201206813 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體晶圓之晶圓加工用載帶。 【先前技術】 目前已開發出一種將半導體晶圓切斷爲各晶片 有用以固定半導體晶圓之切割帶、與用以將切斷後 接合於基板等之晶粒接合膜兩者的功能之晶圓加工 。晶圓加工用載帶，係具備：剝離膜、具有切割帶 之黏著帶、以及具有晶粒接合膜的功能之接合劑層 近年來，對於運用在可攜式機器之記億體等的 置，係要求更進一步的薄型化與高容量化。因此， 多段地積層厚度50μπι以下的半導體晶片之構裝技 求乃逐年升高。因應此等需求，已開發並揭示一種 達到薄膜化，可埋塡半導體晶片之電路表面的凹凸 柔軟性之接合劑層之晶圓加工用載帶（例如參照專 1、2 ) ° 若無法埋塡電路表面的凹凸，則會在半導體晶 合劑層間產生空隙’使接合強度顯著地降低》—般 多段地積層厚度50μιη以下的半導體晶片之步驟中 之接合劑層的厚度爲25μιη以下，這種接合劑層於 硬化前的儲存彈性模數未達2xl〇6pa者，就充分地 導體晶片之電路表面的凹凸之觀點來看爲較佳。 將半導體晶片用的接合劑層積層於黏著帶之晶 時，具 的晶片 用載帶 的功能 〇 電子裝 對於可 術之需 具有可 並且具 利文獻 片與接 而言， 所要求 6〇〇C 熱 埋塡半 圓加工 -5- 201206813 用載帶，亦即所謂的切割及晶粒接合薄片’可 導體晶圓切割爲晶片之步驟、以及將切割後的 接合於基板等之步驟兩者，對於半導體構裝步 改善乃極爲有用。尤其是接合劑層對應於半導 預裁切爲圓形的標籤形狀，並且黏著帶對應於 導體晶圓加工時的處理性所裝設在黏著帶之環 裁切爲較接合劑層更大之圓形的標籤形狀，此 接合薄片之作業性顯著地優異》這種切割及晶 ，如第9圖所示，係在長條狀剝離膜20 1上以 置有複數個接合劑層202，並且以同心圓狀覆 層202且外緣部接觸於剝離膜201之方式積層 而構成（例如參照專利文獻3、4 )。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2000- 1 543 56號公報 [專利文獻2]日本特開2003-60127號公報 [專利文獻3]日本特開2007-2173號公報 [專利文獻4]日本特開2007-288170號公報 【發明內容】 (發明所欲解決之問題） 近年來’爲了在不會產生破損下，將因薄 之半導體晶片連同接合劑層予以拾取，對於切 用在將半 導體晶片 的作業性 晶圆而被 以提升半 框而被預 割及晶粒 接合薄片 定間隔設 各接合劑 著帶203 化而變脆 及晶粒接 -6- 201206813 合薄片的黏著帶，係要求更低的黏著力。 然而，將較薄且柔軟性高的接合劑層積層於黏著力低 的黏著帶來形成切割及晶粒接合薄片（晶圓加工用載帶） 的情況，將這種切割及晶粒接合薄片從剝離膜剝離並安裝 在半導體晶圓之際，接合劑層有時會被剝離膜抽離而從黏 著帶捲起，因而產生無法貼合於半導體晶圓之貼合不良。 該貼合不良大多的情況，是在將黏著帶與接合劑層的 積層體安裝在半導體晶圓時之最接近貼合起始點之接合劑 層的外周部上，亦即，一般而言爲標籤的圓周部上，從最 初接近半導體晶圓之一端開始產生（參照第1 〇圖）。 這種貼合不良的原因，是在接合劑層的衝切加工時， 由於刀具將塗佈在剝離膜上之接合劑層按壓於剝離膜並予 以切斷，使接合劑層在外緣部與剝離膜黏住，在安裝時接 合膜的前端在黏住部分上被剝離膜抽離，而形成與黏著帶 剝離的起頭。再者，由於該黏著帶的黏著力被降低，使剝 離膜-接合劑層間的剝離力與接合劑層-黏著帶間的剝離力 之差縮小，並且由於接合劑層較薄且柔軟而容易跟隨剝離 膜，一旦在接合劑層與黏著帶間產生剝離的起頭’則容易 使該剝離程度擴大。 因此，本發明之主要目的在於提供一種從晶圓加工用 載帶將剝離膜剝離時，可抑制接合劑層從黏著帶剝離之晶 圓加工用載帶。 (用以解決問題之技術手段） 201206813 爲了解決上述課題，根據本發明，係提供一種晶圓加 工用載帶，爲具有：剝離膜、及設置於前述剝離膜上之接 合劑層、以及從上方覆蓋前述接合劑層並以在前述接合劑 層的外側使外緣接觸於前述剝離膜之方式所設置之黏著帶 ，其特徵爲： 前述剝離膜沿著長邊方向被捲繞成捲筒狀； 前述接合劑層，以俯視觀看時具有主要部及連接於前 述主要部之至少一個突出部； 前述突出部之至少一個的突出長度爲4mm以上； 前述突出部的前端角度爲8 0°以上且未達120° : 前述突出部之前端的曲率半徑未達4mm; 前述突出部的前端與前述黏著帶的外緣間之距離爲 5mm以上； 前述突出部形成於前述接合劑層上之前述剝離膜的拉 離方向的上游側。 發明之效果： 根據本發明之晶圆加工用載帶，前述接合劑層，以俯 視觀看時具有主要部及連接於前述主要部之突出部，前述 突出部的面積較前述主要部的面積更小，前述突出部的突 出長度爲4mm以上，前述突出部的前端角度爲80°以上且 未達120°，前述突出部之前端的曲率半徑未達4mm。藉 此，即使剝離膜與接合劑暦黏住，由於可能成爲接合劑層 與黏著帶間之剝離的起頭之前端部極小化而不易成爲剝離 -8 - 201206813 的起點，從晶圓加工用載帶將剝離膜剝離時，可抑制接合 劑層從黏著帶剝離。此外，只要接合劑層之突出部的最前 端與剝離膜間被分離，則之後殘留的接合劑層亦跟隨於此 而與剝離膜分離，故即使在突出部最前端以外的場所，在 與黏著帶間亦不會產生剝離。 【實施方式】 以下參照圖面來說明本發明的較佳實施形態。 第1圖係顯示晶圓加工用載帶的槪略構成之圖。 如第1圖所示，晶圓加工用載帶1，係以捲筒狀捲繞 於成爲芯材之芯材10。晶圓加工用載帶1，具有：剝離膜 2、接合劑層3、及黏著帶4。 將接合劑層3與黏著帶4予以積層而構成切割晶粒接 合帶。 [剝離膜（2 )] 剝離膜2係形成爲矩形的帶狀，且朝單方向形成非常 長。剝離膜2,於製造時及使用時具有載體膜之功用。 剝離膜2，可使用聚對苯二甲酸乙二酯（PET )系、 聚乙烯系、其他經脫模處理的薄膜等之一般所知者。剝離 膜2的厚度並無特別限定，可適當地設定，較佳爲 25〜50μηι 〇 [接合劑層（3 )] -9- 201206813 接合劑層3係形成於剝離膜2的表面2 a (第1圖之 紙面的表側）上。所謂「剝離膜2的表面2a」，是指形 成有接合劑層3或黏著帶4之—面，爲第1圖中所圖示之 面。 接合劑層3，在貼合半導體晶圓w (參照第4圖）並 被切割後’於拾取晶片時，係使用作爲附著於晶片的內面 使該晶片被固定在基板或引線架時的接合劑。 接合劑層3係以使該厚度爲25 μηι以下之方式所形成 〇 接合劑層3，是由60°C熱硬化前的儲存彈性模數未達 2 X 1 06Pa之材料所形成。所謂「儲存彈性模數」，在對同 時具有彈性、黏性之高分子的力學特性進行分析之動態黏 彈性測定中，相當於彈性。 接合劑層3並無特別限定，只要是一般切割晶粒接合 帶所使用之薄膜狀接合劑者即可，較佳爲丙烯酸系黏接合 劑、環氧樹脂/酚樹脂/丙烯酸樹脂的混摻系黏接合劑等。 接合劑層3的厚度可適當地設定，較佳爲5〜25 μηι。 接合劑層3，可將於剝離膜2上塗佈接合劑的清漆並 予以乾燥形成薄膜者，積層於基材膜上所形成之黏著劑層 來形成。較佳者，積層時的溫度位於10〜100 °C的範圍， 並施加0,1〜100kgf/cm的線壓力。 接合劑層3，具有切斷（預裁切）爲因應晶圓W之形 狀的形狀》切斷，可藉由既定形狀的刀具將接合劑層3按 壓於剝離膜2來進行。此時，爲了完全地切斷接合膜，剝 -10- 201206813 離膜2亦須形成至少Ιμηι或以上之缺口，剝離膜2上’ 係形成有沿著接合劑層3的外緣之至少1 μηι或以上之缺 口。切斷後，去除接合劑層3之不必要的部分。 此時，使用切割晶粒接合帶時’貼合有晶圓W之部 分上具有接合劑層3，貼合有切割用的環狀框5之部分上 不具有接合劑層3,僅存在有黏著帶4,環狀框5被貼合 於黏著帶4而使用。一般而言，由於接合劑層3不易與被 黏著體剝離，故容易在環狀框5等產生殘膠。藉由使用預 裁切之接合劑層3，可使環狀框5貼合於黏著帶4，並且 在使用後的黏著帶剝離時，得到不易在環狀框5產生殘膠 之效果。 如第1圖、第2圖所示，接合劑層3具有對應於晶圓 W(參照第4圖）的形狀之圓形狀的主要部3a。如第3圖 所示，接合劑層3藉由黏著帶4從上方所覆蓋。亦即，接 合劑層3成爲被剝離膜2與黏著帶4夾持之狀態。 接合劑層3具有圓形的主要部3a，突出部3b —體地 形成於主要部3a。突出部3b的面積較主要部3a的面積 更小。突出部3 b爲除接合劑層3的主要部3 a以外之部分 。主要部3a的形狀並不限定於圓形，亦包含多角形等。 突出部3 b ’係配置並形成於接合劑層3上之剝離膜2 的抽出方向A (參照第1圖）的上游側，且爲剝離膜2的 拉離方向B (參照第1圖）的上游側。突出部3 b的寬度 ，從剝離膜2的抽出方向A的下游側朝上游側逐漸變窄 -11 - 201206813 剝離膜2的抽出方向A、拉離方向B，是與剝離膜2 的長邊方向一致（平行）。 此外，將剝離膜2從芯材10抽出之抽出方向A與剝 離膜2的拉離方向B，係具有反方向的關係，但如第5圖 所示，剝離膜2在抽出方向A上被抽出後，在既定位置 上折返並往拉離方向B被拉離，而從黏著帶4及接合劑層 3剝離。因此，接合劑層3的突出部3 b，在剝離膜2的抽 出方向A上位於上游側，且在剝離膜2的拉離方向B上 位於上游側。所謂剝離膜2的抽出方向A或拉離方向B 的上游側，是指接合劑層3的各部位當中先從剝離膜2剝 離之一側。 如第2圖所示，剝離膜2的長邊方向上之突出部3b ，係使突出長度d成爲4mm以上而形成。 突出部3b的前端部3c呈圓弧狀。 突出部3b之前端部3c的前端角度0位於80°以上且 未達120°之範圍，前端部3c的曲率半徑r未達4 mm。 突出部3b的前端部3c與黏著帶4的外緣間，確保 5mm以上的間隔（距離1 )，藉此避免接合劑層3接觸於 切割用的環狀框5(參照第4圖）而污染環狀框5。 [黏著帶（4)] 黏著帶4係設置於接合劑層3上。 如第1圖、第3圖所示，黏著帶4係覆蓋接合劑層3 ，且在接合劑層3的周圍全區域接觸於剝離膜2，並且具 -12- 201206813 有：因應切割用的環狀框5的形狀之標籤部4a、以及包 圍標籤部4a的外部所形成之周邊部4b。這種黏著帶4’ 可藉由預裁切加工從薄膜狀黏著劑去除標籤部4a的周邊 區域來形成。 黏著帶4並無特別限制，只要在切割晶圓W時具有 不會使晶圓W剝離之黏著力，且於切割後拾取晶片時顯 現出可容易從接合劑層3剝離之低黏著力者即可。 黏著帶4與接合劑層3之剝離強度，係選'擇較剝離膜 2與接合劑層3之剝離強度更大之黏著劑。此外，黏著帶 4與接合劑層3之剝離強度未達l.〇N/25mm。 黏著帶4係將黏著劑塗佈於基材膜上而製造出。 基材膜可列舉出聚乙烯、聚丙烯、乙烯-丙烯共聚物 、聚丁烯-1、聚-4 -甲基戊烯-1、乙烯-乙酸乙烯酯共聚物 、乙稀-丙嫌酸乙酯共聚物、乙稀-丙烯酸甲酯共聚物、乙 稀-丙烧酸共聚物、離子鍵聚合物等之Ct -稀烴的均聚物或 共聚物或是此等之混合物、聚胺基甲酸酯、苯乙稀-乙烯_ 丁烯或戊烯系共聚物 '聚醯胺-多元醇共聚物等之熱可塑 性彈性體、以及此等之混合物。此外，亦可將其等積層來 使用。 此外’爲了擴大元件間隙’較佳爲頸縮（將基材膜放 射狀地拉伸時所引起之力的傳播性不良所造成之部分丨申長 的產生）極少者，可例示出聚胺基甲酸醋、分子量及苯乙 烯含量經限定之苯乙烯-乙烯-丁烯或戊烯系共聚物等，爲 了防止切割時的伸長或撓曲’使用經交聯的基材膜者是有 -13- 201206813 效的。 基材膜，當使用放射線硬化性的黏著劑作爲黏著劑層 時，必須選擇使該黏著劑硬化之波長下的放射線穿透性佳 者。 再者，於基材膜的表面，爲了提升與黏著劑之接合性 ，可適當地施以電最處理、或是設置底層等處理》基材膜 的厚度，就強伸長度特性、放射線穿透性之觀點來看，通 常適當者爲30〜300μιη。 爲了提升切割後的拾取性，黏著劑較佳爲放射線硬化 性者。黏著帶4的黏著劑，是由藉由黏著劑的照射使與接 合劑層3之間的黏著力降低之材料所構成。放射線照射前 之接合劑層3與黏著帶4之剝離強度，較剝離膜2與接合 劑層3之剝離強度更大，藉由放射線的照射使黏著力降低 前之黏著帶4與接合劑層3之剝離強度，未達1.0Ν/2 5 mm 〇 例如，黏著劑中，較佳係含有下列聚合物，該聚合物 是由：使分子中具有碘價0.5~20的放射線硬化性碳·碳雙 鍵之化合物（A)，與選自聚異氰酸酯類、三聚氛胺甲醛 樹脂、及環氧樹脂之至少1種化合物（B )進行加成反應 所構成。 [黏著劑（化合物（A))] 接著說明黏著劑中所含有之聚合物的主成分之一的化 合物（A )。 -14- 201206813 化合物（A )之放射線硬化性碳-碳雙鍵的較佳導入量 ，以碘價計爲0_5〜20，更佳爲〇·8〜10。碘價爲0.5以上時 ’放射線照射後可得到黏著力的降低效果，碘價爲20以 下時’放射線照射後之黏著力的流動性充分，可充分得到 拉伸後的元件間隙’所以在拾取時可抑制各元件的影像辨 識困難之問題。再者，化合物（Α)本身具有安定性，可 容易製造出。 上述化合物（Α)，其玻璃轉移溫度較佳爲-7(TC ~0°C ’更佳爲-66°C〜-28°C。玻璃轉移溫度（以下稱爲「Tg」 )爲-7 0 °C以上時，相對於放射線照射所伴隨的熱具有充 分的耐熱性，爲0°C以下時，切割表面狀態粗糙的晶圓W 後，可充分地獲得元件飛散防止效果。 上述化合物（A)可爲任意方式所製造者，例如可採 用：使丙烯酸共聚物或甲基丙烯酸共聚物等之具有放射線 硬化性碳-碳雙鍵且具有官能基之化合物（1)、與具有可 與該官能基進行反應之官能基的化合物（2 )進行反應所 得者。 當中’前述具有放射線硬化性碳-碳雙鍵及官能基之 化合物（1)，可使丙烯酸烷酯或甲基丙烯酸烷酯等之具 有放射線硬化性碳-碳雙鍵之單體（（1) -1)、與具有官 能基之單體（（1 ) -2 )進行共聚合而得。 單體（（1) -1)，可列舉出碳數6〜12之丙烯酸己醋 、丙烯酸正辛酯、丙烯酸異辛酯、丙烯酸2 -乙基己酿、 丙烯酸十二酯、丙烯酸癸酯，或是碳數5以下的單體之丙 -15- 201206813 烯酸戊酯、丙烯酸正丁酯、丙烯酸異丁酯、丙烯 丙烯酸甲酯，或是與此等相同之甲基丙烯酸酯等 單體（（1)-〗），由於使用碳數愈大的單 轉移溫度愈低，所以可製作出具有期望的玻璃轉 。此外，除了玻璃轉移溫度之外，就提升相溶性 能之目的下，亦可在單體（（1 ) -η總重量的5 下之範圍內，調配乙酸乙烯酯、苯乙烯、丙烯腈 碳-碳雙鍵之低分子化合物。 單體（（1 ) -2 )所具有之官能基，可列舉 羥基、胺基、環狀酸酐基、環氧基、異氰酸基等 (1 ) -2 )的具體例，可列舉出丙烯酸、甲基丙 桂酸、衣康酸、富馬酸、鄰苯二甲酸、丙烯酸 酯類、甲基丙烯酸2-羥基烷酯類、單丙烯酸二 單甲基丙烯酸二醇酯類、N-羥甲基丙烯醯胺類、 甲基丙烯醯胺類、烯丙醇、丙烯酸N-烷基胺乙 基丙烯酸N-烷基胺乙酯類、丙烯醯胺類、甲基 類、馬來酸酐、衣康酸酐、富馬酸酐、鄰苯二甲 烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、烯丙 油醚、以羥基或羧基及具有放射線硬化性碳-碳 體將聚異氰酸酯化合物之異氰酸基的一部分予以 酯化者等。 化合物（2)中所使用之官能基，當（（1) 有之官能基爲羧基或環狀酸酐基時，可列舉出羥 基、異氛酸基等，爲羥基時，可列舉出環狀酸酐 酸乙酯、 〇 體時玻璃 移溫度者 與各種性 重量％以 等之具有 出羧基、 ，單體（ 烯酸、肉 2-羥基烷 醇酯類、 N-羥甲基 酯類、甲 丙烯醯胺 酸酐、丙 基縮水甘 雙鍵之單 胺基甲酸 -2 )所具 基、環氧 基、異氛 -16- 201206813 酸基等，爲胺基時，可列舉出環 氧基時，可列舉出羧基、環狀酸 可列舉出與單體（（1 ) -2 )的: 者。 化合物（1 )與化合物（2 ) 反應的官能基，來製造出酸價或 所規定者。 上述化合物（A)的合成中 時之有機溶劑，可使用酮系、酯 當中，較佳爲甲苯、乙酸乙酯、 乙基溶纖劑、丙酮、丁酮等一般 劑，且沸點爲60~120°C之溶劑 用α , α 偶氮雙異丁腈等之偶氮 有機過氧化物系等之自由基產生 用觸媒、聚合抑制劑，藉由調節 得到期望分子量的化合物（Α) 節，較佳是使用硫醇、四氯化碳 定於溶液聚合法，亦可使用嵌段 其他方法。 如此可得到化合物（A )， 佳爲30萬〜100萬。未達30萬 凝聚力較小，切割晶圓W時容 難以辨識影像。爲了極力防止該 爲40萬以上。此外，分子量超: 氧基、異氰酸基等，爲環 酐基' 胺基等，該具體例 體例中所列舉者爲相同 之反應中，可藉由殘留未 羥基價等特性成爲本發明 ’以溶液聚合法進行反應 系、醇系、芳香族系者， 異丙醇、苯甲基溶纖劑、 之丙烯酸系聚合物的良溶 ’聚合起始劑，通常是使 雙系、過氧化苯甲醯等之 劑。此時，可因應必要倂 聚合溫度及聚合時間，可 。此外，關於分子量的調 系的溶劑。該反應並不限 聚合法、懸浮聚合法等之 化合物（A )的分子量較 時’放射線照射所形成之 易產生兀件的偏移，有時 元件的偏移，分子量較佳 週100萬時，合成時及塗 -17- 201206813 佈時可能產生凝膠化。 本實施形態中所謂的「分子量」，爲經聚苯 之重量平均分子量。 此外，化合物（A)具有羥基價成爲5〜100 時，在放射線照射後可降低黏著力，而更能夠降 良的危險性，故較佳。此外，化合物（A )較佳 價成爲0.5〜30之COOH基》 在此，當化合物（A)的羥基價過低時，放 後黏著力的降低效果不足，過高時，有損及放射 黏著劑的流動性之傾向。此外，酸價過低時，載 的改善效果不足，過高時，有損及黏著劑的流動 [黏著劑（化合物（B))] 接著說明黏著劑中的另一個主成分之化合物（ 化合物（B)，爲選自聚異氰酸酯類、三聚每 樹脂、及環氧樹脂之化合物，可單獨使用或組合2 使用。該化合物（B )係作用爲交聯劑’藉由與< A )或剝離膜2進行反應所形成之交聯結構’可] 塗佈後更爲提升以化合物（A)及（B)爲主成3 劑的凝聚力。 聚異氰酸酯類並無特別限制，例如可列舉出 苯甲烷二異氰酸酯、甲苯二異氰酸酯、二甲苯二3 、4,4，-二苯醚二異氰酸酯、4,4，-[2,2-雙（4-苯氧〕 烯換算 OH基 拾取不 具有酸 線照射 照射後 復原性 之傾向 B )。 胺甲醛 種以上 合物（ 黏著劑 之黏著 4,4，-二 氰酸酯 基）丙 -18- 201206813 烷]二異氰酸酯等之芳香族異氰酸酯，六亞甲基二異氰酸 酯、2,2,4-三甲基-六亞甲基二異氰酸酯、異佛爾酮二異氰 酸酯、4，4'-二環己基甲烷二異氰酸酯、2，4'-二環己基甲烷 二異氰酸酯、離胺酸二異氰酸酯、離胺酸三異氰酸酯等。 聚異氰酸酯類，具體而言，市售品可使用 C 0 R Ο N A T E L ( N i ρ ρ ο η Ρ ο 1 y u r e t h a n e I n d u s t r y 公司製、商 品名稱）等。 三聚氰胺甲醛樹脂，具體而言，市售品可使用 NIKALAC MX-45 ( Sanwa Chemical 公司製、商品名稱） 、MHAC (日立化成工業公司製、商品名稱）。 環氧樹脂，可使用TETRAD-X (三菱化學公司製、商 品名稱）等。 本實施形態中，特佳爲使用聚異氰酸酯類。 (B )的添加量，相對於化合物（A) 1 0 0重量份，較 佳爲0」〜10重量份，更佳爲0.4〜3重量份。該量未達0.1 重量份時，有凝聚力提升效果不足之傾向，超過10重量 份時，於黏著劑的調配及塗佈作業中，硬化反應急速進行 而形成交聯結構，會損及作業性。 [黏著劑（光聚合起始劑（C ))] 本實施形態中’黏著劑中較佳係含有光聚合起始劑（ C ) ° 黏著劑中所含有之光聚合起始劑（C )並無特別限制 ，可使用以往所知者。例如可列舉出4,4·-二甲基胺基二 -19- 201206813 苯基酮、4,4'-二乙基胺基二苯基酮、4，4'-二氯二苯基酮等 之二苯基酮類，二乙氧基苯乙酮等之苯乙酮類，2-乙基蒽 醌、三級丁基蒽醌等之蒽醌類，2 -氯噻吨酮、安息香乙醚 、安息香異丙醚、苯甲基、2，4,5 -三苯咪唑二聚物（咯吩 二聚物）、吖啶系化合物等，此等可單獨使用或組合2種 以上使用。 (C)的添加量，相對於化合物（A) 1〇〇重量份，較 佳爲0.1〜10重量份，更佳爲0.5〜5重量份。 [黏著劑（其他）] 再者，本K施形態中所使用之放射線硬化性黏著劑中 ，可因應必要來調配黏著賦予劑、黏著調整劑、界面活性 劑等，或是其他改質劑及慣用成分。此外，黏著劑中亦可 適當地添加無機化合物塡充劑。 黏著劑層的厚度，當有時與一般的晶圓切割加工倂用 來進行處理時，較佳至少爲5μιη，更佳爲ΙΟμιη以上。此 外，僅進行雷射切割加工時，至少爲5 μπι以下，更佳爲 在不會失去晶片保持力之範圍內儘可能地薄化。 黏著劑層亦可爲積層有複數層之構成。 [晶圓加工用載帶（1 )之使用方法] 在進行半導體晶圓W的切割前，將晶圓加工用載帶1 貼合於半導體晶圓w及環狀框5。 詳細而言，如第5圖所示，藉由捲取輥1 〇〇從晶圓加 -20- 201206813 工用載帶1的捲筒體將晶圓加工用載帶1抽出。於該抽出 路徑上設置有剝離用楔1 0 1 ’以剝離用楔1 0 1的前端部作 爲折返點，僅將剝離膜2拉離’並捲取於捲取輥1 。於 剝離用楔101前端部的下方設置有吸附台102 ’於該吸附 台102的上面設置有環狀框5及半導體晶圓W。藉由剝離 用楔101將剝離膜2拉離後之接合劑層3及黏著帶4，被 引導至晶圓W上，並藉由貼合輥1 0 3貼合於晶圓W。 接著在將接合劑層3及黏著帶4貼合於環狀框5及晶 圓W之狀態下，切割晶圓W。 然後對黏著帶4施以放射線照射等之硬化處理，並拾 取半導體晶片。此時，黏著帶4由於硬化處理而使黏著力 降低，故容易從接合劑層3剝離，半導體晶片是在接合劑 層3附著於內面之狀態下被拾取。附著於半導體晶片的內 面之接合劑層3，在之後將半導體晶片接合於引線架或封 裝基板、或是其他半導體晶片時，係具有晶粒接合膜之功 能。 [作用與效果] 根據以上之晶圓加工用載帶1，接合劑層3具有主要 部3a及連接於主要部3a之突出部3b，突出部3b較主要 部3a具有更小的面積，突出部3b的突出長度d爲4mm 以上，突出部3b的前端角度0爲8〇。以上且未達12〇。， 突出部3 b之前端部3 c的曲率半徑r未達4 m m，如此，即 使剝離膜2與接合劑層3黏住，由於可能成爲接合劑層3 -21 - 201206813 與黏著帶4間之剝離的起頭之前端部達到極小化， 成爲剝離的起點。只要接合劑層3之前端部的突社 與剝離膜2間被分離，則之後殘留的接合劑層3亦 此而與剝離膜2分離，故即使在突出部3b以外的 在與黏著帶4間亦不會產生剝離。 突出部3b的前端角度0爲120°以上、或是前隹 的曲率半徑r爲4mm以上時，容易產生成爲接合 與黏著帶4間之剝離的起頭，而無法抑制黏著帶4 劑層3剝離的問題。 突出部3b的前端角度0未達80°、或是突出部 突出長度d未達4mm時，黏著帶4與接合劑層3 面積過小，保持力不足，故仍無法抑制上述問題。 因此，藉由使突出部3b的突出長度d和前端 、前端部3 c的曲率半徑r等達到最佳化，從晶圓 載帶1將剝離膜2剝離時，可抑制接合劑層3從黏 剝離。 · 此外，由於突出部3b存在於接合劑層3上之 2的拉離方向B的上游側之位置上，使可能成爲接 3與黏著帶4間之剝離的起頭之前端部達到極小化 在將剝離膜2剝離時，可抑制接合劑層3連同剝離 黏著帶4剝離。 此外，由於接合劑層3之厚度爲2 5 μιη以下，J 熱硬化前的儲存彈性模數未達2x1 06Pa’故可充分 半導體晶片之電路表面的凹凸，而防止半導體晶片 故不易 i部3 b 跟隨於 場所， 諸部3c 劑層3 與接合 3b的 之接觸 角度0 加工用 著帶4 剝離膜 合劑層 ，因此 膜2從 1 60°c 地埋塡 與晶圓 -22- 201206813 加工用載帶1間之接合強度的降低。 此外，由於接合劑層3與黏著帶4之剝離強度較剝離 膜2與接合劑層3之剝離強度更大，因此在將剝離膜2剝 離時，可抑制接合劑層3連同剝離膜2從黏著帶4剝離。 即使黏著帶4是由藉由放射線的照射使與接合劑層3間的 黏著力降低之材料所形成，此亦相同。 由於黏著帶4與接合劑層3之剝離強度未達 1.0N/2 5 mm ’所以在切割後容易進行半導體晶片的拾取。 接合劑層3及黏著帶4的形狀並不限定於第2圖的形 狀’亦可爲第6圖〜第8圖般的形狀（參照變形例1〜3 ) [變形例1] 亦可於接合劑層3上形成複數個突出部3b。 例如，如第6圖所示，於接合劑層3上形成2個突出 部3 b 1、3 b 2時，係將主要部3 a的面積設爲較加總2個突 出部3bl、3b2後的總面積更大。 突出部3bl的突出長度dl與突出部3b2的突出長度 d2中’將任一方設爲4mm以上，較佳將兩者設爲4mm以 上。 將突出部3bl之前端部3cl的前端角度01與突出部 3b2之前端部3c2的前端角度0 2，均設爲8〇°以上且未達 1 2 0 °之範圍內。 將突出部3 b 1之前端部3 c 1的曲率半徑r 1與突出部 -23- 201206813 3b2之前端部3c2的曲率半徑r2，均設爲未達4mm。 將突出部3bl的前端部3cl與黏著帶4的外緣間之距 離11，以及突出部3 b2的前端部3 c2與黏著帶4的外緣間 之距離12，均確保在5mm以上。 [變形例2] 亦可於接合劑層3上之剝離膜2的拉離方向B的下游 側，形成與突出部3b相同之突出部。 例如，如第7圖所示，於接合劑層3上之剝離膜2的 拉離方向B的上游側與下游側分別形成1個突出部3 b 1、 3 b2時，係將主要部3 a的面積設爲較加總2個突出部3 b 1 、3b2後的總面積更大。 突出部3bl的突出長度dl與突出部3b2的突出長度 d2中，將任一方設爲4mm以上，較佳將突出長度dl設 爲4mm以上，更佳將兩者設爲4mm以上。 突出部3bl之前端部3cl的前端角度Θ1與突出部 3 b2之前端部3c2的前端角度0 2中’較佳係將前端角度 0 1設爲80°以上且未達120°之範圍內’更佳將兩者均設 爲80°以上且未達120°之範園內。 突出部3bl之前端部3cl的曲率半徑rl與突出部3b2 之前端部3c2的曲率半徑r2中’較佳將曲率半徑ri設爲 未達4mm，更佳將兩者均設爲未達4mm。 將突出部3 b 1的前端部3 c 1與黏著帶4的外緣間之距 離Π，以及突出部3b2的前端部3c2與黏著帶4的外緣間 -24- 201206813 之距離12，均確保在5mm以上。 [變形例3] 亦可將突出部3 b的形狀構成爲4角形以上的多角形 狀。 例如’如第8圖所示’將突出部3 b的形狀構成爲顯 現出5角形狀之突出部3d時’係將主要部3a的面積設爲 較突出部3d的面積更大。所謂「突出部3d的面積」，爲 從主要部3a所突出之5角形狀部分的面積，且在與主要 部3a之連接部分上與主要部3a部分地重複之部分的面積 〇 將突出部3d的突出長度d設爲4mm以上。 將突出部3d之前端部3e的前端角度0設爲80°以上 且未達120°之範圍內。 將突出部3d之前端部3e的曲率半徑r設爲未達4mm 〇 將突出部3d的前端部3e與黏著帶4的外緣間之距離 1確保在5mm以上。 [實施例] 捧著對根據上述實施形態具體地實施本發明之晶圓加 工用載帶的實施例進行說明。 爲了顯示出本發明之晶圓加工用載帶的優異點，係列 舉出具備不同構成的接合劑層之晶圓加工用載帶的例子作 -25- 201206813 爲比較例，並針對評估項目進行比較。 (1 )樣本材料 (1 1 )黏著劑A 1 首先製作出由丙烯酸異壬酯、丙烯酸2-羥乙酯及甲 基丙烯酸甲酯所構成，且質量平均分子量80萬、玻璃轉 移溫度-30 °C之丙烯酸系共聚物。然後，相對於該共聚物 100重11份，加入聚異氰酸酯化合物CORONATE L ( Nippon Polyurethane Industry 公司製、商品名稱）9 重量 份作爲硬化劑，而得黏著劑A1。 (1.2 )黏著劑A2 首先製作出由丙烯酸異壬酯、丙烯酸2 -羥乙酯及甲 基丙烯酸甲酯所構成，且質量平均分子量80萬、玻璃轉 移溫度-30 °C之丙烯酸系共聚物。然後，相對於該共聚物 1〇〇重量份，加入聚異氰酸酯化合物CORONATE L (201206813 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a carrier tape for wafer processing of a semiconductor wafer. [Prior Art] A wafer having a function of cutting a semiconductor wafer into dicing tapes for fixing semiconductor wafers and bonding die-bonding films to substrates or the like is developed. machining. The carrier tape for wafer processing includes a release film, an adhesive tape having a dicing tape, and an adhesive layer having a function of a die-bonding film, and in recent years, for use in a portable device, Further thinning and high capacity are required. Therefore, the mounting technology of a semiconductor wafer having a multilayer thickness of 50 μm or less is increasing year by year. In response to such a demand, a carrier tape for wafer processing that achieves a thin film-forming adhesive layer capable of embedding the surface of a circuit of a semiconductor wafer (for example, reference numerals 1 and 2) has been developed and disclosed. When the unevenness on the surface of the circuit causes a gap between the semiconductor crystallizer layers to reduce the bonding strength remarkably, the thickness of the bonding agent layer in the step of stacking the semiconductor wafer having a thickness of 50 μm or less is 25 μm or less. If the storage elastic modulus of the layer before curing is less than 2 x 10 〇 6 Pa, it is preferable from the viewpoint of sufficiently concavo-convex surface of the circuit surface of the conductor chip. When the bonding agent for a semiconductor wafer is laminated on the crystal of the adhesive tape, the function of the carrier tape for the wafer is required for the processing and the document is required to be connected. Thermal immersion semi-circular processing-5-201206813 A carrier tape, that is, a so-called dicing and die-bonding sheet, a step of cutting a conductive wafer into a wafer, and a step of bonding the substrate after cutting, etc., to a semiconductor Improvements in the construction step are extremely useful. In particular, the bonding agent layer corresponds to a semi-conductor pre-cut into a circular label shape, and the adhesive tape is cut to a larger extent than the bonding agent layer in the ring of the adhesive tape corresponding to the handleability during processing of the conductor wafer. In the shape of a circular label, the workability of the bonded sheet is remarkably excellent. Such a cut and crystal, as shown in FIG. 9, is provided on the elongated release film 20 1 to have a plurality of adhesive layers 202, and The concentric circular coating layer 202 and the outer edge portion are laminated so as to be in contact with the release film 201 (see, for example, Patent Documents 3 and 4). [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. 2000-60127 (Patent Document 3) JP-A-2003-60127 (Patent Document 3) [Patent Document 4] JP-A-2007-288170 SUMMARY OF INVENTION [Problems to be Solved by the Invention] In recent years, 'in order to prevent damage, a thin semiconductor wafer and a bonding layer are picked up, for The utility model is used for cutting the work wafer of the semiconductor wafer by the pre-cutting and the die-bonding film by the lifting half frame, and the bonding agent tape 203 is formed to become brittle and the die is bonded to the -6-201206813. Adhesive tapes require lower adhesion. However, a thin and highly flexible bonding agent is laminated on a bonding tape having a low adhesion to form a dicing and die-bonding sheet (a carrier tape for wafer processing), and the dicing and die-bonding sheets are When the release film is peeled off and mounted on the semiconductor wafer, the adhesive layer may be pulled away by the release film and rolled up from the adhesive tape, resulting in poor bonding failure to be bonded to the semiconductor wafer. In many cases, the bonding failure is performed on the outer peripheral portion of the bonding agent layer closest to the bonding start point when the laminated body of the adhesive tape and the bonding agent layer is mounted on the semiconductor wafer, that is, generally The circumferential portion of the label is generated from the first end of the semiconductor wafer (see Fig. 1). The reason for the poor bonding is that the bonding agent layer applied to the release film is pressed against the release film and cut by the cutter during the punching process of the bonding layer, so that the bonding layer is peeled off at the outer edge portion. The film is adhered, and at the time of mounting, the leading end of the bonding film is peeled off by the release film on the adhering portion, and the start of peeling off from the adhesive tape is formed. Furthermore, since the adhesive force of the adhesive tape is lowered, the difference between the peeling force between the release film-bonding agent layer and the peeling force between the adhesive layer and the adhesive tape is reduced, and it is easy to follow because the adhesive layer is thin and soft. When the release film is peeled off between the adhesive layer and the adhesive tape, the degree of peeling is easily increased. Accordingly, it is a primary object of the present invention to provide a carrier tape for processing a wafer which can prevent the adhesive layer from being peeled off from the adhesive tape when the release film is peeled off from the carrier tape for wafer processing. (Technical means for solving the problem) 201206813 In order to solve the above problems, according to the present invention, there is provided a carrier tape for wafer processing, comprising: a release film, an adhesive layer provided on the release film, and an upper layer An adhesive tape provided to cover the adhesive layer and to have an outer edge contacting the release film on the outer side of the adhesive layer, wherein the release film is wound into a roll shape along a longitudinal direction; The bonding agent layer has a main portion and at least one protruding portion connected to the main portion in a plan view; at least one of the protruding portions has a protruding length of 4 mm or more; and the protruding portion has a front end angle of 80° or more and not Up to 120°: the radius of curvature of the front end of the protruding portion is less than 4 mm; the distance between the front end of the protruding portion and the outer edge of the adhesive tape is 5 mm or more; and the protruding portion is formed on the bonding layer to pull the peeling film The upstream side of the direction. According to the present invention, in the carrier tape for wafer processing, the adhesive layer has a main portion and a protruding portion connected to the main portion in a plan view, and the area of the protruding portion is smaller than the area of the main portion. The protruding length of the protruding portion is 4 mm or more, and the front end angle of the protruding portion is 80° or more and less than 120°, and the radius of curvature of the front end of the protruding portion is less than 4 mm. Therefore, even if the release film adheres to the bonding agent, the end portion before the start of the peeling between the adhesive layer and the adhesive tape is minimized, and it is not easy to be the starting point of the peeling - 8 - 201206813. When the release film is peeled off, peeling of the adhesive layer from the adhesive tape can be suppressed. Further, as long as the leading end of the protruding portion of the bonding agent layer is separated from the release film, the adhesive layer remaining thereafter is separated from the release film, so that it is adhered to the place other than the foremost end of the protruding portion. There is no peeling between the belts. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a view showing a schematic configuration of a carrier tape for wafer processing. As shown in Fig. 1, the carrier tape 1 for wafer processing is wound in a roll shape around a core material 10 serving as a core material. The carrier tape 1 for wafer processing has a release film 2, an adhesive layer 3, and an adhesive tape 4. The bonding layer 3 and the adhesive tape 4 are laminated to form a diced die bonding tape. [Release film (2)] The release film 2 is formed into a rectangular strip shape and formed to be extremely long in one direction. The release film 2 has a function as a carrier film at the time of manufacture and use. As the release film 2, those known from polyethylene terephthalate (PET), polyethylene, and other release-treated films can be used. The thickness of the release film 2 is not particularly limited and may be appropriately set, and is preferably 25 to 50 μm 〇 [bonding agent layer (3)] -9 to 201206813 The bonding agent layer 3 is formed on the surface 2 a of the release film 2 ( 1 on the side of the paper on the side of the paper. The "surface 2a of the release film 2" means a surface on which the adhesive layer 3 or the adhesive tape 4 is formed, and is the surface shown in Fig. 1. When the semiconductor wafer w (see FIG. 4) is bonded and diced, the bonding layer 3 is used for picking up the wafer, and bonding is performed when the wafer is fixed to the substrate or the lead frame as the inner surface of the wafer. Agent. The bonding agent layer 3 is formed of a material having a thickness of 25 μm or less, which is formed of a material having a storage elastic modulus of less than 2 × 10 6 Pa before thermal curing at 60 °C. The "storage elastic modulus" is equivalent to elasticity in the dynamic viscoelasticity measurement of the mechanical properties of a polymer having elasticity and viscosity at the same time. The bonding agent layer 3 is not particularly limited as long as it is a film-like bonding agent used for generally cutting a die bonding tape, and is preferably an acrylic bonding adhesive or an epoxy resin/phenol resin/acrylic resin mixed system. Adhesive bonding, etc. The thickness of the bonding layer 3 can be appropriately set, and is preferably 5 to 25 μm. The bonding agent layer 3 can be formed by applying a varnish of a bonding agent to the release film 2 and drying it to form a film, and laminating an adhesive layer formed on the substrate film. Preferably, the temperature at the time of lamination is in the range of 10 to 100 ° C, and a line pressure of 0, 1 to 100 kgf / cm is applied. The bonding layer 3 is cut (pre-cut) into a shape "cut according to the shape of the wafer W", and the bonding layer 3 can be pressed against the release film 2 by a cutter having a predetermined shape. At this time, in order to completely cut the bonding film, the peeling film -10-201206813 must also form a notch of at least Ιμηι or more, and the release film 2 is formed with at least 1 μm of the outer edge of the bonding agent layer 3. Or the gap above. After the cutting, unnecessary portions of the bonding layer 3 are removed. At this time, when the die bonding tape is used, the portion where the wafer W is bonded has the bonding agent layer 3, and the portion of the annular frame 5 to which the dicing is bonded is not provided with the bonding agent layer 3, and only the adhesive layer is present. The belt 4 is attached to the adhesive tape 4 and used. In general, since the adhesive layer 3 is less likely to be peeled off from the adherend, it is easy to generate residual glue in the ring frame 5 or the like. By using the pre-cut adhesive layer 3, the annular frame 5 can be attached to the adhesive tape 4, and when the adhesive tape after use is peeled off, the effect of not easily generating residual glue in the annular frame 5 is obtained. As shown in Fig. 1 and Fig. 2, the bonding layer 3 has a circular main portion 3a corresponding to the shape of the wafer W (see Fig. 4). As shown in Fig. 3, the bonding layer 3 is covered from above by the adhesive tape 4. That is, the adhesive layer 3 is in a state in which the peeled film 2 and the adhesive tape 4 are sandwiched. The bonding layer 3 has a circular main portion 3a, and the protruding portion 3b is integrally formed in the main portion 3a. The area of the protruding portion 3b is smaller than the area of the main portion 3a. The protruding portion 3b is a portion other than the main portion 3a of the bonding agent layer 3. The shape of the main portion 3a is not limited to a circular shape, and includes a polygonal shape or the like. The protruding portion 3 b ′ is disposed on the upstream side of the extraction direction A (see FIG. 1 ) of the release film 2 on the bonding layer 3 and is in the separation direction B of the release film 2 (see FIG. 1 ). Upstream side. The width of the protruding portion 3 b is gradually narrowed from the downstream side of the extraction direction A of the release film 2 toward the upstream side -11 - 201206813 The extraction direction A and the separation direction B of the release film 2 are the longitudinal direction of the release film 2 Consistent (parallel). Further, the extraction direction A in which the release film 2 is taken out from the core material 10 and the separation direction B of the release film 2 have a reverse direction, but as shown in Fig. 5, the release film 2 is taken out in the extraction direction A. Thereafter, it is folded back at a predetermined position and pulled away in the pulling direction B, and peeled off from the adhesive tape 4 and the bonding layer 3. Therefore, the protruding portion 3b of the bonding agent layer 3 is located on the upstream side in the drawing direction A of the release film 2, and is located on the upstream side in the drawing direction B of the release film 2. The upstream side of the extraction direction A or the separation direction B of the release film 2 means that one of the portions of the adhesive layer 3 is peeled off from the release film 2 first. As shown in Fig. 2, the protruding portion 3b in the longitudinal direction of the release film 2 is formed so that the protruding length d becomes 4 mm or more. The front end portion 3c of the protruding portion 3b has an arc shape. The front end angle 0 of the front end portion 3c of the protruding portion 3b is in the range of 80 or more and less than 120, and the radius of curvature r of the front end portion 3c is less than 4 mm. The distance between the front end portion 3c of the protruding portion 3b and the outer edge of the adhesive tape 4 is ensured to be 5 mm or more (distance 1), thereby preventing the adhesive layer 3 from coming into contact with the annular frame 5 for cutting (see Fig. 4). Ring frame 5. [Adhesive Tape (4)] The adhesive tape 4 is provided on the adhesive layer 3. As shown in Fig. 1 and Fig. 3, the adhesive tape 4 covers the adhesive layer 3, and is in contact with the release film 2 over the entire area around the adhesive layer 3, and has a ring for cutting in accordance with -12-201206813 The label portion 4a having the shape of the frame 5 and the peripheral portion 4b formed to surround the outside of the label portion 4a. This adhesive tape 4' can be formed by removing the peripheral region of the label portion 4a from the film-like adhesive by pre-cut processing. The adhesive tape 4 is not particularly limited as long as it has an adhesive force that does not peel off the wafer W when the wafer W is diced, and exhibits a low adhesion which can be easily peeled off from the adhesive layer 3 when the wafer is picked up after dicing. can. The peel strength of the adhesive tape 4 and the adhesive layer 3 is selected to be an adhesive having a greater peeling strength than the release film 2 and the adhesive layer 3. Further, the peeling strength of the adhesive tape 4 and the adhesive layer 3 did not reach 1. 〇 N / 25 mm. The adhesive tape 4 is produced by applying an adhesive to a base film. The base film may, for example, be polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-propylene acid B. a homopolymer or copolymer of a Ct-dilute hydrocarbon such as an ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionomer, or the like, or a mixture of the same, a polyamine group A thermoplastic elastomer such as an acid ester, a styrene-ethylene-butylene or pentene copolymer, a polyamine-polyol copolymer, and the like. In addition, it can also be used in layers. Further, in order to enlarge the element gap, it is preferable that the necking is small (the occurrence of a partial defect caused by poor propagation of the force caused by the base film being radially stretched), and a polyamine group can be exemplified. Formic acid vinegar, styrene-ethylene-butylene or pentene copolymer with a defined molecular weight and styrene content, etc., in order to prevent elongation or deflection during cutting, the use of crosslinked base film is -13- 201206813 Effective. In the base film, when a radiation curable adhesive is used as the adhesive layer, it is necessary to select a radiation penetration property at a wavelength at which the adhesive is cured. Further, in order to improve the adhesion to the adhesive on the surface of the base film, the thickness of the substrate film can be appropriately applied, or the thickness of the base film can be appropriately treated, and the elongation property and the radiation penetration can be performed. From the point of view of sex, it is usually 30 to 300 μmη. In order to improve pick-up after cutting, the adhesive is preferably radiation curable. The adhesive for the adhesive tape 4 is composed of a material which reduces the adhesive force with the adhesive layer 3 by the irradiation of the adhesive. The peeling strength of the adhesive layer 3 and the adhesive tape 4 before the radiation irradiation is larger than the peeling strength of the peeling film 2 and the adhesive layer 3, and the adhesive tape 4 and the adhesive layer 3 before the adhesive force is lowered by the irradiation of the radiation. The peeling strength is less than 1.0 Ν / 2 5 mm. For example, in the adhesive, it is preferred to contain the following polymer: the polymer has a radioactive hard carbon/carbon double having an iodine value of 0.5 to 20 in the molecule. The compound (A) of the bond is formed by an addition reaction with at least one compound (B) selected from the group consisting of polyisocyanates, triallyl formaldehyde resins, and epoxy resins. [Adhesive (Compound (A))] Next, the compound (A) which is one of the main components of the polymer contained in the adhesive will be described. -14- 201206813 The preferred introduction amount of the radiation-curable carbon-carbon double bond of the compound (A) is from 0 to 5 to 20, more preferably from 8 to 10, in terms of iodine value. When the iodine value is 0.5 or more, the effect of reducing the adhesion can be obtained after radiation irradiation. When the iodine value is 20 or less, the fluidity of the adhesive force after the radiation irradiation is sufficient, and the element gap after stretching can be sufficiently obtained. It can suppress the problem of difficulty in image recognition of each component. Further, the compound (Α) itself has stability and can be easily produced. The glass transition temperature of the above compound (Α) is preferably -7 (TC ~ 0 ° C ' more preferably -66 ° C ~ -28 ° C. The glass transition temperature (hereinafter referred to as "Tg") is - 7 0 When the temperature is above °C, the heat accompanying the radiation irradiation has sufficient heat resistance, and when the wafer W having a rough surface state is cut at 0 ° C or lower, the component scattering prevention effect can be sufficiently obtained. Any one can be produced by, for example, a compound (1) having a radiation-curable carbon-carbon double bond and having a functional group such as an acrylic copolymer or a methacrylic acid copolymer, and having a functional group In the case where the compound (2) having a functional group having a reaction is reacted, the compound (1) having a radiation-curable carbon-carbon double bond and a functional group may have an alkyl acrylate or an alkyl methacrylate. A monomer ((1) -1) which is obtained by copolymerization of a monomer having a radiation-curable carbon-carbon double bond ((1) -1) and a monomer having a functional group ((1) -2). Listed hexyl acrylate vinegar, n-octyl acrylate, acrylic acid with carbon number 6~12 Ester, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or a monomer having a carbon number of 5 or less C-15-201206813 Ethyl enoate, n-butyl acrylate, isobutyl acrylate, propylene Methyl acrylate, or a monomer such as methacrylate ((1)-), which has the same carbon number, has a lower single-transfer temperature, so that a desired glass transition can be produced. In addition to the glass transition temperature, vinyl acetate, styrene, acrylonitrile carbon-carbon may be blended in the range of 5 (total weight of (1)-η) for the purpose of improving the compatibility. a low molecular compound of a double bond. The functional group of the monomer ((1) -2) may, for example, be a hydroxyl group, an amine group, a cyclic acid anhydride group, an epoxy group, an isocyanate group or the like (1) -2 ) Specific examples thereof include acrylic acid, methyl propyl lauric acid, itaconic acid, fumaric acid, phthalic acid, acrylates, 2-hydroxyalkyl methacrylates, and dimethacrylic acid diol monoacrylate. Esters, N-methylol acrylamide, methacrylamide, allyl alcohol, propylene N-alkylamine ethyl acrylate N-alkylamine ethyl ester, acrylamide, methyl, maleic anhydride, itaconic anhydride, fumaric anhydride, glycidyl phthalate, methyl A glycidyl acrylate, an allyl oleyl ether, a hydroxyl group or a carboxyl group, and a part of an isocyanate group of a polyisocyanate compound which has a radiation hardening carbon-carbon body, etc.. The functional group used by the compound (2). When (1) the functional group is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an oleic acid group, etc. are mentioned, and when it is a hydroxyl group, the glass transition temperature of the cyclic acid anhydride ethyl ester and a hydrazine body is mentioned. And a variety of weight % to have a carboxyl group, a monomer (enoic acid, meat 2-hydroxyalkanol esters, N-hydroxymethyl esters, methacrylic acid anhydride, propyl glycidyl double bond monoamine In the case of an amino group, when the epoxy group is an alkyl group, the carboxyl group and the cyclic acid may be exemplified by a monomer, an epoxy group, or an epoxy group. ((1) -2 ): The functional group which the compound (1) reacts with the compound (2) to produce an acid value or a prescribed one. The organic solvent in the synthesis of the above compound (A) may be a ketone system or an ester, preferably a general agent such as toluene, ethyl acetate, ethyl cellosolve, acetone or methyl ethyl ketone, and has a boiling point of 60 to 120. The solvent of °C is a catalyst for the production of a radical such as an azo organic peroxide such as α,α azobisisobutyronitrile or a polymerization inhibitor, and the compound (期望) is obtained by adjusting the desired molecular weight. It is preferred to use a thiol or carbon tetrachloride in a solution polymerization method, or to use a block method. Thus, the compound (A) can be obtained, preferably from 300,000 to 1,000,000. Less than 300,000 Cohesive force is small, and it is difficult to identify images when cutting wafer W. In order to prevent this as much as 400,000 or more. Further, the molecular weight is more than an oxy group, an isocyanate group or the like, and is a cyclic anhydride group, an amine group or the like. In the same reaction as in the specific examples, the present invention can be obtained by the characteristics such as residual valence of a hydroxyl group. A solution-polymerization initiator which is a reaction system, an alcohol system, an aromatic compound, an isopropanol, a benzyl group-solvent, or an acrylic polymer by a solution polymerization method, usually a double-system or a benzene peroxide. A prescription for hyperthyroidism. In this case, the polymerization temperature and polymerization time may be necessary. Further, a solvent for adjusting the molecular weight. The reaction is not limited to the molecular weight of the compound (A) such as a polymerization method or a suspension polymerization method, and it is easy to cause a shift of the element due to radiation irradiation, and the element may be shifted, and the molecular weight is preferably 1,000,000. Gelation may occur during the synthesis and when coated with -17-201206813. The "molecular weight" in the present embodiment is the weight average molecular weight of polyphenylene. Further, when the compound (A) has a hydroxyl group value of 5 to 100, the adhesion can be lowered after radiation irradiation, and the risk of lowering is better, which is preferable. Further, the compound (A) is preferably a COOH group of 0.5 to 30. Here, when the hydroxyl value of the compound (A) is too low, the effect of lowering the adhesive force after release is insufficient, and when it is too high, the radiation adhesion is impaired. The tendency of the agent to be fluid. In addition, when the acid value is too low, the improvement effect of the load is insufficient, and when it is too high, the flow of the adhesive is impaired [adhesive (compound (B))] Next, the compound of the other main component in the adhesive (compound ( B) is a compound selected from the group consisting of polyisocyanates, trimerization resins, and epoxy resins, and may be used singly or in combination 2. The compound (B) acts as a crosslinking agent 'by < A ) or The crosslinked structure formed by the reaction of the release film 2 can be further enhanced by the cohesive force of the compound (A) and (B) as a main component. The polyisocyanate is not particularly limited, and examples thereof include phenylmethane diisocyanate, toluene diisocyanate, xylene di 3, 4,4, diphenyl ether diisocyanate, and 4,4,-[2,2-bis (4). -Phenoxylene-based OH-based pickup does not have a tendency to recover after irradiation with an acid ray (B). Amine formaldehyde complex (adhesive 4,4,-dicyanate group) C--18-201206813 Aromatic isocyanate such as alkane diisocyanate, hexamethylene diisocyanate, 2,2,4- Trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, diazonic acid diisocyanate, amine Acid triisocyanate and the like. As the polyisocyanate, a commercially available product can be, for example, C 0 R Ο N A T E L (N i ρ ρ ο η Ρ ο 1 y u r e t h a n e I n d u s t r y company-made, trade name). For the melamine-formaldehyde resin, for example, NIKALAC MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name) and MHAC (manufactured by Hitachi Chemical Co., Ltd., trade name) can be used. For the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) can be used. In the present embodiment, it is particularly preferred to use a polyisocyanate. The amount of (B) added is preferably from 0" to 10 parts by weight, more preferably from 0.4 to 3 parts by weight, based on 100 parts by weight of the compound (A). When the amount is less than 0.1 part by weight, the cohesive strength-improving effect tends to be insufficient. When the amount is more than 10 parts by weight, the curing reaction rapidly proceeds during the preparation and application of the adhesive to form a crosslinked structure, which may impair workability. [Adhesive (Photopolymerization Initiator (C))] In the present embodiment, the photopolymerization initiator (C) contained in the photopolymerization initiator (C) ° adhesive is preferably contained in the adhesive. There is no particular limitation, and those known to the past can be used. For example, 4,4.-dimethylaminodi-19-201206813 phenyl ketone, 4,4'-diethylaminodiphenyl ketone, 4,4'-dichlorodiphenyl ketone, etc. are mentioned. Diphenyl ketones, acetophenones such as diethoxyacetophenone, anthraquinones such as 2-ethylhydrazine and tert-butyl hydrazine, 2-chlorothioxanthone, benzoin ethyl ether, A benzoin isopropyl ether, a benzyl group, a 2,4,5-tribenzimidazole dimer (an oxo-dimer), an acridine compound, etc. may be used alone or in combination of two or more. The amount of (C) to be added is preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight, per part by weight of the compound (A). [Adhesive (Others)] In the radiation curable adhesive used in the present embodiment, an adhesion-imparting agent, an adhesion regulator, a surfactant, or the like may be added as necessary, or other modifiers may be used. Conventional ingredients. Further, an inorganic compound chelating agent may be appropriately added to the adhesive. The thickness of the adhesive layer is preferably at least 5 μm, more preferably ΙΟμηη or more, when it is sometimes used for general wafer cutting processing. Further, it is at least 5 μm or less in laser cutting only, and more preferably as thin as possible within a range in which the wafer holding force is not lost. The adhesive layer may also be composed of a plurality of layers laminated. [Method of Using Carrier Tape for Wafer Processing (1)] Before the dicing of the semiconductor wafer W, the carrier tape 1 for wafer processing is bonded to the semiconductor wafer w and the ring frame 5. Specifically, as shown in Fig. 5, the wafer processing carrier tape 1 is taken out from the wafer by the take-up roll 1 〇〇 from the roll of the -20-201206813 work carrier tape 1. The peeling wedge 1 0 1 ' is provided on the drawing path, and the leading end portion of the peeling wedge 110 is used as a turning point, and only the peeling film 2 is pulled away' and wound up on the take-up roll 1. An adsorption stage 102' is disposed below the front end portion of the peeling wedge 101. The annular frame 5 and the semiconductor wafer W are provided on the upper surface of the adsorption stage 102. The adhesive layer 3 and the adhesive tape 4, which have been separated from the release film 2 by the peeling of the peeling film 2, are guided onto the wafer W, and bonded to the wafer W by the bonding roller 101. Next, the bonding layer 3 and the adhesive tape 4 are bonded to the ring frame 5 and the wafer W, and the wafer W is diced. Then, the adhesive tape 4 is subjected to a hardening treatment such as radiation irradiation, and the semiconductor wafer is picked up. At this time, since the adhesive tape 4 is hardened by the hardening treatment, it is easily peeled off from the adhesive layer 3, and the semiconductor wafer is picked up while the adhesive layer 3 is attached to the inner surface. The bonding agent layer 3 attached to the inner surface of the semiconductor wafer has a function of a die bonding film when the semiconductor wafer is subsequently bonded to a lead frame or a package substrate or other semiconductor wafer. [Function and Effect] According to the above-described carrier tape 1 for wafer processing, the bonding layer 3 has a main portion 3a and a protruding portion 3b connected to the main portion 3a, and the protruding portion 3b has a smaller area than the main portion 3a, and the protruding portion The protruding length d of 3b is 4 mm or more, and the front end angle 0 of the protruding portion 3b is 8 inches. Above and less than 12〇. The radius of curvature r of the front end portion 3 c of the protruding portion 3 b is less than 4 mm, so that even if the release film 2 and the bonding agent layer 3 are adhered, it may become a layer between the bonding agent layer 3-21-201206813 and the adhesive tape 4. The end portion before the start of the peeling is minimized and becomes the starting point of peeling. As long as the protrusion between the front end portion of the bonding agent layer 3 and the release film 2 is separated, the remaining adhesive layer 3 is separated from the release film 2, so that even between the protruding portion 3b and the adhesive tape 4 There will be no peeling. When the front end angle 0 of the protruding portion 3b is 120° or more, or the curvature radius r of the front side is 4 mm or more, the start of peeling between the bonding and the adhesive tape 4 is likely to occur, and the peeling of the adhesive layer 4 from the adhesive layer 4 cannot be suppressed. problem. When the front end angle 0 of the protruding portion 3b is less than 80° or the protruding portion length d is less than 4 mm, the area of the adhesive tape 4 and the adhesive layer 3 is too small, and the holding force is insufficient, so that the above problem cannot be suppressed. Therefore, by optimizing the protruding length d of the protruding portion 3b, the tip end portion, the radius of curvature r of the distal end portion 3c, and the like, when the release film 2 is peeled off from the wafer carrier tape 1, the adhesive layer 3 can be prevented from being peeled off from the adhesive layer. . In addition, since the protruding portion 3b is present on the upstream side of the pulling direction B of the bonding agent layer 3, the front end portion which may become the peeling between the bonding tape 3 and the adhesive tape 4 is minimized. When the release film 2 is peeled off, peeling of the adhesive layer 3 together with the peeling adhesive tape 4 can be suppressed. In addition, since the thickness of the bonding agent layer 3 is 25 μm or less, the storage elastic modulus before the J thermal curing is less than 2x1 06 Pa', so that the unevenness of the surface of the circuit of the semiconductor wafer can be sufficiently obtained, and the semiconductor wafer is prevented from being easily damaged. Following the location, the contact angle of the 3c agent layer 3 with the bonding 3b is 0. The filming layer 4 is used to separate the film mixture layer, so the film 2 is buried from 1 60 ° C and the wafer 22-22068987 The joint strength of one is reduced. Further, since the peeling strength of the adhesive layer 3 and the adhesive tape 4 is greater than the peeling strength of the release film 2 and the adhesive layer 3, when the release film 2 is peeled off, the adhesive layer 3 and the release film 2 can be suppressed from sticking. Strip 4 stripping. This is the same even if the adhesive tape 4 is formed of a material which is reduced in adhesion to the adhesive layer 3 by irradiation of radiation. Since the peeling strength of the adhesive tape 4 and the adhesive layer 3 is less than 1.0 N / 2 5 mm ', picking up of the semiconductor wafer is easy after the dicing. The shape of the adhesive layer 3 and the adhesive tape 4 is not limited to the shape of the second drawing, and may be a shape similar to the sixth to eighth embodiments (see the modified examples 1 to 3). [Modification 1] A plurality of protrusions 3b are formed on the agent layer 3. For example, as shown in Fig. 6, when two protruding portions 3b1, 3b2 are formed on the bonding layer 3, the area of the main portion 3a is set to be larger than the two protruding portions 3b1, 3b2. The total area is larger. One of the protruding length d1 of the protruding portion 3b1 and the protruding length d2 of the protruding portion 3b2 is set to 4 mm or more, and it is preferable to set both of them to be 4 mm or more. The front end angle 01 of the front end portion 3c1 of the protruding portion 3b1 and the front end angle 02 of the front end portion 3c2 of the protruding portion 3b2 are both in the range of 8 〇 or more and less than 120 °. The radius of curvature r 1 of the front end portion 3 c 1 of the protruding portion 3 b 1 and the radius of curvature r2 of the front end portion 3c2 of the protruding portion -23-201206813 3b2 are both set to be less than 4 mm. The distance between the front end portion 3cl of the protruding portion 3b1 and the outer edge of the adhesive tape 4, and the distance 12 between the front end portion 3c2 of the protruding portion 3b2 and the outer edge of the adhesive tape 4 are all secured at 5 mm or more. [Modification 2] A protruding portion similar to the protruding portion 3b may be formed on the downstream side of the peeling direction B of the release film 2 on the bonding layer 3. For example, as shown in Fig. 7, when one protruding portion 3b1, 3b2 is formed on the upstream side and the downstream side of the peeling direction B of the release film 2 on the bonding layer 3, the main portion 3a is formed. The area is set to be larger than the total area after adding 2 protrusions 3 b 1 and 3b2. One of the protruding length d1 of the protruding portion 3b1 and the protruding length d2 of the protruding portion 3b2 is set to 4 mm or more, and the protruding length d1 is preferably 4 mm or more, and more preferably 4 mm or more. The front end angle Θ1 of the front end portion 3cl of the protruding portion 3b1 and the front end angle 0 2 of the front end portion 3c2 of the protruding portion 3b2 are preferably set to be in the range of 80° or more and less than 120°. Both are set to 80° or more and less than 120°. The radius of curvature rl of the front end portion 3c1 of the protruding portion 3b1 and the radius of curvature r2 of the front end portion 3c2 of the protruding portion 3b2 are preferably set to have a radius of curvature ri of less than 4 mm, and more preferably both are set to be less than 4 mm. The distance Π between the front end portion 3 c 1 of the protruding portion 3 b 1 and the outer edge of the adhesive tape 4 and the distance 12 between the front end portion 3c2 of the protruding portion 3b2 and the outer edge of the adhesive tape 4 are guaranteed to be 12 - 201206813 Above 5mm. [Modification 3] The shape of the protruding portion 3b may be formed into a polygonal shape of a quadrangular shape or more. For example, when the shape of the protruding portion 3b is configured to show the protruding portion 3d having a five-corner shape as shown in Fig. 8, the area of the main portion 3a is made larger than the area of the protruding portion 3d. The "area of the protruding portion 3d" is the area of the five-corner portion that protrudes from the main portion 3a, and the area of the portion that is partially overlapped with the main portion 3a at the portion where the main portion 3a is connected is the protruding portion 3d. The protruding length d is set to be 4 mm or more. The front end angle 0 of the front end portion 3e of the protruding portion 3d is set to be 80 or more and less than 120. The radius of curvature r of the front end portion 3e of the protruding portion 3d is set to be less than 4 mm. The distance 1 between the front end portion 3e of the protruding portion 3d and the outer edge of the adhesive tape 4 is secured to 5 mm or more. [Embodiment] An embodiment in which a wafer processing carrier tape according to the present invention is specifically carried out according to the above embodiment will be described. In order to show the superiority of the carrier tape for wafer processing of the present invention, an example of a carrier tape for wafer processing having a bonding agent layer having a different composition is given as a comparative example, and a comparison example is made for the evaluation items. . (1) Sample material (1 1 ) Adhesive A 1 was first made of isodecyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and the mass average molecular weight was 800,000, and the glass transition temperature was -30 °. An acrylic copolymer of C. Then, 9 parts by weight of a polyisocyanate compound CORONATE L (manufactured by Nippon Polyurethane Industry Co., Ltd.) was added as a curing agent to 11 parts by weight of the copolymer 100 to obtain an adhesive A1. (1.2) Adhesive A2 First, an acrylic copolymer composed of isodecyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate and having a mass average molecular weight of 800,000 and a glass transition temperature of -30 °C was produced. Then, a polyisocyanate compound CORONATE L is added with respect to 1 part by weight of the copolymer.
Nippon Polyurethane Industry 公司製、商品名稱）3 重量 份作爲硬化劑，而得黏著劑A2。Nippon Polyurethane Industry, trade name, 3 parts by weight as a hardener, and the adhesive A2 is obtained.
(1 · 3 )黏著劑B 首先製作出由丙烯酸異壬酯、丙烯酸2_羥乙酯及甲 基丙烯酸甲酯所構成，且質量平均分子量80萬、玻璃轉 移溫度-30 °C之丙烯酸系共聚物。 然後，相對於該共聚物100重量份’加入三甲基丙締 • 26- 201206813 酸三羥甲基丙烷酯20重量份作爲具有放射線硬化性碳-碳 雙鍵之化合物、聚異氰酸酯化合物CORONATE L ( Nippon Polyurethane Industry 公司製、商品名稱）7 重量 份作爲硬化劑、以及 Irgacure 184(Nihon Ciba-Geigy 公 司製、商品名稱）5重量份作爲光聚合起始劑，而得放射 線硬化性黏著劑B。 (1.4)基材膜 將由聚丙烯樹脂與氫化苯乙烯-丁二烯共聚物所構成 之樹脂組成物進行熔融混煉使其成形，而得厚度1 0 Ομιη 的基材膜。 然後將黏著劑塗佈於該基材膜，在熱風乾燥爐中進行 乾燥，而得乾燥後的厚度爲1 Ομηι之黏著劑層與基材膜的 積層體之黏著帶。 (1 · 5 )黏著劑層C 1 黏著劑層（晶粒接合層）有許多種，可使用以任意方 法所製得者，在此，係將作爲環氧硬化劑之2-苯基咪唑5 重量份與二甲苯二胺0.5重量份，調配於丙烯酸系共聚物 (丙烯酸縮水甘油酯系共聚物）1 〇〇重量份、甲酚酚醛型 環氧樹脂100重量份、及二甲苯酚醛型酚樹脂1〇重量份 中，並加入平均粒徑：0.012μηι的奈米二氧化矽塡充材20 重量份，而得黏著劑C 1。將此塗佈於剝離膜上，然後在 110 °C下乾燥2分鐘，而製作出厚度10Km的黏著劑層。 -27- 201206813 然後，因應後述樣本的形狀，將黏著劑層衝切爲第2 圖、第6圖〜第9圖所示之既定形狀，使連續排列成島狀 的標籤殘留，並從剝離膜上去除該黏著劑層之島狀以外的 部分。 (1.6)黏著劑層C2 將作爲環氧硬化劑之2-苯基咪唑5重量份與二甲苯 二胺0.5重量份，調配於丙烯酸系共聚物（丙烯酸縮水甘 油酯系共聚物）1〇〇重量份、甲酚酚醛型環氧樹脂1〇〇重 量份、及二甲苯酚醛型酚樹脂1〇重量份中’並加入平均 粒徑：0.01 2μιη的奈米二氧化矽塡充材60重量份，而得 黏著劑C2。將此塗佈於剝離膜上，然後在Π 〇°C下乾燥2 分鐘，而製作出厚度ι〇μ™的黏著劑層。 然後，因應後述樣本的形狀，將黏著劑層衝切爲第9 圖所示之既定形狀，使連續排列成島狀的標籤殘留’並從 剝離膜上去除該黏著劑層之島狀以外的部分。 (2 )樣本的製作 (2. 1 )實施例1 將衝切爲第2圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑Α1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑4 a設爲22〇mm’黏著帶的 直徑設爲270mm，突出部的長度d設爲4mm’突出 -28- 201206813 部的前端角度β設爲11〇°，突出部之前端的曲率半徑r設 爲1mm，接合劑層的突出部與黏著帶的外緣間之距離1設 爲21mm，設置有接合劑層與黏著帶的積層體之剝離膜的 寬度c設爲290mm。 (2.2 )實施例2 將衝切爲第2圖所示之標籤形狀的黏著劑層C 1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上’並將黏著帶 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑Φ a設爲220mm，黏著帶的 直徑Φ b設爲27 0mm，突出部的長度d設爲4mm，突出 部的前端角度0設爲80°，突出部之前端的曲率半徑r設 爲lmm，接合劑層的突出部與黏著帶的外緣間之距離1設 爲21mm，設置有接合劑層與黏著帶的積層體之剝離膜的 寬度c設爲29 0mm。 (2.3 )實施例3 將衝切爲第2圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑Φ a設爲220mm，黏著帶的 直徑0b設爲270mm，突出部的長度d設爲10mm’突出 部的前端角度0設爲110。，突出部之前端的曲率半徑r設 爲3mm，接合劑層的突出部與黏著帶的外緣間之距離1設 -29- 201206813 爲15mm，設置有接合劑層與黏著帶的積層體之剝離膜的 寬度c設爲290mm。 (2.4)實施例4 將衝切爲第2圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑B之黏著帶積層於剝離膜上’並將黏著帶衝 切爲第2圖所示之標籤形狀’去除不必要的部分。 接合劑層之主要部的直徑設爲220mm ’黏著帶的 直徑<i>b設爲270mm，突出部的長度d設爲l〇mm’突出 部的前端角度0設爲突出部之前端的曲率半徑r設 爲3mm，接合劑層的突出部與黏著帶的外緣間之距離1設 爲15mm，設置有接合劑層與黏著帶的積層體之剝離膜的 寬度c設爲290mm。 (2 · 5 )實施例5 將衝切爲第6圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑A 1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第6圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑設爲220mm，黏著帶的 直徑0b設爲270 mm，突出部的長度dl及d2設爲10mm ，突出部的前端角度01及02設爲110°，突出部之前端 的曲率半徑rl及r2設爲lmm，接合劑層的突出部與黏著 帶的外緣間之距離11及12設爲1 5mm，設置有接合劑層 與黏著帶的積層體之剝離膜的寬度c設爲2 90mm。 -30- 201206813 (2 · 6 )實施例6 將衝切爲第7圖所示之標籤形狀的黏著劑層Cl、與 塗佈有黏著劑AI之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第7圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑4a設爲22〇mm，黏著帶的 直徑 Φ b設爲 2 70mm，一方之突出部的長度dl設爲 10mm，一方之突出部的前端角度0 1設爲110°，一方之 突出部之前端的曲率半徑rl設爲1mm，另~方之突出部 的長度d2設爲l〇mm，另一方之突出部的前端角度02設 爲12 0°，另一方之突出部之前端的曲率半徑r2設爲5mm ，接合劑層之一方的突出部與黏著帶的外緣間之距離Π 設爲15mm，接合劑層之另一方的突出部與黏著帶的外緣 間之距離12設爲15mm，設置有接合劑層與黏著帶的積層 體之剝離膜的寬度c設爲290mm。 (2.7 )實施例7 將衝切爲第8圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第8圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑設爲220mm，黏著帶的 直徑Φ b設爲270mm，突出部的長度d設爲2〇mm，突出 部的前端角度0設爲11〇°，突出部之前端的曲率半徑r設 爲1 mm，接合劑層的突出部與黏著帶的外緣間之距離1設 爲5mm，設置有接合劑層與黏著帶的積層體之剝離膜的 -31 - 201206813 寬度C設爲2 90mm。 (2 · 8 )比較例1 將衝切爲第9圖所示之標籤形狀的黏著劑層Cl、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上’並將黏著帶 衝切爲第9圖所示之標籤形狀，去除不必要的部分。接合 劑層上未形成突出部。 接合劑層的直徑Φ a設爲220mm，黏著帶的直徑0b 設爲2 70mm，設置有接合劑層與黏著帶的積層體之剝離 膜的寬度c設爲2 90mm。 (2 · 9 )比較例2 比較例1的樣本中，將黏著劑A1變更爲黏著劑a2。 除此之外，其他與比較例1的樣本爲相同構成》 (2 _ 1 0 )比較例3 比較例1的樣本中，將黏著劑A1變更爲黏著劑B。 除此之外’其他與比較例1的樣本爲相同構成。 (2.1 1 )比較例4 比較例1的樣本中，將黏著劑層C1變更爲黏著劑層 C2 ° 除此之外，其他與比較例1的樣本爲相同構成。 -32- 201206813 (2 · 1 2 )比較例5 比較例1的樣本中，分別將黏著劑層C i變更爲黏著 劑層C2，將黏著劑A1變更爲黏著劑A2。 除此之外’其他與比較例1的樣本爲相同構成。 (2 · 1 3 )比較例6 比較例1的樣本中’分別將黏著劑層C1變更爲黏著 劑層C2，將黏著劑A1變更爲黏著劑b。 除此之外’其他與比較例1的樣本爲相同構成。 (2 . 1 4 )比較例7 將衝切爲第2圖所示之標籤形狀的黏著劑層ci、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑φ a設爲220mm，黏著帶的 直徑<i>b設爲270mm，突出部的長度d設爲3mm，突出 部的前端角度0設爲110°，突出部前端的曲率半徑r設爲 lmm，接合劑層的突出部與黏著帶的外緣間之距離1設爲 22mm，設置有接合劑層與黏著帶的積層體之剝離膜的寬 度c設爲290mm。 (2 · 1 5 )比較例8 將衝切爲第2圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 -33- 201206813 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑設爲220mm ’黏著帶的 直徑Φ b設爲2 70mm，突出部的長度d設爲4mm ’突出 部的前端角度0設爲120。，突出部之前端的曲率半徑r設 爲1mm，接合劑層的突出部與黏著帶的外緣間之距離1設 爲21mm，設置有接合劑層與黏著帶的積層體之剝離膜的 寬度c設爲2 9 0 m m。 (2 · 1 6 )比較例9 將衝切爲第2圖所示之標籤形狀的黏著劑層C1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上’並將黏著帶 衝切爲第2圖所示之標籤形狀’去除不必要的部分。 接合劑層之主要部的直徑設爲220mm，黏著帶的 直徑<i>b設爲270mm’突出部的長度d設爲4mm’突出 部的前端角度0設爲90°，突出部前端的曲率半徑r設爲 4mm，接合劑層的突出部與黏著帶的外緣間之距離1設舄 21mm，設置有接合劑層與黏著帶的積層體之剝離膜的寬 度c設爲290mm。 (2.1 7 )比較例1 0 將衝切爲第2圖所示之標籤形狀的黏著劑層C 1、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第2圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑4a設爲220mm，黏著帶的 • 34- 201206813 直徑Φ b設爲270mm ’突出部的長度d設爲4mm，突出 部的前端角度Θ設爲70°，突出部前端的曲率半徑r設爲 1mm，接合劑層的突出部與黏著帶的外緣間之距離1設爲 21mm’設置有接合劑層與黏著帶的積層體之剝離膜的寬 度c設爲290mm。 (2 · 1 8 )比較例1 1 將衝切爲第8圖所示之標籤形狀的黏著劑層ci、與 塗佈有黏著劑A1之黏著帶積層於剝離膜上，並將黏著帶 衝切爲第8圖所示之標籤形狀，去除不必要的部分。 接合劑層之主要部的直徑4a設爲220mm，黏著帶的 直徑<i>b設爲270mm，突出部的長度d設爲21mm，突出 部的前端角度0設爲Π0°，突出部前端的曲率半徑r設爲 1 m m，接合劑層的突出部與黏著帶的外緣間之距離丨設爲 4mm，設置有接合劑層與黏著帶的積層體之剝離膜的寬度 c 設爲 290mm。 (3 )評估試驗 藉由下列所不之方法來評估實施例及比較例的各樣本 (3 · 1 )剝離力測定 在2 0秒間將實施例及比較例的各樣本貼合於加熱至 70°C之直徑200mm的砂晶圓上’依據JIS-0237來測定接 -35- 201206813 合劑層與黏著帶之剝離力（90°剝離、剝離速度50mm/min )° 對於使用黏著劑B之實施例4及比較例3、6的樣本 ，使用金屬鹵化物燈來照射200mJ/cm2的紫外線，並在該 作業前後測定剝離力。測定結果如第1表〜第3表所示。 (3.2 )貼合試驗，切割框污染的確認 藉由第5圖所示之裝置及方法，在加熱溫度70°C、 貼合速度12mm/s下，將厚度50μηι、直徑200mm的砂晶 圓貼合於實施例及比較例的各樣本。 進行1 0次的上述貼合作業，確認是否發生接合劑層 以從黏著帶捲起一部分之狀態而未貼合於矽晶圓。10次 的貼合作業中，測定接合劑層從黏著帶捲起一部分之次數 。測定結果如第1表~第3表所示。 同時，亦確認在貼合作業時，切割框是否附著於接合 劑層而造成污染。確認結果如第1表~第3表所示。 (3.3 )拾取試驗 使用切割裝置（Disco公司製、DFD6 3 40 )，將貼合 有半導體晶圓之實施例及比較例的各樣本切割爲5mmx 5mm大小。切割後的樣本中，對於使用黏著劑B之實施 例4及比較例3、6的樣本，使用金屬鹵化物燈來照射 2 00mJ/cm2的紫外線。 然後使用拾取裝置（Canon Machinery公司製、CAP- -36- 201206813 3 00 II )，對切割後之各樣本的100個晶片進行拾取’並 測定當中拾取成功之晶片數。測定結果如第1表〜第3表 所示。 (3.4 )接合力的測定 實施例及比較例的樣本中，將切割後所拾取之晶片’ 在150°C-100gf-3秒的條件下安裝在另外準備之I2mmx 1 2mm的矽晶片上，然後在i 8〇i下加熱！小時使接合劑 層硬化’而得測定用樣本。使用剪切接合力試驗機（ Arctec公司製、Series 4000 )，對所得之測定用樣本測定 其剪切接合力。測定結果如第1表~第3表所示。 -37- 201206813 [第1表] 樣本 實施例1 麵例2 實施例3 實施例4 實施例5 實施例6 實施例7 接合劑層 C1 黏著帶 (黏著劑） A1 B A1 標籤 形狀 型式 第2圖 第6圖 第7圖 第8圖 d (mm) 4 10 20 θ(° ) 110 80 110 r (mm) 1 3 1 1 (mm) 21 15 5 剝離力 N/25mm uv前 0.24 0.24 0.24 0.85 0.24 0.24 0.24 uv後 — 一 — 0.10 — 一 一 貼合試驗 不良/進行次數 0/10 0/10 0/10 0/10 0/10 0/10 0/10 切割框 接合劑污染 無 Alt m 無 m m •fnr- M 無 拾取試驗 成功/進行次數 100/100 100/100 100/100 100/100 100/100 100/100 100/100 剪切接合力 MPa 6.1 6.1 6.1 6.1 6.1 6.1 6.1 -38- 201206813 [第2表] 樣本 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 接合劑層 C1 C2 黏著帶 (黏著劑） A1 A2 B A1 A2 B 標籤 形狀 型式 第9圖 d (mm) — θ(。） 一 r (mm) 一 1 (mm) — 剝離力 N/25mm uv前 0.24 1.05 0.85 0.21 1.01 0.82 uv後 — — 0.10 一 一 0.09 貼合試驗 不良/進行次數 10/10 0/10 6/10 2/10 0/10 1/10 切割框 接合劑污染 Μ ini. m 無 拱 無 拾取試驗 成功/進行次數 100/100 0/100 100/100 100/100 0/100 100/100 剪切接合力 MPa 6.1 6.1 6.1 1.8 1.8 1.8 -39- 201206813 [第3表] 樣本 比較例7 比較例8 比較例9 比較例10 比較例11 接合劑層 C1 黏著帶 (黏著劑） A1 標籤 形狀 型式 第2圖 第8圖 d (mm) 3 4 21 θ(° ) 110 120 90 70 110 r (mm) 1 4 1 1 (mm) 22 21 4 剝離力 N/25mm uv前 0.24 0.24 0.24 0.24 0.24 uv後 一 — 一 一 一 貼合試驗 不良/進行次數 3/10 4/10 6/10 4/10 0/10 切割框 接合劑污染 /rrr m /fnr m m «fat m 有 拾取試驗 成功/進行次數 100/100 100/100 100/100 100/100 100/100 剪切接合力 MPa 6.1 6.1 6.1 6.1 6.1 (4 )窮總 如第1表所示，實施例1〜6的各樣本中，可充分地確 保充分的剪切接合力，並且可得到良好的貼合性、拾取性 〇 相對於此，比較例1的樣本中，如第2表所示，由於 黏著帶的剝離力低，雖然拾取性佳，但在貼合試驗中，接 合劑層從黏著帶剝離，在所有次數中均產生安裝不良。 比較例2的樣本中，由於黏著帶的剝離力高，雖然貼 合試驗的結果良好，但在所有次數中均產生拾取不良。 -40- 201206813 比較例3的樣本中，由於使用紫外線硬化型的黏著帶 ，使其在硬化後可充分地降低剝離力，雖然拾取性佳，但 硬化前的剝離力不足，在貼合試驗中，接合劑層從黏著帶 剝離而產生安裝不良。 比較例4〜6的各樣本中，雖然可藉由降低接合劑層的 接合力，來抑制貼合試驗中接合劑層從黏著帶剝離所產生 之安裝不良，但構裝時的剪切接合力亦降低，故不具實用 性。 如第3表所示，比較例7的樣本中，由於接合劑層之 突出部的長度d爲較小的3 mm，所以在接合劑層與黏著 帶之間的保持力不足，在貼合試驗中，接合劑層從黏著帶 剝離而產生安裝不良。 比較例8的樣本中，由於接合劑層之突出部的前端角 度0爲較大的120°，所以在接合劑層與黏著帶之間容易產 生剝離起頭，在貼合試驗中，接合劑層從黏著帶剝離而產 生安裝不良。 比較例9的樣本中，由於接合劑層之突出部前端的曲 率半徑r爲較大的4mm，所以在接合劑層與黏著帶之間容 易產生剝離起頭，在貼合試驗中，接合劑層從黏著帶剝離 而產生安裝不良。 比較例10的樣本中，由於接合劑層之突出部的前端 角度β爲較小的7 0 °，所以在接合劑層與黏著帶之間的保 持力不足，在貼合試驗中，接合劑層從黏著帶剝離而產生 安裝不良。 -41 - 201206813 比較例u的樣本中，雖然貼合性、拾取性良好，但 接合劑層的突出部與黏著帶的外緣間之距離1爲較小的 4 mm ’對切割框造成污染，故不具實用性。 從上述內容中可得知，將接合劑層之突出部的長度d 和前端角度0、前端的曲率半徑r、接合劑層的突出部與 黏著帶的外緣間之距離設爲一定範圍者，對於確保充分的 剪切接合力’並且可得到良好的貼合性（包含防止切割框 的污染者）、拾取性是有用的。 【圖式簡單說明】 第1圖係顯示晶圓加工用載帶的槪略構成之圖面。 第2圖係顯示接合劑層及黏著帶的槪略形狀之俯視圖 〇 第3圖係顯示剝離膜、接合劑層及黏著帶的槪略積層 構造之縱向剖面圖。 第4圖係顯示將晶圓加工用載帶貼合於晶圓及環框之 槪略狀態之縱向剖面圖》 第5圖係用以槪略地說明將晶圓加工用載帶貼合於晶 回及環框之裝置及方法之圖面。 第6圖係顯示第2圖的變形例（1 )之俯視圖。 第7圖係顯示第2圖的變形例（2)之俯視圖。 第8圖係顯示第2圖的變形例（3 )之俯視圖。 第9圖係顯示先前技術及比較例1〜6的接合劑層的形 狀，是從接合劑層所觀看之俯視圖。 -42- 201206813 第1 〇圖係顯示在先前技術中，接合劑層從黏著帶剝 離之照片。 【主要元件符號說明】 1 :晶圓加工用載帶 2 :剝離膜 2a :表面 3 :接合劑層 3 a :主要部 3b(3bl、3b2):突出部 3 c :前端部 3 d :突出部 3 e :前端部 4 :黏著帶 4a :標籤部 4b :周邊部 1 0 :芯材 100 :捲取輥 1 0 1 :剝離用楔 1 〇 2 :吸附台 1 0 3 :貼合輥 201 :剝離膜 202 :接合劑層 203 :黏著帶 -43- 201206813 A:剝離膜的抽出方向 B:剝離膜的拉離方向(1 · 3 ) Adhesive B First, an acrylic copolymer composed of isodecyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and having a mass average molecular weight of 800,000 and a glass transition temperature of -30 ° C was produced. Things. Then, 20 parts by weight of trimethyl propyl phthalocyanine 26-201206813 acid trimethylolpropane ester was added as a compound having a radiation-curable carbon-carbon double bond, a polyisocyanate compound CORONATE L (100 parts by weight of the copolymer). 7 parts by weight of a hardening agent and 5 parts by weight of an Irgacure 184 (manufactured by Nihon Ciba-Geigy Co., Ltd.) as a photopolymerization initiator, and a radiation curable adhesive B, were obtained by a Nippon Polyurethane Industry Co., Ltd. product. (1.4) Base material film A resin composition composed of a polypropylene resin and a hydrogenated styrene-butadiene copolymer was melt-kneaded and molded to obtain a base film having a thickness of 10 μm. Then, an adhesive is applied to the substrate film, and dried in a hot air drying oven to obtain an adhesive tape having a thickness of 1 Ομηι of the adhesive layer and the substrate film. (1 · 5) Adhesive layer C 1 There are many types of adhesive layer (grain bonding layer), which can be obtained by any method, and here, it is a 2-phenylimidazole 5 which is an epoxy hardener. 0.5 parts by weight by weight of xylene diamine, 1 part by weight of an acrylic copolymer (glycidyl acrylate copolymer), 100 parts by weight of a cresol novolac type epoxy resin, and a bisphenol novolac type phenol resin To 1 part by weight, 20 parts by weight of a nano-sized cerium oxide filled with an average particle diameter of 0.012 μm was added to obtain an adhesive C 1 . This was applied to a release film, followed by drying at 110 ° C for 2 minutes to prepare an adhesive layer having a thickness of 10 Km. -27- 201206813 Then, in accordance with the shape of the sample to be described later, the adhesive layer is die-cut into the predetermined shapes shown in Fig. 2 and Fig. 6 to Fig. 9, and the labels continuously arranged in an island shape are left and removed from the release film. The portion other than the island shape of the adhesive layer is removed. (1.6) Adhesive layer C2 5 parts by weight of 2-phenylimidazole as an epoxy curing agent and 0.5 parts by weight of xylene diamine are blended in an acrylic copolymer (glycidyl acrylate copolymer). a portion, a cresol novolac type epoxy resin, 1 part by weight, and a dimethyl phenol phenol resin, 1 part by weight, and added 60 parts by weight of a nano cerium oxide filling material having an average particle diameter of 0.01 2 μm Get adhesive C2. This was applied to a release film and then dried at Π ° C for 2 minutes to prepare an adhesive layer having a thickness of 〇 μμTM. Then, in accordance with the shape of the sample to be described later, the adhesive layer is die-cut into a predetermined shape as shown in Fig. 9, and the labels are continuously arranged in an island shape, and the portions other than the island shape of the adhesive layer are removed from the release film. (2) Preparation of sample (2.1) Example 1 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive Α1 were laminated on the release film, and The adhesive tape is die cut into the shape of the label shown in Fig. 2 to remove unnecessary portions. The diameter of the main portion of the bonding layer is 4 a. The diameter of the adhesive tape is 22 mm. The diameter of the adhesive tape is 270 mm, and the length d of the protruding portion is set to 4 mm. The protrusion -28 - 201206813 The front end angle β of the portion is set to 11 〇 °, The radius of curvature r of the front end of the portion is set to 1 mm, the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape is set to 21 mm, and the width c of the release film provided with the laminated body of the adhesive layer and the adhesive tape is set to 290 mm. . (2.2) Example 2 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape was die-cut into the second The label shape shown in the figure removes unnecessary parts. The diameter Φ a of the main portion of the bonding layer is set to 220 mm, the diameter Φ b of the adhesive tape is set to 27 mm, the length d of the protruding portion is set to 4 mm, and the front end angle 0 of the protruding portion is set to 80°, and the curvature of the front end of the protruding portion The radius r was set to 1 mm, and the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was 21 mm, and the width c of the release film provided with the laminate of the adhesive layer and the adhesive tape was set to 290 mm. (2.3) Example 3 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape was die-cut into the second figure. The label shape shown removes unnecessary parts. The diameter Φ a of the main portion of the adhesive layer was set to 220 mm, the diameter 0b of the adhesive tape was set to 270 mm, and the length d of the protruding portion was set to 10 mm. The front end angle 0 of the protruding portion was set to 110. The radius of curvature r of the front end of the protruding portion is set to 3 mm, and the distance between the protruding portion of the bonding agent layer and the outer edge of the adhesive tape is set to -15 to 201206813, and the peeling film of the laminated body provided with the adhesive layer and the adhesive tape is provided. The width c is set to 290 mm. (2.4) Example 4 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive B were laminated on the release film, and the adhesive tape was die-cut into the second figure. The label shape shown 'removes unnecessary parts. The diameter of the main portion of the bonding layer is set to 220 mm. The diameter of the adhesive tape is <i>b is 270 mm, and the length d of the protruding portion is set to 10 mm. The front end angle 0 of the protruding portion is the radius of curvature of the front end of the protruding portion. r was set to 3 mm, the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was set to 15 mm, and the width c of the release film provided with the laminated body of the adhesive layer and the adhesive tape was set to 290 mm. (2·5) Example 5 The adhesive layer C1 punched into the label shape shown in Fig. 6 and the adhesive tape coated with the adhesive A 1 were laminated on the release film, and the adhesive tape was die-cut into The label shape shown in Figure 6 removes unnecessary parts. The diameter of the main portion of the bonding layer is set to 220 mm, the diameter 0b of the adhesive tape is set to 270 mm, the lengths d1 and d2 of the protruding portions are set to 10 mm, and the front end angles 01 and 02 of the protruding portions are set to 110°, and the front end of the protruding portion is The radius of curvature rl and r2 are set to 1 mm, and the distances 11 and 12 between the protruding portion of the bonding agent layer and the outer edge of the adhesive tape are set to 15 mm, and the width c of the peeling film provided with the laminated body of the bonding agent layer and the adhesive tape is set. It is 2 90mm. -30- 201206813 (2 · 6) Example 6 The adhesive layer C1 which is die-cut into the label shape shown in Fig. 7 and the adhesive tape coated with the adhesive AI are laminated on the release film, and the adhesive tape is bonded. The die cut is the label shape shown in Fig. 7, and unnecessary portions are removed. The diameter 4a of the main portion of the adhesive layer is 22 mm, the diameter Φ b of the adhesive tape is 2 70 mm, the length dl of one of the projections is 10 mm, and the front end angle 0 1 of one of the projections is set to 110°. The radius of curvature rl of the front end of one of the protrusions is set to 1 mm, the length d2 of the protrusion of the other side is set to l〇mm, and the front end angle 02 of the other protrusion is set to 120°, and the protrusion of the other side is before The radius of curvature r2 of the end is set to 5 mm, and the distance Π between the projection of one of the adhesive layers and the outer edge of the adhesive tape is set to 15 mm, and the distance between the other projection of the adhesive layer and the outer edge of the adhesive tape is set to 12 mm. The width c of the release film of the laminate provided with the adhesive layer and the adhesive tape was set to 290 mm. (2.7) Example 7 The adhesive layer C1 punched into the label shape shown in Fig. 8 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape was die-cut into the eighth figure. The label shape shown removes unnecessary parts. The diameter of the main portion of the bonding layer is set to 220 mm, the diameter Φ b of the adhesive tape is set to 270 mm, the length d of the protruding portion is set to 2 mm, and the front end angle 0 of the protruding portion is set to 11 〇, the curvature of the front end of the protruding portion. The radius r is set to 1 mm, and the distance 1 between the protruding portion of the bonding agent layer and the outer edge of the adhesive tape is set to 5 mm, and the peeling film of the laminated body provided with the bonding agent layer and the adhesive tape is -31 - 201206813 Width C is set to 2 90mm. (2·8) Comparative Example 1 The adhesive layer C1 which is die-cut into the label shape shown in Fig. 9 and the adhesive tape coated with the adhesive A1 are laminated on the release film, and the adhesive tape is die-cut. The label shape shown in Figure 9 removes unnecessary parts. No protrusions are formed on the bonding layer. The diameter Φ a of the adhesive layer was set to 220 mm, the diameter 0b of the adhesive tape was set to 2 70 mm, and the width c of the release film provided with the laminate of the adhesive layer and the adhesive tape was set to 2 90 mm. (2·9) Comparative Example 2 In the sample of Comparative Example 1, the adhesive A1 was changed to the adhesive a2. Other than this, the other samples of Comparative Example 1 have the same constitution. (2 _ 1 0 ) Comparative Example 3 In the sample of Comparative Example 1, the adhesive A1 was changed to the adhesive B. Other than the above, the other samples of Comparative Example 1 have the same configuration. (2.1 1 ) Comparative Example 4 In the sample of Comparative Example 1, the same configuration as the sample of Comparative Example 1 was carried out except that the adhesive layer C1 was changed to the adhesive layer C2 ° . -32-201206813 (2 · 1 2 ) Comparative Example 5 In the sample of Comparative Example 1, the adhesive layer C i was changed to the adhesive layer C2, and the adhesive A1 was changed to the adhesive A2. Other than the above, the other samples of Comparative Example 1 have the same configuration. (2 · 1 3 ) Comparative Example 6 In the sample of Comparative Example 1, the adhesive layer C1 was changed to the adhesive layer C2, and the adhesive A1 was changed to the adhesive b. Other than the above, the other samples of Comparative Example 1 have the same configuration. (2. 14) Comparative Example 7 The adhesive layer ci which was die-cut into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape was die-cut into The shape of the label shown in Figure 2 removes unnecessary parts. The diameter φ a of the main portion of the adhesive layer was set to 220 mm, the diameter of the adhesive tape <i>b was 270 mm, the length d of the protruding portion was set to 3 mm, and the front end angle 0 of the protruding portion was set to 110°, and the front end of the protruding portion was set. The radius of curvature r was set to 1 mm, the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was set to 22 mm, and the width c of the release film provided with the laminated body of the adhesive layer and the adhesive tape was set to 290 mm. (2 · 1 5 ) Comparative Example 8 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape-33- 201206813 Die-cut into the shape of the label shown in Figure 2, removing unnecessary parts. The diameter of the main portion of the adhesive layer was set to 220 mm. The diameter Φb of the adhesive tape was set to 2 70 mm, and the length d of the protruding portion was set to 4 mm. The front end angle 0 of the protruding portion was set to 120. The radius of curvature r of the front end of the protruding portion is set to 1 mm, the distance 1 between the protruding portion of the bonding agent layer and the outer edge of the adhesive tape is set to 21 mm, and the width c of the peeling film provided with the laminated body of the bonding agent layer and the adhesive tape is set. It is 2 90 mm. (2 · 1 6 ) Comparative Example 9 The adhesive layer C1 punched into the label shape shown in Fig. 2 and the adhesive layer coated with the adhesive A1 were laminated on the release film' and the adhesive tape was die-cut into The label shape shown in Figure 2 'removes unnecessary parts. The diameter of the main portion of the bonding layer is set to 220 mm, the diameter of the adhesive tape is <i>b is 270 mm, and the length d of the protruding portion is set to 4 mm. The front end angle 0 of the protruding portion is set to 90°, and the curvature of the front end of the protruding portion is set. The radius r was set to 4 mm, the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was set to 21 mm, and the width c of the release film provided with the laminated body of the adhesive layer and the adhesive tape was set to 290 mm. (2.1 7) Comparative Example 1 0 The adhesive layer C 1 punched into the label shape shown in Fig. 2 and the adhesive tape coated with the adhesive A1 were laminated on the release film, and the adhesive tape was die-cut into The shape of the label shown in Figure 2 removes unnecessary parts. The diameter 4a of the main portion of the adhesive layer is set to 220 mm, and the diameter of the adhesive tape is 34-201206813. The diameter Φ b is 270 mm. The length d of the protruding portion is set to 4 mm, and the front end angle 突出 of the protruding portion is set to 70°. The radius of curvature r was set to 1 mm, and the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was set to 21 mm. The width c of the release film provided with the laminate of the adhesive layer and the adhesive tape was set to 290 mm. (2 · 1 8 ) Comparative Example 1 1 The adhesive layer ci which is die-cut into the label shape shown in Fig. 8 and the adhesive tape coated with the adhesive A1 are laminated on the release film, and the adhesive tape is die-cut. For the label shape shown in Fig. 8, remove unnecessary parts. The diameter 4a of the main portion of the adhesive layer is set to 220 mm, the diameter of the adhesive tape <i>b is 270 mm, the length d of the protruding portion is set to 21 mm, and the front end angle 0 of the protruding portion is set to Π0°, and the front end of the protruding portion is The radius of curvature r was set to 1 mm, and the distance 丨 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was set to 4 mm, and the width c of the release film provided with the laminated body of the adhesive layer and the adhesive tape was set to 290 mm. (3) Evaluation test Each sample of the examples and the comparative examples was evaluated by the following methods (3 · 1 ). Peel force measurement Each sample of the examples and the comparative examples was attached to the heating to 70 ° over 20 seconds. C on a sand wafer of 200 mm in diameter 'measured according to JIS-0237-35-201206813 Peel force of the mixture layer and adhesive tape (90° peeling, peeling speed 50 mm/min) ° Example 4 using Adhesive B In the samples of Comparative Examples 3 and 6, ultraviolet rays of 200 mJ/cm 2 were irradiated with a metal halide lamp, and the peeling force was measured before and after the operation. The measurement results are shown in Tables 1 to 3. (3.2) Bonding test, confirmation of contamination of the cutting frame By means of the apparatus and method shown in Fig. 5, a sand wafer having a thickness of 50 μm and a diameter of 200 mm is attached at a heating temperature of 70 ° C and a laminating speed of 12 mm/s. Each sample of the examples and comparative examples was combined. The above-mentioned bonding industry was carried out 10 times, and it was confirmed whether or not the bonding agent layer was rolled up from the adhesive tape and was not bonded to the silicon wafer. In the ten-time bonding industry, the number of times the bonding layer was rolled up from the adhesive tape was measured. The measurement results are shown in Tables 1 to 3. At the same time, it was also confirmed whether the cutting frame adhered to the bonding agent layer and caused contamination during the bonding business. The confirmation results are shown in Tables 1 to 3. (3.3) Pick-up test Each of the samples of the examples and the comparative examples to which the semiconductor wafers were bonded was cut into a size of 5 mm x 5 mm using a dicing apparatus (Disco 6 D40, manufactured by Disco Corporation). In the sample after the dicing, the sample of Example 4 and Comparative Examples 3 and 6 using Adhesive B was irradiated with ultraviolet rays of 200 mJ/cm 2 using a metal halide lamp. Then, using a pick-up device (manufactured by Canon Machinery Co., Ltd., CAP--36-201206813 3 00 II), 100 wafers of each sample after cutting were picked up, and the number of wafers successfully picked up was measured. The measurement results are shown in Tables 1 to 3. (3.4) Measurement of bonding force In the samples of the examples and the comparative examples, the wafers picked up after the dicing were mounted on a separately prepared I2 mm x 12 mm ytterbium wafer at 150 ° C - 100 gf - 3 seconds, and then Heat under i 8〇i! A sample for measurement was obtained by hardening the bonding layer in an hour. The shear bonding strength of the obtained measurement sample was measured using a shear bonding strength tester (manufactured by Arctec Co., Ltd., Series 4000). The measurement results are shown in Tables 1 to 3. -37-201206813 [Table 1] Sample Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Adhesive layer C1 Adhesive tape (adhesive) A1 B A1 Label shape pattern Fig. 2 Fig. 6 Fig. 7 Fig. 8 Fig. d (mm) 4 10 20 θ(°) 110 80 110 r (mm) 1 3 1 1 (mm) 21 15 5 Peeling force N/25mm uv before 0.24 0.24 0.24 0.85 0.24 0.24 After 0.24 uv - one - 0.10 - one-to-one test failure / number of times 0/10 0/10 0/10 0/10 0/10 0/10 0/10 cutting frame cement contamination without Alt m no mm • fnr - M No pick-up test success / number of times 100/100 100/100 100/100 100/100 100/100 100/100 100/100 Shear joint force MPa 6.1 6.1 6.1 6.1 6.1 6.1 6.1 -38- 201206813 [Table 2 Sample Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Adhesive layer C1 C2 Adhesive tape (adhesive) A1 A2 B A1 A2 B Label shape pattern Fig. 9 (d) - θ ( .) a r (mm) - 1 (mm) - peeling force N / 25mm uv before 0.24 1.05 0.85 0.21 1.01 0.82 uv after - 0.10 one by one 0.09 fit test failure / number of times 10/10 0/10 6/10 2/10 0/10 1/10 Cutting frame cement contamination Μ ini. m No arch no pick-up test success / number of times 100/100 0/100 100/100 100/100 0/ 100 100/100 Shear joint force MPa 6.1 6.1 6.1 1.8 1.8 1.8 -39- 201206813 [Table 3] Sample Comparative Example 7 Comparative Example 8 Comparative Example 9 Comparative Example 10 Comparative Example 11 Adhesive layer C1 Adhesive tape (adhesive) A1 Label shape type Fig. 2 Fig. 8 diagram d (mm) 3 4 21 θ(°) 110 120 90 70 110 r (mm) 1 4 1 1 (mm) 22 21 4 Peeling force N/25mm uv front 0.24 0.24 0.24 0.24 0.24 uv after one - one by one bonding test failure / number of times 3/10 4/10 6/10 4/10 0/10 cutting frame cement contamination / rrr m / fnr mm «fat m has a successful picking test / Number of times of 100/100 100/100 100/100 100/100 100/100 Shear joint force MPa 6.1 6.1 6.1 6.1 6.1 (4) Poor total As shown in Table 1, in each of the samples of Examples 1 to 6, The sufficient shear bonding strength was sufficiently ensured, and good fit and pick-up properties were obtained. In contrast, in the sample of Comparative Example 1, as shown in the second table, the adhesive tape was peeled off. Low, although the pickup good, but in the bonding test, the adhesive layer is peeled from the adhesive tape, are mounted failure is generated in all the times. In the sample of Comparative Example 2, since the peeling force of the adhesive tape was high, although the result of the bonding test was good, picking failure occurred in all the times. -40-201206813 In the sample of Comparative Example 3, since the ultraviolet curable adhesive tape was used, the peeling force was sufficiently reduced after curing, and the pick-up property was good, but the peeling force before curing was insufficient, and in the bonding test The adhesive layer is peeled off from the adhesive tape to cause mounting failure. In each of the samples of Comparative Examples 4 to 6, the bonding strength due to the peeling of the adhesive layer from the adhesive tape in the bonding test was suppressed by reducing the bonding strength of the bonding layer, but the shear bonding force at the time of the assembly was suppressed. It is also reduced, so it is not practical. As shown in the third table, in the sample of Comparative Example 7, since the length d of the protruding portion of the bonding agent layer was 3 mm, the holding force between the bonding agent layer and the adhesive tape was insufficient, and the bonding test was performed. In the middle, the adhesive layer is peeled off from the adhesive tape to cause mounting failure. In the sample of Comparative Example 8, since the front end angle 0 of the protruding portion of the adhesive layer was 120°, the peeling start was likely to occur between the adhesive layer and the adhesive tape, and in the bonding test, the adhesive layer was The adhesive tape is peeled off and the mounting is poor. In the sample of Comparative Example 9, since the radius of curvature r of the tip end of the protruding portion of the bonding agent layer was 4 mm, the peeling start was likely to occur between the bonding agent layer and the adhesive tape, and in the bonding test, the bonding layer was The adhesive tape is peeled off and the mounting is poor. In the sample of Comparative Example 10, since the front end angle β of the protruding portion of the bonding agent layer was 70° which was small, the holding force between the bonding agent layer and the adhesive tape was insufficient, and in the bonding test, the bonding agent layer Detachment from the adhesive tape causes poor mounting. -41 - 201206813 In the sample of Comparative Example u, although the fit and the pick-up property were good, the distance 1 between the protruding portion of the adhesive layer and the outer edge of the adhesive tape was small 4 mm', which caused contamination of the cut frame. Therefore, it is not practical. From the above, it can be seen that the length d of the protruding portion of the bonding agent layer, the front end angle 0, the radius of curvature r of the tip end, and the distance between the protruding portion of the bonding agent layer and the outer edge of the adhesive tape are set to a certain range. Pickability is useful for ensuring sufficient shear bonding force 'and good fit (including polluters to prevent cutting frames). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a schematic configuration of a carrier tape for wafer processing. Fig. 2 is a plan view showing a schematic shape of a bonding layer and an adhesive tape. 〇 Fig. 3 is a longitudinal cross-sectional view showing a structure of a release layer, a bonding layer, and an adhesive layer. Fig. 4 is a longitudinal sectional view showing a state in which a wafer processing carrier tape is attached to a wafer and a ring frame. Fig. 5 is a schematic view for attaching a wafer processing carrier tape to a crystal Back to the drawing of the device and method of the ring frame. Fig. 6 is a plan view showing a modification (1) of Fig. 2; Fig. 7 is a plan view showing a modification (2) of Fig. 2; Fig. 8 is a plan view showing a modification (3) of Fig. 2; Fig. 9 is a plan view showing the shape of the bonding layer of the prior art and Comparative Examples 1 to 6, as viewed from the bonding layer. -42- 201206813 The first figure shows a photograph of the adhesive layer peeled off from the adhesive tape in the prior art. [Description of main component symbols] 1 : Carrier tape for wafer processing 2 : Release film 2a : Surface 3 : Adhesive layer 3 a : Main portion 3b (3b1, 3b2): Projection portion 3 c: Front end portion 3 d: Projection portion 3 e : front end portion 4 : adhesive tape 4 a : label portion 4 b : peripheral portion 1 0 : core material 100 : winding roller 1 0 1 : peeling wedge 1 〇 2 : adsorption table 1 0 3 : bonding roller 201 : peeling Film 202: Adhesive layer 203: Adhesive tape -43-201206813 A: Extraction direction of release film B: Pull-off direction of release film