201140878 HP981101 34088twf.doc/n 六、發明說明： 【發明所屬之技術領域】 明是有關於-種半導體，且特狀有· 一種發 【先前技術】 近幾年來，由於發光二極體的發光 得發光二極體在某些領域已漸漸取代斷提升，使 :如需要高速反應的掃描器燈源、液晶顯二以 4化〇物strides)為寬頻帶 _半導體材料，其發光波長含; 外光波段，因此，如氮_(GaNf3 ^個y見光及紫 為應用在發光二極體甲。 、、 知氮化合物廣 圖1、纟胃示為習知的一種發朵_脚 參照圖卜發光二極體uo二：：粗的剖面示意圖。請 半導體層114、一主動芦〗Μ括一基板112、— N型摻雜 -電極E1與-電極Ε/ — ?型摻雜半導體層118、 置於基板112上，而主叙思迷^型摻雜半導體層⑽配 ⑴與P型摻雜半導體層=6配置於_摻雜半導體層 Ρ型摻雜半導體層118二，之間。此外，電極Ε1配置於 導體層114上。 ，而電極Ε2配置於Ν型摻雜半 在發光二極體11〇巾，Μ 摻雜半導體層118例 ，型摻雜半導體層114與Ρ型 ’’、、刀別摻雜Ν型摻質與ρ型摻質的 201140878 HP981101 34088twf.doc/n 氮化蘇。料由N赌料物層114流進主動 層^後，可能因氮化錄(_)層的能階不高而溢流 (overflo啦P型摻雜半導體層m。另一方面電洞由p 型摻雜半導财118流進絲層ιΐ6後，可能因氮化錄 (GaN)層的能階不高而溢流(〇__至n型摻雜半導體層 14如此來，發光二極體1〇〇的效率將會衰減。 【發明内容】 本發明提供-種發光二體，可維持良好的工作效率。 一々本發明提出一種發光二極體，包括一第一型束缚層、 一第-型束缚層、—主動層以及—第—阻障層。主動層配 置於第型束缚層與第二型束缚層之間。第一阻障層配置 於主動層與第—型束縛層之間。第—阻障層包括至少一第 -層間阻障層以及至少一第二層間阻障層。第一層間阻障 層中的至少一者位於至少一第二層間阻障層與主動層之 間’i其=至少一第一層間阻障層的材質包括AlxGai_xN，而 至少一第二層間阻障層的材質包括AlyGai_yN，0<x,ygl， 且 x<y 〇 在本發明之一實施例中，上述χ<0.35，且〇.2^y$l。 在本發明之一實施例中，上述之第一型束缚層為一 p 型摻雜半導體層，而第二型束觸為-η型摻雜半導體 層。此¥，第一層間阻障層的材質包括ρ型摻雜的201140878 HP981101 34088twf.doc/n VI. Description of the invention: [Technical field to which the invention pertains] The invention relates to a semiconductor, and has a characteristic shape. [A prior art] In recent years, due to the luminescence of a light-emitting diode In some fields, light-emitting diodes have gradually replaced the lifting, so that: for scanner light sources requiring high-speed reaction, liquid crystal display is a broadband-semiconductor material, its wavelength of light is included; The band, therefore, such as nitrogen _ (GaNf3 ^ y see light and purple for the application of the light-emitting diode A.,, the known nitrogen compound, 1, the stomach is shown as a kind of hair _ foot reference Diode uo 2:: rough cross-section schematic. Please semiconductor layer 114, an active reed includes a substrate 112, - N-type doping - electrode E1 and - electrode Ε / - type doped semiconductor layer 118, placed On the substrate 112, the main semiconductor layer (10) is provided with (1) and the P-type doped semiconductor layer = 6 is disposed between the _ doped semiconductor layer and the doped semiconductor layer 118. In addition, the electrode Ε1 is disposed on the conductor layer 114, and the electrode Ε2 is disposed on the erbium type Semi-light-emitting diode 11 Μ, Μ doped semiconductor layer 118 cases, type doped semiconductor layer 114 and Ρ type '', 刀 别 doped Ν type dopant and p-type dopant 201140878 HP981101 34088twf.doc /n nitriding sulphide. After the material layer 114 flows into the active layer ^, it may overflow due to the low energy level of the nitride (_) layer (overflo P-doped semiconductor layer m. On the one hand, after the hole is flown into the wire layer ιΐ6 by the p-type doped semiconductor, it may overflow due to the low energy level of the nitride (GaN) layer (the 〇__ to n-type doped semiconductor layer 14 is so The efficiency of the light-emitting diode 1 将会 will be attenuated. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode that can maintain good working efficiency. The present invention provides a light-emitting diode, including a first type. a tie layer, a first-type tie layer, an active layer, and a first-type barrier layer. The active layer is disposed between the first-type tie layer and the second-type tie layer. The first barrier layer is disposed on the active layer and the first layer The first barrier layer includes at least one inter-layer barrier layer and at least one second interlayer barrier layer. The first interlayer barrier At least one of the layers is located between the at least one second interlayer barrier layer and the active layer. The material of the at least one first interlayer barrier layer comprises AlxGai_xN, and the material of the at least one second interlayer barrier layer comprises A lyGai_yN, 0 < x, ygl, and x < y 〇 In an embodiment of the invention, the above χ < 0.35, and 〇. 2 ^ y $ l. In an embodiment of the invention, the first type The tie layer is a p-type doped semiconductor layer, and the second type beam is a -n type doped semiconductor layer. This ¥, the material of the first interlayer barrier layer includes p-type doping
AlxGa^N ’而第二層間阻障層的材質包括ρ型摻雜的 AlyGa^ylST。 201140878 HP981101 34088twf.doc/n 在本發明之一實施例中，上述之第一型束缚層為一 η 型摻雜半導體層，而第二型束缚層為一 Ρ型摻雜半導體 層。此時，第一層間阻障層的材質包括η型摻雜的 AlxGai_xN，而第二層間阻障層的材質包括η型摻雜的 AlyGa!-yN。 在本發明之一實施例中，上述之第二層間阻障層的厚 度由lA至100nm。 在本發明之一實施例中，上述之第一層間阻障層的數 量為多個，且部分第一層間阻障層位於第二層間阻障層與 主動層之間，另一部份第一層間阻障層位於第二層間阻障 層與第一型束缚層之間。此外，發光二極體更包括多個波 導層(waveguide layer)，波導層各自地配置於相鄰的第一層 間阻障層之間。在一實施例中，第二層間阻障層的數量也 可為多個。並且，又一部份第一層間阻障層各自地位於相 鄰的第二層間阻障層之間。此時，多個波導層更可各自地 配置於相鄰的第一層間阻障層之間以及相鄰的第二層間阻 障層之間。 在本發明之一實施例中，上述之發光二極體更包括一 第二阻障層，配置於主動層與第二型束缚層之間。第二阻 障層包括至少一第三層間阻障層以及至少一第四層間阻障 層，且第三層間阻障層中的至少一者位於第四層間阻障層 與主動層之間，其中第三層間阻障層的材質包括 AUGauN，而第四層間阻障層的材質包括AUGa^N， 〇<w,z$ 1，且 z<w。 201140878 HP981101 34088twf.doc/n 在本發明之一實施例中，上述之y值例如 阻障層的兩側向中間漸增。 ^ Θ 基於上述，本發明在發光二極體的束缚層與主 :置-阻障層，其包括不同能隙的層間阻層二 電子不容易溢流至主動層旁的㈣=導 組層’而笔洞也不容易溢流至主動層 麟 層。如此一來，發光二極體可維持良好的效率+導脰 為讓本發明之上述特徵和優點能更明顯易懂，下 舉貫施例，並配合所附圖式作詳細說明如下。、 【實施方式】 示為本發明之一實施例的發光二極體的剖面示 二v二圖上發光二極體200包括一第-型束缚層 爲240。+ 1束、，可層220、一主動層230以及一第一阻障 ^。冑層230配置於第一型束缚層210與第二型束 220之間。第一阻障層24〇配置於主動層與第一 ，番Ϊ層210之間。在本實施例巾’主動層230例如是-夕置子井層，而第一型束缚層210以及第二型束缚声22〇 捧雜的半導體層’其中第一型束缚層210的摻曰雜型 ’怒5於第二型束縛層22〇的摻雜形態。第一阻障層24〇 的能階則高於第—型束缚層210以及主動層230。 =例來說’第一型束縛層21〇以及第二型束缚層22〇 ^別為㈣摻雜的半導體層以及η型摻雜的半導體層。發 “一極體200發光時，電子例如由第二型束缚層22〇進又 201140878 HP981101 34088twf.doc/n 主動層230。在本實施中，第一阻障層24〇的能階則高於 第一型束缚層210以及主動層230，所以電子流經主動層 230後不易越過第一阻障層24〇而降低了電子溢流的情形。 不過，本發明並不限於此，圖3繪示為本發明之另一 只細例的發光二極體的剖面示意圖。請參照圖3，發光二 極體300包括一第一型束缚層31〇、一第二型束缚層32〇、 一主動層330以及一第—阻障層340。主動層330配置於 第一型束缚層310與第二型束缚層320之間。第一阻障層 340配置於主動層330與第一型束缚層31〇之間。在本^ 施例中，主動層330例如是一多重量子井層，而第一型束 缚層310以及第二型束缚層320分別為n型摻雜的半導體 層以及ρ型摻雜的半導體層。 換言之’本實施例與前述實施例不同之處主要在於， 本貫施例的第一型束缚層310為η型摻雜的半導體層。在 本實施例中，第一阻障層340的能階大於第一型束缚層31〇 以及主動層330。所以，電洞由第二型(ρ型）半導體層32〇 流經主動層330後，不易越過第一阻障層340而可以避免 電洞溢流的現象。也就是說，第一阻障層340的設置有助 於維持發光二極體300的工作效率。 圖4繪示為本發明之又一實施例的發光二極體的剖面 示意圖。請參照圖4 ’發光二極體400包括一第一型束缚 層410、一第二型束縛層420、一主動層430、一第一阻障 層440以及一第二阻障層450。主動層430配置於第一型 束縛層410與第二型束缚層420之間。第一阻障層440配 201140878 HP981101 34088twf.doc/n 置於主動層430與第一型束缚層410之間，而第二阻障層 450配置於主動層430與第二型束缚層42〇之間。 曰 在本實施例中，第一型束缚層410與第二型束缚層42〇 中一者為p型摻雜半導體層，而另一者為n型摻雜半導體 層。第一阻障層440以及第二阻障層450分別位於主動層 43 0的相對兩側而有助於抑制電子溢流與電洞溢流的現 象。也就是說，發光二極體400可以維持良好的工作效率。 值得一提的是，以上實施例皆採用剖面結構說明本發 明之發光二極體。不過，為了更加清楚闡述本發明之精神 以下將以數個實施例說明本發明的發光二極體中主動層、 阻P早層以及束缚層之間的能隙關係。在以下的實施例中所 述的主動層可以是前述實施例的主動層230、330、430中 任何一者’而以下所述的束缚層可以是P型擦雜半導體層 或是η型摻雜半導體層’也就是前述實施例所述的第一型 束缚層210、310、410與第二型束缚層220、320、420中 任何一者。另外，以下所述的阻障層可以是前述實施例中 第一阻障層240、340、440與第二阻障層450中任何一者。 圖5〜9分別繒示為本發明之一實施例的發光二極體 中’主動層、阻障層以及束缚層的能隙與相對位置關係， 其中相同的將以相同的符號標示。請先參照圖5，本實施 例係將主動層510、阻障層520以及束缚體層530的相對 位置續'示出來，其中阻障層520位於主動層510與束缚層 530之間。阻障層520包括一第一層間阻障層522以及一 第二層間阻障層524，且第一層間阻障層522位於第二層 201140878 HP981101 34088twf.doc/n 間阻障層524與主動層51〇之間。由圖5可知，主動層51〇 具有里子井結構（quantum well structure )，其中井層（well layer) 512以及障壁層（barrier iayer) 514交替地層壓以 構成主動層510。以本實施例而言，主動層51〇與阻障層 520之間還配置有一波導層(wavegUide iayer)54〇，且波導 層540的能隙實質上近似於或是等同於障壁層514的能隙。 此外’在本實施例中，第一層間阻障層522的材質包 φ 括AlxGai-xN，而第二層間阻障層524的材質包括 AlyGai_yN ’ 0<x，y$i，且 x<y。舉例來說，χ<〇.35，且 〇.2Sy$l。由於鋁含量越高，則層間阻障層的能隙越大。 所以，本實施例的第一層間阻障層522相對第二層間阻障 層524具有較低的能隙。一但電子或電洞由主動層510朝 向束縛層530移動時，第一層間阻障層522與第二層間阻 障層524可提供雙重的阻障作用以降低電子或電洞溢流的 情形’而提升元件的品質。 在一實施例中，當束缚層530為p型摻雜半導體層 # 時’第一層間阻障層522的材質可以是p型摻雜的 AlxGai-xN，而第二層間阻障層524的材質則是p型摻雜的 AlyGa^yN。相似地，當束缚層530為η型摻雜半導體層時， 第一層間阻障層522的材質可以為η型摻雜的AlxGa^N， 而第二層間阻障層524的材質則為η型摻雜的AlyGa^yN。 也就是說，本發明並不限定阻障層520是由本徵(intrinsic) 銘氮化鎵所組成或是由摻雜的(doped)鋁氮化鎵所組成，而 是可以隨不同的需求而選擇性地摻雜或是不摻雜摻質。亦 201140878 HP981101 34088twf.doc/n 即，以下的所有描述中，第一與第二層間阻障層都可以選 擇性地摻雜或是不摻雜摻質。 具體來說，在實際的結構設計上，第二層間阻障層524 的厚度可以由lA至lOOnm。’第一層間阻障層522的厚度 可以選擇性地等於、大於或是小於第二層間阻障層524的 厚度以在能隙分布上構成至少二階(two steps)的分布態 樣。換言之，第一層間阻障層522與第二層間阻障層524 都是在空間中具有一厚度的結構，且此結構在此厚度範圍 内具有實質上相同的化學組成(或是鋁含量）。 當然，上述厚度僅是舉例說明之用，並非用以限定本 發明之發光二極體的實際結構。此外，在本實施例中，第 一層間阻障層522緊接著波導層540設置，而第二阻障層 524緊接著第一阻障層522設置，且摻雜半導體層530也 是緊鄰著第二層間阻障層524而設。所以，在相鄰兩層之 間能隙的變化呈現驟然躍升的態樣。 不過，在其他的實施例中，如圖6所示，任何相鄰兩 層之間可更設置有一過度層550,以使能隙在不同層之間 呈現漸增或漸減的變化趨勢。也就是說，波導層540與第 一層間阻障層522之間、第一阻障層522與第二阻障層524 之間以及第二阻障層524與束缚層53〇之間都配置有過度 層550，其呈現斜的(inclined)能階變化趨勢。另外，圖6 雖以直線繪示過度層550的能隙分布，不過隨著實際的設 計需求，過度層550的能隙分布也可以是呈現弧線的分 布。值得一提的是，在以下的所有實施例中雖都未繪示出 201140878 HP981101 34088twf.doc/n 過度層550，不過在實際的應时，任何相鄰兩層之間都 可以選擇性的配置有過度層55〇。所以，以下實施例並非 侷限於圖示中所緣示的態樣。 接著’ 5月參照圖7A，在另-實施例中，第一層間阻 障層522的數量可以為兩個，且其_ 一個第一層間阻障層 522位於第二層間阻障層524與主動層51〇之間，另一個 第-層間阻障層522位於第二層間阻障層似愈束缚声 β 530之^也就是說’第一層間組障層522的數量可依二 不同的需求而為一個或是數個。當然，本發明亦不限定第 -層間阻障層524的數量，並且以下實施例將以多數個第 -層間阻障層524以及多數個第—層間阻障層μ 說明。 當然，本發明並不限定第二層間阻障層524須在一厚 度範圍内具有由固定大小的能隙，或是固定的成分。因此， 請參照圖7B，第二層間阻障層似本身的能隙分布可以是 逐漸增加而後逐漸減低。也就是說，第二層間阻障層524 鲁 +的材質為A1yGai'yN時’y值的大小可以由第二層間阻障 f 524的兩側向中間逐漸增加，其中增加的速率可以是固 定的或是非固定的。換言之，圖7B雖以直線繪示第二層 間阻障層524的能隙分布，不過隨著實際的設計需求，第 -層障層M4的能隙分布也可以是呈現弧線的分布。 ρ清麥照圖8，在本實施例中，第一層間阻障層522以 及第二層間阻障層524的數量皆為多個。部分第一層間阻 障層522位於第二層間阻障層524與主動層510之間，另 11 201140878 HP98110I 34088twf.doc/n 一部伤第一層間阻障層522位於第二層間阻障層524與束 缚層530之間。此外，相鄰的第—層間阻障層522之間以 及相鄰的第二層間阻障層524之間都配置有波導層56〇。 也就是說，阻障層520中，波導層56〇與第一層間阻障層 522係交替地配置’而波導層56〇也與第二層間阻障層52= 交替地配置。換言之，第一層間阻障層522以及第二層間 阻P手層524分別地是以超晶格(SUperiattice)形式形成的。另 外，本實施例的第二層間阻障層524應用於前述實施例的 發光二極體200、300、400時，單一層第二層間阻障層524 的厚度可以由1A至10〇nm’或是所有第二層間阻障層524 的整體厚度是由1A至i〇〇nm。 除此之外，請參照圖9，在本實施例中，相鄰兩第二 層間阻障層524之間配置有一層第一層間阻障層522。也 就是說，本貫施例是以第一層間阻障層522取代圖8中相 鄰兩第二層間阻障層524之間的波導層56G。目7〜9解 示的實施例中，部份的第一層間阻障層5 22係配置於第二 層間阻障層524與束缚層咖之間，不過本發明並不限於 此。在其他的實施例中，第—層間阻障層522可以不配置 於第，層間阻障層524與束缚層53〇之間，而呈現如圖$ 所繪示的能隙變化趨勢，也就是束缚層53〇緊鄰著第二層 間阻障層524而設。 無論層間間隙層的配置方式為何，只要是主動層與束 ，層之序配置有至少—層第—層_隙層與—層第二 ^間間隙m輯到本翻之抑㈣喊電洞溢流的現 201140878 HP981101 34088twf.doc/n 象因此以上的配置方式僅是利用能隙與相對位置的關 係舉例#明，實際上本發明的發光二極體可以隨不同的設 計需求而具有特定的結構。 综上所述，本發明在發光二極體的主動層與束缚層之 間I^至 > 兩種能隙的阻障層。因此，電子或電洞不易穿 過阻障層而有效地降低電子或電洞溢流的現象。如此一 來本么明的發光一極體的工作效率不易衰減而具有更佳 的品質。AlxGa^N' and the material of the second interlayer barrier layer include p-type doped AlyGa^ylST. In an embodiment of the invention, the first type of tie layer is an n-type doped semiconductor layer, and the second type of tie layer is a Ρ-type doped semiconductor layer. At this time, the material of the first interlayer barrier layer includes n-type doped AlxGai_xN, and the material of the second interlayer barrier layer includes n-type doped AlyGa!-yN. In an embodiment of the invention, the thickness of the second interlayer barrier layer is from 1A to 100 nm. In an embodiment of the invention, the number of the first interlayer barrier layers is plural, and a part of the first interlayer barrier layer is located between the second interlayer barrier layer and the active layer, and the other portion The first interlayer barrier layer is between the second interlayer barrier layer and the first type of tie layer. Further, the light emitting diode further includes a plurality of waveguide layers, each of which is disposed between the adjacent first interlayer barrier layers. In an embodiment, the number of the second interlayer barrier layers may also be plural. Also, another portion of the first interlayer barrier layer is located between the adjacent second interlayer barrier layers. At this time, a plurality of waveguide layers may be disposed between the adjacent first interlayer barrier layers and between the adjacent second interlayer barrier layers. In an embodiment of the invention, the light emitting diode further includes a second barrier layer disposed between the active layer and the second type of binding layer. The second barrier layer includes at least one third interlayer barrier layer and at least one fourth interlayer barrier layer, and at least one of the third interlayer barrier layers is located between the fourth interlayer barrier layer and the active layer, wherein The material of the third interlayer barrier layer includes AUGauN, and the material of the fourth interlayer barrier layer includes AUGa^N, 〇<w, z$1, and z<w. 201140878 HP981101 34088twf.doc/n In one embodiment of the invention, the y value described above, for example, the sides of the barrier layer are progressively increasing in the middle. ^ Θ Based on the above, the present invention is in the tie layer of the light-emitting diode and the main: barrier layer, which includes interlayer barrier layers of different energy gaps, and the two electrons do not easily overflow to the active layer (4) = conductive layer] The pen hole does not easily overflow to the active layer. In this way, the light-emitting diode can maintain good efficiency + guidance. The above features and advantages of the present invention can be more clearly understood. The following embodiments are described in detail with reference to the accompanying drawings. [Embodiment] A cross-sectional view of a light-emitting diode according to an embodiment of the present invention shows that the light-emitting diode 200 includes a first-type tie layer 240. + 1 bundle, layer 220, an active layer 230, and a first barrier ^. The germanium layer 230 is disposed between the first type of tie layer 210 and the second type of beam 220. The first barrier layer 24 is disposed between the active layer and the first and the Panyu layer 210. In the present embodiment, the active layer 230 is, for example, a Xishou well layer, and the first type of tie layer 210 and the second type of bound sound 22 are mixed with a semiconductor layer, wherein the first type of tie layer 210 is doped with impurities. The doping pattern of the type 'anger 5' in the second type of binding layer 22〇. The energy barrier of the first barrier layer 24 is higher than that of the first-type tie layer 210 and the active layer 230. = For example, the first type tie layer 21 〇 and the second type tie layer 22 别 are (4) doped semiconductor layers and n-type doped semiconductor layers. When the "one body 200 emits light, the electrons are ejected, for example, by the second type of tie layer 22, and the 201140878 HP981101 34088twf.doc/n active layer 230. In this embodiment, the energy level of the first barrier layer 24 is higher than The first type of the tie layer 210 and the active layer 230, so that the electrons do not easily pass over the first barrier layer 24 after flowing through the active layer 230, thereby reducing the situation of electronic overflow. However, the present invention is not limited thereto, and FIG. 3 illustrates A schematic cross-sectional view of a light-emitting diode according to another example of the present invention. Referring to FIG. 3, the light-emitting diode 300 includes a first-type binding layer 31A, a second-type binding layer 32A, and an active layer. 330 and a first barrier layer 340. The active layer 330 is disposed between the first type of tie layer 310 and the second type of tie layer 320. The first barrier layer 340 is disposed on the active layer 330 and the first type of tie layer 31. In the present embodiment, the active layer 330 is, for example, a multiple quantum well layer, and the first type tie layer 310 and the second type tie layer 320 are respectively an n-type doped semiconductor layer and a p-type doping. In other words, the difference between this embodiment and the foregoing embodiment is mainly that The first type of tie layer 310 of the embodiment is an n-type doped semiconductor layer. In this embodiment, the first barrier layer 340 has a higher energy level than the first type of tie layer 31 and the active layer 330. Therefore, the electricity After the hole is flown through the active layer 330 by the second type (p type) semiconductor layer 32, it is difficult to avoid the overflow of the hole by crossing the first barrier layer 340. That is, the setting of the first barrier layer 340 FIG. 4 is a schematic cross-sectional view of a light emitting diode according to still another embodiment of the present invention. Referring to FIG. 4, the light emitting diode 400 includes a first type of binding. The layer 410, a second type of tie layer 420, an active layer 430, a first barrier layer 440, and a second barrier layer 450. The active layer 430 is disposed on the first type of tie layer 410 and the second type of tie layer 420. The first barrier layer 440 is disposed between the active layer 430 and the first type of tie layer 410, and the second barrier layer 450 is disposed between the active layer 430 and the second type of tie layer. Between 42 。 曰 In this embodiment, one of the first type of tie layer 410 and the second type of tie layer 42 The p-type doped semiconductor layer and the other is an n-type doped semiconductor layer. The first barrier layer 440 and the second barrier layer 450 are respectively located on opposite sides of the active layer 430 to help suppress electron overflow The phenomenon of overflow with the hole. That is to say, the light-emitting diode 400 can maintain good working efficiency. It is worth mentioning that the above embodiments all use the cross-sectional structure to illustrate the light-emitting diode of the present invention. The spirit of the present invention will be clearly explained. The energy gap relationship between the active layer, the early resistive layer and the tie layer in the light-emitting diode of the present invention will be described below in several embodiments. The active layer described in the following embodiments may be any one of the active layers 230, 330, 430 of the foregoing embodiments' and the tie layer described below may be a P-type semiconductor layer or an n-type doping The semiconductor layer 'is any one of the first type of tie layer 210, 310, 410 and the second type tie layer 220, 320, 420 described in the previous embodiments. In addition, the barrier layer described below may be any one of the first barrier layers 240, 340, 440 and the second barrier layer 450 in the foregoing embodiment. 5 to 9 respectively show the energy gap and relative positional relationship of the active layer, the barrier layer and the tie layer in the light-emitting diode according to an embodiment of the present invention, wherein the same symbols will be designated by the same reference numerals. Referring first to FIG. 5, the present embodiment continues to show the relative positions of the active layer 510, the barrier layer 520, and the tie layer 530, wherein the barrier layer 520 is located between the active layer 510 and the tie layer 530. The barrier layer 520 includes a first interlayer barrier layer 522 and a second interlayer barrier layer 524, and the first interlayer barrier layer 522 is located on the second layer 201140878 HP981101 34088twf.doc/n barrier layer 524 and Between the active layers 51〇. As can be seen from Fig. 5, the active layer 51A has a quantum well structure in which a well layer 512 and a barrier iayer 514 are alternately laminated to constitute the active layer 510. In this embodiment, a waveguide layer 54 〇 is disposed between the active layer 51 〇 and the barrier layer 520 , and the energy gap of the waveguide layer 540 is substantially similar to or equivalent to the energy of the barrier layer 514 . Gap. In addition, in the embodiment, the material of the first interlayer barrier layer 522 includes AlxGai-xN, and the material of the second interlayer barrier layer 524 includes AlyGai_yN ' 0<x, y$i, and x<y . For example, χ<〇.35, and 〇.2Sy$l. The higher the aluminum content, the larger the energy gap of the interlayer barrier layer. Therefore, the first interlayer barrier layer 522 of the present embodiment has a lower energy gap than the second interlayer barrier layer 524. As soon as the electron or hole moves from the active layer 510 toward the tie layer 530, the first interlayer barrier layer 522 and the second interlayer barrier layer 524 can provide a double barrier to reduce electron or hole overflow conditions. 'And improve the quality of the components. In an embodiment, when the tie layer 530 is a p-type doped semiconductor layer #, the material of the first interlayer barrier layer 522 may be a p-type doped AlxGai-xN, and the second interlayer barrier layer 524 The material is p-type doped AlyGa^yN. Similarly, when the binding layer 530 is an n-type doped semiconductor layer, the material of the first interlayer barrier layer 522 may be n-type doped AlxGa^N, and the material of the second interlayer barrier layer 524 is η. Type doped AlyGa^yN. That is to say, the present invention does not limit that the barrier layer 520 is composed of intrinsic GaN or composed of doped aluminum gallium nitride, but can be selected according to different needs. Doped or undoped dopants. Also, 201140878 HP981101 34088twf.doc/n That is, in all of the following descriptions, the first and second interlayer barrier layers may be selectively doped or undoped. Specifically, in the actual structural design, the thickness of the second interlayer barrier layer 524 may be from 1A to 100 nm. The thickness of the first interlayer barrier layer 522 may be selectively equal to, greater than, or less than the thickness of the second interlayer barrier layer 524 to form at least a two-step distribution pattern on the energy gap distribution. In other words, the first interlayer barrier layer 522 and the second interlayer barrier layer 524 are both structures having a thickness in space, and the structure has substantially the same chemical composition (or aluminum content) within the thickness range. . Of course, the above thicknesses are for illustrative purposes only and are not intended to limit the actual construction of the light-emitting diodes of the present invention. In addition, in the present embodiment, the first interlayer barrier layer 522 is disposed next to the waveguide layer 540, and the second barrier layer 524 is disposed next to the first barrier layer 522, and the doped semiconductor layer 530 is also adjacent to the first layer. The second interlayer barrier layer 524 is provided. Therefore, the change in the energy gap between adjacent layers exhibits a sudden jump. However, in other embodiments, as shown in Figure 6, an excess layer 550 may be provided between any two adjacent layers to cause the energy gap to exhibit an increasing or decreasing tendency between different layers. That is, between the waveguide layer 540 and the first interlayer barrier layer 522, between the first barrier layer 522 and the second barrier layer 524, and between the second barrier layer 524 and the binding layer 53A. There is an excess layer 550 that exhibits an inclined energy level change trend. In addition, although FIG. 6 shows the energy gap distribution of the excessive layer 550 in a straight line, the energy gap distribution of the excessive layer 550 may also be a distribution of the arc as the actual design requirements. It is worth mentioning that the 201140878 HP981101 34088twf.doc/n excess layer 550 is not shown in all of the following embodiments, but in actual time, any adjacent two layers can be selectively configured. There are over 55 layers. Therefore, the following embodiments are not limited to the aspects shown in the drawings. Next, referring to FIG. 7A, in another embodiment, the number of the first interlayer barrier layers 522 may be two, and a first interlayer barrier layer 522 is located at the second interlayer barrier layer 524. Between the active layer 51 and the other, the first interlayer barrier layer 522 is located in the second interlayer barrier layer, and the number of the first interlayer barrier layer 522 can be different. The demand is one or several. Of course, the present invention also does not limit the number of the first interlayer barrier layers 524, and the following embodiments will be described by a plurality of first interlayer barrier layers 524 and a plurality of interlayer barrier layers μ. Of course, the present invention does not limit the second interlayer barrier layer 524 to have a fixed-size energy gap or a fixed composition within a thickness range. Therefore, referring to FIG. 7B, the energy gap distribution of the second interlayer barrier layer itself may be gradually increased and then gradually decreased. That is to say, when the material of the second interlayer barrier layer 524 is +1yGai'yN, the size of the 'y value can be gradually increased from the two sides of the second interlayer barrier f 524 to the middle, wherein the rate of increase can be fixed. Or not fixed. In other words, although FIG. 7B shows the energy gap distribution of the second interlayer barrier layer 524 in a straight line, the energy gap distribution of the first barrier layer M4 may also be a distribution of the arcs as the actual design requirements. In the present embodiment, the number of the first interlayer barrier layer 522 and the second interlayer barrier layer 524 is plural. A portion of the first interlayer barrier layer 522 is located between the second interlayer barrier layer 524 and the active layer 510, and another 11 201140878 HP98110I 34088twf.doc/n a first interlayer barrier layer 522 is located between the second interlayer barrier layer Between layer 524 and tie layer 530. Further, a waveguide layer 56 is disposed between the adjacent first interlayer barrier layers 522 and between the adjacent second interlayer barrier layers 524. That is, in the barrier layer 520, the waveguide layer 56 is alternately disposed with the first interlayer barrier layer 522, and the waveguide layer 56 is also alternately disposed with the second interlayer barrier layer 52=. In other words, the first interlayer barrier layer 522 and the second interlayer resistive P layer 524 are respectively formed in the form of a superlattice. In addition, when the second interlayer barrier layer 524 of the present embodiment is applied to the light emitting diodes 200, 300, and 400 of the foregoing embodiment, the thickness of the single layer second interlayer barrier layer 524 may be from 1 A to 10 〇 nm' or It is the overall thickness of all of the second interlayer barrier layers 524 from 1A to i〇〇nm. In addition, referring to FIG. 9, in the present embodiment, a first interlayer barrier layer 522 is disposed between adjacent two second interlayer barrier layers 524. That is, the present embodiment replaces the waveguide layer 56G between the adjacent two second interlayer barrier layers 524 in Fig. 8 by the first interlayer barrier layer 522. In the embodiment illustrated in FIGS. 7 to 9, a part of the first interlayer barrier layer 522 is disposed between the second interlayer barrier layer 524 and the tie layer, but the present invention is not limited thereto. In other embodiments, the first interlayer barrier layer 522 may not be disposed between the interlayer barrier layer 524 and the binding layer 53A, and exhibits a trend of energy gap change as shown in FIG. Layer 53 is disposed adjacent to second interlayer barrier layer 524. Regardless of the arrangement of the interlayer gap layer, as long as it is the active layer and the beam, the order of the layers is configured with at least the layer-layer layer--the gap layer and the second layer gap between the layers and the second layer. The current configuration of 201140878 HP981101 34088twf.doc/n is therefore only the relationship between the energy gap and the relative position is used. In fact, the light-emitting diode of the present invention can have a specific structure according to different design requirements. . In summary, the present invention is a barrier layer of two energy gaps between the active layer and the tie layer of the light-emitting diode. Therefore, electrons or holes are less likely to pass through the barrier layer and effectively reduce electron or hole overflow. As a result, the luminous efficiency of the luminous body of the present invention is not easily attenuated and has better quality.
雖,、、、:本發明已以貫施例揭露如上，然其並非用以限定 本發月任何所屬技術領域中具有通常知識者，在不脫離 t明之精神和範圍内’當可作些許之更動與潤飾，故本 發明之保護_當視後社巾請糊翻所界定者為準。 【圖式簡單說明】 圖1繪示為習知的一種發光二極體的剖面示意圖。 圖2繪不為本發明之一實施例的發光二極體的剖面示 意圖 一圖3、’.g示為本發明之另—實施例的發光二極體的剖面 不思圖。 一立圖4、’會示為本發明之又—實施例的發光二極體的剖面 不思圖。 =〜7八、7B〜9分別繪示為本發明之一實施例的發光 胃 芏動層、阻障層以及束缚層的能隙與相對位置 關係。 201140878 HP981101 34088twf.doc/n 【主要符號說明】 110、200、300、400 :發光二極體 112 :基板 114 : N型摻雜半導體層 116、230、330、430、510 :主動層 118 :P型摻雜半導體層 210、310、410 :第一型束缚層 220、320、420 :第二型束缚層 240、340、440 :第一阻障層 · 450 :第二阻障層 512 :井層 514 :障壁層 520 :阻障層 522 :第一層間阻障層 524 :第二層間阻障層 530 :束縛層 540、560 :波導層 φ 550 :過渡層 E1 :電極 E2 :電極 14The present invention has been disclosed in the above embodiments, but it is not intended to limit the ordinary knowledge of any of the technical fields of the present invention, and may be used as a part of the spirit and scope of the present invention. More action and retouching, so the protection of the invention _ when the rear view of the social towel please be defined as the standard. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a conventional light-emitting diode. Fig. 2 is a cross-sectional view showing a light emitting diode which is not an embodiment of the present invention. Fig. 3 and Fig. 3 are views showing a cross section of a light emitting diode according to another embodiment of the present invention. An elevational view of a light-emitting diode of an embodiment of the present invention is shown in Fig. 4. = 〜7 八, 7B 〜9 respectively show the energy gap and relative positional relationship of the luminescent gastric turbulence layer, the barrier layer and the binding layer according to an embodiment of the present invention. 201140878 HP981101 34088twf.doc/n [Main Symbol Description] 110, 200, 300, 400: Light Emitting Diode 112: Substrate 114: N-type Doped Semiconductor Layer 116, 230, 330, 430, 510: Active Layer 118: P Type doped semiconductor layers 210, 310, 410: first type tie layer 220, 320, 420: second type tie layer 240, 340, 440: first barrier layer 450: second barrier layer 512: well layer 514: barrier layer 520: barrier layer 522: first interlayer barrier layer 524: second interlayer barrier layer 530: tie layer 540, 560: waveguide layer φ 550: transition layer E1: electrode E2: electrode 14