201205676 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種薄膜太陽能電池的退火裝置，尤其關 於一種減少CIGS薄膜太陽能電池中之硒元素蒸發的薄膜太 陽能電池的退火裝置。 【先前技術】 薄膜太 1% 能電池中 CIGS ( copper indium gallium (di)Selenide)是屬於化合物半導體。CIGS屬於多晶薄膜的形 式，它是由銅、銦、鎵以及砸所組成的一三五族化合物半導 體材料。圖1A顯示CIGS薄膜太陽能電池製造過程之一步 驟的示意圖。圖1B顯示CIGS薄膜太陽能電池製造過程之一 步驟的示意圖。如圖1A所示，CIGS薄膜太陽能電池1〇包 含一玻璃基板11。於玻璃基板11上依序沉積鉬金屬層12、 銅鎵金屬層13、銦金屬層14及硒層15。如圖1B所示，對 圖1A步驟的CIGS薄膜太陽能電池10,進行退火(anneaiing) 處理，退火主要是指一種使材料曝露於高溫一段時間後，然 後再慢慢冷卻的製程，退火處理後，銅鎵金屬層13、銦金屬 層14及砸層15會形成一 CIGSe金屬層16。 201205676 圖2A顯示一習知薄膜太陽能電池的退火裝置之外部結 構的示意圖1知薄膜太陽能電池的退火裝置2〇，包含互相° 連通的5個退火室21〜25、及2個儲存室31〜32。進行退火 處理時’退火裝置20的-傳送裝置（未圖示），會從退火裳 置20的入口 35將圖1A步驟的CIGS薄膜太陽能電池川， 送入至退火室21進行麵，再藉由傳送裝置送至退火室22 快速加熱至高溫狀態，例如5〇(Tc〜6〇〇°c。於退火室23及 24中使CIGS薄膜太陽能電池1Q保持在高溫雜下一段時 間。在退火室25中使CIGS薄膜太陽能電池1〇預先降溫， 最後再使CIGS薄膜太陽能電池10於儲存室31〜32中緩慢降 溫至低溫狀態後，從出口 36送出。圖2B顯示一習知薄膜太 陽能電池的退火裝置之各退火室之内部結構的示意圖。如圖 2B所示，退火室21連通於一排氣管33，且於其内設有一底 板26，CIGS薄膜太陽能電池10靜置於底板26上。一加熱 器50隔著一石墨板6〇對CIGS薄膜太陽能電池1〇進行加 熱。加熱器50包含有多個長條狀的加熱管51。 然而，習知退火裝置20所形成的CIGS薄膜太陽能電 池10a，其品質及良率尚具有改善空間。因此，需要一種品 質或良率高於習知退火裝置20的CIGS薄膜太陽能電池的退 火裝置。 201205676 【發明内容】 本發明一實施例之目的在於提供一種減少CIGS薄膜太 陽旎電池中之砸元素蒸發的薄膜太陽能電池的退火裝置。 依據本發明一實施例，提供一種薄膜太陽能電池退火裝 置，其適於對一薄膜太陽能電池進行退火製程，薄膜太陽能 電池退火裝置包含至少-退火室、—外罩及—加熱器。退火 室包含一底板，外罩設於退火室，加熱器設於退火室内，用 以對薄膜太陽能電池加熱。於加熱||對_太陽能電池的加 熱程序中’外罩與絲界定—賴㈣，薄敝陽能電池置 於密閉空間内。 於-實施例中’外罩包含-頂板及多個側翼板，該些側 翼板自頂板的邊緣向底板延伸。較佳的情況是，於加熱器對 薄膜太陽能電池的加熱程序巾，該些側翼板抵#底板，藉以 形成密閉空間。 於一實施例中，加熱器包含多個加熱管用以對薄膜太陽 能電池加熱，且於加熱器對薄膜太陽能電池的加熱程序中， 該些加熱管制地鶴，藉錢該些加鮮姉薄膜鴻能 電池移動。較佳的情況是該些加熱管進行往復運動。 於-實施例中，加熱器包含多個加熱管及一導熱板該 些加熱管為長條狀誠對薄膜太陽能電池加熱，導熱板為平 201205676 面狀且叹於外罩無些加鮮間，且導熱㈣導熱係數大於 外罩的導熱係數。 ;貫施例中’力〇熱器包含—加熱板係為平面狀，藉以 形成平面的熱源。 依據本發明-貫施例，當薄膜太陽能電池退火裝置的傳 运裝置處於靜止狀態，且加對靜置於退火室的底板上之 CIGS薄社陽能電池加熱時，外罩與底板間形成密閉空間， 使CIGS薄膜太陽能電池中的晒元素被蒸發後無法離開此密 閉空間，關減少CIGS賴太陽能電池元素被_ 的量，進而增加退火處理後之CIGS薄膜太陽能電池的品質 及良率。 本發明的其他目的和優點可以從本發明所揭露的技術 特徵中得到進-步的了解。為讓本發明之上述和其他目的、 特徵和優點㉟更明顯易十董’下文特舉實施例並配合所附圖 式，作詳細說明如下。 【實施方式】 圖3A顯示依本發明一實施例薄膜太陽能電池退火裝置 之一狀態下的示意圖。圖3B顯示依本發明一實施例薄膜太 陽能電池退火裝置之另一狀態下的示意圖。如圖3A所示， 薄膜太陽能電池退火裝置100用以對一 CIGS薄膜太陽能電 201205676 池ίο進行退火製程，其包含至少一退火室、一加熱器i3〇、 一底板26、一外罩140及一傳送裝置（未圖示）。於本實施 例中，薄臈太陽能電池退火裝置100設有5個退火室。〜^ (請參照圖2A)。以下以退火室21為例示加以說明，其餘 退火室22〜25相同於退火室2卜因此省略其相關說明。 步驟S02 :當傳送裝置要將CIGS薄膜太陽能電池ι〇傳 送至退火室21内時，外罩14G往遠離底板％的方向移動， 以便於將CIGS薄膜太陽能電池10置於底板％上。 步驟S〇4 :外罩M0再往底板26的方向移動並抵靠 底板26，於外罩140及底板26間形成一密閉的空間，如圖 3B所示。 步驟S06 :加熱器130隔著外罩14〇對CI(}S薄膜太陽 能電池10進行加熱一預定時間。 步驟s〇8:當傳送裝置要將CIGS薄膜太陽能電池1〇傳 出退火室21外時，外罩140再往遠離底板26的方向移動， 以便於將CIGS薄膜太陽能電池1〇傳出退火室21外。 因此’於退火室21巾，除了傳送CIGS薄膜太陽能電 池10的動作之外，大部分的時間CIGS薄膜太陽能電池1〇 係處於外罩140與底板26所界定的密閉空間内。依據本實 施例，能夠改善經過退火程序後2CIGS薄膜太陽能電池1〇a 的品質及良率’以下將更詳細說明其原因。 201205676 CIGS薄膜太陽能電池10中含有栖元素，於高溫的退火 室中會被蒸發，砸元素的蒸氣具有腐蝕性且係為有毒物質， 由於習知退火裝置20的退火室21〜25及儲存室31〜32互相 連通，硒元素的蒸氣容易從入口 35及出口 36散出。因此， 請再次參照圖2B，一般習知退火裝置2〇包含有一排氣管33 連通於退火室21，使退火室21内形成負壓，而能夠將退火 室21中的硒蒸氣透過排氣管33排出於退火室21之外，並 加以收集，以避免硒元素的蒸氣洩漏於周圍環境中。然而， 由於退火室21處於高溫狀態，且袖取退火室21中的砸蒸氣 後，退火室21内的硒蒸氣含量會減少，CIGS薄膜太陽能電 池ίο中的硒元素更容易蒸發至退火室21的空間，造成CIGS 薄膜太陽能電池10的硒元素的含量減少，因此依據習知退 火裝置20的技術，降低了 CIGS薄膜太陽能電池1〇的品質 及良率。此外，由於退火室21持續處於負壓狀態，抽取更 多的硒蒸氣，隨後尚需要負擔處理該些硒蒸氣的成本，因此 製造成本較高。 相較於此，由於在傳輸裝置的靜止狀態，退火室21對 CIGS薄膜太陽能電池1〇進行加熱處理時，使aGS薄膜太 陽月b电池1〇於外罩14〇與底板％所界定的密閉空間内加 熱。雖然CIGS薄膜太陽能電池1〇中的硒元素還是會因退火 至21處於咼溫狀態而被蒸發，但因為被蒸發後的硒會留在 201205676 此密閉空間内’硒的蒸氣壓會升高，因而減少了 CIGS薄膜 太陽能電池10中的砸元素被蒸發的量。藉此，減少CIGS薄 膜太陽能電池10中的硒元素的流失，增加CIGS薄膜太陽能 電池10的品質及含量。尚且，由於被抽取之栖蒸氣的量已 降低’而能夠減少後續處理砸蒸氣的成本。 外罩140的形狀及材質不加以限定，但由於硒元素的蒸 氣具有腐蝕性，因此較佳的情況是採用石墨。於本實施例 中’外罩140包含一頂板141及多個側翼板M2。該些側翼 板142自頂板141的邊緣朝底板26的方向延伸。 加熱器130包含多個長條狀的加熱管13卜由於加熱管 111為長條狀’而CIGS薄膜太陽能電池1〇的玻璃基板u 為面狀’因而造成靠近加熱管111之玻璃基板u的部分受熱 較多，而遠離加熱管111之玻璃基板n的部分受熱較少，產 生受熱不均的現象，進而影響CIGSe金屬層16内各金屬的 結晶、濃度等物理特徵不均勻。如此，亦會造成Cigs薄膜 太陽能電池l〇a之品質及良率的下降。於本實施例中，外罩 140的頂板141位於加熱器130與CIGS薄膜太陽能電池1〇 間。於退火過程中，由於加熱器13〇的該些加熱管131先對 外罩140的頂板141加熱，外罩140的頂板141能夠預先均 勻化該些加熱管131的熱，形成面的熱源，再對CIGS薄膜 太陽能電池10加熱。因此外罩14〇的頂板141能夠更進一 201205676 步改善受熱不均的現象。此外，因加熱器13〇與CIGS薄膜 太陽能電池10間隔著頂板141 ’還能夠有保護加熱器丨3〇的 作用’以避免硒腐蝕加熱器130。 於一實施例中，加熱器130更包含有一驅動裝置133及 一固定裝置132。驅動裝置133可以為一引導軌道。固定裝 置132可移動地設於驅動裝置133。加熱管131固定於固定 裝置132 ’並隨固定裝置132移動而移動。 在傳送裝置的靜止狀態時’ CIGS薄膜太陽能電池10靜 置於退火室21的底板26 ,此時驅動裝置驅動（被固定 於固疋裝置132的）加熱管131相對薄膜太陽能電池1〇移 動。由於加熱管131持續地相對薄膜太陽能電池1〇移動， 因此此夠使薄膜太陽能電池1〇較均勻地受熱。於本實施例 中，使該些加熱管131進行往復運動。此外，當加熱管131 於行徑間進行往復運動時，加熱管131在該行徑的兩端點 會有停頓的情況，使得加熱管131在靠近蹄涵兩端點之 部分的時間會大於加熱管131在該行徑之巾關時間，因此 較佳的情況是’使加鮮131在靠近該行徑的端點之部分的 速度大於加熱管131在該行徑之中點之部分的速度。 此外，本發明一實施例之加熱器130不限定於上述結 構。圖4顯不依本發明—實施例雜太陽能電池退火裝置的 示意圖。圖4實施例之退火裝置相似於圖3B實施例之退火 201205676 裝置，因此相同的元件使用相同的符號並省略其相關說明。 如圖4所示，於本實施例中，加熱器130更包含有一導熱板 134。導熱板134係呈面狀且設於該些加熱管131與外罩140 的頂板141之間。由於硒元素的蒸氣具有腐蝕性，因此外罩 140應使用能抗硒腐蝕的材質，例如石墨。然而當使用的材 質導熱係數較差時，即使該些加熱管131隔著外罩140亦無 法使CIGS薄膜太陽能電池1〇平均地受熱。相較於此，於本 實施例中’導熱板134的導熱係數大於頂板141的導熱係 數，藉以使該些加熱管131所產生的熱能夠較平均地分散至 導熱板134的整面上。由於該些加熱管131同時隔著外罩14〇 之頂板141對CIGS薄膜太陽能電池1〇加熱，能夠使其更 平均地受熱。 圖5顯示依本發明另一實施例薄膜太陽能電池退火裝置 的示意圖。圖5實施例之退火裝置相似於圖4實施例之退火 裝置，因此相同的元件使用相同的符號並省略其相關說明。 如圖5所示，於本實施例中，加熱器13〇不使用加熱管，而 採用一加熱板135 ^加熱板135相同於加熱管131能夠產生 熱源，且加熱板135為一平面，因此能夠均勻地對CIGS薄 膜太陽能電池10加熱。 依據本發明-實施例，包含有—外罩14〇，當薄膜太陽 能電池退火裝置⑽的傳送裝置處於靜止㈣，且加熱器13〇 201205676 對靜置於退火室21的底板26上之CIGS薄膜太陽能電池10 加熱時，外罩140與底板26間形成密閉空間，使CIGS薄臈 太陽能電池】0中的硒元素被蒸發後無法離開此密閉空間， 月夠減少CIGS薄膜太陽能電池1〇令的硒元素被蒸發的量， 進而增加CIGS薄獏太陽能電池1〇a的品質及良率。此外， CIGS薄膜太陽能電池1〇巾的石西元素被蒸發的量已減少，因 此薄膜太陽能退火裝置從退火室中所抽取出之 砸元素的里亦隨之減少，因此能夠減少後續處理被抽取出之 涵蒸氣的成本。 雖然本發明已以較佳實施例揭露如上，然其並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和範 圍内，*可作些許之更動朗飾，因此本發明之保護範圍當 視後附之申請專觀_界定者騎。另外，本發明的任— 實施例或申請專利範圍不須達成本發明所揭露之全部目的 或優點或特點。此外，摘要部分和標題僅是_助專利文 件搜寻之用，麟絲_本翻之權利範圍。 201205676 【圖式簡單說明】 圖认顯示CIGS薄膜太陽能電池製造過程之一步驟的 示意圖。 圖m顯示CIGS薄膜太陽能電池製造過程之一步驟的 示意圖。 圖2A顯示-習知薄膜太陽能電池的退火裝置之外部結 構的示意圖。 圖2B顯示-習知薄膜太陽能電池的退火裝置之各退火 室之内部結構的示意圖。 圖3A顯示依本發明_實施例薄膜太陽能電池退火裝置 之一狀態下的示意圖。 圖3B顯示依本發明—實施例薄膜太陽能電池退火裝置 之另一狀態下的示意圖。 圖4顯示依本發明一實施例薄膜太陽能電池退火裝置的 示意圖。 圖5择員示依本發明另一實施例薄膜太陽能電池退火裝置 的示意圖。 201205676 【主要元件符號說明】201205676 VI. Description of the Invention: [Technical Field] The present invention relates to an annealing apparatus for a thin film solar cell, and more particularly to an annealing apparatus for a thin film solar cell which reduces evaporation of selenium in a CIGS thin film solar cell. [Prior Art] CIGS (copper indium gallium (di) Selenide) is a compound semiconductor in a 1% energy battery. CIGS is in the form of a polycrystalline film which is a tri- or tri-group compound semiconductor composed of copper, indium, gallium and germanium. Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. As shown in Fig. 1A, a CIGS thin film solar cell 1A includes a glass substrate 11. A molybdenum metal layer 12, a copper gallium metal layer 13, an indium metal layer 14, and a selenium layer 15 are sequentially deposited on the glass substrate 11. As shown in FIG. 1B, the CIGS thin film solar cell 10 of the step of FIG. 1A is subjected to an anneaiing treatment, and the annealing mainly refers to a process of exposing the material to a high temperature for a period of time and then slowly cooling, after annealing, The copper gallium metal layer 13, the indium metal layer 14, and the germanium layer 15 form a CIGSe metal layer 16. 201205676 FIG. 2A is a schematic view showing the external structure of a conventional thin film solar cell annealing apparatus. The annealing device 2 of the thin film solar cell includes five annealing chambers 21 to 25 and two storage chambers 31 to 32 which are in communication with each other. . When the annealing treatment is performed, the apparatus of the annealing device 20 (not shown) sends the CIGS thin film solar cell of the step of FIG. 1A from the inlet 35 of the annealing skirt 20 to the annealing chamber 21 for surface-by-side processing. The conveying device is sent to the annealing chamber 22 for rapid heating to a high temperature state, for example, 5 Torr (Tc~6 〇〇 °c. The CIGS thin film solar cell 1Q is kept at a high temperature for a period of time in the annealing chambers 23 and 24. In the annealing chamber 25 The CIGS thin film solar cell is cooled in advance, and finally the CIGS thin film solar cell 10 is slowly cooled to a low temperature state in the storage chambers 31 to 32, and then sent out from the outlet 36. Fig. 2B shows a conventional thin film solar cell annealing device A schematic diagram of the internal structure of each annealing chamber. As shown in FIG. 2B, the annealing chamber 21 is connected to an exhaust pipe 33, and a bottom plate 26 is disposed therein, and the CIGS thin film solar cell 10 is placed on the bottom plate 26. The device 50 heats the CIGS thin film solar cell 1 through a graphite plate 6. The heater 50 includes a plurality of elongated heating tubes 51. However, the CIGS thin film solar power formed by the conventional annealing device 20 10a, there is still room for improvement in quality and yield. Therefore, there is a need for an annealing apparatus for a CIGS thin film solar cell having a higher quality or yield than that of the conventional annealing device 20. 201205676 SUMMARY OF THE INVENTION An object of an embodiment of the present invention is to provide An annealing device for a thin film solar cell for reducing evaporation of germanium in a CIGS thin film solar cell. According to an embodiment of the invention, a thin film solar cell annealing device is provided, which is suitable for annealing a thin film solar cell, a thin film solar cell The annealing device comprises at least an annealing chamber, an outer cover and a heater. The annealing chamber comprises a bottom plate, the outer cover is arranged in the annealing chamber, and the heater is arranged in the annealing chamber for heating the thin film solar cell. In the heating process, 'the outer cover and the wire are defined--(4), the thin solar cell is placed in a confined space. In the embodiment, the outer cover comprises a top plate and a plurality of side panels, and the side panels are from the edge of the top plate to the bottom plate. Extending. Preferably, the heating of the thin film solar cell by the heater, the The wing plate abuts the bottom plate to form a sealed space. In one embodiment, the heater includes a plurality of heating tubes for heating the thin film solar cells, and in the heating process of the heater for the thin film solar cells, the heating control cranes The borrowed money is added to the fresh enamel film Hongneng battery to move. Preferably, the heating tubes are reciprocated. In the embodiment, the heater comprises a plurality of heating tubes and a heat conducting plate, and the heating tubes are long. The strip is heated by the thin film solar cell, the heat conducting plate is flat 201205676, and the sigh sighs with no additional space between the outer cover, and the thermal conductivity (four) thermal conductivity is greater than the thermal conductivity of the outer cover. The plate system is planar to form a planar heat source. According to the present invention, when the transport device of the thin film solar cell annealing device is in a stationary state and the CIGS thin solar cell is placed on the bottom plate of the annealing chamber, a closed space is formed between the outer cover and the bottom plate. The sun element in the CIGS thin film solar cell cannot be removed from the sealed space after being evaporated, and the amount of the CIGS solar cell element is reduced, thereby increasing the quality and yield of the CIGS thin film solar cell after annealing. Other objects and advantages of the present invention will be apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the present invention will become more apparent from the following detailed description of the embodiments. [Embodiment] Fig. 3A is a view showing a state of a thin film solar cell annealing apparatus according to an embodiment of the present invention. Fig. 3B is a view showing another state of the film solar cell annealing apparatus according to an embodiment of the present invention. As shown in FIG. 3A, the thin film solar cell annealing apparatus 100 is configured to perform an annealing process on a CIGS thin film solar power 201205676 cell, including at least one annealing chamber, a heater i3, a bottom plate 26, a cover 140, and a transfer. Device (not shown). In the present embodiment, the thin tan solar cell annealing apparatus 100 is provided with five annealing chambers. ~^ (Please refer to Figure 2A). Hereinafter, the annealing chamber 21 will be described as an example, and the remaining annealing chambers 22 to 25 are the same as the annealing chamber 2, and thus the related description will be omitted. Step S02: When the transfer device is to transport the CIGS thin film solar cell ι to the annealing chamber 21, the cover 14G is moved away from the bottom plate % to facilitate placing the CIGS thin film solar cell 10 on the bottom plate %. Step S〇4: The cover M0 moves in the direction of the bottom plate 26 and abuts against the bottom plate 26 to form a sealed space between the outer cover 140 and the bottom plate 26, as shown in Fig. 3B. Step S06: The heater 130 heats the CI(}S thin film solar cell 10 for a predetermined time via the outer cover 14〇. Step s〇8: When the transfer device is to transport the CIGS thin film solar cell 1 out of the annealing chamber 21, The outer cover 140 is further moved away from the bottom plate 26 to facilitate the transfer of the CIGS thin film solar cell 1 out of the annealing chamber 21. Therefore, in the annealing chamber 21, except for the movement of the CIGS thin film solar cell 10, most of the The time CIGS thin film solar cell 1 is in a sealed space defined by the outer cover 140 and the bottom plate 26. According to the embodiment, the quality and yield of the 2CIGS thin film solar cell 1〇a after the annealing process can be improved, which will be described in more detail below. The reason is 201205676 CIGS thin film solar cell 10 contains a living element, which is evaporated in a high temperature annealing chamber, and the vapor of the lanthanum element is corrosive and is toxic, due to the annealing chambers 21 to 25 of the conventional annealing device 20 and The storage chambers 31 to 32 communicate with each other, and the vapor of selenium element is easily dissipated from the inlet 35 and the outlet 36. Therefore, referring again to Fig. 2B, the conventional annealing apparatus 2〇 An exhaust pipe 33 is connected to the annealing chamber 21 to form a negative pressure in the annealing chamber 21, and the selenium vapor in the annealing chamber 21 can be discharged out of the annealing chamber 21 through the exhaust pipe 33 and collected to avoid The vapor of the selenium element leaks into the surrounding environment. However, since the annealing chamber 21 is in a high temperature state, and the enthalpy vapor in the annealing chamber 21 is taken up, the selenium vapor content in the annealing chamber 21 is reduced, and the CIGS thin film solar cell is Selenium element is more likely to evaporate into the space of the annealing chamber 21, resulting in a decrease in the selenium content of the CIGS thin film solar cell 10. Therefore, according to the technique of the conventional annealing device 20, the quality and yield of the CIGS thin film solar cell are reduced. Since the annealing chamber 21 continues to be under a negative pressure state, more selenium vapor is extracted, and then the cost of processing the selenium vapors is still required, so that the manufacturing cost is high. Compared to this, the annealing is performed in the stationary state of the transmission device. When the chamber 21 heats the CIGS thin film solar cell 1 , the aGS film solar moon b battery 1 is placed in the sealed space defined by the outer cover 14 〇 and the bottom plate %. Although the selenium in the CIGS thin-film solar cell is still evaporated due to annealing to 21, it will remain in the closed space of 201205676. The vapor pressure of selenium will increase. Therefore, the amount of strontium element evaporated in the CIGS thin film solar cell 10 is reduced. Thereby, the loss of selenium in the CIGS thin film solar cell 10 is reduced, and the quality and content of the CIGS thin film solar cell 10 are increased. The amount of the invading vapor has been reduced, and the cost of the subsequent treatment of the vapor can be reduced. The shape and material of the outer cover 140 are not limited, but since the vapor of the selenium element is corrosive, graphite is preferably used. In the present embodiment, the outer cover 140 includes a top plate 141 and a plurality of side flaps M2. The side flaps 142 extend from the edge of the top plate 141 toward the bottom plate 26. The heater 130 includes a plurality of elongated heating tubes 13 which are in a strip shape of the heating tube 111 and the glass substrate u of the CIGS thin film solar cell 1 is planar, thereby causing a portion of the glass substrate u adjacent to the heating tube 111. The heat is large, and the portion of the glass substrate n away from the heating tube 111 is less heated, causing uneven heating, which in turn affects the physical characteristics such as crystallinity and concentration of the metals in the CIGSe metal layer 16. In this way, the quality and yield of the Cigs thin film solar cell l〇a will also decrease. In the present embodiment, the top plate 141 of the outer cover 140 is located between the heater 130 and the CIGS thin film solar cell 1 . During the annealing process, since the heating tubes 131 of the heater 13 are heated by the top plate 141 of the outer cover 140, the top plate 141 of the outer cover 140 can pre-homogenize the heat of the heating tubes 131 to form a surface heat source, and then to the CIGS. The thin film solar cell 10 is heated. Therefore, the top plate 141 of the outer cover 14 can further improve the uneven heating phenomenon by the step 201205676. Further, since the heater 13 is spaced apart from the CIGS thin film solar cell 10 by the top plate 141', it is also possible to protect the heater 丨3 以避免 from the selenium corrosion heater 130. In one embodiment, the heater 130 further includes a driving device 133 and a fixing device 132. The driving device 133 can be a guiding track. The fixing device 132 is movably provided to the driving device 133. The heating tube 131 is fixed to the fixing device 132' and moves as the fixing device 132 moves. The CIGS thin film solar cell 10 is placed in the bottom plate 26 of the annealing chamber 21 while the conveyor is in a stationary state, at which time the driving device drives (heated by the fixing device 132) the heating tube 131 to move relative to the thin film solar cell 1 . Since the heating tube 131 is continuously moved relative to the thin film solar cell 1 此, this makes it possible to heat the thin film solar cell 1 〇 more uniformly. In the present embodiment, the heating tubes 131 are reciprocated. In addition, when the heating pipe 131 reciprocates between the running paths, the heating pipe 131 may have a pause at the two ends of the traveling path, so that the time of the heating pipe 131 near the point of the both ends of the hoof and the culvert is greater than the heating pipe 131. At the time of the towel off time, it is preferred that the speed of the portion of the freshening 131 near the end of the path is greater than the speed of the portion of the heating tube 131 at the midpoint of the path. Further, the heater 130 according to an embodiment of the present invention is not limited to the above structure. Figure 4 is a schematic illustration of an embodiment of a hybrid solar cell annealing apparatus in accordance with the present invention. The annealing apparatus of the embodiment of Fig. 4 is similar to the annealing 201205676 apparatus of the embodiment of Fig. 3B, and therefore the same elements are denoted by the same reference numerals and their description will be omitted. As shown in FIG. 4, in the embodiment, the heater 130 further includes a heat conducting plate 134. The heat conducting plate 134 is planar and disposed between the heating tubes 131 and the top plate 141 of the outer cover 140. Since the vapor of selenium is corrosive, the outer cover 140 should be made of a material resistant to selenium corrosion, such as graphite. However, when the heat conductivity of the material used is poor, even if the heating pipes 131 are interposed between the outer casings 140, the CIGS thin film solar cells are not uniformly heated. In contrast, in the present embodiment, the thermal conductivity of the heat conducting plate 134 is greater than the thermal conductivity of the top plate 141, so that the heat generated by the heating tubes 131 can be more evenly distributed over the entire surface of the heat conducting plate 134. Since the heating tubes 131 simultaneously heat the CIGS thin film solar cells 1 through the top plate 141 of the outer cover 14, the heat can be more uniformly heated. Fig. 5 is a view showing a thin film solar cell annealing apparatus according to another embodiment of the present invention. The annealing apparatus of the embodiment of Fig. 5 is similar to the annealing apparatus of the embodiment of Fig. 4, and therefore the same elements are denoted by the same reference numerals and their description will be omitted. As shown in FIG. 5, in the present embodiment, the heater 13 does not use a heating tube, but a heating plate 135 is used. The heating plate 135 is the same as the heating tube 131, and the heating plate 135 is a flat surface. The CIGS thin film solar cell 10 is heated uniformly. According to the present invention, an outer cover 14 is included, when the transfer device of the thin film solar cell annealing device (10) is at rest (4), and the heater 13 〇 201205676 is placed on the bottom plate 26 of the annealing chamber 21 to be a CIGS thin film solar cell. 10 When heating, a sealed space is formed between the outer cover 140 and the bottom plate 26, so that the selenium element in the CIGS thin solar cell can not be separated from the sealed space after being evaporated, and the selenium element of the CIGS thin film solar cell is reduced. The amount, in turn, increases the quality and yield of the CIGS thin tan solar cell 1〇a. In addition, the amount of the litmus element of the CIGS thin film solar cell 1 wipe has been reduced, so that the thin film solar annealing device is also reduced in the amount of the lanthanum element extracted from the annealing chamber, so that the subsequent processing can be reduced. The cost of the culvert vapor. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be modified in some ways without departing from the spirit and scope of the invention. The scope of protection is attached to the application of the subjective _ definer ride. In addition, all of the objects or advantages or features of the present invention are not to be construed as being limited by the scope of the invention. In addition, the abstract section and the title are only used for the search of patent documents, and the scope of the rights of Lin Si. 201205676 [Simple description of the diagram] The figure shows a schematic diagram of one step of the CIGS thin film solar cell manufacturing process. Figure m shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. Fig. 2A shows a schematic view of the external structure of an annealing apparatus of a conventional thin film solar cell. Fig. 2B is a view showing the internal structure of each annealing chamber of the annealing apparatus of the conventional thin film solar cell. Fig. 3A is a view showing a state in which one of the thin film solar cell annealing apparatuses according to the present invention is used. Fig. 3B is a schematic view showing another state of the thin film solar cell annealing apparatus according to the present invention. Fig. 4 is a view showing a thin film solar cell annealing apparatus according to an embodiment of the present invention. Figure 5 is a schematic illustration of a thin film solar cell annealing apparatus in accordance with another embodiment of the present invention. 201205676 [Description of main component symbols]
10 CIGS薄膜太陽能電池 100 薄膜太陽能電池退火裝置 10a CIGS薄膜太陽能電池 11 玻璃基板 111 加熱管 12 鉬金屬層 13 銅鎵金屬層 130 加熱器 131 加熱管 132 固定裝置 133 驅動裝置 134 導熱板 135 加熱板 14 銦金屬層 140 外罩 141 頂板 142 兩側翼板 15 砸層 tsi 15 201205676 16 CIGSe金屬層 20 退火裝置 21 〜25 退火室 26 底板 31 儲存室 32 儲存室 33 排氣管 35 入口 36 出口10 CIGS thin film solar cell 100 thin film solar cell annealing device 10a CIGS thin film solar cell 11 glass substrate 111 heating tube 12 molybdenum metal layer 13 copper gallium metal layer 130 heater 131 heating tube 132 fixing device 133 driving device 134 heat conducting plate 135 heating plate 14 Indium metal layer 140 Cover 141 Top plate 142 Side flaps 15 Layers tsi 15 201205676 16 CIGSe metal layer 20 Annealing device 21 ~ 25 Annealing chamber 26 Base plate 31 Storage chamber 32 Storage chamber 33 Exhaust pipe 35 Entrance 36 Exit
50 加熱器 51 加熱管 60 石墨板50 heater 51 heating tube 60 graphite plate