[go: up one dir, main page]

TW201206062A - Electronic component - Google Patents

Electronic component Download PDF

Info

Publication number
TW201206062A
TW201206062A TW100102250A TW100102250A TW201206062A TW 201206062 A TW201206062 A TW 201206062A TW 100102250 A TW100102250 A TW 100102250A TW 100102250 A TW100102250 A TW 100102250A TW 201206062 A TW201206062 A TW 201206062A
Authority
TW
Taiwan
Prior art keywords
coil
layer
resin layer
magnetic
electronic component
Prior art date
Application number
TW100102250A
Other languages
Chinese (zh)
Inventor
Naoki Mizoguchi
Masato Nomiya
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of TW201206062A publication Critical patent/TW201206062A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/09—Filters comprising mutual inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1758—Series LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0066—Printed inductances with a magnetic layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0071—Constructional details comprising zig-zag inductor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0078—Constructional details comprising spiral inductor on a substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)

Abstract

Disclosed is an electronic component with which generation of defective products in the manufacturing process can be suppressed and also with which magnetic permeability and dielectric constant can be readily adjusted. A magnetic resin layer (3) is provided on the main face of a multilayer substrate (2) formed by baking, and therefore there is no need for the unified simultaneous baking of a laminated dielectric ceramic layer and magnetic ceramic layer that is conventionally performed. Also, there is no risk at all of generation of defects at the interface between the multilayer substrate (2) and the magnetic resin layer (3), said defects being caused by heat when baking, and consequently generation of defective products in the manufacturing process can be suppressed. The dielectric constant of the multilayer substrate (2) can be readily adjusted by forming the multilayer substrate (2) by laminating and baking a ceramic green sheet having the desired dielectric constant. Furthermore, the magnetic permeability of the magnetic resin layer (3) can be readily adjusted by mixing various types of magnetic material and resin material, and consequently the magnetic permeability and dielectric constant can be readily adjusted.

Description

201206062 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種電容器或形成線圏之圖案設在内部 之積層型電子零件。 ° 【先前技術】 以往，已知作為將積層後磁性體陶瓷層及電介質陶瓷 層同時燒成而形成之積層型濾波器之電子零件（例如，參照 專利文獻1)»例如’在圖40中作為電子零件 今丨丁〈—例顯示之 積層型濾波器15〇〇,導體圖案1513之線圈層15〇4係設在 磁性體陶瓷層1501之内部，二片以上之内部電極1505〜 1 508配置在内部而形成有電容器之電介質陶瓷層1502, 1503分別積層在磁性體陶瓷層15〇1 <上下。此外，電容器 與電感器層1504連接於外部電極1510, 1511而構成積層型 濾波器1 5 〇 〇。 在積層型;慮波器1 5 〇 〇 ,藉由將形成磁性體陶究層1 5 〇 1 之複數個磁性體陶瓷坯片、形成電介質陶瓷層1502，1503 之複數個電介質陶瓷坯片、及形成有既定配線圖案之陶瓷 片積層而構成多層基板。此外’藉由將積層複數個陶瓷 述片而構成之多層基板在100CTC前後燒成而製造積層型濾 °" 〇〇(亦即 ’ LTCC(Low Temperature Co-fired Ceramic : 低溫同時燒4士物 &、，D陶瓷）基板）。此外，圖40係顯示習知電子零 件之例之積層型濾波器1 500的圖，（a)係透視積層型濾波 器1 5 0 0之★屢& 不體顯示内部構成的立體圖，（b)係顯示外觀的立 體圖。 201206062 專利文獻1:日本特開2003— 69358號公報（段落 [0003]、[〇〇〇5]、圖 9、圖 1〇 等） 【發明内容】 然而’在同時燒成積層型濾波器1 50〇時，由於各陶充 坯片内所含之溶劑或結合劑等蒸發，因此磁性體陶瓷層 1501及電介質陶瓷層15〇2, 15〇3收縮’但不同材料之磁性 體陶瓷層1501及電介質陶瓷層15〇2，15〇3分別之收縮量不 同，因此在各層1501〜1503之邊界容易產生應力。是以， 在同時燒成之多層基板有產生彎曲或扭曲、變形、裂痕等 之虞，在積層型濾波器1500之製程，若在多層基板產生贊 曲或扭曲、變形、裂痕等’則會導致在燒成之後之步驟產 生缺陷、或製造後積層型遽波器15GG構裝時之構裝不良。 又，因磁性體陶究層15〇1及電介質陶竞層15〇2, 15〇3 分別之收縮量之不同，力夂思 门在各層1501〜丨5〇3之邊界形成空間 而在多層基板内部產生剝離，則會有對線圈及 性造成影響之透磁率或介電 ° 特 干係數產生變化之虞。若 1501〜丨503之透磁率 右谷層 電係數產生變化，則無法獲得所 名人之線圈特性及電容器特性。 為了解決上述問顏，t I + 、· 亦考慮選定構成各層1501〜1503 瓷之組成材料以使磁性體 1502 ,χ. 充層15〇1及電介質陶瓷層 陶―之透it了料受到限定，因此_ 數之選擇範圍大幅：窄電”陶究層15〇2，_之介電係 r田泛乍。是以， 會產生無法獲得具有所欲 201206062 ^生之積層型渡波器i谓或即使得到所欲特性、 波盗1 500之尺寸亦變大等問題。 i濾 本發明係有鐘於上述問題而構成，其目的在 種可抑制製程中不良品之產生，且可 、棱仏一 電係數之電子零件。 °°透磁率及介 為了達到上述目的，本發明之電子零件， 基板，將積層後陶究述片燒成而形成；/ 係設在該多層基板之至少一主面(請求項丨)。軸曰層’ :|發明之電子零件，進一步具備形成線圈之 圖案亦可（請求項2)。 ”’裏圈 又’該線圈圖案係在該多層某 旋狀亦可（請求項3)。 >層基板之積層方向形成為螺 又，該線圈圓案係以與該磁性體樹 置亦可（請求項4)。 女碉心方式5又 又，δ玄線圈圖索$ $卜 之内部亦可(請求項5)'分係設在該磁性體樹脂層 之：面it備設在與該多層基板相反側之該磁性體 層；該金屬膜層係以俯視時與該線 〜、ν彳刀、重疊之方式設置亦可（請求項6)。201206062 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a capacitor or a laminated electronic component in which a pattern of turns is formed. [Prior Art] As an electronic component of a multilayer filter formed by simultaneously firing a laminated magnetic ceramic layer and a dielectric ceramic layer (see, for example, Patent Document 1), for example, In the present invention, the laminated layer filter 15 of the conductor pattern 1513 is disposed inside the magnetic ceramic layer 1501, and the two or more internal electrodes 1505 to 1 508 are disposed. The dielectric ceramic layers 1502 and 1503 having capacitors formed therein are laminated on the magnetic ceramic layers 15〇1 < Further, the capacitor and inductor layer 1504 are connected to the external electrodes 1510 and 1511 to constitute a build-up type filter 15 5 〇 。. a plurality of dielectric ceramic green sheets forming a dielectric ceramic layer 1502, 1503, and a plurality of dielectric ceramic green sheets forming a dielectric ceramic layer 15 5 〇 1 , and a plurality of dielectric ceramic green sheets forming a magnetic ceramic layer 15 5 〇 1 A ceramic sheet layer having a predetermined wiring pattern is formed to constitute a multilayer substrate. In addition, 'multilayer substrate composed of a plurality of ceramic sheets is fired before and after 100 CTC to produce a laminated filter. 亦 (that is, 'LTCC (Low Temperature Co-fired Ceramic) &,, D ceramic) substrate). In addition, FIG. 40 is a view showing a laminated type filter 1500 of an example of a conventional electronic component, and (a) is a perspective view of a perspective laminated type filter 1500, and an internal structure is not shown. ) is a perspective view showing the appearance. 201206062 Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-69358 (paragraph [0003], [〇〇〇5], FIG. 9, FIG. 1〇, etc.) [Summary of the Invention] However, the simultaneous firing of the build-up type filter 1 50 In the case of cerium, since the solvent or the binder contained in each of the ceramic filling sheets evaporates, the magnetic ceramic layer 1501 and the dielectric ceramic layer 15〇2, 15〇3 shrink, but the magnetic ceramic layer 1501 and the dielectric of different materials are used. Since the shrinkage amounts of the ceramic layers 15〇2 and 15〇3 are different, stress is likely to occur at the boundary between the respective layers 1501 to 1503. Therefore, in the multilayer substrate which is fired at the same time, there are defects such as bending, distortion, deformation, cracking, etc., and in the process of the laminated filter 1500, if a multi-layer substrate is produced, such as distortion, distortion, crack, etc., A defect occurs in the step after the firing, or the manufacturing failure occurs in the post-production laminated chopper 15GG. Moreover, due to the difference in the amount of shrinkage between the magnetic ceramic layer 15〇1 and the dielectric pottery layer 15〇2, 15〇3, Li Si Simen forms a space at the boundary of each layer 1501~丨5〇3 on the multilayer substrate. If the internal peeling occurs, there will be a change in the permeability or dielectric constant coefficient that affects the coil and the properties. If the magnetic permeability of the right valley layer changes from 1501 to 丨503, the coil characteristics and capacitor characteristics of the celebrity cannot be obtained. In order to solve the above problem, t I + , · also consider selecting the constituent materials constituting each layer 1501 to 1503 porcelain so that the magnetic body 1502, the filling layer 15〇1, and the dielectric ceramic layer ceramics are limited. Therefore, the choice range of _ number is large: narrow electric" ceramic layer 15 〇 2, _ dielectric system r field ubiquinone. Yes, it will not be able to obtain the 201206062 ^ layered type of ferrite i or even The problem of obtaining the desired characteristics and the size of the Boss 1 500 is also increased. The invention of the present invention is constituted by the above problems, and the object thereof is to suppress the occurrence of defective products in the process, and it is possible to The electronic component of the coefficient. °° Permeability and the above-mentioned purpose, the electronic component of the present invention, the substrate is formed by firing the laminated ceramic film; / is disposed on at least one main surface of the multilayer substrate (request Item 丨).Axis 曰 layer ' :|Invented electronic parts, further having a pattern for forming a coil (request item 2). "The inner circle and the 'coil pattern' are also in the multi-layered shape. 3). > The lamination direction of the layer substrate is formed as a spiral, and the coil rounding is also possible with the magnetic body (request item 4). The 碉 玄 方式 方式 又 δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ The magnetic layer may be provided so as to overlap with the line 〜 ν 俯视 in plan view (request 6).

又，本發明之電子愛I 振器圖案亦可(請求項7)件，進-步具備形成譜振器之諸 "mr振器圖案，形成具有第1線圈之第1諸 振益之第Is皆振器阁安 器之第2諸振器圖宰、在:形成具有第2線圈之第2諸振 茱，在俯視時係並排設置，該磁性體樹 6 201206062 脂層係設在至少形成該第,嫂_ 贫，6 人/弟1線圈之第1線圈圖案與形成該 第2線圈之第2線圈圖案之間亦可（請求項8)。 又’配置在該第1線圈圖案與該第2線圈圖案之間之 腔體係設在該多層基核，产μ & + ‘ 在忒腔體填充有磁性體樹脂亦可 (請求項9)。 又’進一步具備遮罩層，係設在設有該磁性體樹脂層 之s亥多層基板之主面；节说薄品在•、丨阁从& 遮罩層係以圍繞該磁性體樹脂層 之方式設置亦可（請求項1〇)。 又，該磁性體樹脂層係藉由透磁率不同之複數層形成 亦可（清求項11)。 、根據請求項1之發明，在將積層後陶竞述片燒成而形 成之多層基板之至少—主面設置磁性體樹脂層。亦即，作 為電介質陶莞層，II由燒成形成多層基板，在形成後之多 層基板之至少—主面設置磁性體樹脂層，目此無須如以往 般將電介質陶瓷層與磁性體陶瓷層加以積層並一體同時燒 成，因此在多層S板與磁性體樹脂層之邊I，完全無產: 起因於燒成時之熱之彎曲或扭曲、變形、裂痕、空間等之 虞，可抑制製程中不良品之產生。又，將包含磁性層之述 片燒成之情形，一般而言係在氧化環境氣氛中燒成，但此 清形在内σρ使用之電極必須使用銀等之不易氧化之金 屬 在本構造，由於在燒成後賦予磁性層.，因此即使在 還原環境氣氛中亦可將形成有内部圖案之坯片燒成。因 此’内部電極亦可使用銅電極等之容易氧化之金屬。 又，藉由將具有所欲介電係數之陶瓷坯片加以積層並 201206062 燒成而形成多層基板’彳容易調整多層基板之介電係數， 又，藉由混合各種磁性體材料與樹脂材料，可容易調整磁 性體樹脂層之透磁率，因此可容易調整透磁率及介電係數。 根據請求項2之發明，本發明之電子零件，進一步具 備形成線圈之線圈圖案，此線圏圖案，係以從線圏產生之 磁場之-部分通過磁性層中之方式形成之線圈圖案，藉由 調整磁性體樹脂層之透磁率，即使*變更線圏圖案亦可容 易調整線圏之電感，因此非常實用…藉由調整磁性體 樹脂層之透磁率，即使縮小線圈圖案亦可獲得較大電感， 因此可謀求電子零件之小型化。 根據請求項3之發明，線圏圖案係在多層基板之積層 方向形成為螺旋狀，因此線圈之電感與對積層方向之線圈 之ϋ數之平方成正比變大，❻由於對線圈圖案通電而產生 之磁通集中在沿著線圈中心轴之方向，因此藉由在多層基 板之至少-主面設置磁性體樹脂層’能使集中在沿著線圈 中心軸之方向產生之磁通之磁通密度高效率變大，因此能 進一步尚效率調整線圈之電感使其變大。 根據請求項4之發明，線圈圖案係以與磁性體樹脂層 接觸之方式設置’藉由調整磁性體樹脂層之透磁率，·能更 有效調整線圈之電感。 根據請求項5之發明，線圈圖案之至少一部分係設在 磁性體樹脂層之内部，#由調整磁性體樹脂層之透磁：， 能更有效調整線圈之電感。 根據請求項6之發明，進一步具備設在與多層基板相 201206062 反側之磁性體樹脂層 «之主面之金屬膜層；金屬膜層係以俯 視時與線圈圖幸$ 5 a ^ ^一。卩分重疊之方式設置，因此藉由 將金屬膜層接地，可如座丨…& 了抑制從線圈產生之輻射或放射。 根據請求項7 > 1 „ 之發明’本發明之電子零件，進一步具 備形成白振器之3皆振器圖案，藉由調整磁性體樹脂層之透 磁率即使不變更譜振器圖案亦可容易調整譜振器之諧振 頻率，因此非常實用。χ，藉由調整磁性體樹脂層之透磁 率’即使縮小諧振器圖案亦可獲得所欲諧振頻率，因此可 謀求電子零件之小型化。 根據4求項8之發明’作為賴器圖案，形成具有第】 線圈之第1諧振器之第1諧振器圖案、與形成具有第2線 圈之第2谐振器之第2諧振器圖案，在俯視時係並排設置， 藉此形成第1_之第i線圈圖案與形成第2線圈之第2 線圈圖案電磁耗合’可形成各種遽波器電@。此時，藉由 在形成第1線圈之帛1線圈圖案與形成第2線圈之第2線 圈圖案之間δ又置磁性體樹脂層，在第丨線圈及第2線圈產 生之磁通集中在磁性體樹脂層，因此妨礙在彼此線圈產生 之磁通之電磁耦合，弱化第丨線圈與第2線圈之間之電磁 耦《，使耦合係數變小，因此僅設置磁性體樹脂層即可輕 易調整第1線圈與第2線圈間之電磁耦合之耦合係數。 根據請求項9之發明，配置在形成第丨線圈之第丨線 圈圖案與形成第2線圈之第2線圈圖案之間之腔體係設在 多層基板，在腔體填充有磁性體樹脂’因此藉由在第〖線 圈及第2線圈產生之磁通集中在填充於腔體之磁性體樹 201206062 脂，該磁性體樹脂作用為電磁屏蔽，能使第i 2 線圈間之電磁耦合之耦合係數進一步變小。 根據請求項H)之發明，進—步具備遮罩層，係設在設 有磁性體樹脂層之多層基板之主面；遮罩層係以圍繞磁性 體樹月曰層之方式设置，s此在藉由磁性體樹脂糊或磁性體 樹脂模型在多層基板之主面設置磁性體樹脂料，在遮罩 層之内側填充糊或模型，可在多層基板之主面之所欲部分 (位置）形成磁性體樹脂層。 根據請求項11之發明，磁性體樹脂層係藉由透磁率不 同之複數層形成’因此此進一步高效率調整磁性體樹脂層 之透磁率，，使最表層之透磁率變大、或以使磁性損 耗變大之方式形成磁性體樹脂層，則可抑制來自線圈之輻 射或放射。又，即使在磁性體樹脂層為一層之情形亦可達 到此效果’將賦予之磁性體樹脂層選擇透磁率較大者、或 磁性損耗較大者，可有效抑制來自線圈之輻射或放射。 【實施方式】 (第1實施形態） 參照圖1〜圖5說明本發明之電子零件之第丨實施形態 之多層晶片型諧振器元件1。 圖1係顯示第1實施形態之多層晶片型諧振器元件i 的圖，（a)係剖面圖，（b)〜⑴係構成多層晶片型諧振器元件 之各層3，20〜23的俯視圖，（g·)係配線層24的仰視圖。 圖u2係顯示設在圖1所示之多層晶片型諧振器元件丨之諧 振器電路4之等效電路的圖。圖3〜圖5係分別顯示圖 201206062 示之多層晶片型諧振器元件1之頻率特性之一例的圖。 (構成） 如圖1(a)所示，多層晶片型諧振器元件丨具備將積層後 陶瓷坯片燒成而形成之多層基板2、及設在多層基板2之一 主面之磁性體樹脂層3,如圖2所示，在元件丨之内部設有 由Ag或Cu等導體圖案形成之諧振器電路4(相當於本發明 之「諧振器圖案」）。又，多層晶片型諧振器元件i，係形 成為在形成為寬度X長度X高度約8mmx6mmx〇5mm之形狀 之多層基板2上部積層形成為寬度χ長度χ高度約8mmx6mm x〇_ 1mm之形狀之磁性體樹脂層3之所謂晶片型電子零件。 多層基板2係藉由將線圈層20、第1電容·器層21、第 2電容器層22、第3電容器層23、配線層24積層並燒成而 體形成為電介質陶瓷層。形成各層2〇〜24之陶瓷坯片係 藉由成膜裝置使氧化鋁或玻璃等之混合粉末與有機結合劑 及溶劑等一起混合後之漿料片化者，構成為可在較約丨000 °C低之溫度燒成、亦即低溫燒成。此外，在裁切成既定形 狀之陶究达片進行導通形成、Ag < Cu等導體糊之各種圖 案印刷而形成各層2〇〜24。 ,如圖1(C)所示，在線圈層20設有形成線圈L1之螺旋 开v狀之線圈圖案2〇a。此外，在線圈圖案2〇a之一端設有藉 由導電性糊之填充形成之層間連接導體（導通導體）2〇b，以 與接地電極G連接。又，在線圈圖案20a之另一端設有導 通構&之層間連接導體2〇c，以與形成電容器C3之電極圖 案21a連接。 201206062 如圖1(d)所示，在第i電容器層21設有形成電容器c3 之一電極之電極圖案2 1 a，在既定部位設有導通構造之層間 連接導體21b。又，如同圖⑷所示，在第2電容器層22設 有形成電容器C3之另一電極及電容器C1，C2之一電極之 電極圖案22a，在既定部位設有導通構造之層間連接導體 22b。 如圖1 (f)所示，在第3電容器層23設有形成電容器C1 之另一電極之電極圆案23a及形成電容器C2之另一電極之 電極圖案23b ’在既定部位設有導通構造之層間連接導體 23c °又’在第3電容器層23設有用以連接電極圖案23a 與輸入電極P1之層間連接導體23d與用以連接電極圖案 23b與輸出電極P2之層間連接導體23e。 如圖1(g)所示，在配線層24設有輸入電極p卜輸出電 極P2、接地電極g。此外，線圈層20之線圈圖案20a之一 端與接地電極G係透過層間連接導體20b，21b, 22b，23c連 接°又’線圈層20之線圈圆案20a之另一端與第1電容器 層2 1之電極圖案2 i a係透過層間連接導體2〇c連接。又， 第3電容器層23之電極圖案23a與輸入電極pi係透過層 間連接導體23d連接’第3電容器層23之電極圖案23b與 輸出電極P2係透過層間連接導體23e連接，形成諧振器電 路4。 如圖1 (b)所示，磁性體樹脂層3係藉由例如熱硬化性 樹脂形成’藉由在樹脂混入各種磁性體材料，磁性體樹脂 層3形成為具有所欲透磁率β Γ ^此外，作為熱硬化性樹脂， 12 201206062 有環氧樹脂、酚醛樹脂、氰酸酯樹脂等。 ^此外，以下說明中，透磁率以Γ表示相對透磁率，介電 係數ε r表示相對介電係數。 接著，針對圖1之多層晶片型諧振器元件丨之製造方 法之一例說明其概略。本實施形態之多層晶片型㈣器元 :1係藉由下述方法製造，亦即首先藉由低溫燒成形成多 =板2’在形成後之多層基板2之一主面設置磁性體樹脂 層3 〇 首先，準備用以形成構成多層基板2之各層2〇〜24之 五片堪片，在形成為既定 孔，在内部填充導體糊以… 以雷射等形成導通 體），藉由ΐ 連接用之導通孔（導通導 g或Cu等之導體糊印刷既定圖 链片設有複數個電極圖案， 成匕外’在各 板2。 ^ -人形成大量之多層基 接著，積層各層2〇〜24形成 用以分割成各多層基板2之槽係以包圍各在燒成後 域之方式形成。接著，^層基板2之區 形成多層基板2之集合體。 力壓一邊低溫燒成以 接著’在分割成各多層基板2 集=體積層樹脂片，藉由使其加化將^層基板2之 設在各多層基板2。接著，藉由分磁性體樹脂層3 晶片型諧振器元件丨。 。成各電子零件完成多層 (特性） 矣者針對多層晶片型諧振器元 之頻率特性進行 13 201206062 說明。此外，諧振器之諧振頻率f能以 f= 1/2 π (L · C)l/2 L :電感 C :電容 表示，因此隨著電感L或電容c之增加，諧振頻率f變小 又’電感L之大小—般而言與透磁率p之大小成卫 比。是以’若線圈周邊之構件读 干之透磁率以r變大，則電咸 變大，藉此諧振頻率f變低。 ’ (磁性體樹脂層3之有無之頻率特性） 圖3係顯不多層晶只划古由g ， y π曰曰方5咕振窃几件丨之頻率特性與 設置磁性體樹脂層3之狀態之多層基板2之譜振器電路 之頻率特性的圖。同圖中之上側曲線係顯示輸人至輸 極Ρ1之訊號與在諧振器電路4内部反射並再次返回輸入電 極Ρ1之反射訊號之電力比即反射特性(以下，稱為「反射特 )又同圖中之下側曲線係顯示輸入至輸入電極Ρ 之訊號與從輸出電極Ρ2輸出之訊號之電力比即通生 (以下，稱為「通過特性」）。 、性 又，圖3中，虛線曲線係顯示未設置磁性體樹脂層3 之狀態之多層基板2之諧振器電& 4之頻率特性，實線曲 線係顯示多層晶片型諧振器元件1之頻率特性，通過特性 之峰值係多層晶片型諧振器元件1之諧振頻率。 圖3所示之例中’多層基板2，介電係數ε r係形成為 成為6，磁性體樹脂層3之透磁率〆r係構成為成為2。此 外’以下說明之例中’多層基板2之透磁率係構成為成 14 201206062 為1 〇 …：圖3所示’設有磁性體樹脂層3之多層晶片型諧振 益兀件1之諧振頻率f移動至低頻側。 (磁性體樹脂層3之透磁率μ變化之頻率特性） :4係顯示使磁性體樹脂層3之透磁率^變化時之多 日曰片型諧振器元件丨之頻率特性，側 Λ* ,, 工1則曲線係顯不反射 顯二二側曲線係顯示通過特性。同圏中最右側之曲線係 t :體樹脂層3之透磁率"r構成為成為1時之例，以 構成二：朝向低頻側之順序磁性體樹月旨層3之透磁率"r 構成為成為2、4、8、16時之例。 =4所示，隨著磁性體樹脂層3之透磁率^變大， 夕層日日片型諧振器元件丨之諧振 派料£移動至低頻側。 (磁性體樹脂層3之厚度變化之頻率特性） 圖5係顯示使磁性體樹脂 片型嘈捩哭-从， 义厚度變化時之多層晶 下侧曲螝仫翻-、3 線係顯示反射特性， 下側曲線係顯不通過特性。同圖中最 設置磁性體樹脂層3時之例，，_ 線係』不未 順序磁性接I· Bt ， ""員示依朝向低頻側之 域序磁㈣W脂層3之厚度構成為 0.2画、〇.4刪、1Gmm 時之例。”、.Q5軸、〇.1 誦、 如圖5所示’隨著磁性體樹脂層 圈U產生之磁場之中1漏至磁性 厚’在線 少，因此多層晶片型諧振器元 ^月日層3外部之量變 側。如上述，藉由％ # # 之谐振頻率f移動至低頻 4藉由肩整磁性體樹脂層 整多層晶片型諧振器元株 之厚度，能輕易調 1干1之頻率特性。 15 201206062 (線圈圖案之形狀之變形例） 圖6係顯示線圈圖案之形狀之變形例的圖，（a)係顯示 蜿蜒形狀之線圈圖案2〇d，（b)係顯示線形狀之線圈圖案 20e ’（c)係顯示螺旋形狀之線圈圖案2〇f。上述之例中，雖 在線圈層20冬一面形成有螺旋形狀之線圈圖案2〇a，但以 圖6(a)所示之蜿蜒形狀形成線圈圖案2〇d亦可，以同圖（b) 所不之線形狀形成線圈圖案2〇e亦可，以同圖（c)所示之螺 旋形狀形成線圈圖案亦可。 (線圈圖案之構造之變形例） 圓7係顯示線圈圖案20d之構造之變形例的圖，（a)係 夕層曰曰片型s皆振器元件j的剖面圖，（b)係線圈層的俯視 圖。如圖7⑷所示，#由使線圈圖案_在線㈣2〇之一 面形成為凸狀’在線圈圖案2〇a間填充磁性體樹脂層3亦可。 夕=8係顯示線圈圖案20d之構造之變形例的圖，（勾係 夕層S曰片型谐振器元件i的剖面圖’（b)係線圈層Μ的俯視 圖8(a)所不，藉由使線圈圖案2〇d形成為埋設在線圈 層20之面，在線圈圖案20a間填充作為電介質之陶竞層 亦可。 (設有遮罩層5之例） ^圖9係顯示設有遮罩層5之例的圖，⑷係多層晶片型 :振…中1的剖面圖，⑻係⑷的俯視圖，⑷係顯示遮罩 層之變形例的圖。 士圖9(a)、（b)所示，在設有磁性體樹脂層3之多層基 板2之主面以圍繞磁性體樹脂層3之方式設置遮罩層5亦 16 201206062 可。遮罩層5只要以與構成多層基板2之陶瓷相同材質形 成即可亦即，在形成多層基板2時，作為遮罩層5可進 步積層已加工之坯片並燒成來設置遮罩層5。 根據上述構成，由於在多層基板2之主面以圍繞磁性 體樹脂層3之方式設置遮罩層5,因此在藉由具有流動性之 磁性體樹脂糊或磁性體樹脂模型在多層基板2之主面設置 磁性體樹脂層3時，藉由在遮罩層5之内側填充糊或模型， 可在多層基板2之主面之既定部位形成磁性體樹脂層3，且 防止產生液體從主面端緣部滴下。 此外遮罩層5之形狀只要以在俯視時圍繞線圈圊案 2〇d之方式設置則為任何形狀皆可，例如，將遮罩層構成為 如圖9(c)所示之遮罩層5a亦可。 (在多層基板2之内部設有線圈圖案2〇d之例） 圖10係顯示設有線圈圖案20d之層不同之例的圖，（a) 係多層晶片型諧振器元件！的剖面圖，⑻係顯示在多層基 板2之内。p 0又有線圈圖案2〇d時之多層晶片型諧振器元件】 之頻率特性，上側曲線係顯示反射特性，下側曲線係顯示 通過特性。如圖1 〇⑷所示，在此例，線圈圖案綱係設在 多層基板2及磁性體樹脂層3之界面附近且在多層基板2 之内部。 根據此構成’如圖t 〇(b)所示，多層晶片型諸振器元件 1之咍振頻率f移動至低頻側。此外，同圖中最右側之曲線 係顯示未設置磁性體樹脂層3時之例，以下，顯示依朝向 低頻側之順序線圈圖案2Gd設在離界面G.G25mm之深度之 17 201206062 Ή線圈圓案20d s史在離界面〇 〇 1 25mm之深度之例、線圈 圖案20d設在界面之例。 又，在圖1 0所示之構成，由於線圈圖案2〇d係形成在 夕層基板2之内部，因此線圈圆案20d之耐環境性（耐久性） 提昇且可藉由配置在線圈圖案2〇d附近之磁性體樹脂層3 微調整t皆振頻率。 (在磁性體樹脂層3之内部設有線圈圖案2〇d之例） ,圖1 1係顯示設有線圈圖案20d之層不同之例的圖，（a) 係多t層晶片型諧振器元件1的剖面圖，(b)係顯示在磁性體 層3之内。p设有線圈圖案2〇d時之多層晶片型諧振器 " 之頻率特性，上側曲線係顯示反射特性，下側曲線 頁7F通過特性。如圖i】⑷所示，在此例’線圈圖案㈣ 係叹在多層基板2及磁性體樹脂I 3之界面附近且在磁性 體樹脂層3之内部。 根據此構成，如圖n(b)所示，多層晶片型諧振器元 ^振頻率f更大幅移動至低頻側。此外，同圖中最右 之曲線係顯示未設置磁性體樹脂I 3時之例，以下，顯 依朝向低頻側之順序線圈圖帛2〇d設在界面之例、線圈 案2〇d設在離界面〇 〇125mm之高度之例。 ;疋以’根據本實施形態，藉由將積層後陶曼述片燒成 屯成多層基板2作為電介質陶t*層，在形成後之多層基板2 主面設置磁性體樹脂層3’形成在多層基板2之主面設 有磁性體樹脂層3 $ f工Φ m t 之電子零件’因此無須如以往般將電介 質陶究層與磁性微_ $ &丄 a體陶是層加以積層並一體同時燒成，因此 18 201206062 在多層基板2與磁性體樹脂層3之邊界，完全無產生起因 於燒成時之熱之彎曲或扭曲、變形、裂痕、空間等之虞， 可抑制製程中不良品之產生。 又’藉由將具有所欲介電係數之陶瓷坯片加以積層並 燒成而形成多層基板2,可容易調整多層基板2之介電係 數，又，藉由混合各種磁性體材料與樹脂材料，可容易調 整磁性體樹脂層3之透磁率yr，因此可容易調整透磁率〆^ 及介電係數ε r。 又，藉由調整磁性體樹脂層3之透磁率以r，即使不變 更線圈圖案20a，20d，20e，20f亦可容易調整線圈之電感[， 因此非㊉實用。又，藉由調整磁性體樹脂層3之透磁率以r， 即使縮小線圈圖案20a，2〇d，2〇e亦可獲得較大電感l，因此 可謀求以多層晶片型諧振器元件1為代表之電子零件之小 型化。 t又，藉由將線圈圖案2〇a，20d，20e，20f設在磁性體樹 脂層3之内部，調整磁性體樹脂層3之透磁率可更有 效調整線圏之電感L。 比又，藉由調整磁性體樹脂層3之透磁率即使不變 ^振Ilf路4之f路圖案亦可容易調整諸振器電路4之 振頻率f，因此非常實用。又，藉由調整磁性體樹脂層3 之=礞率M r，即使縮小形成諧振器電路4之電路圖案亦可 獲得所欲譜振頻率f，因此可謀求以多層晶片㈣振器元件 1為代表之電子零件之小型化。 在乂往，需要具有較大電感L之線圈時，形成具 201206062 有所欲電感 产 、圏’因此必須將線圈圖案形成為必要長Further, the electronic love resonator pattern of the present invention may also be provided with a "mr oscillator pattern for forming a spectral oscillator, to form a first vibrational benefit having a first coil; The second vibrator of the Is is the second vibrator, and the second vibrator having the second coil is formed in parallel, and the magnetic tree 6 201206062 is formed at least in a plan view. In the first, the first coil pattern of the 6-coil/one coil and the second coil pattern forming the second coil may be (request 8). Further, a cavity system disposed between the first coil pattern and the second coil pattern is provided in the multilayer core, and μ & + ‘the cavity is filled with a magnetic resin (Requirement 9). Further, there is further provided a mask layer which is provided on a main surface of the multilayer substrate provided with the magnetic resin layer; and a thin article in the layer, and a mask layer to surround the magnetic resin layer The mode setting can also be (request item 1). Further, the magnetic resin layer may be formed by a plurality of layers having different magnetic permeability (Resolution 11). According to the invention of claim 1, the magnetic resin layer is provided on at least the main surface of the multilayer substrate formed by firing the laminated ceramic tiles. That is, as the dielectric ceramic layer, II is formed by firing to form a multilayer substrate, and at least the main surface of the formed multilayer substrate is provided with a magnetic resin layer, so that it is not necessary to apply the dielectric ceramic layer and the magnetic ceramic layer as in the prior art. The laminate is laminated and integrated at the same time, so that the side I of the multilayer S plate and the magnetic resin layer is completely unproductive: due to the bending or distortion of heat, distortion, cracks, space, etc. during firing, the process can be suppressed. The production of good products. Further, in the case where the sheet containing the magnetic layer is fired, it is generally fired in an oxidizing atmosphere, but the electrode used for the internal σρ must be made of a metal such as silver which is not easily oxidized. Since the magnetic layer is provided after firing, the green sheet on which the internal pattern is formed can be fired even in a reducing atmosphere. Therefore, the internal electrode can also be a metal which is easily oxidized such as a copper electrode. Further, by forming a multilayer substrate by laminating a ceramic green sheet having a desired dielectric constant and firing 201206062, it is easy to adjust the dielectric constant of the multilayer substrate, and by mixing various magnetic materials and resin materials, Since the magnetic permeability of the magnetic resin layer is easily adjusted, the magnetic permeability and the dielectric constant can be easily adjusted. According to the invention of claim 2, the electronic component of the present invention further includes a coil pattern forming a coil, wherein the coil pattern is a coil pattern formed by a portion of the magnetic field generated from the coil through the magnetic layer. By adjusting the magnetic permeability of the magnetic resin layer, it is very practical to adjust the inductance of the wire even if the wire pattern is changed. By adjusting the magnetic permeability of the magnetic resin layer, even if the coil pattern is reduced, a large inductance can be obtained. Therefore, it is possible to reduce the size of electronic components. According to the invention of claim 3, the turns pattern is formed in a spiral shape in the lamination direction of the multilayer substrate, so that the inductance of the coil becomes larger in proportion to the square of the number of turns of the coil in the lamination direction, and ❻ is generated by energizing the coil pattern. The magnetic flux is concentrated in the direction along the central axis of the coil, so that the magnetic flux density concentrated on the magnetic flux generated along the central axis of the coil can be made high by providing the magnetic resin layer on at least the main surface of the multilayer substrate. Since the efficiency is increased, it is possible to further adjust the inductance of the coil to make it larger. According to the invention of claim 4, the coil pattern is disposed so as to be in contact with the magnetic resin layer. By adjusting the magnetic permeability of the magnetic resin layer, the inductance of the coil can be more effectively adjusted. According to the invention of claim 5, at least a part of the coil pattern is provided inside the magnetic resin layer, and by adjusting the magnetic permeability of the magnetic resin layer, the inductance of the coil can be more effectively adjusted. According to the invention of claim 6, the metal film layer of the main surface of the magnetic resin layer « which is disposed on the opposite side of the multi-layer substrate 201206062 is provided; the metal film layer is in the form of a top view and a coil pattern of $5 a ^ ^. The enthalpy is set in an overlapping manner, so by grounding the metal film layer, it is possible to suppress the radiation or radiation generated from the coil. According to the invention of claim 7 < 1 „, the electronic component of the present invention further includes a three-shaker pattern for forming a white vibrator, and the magnetic permeability of the magnetic resin layer can be adjusted by easily adjusting the spectral pattern without changing the spectrometer pattern. Since the resonance frequency of the vibrator is very practical, 调整, by adjusting the magnetic permeability of the magnetic resin layer, even if the resonator pattern is reduced, the desired resonance frequency can be obtained, so that the electronic component can be miniaturized. In the invention, a first resonator pattern having a first resonator having a first coil and a second resonator pattern forming a second resonator having a second coil are formed as a spacer pattern, and are arranged side by side in a plan view. Thereby, the first i-th coil pattern is formed and the second coil pattern forming the second coil is electromagnetically accommodated to form various chopper electric@. In this case, the coil pattern of the first coil is formed by the first coil. The magnetic resin layer is interposed between the second coil patterns forming the second coil, and the magnetic flux generated in the second coil and the second coil is concentrated on the magnetic resin layer, thereby preventing the magnetic flux generated in the coils from each other. Coupling, weakening the electromagnetic coupling between the second coil and the second coil, so that the coupling coefficient is reduced, so the coupling coefficient of the electromagnetic coupling between the first coil and the second coil can be easily adjusted by providing only the magnetic resin layer. According to the invention of claim 9, the cavity system disposed between the second coil pattern forming the second coil and the second coil pattern forming the second coil is provided on the multilayer substrate, and the cavity is filled with the magnetic resin. The magnetic flux generated by the coil and the second coil is concentrated on the magnetic body tree 201206062 grease filled in the cavity, and the magnetic resin acts as an electromagnetic shield to further reduce the coupling coefficient of electromagnetic coupling between the i-th coils. According to the invention of claim H), the mask layer is further provided on the main surface of the multi-layer substrate provided with the magnetic resin layer; the mask layer is disposed around the magnetic layer of the magnetic tree, s A magnetic resin material is provided on the main surface of the multilayer substrate by a magnetic resin paste or a magnetic resin mold, and a paste or a mold is filled inside the mask layer to obtain a desired portion (position) of the main surface of the multilayer substrate. According to the invention of claim 11, the magnetic resin layer is formed by a plurality of layers having different magnetic permeability. Therefore, the magnetic permeability of the magnetic resin layer is further adjusted with high efficiency, and the magnetic permeability of the outermost layer is changed. When the magnetic resin layer is formed so as to increase the magnetic loss, the radiation or radiation from the coil can be suppressed. Further, even if the magnetic resin layer is one layer, the effect can be achieved. When the resin layer is selected to have a large magnetic permeability or a large magnetic loss, radiation or radiation from the coil can be effectively suppressed. [Embodiment] (First Embodiment) An electronic component according to the present invention will be described with reference to Figs. 1 to 5 . Fig. 1 is a view showing a multilayer wafer type resonator element i according to the first embodiment, (a) is a cross-sectional view, and (b) to (1) are multi-layer wafer type resonators. A plan view of each of the layers 3, 20 to 23 of the element, and a bottom view of the (g.) wiring layer 24. Figure u2 is a view showing an equivalent circuit of the resonator circuit 4 provided in the multilayer wafer type resonator element shown in Figure 1. Figs. 3 to 5 are views each showing an example of the frequency characteristics of the multilayer wafer type resonator element 1 shown in Fig. 201206062. (Structure) As shown in Fig. 1 (a), the multilayer wafer resonator element 丨 includes a multilayer substrate 2 obtained by firing a laminated ceramic green sheet, and a magnetic resin layer provided on one main surface of the multilayer substrate 2 3. As shown in FIG. 2, a resonator circuit 4 (corresponding to the "resonator pattern" of the present invention) formed of a conductor pattern such as Ag or Cu is provided inside the device 丨. Further, the multilayer wafer type resonator element i is formed into a magnetic layer having a shape of a width χ length χ height of about 8 mm x 6 mm x 〇 1 mm formed on the upper portion of the multilayer substrate 2 having a shape of a width X length X height of about 8 mm x 6 mm x 〇 5 mm. A so-called wafer type electronic component of the bulk resin layer 3. The multilayer substrate 2 is formed into a dielectric ceramic layer by laminating and firing the coil layer 20, the first capacitor layer 21, the second capacitor layer 22, the third capacitor layer 23, and the wiring layer 24. The ceramic green sheets forming the respective layers 2 to 24 are formed by mixing a mixed powder of alumina or glass with an organic binder, a solvent, or the like by a film forming apparatus, and are configured to be more than about 10,000. °C low temperature firing, that is, low temperature firing. Further, each of the layers 2〇 to 24 is formed by printing a pattern of a conductive paste formed by cutting into a predetermined shape and forming a conductor paste such as Ag < Cu. As shown in Fig. 1(C), the coil layer 20 is provided with a coil pattern 2〇a which is formed in a spiral shape of the coil L1. Further, at one end of the coil pattern 2A, an interlayer connection conductor (conducting conductor) 2b formed by filling of a conductive paste is provided to be connected to the ground electrode G. Further, at the other end of the coil pattern 20a, an interlayer connection conductor 2?c of a conductive structure is provided to be connected to the electrode pattern 21a forming the capacitor C3. As shown in Fig. 1(d), the i-th capacitor layer 21 is provided with an electrode pattern 2 1 a for forming one of the electrodes of the capacitor c3, and an interlayer connection conductor 21b having a conductive structure is provided at a predetermined portion. Further, as shown in Fig. 4, the second capacitor layer 22 is provided with an electrode pattern 22a which forms the other electrode of the capacitor C3 and one of the capacitors C1 and C2, and has an interlayer connection conductor 22b having a conduction structure at a predetermined portion. As shown in FIG. 1(f), the third capacitor layer 23 is provided with an electrode circle 23a for forming the other electrode of the capacitor C1 and an electrode pattern 23b' for forming the other electrode of the capacitor C2. The interlayer connection conductor 23c is further provided with an interlayer connection conductor 23d for connecting the electrode pattern 23a and the input electrode P1 and an interlayer connection conductor 23e for connecting the electrode pattern 23b and the output electrode P2 to the third capacitor layer 23. As shown in Fig. 1(g), the wiring layer 24 is provided with an input electrode p, an output electrode P2, and a ground electrode g. Further, one end of the coil pattern 20a of the coil layer 20 and the ground electrode G are transmitted through the interlayer connection conductors 20b, 21b, 22b, 23c, and the other end of the coil case 20a of the coil layer 20 and the first capacitor layer 2 1 The electrode patterns 2 ia are connected through the interlayer connection conductors 2〇c. Further, the electrode pattern 23a of the third capacitor layer 23 is connected to the input electrode pi through the interlayer connection conductor 23d. The electrode pattern 23b of the third capacitor layer 23 and the output electrode P2 are connected to the interlayer connection conductor 23e to form the resonator circuit 4. As shown in Fig. 1 (b), the magnetic resin layer 3 is formed of, for example, a thermosetting resin. By mixing various magnetic materials in the resin, the magnetic resin layer 3 is formed to have a desired magnetic permeability β Γ ^ As a thermosetting resin, 12 201206062 is an epoxy resin, a phenol resin, a cyanate resin, or the like. Further, in the following description, the magnetic permeability indicates the relative magnetic permeability, and the dielectric coefficient ε r indicates the relative dielectric constant. Next, an outline of an example of a method of manufacturing the multilayer wafer type resonator element 图 of Fig. 1 will be described. The multilayer wafer type (four) device of the present embodiment: 1 is manufactured by the method of first forming a magnetic resin layer on one main surface of the multilayer substrate 2 after formation by forming a plurality of plates 2' at a low temperature. 3 〇 First, five sheets of the respective layers 2〇 to 24 constituting the multilayer substrate 2 are prepared, and formed into a predetermined hole, filled with a conductor paste inside to form a conductive body by laser or the like, and connected by ΐ The conductive vias are used to guide the conductive paste of g or Cu, etc., and the predetermined pattern of the chain is provided with a plurality of electrode patterns, and the outer layer is formed on each of the plates 2. ^ - a large number of layers are formed by the human body, and then the layers are stacked 2 〇 24 is formed to divide into a groove system of each of the multilayer substrates 2 so as to surround each of the post-baking regions. Then, the region of the substrate 2 is formed into an assembly of the multilayer substrate 2. The force is pressed at a low temperature to be followed by ' The multilayered substrate 2 is divided into a plurality of layers of the resin sheet, and the layered substrate 2 is placed on each of the multilayer substrates 2. Then, the magnetic resin layer 3 is divided into wafer type resonator elements. Complete multiple layers (characteristics) for each electronic part The frequency characteristics of the multilayer wafer type resonator element are described in 2012060060. In addition, the resonant frequency f of the resonator can be expressed as f = 1/2 π (L · C)l / 2 L : inductance C : capacitance, so When the inductance L or the capacitance c increases, the resonance frequency f becomes smaller and the size of the inductance L is generally proportional to the magnitude of the permeability p. It is obtained by the fact that the magnetic permeability of the member around the coil is increased by r. Then, the electric salt becomes large, and the resonance frequency f becomes low. ' (The frequency characteristic of the presence or absence of the magnetic resin layer 3) Fig. 3 shows that the multi-layer crystal is only scratched by g, y π 曰曰 square 5 咕A graph showing the frequency characteristics of a plurality of cymbals and the frequency characteristics of the spectrometer circuit of the multilayer substrate 2 in the state in which the magnetic resin layer 3 is provided. The upper side curve in the same figure shows the signal input to the input electrode 与1 and the resonator. The power ratio of the reflected signal that is internally reflected by the circuit 4 and returned to the input electrode Ρ1 again, that is, the reflection characteristic (hereinafter referred to as "reflection") and the lower side curve in the figure show the signal input to the input electrode Ρ and the slave output electrode Ρ2 The power ratio of the output signal is normal (hereinafter, referred to as "passing In addition, in FIG. 3, the broken line curve shows the frequency characteristics of the resonator electric device 4 of the multilayer substrate 2 in a state where the magnetic resin layer 3 is not provided, and the solid line curve shows the multilayer wafer type resonator. The frequency characteristic of the element 1 is the resonance frequency of the multilayer wafer type resonator element 1 by the peak of the characteristic. In the example shown in Fig. 3, the multilayer substrate 2 has a dielectric constant ε r of 6, and the magnetic resin layer 3 is formed. The magnetic permeability 〆r is configured to be 2. In the example described below, the magnetic permeability of the multilayer substrate 2 is set to 14 201206062 as 1 〇...: "Multilayer provided with the magnetic resin layer 3" as shown in FIG. The resonance frequency f of the wafer type resonance benefit element 1 is shifted to the low frequency side. (Frequency characteristics of the change in the magnetic permeability μ of the magnetic resin layer 3): 4 shows the frequency characteristics of the multi-day chip type resonator element 使 when the magnetic permeability of the magnetic resin layer 3 is changed, side Λ* , In the case of the work, the curve shows the non-reflective and the two-sided curve shows the passing characteristics. The curve on the far right side of the same t: the magnetic permeability of the bulk resin layer 3 is exemplified as the case of 1 time, and the second structure is the magnetic permeability of the magnetic layer of the layer 3 toward the low frequency side. The configuration is such that it is 2, 4, 8, or 16. As shown in Fig. 4, as the magnetic permeability of the magnetic resin layer 3 becomes larger, the resonance of the solar layer resonator element 丨 is moved to the low frequency side. (Frequency characteristics of the thickness variation of the magnetic resin layer 3) Fig. 5 shows that the magnetic resin sheet type is crying--the thickness of the multilayer crystal is changed when the thickness is changed, and the three-line system exhibits reflection characteristics. The lower curve shows the characteristics of the pass. In the case where the magnetic resin layer 3 is most provided in the same figure, the _ line system is not sequentially magnetically connected to I·Bt, and the thickness of the W-thick layer 3 is formed by the direction of the magnetic field (4) toward the low-frequency side. 0.2 painting, 〇.4 deletion, 1Gmm example. ", .55 axis, 〇.1 诵, as shown in Fig. 5 'With the magnetic field generated by the magnetic resin layer ring U, 1 leak to magnetic thickness' is less on the line, so the multilayer wafer type resonator element 3 The external quantity is changed to the side. As described above, the resonance frequency f of %## is moved to the low frequency. 4 By adjusting the thickness of the multilayer wafer type resonator element by the shoulder magnetic resin layer, the frequency characteristic of the dry 1 can be easily adjusted. 15 201206062 (Modification of the shape of the coil pattern) Fig. 6 is a view showing a modification of the shape of the coil pattern, wherein (a) shows a coil pattern 2〇d of a serpentine shape, and (b) shows a coil of a line shape. The pattern 20e '(c) is a spiral pattern 2〇f in a spiral shape. In the above example, a coil pattern 2〇a having a spiral shape is formed on the winter side of the coil layer 20, but as shown in Fig. 6(a) The coil pattern 2〇d may be formed in the shape of the crucible, and the coil pattern 2〇e may be formed in a line shape not shown in the figure (b), and the coil pattern may be formed in the spiral shape as shown in the diagram (c). Modification of the structure of the coil pattern) The circle 7 shows a modification of the structure of the coil pattern 20d, a) a cross-sectional view of the s-layer s-type vibrator element j, and (b) a top view of the coil layer. As shown in Fig. 7 (4), # is formed by making the coil pattern _ in-line (four) 2 为 a convex shape The magnetic resin layer 3 may be filled between the coil patterns 2A. In the case of a modified example of the structure of the coil pattern 20d, a cross-sectional view of the hook-and-sink resonator element i ( b) The coil layer layer 俯视 is not shown in plan view 8(a), and the coil pattern 2〇d is formed so as to be buried on the surface of the coil layer 20, and the ceramic layer may be filled as a dielectric between the coil patterns 20a. FIG. 9 is a view showing an example in which the mask layer 5 is provided, (4) is a cross-sectional view of a multilayer wafer type: vibration, (8) a top view of the system (4), and (4) a mask layer. As shown in Fig. 9 (a) and (b), the mask layer 5 is also provided so as to surround the magnetic resin layer 3 on the main surface of the multilayer substrate 2 on which the magnetic resin layer 3 is provided. 201206062, the mask layer 5 may be formed of the same material as the ceramic constituting the multilayer substrate 2, that is, when the multilayer substrate 2 is formed, it may be used as the mask layer 5. The mask layer 5 is provided by laminating the processed green sheet and firing it. According to the above configuration, since the mask layer 5 is provided on the main surface of the multilayer substrate 2 so as to surround the magnetic resin layer 3, When the magnetic resin layer 3 is provided on the main surface of the multilayer substrate 2, the magnetic resin layer 3 is filled with a paste or a mold on the inside of the mask layer 5, and the main surface of the multilayer substrate 2 can be set. The magnetic resin layer 3 is formed at a portion, and the liquid is prevented from dripping from the edge portion of the main surface. Further, the shape of the mask layer 5 may be any shape as long as it is disposed around the coil pattern 2〇d in plan view, for example, The mask layer may be formed as the mask layer 5a as shown in FIG. 9(c). (Example in which the coil pattern 2〇d is provided inside the multilayer substrate 2) Fig. 10 is a view showing an example in which the layers of the coil pattern 20d are different, and (a) is a multilayer wafer type resonator element! The cross-sectional view, (8), is shown within the multilayer substrate 2. p 0 has the frequency characteristic of the multilayer wafer type resonator element in the case of the coil pattern 2〇d, the upper curve shows the reflection characteristic, and the lower curve shows the pass characteristic. As shown in Fig. 1 (4), in this example, the coil pattern is provided in the vicinity of the interface between the multilayer substrate 2 and the magnetic resin layer 3 and inside the multilayer substrate 2. According to this configuration, as shown in Fig. 4(b), the resonance frequency f of the multilayer wafer type resonator element 1 is shifted to the low frequency side. In addition, the curve on the far right side in the same figure shows an example in which the magnetic resin layer 3 is not provided. Hereinafter, the coil pattern 2Gd is placed at a depth of 25 mm from the interface G.G25 mm in the order of the low frequency side. 201206062 Ή coil case An example in which the 20d s history is at a depth of 25 mm from the interface and the coil pattern 20d is set at the interface. Further, in the configuration shown in FIG. 10, since the coil pattern 2〇d is formed inside the base layer substrate 2, the environmental resistance (durability) of the coil case 20d is improved and can be arranged in the coil pattern 2 The magnetic resin layer 3 near 〇d slightly adjusts the t-vibration frequency. (Example in which the coil pattern 2〇d is provided inside the magnetic resin layer 3), FIG. 11 is a view showing an example in which the layers of the coil pattern 20d are different, and (a) is a multi-t-layer wafer type resonator element. A sectional view of 1 and (b) are shown in the magnetic layer 3. p has a frequency characteristic of the multilayer wafer type resonator when the coil pattern 2〇d, the upper curve shows the reflection characteristic, and the lower curve page 7F passes the characteristic. As shown in Fig. i (4), in this example, the coil pattern (4) is sighed in the vicinity of the interface between the multilayer substrate 2 and the magnetic resin I 3 and inside the magnetic resin layer 3. According to this configuration, as shown in Fig. 7(b), the multilayer wafer type resonator element vibration frequency f is more largely shifted to the low frequency side. In addition, the curve on the far right in the same figure shows an example in which the magnetic resin I 3 is not provided. Hereinafter, the order of the coil toward the low frequency side is shown in the example of the interface, and the coil case 2〇d is set. An example of a height of 125 mm from the interface. According to the present embodiment, the laminated ceramic layer is fired into a multilayer substrate 2 as a dielectric ceramic layer, and a magnetic resin layer 3' is formed on the main surface of the multilayer substrate 2 after formation to form a multilayer substrate. The main surface of 2 is provided with an electronic component of the magnetic resin layer 3 $ f Φ mt 'therefore, it is not necessary to laminate the dielectric ceramic layer and the magnetic micro _ $ & Therefore, at the boundary between the multilayer substrate 2 and the magnetic resin layer 3, there is no occurrence of defects such as bending, distortion, deformation, cracks, space, and the like due to heat during firing, and the occurrence of defective products in the process can be suppressed. Further, by forming a multilayer substrate 2 by laminating and firing a ceramic green sheet having a desired dielectric constant, the dielectric constant of the multilayer substrate 2 can be easily adjusted, and by mixing various magnetic materials and resin materials, Since the magnetic permeability yr of the magnetic resin layer 3 can be easily adjusted, the magnetic permeability 及^ and the dielectric constant ε r can be easily adjusted. Further, by adjusting the magnetic permeability of the magnetic resin layer 3 to r, even if the coil patterns 20a, 20d, 20e, and 20f are not changed, the inductance of the coil can be easily adjusted. Further, by adjusting the magnetic permeability of the magnetic resin layer 3 to r, even if the coil patterns 20a, 2〇d, 2〇e are reduced, a large inductance l can be obtained, so that the multilayer wafer type resonator element 1 can be represented. The miniaturization of electronic components. Further, by providing the coil patterns 2a, 20d, 20e, 20f inside the magnetic resin layer 3, adjusting the magnetic permeability of the magnetic resin layer 3 can more effectively adjust the inductance L of the coil. Further, by adjusting the magnetic permeability of the magnetic resin layer 3, the f-channel pattern of the Ilf path 4 can easily adjust the vibration frequency f of the vibrator circuit 4, which is very practical. Further, by adjusting the 礞 rate M r of the magnetic resin layer 3, even if the circuit pattern forming the resonator circuit 4 is reduced, the desired spectral frequency f can be obtained, so that the multilayer wafer (four) oscillating element 1 can be represented. The miniaturization of electronic components. In the case of a coil with a large inductance L, it is required to have a desired inductance of 201206062, so that the coil pattern must be formed as long as necessary.

度开v狀，雖線圈圖幸K 根棱上Μ Λ 〃（線圈）之尺寸變大，高度亦變高，但 據上述構成，藉由 注體樹知層3忐使線圈之電感l辦 加，因此可在雷曰 m 件之内部形成具有較大電感L之線圈， 可4求電子零件之低高度化。 (第2實施形態） 接著，參照圖丨2〜圖14說明本發明之電子零件之第2 實施形態之多層晶片型帶通濾波器元件】〇〇。 圖12係顯示第2實施形態之多層晶片型帶通濾波器元 件100的圖’（a)係剖面圖，（b)〜（10係構成多層晶片型帶通 濾波器元件1〇〇之各層103，12〇〜128的俯視圖。圖13係 顯示設在圖12所示之多層晶片型帶通濾波器元件1〇〇之帶 通濾波器電路104之等效電路的圖。圖14係顯示圊12所 示之多層晶片型帶通滤波器元件1 〇〇之頻率特性之一例的 圖。 此第2實施形態與上述第1實施形態不同之點在於， 如圖12、13所示，設在多層晶片型帶通濾波器（BPF)元件 100之内部之電路構成不同。由於其他構成與上述第1實施 形態相同，因此賦予相當符號以省略該構成之說明。 (構成） 如圆12(a)所示，多層晶片型BPF元件100具備將積層 後陶瓷坯片燒成而形成之多層基板1 02、及設在多層基板 102之一主面之磁性體樹脂層103，如圖13所示，在内部 設有由Ag或Cu等導體圖案形成之帶通濾波器電路104。 20 201206062 又’多層晶片型BPF元件100 ’係形成為寬度χ長度χ高度約. 1 .OmmxO.5mmxO.3mm之形狀之所謂晶片型電子零件。 多層基板102係藉由將第1線圈層120、連接層！ 21、 第2線圈層122、絕緣體（電介質）層123、第1電容器層124、 第2電谷器層125、第3電容器層126、配線層127、電介 質層128積層並燒成而一體形成。又，各層12〇〜128係藉 由與在上述第1實施形態說明之陶瓷坯片相同之陶究述片 形成’本實施形態中’多層基板1 〇2之介電係數ε r係構成 為成為60。. 如圖12(c)所示’在第1線圈層120設有形成線圈[11 之左右一對之線圈圖案120a »此外，線圈圖案120a分別之 另一端係透過形成在第2線圈層12 2之左右一對之線圈圖 案122a分別之一端122b與左右對稱設在連接層ι21之導通 構造之層間連接導體12 1 a，121 b連接。左側之線圈圖案1 20a 之一端120b係連接於外部電極即輸入電極p丨丨，右側之線 圈圖案120a之一端120c係連接於外部電極即輸出電極 P12 〇 如圖12(d)所示，在連接層121設有用以連接第1線圈 層120之二個線圈圖案12〇a分別之另一端與第2線圈層122 之二個線圈圖案122a之一端122b之導通構造之層間連接導 體121a，121b。又’如圖12(e)所示，在第2線圈層122左 右對稱設有形成線圈L1 2之線形狀之線圈圖案122a。此外， 線圈圖案122a之一端122b係透過形成在第1線圈層120 之左右之線圈圖案12〇a分別之另一端與層間連接導體121 a， 21 201206062 121b連接’線圏圆案122a分別之另-端122c係透過配線 層127之接地電極G與外部電極連接。 圖12(f)所示，絕緣層123係設成用以調整各電極圖 案之間隔。又’如圖12(g)所示，在第i電容器層⑴設有 電極圖案124a，藉由電極圖案U4a與設在第2電容器層125 之電極圖案125a，125b形成電容器cu。 如圖12(h)所示，在第2電容器層125設有形成電容器 cn之電極圖案丨25a，125b、亦即設有形成電容器c12之一 電極之電極圖案125a與形成電容器C13之一電極之電極圖 案125b ^又，電極圖案125a係連接於外部電極即輸入電極 p 1 1，電極圖案1 2 5 b係連接於外部電極即輸出電極p 1 2。 如圆12⑴所不，在第3電容器層126設有形成電容器 C12之另一電極之電極圖案126a與形成電容器ci3之另一 電極之電極圖案126b。又，電極圖案126a，12处分別係透 過配線層127之接地電極G與外部電極連接。 如圖12(j)所示’在配線層127設有接地電極g ^此外， 接地電極G係透過外部電極連接圖12(e)所示之第2線圈層 122之線圈圖案122a分別之另一端122c與圖12(i)所示之第 3電容器層126之電極圖案126a，126b ’形成帶通渡波器電 路104。又，如圖12(k)所示，絕緣層123係設成用以調整 各電極圆案之間隔。 如圆12(b)所示’磁性體樹脂層1〇3係藉由與在上述第 1實施形態說明之磁性體樹脂相同之磁性體樹脂形成。 此外，多層晶片型BPF元件1〇〇係以與在上述第i實 22 201206062 施形態說明之激；生古、土 ^ . 我1^方法相同之方法製造。 (帶通濾波器之頻率特性） 接著’針對多層晶片型BPF元件1 〇〇之頻率特性進行 說明。圖14係顯示多層晶片型BPF元件100之頻率特性的 圖上側曲線係顯示反射特性，下側曲線係顯示通過特性。 又，同圖中之反射特性及通過特性，分別右側之二條曲線 顯不磁性體樹脂層1〇3之有無之頻率特性，左側之二條曲 線顯示磁性體樹脂層1 〇 3之厚度變化之頻率特性。 (1) 磁性體樹脂層10 3之有無之頻率特性 在圖14所示之例，磁性體樹脂層1〇3係構成為透磁率 // r成為1、厚度成為〇 lmm。又，同圖中之右側之二條曲 線之中’右側顯示未設有磁性體樹脂層1〇3時之例，左側 顯示設有磁性體樹脂層丨〇3時之例。如同圖所示，·設有磁 性體樹脂層103之多層晶片型BPF元件丨〇〇之諧振頻率f 移動至低頻側。 (2) 磁性體樹脂層1 〇3之厚度變化之頻率特性 在圖14所示之例，透磁率以Γ為2〇之磁性體樹脂層1 〇3 係設在多層基板1 02之上部。同圖中之左側之二條曲線之 中’右側顯示磁性體樹脂層1 03之厚度為〇.05mm時之例， 左側顯示磁性體樹脂層1 03之厚度為〇. i mm時之例。如同 圖所示，若使磁性體樹脂層1 03之厚度變厚，則多層晶片 型BPF元件100之諧振頻率f移動至低頻側。 如上述，本實施形態中，亦可達到與上述第丨實施形 態相同之效果。 23 201206062 (第3實施形態） 接著，參照圖15〜圊1 8說明本發明之電子零件之第3 實施形態之多層晶片型平板諧振器元件2〇〇。 圖15係顯示第3實施形態之多層晶片型平板諧振器元 件200的圖，（a)係剖面圖，（b)、（c)係構成多層晶片型平板 諧振器元件200之各層203, 220的俯視圖，（d)係配線層221 的仰視圖。圖16係顯示設在圖15所示之多層晶片型平板 諧振器元件200之諧振器電路204之等效電路的圖。圖17、 圖18係顯示圖15所示之多層晶片型平板諧振器元件2〇〇 之頻率特性之一例的圖。 此第3實施形態與上述第i及第2實施形態不同之點 在於，如圖15、16所示，設在多層晶片型平板諸振器元件 200之内部之電路構成不同。本實施形態之多層晶片型平板 諧振器元件200係構成為將相當於與欲阻止訊號之頻率對 應之波長之長度設為線路長度之分布常數型之諧振器。由 於其他構成與上述第i及第2實施形態相同，因此賦予相 當符號以省略該構成之說明。 (構成） 如圖！5(a)所示’多層晶片型平板譜振器元件2〇〇具備 將積層後陶免堪片燒成而形成之多層基板2〇2、及設在多層 基板202之一主面之磁性體樹脂層203，如圓16所示，在 内部設有由Ag或Cu科體圖案形成之諧振器電路綱。 又，多層晶片型平板諧振器元件2〇〇，係形成為在形成為寬 度X長度X高度約8mmx6mmx0.5画之形狀之多層基板2〇2 24 201206062 上P積層幵^成為寬度x長度x高度約8mmx6mmx0.1mm之形 狀之磁性體樹脂層2〇3之所謂晶片型電子零件。 夕層基板202係藉由將諧振器層220、連接層222、配 線層21積層並燒成而一體形成為電介質陶瓷層。又，各 曰 222係藉由與在上述第1實施形態說明之陶瓷坯片 相同之陶瓷坯片形成，本實施形態中，多層基;fe 202之介 電係數ε r係構成為成為6〇。 圖5(C)所不，在諧振器層220設有諧振器圖案 2 2 0 a、輸出入搞合用雷 電極220b，220c。又，在配線層221設 有輸入電極P2 1、輸出電極p22、接地電極〇。此外，在連 接層222設有層間連接導體22^咖，輸出入柄合用電極 220b及輸入電極p2 1 n泰、a a + 电个係透過層間連接導體222a連接，輸出 入柄口用電極22Ge及輸出電極p22係透過層間連接導體 222b連接，藉此形成圖16所示之電容器⑶，⑶、具有諧 振器RF之諧振器電路204。 此外電合盗C2 1係以輸出入輕合用電極2施與譜振 器圖案2術之間隔決定之電容’電容器C22係以輸出入耦 合用電極22〇e與譜振器圖案㈣之間隔決定之電容。 如圖叩）所示，磁性體樹脂層203係藉由與在上述第 1實施形態說明之磁性魏搞f 性體樹月曰相同之磁性體樹脂形成。 此外夕層曰曰片型平板諧振器元件2〇〇係以與在上述 第1實施形態說明之製造方法相同之^製造。 (磁性體樹脂層203之有無之頻率特性） 圖17係顯不多層晶片型平板諧振器元件鳩之頻率特 25 201206062 性與未設置磁性體樹脂層203之狀態之多層基 振器電路204之頻率特性的圖。同圆中之上側反202之諧 反射特性’同圖中之下側曲線係顯示通過特性。曲線係顯示 中，虛線曲線係顯示未設置磁性體樹脂層2们 圖1 7 層基板202之譜振器電路2〇4之頻率特性^狀態之多 示多層晶片型平板諳振器元件200之頻率特性。、、曲線係顯 之例中圖磁性體樹脂層2。3之透磁率係構成為圖成:所： 如圖17所不，設有磁性體樹脂層2〇3之多 -、 板諧振器元件200之諧振頻率f移動至低頻側。曰曰片型平 (磁性體樹脂層2〇3之透磁率Μ變化之頻率特性） 圖a係顯示使磁性體樹脂層2〇3之透磁率々 之多層晶片型平板諧振器元件200之頻率特 夺 反射特性，（b)係顯示诵巩蛀地 v ㈤ 承顯不 之Λ 圖18⑷、（b)中最右側 :曲二係顯不磁性體樹脂層2〇3之透磁率P構成為成為8 下，顯示依朝向低頻側之順序磁性體樹脂層203 透磁率p構成為成為16 ' 32時之例^此外，磁性體樹 月曰層203之透磁率“ r ,能以改變磁性體樹脂層中所含 之，性叙之3 1、亦即樹脂量與磁性粉末之比例來變化。 因此，即使磁性體樹脂層2〇3之厚 化亦可微調整譜振器之頻率。 β 如圖18所示，隨著磁性體樹脂層203之透磁率變 大，多層晶片型平板諧振器元件200之諧振頻率f移動至低 頻側。 (諧振器圆案之變形例） 26 201206062 圖丨9係諧振器圖案之變形例，⑷係 八 > )顯不一端接地之几/4諧振器圖案220e。又， 圖20係諧振器圖案之變 790f . B ）你顯不％狀之諧振器圖案 ()係4不圓形之諧振器圖案22 ^ iJF 5< fH Φ οολι. (C)係顯不矩形之 -白振态圖案220h。又，圖21係稭振 菇i Η - — τ白搌益圓案之變形例，顯示 —4振模式構成帶通濾波器之複合模式嘈 圖案220i。 倮式咕振态 上述之例中，在諧振器層 220c，但替代此形成圖19〜21 器圖案亦可。 220形成諧振器圖案220a〜 作為變形例顯示之各種諧振 如上述，本實施形態中，亦可達到與上述第丨實施形 態相同之效果。 (第4實施形態） 接著，參照圖22說明本發明之電子零件之第4實施形 態之多層晶片型諧振器元件la。圖22係顯示本發明之電子 零件之第4實施形態之多層晶片型諧振器元件u的圖，（幻 係剖面圖，（b)係俯視圖。 此第4實施形態與上述第丨實施形態不同之點在於， 如圖22所示’在磁性體樹脂層3之上面進—步具備金屬膜 層6。由於其他構成與上述第1實施形態相同，因此賦予相 當符號以省略該構成之說明。 如圖22(a)、（b)所示，金屬膜層6係設成在俯視時與線 圈圖案20a之至少一部分重疊。此外’金屬膜層6與接地電 極G係藉由導通構造之層間連接導體6a連接。 27 201206062 然而，從形成在電子零件内部之諸振器圖案或滤波器 電路之線圈圖案產生磁場，但產生之磁場放射至電子零件 之外。p 涉與電子零件接近配置之其他電子零件，而有 使。亥零件之特性變動之虞β χ，磁場從外部侵人至電子零 件’亦彳設在電子零件之線圈$諧振器之特性變動之虞。 因此，根據本實施形態，在磁性體樹脂層3之上面以 在俯視時與線圏圖案20a之至少一部分重叠之方式設置金 屬膜層6,因此藉由將金屬膜層6接地，可抑制從線圈產生 之輻射或放射。又，可抑制磁場從外部侵入導致之電路圖 案之特性變化。 (第5實施形態） 接著，參照圖23說明本發明之電子零件之第5實施形 態。圖23係顯示本發明之電子零件之第5實施形態的圖。 此第5實施形態與上述第1至第4實施形態不同之點 在於，如圖23所示，磁性體樹脂層3〇3係藉由透磁率以犷 不同之二層形成。由於其他構成與上述第丨至第4實施形 態相同’因此賦予相當符號以省略該構成之說明。 如圖23所示，本實施形態之電子零件3〇〇具備多層基 板302與磁性體樹脂層303。此外，磁性體樹脂層3〇3係藉 由透磁率yr不同之~*層303b，303a構成。 根據上述構成’可達到與上述第1實施形態相同之效 果，再者，使磁性體樹脂層303藉由透磁率以Γ不同之複數 層303a，303b形成’可更高效率調整磁性體樹脂層303之 透磁率Mr。例如’使層303b之透磁率yr變大，構成為磁 28 201206062 性損耗變大，可抑制來自線圈之輻射或放射。 3〇3雖藉由二層 r不同之層來構成 此外，在本實施形態’磁性體樹脂層 303a，303b構成’但進一步增加透磁率〆 磁性體樹脂層303亦可。 (第6實施形態） 接著，參照圖24〜圖26說明本發明之φ 十w 電子零件之第6 實施形態。圖24係本發明之電子裳株夕货 < 由 电于苓件之第6實施形態的主 要部分放大圖。圖25係顯示螺旋型線圈之阻數與電感之關 係之-例的圖。圖26係顯示螺旋型線圈之阻數與q值之關 係之一例的圖。 此第6實施形態與上述第丨實施 X態不同之點在於， 如圖24所示，形成線圈[41之螅圃hi安 、 之綠圈圖案420a〜422a在形 成電子零件400之多層基板402之籍禺*^ , 锻 Z之積層方向形成為螺旋 狀。由於其他構成與上述第1竇 • 坪1貰狍形態相同，因此賦予相 當符號以省略該構成之說明。 (構成） 如圖24所示，電子零件彻具備將積層後陶瓷坯片燒 成而形成之多層基板4G2,在内部設有藉由Ag或Cu等導 體圖案形成之各種濾波器電路（省略圖示）。 夕層基板402具備第i〜第3線圈層42〇〜422，第i 第3線圈層420〜422與省略圖示之連接層或絕緣體（電介 質）層、電容器^、配線層等係藉由積層燒成而—體形成。 又，形成多層基板4G2之各層係藉由與在上述帛t實施形 ㈣明之陶究&片才目同之陶究培片形成。 29 201206062 如圖24所示，在第1〜第3線圈層420〜422分別設有 形成線圈L41之大致3字狀之線圈圖案420a〜422a。此外， 第1〜第3線圈層420〜422係積層為分別設置之大致；；；字 狀之線圈圖案420a〜422a之開口方向交互朝向相反方向。 此外，設在第1線圈層之線圈圖案42〇a之一端420b 與設在第2線圈層之線圈圖案421 a之一端421 b係藉由導通 構造之層間連接導體420c連接，線圈圖案421a之另一端 42 lc與設在第3線圈層422之線圈圖案422a之另一端422b 係藉由導通構造之層間連接導體42 1 d連接，而形成螺旋型 線圈L 4 1。 此外，電子零件400係以與在上述第1實施形態說明 之製造方法相同之方法製造。又，藉由將形成有大致口字 狀之線圈圖案之複數個線圈層如上述適當積層，可容易形 成具有任意匝數之線圈L4 1。 (線圈L41之匝數與電感之關係） 接著’說明線圈L41之匝數與電感之關係。圖25係顯 不線圈L41之匝數與電感之關係之一例的圖，♦係顯示在 多層基板未設置磁性體樹脂層時之線圈L4丨之匝數與電感 之關係▲係顯示在多層基板設置透磁率"r= 2之磁性體 樹脂層時之線ϋ L41之E數與電感之關係，係顯示在多 層基板设置透磁率以r== 4之磁性體樹脂層時之線圈之 阻數與電感之關係。 如圖25所示，與線圈L41之阻數之平方成正比線圈[41 之電感增加。又，若使設在多層基板之磁性體樹脂層之透 30 201206062 磁率β Γ變大’則線圈L41之電感增加。 (線圈L41之匝數與Q值之關係） 接著’說明線圈L41之匝數與Q值之關係。圖26係顯 不線圈L4 1之匝數與q值之關係之一例的圖，♦係顯示在 多層基板未設置磁性體樹脂層時之線圈L4 1之匝數與Q值 之關係，▲係顯示在多層基板設置透磁率# 2之磁性體 樹脂層時之線圈L41之匝數與Q值之關係，係顯示在多 層基板設置透磁率# r = 4之磁性體樹脂層時之線圈[41之 匝數與Q值之關係。 如圖26所示’隨著線圈L41之匝數之增加線圈L41之 Q值亦增加。又’若使設在多層基板之磁性體樹脂層之透磁 率V r變大，則線圈L4 1之Q值增加。 如上述，根據本實施形態，可達到與上述第丨實施形 態相同之效果。又，線圈圖案420a〜 422a係在多層基板4〇2 之積層方向形成為螺旋狀，因此線圈L41之電感與對積層 方向之線圈L41之匝數之平方成正比變大’但對線圈圖案 420a〜422a通電而產生之磁通集中在沿著線圈L41中心軸 之方向。因此藉由在多層基板402之至少一主面設置磁性 體樹脂層，能使集中在沿著線圈L41中心軸之方向產生之 磁通之磁通密度高效率變大，因此能進一步高效·率調整線 圈L41之電感使其變大。又，藉由以磁性損耗較小的材質 形成磁性體樹脂層，可高效率增加線圈L4 1之q值。 又，藉由在多層基板402之一主面設置磁性體樹脂層， 在形成線圈L41之線圈圖案420a〜 422a產生之浮游電容雖 31 201206062 受到磁性體樹脂層之介電係數ε Γ之影響，但由於線圈圖案 420a〜422a係設在多層基板4〇2之積層方向，因此受到磁 性體樹脂層影響最大者為最上面側之線圈圖案42〇a或最下 面側之線圈圖案422a。 是以，即使在以線圈L41具有既定特性之方式形成之 多層基板402之一主面設置磁性體樹脂層’僅在形成線圈 L41之線圈圖案420a〜422a之一部分產生之浮游電容受到 磁性體樹脂層之介電係數ε r之影響，因此線圈L41之特性 不會受到磁性體樹脂層之介電係數£ r之較大影響，可增加 磁性體樹脂層之設計範圍，增加用以形成磁性體樹脂層之 磁性粉末或樹脂等材料之選擇幅度。 此外，本實施形態中，僅說明線圈L41之構成，但使 用螺旋型之線圈L4i，將諧振器電路或濾波器電路、平衡電 路、方向性耦合器、天線電路等各種電子電路形成在電子 零件400内即可。 (第7實施形態） 接著，參照圖27〜圖3丨說明本發明之電子零件之第 實施形態之多層晶片型帶通濾波器元件5〇〇。 圖27係顯示第7實施形態之多層晶片型帶通濟波器 件5〇0的圖，⑷係剖面圖，（b)〜⑴係構成多層晶片型^ 濾波器元件500之各層503，520〜λα沾、 _ ，527的俯視圖。圖28 > 顯示設在圖27所示之多層晶片刑趣、s .办4 /甚日曰月型帶通濾波器元件5〇〇之; 通濾波器電路504之等效電路的圖。 此第7實施形態與上述笫〗眘尬$ ^乐1貫施形態不同之點在於 32 201206062 如圖27、28所示，設在多層晶片型帶通濾波器（BPF)元件 5 00之内部之電路構成不同。 亦即’作為本發明之諧振器圖案，形成具有第1線圈 L5 1之第1諧振器電路5〇4a之第1諧振器圖案、與形成具 有第2線圈L52之第2諧振器電路504b之第2諧振器圖案， 在俯視時係並排設置在多層基板5〇2。此外，磁性體樹腊層 503係設在至少形成第1線圈L51之第1線圈圖案52〇a與 形成第2線圈L52之第2線圈圖案520b之間。由於其他構 成與上述第1實施形態相同，因此賦予相當符號以省略該 構成之說明。 (構成） 如圖27(a)所示，多層·晶片型BPF元件500具備將積層 後陶瓷坯片燒成而形成之多層基板5〇2、及設在多層基板 502之一主面之磁性體樹脂層503，如圖28所示，在内部 設有由Ag或Cu等導體圖案形成之帶通濾波器電路5〇4。 本實施形態之帶通濾波器電路504，係藉由第1諸振器 電路504a及第2諧振器電路5〇4b分別具有之第1線圈[51 之第1線圈圖案520a及第2線圈L52之第2線圈圖案52〇b 電磁耗合而形成。 多層基板502係藉由將第1線圈層52〇、第1連接層 521、第1電容器層522、第2電容器層523、第2連接層 524、第3電容器層525、配線層526、絕緣體（電介質）層 5 27積層並燒成而一體形成。又，各層5 20〜5 27係藉由與 在上述第1實施形態說明之陶瓷坯片相同之陶瓷坯片形成。 33 201206062 如圖27(c)所示’在第1線圈層520設有形成線圈L51 之大致L字狀之第1線圈圖案520a與形成線圈L52之第2 線圈圖案520b。此外’在線圈圖案520a之一端設有透過第 1連接層521、第1電容器層522及第2連接層524連接第 2電容器層523之電極圖案523a及第3電容器層525之電 極圖案525 a之導通構造之層間連接導體520c。 又’在線圈圖案520b之一端設有透過第1連接層521、 第1電容器層522及第2連接層524連接第2電容器層523 之電極圖案523b及第3.電容器層525之電極圖案525b之 導通構造之層間連接導體520d。又，線圈圖案520a及線圈 圖案520b分別之另一端係連接於外部電極即接地電極。 如圖27(d)所示，在第丨連接層521設有用以連接第i 線圈層520之第1線圈圖案520a之一端與第2電容器層523 之電極圖案523a及第3電容器層525之電極圖案525a之導 通構造之層間連接導體521a。又，在第1連接層521設有 用以連接第1線圈層520之第2線圈圖案520b之一端與第 2電容器層523之電極圖案523b及第3電容器層525之電 極圖案525b之導通構造之層間連接導體521b。 又，如圖27(e)所示，在第！電容器層522設有形成電 容器C52之另一電極之電極圖案522a，藉由電極圖案522& 與設在第2電容器層523之電極圖案523a形成電容器C52。 又，在第1電容器層522設有形成電容器C54之另一電極 之電極圖案522b，藉由電極圖案522b與設在第2電容器層 5 23之電極圖案523b形成電容器C54。又，電極圖案522a 34 201206062 及電極圖案522b分別連接於外部電極即接地電極。 又，在第1電容器層522設有用以連接第1線圈層520 之第1線圈圖案520a之一端與第2電容器層523之電極圖 案523 a及第3電容器層5 25之電極圖案525 a之導通構造之 層間連接導體522c。又，在第1電容器層522設有用以連 接第1線圈層520之第2線圈圖案520b之一端與第2電容 器層5 23之電極圖案523b及第3電容器層525之電極圊案 525b之導通構造之層間連接導體5 22d。 又，如圖27(f)所示，在第2電容器層523設有形成電 容器C52之一電極之電極圖案523a與形成電容器C54之一 電極之電極圖案523b。 如圖27(g)所示，在第2連接層524設有用以連接第1 線圈層520之第1線圈圖案520a之一端與第2電容器層523 之電極圖案523a及第3電容器層525之電極圖案525a之導 通構造之層間連接導體524a。又，在第2連接層524設有 用以連接第1線圈層520之第2線圈圖案520b之一端與第 2電容器層523之電極圖案523b及第3電容器層525之電 極圖案525b之導通構造之層間連接導體524b。 又’如圖27(h)所示，在第3電容器層525設有形成電 容器C5 1之一電極之電極圖案525a，藉由電極圖案525 a與 設在配線層526之電極圖案526a形成電容器C51。又，在 第3電容器層5 25設有形成電容器C53之一電極之電極圖 案525b ’藉由電極圖案525b與設在配線層526之電極圖案 526b形成電容器C53。 35 201206062 如圖27⑴所示，在配線層526設有形成電容器C51之 另一電極之電極圖案526a與形成電容器C53之另一電極之 電極圖案526b。又，電極圖案526a係連接於外部電極即輸 入電極P51’電極圖案526b係連接於外部電極即輸出電極 P52 ’形成帶通滤波器電路504。又，如圖27(j)所示，絕緣 體層527係設成用以調整各電極圖案之間隔。 如圖27(b)所示，磁性體樹脂層5〇3係藉由與在上述第 1實施形態說明之磁性體樹脂相同之磁性體樹脂形成，配置 在第1線圈層520之第1線圈圖案52〇a與第2線圈圖案52仳 之間。 此外，多層晶片型BPF元件500係以與在上述第i實 施形態說明之製造方法相同之方法製造。 (帶通濾波器之頻率特性） 接著，針對多層晶片型BPF元件5〇〇之頻率特性進行 說明。圖29係顯示圖27所示之多層晶片型BPF元件5〇〇 之頻率特性之一例的圖，（a)係顯示線圈L5丨與線圈L52之 間之電磁耦合之耦合係數κ=〇 4時之頻率特性，（b)係顯示 線圈L5 1與線圈L52之間之電磁耦合之耦合係數κ = 5時 之頻率特性，（C)係顯示線圈L5 1與線圈L52之間之電磁耦 。之搞合係、數K= G·6時之頻率特性。又，圖29(a)〜（c)分 別之上側曲線係顯示反射特性，下側曲線係顯示通過特性。 如圖29所示’藉由使形成多層晶片型BPF元件500之 L5 1, L52之電磁耦合之耦合係數κ變化，多層晶片型 BPF元件500之頻率特性變化。 36 201206062 (線圈圖案之變形例） 接著，說明線圈圖案之變形例之一例。圖3〇係顯示線 圈圖案之變形例之一例的圖，（a)係顯示本實施形態之線圈 圖案520a，520b，（b)係顯示形成在多層基板5〇2之積層方 向之導通構造之線圈圖案52〇e，5 20f。 本實施形態中’如圖30(a)所示，在俯視時大致L字狀 之線圈圖案520a，520b係並排設置，在線圈圖案52〇a與線 圈圖案520b之間設有磁性體樹脂層503。 另一方面’如圖30(b)所示’將設在多層基板502之積 層方向之導通構造之線圈圖案52〇e，52〇f形成為在俯視時 並排亦可。此外，在線圈圖案52〇e與線圈圖案52〇f之間設 置磁性體樹脂層503亦可。 (磁性體樹脂層之耦合係數之調整） 接著，參照圖3 1說明藉由設置磁性體樹脂層503調整 線圈L51及線圈L52之電磁耦合之搞合係數之動作。圖 係用以說明在多層基板設置磁性體樹脂層503之效果的 圖’（a)係顯示藉由線圈產生之磁通MF之狀況的圖，（b)係 顯示設有磁性體樹脂層503之狀態的圖，（c)係顯示在多層 基板設置磁性體樹脂層503導致之磁通MF之變化的圖。 如圖3 1(a)所示，藉由導通構造形成線圈圖案520e， 5 20f’則以各線圈圖案520e，520f為中心之同心圓狀產生磁 通MF，藉由此磁通MF在線圈圖案520e，520f間產生電磁 耦合。此時，如圖3 1 (b)所示，若在線圈圖案520e，520f間 設置磁性體樹脂層503，則藉由兩線圈圖案520e，520f產生 37 201206062 之磁通MF集中在透磁率大之磁性體樹脂層5〇3。 亦即’如圖31(c)所示，在兩線圈圖案52〇e, 52〇f間產 生之磁通MF，分別如同圖中箭頭所示，.往線圈圖案52〇e， 520f之方向移動。是以，弱化線圈圖案52〇% 52〇f間之電 磁耦合。藉此，往磁性體樹脂層5〇3之磁通MF之集中度取 決於磁性體樹脂層503之透磁率，因此藉由將透磁率“r 不同之磁性體樹脂層503設置在多層基板5〇2，可調整線圈 圖案520e，5 20f間之電磁耦合之耦合係數。 如上述’根據本實施形態，可達到與上述第1實施形 態相同之效果且可達到以下之效果。亦即，作為諧振器圖 案’形成具有第i線圈L5 1之第1諧振器電路504a之第1 諧振器圖案' 與形成具有第2線圈L52之第2諧振器電路 5〇4b之第2諧振器圖案，在俯視時係並排設置於多層基板 502 ’藉此形成第i線圈L51之第1線圈圖案520a與形成 第2線圈L52之第2線圈圖案520b電磁耦合，可形成各種 濾波器電路（BPF電路504)。 此時’藉由在形成第1線圈L51之第1線圈圖案520a 與形成第2線圈L52之第2線圈圖案52〇b之間設置磁性體 樹脂層503 ’在第1線圈[51及第2線圈L52產生之磁通 MF集中在透磁率以r大之磁性體樹脂層503，因此妨礙在彼 此線圈L51，L52產生之磁通MF之電磁耦合，弱化第1線 圈L51與第2線圈L52之間之電磁耦合，使耦合係數κ變 小。由於往磁性體樹脂層503之磁通MF之集中度取決於磁 性體樹脂層5〇3之透磁率"r，因此僅在多層基板502設置 38 201206062 透磁率Vr不同之磁性體樹脂層503即可輕易調整第ι線圈 L51與第2線圈L52間之電磁耦合之耦合係數κ。 又，欲弱化第1線圈L51與第2線圈U2間之電磁輕 合之情形，即使不使第i線圈L51與第2線圈⑸之距離 物理上遠離由於僅在多層基板502兮罟# Λ y ,黍锻。又置磁性體樹脂層5〇3 即可弱化電磁耦合，因此可謀求多層晶片型BpF元件5⑻ 之小型化。 又，藉由設置磁性體損耗小之磁性體樹脂層，能使茂 漏電流損耗變小而謀求線圈之Q值之增加(例如，磁性體樹 脂層之 tan <5 < 0.1)。 、 (第8實施形態） 接著，參照圖32說明本發明之電子零件之第8實施形 態之多層晶片型帶通濾波器元件。 (構成） 圖3 2係顯示設在本發明之電子零件之第8實施形態之 多層晶片型帶通濾波器元件之帶通濾波器電路6〇4之等效 電路的圖》此第8實施形態與上述第7實施形態不同之點 在於，如圖32所示’設在多層晶片型帶通濾波器（BpF)元件 内部之電路構成不同。 亦即，形成第1諧振器電路604a之第1線圈L61與形 成第2諸振器電路604b之第2線圈L62係藉由電容器C65 耦合。由於其他構成與上述第7實施形態相同，因此賦予 相當符號以省略該構成之說明。 (帶通濾波器之頻’率特性） 39 201206062 接著’針對多層晶片型BPF元件之頻率特 圖33係顯示圖32所示之多層晶片型帶通濟波。進行說明' 率特性之-例的圖，U)係顯示線圈L61與線圈广件之靡 電磁耦合之耦A筏金 L62之間之 之稱〇係數h 〇 4時之頻率特性， η之 L61與線圈L62之間之電仙合之麵合係數示線圈 率特性’ (C)係顯示線圈L61與線圈L62之 ·5時之頻 搞合係數κ=0.6時之頻率特性。又，圖磁執合之 上側曲線係顯示反射特性，下側曲線係顯示通過=別^ 如圖33所示，藉由使形成多層晶片型 L61 L62夕Φ # i»人 几件之線圈 ， 之電磁耦合之耦合係數K變化，多層aThe degree of opening is v, although the size of the coil is fortunately, the size of the coil (the coil) becomes larger and the height becomes higher. However, according to the above configuration, the inductance of the coil is increased by the layer 3 of the injection tree. Therefore, a coil having a large inductance L can be formed inside the Thunder element, and the height of the electronic component can be reduced. (Second Embodiment) Next, a multilayer wafer type band pass filter element according to a second embodiment of the electronic component of the present invention will be described with reference to Figs. 2 to 14 . Fig. 12 is a cross-sectional view showing the multilayer wafer type band pass filter device 100 of the second embodiment, and Fig. 12(b) is a cross-sectional view showing the layers 103 of the multilayer wafer type band pass filter device 1 . Fig. 13 is a view showing an equivalent circuit of the band pass filter circuit 104 of the multilayer wafer type band pass filter element 1 shown in Fig. 12. Fig. 14 is a diagram showing 圊12. A diagram showing an example of the frequency characteristics of the multilayer wafer type band pass filter element 1 。. The second embodiment differs from the first embodiment in that it is provided in a multilayer wafer as shown in Figs. The circuit configuration of the inside of the band-pass filter (BPF) element 100 is different. The other configuration is the same as that of the above-described first embodiment, and therefore the corresponding reference numerals are given to omit the description of the configuration. (Configuration) As shown by circle 12 (a) The multilayer wafer type BPF element 100 includes a multilayer substrate 102 formed by firing a laminated ceramic green sheet, and a magnetic resin layer 103 provided on one main surface of the multilayer substrate 102, as shown in FIG. Bandpass filtering formed by conductor patterns such as Ag or Cu Circuit 104. 20 201206062 The 'multilayer wafer type BPF element 100' is formed as a so-called wafer type electronic component having a width χ length χ height of about 1. 0 mmxO.5 mm x 0.3 mm. The multilayer substrate 102 is formed by the first coil. The layer 120, the connection layer! 21, the second coil layer 122, the insulator (dielectric) layer 123, the first capacitor layer 124, the second grid electrode layer 125, the third capacitor layer 126, the wiring layer 127, and the dielectric layer 128 are laminated. In the present embodiment, the dielectric constants of the multilayer substrate 1 〇 2 in the present embodiment are formed by the same ceramics as the ceramic green sheets described in the first embodiment. ε r is configured to be 60. As shown in Fig. 12(c), a pair of left and right coil patterns 120a are formed in the first coil layer 120. Further, the other ends of the coil patterns 120a are transmitted through each other. One end 122b of each of the pair of right and left coil patterns 122a formed in the second coil layer 12 2 is connected to the interlayer connection conductors 12 1 a, 121 b which are symmetrically connected to each other in the conduction structure of the connection layer 1 21. The coil pattern 1 20a on the left side is connected One end 120b is connected to the external electrode The input electrode p丨丨, one end 120c of the right coil pattern 120a is connected to the external electrode, that is, the output electrode P12. As shown in FIG. 12(d), the connection layer 121 is provided with two coils for connecting the first coil layer 120. The interlayer connection conductors 121a, 121b of the conduction structure of the other end of the pattern 12A and the one end 122b of the two coil patterns 122a of the second coil layer 122. Further, as shown in Fig. 12(e), the second coil layer A coil pattern 122a that forms a line shape of the coil L1 2 is symmetrically disposed about 122. Further, one end 122b of the coil pattern 122a is connected to the interlayer connection conductor 121a, 21 201206062 121b through the other end of the coil pattern 12A formed on the left and right of the first coil layer 120, respectively. The terminal 122c is connected to the external electrode through the ground electrode G of the wiring layer 127. As shown in Fig. 12 (f), the insulating layer 123 is provided to adjust the interval of each electrode pattern. Further, as shown in Fig. 12(g), the electrode pattern 124a is provided in the i-th capacitor layer (1), and the capacitor pattern cu is formed by the electrode pattern U4a and the electrode patterns 125a and 125b provided in the second capacitor layer 125. As shown in FIG. 12(h), the second capacitor layer 125 is provided with electrode patterns 丨25a, 125b forming a capacitor cn, that is, an electrode pattern 125a forming an electrode of one of the capacitors c12 and an electrode forming one of the capacitors C13. The electrode pattern 125b is further connected to the external electrode, that is, the input electrode p 1 1, and the electrode pattern 1 2 5 b is connected to the external electrode, that is, the output electrode p 1 2 . As in the case of the circle 12 (1), the third capacitor layer 126 is provided with an electrode pattern 126a which forms the other electrode of the capacitor C12 and an electrode pattern 126b which forms the other electrode of the capacitor ci3. Further, the electrode patterns 126a, 12 are connected to the external electrodes through the ground electrode G of the wiring layer 127, respectively. As shown in Fig. 12(j), the ground electrode g is provided on the wiring layer 127. Further, the ground electrode G is connected to the other end of the coil pattern 122a of the second coil layer 122 shown in Fig. 12(e) through the external electrode. 122c and the electrode patterns 126a, 126b' of the third capacitor layer 126 shown in Fig. 12(i) form a band pass waver circuit 104. Further, as shown in Fig. 12 (k), the insulating layer 123 is provided to adjust the interval between the respective electrode circles. As shown by the circle 12 (b), the magnetic resin layer 1〇3 is formed of the same magnetic resin as the magnetic resin described in the first embodiment. Further, the multilayer wafer type BPF element 1 is manufactured by the same method as that described in the above-mentioned i-th embodiment 22 201206062. (Frequency characteristics of the band pass filter) Next, the frequency characteristics of the multilayer wafer type BPF element 1 will be described. Fig. 14 is a graph showing the frequency characteristics of the multilayer wafer type BPF element 100. The upper side curve shows the reflection characteristics, and the lower side shows the pass characteristics. Further, in the same graph, the reflection characteristics and the pass characteristics in the figure show the frequency characteristics of the non-magnetic resin layer 1〇3 in the two curves on the right side, and the two curves on the left side show the frequency characteristics of the thickness variation of the magnetic resin layer 1 〇3. . (1) Frequency characteristics of the magnetic resin layer 10 3 In the example shown in Fig. 14, the magnetic resin layer 1〇3 is configured such that the magnetic permeability //r becomes 1, and the thickness becomes 〇1 mm. Further, in the middle of the two curves on the right side in the figure, the case where the magnetic resin layer 1〇3 is not provided is shown on the right side, and the case where the magnetic resin layer 丨〇3 is provided on the left side is shown. As shown in the figure, the resonance frequency f of the multilayer wafer type BPF element provided with the magnetic resin layer 103 is shifted to the low frequency side. (2) Frequency characteristics of the thickness change of the magnetic resin layer 1 〇3 In the example shown in Fig. 14, the magnetic resin layer 1 〇3 having a magnetic permeability of 2 Γ is provided on the upper portion of the multilayer substrate 102. In the middle of the two curves on the left side in the figure, the right side shows an example in which the thickness of the magnetic resin layer 103 is 〇.05 mm, and the left side shows an example in which the thickness of the magnetic resin layer 103 is 〇.i mm. As shown in the figure, when the thickness of the magnetic resin layer 10/10 is made thick, the resonance frequency f of the multilayer wafer type BPF element 100 is shifted to the low frequency side. As described above, in the present embodiment, the same effects as those of the above-described third embodiment can be achieved. 23 201206062 (Third Embodiment) Next, a multilayer wafer type flat panel resonator element 2 according to a third embodiment of the electronic component of the present invention will be described with reference to Figs. Fig. 15 is a view showing a multilayer wafer type flat resonator element 200 according to a third embodiment, wherein (a) is a cross-sectional view, and (b) and (c) are layers 203, 220 constituting the multilayer wafer type flat resonator element 200. In the plan view, (d) is a bottom view of the wiring layer 221. Fig. 16 is a view showing an equivalent circuit of the resonator circuit 204 of the multilayer wafer type flat resonator element 200 shown in Fig. 15. Figs. 17 and 18 are views showing an example of the frequency characteristics of the multilayer wafer type flat resonator element 2A shown in Fig. 15. The third embodiment differs from the above-described first and second embodiments in that the circuit configuration of the multi-layer wafer type flat resonator element 200 is different as shown in Figs. The multilayer wafer type flat resonator element 200 of the present embodiment is configured as a distributed constant type resonator in which the length corresponding to the wavelength of the signal to be blocked is set to the line length. Since the other configurations are the same as those of the above-described first and second embodiments, the same reference numerals are given to omit the description of the configuration. (Composition) As shown in the figure! The multilayer wafer type flat panel device element 2 shown in FIG. 5(a) includes a multilayer substrate 2〇2 formed by firing a laminated ceramic wafer, and a magnetic body provided on one main surface of the multilayer substrate 202. As shown by the circle 16, the resin layer 203 is internally provided with a resonator circuit formed of an Ag or Cu body pattern. Further, the multilayer wafer type flat resonator element 2 is formed so as to have a width x length x height on a multilayer substrate 2〇2 24 201206062 formed into a shape having a width X length X height of about 8 mm x 6 mm x 0.5. A so-called wafer type electronic component of a magnetic resin layer 2〇3 having a shape of about 8 mm x 6 mm x 0.1 mm. The layer substrate 202 is integrally formed into a dielectric ceramic layer by laminating and firing the resonator layer 220, the connection layer 222, and the wiring layer 21. Further, each of the 222 layers is formed of the same ceramic green sheet as that of the ceramic green sheet described in the first embodiment. In the present embodiment, the dielectric constant ε r of the multilayer base; fe 202 is configured to be 6 〇. As shown in Fig. 5(C), the resonator layer 220 is provided with a resonator pattern 2 2 0 a, and the input and output lightning electrodes 220b and 220c are combined. Further, the wiring layer 221 is provided with an input electrode P2 1 , an output electrode p22, and a ground electrode 〇. Further, the connection layer 222 is provided with an interlayer connection conductor 22, and the input/output shank electrode 220b and the input electrode p2 1 n, aa + electric are connected through the interlayer connection conductor 222a, and are output to the shank electrode 22Ge and the output. The electrode p22 is connected through the interlayer connection conductor 222b, thereby forming the capacitor (3), (3), and the resonator circuit 204 having the resonator RF shown in FIG. In addition, the electric coupling thief C2 1 is determined by the interval between the input and output light-emitting electrode 2 and the spectrometer pattern 2, and the capacitor C22 is determined by the interval between the input-in coupling coupling electrode 22〇e and the spectrometer pattern (4). capacitance. As shown in Fig. 叩, the magnetic resin layer 203 is formed of the same magnetic resin as the magnetic resin described in the first embodiment. The slab-type flat plate resonator element 2 is manufactured in the same manner as the manufacturing method described in the first embodiment. (Frequency characteristics of the presence or absence of the magnetic resin layer 203) Fig. 17 shows the frequency of the multi-layer base resonator circuit 204 in the state of the non-multilayer wafer type flat resonator element 2012 25 201206062 and the state in which the magnetic resin layer 203 is not provided. A diagram of the characteristics. The harmonic reflection characteristic of the upper side of the same circle is the same as that of the lower side of the figure. In the curve system display, the dotted line curve shows the frequency characteristics of the spectral oscillator circuit 2〇4 of the substrate layer 202 of the magnetic layer of the magnetic layer 2, and the frequency of the multi-layer wafer type flat resonator element 200 is shown. characteristic. In the example of the curve, the magnetic permeability of the magnetic resin layer 2. 3 is composed as follows: as shown in Fig. 17, the magnetic resin layer 2〇3 is provided - the plate resonator element The resonant frequency f of 200 moves to the low frequency side. The slab type flat (frequency characteristic of the magnetic permeability Μ change of the magnetic resin layer 2 〇 3) Fig. a shows the frequency of the multilayer wafer type flat panel resonator element 200 which causes the magnetic permeability of the magnetic resin layer 2 〇 3 (b) shows the 诵 诵 蛀 ( ( ( ( ( ( ( ( Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ In the following, the magnetic permeability of the magnetic resin layer 203 in the order of the low-frequency side is set to be 16' 32. Further, the magnetic permeability "r" of the magnetic tree moon layer 203 can be changed in the magnetic resin layer. What is included is the ratio of the resin amount to the magnetic powder. Therefore, even if the thickness of the magnetic resin layer 2〇3 is thickened, the frequency of the spectrum oscillator can be finely adjusted. As the magnetic permeability of the magnetic resin layer 203 becomes larger, the resonance frequency f of the multilayer wafer type flat panel resonator element 200 shifts to the low frequency side. (Modification of the resonator case) 26 201206062 Fig. 9 Series resonator pattern The modified example, (4) is eight), and the one end is grounded by a few / 4 resonator pattern 2 20e. In addition, Figure 20 shows the variation of the resonator pattern 790f. B) The resonator pattern that you do not show in the shape of the resonator () is a non-circular resonator pattern 22 ^ iJF 5 < fH Φ οολι. (C) is a rectangle-white mode 220h. Further, Fig. 21 is a modification of the straw mushroom i Η - τ 搌 搌 , , , , , , , , , , , , 4 4 4 4 4 4 4 4 4 220 220 220 220 220 220 220 220 220 220 220倮-type oscillating state In the above example, the resonator layer 220c is formed, but instead of the pattern of Figs. 19-21. 220 Resonator Pattern 220a~ Various Resonances Displayed as Modifications As described above, in the present embodiment, the same effects as those of the above-described third embodiment can be achieved. (Fourth Embodiment) Next, a multilayer wafer type resonator element 1a according to a fourth embodiment of the electronic component of the present invention will be described with reference to Fig. 22 . Fig. 22 is a view showing a multilayer wafer type resonator element u according to a fourth embodiment of the electronic component of the present invention, (a schematic cross-sectional view, and (b) is a plan view. This fourth embodiment is different from the above-described third embodiment. The metal film layer 6 is provided on the upper surface of the magnetic resin layer 3 as shown in Fig. 22. The other configuration is the same as that of the above-described first embodiment, and therefore the same reference numerals are given to omit the description of the configuration. 22 (a) and (b), the metal film layer 6 is formed so as to overlap at least a part of the coil pattern 20a in a plan view. Further, the 'metal film layer 6 and the ground electrode G are connected to each other by the interlayer connection conductor 6a. 27 201206062 However, a magnetic field is generated from a coil pattern of a vibrator pattern or a filter circuit formed inside an electronic component, but the generated magnetic field is radiated outside the electronic component. p Other electronic components that are disposed close to the electronic component, However, there is a change in the characteristics of the hai parts, 磁场β χ, the magnetic field invades from the outside to the electronic parts, and the characteristics of the coils of the electronic components are changed. Therefore, according to In the embodiment, the metal film layer 6 is provided on the upper surface of the magnetic resin layer 3 so as to overlap at least a part of the turn pattern 20a in plan view. Therefore, by grounding the metal film layer 6, radiation generated from the coil can be suppressed or Further, it is possible to suppress the change in the characteristics of the circuit pattern caused by the intrusion of the magnetic field from the outside. (Fifth Embodiment) Next, a fifth embodiment of the electronic component of the present invention will be described with reference to Fig. 23. Fig. 23 shows an electronic component of the present invention. The fifth embodiment differs from the above-described first to fourth embodiments in that, as shown in Fig. 23, the magnetic resin layer 3〇3 is different in magnetic permeability. The other components are the same as those of the above-described fourth to fourth embodiments. Therefore, the same reference numerals are given to omit the configuration. As shown in Fig. 23, the electronic component 3 of the present embodiment includes the multilayer substrate 302 and the magnetic body. Further, the magnetic resin layer 3〇3 is composed of ~* layers 303b and 303a having different magnetic permeability yr. According to the above configuration, the same effect as the first embodiment can be obtained. Further, the magnetic resin layer 303 is formed by the plurality of layers 303a, 303b having different magnetic permeability, so that the magnetic permeability Mr of the magnetic resin layer 303 can be adjusted with higher efficiency. For example, the magnetic permeability yr of the layer 303b is made larger. In the present embodiment, the magnetic resin layers 303a and 303b constitute the same as the second layer of r. However, the magnetic permeability of the magnetic resin layer 303 may be further increased. (Sixth embodiment) Next, a sixth embodiment of the φ10w electronic component of the present invention will be described with reference to Figs. 24 to 26. Fig. 24 is an electron of the present invention. Shou Zhu Xia < An enlarged view of a main portion of the sixth embodiment of the electric device. Fig. 25 is a view showing an example of the relationship between the resistance of the spiral type coil and the inductance. Fig. 26 is a view showing an example of the relationship between the number of resistances of the spiral type coil and the value of q. The sixth embodiment differs from the third embodiment described above in that the X-state of the coil [41 is formed, and the green circle patterns 420a to 422a of the coil [41] are formed on the multilayer substrate 402 of the electronic component 400.禺*^ , the direction of the layer of the forged Z is formed into a spiral shape. Since the other configuration is the same as that of the above-described first sinusoidal slab, the same reference numerals are given to omit the description of the configuration. (Structure) As shown in Fig. 24, the electronic component includes a multilayer substrate 4G2 formed by firing a laminated ceramic green sheet, and various filter circuits formed by conductor patterns such as Ag or Cu are provided therein (not shown). ). The base layer substrate 402 includes the i-th to third coil layers 42A to 422, and the i-th and third coil layers 420 to 422 and the connection layer, the insulator (dielectric) layer, the capacitor, the wiring layer, and the like (not shown) are laminated. It is formed by firing. Further, each of the layers forming the multilayer substrate 4G2 is formed by a ceramic tile which is similar to the one described in the above-mentioned 四t. In the first to third coil layers 420 to 422, the substantially three-shaped coil patterns 420a to 422a forming the coil L41 are provided. Further, the first to third coil layers 420 to 422 are integrally provided; the opening directions of the word coil patterns 420a to 422a alternately face in opposite directions. Further, one end 420b of the coil pattern 42A1 provided in the first coil layer and one end 421b of the coil pattern 421a provided in the second coil layer are connected by the interlayer connection conductor 420c of the conduction structure, and the coil pattern 421a is another. The one end 42 lc and the other end 422b of the coil pattern 422a provided in the third coil layer 422 are connected by the interlayer connection conductor 42 1 d of the conduction structure to form the spiral coil L 4 1 . Further, the electronic component 400 is manufactured by the same method as the manufacturing method described in the first embodiment. Further, by laminating a plurality of coil layers in which a substantially square-shaped coil pattern is formed as described above, the coil L4 1 having an arbitrary number of turns can be easily formed. (Relationship between the number of turns of the coil L41 and the inductance) Next, the relationship between the number of turns of the coil L41 and the inductance will be described. Fig. 25 is a view showing an example of the relationship between the number of turns of the coil L41 and the inductance, and ♦ shows the relationship between the number of turns of the coil L4 and the inductance when the magnetic resin layer is not provided on the multilayer substrate. The relationship between the E number of the magnetic permeability resin and the inductance of the magnetic resin layer of the r=2 is the resistance of the coil when the magnetic resin layer having the magnetic permeability of r== 4 is provided on the multilayer substrate. The relationship between inductance. As shown in Fig. 25, the inductance of the coil [41 is increased in proportion to the square of the resistance of the coil L41. When the magnetic permeability of the magnetic resin layer provided on the multilayer substrate is increased, the inductance of the coil L41 increases. (Relationship between the number of turns of the coil L41 and the Q value) Next, the relationship between the number of turns of the coil L41 and the Q value will be described. Fig. 26 is a view showing an example of the relationship between the number of turns of the coil L4 1 and the value of q, and shows the relationship between the number of turns of the coil L4 1 and the Q value when the magnetic resin layer is not provided on the multilayer substrate, and the ▲ system displays The relationship between the number of turns of the coil L41 and the Q value when the magnetic resin layer of the magnetic permeability #2 is provided on the multilayer substrate is a coil which is displayed when the magnetic resin layer of the multilayer substrate is provided with a magnetic permeability #r = 4 [41] The relationship between the number and the Q value. As shown in Fig. 26, the Q value of the coil L41 also increases as the number of turns of the coil L41 increases. Further, when the magnetic permeability V r of the magnetic resin layer provided on the multilayer substrate is increased, the Q value of the coil L4 1 is increased. As described above, according to the present embodiment, the same effects as those of the above-described third embodiment can be achieved. Further, since the coil patterns 420a to 422a are formed in a spiral shape in the lamination direction of the multilayer substrate 4A2, the inductance of the coil L41 becomes larger in proportion to the square of the number of turns of the coil L41 in the lamination direction, but the coil pattern 420a is formed. The magnetic flux generated by the energization of 422a is concentrated in the direction along the central axis of the coil L41. Therefore, by providing the magnetic resin layer on at least one main surface of the multilayer substrate 402, the magnetic flux density concentrated in the direction of the magnetic flux generated along the central axis of the coil L41 can be increased with high efficiency, so that the efficiency can be further adjusted. The inductance of the coil L41 makes it larger. Further, by forming the magnetic resin layer with a material having a small magnetic loss, the q value of the coil L4 1 can be increased with high efficiency. Further, by providing the magnetic resin layer on one main surface of the multilayer substrate 402, the floating capacitance generated in the coil patterns 420a to 422a forming the coil L41 is affected by the dielectric constant ε Γ of the magnetic resin layer 31 201206062, but Since the coil patterns 420a to 422a are arranged in the lamination direction of the multilayer substrate 4〇2, the coil pattern 42〇a on the uppermost side or the coil pattern 422a on the lowermost side is the most affected by the magnetic resin layer. Therefore, even if the magnetic resin layer is provided on one main surface of the multilayer substrate 402 formed by the coil L41 having the predetermined characteristics, the floating capacitance generated only in one of the coil patterns 420a to 422a forming the coil L41 is subjected to the magnetic resin layer. The influence of the dielectric constant ε r is such that the characteristics of the coil L41 are not greatly affected by the dielectric constant of the magnetic resin layer, and the design range of the magnetic resin layer can be increased to increase the magnetic resin layer. The selection range of materials such as magnetic powder or resin. In the present embodiment, only the configuration of the coil L41 will be described. However, various electronic circuits such as a resonator circuit, a filter circuit, a balance circuit, a directional coupler, and an antenna circuit are formed in the electronic component 400 by using the spiral coil L4i. Just inside. (Seventh Embodiment) Next, a multilayer wafer type band pass filter element 5A according to the first embodiment of the electronic component of the present invention will be described with reference to Figs. 27 to 3B. Fig. 27 is a view showing a multilayer wafer type band-passing wave device 5〇0 according to the seventh embodiment, (4) is a cross-sectional view, and (b) to (1) are layers 503, 520 to λα constituting the multilayer wafer type filter element 500. Top view of dip, _, 527. Fig. 28 > shows a diagram of an equivalent circuit of the pass filter circuit 504, which is shown in Fig. 27, which is a multi-layered wafer, s. The seventh embodiment differs from the above-described 形态 尬 尬 ^ ^ ^ ^ ^ ^ 2012 2012 2012 32 201206062 as shown in Figs. 27 and 28, is provided inside the multi-layer wafer type band pass filter (BPF) element 500 The circuit composition is different. That is, as the resonator pattern of the present invention, the first resonator pattern having the first resonator circuit 5〇4a of the first coil L5 1 and the second resonator circuit 504b having the second coil L52 are formed. The two resonator patterns are arranged side by side on the multilayer substrate 5〇2 in plan view. Further, the magnetic tree wax layer 503 is provided between at least the first coil pattern 52Aa forming the first coil L51 and the second coil pattern 520b forming the second coil L52. Since the other configurations are the same as those of the above-described first embodiment, the corresponding reference numerals are given to omit the description of the configuration. (Structure) As shown in Fig. 27 (a), the multilayer/wafer type BPF element 500 includes a multilayer substrate 5〇2 formed by firing a laminated ceramic green sheet, and a magnetic body provided on one main surface of the multilayer substrate 502. As shown in FIG. 28, the resin layer 503 is provided with a band pass filter circuit 5〇4 formed of a conductor pattern such as Ag or Cu. The band pass filter circuit 504 of the present embodiment has the first coil pattern 520a and the second coil L52 of the first coil [51] of the first resonator circuit 504a and the second resonator circuit 5〇4b, respectively. The second coil pattern 52〇b is formed by electromagnetic interference. The multilayer substrate 502 is composed of a first coil layer 52, a first connection layer 521, a first capacitor layer 522, a second capacitor layer 523, a second connection layer 524, a third capacitor layer 525, a wiring layer 526, and an insulator ( The dielectric layer 5 27 is laminated and fired to be integrally formed. Further, each of the layers 5 20 to 5 27 is formed of the same ceramic green sheet as that of the ceramic green sheet described in the first embodiment. As shown in FIG. 27(c), the first coil layer 520 is formed with a substantially L-shaped first coil pattern 520a forming the coil L51 and a second coil pattern 520b forming the coil L52. Further, the electrode pattern 523a of the second capacitor layer 523 and the electrode pattern 525a of the third capacitor layer 525 are connected to one end of the coil pattern 520a through the first connection layer 521, the first capacitor layer 522, and the second connection layer 524. The interlayer connection conductor 520c of the conduction structure. Further, one of the coil patterns 520b is provided with an electrode pattern 523b that connects the second capacitor layer 523 and an electrode pattern 525b of the third capacitor layer 525 through the first connection layer 521, the first capacitor layer 522, and the second connection layer 524. The interlayer connection conductor 520d of the conduction structure. Further, the other end of each of the coil pattern 520a and the coil pattern 520b is connected to a ground electrode which is an external electrode. As shown in FIG. 27(d), the second connection layer 521 is provided with electrodes for connecting one end of the first coil pattern 520a of the i-th coil layer 520 and the electrode pattern 523a of the second capacitor layer 523 and the third capacitor layer 525. The interlayer connection conductor 521a of the conduction structure of the pattern 525a. Further, the first connection layer 521 is provided with an interlayer between the one end of the second coil pattern 520b of the first coil layer 520 and the electrode pattern 523b of the second capacitor layer 523 and the electrode pattern 525b of the third capacitor layer 525. The conductor 521b is connected. Also, as shown in Fig. 27(e), at the first! The capacitor layer 522 is provided with an electrode pattern 522a forming the other electrode of the capacitor C52, and the capacitor pattern C52 is formed by the electrode pattern 522& and the electrode pattern 523a provided in the second capacitor layer 523. Further, the first capacitor layer 522 is provided with an electrode pattern 522b forming the other electrode of the capacitor C54, and the capacitor pattern C54 is formed by the electrode pattern 522b and the electrode pattern 523b provided in the second capacitor layer 523. Further, the electrode patterns 522a 34 201206062 and the electrode patterns 522b are respectively connected to a ground electrode which is an external electrode. Further, the first capacitor layer 522 is provided with a connection between one end of the first coil pattern 520a of the first coil layer 520 and the electrode pattern 523a of the second capacitor layer 523 and the electrode pattern 525a of the third capacitor layer 525. The interlayer connection conductor 522c is constructed. Further, the first capacitor layer 522 is provided with a conductive structure for connecting one end of the second coil pattern 520b of the first coil layer 520 and the electrode pattern 523b of the second capacitor layer 523 and the electrode pattern 525b of the third capacitor layer 525. The interlayer connection conductor 5 22d. Further, as shown in Fig. 27 (f), the second capacitor layer 523 is provided with an electrode pattern 523a for forming one of the electrodes of the capacitor C52 and an electrode pattern 523b for forming one of the electrodes of the capacitor C54. As shown in FIG. 27(g), the second connection layer 524 is provided with electrodes for connecting one end of the first coil pattern 520a of the first coil layer 520 and the electrode pattern 523a of the second capacitor layer 523 and the third capacitor layer 525. The interlayer connection conductor 524a of the conductive structure of the pattern 525a. Further, the second connection layer 524 is provided with an interlayer between the one end of the second coil pattern 520b of the first coil layer 520 and the electrode pattern 523b of the second capacitor layer 523 and the electrode pattern 525b of the third capacitor layer 525. The conductor 524b is connected. Further, as shown in FIG. 27(h), an electrode pattern 525a forming one of the electrodes of the capacitor C5 1 is provided in the third capacitor layer 525, and a capacitor C51 is formed by the electrode pattern 525a and the electrode pattern 526a provided on the wiring layer 526. . Further, the third capacitor layer 525 is provided with an electrode pattern 525b' which forms one of the electrodes of the capacitor C53. The capacitor C53 is formed by the electrode pattern 525b and the electrode pattern 526b provided on the wiring layer 526. 35 201206062 As shown in Fig. 27 (1), the wiring layer 526 is provided with an electrode pattern 526a which forms the other electrode of the capacitor C51 and an electrode pattern 526b which forms the other electrode of the capacitor C53. Further, the electrode pattern 526a is connected to the external electrode, that is, the input electrode P51'. The electrode pattern 526b is connected to the external electrode, that is, the output electrode P52', and the band pass filter circuit 504 is formed. Further, as shown in Fig. 27 (j), the insulator layer 527 is provided to adjust the interval between the electrode patterns. As shown in Fig. 27 (b), the magnetic resin layer 5〇3 is formed of the same magnetic resin as the magnetic resin described in the first embodiment, and is disposed in the first coil pattern of the first coil layer 520. Between 52〇a and the second coil pattern 52仳. Further, the multilayer wafer type BPF element 500 is manufactured by the same method as the manufacturing method described in the above i-th embodiment. (Frequency characteristics of the band pass filter) Next, the frequency characteristics of the multilayer wafer type BPF element 5 进行 will be described. Fig. 29 is a view showing an example of the frequency characteristics of the multilayer wafer type BPF element 5' shown in Fig. 27, wherein (a) shows the coupling coefficient κ = 〇 4 of the electromagnetic coupling between the coil L5 丨 and the coil L52. The frequency characteristic, (b) shows the frequency characteristic when the coupling coefficient κ = 5 between the electromagnetic coupling between the coil L5 1 and the coil L52, and (C) shows the electromagnetic coupling between the coil L5 1 and the coil L52. The frequency characteristics of the system and the number K = G·6. Further, in Figs. 29(a) to (c), the upper curve shows the reflection characteristics, and the lower curve shows the transmission characteristics. As shown in Fig. 29, the frequency characteristic of the multilayer wafer type BPF element 500 changes by changing the coupling coefficient κ of the electromagnetic coupling of L5 1, L52 forming the multilayer wafer type BPF element 500. 36 201206062 (Modification of Coil Pattern) Next, an example of a modification of the coil pattern will be described. Fig. 3 is a view showing an example of a modification of the coil pattern, wherein (a) shows the coil patterns 520a and 520b of the present embodiment, and (b) shows the coil of the conduction structure formed in the lamination direction of the multilayer substrate 5? Pattern 52〇e, 5 20f. In the present embodiment, as shown in Fig. 30 (a), the coil patterns 520a and 520b having a substantially L shape in plan view are arranged side by side, and a magnetic resin layer 503 is provided between the coil pattern 52A and the coil pattern 520b. . On the other hand, as shown in Fig. 30 (b), the coil patterns 52 〇 e and 52 〇 f of the conduction structure provided in the lamination direction of the multilayer substrate 502 are formed to be arranged side by side in plan view. Further, a magnetic resin layer 503 may be provided between the coil pattern 52〇e and the coil pattern 52〇f. (Adjustment of Coupling Coefficient of Magnetic Resin Layer) Next, an operation of adjusting the engagement coefficient of electromagnetic coupling between the coil L51 and the coil L52 by providing the magnetic resin layer 503 will be described with reference to Fig. 3 . The figure is a diagram for explaining the effect of providing the magnetic resin layer 503 on the multilayer substrate. (a) shows a state of the magnetic flux MF generated by the coil, and (b) shows that the magnetic resin layer 503 is provided. (c) is a diagram showing a change in the magnetic flux MF caused by the magnetic resin layer 503 being provided on the multilayer substrate. As shown in FIG. 31 (a), the coil pattern 520e is formed by the conductive structure, and the magnetic flux MF is generated concentrically around the respective coil patterns 520e, 520f, whereby the magnetic flux MF is in the coil pattern. Electromagnetic coupling occurs between 520e and 520f. At this time, as shown in FIG. 31 (b), when the magnetic resin layer 503 is provided between the coil patterns 520e and 520f, the magnetic flux MF generated by the two coil patterns 520e and 520f is concentrated on the magnetic permeability. The magnetic resin layer 5〇3. That is, as shown in Fig. 31(c), the magnetic flux MF generated between the two coil patterns 52〇e, 52〇f is moved in the direction of the coil patterns 52〇e, 520f as indicated by the arrows in the figure. . Therefore, the electromagnetic coupling between the coil patterns 52〇% 52〇f is weakened. Thereby, the concentration of the magnetic flux MF to the magnetic resin layer 5〇3 depends on the magnetic permeability of the magnetic resin layer 503, and therefore the magnetic resin layer 503 having a different magnetic permeability “r” is disposed on the multilayer substrate 5〇. 2. The coupling coefficient of the electromagnetic coupling between the coil patterns 520e and 5 20f can be adjusted. As described above, according to the present embodiment, the same effects as those of the first embodiment described above can be obtained, and the following effects can be obtained. The pattern 'forms the first resonator pattern ' having the first resonator circuit 504a of the i-th coil L5 1 and the second resonator pattern forming the second resonator circuit 5〇4b having the second coil L52, and is a plan view The first coil pattern 520a in which the i-th coil L51 is formed and the second coil pattern 520b in which the second coil L52 is formed are electromagnetically coupled to each other, and various filter circuits (BPF circuits 504) can be formed. The magnetic resin layer 503 ′ is provided between the first coil pattern 520 a forming the first coil L51 and the second coil pattern 52 〇 b forming the second coil L52 in the first coil [51 and the second coil L52. Flux MF concentrates on permeability to r Since the magnetic resin layer 503 is large, the electromagnetic coupling between the magnetic fluxes MF generated in the coils L51 and L52 is prevented, and the electromagnetic coupling between the first coil L51 and the second coil L52 is weakened, and the coupling coefficient κ is reduced. The concentration of the magnetic flux MF of the magnetic resin layer 503 depends on the magnetic permeability "r of the magnetic resin layer 5〇3, so that it is easy to provide only the magnetic resin layer 503 having a different magnetic permeability Vr on the multilayer substrate 502 38 201206062. The coupling coefficient κ of the electromagnetic coupling between the first coil L51 and the second coil L52 is adjusted. Further, in order to weaken the electromagnetic coupling between the first coil L51 and the second coil U2, even if the i-th coil L51 and the second coil are not made Since the distance of the coil (5) is physically distant, since the electromagnetic coupling is weakened only by the multilayer substrate 502 兮罟 # Λ y, and the magnetic resin layer 5 〇 3 is placed, the multilayer wafer type BpF element 5 (8) can be miniaturized. In addition, by providing a magnetic resin layer having a small magnetic loss, the leakage current loss can be reduced, and the Q value of the coil can be increased (for example, tan of the magnetic resin layer). <5 < 0.1). (Eighth Embodiment) Next, a multilayer wafer type band pass filter element of an eighth embodiment of the electronic component of the present invention will be described with reference to Fig. 32. (Structure) Fig. 3 is a view showing an equivalent circuit of a band pass filter circuit 6〇4 of a multilayer wafer type band pass filter element according to an eighth embodiment of the electronic component of the present invention. The difference from the seventh embodiment described above is that the circuit configuration inside the multilayer wafer type band pass filter (BpF) element is different as shown in Fig. 32. That is, the first coil L61 forming the first resonator circuit 604a and the second coil L62 forming the second resonator circuit 604b are coupled by the capacitor C65. The other configuration is the same as that of the seventh embodiment described above, and therefore the same reference numerals are given to omit the description of the configuration. (Frequency characteristic of band-pass filter) 39 201206062 Next, the frequency of the multilayer wafer type BPF element is shown in Fig. 32 as a multilayer wafer type band-passing wave shown in Fig. 32. A diagram showing the 'rate characteristic-example, U) shows the frequency characteristic when the coil coefficient L61 and the coil electromagnetic coupling coupling A gold L62 are called the coefficient h4, η L61 and The surface coefficient of the electric power combination between the coils L62 and the coil ratio characteristic '(C) is a frequency characteristic when the frequency of the coil L61 and the coil L62 is 5, which is a coefficient κ=0.6. Moreover, the curve on the upper side of the magnetic display shows the reflection characteristic, and the curve on the lower side shows the pass of the other type, as shown in FIG. 33, by forming a coil of several pieces of the multilayer wafer type L61 L62 Φ Φ # i» Coupling coefficient K of electromagnetic coupling changes, multilayer a

元件之頻率特性變化。 日日3L BPF 如上述，根據本實施形態，可達到與上 態相同之效果。 第7實施形 (第9實施形態） 接著，參照圖34說明本發明之電子零件之第9實施形 態之多層晶片型帶通濾波器元件圖34係顯示本發明 之電子零件之帛9實施形態之多層晶片型帶通遽波器元件 600的圖’（a)係俯視圖，（b)係剖面圖，（(〇係顯示頻率特性 之一例的圖。 (構成） 此第9實施形態與上述第7實施形態大幅不同之點在 於，如圖34(a)、（b)所示，在俯視時並排設置於多層基板6〇2 之一主面之第1線圈圖案620a與第2線圈圖案620b之間設 有腔體610，在腔體610填充有磁性體樹脂層603。由於其 40 201206062 他構成與上述帛7實施形態相同’因此賦予相當符號以省 略該構成之說明。 (帶通濾波器之頻率特性） 接著’針對多層晶片型BPFit件刚之頻率特性進行 說明。圖34⑷係顯示磁性體樹脂層6〇3之有無之頻率特 性’上側曲線係顯示反射特性，下側曲線係顯示通過特性。 如圖34⑷所示，藉由在形成多層晶片型卿元件_ 之線圈圖案620“鳥間設置磁性體樹脂層6〇3，通過頻率 之插入損耗變大，可知第i線圈圖案62〇a與第2線圈圖案 620b之間之電磁輕合變弱。 ^如上述，根據本實施形態，可達到與上述第7實施形The frequency characteristics of the component change. Daily 3L BPF As described above, according to the present embodiment, the same effect as the above state can be obtained. (Embodiment 9) Next, a multilayer wafer type band pass filter element according to a ninth embodiment of the electronic component of the present invention will be described with reference to Fig. 34. Fig. 34 shows an embodiment of the electronic component according to the present invention. Fig. 4(a) is a plan view and (b) is a cross-sectional view of the multilayer wafer type band pass chopper element 600. ((Figure) shows an example of frequency characteristics. (Configuration) The ninth embodiment and the seventh The embodiment differs greatly in that, as shown in FIGS. 34(a) and 34(b), the first coil pattern 620a and the second coil pattern 620b are disposed side by side on one main surface of the multilayer substrate 6〇2 in plan view. A cavity 610 is provided, and the magnetic body resin layer 603 is filled in the cavity 610. Since it is the same as the above-described 帛7 embodiment, it is given the same reference numeral to omit the description of the configuration. (The frequency of the band pass filter (Features) Next, the frequency characteristics of the multilayer wafer type BPFit member will be described. Fig. 34 (4) shows the frequency characteristics of the presence or absence of the magnetic resin layer 6〇3. The upper curve shows the reflection characteristics, and the lower curve shows the pass characteristics. As shown in FIG. 34(4), by providing the magnetic resin layer 6〇3 between the birds in the coil pattern 620 in which the multilayer wafer type element is formed, the insertion loss at the frequency is increased, and the i-th coil pattern 62〇a and the second coil are known. The electromagnetic coupling between the patterns 620b is weakened. As described above, according to the present embodiment, the seventh embodiment can be achieved.

態相同之效果且可達到以下之纷I 延以卜之政果。亦即，配置在形成第1 線圈之第1線圈圖案62〇a與形成第2線圈之第2線圈圖案 6鳩之間之腔體610係設在多層基板術，在腔體61〇填 充有磁性體樹脂6Q3,因此藉由在第1線圈及第2線圈產生 之磁通集中在填充於腔體61〇之磁性體樹脂6〇3，該磁性體 樹脂6 0 3作用為電磁屏莊的 #政此使第1線圈與第2線圈間之 電磁耦合之耗合係數推__丰_ , 進步變小。此時，藉由使磁性體樹 脂603之透磁率轡女，t , β复大亦可大致消除第1線圈及第2線 圈間之電磁耦合。 (其他） 接著’參照圖35〜圖39笱日曰y·夕« _ 明在多.層基板之一主面設置 磁性體樹脂層之構成之# 再成之變形例。圖35〜圖39係顯示設在多 層基板之磁性體樹脂層轡 變七例的圖，各圖之（a)分別顯示 41 201206062 俯視圖，各圖之⑻分別顯示剖面圖。此外，以卞說明中， 針對與上述形態相同之構成賦予相同符號以省略該構 說明。 如圖35所示，在設在多層晶片型耐元件6〇〇之多層 基板602之一主面之腔體61〇，以不從腔體61〇溢出之方式 填充磁性體樹脂以形成磁性體樹脂層6〇3a亦可。 如圖36所示，在電子零件7〇〇之多層基板7〇2之—主 面設置遮罩層705,在藉由遮罩層7〇5形成之凹部以覆蓋第 1線圈圖案720a與第2線圈圖案72〇b整體之方式填充磁性 體樹脂以形成磁性體樹脂層703亦可。 如圖37所示，在電子零件8〇〇之多層基板8〇2之_主 面设置遮罩層805、配置在第1線圈圖案82〇a與第2線圈 圖案820b間之腔體810，在藉由遮罩層8〇5及腔體81〇形 成之凹部填充磁性體樹脂以形成磁性體樹脂層8〇3亦可。 如圖38所示，在設置形成在電子零件9〇〇之多層基板 902之積層方向之導通構造之第1線圈圖案92〇a與第2線 圈圖案920b時，在多層基板902之一主面設置遮罩層9〇5， 在藉由遮罩層905形成之凹部填充磁性體樹脂以形成磁性 體樹脂層903亦可。 如圖39所示，在設置形成在電子零件之多層基 板1002之積層方向之導通構造之第1線圈圖案i〇2〇a與第 2線圈圖案1020b時，在多層基板1002之一主面之第1線 圈圖案1020a與第2線圈圖案1020b之間設置腔體1〇1〇， 在腔體1010填充磁性體樹脂以形成磁性體樹脂層1 〇 〇 3亦 42 201206062 可0 此外’本發明並不限於上述實施形態’在不脫離其趣 曰之範圍内’可對上述說明以外者進行各種變更，例如， 僅將欲彳于到需要大電感之磁性體樹脂層之效果之線圈圖案 配置在磁性體樹脂層之内部或磁性體樹脂層及電介質陶瓷 層之邊界附近’將其他線圈圖案配置在多層基板（電介質陶 究層）之内部亦可。 又，較佳為，以透磁率V r大於丨之方式構成磁性體樹 月曰層。又，構成磁性體樹脂層之磁性體材料之粒子徑為何 種大小皆可，但有鑑於在更高頻帶之電子零件之使用，較 佳為，磁性體材料之粒子徑為2 #爪以下。又，藉由形成磁 性損耗小之磁性體樹脂層，能將電子零件構成為更適於高 頻。 又，僅在作為電介質陶瓷層之多層基板之至少一主面 設置磁性體樹脂層，可達到上述各種效果，因此可容易在 電子零件之未設置磁性體樹脂層之面形成外部電極等。是 以，可容易將本發明適用在表面構裝用之晶片零件。又， 在多層基板之兩主面設置磁性體樹脂層亦可。 再者，如圖i2等所示，僅以形成有既定電極圖 案之電介質層形成電容器或線圈之情形，在積層後電介質 層之燒成後，僅在電介質層之至少一主面形成磁性體樹脂 層即可，因此能容易進行電子零件之製造。又，如以往， 僅以電介質層形成線圈之情形，由於極力減少線圈之洩漏 電流等導致之Q值降低，因此在線圈之上下未形成電極圖 43 201206062 案之電介質層形成為虛置層，但本發明之圖1、圖12等 示之構成，由於設在線圈上部之磁性體樹脂層之透磁率 為1以上，因此設置磁性體樹脂層可降低電子零件之古声 又，本發明亦可適用於模組等之集合基板，但如圖1、 圖1 2等所示，藉由將本發明適用於晶片型之被動零件，除 了上述製造方法之優點之一即能容易形成電子零件之外， 亦可較僅以電介質層形成電子零件時之電氣特性更提升特 性。 又，上述實施形態中，在多層基板形成長方體狀之凹 狀腔體，但腔體之形狀並不限於上述形狀，貫通多層基板 开> 成腔體亦可，形成為圓柱狀腔體亦可。 【圖式簡單說明】 圖1 (a) (g)係顯示本發明之電子零件之第丨實施形態 之多層晶片型諧振器元件的圖。 @ 2係顯不圖1所示之多層晶片型諸振器元件之等效 電路的圖i 圖3係顯示圖] _ 闕1所不之多層晶片型諧振器元件之頻率 特性之一例的圖。 圖4係顯示圖〗 _ _ 1所不之多層晶片型諧振器元件之頻率 特性之一例的圖。 圖5係顯示圖 _ _ 1所不之多層晶片型諧振器元件之頻率 特性之一例的圖。 圖6(a)〜（c)〆系_ ’、.，員示線圈圖案之形狀之變形例的圖。 圖 7(a) 、 （b)值& _ 、顒示線圈圖案之構造之變形例的圖。 201206062 圖8⑷、（b)係顯示線圈圖案之構造之變形例的圖。 圖9(a) (e)係顯示設有遮罩層之例的圖。 圖10(a)、(b)係顯示設有線圈圖案之層不同之例的圖。 圖U(a)、(b)係顯示設有線圈圖案之層不同之例的圖。 圖吻）〜00係顯示本發明之電子零件之第：實施形態 之多層晶片型帶通濾波器元件的圖。 圖係顯不圖12所不之多層晶# M m㈣ 之等效電路的圖。 圖係.、、具不圖12所示之多層晶片㈣$ u _㈣ 之頻率特性之一例的圖。 圖15(a)〜（d)係顯示本發明之電子零件之第3實施形態 之多層晶片型平板諧振器元件的圖。 圖16係顯示圖1 $如· + +夕„ 之等效電㈣_。 層晶片型平板缝器元件 圖係.·、具7F圖1 5所示之多層晶片型平板諸振器元件 之頻率特性之一例的圖。 口。圖18⑷、（b)係顯示圖15所示之多層晶片型平板諸振 益7L件之頻率特性之一例的圖。 .圖19U)、_顯示請振器圖案之變形例的圖。 圖20(a)〜⑷係顯示諧振器圖案之變形例的圖。 圖21係顯㈣振器圖案之變形例的圖。 圖22(a)、（b)係顯示本發明之電子零件之第*實施形態 之夕層晶片型諧振器元件的圖。 係、..、、貝不本發明之電子零件之第$實施形態的圖。 45 201206062 圖24係本發明之電子零件之第6實施形態的主要部分 放大圖。 1 圖25係顯不螺旋型線圏之匝數與電感之關係之—例的 圖。 圖26係顯不螺旋型線圈之匝數與Q值之關係之-例的 圖。 圖27⑷〜（J)係顯示本發明之電子零件之帛7實施形魄 之多層晶片型帶通濾波器元件的圖。 圖28係.4不圖27所示之多層晶片型帶通濾波器元件 之等效電路的圖。 圖29(a) (c)係、顯示圖27所示之多層晶片型帶通滤波 器元件之頻率特性之一例的圖。 圖30(a) (b)係顯示線圈圖案之變形例的圖。 圖3 1(a)〜（c)係用以說明在多層基板設置磁性體樹脂 層之效果的圖。 圖32係顯示本發明之電子零件之第8實施形態之多層 晶片型帶通濾波器元件之等效電路的圖。 圖33(a)〜（c)係顯示圖32所示之多層晶片型帶通濾波 器元件之頻率特性之一例的圖。 圖34(a)〜（c)係顯示本發明之電子零件之第9實施形態 之多層晶片型帶通濾波器元件的圖。 圖35(a)、（b)係顯示設在多層基板之磁性體樹脂層之變 形例的圖。 圖36(a)、（b)係顯示設在多層基板之磁性體樹脂層之變 46 201206062 形例的圖。 圖37(a) (b)係顯示設在多層基板之磁性體樹脂層之變 形例的圖。 圖38(a) (b)係顯示設在多層基板之磁性體樹脂層之變 形例的圖。 圖39(a)、（b)係顯示設在多層基板之磁性體樹脂層之變 形例的圖。 圖40(a)、（b)係顯示習知電子零件之一例之積層型濾波 器的圖。 【主要元件符號說明】 1，1 a 多層晶片型諸振器元件（電子零件） 2, 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 多層基板 20a, 20d, 20e, 20f, 120a, 122a, 420a, 421a, 422a 520a 520b, 520e, 520f, 620a, 620b, 720a, 720bs 820a, 820b 920a 920b, 1020a, 1020b 線圈圖案 3, 103, 203, 303, 503, 603, 603a, 703, 803, 9〇3j 1〇〇3 磁性體樹脂層 4, 204, 504a, 504b, 604a, 604b 諧振器電路（譜振 器圖案） 5, 5a, 705, 805, 905 遮罩層 100, 500, 600 多層晶片型帶通濾波器元件（電子零件） 200 多層晶片型平板諧振器元件（電子零件） 220a〜220i 諧振器圖案 201206062 電子零件 300, 400, 700, 800, 900, 1000 610, 810, 1010 腔體 48The same effect can be achieved and the following can be achieved. In other words, the cavity 610 disposed between the first coil pattern 62〇a forming the first coil and the second coil pattern 6鸠 forming the second coil is provided on the multilayer substrate, and the cavity 61 is filled with magnetic Since the magnetic resin generated in the first coil and the second coil concentrates on the magnetic resin 6〇3 filled in the cavity 61〇, the magnetic resin 6 0 3 acts as an electromagnetic panel. This pushes the coefficient of the electromagnetic coupling between the first coil and the second coil to a small value, and the progress is small. At this time, by making the magnetic permeability of the magnetic resin 603 pro, the complexing of t and β can substantially eliminate the electromagnetic coupling between the first coil and the second coil. (Others) Next, a modification example in which the magnetic resin layer is provided on one main surface of one of the plurality of layer substrates is shown in Fig. 35 to Fig. 39. Fig. 35 to Fig. 39 are views showing seven examples of the magnetic resin layer layer provided on the multi-layer substrate. Each of the figures (a) shows a top view of 41 201206062, and (8) of each figure shows a cross-sectional view. In the above description, the same components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be omitted. As shown in FIG. 35, the cavity resin 61 provided on one main surface of the multilayer substrate 602 of the multilayer wafer type resistive element 6 is filled with a magnetic resin so as not to overflow from the cavity 61 to form a magnetic resin. Layer 6〇3a can also be used. As shown in FIG. 36, a mask layer 705 is provided on the main surface of the multilayer substrate 7〇2 of the electronic component 7B, and a recess formed by the mask layer 7〇5 covers the first coil pattern 720a and the second surface. The magnetic resin may be filled in the coil pattern 72A as a whole to form the magnetic resin layer 703. As shown in FIG. 37, a mask layer 805 and a cavity 810 disposed between the first coil pattern 82A and the second coil pattern 820b are provided on the main surface of the multilayer substrate 8A2 of the electronic component 8A. The magnetic resin may be filled in the concave portion formed by the mask layer 8〇5 and the cavity 81〇 to form the magnetic resin layer 8〇3. As shown in FIG. 38, when the first coil pattern 92a and the second coil pattern 920b are formed in the conduction structure formed in the lamination direction of the multilayer substrate 902 of the electronic component 9, the main surface of one of the multilayer substrates 902 is provided. The mask layer 9〇5 may be filled with a magnetic resin in a concave portion formed by the mask layer 905 to form the magnetic resin layer 903. As shown in FIG. 39, when the first coil pattern i〇2〇a and the second coil pattern 1020b which are formed in the conduction structure of the multilayer substrate 1002 of the electronic component are provided, the main surface of one of the multilayer substrates 1002 is provided. A cavity 1〇1〇 is provided between the coil pattern 1020a and the second coil pattern 1020b, and a magnetic resin is filled in the cavity 1010 to form a magnetic resin layer 1 〇〇3 also 42 201206062 can be 0. Further, the present invention is not limited thereto. The above-described embodiment can be variously modified without departing from the scope of the above description. For example, only a coil pattern to be applied to a magnetic resin layer requiring a large inductance is disposed in a magnetic resin. The inside of the layer or the vicinity of the boundary between the magnetic resin layer and the dielectric ceramic layer may be disposed inside the multilayer substrate (dielectric ceramic layer). Further, it is preferable that the magnetic tree moon layer is formed such that the magnetic permeability V r is larger than 丨. Further, the particle diameter of the magnetic material constituting the magnetic resin layer may be any size. However, in view of the use of electronic components in a higher frequency band, the magnetic material has a particle diameter of 2 # claw or less. Further, by forming a magnetic resin layer having a small magnetic loss, the electronic component can be configured to be more suitable for high frequency. Further, since the magnetic resin layer is provided only on at least one main surface of the multilayer substrate as the dielectric ceramic layer, the above various effects can be obtained. Therefore, an external electrode or the like can be easily formed on the surface of the electronic component where the magnetic resin layer is not provided. Therefore, the present invention can be easily applied to a wafer component for surface mounting. Further, a magnetic resin layer may be provided on both main surfaces of the multilayer substrate. Further, as shown in FIG. 2 and the like, in the case where a capacitor or a coil is formed only by a dielectric layer in which a predetermined electrode pattern is formed, after firing of the dielectric layer after lamination, magnetic resin is formed only on at least one main surface of the dielectric layer. The layer is sufficient, so that the manufacture of electronic parts can be easily performed. Further, as in the case where the coil is formed only by the dielectric layer, the Q value is lowered due to the reduction of the leakage current of the coil as much as possible. Therefore, the electrode is not formed above the coil. FIG. 43 The dielectric layer of 201206062 is formed as a dummy layer, but In the configuration shown in Fig. 1, Fig. 12, and the like of the present invention, since the magnetic permeability of the magnetic resin layer provided on the upper portion of the coil is 1 or more, the provision of the magnetic resin layer can reduce the ancient sound of the electronic component, and the present invention is also applicable. In the collective substrate of a module or the like, as shown in FIG. 1, FIG. 1 and the like, by applying the present invention to a passive component of a wafer type, in addition to the advantages of the above manufacturing method, an electronic component can be easily formed. It is also possible to improve the electrical characteristics of the electronic component only when the electronic component is formed. Further, in the above-described embodiment, the rectangular cavity having a rectangular parallelepiped shape is formed on the multilayer substrate, but the shape of the cavity is not limited to the above shape, and the multilayer substrate may be opened and the cavity may be formed into a cylindrical cavity. . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) and (g) are views showing a multilayer wafer type resonator element according to a third embodiment of the electronic component of the present invention. Fig. 3 is a view showing an example of the frequency characteristics of the multilayer wafer type resonator element of Fig. 1 which is not shown in Fig. 1. Fig. 4 is a view showing an example of the frequency characteristics of the multilayer wafer type resonator element which is not shown in Fig. __1. Fig. 5 is a view showing an example of the frequency characteristics of the multilayer wafer type resonator element of Fig. _1. Fig. 6(a) to Fig. 6(c) are diagrams showing a modification of the shape of the coil pattern. Fig. 7 (a), (b) values & _, and a diagram showing a modification of the structure of the coil pattern. 201206062 FIGS. 8(4) and (b) are diagrams showing a modification of the structure of the coil pattern. Fig. 9 (a) and (e) are views showing an example in which a mask layer is provided. Fig. 10 (a) and (b) are views showing an example in which layers having a coil pattern are different. U(a) and (b) are diagrams showing examples in which the layers of the coil pattern are different. Fig. 00 is a view showing a multilayer wafer type band pass filter element according to an embodiment of the electronic component of the present invention. The figure shows a diagram of the equivalent circuit of the multilayer crystal # M m (4). Fig. is a diagram showing an example of the frequency characteristics of the multilayer wafer (4) $u_(4) shown in Fig. 12. Figs. 15(a) to 15(d) are views showing a multilayer wafer type flat resonator element according to a third embodiment of the electronic component of the present invention. Figure 16 is a diagram showing the equivalent electric power of the Figure 1 $·· + + 夕 。. The layer wafer type slat component diagram. The frequency characteristics of the multi-layer wafer type oscillating element shown in Fig. Fig. 18 (4) and (b) are diagrams showing an example of the frequency characteristics of the multi-layer wafer type flat plate vibrating 7L shown in Fig. 15. Fig. 19U), _ shows the deformation of the vibrator pattern Fig. 20(a) to Fig. 20(4) are diagrams showing a modification of the resonator pattern. Fig. 21 is a view showing a modification of the (four) oscillator pattern. Fig. 22 (a) and (b) show the present invention. FIG. 24 is a diagram showing an embodiment of an electronic component according to a fourth embodiment of the present invention. FIG. 24 is an electronic component of the present invention. Fig. 25 is a view showing an example of the relationship between the number of turns of the non-spiral type turns and the inductance. Fig. 26 shows the relationship between the number of turns of the non-helical type coil and the Q value. - Figure 27 (4) - (J) shows a multilayer wafer type band pass filter of the electronic device of the present invention. Figure 28 is a diagram showing an equivalent circuit of the multilayer wafer type band pass filter element shown in Fig. 27. Fig. 29 (a) (c) showing the multilayer wafer type tape shown in Fig. 27. Fig. 30 (a) and (b) are views showing a modification of the coil pattern. Fig. 3 (a) to (c) are for explaining the arrangement of the magnetic body on the multilayer substrate. Fig. 32 is a view showing an equivalent circuit of a multilayer wafer type band pass filter element according to an eighth embodiment of the electronic component of the present invention. Fig. 33 (a) to (c) are views showing Fig. 32. Fig. 34 (a) to (c) are diagrams showing a multilayer wafer type band pass filter element according to a ninth embodiment of the electronic component of the present invention. 35(a) and (b) are views showing a modification of the magnetic resin layer provided on the multilayer substrate. Fig. 36 (a) and (b) show changes in the magnetic resin layer provided on the multilayer substrate. 46 201206062 Fig. 37 (a) and (b) are views showing a modification of the magnetic resin layer provided on the multilayer substrate. Fig. 38 (a) (b) shows Fig. 39 (a) and (b) are views showing a modification of the magnetic resin layer provided on the multilayer substrate. Fig. 40 (a) and (b) are diagrams. A diagram showing a laminated filter of an example of a conventional electronic component. [Description of main component symbols] 1,1 a multilayer wafer type resonator component (electronic component) 2, 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 multilayer substrates 20a, 20d, 20e, 20f, 120a, 122a, 420a, 421a, 422a 520a 520b, 520e, 520f, 620a, 620b, 720a, 720bs 820a, 820b 920a 920b, 1020a, 1020b Pattern 3, 103, 203, 303, 503, 603, 603a, 703, 803, 9〇3j 1〇〇3 Magnetic resin layer 4, 204, 504a, 504b, 604a, 604b Resonator circuit (spectral pattern) 5, 5a, 705, 805, 905 Mask layer 100, 500, 600 Multi-layer wafer type band-pass filter element (electronic parts) 200 Multi-layer wafer type plate resonator element (electronic parts) 220a~220i Resonator pattern 201206062 Electronic parts 300, 400, 700, 800, 900, 1000 610, 810, 1010 Cavity 48

Claims (1)

201206062 七、申請專利範圍： ι_一種電子零件，具備： 多層基板，將積層後陶竟坯片燒成而形成 磁性體樹脂層，係設在該多層基板之至少 2. 如申請專利範圍第1項之電子零件，其進 成線圈之線圈圖案。 3. 如申請專利範圍第2項之電子零件，其中 案係在該多層基板之積層方向形成為螺旋狀。 4·如申請專利範圍第2項之電子零件，其中 案係以與該磁性體樹脂層接觸之方式設置。 5. 如申請專利範圍第3項之電子零件，其中 案係以與該磁性體樹脂層接觸之方式設置。 6. 如申請專利範圍第2項之電子零件，其中 案之至少一部分係設在該磁性體樹脂層之内部 7 ·如申請專利範圍第3項之電子零件，其中 案之至少一部分係設在該磁性體樹脂層之内部 8.如申請專利範圍第2項之電子零件，其進 在與該多層基板相反側之該磁性體樹脂層之主 層； 該金屬膜層係以俯視時與該線圈圖案之至 疊之方式設置。 9·如申請專利範圍第3項之電子零件，其進 在與該多層基板相反側之該磁性體樹脂層之主 層； ;以及 一主面。 一步具備形 f，該線圈圖 f，該線圈圖 ' >該線圈圖 '，該線圈圖 〇 '，該線圈圖 〇 一步具備設 面之金屬膜 少一部分重 一步具備設 面之金屬膜 49 201206062 之至少一部分重 該金屬膜層係以俯視時與該線圈圖案 疊之方式設置。 ，其進一步具備 I之主面之金屬 1 〇·如申請專利範圍第4項之電子零件， 設在與該多層基板相反側之該磁性體樹脂舞 膜層； 該金屬膜層係以俯視時與該線圈圖案之至少一部八 疊之方式設置。 77 1 1.如申請專利範圍第5項之電子零件，其進一步具備 設在與該多層基板相反側之該磁性體樹脂層之主面之金 膜層； 胃 該金屬膜層係以俯視時與該線圈圖案之至少一部分重 疊之方式設置。 12.如申請專利範圍第丨至n項中任一項之電子零件， 其進一步具備形成諧振器之諧振器圖案。 1 3.如申請專利範圍第丨2項之電子零件，其中，作為哕 谐振器圖案，形成具有第丨線圈之第丨諧振器之第1諧振 器圖案 '與形成具有第2線圈之第2諧振器之第2諧振器 圖案，在俯視時係並排設置，該磁性體樹脂層係設在至少 形成該第1線圈之第i線圈圆案與形成該第2線圈之第2 線圈圖案之間。 14.如申請專利範圍第13項之電子零件，其中，配置在 該第1線圈圖案與該第2線圈圖案之間之腔體係設在該多 層基板’在該腔體填充有磁性體樹脂。 1 5.如申請專利範圍第1至11項中任一項之電子零件， 50 201206062 其進一步具備遮罩層，係設在設有該磁性體樹脂層之該多 層基板之主面； 該遮罩層係以圍繞該磁性體樹脂層之方式設置。 如申請專利範圍第12項之，電子零件，其進一步具備 遮罩層係設在設有該磁性體樹脂層之該多層基板之主面； 该遮罩層係以圍繞該磁性體樹脂層之方式設置。 士申明專利範圍第13項之電子零件，其進一步1備 遮罩層，係設在設有該磁性體樹脂層之該多層基板之主面； 該遮罩層係以圍繞該磁性體樹脂層之方式設置。 如曱請專利範圍第 罩層，係設在設有該磁性體樹脂層之該多層基板之主面 該遮罩層係以圍繞該磁性體樹脂層之方式設置。 Α如申請專利範圍第丨至丨丨項中任_項之電子零件 其中，該磁性體樹脂層係藉由透磁率不同之複數層形成。 2〇.如申請專利範圍第12項之電子零件，其中，該❹ 體樹脂層係藉由透磁率不同之複數層形成。 21. 如申請專利範圍第13項之電子零件 體樹脂層係藉由透磁率不同之複數層形成。 22. 如申請專利範圍第14項之電子零件 體樹脂層係藉由透磁率不同之複數層形成。 23. 如申請專利範圍帛15$之電子零件 體樹脂層係藉由透磁率不同之複數層形成。 24·如申請專利·範圍第Ιό項之電子零件， 體樹脂層係藉由透磁率不同之複數層形成。 遮 其中，該磁<t 其中，該磁 其中，該磁,j 其中’該磁，丨 51 201206062 2 5.如申請專利範圍第17項之電子零件，其中，該磁性 體樹脂層係藉由透磁率不同之複數層形成。 26.如申請專利範圍第1 8項之電子零件，其中，該磁性 體樹脂層係藉由透磁率不同之複數層形成。 八、圖式. (如次頁） 52201206062 VII. Patent application scope: ι_ An electronic component having: a multi-layer substrate, which is formed by firing a laminated green ceramic sheet to form a magnetic resin layer, which is disposed on at least 2. The electronic part of the item, which is a coil pattern of the coil. 3. The electronic component of claim 2, wherein the case is formed in a spiral shape in the lamination direction of the multilayer substrate. 4. The electronic component of claim 2, wherein the case is placed in contact with the magnetic resin layer. 5. The electronic component of claim 3, wherein the case is placed in contact with the magnetic resin layer. 6. The electronic component of claim 2, wherein at least a portion of the case is disposed inside the magnetic resin layer. 7. The electronic component of claim 3, wherein at least a portion of the case is The inside of the magnetic resin layer 8. The electronic component according to claim 2, wherein the main layer of the magnetic resin layer is on the side opposite to the multilayer substrate; the metal film layer is in a plan view and the coil pattern Set to the stack. 9. The electronic component of claim 3, wherein the main layer of the magnetic resin layer on the side opposite to the multilayer substrate; and a main surface. One step has a shape f, the coil diagram f, the coil diagram '> the coil diagram', the coil diagram 〇', the coil diagram has a metal film with a face-to-face portion and a metal film 49 with a surface set. At least a portion of 201206062 is placed such that the metal film layer is stacked in a plan view with the coil pattern. Further, the metal of the main surface of the first surface of the metal material of the first aspect of the present invention is provided on the opposite side of the multilayer substrate, and the metal film layer is formed in a plan view. At least one of the coil patterns is arranged in an eight-fold manner. The electronic component according to claim 5, further comprising a gold film layer provided on a main surface of the magnetic resin layer on a side opposite to the multilayer substrate; the metal film layer in a plan view At least a portion of the coil pattern is disposed in such a manner as to overlap. 12. The electronic component of any one of clauses 1-5, further comprising a resonator pattern forming a resonator. [1] The electronic component of claim 2, wherein the first resonator pattern 'the second resonator having the second coil is formed as the second resonator pattern as the second resonator pattern The second resonator pattern of the device is arranged side by side in plan view, and the magnetic resin layer is provided between at least the ith coil case in which the first coil is formed and the second coil pattern in which the second coil is formed. The electronic component according to claim 13, wherein a cavity system disposed between the first coil pattern and the second coil pattern is provided on the multi-layer substrate, and the cavity is filled with a magnetic resin. The electronic component according to any one of claims 1 to 11, further comprising a mask layer disposed on a main surface of the multilayer substrate provided with the magnetic resin layer; the mask The layer is provided in such a manner as to surround the magnetic resin layer. According to claim 12, the electronic component further includes a mask layer disposed on a main surface of the multilayer substrate provided with the magnetic resin layer; the mask layer is formed to surround the magnetic resin layer Settings. The electronic component of claim 13 of the patent specification, further comprising a mask layer disposed on a main surface of the multilayer substrate provided with the magnetic resin layer; the mask layer surrounding the magnetic resin layer Mode setting. For example, the first cover layer of the patent range is provided on the main surface of the multilayer substrate provided with the magnetic resin layer. The mask layer is provided to surround the magnetic resin layer. For example, the electronic component of any of the above-mentioned patents, wherein the magnetic resin layer is formed by a plurality of layers having different magnetic permeability. 2. The electronic component of claim 12, wherein the ruthenium resin layer is formed by a plurality of layers having different magnetic permeability. 21. The electronic component body resin layer of claim 13 is formed by a plurality of layers having different magnetic permeability. 22. The electronic component body resin layer of claim 14 is formed by a plurality of layers having different magnetic permeability. 23. If the electronic component body resin layer of the patent application range 帛15$ is formed by a plurality of layers having different magnetic permeability. 24. The electronic component according to the scope of the patent application, wherein the bulk resin layer is formed by a plurality of layers having different magnetic permeability. Covering, the magnetic <t where the magnetic is, the magnetic, j wherein 'the magnetic, 丨 51 201206062 2 5. The electronic component of claim 17 of the patent scope, wherein the magnetic resin layer is A plurality of layers having different magnetic permeability are formed. 26. The electronic component of claim 18, wherein the magnetic resin layer is formed by a plurality of layers having different magnetic permeability. Eight, schema. (such as the next page) 52
TW100102250A 2010-02-18 2011-01-21 Electronic component TW201206062A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010033324 2010-02-18
JP2010136942 2010-06-16

Publications (1)

Publication Number Publication Date
TW201206062A true TW201206062A (en) 2012-02-01

Family

ID=44482696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102250A TW201206062A (en) 2010-02-18 2011-01-21 Electronic component

Country Status (2)

Country Link
TW (1) TW201206062A (en)
WO (1) WO2011102088A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0344905A (en) * 1989-07-13 1991-02-26 Matsushita Electric Ind Co Ltd inductance element
JPH0327013U (en) * 1989-07-27 1991-03-19
JPH06325939A (en) * 1993-05-13 1994-11-25 Murata Mfg Co Ltd Inductor
JP2990652B2 (en) * 1996-03-22 1999-12-13 株式会社村田製作所 Stacked balun transformer
JP3423569B2 (en) * 1997-02-28 2003-07-07 太陽誘電株式会社 Multilayer electronic component and its characteristic adjustment method
JP2003209331A (en) * 2002-01-17 2003-07-25 Toppan Printing Co Ltd Printed wiring board and method of manufacturing the same
JP5038634B2 (en) * 2006-02-16 2012-10-03 Ｔｄｋ株式会社 Noise filter and noise filter mounting structure

Also Published As

Publication number Publication date
WO2011102088A1 (en) 2011-08-25

Similar Documents

Publication Publication Date Title
KR100580689B1 (en) Inductance element,laminated electronic component, laminated electronic component module and method for producing these element, component and module
CN102479601B (en) Electronic component
CN108987065B (en) Electronic component
CN102187408B (en) Electronic part
KR20150014390A (en) Laminated coil
JP7111060B2 (en) Laminated coil parts
JP6460328B2 (en) LC composite parts
JP7131485B2 (en) inductor components
CN111986879B (en) Laminated Coil Parts
CN108461251B (en) Electronic component
JP2022177176A (en) Laminated coil component
JP2002190410A (en) Laminated transformer
JP6380717B2 (en) LC filter and method of manufacturing LC filter
CN104221103A (en) Laminated element and method for manufacturing same
JP7259545B2 (en) Laminated coil parts
JP7215326B2 (en) Laminated coil parts
JP7306541B2 (en) bias tee circuit
TW201206062A (en) Electronic component
JP7501551B2 (en) Manufacturing method of coil parts
KR20150042169A (en) Multilayer type inductor and method of manufacturing the same
JP7322833B2 (en) common mode choke coil
JPH11162737A (en) Laminated chip electronic part
JP7127610B2 (en) Laminated coil parts
JP5295027B2 (en) Multilayer dielectric filter
JP2004128153A (en) Laminated electronic part, laminated electronic part module and manufacturing method therefor