201140971 六、發明說明： 【發明所屬之技術領域】 本發明有關於可使用於DVD驅動、CD驅動或者雷射Tv 等的半導體雷射裝置及其製造方法。 【先前技術】 製造成本低的半導體雷射裝置，可使用壓模樹脂成型 製造的壓模封裴體（例如，參照特許文獻丨）。習知的壓模封 裝體是藉由壓模樹脂將引線固定於框架，再以Ag糊狀物或 衰氧知Μ日將次黏著基板（subm〇unt)接合於框架上，再藉由 AuSn或SnAg銲料將半導體雷射晶片接合於次黏著基板上。 針對習知的壓模封裝體的製造方法加以說明。首先， 在藉由銲料將半導體雷射晶片接合於次黏著基板上。其 二’使接合著此半導體雷射的次黏合基板藉由Ag糊狀物黏 著於框架上’再藉由烘烤使Ag糊狀物的溶劑蒸發而固化。 其-人為了去除由此蒸發的溶劑導致的封裝體表面污染，進 仃電毁處理。之後’進行導線接合，由排列著複數個裝 置的框架將半導體雷射裝置個別化，再送入檢查步驟。 特許文獻1:特開20 03-31885號公報 特許文獻2:特開2007-1 9470號公報 【發明内容】 發明欲解決的問題 I知的製k步驟複雜，所以必須使用相當多的製造裝 201140971 置，各製造裝置之間的承載卡库广 · 戰卞&(carrier cassette)移動 的人力也是必要的。雖麸士库软t 雖…、卞匣移動可以自動化，然而設備 費用會變得大增。再者，相較於裡 汗权於鋅枓，Ag糊狀物、環氧樹 脂的熱傳導^ ’所以也有元件的高溫特性變差的問題。 並且，⑽封裝體的製造方法已知有將鲜料設於次黏 者基板的上面及下面，在框架上依序安裝次黏著基板與半 導體雷射晶片，再將封裝體整個加熱，使銲料溶融而同時 相互接合的方法。（例如參照特許文獻2 ) 玻璃密封的CAN封裝體的耐熱溫度為4〇〇t以上，所 以可使用如上所述的製造方沐 裂垃方去然而，壓模封裝體具有樹 脂部分’所以耐熱溫度非常低 -㈣低®此，無法使用加熱整 封裝體的製造方法。 有鑑於上述欲解決的問題， ^ 丰發明的目的在於得到一 種能夠便宜、簡單地贺诰，而古、ro 溫特性良好的半導體雷射 裝置及其製造方法。 解決問題的手段 本發明為一種半導體雷射裝 衣直包括：框架；引線，Μ 由壓模樹脂固定於上述框架，·次 曰 ^ ^ ，Γ ^ 1者基板，藉由第1銲料 接。於上述框架上；以及半導 人w 由町日日月’藉由第2銲料 接a於上述次黏著基板，其 m L 徵在於.上述壓模樹脂的耐 ^皿度比上述第】以及第2銲料㈣點還高。 發明效果 根據本發明，可得到能夠 ± 簡早地製造，而高溫 特挫良好的半導體雷射裝置 4 201140971 【實施方式】 參照圖式以說明本發明的實施形態之半導體雷射裝置 及其製造方法。相同的構成元件給予相同的符號，且有時 會省略重複說明。 實施形態1 第1圖為實施形態1的半導體雷射裝置的上視圖，第 2圖為其剖面圖。 藉由壓模樹脂2 ’引線3被固定於框架1上。藉由銲 料4(第1銲料），次黏著基板5被接合於框架1上。藉由 鲜料6(第2銲料）’半導體雷射晶片7被接合於次黏著基 板5上。藉由導線8’連接半導體雷射晶片7的上面與框 架1藉由導線9連接引線3與次黏著基板5上的配線。 此次黏著基板5的配線連接於半導體雷射晶片7的下面。 壓模樹脂2為熱固性樹脂。熱固性樹脂的耐熱溫度， 選擇種類為高於4001。在維持在此溫度的狀態，在壓模 樹知2施加重量幾乎不變形。 銲料4’6為在半導體雷射裝置之中，一般使用的AuSn 系銲料。Au的組成比為的AuSn銲料的熔點為28(TC。 因此，壓模樹脂2的耐熱溫度較銲料4, 6還高。 接著’針對實施形態1的半導體雷射裝置的製造方法 加以。兒明。第3、5、6、8、9為用以說明實施形態1的半 導體雷射裝置的製造方法的上視圖，第4、7圖為其剖面圖。 首先’在框架1進行壓縮步驟。如第3以及4圖所示， 形成切斷圖案，並設置下移（d〇wnset)。 201140971 其次，如第5圖所示，藉由壓模樹脂2將引線3固定 於框架1。壓模樹脂2為熱固性樹脂。熱固性樹脂成型時 的黏度低’所以大多在框架1生成薄的突出部，且為了去 除此薄的突出部，在成型後進行喷除（blast)處理。此時即 使鍍層也會含有損傷，且組裝時的導線接合無法達成連 接因此，為了實現安定的導線接合性，在壓模樹脂2的 成型後進行框架1以及引線3的鍍層。之後，將壓模封裝 體個別化。 其次，使封裝體移動至次黏著基板搭載基台。接著， 如第6圖以及帛7圖所示，將上面及下面分別設有銲料4 與銲料6的次黏著基板5對準㈣i的位置並置於框架} JL ° A、 其次，使封裝體移動至晶粒接合基台。接著，第8圖 所示，將半導體雷射晶η對準次黏著基板5的位置並置 於次黏著基板5上。 之後，將晶粒接合基台的溫度提升，以加熱已堆疊的 框架1、次黏著基板5以及半導體雷射晶片7，使銲料6 熔融。藉此’#由銲料4,將次黏著基板5接合於框架】 二’且藉由銲料6將半導體雷射晶片7接合於次黏著基板 5上。 其次，使封裝體移動至導線接合基台。接著，如第9 圖所不，藉由導線8連接半導體雷射晶片7與引線3。 一上的步驟所製造的半導體雷射裝置，收納於收納盤。 邊與比較例比較，一邊說明本實施形態的半導體雷射 6 201140971 裝置的效果。第— 弟10圖為顯示比較例的半導體雷射裝置的剖BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device which can be used for a DVD drive, a CD drive, or a laser Tv, and a method of manufacturing the same. [Prior Art] A semiconductor laser device having a low manufacturing cost can be molded using a stamper resin (for example, refer to the franchise document). The conventional die-molding package is characterized in that the lead wire is fixed to the frame by a molding resin, and then the sub-adhesive substrate is bonded to the frame by an Ag paste or an oxygen oxidization, and then by AuSn or The SnAg solder bonds the semiconductor laser wafer to the sub-adhesive substrate. A method of manufacturing a conventional stamper package will be described. First, a semiconductor laser wafer is bonded to a secondary adhesive substrate by solder. The second sub-adhesive substrate to which the semiconductor laser is bonded is adhered to the frame by an Ag paste, and then solidified by evaporation of the solvent of the Ag paste by baking. It is used to remove the surface contamination of the package caused by the solvent evaporated thereby, and the electricity is destroyed. Thereafter, the wire bonding is performed, and the semiconductor laser device is individualized by a frame in which a plurality of devices are arranged, and then fed to the inspection step. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. It is also necessary to carry the manpower of the carrier card between the manufacturing devices and the carrier cassette. Although the bran library is soft, although the mobile can be automated, the cost of the equipment will increase. Further, compared with the heat transfer of the Ag paste and the epoxy resin to the zinc lanthanum, there is a problem that the high-temperature characteristics of the element are deteriorated. Moreover, (10) a method of manufacturing a package is known in which a fresh material is placed on the upper surface and the lower surface of a sub-adhesive substrate, and a sub-adhesive substrate and a semiconductor laser wafer are sequentially mounted on the frame, and then the entire package is heated to melt the solder. And at the same time the method of joining each other. (For example, refer to Patent Document 2) The heat-resistant temperature of the glass-sealed CAN package is 4 〇〇 or more, so the above-mentioned manufacturing method can be used. However, the stamper package has a resin portion, so the heat-resistant temperature Very low - (four) low ® This, the manufacturing method of heating the whole package cannot be used. In view of the above-mentioned problems to be solved, the purpose of the invention is to obtain a semiconductor laser device which can be inexpensively and simply greeted, and which has excellent temperature characteristics of ancient and ro, and a method of manufacturing the same. Means for Solving the Problems The present invention is directed to a semiconductor laser package comprising: a frame; a lead wire, a substrate fixed to the frame by a stamper resin, and a substrate of the second 曰 ^ ^ , Γ ^ 1 by a first solder. In the above-mentioned frame; and the semi-conductor w is connected to the sub-adhesive substrate by the second solder by the second solder, the m L is characterized by the resistance of the stamper resin to the above-mentioned 2 solder (four) points are still high. Advantageous Effects of Invention According to the present invention, a semiconductor laser device capable of being manufactured at a low temperature and having a high temperature fluctuation is obtained. 201140971 [Embodiment] A semiconductor laser device according to an embodiment of the present invention and a method of manufacturing the same are described with reference to the drawings. . The same constituent elements are given the same symbols, and overlapping descriptions are sometimes omitted. (First Embodiment) Fig. 1 is a top view of a semiconductor laser device according to a first embodiment, and Fig. 2 is a cross-sectional view thereof. The lead 2 is fixed to the frame 1 by a stamper resin 2'. The secondary adhesive substrate 5 is bonded to the frame 1 by the solder 4 (first solder). The semiconductor laser wafer 7 is bonded to the sub-adhesive substrate 5 by a fresh material 6 (second solder). The wires on the sub-adhesive substrate 5 are connected by the wires 9 to the upper surface of the semiconductor laser wafer 7 by the wires 8' and the frame 1 by the wires 9. The wiring of the adhesive substrate 5 is connected to the lower surface of the semiconductor laser wafer 7. The molding resin 2 is a thermosetting resin. The heat-resistant temperature of the thermosetting resin is selected to be higher than 4001. At the state maintained at this temperature, the weight applied to the stamper is hardly deformed. The solder 4'6 is an AuSn-based solder which is generally used among semiconductor laser devices. The AuSn solder having a composition ratio of Au has a melting point of 28 (TC. Therefore, the heat resistance temperature of the stamper resin 2 is higher than that of the solders 4 and 6. Next, the method for manufacturing the semiconductor laser device according to the first embodiment will be described. 3, 5, 6, 8, and 9 are top views for explaining the method of manufacturing the semiconductor laser device according to the first embodiment, and Figs. 4 and 7 are cross-sectional views. First, the compression step is performed on the frame 1. As shown in Figures 3 and 4, a cut pattern is formed and a downward shift (d〇wnset) is set. 201140971 Next, as shown in Fig. 5, the lead 3 is fixed to the frame 1 by the molding resin 2. 2 is a thermosetting resin. The viscosity of the thermosetting resin during molding is low. Therefore, a thin protruding portion is often formed in the frame 1, and in order to remove the thin protruding portion, a blast process is performed after molding. In the case where damage is caused and the wire bonding at the time of assembly cannot be achieved, in order to achieve stable wire bonding property, the frame 1 and the lead 3 are plated after the molding of the mold resin 2. Thereafter, the stamper package is individualized. Encapsulation The substrate is mounted on the substrate to the sub-adhesive substrate. Next, as shown in Fig. 6 and Fig. 7, the solder 4 and the sub-adhesive substrate 5 of the solder 6 are placed on the upper and lower surfaces, respectively, and placed at the position of the frame (J). A. Next, the package is moved to the die bond substrate. Next, as shown in Fig. 8, the semiconductor laser crystal n is aligned with the sub-adhesive substrate 5 and placed on the sub-adhesive substrate 5. Thereafter, the die is The temperature of the bonding substrate is increased to heat the stacked frame 1, the sub-adhesive substrate 5, and the semiconductor laser wafer 7, so that the solder 6 is melted. Thereby, the sub-adhesive substrate 5 is bonded to the frame by the solder 4] And the semiconductor laser wafer 7 is bonded to the secondary adhesive substrate 5 by the solder 6. Next, the package is moved to the wire bonding base. Next, as shown in Fig. 9, the semiconductor laser wafer 7 is connected by the wire 8. The semiconductor laser device manufactured in the above step is housed in the storage tray. The effect of the semiconductor laser 6 201140971 device of the present embodiment will be described in comparison with the comparative example. Semiconductor thunder Section of the launching device
面圖。比較例中，益^ A Ύ 藉由Ag糊狀物10接合框架1與次黏著 基板5。並且也有以環氧樹脂取代Ag糊狀物1 0的情況。 以下的表1顯示接合材的熱傳導率的總覽。 表1__ 熱傳導率（w/m.k) 57. 0 33. 0 _ 2. 0 0. 2 _接合材—_ _AuSn銲料 _SnAg銲料Surface map. In the comparative example, the frame 1 and the sub-adhesive substrate 5 were bonded by the Ag paste 10. There is also a case where the Ag paste 10 is replaced with an epoxy resin. Table 1 below shows an overview of the thermal conductivity of the bonding material. Table 1__ Thermal conductivity (w/m.k) 57. 0 33. 0 _ 2. 0 0. 2 _ bonding material — _AuSn solder _SnAg solder
Ag糊狀 _環氧樹脂 由於Ag糊狀物、環氧樹脂的熱傳導比銲料差，所以比 較例中的元件的高溫特性不佳。 另一方面，本實施形態的半導體雷射裝置是藉由銲料 4接合框架1與次黏著基板5。藉此，相較於比較例，可大 幅改善放熱性。根據發明人的模擬可得知，實際的封裝狀 態以及使用狀態之中，藉由將半導體雷射裝置的Ag糊狀物 改變成為SnAg銲料或AuSn銲料，可改善高溫特性由j。〇 以上至數。C左右。因此，實施形態丨的半導體雷射裝置的 高溫特性良好。 再者，本實施形態的半導體雷射裝置中，使用耐熱溫 度較銲料4，6還高的壓模樹脂2。因此，將堆疊的框架j、 次黏著基板5以及半導體雷射晶片7加熱會使銲料4 6熔 融’而框架1、次黏著基板5以及半導體雷射晶片7可同 時地相互接合。其次，由於不使用黏合用的Ag糊狀物、環 氧樹脂’所以不需要供烤爐。並且，也不需要用以去除溶 201140971 劑污染的的〇2雷雄戍_ , ^漿處理。因此，本貫施形態的半 裝置可簡單地製造。 等體雷射 再者上述第6圖〜第9圖的步驟，以現在CAN封带體 製品的生產’可利用成為主流的晶粒接合-導線接合的—V 製造裝置來貫施。亦即’藉由變更既有的CAN封裝用的製 造裝置的支禮部、搬送系統，壓模封裝體也可以如CAN封 裝體的方式同樣地組畀。甘 ,.' 裝並且，比起CAN’壓模封裝體 將晶粒接合更安定地進行。 激僂Ϊ者合⑽封裝的情況，將觀察孔外周部加熱，由於 傳導’會加熱具有元件的面。然而為了確保間隙，有必 要使加熱器外徑較勸家？丨私，孤 靦察孔稍微大，所以只有觀察孔的上面 與下面接觸加熱器，且觀察孔 规祭孔的側面幾乎不接觸。 體的尺寸變小時，此接觸 " 預戍于無法確保，而無法得到 女定的晶粒接合溫度。另一方而 士— ⑨3方面’本實施形態的半導體 射裝置的情況，框架的下部的平 J卞坦莧廣的部分加熱較佳， 所以加熱器的形狀變得簡單，可容易而安定佳地加孰。 再者，習知的壓模封裝的製 衣也衣置興本實施形態的 模封裝的製造裝置比較時，者峰吝 ^田生產數少的情況，本實施形 態1在製造裝置的投資費用較便宜。生產數愈增加，兩者 的差異會變得愈…而，本發明適用的製品是少量J 規格的製品。再者，變更劁〇取 裝的製造裝置中’必須變更所右 ' 更所有的支撐部，難以應對客戶 的需求，並且也會花費成本。另— 0办π 0 , 方面’本實施形態中， 八需簡早地變更一個組裝裝置 J又得形狀即可。因此，本 201140971 實施形態可使製造裝置的投資費用較便宜。 實施形態2 實施形態2與實施形態1不同，壓模樹脂2為熱塑性 樹脂。銲料4, 6為SnAg銲料。框架1以及引線3的表面步 成鍍層之後’可藉由壓縮步驟在框架i形成下移。其他的 構造與實施形態1相同。 熱塑性樹脂使用LCP樹脂（液晶聚合物樹脂）的情況， 軟化溫度大約為28(TC，開始變形的溫度大約為35〇。匚。因 此，組裝時有必要設置不會對壓模樹脂2造成負荷的加熱 器構造。 ^ 熱塑性樹脂比起熱固性樹脂的材料價格便宜。熱塑性 樹脂的壓模成型所需要的時間(2 〇秒)比熱固性樹脂的壓模 =型所需要的時間(2分鐘)短非常多。因此，樹脂單價便 宜，且生產量也高，所以裝置單價可較便宜。Ag paste _Epoxy resin Since the thermal conductivity of Ag paste and epoxy resin is inferior to that of solder, the high temperature characteristics of the components in the comparative example are not good. On the other hand, in the semiconductor laser device of the present embodiment, the frame 1 and the sub-adhesive substrate 5 are bonded by the solder 4. Thereby, the heat release property can be greatly improved as compared with the comparative example. According to the simulation by the inventors, it is known that the high-temperature characteristics can be improved by changing the Ag paste of the semiconductor laser device to SnAg solder or AuSn solder among the actual package state and the use state. 〇 Above to the number. C or so. Therefore, the semiconductor laser device of the embodiment is excellent in high temperature characteristics. Further, in the semiconductor laser device of the present embodiment, the stamper resin 2 having a heat-resistant temperature higher than that of the solders 4, 6 is used. Therefore, heating the stacked frame j, the sub-adhesive substrate 5, and the semiconductor laser wafer 7 causes the solder 46 to be melted' while the frame 1, the sub-adhesive substrate 5, and the semiconductor laser wafer 7 are simultaneously joined to each other. Secondly, since the Ag paste and the epoxy resin for bonding are not used, there is no need for an oven. Moreover, there is no need to remove the 〇2 雷雄戍_, ^ slurry treated with the 201140971 agent. Therefore, the half device of the present embodiment can be simply manufactured. Equal-element lasers The above-described steps of Figs. 6 to 9 are carried out by the production of a current CAN-sealed body product, which can be used as a mainstream die bonding-wire bonding-V manufacturing apparatus. In other words, the stamper package can be similarly assembled as in the CAN package by changing the blessing unit and the transport system of the conventional CAN package manufacturing apparatus. Gan,.' and installed the die bonding more stably than the CAN' die-molded package. In the case of the stimulator (10) package, the outer peripheral portion of the observation hole is heated, and the surface having the element is heated due to conduction. However, in order to ensure the clearance, it is necessary to make the outer diameter of the heater more persuasive? The smuggling, orphaning hole is slightly larger, so only the upper surface of the observation hole is in contact with the heater below, and the side of the hole is observed to be hardly contacted. When the size of the body becomes small, this contact " is not guaranteed, and the die bonding temperature cannot be obtained. In the case of the semiconductor radiation device of the present embodiment, the flat portion of the lower portion of the frame is preferably heated, so that the shape of the heater is simple, and it is easy and stable. what. Further, in the case of a conventional press-molded package, the manufacturing apparatus of the die-package of the present embodiment is compared with the case where the number of productions of the package is small, and the investment cost of the manufacturing apparatus of the first embodiment is relatively small. Cheap. The more the number of production increases, the more the difference between the two becomes. Moreover, the article to which the present invention is applied is a small amount of J-sized article. Further, it is difficult to cope with the needs of the customer and it is also costly to change the support unit of the manufacturing device that has been removed. In addition, in the present embodiment, it is necessary to change the shape of an assembly device J in a simple manner. Therefore, this embodiment of 201140971 can make the investment cost of the manufacturing device cheaper. (Embodiment 2) In the second embodiment, unlike the first embodiment, the stamper resin 2 is a thermoplastic resin. Solder 4, 6 is a SnAg solder. The frame 1 and the surface of the lead 3 are stepped after plating. The lower portion of the frame i can be formed by a compression step. The other structure is the same as that of the first embodiment. In the case where the thermoplastic resin is an LCP resin (liquid crystal polymer resin), the softening temperature is about 28 (TC, and the temperature at which deformation starts is about 35 Å. Therefore, it is necessary to provide a load for the molding resin 2 when assembling. Heater construction. ^The thermoplastic resin is cheaper than the material of the thermosetting resin. The time required for compression molding of the thermoplastic resin (2 sec) is much shorter than the time required for the mold of the thermosetting resin (2 minutes). Therefore, the unit price of the resin is low, and the production amount is also high, so the unit price of the device can be relatively cheap.
Ag的組成比為3%的SnAg銲料的熔點為22it。因此， 壓模樹脂2的軟化溫度較銲料4, 6還高，戶斤以組裝非常容 易。例如框架封裝小型化的情況，無組裝時的支樓容許度， 所以壓模樹脂2會接觸治具。相對於此，#由使用低熔點 的SnAg銲料’可將組裝溫度變低，所以可防止由治具接觸 導致的壓模樹脂2的變形。 再者比起使用含有高價Au的AuSn銲料， 銲料，可大幅削減成本。 g 將形成下移的的框架1以箍(hoop)的狀態鍍層的情 況，必須使鑛層運送用的滾筒形狀，成為避免下移的構造。 201140971 ^人’在箱捲取時必須置放層間紙而使得下移不變形。因 :二在框架1以及引線3的表面形成鍍層後，藉由壓縮步 在框架1形成下移。藉此，由於框架！為平板，所以即 =運送滾筒為任何形狀皆可，且可高精度地控制鑛層 的厚度。再者，可玄異 > 合易地進仃部分的鍍層，也可削減鍍層 材料的貴金屬的使用量。 實施形態3 圖 造 二圖為實施形態3之半導體雷射裝置的擴大剖面 著基板5與半導體雷射晶片7的接合部以外的構 與實施形態1相同。 在半導體雷射晶片7的表面具有銲料的部分形成鑛Au U。在次黏著基板5的表面形成阻障金屬12。半導體雷 ^曰片7疋以下接面（junctiGn dGwn)方式，藉由SnAg録 料6而接合於次黏著基板5。 在此，SnAg銲料6與鍍μ u直接觸接觸的情況， 將SnAg銲料加執至位赴，、田由^ Λ z上、 …、至熔點概度（Ag組成比為3%的情況，22rc ) 時，㈣辉料與錄^會立即相互擴散，且在0」秒左右 炼點溫度會上升至280°c以上而再凝固。因此，由於無法 保持足夠㈣融時間，所以與銲料潤濕不良等問題有關。 再者’雖然加熱溫度成A 28吖以上時，銲料會再熔融， 然而同樣超過熱塑性樹脂壓模樹脂的軟化溫度蒙，且 壓模封裝體最終會變形。再者，組裝時炫點溫度愈高，半 導體雷射動作溫度的銲料中的殘留應力會變得愈大，元件 的光學特性，特別是偏光特性會變差。 201140971 因此，本實施形態之 11 ^ ± & - a , , ，+導體雷射晶片7的鍍Au層 11與-人黏者基板5的銲料 增 lPt#)o _ΓΠ 之間s又置咼熔點的Pt層13(第 丄r 1； !)。藉此，可防止 與SnAg的相互擴散。因此，不 會引釔熔點上升，因此，可 991 〇Γ ,.. 確保SnAg鋅料6的熔點容易在 221 C 1秒以上的保持時 ^ t 4, a U 7 .. 藉此，可侍到遍及整個半導體 雷射曰曰片7的接合面乾淨的銲料接合。 在此，Pt層13的厚声 又不足的情況，SnAg銲料與Au會 相互擴散’熔點會瞬間變 文双Z8UC以上’無法實現安定的 接合。另一方面，Pt; 士 、 θ 愈厚時，形成時的材料的使用 量愈增加’且處理時間會變長，戶斤以與成本提高有關。並 且’由於Pt層13的硬度高’所以卜層13本身的應力原 因而使元件的可靠度降低。因此，使^層13的厚度成為 15〇ηπι以上、350nm以下。以下針對此數值範圍作詳細地說 明。 第1 2圖以及第13圖為顯示試作實施形態3之半導體 雷射裝置，並實施可靠度試驗的結果的圖式◊第12圖顯示 對於熱處理履歷的DVD部的偏光角（PA)的變化率，第13圖 顯示對於熱處理履歷的CD部的偏光角（PA)的變化率。 首先’測定剛組裝後的偏光角。其次，測定在18〇t 咼溫保存2小時後的偏光角。其次，進行_4〇°c〜+125°C的 熱循環（HC) ’測定第50次與第200次的偏光角。並且，分 別進行 Pt 層 13 為 i〇〇nm、200nm、30 0nm 情況。 測定的結果可得知，無論Pt層13的厚度如何，偏光 角在高溫保持會變差，而熱循環會改善。pt層1 3的厚度 201140971 為lOOnm的元件的高溫保存與HC的變動非常大。pt層13 的厚度為200nm與3〇〇nm的元件顯示大約相同的變化傾向。 以SEM觀察Pt層13的剖面的結果，可確認pt層】3 的厚度為lOOnm的元件’ pt層13會部分損壞。pt層13的 厚度為200nm的元件與3〇〇nm的元件無法確認pt層13的 損壞。 考慮這些結果與pt層丨3的厚度的測定精度，藉由使 Pt層13的厚度成為！5〇nm以上，可充分地防止相互擴散。 其-人Pt層13的厚度成為35〇nm以下時，可防止pt層13 的應力導致光學特性以及可靠度不良的影響。 實施形態4 第14圖為實施形態4之半導體雷射裝置的擴大剖面 圖。次黏著基板5以外的構造與實施形態2相同。 在次黏著基板5的表面形成有Ti層14(高熔點金屬）。 在Τι層14上形成有15(第2pt層）。銲料4 6為仏絲 銲料。Pt層15連接於銲料4, 6。 通常為了減低成本，有時會將貴金屬pt層變更為Η 層。銲料為AuSn銲料的情況’即使將pt層13，15變更為 Ni層’銲料的熔融時間也不會變得極端地長。然而，使用 SnAg銲料的情況，銲㈣融的同時，Ni層會擴散且炫點會 右干地下降，然而T1層也會擴散且熔點最終會瞬間上升。 此擴散的速度非常地快，無法確保能夠得到正常的輝料接 合的熔融保持時間1秒以上。因此，使用SnAg銲料的情況， 有必要使用Pt層15作為丁丄層14的阻障層。 月λ 12 201140971 【圖式簡單說明】 第1圖為顯示實施形態1之半導體雷射裝置的上視圖。 第2圖為顯示實施形態1之半導體雷射裝置的剖面圖。 第3圖為用以說明實施形態1之半導體雷射裝置的製 造方法的上視圖。 第4圖為用以說明實施形態1之半導體雷射裝置的製 造方法的剖面圖。 第5圖為用以說明實施形態1之半導體雷射裝置的製 造方法的上視圖。 第6圖為用以說明實施形態1之半導體雷射裝置的製 造方法的上視圖。 第7圖為用以說明實施形態1之半導體雷射裝置的製 造方法的剖面圖。 第8圖為用以說明實施形態1之半導體雷射裝置的製 造方法的上視圖。 第9圖為用以說明實施形態1之半導體雷射裝置的製 造方法的上視圖。 第1 0圖為顯示比較例之半導體雷射裝置的剖面圖。 第11圖為實施形態3之半導體雷射裝置的擴大剖面 圖。 第12圖為顯示試作實施形態3之半導體雷射裝置，並 實施可靠度試驗的結果的圖式。 第13圖為顯示試作實施形態3之半導體雷射裝置，並 實施可靠度試驗的結果的圖式。 13 201140971 第14圖為實施形態4之半導體雷射裝置的擴大剖面 5 ° 【主要元件符號說明】 1框架 2壓模樹脂 3引線 4銲料（第1銲料） 5次黏著基板 6銲料（第1銲料） 7半導體雷射晶片 11鍍Au層 13 Pt層（第1 Pt層） 14 Ti層（高熔點金屬層） 15 Pt層（第2Pt層） 14The SnAg solder having a composition ratio of Ag of 3% has a melting point of 22 its. Therefore, the softening temperature of the stamper resin 2 is higher than that of the solders 4, 6, and the assembly is very easy. For example, in the case where the frame package is miniaturized, there is no tolerance of the branch when assembling, so the stamper resin 2 contacts the jig. On the other hand, the use of SnAg solder having a low melting point can reduce the assembly temperature, so that the deformation of the stamper resin 2 caused by the contact of the jig can be prevented. In addition, compared with the use of AuSn solder containing high-priced Au, the solder can significantly reduce the cost. g In the case where the frame 1 that has been moved downward is plated in a hoop state, it is necessary to make the shape of the drum for transporting the ore layer a structure that avoids downward movement. 201140971 ^People's must lay the interlayer paper when the box is taken up so that the downward movement does not deform. Since the plating is formed on the surface of the frame 1 and the lead 3, the frame 1 is moved downward by the compression step. With this, thanks to the frame! It is a flat plate, so that the transport roller can be of any shape and the thickness of the ore layer can be controlled with high precision. In addition, it is also possible to reduce the amount of precious metal used in the plating material. (Embodiment 3) FIG. 2 is an enlarged cross-section of a semiconductor laser device according to Embodiment 3, and is the same as Embodiment 1 except for a joint portion between the substrate 5 and the semiconductor laser wafer 7. A portion having solder on the surface of the semiconductor laser wafer 7 forms a mineral Au U. The barrier metal 12 is formed on the surface of the sub-adhesive substrate 5. The semiconductor bump is bonded to the sub-adhesive substrate 5 by the SnAg recording 6 in a 7 疋 junction (junctiGn dGwn) manner. Here, when the SnAg solder 6 is in direct contact with the plated μ, the SnAg solder is added to the position, the field is ^ Λ z, ..., to the melting point (the Ag composition ratio is 3%, 22rc) When, (4) the Hui material and the recording will immediately spread, and the temperature will rise to 280 ° C or more and solidify at about 0 seconds. Therefore, since it is impossible to maintain sufficient (four) melting time, it is related to problems such as poor solder wetting. Further, when the heating temperature is A 28 吖 or more, the solder re-melts, but also exceeds the softening temperature of the thermoplastic resin molding resin, and the stamper package is finally deformed. Further, the higher the glare temperature during assembly, the greater the residual stress in the solder of the semiconductor laser operating temperature, and the optical characteristics of the element, particularly the polarization characteristics, are deteriorated. 201140971 Therefore, the Au plating layer 11 of the conductor laser wafer 7 of the present embodiment and the solder-increasing layer PP of the human-adhesive substrate 5 are further set to the melting point. The Pt layer 13 (the first 1r 1; !). Thereby, mutual diffusion with SnAg can be prevented. Therefore, the melting point of the ruthenium is not increased. Therefore, it is possible to ensure that the melting point of the SnAg zinc material 6 is easily maintained at 221 C for more than 1 second, and then it can be served. A clean solder joint is provided throughout the joint surface of the entire semiconductor laser cymbal 7. Here, when the thick sound of the Pt layer 13 is insufficient, the SnAg solder and the Au will diffuse each other. The melting point will change instantaneously. The double Z8UC or higher is not able to achieve stable bonding. On the other hand, the thicker the Pt; 士, θ, the more the amount of material used during formation increases, and the processing time becomes longer, which is related to the increase in cost. Further, and because the hardness of the Pt layer 13 is high, the stress of the layer 13 itself reduces the reliability of the element. Therefore, the thickness of the layer 13 is 15 〇 η π or more and 350 nm or less. This numerical range is described in detail below. Figs. 2 and 13 are diagrams showing the results of the reliability test of the semiconductor laser device of the third embodiment, and Fig. 12 shows the rate of change of the polarization angle (PA) of the DVD portion for the heat treatment history. Fig. 13 shows the rate of change of the polarization angle (PA) of the CD portion of the heat treatment history. First, the polarization angle immediately after assembly was measured. Next, the polarization angle after storage at 18 Torr for 2 hours was measured. Next, a thermal cycle (HC) of _4 〇 ° c to + 125 ° C was measured to measure the 50th and 200th polarization angles. Further, the case where the Pt layer 13 is i 〇〇 nm, 200 nm, and 30 0 nm, respectively. As a result of the measurement, it is understood that the polarization angle is deteriorated at a high temperature regardless of the thickness of the Pt layer 13, and the thermal cycle is improved. The thickness of the pt layer 13 is 201140971. The high temperature storage of the 100 nm element and the variation of the HC are very large. The elements of the pt layer 13 having a thickness of 200 nm and 3 〇〇 nm exhibit approximately the same tendency to change. As a result of observing the cross section of the Pt layer 13 by SEM, it was confirmed that the element pt layer 13 having a thickness of 100 nm of the pt layer 3 was partially damaged. The element of the pt layer 13 having a thickness of 200 nm and the element of 3 〇〇 nm cannot confirm the damage of the pt layer 13. Considering these results and the measurement accuracy of the thickness of the pt layer 3, the thickness of the Pt layer 13 is made! 5 〇 nm or more can sufficiently prevent mutual diffusion. When the thickness of the human Pt layer 13 is 35 Å or less, it is possible to prevent the stress of the pt layer 13 from being affected by optical characteristics and reliability. (Fourth Embodiment) Fig. 14 is an enlarged cross-sectional view showing a semiconductor laser device according to a fourth embodiment. The structure other than the secondary adhesive substrate 5 is the same as that of the second embodiment. A Ti layer 14 (high melting point metal) is formed on the surface of the secondary adhesive substrate 5. 15 (2nd pt layer) is formed on the Τι layer 14. Solder 46 is a solder wire. The Pt layer 15 is connected to the solders 4, 6. Usually, in order to reduce the cost, the precious metal pt layer is sometimes changed to a germanium layer. In the case where the solder is AuSn solder, the melting time of the solder is not extremely long even if the pt layer 13 and 15 are changed to the Ni layer. However, in the case of using SnAg solder, the Ni layer will diffuse while the solder layer (4) melts, and the bright point will fall to the right, but the T1 layer will also diffuse and the melting point will eventually rise. This diffusion rate is extremely fast, and it is impossible to ensure that the melting hold time of the normal glow bonding can be obtained for more than 1 second. Therefore, in the case of using SnAg solder, it is necessary to use the Pt layer 15 as a barrier layer of the butadiene layer 14. λ 12 201140971 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view showing a semiconductor laser device according to a first embodiment. Fig. 2 is a cross-sectional view showing the semiconductor laser device of the first embodiment. Fig. 3 is a top view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 4 is a cross-sectional view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 5 is a top view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 6 is a top view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Figure 7 is a cross-sectional view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 8 is a top view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 9 is a top view for explaining a method of manufacturing the semiconductor laser device of the first embodiment. Fig. 10 is a cross-sectional view showing the semiconductor laser device of the comparative example. Figure 11 is an enlarged cross-sectional view showing the semiconductor laser device of the third embodiment. Fig. 12 is a view showing the result of performing the reliability test of the semiconductor laser device of the third embodiment. Fig. 13 is a view showing the results of a reliability test of the semiconductor laser device of the third embodiment. 13 201140971 Figure 14 is an enlarged cross section of the semiconductor laser device of the fourth embodiment 5 ° [Description of main components] 1 frame 2 stamping resin 3 lead 4 solder (first solder) 5 times adhesive substrate 6 solder (first solder 7 semiconductor laser wafer 11 is plated with Au layer 13 Pt layer (first Pt layer) 14 Ti layer (high melting point metal layer) 15 Pt layer (2Pt layer) 14