201208086 六、發明說明： 【發明所屬之技術領域】 本發明是有關於-種太陽能電池，特別是指一種具有 微米級或微米級以下導電線之電極的太陽能電池。 【先前技術】201208086 VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell, and more particularly to a solar cell having an electrode of a micron or micron or less. [Prior Art]
參閱圖1，目前的薄膜太陽能電池丨包括一 -形成在該基板11上的下電極層12…形成在該下電極層 2上的光電產生層13,及一設置在該光電產生層13上的 上電極層U’該光電產生層13在照光時以光伏特效應激發 出電荷載子進而產生光電流，並由該下電極層12與該上電 極層14相配合將產生的光電流向外輸出、應用。 由於被激·發出的電荷載子皆需要在該光電產生層13中 移動一段距離後才能被該上、下電極層12、14「捕捉」而 後輸出’而在該光電產生層13㈣動的過程中，被激發出 的電荷載子很有機會再復合’且移動的距離愈長電荷载子 復合的機率就愈高。所以’對目前薄膜太陽能電池丄而言 ’由於基板11、下電極層12、光電產生層13，及上電_ Η均成平整膜體態樣，以致於當照光激發出電荷載子時， 電荷載子在該光電產生層13中移動的距離相對較長，而有 較高的機率再復合，導致實際由上、下電極層12、14配合 輪出的光電流遠低於預期。 因此，對薄膜太陽能電池1而言，如何減少電荷載子 在該光電產生層13中的移動距離，使電荷載子的復合率降 低以提升光電流輸出效率，從而提升太陽能電池整體發電 201208086 效能，一直是亟待突破的技術瓶頸。 【發明内容】 因此，本發明之目的，即在提供―種可以減少電荷載 ^合率以提升光電流輸出效率的具有微米級或微米級以 下導電線之電極的太陽能電池。 於疋’本發明具有微米級或微米級以下導電線之電極 的太陽能電池包含一基板、一雷 止兩+ ^ 下電極、一光電產生體，及 一上電極。 該下電極以導電材料形成在該基板上，包括一底材， 及多數尺度屬微米級或微米級以下的導 的至少-部分與該底材連接。 母導電線 孩光電產生體自該底材向上形成並包覆該等導電線， 在照光時以光伏特效應產生光電流。 該上電極形成在該光電產生體上並可導電，與該下電 極彼此.配合將光電流向外界輸出。 本發明之功效在於：藉著包括底材及多數導電線的下 電極結構，大幅減少電荷載子在光電產生體的移動距離以 大幅降低復合機率，提高光電流輸出效率。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中’類似的元件是以相同的編號來表示。 201208086 參閱圖2’本發明具有微米級或微米級以下導電線之電 極的太陽能電池之一第一較佳實施例包含一基板2、一下電 極3、一光電產生體4’及一上電極5。Referring to FIG. 1, a current thin film solar cell stack includes a lower electrode layer 12 formed on the substrate 11, a photo-generated layer 13 formed on the lower electrode layer 2, and a photo-generated layer 13 disposed on the photo-generated layer 13. The upper electrode layer U' emits a charge current to generate a photocurrent by a photovoltaic effect when the light is generated, and the photocurrent generated by the lower electrode layer 12 cooperates with the upper electrode layer 14 to output the photocurrent. application. Since the excited charge carriers need to be moved in the photoelectric generating layer 13 for a certain distance, they can be "captured" by the upper and lower electrode layers 12, 14 and then outputted while the photo-generated layer 13 (four) is moving. The excited charge carriers have a good chance to recombine' and the longer the distance traveled, the higher the probability of charge carrier recombination. Therefore, 'for the current thin film solar cell '', since the substrate 11, the lower electrode layer 12, the photo-generated layer 13, and the power-on _ are both flattened, so that when the photo-excited charge carriers, the electric load The distance that the sub-movement moves in the photo-generation layer 13 is relatively long, and there is a high probability of recombination, resulting in a photocurrent that is actually rotated by the upper and lower electrode layers 12, 14 to be much lower than expected. Therefore, for the thin film solar cell 1, how to reduce the moving distance of the charge carriers in the photoelectric generating layer 13, and reduce the recombination rate of the charge carriers to improve the photocurrent output efficiency, thereby improving the overall efficiency of the solar cell 201208086, It has always been a technical bottleneck that needs to be broken. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a solar cell having an electrode having a micrometer- or micro-scale lower conductive line which can reduce the charge-to-charge ratio to improve the photocurrent output efficiency. The solar cell of the present invention having an electrode of a micron- or micro-scale or less conductive line comprises a substrate, a thundering two + ^ lower electrode, a photo-generation body, and an upper electrode. The lower electrode is formed of a conductive material on the substrate, including a substrate, and at least a portion of the majority of the micron-sized or micro-scaled leads are connected to the substrate. The mother conductive wire is formed from the substrate upward and covers the conductive wires, and generates a photocurrent by a photovoltaic effect during illumination. The upper electrode is formed on the photoelectric generating body and is electrically conductive, and cooperates with the lower electrode to output a photocurrent to the outside. The invention has the advantages of greatly reducing the moving distance of the charge carriers in the photoelectric generating body by the bottom electrode structure including the substrate and the plurality of conductive wires to greatly reduce the composite probability and improve the photocurrent output efficiency. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. 201208086 Referring to Fig. 2', a first preferred embodiment of the solar cell of the present invention having an electrode of a micron or sub-scale conductivity comprises a substrate 2, a lower electrode 3, a photo-generation body 4' and an upper electrode 5.
該基板2包括一可透光的基材21，及一形成在該基材 21底面上的抗反射層22，該抗反射層22在照光時大幅減 少入射光一次反射後即離開的光量，進而增加進入該光電 產生體4的入射光量，較佳地，該基材21由透光材料所構 成’例如透明導電玻璃（TC0)、鈉玻璃、鉀玻璃、石英等硬 質透光材料構成’亦或是例如聚醚亞胺（pET )、聚碳酸脂 (pc)、聚萘二甲酸乙二醇脂（PEN)等軟性可撓式透光材 料構成，使本實施例所製得的太陽能電池亦可由該基材2 i 底面受光，再配合該抗反射層22增加入射光量，進而增加 該光電產生體4的光子吸收效率。 該下電極3以導電材料形成在該基材21之一相反於該 如反射層22之頂面上，並包括一底材31，及多數尺度屬微 米級或微米級以下的導電線32，每一導電線32的至少一部 刀/、忒底材31連接，在本實施例中，每一導電線32是以 —端部與該底材31連接，另—端部形成自由端部。 ^在本例中，該等導電線32是先在該底材31上形成一 經過陽極氧化處理而具有尺度屬微米級或微米級以下之| 數孔洞的氧化紹膜後，再以導電材料於該等孔洞中成型德 ，除°亥氧化紹臈後，將會形成如圖2中所示的，每一導電 =32均是向上直立地連接於該底材3卜而該導電線犯的 類種類是選自銦錫氧化物（Indium Tin 〇xide，.iT〇)、姻 201208086 辞氧化物（Indium Zinc Oxide，IZO )、鋁辞氧化物（ Aluminum Znic Oxide，AZO )等透明導電材料，或選自鐵（ Fe )、鈷（Co ) ' 鎳（Ni )、銅（Cu )、銦（In )、錫（Sn )、 鋅（Zn)、金（Au)、銀（Ag)、鋁（A1)、錳（Μη)等導電 金屬材料構成。 配合參閱圖3，值得一提的是，如果使用化學氣相沉積 法（CVD)、物理氣相沉積法（Pvd)、電化學電鍍法來成長 該等導電線32’，是先在該基板2上形成該底材31後，再 自該底材31以向上且有角度地形成該等導電線32,，其中 ，任一導電線32’，可以是向上且以9〇度直立地連接該底 材31，或者是向上且小於9〇度歪斜地連接該底材31，並 且，由於以化學氣相沉積法（CVD)、物理氣相沉積法 PVD )、電化學電鍍法來成長該等導電線32，時，在該等導 電線32,間會同時沉積而形成一層導電薄膜，如圖3所示。 該光電產生體4自該底材31向上形成並包覆該等導電 線32，並包括經過摻雜而形成接面結構（p_N juncti〇n) 的一第一型半導體41與一第二型半導體42，及一介於該第 -型半導體41與第二型半導體42間的染料吸收層43，該 第-型半導體41與第二型半導體42在照光時相配合以光 伏特效應產生光電流，並輔以該染料吸收層43在照光時增 加接面結構吸收光子的機率。 要說明的是，該第一型半導體41是選自N型摻雜或 型摻雜的半導體材料所構成，而該第二型半導體42是㈣ 應該第-型半導體41選擇？型摻雜或N型摻雜的半導體木 201208086 料構成。在本實施例中，該第一型半導體41為一 n型材料 ’遠第一型半導體42為-p型材料；另外，#該第一型半 導體41為一 P型材料，該第二型半導體42為一 N型材料 時，上述的配合皆可形成接面結構，在照光時相配合以光 伏特效應產生光電流。另外，該染料吸收層43是選自有機 釕金屬（RU-biPyridine;N3)系列的金屬錯合物染料、N7i9 染料、N749⑶ack Dye)染料，或如紫質、香豆素、花青 羅丹明等B系列染料，在本例中，該染料吸收層a是藉 由浸泡已調配好的各式染料溶液（酒精及染料）後，取出 置於室溫下自然風乾而形成。 此外’由於該光電產生體4自該底材31向上形成並包 覆該等導電線32，使該光電產生體4的表面實質是一不平 整、具有高低起伏的表面，如此，可大幅增加照光面積進 而大幅提升激發出電荷載子的機率。 配合參閱圖4,該上電極5形成在該光電產生體4上並 可導電’與該下電極3彼此配合將光電流向外界輸出，在 本例中’該上電極5包括一與該光電產生體4電連接的透 光導電層5卜及-設置於該透光導電層51上供打線而將電 流向外界輸出的電極膜52’其中’該透光導電層51為以例 如銦錫氧化物、銦辞氧化物、銘鋅氧化物、氣錫氧化物等 可透光且具導f性㈣構成，該電極膜52關如金、銀、 鋁、鋁/鎳等金屬材料構成，較佳地’該電極膜52可為如 圖4所示的魚骨式態樣，使光入射時’減少被該不透光的 電極膜52阻擋入射的光源，而增加光入射面積，進而提升 201208086 光電流的產生。 本發明具有微米級或微米級以下導電線之電極的太陽 能電池在照光時，藉著下電極3的底材31以平整膜體輔以 多數自底材31向上延伸之多數導電線32的立體結構，有 效降低被激發產生的電荷載子在該光電產生體4中移動的 距離，從而降低移動過程中再複合的機率，達到提升實際 由上、下電極3、5配合輸出的光電流，提升整體光電流輸 出效能》 參閱圖5’要補充說明的是，本發明具有微米級或微米 級以下導電線之電極的太陽能電池，可配合抗反射層、反 射層的應用而大幅增加照光時的光吸收率，更進一步地提 升整體的光電流輸出效能，在本例中，該基材21為可透光 ，當該抗反射層22為受光面而且單面收光時，於該光電產 生體4與該電極膜52間不需以透明導電材料形成該透光導 電層51，而是形成一以金屬材料構成的金屬反射層9〇〇, 如圖5所示，使部分未被該光電產生體4吸收的光子經該 金屬反射層900反射後再進入該光電產生體4中，以增加 光利用率。 參閲圖6,而當雙面受光時，則是藉由在該上電極5上 形成一層抗反射層901，如圖β所示，以增加光利用率。 參閱圖7、8 ’在本例中是以該基板2作為受光面而單 面或雙面收光，但是亦可以該上電極5作為受光面而單面 收光，此時，是在該上電極5上形成一層抗反射層9〇2，並 在該可透光的基材21底面是形成一層反射層9〇3,如圖7 201208086 所示，該基材21與該反射層903構成該基板2,，使經該光 電產生體4後未被吸收的光子藉由該反射層9〇3反射再被 該光電產生體4吸收，進而增加光利用率；並且，以該上 電極5作為受光面而單面收光時，且該基材21，為以例如矽 基材、不銹鋼基材、金屬基材（如鉬、鋁、銅等）等不透 光基材構成時’該基材21’底面财需形成如圖7所示的反 射層903，如圖8所示。The substrate 2 includes a light transmissive substrate 21 and an anti-reflection layer 22 formed on the bottom surface of the substrate 21. The anti-reflection layer 22 greatly reduces the amount of light that is left after the incident light is reflected, thereby further reducing the amount of light that is left after the incident light is reflected. Increasing the amount of incident light entering the photo-generation body 4, preferably, the substrate 21 is made of a light-transmitting material, such as a transparent light-transmitting material such as transparent conductive glass (TC0), soda glass, potassium glass, or quartz, or It is composed of a flexible flexible light-transmitting material such as polyetherimide (pET), polycarbonate (pc), or polyethylene naphthalate (PEN), so that the solar cell obtained in the present embodiment can also be The bottom surface of the substrate 2 i receives light, and the amount of incident light is increased by the anti-reflection layer 22, thereby increasing the photon absorption efficiency of the photoelectric generator 4. The lower electrode 3 is formed of a conductive material on a top surface of the substrate 21 opposite to the reflective layer 22, and includes a substrate 31, and most of the conductive lines 32 of the micrometer order or less are used. At least one of the knives/the base material 31 of the conductive wire 32 is connected. In the present embodiment, each of the conductive wires 32 is connected to the substrate 31 by an end portion, and the other end portion is formed with a free end portion. In this example, the conductive lines 32 are formed on the substrate 31 by anodizing and having a number of pores of a micron order or less, and then using a conductive material. The forming of the holes, in addition to the oxidization, will form as shown in Figure 2, each of which is electrically connected to the substrate 3 and is electrically connected to the substrate. The type is selected from the group consisting of indium tin oxide (Indium Tin 〇xide, .iT〇), Invalidity of Indium Zinc Oxide (IZO), Aluminum Znic Oxide (AZO), or the like. From iron (Fe), cobalt (Co) 'nickel (Ni), copper (Cu), indium (In), tin (Sn), zinc (Zn), gold (Au), silver (Ag), aluminum (A1) And a conductive metal material such as manganese (Mn). Referring to FIG. 3, it is worth mentioning that if the conductive lines 32' are grown by chemical vapor deposition (CVD), physical vapor deposition (Pvd), or electrochemical plating, the substrate 2 is first used. After the substrate 31 is formed thereon, the conductive lines 32 are formed upwardly and angularly from the substrate 31, wherein any of the conductive lines 32' may be upright and connected to the bottom at 9 degrees. The material 31 is connected to the substrate 31 obliquely upwards and less than 9 degrees, and is grown by chemical vapor deposition (CVD), physical vapor deposition (PVD), electrochemical plating. 32, at the same time, the conductive lines 32 are simultaneously deposited to form a conductive film, as shown in FIG. The photoelectric generating body 4 is formed upward from the substrate 31 and covers the conductive lines 32, and includes a first type semiconductor 41 and a second type semiconductor which are doped to form a junction structure (p_N juncti〇n) And a dye absorbing layer 43 interposed between the first type semiconductor 41 and the second type semiconductor 42. The first type semiconductor 41 and the second type semiconductor 42 cooperate to generate a photocurrent by a photovoltaic effect when illuminated. In addition, the dye absorbing layer 43 increases the probability of the junction structure absorbing photons when illuminated. It is to be noted that the first type semiconductor 41 is selected from an N-type doped or type doped semiconductor material, and the second type semiconductor 42 is (4) should the first type semiconductor 41 be selected? Type doped or N-doped semiconductor wood 201208086 composition. In the present embodiment, the first type semiconductor 41 is an n-type material 'the far first type semiconductor 42 is a -p type material; in addition, the first type semiconductor 41 is a P type material, and the second type semiconductor When 42 is an N-type material, the above-mentioned combination can form a junction structure, and when combined with light, a photocurrent is generated by a photovoltaic effect. Further, the dye absorbing layer 43 is a metal complex dye selected from the group consisting of an organic ruthenium metal (RU-biPyridine; N3) series, a N7i9 dye, a N749 (3) ack Dye) dye, or a purple color, a coumarin, a cyanine rhodamine, etc. B series dyes, in this example, the dye absorbing layer a is formed by immersing various dye solutions (alcohol and dye) which have been prepared and then taking them out and drying them at room temperature. In addition, since the photoelectric generating body 4 is formed upward from the substrate 31 and covers the conductive lines 32, the surface of the photoelectric generating body 4 is substantially uneven and has a high and low undulating surface, so that the illumination can be greatly increased. The area in turn greatly increases the probability of inducing charge carriers. Referring to FIG. 4, the upper electrode 5 is formed on the photoelectric generating body 4 and is electrically conductive and cooperates with the lower electrode 3 to output a photocurrent to the outside. In this example, the upper electrode 5 includes a photo-generation body. 4 electrically connected light-transmitting conductive layer 5 and an electrode film 52' disposed on the light-transmitting conductive layer 51 for wire-carrying to output current to the outside, wherein the light-transmitting conductive layer 51 is made of, for example, indium tin oxide The indium oxide, the zinc oxide, the gas tin oxide, and the like are light-transmissive and have a f-type (four). The electrode film 52 is made of a metal material such as gold, silver, aluminum, aluminum/nickel, preferably ' The electrode film 52 can be a fishbone-like aspect as shown in FIG. 4, so that when the light is incident, the light source that is blocked by the opaque electrode film 52 is reduced, and the incident area of the light is increased, thereby increasing the photocurrent of 201208086. produce. The solar cell of the present invention having the electrode of the micron or micron conductive wire is illuminated by the substrate 31 of the lower electrode 3, and the three-dimensional structure of the plurality of conductive wires 32 extending upward from the substrate 31 is supplemented by the flat film body. , effectively reducing the distance that the generated charge carriers move in the photoelectric generating body 4, thereby reducing the probability of recombination during the moving process, thereby improving the photocurrent actually outputted by the upper and lower electrodes 3, 5, and improving the overall Photocurrent output performance" Referring to FIG. 5', it is to be noted that the solar cell of the present invention having the electrode of the micron or micron conductive line can be combined with the antireflection layer and the reflective layer to greatly increase the light absorption during illumination. The ratio further improves the overall photocurrent output performance. In this example, the substrate 21 is permeable to light. When the anti-reflection layer 22 is a light receiving surface and is single-sided, the photo-generation body 4 is The light-transmissive conductive layer 51 is not required to be formed of a transparent conductive material between the electrode films 52, but a metal reflective layer 9〇〇 made of a metal material is formed, as shown in FIG. The photons absorbed by the photoelectric generating body 4 are reflected by the metal reflective layer 900 and then enter the photovoltaic generating body 4 to increase the light utilization efficiency. Referring to Fig. 6, when the double-sided light is received, an anti-reflection layer 901 is formed on the upper electrode 5 as shown in Fig. β to increase the light utilization efficiency. Referring to Figures 7 and 8 'in this example, the substrate 2 is used as the light-receiving surface to receive light on one side or both sides. However, the upper electrode 5 may be used as a light-receiving surface to receive light on one side. An anti-reflection layer 9〇2 is formed on the electrode 5, and a reflective layer 9〇3 is formed on the bottom surface of the light-permeable substrate 21. As shown in FIG. 7 201208086, the substrate 21 and the reflective layer 903 constitute the layer. The substrate 2 is such that the photons that are not absorbed by the photoelectric generating body 4 are reflected by the reflective layer 9〇3 and absorbed by the photoelectric generating body 4, thereby increasing the light utilization efficiency; and the upper electrode 5 is used as the light receiving unit. When the surface of the substrate 21 is light-receiving, and the substrate 21 is made of, for example, a ruthenium substrate, a stainless steel substrate, or a metal substrate (such as molybdenum, aluminum, copper, etc.), the substrate 21 is formed. The bottom surface is required to form a reflective layer 903 as shown in FIG. 7, as shown in FIG.
此外補充說明的是，於該光電產生體4的第一、二型 半導體41、42間可以形成—層減少電荷載子復合率以增加 光電流產生的緩衝層’該緩衝層是選自硫化録（cds)、三 硫化二銦（In2S3)、硫化鋅（ZnS)、硒化鋅（We)、氧化 鋅Un〇)、氧化猛辞（ZnMg〇)、氣氧化銘（in(〇H)3)、砸 化姻.（In2Se3)，或二氧化錫（Sn〇2)等材料而構成一異質 接面；或是選自非晶石夕（Am〇rph〇us siHc〇n，心）、微晶石夕 (Microcrystalline silicon, μο-Si)^ (Polycrysta]line silicon，poly-Si)等材料構成一同質接面。 參閱圖9,本發明具有微米級或微米級以下導電線之電 極的太陽能電池之—第二較佳實施例與該第一較佳實施例 相似’其不同處在於該等導電線32，’是分別由多數平均粒徑 屬微米級或微米級以下之導電粒+ 33彼此連接㈣，而隨 機地形成且不規則地分佈，如此該等導電線犯，，視連接成奉 的導電粒子33數目，报占旦τ 丁 双㈢形成長紐不一的形態，但每一導電線 32”至少有一部分會與該底材31連接。 配合參閱圖 10，較佳地，在該等導電粒子33後 先形 201208086 法、電!:雷：例如使用化學氣相沉積法、物理氣相沉積 導電= 方式，之後該光電產生體4形成於該 、 该導電膜34使該等導電粒子33彼此間更容 效了:形成該等導電線32，，，進而提升整體光電流輸出的 、中導電膜34是選自銦錫氧化物、銦辞氧化物 或紹鋅氧化物等材料構成。In addition, it can be additionally explained that a buffer layer for reducing photocharge recombination rate can be formed between the first and second type semiconductors 41 and 42 of the photoelectric generating body 4 to increase the photocurrent generation. (cds), indium trisulfide (In2S3), zinc sulfide (ZnS), zinc selenide (We), zinc oxide Un〇), oxidized dynamism (ZnMg〇), gas oxidation (in (〇H) 3) , (In2Se3), or tin dioxide (Sn〇2) and other materials to form a heterojunction; or selected from amorphous 夕 ( (Am〇rph〇us siHc〇n, heart), microcrystalline Materials such as Microcrystalline silicon (μο-Si)^ (Polycrysta) line silicon, poly-Si) form a homojunction junction. Referring to FIG. 9, a solar cell of the present invention having electrodes of a micron or sub-scale conductive line is similar to the first preferred embodiment. The difference is that the conductive lines 32 are Each of the conductive particles + 33 having an average particle diameter of a micron order or less is connected to each other (4), and is randomly formed and irregularly distributed. Thus, the conductive lines are erected, and the number of conductive particles 33 connected to each other is regarded as The singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the electrically conductive particles 33 is preferred. 201208086 Method, electricity!: Ray: For example, using chemical vapor deposition, physical vapor deposition conduction = mode, after which the photoelectric generating body 4 is formed, the conductive film 34 makes the conductive particles 33 more compatible with each other The intermediate conductive film 34 is formed of a material selected from the group consisting of indium tin oxide, indium oxide, and zinc oxide to form the conductive lines 32.
特職明的疋，該等導電線32，，是先將該多數平均粒 =不米等級之導電粒子33混人—溶劑中成—溶液後，將 該溶液以擇自旋佈、塗佈、嗔覆 '嘴灌（Spray)，或此等之 的方式在4底材31上形成_塗膜後，再移除溶劑後形 成*並且部分的該等導電粒子33與該底材31間會自然形 成工隙6 ’該空隙6在該光電產生體4形成後而與外界隔離 —在形成錢料電層51時不會在該空隙6巾形成而造成 凡件電H異常的缺陷，在本例巾，該等導電粒子Μ可以是 選自選自銦錫氧化物、銦鋅氧化物、鋁鋅氧化物等透明導 電材料，或選自鐵 '姑、錄、銅、姻、錫、辞、金、銀、 鋁、錳等導電金屬材料以喷灑方式構成。 ，’ VT、上所述，本發明具有微米級或微米級以下導電線之 電極的太陽能電池與現有的薄膜太陽能電;也i相比，本發 月藉由在。玄下電極3的底材31上形成該等導電線32的立 體結構，減少該光電產生體4吸收光子後激發出的電荷載 子的移動㈣，it而減少電荷載子在光電產生豸4内的移 動途中復合成電子電洞對的機率，從而大幅提昇整體的光 電流輸出效能。 10 201208086 2者，由於该光電產生體4的表面實質是一不平整、 I有高低起伏之面’與現有的薄膜太陽能電池1相比，增 加更多的照光面積而提升光子吸收的機率，使該光電產生 體4激發出電荷载子的機率大幅提升，並配合該下電極3 5體、”。構’從而提昇整體發電效能，故確實能達成本發 明之目的。 淮以上所述者，僅為本發明之較佳實施例而已，當不 能以此限^本發明實施之範圍，即大凡依本發明中請專利 辄圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1疋QJ視不思圖，說明目前的薄膜太陽能電池； 圖2是-剖視示意圖，說明本發明具有微米級或微米 級以下導'線之.電極的太陽能電池的一第一較佳實施例； 圖3是-剖視示意圖，說明本發明的該第一較佳實施 例中的不同態樣之導電線； 圖4是-俯視圖，輔助說明該第一較佳實施例中的上 電極的一實施態樣； 圖一剖視示意圖，輔助說明該第-較佳實施例； 圖一剖視示意圖，輔助說明該第—較佳實施例； 圖7是一剖視示意圖，辅助說明該第-較佳實施例； 圖8是一剖視不意圖，輔助說明該第一較佳實施例； 圖9是一剖視示意圖，說明本發明具有 級以下導電線之電極的太陽能電池的一第二較佳實施例； 11 201208086 及 圖10是一剖視示意圖，輔助說明圖9的該第二較佳實 施例。Specifically, the conductive wire 32 is obtained by mixing the majority of the average particle=non-meter-grade conductive particles 33 into a solution in a solvent, and then applying the solution to the spin coating, coating, and After the smear film is formed on the 4 substrate 31, the solvent is removed to form a * and a portion of the conductive particles 33 and the substrate 31 are naturally Forming the gap 6', the gap 6 is isolated from the outside after the photoelectric generating body 4 is formed - when the money layer 51 is formed, it does not form in the gap 6 and causes a defect in the electrical H abnormality of the piece, in this example The conductive particles Μ may be selected from a transparent conductive material selected from the group consisting of indium tin oxide, indium zinc oxide, aluminum zinc oxide, or the like, or selected from the group consisting of iron, australis, bronze, marriage, tin, rhyme, gold, Conductive metal materials such as silver, aluminum, and manganese are formed by spraying. , VT, described above, the solar cell of the present invention having an electrode of a micron or sub-scale conductivity line is compared with the existing thin film solar cell; The three-dimensional structure of the conductive lines 32 is formed on the substrate 31 of the lower electrode 3, and the movement of the charge carriers excited by the photo-generated body 4 after the photons are absorbed is reduced (4), and the charge carriers are reduced in the photoelectric generation 豸4. The probability of being combined into an electronic hole pair during the movement, thereby greatly improving the overall photocurrent output performance. 10 201208086 2, since the surface of the photoelectric generating body 4 is substantially uneven, and the surface of the high and low undulations is increased compared with the existing thin film solar cell 1 , the photon area is increased to increase the probability of photon absorption, so that the probability of photon absorption is increased. The photoelectric generator 4 greatly increases the probability of exciting the charge carriers, and cooperates with the lower electrode body to improve the overall power generation efficiency, so that the object of the present invention can be achieved. The present invention is not limited to the scope of the invention, and the simple equivalent changes and modifications made by the invention in the context of the invention and the description of the invention are still present. The invention covers the scope of the invention. [Fig. 1] QJ is a view of the current thin film solar cell; Fig. 2 is a cross-sectional view showing the present invention having a micron or micron level A first preferred embodiment of the solar cell of the electrode; FIG. 3 is a cross-sectional view showing the different conductive lines in the first preferred embodiment of the present invention; FIG. 4 is a plan view FIG. 1 is a cross-sectional view of the first preferred embodiment of the first preferred embodiment; FIG. 1 is a cross-sectional view of the first preferred embodiment; FIG. 1 is a cross-sectional view of the first preferred embodiment. Figure 7 is a cross-sectional view of the first preferred embodiment; Figure 8 is a cross-sectional view for assistance in explaining the first preferred embodiment; Figure 9 is a cross-sectional view showing the present invention A second preferred embodiment of a solar cell having electrodes of the following level of conductive lines; 11 201208086 and FIG. 10 is a schematic cross-sectional view of the second preferred embodiment of FIG.
12 201208086 【主要元件符號說明】 2… …·基板 4 · · • · · ·光電產生體 2，，. •…基板 41 · ——第一型半導體 2” .. • ·.基板 42 · ----第二型半導體 21 .. • ••基材 43 · ----染料吸收層 21’ * • ·.基材 5 .. 上電極 22 · · • · ·抗反射層 51 · • · · ·透光導電層 3… •…下電極 52 · ----電極膜 31 · · • · ·底材 900 • · · ·金屬反射層 32 * * • · ·導電線 901 * * ··抗反射層 32’ · • ••導電線 902 • - · ·抗反射層 32” · •…導電線 903 • · · ·反射層 33 . · • ••導電粒子 904 • · * ·反射層 34 . · • · ·導電膜 1312 201208086 [Description of main component symbols] 2... ...·Substrate 4 · · · · · · Photoelectric generator 2,,..... Substrate 41 · - First type semiconductor 2" .. · ·. Substrate 42 · -- --Second type semiconductor 21 .. •••Substrate 43 · ----Dye absorbing layer 21' * • ·. Substrate 5 .. Upper electrode 22 · · · · · Anti-reflective layer 51 · · · · ·Light-transmissive conductive layer 3... •...lower electrode 52 ·-electrode film 31 · · · · · Substrate 900 · · · · Metal reflective layer 32 * * • · · Conductive wire 901 * * · · Anti-reflection Layer 32' • • • • Conductive wire 902 • - • Anti-reflective layer 32 ” • • Conductive wire 903 • · · · Reflective layer 33 · · • • Conductive particles 904 • · * · Reflective layer 34 · · · · Conductive film 13