201140716 六、發明說明： 【發明所屬之技彳椅領域】 發明領域 本發明係有關於内藏電路零件模組及内藏電路零件模 組之製造方法。201140716 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a built-in circuit component module and a built-in circuit component module.
t H 發明背景 隨著近年電子機器之小型化、薄型化、高機能化，對 安裝於印刷基板上之電子零件之高密度安裝化需求益增， 且安裝有電子零件之電路基板更加需要高機能化。在此狀 況下’便開發了 一種將電子零件埋入基板中之内藏零件基 板(參照專利文獻1為例）。 内藏零件基板係將通常安裝於印刷基板表面之主動零 件（例如半導體元件）或被動零件（例如電容器）埋入基板 中’故可削減基板面積。又，相較於表面安裝者，可提高 配置電子零件之自由度，因此可望藉由使電子零件間之佈 線最佳化，達到改善高頻特性等效果。 時至今曰’内藏有電子零件之LTCC(low temperature cofired ceramics)基板業已實際運用於陶瓷基板之領域中， 但因容易嚴重破裂而難以運用在大型基板上，且因需要高 溫處理以致無法内藏LSI之類半導體元件，如此種種限制極 多。 因此’於用樹脂製成之印刷基板中内藏零件之内藏零 件基板在最近受到矚目，此不同於LTCC基板，對基板大小 201140716 之限制少，並具有可内藏LSI之優點。 其次，參照第9圖，說明專利文獻丨所揭示之内藏零件 基板（内藏電路零件模組）。第9圖所示之内藏電路零件模組 400，係由一由絕緣性基板401a、401b及401c積層而成之基 板401、形成於基板401之主面及内部之佈線圖案4〇2a、 402b、402c及402d、及配置於基板40丨内部並連接佈線圖案 之電路零件403a、403b構成。佈線圖案4〇2a、402b、402c 及402d係藉由内部通路404形成電性連接，此外絕緣性基板 401a、401b及401c係由含有無機填充劑與熱固性樹脂之混 合物構成。以内部通路連接法進行之電性連接可於所需之 位置進行層間連接，係一可有效使佈線達到短佈線化效果 之構造。 使用内部通路連接法者，揭示了一種以網版印刷法於 内部通路填充導電性樹脂組成物之工法（參照專利文獻2為 例）。同時並揭示-種藉由使用多孔性基材作為構成絕緣基 板之材料，於加壓加熱程序中壓碎前述多孔性基材之空 孔，提高厚度方向（Z方向）之壓縮率，並提高導電性樹脂組 成物之導電率之工法。 此外並揭示，為以網版印刷法於内部通路填充導電性 樹脂組成物，故使用一於絕緣基板黏貼覆蓋膜之程序、一 進行孔加工之程序、一填充導電性樹脂組成物之程序、及 一剝離覆蓋膜之程序。 先前技術文獻 專利文獻 ⑧ 4 201140716 【專利文獻1】日本專利公開公報特開平第11 -220262號 【專利文獻2】曰本專利公開公報特開平第6-268345號 C發明内容3 發明概要 發明欲解決之課題 然而，過去以内部導通孔連接法完成之基板，係由多 孔性基材之樹脂系材料構成，因而有導熱度低之問題。對 内藏電路零件模組而言，隨著電路零件之安裝密度越高， 越需要發散零件所產生之熱’但習知之基板無法充分散 熱’導致内藏電路零件模組之可靠度下降。 另一方面，若為提高導熱度而將陶瓷粉等作為基板之 材料並進行高密度填充，則Z方向之壓縮率變低，從而有導 電性樹脂組成物之導電率降低，且層間之電性連接可靠度 下降之問題。特別是相較於—般之印刷基板，内藏電路零 件模組因内藏零件故絕緣樹脂層較厚，因此z方向之壓縮率 降低成為一大課題。 本發明之目的在於考量上述習知内藏電路零件模組之 課題後，提供-種散熱性及紐連接可靠度更為提升之内 藏電路零件模組及其製造方法。 用以解決課題之手段 為達成上述目的’第1本發明係—種利科電性組成物 進行電性㈣連接之内藏電路料触之製造方法 造方法具有下列程序，即： 取 一内部通路形成程序，係於絕緣基板之請之厚度方 201140716 進行電性層間連接之 向設置貫通孔’形成1個或複數個用以 内部通路； 一填充程序，係於前述内部通路填充導電性組成物. -加熱程序，雜由加熱使前㈣部通路之中央部直 徑較開口部直徑縮短； 、° -積曰程序，係於前述絕緣基板之細兩面分 構件並進行積層；及 d 一力:壓加熱程序，係對經積層而成之前述絕緣基板: 素材及别述構件進行加壓及加熱。 二第2本發明乃如第】本發明之内藏電路零件模組: lie方法，更具有下列程序，即： 膜；:黏貼程序，躲前述絕緣基板之素材上點貼覆】 幻離心序’係於前述加熱程序後， 刖述絕緣基板之素材剥離； 前述内部通路形成程序係同時於 緣基板之素材設置—貫通孔； 前述填充程序係藉由網”刷法， 物填充於前述内部通路中。 又，第3本發明乃如 製造方法’㈣内部通路形成二藏電路零件模組之 將前述覆蓋膜自 前述覆蓋膜及前述絕 將前述導電性組成 前述貫通孔 藉由衝孔加工設置 又 -二::::::::::: ⑧ 201140716 前述貫通孔。 又，第5本發明係一種内藏電路零件模組，係藉由第1 〜第4任一本發明之内藏電路零件模組之製造方法製成者； 前述内部通路係呈前述中央部直徑較前述開口部直徑 縮短10%〜50%之形狀。 又，第6本發明乃如第5本發明之内藏電路零件模組， 其中該絕緣基板係由含有無機填充劑與樹脂成分之材料形 成； 前述材料中，前述無機填充劑佔70〜95重量％; 前述樹脂成分中，係含有熱固性樹脂與橡膠成分； 前述橡膠成分係分子量5萬以上，且於前述樹脂中佔70 重量°/。〜95重量％。 又，第7本發明乃如第5本發明之内藏電路零件模組， 係於前述内部通路之全部或部分中配置有電路零件。 又，第8本發明乃如第1本發明之内藏電路零件模組之 製造方法，係具有下列程序，即： 一零件插入程序，係於前述内部通路之全部或部分插 入電路零件；及 一夾持程序，係經由加熱使前述内部通路之中央部直 徑較開口部直徑縮短，以夾持業經插入之前述電路零件； 前述填充程序亦於插入有前述零件之前述内部通路中 填充前述導電性組成物。 發明效果 藉由本發明，可提供一種散熱性及電性連接可靠度更 7 201140716 加提升之内藏電路零件模組及其製造方法。 圖式簡單說明 第1圖係本發明實施型態1之内藏電路零件模組之截面 構成圖。 第2(a)〜（g)圖係用以說明本發明實施型態1之内藏電 路零件模組之製造方法各程序之截面構成圖。 第3圖係本發明實施型態1之變形例之内藏電路零件模 組之截面構成圖。 第4圖係本發明實施型態1之變形例之内藏電路零件模 組之截面構成圖。 第5圖係本發明實施型態2之内藏電路零件模組之截面 構成圖。 第6圖係顯示本發明實施型態2之内藏電路零件模組之 部分擴大截面之電子顯微鏡照片。 第7(a)〜（h)圖係用以說明本發明實施型態2之内藏電 路零件模組之製造方法各程序之截面構成圖。 第8圖係用以說明實施例1之樣本構造之截面構成圖。 第9圖所示者係習知之内藏電路零件模組之構造。 L實施方式;3 用以實施發明之型態 以下參照圖式，就本發明之實施型態之一例進行說明。 (實施型態1) 針對本發明之實施型態1之内藏電路零件模組予以說 201140716 第1圖係本發明實施型態1之内藏電路零件模組之截面 構成圖。如第1圖所示，該實施型態之内藏電路零件模組 100 ’係設有第1基板ΗΠ、第2基板108、夾在第丨基板1〇1與 第2基板108間之内藏零件層11〇。於第1基板及第2基板 108罪内藏零件層11 〇側之主面，分別形成有基板電極1 〇2。 此外’内藏零件層110係具有本發明之絕緣基板一例之 電絕緣性基板10 4、配置於該電絕緣性基板内部之半導體晶 片105及晶片零件1〇6、及用以電性連接第1基板1〇1之基板 電極102與第2基板108之基板電極102之内部通路1〇3。另， 半導體晶片105及晶片零件106係安裝於第丨基板1〇1之基板 電極102上，半導體晶片1〇5係利用打線接合安裝。又，半 導體晶片105係覆以封裝樹脂109。 進而’内部通路103於電絕緣性基板1〇4之厚度方向（圖 中之Z方向）上之中央部103a寬度，係較開口部i〇3b窄小。 其次’針對本實施型態1之内藏電路零件模組之製造方 法予以說明。 第2(a)〜（g)圖係顯示内藏電路零件模組之製造方 法之一實施型態之截面圖。另，第2(a)〜(g)圖中，省略第丄 圖所示之半導體晶片105及晶片零件1〇6。 首先，如第2(a)圖所示，將無機填充劑與含有樹脂成分 之熱固性樹脂、固化劑及橡膠成分之混合物進行加工，形 成板狀之電絕緣性基板素材202。電絕緣性基板素材2〇2可 藉由混合無機填充劑與呈未固化狀態之熱固性樹脂等做成 糊狀揉合物，並將該糊狀揉合物按一定厚度成型而成。該 201140716 電絕緣性基板素材202於後述第2(g)圖所示之加壓加熱程序 完畢後，藉由熱固性樹脂之熱固化，形成第1圖所示之電絕 緣性基板104。又，電絕緣性基板素材202相當於本發明之 絕緣基板之素材之一例。 於該板狀之電絕緣性基板素材202兩面，配置覆蓋膜 201 ’做成板狀構件210。關於覆蓋膜201，可使用如聚對苯 二曱酸乙二酯或聚苯硫醚之薄膜。上述於電絕緣性基板素 材202黏貼覆蓋膜2〇1之程序即相當於本發明之黏貼程序之 一例。 繼之，如第2(b)圖所示，於板狀構件21〇之所需位置形 成貫通孔’藉以製作形成有内部通路1〇3之板狀構件211。 内部通路1G3可藉由例如雷射加卫、以鑽頭進行加工或以衝 孔機進行鑄模加工形成。另，形成該貫通孔之程序，即相 當於本發明之内部通路形成程序之―例。 形成内部通路1〇3之加工，以利用衝孔機進行之衝孔加 :較佳’此係其具有將應變累積於電絕緣性基板素材2〇2 ，並藉由後續之加熱程序縮小内部 故。藉由衝孔力Q戟内料_3者^ / 果 將通路加X成加I後之形狀呈與衝孔加卫2(b)圖所不: 徑之直線雜，㈣孔加王係1觸約略等 行加JL夕+ 了卡、, '材枓上施以壓縮應力進 之加方法，故形成應變累積於材料中之狀^因 此，藉由後述之加熱料使應變 。 形狀做成則上巾央部啊參部通請之 部職短之形狀。惟，若為 j2_)之直徑較開口 為有^_成分之電絕緣性 10 ⑧ 201140716 土板有時係藉由在加工後釋放應變，縮小通路直徑。 繼之’如第2(c)圖所示，於内部通路ι〇3填充導電性樹 成物111 ’製作板狀構件212。導電性樹脂組成物111， 2充，係將具有内部通路103之電絕緣性基板素材202設 ;印刷機(未予圖示)之工作台上，並直接由覆蓋膜施上 I刷V電性樹脂組成物11Γ。此時，上面之覆蓋膜洲達成 為印刷光罩，與防止電絕緣性基板素材202表面受到污染 之任務另，於内部通路103填充導電性樹脂組成物m/之 私序’即相當於本發明之填充程序之一例。又，導電性樹 成物111於後述之第2(g)圖所示之加壓加熱程序完畢 後’藉由所含之熱固性樹脂之熱固化，形成第1圖所示之導 電性樹脂組成物111。 此時’導電性樹脂組成物ln/之表面形狀，於印刷面 側(參照第2(c)圖中之面22〇)因導電性樹脂組成物之黏性而 内凹形成凹陷狀，相反面側則因押入印刷機之工作台面而 形成平坦形狀。 繼之’如第2(d)圖所示，對板狀構件212進行加熱處理， 使内部通路1〇3之z方向上中央部i〇3a之孔穴直徑較開口部 l〇3b收縮’製作成導電性樹脂組成物11Γ由表面213a、213b 突出之板狀構件213。其中，該加熱處理程序下之加熱溫 度、時間若過長，將使B階段狀態之電絕緣性基板素材2〇2 加速固化’降低後續第2(g)圖所示之加壓加熱程序中之接著 強度’故宜控制在不過度促進固化之程度。藉由加熱處理 程序’釋放電絕緣性基板素材202中之應變以縮小内部通路 11 201140716 103之中央部iG3a之孔穴直徑，因此該熱處理程序宜以高溫 且於短時間内進行。 如此一來，於内部通路1〇3填充導電性樹脂組成物11Γ 後，藉由施以加熱，使内部通路1〇3之中央部1〇33直徑縮 小，擠壓所填充之導電性樹脂組成物1U/形成由内部通路 1〇3之開口部10孙鼓出之形狀。該施加熱之程序，即相當於 本發明之加熱程序之一例。 繼之，如第2(e)圖所示，由電絕緣性基板素材2〇2剝離 覆蓋膜2(H，製作導電性樹脂組成物由電絕緣性基板素 材202突出之板狀構件214。另，導電性樹脂組成物ur之 突出部分以鼓出部分205示之。該剝離覆蓋膜2〇1之程序， 即相當於本發明之剝離程序之一例。 其中，過去剝離覆蓋膜201時，有内部通路1〇3中之導 電性樹脂組成物11 Γ因覆蓋膜2〇1拉扯而脫落之情形，但本 實施型態中，因内部通路103之形狀呈中央部1 〇3&較開口部 103b狹小之之形狀，使導電性樹脂組成物11Γ與内部通路 103間之摩擦變大，故可抑制導電性樹脂組成物脫落。 該第2(e)圖所示之導電性樹脂組成物11Γ之鼓出部分 205，對内部通路103之電性連接可靠度有極大影響。如第 2(g)圖所示，因最終形成埋入基板電極丨〇2之形狀，故導電 性樹脂組成物111之鼓出部分205與基板電極1 〇2之厚度 份，壓縮導電性樹脂組成物111'。基本上，壓縮量越大導 電性樹脂組成物111'中之導電填充劑與基板電極102之接 觸面積、及導電填充劑間之接觸面積越大，因此電阻值降 ⑧ 201140716 低，並得到高導電率，且内部通路之品質提高。 在此，可考慮藉由增加基板電極102之厚度，擴大導電 性樹知組成物111之鼓出部分205，但若基板電極1〇2增厚 則無法形成精細之基板圖案’故有所限制。此外若基板電 極102厚，則將基板電極1〇2埋入電絕緣性基板素材2〇2中 時，一旦電絕緣性基板素材202之樹脂流動性不足，將於基 板電極102與電絕緣性基板素材202間產生空隙，而成為絕 緣劣化等之原因。 另外亦可考慮增厚覆蓋膜201以擴大導電性樹脂組成 物11Γ之鼓出部分205 ’但剝離覆蓋膜201時，覆蓋膜2〇1與 導電性樹脂組成物111'之摩擦加大，容易發生前述之導電 性樹脂組成物111'脫落之情形。 因此，本實施型態藉由縮小内部通路1 之中央部1 a 直徑’可擴大導電性樹脂組成物11厂之鼓出部分205，解決 上述課題，並發揮可提高突出份與壓縮率，得到高導電率 之效果。 繼之，如第2⑴、（g)圖所示，將第丨基板1〇1、第2基板 108及板狀構件214對齊重疊並進行加麼形成埋設有電路零 件之板狀體後’猎由對邊板狀體加熱，使電絕緣性基板素 材202中之熱固性樹脂固化，形成電絕緣性基板1〇4，且導 電性樹脂組成物111中之熱固性樹脂亦固化，製成内藏電 路零件之内藏電路零件模組。另，上述第2圖中，省略第1 圖所示之半導體晶片105及晶片零件ι〇6,但於第2(〇圖之第 2基板108之基板電極102中業已安裝半導體晶片1〇5及晶片 13 201140716 零件ι〇6之狀態下，卩、要進行帛丨基板1G1、板狀構件川及 第2基板1〇8之加壓即可。再者，加壓時，為保護半導體零 件105,宜覆以封裝樹脂1〇9(參照第丨圖）。由上述第2⑺圖可 知，將第1基板1(H、第2基板1〇8及板狀構件214對齊重疊之 程序，即相當於本發明之積層程序之一例。又對重疊而 成者進行加壓、加熱之料，相#於本發明之加壓加熱程 序之一例。此外，第1基板1〇1及第2基板1〇8則相當於本發 明之構件之一例。 又，加熱係以電絕緣性基板素材202及導電性樹脂組成 物111中之熱固性樹脂產生固化之溫度以上之溫度（例如 150C〜260 C)進行。藉由該加熱，可使基板電極1〇2、電 路零件（半導體晶片105、晶片零件1〇6)與電絕緣性基板1〇4 間形成穩固之機械性接著。此外，藉由内部通路1 中之導 電性樹脂組成物111，可電性連接第丨基板101之基板電極 102與第2基板1G8之基板電極1〇2。另，藉由加熱使電絕緣 性基板素材202及導電性樹脂組成物ur中之熱固性樹脂 固化時，在加熱之同時，以l〇kg/cm2〜2〇〇kg/cm2之壓力進 行加壓，可提升電路零件模組之機械性強度（以下實施型態 中亦同）。 本實施型態1所示之内藏電路零件模組1〇〇，可藉由電 絕緣性基板104所含之無機填充劑達到高導熱率，故可迅速 傳導電路零件（半導體晶片丨05)所產生之熱。因此’可製得 一可靠度高之内藏電路零件模組。 又，内藏電路零件模組100中，具有用以於電絕緣性基 ⑧ 14 201140716 板104進行層間連接之内部通路103，其形狀係加工成電絕 緣性基板104之厚度方向中央部103a之直徑較開口部丨❹儿 之直徑縮短之狀態。 如此一來，藉由内部通路103之中央部1〇3义縮小可形 成導電性樹脂組《11Γ之鼓出部分205,因此在加壓加熱 程序中導電性樹脂組成物11Γ於ζ方向(厚度方向)上之壓縮 率變大，並得到高導電性。 又，由於内部通路103之中央部1033縮小，因此内部通 路103之壁面與導電賴驗成物11Γ之摩擦變大，且於熱 震測試等長期可靠度測試下，可維持内部通路⑻之壁面與 導電性樹脂組成物11厂之黏附強度，從而可抑制裂隙產 生，改善内部通路之可靠度。 進而’在形成電絕緣性基板1G4之材料中添加橡膠成 分’具有可擴大衝孔加所累積之應變，並可再縮小内部 通路103之中央部103a之直徑，增加内料路開口部1〇财卜 之導電性樹脂組成物11Γ鼓出量之效果。因此，可於第2(幻 圖所示之加壓加熱程序時提高導電性樹脂組成物之壓縮 率，故可使導電率提升。 又，該實施型態1所示之内藏電路零件模組1〇〇中，上 下之基板電極102係藉由填充於電絕緣性基板1〇4之内部通 路103中之導f性樹脂組成物lu連接，散熱性亦佳。因此， 内藏電路零件模組100可高密度安裝電路零件。 其次，詳細說明上述本實施型態丨之内藏電路零件模組 100之構造及製造方法。 15 201140716 如上所述’電絕緣性基板丨〇 4係由含有無機填充劑與樹 脂成分之混合物形成’樹脂成分包含熱固性樹脂、固化劑 及橡膠成分。且該混合物中，宜含有無機填充劑7〇重量〇/0 〜95重量％。進而’樹脂成分中（樹脂成分設為1〇〇)，含有 分子量5萬以上之橡膠成分且佔2〇重量％〜6〇重量❶/。更佳。 又’本發明所用之熱固性樹脂並無特殊限制，理想者 為環氧樹脂’並宜將常溫下呈液狀之樹脂與常溫下呈固體 狀之樹脂混合使用。液狀樹脂可舉Epik〇te828(日文：工匕。BACKGROUND OF THE INVENTION With the miniaturization, thinning, and high performance of electronic devices in recent years, the demand for high-density mounting of electronic components mounted on printed substrates has increased, and circuit boards equipped with electronic components have required higher functions. Chemical. Under this circumstance, a built-in component substrate in which electronic components are embedded in a substrate has been developed (see Patent Document 1 as an example). The built-in component substrate is formed by embedding active components (for example, semiconductor elements) or passive components (for example, capacitors) normally mounted on the surface of the printed substrate into the substrate. Further, compared with the surface mounter, the degree of freedom in arranging the electronic components can be improved, and therefore it is expected that the effect of improving the high-frequency characteristics can be improved by optimizing the wiring between the electronic components. LTCC (low temperature cofired ceramics) substrates with electronic components have been put into practical use in the field of ceramic substrates, but they are difficult to apply to large substrates due to easy cracking, and they cannot be built due to high temperature processing. There are many such limitations in semiconductor components such as LSI. Therefore, the built-in component substrate in the printed circuit board made of resin has recently attracted attention, which is different from the LTCC substrate, and has a limitation on the substrate size 201140716, and has the advantage of being able to incorporate an LSI. Next, referring to Fig. 9, a built-in component substrate (built-in circuit component module) disclosed in the patent document will be described. The built-in circuit component module 400 shown in FIG. 9 is a substrate 401 formed by laminating insulating substrates 401a, 401b, and 401c, and wiring patterns 4〇2a and 402b formed on the main surface and the inside of the substrate 401. And 402c and 402d, and circuit components 403a and 403b which are disposed inside the substrate 40A and are connected to the wiring pattern. The wiring patterns 4A, 2b, 402b, 402c, and 402d are electrically connected by the internal via 404, and the insulating substrates 401a, 401b, and 401c are composed of a mixture containing an inorganic filler and a thermosetting resin. The electrical connection by the internal via connection method enables interlayer connection at a desired position, and is a structure that can effectively achieve a short wiring effect of the wiring. A method of filling a conductive resin composition in an internal passage by a screen printing method has been disclosed by using an internal via connection method (see Patent Document 2 as an example). At the same time, it is disclosed that by using a porous substrate as a material constituting the insulating substrate, the pores of the porous substrate are crushed in a pressurization heating process, the compression ratio in the thickness direction (Z direction) is increased, and the conductivity is improved. The method of electrical conductivity of the resin composition. Further, it is disclosed that, in order to fill the conductive resin composition in the internal via by the screen printing method, a procedure of adhering the cover film to the insulating substrate, a process of performing hole processing, a process of filling the conductive resin composition, and A procedure for stripping the cover film. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. However, in the past, the substrate which was completed by the internal via connection method was composed of a resin-based material of a porous substrate, and thus had a problem of low thermal conductivity. For the built-in circuit component module, as the mounting density of the circuit component is higher, the heat generated by the diverging component needs to be increased, but the conventional substrate cannot be sufficiently dissipated, resulting in a decrease in the reliability of the built-in circuit component module. On the other hand, when the ceramic powder or the like is used as the material of the substrate and the high-density filling is performed to improve the thermal conductivity, the compression ratio in the Z direction is lowered, and the conductivity of the conductive resin composition is lowered, and the electrical properties between the layers are improved. The problem of reduced connection reliability. In particular, compared with the conventional printed circuit board, the built-in circuit component module has a thick insulating resin layer due to the built-in components, so that the compression ratio in the z direction is reduced. SUMMARY OF THE INVENTION The object of the present invention is to provide a built-in circuit component module and a method of manufacturing the same that have improved heat dissipation and new connection reliability after considering the above-mentioned problems of the conventional built-in circuit component module. Means for Solving the Problem In order to achieve the above object, the first method of the invention is a method for manufacturing a built-in circuit material in which an electrical (four) connection is made of a lithium-based electrical component, and has the following procedure: The forming procedure is based on the thickness of the insulating substrate. 201140716. The electrical interlayer connection is provided with one or more internal vias for forming the through vias. A filling procedure is performed to fill the conductive vias in the internal vias. - a heating program, wherein the diameter of the central portion of the front (four) portion passage is shorter than the diameter of the opening portion by heating; the ° - accumulation program is applied to the thin two-sided member of the insulating substrate and laminated; and d a force: pressure heating The procedure is for pressing and heating the material and the other insulating members. The second invention is as follows: the built-in circuit component module of the present invention: the lie method has the following procedures, namely: a film; a pasting procedure, hiding the material of the insulating substrate and clicking on the material] After the heating process, the material of the insulating substrate is stripped; the internal path forming process is provided with a through hole at the same time as the material of the edge substrate; the filling process is filled in the internal passage by a mesh brushing method. Further, according to the third aspect of the present invention, in the manufacturing method, the internal cover is formed into the second-storage circuit component module, and the cover film is formed by punching from the cover film and the conductive portion. Further, the fifth invention is a built-in circuit component module, which is a built-in circuit component according to any one of the first to fourth inventions. The method of manufacturing the module is characterized in that the inner passage has a shape in which the diameter of the central portion is shortened by 10% to 50% from the diameter of the opening. Further, the sixth invention is the built-in circuit component of the fifth invention. Group, its The insulating substrate is formed of a material containing an inorganic filler and a resin component. In the above material, the inorganic filler accounts for 70 to 95% by weight; the resin component contains a thermosetting resin and a rubber component; and the rubber component is a molecular weight of 5 Further, the seventh invention is a built-in circuit component module according to the fifth aspect of the present invention, which is disposed in all or part of the internal passage. Further, the eighth invention is the manufacturing method of the built-in circuit component module of the first invention, which has the following procedure, that is, a part insertion program is inserted in all or part of the aforementioned internal passage; a circuit component; and a clamping process for shortening a diameter of a central portion of the inner passage to a diameter of the opening by heating to clamp the circuit component inserted; the filling procedure is also inserted into the inner passage of the component Filling the foregoing conductive composition. Advantageous Effects of Invention According to the present invention, it is possible to provide a heat dissipation and electrical connection reliability more. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional structural view of a built-in circuit component module according to Embodiment 1 of the present invention. 2(a) to (g) FIG. 3 is a cross-sectional structural view showing a procedure of a method for manufacturing a built-in circuit component module according to a first embodiment of the present invention. FIG. 3 is a cross-sectional structural view of a built-in circuit component module according to a modification of the first embodiment of the present invention. Fig. 4 is a cross-sectional structural view of a built-in circuit component module according to a modification of the first embodiment of the present invention. Fig. 5 is a cross-sectional structural view of a built-in circuit component module according to the second embodiment of the present invention. The figure shows an electron micrograph of a partially enlarged cross section of the built-in circuit component module of the embodiment 2 of the present invention. FIGS. 7(a) to (h) are diagrams for explaining the built-in circuit component of the embodiment 2 of the present invention. Module manufacturing method The cross-sectional composition of each program. Fig. 8 is a cross-sectional structural view for explaining the sample structure of the first embodiment. The structure shown in Fig. 9 is a construction of a built-in circuit component module. L. Embodiments 3 Models for Carrying Out the Invention Hereinafter, an embodiment of the present invention will be described with reference to the drawings. (Embodiment 1) A built-in circuit component module according to Embodiment 1 of the present invention is referred to. 201140716 FIG. 1 is a cross-sectional structural view of a built-in circuit component module according to Embodiment 1 of the present invention. As shown in FIG. 1, the built-in circuit component module 100' of this embodiment is provided with a first substrate ΗΠ, a second substrate 108, and a built-in sandwich between the second substrate 1〇1 and the second substrate 108. The part layer is 11〇. The substrate electrode 1 〇 2 is formed on each of the first substrate and the second substrate 108 on the major surface of the component layer 11 . In addition, the built-in component layer 110 includes an electrically insulating substrate 104 having an example of the insulating substrate of the present invention, a semiconductor wafer 105 and a wafer component 1〇6 disposed inside the electrically insulating substrate, and an electrical connection first. The internal path 1 〇 3 of the substrate electrode 102 of the substrate 101 and the substrate electrode 102 of the second substrate 108. Further, the semiconductor wafer 105 and the wafer component 106 are mounted on the substrate electrode 102 of the second substrate 1〇1, and the semiconductor wafer 1〇5 is mounted by wire bonding. Further, the semiconductor wafer 105 is covered with a sealing resin 109. Further, the width of the inner passage 103 in the thickness direction (Z direction in the drawing) of the electrically insulating substrate 1 4 is narrower than the opening i 〇 3b. Next, the manufacturing method of the built-in circuit component module of the present embodiment 1 will be described. The second (a) to (g) drawings show cross-sectional views of one embodiment of the manufacturing method of the built-in circuit component module. Further, in the second (a) to (g) drawings, the semiconductor wafer 105 and the wafer component 1〇6 shown in Fig. 省略 are omitted. First, as shown in Fig. 2(a), a mixture of an inorganic filler and a thermosetting resin containing a resin component, a curing agent, and a rubber component is processed to form a plate-shaped electrically insulating substrate material 202. The electrically insulating substrate material 2〇2 can be formed into a paste-like composition by mixing an inorganic filler with a thermosetting resin in an uncured state, and molding the paste composition into a predetermined thickness. The 201140716 electrically insulating substrate material 202 is subjected to a heat-heating process shown in Fig. 2(g), which will be described later, and then thermally cured by a thermosetting resin to form the electrically insulating substrate 104 shown in Fig. 1. Further, the electrically insulating substrate material 202 corresponds to an example of the material of the insulating substrate of the present invention. The cover film 201' is placed on both sides of the plate-shaped electrically insulating substrate material 202 to form a plate member 210. As the cover film 201, a film such as polyethylene terephthalate or polyphenylene sulfide can be used. The above procedure for adhering the cover film 2〇1 to the electrically insulating substrate material 202 corresponds to an example of the pasting procedure of the present invention. Then, as shown in Fig. 2(b), a through hole ' is formed at a desired position of the plate member 21' to form a plate member 211 in which the internal passage 1?3 is formed. The internal passage 1G3 can be formed by, for example, laser blasting, machining with a drill bit, or die-casting with a punch. Further, the procedure for forming the through hole, that is, the example of the internal passage forming procedure of the present invention. The processing of the internal via 1 〇 3 is performed to punch the punch by a punching machine: preferably, the strain accumulates on the electrically insulating substrate material 2 〇 2 and is reduced by the subsequent heating process. . By punching force Q戟内料_3^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Touching the line and adding the JL eve + the card, the method of applying the compressive stress to the material is formed, so that the strain is accumulated in the material. Therefore, the strain is caused by the heating material described later. The shape is made into the shape of the short section of the head office. However, if the diameter of j2_) is larger than the opening, the electrical insulation of the component is 10 10 201140716. The earth plate sometimes reduces the diameter of the passage by releasing the strain after processing. Then, as shown in Fig. 2(c), the plate-like member 212 is formed by filling the conductive material 111' with the internal passage ι3. The conductive resin composition 111, 2 is charged, and the electrically insulating substrate material 202 having the internal via 103 is provided on a table of a printing machine (not shown), and the brush is applied directly to the cover film. The resin composition was 11 Å. At this time, the upper cover film is formed as a printing mask, and the surface of the electrically insulating substrate material 202 is prevented from being contaminated. The internal passage 103 is filled with the private resin composition m/. An example of a stuffing program. Further, after the conductive heating process shown in the second (g) diagram described later is completed, the conductive resin composition 111 is thermally cured by the thermosetting resin contained therein to form the conductive resin composition shown in Fig. 1 . 111. At this time, the surface shape of the conductive resin composition ln/ is concavely formed on the printing surface side (see the surface 22 of the second (c) drawing) due to the viscosity of the conductive resin composition, and the opposite surface The side is formed into a flat shape by being pushed into the work surface of the printing press. Then, as shown in the second (d) diagram, the plate-shaped member 212 is heat-treated to shrink the hole diameter of the central portion i〇3a in the z direction of the internal passage 1〇3 from the opening portion l〇3b. The conductive resin composition 11 is a plate-like member 213 which is protruded from the surfaces 213a and 213b. However, if the heating temperature and time under the heat treatment program are too long, the electrically insulating substrate material 2〇2 in the B-stage state is accelerated and solidified, and the pressure heating process shown in the subsequent second (g) diagram is lowered. The strength is then controlled to the extent that it does not excessively promote curing. The strain in the electrically insulating substrate material 202 is released by the heat treatment process to reduce the hole diameter of the central portion iG3a of the internal passage 11 201140716 103, and therefore the heat treatment procedure is preferably carried out at a high temperature and in a short time. After the conductive material composition 11Γ is filled in the internal passage 1〇3, the diameter of the central portion 1〇33 of the internal passage 1〇3 is reduced by heating, and the filled conductive resin composition is pressed. 1U/ is formed in a shape that is bulged by the opening portion 10 of the internal passage 1〇3. This procedure of applying heat corresponds to an example of the heating procedure of the present invention. Then, as shown in the second (e), the cover film 2 is peeled off from the electrically insulating substrate material 2〇2, and the plate-like member 214 in which the conductive resin composition protrudes from the electrically insulating substrate material 202 is produced. The protruding portion of the conductive resin composition ur is shown by the bulging portion 205. The procedure for peeling off the cover film 2〇1 corresponds to an example of the peeling procedure of the present invention. The conductive resin composition 11 in the passage 1〇3 is detached by the cover film 2〇1, but in the present embodiment, the shape of the internal passage 103 is the center portion 1〇3& is smaller than the opening portion 103b. In the shape, the friction between the conductive resin composition 11A and the internal passage 103 is increased, so that the conductive resin composition can be prevented from falling off. The conductive resin composition shown in Fig. 2(e) is swelled. The portion 205 has a great influence on the reliability of the electrical connection of the internal via 103. As shown in Fig. 2(g), the shape of the buried substrate electrode 丨〇2 is finally formed, so that the conductive resin composition 111 is bulged. The thickness of the portion 205 and the substrate electrode 1 〇 2, pressure The conductive resin composition 111'. Basically, the larger the amount of compression, the larger the contact area between the conductive filler in the conductive resin composition 111' and the substrate electrode 102, and the contact area between the conductive fillers, so that the resistance value is lowered. 8 201140716 is low, and high conductivity is obtained, and the quality of the internal via is improved. Here, it is conceivable to enlarge the bulging portion 205 of the composition 111 by increasing the thickness of the substrate electrode 102, but if the substrate electrode 1 When the thickness of the 〇2 is thick, the fine substrate pattern cannot be formed. Therefore, if the substrate electrode 102 is thick, when the substrate electrode 1〇2 is buried in the electrically insulating substrate material 2〇2, once the electrically insulating substrate material 202 is used In the case where the fluidity of the resin is insufficient, a gap is formed between the substrate electrode 102 and the electrically insulating substrate material 202, which may cause insulation deterioration or the like. It is also conceivable to thicken the cover film 201 to enlarge the bulging of the conductive resin composition 11 When the cover film 201 is peeled off, the friction between the cover film 2〇1 and the conductive resin composition 111' is increased, and the conductive resin composition 111' is easily peeled off. In the present embodiment, the bulging portion 205 of the conductive resin composition 11 can be enlarged by reducing the diameter of the central portion 1 a of the inner passage 1 to solve the above problems, and the protruding portion and the compression ratio can be improved. The effect of high conductivity is obtained. Then, as shown in the second (1) and (g), the second substrate 1〇1, the second substrate 108, and the plate member 214 are aligned and overlapped to form a buried circuit component. After the plate-shaped body, the hunting is heated by the opposite side plate body to cure the thermosetting resin in the electrically insulating substrate material 202 to form the electrically insulating substrate 1〇4, and the thermosetting resin in the conductive resin composition 111 is also cured. The built-in circuit component module of the built-in circuit component. In the second embodiment, the semiconductor wafer 105 and the chip component ι 6 shown in FIG. 1 are omitted, but the semiconductor wafer 1 〇 5 is mounted on the substrate electrode 102 of the second substrate 108 in FIG. In the state of the wafer 13 201140716 part 〇6, it is sufficient to pressurize the 帛丨 substrate 1G1, the plate member 川, and the second substrate 〇8. Further, in order to protect the semiconductor component 105 during pressurization, It is preferable to cover the encapsulating resin 1〇9 (refer to the second drawing). As is apparent from the above (2), the procedure for aligning the first substrate 1 (H, the second substrate 1 8 and the plate member 214) is equivalent to this. An example of the lamination procedure of the invention, which is a method of pressurizing and heating the superimposed one, and an example of the pressurization heating procedure of the present invention. Further, the first substrate 1〇1 and the second substrate 1〇8 are An example of the member of the present invention is that the heating is performed at a temperature (for example, 150 C to 260 C) at which the thermosetting resin in the electrically insulating substrate material 202 and the conductive resin composition 111 is cured. Heating, the substrate electrode 1 电路 2, circuit components (semiconductor wafer 105, crystal The component 1〇6) forms a stable mechanical relationship with the electrically insulating substrate 1〇4. Further, the substrate electrode 102 of the second substrate 101 can be electrically connected by the conductive resin composition 111 in the internal via 1 and When the thermosetting resin in the electrically insulating substrate material 202 and the conductive resin composition ur is cured by heating, the substrate electrode 1 〇 2 of the second substrate 1G8 is heated at the same time as l〇kg/cm 2 〜2 while heating. Pressurizing the pressure of 〇〇kg/cm2 can improve the mechanical strength of the circuit component module (the same applies to the following embodiments). The built-in circuit component module shown in this embodiment 1 can be Since the inorganic filler contained in the electrically insulating substrate 104 achieves high thermal conductivity, the heat generated by the circuit component (semiconductor wafer 丨 05) can be quickly conducted. Therefore, a highly reliable built-in circuit component mold can be obtained. Further, the built-in circuit component module 100 has an internal passage 103 for interlayer connection to the electrically insulating base 8 14 201140716 plate 104, and the shape thereof is processed into the thickness direction central portion 103a of the electrically insulating substrate 104. The diameter is larger than the opening The state in which the diameter of the child is shortened. Thus, the bulging portion 205 of the conductive resin group "11" can be formed by the central portion of the inner passage 103, so that the conductive resin is composed in the heating process. The compressibility of the object 11 in the ζ direction (thickness direction) becomes large, and high conductivity is obtained. Further, since the central portion 1033 of the internal passage 103 is reduced, the friction between the wall surface of the internal passage 103 and the conductive ray-return material 11 变Large, and long-term reliability test such as thermal shock test, the adhesion strength between the wall surface of the internal passage (8) and the conductive resin composition 11 can be maintained, thereby suppressing the generation of cracks and improving the reliability of the internal passage. Further, 'the addition of the rubber component to the material forming the electrically insulating substrate 1G4' has the ability to increase the strain accumulated by the punching, and can further reduce the diameter of the central portion 103a of the internal passage 103, and increase the opening of the inner passage 1 The effect of the conductive resin composition 11 Γ bulging amount. Therefore, the compression ratio of the conductive resin composition can be increased in the second heating process shown in the magic drawing, so that the conductivity can be improved. Further, the built-in circuit component module shown in the first embodiment In the first step, the upper and lower substrate electrodes 102 are connected by the conductive resin composition lu filled in the internal via 103 of the electrically insulating substrate 1〇4, and the heat dissipation property is also good. Therefore, the built-in circuit component module 100. The circuit component can be mounted at a high density. Next, the structure and manufacturing method of the built-in circuit component module 100 of the present embodiment will be described in detail. 15 201140716 As described above, the 'electrically insulating substrate 丨〇 4 is made of inorganic filler. The mixture of the agent and the resin component forms a 'resin component containing a thermosetting resin, a curing agent, and a rubber component. The mixture preferably contains an inorganic filler of 7 〇 weight / 0 to 95% by weight. Further, 'resin component (resin component 1)), containing a rubber component having a molecular weight of 50,000 or more and accounting for 2% by weight to 6 〇 ❶ /. More preferably. The thermosetting resin used in the present invention is not particularly limited, and is preferably a ring. Resin 'wish to use as a solid and the resin is in the liquid resin at ambient temperature with a mixture of liquid resin may be cited Epik〇te828 (Japanese room temperature: dagger work.
3 卜）、Epikote815 (Japan Epoxy Resin (股)（日文：^ 亇 A 工求年シ(株))製）、Epicl〇n85〇 (日文：工匕夕口夕）、 Epiclon840(大曰本Ink化學（股）（曰文：大日本彳^年化学 (株))製）' WE-2025 (日本Peln〇)^司（日文：日本y 夕只社）製）等為例。又，固體狀樹脂可舉1〇〇1、1〇〇2、1〇〇3 (Japan Epoxy Resin (股)製）等為例。 常溫下呈液狀之樹脂與常溫下呈固體狀之樹脂，於電 絕緣性基板之B階段狀態中，彈性率大為不同。舉例言之， 只用液狀樹脂形成絕緣基板者，於B階段狀態下彈性率過 大，因此產生無法於用以形成内部通路之衝孔加工時保持3 卜), Epikote 815 (Japan Epoxy Resin (Japanese): Japanese ^A 工 シ 工 ) ) ) 、 、 、 E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E (shares) (曰文: Dainippon 彳^年Chemical Co., Ltd.)) WE-2025 (Japan Peln〇)^ Division (Japanese: Japanese y yase only)) as an example. Further, examples of the solid resin include 1〇〇1, 1〇〇2, and 1〇〇3 (made by Japan Epoxy Resin Co., Ltd.). The resin which is liquid at normal temperature and the resin which is solid at normal temperature have a large elastic modulus in the B-stage state of the electrically insulating substrate. For example, if the insulating substrate is formed only of a liquid resin, the modulus of elasticity is too large in the B-stage state, so that it cannot be maintained during the punching process for forming the internal passage.
孔徑之情形。此外只用固體狀樹脂形成絕緣基板者，於B P白狀態下彈性率小，因此衝孔加工時之應變未變大，降 低衝孔加工後之加熱程序（參照第2(d)圖）所帶來之孔徑縮 小效果。 又，基於材料之保存穩定性，固化劑宜使用潛伏性固 化劑。潛伏性固化劑可舉以二氰二胺為代表之潛伏性固化 201140716 劑為例，如2200〜2277 (ThreeB〇nd公司（日文：只y 一求^ 卜、社)製)等。 又，樹脂成分中添加分子量5萬以上之橡膠成分，係因 僅藉由液狀環氧樹脂有時無法確保加熱時可有效極盡縮小 孔八直设之彈性率。樹脂成分中橡膠成分之量若未達2〇重 里/〇有時無法發揮提高彈性率之效果，若超過6〇重量％則 彈陡率過高，將產生衝孔加工時無法保持孔徑之情形。因 此，祕脂成分中橡膠成分之量，宜為2〇重量％以上且60重 量以下。又，該橡膠成分宜為含有環氧基1〜10莫耳％之 丙稀酸橡膠。橡㈣分之端環氧基有左右固化之作用，防 止因添加橡膠成分而導致固化時Tg(玻璃轉移點）急遽下 降進而提升與環氧之相容性。該種橡膠成分，可舉HTR_ 860P-3(帝國化學產業(股)製）等為例。 用以提高電絕緣性基板104之散熱性之無機填充劑，宜 含有選自Al2〇3、MgO、BN、A1N及Si02之至少一種無機填 充劑。藉由使用該等無機填充劑，可製得散熱性佳之電絕 緣性基板。又，使用MgO作為無機填充劑者，可增加電絕 緣性基板之線膨脹係數。又，使用Si〇2(特別是非晶質si〇2) 作為無機填充劑者，可縮小電絕緣性基板之介電常數。此 外，使用BN作為無機填充劑者，可降低線膨脹係數。 無機填充劑相對於用以形成電絕緣性基板丨〇 4之混合 物’宜含有70重量。/。至95重量％。無機填充劑之形狀宜為球 形，平均粒子徑宜為Ο.ΐμπι以上、1〇〇μπι以下。 形成電絕緣性基板之混合物中無機填充劑之量為7〇重 17 201140716 量％以下者，有加壓加熱時樹脂混合物之流動性大，以致 於B階段狀態下之膜厚容易不均之情形。反之，若超過95 重量％ ’則有覆蓋膜等黏貼困難之情形。進而，有B階段狀 態下柔韌性降低’以致處理時容易產生裂痕等之情形。 又，無機填充劑之平均粒子徑為〇·1μιη時，難以於混合 物中添加無機填充劑達70重量％之含有量。無機填充劑之 平均粒子徑為1 ΟΟμηι以上時’則有衝孔加工之可加工性受 阻之情形。又，無機填充劑之粒子徑分佈，宜為混雜小粒 徑填充劑與大粒徑填充劑之雙峰分佈。藉由形成雙峰分 佈，既可高度填充填充劑，並可保有Β階段狀態下樹脂混合 物之流動性。另，粒徑分佈並非以雙峰為限，呈多峰分佈 亦可。該種無機填充劑’可舉AS-20、AS-50(Bg和電工(股) 製）等為例。又，為提升無機填充劑之表面改質及分散性， 宜添加石夕烧偶合劑。所謂碎烧偶合劑，可舉A-187、A-189、 A-1100、A-1160 (Nippon Unicar (股)（曰文：日本二二力一 (株))製）等為例。 另’形成絕緣基板之混合物中，更可含有分散劑、著 色劑、離型劑。 基板電極102係由具導電性之物質組成，例如由銅箔或 導電性樹脂組成物形成。使用銅箔作為基板電極1〇2者，舉 例言之，可使用經電鍍製成之厚度18μπι〜35μΓη左右之鋼 -冶。為提升銅'f|與電絕緣性基板1〇4之接著性，宜使銅羯接 觸電絕緣性基板104該面經過粗化。又，銅箱亦可使用鋼箱 表面業經偶合處理者，或於銅箔表面鍍敷有錫、鋅或鎳者， 201140716 以提升接著性及抗氧化性。此外，基板電極1〇2亦可使用由 蝕刻法或衝鍛法形成之金屬板之引線框架。 本實施型態於電路零件部分，係將主動零件之半導體 晶片105及被動零件之晶片零件1〇6内藏於電絕緣性基板 104内，但僅内藏主動零件或被動零件任一方亦可。 另’主動零件可使用如電晶體、IC、LSI等半導體元件。 半導體元件亦可為半導體裸晶。又，被動零件可使用晶片 狀之電阻、晶片狀之電容器或晶片狀電感器等。 本實施型態1中，半導體晶片1〇5係藉由打線接合安裝 於基板電極102上，但並非以此為限，亦可藉由如覆晶接合 進行安裝。 又’填充於内部通路103中之導電性物質係使用導電性 树月曰組成物111，但凡為熱固性之導電性物質即可（以下實 施型態亦同）。熱固性之導電性物質，舉例言之，可使用金 屬粒子與熱固性樹脂混合而成之導電性樹脂組成物。金屬 粒子可使用金、銀、銅或鎳等。金、銀、銅或錄因導電性 高故適於使用，其中銅因導電性高且泳動少而尤為適用。 熱固性樹脂可使用如環氧樹脂、酚樹脂或氰酸樹脂。其中 又以環氧樹脂之耐熱性高而尤為適用。 又，本實施型態中，係内部通路103之中央部103&直徑 較開口部l〇3b直徑縮窄，相較於内部通路之形狀呈直線形 時，因導電性樹脂組成物111/較突出，故導電率提高，而 呈Z方向中央部l〇3a之直杈較開口部1〇孙之直徑縮短1〇% 〜50%之形狀者，可使内部通路103之可靠度更加提升。舉 19 201140716 例言之，若為10%以下，將有z方向上之壓縮率提升程度 少’不見導電率提升之情形。反之若縮小達50%以上，則 有導電性樹脂組成物nr填充困難之情形。 另’上述實施型態中，係藉由衝孔加工形成内部通路 103 ’但亦可藉由其他加工法(例如雷射加工、鑽孔加工等） 形成。惟，為對電絕緣性基板素材202施加更大壓縮應力， 以產生更大之應變，則以衝孔加工較佳。 又’上述實施型態中’係利用網版印刷法於内部通路 填充導電性樹脂組成物，但並非以此方法為限，舉例言之， 亦可藉由灌注導電性樹脂，將内部通路一一填充。 又，本貫施型態1中第1圖所示之内藏電路零件模組100 顯示，基板電極102係形成於本發明之構件一例之第丨基板 101及第2基板108上，但亦可無第i基板101及第2基板1〇8。 第3圖所示者即此種未設有第i基板1〇1及第2基板ι〇8之内 藏電路零件模組250。製造“冑所示之喊電路零件模組 250時係將第2(f)圖所示之第！基板1〇1及第2基板⑽改為 配置設有基板電極1()2之_構件^進行第2(g)圖所示之 加壓加熱程序後，將_構件自魏雜基板刚剝離製 成内藏電料件模組2S0。此時，_構件相當於本發明之 構件之一例。 又’第1圖中係形成i層夹在基板電極中之内藏零件層 110’但亦可於外側再形成内藏零件層，將内藏零件層做成 多層構造(以下實施型態亦同”第4圖所示者即此種多層構 造之内藏電路零件模組細。第4圖所示之内藏電路零件模 20 ⑧ 201140716 組260係於第1基板101與第2基板l〇8間，設有3層内藏零件 層110 、 261 、 262 。 又，第1圖所示之内藏電路零件模組10〇顯示，於第1基 板101及第2基板108之靠電絕緣性基板104側之相對面，未 設有電路零件，但安裝電路零件亦可。第4圖之内藏電路零 件模組260亦同。又，第3圖所示之内藏電路零件模組250顯 示’於基板電極102之與電絕緣性基板1〇4之相對面側未安 裝有電路零件，但安裝電路零件亦可。藉此，可更高密度 安裝電路零件。 (實施型態2) 以下’針對本發明之實施型態2之内藏電路零件模組予 以說明。本實施型態2之内藏電路零件模組與實施型態1在 基本構造上相同，不同之處在於内部通路内藏有電路零 件。因此，本實施型態2係專注於與實施型態1相異之處進 行說明。另，對於與實施型態1相同之構成部分則標示同一 元件符號。 第5圖係本實施型態2之内藏電路零件模組300之截面 構成圖。第6圖係配置於内部通路103中之晶片零件107之擴 大截面照片。 如第5圖所示，該實施型態之内藏電路零件模組300 中，係設有第1基板101、第2基板108及形成於第1基板101 與第2基板108間之内藏零件層110。且内藏零件層110中設 有電絕緣性基板104、設於第1基板101及第2基板108之靠電 絕緣性基板104側之基板電極102、配置於電絕緣性基板104 21 201140716 内部之半導體晶片105及晶片零件106、為使第1基板ιοί與 第2基板1〇8之基板電極102間形成連接之内部通路1〇3。 進而，如第5圖及第6圖所示，本實施型態2之内藏電路 零件模組300係於内部通路1〇3内設有晶片零件1〇7。又，於 晶片零件107上下設有晶片零件107之電極107a，並藉由填 充於内部通路1 〇3之導電性樹脂組成物111，與基板電極1 〇2 電性連接。 另’電絕緣性基板、導電性樹脂組成物等之材料與實 知型態1所說明者相同。又，第5圖所示之内藏電路零件模 組300顯示’基板電極102係形成於第1基板ιοί及第2基板 108上，但無第丨基板101及第2基板1〇8亦可。 其次’說明本實施型態2之内藏電路零件模組3〇〇之製 造方法。第7(a)〜(h)圖係用以說明本實施型態2之内藏電路 零件模組300之製造方法之截面構成圖。另，第7(a)〜(h)圖 中，將第5圖所說明之半導體晶片1〇5及晶片零件1〇6等予以 省略。 起初，如第7(a)圖所示，將無機填充劑與含有熱固性樹 脂 '固化劑及橡膠成分之混合物進行加工，形成板狀之電 絕緣性基板素材202 ^電絕緣性基板素材2〇2可藉由混合無 機填充劑與呈未固化狀態之熱固性樹脂等做成糊狀揉合 物，並將該糊狀揉合物按一定厚度成型而成。 於該板狀之電絕緣性基板素材202兩面，配置覆蓋膜 2(H，做成板狀構件21(^關於覆蓋膜2〇卜可使用如聚對苯 一甲酸乙一自曰或聚苯硫醚之薄膜。上述於電絕緣性基板素 22 201140716 材202兩面配置覆蓋膜洲之程序即相當於本發明之黏貼程 序之一例。 +繼之，如第7(b)圖所示，於板狀構件210之所需位置形 貝通孔藉以製作形成有内部通路〖的之板狀構件Μ!。 形成該貫通孔之程序，即相當於本發明之㈣通路形成程 序之一例。 、.之，如第7(c)圖所示，於内部通路1〇3插入本發明之 電子零件-例之晶片零件1G7，製成插人有晶片零件ι〇7之 板狀構件312。另’内部通路1()3之孔穴直徑，宜大於所插 入之電子零件之大小。若孔穴直徑小，在插人電子零件時， 將创刮内部通路1G3之壁面，因而有㈣留在零件電極周 邊’阻礙電子零件與導電性樹脂組成物連接之情形。如上 所述’將晶片零件107插入内部通路1〇3之程序，即相當於 本發明之零件插入程序之一例。 1之如第7(d)圖所不，對插入有晶片零件ι〇7之板狀 構件312進行加熱處理，製作成板狀構件3丨3。經由該加敎 處理’使内部通路1G3之中央部職之直徑收縮，以藉内部 通路103之壁面夾持晶片零請，使晶片零件麵定於内 部通路103内。另，該加熱處理程序下之加熱溫度、時間一 長’於後續財再錢行加祕理時將無法再收縮直徑， 故宜控制該收縮達可固定晶片零件1〇7之程度即可。上述藉 由加熱程序使晶片零件1G7受到内部通路103之壁面夾持: 程序，即相當於本發明之夾持程序之一例。 繼之，如第㈣圖所示，於内部通路1G3填充導電性樹 23 201140716 月曰”且成物111 ’製作成板狀構件3丨4。導電性樹脂組成物111' 係由板狀構件313之兩面進行填充，以使内部通路⑻中之 曰曰片零件1G7與基板電極1G2形成電性連接。 利用印刷機由板狀構件313(參照第7⑷圖）之-面填充 導電性樹脂組成物11Γ後，再由相反另- 面以印刷進行導 電吐樹知組成物lu之填充。此時晶片零件與内部通 路103之壁面間若有空隙’導電性樹脂組成物11「將流出而 丨發短路目此’必須藉由第7⑷圖所示之加熱處理程序預 先'肖拜空隙。該填充導電性樹脂組成物11Γ之程序，即相 當於本發明之填充程序之一例。 繼之，如第7(f)圖所示’藉由進行再次加熱處理，使内 部通路103之中央部103a直徑更為收縮，製成導電性樹脂組 成物111 X出之板狀構件315。該加熱處理程序下之加熱溫 度、時間若過長，將細冑段狀態之魏雜基板素材202 加速固化’降低後續加壓加熱程序中之接著強度，故宜控 制在不過度促it@Hb之程度。該第2次㈣處縣序，宜以 較第7剛所示之第1次加熱處理程序高之溫度進行。該加 熱處理程序則相當於本發明之加熱程序之一例。 繼之，如第7(g)圖所示，由第7(f)圖所示之板狀構件化 剝離覆蓋膜2(Π，製作成板狀構件316。過去剝離覆蓋膜如 時，有内部通路1〇3中之導電性樹脂組成物ur因覆蓋祺 2〇1拉扯而脫落之情形，本實施型態中晶片零件1〇7亦有可 能脫落，但_料賴3之中央部脑直徑較開口部咖 窄縮’故壁©與導電性樹脂組成物11Γ及晶片零件1〇7間之 ⑧ 24 201140716 摩擦變大，從而可抑制脫落。該剝離覆蓋膜2〇1之程序，即 相當於本發明之剝離程序之一例。 繼之，如第7(h)圖所示，將第丨基板1〇1、第2基板1〇8 與板狀構件316對齊重疊並進行加壓形成埋設有電路零件 之板狀體後，藉由對該板狀體加熱，使電絕緣性基板素材 202及導電性樹脂組成物11K中之熱固性樹脂固化，製成埋 設有電路零件之内藏電路零件模組雇。另，上述將第^ 板⑻、第2基板108與板狀構件316對齊重疊之程序，即相 當於本發明之積層程序m對重疊而成者進行加 壓、加熱之程序，相當於本發明之加壓加熱程序之一例。 由此可知，本實施之«電路零件模組係利用加 ，處理使内部通路之Z方向中央部收縮，令電子零件受到内 部通路鱗，因此可輕易將電子零件内藏於内部通路中。 藉由進行第7(f)圖所示之第2次加熱處理程序，可 使内部通路更為收縮，提高填充於電子零件上下之導電性 樹脂組成物之壓縮率，故可提升導電率。 又’料作伽人㈣祕愤，進行加熱處理縮 小中央部，因此内部通路之壁面與插人之零件之摩擦變 且於剝離覆蓋膜之程序中，可降低業已插人内部通路 中之零件脫落之可能性。 進而在將電子零件插入内部通路中後，藉由縮小内部 通路之中央部’使插人之電子零件與内部通路之壁面緊密 接合，因此可降低經網版印職填充之導電 深入電子零件與⑽通路間之間隙，造·路之可 25 201140716 如此一來，本實施型態中之内部通路實為非常適於作 為用以内藏電子零件之構造者。 【實施例】 以下說明本發明之具體實施例。 (實施例1) 實施例1係以實施型態1所說明之方法製成内藏電路零 件模組之一例。 該實施例中’液狀環氧樹脂係使用Japan Epoxy Resin(股）製之環氧樹脂(epik〇te828)。固體狀之樹脂則使用 Japan Epoxy Resin(股）製之環氧樹脂（1〇〇1)。潛伏性固化劑 係使用ThreeBond公司製之潛伏性固化劑（2200)。橡膠成分 係使用帝國化學產業（股）製之丙烯酸改質樹脂(HTR-860P -3)。 又，無機填充劑係使用按Al2〇3(昭和電工(股）製AS-20 與AS-40同量混合成者)佔85重量％、液狀環氧樹脂佔2重量 °/〇、固體環氧樹脂佔6重量。/。、橡膠成分佔6重量。/。、固化劑 佔0.3重量％、偶合劑(味之素(股)（曰文：味乃素(株))製，鈦 酸鹽系，46B)佔0.7重量％之比例混合而成之混合物。 其次，說明第2(a)圖所示之板狀構件210之製作方法。 首先，將混合於溶媒中之糊狀混合物按特定量滴在離 型膜上。該糊狀混合物係以球磨機將無機填充劑與樹脂等 混合60分左右製成。離型膜係使用厚度75μιη之聚對苯二甲 酸乙二酯膜，並於膜表面用矽施以離型處理。 其次，於離型膜上塗敷糊狀混合物並以刮刀做成 26 ⑧ 201140716 20〇μΐη之厚度，製得板狀之混合物。繼而’將形成於離型 膜上之板狀混合物連同離型膜一併加熱，並於使板狀混合 物之黏著性消失之條件下進行熱處理。熱處理係維持8〇它 之溫度達30分鐘。藉由該熱處理使板狀混合物失去黏著 性’因此易於剝離離型膜。 繼之，將離型膜剝離板狀混合物，並重疊4片板狀混合 物後，利用覆蓋膜(PPS :聚笨硫醚，厚度16μιη)夾住，並以 lkg/cm2之壓力加壓同時以8〇t之溫度加熱，製成由彳片板 狀混合物重疊而成且黏貼有覆蓋膜2〇1之板狀構件21〇(參 照第2(a)圖）。 / 藉此，可備妥厚度約800μηι、並於兩面形成有覆蓋膜 201之電絕緣性基板素材202。再以衝孔機於電絕緣性基板 素材202連同覆蓋膜201上形成用以進行内部導通孔連接之 貫通孔(直徑0.25mm)(參照第2(b)圖）。 繼之，藉由網版印刷法於該貫通孔中填充導電性樹脂 組成物11 Γ(參照第2(c)圖）^導電性樹脂組成物ur係按球 狀銅粒子佔85重量％、雙酚A型環氧樹脂(Japan Ep〇Xy尺以比 Epoxy製、Epik〇te828)佔3重量。/。'縮水甘油酯系環氧樹脂（東 都化成製、YD-171)佔9重量％、胺加成物固化劑（味之素製、 MY-24)佔3重量％之比例揉合製成者。 其次，對填充有導電性樹脂組成物11Γ之電絕緣性基 板素材202以120°C加熱5分鐘。藉由該程序，形成内部通路 103之該中央部103a孔穴直徑收縮，且所填充之導電性樹脂 組成物11Γ突出之形狀(參照第2(d)圖）。此時，中央部1〇3& 27 201140716 之孔穴直徑係形成較開口部l〇3b收縮約15〜2〇。/。之狀態。 其次，將覆蓋膜201剝離電絕緣性基板素材2〇2(參照第 2(e)圖），並於所需位置進行形成有基板電極1〇2之第丨基板 101及第2基板108、形成有内部通路1〇3之電絕緣性基板素 材202之積層（參照第2(f)圖），並藉由熱壓機對該積層體以熱 壓溫度180。(：、壓力20kg/cm2之條件進行60分鐘之加壓加 熱。 藉由該加熱’使電絕緣性基板素材2〇2中之環氧樹脂及 導電性樹脂組成物11厂中之環氧樹脂固化，並使電絕緣性 基板素材202中之半導體元件（參照第！圖之半導體晶片 1〇5)、基板電極102與電絕緣性基板素材202形成穩固之機 械性連接。此外，藉由該加熱，可使導電性樹脂組成物11Γ 與基板電極102形成電性（内部通路連接)與機械性連接，製 成第8圖所示之内藏電路零件模組270。 該内藏電路零件模組270中，係將500個填充有導電性 樹脂組成物111之内部通路1〇3成列連結，並製成100個如上 所述由500個内部通路1〇3成列連結而成之樣本。 為評價本實施例所製成之内藏電路零件模組之可靠 度’故進行迴焊測試及溫度循環測試。迴焊測試係利用帶 式迴焊測試機，以在最高溫度260°C下達10秒為一循環，反 覆進行10次。又，溫度循環測試係以保持125°C30分鐘後， 保持-60°C之溫度30分鐘之程序為一循環，並反覆進行1000 次循環。 (比較例I) 28 ⑧ 201140716 比較例1之内藏電路零件模組之電絕緣性基板，係使用 按Al2〇3(昭和電工（股）製AS-20與AS-40同量混合成者）85重 量％、液狀環氧樹脂4重量％、固體環氧樹脂1〇重量〇/〇、固 化劑0_3重量％、偶合劑(味之素(股)（曰文：味们素(株))製， 鈦酸鹽系，46B) 0.7重量％之含有量比例組成之混合物作為 無機填充劑而製成者。即，該比較例丨中所用之混合物，相 較於上述實施例1中形成電絕緣性基板之混合物，差別在於 不含橡膠成分。 此外於製造程序部分，未進行第2(d)圖所示之使填充之 導電性樹脂組成物突出之加熱程序，其餘程序則按與實施 例1相同之程序製作。 經迴焊測试及溫度循環測試結果，於任一測試中，本 實施例1之内藏電路零件模組在導電性樹脂組成物之内部 通路連接之電阻值(佈線部分除外，僅内部通路連接之電 值)部分，於測試開始前後變化率係均於10%以内。又 試後觀察内部通路部分之截面，結果並未產生裂隙， 义取’即使 以超音波探傷裝置亦無發現特殊異常之處。 相對於此，比較例1中，内部通路連接之電阻值變4 過10%之樣本超過10% ’且截面觀察下，電阻值料匕超 10%之樣本中’有些可觀察到業已產生裂隙。 °過 匕應係比幸交The case of the aperture. In addition, when the insulating substrate is formed only of a solid resin, the elastic modulus is small in the BP white state, so the strain during the punching process is not increased, and the heating process after the punching process is reduced (see the second (d) diagram). The aperture is reduced by the effect. Further, based on the storage stability of the material, a latent curing agent is preferably used as the curing agent. The latent curing agent can be exemplified by latent curing represented by dicyandiamide. For example, 2200~2277 (ThreeB〇nd company (Japanese: only y 一求^ Bu,)) and the like. Further, when a rubber component having a molecular weight of 50,000 or more is added to the resin component, it is possible to effectively reduce the elastic modulus of the hole directly by the liquid epoxy resin alone. If the amount of the rubber component in the resin component is less than 2 Torr, the effect of increasing the modulus of elasticity may not be exhibited. If the amount is more than 6% by weight, the elastic steepness may be too high, and the pore diameter may not be maintained during the punching process. Therefore, the amount of the rubber component in the secret fat component is preferably 2% by weight or more and 60% by weight or less. Further, the rubber component is preferably an acrylic rubber containing 1 to 10 mol% of an epoxy group. The epoxy group at the end of the rubber has a left-right curing effect, which prevents the Tg (glass transition point) from being sharply lowered during curing due to the addition of the rubber component, thereby improving the compatibility with the epoxy. Examples of such a rubber component include HTR_860P-3 (manufactured by Imperial Chemical Industries Co., Ltd.). The inorganic filler for improving the heat dissipation property of the electrically insulating substrate 104 preferably contains at least one inorganic filler selected from the group consisting of Al2?3, MgO, BN, AlN and SiO2. By using these inorganic fillers, an electrically insulating substrate having excellent heat dissipation properties can be obtained. Further, when MgO is used as the inorganic filler, the linear expansion coefficient of the electrically insulating substrate can be increased. Further, when Si〇2 (especially amorphous si〇2) is used as the inorganic filler, the dielectric constant of the electrically insulating substrate can be reduced. In addition, the use of BN as an inorganic filler reduces the coefficient of linear expansion. The inorganic filler is preferably contained in an amount of 70% by weight with respect to the mixture for forming the electrically insulating substrate. /. Up to 95% by weight. The shape of the inorganic filler is preferably spherical, and the average particle diameter is preferably Ο.ΐμπι or more and 1〇〇μπι or less. When the amount of the inorganic filler in the mixture forming the electrically insulating substrate is 7 〇 weight 17 201140716% or less, the fluidity of the resin mixture is large when pressurized heating, so that the film thickness in the B-stage state is likely to be uneven. . On the other hand, if it exceeds 95% by weight, there is a case where adhesion such as a cover film is difficult. Further, there is a case where the flexibility is lowered in the B-stage state, so that cracks or the like are likely to occur during the treatment. Further, when the average particle diameter of the inorganic filler is 〇·1 μm, it is difficult to add the inorganic filler to the mixture to a content of 70% by weight. When the average particle diameter of the inorganic filler is 1 ΟΟμηι or more, the workability of the punching process is hindered. Further, the particle diameter distribution of the inorganic filler is preferably a bimodal distribution of the mixed small particle diameter filler and the large particle size filler. By forming a bimodal distribution, the filler can be highly filled and the fluidity of the resin mixture in the state of the crucible can be maintained. In addition, the particle size distribution is not limited to a double peak, and a multimodal distribution is also possible. Such an inorganic filler ' can be exemplified by AS-20, AS-50 (Bg and electrician). Further, in order to improve the surface modification and dispersibility of the inorganic filler, it is preferred to add a Shixia coupling agent. Examples of the calcining coupler include A-187, A-189, A-1100, and A-1160 (Nippon Unicar (manufactured by Nippon Seiko Co., Ltd.)). Further, the mixture forming the insulating substrate may further contain a dispersing agent, a coloring agent, and a releasing agent. The substrate electrode 102 is composed of a conductive material, for example, a copper foil or a conductive resin composition. As the substrate electrode 1 2, a copper foil is used, and for example, a steel plated to a thickness of 18 μm to 35 μm can be used. In order to improve the adhesion between the copper 'f| and the electrically insulating substrate 1〇4, it is preferable that the copper bead is electrically roughened by the surface of the electrically insulating substrate 104. In addition, the copper box can also be used for coupling the surface of the steel box, or tin, zinc or nickel is plated on the surface of the copper foil, 201140716 to improve adhesion and oxidation resistance. Further, as the substrate electrode 1 2, a lead frame of a metal plate formed by an etching method or a punching method may be used. In the embodiment of the circuit, the semiconductor wafer 105 of the active component and the wafer component 1〇6 of the passive component are housed in the electrically insulating substrate 104, but only one of the active component or the passive component may be included. Further, the active component can use a semiconductor element such as a transistor, an IC, or an LSI. The semiconductor component can also be a semiconductor die. Further, as the passive component, a wafer-shaped resistor, a wafer-shaped capacitor, or a wafer inductor can be used. In the first embodiment, the semiconductor wafer 1〇5 is mounted on the substrate electrode 102 by wire bonding, but it is not limited thereto, and may be mounted by, for example, flip chip bonding. Further, the conductive material filled in the internal passage 103 is made of a conductive sapphire composition 111, but any thermoconductive conductive material (the same applies to the following embodiments). The thermosetting conductive material may, for example, be a conductive resin composition obtained by mixing metal particles and a thermosetting resin. As the metal particles, gold, silver, copper or nickel can be used. Gold, silver, copper or recordings are suitable for use because of their high conductivity. Among them, copper is particularly suitable because of its high conductivity and low mobility. As the thermosetting resin, for example, an epoxy resin, a phenol resin or a cyanate resin can be used. Among them, epoxy resin is particularly suitable for its high heat resistance. Further, in the present embodiment, the central portion 103 & the diameter of the inner passage 103 is narrower than the diameter of the opening portion 10b, and the conductive resin composition 111 is more prominent than the shape of the inner passage. Therefore, the electrical conductivity is improved, and the straightness of the central portion l〇3a in the Z direction is shortened by 1% to 50% of the diameter of the opening portion 1 and the diameter of the internal passage 103 can be further improved. For example, if the ratio is 10% or less, there will be a small increase in the compression ratio in the z direction, and no increase in conductivity will occur. On the other hand, if the shrinkage is 50% or more, it is difficult to fill the conductive resin composition nr. In the above embodiment, the internal passage 103' is formed by punching, but it may be formed by other processing methods (e.g., laser processing, drilling, etc.). However, in order to apply a larger compressive stress to the electrically insulating substrate material 202 to produce a larger strain, punching is preferred. In the above-mentioned embodiment, the conductive resin composition is filled in the internal passage by the screen printing method, but it is not limited thereto. For example, the internal passage may be infused by injecting the conductive resin. filling. Further, the built-in circuit component module 100 shown in Fig. 1 of the present embodiment 1 shows that the substrate electrode 102 is formed on the second substrate 101 and the second substrate 108 of an example of the member of the present invention, but may be There is no i-th substrate 101 and second substrate 1〇8. The built-in circuit component module 250 in which the ith substrate 1〇1 and the second substrate 〇8 are not provided is shown in Fig. 3. When the "circuit circuit component module 250" shown in Fig. 2 is manufactured, the first substrate 1〇1 and the second substrate (10) shown in Fig. 2(f) are replaced with the _members provided with the substrate electrode 1 () 2 After the pressure heating process shown in Fig. 2(g) is carried out, the _ member is immediately peeled off from the Wei substrate to form the built-in electric material module 2S0. At this time, the _ member corresponds to an example of the member of the present invention. Further, in the first drawing, the built-in component layer 110' in which the i-layer is sandwiched between the substrate electrodes is formed, but the built-in component layer may be formed on the outer side, and the built-in component layer may be formed into a multilayer structure (the same applies to the following embodiments). "The built-in circuit component module of this multilayer structure is as shown in Fig. 4. The built-in circuit component module shown in Fig. 4 is a group of 205 attached to the first substrate 101 and the second substrate 10 The three-layer built-in component layers 110, 261, and 262 are provided between the first substrate 101 and the second substrate 108. The opposite side of the 104 side is not provided with circuit components, but the circuit components can be mounted. The built-in circuit component module 260 of Fig. 4 is also the same. The built-in circuit component module 250 displays that the circuit component is not mounted on the side opposite to the electrically insulating substrate 1〇4 of the substrate electrode 102, but the circuit component may be mounted. Thereby, the circuit component can be mounted at a higher density. (Embodiment 2) Hereinafter, a built-in circuit component module according to Embodiment 2 of the present invention will be described. The built-in circuit component module of this embodiment 2 is identical in basic configuration to the first embodiment. The circuit component is hidden in the internal path. Therefore, the present embodiment 2 is focused on the difference from the embodiment 1. The same component as the embodiment 1 is labeled with the same component symbol. Fig. 5 is a cross-sectional structural view of the built-in circuit component module 300 of the present embodiment 2. Fig. 6 is an enlarged cross-sectional photograph of the wafer component 107 disposed in the internal passage 103. As shown in Fig. 5, In the built-in circuit component module 300 of the embodiment, the first substrate 101, the second substrate 108, and the built-in component layer 110 formed between the first substrate 101 and the second substrate 108 are provided. 110 is provided with an electrically insulating substrate 104, The substrate electrode 102 on the side of the electrically insulating substrate 104 of the first substrate 101 and the second substrate 108, the semiconductor wafer 105 and the wafer component 106 disposed inside the electrically insulating substrate 104 21 201140716, and the first substrate ιοί 2, the internal vias 1〇3 are formed between the substrate electrodes 102 of the substrate 1〇8. Further, as shown in FIGS. 5 and 6, the built-in circuit component module 300 of the present embodiment 2 is connected to the internal via 1 The wafer component 1 is provided in the crucible 3, and the electrode 107a of the wafer component 107 is placed on the wafer component 107, and is electrically connected to the substrate electrode 1 by the conductive resin composition 111 filled in the internal via 1 〇3. 2 Electrical connection. Further, the materials such as the electrically insulating substrate and the conductive resin composition are the same as those described in the first embodiment. Further, the built-in circuit component module 300 shown in Fig. 5 shows that the substrate electrode 102 is formed on the first substrate ι and the second substrate 108, but the second substrate 101 and the second substrate 〇8 may be omitted. Next, a method of manufacturing the built-in circuit component module 3 of the present embodiment 2 will be described. The seventh (a) to (h) drawings are sectional views for explaining the manufacturing method of the built-in circuit component module 300 of the present embodiment 2. Further, in the seventh (a) to (h) drawings, the semiconductor wafer 1 〇 5 and the wafer parts 1 〇 6 and the like described in Fig. 5 are omitted. Initially, as shown in Fig. 7(a), a mixture of an inorganic filler and a thermosetting resin containing a curing agent and a rubber component is processed to form a plate-shaped electrically insulating substrate material 202. Electrically insulating substrate material 2〇2 The paste composition can be formed by mixing an inorganic filler with a thermosetting resin in an uncured state, and the paste composition can be molded to a constant thickness. On both sides of the plate-shaped electrically insulating substrate material 202, a cover film 2 (H is formed as a plate-like member 21) (for the cover film 2, for example, poly(p-phenylene benzoate) or polyphenylene sulfide can be used. The film is disposed on the both sides of the electrically insulating substrate 22, and the film is disposed on both sides of the material 202. This corresponds to an example of the pasting procedure of the present invention. + Subsequently, as shown in Fig. 7(b), the plate member is used. The desired position of the 210-shaped beacon hole is used to form a plate-shaped member having an internal passage formed. The procedure for forming the through-hole is equivalent to an example of the (four) passage forming procedure of the present invention. As shown in Fig. 7(c), the electronic component-example wafer part 1G7 of the present invention is inserted into the internal path 1?3 to form a plate-like member 312 into which the wafer part ι7 is inserted. The other 'internal passage 1() The diameter of the hole of 3 should be larger than the size of the inserted electronic component. If the diameter of the hole is small, when inserting the electronic component, the wall of the internal passage 1G3 will be scraped, and thus (4) remain in the periphery of the electrode of the part to block the electronic parts and conduct electricity. The case where the resin composition is connected. As described above The procedure for inserting the wafer component 107 into the internal passage 1〇3 is an example of the component insertion procedure of the present invention. 1. As shown in Fig. 7(d), the plate member 312 into which the wafer component ι7 is inserted is used. Heat treatment is performed to form the plate-like member 3丨3. The diameter of the central portion of the internal passage 1G3 is contracted by the twisting process, and the wafer is held by the wall surface of the internal passage 103, so that the wafer component surface is fixed. In the internal passage 103. In addition, the heating temperature and the time under the heating process will not be able to shrink the diameter again when the subsequent money is added, so the shrinkage can be controlled to fix the wafer parts 1〇7. The degree is sufficient. The wafer part 1G7 is held by the wall surface of the internal passage 103 by a heating procedure: a program, which is an example of the clamping procedure of the present invention. Then, as shown in the figure (4), the internal passage 1G3 The conductive tree 23 201140716 is formed into a plate member 3丨4. The conductive resin composition 111' is filled on both sides of the plate member 313 so that the inner passage (8) is filled. Sheet part 1G7 with The plate electrode 1G2 is electrically connected to each other. The conductive resin composition 11 is filled by the surface of the plate member 313 (see Fig. 7 (4)) by a printing machine, and then the conductive material is printed by the opposite side. At this time, if there is a gap between the wafer part and the wall surface of the internal passage 103, the conductive resin composition 11 "will flow out and short-circuit", which must be preceded by the heat treatment procedure shown in Fig. 7(4). The procedure of filling the conductive resin composition 11Γ corresponds to an example of the filling procedure of the present invention. Then, as shown in Fig. 7(f), the internal passage 103 is made by performing reheating treatment. The central portion 103a is further contracted in diameter to form a plate-like member 315 from which the conductive resin composition 111 X is formed. If the heating temperature and time under the heating treatment program are too long, the Wei miscellaneous substrate material 202 in the fine-twisted state is accelerated and solidified to reduce the subsequent strength in the subsequent pressurized heating process, so it is preferable to control it without excessively promoting it@Hb. degree. The second (four) county order should be carried out at a higher temperature than the first heat treatment procedure indicated by the seventh. This heat treatment procedure corresponds to an example of the heating procedure of the present invention. Then, as shown in Fig. 7(g), the cover member 2 is formed by the plate-like member shown in Fig. 7(f), and is formed into a plate member 316. In the past, when the cover film was peeled off, there was an inside. In the case where the conductive resin composition ur in the channel 1〇3 is pulled off by the covering 祺2〇1, the wafer part 1〇7 may also fall off in the present embodiment, but the brain diameter of the central portion of the material 3 is relatively small. The opening of the opening portion is reduced between the wall © the conductive resin composition 11Γ and the wafer component 1〇7, and the friction is increased, so that the peeling off of the cover film 2〇1 is equivalent to the procedure. An example of the stripping procedure of the invention. Next, as shown in Fig. 7(h), the second substrate 1〇1 and the second substrate 1〇8 are overlapped with the plate member 316 and pressurized to form a buried circuit component. After the plate-like body is heated, the thermosetting resin in the electrically insulating substrate material 202 and the conductive resin composition 11K is cured by heating the plate-shaped body, and the built-in circuit component module in which the circuit component is embedded is employed. Further, the above-described procedure of aligning the second plate (8) and the second substrate 108 with the plate member 316 is a phase The procedure of pressurizing and heating the superposed stacking program m of the present invention corresponds to an example of the pressurization heating program of the present invention. It can be seen that the circuit component module of the present embodiment is processed and processed. By shrinking the central portion of the internal passage in the Z direction and allowing the electronic component to receive the internal passage scale, the electronic component can be easily embedded in the internal passage. By performing the second heat treatment process shown in Fig. 7(f), The internal passage can be further shrunk, and the compression ratio of the conductive resin composition filled on the upper and lower sides of the electronic component can be improved, so that the conductivity can be improved. Moreover, it is expected to be a singular (4) secret anger, and heat treatment is performed to reduce the central portion, so the internal passage The friction between the wall surface and the inserted part becomes a procedure for peeling off the cover film, which reduces the possibility of parts falling out of the internal passage. Further, after inserting the electronic part into the internal passage, the internal passage is narrowed. The central part 'closes the inserted electronic parts to the wall of the internal passages, thus reducing the conductive penetration of electronic parts and (10) passages filled with screen printing In the gap between the two, the internal passage in this embodiment is very suitable as a constructor for incorporating electronic components. [Embodiment] Hereinafter, a specific embodiment of the present invention will be described. (Example 1) Example 1 is an example of a built-in circuit component module manufactured by the method described in Embodiment 1. In this embodiment, the liquid epoxy resin is made of Japan Epoxy Resin. Epoxy resin (epik〇te828). Solid resin is made of epoxy resin (1〇〇1) made by Japan Epoxy Resin Co., Ltd. Latent curing agent is a latent curing agent (2200) made by ThreeBond. The rubber component was an acrylic modified resin (HTR-860P-3) manufactured by Imperial Chemical Industries Co., Ltd. Further, the inorganic filler is used in an amount of 85% by weight based on Al2〇3 (associated with AS-20 and AS-40 by the Showa Electric Co., Ltd.), and the liquid epoxy resin accounts for 2% by weight/〇, solid ring. The oxygen resin accounts for 6 weight. /. The rubber component accounts for 6 weights. /. A mixture of a curing agent in an amount of 0.3% by weight, a coupling agent (manufactured by Ajinomoto (manufactured by Tosoh Corp.), and a titanate type, 46B) in a ratio of 0.7% by weight. Next, a method of manufacturing the plate member 210 shown in Fig. 2(a) will be described. First, the paste mixture mixed in the solvent is dropped on the release film in a specific amount. This paste mixture was prepared by mixing an inorganic filler with a resin or the like in a ball mill for about 60 minutes. The release film was a polyethylene terephthalate film having a thickness of 75 μm, and was subjected to release treatment with a crucible on the surface of the film. Next, a paste mixture was applied to the release film and a thickness of 26 8 201140716 20 〇 μΐ was obtained by a doctor blade to obtain a plate-like mixture. Then, the plate-like mixture formed on the release film is heated together with the release film, and heat-treated under the condition that the adhesion of the plate-like mixture disappears. The heat treatment was maintained at 8 Torr for 30 minutes. By this heat treatment, the plate-like mixture loses its adhesiveness', so that it is easy to peel off the release film. Then, the release film was peeled off from the plate-like mixture, and after overlapping four plate-like mixtures, it was sandwiched by a cover film (PPS: polyphenylene sulfide, thickness 16 μm), and pressurized at a pressure of lkg/cm 2 while being 8 The temperature of 〇t is heated to form a plate-like member 21〇 which is formed by laminating a slab-like mixture and having a cover film 2〇1 attached thereto (see Fig. 2(a)). / Thereby, an electrically insulating substrate material 202 having a thickness of about 800 μm and having a cover film 201 formed on both sides thereof can be prepared. Further, a through hole (diameter: 0.25 mm) for connecting the internal via holes is formed on the electrically insulating substrate material 202 and the cover film 201 by a punching machine (see Fig. 2(b)). Then, the conductive resin composition 11 Γ is filled in the through-hole by a screen printing method (see FIG. 2(c)). The conductive resin composition ur is 85% by weight of spherical copper particles, and double The phenol A type epoxy resin (Japan Ep〇Xy ruler is made of Epoxy, Epik〇te 828) accounts for 3 weights. /. 'Glycidyl ester epoxy resin (manufactured by Tosho Kasei Co., Ltd., YD-171) 9% by weight, and an amine adduct curing agent (manufactured by Ajinomoto, MY-24) in a ratio of 3% by weight. Next, the electrically insulating substrate material 202 filled with the conductive resin composition 11 was heated at 120 ° C for 5 minutes. By this procedure, the central portion 103a of the internal passage 103 is formed to have a reduced diameter of the hole and a shape in which the filled conductive resin composition 11b protrudes (see Fig. 2(d)). At this time, the diameter of the hole of the central portion 1〇3& 27 201140716 is formed to be contracted by about 15 to 2 inches from the opening portion 103b. /. State. Next, the cover film 201 is peeled off from the electrically insulating substrate material 2〇2 (see FIG. 2(e)), and the second substrate 101 and the second substrate 108 on which the substrate electrode 1〇2 is formed are formed at desired positions. The laminate of the electrically insulating substrate material 202 having the internal via 1 (see Fig. 2(f)) is placed at a hot pressing temperature of 180 by a hot press. (:, under the condition of a pressure of 20 kg/cm2, pressurization heating for 60 minutes. By the heating, the epoxy resin in the electrically insulating substrate material 2〇2 and the epoxy resin in the conductive resin composition 11 are cured. The semiconductor element (see the semiconductor wafer 1〇5 of the drawing) in the electrically insulating substrate material 202, and the substrate electrode 102 and the electrically insulating substrate material 202 are stably mechanically connected. Further, by the heating, The conductive resin composition 11A can be electrically connected to the substrate electrode 102 (internal via connection) and mechanically connected to form the built-in circuit component module 270 shown in Fig. 8. The built-in circuit component module 270 In the meantime, 500 internal passages 1〇3 filled with the conductive resin composition 111 are connected in series, and 100 samples obtained by connecting 500 internal passages 1〇3 as described above are prepared. The reliability of the built-in circuit component module made by the example is therefore the reflow test and the temperature cycle test. The reflow test is performed by using a belt reflow tester at a maximum temperature of 260 ° C for 10 seconds. , repeat 10 times Further, the temperature cycle test was carried out by maintaining the temperature of -60 ° C for 30 minutes after holding at 125 ° C for 30 minutes, and repeating 1000 cycles. (Comparative Example I) 28 8 201140716 Comparative Example 1 The electrically insulating substrate of the circuit component module is made of Al2〇3 (the same amount of AS-20 and AS-40 made by Showa Denko), 85% by weight, 45% by weight of liquid epoxy resin, and solid. Epoxy resin 1 〇 〇 〇 〇 〇 固化 〇 〇 〇 〇 〇 固化 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 A mixture of the proportions of the composition was prepared as an inorganic filler. That is, the mixture used in the comparative example was different from the mixture of the electrically insulating substrate formed in the above Example 1, except that the rubber component was not contained. In the manufacturing procedure section, the heating procedure for highlighting the filled conductive resin composition as shown in Fig. 2(d) was not performed, and the rest of the procedure was carried out in the same manner as in Example 1. After the reflow test and the temperature cycle test As a result, in any of the tests, the present embodiment 1 is hidden The part of the circuit module is connected to the internal resistance of the conductive resin composition (excluding the wiring part, only the electrical value of the internal path connection), and the rate of change is within 10% before and after the test. As a result of the cross section of the passage portion, no crack was generated, and no special abnormality was found even in the ultrasonic flaw detection device. In contrast, in Comparative Example 1, the resistance value of the internal passage connection was changed to 4%. More than 10% 'and the cross-section observation, the resistance value of the material is more than 10% of the sample 'some can be observed that cracks have been produced. °
例1中導電性樹脂組成物與電絕緣性基板之絕缘材P 熱膨脹差造成裂隙產生，而本實施例1可4 ；： 之 、、持内部通路 之壁面與導電性樹脂組成物之黏附強度抑制穿隙產生 (比較例2) 29 201140716 又，比較例2相較於實施例1，並不進行用以使内部通 路中央部之孔穴直徑收縮之加熱程序，除此之外，則以與 實施例1相同之材料、製造方法製成樣本，並對樣本施以上 述之迴焊測試及溫度循環測試。 另，比較例2所製作之樣本，係内部通路之中央部對開 口部之收縮率為0%。 (實施例2) 又，實施例2相較於實施例丨，係於使内部通路之中央 部直徑收縮之程序中，以8(rc加熱3分鐘，此外則以與實施 例1相同之條件、製造方法製成樣本，並對樣本施以上述之 迴焊測試及溫度循環測試。 另，貫施例2所製作之樣本，係内部通路之中央部對開 口部之收縮率約為3〜5%。 經迴焊測試及溫度循環測試之結果，比較例2中，内部 通路連接之電阻值變化超過1〇%之樣本約有5〇/〇。 此外，上述實施例2中，内部通路連接之電阻值變化超 過10%之樣本約有2%。 承上，由（實施例1)與（比較例2)可知，藉由進行用以使 内部通路收縮之加熱處理，可製得可靠度高且品質優良之 内藏電路零件模組。 進而，由（實施例1)與（比較例丨）可知，藉由在用以形成 電絕緣性基板之混合物中添加橡膠成分，並進行用以使内 部通路收縮之加熱處理，可製得可靠度更高且品質更優良 之内藏電路零件模組。 ⑧ 30 201140716 又’由（實施例2)可知，加熱處理下之熱收縮率雖較(實 把例D小’但相較於（比較例1)及（比較例2)，内藏電路零件 模組之可靠度及品質均增加。 (實施例3) 實施例3係按實施型態2所說明之方法製成内藏電路零 件模组之一例。 該實施例係以與實施例1相同之材料製成内藏電路零 件換組。準備一厚度約800μπι且兩面形成有覆蓋膜之電絕 緣性基板素材’利用衝孔機形成用以進行内部通路連接之 貫通孔(直徑〇.25mm)(參照第7(b)圖）。 其次’於所需之内部通路1〇3插入〇6〇3尺寸之之晶片零 件1〇7(例如電阻)(參照第7(幻圖）。本實施例中係插入⑽電 阻。 其次，進行用以使内部通路103收縮之加熱程序（8〇。〇 10分鐘)(參照第7(d)圖）。此時，必須注意若收縮太劇則於再 次加熱程序時將無法收縮。 其次，藉由網版印刷法於貫通孔填充導電性樹脂組成 物11厂（參照第7(e)圖）。此時，利用印刷機由一面進行網版 印刷填充導電性樹脂組成物後，反轉再由一面填充導電性 樹脂組成物。藉此，可於插入之晶片零件1〇7與基板電極1〇2 間配置導電性樹脂組成物11Γ。 其次，對填充有導電性樹脂組成物U1'之電絕緣性基 板素材202以120t加熱5分鐘。藉此程序，形成内部通路1〇3 之該中央部103a孔穴直徑收縮’且填充之導電性樹脂組成 31 201140716 物突出之形狀（參照第7⑴圖）。該加熱程序係以高於前—次 加熱程序之溫度進行，藉以釋放剩餘之殘留應力，使内部 通路103收縮。 ° 其次，由電絕緣性基板素材202剝離覆蓋膜2〇1(參照第 7(g)圖），並將形成有基板電極1〇2之第丨基板1〇1及第2基板 1〇8、與形成有内部通路1〇3之電絕緣性基板素材2〇2積層於 所舄之位置，再利用熱壓機對其以180°C之熱壓溫度、 2〇kg/cm2之壓力進行加壓加熱6〇分鐘。 藉由該加熱，電絕緣性基板素材202中之環氧樹脂及導 電性樹脂組成物11Γ中之環氧樹脂產生固化，使電絕緣性 基板素材202中之半導體元件、基板電極1〇2之銅箔與電絕 緣性基板錄202形成制之機械性連接。且，藉由該加 熱，使導電性樹脂組成物ιη與基板電極1〇2、配置於内部 通路l〇3t晶片零件1()7之電極與基板電極1〇2形成電性（内 部通路連接)及機械性連接。 進而，藉由於製成之内藏電路零件模組之外層面安裝 零件時所施加之熱，使插入内部通路103中之晶片零件1〇7 之電極lG7a熔融，並與導電性樹脂組成物liK中之金屬填 充劑進行金屬鍵結，可形成強而穩固之連接構造。 、 (比較例3) 又，比較例3抽較於實施例3，係於貫通孔插入電子零 件（晶片零件107)後，刪除使内部通路1〇3收縮之加熱程序 (第7⑷圖）’除此之外則採用與實施例3相同之條件製造 方法製作。 ⑧ 32 201140716 (比較例4) 又’比較例4相較於實施例3，係於以網版印刷法於貫 通孔填充導電性樹脂組成物Ilf後，刪除使内部通路1〇3收 縮之加熱程序（第7(f)圖），除此之外則採用與實施例3相同之 條件、製造方法製作。 如同實施例1，對該等實施例3、比較例3、比較例4所 製成之樣本進行迴焊測試及溫度循環。 實施例3中’内部通路連接、及内藏零件之通路之電阻 值，於測試開始前後之變化率在10%以内，測試後觀察内 部通路部分之載面，結果並未產生裂隙，以超音波探傷裝 置亦查無特別異常。 比較例3中，於插入零件後之填充導電性樹脂組成物程 序時’產生零件脫落之情形。或零件雖未脫落但由一側進 行填充程序時零件偏向相反面側，導致反轉後再由一側填 充導電性樹脂組成物時，無法填充導電性樹脂組成物，並 產生電性連接不良之樣本。 、 比較例4中，經迴焊測試及溫度循環測試結果，内部通 路連接之電阻值變化超過10°/。之樣本，約有5%。此外，業 已插入零件之内部通路之内部通路連接電阻值變化超 之樣本，約有3%。 。 產業上之可利用性 本發明之内藏電路零件模組及内藏電路零件模組之製 造方法’係具有散熱性及電性連接可靠錢備之效果，並 為有用之内藏電路零件模組等。 33 201140716 c圖式簡單説明3 第1圖係本發明實施型態1之内藏電路零件模組之截面 構成圖。 第2(a)〜（g)圖係用以說明本發明實施型態1之内藏電 路零件模組之製造方法各程序之截面構成圖。 第3圖係本發明實施型態1之變形例之内藏電路零件模 組之截面構成圖。 第4圖係本發明實施型態1之變形例之内藏電路零件模 組之截面構成圖。 第5圖係本發明實施型態2之内藏電路零件模組之截面 構成圖。 第6圖係顯示本發明實施型態2之内藏電路零件模組之 部分擴大截面之電子顯微鏡照片。 第7(a)〜（h)圖係用以說明本發明實施型態2之内藏電 路零件模組之製造方法各程序之截面構成圖。 第8圖係用以說明實施例1之樣本構造之截面構成圖° 第9圖所示者係習知之内藏電路零件模組之構造。 【主要元件符號說明】 100、250、260、270、300 103b··.開口部 104.. .電絕緣性基板 105.. .半導體晶片 106、107···晶片零件 107a...電極 108.. .第2基板 …内藏電路零件模組 101…第1基板 102…基板電極 103···内部通路 103a_.·中央部 201140716 109··.封裝樹脂 213a、213b...表面 110'261、262...内藏零件層 220、221 …面 1Η、11Γ...導電性樹脂組成物 400…内藏電路零件模組 201·..覆蓋膜 401...基板 202…電絕緣性基板素材 401a' 401b、401c...絕緣性基板 205...鼓出部分 402a、402b、402c、402d 210、21 卜 212、213、214、312、 ...佈線圖案 313、314、315、316 403a、403b...電路零件 ...板狀構件 404·.·内部通路 35In the first embodiment, the difference in thermal expansion between the conductive resin composition and the insulating material P of the electrically insulating substrate causes cracks to occur, and in the first embodiment, the adhesion strength between the wall surface of the internal passage and the conductive resin composition is suppressed. The gap is produced (Comparative Example 2). 29 201140716 Further, in Comparative Example 2, the heating procedure for shrinking the diameter of the hole in the central portion of the internal passage is not performed as compared with the first embodiment, and the example is the same as the embodiment. 1 The same material and manufacturing method are used to make a sample, and the sample is subjected to the above-mentioned reflow test and temperature cycle test. Further, in the sample prepared in Comparative Example 2, the shrinkage ratio of the central portion of the internal passage to the opening portion was 0%. (Example 2) Further, in the second embodiment, in the procedure of shrinking the diameter of the central portion of the internal passage, the second embodiment was heated at 8 (rc for 3 minutes, and in the same manner as in the first embodiment, The manufacturing method is made into a sample, and the sample is subjected to the above-mentioned reflow test and temperature cycle test. In addition, the sample prepared in the second embodiment is the central portion of the internal passage and the shrinkage rate of the opening portion is about 3 to 5%. According to the results of the reflow test and the temperature cycle test, in the comparative example 2, the sample in which the resistance value of the internal via connection changes by more than 1% was about 5 〇 / 〇. Further, in the above embodiment 2, the resistance of the internal via connection The sample having a value change of more than 10% is about 2%. From (Example 1) and (Comparative Example 2), it is understood that the heat treatment for shrinking the internal passage can be performed to obtain high reliability and quality. Further, it is known that the circuit component module is built in. Further, (Example 1) and (Comparative Example), it is understood that a rubber component is added to a mixture for forming an electrically insulating substrate, and the internal passage is shrunk. Heat treatment for reliability 8 30 201140716 Further, it can be seen from (Example 2) that the heat shrinkage rate under heat treatment is smaller than that of the case (Comparative Example 1) And (Comparative Example 2), the reliability and quality of the built-in circuit component module are increased. (Embodiment 3) Embodiment 3 is an example of a built-in circuit component module manufactured by the method described in Embodiment 2. In this embodiment, the built-in circuit component is replaced by the same material as in Embodiment 1. An electrically insulating substrate material having a thickness of about 800 μm and having a cover film formed on both sides is prepared by using a punch for internal passage. Connect the through hole (diameter 〇.25mm) (refer to Figure 7(b)). Next, insert the 零件6〇3 size of the wafer part 1〇7 (for example, resistor) in the required internal path 1〇3 (refer to 7 (phantom). In this embodiment, a resistor is inserted (10). Next, a heating program for contracting the internal passage 103 is performed (8 〇. 〇 10 minutes) (refer to Fig. 7(d)). It must be noted that if the contraction is too long, it will not shrink when the program is reheated. Second, by the net The printing method fills the conductive resin composition 11 in the through-hole (see Fig. 7(e)). At this time, the conductive resin composition is filled with one side by screen printing, and then inverted and filled by one side. The conductive resin composition is disposed so that the conductive resin composition 11Γ can be disposed between the inserted wafer component 1〇7 and the substrate electrode 1〇2. Next, the electrically insulating substrate filled with the conductive resin composition U1' The material 202 is heated at 120 t for 5 minutes. By this procedure, the central portion 103a of the internal passage 1〇3 is formed to have a reduced hole diameter and the filled conductive resin composition 31 201140716 has a protruding shape (refer to Fig. 7(1)). The temperature is higher than the temperature of the pre-heating procedure to release the remaining residual stress, causing the internal passage 103 to contract. Then, the cover film 2〇1 is peeled off from the electrically insulating substrate material 202 (see FIG. 7(g)), and the second substrate 1〇1 and the second substrate 1〇8 on which the substrate electrode 1〇2 is formed are removed, The electrically insulating substrate material 2〇2 formed with the internal passages 1〇3 is laminated at a position where it is placed, and then pressurized by a hot press at a hot pressing temperature of 180° C. and a pressure of 2 〇kg/cm 2 . Heat for 6 minutes. By this heating, the epoxy resin in the electrically insulating substrate material 202 and the epoxy resin in the conductive resin composition 11 are cured, and the semiconductor element in the electrically insulating substrate material 202 and the copper of the substrate electrode 1〇2 are formed. The foil is mechanically coupled to the electrically insulating substrate record 202. By this heating, the conductive resin composition ι and the substrate electrode 1 〇 2 are disposed in the internal path 10 t 3t The electrode of the wafer component 1 ( ) 7 is electrically connected to the substrate electrode 1 〇 2 (internal via connection) And mechanical connection. Further, the electrode 1G7a of the wafer part 1〇7 inserted into the internal via 103 is melted by the heat applied when the component is mounted on the layer other than the built-in circuit component module, and is combined with the conductive resin composition liK The metal filler is metal bonded to form a strong and stable connection structure. (Comparative Example 3) Further, in Comparative Example 3, the electronic component (wafer component 107) was inserted into the through hole, and the heating procedure (Fig. 7(4)) of the internal passage 1〇3 was removed. Otherwise, it was produced by the same manufacturing method as in Example 3. 8 32 201140716 (Comparative Example 4) Further, in Comparative Example 4, after the conductive resin composition Ilf was filled in the through-hole by the screen printing method, the heating procedure for shrinking the internal passage 1〇3 was deleted. (Fig. 7(f)), except that the same conditions and manufacturing methods as in Example 3 were employed. As in Example 1, the samples prepared in the above Example 3, Comparative Example 3, and Comparative Example 4 were subjected to a reflow test and a temperature cycle. In Example 3, the resistance values of the internal passage connection and the passage of the built-in parts were within 10% before and after the test. After the test, the surface of the internal passage portion was observed, and as a result, no crack was generated to supersonicize. The flaw detection device was also found to be no abnormality. In Comparative Example 3, when the conductive resin composition was filled after the component was inserted, the part was peeled off. Or the part does not fall off, but when the filling process is performed by one side, the part is biased to the opposite side, and when the conductive resin composition is filled by one side after the reverse rotation, the conductive resin composition cannot be filled, and electrical connection failure occurs. sample. In Comparative Example 4, the resistance value of the internal wiring connection changed by more than 10 °/ after the reflow test and the temperature cycle test result. The sample is about 5%. In addition, the internal path connection resistance value of the internal path of the inserted component has changed by more than 3%. . INDUSTRIAL APPLICABILITY The built-in circuit component module and the built-in circuit component module manufacturing method of the present invention have the effects of heat dissipation and electrical connection reliability, and are useful internal circuit component modules. Wait. 33 201140716 c Brief description of the drawing 3 Fig. 1 is a cross-sectional structural view of the built-in circuit component module of the embodiment 1 of the present invention. The second (a) to (g) drawings are sectional views for explaining the respective procedures of the method of manufacturing the built-in circuit component module according to the first embodiment of the present invention. Fig. 3 is a cross-sectional structural view showing a built-in circuit component module of a modification of the first embodiment of the present invention. Fig. 4 is a cross-sectional structural view showing a built-in circuit component module of a modification of the first embodiment of the present invention. Fig. 5 is a cross-sectional structural view showing a built-in circuit component module of the embodiment 2 of the present invention. Fig. 6 is an electron micrograph showing a partially enlarged cross section of the built-in circuit component module of the embodiment 2 of the present invention. The seventh (a) to (h) drawings are sectional views for explaining the respective procedures of the method of manufacturing the built-in circuit component module according to the second embodiment of the present invention. Fig. 8 is a view showing a configuration of a cross-sectional structure of the sample structure of the first embodiment. Fig. 9 is a view showing a structure of a conventional built-in circuit component module. [Description of main component symbols] 100, 250, 260, 270, 300 103b··. Openings 104.. Electrically insulating substrate 105.. Semiconductor wafers 106, 107··· Wafer parts 107a... Electrodes 108. . . second substrate... built-in circuit component module 101... first substrate 102: substrate electrode 103: internal passage 103a_.·central portion 201140716 109·. encapsulation resin 213a, 213b... surface 110'261, 262... built-in parts layer 220, 221 ... surface 1 Η, 11 Γ ... conductive resin composition 400 ... built-in circuit component module 201 ·.. cover film 401 ... substrate 202 ... electrically insulating substrate material 401a' 401b, 401c... insulating substrate 205... bulging portions 402a, 402b, 402c, 402d 210, 21 212, 213, 214, 312, ... wiring patterns 313, 314, 315, 316 403a , 403b...circuit parts...plate member 404···internal passage 35