金屬半導體接面之金屬及 半導體接晴’解導體之電子親和力與該金屬之功函數 將形成一蕭特基位障（Sch〇ttky Barrier)，該蕭特基位障減 掉一費米能階（Fermi Level )及該半導體傳導帶 (Conduction Band)之電位差，可得一内建電位障，該内 建電位障即是辭導體料帶中之電子試_動進入該金 屬時所看到之位障。於順向偏壓情形下，由該金屬至該半 導體之位障不變，但是由該半導體至該金屬的位障減少； 201208158 反之，於逆向偏壓情形下，由該金屬至該半導體之位障不 .變，但是由該半導體至該金屬的位障增加，因此，.該金屬 半導體接面係具有整流功能，係熟悉該技藝者可以理解。 請夺照第5圖所不’其係本發明複合壓電換能裝置之 第一實施例，該複合壓電換能裝置係包含一基板丨、— -壓電單元2及-第二壓電單元3，該基板丨係夾設於該 第-壓電單元2及該第二壓電單幻間。因此，該複合壓 電換能裝置可經振動而產生-交流電力，並藉由該第—壓 電單兀2及該第二壓電單元3將該交流電力全波整流成一 直流電力。 該基板1較佳係由塑膠等具有撓性之材料所製成，該 基板1设有-第-結合面u、—第二結合面12及數個電 性連接件13。該第-結合面u及該第二結合面12係為二 相對表面，錄顺該第—壓電單元2㈣第二壓電單元 3相結合；該數個電性連接件13係由導電材料構成，較佳 係為導電性佳之金屬’該數個電性連接件13係連通該第一 結合面11及第二結合面12 ’藉此電性連接該第一壓電單 元2及該第二壓電單元3。 該第Μ電單元？係具有一第一壓電層、一第一 電層22及-第二導電層23。該第—壓電層U較佳係由 鈦酸錯或氧⑽等，崎_觀、絲濺鑛法、 膠凝膠法、熱料、網印法、化學_崎法、電子束 鐘法、雷射沉積法或原子層沉積法等方柄製成，該第 座電層21係設有一第一表面211及-第二表面212，該 一表面叫及該第二表面212係為二相對表面；該第一 201208158 佳係由具有導電性之金屬材料所製成，該第-導 11曰及μ二相對表面係分別結合於該基板1之第一接合面. 層21之第一表面211，且該第-導電層 ⑽電層21㈤為歐姆接觸；該第二導電層23較 頻舰法、ϋ、銀及銅等金屬材料的其中至少一種，以射 積法^電子鍛法、熱蒸鐘法、網印法、化學氣相沉 法等方式所製雷=冗積法、原子層沉積法或塗佈 以第^ 該第一壓電層 以間為蕭特基接觸。第—導電層23與該第一壓電層 電廣5第及1電1元3係具有一第二壓電層31、-第三導 敛酸導電層33。該第二壓電層31較佳係由錯 =法 =材:印:射_法、直流•溶 ，雷射;積:或 二表面祀及該第四表面312係為 = 電層32較佳係由具有導電 表面， 電層32之二相對表面係分別結合於該基板?之成第該= 12及該第二壓電層31之第三瑕1之第-接合面 32與該第二壓電層31間 ’且該第三導電層 佳係由金n及較 頻蘭法、直流猶法、熱蒸縣、網印/化學氣: 3方第雷射沉積法、原子層沉積:或塗: 法等方式所製成，料四導電層33係結合於該第二㈣Ζ 201208158 33; 面312 ’且該第四導電層33與該第二壓電層 31間為蕭特基接觸。 壓電單二該f 一壓電早凡2之第一導電層22及該第二 ^单兀3之第三導電層32間係電性連接；該第—壓電單 二：第二導電層23及該第二壓電單元3之第四導電層 一日系電性連接。因此’該第一壓電單元2及該第二麼電 Π3之各具有相同金屬半導體接面（即歐姆接觸或蕭特 :接觸）之導電層間係各自電性連接。其中，該第一導電 =2及第三導電層32之間係可經由該基板丨之數個電性 ^接件13達成電性連接；亦可選擇轉電材，成該基板 ’並省略該電性連接们3之設置而直接透過該基板[達 成電性連接；或者’亦可經由外接金料導電材料之 達成電性連接。 本發明之複合㈣換絲置的運作詳述如後：由於該 基板1具有撓性，當該基板i之一端受力而振動（例如： 反覆擺動）時，可使設置於該基板1上之各材料層亦隨盆 .振動而變形。請_6a騎示，錢、本個之複合壓電換 能裝置向上麵發電之示㈣。t該基板丨向上擺動時， 該第-壓電層21之第-表面211及第二表面212分別受一 張應力及一_應力作用，因而在該第-表面211聚集負 電荷，並在該第二表面212聚集正電荷；同時，該第二屢 電層31之第三表面311及第四表面312分別受該屋縮應力 及該張應力作用，因而在該第三表面311聚集正電荷，並 在該第四表面312聚集負電荷。若將已電性連接且皆具有 歐姆接觸之第-導電層22及第三導電層32接地，由ς該 201208158 第一導電層22與該第二導電層23間為順向偏麗，由該半 導體至該金屬的位障減少，且該第三導電層Μ與該第四導 電層33間為逆向偏壓，由該半導體至該金屬的位障辦加， 因此’由阻抗並聯效應可得—減少之位障，故已電性曰連接 且皆具有蕭特基接觸之第二導電層23及第四導電層”可 輪出一正電壓。 曰 反之’請閱第6b圖所示’其係本發明之複合壓電換 能裝置向下擺動發電之示意圖。當該基 則在第:壓電層21之第-表面211及第二表面=3聚 集正電何及負電荷；該第二壓電層31之第三表面3ιι及第 四表面312分別聚集負電荷及正電荷。若將已電性連接且 皆具有歐姆接觸之第-導電層22及第三導電 由於該第-導電層22與該第二導電層23間料向=， 由該半導體至該金屬的轉增加，且該第三導電層％與該 =四導電層33間為順向偏壓，由該半導體至該金屬的位障 減少，因此’由阻抗並聯效應可得一減少之位障，故已電 性連接且皆具錢特基接觸之第二導2 導 層33可輸出一正電壓。 及弟四導電 综上職，制第7圖卿，騎實施狀複合魏 換能農置受力振動發電後自整流之電壓波形圖。因此 ，明所揭示之複合壓電換能裝置不需透過任何整流電路， 2於該複合壓絲置受力振動時，直紐 波整流之電力。 巧王 請閱第8圖所示，其係本發明之第二實施例，— 實施例與該第-實施例差異在於，該第―遷電單元^係: —11 — 201208158 該第二導電層23結合於該基板1之第一結合面u，且該 第二壓電單元3係以該第四導電層33結合於該基板1之第 二結合面12。其+，若將已電性連接且皆具有歐姆接觸之 第一導電層22及第三導電層32接地，當寧基板丨向上擺 動時，該第一導電層22與該第二導電層23間為逆向偏壓 ’且該第三導電層32與該第四導電層33間為順向偏壓， 已電性連接且皆具有蕭特基接觸之第二導電層23及第四. 導電層33可輸出—正電壓；反之，#該基板丨向下擺動時 ’該第一導電層22與該第二導電層23間為順向偏壓，且 _ 該第三導電層32與該第四導電層33間為逆向偏壓，已電 性連接且皆具有蕭特基接觸之第二導電層23及第四導電 層33可輸出一正電壓。 因此，由本發明之第一實施例中得知，該第一壓電單 元2及該第二壓電單元3皆以具有歐姆接觸之導電層（即 該第-導電層22及該第三導電層32)分別結合於該基板丨 ^二，對表面，·且由本發明之第二實施例中得知，該第一 昼電单元2及該第二壓電單元3皆以具有蕭特基接觸之導籲 電層（即該第二導電層23及該第四導電層33)分別結合 於該基板1之二相對表面。換言之，該第一壓電單元2及 該第二壓電單元3結合於該基板！之二相對表面的導電層 ’係具有相同金屬半導體接面（即歐姆接觸或蕭特基接^ )° 本發明之複合壓電換能裝置，係可利用振動而產生該 交流電，並壓電材料與金屬材料接觸時，所產生的電. 位P早壁全波整流成-直流電。因此’本發明無外接整流電 〜12 — 201208158 路之功率損耗，具有提升壓電換能效率之功效。 本發明之.複合壓電換能裝置，係可利用振動而產生該 交流電’並利用壓電材料與金屬材料接觸時，所產生的電 位障壁全波整流成一直流電。因此，本發明無外接整流電 路所需之成本，具有降低建置壓電換能系統成本之功效。 本發明之複合壓電換能裝置，係可利用振動而產生該 交流電，並利用壓電材料與金屬材料接觸時，所產生的電 位P早壁全波整流成一直流電❶因此，本發明無外接整流電 路所需之體積，具有減少使用空間及增加單位體積之裝置 數量之功效。 雖然本發明已利用上述較佳實施例揭示，然其並非用 以限定本發明，任何熟習此技藝者在不脫離本發明之精神 和範圍之内’轉上述實補進行各種絲與修改仍屬本 發明所保護之技術料，因此本剌之賴朗當視後附 之申請專利範圍所界定者為準。 【圖式簡單說明】 第la圖：龍壓電換能裝置未受力之示意圖。 第lb圖：習賴電難裝置受到張應力之示竞圖。 第1c圖：制壓電換能裝置受職縮應力之; f2圖：習用壓電換能裝置發電後之電壓波形圖？ 第3圖：習用壓電換能裝置之橋式整流電路圖。 弟4圖：習用壓電換能裝置發電後橋式整流之電驗形 圖。 —13 — 201208158 第5圖：本發明複合壓電換能裝置第一實施例之組合立 體圖。· . 第6a圖··本發明複合壓電換能裝置第一實施例向上擺 動發電之示意圖。. 第6b圖.本發明複合壓電換能裝置第一實施例向下擺 動發電之示意圖。 第7圖.本發明複合壓賴能裝置第一實施例發電後自 整流之電壓波形圖。 第8圖.本發明複合屢電換能裝置第二實施例之組合立 體圖。 【主要元件符號說明】 〔本發明〕 1 基板 12第二結合面 21第一壓電層 212第二表面 23第二導電層 31第二壓電層 312第四表面 33 第四導電層 11 第一結合面 13電性連接件 2 第一壓電單元 211第一表面 22 第一導電層 3 第二壓電單元 311第三表面 32 第三導電層 〔習知〕 201208158 91壓電元件 92張應力 93 壓縮應力. 94.電子Hi is composed of diodes; full-wave rectification converts negative half cycles into: r two kinds: the first one uses center-tap type change (four) and ? One pole constitutes a rectifier circuit, and second: its circuit structure is similar to that of a bridge. It is called bridge rectifier power = system-f switch power rectifier bridge rectifier circuit After the energy conversion and power generation, the whole production is carried out. For example, if the bridge-type rectification circuit is formed by the township diode, the conventional pressure is applied to make the conventional piezoelectric resistance output rectification' The voltage of M volt (10)), and the formula: ; = 2 will also cause dry energy; if the bridge type circuit composed of 锗 diodes will lose about 05 = the internal resistance of the diode will also cause the consumption of H _ _ 'At the same time four (10) Sichuan diode rectification, it will cause energy consumption to the smaller cut-in voltage, and the _ diode is simple, its internal resistance is also costly. Therefore, if the conventional piezoelectric switch can output DC power, it can remove the power loss caused by the rectification function and the ice circuit, 201208158 and reduce the rectifier circuit. Volume and cost. SUMMARY OF THE INVENTION The object of the present invention is to improve the above disadvantages, and to provide a complex energy conversion device, wherein the composite piezoelectric transducer (4) can generate two currents, and the piezoelectric material is in contact with the metal (four). Production: The wall is full-wave rectified into - DC. Therefore, without the work of the external rectifier circuit = loss, the piezoelectric transducing efficiency can be improved. The second-purpose object of the present invention provides a composite piezoelectric transformer. The composite pressure-reducing energy device (4) can vibrate and the alternating current piezoelectric material is difficult to be returned to the __, and the electrical power of the employee is turned into a direct current. Therefore, there is no need for an external rectifier circuit to achieve the cost of low build-down voltage. The cost of the invention can be reduced. The purpose of the present invention is to provide a composite piezoelectric transducer device which can generate vibration by using a piezoelectric material which is in contact with a metal material when the piezoelectric material is in contact with the metal material. DC power. Therefore, the composite piezoelectric transducer of the present invention can be reduced by the full-wave barrier without the omnidirectional barrier and the volume of the device can be reduced by the volume of the device. 4, the flexible and two opposing surfaces; _, the earth plate a piezoelectric layer, a central-first conductive layer and an electrical unit, and a connection between the first electrical layer and the first piezoelectric layer: between the conductive layers, the first conductive layer and the first piezoelectric The interface between the layers: the contact 'the second conductive unit' is provided with a second piezoelectric layer missing: Xiao = contact; - between the second piezoelectric layers, the third conductive layer is a stack. The junction between the conductive layer and the fourth conductive layer to the piezoelectric layer is ohm 201208158 contact 'the junction between the fourth conductive layer and the second piezoelectric layer is a Schottky contact, wherein the substrate The two opposite surfaces are respectively coupled to the first conductive layer of the piezoelectric sheet 70 and the third conductive layer of the second piezoelectric unit, or the opposite surfaces are respectively coupled to the second conductive portion of the first piezoelectric unit And a fourth conductive layer of the first piezoelectric unit. Thereby, the power that has been full-wave rectified is generated. The above and other objects, features and advantages of the present invention will become more < The "Ohmic Contact" is a metal-semiconductor junction, which can be turned in both directions, and its contact resistance value is much smaller than the series resistance of a semiconductor. When the current passes, the voltage drop is negligible. Metal-conductor junctions do not have a rectifying function and are familiar to those skilled in the art. The "Schottky Contact" 4 series metal semiconductor junction described below in the present invention, when the metal and semiconductor junctions constituting the metal semiconductor junction are subjected to electron affinity and the work function of the metal will be formed. A Schottky Barrier, the Schottky barrier reduces the potential difference between a Fermi Level and the Conduction Band, and a built-in potential barrier is obtained. The built-in potential barrier is the barrier that is seen when the electronic test in the conductor strip is entered into the metal. In the case of forward bias, the barrier from the metal to the semiconductor is unchanged, but the barrier from the semiconductor to the metal is reduced; 201208158 Conversely, in the case of reverse bias, from the metal to the semiconductor The barrier does not change, but the barrier from the semiconductor to the metal increases, and therefore, the metal semiconductor junction has a rectifying function, as will be understood by those skilled in the art. Please refer to FIG. 5, which is a first embodiment of the composite piezoelectric transducer device of the present invention, the composite piezoelectric transducer device comprising a substrate, a piezoelectric unit 2 and a second piezoelectric In the unit 3, the substrate is interposed between the first piezoelectric unit 2 and the second piezoelectric single magic. Therefore, the composite piezoelectric transducer can generate -AC power via vibration, and the AC power is full-wave rectified into a DC power by the first piezoelectric unit 2 and the second piezoelectric unit 3. The substrate 1 is preferably made of a flexible material such as plastic, and the substrate 1 is provided with a - joint surface u, a second joint surface 12, and a plurality of electrical connectors 13. The first bonding surface u and the second bonding surface 12 are two opposite surfaces, and the second piezoelectric unit 3 is combined with the second piezoelectric unit 2; the plurality of electrical connecting members 13 are made of a conductive material. Preferably, the metal is electrically conductive. The plurality of electrical connectors 13 are connected to the first bonding surface 11 and the second bonding surface 12 ′ to electrically connect the first piezoelectric unit 2 and the second voltage. Electrical unit 3. The third electric unit? There is a first piezoelectric layer, a first electrical layer 22 and a second conductive layer 23. The first piezoelectric layer U is preferably made of titanic acid or oxygen (10), etc., smear, silk splashing, gelling, hot, screen printing, chemical _ saga, electron beam clocking, A handle is formed by a laser deposition method or an atomic layer deposition method. The first electrical layer 21 is provided with a first surface 211 and a second surface 212. The surface is called the second surface 212. The first 201208158 is made of a conductive metal material, and the first and second opposing surfaces are respectively bonded to the first joint surface of the substrate 1. The first surface 211 of the layer 21, And the first conductive layer (10), the electrical layer 21 (f) is an ohmic contact; the second conductive layer 23 is at least one of a metal material such as a ship, a silver, a copper, or a copper, and is an electron forging method and a hot steaming clock. A method such as a method, a screen printing method, a chemical vapor deposition method, or the like, a lightning-stacking method, an atomic layer deposition method, or a coating method in which the first piezoelectric layer is in a Schottky contact. The first conductive layer 23 and the first piezoelectric layer have a second piezoelectric layer 31 and a third conductive acid conductive layer 33. Preferably, the second piezoelectric layer 31 is made up of a fault=method=print: ray method, direct current sol, laser; product: or two surface 祀 and the fourth surface 312 is = electric layer 32 is preferably The second surface of the third layer 1 of the second piezoelectric layer 31 is bonded to the substrate, and the second surface is bonded to the substrate. The electrical layer 31' and the third conductive layer is preferably composed of gold n and more frequent blue method, direct current method, hot steaming county, screen printing/chemical gas: 3-party first laser deposition method, atomic layer deposition: or coating The fourth conductive layer 33 is bonded to the second (four) Ζ 201208158 33; the surface 312 ′ and the fourth conductive layer 33 and the second piezoelectric layer 31 are Schottky contacts. The first conductive layer 22 of the piezoelectric layer 2 and the third conductive layer 32 of the second electrode 3 are electrically connected; the first piezoelectric layer: the second conductive layer 23 and the fourth conductive layer of the second piezoelectric unit 3 are electrically connected one day. Therefore, the conductive layers of the first piezoelectric unit 2 and the second electrode 3 having the same metal semiconductor junction (i.e., ohmic contact or Schott: contact) are electrically connected. The first conductive=2 and the third conductive layer 32 can be electrically connected through the plurality of electrical connectors 13 of the substrate; the conductive material can also be selected to form the substrate and the electricity is omitted. The connection of the connectors 3 directly passes through the substrate [achieves electrical connection; or 'can also be electrically connected via an external gold conductive material. The operation of the composite (four) wire-changing device of the present invention is as follows: since the substrate 1 has flexibility, when one end of the substrate i is vibrated by vibration (for example, oscillating), it can be disposed on the substrate 1. Each material layer is also deformed by the vibration of the basin. Please _6a ride, money, and this composite piezoelectric transducer to generate electricity (4). When the substrate 摆动 is swung upward, the first surface 211 and the second surface 212 of the first piezoelectric layer 21 are respectively subjected to a stress and a stress, thereby collecting a negative charge at the first surface 211, and The second surface 212 accumulates a positive charge; at the same time, the third surface 311 and the fourth surface 312 of the second electrical layer 31 are respectively subjected to the contraction stress and the tensile stress, thereby accumulating a positive charge on the third surface 311. And a negative charge is concentrated on the fourth surface 312. If the first conductive layer 22 and the third conductive layer 32 that are electrically connected and have ohmic contacts are grounded, the first conductive layer 22 and the second conductive layer 23 are forwardly biased by the 201208158, The barrier of the semiconductor to the metal is reduced, and the third conductive layer Μ and the fourth conductive layer 33 are reversely biased, and the barrier from the semiconductor to the metal is added, so that 'the parallel effect of the impedance is obtained— By reducing the barrier, the second conductive layer 23 and the fourth conductive layer which are electrically connected and have Schottky contact can rotate a positive voltage. 曰Conversely, please refer to Figure 6b. A schematic diagram of the composite piezoelectric transducer of the present invention swinging downwardly to generate electricity. When the base is concentrated on the first surface 211 and the second surface of the piezoelectric layer 21, positive and negative charges; The third surface 3 ι and the fourth surface 312 of the electrical layer 31 respectively collect a negative charge and a positive charge. If the first conductive layer 22 and the third conductive which are electrically connected and have ohmic contact, the first conductive layer 22 and the third conductive layer The second conductive layer 23 between the material direction =, the rotation from the semiconductor to the metal increases, and the The three conductive layers % and the = four conductive layers 33 are forward biased, and the barrier from the semiconductor to the metal is reduced, so that a reduced barrier can be obtained by the impedance parallel effect, so that they are electrically connected and both The second guide 2 with the Qiantite contact can output a positive voltage. And the fourth conductivity of the four conductors, the system of the seventh figure, riding the implementation of composite Wei-energy farms under the vibration of power generation self-rectification The voltage waveform diagram. Therefore, the composite piezoelectric transducer disclosed in the prior art does not need to pass through any rectifier circuit, and the power of the straight-wave rectification when the composite filament is subjected to the force vibration. The second embodiment of the present invention is different from the first embodiment. The difference between the embodiment and the first embodiment is that the first conductive unit is: -11 - 201208158. The second conductive layer 23 is bonded to the substrate 1. a bonding surface u, and the second piezoelectric unit 3 is bonded to the second bonding surface 12 of the substrate 1 by the fourth conductive layer 33. The +, if electrically connected and having the first ohmic contact The conductive layer 22 and the third conductive layer 32 are grounded, and the first conductive layer is oscillated upward when the substrate is twisted upward 22 is oppositely biased between the second conductive layer 23 and the third conductive layer 32 and the fourth conductive layer 33 are forwardly biased, and are electrically connected and both have Schottky contact second conductive Layer 23 and fourth. The conductive layer 33 can output a positive voltage; otherwise, when the substrate 丨 is swung downward, the first conductive layer 22 and the second conductive layer 23 are forward biased, and the The third conductive layer 32 and the fourth conductive layer 33 are reversely biased, and the second conductive layer 23 and the fourth conductive layer 33 which are electrically connected and have the Schottky contact can output a positive voltage. Therefore, the present invention In the first embodiment, the first piezoelectric unit 2 and the second piezoelectric unit 3 are respectively combined with a conductive layer having an ohmic contact (ie, the first conductive layer 22 and the third conductive layer 32). In the second substrate, the surface, and the second embodiment of the present invention, the first electric unit 2 and the second piezoelectric unit 3 are both electrically conductive layers with Schottky contact. The second conductive layer 23 and the fourth conductive layer 33 are respectively bonded to the opposite surfaces of the substrate 1. In other words, the first piezoelectric unit 2 and the second piezoelectric unit 3 are bonded to the substrate! The conductive layer of the opposite surface has the same metal semiconductor junction (ie, ohmic contact or Schottky junction). The composite piezoelectric transducer of the present invention can generate the alternating current by using vibration, and the piezoelectric material When in contact with a metal material, the generated electric potential P is rectified to full-wave in the early wall. Therefore, the present invention has no external rectification power ~12 — 201208158 power loss of the road, and has the effect of improving the piezoelectric transducing efficiency. In the composite piezoelectric transducer device of the present invention, when the alternating current is generated by vibration and the piezoelectric material is brought into contact with the metal material, the generated potential barrier is full-wave rectified into a continuous current. Therefore, the cost of the external rectification circuit of the present invention has the effect of reducing the cost of constructing the piezoelectric transducing system. The composite piezoelectric transducer device of the present invention can generate the alternating current by vibration, and when the piezoelectric material is in contact with the metal material, the generated potential P is fully wave-wave rectified into a continuous current. Therefore, the present invention has no external rectification. The volume required for the circuit has the effect of reducing the amount of space used and the number of devices per unit volume. Although the present invention has been disclosed in the above-described preferred embodiments, it is not intended to limit the invention, and it is still within the spirit and scope of the present invention. The technical material to be protected by the invention is therefore subject to the definition of the patent application scope attached to it. [Simple description of the diagram] Figure la: Schematic diagram of the unloaded force of the dragon piezoelectric transducer. Figure lb: The Xilai electric device is subjected to tensile stress. Figure 1c: The piezoelectric transducer is subjected to the contraction stress; f2: the voltage waveform after the piezoelectric transducer is used to generate electricity? Figure 3: Bridge rectifier circuit diagram of a conventional piezoelectric transducer. Brother 4: The electrical shape diagram of the bridge rectification after the piezoelectric transducer device is used for power generation. —13 — 201208158 Fig. 5 is a combined perspective view of the first embodiment of the composite piezoelectric transducer device of the present invention. Fig. 6a is a schematic view showing the upward swing power generation of the first embodiment of the composite piezoelectric transducer device of the present invention. Fig. 6b is a schematic view showing the downward swinging power generation of the first embodiment of the composite piezoelectric transducer device of the present invention. Fig. 7 is a diagram showing voltage waveforms of the self-rectifying after power generation in the first embodiment of the composite pressure-relieving device of the present invention. Fig. 8 is a perspective view showing the combination of the second embodiment of the composite electric-reciprocal transducer of the present invention. [Main component symbol description] [Invention] 1 substrate 12 second bonding surface 21 first piezoelectric layer 212 second surface 23 second conductive layer 31 second piezoelectric layer 312 fourth surface 33 fourth conductive layer 11 first Bonding surface 13 electrical connector 2 first piezoelectric unit 211 first surface 22 first conductive layer 3 second piezoelectric unit 311 third surface 32 third conductive layer [known] 201208158 91 piezoelectric element 92 tensile stress 93 Compressive stress. 94. Electronics
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