201205804 六、發明說明： 【發明所屬之技術領威】 剛本發明涉及-種半導㈣構，尤P及—種複合式基板 、具有該複合式基板的i化鎵基元件以及採用該複合式 基板的氮化鎵基元件的製造方法。 【先前技術】 [0002]氮化鎵是直接躍遷型半導體，其用途廣泛，可被用於太 陽能電池、發光二極體、半導體雷射器等中。201205804 VI. Description of the Invention: [Technical Leading Technology of the Invention] The present invention relates to a semi-conductive (four) structure, a P-type composite substrate, a gallium-based element having the composite substrate, and the composite type A method of manufacturing a gallium nitride based device of a substrate. [Prior Art] [0002] Gallium nitride is a direct transition type semiconductor, and is widely used in solar cells, light emitting diodes, semiconductor lasers, and the like.
〇 [0003] 目前主流的氮化鎵結構層製造方法是採用藍寶石作為成 長基板，但藍寶石基板散熱性不德’因此’石夕基板現在 開始被越來越多的用作氮化鎵結媾詹成長基板。然而， 請參閱圖3 ’由於矽基板與氤化鎵的熱膨脹係數相差較大 ，在矽基板上成長氤化鎵結構層過程中又需要較高溫度 ，這導致在後續冷卻過程中，氮彳b鎵結構層的收縮率大 大超過碎基板的收縮率，從而會，造成.fr*化嫁結構層出現 崩裂的現象。 一 - 【發明内容】 [0004] 有鑒於此，有必要提供一種能夠避免或減少氮化鎵結構 層崩裂的複合式基板、具有該複合式基板的氮化鎵基元 件以及採用忒複合式基板的氮化鎵基元件的製造方法。 [0005] 一種複合式基板’其包括碎基板及填充物。财基板具 有-第一表面及一與所述第一表面相對的第二表面所 述碎基板的第—表面上形成有複數凹槽。所述填充物填 充在所述凹槽巾’所述魅物的_脹餘大於所逮發 基板的熱膨脹係數。 099125152 表單編號A0101 第3頁/共12頁 0992044187-0 201205804 [0006] 一種氮化鎵基元件，其包括複合式基板及氮化鎵結構層 。所述複合式基板包括石夕基板及填充物。該石夕基板具有 一第一表面及一與所述第一表面相對的第二表面，所述 矽基板的第一表面上形成有複數凹槽。所述填充物填充 在所述凹槽中’所述填充物的熱膨脹係數大於所述石夕基 板的熱膨脹係數。所述氮化鎵結構層形成在所述發基板 的第二表面上。 [〇〇〇7]—種氮化鎵基元件的製造方法，包括以下步驟：提供一 石夕基板’該矽基板具有一第一表面及一與所述第一表面 f. 相對的第二表面，所述矽基板的第一表面上形成有複數 凹槽；在所述複數凹槽内填充填充物，該填充物的熱膨 脹係數大於矽基板的熱膨脹係激卜；及在所述矽基板的第 二表面上形成氮化鎵結構層。 [0008] 本發明實施方式提供的氮化鎵基元件及其製造方法中， 在矽基板的第一表面上形成有複數凹槽，通過在該複數 ... .. 凹槽中填充熱膨脹係數大於矽基板的熱膨脹係數的填充 物’當整個複合式基板被加熱時，矽基板會由於受到填 4 充物膨脹的擠壓，而具有一個較大的熱膨脹率，從而減 小石夕基板與氮化鎵結構層之間的熱膨脹率差異，在氮化 鎵基元件冷卻的過程中，避免或減少氮化鎵結構層崩裂 的現象。 【實施方式】 [0009]以下將結合附圖對本發明作進一步的詳細說明。 請參閱圖1 ’本發明實施方式提供的一種氮化鎵基元件 100包括：複合式基板10及氮化鎵結構層20。所述氮化鎵 099125152 表單編號A0101 第4頁/共12頁 0992044187-0 [0010] 201205804 基元件100可為太陽能電池、發光二極體或半導體雷射器 等。 [0011] 所述複合式基板10包括一石夕基板11及填充物12。所述石夕 基板11具有一第一表面111及一與所述第一表面1丨1相對 的第二表面112。所述第一表面111上形成有複數凹槽 111a。 [0012] 〇 所述填充物12填充於所述複數凹槽llla中，該填充物12 的熱膨脹係數大於矽基板11的熱膨脹係數。由於填充物 12的熱膨脹係數大於矽基板11的熱膨脹係數，當整個複 合式基板10被加熱時’梦基板11會由於受到填充物1 2膨 脹的擠壓，而具有一個較大的熱膨脹率。為了使得梦基 板11各位置受力均勻，可將所述複數凹槽111 &均勻設置 在石夕基板11的第一表面111上，且各凹槽111 a的深度相 同。所述凹槽11 la的深度可設置為介於蛉基板1]L的厚度 的二分之一至三分之一之間，以讓填充物12能夠對石夕基 板11提供一個充分大的播壓力。 〇 [0013] 為避免填充物12的熱膨脹係數太大導致矽基板丨丨嚴重變 形或被損壞，優選地，所述填充物12的熱膨脹係數大於 石夕基板11.的熱膨脹係數且小於氮化鎵的熱膨脹係數。所 述填充物12可選自三氧化二鋁（A1203 )、碳化梦（SiC )、氮化鋁（A1N)、氮化銦（InN)、氮化鎮（MgN) 、氧化鋅（ZnO)、砷化鎵（GaAs)、磷化鎵（Gap)、 鍺（Ge)等中之一種或幾種之混合》 [0014] 所述氣化鎵結構層20形成在所述石夕基板11的第二表面112 099125152 表單編號A0101 第5頁/共12頁 0992044187-0 201205804 [0015] [0016] [0017] [0018] [0019] ”體的’忒氮化鎵結構層20可採用金屬有機化學氣 積法（MOCVD)生長在所述石夕基板n的第二表面112上 〇 “閱圖2 ’本發明實施方式還提供了 -種氮化鎵基元件 1〇0的製造方法’該製造方法包括以下步驟： 提供發基板11。該♦基板u具有第一表面U1及與所述 第—表面111相對的第二表面112。所述第一表面111上 形成有複數凹槽11 la。 在所述複數凹槽llla内填充填充粉12。該填充物12的熱 膨脹係數大於矽基板u的熱膨脹係數 。所述填充物12可 才木用蒸鍍、接合、長晶 '濺鍍、離子佈置、原子層沉積(Atomic Layer Deposition, ALD)或金屬有機化學氣 相沉積法形成在所述複數凹槽1113内。 在所述矽基板11的第二表面112上形成氮化鎵結構層20。 所述氮化鎵結構層20可採用金屬有機花學氣相沉積等方 法生長在所述矽基板11的第二表面112上。 本發明實施方式提供的氮化鎵基元件及其製造方法中， 在石夕基板的第一表面上形成有複數凹槽，通過在該複數 凹槽中填充熱膨脹係數大於矽基板的熱膨脹係數的填充 物’當整個複合式基板被加熱時，矽基板會由於受到填 充物膨脹的擠壓，而具有一個較大的熱膨脹率，從而減 小石夕基板與氮化鎵結構層之間的熱膨脹率差異，在氮化 鎵基元件冷卻的過程中，避免或減少氮化鎵結構層崩裂 的現象。 099125152 表單編號A0101 第6頁/共12頁 0992044187-0 201205804 [0020] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0021] 圖1是本發明實施方式提供的一種氮化鎵基元件結構示意 圖。 〇〇[0003] At present, the mainstream manufacturing method of GaN structural layer is to use sapphire as the growth substrate, but the sapphire substrate is not good in heat dissipation. Therefore, the Shixi substrate is now being used more and more as a GaN junction. Growing the substrate. However, please refer to FIG. 3 'Because the difference between the thermal expansion coefficients of the tantalum substrate and the gallium antimonide is large, a higher temperature is required in the process of growing the gallium antimonide structural layer on the tantalum substrate, which leads to nitrogen b) in the subsequent cooling process. The shrinkage rate of the gallium structure layer greatly exceeds the shrinkage rate of the broken substrate, which may cause the crack of the .fr* married structure layer. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a composite substrate capable of avoiding or reducing chipping of a gallium nitride structural layer, a gallium nitride based device having the composite substrate, and a composite substrate using a germanium composite substrate. A method of manufacturing a gallium nitride based device. A composite substrate 'which includes a broken substrate and a filler. The financial substrate has a first surface and a second surface opposite to the first surface. The first surface of the fragmented substrate is formed with a plurality of grooves. The filler is filled in the grooved towel. The swell of the charm is greater than the coefficient of thermal expansion of the captured substrate. 099125152 Form No. A0101 Page 3 of 12 0992044187-0 201205804 [0006] A gallium nitride based device comprising a composite substrate and a gallium nitride structural layer. The composite substrate includes a stone substrate and a filler. The stone substrate has a first surface and a second surface opposite to the first surface, and the first surface of the substrate is formed with a plurality of grooves. The filler is filled in the groove. The coefficient of thermal expansion of the filler is greater than the coefficient of thermal expansion of the stone substrate. The gallium nitride structural layer is formed on the second surface of the hair substrate. [〇〇〇7] A method for manufacturing a gallium nitride-based device, comprising the steps of: providing a substrate having a first surface and a second surface opposite to the first surface f. Forming a plurality of grooves on the first surface of the ruthenium substrate; filling the plurality of grooves with a filler having a coefficient of thermal expansion greater than a thermal expansion coefficient of the ruthenium substrate; and a second layer on the ruthenium substrate A gallium nitride structural layer is formed on the surface. In a gallium nitride-based device and a method of fabricating the same according to the embodiments of the present invention, a plurality of grooves are formed on a first surface of a ruthenium substrate, and a coefficient of thermal expansion is filled in the plurality of grooves. Filler of the coefficient of thermal expansion of the ruthenium substrate' When the entire composite substrate is heated, the ruthenium substrate will have a large thermal expansion rate due to the extrusion of the filled filler, thereby reducing the Shixi substrate and gallium nitride. The difference in thermal expansion rate between the structural layers prevents or reduces the collapse of the gallium nitride structural layer during the cooling of the gallium nitride based device. [Embodiment] The present invention will be further described in detail below with reference to the accompanying drawings. Referring to FIG. 1 , a gallium nitride based device 100 provided by an embodiment of the present invention includes a composite substrate 10 and a gallium nitride structural layer 20 . The gallium nitride 099125152 Form No. A0101 Page 4 / Total 12 pages 0992044187-0 [0010] 201205804 The base element 100 may be a solar cell, a light emitting diode or a semiconductor laser or the like. [0011] The composite substrate 10 includes a stone substrate 11 and a filler 12. The stone substrate 11 has a first surface 111 and a second surface 112 opposite to the first surface 丨1. A plurality of grooves 111a are formed on the first surface 111. [0012] The filler 12 is filled in the plurality of grooves 111a, and the coefficient of thermal expansion of the filler 12 is larger than the coefficient of thermal expansion of the crucible substrate 11. Since the coefficient of thermal expansion of the filler 12 is larger than the coefficient of thermal expansion of the crucible substrate 11, when the entire composite substrate 10 is heated, the dream substrate 11 has a large coefficient of thermal expansion due to the expansion by the expansion of the filler 12. In order to make the position of the dream substrate 11 uniform, the plurality of grooves 111 & can be uniformly disposed on the first surface 111 of the stone substrate 11, and the depths of the grooves 111 a are the same. The depth of the groove 11 la may be set to be between one-half and one-third of the thickness of the 蛉 substrate 1]L, so that the filler 12 can provide a sufficiently large broadcast to the Shishi substrate 11. pressure. [0013] In order to prevent the thermal expansion coefficient of the filler 12 from being too large, the crucible substrate is severely deformed or damaged. Preferably, the thermal expansion coefficient of the filler 12 is greater than the thermal expansion coefficient of the Shishi substrate 11. The coefficient of thermal expansion. The filler 12 may be selected from the group consisting of aluminum oxide (A1203), carbonized dream (SiC), aluminum nitride (A1N), indium nitride (InN), nitrided (MgN), zinc oxide (ZnO), arsenic. Mixing one or more of gallium (GaAs), gallium phosphide (Gap), germanium (Ge), etc. [0014] The gallium carbide structural layer 20 is formed on the second surface of the stone substrate 11 112 099125152 Form No. A0101 Page 5 / Total 12 Page 0992044187-0 201205804 [0019] [0019] [0019] The "body" 忒 gallium nitride structural layer 20 can be metal organic chemical gas accumulation method (MOCVD) is grown on the second surface 112 of the slab substrate n. "FIG. 2" The embodiment of the present invention further provides a method for manufacturing a gallium nitride-based device 1 〇 0. The manufacturing method includes the following steps : The substrate 11 is provided. The substrate u has a first surface U1 and a second surface 112 opposite to the first surface 111. A plurality of grooves 11 la are formed on the first surface 111. The filling powder 12 is filled in the plurality of grooves 1111. The filler 12 has a coefficient of thermal expansion greater than that of the ruthenium substrate u. The filler 12 may be formed in the plurality of grooves 1113 by vapor deposition, bonding, growth, sputtering, ion implantation, atomic layer deposition (ALD) or metal organic chemical vapor deposition. . A gallium nitride structural layer 20 is formed on the second surface 112 of the germanium substrate 11. The gallium nitride structural layer 20 may be grown on the second surface 112 of the tantalum substrate 11 by a method such as metal organic floral vapor deposition. In the gallium nitride-based device and the method for fabricating the same according to the embodiments of the present invention, a plurality of grooves are formed on a first surface of the substrate, and the filling of the plurality of grooves is filled with a coefficient of thermal expansion greater than a coefficient of thermal expansion of the substrate. When the entire composite substrate is heated, the ruthenium substrate will have a large thermal expansion rate due to the expansion of the filler, thereby reducing the difference in thermal expansion between the shishan substrate and the gallium nitride structural layer. In the process of cooling the gallium nitride based component, the phenomenon of cracking of the gallium nitride structural layer is avoided or reduced. 099125152 Form No. A0101 Page 6 of 12 0992044187-0 201205804 [0020] Further, those skilled in the art can make other changes within the spirit of the present invention. Of course, these changes according to the spirit of the present invention should include It is within the scope of the claimed invention. BRIEF DESCRIPTION OF THE DRAWINGS [0021] FIG. 1 is a schematic view showing the structure of a gallium nitride based device according to an embodiment of the present invention. 〇
[0022] [0023] [0024] [0025] [0026] [0027] [0028] [0029] [0030] [0031] 圖2是本發明實施方式提供的一種氮化鎵基元件的製造方 法示意圖。 圖3是發、氮化鎵等材料的熱秦脹係數關係圖。 【主要元件符號說明】 氮化鎵基元件：100 複合式基板：10 矽基板：11[0023] FIG. 2 is a schematic diagram of a method of fabricating a gallium nitride based device according to an embodiment of the present invention. [0031] FIG. Figure 3 is a graph showing the thermal expansion coefficient of materials such as hair and gallium nitride. [Main component symbol description] Gallium nitride based component: 100 Composite substrate: 10 矽 Substrate: 11
填充物：12 氮化鎵結構層：2〇 第一表面：111 凹槽：111 a 第二表面：112Filler: 12 Gallium nitride structure layer: 2〇 First surface: 111 Groove: 111 a Second surface: 112
099125152 表單煸號A0101 第 頁/共12頁 0992044187-0099125152 Form nickname A0101 Page / Total 12 0992044187-0