TW201142676A - Optical sensor device, display apparatus, and method for driving optical sensor device - Google Patents

Abstract

An optical sensor device includes a plurality of optical sensor units two-dimensionally arranged, a scan driver, and a detection driver. The scan driver sets optical sensor units, in each row, in a selected state. The detection driver acquires detection signals corresponding to illuminance of incident light on the optical sensor units. Each of the optical sensor units comprises a first optical sensors including a first photoelectric conversion section blocked from light and a second optical sensor including a second photoelectric conversion section configured to change the illuminance in response to an externally applied external force. The detection driver maintains each voltages of electrodes of the first optical sensors and each voltages of electrodes of the second optical sensors in equal voltage levels to each other, and acquires a plurality of voltage signals in parallel.

Description

201142676 VI. INSTRUCTIONS: The present invention is based on the application of the Japanese Patent Application No. 2010-083740, filed on March 31, 2010, and the Japanese Patent Application No. 2010, filed on March 31, 2010. Japanese Patent Application Publication No. 2010-265380, the entire disclosure of which is hereby incorporated by reference in its entirety in the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire all all all all all all all each [Technical Field] The present invention relates to a light sensing device 'display device and a method for driving the light sensing device, and more particularly to a two-dimensional sensor such as a touch panel built in the display device Light sensing device and driving method thereof. [Prior Art] A photosensor (thin film transistor photosensor) formed by a thin film transistor (TFT) is in a state in which a predetermined potential (generally a negative potential) is supplied to a gate, and it is detected that The light of the light sensor is incident on the generated photocurrent signal. The photocurrent is a current flowing between the drain and the source of the TFT. Hereinafter, it is referred to as a bungee current. In recent years, various touch sensors have been proposed which incorporate such a photosensor into a photodetecting method constructed in a display panel of a display device. Here, it is particularly known that an amorphous germanium TFT (a-Si TFT) changes its electrical characteristics due to a change in duration or a change in temperature. When such a change in duration or temperature occurs, even if the illuminance of the incident light to the TFT does not change, the drain current output from the TFT differs before or after the change in temperature or temperature. This

S -4 · 201142676 Variations in the drain current from the TFT have an adverse effect on photodetection. Therefore, when such a T F T is used for the touch sensor, the occurrence of erroneous detection of the contact position or the change in the detection sensitivity may have a possibility that the stable operation cannot be achieved. Japanese Laid-Open Publication No. 2009-87961 describes a configuration of a photosensor capable of suppressing a change in a drain current caused by deterioration or temperature change even if a change in temperature or a temperature change occurs in the TFT. This document describes the configuration corresponding to one photosensor. However, when the photosensor is used as a two-dimensional sensor such as a touch panel, it is necessary to arrange a plurality of photosensors in two dimensions. In the case where the photosensor is arranged two-dimensionally in this manner, when a configuration described in the document is applied as a photosensor, a plurality of photosensors are arranged so that good detection sensitivity can be obtained. The area for wiring to which the photo sensor is connected increases, and the display quality of the display panel deteriorates. Further, when wirings connected to a plurality of photosensors or photosensors are arranged so as not to impair the display quality, a sufficient number of photosensors cannot be disposed, and good detection sensitivity cannot be obtained. In this way, it is difficult to obtain a good detection sensitivity of the photosensor without damaging the display quality. SUMMARY OF THE INVENTION The present invention is directed to a light sensing device having a plurality of photosensors arranged in two dimensions on a substrate, and having a photosensor capable of suppressing temporal changes or temperature changes of the photosensor The advantages of the light sensing device and its driving method that affect the sensitivity of the detection. Moreover, the present invention is a display device including a plurality of display pixels and a plurality of photosensors which are two-dimensionally arranged on a substrate in 201142676, and is provided to provide a photosensor without impairing display quality. Advantages of the display device for detecting sensitivity: The light sensing device according to the first aspect of the present invention, which is provided with the above-described first aspect, includes: a first substrate; and a plurality of light sensing units arranged in two dimensions in the first a surface of the substrate; the scan driver sets the light sensing portion disposed in each column to a selected state; and the detecting driver takes the respective light sensing portions set to the selected state in response to the incident a detection signal of the illuminance of the light; the light sensing unit includes: a first photosensor having a first photoelectric conversion unit that is shielded from light; and a second photosensor having the illuminance corresponding to the illuminance a second photoelectric conversion unit that externally applies an external force; the detection driver maintains voltages of the respective first photosensors and the respective electrodes of the second photosensors in the selected state. Voltage, and Corresponding to the illuminance, taken in parallel with the current is set to the selection state of each of the second optical sensor corresponding to a plurality of flow voltage signal as the detection signal. A display device according to a second aspect of the present invention, which has the above advantages, comprising: a substrate;

S -6 - 201142676 A plurality of display pixels are arranged on the surface of the substrate in two dimensions, each having an optical element; a plurality of light sensing portions are arranged on the surface of the substrate in two dimensions; the scanning driver is The respective light sensing units arranged in the respective rows are set to a selected state; and the detecting driver takes in a detection signal corresponding to the illuminance of the incident light of the respective light sensing units set to the selected state: Each of the photosensors includes a first photosensor including a first photoelectric conversion unit that blocks light, and a second photosensor that has a illuminance that changes depending on external force applied from the outside. 2 photoelectric conversion unit; the detection driver maintains a voltage equal to a voltage of each of the first photosensor and the second photosensor set to the selected state, and corresponds to the illuminance 'parallel A plurality of voltage signals corresponding to currents flowing through the respective second photosensors set to the selected state are input as the detection signals. A display device according to a third aspect of the present invention, which has the above advantages, further includes: a substrate; a plurality of display pixels arranged on the surface of the substrate in two dimensions, each having an optical element; and a plurality of light sensing portions The light sensing unit is provided in a two-dimensional array on the surface of the substrate, and each of the light sensing units includes a first photosensor including a first photoelectric conversion unit that blocks light, and a second photo sensor that has a second photosensor. The illuminance corresponds to a second photoelectric conversion unit that changes external force; 201142676 Each of the display pixels includes a predetermined number of sub-pixels that are different in color in the column direction; the first photosensor and the first photosensor The second photosensors are each disposed in a region between the display pixels arranged in the column direction. In a method of driving a light sensing device according to a fourth aspect of the present invention, the light sensing device includes a plurality of light sensing portions 2 that are two-dimensionally arranged, and each of the light sensing portions includes: The first photo-electric transducer is provided with a first photoelectric conversion unit that is shielded from light, and the second photo-electricity sensor includes a second photoelectric conversion unit that changes the illuminance of the incident light in response to external force applied from the outside. The first photo sensor and the second photo sensor disposed in each of the columns are set to a selected state; the first photosensor and the first photosensor to be set in the selected state 2 The voltage of each electrode of the photo sensor is maintained at a voltage equal to the voltage, and a plurality of voltage signals corresponding to the current flowing in the second photosensor are taken in parallel according to the illuminance. It is apparent from the following description, or will be apparent from the description of the invention. The advantages of the present invention can be realized and obtained by the means and combinations particularly pointed out below. The drawings, which are incorporated in and constitute a part of the specification, illustrate the embodiments of the invention, and are in the

S-8 - 201142676 Hereinafter, embodiments of the present invention will be described with reference to the drawings. <First Embodiment> First, a first embodiment of the present invention will be described. Fig. 1 is a view showing an example of a cross-sectional structure of a display panel 10 having a light-sensing device according to a first embodiment of the present invention. Fig. 2 is a view showing the configuration of the TFT sensor το provided on the display panel 10. The third diagram and the third diagram show the configuration of the TFT sensor T1 provided on the display panel 1A. Fig. 3A shows a state in which a finger or the like does not contact the display panel 10, and Fig. 3B shows a state in which a finger or the like touches the display panel 1A. Fig. 4 is a front elevational view showing a display panel provided with a light sensing device according to the first embodiment of the present invention. Fig. 1 is a cross-sectional view showing the display panel 1 in the I-I direction shown in Fig. 4. The display panel 10 shown in Fig. 1 constitutes a liquid crystal display device in which a plurality of thin film electromorph sensor portions are built. The display panel 10 of the present embodiment has a TFT substrate (first substrate) 1〇1 and a color filter substrate (second substrate) 102. The liquid crystal 103 is sealed between the TFT substrate 101 and the color filter substrate 102. Further, the backlight 104 as a light source is provided on the lower side of the TFT substrate 101, and is configured to be irradiated from the back surface of the TFT substrate 101, for example, white light. Further, the polarizing plates 131 and 132 whose polarization directions are orthogonal to each other are provided on the upper surface side of the color filter substrate 1 〇 2 on the side of the field of view and on the lower surface side of the backlight 110 side of the TFT substrate 110. The TFT substrate 110 as the first substrate is made of a transparent substrate such as a glass substrate. A plurality of pixels TFT - T2 for forming a liquid crystal display device, a plurality of gate lines (scanning lines) 11 1 , and a plurality of gate lines (signal lines) 1 12 are provided on the upper surface of the TFT substrate 101. Further, a plurality of thin film transistor type photo sensors constituting the photo sensing device of the present embodiment are disposed on the upper surface of the TFT substrate 110. Each of the thin film transistor photosensor sections has a pair of T F T sensors T 0 and T F T sensors T 1 . Moreover, on the upper surface of the TFT substrate 101, a plurality of TFT sensors T0 and T1 are two-dimensionally arranged, and a plurality of sensor gate lines 1 2 1 and a plurality of sensor drain lines are provided (first sense) The first signal line of the detector, the first signal line of the second sensor 1 22, and the plurality of sensor source lines (the second signal line of the first sensor and the second signal line of the second sensor) 1 2 3. When viewed in the I-I section, the pixel TFT - T2 is not seen in the first figure, and only the drain line 1 1 2 is seen. Each of the drain lines 1 1 2 is connected to the drain electrode of T 2 . However, the drain line 112 also substantially constitutes the drain electrode of the pixel TFT-T2. Therefore, the drain line 1 12 is also referred to as the drain electrode of the pixel TFT - T2. Further, as shown in Fig. 4, each of the gate lines 1 1 1 is connected to the gate electrode of T2. However, the gate line 1 1 1 actually constitutes the gate electrode of the pixel TFT - T2. Therefore, in the following, the gate line 1 1 1 is also referred to as the gate electrode of the pixel TFT - T2.

S -10- 201142676 Here, the gate line 1 1 1 is disposed along the column direction of the TFT substrate 110 (the X direction shown in FIG. 4), and the drain line 1 1 2 is along the TFT substrate 1 The direction of 01 is set in the Y direction shown in Figure 4. The thin film transistor type photo sensor has a first thin film transistor type photo sensor and a second thin film transistor type photo sensor. As shown in FIG. 2, the TFT sensor TO as the first thin film transistor photosensor has a gate electrode 121, a drain electrode 122, a source electrode 123, a photoelectric conversion portion 124, and a channel protective film 127. . The TFT sensor TO is an n-channel TFT. The photoelectric conversion portion 124 includes a semiconductor layer which is made of an amorphous germanium (a-Si) film. The channel protective film 127 contains an insulating film having transparency. The gate 112 of the TFT sensor T0 is formed to extend in the direction (X direction) of the display panel 10 in order to constitute the sensor gate electrode 112. Further, the gate electrode 112 of the TFT sensor T0 is connected to the gate terminal of the sensor driver described later. Moreover, the drain electrode 122 and the source electrode 123 of the TFT sensor T0 are arranged along the direction of the display panel 10 in order to form the sensor drain line 1 22 and the sensor source line 1 23 (Y). Directional) is formed in an extended manner. Further, the drain 1 22 and the source 1 23 of the TFT sensor TO are connected to the 汲 terminal and the source terminal of the sensor driver to be described later. Further, a light shielding wall 125 of a material having a light-shielding property such as metal or resin is formed at a position covering the photoelectric conversion portion 124 of the TFT sensor T0. Each of the electrodes of the TFT sensor T0 and the photoelectric conversion portion 124 are insulated by an insulating film 105 having transparency. -11- 201142676 The TFT sensor TO having such a configuration is in a state where the photoelectric conversion portion 14 is shielded by the light shielding wall 1 2 5 as shown in Fig. 2 . Therefore, light emitted from the backlight 104 or external light does not enter the photoelectric conversion portion 14 of the TFT sensor Τ0. Therefore, even when the TFT sensor T0 is in the selected state of the on state, the photocurrent signal (the gate current IdsO) corresponding to the dark current is always output. As shown in Fig. 3A, the TFT sensor T1 as the second thin film transistor photosensor has a gate electrode 121, a drain electrode 122, a source electrode 123, a photoelectric conversion portion 124, and a channel protective film 127. The TFT sensor T1 is an n-channel TFT. The photoelectric conversion unit 124 is provided with a semiconductor layer formed of an a-Si film. The channel protective film 1 27 contains an insulating film having transparency. The gate electrode 1 2 1 of the TFT sensor T 1 is provided to extend along the direction of the display panel 1 为了 in order to constitute the sensor gate line electrode 1 1 1 . The gate electrode 121 of the TFT sensor T1 is connected to a gate terminal of a sensor driver to be described later. Moreover, the drain electrode 122 and the source electrode 123 of the TFT sensor T1 are respectively arranged along the display panel 1 in order to form the sensor drain line 1 2 2 and the sensor source line 1 2 3 . The way the direction is extended. Further, the drain electrode 1 2 2 of the TFT sensor T 1 and the source electrode 1 2 3 are connected to the drain terminal and the source terminal of the sensor driver to be described later. Further, the light shielding wall I26 is formed so as to surround the photoelectric conversion portion 14 of the TFT sensor T1. The light shielding wall 126 is made of a material such as a metal or a resin which is at least light-shielding to visible light. Shading wall 126 to be empty

S -12- 201142676 A gap (referred to as a light valve) is formed between its upper end and the color filter substrate 102 in such a manner as to determine its height. This height corresponds to the length in the direction perpendicular to the plane direction of the upper surface of the TFT substrate 101. Further, each electrode of the TFT sensor T1 and the photoelectric conversion portion 124 are insulated by an insulating film 156 having transparency. As shown in Fig. 3A, the TFT sensor T1 of such a configuration is in a state in which the light valve is opened while the external force of the user's finger or the like is not applied to the color filter substrate 102. In this state, the photoelectric conversion portion 124 of the TFT sensor T 1 is in an exposed state. Therefore, the light emitted from the backlight 104 or the external light is incident on the photoelectric conversion portion 124 of the TFT sensor T1 via the light valve. Therefore, when the TFT sensor T1 is in the selected state of the on state, the drain current corresponding to the illuminance of the incident light is output. On the other hand, when the pressure of the downward pressure is applied to the color filter substrate 1 〇 2 by an external force such as a user's finger or the like, as shown in FIG. 3B, a part of the color filter substrate 102 is bent and deformed. The light valve is in a closed state. The state in which the light valve is closed is a state in which the gap between the color filter substrate 102 and the light shielding wall 1 26 is sufficiently narrow or a state in which there is no gap. In this state, the photoelectric conversion unit 14 of the T F T sensor T 1 is in a light blocking state in which light emitted from the backlight 104 is not incident. Therefore, the TFT sensor T 1 outputs a drain current IdsO equivalent to a dark current. As shown in FIGS. 1 and 3, the surface of the color filter substrate 102 facing the TFT substrate 101 is formed on the surface of the TFT sensor T1 so as to face the photoelectric conversion portion 124 of the TFT sensor T1. Reflective film such as film 201142676 1 2 8. Light or external light emitted from the backlight 1 〇 4 is efficiently incident on the photoelectric conversion portion 124 of the TFT sensor T1 by the reflection film 128. Alternatively, the reflective film 1 2 may be omitted, and the light-shielding film 142 formed on the color filter substrate 102 may be used as a reflective film as will be described later. The pixel TFT - T2 has a gate electrode 111, a drain electrode 112, and a source electrode 112. The gate electrode 1 1 1 of the pixel TFT - T2 extends to constitute a gate line (pixel selection line) 1 1 1 of the display panel 1 所示 shown in Fig. 4. Further, the drain line electrode 1 1 2 extends to constitute a drain line (data input line) 1 1 2 and is orthogonal to the gate line 1 1 1 . These gate lines 1 1 1 and the drain lines 1 1 2 are connected to a display driving circuit (not shown). Further, the source electrode 113 is connected to the pixel electrode 114. The color filter substrate 102 as the second substrate is made of a substrate having transparency such as a glass substrate. A color filter 141 having any one of red (R), green (G), and blue (B) is formed at a position facing the pixel electrode 141 below the color filter substrate 102. Further, the light shielding film 142 is formed to surround the color filters 141 of the respective colors. The light shielding film 142 functions as a black matrix. Further, a surface of the color filter 141 facing the pixel electrode 114 is formed on a common electrode 143 made of a transparent electrode such as an ITO (Indium Tin Oxide) film. A common voltage having a predetermined potential level is applied to the common electrode M3.

S - 14 - 201142676 Further, the polarizing plate 131 is provided on the upper surface of the color filter substrate 102. The upper surface of the color filter substrate 102 is the view side. The liquid crystal display element as an optical element is formed by the above-described pixel electrode 114, common electrode 143 and polarizing plates 131 and 132, and liquid crystal sandwiched between the pixel electrode 141 and the common electrode 143. Further, although not shown in Fig. 1, the TFT substrate 101 and the color filter substrate 102 are adhered to each other by a sealing member, and the liquid crystal 103 is sealed by a sealing member. In Fig. 4, a pixel TFT_T2 constituting a display panel 1A corresponding to each of red (R), green (G), and blue (B) of the color filter substrate 102, and a pixel TFT T2 are connected. One pixel electrode 114 constitutes one sub-pixel. Further, 'the color filter substrate 102 is disposed in three colors corresponding to the color filters 141 of the three colors of the respective red (R), green (G), and blue (B) adjacent to each other in the column direction. The sub-pixels constitute one display pixel. However, a plurality of display pixels are arranged in two dimensions. Further, in correspondence with the display pixels which are two-dimensionally arranged in this manner, the TFT sensor T0 and the TFT sensor T1 are alternately arranged in the column direction via the respective pixels. Fig. 4 shows a state in which it is blocked by the light shielding wall 1 2 5 . The TFT sensor T0 and the gate electrode 121 of the TFT sensor T1 are formed to have a length substantially equal to the length of one display pixel in the row direction. Further, the capacitance line 151 is wound around the lower surface side of the pixel electrode 114. A voltage is applied to the capacitance line 151 to the same voltage as the common voltage applied to the common electrode 143. A storage capacitor corresponding to each sub-pixel is formed by the capacitance line 151 and the pixel electrode n4. r, -15- 201142676 Next, the circuit configuration of the display panel 本 of the present embodiment and the configuration of a driving circuit for driving the thin film transistor photosensor built in the display panel 10 will be described. In the present embodiment, the display area of the display panel 10 is divided into a plurality of divided areas (photosensor groups) 11', and it is possible to determine whether or not the user's finger or the like is in contact with each divided area 11. The display area is an area in which the pixel electrodes are arranged. Fig. 5 is a view showing the division of the area of the display area in the embodiment. Fig. 5 shows an example in which the display area (the area indicated by the broken line in the figure) of the display panel 10 is divided in the column direction 7 and divided in the row direction 5. Each of the divided regions (divided regions) 1 shown in Fig. 5 is, for example, a substantially rectangular region having an area of about a finger size of an adult and having a side of about 5 mm. A plurality of display pixels as shown in FIG. 4 are disposed in each of the divided regions 11. The TFT sensor TO and the TFT sensor T 1 are disposed adjacent to each other in the direction of the column of each display pixel. That is, the TFT sensor T0 and the TFT sensor T 1 are alternately arranged via one display pixel along the column direction of the display panel 1 。. A TFT sensor T0 disposed adjacently in the column direction via one display pixel and a TFT sensor T1 constitute a pair of sensors. When the TFT sensor T0 and the TFT sensor T1 are configured in this manner, as each sensor pair, the TFT sensor T0 and the TFT sensor T 1 are disposed in a very close position, and substantially can be regarded as two Configured in roughly the same position

S -16- 201142676 Set. In this case, the TFT sensor TO of each sensor pair and the TFT sensor T 1 can be regarded as substantially equal in element temperature. In the present embodiment, the divided regions 11 in the same column (X direction) are arranged in the plurality of divided regions 1 1 shown in FIG. 5, and the external sensor gate lines 1 2 1 are shared in the display region. And connected to the sensor driver 20. Further, in the plurality of divided regions 11 shown in FIG. 5, the divided regions 1 are arranged in the same row (Y direction), and the sensor has a drain line 1 2 and a sensor source outside the display region. Lines 1 2 3 are shared and connected to the sensor driver 20, respectively. Preferably, the sensor gate line 1 2 1 , the sensor drain line 1 2 2 and the sensor source line 1 2 3 are shared externally of the display area, respectively. This is because if the sensor gate line 1 2 1 , the sensor drain line 1 2 2 and the sensor source line 1 2 3 are internalized in the display area, the wiring becomes complicated and may be The image displayed on the display panel has an adverse effect on the image. As will be described later, in the present embodiment, the sensor pair of the TFT sensor TO and the TFT sensor T1 in one divided region 1 1 is simultaneously driven. Thus, the TFT sensor TO and the TFT sensor T1 in the divided region 1 1 do not necessarily separate the sensor gate lines. Therefore, it suffices to set the gate terminals (G1 to G5 shown in Fig. 5) of the divided regions to the sensor driver 20. In contrast, with respect to the sensor drain line 1 2 2, it is necessary to separate the T F τ sensor TO from the TFT sensor Τ1. 201142676 Therefore, in the sensor driver 20, it is necessary to separately set the 汲 terminal for the TFT sensor TO of the number of lines of the divided area (D1 _ 〇 to D 7- 第 shown in Fig. 5), and divide The row of the area is used for a number of TFT electrodes T1 for the terminal (D1 - 1 to D7 - 1 shown in Fig. 5). Further, in the sensor driver 20, the source terminals of the TFT sensor T 0 and the T F T sensor T 1 are also individually provided. By providing the terminal to the sensor driver 20' in this manner, the current 値 of the drain current output from each divided region 11 can be increased. Moreover, it also becomes a cause of a decrease in the number of terminals of the sensor driver 20. Fig. 6 is a view showing a detailed circuit configuration of a portion of one divided region 11 of the portion A of Fig. 5. As shown in Fig. 6, the sensor gate lines 1 2 1 of the TFT sensors TO, T1 arranged in the same column are shared. The shared sensor gate line 1 2 1 is shared with a plurality of strips corresponding to one divided area outside the display area, and is connected to the common gate line GL5. The common gate line GL5 is connected to the gate terminal G5 of the sensor driver 20. Further, the sensor drain lines 1 22 of the TFT sensors T0 arranged in the same row are shared. The shared sensor drain line 1 22 shares a plurality of strips corresponding to one divided area outside the display area, and shares the drain line (the first sensor drain line, sharing the first sense) The first signal line) DL70 is connected. The shared drain line DL70 is connected to the 极端 terminal D7_0 of the sensor driver 20.

S -18- 201142676 Similarly, the sensor NMOS lines 1 22 of the TFT sensors 配置 1 arranged in the same row are shared. The shared sensor drain line 1 22 shares a plurality of strips corresponding to one divided area outside the display area, and shares the drain line (the second sensor drain line, sharing the second sensing) The first signal line) DL71 is connected. The shared drain line DL71 is connected to the 极端 terminal D7_1 of the sensor driver 20. Further, the sensor source lines 1 23 of the TFT sensors TO arranged in the same row are shared. The shared sensor source line 1 23 is shared with a plurality of divided regions 1 1 outside the display region, and is connected to a common source line (first sensor source line) SL70. The common source line SL70 is connected to the source terminal S7-0 of the sensor driver 20. Further, the sensor source lines 1 2 3 of the TFT sensors 配置1 arranged in the same row are shared. The shared sensor source line 1 23 is shared with a plurality of divided regions 1 1 outside the display region, and is connected to a common source line (second sensor source line) SL71. Moreover, the common source line SL: 71 is connected to the source terminal S7-1 of the sensor driver 20. Fig. 7 is a circuit diagram showing an example of the circuit configuration of the sensor driver 20. The sensor driver 20 has a scan driver 20 1 and a detection driver 202 » The scan driver 20 1 sequentially outputs sensor scan signals from the gate terminals G 1 G G5, and TFTs connected to the gate terminals Gn are sensed. The pair of the device T0 and the TFT sensor Τ 1 are sequentially set to the selected state in column units. The selected state is 201142676. The selected state is the state in which the TFT sensor TO and the TFT sensor T1 are set to be in an on state. The detection driver 202 converts the photocurrent signal (the drain current) output from the TFT sensor T 1 set to the selected state into a voltage signal, and then takes in parallel the plural according to the plurality of TFT sensors T 1 . The voltage signals are sequentially outputted as a detection signal by outputting V 〇ut according to a plurality of digital signals of the respective voltage signals. The scan driver 20 1 has a column direction shift register 201 1 as a column direction drive unit. The column direction shift register 201 1 has a plurality of gate terminals having the same number as the number of the plurality of common gate lines GLn of the display panel 10 (five in the example of Fig. 7). The column direction shift register 2 0 1 1 sets a plurality of TFT sensors TO, T1 of each divided region 1 1 connected via each common gate line GLn and the sensor gate line 1 2 1 to be selected. status. The detecting driver 202 of the present embodiment has a plurality of 汲-terminal and source terminals having the same number as the plurality of shared drain lines D Lm and the plurality of shared source lines S Lm of the display panel 1 ( The example in Figure 7 is the 汲 terminal (7x2 = 14) + source terminal (7x2 = 14) = 28). However, a plurality of 汲 terminals Dm-0 (m=l, 2.....7 corresponding to FIG. 7) connected to the drain electrodes of the TFT sensor T0 are respectively non-inverted with the operational amplifier AMP1. Input terminals are connected. A voltage source for supplying the potential Vd is connected to the non-inverting input terminal.

S -20- 201142676 Further, a plurality of 汲 terminals Dm — l (m=l, 2, . . . , 7) connected to the drain electrode of the TFT sensor T1 and the inverting input terminal of the operational amplifier AMP1 connection. Further, a resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1. The current-voltage conversion circuit is constituted by an operational amplifier AMP1 and a resistor Rf. Further, the plurality of source terminals SLm0 (m=l, 2.....7) of the plurality of common source lines SLmO (m=l, 2.....7) are connected to the plurality of source terminals Sm_0 (m=l, 2.....7) and the current source One end of the CS is connected. The other end of the current source CS is connected to a voltage source that supplies a potential Vss (Vss < Vd). The current source C S is a current sinking current source that causes the current Is to flow in a direction from the source terminal S m - 0 to which one end is connected to the voltage source V s s side to which the other end is connected. Further, a plurality of source terminals Sm - l (m = 1, 2, ..., 7) to which the plurality of common source lines SLml (m = 1, 2, ..., 7) are connected are connected via a buffer circuit The BUF is connected to one end of the current source CS. Further, the output terminals of the plurality of operational amplifiers AMP1 are connected in common to the sample-and-hold circuit (SH) 203. The sample and hold circuit (SH) 203 is taken in parallel with a plurality of 汲 terminals

The output voltage (voltage signal) of each of the plurality of operational amplifiers AMP1 corresponding to each of Dm-l (m=l ' 2.....7) is used as a parallel signal. Further, the SH circuit 203 is connected to the parallel string conversion circuit 2〇4, and the parallel series conversion circuit 204 is connected to the analog-to-digital conversion circuit (ADC) 205. -2 1 - 201142676 Parallel serial-to-serial conversion circuit 2 04 converts the output voltage of a plurality of operational amplifiers AMP1 as parallel signals taken by the sample-and-hold circuit (SH) 203 into a serial signal in response to a control signal, and Analog-to-digital conversion circuit (ADC) 2 05 supply. The analog-to-digital conversion circuit (ADC) 205 converts the serial signal supplied from the parallel serial conversion circuit 206 into a digital signal, and outputs it as a digital signal output Vout. Next, the operation of the liquid crystal display device shown in Figs. 1 to 7 will be described. First, the display operation of the liquid crystal display device will be described. Since the display operation of this liquid crystal display device is the same as that of the conventional liquid crystal display device, it will be briefly described here. In the case of displaying an image of one screen size, a display driving circuit (not shown) sequentially supplies a high-level scanning signal 'from the gate line 1 1 1 on the upper side shown in FIG. 4 and is on the drain line 1 1 2 supplies a gray scale signal corresponding to the gray level level of the image to be displayed by the corresponding sub-pixel. When the scanning signal is at the high level, the pixel TFT - T2 of one column of the number of gate lines η 1 to which the scanning signal is high level is turned on, and the sub-pixels of the column are in a selected state. When the pixel TFT - T2 is turned on, the gray scale signal supplied from the drain line i is applied to the pixel electrode 1 & 4 via the pixel TFT - T2 in the on state.

S -22- 201142676 At this time, the voltage applied to the liquid crystal 103 by the difference between the pixel electrode voltage generated at the pixel electrode 114 and the common voltage applied to the common electrode is applied to the corresponding sub-pixel. Perform image display. Further, the voltage applied to the liquid crystal 101 is held until the next time a gray scale signal is applied, and is held by the storage capacitor formed by the capacitance line 151 and the pixel electrode 114. Next, the action of using the TFT sensors TO, T1 as a touch sensor will be described. Fig. 8 is a view showing the light-current characteristics of the a-SiTFT. In the initial state, the register is shifted from the column direction 20 1 1 without applying a voltage. In this state, all the TFT sensors in the display area become non-selected, and in each TFT sensor, it corresponds to the selection. The state of the state of the bungee current does not flow. In the a-Si TFT, as shown by the light-current characteristic shown in Fig. 8, actually, even if the TFT sensor is in a non-selected state (for example, Vgs = 0 [V]), in each TFT sensor There are also some bungee currents flowing. However, the drain current in this non-selected state is much smaller than the drain current in the selected state (for example, Vgs = 3 to 5 [V]). Next, all of the TFT sensors start from the initial state of the non-selected state, and the column direction shift register 2011 first makes the gate terminal G corresponding to the divided region 1 1 of the first column shown in FIG. The connected TFT sensors TO and T1 become selected states, and the voltage of the gate terminal G1 is set to the voltage at which the TFT sensors T 0 and T 1 are turned on. -23- 201142676 On the other hand, the column direction shift register 201 1 changes the voltage of the gate terminals G2 to G 5 to a voltage at which the TFT sensors TO and T1 are not turned on. When all the TFT sensors TO and T1 included in the divided region 1 1 of the first column to which the gate terminal G 1 is connected are selected in the column direction shift register 2 0 1 1 , the sense of each TFT is obtained. The detectors TO and T1 output a drain current corresponding to the contact state of the selected state and the finger. Thereby, it can be determined whether or not the finger or the like is in contact with the divided region 1 1 of the first column. In detail, with the virtual short circuit of the operational amplifier AMP 1, the drain voltage of the TFT sensor T0 becomes equal to the drain voltage of the TFT sensor T1. Here, the threshold voltage of the TFT sensor T0 is fixed to a fixed voltage 値Vd by the voltage source Vd. Therefore, the drain voltage of the TFT sensor T1 also becomes Vd. Further, the specific number of Vd is not particularly limited, for example, V d = 0 [ V ]. Further, the current Is from the fixed current 供给 supplied from the current source CS flows from the TFT sensor TO to the voltage Vss as the drain current of the TFT sensor TO. The drain current Is of the fixed current 从 flows from the TFT sensor T0. Since the gate voltage and the gate voltage of the TFT sensor T0 are fixed, the source voltage of the TFT sensor TO becomes a floating state. Further, with the buffer circuit BUF, the source voltage of the TFT sensor T0 becomes equal to the source voltage of the TFT sensor T1. Therefore, the electrodes of the TFT sensor T0 and the electrodes of the TFT sensor T1 each become an equal voltage.

S -24- 201142676 In this state, when the light from the backlight 104 or the external light does not enter the photoelectric conversion portion 14 of the TFT sensor T1, that is, there is a finger or the like in the divided region 1 1 of the first column. In the case of the contact, the drain current IdsO as the dark current in the TFT sensor T1 becomes the current 相等 equal to the dark current Is flowing in the TFT sensor T0. This relationship is the case where the TFT sensor T0 and the TFT sensor T 1 are the same size. In the case where the TFT sensor TO and the TFT sensor T 1 are of different sizes, the drain current IdsO as the dark current in the TFT sensor T1 becomes Ids0 = Isx (S1 / S0). Here, S1 is a 将 which divides the channel width of the TFT sensor T1 by the channel length, and S0 is 値 which divides the channel width of the TFT sensor TO by the channel length. On the other hand, in the case where light from the backlight 104 or external light is incident on the photoelectric conversion portion 14 of the TFT sensor T1, that is, in the case where there is no finger or the like in the divided region 11 of the first column, The illuminance of the incident light increases the drain current flowing in the TFT sensor T1. When the amount of increase is Δ Ids , the drain current Ids at the time of light incident becomes Ids= IdsO + Δ Ids. In this manner, the plurality of gate currents Ids outputted from the plurality of divided regions 11 of the first column are converted into voltages in parallel by a plurality of current-voltage converting circuits composed of the operational amplifier AMP1 and the resistor Rf. When the resistance 値 of the resistor Rf is Rf, the output voltage of each operational amplifier AMP1 becomes an IdsxRf (when Vd = 0). In this manner, a plurality of output voltages from each of the plurality of operational amplifiers AMP1 are held in parallel by the SH circuit 203 as parallel signals. -25- 201142676 The plurality of output voltages held by the SH circuit 203 are converted into a serial signal by the parallel serial conversion circuit 204, and input to the ADC 205. Then, the voltage converted into the serial signal is sequentially input to the ADC 205, and is converted into a digital signal, and the digital signal output Vout is input to a control circuit of a touch sensor (not shown). The control circuit of the touch sensor determines whether the digital output Vout of the digital signal corresponds to the divided area 1 1 of the first row of the first column, and the digital output Vout of the digital signal corresponds to IdsO or corresponds to Ids, and it is determined whether or not the divided area 1 1 of each row of the first column has contact with a finger or the like. After the determination of whether or not there is contact with a finger or the like in each of the divided regions 1 1 of the first column is completed, the column direction shift register 2 0 1 1 is to make the gate terminal corresponding to the divided region 1 1 of the second column. The TFT sensors T 0 and T 1 to which G 2 is connected become a selected state, and the voltage of the gate terminal G2 is set to a voltage at which the TFT sensors TO and T1 are turned on. On the other hand, the column direction shift register 2011 sets the voltages of the gate terminals G1, G3 to G5 to the non-conduction level of the TFT sensors T0 and T1. In the same manner as in the first column, after the determination as to whether or not there is contact with a finger or the like in each of the divided regions 1 of one column is completed, the column direction shift register 20 1 1 will be gated corresponding to the divided region 11 of the next column. The voltage of the terminal is set to the voltage at which the TFT sensors TO and T 1 are turned on. By performing the above operations on each of the divided regions 1 1 of all the columns, it is determined whether or not there is contact of a finger or the like in the entire area of the display region. Here, the advantages of the embodiment will be described.

S -26- 201142676 As shown in the above description, in the present embodiment, the TFT sensor TO is selected in accordance with the column unit of the divided region ii with respect to the TFT sensor T0 and the TFT sensor T1 arranged in two dimensions. With the TFT sensor, a voltage signal corresponding to the drain current of the TFT sensor Τ1 in each divided region 11 is taken in. The drain current of the TFT varies depending on the illuminance of the light incident on the photoelectric conversion portion including the semiconductor layer, and also changes over time or temperature. However, in the present embodiment, the current 作为 which is the dark current moving drain current Id s0 in the drain current of the T F T sensor T1 can be set to the fixed current 对应 corresponding to the current Is supplied from the current source CS. As shown above, the TFT sensor T0 and the TFT sensor T1 in a pair of sensors are arranged in close proximity. Therefore, it can be considered that the two are the same temperature conditions. Therefore, the influence of the temporal change or the temperature change of the TFT sensor T0 or the TFT sensor T1 causes a change in the drain voltage of the TFT sensor T0 or the TFT sensor T1. In this way, the drain current Ids flowing in the TFT sensor T1 becomes only dependent on the illuminance. Thus, a voltage signal that suppresses the influence of the temporal change or temperature change of the TFT sensor T0 or the TFT sensor T 1 can be taken. Further, in the present embodiment, when there is a contact with a finger or the like in each divided region 1 1 , the drain current flowing through the TFT sensor T1 becomes IdsO. Moreover, this 値 is not affected by the intensity of light from the backlight 1 〇 4 or external light. Therefore, the determination that the contact with the finger or the like can be stably performed is not affected by the change of the light from the backlight 104 or the external light. -27- 201142676 Further, in the present embodiment, the column direction shift register 201 1 of the scan driver 201 sets the TFT sensors TO and T1 of one division of the divided area 1 to the selected state at the same time. Therefore, the output voltage (voltage signal) corresponding to the drain current is output from the operational amplifier AMP1 as a parallel signal. In the present embodiment, by taking this parallel signal as a serial signal, the signal taken into the TF sensor can be driven in sequence. Therefore, for example, it is possible to shorten the time required for the determination of the presence or absence of the contact of the finger or the like over the entire area of the display area as compared with the configuration in which each sensor is sequentially determined to have contact. Further, in consideration of the case where the light sensing device of the present embodiment is used as a touch sensor for determining the contact of an unmanned finger, it is not necessary to determine the presence or absence of contact in units of minute areas such as display pixel units, as long as It is sufficient to determine whether or not there is contact with each other in a region where the number of squares is larger than one pixel. Therefore, as shown in FIG. 5, the display area is divided into a plurality of divided area 11 units including a plurality of display pixels, and the presence or absence of contact is determined in accordance with the column unit of the divided area 1 1 . A touch sensor that determines the presence or absence of finger contact. In this case, the sensor gate line 1 2 1 or the sensor drain line 1 22 and the sensor source line 1 23 can be shared in the column unit of the divided area 1 1 . Therefore, it is related to the reduction in the number of terminals of the sensor driver 20. Further, by extracting the drain current in accordance with the unit of the divided region 11, it is possible to take out a large drain current without amplifying the drain current. Therefore, it is possible to reduce the possibility of misjudgment in the presence or absence of contact determination.

S -28- 201142676 Further, in the present embodiment, the sensor gate lines 1 2 1 are shared by the TFT sensors T 0 and T 1 arranged in the same column, and the TFTs arranged in the same row are used. The sensors T 0, T 1 share the sensor drain line 1 2 2 and the sensor source line 23 . With this configuration, the number of lines of the sensor gate line 1 2 and the sensor source line 1 23 can be set to the minimum required. Further, the present embodiment is a configuration of an optical sensing device which is suitable for two-dimensionally arranging a plurality of thin film transistor photosensors using a-SiTFT as described below. That is, as shown in the light-current characteristic of the a-Si TFT in Fig. 8, the bucker pole in the case where the gate voltage is set to negative is used in a plurality of thin film transistor type photosensors using a-Si TFT. The rate of change of the current phase contrast is greater than the rate of change of the gate current contrast when the gate voltage is set to be positive. Therefore, in the case where a TFT is used as a thin film transistor photosensor, it is generally driven in a state where a negative gate voltage is applied to the TFT. In the case of using such a photosensor alone, it is possible to prevent the configuration from being driven in a state where a negative gate voltage is applied. However, in the present embodiment, a plurality of photosensors are two-dimensionally arranged, and it is determined whether or not there is contact with a finger or the like in each photosensor, and wiring for each photosensor is minimized. In this case, in the above configuration in which the gate voltage is set to a negative voltage, a defect as described below occurs. That is, in the present embodiment, in order to reduce the number of wirings for each photosensor, a configuration is adopted in which a plurality of TFTs in the same row are connected to the common sensor dipole wires 1 22 -29 to 201142676. In this case, a negative gate voltage is applied at the time of selection, and the TFT is used as a thin film transistor photosensor, and when the gate voltage is set to zero when not selected, as shown in FIG. The current of the drain current flowing when a negative gate voltage is applied to the TFT is not greatly changed according to the absolute 値 of the negative gate voltage. Therefore, irrespective of the selected state or the non-selected state, the TFTs belonging to all of the same row always have substantially the same minimum gate current, and it is difficult to determine whether or not there is contact according to the column unit of the photosensor. In contrast, in the present embodiment, a positive gate voltage (Vgs = 3 to 5 [V]) is applied at the time of selection. The gate voltage is set to zero when not selected. In this case, the change in the current 値 of the drain current flowing in the TFT when the gate voltage is set to zero and the positive voltage is larger than the change in the current 値 in the case where the gate voltage is set to zero and a negative voltage. . That is, in the selected state and the non-selected state, the current 値 of the drain current flowing in the TFT becomes distinctly different. Therefore, the presence or absence of contact determination can be performed in accordance with the column unit of the divided area. However, when a positive gate voltage is applied, the above-described influence of the above-described change in temperature or temperature change becomes large when the TFT is used. However, in the present embodiment, by the above configuration, it is possible to suppress the influence of the temporal change or the temperature change. Therefore, according to the present embodiment, it is possible to accurately determine the presence or absence of contact in accordance with the column unit of the divided region 1 1 under the reduced number of wirings. Further, according to the present embodiment, in the case where the pixel TFT T2 constituting the display pixel is composed of an a-Si TFT, the pixel TFT-T2 and the TFT sensor TO, T1 constituting the photo sensing device can be manufactured by the same process. It can also reduce manufacturing costs.

S • 30- 24 201142676 Touching the base mask 0 1 In the face of the mask, the light-shielding wall 126 is provided in such a manner as to surround the photoelectric conversion unit 1 of the TFT sensor T1, and the finger is equally connected to the divided area u. At this time, the photoelectric conversion portion 124 of the TFT sensor Τ1 can be completely shielded from light. Further, since the TFT sensor portion can be completely covered by the light shielding film 142, when the display panel 1 is observed, a periodic structure other than the display pixel can be made. In the above embodiment, the light shielding wall 126 is formed on the TFT panel 101. However, when the light shielding wall 126 is in contact with the color filter substrate 102 with a finger or the like, the photoelectric conversion portion 124 of the TFT sensor T1 may be lighted. Therefore, the light shielding wall 126 is not limited to the configuration provided on the TFT substrate 1. Fig. 9 is a view showing a modification of the light shielding wall. For example, as shown in Fig. 9, the light shielding wall 126 may be disposed at a position on the color filter substrate 1A2 surrounding the photoelectric conversion portion 124 of the TFT sensor T1. In this case, as shown in Fig. 9, the light valve is formed in a gap between the lower end of the optical wall 126 and the TFT substrate 101. Further, the light-shielding wall 126 is shown as a thick film having a sufficient thickness in Fig. 1, but a relatively thin film as shown in Fig. 9 may be used in the case of using a metal material having a relatively high light-shielding property. . Further, the circuit configuration of the sensor driver 20 shown in Fig. 7 is also an example and can be appropriately changed. For example, in the detecting driver 202 of Fig. 7, although the current source CS is a current sinking current source, it is not limited thereto. 201142676 The first diagram shows a circuit diagram of a modified example of the sensor driver 20 of the present embodiment. That is, as shown in Fig. 10, the current source C S may be a current discharge type current source that supplies the current Is in the direction toward the source terminal S m - 0 . With this configuration, the same effects as those of the above-described seventh embodiment can be obtained. When the current source CS is a current discharge type current source, the circuit configuration shown in FIG. 7 is changed to connect the other end of the current source CS to the voltage source of the supply voltage Vdd as shown in FIG. The 汲 terminal Dm — 0 for the TFT sensor T0 is connected to a voltage source of the supply voltage Vs (Vs < Vdd). In the above embodiment, an example in which a touch sensor of a thin film transistor type photosensor is built in a liquid crystal display device is shown. However, the method of the present embodiment is not limited to the configuration built into the liquid crystal display device, and can be applied to other flat panel display devices. For example, it can also be applied to an organic EL display device. In the first embodiment, the cross-sectional structure of the same position as that of the first embodiment is shown in the case where the display panel 10 of the optical sensing device according to the first embodiment of the present invention is configured as an organic EL display device. Fig. 12 is a view showing a detailed circuit configuration of a portion of one of the divided regions of the display panel 10 shown in Fig. 11 corresponding to the portion A of the fifth drawing. In Fig. 11, a display panel 10 constituting an organic EL display device has a glass substrate 301 and a sealing glass substrate 312. Glass substrate 3 0 1 and dense

S -32- 201142676 The sealing glass substrates 302 are sealed at a predetermined interval by a sealing member (not shown). The anode 3 of the organic EL element corresponding to the sub-pixels of the respective colors is formed on the upper surface of the glass substrate 301. Then, on the anode 311, for example, an organic EL light-emitting layer 313 including an electron transport layer and a hole transport layer is laminated. Further, a cathode 312 made of, for example, ITO or the like is provided on the organic EL light-emitting layer 313. Further, the sub-pixels of the respective colors R, G, and B of the organic EL display element as the optical element are insulated by, for example, the insulating layer 3 15 . Further, the transistor T3 shown in Fig. 12 (only the drain electrode 314 is shown in Fig. 11) and the above-described TFT sensors TO and Τ1 are provided in the insulating layer 3 15 . The gate electrode 314 of the transistor T3 is formed to have a data line (data input line) and extends toward the row direction of the display panel. Further, the source electrode of the transistor T 3 is connected to the organic EL display element via the transistor T4 or the capacitor C. Further, the gate electrode of the transistor T 3 is formed to have a selection line (pixel selection line) 3 1 8 and extends in the column direction of the display panel. Further, the light shielding walls 3 16 are formed on the insulating layer 3 15 . The sub-pixels corresponding to the respective colors of RG B are distinguished by the light-shielding wall 3 16 . In the region between the light-shielding walls 316 of the TFT sensor T0, in order to shield the photoelectric conversion portion of the TFT sensor T0, for example, a light-shielding ink 31 composed of a polymer material having a high light-shielding property is applied by a nozzle coating method. 7. Further, the high light-shielding polymer material does not contain water. -33- 201142676 In Fig. 11, although the light shielding wall 316 is illustrated as being larger than the organic EL display element, it is illustrated for convenience of illustration, in fact, the organic EL display element is larger than the light shielding wall 316. Further, a reflective film 331 such as an aluminum thin film for injecting light into the TFT sensor T 1 is formed in a region facing the TFT sensor T1 on the lower surface of the sealing glass substrate 302. The light shielding wall 316 determines its height in such a manner as to form a predetermined gap (light valve) between the reflection film 331 of the sealing glass substrate 302. This height corresponds to the length in the direction perpendicular to the plane direction of the upper surface of the glass substrate 301. By having such a configuration in advance, the TFT sensor T1 is opened in a state in which the user's finger or the like does not press the sealing glass substrate 302. In this state, the photoelectric conversion portion of the TFT sensor T 1 is exposed, and light emitted from the organic EL display element in the vicinity of the TFT sensor T1 or light from the outside of the display panel 1 is incident on the TFT via the light valve. The photoelectric conversion unit of the detector T 1 . On the other hand, when the pressure of the downward pressure is applied to the sealing glass substrate 302 by the user's finger or the like, a part of the sealing glass substrate 302 is bent, and the light valve is closed. In this state, the photoelectric conversion unit of the TFT sensor T1 is in a light-shielded state. The circuit configuration shown in FIG. 12 has a configuration of the circuit shown in FIG. 6 'the pixel TFT-T2 constituting each sub-pixel and the liquid crystal display element. It is replaced by a pixel composed of transistors T3 and T4, a capacitor C, and an organic EL display element. Because about TFT sensor TO, T1, it is with Figure 6

S -34- 201142676 The circuit shown has the same structure. Therefore, as the drive circuit for driving the TFT sensors TO, T1, the same configuration as that of the sensor driver 20 shown in Fig. 7 or Fig. 10 can be applied. Even in the case of the organic EL display device as described above, the TFT sensor TO, T1 and the sensor driver 20 are connected as shown in Fig. 12, and the liquid crystal display device described above can be obtained. The same effect. <Second Embodiment> Next, a second embodiment of the present invention will be described. Fig. 1 is a front elevational view showing an example of a display panel 1 including a light sensing device according to a second embodiment of the present invention. The display face shown in Fig. 13 is a liquid crystal display device constituting a built-in thin film transistor type photo sensor. The same constituent elements as those in Fig. 4 are denoted by the same reference numerals, and the description is omitted or simplified. The display panel 10 of the present embodiment has a plurality of color filters 1 4 including three colors of red (R), green (G), and blue (B), like the display panel 10 of the first embodiment. A plurality of display pixels corresponding to the three sub-pixels are arranged in two dimensions. The optical sensing device of the present embodiment has a thin film transistor photosensor composed of TFT sensors TO and T1 as in the first embodiment. However, in the light sensing device of the present embodiment, the magnitudes of the TFT sensors TO and T1 are different. The number of the TFT sensors T 0 and T1 disposed on the display panel 10 is different. Further, in the photo sensing device of the present embodiment, the arrangement of the sensor gate lines 1 2 1 is different. -35- 201142676 A plurality of gate lines 1 1 1 and a plurality of sensor gate lines 1 2 1 are arranged along the column direction of the TFT substrate 101 (X direction shown in Fig. 13), and a plurality of bungee Line 1 1 2, the sensor drain line 1 22 and the sensor source line 1 23 are arranged along the row direction of the TFT substrate 101 (the γ direction shown in FIG. 13). Although not shown in the drawings, the cross-sectional structure of the display panel 1 viewed in the π-direction shown in Fig. 13 is the same as the cross-sectional structure shown in Fig. 1. In the present embodiment, as shown in Fig. 3, two display pixels adjacent in the row direction (γ direction) are arranged to constitute one display pixel group, and a plurality of display pixel groups are two-dimensionally arranged. Further, a TFT sensor T0 or a TFT sensor T 1 is alternately arranged in the column direction in a region arranged between the display pixel groups adjacent in the column direction. As shown in Fig. 3, each of the sensor gate lines 1 2 1 is disposed in an empty area between the display pixels of each of the two columns sandwiched by the two gate lines 1 1 1 . The length of the row direction of each of the TFT sensors TO, T1 is set to be the same length as the length of the row direction of the display pixel group or a length shorter than the length of the display pixel group, that is, the length of the row direction of one display pixel group. About 2 times the length of the same length or a shorter length than it. Therefore, the degree of resolution of the photosensor is equal to that of the first embodiment. In the present embodiment, the TFT sensors T0 and T1 are arranged as described above, and the number of the sensor gate lines 1 2 1 is half to that of the first embodiment. Therefore, the aperture ratio of each display pixel can be increased.

S-36- 201142676 In order to configure the TFT sensors TO and ΤΙ in this manner, as shown in FIG. 13, two pixel pixels adjacent to each other in the row direction of each display pixel group, pixel TFT — Τ 2 and gate lines 1 1 1 is arranged such that the relative sensor gate lines 1 2 1 are in mirror image relationship with each other. That is, as shown in FIG. 13, each of the display pixels arranged in two columns having display pixels constituting the display pixel group adjacent in the row direction is displayed along the display panel 1 across the display pixels of the two columns. Each gate line 111 is disposed in the column direction of 0. Further, in each of the two display pixels of each display pixel group, the pixel TFT_T2 is disposed on the side close to each of the gate lines 1 1 1 and is connected to the corresponding gate line 11 1 . In other words, when the display panel 10 is viewed from the front, the +Y direction side is the upper side, and the -Y direction side is the lower side, the display pixels of the two columns sandwiched by the two gate lines 1 1 1 are displayed. The display pixel on the upper side is connected to the adjacent gate line 11 1 from the upper side via the pixel TFT _ T2, and the pixel TFT -T2 is disposed on the upper side of the pixel electrode 1 1 4 and becomes the lower side. The display pixel 'is connected to the adjacent gate line 1 1 1 from the lower side via the pixel TFT T2' to place the pixel TFT - T2 on the lower side of the pixel electrode 1 14 . Fig. 14 is a view showing the arrangement of the gate line n丨, the sensor gate line 121, and the capacitance line 151 of the present embodiment. These wirings are formed on the same layer of the TFT substrate 110. As described above, each of the gate lines 1 1 1 is disposed in the column direction for every two columns of the display pixels in a position sandwiching the display pixels of the two columns. -37- 201142676 That is, the gate line 1 1 1 is disposed in the upper position of the display pixel in the first column, the lower position of the display pixel in the second column, the upper position of the display pixel in the third column, and the fourth column. The lower side position of the display pixel.....the upper side position of the display pixel in the (N-1)th column and the lower side position of the display pixel in the Nth column. The gate line 1 1 1 is disposed in the second column so as to be close to the two gate lines 11 1 disposed at the lower side of the display pixel of the second column and the upper side of the display pixel of the third column. The area between the display pixel and the display pixel of the third column. Similarly, it is placed on the 4th near the two gate lines 1 1 1

The area between the display pixel of the column and the display pixel of the 5th column..... the area between the display pixel of the (N-2)th column and the display pixel of the (N-1)th column. Each of the sensor gate lines 1 2 1 is disposed at a position between display pixels of each of the two columns of display pixels. The sensor gate lines 1 2 1 are respectively disposed between the display pixels of the first column and the display pixels of the second column, and the positions between the display pixels of the third column and the display pixels of the fourth column... The position between the display pixel of the (N-1)th column and the display pixel of the Nth column. Further, as described above, the sensor gate line 1 2 1 also has the gate electrode of the TFT sensor. The sensor gate line 1 2 1 is adjacent to each display pixel group in the column direction. The row direction extends and constitutes the gate electrode of the TFT sensor. In the present embodiment, as shown in Fig. 14, the capacitance line 155 is also arranged to have a mirror image relationship with respect to each of the photosensor groups. As shown in Fig. 14, the capacitance line 1 5 1 is pulled in such a manner that one display pixel group is opposed to the peripheral portion of each display pixel via the sensor gate line 121.

S-38- 201142676 By configuring the gate line η 1 , the sensor gate line 121 and the capacitor line 1 5 1 in the above manner, the gate line 1 1 1 , the sensor gate line 1 2 1 and The capacitance lines 1 5 1 are all disposed so as not to cross each other and not to be electrically connected to each other. Further, a TFT sensor having a light receiving area of about twice as large as that of the first embodiment corresponding to one display pixel group is driven by one sensor gate line 1 2 1 . In this manner, as compared with the case where one TFT sensor is provided corresponding to one display pixel as in the first embodiment, the number of lines of the sensor gate line 1 2 1 can be reduced to half, and thus, In the display panel 10, the area occupied by the plurality of sensor gate lines 1 2 1 can be reduced, and the aperture ratio of each display pixel can be increased. Further, in the present embodiment, the gate line 1 1 1 and the sensor gate line 1 2 1 are disposed so as not to be close to each other. Thus, interference between the signal voltage applied to the gate line 1 1 1 and the signal voltage applied to the sensor gate line 1 2 1 can be suppressed. Therefore, the influence of the driving of the thin film transistor type photo sensor on the display state of each display pixel can be suppressed, and the detection of the contact position of the driving of each display pixel to the user of the thin film transistor type photo sensor can be suppressed. Impact. Fig. 15 is a front elevational view showing a state in which the light-shielding film 142 is formed on the color filter substrate 102 of the display panel 10 of the present embodiment. As described above, the TFT sensor of the present embodiment is a sensor that detects reflected light of the backlight 104 in the plane of the display panel 10. -39- 201142676 Since it is not necessary to inject external light into the TFT sensors TO, Τ 1, as shown in Fig. 15, the portion of the TFT sensor TO, Τ1 can be completely covered by the light shielding film 142. Therefore, in the case where the display panel 10 is observed, a state in which the periodic structure other than the display pixels is not seen is obtained. If you see a periodic structure other than the display pixels, it will have an adverse effect on the picture quality. In the present embodiment, such an adverse effect on image quality can be suppressed. In the manner shown in Fig. 15, the gate line 1 1 1 is arranged in a mirror image relationship with respect to the display pixel group including the two display pixels arranged adjacently in the row direction. Then, the sensor gate line 1 2 1 is disposed in an empty area generated between the display pixel groups, and the TFT sensor having the light receiving area corresponding to the two parts of the display pixel is sensed and sensed. The gate line 1 1 1 is connected. Therefore, the number of the TFT sensors TO, T1 and the sensor gate line 121 is half that of the first embodiment. Therefore, the opening ratio of the display pixels can be improved as compared with the first embodiment. Next, the circuit configuration of the display panel 10 of the present embodiment will be described. In the present embodiment, the drive circuit for driving the thin film transistor photosensor built in the display panel 10 can be applied to the same configuration as the drive circuit of the first embodiment. Fig. 16 is a view showing a detailed circuit configuration of a portion of one divided region 11 corresponding to the portion A of Fig. 5 of the display panel 10 shown in Fig. 13.

S -40- 201142676 § The outer part of T0 and T1 pole line 1 2 1 is divided by GL5 and the sensory bungee line, and is connected with a shared bungee line sensor and one: use, and share汲 Connect. The source line is divided into one: and the common source line is as shown in Figure 16. The TFTs in the same column are sensed! The sensor gate lines 1 2 1 are shared. The shared sensor senses that a plurality of strips corresponding to one divided area 1 1 are shared in the display area and connected to the common gate line GL5. The gate terminal G5 of the common gate detector driver 20 is connected. Further, the sensing 1 22 of the TFT sensors T0 arranged in the same row is shared. The shared sensor drain line 1 22 is connected to the plurality of areas 1 1 by a common set drain line (first sensor drain line) DL 70 outside the display area. On the other hand, the common DL 70 is connected to the drain terminal D7-0 of the sensor driver 20, and the pole line 12 2 of the TFT sensor T1 arranged in the same row is shared. The shared sensor drain line 1 22 is divided into a plurality of strips corresponding to the shared drain line (second sensor drain line) DL71 outside the display area. The polar line DL71 and the drain terminal D7-1 of the sensor driver 20, in turn, the sensing 1 2 3 of the TFT sensor T0 disposed in the same row are shared. The shared sensor source line 1 2 3 is connected to the shared source line (first sensor source line) SL70 outside the display area by a plurality of lines corresponding to the area 1 1 . Further, the common SL70 is connected to the source terminal S7-0 of the sensor driver 20, and the sensor source line 231 of the TFT sensor T1 disposed in the same row is shared. The shared sensor source line 1 23 is shared with a plurality of divided areas 1 1 outside the display area, and is connected to the 201142676 shared source line (2nd sensor source line) SL71. . Further, the common source line SL70 is connected to the source terminal S7-1 of the sensor driver 20. The configuration of the display panel 1A shown in Fig. 13 shows a case where two display pixels arranged adjacent to each other in the row direction are used as one display pixel group. However, the present invention is not limited to this configuration. Alternatively, an even number of display pixels larger than 2 adjacent in the row direction may be arranged as one display pixel group. In this case, the sensor gate line 1 2 1 is disposed between display pixels at positions where an even number of display pixels arranged in the row direction constituting one display pixel group are equally divided in the row direction. Further, the lengths of the respective TFT sensors TO and T1 in the row direction are set to be substantially equal to the length of one display pixel group in the row direction. ‘For example, a case where four display pixels arranged adjacent in the row direction are arranged as one display pixel group. The sensor gate line 1 2 1 is disposed between the display pixels of the second column and the third column in the display pixel group. Further, the lengths of the respective TFT sensors TO and T1 in the row direction are set to be substantially equal to the lengths of the four display pixels in the row direction. In this case, the aperture ratio of the display pixels can be further increased. <Third Embodiment> Next, a third embodiment of the present invention will be described. Fig. 17 is a front elevational view showing an example of a display panel 10 including a light sensing device according to a third embodiment of the present invention.

S-42-201142676 The display panel 10 shown in Fig. 17 is a liquid crystal display device constituting a built-in thin film transistor photosensor. Here, the same components as those in Fig. 4 are denoted by the same reference numerals, and Omit or simplify the description. Similarly to the display panel 10 of the first and second embodiments, the display panel 10 of the first embodiment has a plurality of color filters including three colors of red (R), green (G), and blue (B). The display pixels of the three sub-pixels corresponding to the photodetector 141 are arranged in two dimensions in a plurality of display pixels. Further, in the light sensing device of the present embodiment, as in the first embodiment, a thin film electromorphic photosensor composed of TFT sensors TO and T1 is provided. However, in the light sensing device of the present embodiment, the arrangement state of the TFT sensors TO and T1 in the column direction is different, and the number of the TFT sensors T0 and T1 disposed on the display panel 10 is different. Further, in the photo sensing device of the present embodiment, the arrangement of the sensor drain line 1 2 2 and the sensor source line 1 2 3 is different. The plurality of gate lines 1 1 1 and the plurality of sensor gate lines 1 2 1 are arranged along the column direction of the TFT substrate 101 (the X direction shown in FIG. 17), and the plurality of drain lines 1 1 2 The sensor drain line 1 22 and the sensor source line .1 23 are arranged along the row direction of the TFT substrate 1〇1 (the Y direction shown in FIG. 17). On the other hand, in the present embodiment, as shown in Fig. 17, the two display pixels adjacent in the column direction (X direction) are arranged to constitute one display pixel group, and a plurality of display pixel groups are two-dimensionally arranged. Further, the TFT sensor T0 or the TFT sensor T1 is disposed only in a region between the two display pixels adjacent to each other in the column direction among the display pixel groups. -43- 201142676 On the other hand, none of the regions 'TFT sensors T 0 and T 1 between the display pixel groups adjacent in the column direction are disposed. Further, a TF T sensor T 0 or a T F T sensor T 1 is alternately disposed in a region between two display pixels of each display pixel group arranged in the column direction. The sensor gate line 1 2 1 , the sensor drain line 1 2 2 and the sensor source line 123 are arranged to be connected to the TFT sensors TO, T1, the sensor trip line 1 2 2 and the sense The detector source line 1 2 3 is disposed in a region extending between the display pixel groups so as to extend in the row direction. In order to arrange the TFT sensors TO and T1 in this manner, as shown in FIG. 17, two pixel pixels adjacent to each other in the column direction of each display pixel group, the pixel TFT_T2 and the drain line 1 1 2 are matched. It is assumed that the relative sensor drain line 1 22 and the sensor source line 1 2 3 are in a mirror image relationship with each other. In other words, when the display panel 1 看 is viewed from the front, and the +X direction is set to the right side and the -X direction is set to the left side, the display pixels on the left side of the two display pixels of each display pixel group are passed through the pixels from the left side. The TFT-T2 is connected to the adjacently disposed dipole line 1 1 2, and the pixel TFT - T2 is disposed on the left side of the pixel electrode 1 1 4 . The display pixel on the right side is provided on the right side of the pixel electrode 1 1 4· in order to be connected from the right side via the pixel TFT — T2 to the adjacent drain line 1 12 . The length of the row direction of each of the TFT sensors TO, T1 is set to be the same length as or shorter than the length of one display pixel group in the row direction. Fig. 18 is a view showing the arrangement of the gate line 1 1 1 , the sensor gate line 1 21 and the capacitance line 151 in the present embodiment.

S *44- 201142676 As shown in Fig. 18, any one of the gate line 1 1 1 , the sensor gate line 1 2 1 and the capacitance line 1 5 1 is arranged for each column of the display pixel group. The area of the display pixels of each column. In the present embodiment, the TFT sensor is disposed only between the display pixel groups including the two display pixels arranged adjacent in the column direction, and the drain line 1 1 2 is opposed to the TFT sensor or the sensor. The drain line 1 22 and the sensor source line 1 2 3 are in a mirror relationship configuration. Therefore, the number of the TFT sensors TO, T1, the sensor drain line 1 22, and the sensor source line 1 2 3 is half that of the first embodiment. Therefore, the aperture ratio of the display pixel can be improved more than in the first embodiment. Here, the configuration of the display panel 10 of the present embodiment shown in Fig. 7 shows a case where two display pixels adjacent in the column direction are arranged as one display pixel group. However, the present invention is not limited to this configuration. An even number of display pixels larger than two adjacent in the column direction may be arranged as one display pixel group. In this case, the TFT sensors T 0, T 1 , the sensor drain line 1 2 2 and the sensor source line 1 23 are disposed in an even number arranged in the column direction which will constitute one display pixel group. The display pixels are displayed between pixels in the position where the column direction is equally divided. For example, in the case where four display pixels arranged adjacent in the column direction are used as a display pixel group, the TFT sensor, the sensor drain line 1 22, and the sensor source line 1 23 are disposed on the display. Between the 2nd row and the 3rd row of display pixels in the pixel group. -45- 201142676 In this case, the aperture ratio of the display pixels can be further increased. <Fourth Embodiment> Next, a fourth embodiment of the present invention will be described. Fig. 19 is a front elevational view showing an example of a display panel 1 including a photo-sensing device according to a fourth embodiment of the present invention. This embodiment has a configuration in which the second embodiment and the third embodiment are combined. The display panel 10 shown in Fig. 19 is a liquid crystal display device constituting a built-in thin film transistor type photo sensor. Here, the same components as those in the first and third embodiments are denoted by the same reference numerals and will not be described. Similarly to the display panel 10 of the first and second embodiments, the display panel of the first embodiment has a plurality of color filters including three colors of red (R), green (G), and blue (B). The display pixels of the three sub-pixels corresponding to the photodetector 141 are arranged in two dimensions in a plurality of display pixels. The optical sensing device of the present embodiment has a thin film transistor photosensor composed of TFT sensors TO and T1 as in the first embodiment. However, in the photo sensing device of the present embodiment, the magnitudes of the TFT sensors TO and T1 are different. Further, in the light sensing device of the present embodiment, the arrangement state in the column direction is different, and the number of TFT sensors TO and τ which are disposed on the display panel 10 is different, and the sensor gate line 1 is different. 2 1. The configurations of the sensor drain line 122 and the sensor source line 123 are different. In the present embodiment, as shown in Fig. 9, four display pixels arranged in two rows adjacent to two adjacent columns constitute one display pixel group, and a plurality of display pixel groups are two-dimensionally arranged.

S-46-201142676 However, the TFT sensor T0 or the TFT sensor T1 is disposed only at a position where each display pixel of each display pixel group is equally divided in the column direction. On the other hand, none of the regions 'T F T sensors Τ 0, Τ 1 between the respective photosensor groups adjacent in the column direction are provided. The length of the direction of the T F Τ sensor Τ 0 or T F Τ sensor Τ 1 is set to be substantially equal to the length of the display pixel group in the row direction. The TFT sensor T0 or the TFT sensor T1 is alternately disposed at positions where the display pixels of the respective display pixel groups arranged in the column direction are equally divided in the column direction. Therefore, the number of TFT sensors TO and T1 is 1/4 of that of the first embodiment, the sensor gate line 1 2 1 , the sensor drain line 1 22, and the sensor source line 1 The number of 2 3 is half that of the first embodiment. Therefore, the aperture ratio of the display pixel can be further improved as compared with the second and third embodiments. Further, in the present embodiment, a plurality of display pixels arranged in adjacent even-numbered columns of more than 2 and adjacent even-numbered rows of two may be used as one display pixel group. In this case, the TFT sensor ΤΟ, Τ 1, the sensor drain line 1 22 and the sensor source line 123 are disposed in a plurality of apparent 7K pixels constituting one display pixel group, and are equally divided in the column direction. The position of the display pixels. In this case, it is possible to mention the aperture ratio of the pixel. <Fifth Embodiment> Next, a fifth embodiment of the present invention will be described. This embodiment shows another embodiment applicable to the sensor driver 20 of the first to fourth embodiments. -47- 201142676 In the first embodiment, as shown in Fig. 7, the source voltage of the TFT sensor T0 and the source voltage of the TFT sensor T1 are made equal by the buffer circuit BUF. In contrast, if the configuration of the present embodiment is employed, the same effect as the circuit shown in Fig. 7 can be obtained even without the buffer circuit B U F '. Fig. 20 is a view showing the outline of the division of the display region in the fifth embodiment of the present invention. Fig. 21 is a view showing the configuration of a detailed circuit of the portion A' in Fig. 20. Fig. 2 is a circuit diagram showing an example of the circuit configuration of the sensor driver 20 of the present embodiment. Here, the same constituent elements as those in FIGS. 5 to 7 are denoted by the same reference numerals, and the description thereof will be omitted or simplified. In the first embodiment, as shown in FIG. 5, the sensor source line 1 23 of the TFT sensor T0 and the sensor source line 1 23 of the TFT sensor T 1 are individually connected to the sensor. The drive 20 is connected. In contrast, in the present embodiment, as shown in FIG. 2 and FIG. 2, the sensor source line 123 of the TFT sensor T0 and the sensor source line of the TFT sensor T 1 are formed. 1 2 3 is shared and connected to the sensor driver 20. Further, as shown in Fig. 21, the sensor gate lines 1 2 1 of the TFT sensors TO and T 1 arranged in the same column are shared, and further, the shared sensor gate lines 1 2 1 A plurality of strips corresponding to one divided area 1 1 are shared outside the display area and connected to the common gate line GL5. The common gate line GL5 is connected to the gate terminal G5 of the sensor driver 20.

S -48- 201142676 Further, the sensor dipole lines 1 2 2 of the TFT sensors τ 配置 arranged in the same row are shared. Further, the shared sensor dipole line 1 2 2 is shared with the plurality of divided regions 1 1 in the outside of the display region, and is shared with the drain line (the first sensor bungee line) ) DL 7 0 connection. The shared drain line DL70 is coupled to the drain terminal D7-0 of the sensor driver 20. The sample illuminator line 1 22 of the TF Τ sensor Τ 1 disposed in the same row is shared. Further, the shared sensor drain line 1 22 is shared with the plurality of divided regions 11 and shared with the shared drain line (second sensor drain line) DL71. . However, the shared drain line DL71 is connected to the drain terminal D7-1 of the sensor driver 20. Further, the sensor source line 123 of the TFT sensor T0 disposed in the same row is shared with the sensor source line 123 of the TFT sensor T1 disposed in the same row. Further, the shared sensor source line 1 2 3 is shared with the plurality of divided areas 1 1 outside the display area, and is connected to the common source line (shared second signal line) SL7. Further, the common source line SL7 is connected to the source terminal S7 of the sensor driver 20. The sensor driver 20 of the present embodiment shown in Fig. 22 is connected to a plurality of common source lines SLm (m = 1, 2 with respect to the sensor driver 20 of the first embodiment shown in Fig. 7). ..... 7) The plurality of source terminals Sm (m=l, 2...7) connected are different from the current source CS in a manner that does not pass through the buffer circuit BUF. -49- 201142676 The detection driver 902 of the present embodiment has a plurality of 汲-terminals and source terminals having the same number as the plurality of shared drain lines DLm and the plurality of shared source lines SLm of the display panel 1 〇 The subroutine (the example in Fig. 22 is the 汲 terminal (7x2 = 14) + the source terminal (7) = 21). a plurality of 汲 terminals connected to the drain electrode of the TFT sensor T0

Dm - 0 (m = 1, 2, ..., 7. Corresponding to Fig. 21) are each connected to the non-inverting input terminal of the operational amplifier AMP1. A voltage source supplied to the potential Vd is connected to the non-inverting input terminal. In addition, a plurality of 汲 terminals connected to the drain of the TFT sensor T1

Dm-1 (m = 1, 2, ..., 7) are each connected to the inverting input terminal of the operational amplifier AMP1. Further, a resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1. The current-voltage conversion circuit is constituted by an operational amplifier AMP1 and a resistor Rf. Further, a plurality of source terminals Sm (m = l, 2.....7) to which the plurality of source lines SLm (m = l, 2.....7) are connected are connected to the current source CS Connected at one end. The other end of the current source CS is connected to a voltage source of a supply potential ¥^(&^<¥(1). The current source CS is a voltage source that connects the current Is from the source terminal Sm connected to one end to the other end. A current sinking current source flowing in the direction in which the Vss side is pulled in. Next, the operation of the sensor driver 20 shown in Fig. 22 will be described. Fig. 23A is a pair of sensor drivers 2 of the present embodiment. An equivalent circuit diagram of the sensor circuit formed by the sensor.

S - 50 - 201142676 The second 3 B diagram is an equivalent circuit diagram of a drive circuit formed by a pair of sensors by the sensor driver 20 of the present embodiment when the current source C S is a current discharge type. Refer to the equivalent circuit diagram of Figure 23A for illustration. As shown in FIG. 23A, the source terminal of the TFT sensor T0 and the source terminal of the TFT sensor T1 are connected to one end of the current source CS. The other end of the current source CS is connected to a voltage source that supplies a potential Vss (Vss < Vd). The gate terminal of the TFT sensor T0 is commonly connected to the gate terminal of the TFT sensor T1 and is connected to a voltage source supplying the voltage Vg. The 汲 terminal of the TFT sensor T0 is connected to the non-inverting input terminal of the operational amplifier AMP1, and is connected to a voltage source that supplies the potential Vd (Vd > VSS). The 汲 terminal of the TFT sensor T1 is connected to the inverting input terminal of the operational amplifier AMP1. A resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1. The current-voltage conversion circuit is constituted by the operational amplifier AMP1 and the resistor Rf. The action of the sensor driver 20 is shifted from the column direction in the initial state. No voltage is applied to the register 2011. In this state, all of the TFT sensors in the display area are in a non-selected state, and the state in which the cathode current corresponding to the selected state does not flow. Next, from the initial state of the non-selected state of all the TFT sensors, the column direction shift register 201 1 first, in order to divide the divided area of the first column of -5 1- Γ* 201142676 shown in FIG. The TFT sensors TO and T1 connected to the gate terminal G 1 of 1 1 are set to the selected state, and the voltage Vg of the gate terminal G1 is set to the voltage of the conduction level of the TFT sensors TO and T1. On the other hand, the voltages of the gate terminals G2 to G5 are set to voltages at which the TFT sensors TO and T1 are not turned on. When all the TFT sensors TO and T1 included in the divided region 1 1 of the first column to which the gate terminal G 1 is connected are selected by the column direction shift register 2 0 1 1 , The TFT sensors TO and T1 output the state of the drain current corresponding to the contact state of the selected state and the finger. Therefore, it can be determined whether or not the finger or the like is in contact with the divided region 1 1 of the first column. In detail, with the virtual short circuit of the operational amplifier AMP 1, the drain voltage of the TFT sensor T0 becomes equal to the drain voltage of the TFT sensor T1. Here, the threshold voltage of the TFT sensor T0 is fixed to a fixed voltage 値Vd by the voltage source Vd. Therefore, the drain voltage of the TFT sensor T1 also becomes Vd. Further, the specific number of Vd is not particularly limited, for example, V d = 0 [ V ]. Further, the current IS of the current 値, which is constant by the current source CS, flows from the TFT sensor TO and the TFT sensor T1 to the voltage Vss. Moreover, since the sensor source line 123 of the TFT sensor T0 and the sensor source line 234 of the TFT sensor T1 are shared, the source voltage of the TFT sensor T0 and the TFT sensor The source voltages of T 1 become equal. Therefore, the electrodes of the TFT sensor T0 and the electrodes of the TFT sensor T1 become equal voltages, respectively. Here, the bungee that will flow in the TFT sensor T0

S -52- 201142676 The current is set to I〇, and the drain current flowing in the TFT sensor Τ1 is set to II °. In this state, the light from the backlight 104 is not incident on the photoelectric conversion portion of the TFT sensor. In the case where the contact of the finger or the like of the divided region 1 1 of the first column is made, the drain current of the TFT sensor Τ 1 is equal to the current 相等 equal to the drain current 10 of the TFT sensor T0. This drain current 10, Π is equivalent to the dark current of the TFT sensors TO, T1. Set this current to I d 0. Here, since the TFT sensor T0 and the sensing source line 1 2 3 of the TFT sensor T1 are connected in common with the current source CS, in the case where the TFT sensor and the TFT sensor T1 are the same size, Is = 10 + 11 I0 = Il = Id0 = Is/2 〇 On the other hand, in the case where the light from the backlight 1 〇 4 is incident on the photoelectric conversion portion 14 of the TFT sensor, that is, in the division of the first column In the case where the area 1 1 is in contact with a finger or the like, the drain current flowing in the TFT sensor T 1 increases in response to the illuminance of the incident light. In the case where this increase amount is Δ Ids , the gate current II of the TFT detector T1 at the time of light incident becomes 11 = IdO + Δ Ids. Here, as described above, the TFT sensor T0 and the sensor source line 1 23 of the TFT sensor are connected in common with the current source CS, and since the relationship of I 10 + 11 is maintained, the TFT sensor T0 The drain current 10 reduces the drain current 10 to 11 = IdO - Aids. T 1 has an electric concealer T0 T 1 4πρ no salty Τ 1 -53- 201142676 In this way, the plurality of 汲-pole currents II output from the plurality of divided regions 1 1 of the first column are utilized by the operational amplifier AMP1 and A plurality of current-voltage conversion circuits formed by the resistor Rf are converted into voltages in parallel. The output voltage of each of the operational amplifiers AMP1 is -IlxRf (when Vd = 0) as in the case shown in Fig. 7. As described above, the sensor driver 20 is constructed as shown in the second and second figures, and the dark current IdO in the drain current II of the TFT sensor T1 can be set to a fixed current 値. As described above, since the TFT sensor TO and the TFT sensor T 1 constituting the adjacently disposed sensor pairs are disposed in close proximity, both can be regarded as having substantially the same element temperature. Therefore, the influence of the duration change or the temperature change of the TFT sensor T0 or the TFT sensor T 1 does not change the dark current IdO in the drain current II of the TFT sensor T1. In this way, the drain current 11 of the TFT sensor T 1 is only dependent on the illuminance. Therefore, a voltage signal that suppresses the influence of the temporal change or temperature change of the TFT sensor T0 or the TFT sensor T1 can be taken. Further, in the configurations of Figs. 22 and 23A, since the buffer circuit BUF is not provided, the circuit scale of the sensor driver 20 can be made smaller than that of Fig. 7. Therefore, in the case where the display panel 1A is integrated with the sensor driver 20, the area of the sensor driver 20 can be made small. Further, the circuits shown in Figs. 22 and 23A use a current sinking current source for the current source C S but are not limited thereto.

S -54- 201142676 That is, as shown in Fig. 2 3 B, a current discharge current source can also be used. With this configuration, the same effects as those of the above-described FIG. 23A can be obtained. When the current source CS is a discharge current source, the circuit configuration shown in FIG. 23A is changed to be as shown in FIG. 23B, and the other end of the current source CS is connected to the voltage source of the supply voltage Vdd. The 汲 terminal of the TFT sensor T0 is connected to a voltage source supplied to the potential Vs (Vdd > Vs). The configuration shown in Fig. 22, Fig. 23A, and Fig. 23B shows a case where the TFT sensors TO and T1 are n-channel TFTs. However, the embodiment of the present invention is not limited to this configuration. It is also possible that the TFT sensors TO, T 1 are p-channel TFTs. Fig. 24 is a view showing a detailed circuit configuration of a portion of one divided region 11 corresponding to the A' portion of Fig. 20 corresponding to the case where the TFT sensors TO and T1 are p-channel TFTs in the present embodiment. Fig. 25 is a circuit diagram showing a configuration example of the sensor driver 20 corresponding to the case where the TFT sensor TO' T1 is a p-channel TFT in the present embodiment. Fig. 26A is an equivalent circuit diagram of a driving circuit constituted by a pair of sensor pairs by the sensor driver 20 in the case where the TFT sensors TO, T1 are p-channel TFTs. Figure 26B is an equivalent circuit diagram of the driving circuit formed by the pair of sensor pairs by the sensor driver 20 when the TFT sensor TO, T1 is a p-channel TFT, and the current source CS is a current discharge type. . -55- 201142676 In this case, it is a configuration in which the 汲 terminal is replaced with the source terminal and the source terminal is replaced with the 汲 terminal by the configuration of Fig. 20 to 23A and B. Specifically, as shown in Fig. 24, the sensor source lines 126 of the TFT sensors T0 arranged in the same row are shared, and further, a plurality of strips corresponding to one divided region 11 are outside the display area. It is shared and connected to the common source line SL70. The common source line SL70 is connected to the source terminal S7-0 of the sensor driver 20. In the same manner, the sensor source lines 1 22 of the TFT sensors T1 arranged in the same row are shared, and further, a plurality of strips corresponding to one divided area 1 1 are shared outside the display area, and The common source line S L7 1 is connected. The common source line SL71 is connected to the source terminal S7-1 of the sensor driver 20. The sensor drain line 1 23 of the TFT sensor T0 disposed in the same row is shared with the sensor drain line 1 23 of the TFT sensor T 1 disposed in the same row. Further, a plurality of stripes corresponding to one divided region 11 are shared outside the display region, and are connected to the shared drain line DL7. The common source line SL7 is connected to the drain terminal D7 of the sensor driver 20. In the detecting driver 202, the plurality of source terminals Sm-0 (m=l, 2...7) connected to the source of the TFT sensor T0 and the non-inverting input terminal of the operational amplifier AMP1 are respectively connection. A voltage source supplied to the potential Vs is connected to the non-inverting input terminal.

S -56- 201142676 The plurality of source terminals Sm - Km = l ' 2.....7) connected to the source electrode of the TFT sensor T1 are each connected to the inverting input terminal of the operational amplifier AMP1. A resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1 to constitute a current-voltage conversion circuit. Further, a plurality of 汲 terminals Dm (m = 1, 2', ..., 7) are connected to one end of the current source CS. The other end of this current source CS is connected to a voltage source that supplies a potential Vss (Vss < Vd). The current source CS is a current sinking current source in which the current Is flows from the one end of the drain terminal Dm connected to the other end to the voltage source Vdd side to which the other end is connected. As shown in Fig. 26A, the 汲 terminal of the TFT sensor T0 and the 汲 terminal of the TFT sensor T1 are connected to one end of the current source CS. The other end of the current source CS is connected to a voltage source that supplies a potential Vdd (Vs > Vdd). The gate terminal of the TFT sensor T0 is commonly connected to the gate terminal of the TFT sensor T1 and is connected to a voltage source supplying the voltage Vg. The source terminal of the TFT sensor T0 is connected to the non-inverting input terminal of the operational amplifier AMP1, and is connected to a voltage source that supplies the potential Vs. The source terminal of the TFT sensor T1 is connected to the inverting input terminal of the operational amplifier AMP1. A resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1, and the operational amplifier AMP1 and the resistor Rf constitute a current-voltage conversion circuit-57-201142676. Because the TFT sensor TO, T1 is a p-channel TFT Since the operation of the sensor driver 20 is the same as the operation described with reference to FIGS. 22, 23A, and B, the description thereof is omitted. Here, the current source C S can also be a current discharge current source. In this case, it becomes the circuit configuration shown in Fig. 26B. In this case, the circuit configuration shown in FIG. 26A is changed to be connected to the voltage source of the supply voltage Vss as shown in FIG. 26B, and the source terminal of the TFT sensor T0 is connected. It is connected to a voltage source that supplies a voltage Vd (Vss > Vd). Other advantages and modifications will be apparent to those skilled in the art, and the scope of the present invention is not limited to the specific details and representative embodiments shown and described herein. Therefore, various modifications may be made without departing from the spirit and scope of the general inventive concept defined by the appended claims and the equivalents thereof. FIG. 1 is a view showing the first embodiment of the present invention. A diagram showing an example of a cross-sectional structure of a display panel of a light sensing device. Fig. 2 is a view showing the configuration of the TFT sensor T0 provided on the display panel. Fig. 3A is a view showing the configuration of the TFT sensor T1 provided on the display panel, showing a state in which a finger or the like does not contact the display panel 10. Fig. 3B is a view showing the configuration of the TFT sensor T1 provided on the display panel, showing a state in which a finger or the like contacts the display panel 1 . Fig. 4 is a front elevational view showing a display panel provided with a light sensing device according to the first embodiment of the present invention.

S-58-201142676 Fig. 5 is a view showing a schematic division of a region of the display region in the first embodiment. Fig. 6 is a view showing a detailed circuit configuration of a portion of one divided region 11 of the portion A of Fig. 5. Fig. 7 is a circuit diagram showing an example of the circuit configuration of the sensor driver. Figure 8 is a graph showing the light-current characteristics of a - SiTFT. Fig. 9 is a view showing a modification of the light shielding wall. Fig. 10 is a circuit diagram showing a modification of the sensor driver of the first embodiment. Fig. 11 is a view showing a cross-sectional structure of a display panel in which the display panel including the photo-sensing device according to the first embodiment of the present invention is configured to constitute an organic electroluminescence display device. Fig. 12 is a view showing a detailed circuit configuration of a part of one divided region of the display panel shown in Fig. U. Fig. 13 is a front elevational view showing an example of a display panel provided with a light sensing device according to the second embodiment. Fig. 14 is a view showing the arrangement of the gate line, the sensor gate line, and the capacitance line of the second embodiment. Fig. 15 is a front elevational view showing a state in which a light shielding film is formed on the color filter substrate of the display panel of the second embodiment. Fig. 16 is a view showing a detailed circuit configuration of a portion of one of the divided regions 11 corresponding to the portion A of Fig. 5 of the display panel shown in Fig. 13. -59- 201142676 Fig. 17 is a front view showing an example of a display panel provided with a light sensing device according to the third embodiment. Fig. 18 is a view showing the arrangement of the gate line, the sensor gate line, and the capacitance line of the third embodiment. Fig. 19 is a front elevational view showing an example of a display panel provided with a light sensing device according to a fourth embodiment. Fig. 20 is a view showing a schematic division of a region of a display region in the fifth embodiment. Fig. 21 is a view showing the configuration of a detailed circuit of the portion A' in Fig. 20. Fig. 2 is a circuit diagram showing the circuit configuration of the sensor driver of the fifth embodiment. Fig. 2A is an equivalent circuit diagram of a drive circuit formed by a pair of sensor pairs by the sensor driver of the fifth embodiment. Fig. 2B is an equivalent circuit diagram of a drive circuit formed by a pair of sensor pairs in the case where the current source is a current discharge type, using the sensor driver of the fifth embodiment. Fig. 24 is a view showing a detailed circuit configuration of a part of one divided region 11 corresponding to the portion of Fig. 20 in the case where the TFT sensor is a p-channel TFT in the fifth embodiment. Fig. 25 is a circuit diagram showing a configuration example of a sensor driver corresponding to the case where the TFT sensor is a p-channel TFT in the fifth embodiment. Fig. 26A is an equivalent circuit diagram of the driving circuit formed by the pair of sensors in the case where the T F T sensor is the P channel T F T and the sensor driver of the fifth embodiment.

S-60-201142676 Figure 26B shows the case where the TFT sensor is a p-channel TFT, and the current source CS is a current discharge type, and the pair of sensor pairs are driven by the sensor driver of the fifth embodiment. Equivalent circuit diagram of the circuit. [Description of main component symbols] 10 Display panel 10 1 TFT substrate 102 Color filter substrate 103 Liquid crystal 104 Backlight 105 Insulation film 111 Gate line 112 Bottom line 114 Pixel electrode 12 1 Sensor gate line 122 Sensor 汲Polar line 123 sensor source line 124 photoelectric conversion portion 125 light shielding wall 126 light shielding wall 128 reflection film 13 1 polarizing plate 13 2 polarizing plate 14 1 color filter 201142676 142 light shielding film 143 common electrode 127 channel protective film TO TFT sense Detector IdsO 汲polar current T 1 TFT sensor 15 1 Capacitor line 11 Division area G 1 ~ G5 Gate terminal 20 Sensor driver D 1 — 0 to D7 - 0 汲 Terminal GL5 Shared gate line DL70 Common 汲Polar line DL7 1 Shared drain line SL70 Common source line G 1 to G 5 Gate terminal 20 1 Scan driver 202 Detection driver V out Digital signal output 2 0 11 Shift register GLn Gate line DL m Common 汲Polar line SL m shared source line s -62- 201142676 D m — 0 汲AMP 1 Vd for Rf electric CS electric Vss for Is electric Vss electric BUF slow (SH) 203 take 204 flat (ADC) 205 class Vgs 汲 IdsO 汲Is dark 3 0 1 glass 3 02 dense 3 11 yang 3 13 with 3 12 yin 3 13 There are 3 15 绝 3 14 汲 extreme sub-amplifier to the potential choke source to the potential flow source rushing circuit sample to keep the circuit line serial conversion circuit than - digital conversion circuit pole current current current glass substrate sealing glass substrate EL EL Layer Electrode EL Light Emitting Layer Electrode -6 3- 201142676 T4 Transistor T3 Transistor 3 18 Select Line 3 16 Shading Wall 3 17 Light-shielding ink 3 3 1 Reflective film C Capacitor R Red G Green B Blue s -64-

Claims (1)

201142676 VII. Patent application scope: 1. A light sensing device, comprising: a first substrate: a plurality of light sensing portions arranged in two dimensions on a surface of the first substrate; a scan driver, The light sensing unit disposed in each column is set to a selected state; and the detecting driver takes in a detection signal corresponding to the illuminance of the incident light of each of the light sensing portions set to the selected state. Each of the photo-sensing sections includes a first photosensor having a first photoelectric conversion unit that is shielded from light, and a second photosensor that changes in accordance with an external force applied from the outside. a second photoelectric conversion unit; the detection driver is configured to maintain a voltage of each of the first photosensors and the electrodes of the second photosensors in the selected state at an equal voltage' The illuminance is taken in parallel as a plurality of voltage signals corresponding to currents flowing through the respective second photosensors set to the selected state. 2. The light sensing device according to claim 1, further comprising: a second substrate having a surface 'opposite to the surface of the first substrate and disposed to face the surface of the first substrate a plurality of light-shielding walls are provided on the surface of the first substrate and the surface of the second substrate at a position of -65 to 201142676 surrounding the second photoelectric conversion portion, and have a light-shielding effect on visible light. And a gap formed between the upper end surface of the light shielding wall and the surface of the first substrate and the other surface of the second substrate; the gap constitutes a light valve, and the light valve system When the external force is applied to the first substrate or the second substrate, the light is narrowed, and the light is blocked from entering the photoelectric conversion portion of each of the second photosensors. 3. The light sensing device according to claim 1, wherein each of the first photosensors and the second photosensors are formed by a thin film transistor; the first photoelectric conversion unit and the first The photoelectric conversion unit includes a semiconductor layer. 4. The light sensing device of claim 3, wherein: the plurality of sensor gate lines are disposed in the column direction and configured to be in the column direction The gate electrode and the gate electrode of the second photo sensor are connected in common; the first signal line of the plurality of first sensors is disposed in the row direction and is the first one arranged in the row direction The first electrode of the photosensor is connected to one of the source electrodes; the second signal line of the first sensor is disposed in the row direction and the first photosensor is disposed in the row direction The drain electrode is connected to the other side of the source electrode: S -66- 201142676 The first signal line of the second sensor is arranged in the row direction, and the second signal is arranged in the row direction. The drain electrode of the photo sensor is connected to one of the source electrodes; and the second signal line of the plurality of second sensors is arranged in the row direction, and the second light sensation is arranged in the row direction The drain electrode of the detector is connected to the other side of the source electrode; the scan driver is connected to the sensor gate output sensor of the sensor No. 'the sensor scan signal having a first signal level of the optical sensor to be turned on with the second light sensor. 5. The light sensing device of claim 4, wherein the plurality of light sensing portions are divided into a plurality of light sensor groups arranged in two dimensions; the light sensor groups are included in a predetermined number a predetermined number of the light sensing portions arranged in a row with a predetermined number; a predetermined number of the sensor gate lines connected to the respective photosensor groups arranged in the column direction and the common gate line Connected to and connected to the scan driver; a predetermined number of the first sensor first signal lines connected to the respective photosensor groups arranged in the column direction and the first signal line shared by the first sensor Connected to and connected to the detection driver; a predetermined number of the second sensor first signal lines connected to the respective photosensor groups arranged in the column direction and a second sensor first signal line "Commonly connected" and connected to the detection driver; -67- 201142676 a predetermined number of the first sensor second signal line connected to the respective photosensor groups arranged in the column direction and sharing the first sensing The second signal line is connected in common and connected to the detection driver: Each of the predetermined number of light sensors arranged in groups connected to a second sensor of the second signal line and the common second sensor based second signal line connected in common, and connected to the detection drive. 6. The light sensing device of claim 4, wherein the plurality of light sensing portions are divided into a plurality of light sensor groups arranged in two dimensions; the light sensor groups are included in a predetermined number a predetermined number of the light sensing portions arranged in a row with a predetermined number; a predetermined number of the sensor gate lines connected to the respective photosensor groups arranged in the column direction and the common gate line Connected to and connected to the scan driver; a predetermined number of the first sensor first signal lines connected to the respective photosensor groups arranged in the column direction and the first signal line shared by the first sensor Connected to and connected to the detection driver; a predetermined number of the second sensor first signal lines connected to the respective photosensor groups arranged in the column direction and a second sensor first signal line Connected to the detection driver; a predetermined number of the first sensor second signal line connected to the respective photosensor groups arranged in the column direction, and a predetermined number of the second sensor The second signal line is connected in common to the shared second signal line, and is connected to the detection driverThe optical sensing device of claim 4, wherein: the plurality of display pixels are arranged in a matrix on the surface of the first substrate, each having an optical component; The line is connected to the plurality of display pixels arranged in the column direction and arranged to extend in the column direction; and the plurality of signal lines are connected to the plurality of display pixels arranged in the row direction, and are arranged Extending in the row direction; the display pixel includes a predetermined number of sub-pixels having different colors arranged in the column direction; and the first photo sensor and the second photo sensor are respectively disposed in the column direction The area between the display pixels is disposed. 8. The optical sensing device of claim 4, wherein the detecting driver comprises: a plurality of current sources 'connected to the first signal lines of the first sensors' and in the first sense The first signal line of the detector supplies a current; the plurality of buffer circuits are disposed between the first signal line of each of the second sensors adjacent to each other and the first signal line of each of the first sensors; The second sensor first signal line connection 'output terminal is connected to the first sensor first signal line; the voltage source is connected to the first sensor second signal line' and The second signal line of each of the first sensors supplies a voltage; -69- 201142676 The plurality of current-voltage conversion circuits are connected to the second signal lines of the first sensors adjacent to each other and the second sensors The second signal line is connected to convert a current flowing through the second signal line of each of the second sensors into a plurality of voltage signals; and the parallel series conversion circuit is configured to perform the plurality of current-voltage conversion circuits The voltage signal is supplied as a parallel signal and the parallel signal is converted into a serial signal. 9. The optical sensing device of claim 4, wherein the detecting driver comprises: a plurality of current sources, and the first signal lines of the first sensors adjacent to each other and the second a first signal line of the sensor is connected in common to supply a current; a voltage source is connected to the second signal line of each of the first sensors, and a voltage is applied to the second signal line of each of the first sensors; The current-voltage conversion circuit is connected to the second signal line of each of the first sensors adjacent to each other and the second signal line of each of the second sensors, and the second signal line of each of the second sensors The flowing current is converted into a plurality of voltage signals; and the parallel serial conversion circuit supplies the plurality of voltage signals as parallel signals from the current-voltage conversion circuit, and converts the parallel signals into serial signals. S-70-201142676 ίο. A display device comprising: a substrate; a plurality of display pixels arranged on the surface of the substrate in two dimensions, each having an optical element; and a plurality of light sensing portions The scanning driver is configured to set the respective photo sensing portions arranged in the respective columns to a selected state; and the detecting driver is configured to take in the respective selected states. The light sensing unit is configured to detect the illuminance of the incident light. The light sensing unit includes a first photosensor including a first photoelectric conversion unit that blocks light, and a second photo sensor. The second photoelectric conversion unit that changes the illuminance according to an external force applied from the outside; the detection driver sets each of the first photo sensor and the second photo sensor that are set to the selected state. The voltage of the electrode is maintained at an equal voltage, and in response to the illuminance, a plurality of voltage signals corresponding to currents flowing through the respective second photosensors set to the selected state are taken in parallel as the detection signal. The display device of claim 10, wherein the first photosensor and the second photosensor are formed by a thin film transistor; the first photoelectric conversion unit and the second photoelectric conversion The ministry includes a semiconductor layer. 201142676 1 2 . The display device of claim 1 , comprising: a plurality of sensor gate lines arranged in a column direction and configured with the first light sensing in a column direction The gate of the device and the gate electrode of the second photosensor are connected in common; the first signal line of the plurality of first sensors is arranged in the row direction, and the first light is arranged in the row direction The drain electrode of the sensor is connected to one of the source electrodes; the second signal line of the first sensor is disposed in the row direction and is disposed in the row direction of the first photosensor The first electrode of the second sensor is connected to the other of the source electrodes; the first signal line of the second sensor is disposed in the row direction and the drain of the second photosensor disposed in the row direction The electrode is connected to one of the source electrodes; and the second signal line 'the second signal line' is disposed in the row direction and is connected to the drain electrode of the second photosensor disposed in the row direction The other side of the source electrode is connected: the scan driver is connected to the sensor gate line output sensor scan signal, and the sensor sweep The scanning signal has a signal level that is used to turn the first photo sensor and the second photo sensor into an on state. The display device of the first aspect of the invention is in the plurality of light sensing. The portion is divided into a plurality of photosensor groups arranged in two dimensions; S-72- 201142676 Each of the photo sensor groups includes a predetermined number of the photo sensing portions arranged in a predetermined number of columns and a predetermined number of rows a predetermined number of the sensor gate lines connected to the respective photosensor groups arranged in the column direction are connected in common to the common gate line and connected to the scan driver; and the respective columns arranged in the column direction The first sensor first signal line connected to the predetermined number of photosensor groups is connected in common to the first signal line of the common first sensor, and is connected to the detection driver; and the row is arranged in the column direction. a predetermined number of the first sensor first signal lines connected to the respective photosensor groups are connected in common to the first signal line of the shared second sensor, and are connected to the detection driver; and are arranged in the column direction. a predetermined number of the first sensor second signal lines connected to the respective photosensor groups Cooperating with the second signal line of the shared first sensor and connected to the detection driver; and the second signal line of the second sensor connected to the respective photosensor groups arranged in the column direction It is connected in common to the second signal line of the shared second sensor, and is connected to the detection driver. 14. The display device of claim 11, wherein the plurality of light sensing portions are divided into a plurality of photosensor groups arranged in two dimensions; the photosensor groups are included in a predetermined number of columns and a predetermined number of the light sensing portions of a predetermined number of rows; -73- 201142676 a predetermined number of the sensor gate lines and common gates connected to the respective photosensor groups arranged in the column direction The wires are connected in common and connected to the scan driver; the first signal line of the first sensor connected to the respective photosensor groups arranged in the column direction and the first signal of the first sensor are shared The wires are connected in common and connected to the detection driver; the second sensor is connected to the photosensor group arranged in the column direction, and the second sensor is connected to the second sensor. The signal lines are connected in common and connected to the detection driver; the second signal line of the first sensor connected to the respective photosensor groups arranged in the column direction, and the second number of the predetermined number The second signal line of the sensor is connected to the common second signal line, and the check is performed Test drive connections. I5. The display device of claim 10, wherein the display pixel is provided with a liquid crystal display element as the optical element. The display device of claim 1, wherein each of the display pixels includes a light-emitting element, and the light-emitting element includes an organic electroluminescence element as the optical element. 17. A display device comprising: a substrate; a plurality of display pixels 'two-dimensionally arranged on a surface of the substrate 'each having an optical element; and a plurality of light sensing portions' being arranged in two dimensions The light sensing unit includes: a first photosensor including a first photoelectric conversion unit that is shielded from light; and a second photosensor having the surface; The illuminance corresponds to a second photoelectric conversion unit that changes external force, and each of the display pixels includes a predetermined number of sub-pixels that are different in color in the column direction; the first photosensor and the first photosensor The photosensors are each disposed in a region between the display pixels arranged in the column direction. The display device of claim 17, wherein the first photosensor and the second photosensor are formed by a thin film transistor; the first photoelectric conversion unit and the second photoelectric conversion The ministry includes a semiconductor layer. The display device of claim 18, wherein: the plurality of scanning lines are connected to the plurality of display pixels arranged in the column direction, and are arranged to extend in the column direction; the plurality of signals The line is connected to the plurality of display pixels arranged in the row direction and arranged to extend in the row direction; the plurality of sensor gate lines are arranged in the column direction and arranged in the column direction The gate electrode of the first photosensor and the gate electrode of the second photosensor are connected in common; the first signal lines of the plurality of first sensors are arranged in the row direction, and in the row direction The first electrode of the first photosensor is connected to one of the source electrodes; -75- 201142676, the second signal line of the first sensor is disposed in the row direction and in the row direction The first electrode of the first photosensor is connected to the other of the source electrodes; the plurality of second sensor first signal lines 'are arranged in the row direction' and are arranged in the row direction The drain electrode of the second photosensor is connected to one of the source electrodes; and the plurality of second sensing The second signal line ' is disposed in the row direction' and is connected to the other of the drain electrode and the source electrode of the second photosensor disposed in the row direction. 20. The display device of claim 19, further comprising a plurality of first display pixel groups arranged in two dimensions: each of the first display pixel groups having an even number of the displays arranged adjacent to each other in the row direction a pixel; the first photo sensor and each of the second photosensors are alternately arranged in a column direction in a region between the first display pixel groups adjacent in a column direction; the sensor The gate line is disposed in a region between the display pixels of one half of each of the first display pixel groups; and each of the scan lines is disposed in a region between the first display pixel groups in the row direction. 21. The display device of claim 2, wherein the length of the first and second photosensors in the row direction is equal to or shorter than the length of the first display pixel group. A display device according to claim 19, further comprising a plurality of second display pixel groups arranged in two dimensions; wherein each of the second display pixel groups is arranged in a column direction An even number of the display pixels adjacent to each other; the first photo sensor and the second photo sensor are disposed in a region between the display pixels of one half of the second display pixel group; the first sensor 1 signal line, the first sensor second signal line, the second sensor first signal line, and the second sensor second signal line are provided in one of the display pixels of the second display pixel group An area between pixels; the signal line is disposed in a region excluding a region between the display pixels of one half of the second display pixel group. The display device of claim 22, wherein the length of the first and second photosensors in the row direction is equal to or shorter than the length of the display pixel. 2. The display device of claim 19, further comprising a plurality of third display pixel groups arranged in two dimensions; each of the third display pixel groups being disposed adjacent to each other in the row direction and the column direction An even number of the display pixels; the first photosensor and the second photosensor are disposed in a region between the display pixels at half of the direction of the third display pixel group; the sensor gate a line system is disposed in a region between the display pixels which is half of the row direction of the third display pixel group; -77- 201142676 the first sensor first signal line, the first sensor second signal line, the The second sensor first signal line and the second sensor second signal line are disposed in a region between the display pixels which is half of the third display pixel group in the column direction; the scan line is set in the row direction The area between the third display pixel groups; the signal line is provided in a region excluding a region between the display pixels which is half of the direction of the third display pixel group. The display device of claim 24, wherein the length of the first and second photosensors in the row direction is equal to or shorter than the length of the third display pixel group. 2 6. A driving method of a light sensing device, wherein the light sensing device has a plurality of light sensing portions arranged in two dimensions, and each of the light sensing portions includes: a first photo sensor; The first photoelectric conversion unit that is shielded from light, and the second photosensor includes a second photoelectric conversion unit that changes the illuminance of the incident light in response to external force applied from the outside. The driving method includes: The first photo sensor and the second photo sensor are disposed in the selected state; and each of the first photosensor and the second photosensor to be set in the selected state A state in which the voltage of the electrode is maintained at a voltage equal to the illuminance, a plurality of voltage signals corresponding to the current flowing through the second photosensor are taken in parallel. S-78-201142676 2 7. A method for driving a light sensing device according to claim 26, wherein the plurality of voltage signals are further taken as a parallel signal, and the parallel signal is converted into a serial signal. And output. The method of driving a light sensing device according to claim 26, wherein the first photo sensor and the second photo sensor are formed by a thin film transistor; the fetching system has: Supplying current to one of the drain electrode and the source electrode of the first photosensor; flowing between the drain electrode and the source electrode of each of the first photosensors set to the selected state The floating voltage of the one of the drain electrode and the source electrode of each of the first photosensors generated by the current is passed through the buffer circuit to the drain electrode and the source of the respective second photosensors One of the electrodes is output; and a voltage is applied to the other of the drain and the source of each of the first photosensors. The first photosensor of the first photosensor set to the selected state is set by an operational amplifier. The other of the pole electrode and the source electrode and the other of the drain electrode and the source electrode of each of the second photosensors are virtually short-circuited and set to the same potential; and the second light is to be The current flowing between the drain electrode and the source electrode of the sensor is converted into the electricity Signal. The method of driving a light sensing device according to claim 26, wherein the first photo sensor and the second photo sensor are thin film transistors; One of the drain electrode and the source electrode of each of the first photosensors, and one of the drain electrode and the source electrode of the second photosensor are connected to a connection point, and the connection point is connected to the connection point Supplying a current; applying a voltage to the other of the first electrode and the source electrode of each of the first photosensors; and using the operational amplifier to set the first photosensors set to the selected state The other of the pole electrode and the source electrode and the other of the drain electrode and the source electrode of each of the second photosensors are virtually short-circuited and set to the same potential; and the second light is to be The current flowing between the drain electrode and the source electrode of the sensor is converted into the voltage signal. S -80-