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TW201207138A - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
TW201207138A
TW201207138A TW100114671A TW100114671A TW201207138A TW 201207138 A TW201207138 A TW 201207138A TW 100114671 A TW100114671 A TW 100114671A TW 100114671 A TW100114671 A TW 100114671A TW 201207138 A TW201207138 A TW 201207138A
Authority
TW
Taiwan
Prior art keywords
substrate
axis
rotating shaft
gear
film forming
Prior art date
Application number
TW100114671A
Other languages
Chinese (zh)
Inventor
Shinji Kohari
Hiroki Yamamoto
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201207138A publication Critical patent/TW201207138A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225Oblique incidence of vaporised material on substrate

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a deposition apparatus capable of improving the film thickness distribution of a substrate having an uneven portion. The deposition apparatus 1 makes it possible that a substrate W onto a stage 11 can spin axially about a first axis Z1 and revolve around a second axis Z2. Thereby, the free degree of variation of relative position between a substrate W and a film forming source 12 can be increased. The film thickness does not deoend on a radius position of the substrate W but can be maintained uniformly anywhere on the substrate. By using the deposition apparatus 1, with respect to the surface of the substrate W having an uneven portion, the improvement of film thickness distribution against the side surface of said uneven portion can be achieved.

Description

201207138 六、發明說明: 【發明所屬之技術領域】 凸部的基板之表面上均 本發明係有關一種可在具有凹 一地形成薄膜之成膜裝置。 【先前技術】 近年來提案有各種用於在基板的表面以均一的膜厚形 膜;置。例如在以下的專利文獻]中記載有-U“ ’其係具有可對基板表面以傾斜方向配置成對 向的射度把、以及用以使基板固定器繞著基板的中心周圍 來旋轉的固定器馬達,且—邊使基板旋轉-邊使蒸鍍粒子 從斜方向朝基板表面射入。 先前技術文獻 專利文獻 專利文獻1 :特開2008— 103026號公報 【發明内容】 發明所欲解決之課題 上述構成的濺鍍裝置中,雖對要改善基板上之較千该 區域的膜厚分布有很大的效果,卻對具有凹凸部的基板表 面來說,仍然無法達成改善膜厚分布之問題。亦即,爹媾 造層在基板表面是呈島狀分布的情況下,會因基板的半徨 位置而異’而在構造層的側面形成有不同的膜厚分布,# 常難以確保所要求的臈厚均一性。 本發明係有鑒於上述之問題點而發明者,目的在於提 供一種可達成改善具有凹凸部的基板表面之膜厚分布的成 膜裝置。 解決課題之手段 4/J4 201207138 為達成上述目的,本發明之一形態的成膜裝置係具備 ,:腔,(chamber)、工作平台(stage)、第}旋轉轴、成膜 源、弟2旋轉轴、驅動源、及旋轉傳動機構。 上述工作平台係用以支撐基板,設置在上述腔室的内 部。上述第1旋轉軸係可使上述工作平台繞著通過上述工 作平台上之第1軸周圍旋轉。 上边成膜源係使成膜粒子從斜方向朝上述工作平台上 的上述基板來射入。 上述第2旋轉㈣沿著和上述第!軸平行的第2轴而 配列,且與上述第ί軸相隔有第丨距離。 上述驅動源可使上述第1旋轉軸及上述第2旋轉轴繞 著各自的軸周圍旋轉。 Τ ^ 上述旋轉傳動機構係設置在上述第】旋轉軸與上述第2 旋,轴之間,使上述工作平台繞著上述第2轴周圍旋轉·。 【實施方式】 本發明的其中一實施形態之成膜裝置係具備:腔室、 工作平台、第!旋轉軸、成膜源、第2旋轉 及旋轉傳動機構。 愿 上述工作平台係用以支偉基板,設置在上述腔室的内 t上述第】旋轉軸係使上述工作平台繞著通過上述工作 平口上之上述基板的中心之第丨軸來旋轉。 上述成卿敍成_子從斜方_上述 的上述基板來射入。 卞σ上 配列上=2旋轉軸係沿著和上述第1軸平行的第2軸而 ' 人上述第1軸相隔有第1距離。 上述驅動源可使上述第!旋轉轴及上述第2旋轉树 5/14 201207138 著各自的軸周園旋轉。 _1:轉==設置在上梅與上述第 。 作平台繞著上述第⑽周園來旋轉 上述成膜裝置中,1 圍自轉及繞著第2_ 繞著第】轴周 源之相對位置變化的=此呵提南基板對成膜 ^ ^ ^ ^ ^ ^ ^ ^ ^ 4 ^ ^ ,,7 ϋ ^ ^ ^ ^^ ^ ^ ^ =二部的基板表面來改善 置的=膜==方式來決定,例如,在續裝 情況下,為成__;4_ ^續裝置的 可設置複數個。上述成膜粒子、成、===,亦 材料之粒子,例如,在峨的情成膜 由蒸發源所生相《材料之蒸=^情況下,則為藉 固定部’且可在正交於二= -VO者上述弟2旋轉軸周圍來旋轉。 面 當中膜相源·射的成膜粒子 上。亦即,件之 之腔室内部的污染之附著防止板。興此由子所引起 慎朝腔室内壁面附著而可提高腔室的曰洗淨效^成齡子不 201207138 上述旋轉傳動機構係具有第1齒輪、第2齒輪及第3 齒輪。上述第1齒輪係設置於上述第丨旋轉軸的周圍。上 述第2齒輪係具有上述第2旋轉軸所貫穿的貫穿孔,且固 定方'上述腔室。上述第3齒輪係配置在上述第】齒輪與上 述第2齒輪之間。 、 根據此構成,工作平台既可藉由板構件之旋轉而一邊 圍來作公轉,—邊受到繞著第2齒輪周圍旋 11 r奴旋轉力而繞著第1 _圍來旋轉。藉此, 基:進的單-驅梅使工作平台上的 部側、祕表面之凹凸部的高度、凹凸 時,可設為大於等於二在將基板的半徑設為: _ 乂迻圖式一邊說明本發明的實施形態。 的主二不本發明的其中—實施形態之成膜裝置 j王要構件之立體圖。 側視圖。本*施^ 述成的主要構件之 室ίο、工作^ 的成膜裝置1為麟裝置,其具有腔 γ轴表示相互正° 陰極12。此外,圖中的X軸及 互正交的垂直^ 平方向,2軸表示與Χ轴及γ轴相 排氣於未料喊空減泵,可使内部真空 供給源,麵$外,腔室1Q亦連接於未圖示的氣體 朝腔室10的内部導入規定的處理λ胃 在腔室Κ)的外部^體、氧等之反應性氣體)。再者,用 成在腔室的周辟:、内部之間用以存取基板W的開口係形 α 土,且用以開閉該開口的閘閥係設置在上述 7/14 201207138 周壁。 工作平台〗〗係圓板形狀,其表面係可水平地支撐基板 w的支撐面。雖未圖示,但是工作平台丨〗係具有固定基板 w的卡盤機構(例如機械式卡盤)。本實施形態中,工作平 台丨1雖形成和基板W大致同等的大小,但當然未受此所 限。 本貧施形態中 岛做、、雜使用半導體晶圆,但未受此 所限,玻璃基板,陶曼基板等亦可適用。基板从/的大小未 特別限定。基板W的表面可以是平坦面,㈣可以是構造 層等之凹凸部呈島狀分布的凹凸面。 濺鑛陰極12除了雜革巴(以下僅稱為「革巴」。)ί20以 :卜:還包含:卿20的底板、朝底板施加高頻電力的 尾力單S、以及在㈣表面形成㈣的磁鐵單 賤鑛陰極]2係以把]20的表面和工作平:】 板W的表面呈斜方向,對向地設置於腔:心、么 陰極12係利用在把12〇與基板…二'錢’錢鍍 聚而物射,使從請㈣出氣體的電 之構成材料賴二由請 =以是金屬、合金或此^ 特別限定 材料或樹脂材料。 再者,亦可為陶瓷 本馬施形態的成膜裝置1俦且 :進行讀•礙時4入:;有;' 自公轉單元如,其 自公轉。m Μ 便暴板w在腔室10的内n- 自單心物 22、支拎早70 20係具有:第1碇轉軸21、第h 切工作平台u的板構件C2旋轉軸 吏第2旋轉輛22旋轉 8/14 201207138 的驅動源40、以及和第2旋轉軸22同步旋轉且使第1旋轉 轴21旋轉的旋轉傳動機構3〇。 第1旋轉軸21係固定於工作平台η。第丨旋轉軸2j 你沿著通過被工作平台1!所支撐的基板w的中心〇1 (圖 之第1軸Z1而配置。第】旋轉軸21係可對著板構件5〇 方疋轉且安裝在板構件5〇。 第2旋轉軸22係沿著和第I軸Z1平行且和第丨軸z] 相隔有規定的距離(L)之第2軸22來配置。驅動源4〇係 例如由馬達所構成,且可使第2旋轉軸22繞著第2軸Z2 周圍來旋轉。第2旋轉轴a係插通於氣密性貫通腔室1〇 底部之筒狀導引構件41的内部’在腔室㈣外侧和,驅動 源40連接。 、軸Z1與第2軸Z2之相隔距離(偏移量)L,係因 2被形成在基板Μ表面之凹凸部的高度或凹凸部側面 泉角凹凸邛的配列間距、基板W的半徑(r )、從革巴 成祕子的射人角、基板W#l巴12G之間的距離等 地決定。本實施縣中,偏移w的大小係以基 1、半役r為基準’例如設定大於等於〗./4且小於!*的 摩巳圍。 支^構^ 50係具有將第1旋轉軸21支撑成旋轉自如的 52。牙ϋ、以及被固定於第2旋轉轴22的上端之固定部 轉轴支擇部51係由轴承構件所構成,透過此第1旋 有圓柄1作平台11旋轉自如地被支撐。板構件50具 )狀。第2軸Z2與板構件5〇之交( 設為板構侔心乂茄圖1)被 驅動源,板齡G被設成可藉由 XY平面内繞著第2軸22周圍來旋轉。 9/14 201207138 …=轉傳動機構30係具有約齒輪3】、第2齒輪& 弟)齒輪33 '及收容此等嵩輪的外殼34。 第1齒輪31係安裝於第!旋轉軸2]的,且連同 ^广:轴21 一起旋轉。第2齒輪32係固定於導引構件 * 在其中心部形成有可供第2旋轉軸22貫穿的 二此’可透過導引構件41對固定於腔室川的 才;了: 使弟2碇轉軸22旋轉。第3齒輪33係配置 與第2齒輪32之間,其功能係用來調整工 作平^的自騎•,速度之比的調整齒輪。 料有將第]^轉轴21支稽成旋轉自如的約 、“引構件41支樓成旋轉自如的第2軸承37、 =第3齒輪33的旋轉㈣支撐成旋轉自如的第3轴 於以上所述構成的自公轉單元 構件5。可…面内旋轉。I::: 的支撐部51所讀的第】旋轉軸2]及其上的 11,係繞著第2軸22周圍公轉成以點02為中心之半/L 的圓路徑。 # 一方面’設置於第u走轉轴21的第i齒輪31户、旁 第3齒輪33而和第2齒輪32咬合 二心 m宏於道2丨德处心 σ由方;弟2齒輪32係被 ¥引構件41,所以伴隨著工作平台11之公轉,第^ :輪3】可一舰著旋轉軸21之軸周圍來旋轉,而 輪33可一邊繞著旋轉軸35之軸周圍旋轉,一邊旋轉2 齒輪32的關。如同以上 ^ 第⑽周圍自轉,—邊繞著第 施谢,在工作平台u是以點Μ為中心朝順時鐘方^ 10/14 201207138 =轉的情況下’使工作平台n 向旋轉。 ” 為中心朝逆時鐘方 ^ 工作平台的自轉旋轉數係 轉數及第3齒輪33的齒輪徑等_平自】1的公轉旋 轉旋轉數未特別限定,例如,設為、=工作平台II的公 ,係以工作平台n的自轉旋轉'為^功。本實施形態中 2倍、4倍等)之方式,設定第Sit轉數的偶數倍( 齒輪比。藉此,可使工作平台 八1靖弟1齒輪31之 為相互對應,因而在從工作平么π :^位置和自轉位置成 將基板W的方向(^向面的方°向)始=板W的位置之 學方式檢測基板方二;::定;結果 1喊的基板之移人/移出動作。“Μ之情況下 於本實施形態的成膜裝置 =使工作平台I】上的基板w進行自;It自/公轉單元20 活度,而得以確保不因其靶,0之相對位置變化的靈 分布的均一性 ^的+徑位置差異而改變膜厚 具凹凸能對 厚分布。 术達成改咅该凹凸部側面之膜 備有圓又板在工作平台11的公轉區域* 當中的未被_==:射的_^ 之上。亦PP 4 4 上的粒子係被堆積於板構件50 抑制甴雜粒係作為附著防止板來發揮作用,以 魏 之腔室10内部的污染。藉此,抑制 ^洗淨效率猶室1〇的内壁面附著之情況,可提高腔室 11/14 201207138 再者,根據本實施形態的成膜裝置 口 動源40進行基板w (工作平台⑴之自^=早^驅 ,可簡化自/公轉構造且達成簡易的控制/ “寸。错此201207138 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a film forming apparatus which can form a film in a concave shape. [Prior Art] In recent years, various proposals have been made for a film having a uniform film thickness on the surface of a substrate; For example, in the following patent document, it is described that -U"' has a radiance handle that can be disposed to face the substrate surface in an oblique direction, and a fixing for rotating the substrate holder around the center of the substrate. In the case of rotating the substrate, the vapor-deposited particles are incident on the surface of the substrate from the oblique direction. [Patent Document No. 2008-103026] SUMMARY OF THE INVENTION Problems to be Solved by the Invention In the sputtering apparatus having the above-described configuration, the effect of improving the film thickness distribution in the thousands of regions on the substrate is greatly improved, but the problem of improving the film thickness distribution cannot be achieved for the surface of the substrate having the uneven portion. In other words, when the surface of the substrate is distributed in an island shape, different thickness distributions are formed on the side surface of the structural layer due to the half-turn position of the substrate, and it is often difficult to ensure the required thickness. The present invention has been made in view of the above problems, and an object of the invention is to provide a film forming apparatus which can improve the film thickness distribution of a surface of a substrate having uneven portions. Means for Solving the Problem 4/J4 201207138 In order to achieve the above object, a film forming apparatus according to an aspect of the present invention includes: a chamber, a stage, a rotating shaft, a film forming source, and a second rotation. a shaft, a drive source, and a rotary transmission mechanism. The work platform is configured to support a substrate and is disposed inside the chamber. The first rotating shaft can surround the working platform around the first shaft on the working platform. The upper film forming source causes the film-forming particles to be incident from the oblique direction toward the substrate on the working platform. The second rotation (four) is arranged along a second axis parallel to the first axis, and the first The ί axis is separated by a third distance. The driving source rotates the first rotating shaft and the second rotating shaft around the respective axes. Τ ^ The rotating transmission mechanism is provided on the first rotating shaft and the second Between the shafts, the working platform is rotated around the second shaft. [Embodiment] A film forming apparatus according to an embodiment of the present invention includes a chamber, a working platform, and a rotation. The film forming source, the second rotating and rotating transmission mechanism. The working platform is used for supporting the substrate, and the first rotating shaft is disposed in the chamber, and the working platform is passed around the working flat The 丨 axis of the center of the substrate is rotated. The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The second axis is different from the first axis by the first distance. The drive source can rotate the respective rotation axis and the second rotation tree 5/14 201207138 to the respective axis circumferences. _1: Turn == set in Shangmei and the above-mentioned. The platform rotates the film forming apparatus around the (10)th circumference, and the rotation of the circumference and the relative position of the second source around the second circumference of the second axis are changed. ^ ^ ^ ^ ^ ^ ^ ^ ^ 4 ^ ^ ,, 7 ϋ ^ ^ ^ ^^ ^ ^ ^ = The surface of the two substrates is improved by the setting = film == way, for example, in the case of continuation, A plurality of devices can be set for the __; 4_ ^ continued device. The film-forming particles, the particles of the material, and the particles of the material, for example, are formed by the evaporation source in the case where the film is formed by the evaporation source, in the case of steaming of the material, it is a fixed portion and can be orthogonal. The second = -VO is rotated around the rotation axis of the above brother 2. The surface is formed on the film-forming particles of the medium phase source. That is, the contamination preventing plate inside the chamber inside the member. This is caused by the child. The inner wall of the chamber is attached to the chamber, which improves the cleaning efficiency of the chamber. ^201107138 The above-mentioned rotary transmission mechanism has a first gear, a second gear and a third gear. The first gear train is provided around the second rotation shaft. The second gear train has a through hole through which the second rotating shaft passes, and is fixed to the chamber. The third gear train is disposed between the first gear and the second gear. According to this configuration, the work platform can be revolved by the rotation of the plate member, and is rotated around the first circumference by the rotation force around the second gear. Therefore, when the height of the concave and convex portions on the side of the working platform and the unevenness of the surface of the surface of the work platform, the unevenness can be set to be equal to or greater than two, the radius of the substrate is set to be: _ 乂 shift pattern An embodiment of the present invention will be described. The main body is not a three-dimensional view of the film forming device of the embodiment. Side view. The film forming apparatus 1 of the main component described in this section is a lining apparatus having a cavity γ axis indicating a positive cathode 12 . In addition, the X-axis and the mutually orthogonal vertical and horizontal directions in the figure, the two axes indicate that the X-axis and the γ-axis are exhausted from the untwisted air pump, so that the internal vacuum supply source, the surface, and the chamber 1Q is also connected to a gas (not shown) to introduce a predetermined treatment λ stomach in the chamber Κ), a reactive gas such as oxygen, or the like. Further, it is formed in the periphery of the chamber: an open-structured α-shaped soil for accessing the substrate W therebetween, and a gate valve system for opening and closing the opening is provided on the peripheral wall of the above 7/14 201207138. The working platform is a circular plate shape whose surface supports the support surface of the substrate w horizontally. Although not shown, the work platform is a chuck mechanism (for example, a mechanical chuck) having a fixed substrate w. In the present embodiment, the working platform 丨1 is formed to have substantially the same size as the substrate W, but it is of course not limited thereto. In this lean mode, the semiconductor wafer is used for the island, and the semiconductor wafer is used, but the glass substrate, the Tauman substrate, and the like are also applicable. The size of the substrate from / is not particularly limited. The surface of the substrate W may be a flat surface, and (4) may be an uneven surface in which the uneven portions such as the structural layer are distributed in an island shape. Sputtering the cathode 12 in addition to the smudges (hereinafter referred to as "Guba".) ί20 to: Bu: also includes: the bottom plate of the Qing 20, the tail force single S applying high frequency power to the bottom plate, and the formation on the (four) surface (4) The magnet monomanganese cathode] 2 series to put the surface of the 20 and work flat:] The surface of the plate W is inclined, and is placed opposite to the cavity: the heart, the cathode 12 is used in the 12 〇 and the substrate... The 'money' money is plated and the material is shot, so that the material of the electricity from the gas (4) is required to be a metal, an alloy or a special material or a resin material. In addition, it is also possible to use a film forming apparatus in the form of a ceramic in the form of a horse. In the case of reading or obstructing, it is possible to enter the following: "There is a self-revolving unit." m Μ 暴 暴 w w w w w w w w w w w w w w w w w w w w w h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h h The vehicle 22 rotates the drive source 40 of 8/14 201207138 and the rotary transmission mechanism 3 that rotates in synchronization with the second rotary shaft 22 and rotates the first rotary shaft 21. The first rotating shaft 21 is fixed to the work platform η. The second rotation axis 2j is disposed along the center 〇1 of the substrate w supported by the work platform 1! (the first axis Z1 of the figure is arranged. The second rotation axis 21 is slidable against the plate member 5 The second rotating shaft 22 is disposed along the second shaft 22 that is parallel to the first axis Z1 and spaced apart from the first axis z] by a predetermined distance (L). The driving source 4 is, for example, The second rotating shaft 22 is rotated around the second axis Z2. The second rotating shaft a is inserted into the inside of the cylindrical guiding member 41 that is airtightly penetrating through the bottom of the chamber 1 . 'The outside of the chamber (4) is connected to the drive source 40. The distance (offset) L between the axis Z1 and the second axis Z2 is due to the height of the uneven portion formed on the surface of the substrate or the surface of the uneven portion. The arrangement pitch of the corner ridges, the radius (r) of the substrate W, the angle of the projection from the granules, and the distance between the substrates W#1 and 12G are determined. In this implementation, the magnitude of the offset w Based on the base 1 and the semi-service r, for example, a setting of greater than or equal to ../4 and less than !* is set. The support structure 50 has the first rotating shaft 21 supported to be rotatable. 52. The gum and the fixing portion pivot shaft fixing portion 51 fixed to the upper end of the second rotating shaft 22 are constituted by a bearing member, and are rotatably supported by the first rotating circular shank 1 as a platform 11. The plate member 50 has a shape. The intersection of the second axis Z2 and the plate member 5 (which is a plate structure) is driven, and the plate age G is set to be rotatable around the second axis 22 in the XY plane. 9/14 201207138 ... = The transmission mechanism 30 has a gear 3], a second gear & a gear 33' and a casing 34 for accommodating the wheels. The first gear 31 is attached to the first! Rotate the axis 2] and rotate it together with the ^G: axis 21. The second gear 32 is fixed to the guide member * at the center portion thereof, and the second permeable guide member 41 is inserted into the chamber to be fixed to the chamber. The shaft 22 rotates. The third gear 33 is disposed between the second gear 32 and the second gear 32, and its function is to adjust the adjustment gear of the self-riding and speed ratio of the work. The second shaft 37 that is rotatable and freely rotatable, the second bearing 37 that is rotatable in the lead member 41, the third shaft 33 that rotates (four), and the third shaft that rotates freely The self-revolving unit member 5 configured as described above can be rotated in-plane. The first rotating shaft 2] read by the support portion 51 of the I::: and the 11 thereon are revolved around the second shaft 22 A circular path of the half/L centered on the point 02. #1' is disposed on the i-th gear 31 of the u-th axis 21, the third gear 33, and the second gear 32 is engaged with the second heart. 2丨德心心σ方; brother 2 gear 32 is the ¥ guide member 41, so with the revolving of the work platform 11, the ^: wheel 3] can rotate around the axis of the ship's rotating shaft 21, and the wheel 33 can rotate around the axis of the rotating shaft 35 while rotating the 2 gear 32. As the above ^ (10) around the rotation, - around the first thank, on the work platform u is centered on the point clock方^ 10/14 201207138=In the case of a turn, 'Make the worktable n rotate. 》For the center against the clock side^ The rotation number of the working platform and the third tooth _ Diameter gear 33 and the like from a flat spin revolution number of revolutions of the rotary 1] is not particularly limited, and for example, it is assumed, II = public work platform, the work platform system to the rotation rotation n 'is ^ work. In the embodiment of the present embodiment, an even multiple of the Sit rotation number (gear ratio) is set in a manner of two times, four times, or the like. Therefore, the work platform VIII 1 Jingdi 1 gear 31 can be made to correspond to each other, and thus the work is leveled. π : ^ position and rotation position into the direction of the substrate W (^ direction of the direction of the surface) = the position of the board W learning method of the substrate side two;:: fixed; results 1 shouting the substrate shift / The movement operation is performed. In the case of Μ, the substrate w on the film forming apparatus of the present embodiment = the working platform I is operated from the It self/revolution unit 20, and the relative position of 0 is not ensured by the target. The uniformity of the variation of the distribution of the spirits and the difference in the position of the diameters change the thickness of the film with the unevenness of the thickness. The film of the side of the relief is provided with a round and a plate in the revolving area of the working platform 11* The _==: shot above _^. The particles on the PP 4 4 are deposited on the plate member 50 to suppress the doping particles from acting as an adhesion preventing plate, and the inside of the chamber 10 is contaminated. Therefore, the adhesion of the inner wall surface of the chamber can be suppressed, and the chamber can be raised 11/14 201207 Further, according to the film forming apparatus of the present embodiment, the substrate 40 is used for the substrate w (the work platform (1) is self-controlled, and the self/revolution structure can be simplified and the simple control/"inch is achieved.

雖Γ本發明的實施形態作了說明,但本發明 未文此所限’可依據本發明的技術思想進行各種變二U 實嶋,,雖例舉作為成膜裝爾 鍵#置進灯了_,但不受此所限,本發明亦可 + 空蒸錄裝践㈣電«置等之魏的成縣I ;、Λ 又,以上的實施形態t,雖以公轉 圍配置單一的工作平W山(弟2轴Z2)周 :W工料σ Η的例子作了說明,㈣受 一二:公,|由周圍設置複數個工作平台u。在此情況 亦可因應需求予以省略。 板構件 再者,以上的實施形態中,係在屬公熟的第2旋祕 —上设置驅動源、40 ’但亦可設置驅動源來取代在二 根據此種構成亦可實現透過上述旋轉傳動機構二 K 丁工作平台的公轉驅動。 【圖式簡單說明】 圖1係概略顯示本發明的一實施形態之成膜裝置 要構件之立體圖。 、〇主 圖2係上述成膜裝置的主要構件之側視圖。 【主要元件符號說明】 1成膜裝置 10腔室 11 工作平台 12 濺鍍陰極 12/14 201207138 自公轉單元 第1旋轉轴 第2旋轉軸 旋轉傳動機構 第1齒輪 第2齒輪 第3齒輪 外殼 旋轉軸 第1軸承 第2軸承 第3軸承 驅動源 導引構件 板構件 萆巴 第1軸 第2軸 基板Although the embodiment of the present invention has been described, the present invention is not limited thereto, and various modifications can be made in accordance with the technical idea of the present invention, and it is exemplified as a film-forming device. _, but not limited to this, the present invention can also be + empty steam recording and installation (four) electric «Settings Wei's Cheng County I;, Λ, the above embodiment t, although the public workaround is configured with a single work level W Mountain (different 2 axis Z2) Week: The example of W material σ 作了 is explained, (4) subject to one or two: public, | a plurality of working platforms u are arranged around. In this case, it can also be omitted in response to the demand. Further, in the above embodiment, the driving source and the 40' are provided on the second secret of the publicly-known, but the driving source may be provided instead of the second rotating body. The revolution of the organization's two K-working platforms. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically showing the components of a film forming apparatus according to an embodiment of the present invention. Fig. 2 is a side view of the main components of the above film forming apparatus. [Main component symbol description] 1 Film forming apparatus 10 chamber 11 Working platform 12 Sputtering cathode 12/14 201207138 Self-revolving unit 1st rotating shaft 2nd rotating shaft rotating transmission mechanism 1st gear 2nd gear 3rd gear housing rotating shaft First bearing, second bearing, third bearing, drive source, guide member, plate member, first axis, second axis, second substrate

Claims (1)

201207138 七、申請專利範圍: 1. 一種成膜裝置,其具備: 腔室; ,·工作平台,係設置在前述腔室的内部,用以支撐基板; 第〗旋轉軸,係使前述工作平台繞著通過前述工作平台上 前述載物台上之前述基板的中心之第]軸周圍旋轉; 成膜源,係使成膜粒子從斜方向朝前述工作平台上的前述 基板射入; 第2旋轉軸,沿著和前述第1軸平行的第2軸而配列,且 與前述第1軸相隔有第1距離; 驅動源,其可使前述第1旋轉軸及前述第2旋轉軸繞著各 自的軸周圍旋轉;及 旋轉傳動機構,設置在前述第1旋轉軸與前述第2旋轉軸 之間且使前述工作平台繞著前述第2軸周圍旋轉。 2. 如申請專利範圍第1項之成膜裝置,其進一步具備圓板狀 的板構件,該板構件具有將前述工作平台支撐成可旋轉的 一支撐部、及固定於前述第2旋轉軸的固定部,且在正交 於前述第2軸的平面内可繞著前述第2旋轉軸周圍旋轉。 3. 如申請專利範圍第2項之成膜裝置,其中前述旋轉傳動機 構具有: 設置在前述第1旋轉軸周圍的第1齒輪; 具有前述第2旋轉轴所貫穿的貫穿孔,且固定於前述腔室 的第2齒輪;及 配置在前述第1齒輪與前述第2齒輪之間的第3齒輪。 4. 如申請專利範圍第1項之成膜裝置,其中將前述基板的半 徑設為r時,前述第1距離係大於等於r/4且小於r。 14/14201207138 VII. Patent application scope: 1. A film forming device, comprising: a chamber; a working platform disposed inside the chamber for supporting a substrate; and a rotating shaft for winding the working platform Rotating around the first axis of the center of the substrate on the substrate on the working platform; the film forming source causes the film-forming particles to enter from the oblique direction toward the substrate on the working platform; the second rotating shaft And arranged along a second axis parallel to the first axis, and spaced apart from the first axis by a first distance; and a driving source that surrounds the first rotating shaft and the second rotating shaft around the respective axes The rotation mechanism and the rotation transmission mechanism are disposed between the first rotation shaft and the second rotation shaft and rotate the work platform around the second shaft. 2. The film forming apparatus according to claim 1, further comprising a disk-shaped plate member having a support portion that supports the work platform so as to be rotatable, and a second rotating shaft fixed to the second rotating shaft The fixing portion is rotatable around the second rotation axis in a plane orthogonal to the second axis. 3. The film forming apparatus according to claim 2, wherein the rotation transmission mechanism includes: a first gear provided around the first rotating shaft; and a through hole through which the second rotating shaft penetrates, and is fixed to the aforementioned a second gear of the chamber; and a third gear disposed between the first gear and the second gear. 4. The film forming apparatus of claim 1, wherein when the radius of the substrate is r, the first distance is greater than or equal to r/4 and less than r. 14/14
TW100114671A 2010-04-28 2011-04-27 Deposition apparatus TW201207138A (en)

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TWI612165B (en) * 2015-03-20 2018-01-21 Shibaura Mechatronics Corp Film forming device and film forming workpiece manufacturing method
TWI873884B (en) * 2022-09-30 2025-02-21 日商芝浦機械電子裝置股份有限公司 Film forming device

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