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TW201207885A - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method Download PDF

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Publication number
TW201207885A
TW201207885A TW100111328A TW100111328A TW201207885A TW 201207885 A TW201207885 A TW 201207885A TW 100111328 A TW100111328 A TW 100111328A TW 100111328 A TW100111328 A TW 100111328A TW 201207885 A TW201207885 A TW 201207885A
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TW
Taiwan
Prior art keywords
plasma processing
dielectric plate
processing apparatus
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plasma
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TW100111328A
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Chinese (zh)
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TWI492266B (en
Inventor
Ryota Yonezawa
Tetsuro Takahashi
Yoshinori Osaki
Kouki Suzuki
Tomohiro Saito
Jun Yamashita
Yoshihiro Sato
Toshihiko Shiozawa
Koichi Yamazaki
Kazuhiro Furuki
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Tokyo Electron Ltd
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Publication of TW201207885A publication Critical patent/TW201207885A/en
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Publication of TWI492266B publication Critical patent/TWI492266B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H10P50/242—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/166—Sealing means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The disclosed device has a ring shaped O-ring (29a), which is between a dielectric plate (28) and a support unit (13a) on a lid member (13), and has a spacer (60) which forms a gap (d), on the outer peripheral side of the O-ring (29a), between the dielectric plate (28) and the support unit (13a) of the lid member (13), the lid member being arranged above a processing container (1). Due to the gap (d), the lid member (13) and the dielectric plate (28) do not come into contact and become worn, even if the lid member (13) and the dielectric plate (28) thermally expand due to the heat of the plasma within the processing container (1), thus damage to the dielectric plate (28) and the generation of particles can be prevented.

Description

201207885 六、發明說明： 【發明所屬之技術領域】 本發明是有關電漿處理裝置及電漿處理方法。 【先前技術】 以往的電漿處理裝置是設有：使電漿產生的處理容器 的支撐部、及被置於該支撐部上，用以在和堵住處理容器 的上部開口的頂板之間密封處理容器的0型環等的密封構 件。而且，爲了從電漿照射所造成的劣化來保護該0型環 ，而提案一使處理容器的支撐部與頂板接觸而於其間無間 隙的構成（例如日本特開平6-1 12 168號公報）。又，亦提 案在支撐部與頂板之間設置樹脂層或襯裡（例如參照曰本 特開2004-134583號公報、特開2009-253161號公報等）。 【發明內容】 上述以往技術皆是使處理容器的支撐部與頂板直接接 觸，或在處理容器的支撐部與頂板之間存在樹脂層或襯裡 。但，支撐部或頂板會藉由處理容器內所產生的電漿的熱 而熱膨脹。因支撐部與頂板的熱膨脹率不同、及樹脂層或 〇型環的彈性變形，頂板與支撐部會接觸摩擦，或頂板破 損，而成爲微粒發生的原因之課題。 本發明是在於提供一種即使介電質板因爲處理容器內 的電漿照射而熱膨脹，也不會與支撐構件接觸，可極力防 止介電質板破損或介電質板受傷造成微粒的發生之電漿處 -5- 201207885 理裝置及電漿處理方法。 本發明的電漿處理裝置，係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 □； 介電質板，其係堵住上述電漿處理空間的上部： 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部； 密封構件，其係設於上述支撐部與上述介電質板之間 ，用以密閉上述電漿處理空間；及 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙。 在本發明的電漿處理裝置中，上述間隔件亦可斷續性 地設於上述密封構件的外周側。 又，本發明的電漿處理裝置中，上述間隔件亦可由贏 系樹脂或聚醯亞胺系樹脂所形成。 又，本發明的電漿處理裝置中，上述間隔件亦可爲具 備聚醯亞胺薄膜層及黏著層之聚醯亞胺膠帶》此情況，上 述間隔件的上述黏著層係被貼附於上述支撐部而固定爲理 想。 又，本發明的電漿處理裝置中， 上述密封構件可包含：第1密封構件、及設於該第1密 封構件的內周側的第2密封構件。 又，本發明的電漿處理裝置中，上述第1密封構件係 由氟系樹脂所形成。201207885 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a plasma processing apparatus and a plasma processing method. [Prior Art] A conventional plasma processing apparatus is provided with a support portion of a processing container for generating plasma, and is placed on the support portion for sealing between a top plate and an upper opening that blocks the processing container A sealing member such as a 0-ring of the container is processed. In addition, in order to protect the 0-ring from the deterioration caused by the plasma irradiation, it is proposed to have a configuration in which the support portion of the processing container is in contact with the top plate without a gap therebetween (for example, JP-A-6-1-12168) . Further, it is also proposed to provide a resin layer or a lining between the support portion and the top plate (for example, see JP-A-2004-134583, JP-A-2009-253161, etc.). SUMMARY OF THE INVENTION The above prior art has been such that the support portion of the processing container is in direct contact with the top plate, or a resin layer or lining is present between the support portion of the processing container and the top plate. However, the support or top plate will thermally expand by the heat of the plasma generated in the processing vessel. Since the thermal expansion coefficient of the support portion and the top plate are different, and the elastic deformation of the resin layer or the 〇-shaped ring, the top plate and the support portion are in contact with each other, or the top plate is broken, which causes the generation of fine particles. The present invention is to provide a method in which even if a dielectric plate is thermally expanded due to plasma irradiation in a processing container, it does not come into contact with the supporting member, and the dielectric plate is prevented from being damaged or the dielectric plate is damaged to cause the occurrence of particles. Slurry -5 - 201207885 Treatment and plasma treatment methods. A plasma processing apparatus according to the present invention includes: a processing container having a plasma processing space therein and having an upper portion opened; and a dielectric plate blocking an upper portion of the plasma processing space: a cover member Arranging on an upper portion of the processing container and having an annular support portion for supporting an outer peripheral portion of the dielectric plate; and a sealing member disposed between the support portion and the dielectric plate for sealing the above a plasma processing space; and a spacer provided on an outer peripheral side of the sealing member to form a gap between the support portion and the dielectric plate. In the plasma processing apparatus of the present invention, the spacer may be intermittently provided on the outer peripheral side of the sealing member. Further, in the plasma processing apparatus of the present invention, the spacer may be formed of a winn resin or a polyimide resin. Further, in the plasma processing apparatus of the present invention, the spacer may be a polyimide film having a polyimide film layer and an adhesive layer. In this case, the adhesive layer of the spacer is attached to the above. The support portion is fixed to be ideal. Further, in the plasma processing apparatus of the present invention, the sealing member may include a first sealing member and a second sealing member provided on an inner peripheral side of the first sealing member. Further, in the plasma processing apparatus of the present invention, the first sealing member is formed of a fluorine-based resin.

-6- 201207885 又，本發明的電漿處理裝置中，上述第2密封構件係 由耐電漿性比上述第1密封構件高的氟系樹脂所形成。 又，本發明的電漿處理裝置中，上述密封構件係具有 :第1部分、及設於該第1部分的內周側的第2部分，上述 第1部分係藉由真空密封性比上述第2部分高的材質所構成 ，上述第2部分係藉由電漿耐性比上述第1部分高的材質所 構成爲理想。 又，本發明的電漿處理裝置中，藉由上述間隔件所形 成之上述支撐部的上面與上述介電質板的下面之間的間隙 可爲0.05〜0.4mm的範圍內，更理想是0.05〜0.2mm的範圍 內，最好是0.05〜0.08mm的範圍內。 又，本發明的電漿處理裝置中，上述間隔件與上述密 封構件的間隔爲1〜1 〇mm的範圍內。 又，本發明的電漿處理裝置中，在上述蓋構件的內周 的壁面與上述介電質板的外周側壁之間形成有0.1〜1 mm 的範圍內的間隙。此情況，可藉由上述間隔件來將上述介 電質板定位於水平方向。 本發明的電漿處理方法，係使用電漿處理裝置來電漿 處理被處理體，該電漿處理裝置係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 □; 介電質板，其係堵住上述電漿處理空間的上部； 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部； 201207885 密封構件，其係設於上述支撐部與上述介電質板之間 ’用以密閉上述電漿處理空間：及 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙。 又，本發明的別的觀點的電漿處理裝置，係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 □； 介電質板，其係堵住上述電漿處理空間的上部； 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部； 密封構件，其係設於上述支撐部與上述介電質板之間 ，用以密閉上述電漿處理空間； 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙；及 觀察窗，其係用以辨識上述處理容器的內部。 而且，上述觀察窗係具有： 透明的窗構件，其係具備被插入形成於上述處理容器 的側壁的觀察用開口部內的突出部； 固定構件，其係由外部來固定上述窗構件： 密封構件，其係於上述觀察用開口部的周圍氣密地密 封上述處理容器的側壁與上述窗構件之間。 又，上述觀察用開口部的內面與上述突出部的表面係 形成以該突出部能夠插入上述觀察用開口部的範圍內的間 距來無間隙嵌合， -8 - 201207885 將上述突出部插入上述觀察用開口部，藉此使上述窗 構件安裝於上述處理容器的側壁。 此情況，上述突出部的前端面係配合上述處理容器的 側壁的內壁面的形狀來彎曲形成爲理想。 又，上述突出部的表面與上述觀察用開口部的內面的 間距係0.1 mm〜2mm的範圍內爲理想。 若根據本發明的電漿處理裝置及電漿處理方法，則在 處理容器的支撐部與介電質板之間設有用以密封電漿處理 空間的密封構件，且在密封構件的外周側設有用以在支撐 部與介電質板之間形成間隙的間隔件。因此，即使支撐部 或介電質板因爲處理容器內的電漿照射而熱膨脹，還是可 藉由間隔件在支撐部與介電質板之間形成間隙，防止支撐 部與介電質板摩擦。而且，可防止介電質板破損或摩擦造 成微粒發生。 【實施方式】 [第1實施形態] 以下，參照圖面來詳細說明有關本發明的電漿處理裝 置的實施形態。首先，一邊參照圖1〜3 —邊說明有關本發 明的第1實施形態的電漿處理裝置的構成。圖1是模式性地 顯示電漿處理裝置100的槪略構成的剖面圖。並且，圖2是 表示圖1的電漿處理裝置100的平面天線的平面圖，圖3是 說明電漿處理裝置1〇〇的控制系統的構成之圖面。 電漿處理裝置100是以例如具有複數的縫隙狀的孔的 -9- ¢. 201207885 平面天線，特別是 RLSA ( Radial Line Slot Antenna :徑 向線縫隙天線天線）來直接導入微波至處理容器內而使電 漿產生於處理容器內，藉此構成可產生高密度且低電子溫 度的微波激發電漿之RLS A微波電漿處理裝置。在電漿處 理裝置100中，可爲具有1χ10|(ι〜5xl012/cm3的電漿密度， 且0.7〜2eV的低電子溫度之電漿的處理。因此，電漿處理 裝置100可適合利用在各種半導體裝置的製造過程中，例 如氮化處理或氧化處理矽而形成氮化矽膜（SiN膜）或氧 化矽膜之目的。並且，電漿處理裝置10 0也適合利用在藉 由電漿來形成CVD膜或電漿蝕刻矽或氧化矽膜之目的。另 外，在本實施形態是舉使用在對被處理體進行電漿氮化處 理之目的時爲例來說明電漿處理裝置100。 電漿處理裝置100的主要構成是具備： 處理容器1，其係收容作爲被處理體的基板之半導體 晶圓（以下簡稱「晶圓」）W ; 載置台2，其係於處理容器1內載置晶圓W; 蓋構件13，其係具有開閉處理容器1的機能的同時支 撐介電質板； 氣體導入部15，其係被連接至氣體供給裝置18，導入 氣體至處理容器1內； 排氣裝置24，其係用以將處理容器1內予以減壓排氣 » 微波導入裝置27，其係設於處理容器1的上部，導入 微波至處理容器1內，作爲生成電漿的電漿生成手段；及 -10- 201207885 控制部50，其係控制該等電漿處理裝置100的各構成 部。 氣體供給裝置18可含於電漿處理裝置100的構成部分 ’或不含於構成部分，將外部的氣體供給裝置連接至氣體 導入部15來使用的構成。 處理容器1是藉由被接地的大致圓筒狀的容器所形成 。另外，處理容器1亦可藉由方筒形狀的容器所形成。處 理容器1是上部開口，具有由鋁等的材質所構成的底壁la 及側壁1 b。 在處理容器1的內部設有用以水平載置被處理體的晶 圓W的載置台2。載置台2是例如藉由AIN、Al2〇3等的陶瓷 所構成。其中特別是使用熱傳導性高的材質例如A1N爲理 想。此載置台2是藉由從排氣室11的底部中央延伸至上方 的圓筒狀的支撐構件3所支撐。支撐構件3是例如藉由A1N 等的陶瓷所構成。 並且，在載置台2設有用以罩蓋其外緣部或全面，且 引導晶圓W的罩構件4。此罩構件4是罩蓋載置台2的上面 、側面或全面。並且，此罩構件4可形成環狀。罩構件4是 遮斷電漿與載置台2接觸，防止載置台2被濺射，可謀求防 止金屬等的雜質混入至晶圓W。罩構件4是例如以石英、 單結晶矽、多晶矽、非晶形矽、氮化矽等的材質所構成。 並且，構成罩構件4的上述材質是以鹼金屬、金屬等雜質 含量少的高純度者爲理想。 而且，在載置台2中埋入電阻加熱型的加熱器5。此加 -11 - 201207885 熱器5是藉由從加熱器電源5 a給電來加熱載置台2，而以其 熱來均一地加熱被處理體的晶圓W。 並且，在載置台2配備有熱電偶（TC) 6。利用此熱 電偶6來進行溫度計測，藉此可將晶圓W的加熱溫度控制 於例如室溫〜900°C的範圍。 並且，在載置台2設有在將晶圓W搬入至處理容器1內 時使用於晶圓W的交接之晶圓支撐銷（未圖示）。各晶圓 支撐銷是設成可對載置台2的表面突没。 在處理容器1的內壁面，由石英所構成的圓筒狀的襯 裡7會被設成覆蓋該內壁面。並且，在載置台2的外周側， 爲了在處理容器1內實現均一的排氣，而設置具有多數的 排氣孔8a之石英製環狀的擋板8。此擋板8是藉由複數的支 柱9所支撐。 在處理容器1的底壁la的大致中央部形成有圓形的開 口部10。在底壁la設有與此開口部10連通，朝下方突出的 排氣室〗1。在此排氣室11連接排氣管12，此排氣管12是被 連接至排氣裝置24。如此一來，構成可將處理容器1內真 空排氣。 處理容器1的上部是呈開口，在該開口的處理容器1的 上端配置具有開閉機能的蓋構件13。蓋構件13是形成中央 開口的框狀’其內周是環狀地設有階差（在圖1是2段的階 差）。蓋構件1 3是藉此階差朝內側（處理容器內空間）突 出’形成環狀（環狀）的支撐部13a。此蓋構件13與處理 容器1之間是經由密封構件1 4來氣密地密封。 -12- 201207885 在處理容器1的側壁lb設有用以在電漿處理裝置100與 鄰接的搬送室（未圖示）之間進行晶圓W的搬出入的搬出 入口 1 6、及開閉此搬出入口 1 6的閘閥1 7。 並且，在處理容器1的側壁lb設有形成環狀的氣體導 入部15。在氣體導入部15的內周面均等地形成有氣體吐出 孔。此氣體導入部15是被連接至供給電漿激發用氣體或氮 氣體的氣體供給裝置18。另外，氣體導入部15亦可設成噴 嘴狀或淋浴狀。 氣體供給裝置18是具有：氣體供給源、配管（例如氣 體路線20a、20b、20c )、流量控制裝置（例如質量流控 制器21a、21b)、及閥（例如開閉閥22a、22b)。作爲進 行氮化製程時的構成例，氣體供給源是例如具備稀有氣體 供給源19a、氮氣體供給源19b。氣體供給裝置18亦可具有 例如使用於置換處理容器1內環境時的淨化氣體供給源等 ，作爲上述以外未圖示的氣體供給源。另外，在將電漿處 理裝置100使用於電漿氧化處理時，可設置氧氣體供給源 〇 從稀有氣體供給源1 9a供給的稀有氣體，例如可使用 Ar氣體、Kr氣體、Xe氣體、He氣體等。該等之中，基於 經濟性佳的點，使用Ar氣體特別理想。在圖1是代表性地 圖示Ar氣體。從氮氣體供給源19b亦可取代氮氣體（N2 ) ，例如供給氨氣體（NH3 )等。另外，在將電漿處理裝置 1〇〇使用於電漿氧化處理時，亦可從氧氣體供給源供給例 如〇2氣體、03氣體、N02等。 -13- 201207885 稀有氣體及氮氣體是從氣體供給裝置18的稀有氣體供 給源1 9a、氮氣體供給源1 9b分別經由氣體路線（配管） 20a，20b來供給，在氣體路線20c中合流，從被連接至此 氣體路線2 0c的氣體導入部15來導入至處理容器1內。在連 接至各氣體供給源的各個氣體路線20a，2 Ob分別設有質量 流控制器21a，21b及其前後配備的一組開閉閥22a，22b。 可藉由如此的氣體供給裝置18的構成來進行所被供給的氣 體的切換或流量等的控制》 排氣裝置24是例如具備渦輪分子泵等的高速真空泵。 如上述般，排氣裝置24是經由排氣管12來連接至處理容器 1的排氣室11。處理容器1內的氣體是均一地流往排氣室11 的空間1 1 a內，更藉由使排氣裝置2 4作動，從空間1 1 a經由 排氣管12來往外部排氣。藉此，可將處理容器1內高速地 減壓至預定的真空度、例如0.13 3Pa。 其次，說明有關微波導入裝置27的構成。微波導入裝 置27的主要構成是具備：作爲微波透過板的介電質板28、 平面天線31、緩波材33、金屬製罩構件34、導波管37、匹 配電路3 8及微波產生裝置39。微波導入裝置27是導入電漿 (微波）至處理容器1內而使電漿生成的電漿生成手段》 具有使微波透過的機能之介電質板28是被配備於突出 至蓋構件13的內周側之支撐部13a上。介電質板28是例如 以石英 '陶瓷等的材質所構成。此介電質板28與蓋構件13 的支撐部1 3a之間，如後述般，隔著作爲密封構件的〇型環 2 9a來氣密地密封。因此，處理容器1內是被氣密地保持。 -14 - 201207885 第1實施形態是在此介電質板28與蓋構件13的支撐部13a之 間設置環狀的Ο型環29a的同時，設置後述的間隔件60 (在 圖1是省略圖示，參照圖4)。 平面天線31是在介電質板28之上（處理容器1的外側 )，設成與載置台2對向。平面天線31是呈圓板狀。另外 ，平面天線31的形狀並非限於圓板狀，例如亦可爲四角板 狀。此平面天線31是卡止於蓋構件13的上端。 平面天線31是例如以表面被鍍金或銀的銅板、鋁板、 鎳板及該等的合金等的導電性構件所構成。平面天線3 1是 具有放射微波的多數個縫隙狀的微波放射孔32。微波放射 孔3 2是以預定的圖案來貫通平面天線31而形成。 各個的微波放射孔3 2是例如圖2所示形成細長的長方 形狀（縫隙狀）。而且，典型鄰接的微波放射孔32會被配 置成「L」字狀。並且，如此組合成預定的形狀（例如L 字狀）而配置的微波放射孔32全體更配置成同心圓狀。微 波放射孔3 2的長度或配列間隔是按照微波的波長（Xg )來 決定。例如，微波放射孔32的間隔是配置成Xg/4〜Xg。在 圖2中是以△!·來表示形成同心圓狀之鄰接的微波放射孔32 彼此間的間隔。另外，微波放射孔32的形狀亦可爲圓形狀 、圓弧狀等其他的形狀。而且，微波放射孔32的配置形態 並無特別加以限定，除了同心圓狀以外，例如亦可配置成 螺旋狀、放射狀等。 在平面天線3 1的上面（形成於平面天線3 1與金屬製罩 構件34之間的偏平導波路）設置具有比真空更大的介電常 -15- 201207885 數的緩波材33»此緩波材33是因爲在真空中微波的波長會 變長，所以具有縮短微波的波長來調整電漿的機能。緩波 材33的材質是例如可使用石英、聚四氟乙烯樹脂、聚醯亞 胺樹脂等。另外，在平面天線31與介電質板28之間，且緩 波材3 3與平面天線3 1之間，可分別使接觸或離間，但最好 使接觸。 在處理容器1的上部設有金屬製罩構件34，而使能夠 覆蓋該等平面天線31及緩波材33。金屬製罩構件3 4是例如 藉由鋁或不鏽鋼等的金屬材料來構成。藉由金屬製罩構件 3 4及平面天線31來形成偏平導波路，可將微波均一地供給 至處理容器1內》蓋構件13的上端與金屬製罩構件34是藉 由密封構件35來密封。並且，在金屬製罩構件34的壁體的 內部形成有冷卻水流路34a。藉由使冷卻水通流於此冷卻 水流路34a，可冷卻金屬製罩構件34、緩波材33、平面天 線3 1及介電質板28。另外，平面天線3 1、金屬製罩構件3 4 是被接地》 在金屬製罩構件34的上壁（頂部）的中央形成有開口 部36，在此開口部36連接導波管37。在導波管3 7的另一端 側是經由匹配電路3 8來連接發生微波的微波產生裝置39。 導波管37是具有：從上述金屬製罩構件34的開口部36 往上方延伸之剖面圓形狀的同軸導波管3 7a、及在此同軸 導波管37a的上端部經由模式變換器40來連接之延伸於水 平方向的矩形導波管3 7b。模式變換器40是具有將以TE模 式來傳播於矩形導波管3 7b內的微波變換成TEM模式的機 -16- 201207885 能。 在同軸導波管37a的中心是有內導體41延伸著。此內 導體41是在其下端部連接固定於平面天線31的中心。藉由 如此的構造，微波是經由同軸導波管3 7a的內導體41來放 射狀效率佳均一地往藉由平面天線3 1所形成的偏平導波路 傳播。 藉由以上那樣構成的微波導入裝置27,在微波產生裝 置39發生的微波會經由導波管3 7來往平面天線31傳播，更 從微波放射孔32 (縫隙）經由介電質板28來導入至處理容 器1內。另外，微波的頻率是例如使用2.4 5 GHz爲理想，其 他亦可使用8.35GHz、1.98GHz等。 電漿處理裝置100的各構成部是形成被連接至控制部 50來控制的構成。 控制部50典型的是部電腦，例如圖3所示具有：具備 CPU的製程控制器51、及連接至此製程控制器51的使用者 介面52及記憶部53 »製程控制器51是在電漿處理裝置100 中統括控制例如與溫度、壓力、氣體流量、微波輸出等的 處理條件有關的各構成部（例如加熱器電源5a、氣體供給 裝置18、排氣裝置24、微波產生裝置3 9等）之控制手段。 使用者介面52具有：工程管理者爲了管理電漿處理裝 置100而進行指令的輸入操作等的鍵盤、及使電漿處理裝 置10 0的運轉狀況可視化顯示的顯示器等。並且，在記憶 部53中保存有記錄控制程式（軟體）或處理條件資料等的 處方，該控制程式（軟體）是用以在製程控制器5 1的控制 -17- 201207885 下實現被執行於電漿處理裝置100的各種處理者。 然後，因應所需，以來自使用者介面52的指示等，從 記憶部53叫出任意的處方，使執行於製程控制器5 1，在製 程控制器51的控制下，於電漿處理裝置100的處理容器1內 進行所望的處理。並且，上述控制程式及處理條件資料等 的處方可利用被儲存於電腦可讀取的記憶媒體、例如CD-ROM、硬碟、軟碟、快閃記憶體、DVD、藍光光碟等的狀 態者。又，亦可從其他的裝置例如經由專線來使上述處方 傳送利用。 如此構成的電漿處理裝置100可例如在室溫（25 °C程 度）以上600°C以下的低溫對晶圓W進行無損傷的電漿處 理。並且，電漿處理裝置1 〇〇因爲電漿的均一性佳，所以 即使對大口徑的晶圆W照樣可實現製程的均一性。 其次，說明有關利用RLS A方式的電漿處理裝置100之 電漿氮化處理的一般性程序。首先，打開閘閥17從搬出入 口 16將晶圓W搬入至處理容器1內，載置於載置台2上。其 次，一邊將處理容器1內予以減壓排氣，一邊從氣體供給 裝置18的稀有氣體供給源19 a及氮氣體供給源19 b以預定的 流量來將稀有氣體及氮氣體分別經由氣體導入部15導入至 處理容器1內。如此，將處理容器1內調節成預定的壓力。 其次，經由匹配電路3 8來引導在微波產生裝置39所發 生之預定頻率例如2.4 5 GHz的微波至導波管37。被引導至 導波管37的微波是依序通過矩形導波管37b及同軸導波管 37a，經由內導體41來供給至平面天線31。亦即，微波是 -18- 201207885 在矩形導波管37b內以TE模式傳播，此TE模式的微波是在 模式變換器40變換成ΤΕΜ模式，在同軸導波管37a內朝平 面天線31傳播而去。然後，微波會從被貫通形成於平面天 線3 1之縫隙狀的微波放射孔32經由介電質板28來放射至處 理容器1內晶圓W的上方空間。 藉由從平面天線31經由介電質板28來放射至處理容器 1內的微波，在處理容器1內形成電磁場，使稀有氣體及氮 氣體等的處理氣體電漿化。如此生成的微波激發電漿是藉 由微波從平面天線3 1的多數的微波放射孔3 2放射，以大略 1χ101()〜5xl012/cm3的高密度，且在晶圓W附近，成爲大 略1 .2eV以下的低電子溫度電漿。 在電漿處理裝置1 00所實施的電漿氮化處理的條件， 可當作處方來保存於控制部50的記憶部53。然後，製程控 制器51會讀出該處方來往電漿處理裝置1〇〇的各構成部、 例如氣體供給裝置1 8、排氣裝置24、微波產生裝置39、加 熱器電源5 a等送出控制信號，藉此實現所望條件的電漿氮 化處理。 其次’一邊參照圖面一邊說明有關本實施形態的電獎 處理裝置100的特徵部分的構成。圖4是擴大詳細顯示圖1 中以虛線所包圍的A部分的部分剖面圖。A部分是表示介 電質板28與蓋構件13的支撐部13 a的連接部分。又，圖5是 部分擴大詳細顯示從圖1中以虛線所包圍的A部分卸下介 電質板28的狀態之蓋構件13的支撐部13 a的上面之圖面。 本實施形態是在介電質板28與蓋構件13的支撐部13a -19- 201207885 之間配備環狀的〇型環29a，作爲用以密閉處理容器1內的 電漿處理空間來維持真空狀態的密封構件。並且，在Ο型 環29a的外周側，爲了在處理容器1上部的蓋構件13的支撐 部13a的上面與介電質板28之間形成上下方向的間隙d，而 配備剖面形狀爲正方形或長方形的環狀的間隔件60»在蓋 構件13的支撐部13a的上面，〇型環29a及間隔件60會分別 位於預定的安裝位置。在蓋構件13的支撐部13 a上面形成 有圓弧狀且具預定深度的安裝溝131，132，而使該等的設 置位置不會偏移。在安裝溝131，132中，將Ο型環2 9a及間 隔件60推壓嵌入而安裝。由於安裝溝131，132是上部窄， 下部寬之形狀的溝（蟻溝），所以Ο型環29a及間隔件60不 易脫落，安裝位置不會偏移。 間隔件60是具有在配置於處理容器1的上部的蓋構件 13的支撐部13a的上面與介電質板28之間形成間隙d的作用 。在蓋構件13的支撐部13a的上面與介電質板28的下面之 間藉由間隔件60來形成的間隙d是例如0.05〜0.4mm爲理想 。間隙d更理想是0.05〜0.2mm，最好是0.05〜0.08mm。藉 由將此間隙d設定於上述範圍內，在使處理容器1內形成高 真空狀態時，即使介電質板28的中央附近彎曲至下方，還 是可迴避介電質板28接觸於支撐部13a的角部13b。因此， 可防止支撐部13a的角部13b與介電質板28的接觸造成介電 質板28的破損或受傷或摩擦而產生微粒。 間隔件60是摩擦係數小爲理想，使蓋構件1 3或介電質 板28藉電漿的熱而熱膨脹時與介電質板28的抵接面的滑動-6-201207885 In the plasma processing apparatus of the present invention, the second sealing member is formed of a fluorine-based resin having higher plasma resistance than the first sealing member. Further, in the plasma processing apparatus of the present invention, the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, and the first portion is sealed by vacuum sealing. It is composed of two high-quality materials, and the second portion is preferably made of a material having higher plasma resistance than the first portion. Further, in the plasma processing apparatus of the present invention, the gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate may be in the range of 0.05 to 0.4 mm, more preferably 0.05. In the range of ~0.2 mm, it is preferably in the range of 0.05 to 0.08 mm. Further, in the plasma processing apparatus of the present invention, the interval between the spacer and the sealing member is in the range of 1 to 1 mm. Moreover, in the plasma processing apparatus of the present invention, a gap in the range of 0.1 to 1 mm is formed between the wall surface of the inner periphery of the cover member and the outer peripheral side wall of the dielectric plate. In this case, the dielectric plate can be positioned in the horizontal direction by the spacer. In the plasma processing method of the present invention, the object to be treated is processed by using a plasma processing apparatus, and the plasma processing apparatus is provided with: a processing container having a plasma processing space inside, and an upper opening; dielectric a plate that blocks an upper portion of the plasma processing space; a cover member disposed at an upper portion of the processing container and having an annular support portion that supports an outer peripheral portion of the dielectric plate; 201207885 sealing member a gap between the support portion and the dielectric plate for sealing the plasma processing space and a spacer disposed on an outer peripheral side of the sealing member, and the support portion and the dielectric plate A gap is formed between them. Further, a plasma processing apparatus according to another aspect of the present invention includes: a processing container having a plasma processing space therein and an upper opening; and a dielectric plate blocking the plasma processing space; a cover member disposed on an upper portion of the processing container and having an annular support portion that supports an outer peripheral portion of the dielectric plate; and a sealing member that is coupled to the support portion and the dielectric plate a gap for sealing the plasma processing space; a spacer disposed on an outer peripheral side of the sealing member, forming a gap between the support portion and the dielectric plate; and an observation window for identifying the Process the inside of the container. Further, the observation window has a transparent window member including a protruding portion that is inserted into an observation opening formed in a side wall of the processing container, and a fixing member that fixes the window member from the outside: a sealing member, It is hermetically sealed between the side wall of the processing container and the window member around the observation opening. Further, the inner surface of the observation opening and the surface of the protruding portion are formed with a gap in a range in which the protruding portion can be inserted into the observation opening, and the protruding portion is inserted into the above-mentioned protrusion portion -8 - 201207885 The observation opening is used to attach the window member to the side wall of the processing container. In this case, it is preferable that the front end surface of the protruding portion is formed by bending the shape of the inner wall surface of the side wall of the processing container. Further, it is preferable that the distance between the surface of the protruding portion and the inner surface of the observation opening portion is in the range of 0.1 mm to 2 mm. According to the plasma processing apparatus and the plasma processing method of the present invention, a sealing member for sealing the plasma processing space is provided between the support portion of the processing container and the dielectric plate, and is provided on the outer peripheral side of the sealing member. A spacer is formed with a gap between the support portion and the dielectric plate. Therefore, even if the support portion or the dielectric plate is thermally expanded by the plasma irradiation in the processing container, a gap can be formed between the support portion and the dielectric plate by the spacer to prevent the support portion from rubbing against the dielectric plate. Moreover, it is possible to prevent the dielectric plate from being damaged or rubbed to cause the occurrence of particles. [Embodiment] [First Embodiment] Hereinafter, an embodiment of a plasma processing apparatus according to the present invention will be described in detail with reference to the drawings. First, the configuration of a plasma processing apparatus according to a first embodiment of the present invention will be described with reference to Figs. Fig. 1 is a cross-sectional view schematically showing a schematic configuration of a plasma processing apparatus 100. 2 is a plan view showing a planar antenna of the plasma processing apparatus 100 of FIG. 1, and FIG. 3 is a view showing a configuration of a control system of the plasma processing apparatus 1A. The plasma processing apparatus 100 directly introduces microwaves into the processing container by, for example, a -9-¢. 201207885 planar antenna having a plurality of slit-like holes, particularly a RLSA (radiial line Slot Antenna). The plasma is produced in a processing vessel, thereby forming an RLS A microwave plasma processing apparatus that produces a high density and low electron temperature microwave excited plasma. In the plasma processing apparatus 100, it is possible to treat a plasma having a plasma density of 1 χ 10 | (1 to 5 x 10 12 /cm 3 and a low electron temperature of 0.7 to 2 eV. Therefore, the plasma processing apparatus 100 can be suitably used in various types. In the manufacturing process of a semiconductor device, for example, nitriding treatment or oxidizing treatment to form a tantalum nitride film (SiN film) or a yttrium oxide film. Moreover, the plasma processing device 100 is also suitable for being formed by plasma. The purpose of the CVD film or the plasma etching of the tantalum or the tantalum oxide film is as follows. In the present embodiment, the plasma processing apparatus 100 will be described as an example for the purpose of performing plasma nitriding treatment on the object to be processed. The main configuration of the device 100 includes a processing container 1 that houses a semiconductor wafer (hereinafter referred to as a "wafer") W as a substrate of a target object, and a mounting table 2 that mounts the wafer in the processing container 1. W; a cover member 13 having a function of opening and closing the processing container 1 while supporting a dielectric plate; a gas introduction portion 15 connected to the gas supply device 18, introducing a gas into the processing container 1; , its use The inside of the processing container 1 is evacuated and evacuated to the microwave introducing device 27, which is attached to the upper portion of the processing container 1, and introduces microwaves into the processing container 1 as a plasma generating means for generating plasma; and -10-201207885 The control unit 50 controls the respective components of the plasma processing apparatus 100. The gas supply device 18 may be included in the constituent portion of the plasma processing apparatus 100 or may be included in the constituent portion, and the external gas supply device may be connected to The gas introduction unit 15 is configured to be used. The processing container 1 is formed by a substantially cylindrical container that is grounded. The processing container 1 can also be formed by a rectangular tube-shaped container. The processing container 1 is an upper opening. A bottom wall 1a and a side wall 1b made of a material such as aluminum are provided. The mounting table 2 is provided inside the processing container 1 to mount the wafer W on the object to be processed horizontally. The mounting table 2 is, for example, by AIN. In particular, it is preferable to use a material having high thermal conductivity, for example, A1N. The mounting table 2 is a cylindrical support member 3 that extends from the center of the bottom of the exhaust chamber 11 to the upper side. Support The support member 3 is made of, for example, ceramics such as A1N. Further, the mounting table 2 is provided with a cover member 4 for covering the outer edge portion or the entire surface thereof and guiding the wafer W. The cover member 4 is a cover. The cover member 4 can be formed in a ring shape. The cover member 4 blocks the plasma from coming into contact with the mounting table 2, prevents the mounting table 2 from being sputtered, and prevents impurities such as metal. The cover member 4 is made of, for example, a material such as quartz, single crystal germanium, polycrystalline germanium, amorphous germanium or tantalum nitride. The material constituting the cover member 4 is an alkali metal or a metal. It is preferable that the high purity is small, and the resistance heating type heater 5 is embedded in the mounting table 2. This addition -11 - 201207885 is to heat the stage 2 by supplying power from the heater power source 5 a, and uniformly heat the wafer W of the object to be processed by the heat thereof. Further, a thermocouple (TC) 6 is provided on the mounting table 2. The thermometer is used to measure the temperature of the wafer W, whereby the heating temperature of the wafer W can be controlled, for example, in the range of room temperature to 900 °C. Further, the mounting table 2 is provided with a wafer supporting pin (not shown) for transferring the wafer W when the wafer W is carried into the processing container 1. Each of the wafer support pins is provided so as to protrude from the surface of the mounting table 2. On the inner wall surface of the processing container 1, a cylindrical lining 7 made of quartz is provided to cover the inner wall surface. Further, on the outer peripheral side of the mounting table 2, in order to achieve uniform exhaust in the processing container 1, a quartz-shaped annular baffle 8 having a plurality of exhaust holes 8a is provided. This baffle 8 is supported by a plurality of struts 9. A circular opening portion 10 is formed at a substantially central portion of the bottom wall 1a of the processing container 1. The bottom wall la is provided with an exhaust chamber 1 that communicates with the opening 10 and protrudes downward. The exhaust chamber 11 is connected to the exhaust pipe 12, which is connected to the exhaust unit 24. In this way, the configuration can evacuate the inside of the processing container 1. The upper portion of the processing container 1 is an opening, and a lid member 13 having an opening and closing function is disposed at the upper end of the processing container 1 of the opening. The cover member 13 has a frame shape in which a central opening is formed, and its inner circumference is annularly provided with a step (a step of two stages in Fig. 1). The cover member 13 is a support portion 13a which is formed in a ring shape by forming a ring shape toward the inner side (the space inside the processing container). The cover member 13 and the processing container 1 are hermetically sealed via a sealing member 14. -12-201207885 The side wall 1b of the processing container 1 is provided with a carry-out port 16 for carrying in and out of the wafer W between the plasma processing apparatus 100 and an adjacent transfer chamber (not shown), and opening and closing the carry-in port 1 6 gate valve 1 7. Further, a gas guiding portion 15 which is formed in a ring shape is provided in the side wall 1b of the processing container 1. A gas discharge hole is formed uniformly on the inner circumferential surface of the gas introduction portion 15. This gas introduction portion 15 is connected to a gas supply device 18 that supplies a plasma excitation gas or a nitrogen gas. Further, the gas introduction portion 15 may be formed in a nozzle shape or a shower shape. The gas supply device 18 includes a gas supply source, piping (e.g., gas passages 20a, 20b, and 20c), flow rate control devices (e.g., mass flow controllers 21a and 21b), and valves (for example, opening and closing valves 22a and 22b). As a configuration example in the case of performing the nitridation process, the gas supply source includes, for example, a rare gas supply source 19a and a nitrogen gas supply source 19b. The gas supply device 18 may have, for example, a purge gas supply source used in the environment in which the processing container 1 is replaced, and may be a gas supply source (not shown). Further, when the plasma processing apparatus 100 is used for plasma oxidation treatment, a rare gas supplied from the rare gas supply source 19a may be provided as an oxygen gas supply source, and for example, Ar gas, Kr gas, Xe gas, He gas may be used. Wait. Among these, it is particularly desirable to use Ar gas based on economical points. In Fig. 1, an Ar gas is representatively illustrated. The nitrogen gas supply source 19b may be substituted for the nitrogen gas (N2), for example, ammonia gas (NH3) or the like. Further, when the plasma processing apparatus 1 is used for plasma oxidation treatment, for example, 〇2 gas, 03 gas, N02, or the like may be supplied from an oxygen gas supply source. -13-201207885 The rare gas and nitrogen gas are supplied from the rare gas supply source 19a of the gas supply device 18, and the nitrogen gas supply source 19b is supplied via the gas path (pipe) 20a, 20b, respectively, and merges in the gas path 20c. The gas introduction unit 15 connected to the gas path 20c is introduced into the processing container 1. Each of the gas paths 20a, 2Bb connected to each gas supply source is provided with a mass flow controller 21a, 21b and a set of on-off valves 22a, 22b provided in front and rear. The switching of the supplied gas or the control of the flow rate or the like can be performed by the configuration of the gas supply device 18. The exhaust device 24 is, for example, a high-speed vacuum pump including a turbo molecular pump or the like. As described above, the exhaust device 24 is connected to the exhaust chamber 11 of the processing container 1 via the exhaust pipe 12. The gas in the processing container 1 flows uniformly into the space 11a of the exhaust chamber 11, and is further exhausted from the space 1 1a through the exhaust pipe 12 by actuating the exhaust device 24. Thereby, the inside of the processing container 1 can be depressurized at a high speed to a predetermined degree of vacuum, for example, 0.13 3 Pa. Next, the configuration of the microwave introducing device 27 will be described. The main structure of the microwave introducing device 27 includes a dielectric plate 28 as a microwave transmitting plate, a planar antenna 31, a retarding material 33, a metal cover member 34, a waveguide 37, a matching circuit 38, and a microwave generating device 39. . The microwave introducing device 27 is a plasma generating means for introducing plasma (microwave) into the processing container 1 to generate plasma. The dielectric plate 28 having a function of transmitting microwaves is provided to protrude into the cover member 13. On the support portion 13a on the circumference side. The dielectric material plate 28 is made of, for example, a material such as quartz 'ceramic. The dielectric plate 28 and the support portion 13a of the cover member 13 are hermetically sealed between the support members 13a of the cover member 13 as will be described later. Therefore, the inside of the processing container 1 is airtightly held. -14 - 201207885 In the first embodiment, an annular Ο-ring 29a is provided between the dielectric plate 28 and the support portion 13a of the cover member 13, and a spacer 60 (to be described later) is provided. Show, refer to Figure 4). The planar antenna 31 is on the dielectric plate 28 (outside of the processing container 1) and is disposed to face the mounting table 2. The planar antenna 31 has a disk shape. Further, the shape of the planar antenna 31 is not limited to a disk shape, and may be, for example, a square plate shape. This planar antenna 31 is locked to the upper end of the cover member 13. The planar antenna 31 is made of, for example, a conductive member such as a copper plate whose surface is plated with gold or silver, an aluminum plate, a nickel plate, or the like. The planar antenna 31 is a plurality of slit-shaped microwave radiation holes 32 that radiate microwaves. The microwave radiation holes 32 are formed by penetrating the planar antenna 31 in a predetermined pattern. Each of the microwave radiation holes 32 is formed into an elongated rectangular shape (slit shape) as shown in Fig. 2, for example. Further, the typical adjacent microwave radiation holes 32 are arranged in an "L" shape. Further, the entire microwave radiation holes 32 arranged in a predetermined shape (for example, an L shape) are arranged in a concentric shape. The length or arrangement interval of the microwave radiation holes 32 is determined in accordance with the wavelength (Xg) of the microwave. For example, the interval between the microwave radiation holes 32 is set to be Xg/4 to Xg. In Fig. 2, the interval between the adjacent microwave radiation holes 32 formed in a concentric shape is indicated by Δ!. Further, the shape of the microwave radiation holes 32 may be other shapes such as a circular shape or an arc shape. Further, the arrangement of the microwave radiation holes 32 is not particularly limited, and may be arranged in a spiral shape or a radial shape, for example, in addition to concentric shapes. On the upper surface of the planar antenna 3 1 (the flat waveguide formed between the planar antenna 31 and the metal cover member 34), a retardation material 33 having a dielectric constant of -15-201207885 is provided, which is larger than the vacuum. Since the wave material 33 has a long wavelength of microwaves in a vacuum, it has a function of shortening the wavelength of the microwave to adjust the plasma. The material of the slow-wave material 33 is, for example, quartz, polytetrafluoroethylene resin, or polyimide resin. Further, between the planar antenna 31 and the dielectric plate 28, and between the buffer member 33 and the planar antenna 31, contact or separation may be performed, but it is preferable to make contact. A metal cover member 34 is provided on the upper portion of the processing container 1, so that the planar antenna 31 and the slow-wave material 33 can be covered. The metal cover member 34 is made of, for example, a metal material such as aluminum or stainless steel. By forming the flat waveguide by the metal cover member 34 and the planar antenna 31, microwaves can be uniformly supplied into the processing container 1 and the upper end of the cover member 13 and the metal cover member 34 are sealed by the sealing member 35. Further, a cooling water flow path 34a is formed inside the wall of the metal cover member 34. The metal cover member 34, the retardation member 33, the planar antenna 3, and the dielectric plate 28 can be cooled by passing the cooling water through the cooling water passage 34a. Further, the planar antenna 3 1 and the metal cover member 34 are grounded. An opening 36 is formed in the center of the upper wall (top) of the metal cover member 34, and the waveguide 36 is connected to the opening 36. On the other end side of the waveguide 37, a microwave generating device 39 that generates microwaves is connected via a matching circuit 38. The waveguide 37 has a coaxial coaxial waveguide 37a extending in a circular shape extending upward from the opening 36 of the metal cover member 34, and an upper end portion of the coaxial waveguide 37a via the mode converter 40. A rectangular waveguide 3 7b extending in the horizontal direction is connected. The mode converter 40 is a machine having a mode of converting the microwave propagating in the rectangular waveguide 34b in the TE mode into the TEM mode -16-201207885. In the center of the coaxial waveguide 37a, an inner conductor 41 extends. This inner conductor 41 is connected and fixed to the center of the planar antenna 31 at its lower end portion. With such a configuration, the microwaves are uniformly radiated through the inner conductor 41 of the coaxial waveguide 37a to uniformly propagate toward the flat waveguide formed by the planar antenna 31. According to the microwave introducing device 27 configured as described above, the microwave generated in the microwave generating device 39 propagates through the waveguide 37 to the planar antenna 31, and is further introduced from the microwave radiation hole 32 (slit) to the dielectric plate 28 via the dielectric plate 28. Processing inside the container 1. Further, the frequency of the microwave is ideally used, for example, at 2.4 5 GHz, and other uses of 8.35 GHz, 1.98 GHz, and the like. Each component of the plasma processing apparatus 100 is configured to be connected to the control unit 50 for control. The control unit 50 is typically a computer. For example, as shown in FIG. 3, a process controller 51 having a CPU, a user interface 52 connected to the process controller 51, and a memory unit 53 are included in the plasma processing. The device 100 collectively controls, for example, each component (for example, the heater power source 5a, the gas supply device 18, the exhaust device 24, the microwave generating device 39, etc.) related to processing conditions such as temperature, pressure, gas flow rate, and microwave output. Control means. The user interface 52 includes a keyboard for inputting an instruction or the like for managing the plasma processing apparatus 100, and a display for visually displaying the operation state of the plasma processing apparatus 100. Further, the storage unit 53 stores a prescription for recording a control program (software) or processing condition data, and the control program (software) is used to be executed under the control of the process controller 51 1 - 201207885. Various processors of the slurry processing apparatus 100. Then, in response to an instruction from the user interface 52, an arbitrary prescription is called from the memory unit 53 to be executed by the process controller 51, under the control of the process controller 51, in the plasma processing apparatus 100. The desired processing is performed in the processing container 1. Further, the prescriptions of the control program, the processing condition data, and the like can be stored in a computer-readable memory medium such as a CD-ROM, a hard disk, a floppy disk, a flash memory, a DVD, a Blu-ray disk, or the like. Further, the above prescriptions may be transferred and used from other devices, for example, via a dedicated line. The plasma processing apparatus 100 configured as described above can perform plasma-free plasma treatment on the wafer W at a low temperature of, for example, room temperature (25 °C) or more and 600 °C or lower. Further, since the plasma processing apparatus 1 is excellent in the uniformity of the plasma, the uniformity of the process can be achieved even with the large-diameter wafer W. Next, a general procedure for plasma nitriding treatment of the plasma processing apparatus 100 using the RLS A method will be described. First, the gate valve 17 is opened and the wafer W is carried into the processing container 1 from the carry-in/out port 16, and is placed on the mounting table 2. Then, the rare gas and the nitrogen gas are respectively supplied from the rare gas supply source 19a and the nitrogen gas supply source 19b of the gas supply device 18 to the rare gas and the nitrogen gas through the gas introduction portion at a predetermined flow rate while the inside of the processing container 1 is evacuated. 15 is introduced into the processing container 1. Thus, the inside of the processing container 1 is adjusted to a predetermined pressure. Next, microwaves of a predetermined frequency, e.g., 2.4 5 GHz, generated at the microwave generating device 39 are guided to the waveguide 37 via the matching circuit 38. The microwave guided to the waveguide 37 is sequentially supplied to the planar antenna 31 via the inner conductor 41 through the rectangular waveguide 37b and the coaxial waveguide 37a. That is, the microwave is -18-201207885 propagated in the TE mode in the rectangular waveguide 37b, and the TE mode microwave is converted into the ΤΕΜ mode by the mode converter 40, and propagates toward the planar antenna 31 in the coaxial waveguide 37a. go with. Then, the microwaves are radiated from the microwave radiation holes 32 formed through the slits formed in the planar antenna 31 through the dielectric plate 28 to the space above the wafer W in the processing container 1. By radiating the microwaves into the processing container 1 from the planar antenna 31 via the dielectric plate 28, an electromagnetic field is formed in the processing container 1, and the processing gas such as rare gas or nitrogen gas is plasma-plasmaized. The microwave-excited plasma thus generated is radiated from a plurality of microwave radiation holes 32 of the planar antenna 31 by microwaves, and has a high density of approximately 1 χ 101 () to 5 x 10 12 /cm 3 , and is approximately 1 in the vicinity of the wafer W. Low electron temperature plasma below 2eV. The conditions of the plasma nitriding treatment performed by the plasma processing apparatus 100 can be stored in the memory unit 53 of the control unit 50 as a prescription. Then, the process controller 51 reads out the prescription and sends control signals to the respective components of the plasma processing apparatus 1 such as the gas supply device 18, the exhaust device 24, the microwave generating device 39, the heater power source 5a, and the like. Thereby, the plasma nitriding treatment of the desired conditions is achieved. Next, the configuration of the characteristic portion of the electric prize processing device 100 according to the present embodiment will be described with reference to the drawings. Fig. 4 is a partial cross-sectional view showing an enlarged portion A of Fig. 1 surrounded by a broken line. The portion A is a connecting portion indicating the dielectric plate 28 and the support portion 13a of the cover member 13. Further, Fig. 5 is a partially enlarged plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric plate 28 is removed from the portion A surrounded by a broken line in Fig. 1. In the present embodiment, an annular 〇-shaped ring 29a is provided between the dielectric plate 28 and the support portion 13a -19-201207885 of the cover member 13 as a plasma processing space for sealing the processing container 1 to maintain the vacuum state. Sealing member. Further, on the outer peripheral side of the Ο-shaped ring 29a, a vertical or horizontal gap d is formed between the upper surface of the support portion 13a of the cover member 13 on the upper portion of the processing container 1 and the dielectric plate 28, and the cross-sectional shape is square or rectangular. The annular spacer 60» is above the support portion 13a of the cover member 13, and the 〇-shaped ring 29a and the spacer 60 are respectively located at predetermined mounting positions. Mounting grooves 131, 132 having an arc shape and having a predetermined depth are formed on the support portion 13a of the cover member 13, so that the positions of the devices are not shifted. In the mounting grooves 131, 132, the Ο-shaped ring 29a and the spacer 60 are press-fitted and mounted. Since the mounting grooves 131 and 132 are grooves (ant grooves) having a narrow upper portion and a wide lower portion, the Ο-shaped ring 29a and the spacer 60 are not easily detached, and the mounting position is not displaced. The spacer 60 has a function of forming a gap d between the upper surface of the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric plate 28. The gap d formed by the spacer 60 between the upper surface of the support portion 13a of the cover member 13 and the lower surface of the dielectric plate 28 is preferably 0.05 to 0.4 mm, for example. The gap d is more preferably 0.05 to 0.2 mm, more preferably 0.05 to 0.08 mm. By setting the gap d within the above range, when the high vacuum state is formed in the processing container 1, even if the vicinity of the center of the dielectric plate 28 is bent downward, the dielectric plate 28 can be prevented from contacting the support portion 13a. Corner 13b. Therefore, it is possible to prevent the contact between the corner portion 13b of the support portion 13a and the dielectric plate 28 from causing damage or damage or friction of the dielectric plate 28 to generate fine particles. The spacer 60 is preferably a small coefficient of friction, and the sliding of the cover member 13 or the dielectric plate 28 against the abutting surface of the dielectric plate 28 when thermally expanded by the heat of the plasma is used.

S -20- 201207885 會變佳。並且，在電漿處理裝置100中，因爲使用微波， 所以間隔件60是由介電損耗角正切（tans )小的材料所構 成，或在彈性構件的表面塗佈tanS小的材料者爲理想。而 且’間隔件60是彈性率（楊式模數）比〇型環2 93大的材料 爲理想。例如，間隔件60的楊式模數是200〜5 00kgf/mm2 的範圍內爲理想。間隔件60的構成材料的tanS是例如 0.00001〜0.0034的範圍內爲理想。tar^爲上述範圍內的材 料，例如可舉聚醯亞胺系樹脂、聚四氟乙烯等的氟系樹脂 。在此，使用聚醯亞胺系樹脂時，楊式模數是例如320〜 3 5(^£以1111112的範圍內者爲理想。另外，蓋構件13的支撐部 13a爲銘等所構成時，熱膨張率是約23><1〇·6，另一方面， 介電質板28爲石英材料所形成時，熱膨脹率是約〇.6xl〇-6 。因此’比起介電質板28，蓋構件13的支撐部13a是熱膨 脹率較大。因爲如此蓋構件13與介電質板28的熱膨脹率的 差異’蓋構件13與介電質板28的摩擦、接觸等所造成微粒 的發生或介電質板28的破損等會成爲問題，但本實施形態 的電漿處理裝置100是藉由間隔件60來使間隙d形成於〇.〇5 〜0.4mm的範圍內爲理想，更理想是〇.〇5〜〇.2mm的範圍 內’最好是〇.〇5〜0.08mm的範圍內，藉此可防止該問題。 〇型環29 a爲了在介電質板28與蓋構件13的支撐部13a 之間密閉處理容器1內的電漿處理空間，最好是由真空密 封性高的氟系樹脂材料所形成，或該氟系樹脂材料被塗佈 於彈性材料的表面者。例如，由在介電質板28與蓋構件13 的支撐部13a之間確保充分的密封性的觀點來看，〇型環 -21 - 201207885 29 a是使用蕭氏（Shore) A硬度爲60〜80的材質爲理想。 並且，考量介電質板28的熱膨脹’在蓋構件13的內周 的壁面13c與介電質板28的外周端的壁面28a之間的水平方 向的間隙L 1是例如0.1〜1 mm的範圍內爲理想。藉此，可 防止介電質板28與蓋構件13的接觸’防止介電質板的破損 。另外，由於蓋構件13的熱膨脹率比介電質板28高’因此 水平方向的間隙L 1可幾乎爲零（亦即抵接的狀態）’但最 好確保電質板28不會勉強收於蓋構件13的支撐部13 a的程 度之間隔。 而且，由確保支撐部1 3 a的強度的觀點來看，間隔件 60的內周端與Ο型環29a的外周端的間隔L2是例如1〜10mm 的範圍內爲理想。另外，在圖4中，亦可將間隔件60配備 於比介電質板28的外周端的壁面28a還靠內周側（Ο型環 29a側）。 如以上般，電漿處理裝置1〇〇是在介電質板28與蓋構 件13的支撐部13a之間設置用以密閉處理容器1內的電漿處 理空間的0型環29a，更在該0型環29a的外周側設置間隔 件60。藉由此間隔件60在蓋構件13與介電質板28之間使間 隙d形成於0.05〜0.4mm的範圍內爲理想，更理想是〇.〇5〜 0.2mm的範圍內，最好是0.05〜0.08mm的範圍內。藉由此 間隙d，即使蓋構件13或介電質板28因爲處理容器1內所生 成的電漿的熱而熱膨脹，或介電質板28因爲真空而彎曲至 下方，還是可防止蓋構件13與介電質板28接觸、摩擦。因 此，可防止介電質板28破損或摩擦而產生微粒。S -20- 201207885 will be better. Further, in the plasma processing apparatus 100, since the microwave is used, the spacer 60 is preferably made of a material having a small dielectric loss tangent or a material having a small tanS applied to the surface of the elastic member. Further, the spacer 60 is preferably a material having a modulus of elasticity (Yang modulus) larger than that of the 〇-ring 2 93. For example, it is preferable that the Young's modulus of the spacer 60 is in the range of 200 to 500 kgf/mm2. The tanS of the constituent material of the spacer 60 is preferably in the range of, for example, 0.00001 to 0.0034. The tar is a material in the above range, and examples thereof include a fluorine-based resin such as a polyimide resin or a polytetrafluoroethylene. Here, when the polyimine-based resin is used, the Young's modulus is, for example, 320 to 3 5 (preferably in the range of 1111112. Further, when the support portion 13a of the lid member 13 is composed of Ming, etc., heat is used. The expansion ratio is about 23><1〇·6, and on the other hand, when the dielectric material plate 28 is formed of a quartz material, the coefficient of thermal expansion is about 66xl〇-6. Therefore, 'compared to the dielectric plate 28, The support portion 13a of the cover member 13 has a large coefficient of thermal expansion. Because of the difference in the coefficient of thermal expansion of the cover member 13 and the dielectric plate 28, the occurrence of particles caused by friction, contact, etc. of the cover member 13 and the dielectric plate 28 or The damage of the dielectric material plate 28 or the like may be a problem. However, it is preferable that the plasma processing apparatus 100 of the present embodiment has the gap d formed in the range of 〇. 5 to 0.4 mm by the spacer 60. 〇.〇5~〇.2mm in the range of 'preferably 〇.〇5~0.08mm, thereby preventing this problem. The 〇-type ring 29a is for the dielectric plate 28 and the cover member 13 The plasma processing space in the processing container 1 is sealed between the support portions 13a, and is preferably formed of a fluorine-based resin material having high vacuum sealing property. Or the fluorine-based resin material is applied to the surface of the elastic material. For example, from the viewpoint of ensuring sufficient sealing property between the dielectric sheet 28 and the support portion 13a of the cover member 13, the 〇-ring 21 - 201207885 29 a is preferably a material having a Shore A hardness of 60 to 80. Further, the thermal expansion of the dielectric plate 28 is considered to be on the inner wall surface 13c of the cover member 13 and the dielectric plate 28. It is preferable that the horizontal gap L1 between the wall faces 28a at the outer peripheral end is in the range of, for example, 0.1 to 1 mm. Thereby, the contact of the dielectric plate 28 with the cover member 13 can be prevented to prevent breakage of the dielectric plate. In addition, since the thermal expansion coefficient of the cover member 13 is higher than that of the dielectric plate 28, the gap L 1 in the horizontal direction may be almost zero (that is, in a state of abutment), but it is preferable to ensure that the electric plate 28 does not reluctantly close. The interval of the support portion 13a of the cover member 13. The distance L2 between the inner peripheral end of the spacer 60 and the outer peripheral end of the Ο-shaped ring 29a is, for example, 1~ from the viewpoint of ensuring the strength of the support portion 13a. Ideally in the range of 10mm. In addition, in Figure 4, the spacer 60 can also be equipped. The wall surface 28a of the outer peripheral end of the dielectric plate 28 is also on the inner peripheral side (the side of the Ο-ring 29a). As described above, the plasma processing apparatus 1 is at the support portion of the dielectric plate 28 and the cover member 13. A 0-ring 29a for sealing the plasma processing space in the processing container 1 is disposed between the 13a, and a spacer 60 is further provided on the outer peripheral side of the 0-ring 29a. Thereby, the spacer 60 is in the cover member 13 and the dielectric It is preferable that the gaps d are formed in the range of 0.05 to 0.4 mm between the plates 28, more preferably in the range of 〇. 5 to 0.2 mm, and more preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the heat of the plasma generated in the processing container 1, or the dielectric plate 28 is bent downward due to the vacuum, the cover member 13 can be prevented. Contact and friction with the dielectric plate 28. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbed to generate fine particles.

S -22- 201207885 [第2實施形態] 其次，參照圖6及圖7說明有關本發明的第2實施形態 的電漿處理裝置。第2實施形態的電漿處理裝置與第1實施 形態的電漿處理裝置的不同是僅介電質板28與蓋構件13的 支撐部13a之間的密封構造。因此，與第1實施形態的電漿 處理裝置同一構成部分的說明省略，只說明有關第2實施 形態的電漿處理裝置中特徵的密封構造。 圖6是擴大詳細顯示第2實施形態的電漿處理裝置的介 電質板28與蓋構件13的支撐部13 a的連接部分（亦即對應 於圖1的A部的部分）之部分剖面圖。又，圖7是部分擴大 詳細顯示將第2實施形態的電漿處理裝置的介電質板28卸 下的狀態之蓋構件13的支撐部13a的上面之圖面。 在圖6、圖7中，第2實施形態是與第1實施形態同樣， 在介電質板28與蓋構件13的支撐部13 a之間設置環狀的0型 環29a ’作爲用以密閉處理容器1內的電漿處理空間的第1 密封構件。並且，在該0型環29a的外周側，爲了在配置於 處理容器1的上部的蓋構件13的支撐部13 a與介電霣板28之 間形成間隙d，而設置間隔件6 0。間隔件6 0是由彈性率比 環狀的0型環29a大的材質所構成。而且，本實施形態更如 圖6，圖7所示，在比環狀的〇型環2 9a還靠內周側設置作爲 第2密封構件的〇型環29b。亦即，在蓋構件13的支撐部13a 的上面’在Ο型環29a的安裝溝131的內周側形成有用以安 裝Ο型環29b的安裝溝133，在該安裝溝133推嵌Ο型環29b -23- 201207885 而安裝。安裝溝133是上部窄，下部寬之形狀的溝（蟻溝 )，所以0型環29b不易脫落。 另外，Ο型環29a的內周端與〇型環29b的外周端之間 隔L3’由確保支撐部13a的強度的觀點來看，例如1.5〜 50mm的範圍內爲理想。 在此’ 0型環29b是位於比0型環29a還靠內周側，容 易受電漿照射。因此，最好Ο型環29b是藉由耐電漿性比〇 型環29a高的氟系樹脂材料等的材質所構成，或藉由耐電 漿性比〇型環2 9a高的氟系樹脂材料等的材質來塗佈彈性構 件而構成。並且，因爲真空密封是藉由Ο型環2 9a來進行， 因此〇型環29b亦可爲真空密封性比Ο型環29a低的材料。 在此，〇型環29a與Ο型環29b的材質之具體的組合是例如 藉由真空密封性佳的Du Pont公司製的Viton® (註冊商標 )等的氟橡膠等來形成Ο型環29a，藉由耐電漿性比Ο型環 29a高的Du Pont公司製的Kalrez® (註冊商標）或矽、氟 系樹脂等來形成Ο型環29b爲理想。 本實施形態是設置真空密封性高的〇型環29a作爲第1 密封構件的同時，設置耐電漿性高的〇型環29b作爲第2密 封構件之內外雙重的0型環構造，藉由〇型環29b可防止〇 型環29a因爲電漿而劣化。所以，可長期間保持利用Ο型環 29a之處理容器1內的真空密封性。又，由於可延長消耗品 的0型環2 9a的更換等的維修時期，因此裝置運轉期間會變 長，可使生產性提升。 如以上般，第2實施形態的電漿處理裝置與第1實施形 -24- 201207885 態的電漿處理裝置100同樣，藉由間隔件60在蓋構件13與 介電質板28之間間隙d是形成於0.05〜0.4mm的範圍內爲理 想，更理想是0.05〜0.2mm的範圍內，最好是0.05〜 0.08mm的範圍內。藉由此間隙d，即使蓋構件13或介電質 板28因爲處理容器1內所生成的電漿的熱而熱膨脹，或介 電質板28因爲真空而彎曲至下方，還是可防止蓋構件13與 介電質板28接觸、摩擦。因此，可防止介電質板28破損， 或與蓋構件13的摩擦造成微粒的發生。 並且，在本實施形態的電漿處理裝置中，藉由作爲第 1密封構件之真空密封性高的〇型環29a及作爲第2密封構件 之耐電漿性高的〇型環2 9b的雙重Ο型環構造，可防止電漿 照射造成〇型環29a的劣化，長期間保持處理容器1內的真 空密封狀態。由其本實施形態是藉由間隔件60在蓋構件1 3 與介電質板2 8之間形成間隙d，所以電漿容易侵入至此間 隙d。因此，可藉由耐電漿性高的Ο型環29b來阻擋侵入至 間隙d的電漿。 如此，本實施形態的電漿處理裝置是從外側往內側（ 真空側）依序配備間隔件60、作爲第1密封構件的〇型環 29a、及作爲第2密封構件的0型環29b。藉由此構成’可一 面防止介電質板28與蓋構件13的接觸造成破損或微粒的發 生，一面防止〇型環29a的劣化，長期間確保真空密封性。 本實施形態的其他的構成及效果是與第1實施形態同 樣。 -25- 201207885 [第3實施形態] 其次，說明有關第3實施形態的電漿處理裝置。與第1 及第2實施形態的電漿處理裝置不同是僅介電質板28與蓋 構件1 3的支撐部1 3 a之間的間隔件的構造，因此與第1及第 2實施形態同一構成部分的說明省略，只說明有關第3實施 形態的電漿處理裝置中特徵的間隔件的構成》 圖8是部分地擴大詳細顯示第3實施形態的電漿處理裝 置之卸下介電質板28的狀態之蓋構件13的支撐部13a的上 面的圖面。如圖8所示，第3實施形態與第1實施形態同樣 ，在介電質板28與蓋構件13的支撐部13a之間設置用以密 封處理容器1內的電漿處理空間之作爲第1密封構件的環狀 的0型環29a。並且，在該0型環29a的外周側，爲了在配 置於處理容器1的上部的蓋構件13的支撐部13a與介電質板 2 8之間形成間隙d，而斷續性地設置形成複數的間隔件 60A，60A，.…。因此，在本實施形態的蓋構件13的支撐 部13a的上面是斷績性地形成安裝溝132A，132A，.··， 而使能夠斷續性地配置複數的間隔件60A，60A，· · ·。 本實施形態的電漿處理裝置與上述第1及第2實施形態 的電漿處理裝置同樣，藉由間隔件60A在蓋構件13的支撐 部1 3 a與介電質板2 8之間形成間隙d (在圖8未圖示）。間 隙d是0.05〜0.4mm的範圍內爲理想，更理想是0.05〜 0.2mm的範圍內，最好是0.05〜0.08mm的範圍內。藉由此 間隙d，即使蓋構件13或介電質板28因爲處理容器1內的電 漿照射而熱膨脹，或在介電質板28產生變形，還是可防止 -26- 201207885 蓋構件13的支撐部13a與介電質板28接觸、摩擦。因此， 可防止介電質板28破損或摩擦產生微粒。 特別是本實施形態的電漿處理裝置在〇型環29a的外周 側斷續性地設置複數的間隔件60A，60A，. ·.。因此，複 數的間隔件60A ’ 60A，· ·，與介電質板28之間的接觸面積 會變小’可減少間隔件60A與介電質板28之間的摩擦造成 微粒的發生。 另外’在第3實施形態中，例如圖9所示，在設置Ο型 環29a及Ο型環29b時，也可在〇型環29a的外周側斷續性地 設置複數的間隔件60A，60A，. ·.。 在本實施形態中，間隔件60A是配置於例如2處（2分 割以上）爲理想。藉此，在支撐部13a的階差部表面不會 歪斜’可平坦地配備間隔件60 A。而且，可精度佳地形成 介電質板28與支撐部13a的間隙，因此介電質板28與支撐 部13 a不會接觸、摩擦，可防止介電質板28的破損或微粒 的發生。 本實施形態的其他構成及效果是與第1及第2實施形態 同樣。 [第4實施形態] 其次’說明有關第4實施形態的電漿處理裝置。與第i 〜第3實施形態的電漿處理裝置不同是僅介電質板28與蓋 構件1 3的支撐部1 3 a之間的間隔件的構造，因此與第1〜第 3實施形態同一構成部分的說明省略，只說明有關第4實施 -27- 201207885 形態的電漿處理裝置中特徵的間隔件的構成。 第1〜第3實施形態的電漿處理裝置是在蓋構件13的內 周的壁面13c與介電質板28的外周端的壁面28a之間設置水 平方向的間隙L 1。此間隙L 1是考量介電質板2 8的熱膨脹 之間隙。本實施形態的電漿處理裝置是使由彈性率比0型 環29a，29b大的材料所構成的間隔件60具有介電質板28的 水平方向的定位機能。 圖10是擴大詳細顯示第4實施形態的電漿處理裝置的 介電質板28與蓋構件13的支撐部13a的連接部分（亦即對 應於圖1的A部的部分）的部分剖面圖。 又，圖Π是部分地擴大詳細顯示第4實施形態的電漿 處理裝置之卸下介電質板28的狀態之蓋構件13的支撐部 13 a的上面的圖面。如圖10及圖1 1所示，第4實施形態的電 漿處理裝置的間隔件60B爲了在水平方向定位介電質板28 ，而將剖面形狀形成L字形狀。亦即，間隔件60B是外周 側的上部會突出，形成突出部60a。 在第4實施形態的電漿處理裝置中，可藉由間隔件60B 的突出部60a在水平方向定位介電質板28。亦即，可將介 電質板28確實地設置於預定的水平位置的同時，可在蓋構 件13的內周的壁面13c與介電質板28的外周端的壁面28a之 間確實地確保水平方向的間隙L 1。另外，間隔件60B之突 出部60a的高度可按照介電質板2 8的厚度來任意地設定。 若根據本實施形態的電漿處理裝置，則與第1〜第3實 施形態的電漿處理裝置同樣，藉由間隔件60B在蓋構件1 3 -28- 201207885 的支撐部13a與介電質板28之間形成的間隙d是0.05〜 0.4mm的範圍內爲理想，更理想是0.05〜〇.2mm的範圍內 ，最好是形成於0.05〜0.08mm的範圍內。藉由此間隙d， 即使蓋構件13或介電質板28因爲處理容器1內的電漿照射 而熱膨脹，或在介電質板28產生變形，還是可防止蓋構件 13的支撐部13a與介電質板28接觸、摩擦。因此，可防止 介電質板28破損或摩擦產生微粒。 特別是在本實施形態的電漿處理裝置中，爲了將介電 質板28定位於水平方向，而設置一使間隔件60B的剖面形 狀形成L字形狀，外周側的上部突出的突出部60a，因此可 將介電質板28確實地設置於預定的水平位置。並且，藉由 突出部60a，可在蓋構件13的內周的壁面13c與介電質板28 的外周端的壁面28 a之間確實地確保水平方向的間隙L1。 另外，例如圖1 2所示，爲了容易進行水平方向的定位 ’亦可使用在下面时周緣端形成缺口部28b的介電質板 28A。亦即，藉由使間隔件60抵接於介電質板28a的缺口 部28b ’可確實地將介電質板28 a定位設置於預定的水平 位置。並且，可在蓋構件13的內周的壁面13c與介電質板 28A的外周端的壁面28a之間確實地確保水平方向的間隙 L1 °此情況’間隔件60本身是與圖4等所示的第1實施形態 等的間隔件6 0同樣’只要使用剖面正方形或矩形的間隔件 60即可，只要擴大設定間隔件6〇的厚度即可。 又’亦可採用圖10、圖11所示的間隔件60B及圖12所 示的介電質板28A的形狀的同時，如圖7、圖9所示，亦可 -29- 201207885 採用真空密封性高的0型環29a及耐電漿性高的〇型環2 9b 之雙重的〇型環構造。又，雖圖示省略，但亦可在第3實 施形態的圖8、圖9所示的構成中取代間隔件60A，而斷續 性地配備複數個間隔件60B。例如將間隔件60B配置於2處 以上（2分割以上）爲理想。藉此，可在支撐部i3a的階差 部的表面無歪斜配備間隔件6 0 B。然後，可精度佳地形成 介電質板28與支撐部13a的間隙，因此介電質板28與支撐 部13a不會接觸、摩擦，可防止介電質板28的破損或微粒 的發生。 本實施形態的其他構成及效果是與第1〜第3實施形態 同樣。 [第5實施形態] 其次，說明有關第5實施形態的電漿處理裝置。與第1 〜第4實施形態的電漿處理裝置不同是僅介電質板28與蓋 構件1 3的支撐部1 3 a之間的間隔件的構造，因此與第1〜第 4實施形態同一構成部分的說明省略，只說明有關第5實施 形態的電漿處理裝置中特徵的間隔件的構造。 第1〜第4®施形態的電漿處理裝置是在蓋構件13的內 周的壁面13c與介電質板28的外周端的壁面28a之間設置由 彈性率比Ο型環29a，29b大的材料所構成的間隔件60， 60 A或60B。本實施形態是使用具有聚醯亞胺樹脂及黏著 層的聚醯亞胺膠帶作爲間隔件。 圖13是擴大詳細顯示第5實施形態的電漿處理裝置的S -22 - 201207885 [Second Embodiment] Next, a plasma processing apparatus according to a second embodiment of the present invention will be described with reference to Figs. 6 and 7 . The difference between the plasma processing apparatus according to the second embodiment and the plasma processing apparatus according to the first embodiment is a sealing structure between only the dielectric sheet 28 and the support portion 13a of the lid member 13. Therefore, the description of the same components as those of the plasma processing apparatus according to the first embodiment will be omitted, and only the sealing structure of the plasma processing apparatus according to the second embodiment will be described. Fig. 6 is a partial cross-sectional view showing the connection portion of the dielectric sheet 28 of the plasma processing apparatus of the second embodiment and the support portion 13a of the lid member 13 (i.e., the portion corresponding to the portion A of Fig. 1). . In addition, FIG. 7 is a partially enlarged view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the second embodiment is removed. In the second embodiment, as in the first embodiment, an annular 0-ring 29a' is provided between the dielectric plate 28 and the support portion 13a of the cover member 13 as a seal for sealing. The first sealing member of the plasma processing space in the container 1 is processed. Further, on the outer peripheral side of the O-ring 29a, a spacer 60 is provided to form a gap d between the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric jaw 28. The spacer 60 is made of a material having a larger elastic modulus than the annular 0-ring 29a. Further, in the present embodiment, as shown in Fig. 6 and Fig. 7, the 〇-shaped ring 29b as the second sealing member is provided on the inner peripheral side of the annular 〇-ring 2 9a. That is, a mounting groove 133 for attaching the Ο-shaped ring 29b is formed on the inner peripheral side of the mounting groove 131 of the Ο-shaped ring 29a on the upper surface of the support portion 13a of the cover member 13, and the Ο-shaped ring is pushed in the mounting groove 133. 29b -23- 201207885 and installed. The mounting groove 133 is a groove (antitch) having a narrow upper portion and a wide lower portion, so that the 0-ring 29b is not easily peeled off. Further, the distance L3' between the inner peripheral end of the Ο-shaped ring 29a and the outer peripheral end of the 〇-shaped ring 29b is preferably in the range of 1.5 to 50 mm from the viewpoint of securing the strength of the support portion 13a. Here, the '0-ring 29b is located on the inner peripheral side of the 0-ring 29a, and is easily irradiated with plasma. Therefore, it is preferable that the Ο-shaped ring 29b is made of a material such as a fluorine-based resin material having a higher plasma resistance than the 〇-type ring 29a, or a fluorine-based resin material having a higher plasma resistance than the 〇-type ring 29a. The material is formed by coating an elastic member. Further, since the vacuum sealing is performed by the Ο-shaped ring 29a, the 〇-shaped ring 29b can also be a material having a lower vacuum tightness than the Ο-shaped ring 29a. Here, the specific combination of the material of the 〇-shaped ring 29a and the Ο-shaped ring 29b is, for example, a fluorocarbon rubber such as Viton® (registered trademark) manufactured by Du Pont Co., Ltd., which is excellent in vacuum sealing property, or the like, and the Ο-shaped ring 29a is formed. It is preferable to form the Ο-shaped ring 29b by Kalrez® (registered trademark) manufactured by Du Pont Co., Ltd., which is higher in plasma resistance than the Ο-type ring 29a, or a fluorene-based resin or the like. In the present embodiment, the 〇-shaped ring 29a having a high vacuum sealability is provided as the first sealing member, and the 〇-shaped ring 29b having high plasma resistance is provided as the 0-ring structure of the inside and the outside of the second sealing member. The ring 29b prevents the 〇-shaped ring 29a from being deteriorated by the plasma. Therefore, the vacuum tightness in the processing container 1 using the Ο-ring 29a can be maintained for a long period of time. Further, since the maintenance period such as replacement of the 0-ring 29a of the consumables can be prolonged, the length of the apparatus can be increased during operation, and the productivity can be improved. As described above, the plasma processing apparatus according to the second embodiment is similar to the plasma processing apparatus 100 of the first embodiment-24-201207885, and the gap between the cover member 13 and the dielectric plate 28 is made by the spacer 60. It is preferably formed in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the heat of the plasma generated in the processing container 1, or the dielectric plate 28 is bent downward due to the vacuum, the cover member 13 can be prevented. Contact and friction with the dielectric plate 28. Therefore, it is possible to prevent the dielectric plate 28 from being damaged or the friction with the cover member 13 from causing the occurrence of particles. Further, in the plasma processing apparatus of the present embodiment, the 〇-ring 29a having a high vacuum sealability as the first sealing member and the 〇-type ring 9 9b having a high plasma resistance as the second sealing member are double Ο The ring structure prevents deterioration of the 〇-shaped ring 29a caused by plasma irradiation, and maintains the vacuum sealed state in the processing container 1 for a long period of time. In the present embodiment, the gap d is formed between the cover member 13 and the dielectric plate 28 by the spacer 60, so that the plasma easily enters the gap d. Therefore, the plasma intruding into the gap d can be blocked by the Ο-type ring 29b having high plasma resistance. In the plasma processing apparatus of the present embodiment, the spacer 60, the 〇-ring 29a as the first sealing member, and the 0-ring 29b as the second sealing member are provided in this order from the outside to the inside (vacuum side). By this configuration, it is possible to prevent the occurrence of breakage or fine particles by the contact between the dielectric sheet 28 and the lid member 13, and to prevent deterioration of the 〇-shaped ring 29a, and to ensure vacuum sealing properties for a long period of time. Other configurations and effects of the embodiment are the same as those of the first embodiment. -25-201207885 [Third embodiment] Next, a plasma processing apparatus according to a third embodiment will be described. Unlike the plasma processing apparatus according to the first and second embodiments, only the spacer between the dielectric board 28 and the support portion 13 a of the cover member 13 has a structure, and therefore, it is the same as the first and second embodiments. The description of the components is omitted, and only the configuration of the spacer of the plasma processing apparatus according to the third embodiment will be described. FIG. 8 is a partial enlarged view showing the removal of the dielectric plate of the plasma processing apparatus of the third embodiment. The upper surface of the support portion 13a of the cover member 13 in the state of 28 is shown. As shown in Fig. 8, in the third embodiment, as in the first embodiment, a first portion for sealing the plasma processing space in the processing container 1 between the dielectric plate 28 and the support portion 13a of the lid member 13 is provided. An annular 0-ring 29a of the sealing member. Further, on the outer peripheral side of the O-ring 29a, a gap d is formed between the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric plate 28, and the plural is intermittently provided. Spacer 60A, 60A, .... Therefore, in the upper surface of the support portion 13a of the cover member 13 of the present embodiment, the attachment grooves 132A, 132A, . . . are formed in a discontinuous manner, and a plurality of spacers 60A, 60A can be intermittently arranged. ·. In the same manner as the plasma processing apparatus according to the first and second embodiments, the plasma processing apparatus of the present embodiment forms a gap between the support portion 13a of the cover member 13 and the dielectric plate 28 by the spacer 60A. d (not shown in Figure 8). The gap d is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support of the cover member 13 can be prevented -26-201207885 The portion 13a is in contact with and rubbed against the dielectric plate 28. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles. In particular, in the plasma processing apparatus of the present embodiment, a plurality of spacers 60A, 60A, . . . are provided intermittently on the outer peripheral side of the 〇-ring 29a. Therefore, the contact area between the plurality of spacers 60A' 60A, ... and the dielectric plate 28 becomes small', and the friction between the spacer 60A and the dielectric plate 28 is reduced to cause the occurrence of particles. In the third embodiment, for example, as shown in Fig. 9, when the Ο-ring 29a and the Ο-ring 29b are provided, a plurality of spacers 60A, 60A may be intermittently provided on the outer peripheral side of the 〇-ring 29a. ,. ·.. In the present embodiment, it is preferable that the spacers 60A are disposed at, for example, two places (two or more divisions). Thereby, the spacer 60A can be provided flat without being skewed on the surface of the step portion of the support portion 13a. Further, since the gap between the dielectric plate 28 and the support portion 13a can be formed with high precision, the dielectric plate 28 does not contact or rub against the support portion 13a, and damage of the dielectric plate 28 or generation of particles can be prevented. Other configurations and effects of the present embodiment are the same as those of the first and second embodiments. [Fourth embodiment] Next, a plasma processing apparatus according to a fourth embodiment will be described. Unlike the plasma processing apparatuses of the first to third embodiments, the spacers between the dielectric sheet 28 and the support portion 13a of the lid member 13 are different from the first to third embodiments. The description of the components is omitted, and only the configuration of the spacers in the plasma processing apparatus of the fourth embodiment -27 to 201207885 will be described. In the plasma processing apparatus of the first to third embodiments, a gap L1 in the horizontal direction is provided between the inner wall surface 13c of the lid member 13 and the wall surface 28a of the outer peripheral end of the dielectric sheet 28. This gap L 1 is a gap in consideration of thermal expansion of the dielectric plate 28. In the plasma processing apparatus of the present embodiment, the spacer 60 made of a material having a larger modulus of elasticity than the 0-rings 29a and 29b has a positioning function in the horizontal direction of the dielectric board 28. Fig. 10 is a partial cross-sectional view showing, in detail, a portion where the dielectric plate 28 of the plasma processing apparatus of the fourth embodiment is connected to the support portion 13a of the lid member 13 (i.e., a portion corresponding to the portion A of Fig. 1). In the meantime, the upper surface of the support portion 13a of the cover member 13 in the state in which the dielectric sheet 28 of the plasma processing apparatus of the fourth embodiment is removed is partially enlarged. As shown in Fig. 10 and Fig. 11, the spacer 60B of the plasma processing apparatus according to the fourth embodiment has an L-shaped cross-sectional shape in order to position the dielectric plate 28 in the horizontal direction. That is, the spacer 60B protrudes from the upper portion on the outer peripheral side to form the protruding portion 60a. In the plasma processing apparatus of the fourth embodiment, the dielectric board 28 can be positioned in the horizontal direction by the protruding portion 60a of the spacer 60B. In other words, the dielectric plate 28 can be surely disposed at a predetermined horizontal position, and the horizontal direction can be surely ensured between the wall surface 13c of the inner periphery of the cover member 13 and the wall surface 28a of the outer peripheral end of the dielectric plate 28. The gap L 1 . Further, the height of the protruding portion 60a of the spacer 60B can be arbitrarily set in accordance with the thickness of the dielectric board 28. According to the plasma processing apparatus of the present embodiment, similarly to the plasma processing apparatus of the first to third embodiments, the spacers 60B are provided on the support portion 13a of the cover member 1 3 -28 - 201207885 and the dielectric plate. The gap d formed between 28 is preferably in the range of 0.05 to 0.4 mm, more preferably 0.05 to 0.2 mm, and is preferably formed in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles. In particular, in the plasma processing apparatus of the present embodiment, in order to position the dielectric plate 28 in the horizontal direction, a protruding portion 60a in which the cross-sectional shape of the spacer 60B is formed in an L shape and the upper portion on the outer peripheral side is protruded is provided. Therefore, the dielectric board 28 can be surely disposed at a predetermined horizontal position. Further, by the protruding portion 60a, the horizontal gap L1 can be surely secured between the wall surface 13c of the inner periphery of the cover member 13 and the wall surface 28a of the outer peripheral end of the dielectric sheet 28. Further, for example, as shown in Fig. 12, in order to facilitate positioning in the horizontal direction, a dielectric plate 28A having a notch portion 28b at the peripheral end may be used. That is, the dielectric plate 28a can be surely positioned at a predetermined horizontal position by abutting the spacer 60 against the notch portion 28b' of the dielectric plate 28a. Further, a gap L1 in the horizontal direction can be surely ensured between the wall surface 13c on the inner circumference of the lid member 13 and the wall surface 28a at the outer peripheral end of the dielectric sheet 28A. The spacer 60 itself is the same as that shown in FIG. 4 and the like. In the same manner as the spacer 60 of the first embodiment, the spacer 60 may be used as long as the cross-sectional square or the rectangular spacer 60 is used, and the thickness of the spacer 6 设定 may be increased. Moreover, the shape of the spacer 60B shown in FIGS. 10 and 11 and the dielectric plate 28A shown in FIG. 12 can be used, and as shown in FIGS. 7 and 9, a vacuum seal can be used as -29-201207885. The double-shaped ring structure of the high-type 0-ring 29a and the high-resistance 〇-type ring 2 9b. Further, although not shown in the drawings, the spacer 60A may be replaced in the configuration shown in Figs. 8 and 9 of the third embodiment, and a plurality of spacers 60B may be intermittently provided. For example, it is preferable to arrange the spacer 60B at two or more positions (two or more divisions). Thereby, the spacer 60B can be provided without any skew on the surface of the step portion of the support portion i3a. Then, the gap between the dielectric plate 28 and the support portion 13a can be formed with high precision, so that the dielectric plate 28 does not contact and rub against the support portion 13a, and damage of the dielectric plate 28 or generation of particles can be prevented. Other configurations and effects of the present embodiment are the same as those of the first to third embodiments. [Fifth Embodiment] Next, a plasma processing apparatus according to a fifth embodiment will be described. Unlike the plasma processing apparatuses of the first to fourth embodiments, the spacers between the dielectric board 28 and the support portion 13a of the cover member 13 are different from the first to fourth embodiments. The description of the components is omitted, and only the structure of the spacer of the plasma processing apparatus according to the fifth embodiment will be described. In the plasma processing apparatus of the first to fourth embodiments, the elastic modulus is larger than the Ο-rings 29a and 29b between the wall surface 13c on the inner circumference of the lid member 13 and the wall surface 28a at the outer peripheral end of the dielectric sheet 28. A spacer 60, 60 A or 60B of material. In this embodiment, a polyimide film having a polyimide resin and an adhesive layer is used as a spacer. Fig. 13 is an enlarged view showing the plasma processing apparatus of the fifth embodiment in detail;

S -30- 201207885 介電質板28與蓋構件13的支撐部13a的連接部分（亦即對 應於圖1的A部的部分）的部分剖面圖。又’圖14是部分 地擴大詳細顯示第5實施形態的電獎處理裝置之卸下介電 質板28的狀態之蓋構件13的支撐部13 a的上面的圖面。如 圖13及圖14所示，在第5實施形態的電漿處理裝置中，間 隔件60C是藉由環狀或組合而成環狀的複數個弧狀的聚醯 亞胺膠帶所構成。 在圖15中擴大顯示可作爲間隔件60C利用的聚醢亞胺 膠帶70的剖面構造。聚醯亞胺膠帶70是具備聚醯亞胺薄膜 層7 0A、及設於該聚醯亞胺薄膜層7 0A的一面的黏著層7 0B 。在此，聚醯亞胺薄膜層70 A是例如使用玻璃轉移溫度（ Tg)爲120°C〜250°C的範圍內，熱膨脹係數爲3xl(T5/°C〜 5xl(T5/°C的範圍內，楊式模數爲3 20〜3 5 0kgf/mm2的範圍 內之耐熱性聚醯亞胺樹脂爲理想。又，黏著層70B的材質 是只要具有對金屬表面的黏著性者即可，並無特別加以制 < 限，例如可使用耐熱性矽黏著劑。聚醯亞胺膠帶70的厚度 (亦即，聚醯亞胺薄膜層70A與黏著層70B的合計厚度） 是只要能夠使間隙d例如上述般形成於〇.〇5〜0.4mm的範圍 內即可。因此，聚醯亞胺膠帶70的厚度是例如可爲35μιη 以上400μπι以下的範圍內的極薄厚度。如此構造的聚醯亞 胺膠帶7 0可利用市售品，例如株式會社寺岡製作所製的 Kapton®膠帶（Kapton®爲註冊商標）等。 在本實施形態的電漿處理裝置中，藉由使用具有黏著 層70B的聚醯亞胺膠帶70作爲間隔件60C，不易產生間隔 -31 - 201207885 件60C的位移。因此，可不在蓋構件13的支撐部13a設置安 裝溝1 32來貼附間隔件60C。因此，可削減安裝溝的加工所 要的工程，同時可降低起因於安裝溝的微粒或金屬污染的 發生機率。另外，在本實施形態中，亦可因應所需，設置 與第1〜第4實施形態同樣的安裝溝132，在此配備間隔件 60C。 又，間隔件60C亦可貼附於介電質板28的下面、及蓋 構件1 3的支撐部1 3 a的上面的哪面。基於抑制構成間隔件 60C的聚醯亞胺薄膜層70A的表面的創傷或磨耗，最好使 黏著層70B抵接於支撐部13a的上面來貼附間隔件60C。 若根據本實施形態的電漿處理裝置，則與第1〜第4實 施形態的電漿處理裝置同樣，藉由間隔件60C在蓋構件13 的支撐部13a與介電質板28之間形成的間隙d是0.05〜 0.4mm的範圍內爲理想，更理想是0.05〜0.2mm的範圍內 ，最好是形成於〇.〇5〜0.08mm的範圍內。藉由此間隙d， 即使蓋構件13或介電質板28因爲處理容器1內的電漿照射 而熱膨脹，或在介電質板28產生變形，還是可防止蓋構件 13的支撐部13a與介電質板28接觸、摩擦。因此，可防止 介電質板2 8破損或摩擦產生微粒。 尤其本實施形態的電漿處理裝置是使用具有黏著層 70B的聚醯亞胺膠帶70作爲間隔件60C，不易產生位移， 即使不設置安裝溝1 32，照樣可貼附於預定的位置而定位 。因此，不需要安裝溝的加工工程。 並且，在本實施形態中亦與第2實施形態同樣，可採 -32- 201207885 用雙重0型環構造。亦即，如圖16及圖17所示，可從外側 往內側（真空側）依序配備作爲間隔件60C的聚醯亞胺膠 帶70、真空密封性高的Ο型環29a、及耐電漿性高的0型環 2 9b。藉由如此的構成，可一面防止介電質板28的蓋構件 13的接觸造成破損或微粒的發生，一面防止0型環29a的劣 化，長期間確保真空密封性。又，雖圖示省略，但亦可與 第3實施形態的圖8、圖9所示的構成同樣，斷續性地配備 複數個作爲間隔件60C的聚醯亞胺膠帶70»聚醯亞胺膠帶 7〇是貼附於2處以上（2分割以上）爲理想，例如可貼附於 3處（3分割）。藉此，可在支撐部13a的表面無皺平坦地 貼附聚醯亞胺膠帶70。而且，可精度佳地形成介電質板28 與支撐部13a的間隙d，因此不會有介電質板28與支撐部 13a的接觸 '摩擦，可防止介電質板28的破損或微粒的發 生。 本實施形態的其他構成及效果是與第1〜第3實施形態 同樣。 [第6實施形態] 其次，說明有關第6實施形態的電漿處理裝置。與第5 實施形態的電漿處理裝置不同是介電質板28與蓋構件13的 支撐部13a之間的密封構件的構造，因此與第1〜第5實施 形態同一構成部分的說明省略，只說明有關第6實施形態 的電漿處理裝置中特徵的密封構件的構造。 第5實施形態的電漿處理裝置的一態樣是在蓋構件！3 -33- 201207885 的內周的壁面13c與介電質板28的外周端的壁面28a之間使 用聚醯亞胺膠帶7〇作爲彈性率比〇型環大的材料所構成的 間隔件60C的同時，設置真空密封性高的Ο型環2 9a及耐電 漿性高的0型環29b。本實施形態是將具有真空密封性高 的材質的部分及耐電漿性高的材質的部分之〇型環80設於 1處，作爲密封構件。 圖1 8是擴大詳細顯示第6實施形態的電漿處理裝置的 介電質板28與蓋構件13的支撐部13a的連接部分（亦即對 應於圖1的A部的部分）的部分剖面圖。又，圖19是部分 地擴大詳細顯示第5實施形態的電漿處理裝置之卸下介電 質板28的狀態之蓋構件13的支撐部13a的上面的圖面。如 圖18及圖19所示，在第6實施形態的電漿處理裝置中，〇 型環80是藉由組合相異的2種材質所構成。亦即，成爲〇 型環80的外周側的大致一半的部分80A是藉由真空密封性 高的彈性材料所形成，成爲內周側（真空側）的大致一半 的部分80B是藉由耐電漿性高的彈性材料所形成。在此， 真空密封性高的彈性材料，例如可舉以Vito η® (註冊商標 )等爲代表的氟橡膠。又，耐電漿性高的彈性材料，例如 可舉聚四氟乙烯等的氟系樹脂。 本實施形態是使用內外2層構造的Ο型環80 (具有真 空密封性高的彈性材料的部分80Α、及耐電漿性高的彈性 材料的部分80Β )作爲密封構件，藉此可不用將〇型環配 備於2處’只要配備於1處，便可防止電漿造成劣化，確保 真空密封性。因此’可削減零件數的同時，可將安裝溝的S -30- 201207885 A partial cross-sectional view of a portion where the dielectric plate 28 and the support portion 13a of the cover member 13 are connected (i.e., a portion corresponding to the portion A of Fig. 1). Further, Fig. 14 is a partially enlarged plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric board 28 of the fifth embodiment is removed. As shown in Fig. 13 and Fig. 14, in the plasma processing apparatus of the fifth embodiment, the spacer 60C is composed of a plurality of arc-shaped polyimine tapes which are ring-shaped or combined in a ring shape. The cross-sectional structure of the polyimide tape 70 which can be utilized as the spacer 60C is enlarged in Fig. 15 . The polyimide tape 70 is provided with a polyimide film layer 70A and an adhesive layer 70B provided on one side of the polyimide film layer 70A. Here, the polyimide film layer 70 A is, for example, in a range in which the glass transition temperature (Tg) is in the range of 120 ° C to 250 ° C, and the coefficient of thermal expansion is 3 x 1 (T5 / ° C to 5 x 1 (T5 / ° C range) In the inside, the heat-resistant polyimide resin having a modulus of 3 20 to 3 50 kgf/mm 2 is preferable, and the material of the adhesive layer 70B is only required to have adhesion to the metal surface. In particular, for example, a heat-resistant adhesive can be used. The thickness of the polyimide tape 70 (that is, the total thickness of the polyimide film layer 70A and the adhesive layer 70B) is such that the gap d can be made, for example. The above-described formation is preferably in the range of 5 to 0.4 mm. Therefore, the thickness of the polyimide lens 70 can be, for example, an extremely thin thickness in the range of 35 μm or more and 400 μm or less. A commercially available product such as Kapton® tape (Kapton® is a registered trademark) manufactured by Teraoka Seisakusho Co., Ltd., etc. can be used for the tape 70. In the plasma processing apparatus of the present embodiment, by using the adhesive layer 70B The amine tape 70 is used as the spacer 60C, and the interval is not easily generated -31 - 20 1207885 The displacement of 60C. Therefore, the mounting groove 1 32 may not be provided in the support portion 13a of the cover member 13 to attach the spacer 60C. Therefore, the work required for the processing of the installation groove can be reduced, and the particles resulting from the installation groove can be reduced. In addition, in the present embodiment, the mounting groove 132 similar to the first to fourth embodiments may be provided as needed, and the spacer 60C may be provided here. Further, the spacer 60C may be provided. The surface of the lower surface of the dielectric member 28 and the upper surface of the support portion 13 a of the cover member 13 are attached. The wound or abrasion of the surface of the polyimide film layer 70A constituting the spacer 60C is suppressed. The adhesive layer 70B is brought into contact with the upper surface of the support portion 13a to attach the spacer 60C. The plasma processing apparatus according to the present embodiment is separated from the plasma processing apparatus according to the first to fourth embodiments by the interval. The gap 60 formed between the support portion 13a of the cover member 13 and the dielectric plate 28 is preferably in the range of 0.05 to 0.4 mm, more preferably 0.05 to 0.2 mm, and is preferably formed in the crucible. 〇5~0.08mm in range The gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or is deformed in the dielectric plate 28, the support portion 13a of the cover member 13 and the dielectric plate can be prevented. Therefore, it is possible to prevent the dielectric plate 28 from being damaged or rubbed to generate fine particles. In particular, the plasma processing apparatus of the present embodiment uses the polyimide tape 70 having the adhesive layer 70B as the spacer 60C, which is less likely to be generated. The displacement, even if the installation groove 1 32 is not provided, can be attached to a predetermined position for positioning. Therefore, there is no need to install a groove for processing. Further, in the present embodiment, as in the second embodiment, a double 0-ring structure can be adopted from -32 to 201207885. That is, as shown in Fig. 16 and Fig. 17, the polyimide tape 70 as the spacer 60C, the Ο-ring 29a having high vacuum sealing property, and the plasma resistance can be sequentially provided from the outside to the inside (vacuum side). High 0-ring 2 9b. With such a configuration, it is possible to prevent the deterioration of the O-ring 29a while preventing the contact of the cover member 13 of the dielectric plate 28 from being damaged or the occurrence of fine particles, and to secure the vacuum sealing property for a long period of time. Further, although not shown in the drawings, similarly to the configuration shown in Figs. 8 and 9 of the third embodiment, a plurality of polyimine tapes 70»polyimine as the spacers 60C may be intermittently provided. It is preferable that the tape 7 is attached to two or more places (two or more divisions), and for example, it can be attached to three places (three divisions). Thereby, the polyimide tape 70 can be attached flat on the surface of the support portion 13a without wrinkles. Moreover, the gap d between the dielectric plate 28 and the support portion 13a can be formed with high precision, so that the contact between the dielectric plate 28 and the support portion 13a is not rubbed, and the dielectric plate 28 can be prevented from being damaged or fine particles. occur. Other configurations and effects of the present embodiment are the same as those of the first to third embodiments. [Sixth embodiment] Next, a plasma processing apparatus according to a sixth embodiment will be described. The difference from the plasma processing apparatus according to the fifth embodiment is the structure of the sealing member between the dielectric sheet 28 and the support portion 13a of the lid member 13. Therefore, the description of the same components as those of the first to fifth embodiments is omitted. The structure of the sealing member which is characteristic of the plasma processing apparatus of the sixth embodiment will be described. An aspect of the plasma processing apparatus of the fifth embodiment is the cover member! Between the wall surface 13c of the inner circumference of 3 - 33 - 201207885 and the wall surface 28a of the outer peripheral end of the dielectric board 28, the polyimide 60 tape is used as the spacer 60C which consists of a material which is larger than the 〇 type ring. A 真空-type ring 9 9a having a high vacuum sealing property and a 0-ring 29b having a high plasma resistance are provided. In the present embodiment, a portion having a material having a high vacuum sealing property and a portion of a material having a high plasma resistance are provided in one portion as a sealing member. FIG. 18 is a partial cross-sectional view showing the connection portion of the dielectric plate 28 of the plasma processing apparatus of the sixth embodiment and the support portion 13a of the cover member 13 (that is, the portion corresponding to the portion A of FIG. 1). . In addition, FIG. 19 is a plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the fifth embodiment is removed in detail. As shown in Figs. 18 and 19, in the plasma processing apparatus of the sixth embodiment, the 〇-shaped ring 80 is composed of two different materials. In other words, the portion 80A which is substantially half of the outer peripheral side of the 〇-shaped ring 80 is formed of an elastic material having a high vacuum sealing property, and the portion 80B which is substantially half of the inner peripheral side (vacuum side) is made by the plasma resistance. Highly elastic material is formed. Here, for example, a fluororubber typified by Vito η® (registered trademark) or the like can be used as the elastic material having a high vacuum sealability. Further, the elastic material having high plasma resistance is, for example, a fluorine-based resin such as polytetrafluoroethylene. In the present embodiment, a Ο-shaped ring 80 having a two-layer structure of inner and outer layers (a portion 80 具有 having an elastic material having a high vacuum sealing property and a portion 80 弹性 having an elastic material having a high plasma resistance) is used as the sealing member, whereby the 〇 type can be eliminated. The ring is equipped in two places' as long as it is equipped in one place, it can prevent deterioration of the plasma and ensure vacuum tightness. Therefore, while the number of parts can be reduced, the groove can be installed.

S -34- 201207885 加工所要的工程從2處減少至1處。 又，本實施形態的電漿處理裝置與第丨〜第4實施形態 的電漿處理裝匱同樣，在蓋構件13的支撐部13a與介電質 板28之間藉由彈性率比〇型環大的材料所構成的間隔件 60C來形成的間隙d是0.05〜0.4mm的範圍內爲理想，更理 想是0_05〜0.2mm的範圍內，最好是形成於0.05〜〇,〇8mm 的範圍內。藉由此間隙d， 即使蓋構件13或介電質板28因爲處理容器1內的電漿 照射而熱膨脹，或在介電質板28產生變形，還是可防止蓋 構件13的支撐部13a與介電質板28接觸、摩擦。因此，可 防止介電質板28破損或摩擦產生微粒。而且，與第5實施 形態的電漿處理裝置同樣，藉由使用具有黏著層70B的聚 醯亞胺膠帶7 0作爲間隔件6 0 C，不易產生位移，即使不設 置安裝溝132’還是可貼附於預定的位置而定位。因此， 不需要間隔件的安裝溝的加工工程。並且，可從外側往內 側（真空側）依序配備作爲間隔件60C的聚醯亞胺膠帶70 、內外2層構造的Ο型環80之真空密封性高的彈性材料的 部分80A、及耐電漿性高的彈性材料的部分80B，藉由如 此的構成，可一面防止介電質板28與蓋構件13的接觸造成 破損或微粒的發生，一面防止〇型環的劣化，長期間確保 真空密封性。 又，本實施形態中，雖圖示省略，但亦可與第3實施 形態的圖8、圖9所示的構成同樣，斷續性地配備複數個作 爲間隔件60C的聚醯亞胺膠帶70。聚醯亞胺膠帶70是貼附 -35- 201207885 於2處以上（2分割以上）爲理想，例如可貼附於3處（3分 割）。藉此’可在支撐部13a的階差部表面無皺平坦地貼 附聚醯亞胺膠帶70。而且，可精度佳地形成介電質板28與 支撐部13a的間隙d ’因此不會有介電質板28與支撐部13a 的接觸、摩擦’可防止介電質板28的破損或微粒的發生。 本實施形態的其他構成及效果是與第1〜3、5的實施 形態同樣。 [第7實施形態] 其次’說明有關本發明的第7實施形態的電漿處理裝 置。本實施形態的電漿處理裝置是具備作爲用以辨識處理 容器1的內部的觀察窗之視口的點與上述第1〜第6實施形 態的電漿處理裝置不同。亦即，除了視口，本實施形態的 電漿處理裝置是維持具備上述第1〜第6實施形態的電漿處 理裝置的任一特徵。以下，與第1〜第6實施形態同構成的 說明省略，只針對第7實施形態的電漿處理裝置的特徵部 分進行。 圖27是表示本實施形態的電漿處理裝置1〇1的構成例 的槪略剖面圖。電漿處理裝置101是具備用以從外部來確 認處理容器1內的電漿生成空間S的狀態之視口 200。圖28 是擴大顯示圖27的電漿處理裝置之視口 200的構成構件的 分解立體圖。圖29是視口 200的水平方向的擴大剖面圖。 在本實施形態的電漿處理裝置101的側壁lb是形成有作爲 觀察用開口部的開口 201。在開口 201內被插入窗構件210 -36- 201207885 的一部分的突出部211。然後，窗構件21 0是從處理容器1 的外側藉由作爲固定構件的固定板220來固定。另外，在 對應於側壁lb的開口 201的位置，於襯裡7亦設有開口。 窗構件210是例如藉由石英等的透明材質所形成。窗 構件210是具有：被插入處理容器1的開口 201內的突出部 211、及與該突出部211成一體，擴大成凸緣狀的基部213 。如圖28所示，窗構件210的突出部211是突出於對板狀的 基部213呈正交的方向。突出部211的前端面211 a是彎曲成 弓狀。此前端面211 a的彎曲是如圖29所示，形成和呈圓筒 狀的處理容器1的側壁lb的內周面lb IN的彎曲同曲率。並 且，突出部211的突出量是考量處理容器1的側壁lb的厚度 來決定。而且，突出部211的形狀（寬度及厚度）及大小 (體積）是被精密加工成與側壁1 b的開口 20 1的形狀（寬 度及高度）及大小（空間的容積）幾乎一致。亦即’在安 裝窗構件210的狀態中，上述突出部211與側壁lb的開口 201的內面是具有突出部211可插入開口 201的範圍內的間 距，形成儘可能無間隙嵌合。該間距是電漿不會進入開口 201內的範圍，例如0.1mm〜2mm的範圍內爲理想，更理想 是0.5mm〜1mm的範圍內。 呈板狀的固定板220是例如藉由鋁、不鏽鋼等的金屬 來形成比窗構件210的基部21 3更大上一圈。固定板220是 具有：嵌入窗構件210的基部213的凹部221、及設於該凹 部221的貫通開口 223。固定板220是在其凹部221嵌入窗構 件210的基部213，使窗構件210從外側推擠至處理容器1的 -37- 201207885 側壁1 b而固定。固定板220是在任意的部位例如藉由螺絲 來固定於側壁lb。在圖28是描繪形成於固定板220的四角 落的螺絲孔2 2 5，但並非限於此位置或數量。貫通開口 2 2 3 的大小，爲了確保可辨識處理容器1內的大小’且確實地 進行窗構件2 1 0的固定’而形成比窗構件2 1 0的基部2 1 3更 小。可從此貫通開口 2 2 3經由透明的窗構件2 1 0來辨識處理 容器1內。藉由使用固定板220來將窗構件210確實地固定 於處理容器1，密封成電漿不會洩漏於處理容器1之外》 如圖2 9所示，在處理容器1的側壁1 b ’以能夠包圍開 口 201的方式形成有溝203。在此溝203內嵌入作爲密封構 件的〇型環205。窗構件210是在突出部211插入側壁lb的 開口 201內的狀態下，藉由固定板220來推擠至側壁lb側， 因此可藉由開口 201的周圍的Ο型環205來確保開口 201的 氣密性。 在此，藉由與以往的電漿處理裝置的對比來說明本實 施形態的電漿處理裝置的優點。在以往的電漿處理裝置中 是以能夠從外側（大氣側）覆蓋處理容器1的開口之方式 安裝石英等材質的平板狀的窗構件，形成視口。開口的周 圍是在與平板狀的窗構件之間配設有〇型環而密封，保持 氣密性。但，就如此的以往的視口的構造而言，在處理容 器內所生成的電漿會進入開口內，且容易繞進密封部的〇 型環的位置，對0型環造成損傷，而有產生微粒或0型環 的更換壽命變短的問題。 針對上述問題，本實施形態的電漿處理裝置是窗構件 -38- 201207885 210具備突出部211，該突出部211的大小是與側壁lb的開 口 201的大小幾乎一致。亦即，開口 201與突出部21 1是以 些微的間距幾乎無間隙地嵌合。因此，可有效地防止電漿 從處理容器1內的電漿生成空間S繞進至開口 201的外側的 Ο型環205的配設位置。亦即，窗構件210的突出部211具 有防止電漿侵入至開口 201內的作用。因此，可有效地防 止電漿經由開口 201來繞進密封部，〇型環205受損劣化而 產生微粒，或更換時期提早。 並且，突出部211的前端面211 a是配合呈圓筒狀的處 理容器1的側壁lb的內周面lbIN的彎曲來同曲率形成。藉 由如此的特徵形狀，將窗構件2 1 0安裝於側壁1 b的狀態下 ，側壁lb的內周面lbIN^窗構件210之間不會產生階差。 如此，因爲無階差，所以可防止對於處理容器1內的電漿 生成空間S所產生的電漿造成影響，例如電漿的擴散或分 布改變，電漿密度會變化。藉此，可對處理容器1內的被 處理體均一地進行安定的電漿處理。 如以上般，若根據本實施形態的電漿處理裝置1 0 1， 則可減少來自視口 200的微粒發生。而且，將本實施形態 的視口 200的構成適用於第1〜第6實施形態的電漿處理裝 置，可綜合性地更確實地防止在處理容器1內的微粒發生 ，且可生成安定的電漿來進行電漿處理，因此可實現一種 可靠度高的半導體製程。本實施形態的其他構成及效果是 與第1〜6的實施形態同樣。 -39- 201207885 [磨耗試驗] 其次，針對在第5及第6實施形態的電漿處理裝置所使 用的聚醯亞胺膠帶70來說明有關評價耐久性後的磨耗試驗 的結果。如圖20A及圖20B所示，準備一評價裝置，其係 具備：當作蓋構件13的支撐部13a之金屬製的塊材90、及 當作介電質板28之可動式的石英板91。然後，在塊材90或 石英板91的其中任一方貼附厚度80μιη的聚醯亞胺膠帶70 。另外，使用株式會社寺岡製作所製的kapton膠帶（ kapton爲註冊商標）作爲聚醯亞胺膠帶70。 圖20A是表示將聚醯亞胺膠帶70的黏著層70B貼附於 塊材90的狀態，圖20B是表示將聚醯亞胺膠帶70的黏著層 70B貼附於石英板91的狀態。然後，使塊材90與石英板91 接近，一邊從兩側以相當面壓280000N的壓力來壓接聚醯 亞胺膠帶70，一邊使石英板91以一往返的移動量lmm來6 萬次往返移動於圖20A，20B中的左右方向。針對3個樣品 來測定試驗中的聚醯亞胺膠帶70的厚度，且利用表面粗度 測定器（Mitutoyo公司製SJ301 )來測定聚醯亞胺膠帶70 的表面粗度。 在圖21及圖22顯示石英板91的移動次數與聚醯亞胺膠 帶70的厚度的關係。圖21是將聚醯亞胺膠帶70的黏著層 70B貼附於塊材90時的結果，圖22是將聚醯亞胺膠帶70的 黏著層70B貼附於石英板91時。由圖21可知，在將聚醯亞 胺膠帶70的黏著層70B貼附於塊材90時，6萬次的往復移動 後，聚醯亞胺膠帶70的厚度幾乎不變化。並且，在表面粗S -34- 201207885 The number of works required for processing is reduced from 2 to 1. Further, in the plasma processing apparatus of the present embodiment, similarly to the plasma processing apparatus of the fourth to fourth embodiments, the elastic modulus ratio 〇-ring is provided between the support portion 13a of the cover member 13 and the dielectric sheet 28. The gap d formed by the spacer 60C made of a large material is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0_05 to 0.2 mm, and preferably in the range of 0.05 to 〇, 〇 8 mm. . By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles. Further, similarly to the plasma processing apparatus of the fifth embodiment, by using the polyimide tape 70 having the adhesive layer 70B as the spacer 60C, displacement is less likely to occur, and the mounting groove 132' can be attached without being attached. Attached to a predetermined location for positioning. Therefore, the processing work of the installation groove of the spacer is not required. Further, from the outer side to the inner side (vacuum side), a polyimide tape 70 as a spacer 60C, a portion 80A of a vacuum-tight elastic material having a double-layer inner and outer structure 80, and a plasma-resistant portion can be sequentially provided. With such a configuration, the portion 80B of the high-elastic material can prevent the deterioration of the 〇-ring while preventing the occurrence of breakage or the occurrence of fine particles by the contact between the dielectric sheet 28 and the lid member 13, and the vacuum sealing property can be ensured for a long period of time. . In the present embodiment, the same as the configuration shown in Figs. 8 and 9 of the third embodiment, a plurality of polyimide tapes 70 as spacers 60C may be intermittently provided. . Polyimide tape 70 is preferably attached to -35 - 201207885 in two or more places (two or more divisions), for example, it can be attached to three places (three divisions). Thereby, the polyimide tape 70 can be attached to the surface of the step portion of the support portion 13a without wrinkles. Moreover, the gap d' between the dielectric plate 28 and the support portion 13a can be accurately formed, so that the contact and friction of the dielectric plate 28 with the support portion 13a can be prevented, and the dielectric plate 28 can be prevented from being damaged or particulate. occur. Other configurations and effects of the present embodiment are the same as those of the first to third and fifth embodiments. [Seventh embodiment] Next, a plasma processing apparatus according to a seventh embodiment of the present invention will be described. The plasma processing apparatus of the present embodiment is different from the plasma processing apparatus of the above-described first to sixth embodiments in that it is provided with a viewport for identifying the inside of the processing container 1. In other words, the plasma processing apparatus of the present embodiment maintains any of the features of the plasma processing apparatus including the above-described first to sixth embodiments. Hereinafter, the description of the configuration of the first to sixth embodiments will be omitted, and only the characteristic portions of the plasma processing apparatus of the seventh embodiment will be described. Fig. 27 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus 1A according to the embodiment. The plasma processing apparatus 101 is a viewport 200 provided with a state for confirming the plasma generation space S in the processing container 1 from the outside. Fig. 28 is an exploded perspective view showing the components of the viewport 200 of the plasma processing apparatus of Fig. 27 in an enlarged manner. Figure 29 is an enlarged cross-sectional view of the viewport 200 in the horizontal direction. In the side wall 1b of the plasma processing apparatus 101 of the present embodiment, an opening 201 as an observation opening is formed. A projection 211 of a portion of the window member 210-36-201207885 is inserted into the opening 201. Then, the window member 210 is fixed from the outer side of the processing container 1 by a fixing plate 220 as a fixing member. Further, at the position corresponding to the opening 201 of the side wall lb, the lining 7 is also provided with an opening. The window member 210 is formed of, for example, a transparent material such as quartz. The window member 210 has a protruding portion 211 that is inserted into the opening 201 of the processing container 1, and a base portion 213 that is formed integrally with the protruding portion 211 and that is expanded into a flange shape. As shown in Fig. 28, the protruding portion 211 of the window member 210 protrudes in a direction orthogonal to the plate-like base portion 213. The front end face 211a of the protruding portion 211 is curved in an arch shape. The bending of the front end surface 211a is as shown in Fig. 29, and the curvature of the inner peripheral surface lb IN of the side wall lb of the cylindrical processing container 1 is formed to have the same curvature. Further, the amount of protrusion of the protruding portion 211 is determined by considering the thickness of the side wall lb of the processing container 1. Further, the shape (width and thickness) and size (volume) of the protruding portion 211 are precisely machined to substantially match the shape (width and height) and size (volume of the space) of the opening 20 1 of the side wall 1 b. That is, in the state in which the window member 210 is mounted, the inner surface of the opening portion 211 and the opening 201 of the side wall 1b is a distance in a range in which the protruding portion 211 can be inserted into the opening 201, forming a fitting with no gap as possible. This pitch is a range in which the plasma does not enter the opening 201, and is preferably in the range of, for example, 0.1 mm to 2 mm, more preferably in the range of 0.5 mm to 1 mm. The plate-shaped fixing plate 220 is formed to be larger than the base portion 21 3 of the window member 210 by, for example, metal such as aluminum or stainless steel. The fixing plate 220 has a concave portion 221 that is fitted into the base portion 213 of the window member 210, and a through opening 223 provided in the concave portion 221. The fixing plate 220 is fitted into the base portion 213 of the window member 210 at its concave portion 221, and the window member 210 is pushed from the outside to the side wall 1b of the processing container 1 to be fixed. The fixing plate 220 is fixed to the side wall lb at an arbitrary position, for example, by screws. In Fig. 28, the screw holes 2 2 5 formed in the four corners of the fixing plate 220 are depicted, but are not limited to this position or number. The size of the through opening 2 2 3 is smaller than the base portion 2 1 3 of the window member 2 10 in order to ensure that the size ' within the processing container 1 can be recognized and the fixing of the window member 2 10 is surely performed. From here, the inside of the processing container 1 can be identified via the transparent window member 2 1 3 through the through opening 2 2 3 . By using the fixing plate 220 to securely fix the window member 210 to the processing container 1, it is sealed that the plasma does not leak out of the processing container 1" as shown in Fig. 29. At the side wall 1b' of the processing container 1 A groove 203 is formed in such a manner as to surround the opening 201. A 〇-shaped ring 205 as a sealing member is embedded in the groove 203. The window member 210 is pushed to the side of the side wall lb by the fixing plate 220 in a state where the protruding portion 211 is inserted into the opening 201 of the side wall lb, so that the opening 201 can be secured by the Ο-shaped ring 205 around the opening 201. Air tightness. Here, the advantages of the plasma processing apparatus of the present embodiment will be described by comparison with a conventional plasma processing apparatus. In the conventional plasma processing apparatus, a flat window member made of a material such as quartz is attached so as to cover the opening of the processing container 1 from the outside (atmosphere side) to form a viewport. The circumference of the opening is sealed by being provided with a 〇-shaped ring between the flat window members, and the airtightness is maintained. However, with such a conventional viewport structure, the plasma generated in the processing container enters the opening, and it is easy to wrap around the position of the 〇-shaped ring of the sealing portion, causing damage to the 0-ring. The problem that the replacement life of the particles or the 0-ring is shortened. In view of the above problems, the plasma processing apparatus of the present embodiment is such that the window member -38 - 201207885 210 is provided with a protruding portion 211 whose size is almost the same as the size of the opening 201 of the side wall lb. That is, the opening 201 and the protruding portion 21 1 are fitted with a slight gap at almost no gap. Therefore, the arrangement position of the plasma from the plasma generation space S in the processing container 1 to the outer side of the opening 201 of the opening 201 can be effectively prevented. That is, the protruding portion 211 of the window member 210 has a function of preventing plasma from intruding into the opening 201. Therefore, it is possible to effectively prevent the plasma from being wound into the sealing portion via the opening 201, and the 〇-ring 205 is damaged and deteriorated to generate particles, or the replacement period is advanced. Further, the front end surface 211a of the protruding portion 211 is formed by bending together with the curvature of the inner peripheral surface 1bIN of the side wall 1b of the cylindrical processing container 1. With such a characteristic shape, in a state where the window member 210 is attached to the side wall 1b, no step is generated between the inner peripheral surface lbIN of the side wall lb and the window member 210. Thus, since there is no step difference, it is possible to prevent the plasma generated by the plasma generation space S in the processing container 1 from being affected, for example, the diffusion or distribution of the plasma is changed, and the plasma density is changed. Thereby, the treated body in the processing container 1 can be uniformly subjected to a stable plasma treatment. As described above, according to the plasma processing apparatus 100 of the present embodiment, generation of particles from the viewport 200 can be reduced. Further, the configuration of the viewport 200 of the present embodiment is applied to the plasma processing apparatuses of the first to sixth embodiments, and it is possible to comprehensively prevent the occurrence of particles in the processing container 1 and to generate stable electricity. The slurry is used for plasma processing, so that a highly reliable semiconductor process can be realized. Other configurations and effects of the present embodiment are the same as those of the first to sixth embodiments. -39-201207885 [Abrasion Test] Next, the results of the abrasion test after evaluating the durability of the polyimide film 70 used in the plasma processing apparatus of the fifth and sixth embodiments will be described. As shown in FIG. 20A and FIG. 20B, an evaluation apparatus is provided which is provided with a metal block 90 which is a support portion 13a of the cover member 13, and a movable quartz plate 91 which is a dielectric plate 28. . Then, a polyimine tape 70 having a thickness of 80 μm is attached to either of the block 90 or the quartz plate 91. In addition, a kapton tape (Kapton is a registered trademark) manufactured by Teraoka Seisakusho Co., Ltd. was used as the polyimide tape 70. Fig. 20A shows a state in which the adhesive layer 70B of the polyimide tape 70 is attached to the block 90, and Fig. 20B shows a state in which the adhesive layer 70B of the polyimide tape 70 is attached to the quartz plate 91. Then, the block 90 is brought close to the quartz plate 91, and the polyimide tape 70 is pressure-bonded from the both sides at a pressure of 280,000 N on the opposite side, and the quartz plate 91 is rotated 60,000 times by a round trip amount of 1 mm. Move in the left and right direction in Figs. 20A, 20B. The thickness of the polyimide tape 70 in the test was measured for the three samples, and the surface roughness of the polyimide tape 70 was measured by a surface roughness measuring instrument (SJ301 manufactured by Mitutoyo Co., Ltd.). The relationship between the number of movements of the quartz plate 91 and the thickness of the polyimide tape 70 is shown in Figs. 21 and 22 . Fig. 21 shows the result of attaching the adhesive layer 70B of the polyimide tape 70 to the block 90, and Fig. 22 shows the case where the adhesive layer 70B of the polyimide tape 70 is attached to the quartz plate 91. As is apparent from Fig. 21, when the adhesive layer 70B of the polyimide tape 70 is attached to the block 90, the thickness of the polyimide tape 70 hardly changes after 60,000 reciprocating movements. And, the surface is thick

S -40- 201207885 度的測定，聚醯亞胺膠帶70、塊材90及石英板91皆於表面 未產生表面粗糙等。另一方面，由圖22可知，在將聚醯亞 胺膠帶7〇的黏著層70B貼附於石英板91時，在1萬次程度的 往復移動下可見聚醯亞胺膠帶70的膜厚減少。並且，在表 面粗度的測定，在聚醯亞胺膠帶70及塊材90的表面可見擦 傷，擔心產生微粒。 由以上的結果可知，在第5及第6實施形態中，作爲間 隔件60C使用的聚醯亞胺膠帶70是貼附於蓋構件13的支撐 部13a要比貼附於介電質板28來得理想。 [氮化運行試驗] 其次，說明有關使用與第5及第6實施形態同樣構成的 電漿處理裝置來針對30，0 00片的晶圓W進行電漿氮化處理 的運行試驗的結果。本運行試驗是針對晶圓W間的氮濃度 的均一性、微粒數、污染、介電質板與蓋構件的支撐部的 間隙進行評價。對晶圓W表面的矽之電漿氮化處理的條件 是以處理壓力·，30Pa、Ar流量；660mL/min ( seem) 、N2 流量；200mL/min( seem)、微波功率；1950W、處理溫 度500°C、處理時間50秒來實施。並且，使用株式會社寺 岡製作所製的Kapton®膠帶（Kapton®爲註冊商標；厚度 80μη〇作爲聚醯亞胺膠帶70。 首先，計測對3 0,000片的晶圓W之處理前後的介電質 板28與蓋構件13的支撐部13a的間隙d。其結果，間隙d是 處理前爲80.4μηι，處理後爲80·9μηι。因此，藉由介在聚醯 -41 - 201207885 亞胺膠帶70，可使介電質板28與蓋構件13的支撐部13a的 間隙d長期間幾乎維持於一定。 在圖23顯示晶回W間的氮濃度的均一性的結果。由此 結果可知，在3 0,000片的處理中，氮濃度是在大致0.2〜 0.4 [atom%]之間安定地推移，晶圓W間的處理的均一性可 期。 在圖24顯示以微粒計數器所計測之0.12 μπι以上的大小 的微粒數的推移。由此結果可知，經30,000片的處理，所 被檢測出的微粒數是大致5個以下。未見聚醯亞胺膠帶70 本身或介電質板28與蓋構件13的支撐部13a的摩擦所引起 的微粒發生。另外，雖在第1 5,000片的計測結果有10個以 上的微粒被檢測出，但這測定誤差的可能性高。 圖 25 及圖 26 是表示 Li、Na、Mg、Al、K、Ca、Ti、Cr 、Mn、Fe、Ni，Co、Zn、及Cu的污染結果。由此結果未 見，經由30,000片的處理，一旦處理片數增加，污染也增 加之類的相關關係。這可想像是因爲藉由存在聚醯亞胺膠 帶70，可防止介電質板28與蓋構件13的支撐部13a的摩擦 的結果，來自蓋構件1 3的污染發生會被抑制》 以上是以舉例顯示的目的來詳細說明本發明的實施形 態，但本發明並非限於上述實施形態，亦可實施各種的變 形。例如，在上述實施形態是使用RLS A方式的電漿處理 裝置100，但亦可使用其他方式的電漿處理裝置，例如感 應耦合電漿（ICP )、表面波電漿（SWP )等方式的電漿 處理裝置》 -42- 201207885 並且，在上述實施形態中是舉以半導體晶圓作爲被處 理體的電漿氮化處理爲例來進行說明，但作爲被處理體的 基板亦可例如爲FPD (平板顯示器）用的基板或太陽電池 用基板等。 本國際申請案是根據2010年3月31日申請的日本國特 許出願2010-81984號及2010年9月30日申請的日本國特許 出願201 0-22 1 270號來主張優先權者，將該等申請案的全 內容援用於此。 【圖式簡單說明】 圖1是表示本發明之一實施形態的電漿處理裝置的構 成例的槪略剖面圖。 圖2是表示平面天線的構造圖面。 圖3是表示控制部的構成說明圖。 圖4是擴大詳細顯示第1實施形態的電漿處理裝置的介 電質板與蓋構件的支撐部的連接部分的部分剖面圖。 圖5是卸下第1實施形態的電漿處理裝置的介電質板來 部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖。 圖6是擴大詳細顯示第2實施形態的電漿處·理裝置的介 電質板與蓋構件的支撐部的連接部分的部分剖面圖。 圖7是卸下第2實施形態的電漿處理裝置的介電質板來 部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖。 圖8是卸下第3實施形態的電漿處理裝置的介電質板來 部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖》 -43- 201207885 圖9是卸下第3货施形態的電漿處理裝置的介電質板來 部分地擴大詳細顯示蓋構件的端面及上面的其他部分剖面 圖。 圖10是擴大詳細顯示第4實施形態的電漿處理裝置的 介電質板與蓋構件的支撐部的連接部分的部分剖面圖。 圖11是卸下第4實施形態的電漿處理裝置的介電質板 來部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖 〇 圖12是擴大詳細顯示第4實施形態的變形例的電漿處 理裝置的介電質板與蓋構件的支撐部的連接部分的部分剖 面圖。 圖13是擴大詳細顯示第5實施形態的電漿處理裝置的 介電質板與蓋構件的支撐部的連接部分的部分剖面圖。 圖14是卸下第5實施形態的電漿處理裝置的介電質板 來部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖 〇 圖15是說明使用於第5實施形態的聚醯亞胺膠帶的構 成剖面圖。 圖1 6是擴大詳細顯示第5實施形態的變形例的電漿處 理裝置的介電質板與蓋構件的支撐部的連接部分的部分剖 面圖。 圖1 7是卸下第5實施形態的變形例的電漿處理裝置的 介電質板來部分地擴大詳細顯示蓋構件的端面及上面的部 分剖面圖。 -44- 201207885 圖18是擴大詳細顯示第6實施形態的電漿處理裝置的 介電質板與蓋構件的支撐部的連接部分的部分剖面圖。 圖19是卸下第6實施形態的電漿處理裝置的介電質板 來部分地擴大詳細顯示蓋構件的端面及上面的部分剖面圖 〇 圖20A是供以說明將聚醯亞胺膠帶貼附於塊材側的磨 耗試驗的圖面。 圖2 0B是供給說明將聚醯亞胺膠帶貼附於石英板側的 磨耗試驗的圖面。 圖2 1是表示將聚醯亞胺膠帶貼附於塊材側時的磨耗試 驗的評價結果的圖表。 圖22是表示將聚醯亞胺膠帶貼附於石英板側時的磨耗 試驗的評價結果圖表。 圖2 3是表示電漿氮化處理的運行試驗的晶圓間的氮濃 度的均一性的結果的圖表。 圖24是表示電漿氮化處理的運行試驗的微粒數的測定 結果的圖表。 圖25是表示電漿氮化處理的運行試驗的污染測定結果 的圖表。 圖2 6是表示電漿氮化處理的運行試驗的污染測定結果 的別的圖表。 圖27是表示本發明的第7實施形態的電漿處理裝置的 構成例的槪略剖面圖。 圖2 8是表示視口的構成構件的狀態擴大圖。 -45- 201207885 圖2 9是表示視口附近的水平剖面的要部擴大剖面圖 【主要元件符號說明】 1 :處理容器 la :底壁 1 b :側壁 1 bIN :內周面 2 :載置台 3 :支持構件 4 :罩構件 5 :加熱器 5a :加熱器電源 6 :熱電偶 7 :襯裡 8 :擋板 8a :排氣孔 9 :支柱 1 〇 :開口部 1 1 :排氣室 1 2 :排氣管 1 3 :蓋構件 1 3 a :支持部 13b :角部 1 3 c :壁面 -46- 201207885 1 4 :密封構件 1 5 :氣體導入部 16 :搬入出口 1 7 :閘閥 1 8 :氣體供給裝置 1 9 a :稀有氣體供給源. 19b :氮氣體供給源 20a、20b、20c :氣體路線 2 1 a、2 1 b :質量流控制器 2 2 a、2 2 b :開閉閥 24 :排氣裝置 27 :微波導入裝置 28 :介電質板 28A :介電質板 28a :壁面 28b :缺口部 29a : Ο型環 2 9b: Ο型環 3 1 :平面天線 32 :微波放射孔 3 3 :緩波材 34 :金屬製罩構件 34a :冷卻水流路 3 5 :密封構件 -47 201207885 3 6 :開口部 3 7 :導波管 37a :同軸導波管 37b :矩形導波管 3 8 :匹配電路 39 :微波產生裝置 40 :模式變換器 4 1 :內導体 5 0 :控制部 5 1 :製程控制器 5 2 :使用者介面 5 3 :記憶部 60 :間隔件 6 0 A :間隔件 6 0 B :間隔件 6 0 C :間隔件 70 :聚醯亞胺膠帶 70A :聚醯亞胺薄膜層 70B :黏著層 80 : 0型環 90 :塊材 91 :石英板 100 :電漿處理裝置 101 :電漿處理裝置 -48 201207885 131,132 :安裝溝 132A :安裝溝 200 :視口 2 0 1 :開口 203 ：溝 205 ： Ο型環 2 1 0 :窗構件 2 1 1 :突出部 21 la :前端面 21 3 :基部 220 :固定板 221 :凹部 22 3 :貫通開口 220 :固定板 W :晶圓 d :間隙 S :電漿生成空間 -49For the measurement of S - 40 - 201207885 degrees, the polyimide film 70, the block 90 and the quartz plate 91 were not roughened on the surface. On the other hand, as shown in Fig. 22, when the adhesive layer 70B of the polyimide tape 7 is attached to the quartz plate 91, the film thickness of the polyimide tape 70 is reduced by the reciprocating movement of about 10,000 times. . Further, in the measurement of the surface roughness, scratches were observed on the surfaces of the polyimide tape 70 and the block 90, and it was feared that particles were generated. As a result of the above, in the fifth and sixth embodiments, the polyimide tape 70 used as the spacer 60C is attached to the support member 13a of the cover member 13 than to be attached to the dielectric plate 28. ideal. [Nitriding operation test] Next, a result of an operation test for plasma nitriding treatment of 30, 000 wafers W using the plasma processing apparatus having the same configuration as that of the fifth and sixth embodiments will be described. This operation test evaluated the uniformity of the nitrogen concentration between the wafers W, the number of particles, the contamination, and the gap between the dielectric plate and the support portion of the cover member. The conditions for the plasma nitriding treatment of the surface of the wafer W are treatment pressure, 30 Pa, Ar flow rate; 660 mL/min (where), N2 flow rate; 200 mL/min (see), microwave power; 1950 W, treatment temperature It was carried out at 500 ° C for 50 seconds. In addition, Kapton® tape manufactured by Teraoka Seisakusho Co., Ltd. (Kapton® is a registered trademark; thickness 80 μη〇 is used as the polyimide tape 70. First, the dielectric plate 28 before and after the treatment of 300 W wafers W is measured. The gap d between the support portion 13a and the support portion 13a of the cover member 13. As a result, the gap d is 80.4 μm before the treatment and 80·9 μηι after the treatment. Therefore, by interposing on the poly-41-201207885 imide tape 70, The gap between the electric plate 28 and the support portion 13a of the lid member 13 is kept constant for a long period of time. Fig. 23 shows the result of the uniformity of the nitrogen concentration between the crystal returns W. From this result, it is understood that the treatment at 300,000 sheets is obtained. In the middle, the nitrogen concentration is stably shifted between approximately 0.2 to 0.4 [atom%], and the uniformity of the processing between the wafers W is expected. Fig. 24 shows the number of particles having a size of 0.12 μm or more measured by the particle counter. As a result, it was found that the number of particles to be detected was approximately 5 or less after 30,000 treatments. The polyimide tape 70 itself or the support portion 13a of the dielectric plate 28 and the cover member 13 was not observed. Particle generation caused by friction In addition, although 10 or more microparticles were detected in the measurement result of the 15,000th sheet, the possibility of measurement error is high. Fig. 25 and Fig. 26 show Li, Na, Mg, Al, K, Ca, Ti. The result of contamination of Cr, Mn, Fe, Ni, Co, Zn, and Cu. The result is not seen, and after 30,000 sheets of treatment, once the number of sheets is increased, the pollution is also increased. This is conceivable. Since the polyimide plate 28 can be prevented from rubbing against the support portion 13a of the cover member 13 by the presence of the polyimide tape 70, the occurrence of contamination from the cover member 13 can be suppressed. The embodiment of the present invention will be described in detail, but the present invention is not limited to the above embodiment, and various modifications may be made. For example, in the above embodiment, the plasma processing apparatus 100 of the RLS A type is used, but other methods may be used. A plasma processing apparatus, for example, a plasma processing apparatus such as an inductively coupled plasma (ICP) or a surface wave plasma (SWP). Further, in the above embodiment, a semiconductor wafer is used as a processed object. of The plasma nitriding treatment is described as an example. However, the substrate to be processed may be, for example, a substrate for an FPD (flat panel display) or a substrate for a solar battery. The international application is filed on March 31, 2010. Japan's privileged Japanese Patent Application No. 2010-81984 and Japan's privileged application No. 201 0-22 1 270, which was filed on September 30, 2010, claim the priority, and the entire contents of these applications are hereby applied. Brief Description of the Drawings Fig. 1 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a structural view showing a planar antenna. 3 is a view showing the configuration of a control unit. Fig. 4 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to the first embodiment and a support portion of a cover member. Fig. 5 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the first embodiment. Fig. 6 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a second embodiment and a support portion of a cover member. Fig. 7 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the second embodiment. Fig. 8 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed by removing the dielectric plate of the plasma processing apparatus of the third embodiment. -43-201207885 The dielectric plate of the plasma processing apparatus partially expands the cross-sectional view of the end face of the cover member and other portions of the upper surface in detail. Fig. 10 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a fourth embodiment and a support portion of a cover member. FIG. 11 is a partial cross-sectional view showing a portion of the dielectric material sheet of the plasma processing apparatus of the fourth embodiment in which the end surface and the upper surface of the cover member are partially enlarged. FIG. 12 is a perspective view showing a modification of the fourth embodiment. A partial cross-sectional view of a portion of the connection between the dielectric plate of the plasma processing apparatus and the support portion of the cover member. Fig. 13 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a fifth embodiment and a support portion of a cover member. Fig. 14 is a partial cross-sectional view showing a portion of the dielectric material sheet of the plasma processing apparatus of the fifth embodiment in which the end surface and the upper surface of the cover member are partially enlarged. Fig. 15 is a view showing the use of the second embodiment. A cross-sectional view of the structure of the amine tape. Fig. 16 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a modification of the fifth embodiment and a support portion of a cover member. Fig. 17 is a partial cross-sectional view showing the end surface and the upper surface of the detailed display cover member partially enlarged by removing the dielectric plate of the plasma processing apparatus according to the modification of the fifth embodiment. -44-201207885 Fig. 18 is a partial cross-sectional view showing the connection portion between the dielectric plate of the plasma processing apparatus of the sixth embodiment and the support portion of the lid member in an enlarged manner. Fig. 19 is a partial cross-sectional view showing the end surface and the upper surface of the detailed display cover member partially removed by removing the dielectric plate of the plasma processing apparatus of the sixth embodiment. Fig. 20A is a view for attaching the polyimide tape to explain The drawing of the abrasion test on the block side. Fig. 20B is a view showing the abrasion test for attaching the polyimide tape to the side of the quartz plate. Fig. 21 is a graph showing the evaluation results of the abrasion test when the polyimide tape is attached to the block side. Fig. 22 is a graph showing the results of evaluation of the abrasion test when the polyimide tape is attached to the quartz plate side. Fig. 23 is a graph showing the results of the uniformity of the nitrogen concentration between wafers in the operation test of the plasma nitriding treatment. Fig. 24 is a graph showing the results of measurement of the number of particles in the operation test of the plasma nitriding treatment. Fig. 25 is a graph showing the results of contamination measurement in the operation test of the plasma nitriding treatment. Fig. 26 is a graph showing the results of contamination measurement in the operation test of the plasma nitriding treatment. Fig. 27 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus according to a seventh embodiment of the present invention. Fig. 28 is an enlarged view showing a state of a constituent member of the viewport. -45- 201207885 Figure 2 9 is an enlarged cross-sectional view of the main section showing the horizontal section near the viewport. [Main component symbol description] 1 : Processing container la : bottom wall 1 b : side wall 1 bIN : inner peripheral surface 2 : mounting table 3 : Support member 4 : Cover member 5 : Heater 5a : Heater power supply 6 : Thermocouple 7 : Lining 8 : Baffle 8a : Vent hole 9 : Pillar 1 〇 : Opening 1 1 : Exhaust chamber 1 2 : Row Air pipe 1 3 : cover member 1 3 a : support portion 13b : corner portion 1 3 c : wall surface - 46 - 201207885 1 4 : sealing member 1 5 : gas introduction portion 16 : carry-in port 1 7 : gate valve 1 8 : gas supply Device 1 9 a : supply of rare gas. 19b : supply of nitrogen gas source 20a, 20b, 20c: gas route 2 1 a, 2 1 b : mass flow controller 2 2 a, 2 2 b : opening and closing valve 24: exhaust Device 27: Microwave introduction device 28: Dielectric plate 28A: Dielectric plate 28a: Wall surface 28b: Notch portion 29a: Cylinder ring 2 9b: Cylinder ring 3 1 : Planar antenna 32: Microwave radiation hole 3 3 : Slow Wave material 34: metal cover member 34a: cooling water flow path 3 5 : sealing member -47 201207885 3 6 : opening portion 3 7 : waveguide 37a: coaxial waveguide 37b: rectangular waveguide 3 8 : matching Circuit 39: Microwave generating device 40: Mode converter 4 1 : Inner conductor 5 0 : Control unit 5 1 : Process controller 5 2 : User interface 5 3 : Memory portion 60 : Spacer 6 0 A : Spacer 6 0 B: spacer 60 C: spacer 70: polyimide tape 70A: polyimide film layer 70B: adhesive layer 80: 0-ring 90: block 91: quartz plate 100: plasma processing apparatus 101: Plasma processing apparatus-48 201207885 131,132 : mounting groove 132A : mounting groove 200 : view port 2 0 1 : opening 203 : groove 205 : Ο type ring 2 1 0 : window member 2 1 1 : protruding portion 21 la : front end face 21 3: base 220: fixing plate 221: recess 22 3 : through opening 220: fixing plate W: wafer d: gap S: plasma generation space - 49

Claims (1)

201207885 七、申請專利範圍： 1. 一種電漿處理裝置，係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 P ； 介電質板，其係堵住上述電漿處理空間的上部； 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部； 密封構件，其係設於上述支撐部與上述介電質板之間 ，用以密閉上述電漿處理空間：及 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙。 2. 如申請專利範圍第1項之電漿處理裝置，其中，上 述間隔件係斷續性地設於上述密封構件的外周側。 3. 如申請專利範圍第1項之電漿處理裝置，其中，上 述間隔件係由氟系樹脂或聚醯亞胺系樹脂所形成。 4. 如申請專利範圍第1項之電漿處理裝置，其中，上 述間隔件係具備聚醯亞胺薄膜層及黏著層之聚醯亞胺膠帶 〇 5 .如申請專利範圍第4項之電漿處理裝置，其中，上 述間隔件的上述黏著層係被貼附於上述支撐部而固定。 6 ·如申請專利範圍第1項之電漿處理裝置，其中，上 述密封構件包含：第1密封構件、及設於該第1密封構件的 內周側的第2密封構件。 7.如申請專利範圍第6項之電漿處理裝置，其中，上 S -50- 201207885 述第1密封構件係由氟系樹脂所形成。 8. 如申請專利範圍第7項之電漿處理裝置，其中，上 述第2密封構件係由耐電漿性比上述第1密封構件高的氟系 樹脂所形成。 9. 如申請專利範圍第1項之電漿處理裝置，其中，上 述密封構件係具有：第1部分、及設於該第1部分的內周側 的第2部分，上述第1部分係藉由真空密封性比上述第2部 分高的材質所構成，上述第2部分係藉由電漿耐性比上述 第1部分高的材質所構成。 10. 如申請專利範圍第9項之電漿處理裝置，其中，藉 由上述間隔件所形成之上述支撐部的上面與上述介電質板 的下面之間的間隙爲0.05〜0.4mm的範圍內。 11. 如申請專利範圍第9項之電漿處理裝置，其中，藉 由上述間隔件所形成之上述支撐部的上面與上述介電質板 的下面之間的間隙爲0.0 5〜0.2mm的範圍內。 12. 如申請專利範圍第9項之電漿處理裝置，其中，藉 由上述間隔件所形成之上述支撐部的上面與上述介電質板 的下面之間的間隙爲0.05〜0.08mm的範圍內。 1 3 .如申請專利範圍第丨項之電漿處理裝置，其中，上 述間隔件與上述密封構件的間隔爲1〜1 0mm的範圍內。 14. 如申請專利範圍第丨項之電漿處理裝置，其中，在 上述蓋構件的內周的壁面與上述介電質板的外周側壁之間 形成有〇 · 1〜1 m m的範圍內的間隙。 15. 如申請專利範圍第14項之電漿處理裝置，其中， -51 - 201207885 藉由上述間隔件來將上述介電質板定位於水平方向。 16. —種電漿處理方法，係使用電漿處理裝置來電漿 處理被處理體，該電漿處理裝置係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 □; 介電質板，其係堵住上述電漿處理空間的上部； 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部； 密封構件，其係設於上述支撐部與上述介電質板之間 ，用以密閉上述電漿處理空間；及 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙。 17. 如申請專利範圍第16項之電漿處理方法，其中， 上述密封構件係具有：第1部分、及設於該第1部分的內周 側的第2部分，上述第1部分係藉由真空密封性比上述第2 部分高的材質所構成，上述第2部分係藉由電漿耐性比上 述第1部分高的材質所構成。 18. 如申請專利範圍第16項之電漿處理方法，其中， 藉由上述間隔件所形成之上述支撐部的上面與上述介電質 板的下面之間的間隙爲〇·〇5〜0.2mm的範圍內。 19. 如申請專利範圍第16項之電漿處理方法，其中， 藉由上述間隔件所形成之上述支撐部的上面與上述介電質 板的下面之間的間隙爲〇.〇5〜〇.〇8mm的範園內》 20. 如申請專利範圍第16項之電漿處理方法，其中， -52- 201207885 上述間隔件與上述密封構件的間隔爲1〜1 〇mm的範圍內。 21. —種電漿處理裝置，係具備： 處理容器，其係於內部具有電漿處理空間，且上部開 P ； 介電質板，其係堵住上述電漿處理空間的上部； 蓋構件，其係配置於上述處理容器的上部，且具有支 撐上述介電質板的外周部之環狀的支撐部： 密封構件，其係設於上述支撐部與上述介電質板之間 ，用以密閉上述電漿處理空間； 間隔件，其係設於上述密封構件的外周側，在上述支 撐部與上述介電質板之間形成間隙；及 觀察窗，其係用以辨識上述處理容器的內部， 上述觀察窗係具有： 透明的窗構件，其係具備被插入形成於上述處理容器 的側壁的觀察用開口部內的突出部； 固定構件，其係由外部來固定上述窗構件； 密封構件，其係於上述觀察用開口部的周圍氣密地密 封上述處理容器的側壁與上述窗構件之間， 上述觀察用開口部的內面與上述突出部的表面係形成 以該突出部能夠插入上述觀察用開口部的範圍內的間距來 無間隙嵌合， 將上述突出部插入上述觀察用開口部，藉此使上述窗 構件安裝於上述處理容器的側壁。 22. 如申請專利範圍第21項之電漿處理裝置，其中， -53- 201207885 上述突出部的前端面係配合上述處理容器的側壁的內壁面 的形狀來彎曲形成。 2 3.如申請專利範圍第21項之電漿處理裝置，其中， 上述突出部的表面與上述觀察用開口部的內面的間距爲 0.1mm〜2mm的範圍內。 S -54-201207885 VII. Patent application scope: 1. A plasma processing device, comprising: a processing container having a plasma processing space inside, and an upper part opening P; a dielectric plate, which blocks the plasma processing space a cover member disposed on an upper portion of the processing container and having an annular support portion that supports an outer peripheral portion of the dielectric plate; and a sealing member that is coupled to the support portion and the dielectric plate The plasma processing space is sealed between the spacer and the spacer, and is provided on the outer peripheral side of the sealing member, and a gap is formed between the support portion and the dielectric plate. 2. The plasma processing apparatus according to claim 1, wherein the spacer is intermittently provided on an outer peripheral side of the sealing member. 3. The plasma processing apparatus according to claim 1, wherein the spacer is formed of a fluorine resin or a polyimide resin. 4. The plasma processing apparatus according to claim 1, wherein the spacer is a polyimide film having a polyimide film layer and an adhesive layer. 5. The plasma of claim 4 In the processing apparatus, the adhesive layer of the spacer is attached to the support portion and fixed. The plasma processing apparatus according to the first aspect of the invention, wherein the sealing member comprises: a first sealing member; and a second sealing member provided on an inner circumferential side of the first sealing member. 7. The plasma processing apparatus according to the sixth aspect of the invention, wherein the first sealing member is formed of a fluorine-based resin in the above S-50-201207885. 8. The plasma processing apparatus according to the seventh aspect of the invention, wherein the second sealing member is formed of a fluorine-based resin having a higher plasma resistance than the first sealing member. 9. The plasma processing apparatus according to claim 1, wherein the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, wherein the first portion is The vacuum sealing property is higher than the material of the second portion, and the second portion is made of a material having higher plasma resistance than the first portion. 10. The plasma processing apparatus of claim 9, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.4 mm . 11. The plasma processing apparatus of claim 9, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.2 mm Inside. 12. The plasma processing apparatus of claim 9, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.08 mm . The plasma processing apparatus according to claim 3, wherein the interval between the spacer and the sealing member is in a range of 1 to 10 mm. 14. The plasma processing apparatus according to claim 2, wherein a gap in a range of 〇·1 to 1 mm is formed between a wall surface of the inner periphery of the cover member and an outer peripheral side wall of the dielectric plate . 15. The plasma processing apparatus of claim 14, wherein -51 - 201207885 is to position the dielectric plate in a horizontal direction by the spacer. 16. A plasma processing method for processing a processed object by using a plasma processing apparatus, the plasma processing apparatus comprising: a processing container having a plasma processing space inside, and an upper opening; a dielectric a plate that blocks an upper portion of the plasma processing space; a cover member disposed at an upper portion of the processing container and having an annular support portion that supports an outer peripheral portion of the dielectric plate; and a sealing member And a gap between the support portion and the dielectric plate for sealing the plasma processing space; and a spacer disposed on an outer peripheral side of the sealing member, and the support portion and the dielectric plate A gap is formed between them. 17. The plasma processing method according to claim 16, wherein the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, wherein the first portion is The vacuum sealing property is higher than the material of the second part, and the second part is made of a material having higher plasma resistance than the first part. 18. The plasma processing method of claim 16, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is 〇·〇5 to 0.2 mm In the range. 19. The plasma processing method of claim 16, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is 〇.〇5~〇. 〇8mm的范园内 20. The plasma processing method of claim 16, wherein -52-201207885 the spacing between the spacer and the sealing member is in the range of 1 to 1 〇 mm. 21. A plasma processing apparatus comprising: a processing vessel having a plasma processing space therein, and an upper portion P; a dielectric plate blocking an upper portion of the plasma processing space; a cover member, The utility model is disposed on an upper portion of the processing container and has an annular support portion for supporting an outer peripheral portion of the dielectric plate: a sealing member is disposed between the support portion and the dielectric plate for sealing a plasma processing space; a spacer disposed on an outer peripheral side of the sealing member, forming a gap between the support portion and the dielectric plate; and an observation window for identifying an inside of the processing container The observation window includes: a transparent window member having a protruding portion inserted into an observation opening formed in a side wall of the processing container; a fixing member that fixes the window member from the outside; and a sealing member Between the side wall of the processing container and the window member, the inner surface of the observation opening and the protrusion are hermetically sealed around the observation opening The surface of the portion is formed without a gap by a pitch in which the protruding portion can be inserted into the observation opening, and the protruding portion is inserted into the observation opening to mount the window member to the processing container. Side wall. 22. The plasma processing apparatus according to claim 21, wherein -53-201207885 the front end surface of the protruding portion is curved and formed in accordance with a shape of an inner wall surface of a side wall of the processing container. The plasma processing apparatus according to claim 21, wherein a distance between a surface of the protruding portion and an inner surface of the observation opening is in a range of 0.1 mm to 2 mm. S -54-
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