201143136 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種發光二極體及其製造方法。 【先前技術】 [0002] 近年來，氮化物之半導體材料被廣泛應用於發光二極體 (Light Emitting Diode)上，在發光二極體之制程 上一般利用氮化物之半導體材料做成各種各樣之混合晶 0 [〇〇〇3] 在先前技術中，發光二極體一般包括基板、成長在所述 基板上之氮化鎵（GaN)緩衝層、成長在所述氮化鎵（ GaN)緩衝層上之氮化鋁鎵（ AlGaN)束縛層以及成長在 所述氮化鋁鎵（AlGaN)束缚層上之杳光結構。上述發光 二極體之結構容易產生以下問題：在所述氮化鎵（GaN) 緩衝層上成長所述氮化鋁鎵（AlGaN)束缚層時，由於應 力，所述氮化鋁鎵（AlGaN)束缚層表面容易產生裂痕， 從而影響發光二極體之晶格品質；另外，所述發光結構 〇 發出之光線容易被所述氮化鎵（GaN)緩衝層吸收，從而 造成光損失，影響發光二極體之光取出效率。 【發明内容】 1；〇〇〇4]彳鑒於此，有必要提供一種可降低應力，提升晶格品質 與光取出效率之發光二極體及其製造方法。 [0005] —種發光二極體，其包括一基板、一位於所述基板上緩 衝層、一位於所述緩衝層上並且具有第一折射率之圖案 化層、一位於所述圖案化層上並且具有第二折射率之半 導體層以及一位於所述半導體層上之發光結構。所述第 099116739 表單編號A0101 第3頁/共14頁 0992029752-0 201143136 一折射率小於所述第二折射率。 [0006] [0007] [0008] [0009] [0010] [0011] [0012] [0013] [0014] 099116739 一種發光二極體之製造方法，其包括以下幾個牛驟 提供一基板，益成長一緩衝層於所述基板上. 在所述緩衝層上成長一圖案化層； 在所述圖案化層上製作圖案； 在所述圖案化層上成長一半導體層； 在所述半導體層上成長一半導體發光結構。 從 應 相較於先前技術’科明之聽二_結構在緩卜 成長一圖案化層，並在所述圖案化層上製作圖案衝層上 該圖案上釋放成長在該圖案化層上之半導體層〃，利用 減少半導體層表面產生裂縫，提升了晶格之品質應力’ ，半導體層折射率大於所述圖案化層之折射:二，二外 可以使發光結構發出之部分光線在所料導體層斑攸而 圖案化層之介面發生全反射，減少光線被基板2所述 而提升了所述發光二極體之光取出效率。本發明除了 用於一般發光二極體外，對於製作UV發光二極體之效果 更佳。 【實施方式】 以下將結合附圖對本發明作進一步之詳細說明。 凊參閱圖1 ,本發明實施方式提供之發光二極體ίο包括一 基板100、一成長在所述基板1〇〇上之緩衝層200、一成 長在所述緩衝層2〇〇上之具有第一折射率之圖案化層300 、一成長在所述圖案化層300上之具有第二折射率之半導 0992029752-0201143136 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a light-emitting diode and a method of manufacturing the same. [Prior Art] [0002] In recent years, nitride semiconductor materials have been widely used in light emitting diodes, and nitride semiconductor materials are generally used in various processes of light emitting diodes. Mixed crystal 0 [〇〇〇3] In the prior art, a light-emitting diode generally includes a substrate, a gallium nitride (GaN) buffer layer grown on the substrate, and grown in the gallium nitride (GaN) buffer An aluminum gallium nitride (AlGaN) tie layer on the layer and a calender structure grown on the aluminum gallium nitride (AlGaN) tie layer. The structure of the above-described light-emitting diode easily causes the following problem: when the aluminum gallium nitride (AlGaN) tie layer is grown on the gallium nitride (GaN) buffer layer, the aluminum gallium nitride (AlGaN) is stressed due to stress. The surface of the binding layer is prone to cracks, thereby affecting the lattice quality of the light-emitting diode; in addition, the light emitted by the light-emitting structure is easily absorbed by the gallium nitride (GaN) buffer layer, thereby causing light loss and affecting the light-emitting The light extraction efficiency of the polar body. SUMMARY OF THE INVENTION [1] In view of the above, it is necessary to provide a light-emitting diode which can reduce stress, improve lattice quality and light extraction efficiency, and a method of manufacturing the same. [0005] A light emitting diode comprising a substrate, a buffer layer on the substrate, a patterned layer on the buffer layer and having a first refractive index, and a patterned layer on the patterned layer And a semiconductor layer having a second refractive index and a light emitting structure on the semiconductor layer. The 099116739 Form No. A0101 Page 3 of 14 0992029752-0 201143136 A refractive index is less than the second refractive index. [0086] [0014] [0014] [0014] 099116739 A method of manufacturing a light-emitting diode, comprising the following steps to provide a substrate a buffer layer on the substrate. a patterned layer is grown on the buffer layer; a pattern is formed on the patterned layer; a semiconductor layer is grown on the patterned layer; and grown on the semiconductor layer A semiconductor light emitting structure. The semiconductor layer grown on the patterned layer is released on the patterned layer by forming a patterned layer on the patterning layer compared to the prior art. 〃, the use of reducing the surface of the semiconductor layer to generate cracks, improve the quality stress of the lattice ', the refractive index of the semiconductor layer is greater than the refraction of the patterned layer: two, two can make part of the light emitted by the light-emitting structure in the conductor layer spot The interface of the patterned layer is totally reflected, and the reduction of light is described by the substrate 2 to enhance the light extraction efficiency of the light emitting diode. In addition to being used in a general light-emitting diode, the present invention is more effective for producing a UV light-emitting diode. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 1 , a light emitting diode provided by an embodiment of the present invention includes a substrate 100, a buffer layer 200 grown on the substrate 1 , and a growth layer on the buffer layer 2 a refractive index patterned layer 300, a semiconducting 0992029752-0 having a second refractive index grown on the patterned layer 300
表單編號 AG1G1 ^ 4 I/* 14 I 201143136 [0015] [0016] [0017] Ο ο [0018] 體層400以及一成長在所述半導體層400上之發光結構 500。所述第一折射率小於所述第二折射率。 所述基板100之材料可以為藍寶石、碳化矽、矽等材料構 成。在本實施方式中所述基板100為一藍寶石襯底。 請一併參閱圖2以及圖3，所述緩衝層200為氮化鎵（GaN) ’以相對於後績正常蠢晶溫度之較低之壞境蟲晶形成於 所述基板100上。 所述圖案化層300為氮化鋁（A1N)，其上之圖案可為連 續圖案或是部分連續圖案，例如網狀排列、圓柱狀孔洞 、多角柱狀孔洞等連續圖案，平行排列之長條柱狀等部 分連續圖案，或者其他排列之不規則之形狀。在本實施 方式中，沿所述圖案化層300之兩條邊建立X-Y坐標系， 在所述圖案化層300上沿平行X軸方向以及平行Y軸方向分 別形成多條溝道310。所述沿平行X軸方向上之溝道310之 開口寬度為A，沿平行Y軸方向上之溝道310之開口寬度為 B，所述圖案化層30 0之厚度為Η，所述A、B以及Η滿足以 下條件：1微米（/zm)<A<5微米；1微米<Β<5微米；0. 05 微米<Η<1微米。在本實施方式中，所述溝道310由半導體 黃光微影制程以及蝕刻技術製作。另外，所述溝道310包 括一傾斜之側邊320，其用於反射光線，可提高光線之折 射率。 所述半導體層400為氮化鋁鎵（A1 Ga, N，0<χ<1 ) 半導體層，其成長在所述圖案化層300上。所述圖案化層 300上之溝道310能夠很好之釋放所述半導體層400之應 099116739 表單編號A0101 第5頁/共14頁 0992029752-0 201143136 力，降低半導體層400因應力之作用而在表面產生裂痕或 是隙縫，避免影響後續發光結構500之成長品質。 [0019] 所述發光結構500包括成長在所述半導體層400上之η型氮 化物半導體層510、成長在所述η型氮化物半導體層5 10上 之氮化物發光層520以及成長在所述氮化物發光層520上 之ρ型氮化物半導體層530。所述發光層可以是單異質結 構、雙異質結構、單量子井層或是多重量子井層結構。 [0020] 在製作所述發光二極體10之過程中，當在所述圖案化層 300上成長所述半導體層400時，所述具有圖案化之圖案 化層300上之溝道310能夠很好之釋放所述半導體層400 之應力，防止所述半導體層400之表面產生裂痕，從而可 以很好地提升氮化鋁鎵半導體層400之晶格品質。另外由 於所述半導體層40 0之折射係數大於所述圖案化層30 0之 折射係數，因而所述氮化物發光層520朝向所述緩衝層 200發出之一部分光線在所述半導體層400與所述圖案化 層300之介面能夠被全反射，使該部分光線反射至所述發 光二極體10之出光侧，防止該部分光線被所述缓衝層200 以及基板100吸收，從而提升了所述發光二極體10之光取 出效率。 [0021] 本發明實施方式提供之一種發光二極體之製造方法包括 以下幾個步驟： [0022] 步驟一，提供一基板100，並成長一缓衝層200於所述基 板100上。所述基板100可以為藍寶石、碳化矽、矽等材 料構成。所述緩衝層2 0 0為氮化錄（G a Ν)。 099116739 表單編號A0101 第6頁/共14頁 0992029752-0 201143136 [0023] 步驟一，在所述緩衝層200上成長一圖案化層300。所述 圖案化層300為氮化鋁（ain)。 [0024] 步驟三，在所述圖案化層300上製作圖案。所述圖案採用 半導體黃光微影制程以及蝕刻技術製作，其中所述蝕刻 技術包含濕式钱刻（wet etching)或幹式姓刻（dry etching)。在本實施方式中，沿所述圖案化層3〇〇之兩 條邊建立χ-Υ坐標系，在所述圖案化層300上沿平行X轴方 向以及平行γ軸方向分別形成多條溝道。 [00¾]步驟四’在所述圖案化層300上成長一半導體層4〇〇。所 述半導體層400為氮化銘鎵（AlGaN)半.導.體層。 〇 [0026] 〇 [0027] [0028] 步驟五，在所述半導體層4〇〇上成長一半導髏發光結構 500。所述發光結構500包括成長在所述半導體層4〇〇上 之η型氮化物半導體層510、成長在所述n型氮化物半導體 層510上之氮化物發光層520以及成長在所述氮化物發光 層520上之ρ型氮化物半導艟層530。 在方法S101 ’ S102，S104以及S105中，所述緩衝層2〇〇 、圖案化層300、半導體層400以及發光結構5〇〇是採用 金屬有機化合物化學氣相沉積（MOCVD)或者分子束外延 生長（ΜΒΕ)制程工藝形成。 相較於先前技術，本發明之發光二極體結構在緩衝層上 成長一圖案化層’並在所述圖案化層上製作圖案，利用 該圖案上釋放成長在該圖案化層上之半導體層之應力， 減少半導體層表面產生裂縫，提升了晶格之品質，另外 ，半導體層折射率大於所述圖案化層之折射係數，從而 099116739 表單編號Α0101 第7頁/共14頁 0992029752-0 201143136 可以使發光結構發出之部分光線在所述半導體層與所述 圖案化層之介面發生全反射，減少光線被基板吸收，從 而提升了所述發光二極體之光取出效率。本發明除了應 用於一般發光二極體外，對於製作uv發光二極體之效果 更佳。 [0029] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0030] 圖1是本發明實施方式中之發光二極體之剖面示意圖。 [0031] 圖2是圖1中發光二極體基板至圖案化層之剖面示意圖。 [0032] 圖3是圖2中圖案化層之俯視示意圖。 【主要元件符號說明】 [0033] 發光二極體：10 [0034] 基板：100 [0035] 缓衝層：200 [0036] 圖案化層：300 [0037] 溝道：310 [0038] 侧邊：32 0 [0039] 半導體層：400 [0040] 發光結構：500 [0041] η型氮化物半導體層：510 099116739 表單編號Α0101 第8頁/共14頁 0992029752-0 530 201143136 [0042] 氮化物發光層：520 [0043] p型氮化物半導體層：Form No. AG1G1 ^ 4 I/* 14 I 201143136 [0016] [0017] A bulk layer 400 and a light emitting structure 500 grown on the semiconductor layer 400. The first refractive index is less than the second refractive index. The material of the substrate 100 may be made of a material such as sapphire, tantalum carbide or niobium. In the embodiment, the substrate 100 is a sapphire substrate. Referring to FIG. 2 and FIG. 3 together, the buffer layer 200 is formed of gallium nitride (GaN) ′ on the substrate 100 with a low-level insect crystal having a lower normal crystal temperature. The patterned layer 300 is aluminum nitride (A1N), and the pattern thereon may be a continuous pattern or a partial continuous pattern, such as a continuous pattern of a mesh arrangement, a cylindrical hole, a polygonal columnar hole, and a parallel arrangement of strips. A continuous pattern of columns or other irregular shapes, or other irregular shapes. In the present embodiment, an X-Y coordinate system is established along two sides of the patterned layer 300, and a plurality of channels 310 are formed on the patterned layer 300 in parallel X-axis directions and parallel Y-axis directions, respectively. The opening width of the channel 310 in the parallel X-axis direction is A, the opening width of the channel 310 in the parallel Y-axis direction is B, and the thickness of the patterned layer 30 0 is Η, the A, B and Η satisfy the following conditions: 1 μm (/zm) < A < 5 μm; 1 μm < Β < 5 μm; 0.05 μm < Η < 1 μm. In the present embodiment, the channel 310 is fabricated by a semiconductor yellow lithography process and an etching technique. Additionally, the channel 310 includes a sloped side 320 for reflecting light to increase the refractive index of the light. The semiconductor layer 400 is an aluminum gallium nitride (Al Ga, N, 0 < χ < 1 ) semiconductor layer grown on the patterned layer 300. The channel 310 on the patterned layer 300 can release the semiconductor layer 400, which is 099116739, Form No. A0101, Page 5/14, 0992029752-0, 201143136, and reduces the effect of the semiconductor layer 400 due to stress. Cracks or slits are formed on the surface to avoid affecting the growth quality of the subsequent light-emitting structure 500. [0019] The light emitting structure 500 includes an n-type nitride semiconductor layer 510 grown on the semiconductor layer 400, a nitride light emitting layer 520 grown on the n-type nitride semiconductor layer 5 10, and grown in the A p-type nitride semiconductor layer 530 on the nitride light-emitting layer 520. The luminescent layer may be a single heterostructure, a double heterostructure, a single quantum well layer or a multiple quantum well layer structure. [0020] In the process of fabricating the light emitting diode 10, when the semiconductor layer 400 is grown on the patterned layer 300, the channel 310 on the patterned patterned layer 300 can be very It is good to release the stress of the semiconductor layer 400 to prevent cracks on the surface of the semiconductor layer 400, so that the lattice quality of the aluminum gallium nitride semiconductor layer 400 can be improved. In addition, since the refractive index of the semiconductor layer 40 0 is greater than the refractive index of the patterned layer 30 0, the nitride light-emitting layer 520 emits a portion of light toward the buffer layer 200 in the semiconductor layer 400 and the The interface of the patterned layer 300 can be totally reflected, so that the portion of the light is reflected to the light exiting side of the light emitting diode 10, and the portion of the light is prevented from being absorbed by the buffer layer 200 and the substrate 100, thereby enhancing the light emission. The light extraction efficiency of the diode 10. [0021] A method for manufacturing a light-emitting diode according to an embodiment of the present invention includes the following steps: [0022] Step 1, a substrate 100 is provided, and a buffer layer 200 is grown on the substrate 100. The substrate 100 may be made of a material such as sapphire, tantalum carbide or niobium. The buffer layer 200 is a nitride recording (G a Ν). 099116739 Form No. A0101 Page 6 of 14 0992029752-0 201143136 [0023] Step one, a patterned layer 300 is grown on the buffer layer 200. The patterned layer 300 is aluminum nitride (ain). [0024] Step 3, creating a pattern on the patterned layer 300. The pattern is fabricated using a semiconductor yellow lithography process and etching techniques, wherein the etching technique includes wet etching or dry etching. In the present embodiment, a χ-Υ coordinate system is established along the two sides of the patterned layer 3, and a plurality of channels are formed on the patterned layer 300 in the parallel X-axis direction and the parallel γ-axis direction, respectively. [0034] Step 4' grows a semiconductor layer 4 on the patterned layer 300. The semiconductor layer 400 is a nitrided aluminum (AlGaN) semiconductor layer. [0028] [0028] Step 5, growing a half of the light-emitting structure 500 on the semiconductor layer 4〇〇. The light emitting structure 500 includes an n-type nitride semiconductor layer 510 grown on the semiconductor layer 4, a nitride light-emitting layer 520 grown on the n-type nitride semiconductor layer 510, and grown in the nitride A p-type nitride semi-conductive layer 530 on the light-emitting layer 520. In the methods S101' S102, S104 and S105, the buffer layer 2, the patterned layer 300, the semiconductor layer 400, and the light-emitting structure 5 are grown by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. (ΜΒΕ) Process technology is formed. Compared with the prior art, the light emitting diode structure of the present invention grows a patterned layer ' on the buffer layer and patterns on the patterned layer, and the semiconductor layer grown on the patterned layer is released by using the pattern. The stress reduces the crack on the surface of the semiconductor layer and improves the quality of the crystal lattice. In addition, the refractive index of the semiconductor layer is greater than the refractive index of the patterned layer, so that 099116739 Form No. 1010101 Page 7 / Total 14 Page 0992029752-0 201143136 Part of the light emitted by the light emitting structure is totally reflected at the interface between the semiconductor layer and the patterned layer, thereby reducing light absorption by the substrate, thereby improving the light extraction efficiency of the light emitting diode. In addition to being applied to a general light-emitting diode, the present invention is more effective for producing a uv light-emitting diode. In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, all changes made in accordance with the spirit of the present invention should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0030] FIG. 1 is a schematic cross-sectional view of a light-emitting diode according to an embodiment of the present invention. 2 is a schematic cross-sectional view of the light emitting diode substrate of FIG. 1 to a patterned layer. 3 is a top plan view of the patterned layer of FIG. 2. [Main component symbol description] [0033] Light-emitting diode: 10 [0034] Substrate: 100 [0035] Buffer layer: 200 [0036] Patterned layer: 300 [0037] Channel: 310 [0038] Side: 32 0 [0039] Semiconductor layer: 400 [0040] Light-emitting structure: 500 [0041] n-type nitride semiconductor layer: 510 099116739 Form number Α 0101 Page 8 / 14 pages 0992029752-0 530 201143136 [0042] nitride light-emitting layer :520 [0043] p-type nitride semiconductor layer:
099116739 表單編號A0101 第9頁/共14頁 0992029752-0099116739 Form No. A0101 Page 9 of 14 0992029752-0